Biological photoelectric memristor based on cadmium selenide quantum dots and preparation method thereof

Abstract

The invention discloses a biological photoelectric memristor based on cadmium selenide quantum dots and a preparation method thereof, and the biological photoelectric memristor comprises a transparent substrate, an ITO electrode layer, a cadmium selenide quantum dot layer as a third resistive layer, a starch and gold nanoparticle layer as a second resistive layer, a cadmium selenide quantum dot layer as a first resistive layer, and an aluminum electrode layer. The system has a photoelectric dual-modulation characteristic, not only has a data storage characteristic, but also has a visual perception characteristic, and provides a basis for realizing a sensing, storage and calculation integrated artificial vision system.

Description

Technical Field

[0001] The present invention relates to the field of visual perception in data storage, and particularly to a bio-optoelectronic memristor based on cadmium selenide quantum dots and a preparation method thereof. Background Art

[0002] The sensory nervous system is the basis of the biological system, controlling human sensory organs such as eyes, nose, ears, etc., perceiving external information through nerve endings and converting it into biological signals for storage and processing. Human visual perception mainly identifies the optical signals emitted by objects through the eyes, providing information such as distance, color, shape, etc. An artificial sensory nervous system can combine a sensor for information perception with a memristor to achieve various perception functions. The most important function of the visual perception system is to identify, store, and calculate various lights. Therefore, it is important to study photosensitive type devices with high integration and high sensitivity.

[0003] In the human visual perception system, the eyes collect information about external objects, send nerve signals to the brain for signal recognition and processing after simple preprocessing through the retina, and then classify and store the processed image information according to human's autonomous consciousness according to the importance of the information, such as long-term memory or short-term memory, etc. The current visual perception system usually uses an optical sensor as the artificial retina in the eyes, an analog-to-digital conversion circuit as the path for connection and calculation, and then processes it through some neural network algorithms to finally achieve the processing of the information transmitted by the object. However, due to the separation of perception and calculation, a large amount of time and power consumption are required for the processing of each part, resulting in a large amount of resource waste. Therefore, this has always been a bottleneck that urgently needs to be broken through in this field. With the efforts of researchers at home and abroad, various related researches have made good progress, but there are still some problems that have not been overcome. One is the mutual separation between the visual perception device and the data calculation device, resulting in a large amount of resource waste; the second is the low sensitivity of the light response current of the device, and it is necessary to improve the system's perception of the sensitivity of the response current through the peripheral circuit; the third is that the stability of the device is poor under light stimulation.

[0004] Therefore, we provide a bio-optoelectronic memristor with good durability and stability and a preparation method thereof to achieve the integration of visual perception, data storage, and calculation. Summary of the Invention

[0005] In order to solve the problems existing in the above background art, the present invention provides a preparation method of a bio-optoelectronic memristor. The bio-optoelectronic memristor uses a top electrode / cadmium selenide quantum dots / starch and gold nanoparticles / cadmium selenide quantum dots / bottom electrode to form a data storage and visual perception unit. The constructed optoelectronic memristor has good cyclic stability and optoelectronic double modulation effect, and the implementation method is simple in operation and low in cost, thus completing the present invention.

[0006] To achieve the above object, the present invention provides the following technical solutions:

[0007] In a first aspect of the present invention, a bio-photoelectric memristor is provided, wherein the structure of the bio-photoelectric memristor comprises a transparent substrate 1, a bottom electrode 2, a first dielectric layer 4, a second dielectric layer 5, a third dielectric layer 6 and a top electrode 3 arranged in sequence from bottom to top.

[0008] A second aspect of the present invention provides a method for preparing a biophotoelectric memristor, the method comprising the following steps:

[0009] Step 1, cleaning the transparent substrate and the bottom electrode;

[0010] Step 2, preparing a third resistive switching layer on the upper surface of the bottom electrode;

[0011] Step 3, preparing a second resistive switching layer on the upper surface of the third resistive switching layer;

[0012] Step 4, preparing a first resistive switching layer on the upper surface of the second resistive switching layer;

[0013] Step 5: vapor-deposit a top electrode on the upper surface of the first resistive layer.

[0014] Compared with the prior art, the present invention has the following beneficial effects:

[0015] (1) The biophotoelectric memristor provided by the present invention uses cadmium selenide quantum dots, starch and gold nanoparticles, and cadmium selenide quantum dots to form a resistive switching layer, and forms a data storage and visual perception unit with the top electrode and the bottom electrode, showing bipolar characteristics and effectively simulating neural synaptic behavior;

[0016] (2) The biophotoelectric memristor prepared by the preparation method provided by the present invention has good performance and good cycle stability;

[0017] (3) The memristor prepared by the preparation method provided by the present invention exhibits different photosensitivity characteristics, and while realizing data storage, it also has visual perception characteristics. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 The structure diagram of the biophotoelectric memristor of the present invention is shown, wherein the black lines above and below the electrodes are wires;

[0019] Figure 2 A schematic diagram of a top view of a biophotoelectric memristor according to a preferred embodiment of the present invention is shown;

[0020] Figure 3 A flow chart showing the steps of a method for preparing a biophotoelectric memristor according to a preferred embodiment of the present invention;

[0021] Figures 4-1 to 4-6Schematic diagrams of the fabrication processes at different stages of a bio-optoelectronic memristor according to a preferred embodiment of the present invention;

[0022] Figure 5 Shows the current-voltage variation curve of the bio-optoelectronic memristor prepared in Example 1 of the present invention when cycling once between different storage states;

[0023] Figure 6 Shows the variation of the current on-off ratio of the bio-optoelectronic memristor prepared in Example 1 of the present invention with voltage;

[0024] Figure 7 Shows the retention time diagram of different data storage states of the memristor of the bio-optoelectronic memristor prepared in Example 1 of the present invention;

[0025] Figure 8 Shows the current-voltage variation curve of the bio-optoelectronic memristor prepared in Example 1 of the present invention when cycling once under illumination of different wavelengths;

[0026] Figure 9 Shows the response and recovery time variation curve of the bio-optoelectronic memristor prepared in Example 1 of the present invention under illumination at 395 nm;

[0027] Figure 10 Shows the response and recovery time variation curve of the bio-optoelectronic memristor prepared in Example 1 of the present invention under illumination at 405 nm;

[0028] Explanation of the reference numerals in the drawings:

[0029] 1 - transparent substrate;

[0030] 2 - bottom electrode;

[0031] 3 - top electrode;

[0032] 4 - first resistive switching layer;

[0033] 5 - second resistive switching layer;

[0034] 6 - third resistive switching layer. Detailed implementation manners

[0035] The technical solutions of the present invention will be described clearly and completely below. Through these descriptions, the features and advantages of the present invention will become more clear and definite. Unless otherwise specified, the reagents, equipment, and methods used in the present invention are all conventional reagents, equipment, and methods in the technical field. However, the present invention is not limited in any form.

[0036] In a first aspect of the present invention, a bio-optoelectronic memristor is provided. The resistive random access memory includes a transparent substrate 1 and a data storage and visual perception unit disposed thereon. The data storage and visual perception unit includes a bottom electrode 2, a first resistive switching layer 4, a second resistive switching layer 5, a third resistive switching layer 6, and a top electrode 3 disposed from bottom to top.

[0037] In the present invention, the material constituting the transparent substrate 1 is not limited. Preferably, it can be composed of one or more of conductive glass, PEN, or PET materials.

[0038] Furthermore, the transparent substrate 1 is conductive glass.

[0039] Further, the bottom electrode 2 is made of ITO, ZnO material, or a metal electrode, and preferably has a thickness of 10 - 200 nm; more preferably, the bottom electrode layer 2 is made of ITO with a thickness of 200 nm.

[0040] Further, the top electrode layer is an Al electrode, and the thickness of the top electrode layer is 100 - 200 nm.

[0041] Preferably, in the above solution, the Al electrode layer includes dot electrodes uniformly distributed on the first dielectric layer in the form of dots with a diameter of 200 - 500 μm, as Figure 2 shown.

[0042] Further, the storage layer includes a first resistive switching layer 4, a second resistive switching layer 5, and a third resistive switching layer 6 disposed in sequence from top to bottom. Among them, the third resistive switching layer 6 is disposed on the upper surface of the bottom electrode 2, as Figure 1 shown.

[0043] In a further preferred embodiment, the top electrode 3 is disposed on the upper surface of the first resistive switching layer 4.

[0044] According to a preferred embodiment of the present invention, the materials of the first resistive switching layer 4 and the third resistive switching layer 6 may be the same or different. More preferably, the materials of the first resistive switching layer 4 and the third resistive switching layer 6 are the same.

[0045] Further, the transparent substrate (1), bottom electrode (2), top electrode (3), first resistive switching layer (4), second resistive switching layer (5), and third resistive switching layer (6) form a bio-optoelectronic memristor.

[0046] In a further preferred embodiment, the materials of the first resistive switching layer 4 and the third resistive switching layer 6 are one or more of oxides, polymer organic compounds, and quantum dots;

[0047] The inventor of the present invention has found through research that cadmium selenide quantum dots are a promising resistive switching material, with advantages such as a wide response range, stability, and high optoelectronic conversion efficiency. Therefore, in this embodiment, the materials of the first resistive switching layer 4 and the third resistive switching layer 6 are cadmium selenide quantum dots. There are no particular restrictions on cadmium selenide quantum dots, and existing cadmium selenide quantum dots can be used, such as those produced by Suzhou Xingshuo Nano Technology.

[0048] In the present invention, cadmium selenide quantum dots are used, which will act as charge trapping centers to trap electrons injected by an applied voltage, reduce the influence on proton movement, and promote the formation of conductive filaments.

[0049] The material of the second resistive switching layer 5 is selected from one, multiple, or composite materials of graphene oxide, gold nanoparticles, starch, tantalum pentoxide, and zinc oxide;

[0050] Preferably, the forming material of the second resistive switching layer 5 is a composite material of gold nanoparticles and starch.

[0051] In the present invention, gold nanoparticles and starch are selected as the materials of the second resistive switching layer, and aluminum is used as the inert electrode, which can reduce the influence of the electrode on the conductive mechanism of the device.

[0052] In the second aspect of the present invention, a preparation method for the bio-optoelectronic memristor described in the first aspect is provided, including the following steps:

[0053] Step 1, cleaning the transparent substrate and the bottom electrode;

[0054] Step 2, preparing the third resistive switching layer on the upper surface of the bottom electrode;

[0055] Step 3, preparing the second resistive switching layer on the upper surface of the third resistive switching layer;

[0056] Step 4, preparing the first resistive switching layer on the upper surface of the second resistive switching layer;

[0057] Step 5, evaporating and depositing the top electrode on the upper surface of the first resistive switching layer.

[0058] Specifically, the method includes the following steps, as Figure 3 shown:

[0059] Step 1, cleaning the transparent substrate and preparing the bottom electrode on its surface;

[0060] Step 2, preparing the solution required for the third resistive switching layer and coating it on the surface of the bottom electrode to form the third resistive switching layer;

[0061] Step 3, preparing the solution required for the second resistive switching layer and coating it on the surface of the third resistive switching layer to form the second resistive switching layer;

[0062] Step 4: Use the prepared third resistive switching layer solution and coat it on the surface of the second resistive switching layer to form the first resistive switching layer;

[0063] Step 5: Evaporate and deposit the top electrode uniformly on the upper surface of the first resistive switching layer.

[0064] The preparation method of the bio-optoelectronic memristor is further described as follows:

[0065] Step 1: Clean the transparent substrate and prepare the bottom electrode on its surface, as Figure 4-1 and Figure 4-2 shown.

[0066] According to a preferred embodiment of the present invention, use acetone, ethanol, and deionized water to clean the transparent substrate and the bottom electrode in sequence, and then dry them;

[0067] The optimal cleaning method is ultrasonic cleaning, and the cleaning time of ultrasonic cleaning is 10 - 20 min, and the more optimal cleaning time is 15 min;

[0068] Among them, after cleaning the transparent substrate and the bottom electrode, perform a drying treatment, and use insulating tape to partially mask the edge of the bottom electrode to facilitate the lead-out of the bottom electrode.

[0069] Step 2: Prepare the solution required for the third resistive switching layer and coat it on the surface of the bottom electrode to form the third resistive switching layer, as Figure 4-3 shown.

[0070] Among them, Step 2 includes the following sub-steps:

[0071] Step 2-1: Prepare the third resistive switching layer solution.

[0072] According to a preferred embodiment of the present invention, the third resistive switching layer is one or more selected from bio-materials, carbon-based materials, polymer materials, metal oxides, and quantum dots.

[0073] Furthermore, the material selected for the third resistive switching layer is cadmium selenide quantum dots.

[0074] In a further preferred embodiment, when the third resistive switching layer is cadmium selenide quantum dots, the concentration of its solution is 0.3 mg / mL - 2 mg / mL, preferably 0.8 mg / mL - 1.5 mg / mL, and the optimal concentration is 1 mg / mL.

[0075] According to the embodiment of the present invention, take 10 μL of cadmium selenide quantum dot solution with a concentration of 10 mg / mL in a clean vial, add 90 μL of deionized water, dilute the solution concentration to 1 mg / mL, and ultrasonicate for 2 h to prepare a 1 mg / mL cadmium selenide quantum dot solution.

[0076] Step 2-2: Spin-coat the third resistive switching layer solution on the upper surface of the bottom electrode, and then dry it to prepare the third resistive switching layer.

[0077] According to a preferred embodiment of the present invention, when the third resistive switching layer is cadmium selenide quantum dots, the rotation speed of the spin-coating is 500 - 4000 r / s, preferably 2000 - 4000 r / s, such as 3000 r / s; the spin-coating time is 30 - 80 s, preferably 35 - 55 s, such as 40 s.

[0078] Among them, using the above spin-coating conditions can ensure that the third resistive switching layer film is uniformly formed on the surface of the bottom electrode.

[0079] In a further preferred embodiment, the drying temperature is 105 °C; the drying time is 10 min.

[0080] Among them, using the above drying conditions is used to cure the film of the third resistive switching layer and uniformly form it on the bottom electrode.

[0081] Step 3: Prepare the second resistive switching layer on the upper surface of the third resistive switching layer, as Figure 4-4 shown.

[0082] According to a preferred embodiment of the present invention, the material of the second resistive switching layer 5 is selected from one or more of gold nanoparticles, starch, and zinc oxide;

[0083] Preferably, it is gold nanoparticles or a composite material of starch and gold nanoparticles, and more preferably a composite material of starch and gold nanoparticles;

[0084] More preferably, the forming material of the second resistive switching layer 5 is a composite material of gold nanoparticles and starch.

[0085] In a further preferred embodiment, the second resistive switching layer is prepared from a solution of gold nanoparticles and starch, preferably prepared according to a method including the following steps:

[0086] First, prepare a gold nano-solution. Weigh 0.05 g of solid powder of AuCl3·HCl·4H2O with an electronic balance and add it to a clean beaker, and then add 100 mL of deionized water to it;

[0087] Use a magnetic stirrer to heat and stir the solution to boiling at a rotation speed of 600 rpm;

[0088] Add 1 mL of a 1% wt aqueous solution of sodium citrate;

[0089] Continue to heat and boil for 20 min, and then naturally cool to room temperature to complete the preparation of the Au NPs solution;

[0090] Then, weigh 0.4 g of potato starch powder and add it to a small bottle with a volume of 10 mL. Extract 8 mL of glycerol and 2 mL of deionized water and add them to the small bottle respectively. Use a magnetic stirring instrument to stir at 1000 rmp for 1 h to obtain a starch solution;

[0091] Finally, mix the starch solution and the Au NPs solution in a ratio of 1:15 (volume ratio) and 1:10 (volume ratio). Ultrasonically treat the mixed solution for 15 min to obtain a composite solution.

[0092] Preferably, the composite solution with a solution ratio of 1:15;

[0093] According to a preferred embodiment of the present invention, when the second resistive switching layer is a composite material of starch and gold nanoparticles, the rotation speed of the spin coating is 2000 - 5000 r / s, preferably 3000 - 4000 r / s, such as 4000 r / s;

[0094] The time of the spin coating is 20 - 40 s, preferably 30 - 50 s, and the optimal spin coating time is 40 s.

[0095] Adopting the above spin coating conditions can ensure that the second resistive switching layer film is uniformly formed on the surface of the third resistive switching layer.

[0096] In a further preferred embodiment, the drying temperature is 105 °C; the drying time is 10 min.

[0097] Among them, the above drying conditions are used to cure the film of the second resistive switching layer.

[0098] Step 4, prepare the first resistive switching layer on the upper surface of the second resistive switching layer, as Figure 4-5 shown.

[0099] According to a preferred embodiment of the present invention, the materials used for the first resistive switching layer and the third resistive switching layer are the same, both being cadmium selenide quantum dots;

[0100] In a further preferred embodiment, when the first resistive switching layer is cadmium selenide quantum dots, the solution concentration is diluted to be the same as the concentration of cadmium selenide quantum dots used for the third resistive switching layer, which is 1 mg / mL.

[0101] Preferably, the cadmium selenide quantum dots are purchased from a manufacturer and diluted with deionized water, and then ultrasonically treated for 1 - 3 h, such as 2 h to obtain.

[0102] Take 10 μL of cadmium selenide quantum dot solution with a concentration of 10 mg / mL in a clean small bottle, and add 90 μL of deionized water to obtain a solution concentration of 1 mg / mL.

[0103] In the present invention, the first resistive switching layer is prepared on the upper surface of the second resistive switching layer by spin coating with a spin coater.

[0104] According to a preferred embodiment of the present invention, the rotation speed of the spin coating is 3000 r / s;

[0105] The spin coating time is 50 - 80 s, preferably 30 - 50 s, such as the optimal spin coating time of 40 s.

[0106] Among them, by using the above spin coating rotation speed and spin coating time, the first resistive switching layer solution can be uniformly attached to the surface of the second resistive switching layer.

[0107] In a further preferred embodiment, the curing temperature is 90 - 110 °C, preferably 95 - 105 °C, such as 100 °C;

[0108] The curing time is 5 - 20 min, preferably 10 - 15 min, such as 10 min.

[0109] Step 5, form a top electrode on the upper surface of the first resistive switching layer, as Figure 4-6 shown.

[0110] After ultrasonic cleaning the mask plate and drying it, fix the device to the mask plate. The optimal ultrasonic time is 15 min.

[0111] According to a preferred embodiment of the present invention, a top electrode is deposited on the first dielectric layer by vacuum evaporation, and the deposited top electrodes are arranged in the form of dot electrodes on it.

[0112] In a further preferred embodiment, the vacuum degree of the vacuum evaporation is set to 2.2×10 -3 Pa.

[0113] Furthermore, the bio - optoelectronic memristive device after vacuum evaporation is dried. The optimal drying temperature is 100 °C, and the optimal drying time is 10 min.

[0114] The preparation method of the optoelectronic memristor of the present invention is simple in operation, low in cost, easy to miniaturize and integrate resistive memory cells, and suitable for large - scale industrial applications.

[0115] According to the embodiments of the present invention, the optoelectronic memristor has good cycling stability, and at the same time the device has good light sensitivity, can realize optical sensing, data storage and calculation, and is a bio - optoelectronic memristor integrating sensing, storage and calculation.

[0116] Example

[0117] The present invention will be further described below through specific examples, but these examples are merely exemplary and do not impose any limitation on the protection scope of the present invention.

[0118] Example 1

[0119] Prepare a bio-optoelectronic memristor based on cadmium selenide quantum dots, starch, and gold nanoparticles according to the following steps:

[0120] (1) Immerse the ITO glass successively in acetone, ethanol, and deionized water, and perform ultrasonic vibration treatment for 15 min. Use insulating tape to shield part of the ITO electrode on the edge of the cleaned ITO to lead out the ITO electrode of the optoelectronic memristor, and obtain the cleaned bottom electrode.

[0121] (2) Take 10 μL of a cadmium selenide quantum dot solution with a concentration of 10 mg / mL in a clean vial, add 90 μL of deionized water, and then perform ultrasonic treatment to obtain a uniform cadmium selenide quantum dot solution with a concentration of 1 mg / mL; spin-coat the cadmium selenide quantum dot solution with a concentration of 1 mg / mL on the surface of the bottom electrode. The low speed of the spin coater is set at 500 r / s, the spin coating time is 5 s, the high speed is set at 3000 r / s, and the spin coating time is 40 s. Then put it into a drying oven and heat and cure it at 100 °C for 10 min to obtain the third resistive switching layer.

[0122] (3) Weigh 0.4 g of starch powder with an electronic precision balance and add it to a clean vial with a volume of 10 mL. Extract 8 mL of glycerol and 2 mL of deionized water and add them to the vial respectively. Use a magnetic stirring instrument to stir at a speed of 1000 r / s for 1 h to obtain a uniform starch solution (AM).

[0123] Weigh 0.05 g of solid powder of AuCl3·HCl·4H2O with an electronic balance and add it to a clean beaker, and then add 100 mL of deionized water to it; use a magnetic stirrer to heat and stir the solution to boiling at a speed of 600 rpm, and then add 1 mL of a 1% wt aqueous solution of sodium citrate. Continue to heat and boil for 20 min, and then naturally cool to room temperature to obtain a red Au NPs solution.

[0124] (4) Mix the AM solution and the Au NPs solution according to a volume ratio of 1:15, ultrasonically treat the mixed solution for 10 min to obtain a composite solution, spin-coat the AM:Au NPs composite solution on the upper surface of the third resistive switching layer. The low speed of the spin coater is set at 500 r / s, the spin coating duration is 5 s, the high speed is set at 4000 r / s, and the spin coating time is 40 s. Then put it into a drying oven and heat and cure it at 100 °C for 10 min to obtain the second resistive switching layer.

[0125] (5) Spin-coat a cadmium selenide quantum dot solution with a concentration of 1 mg / mL on the surface of the second resistive switching layer. The low-speed configuration for spin-coating is 500 r / s, the spin-coating time is 5 s, the high-speed configuration for spin-coating is 3000 r / s, and the spin-coating time is 40 s. Immediately after spin-coating is completed, place the device in an oven for heat curing. The set oven temperature is 100 °C and the drying time is 10 min to obtain the first resistive switching layer.

[0126] (6) Place the sample from step (5) into a vacuum evaporation machine. When the pressure in the vacuum chamber is pumped down to below 2×10 -3 Pa, perform Al evaporation. Immediately after evaporation is completed, anneal and dry the device at 105 °C for 10 min to obtain the top electrode, completing the fabrication of the bio-optical memristive device.

[0127] Experimental Example

[0128] Experimental Example 1

[0129] To evaluate the performance of the bio-optical memristor prepared in Example 1, the scanning voltage (Keithley 4200-SCA semiconductor parameter test system) of the bio-optical memristor prepared in Example 1 was measured to obtain the relevant current-voltage characteristic curves for analyzing the electrical and optical characteristics of the fabricated bio-optical memristor. During the test, connect the ground probe to the surface of the bottom electrode and connect the other probe to the Al top electrode.

[0130] Among them, a scanning voltage is applied to the device. The scanning voltage cycle sequence is 5 V → 0 V → -5 V → 0 V → +5 V. First, scan in the positive direction, then return to 0 V, then scan in the negative direction, then return to 0 V, and finally return to +5 V.

[0131] Figure 5 Shows the current-voltage cyclic sweep diagram of a single cycle between two different resistance states of the bio-optical memristor prepared in Example 1, demonstrating the data storage characteristics of the optoelectronic memristor based on cadmium selenide quantum dots, starch, and gold nanoparticles.

[0132] Figure 6 Shows the switching current ratio of the optoelectronic memristor prepared in Example 1 in the high-resistance state and the low-resistance state. From Figure 6 It can be seen that the optoelectronic memristor based on cadmium selenide quantum dots, starch, and gold nanoparticles has a large current switching ratio, indicating that the fabricated device has good data storage characteristics.

[0133] Figure 7 Shows the retention time of the optoelectronic memristor prepared in Example 1. From Figure 7It can be seen that at a reading voltage of 1 V, the resistance of the optoelectronic memristor did not change significantly within 10,000 s, indicating that the device has good retention characteristics and can be used for long-term data storage.

[0134] Figure 8 The I-V characteristic curves of the bio-optoelectronic memristor prepared in Example 1 under ultraviolet light illumination at wavelengths of 395 nm and 405 nm are shown. Figure 8 It can be seen that the on-off current ratio of the device decreases under illumination conditions, indicating that while the device has storage characteristics, it also has photosensitive characteristics, providing a method for realizing a visual perception system integrating sensing, storage, and computing.

[0135] Figure 9 The response and recovery time curves of the bio-optoelectronic memristor prepared in Example 1 under ultraviolet light illumination at a wavelength of 395 nm are shown. Figure 9 It can be seen that both the response time and the recovery time of the device are in the millisecond level under 395-nm illumination, showing good response and recovery characteristics.

[0136] Figure 10 The response and recovery time curves of the bio-optoelectronic memristor prepared in Example 1 under ultraviolet light illumination at a wavelength of 405 nm are shown. Figure 10 It can be seen that both the response time and the recovery time of the device are slightly greater under 405-nm illumination than under 395-nm illumination.

[0137] In the description of the present invention, it must be clear that the orientation or positional relationship indicated by terms such as "upper", "lower", "inner", "outer", "front", "rear", etc. is only based on the orientation or positional relationship in the working state of the present invention. They are only used to describe the present invention and simplify the description, and should not be construed as indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, these orientation or positional relationships should not be construed as a limitation to the present invention.

[0138] The above has described the present invention in combination with preferred embodiments. However, the above are only specific embodiments of the present disclosure, which only serve an illustrative purpose and are not used to limit the present disclosure. On this basis, within the spirit and principle of the present disclosure, various substitutions and improvements can be made to the present invention, and these all fall within the protection scope of the present invention.

Claims

1. A biological optoelectronic memristor based on cadmium selenide quantum dots, characterized in that: The bio-optoelectronic memristor includes a transparent substrate (1), a bottom electrode layer (2) above the substrate, a storage layer above the bottom electrode layer, and a top electrode layer (3) disposed matchingly above the storage layer; The storage layer includes a first resistive switching layer (4), a second resistive switching layer (5), and a third resistive switching layer (6) arranged in sequence from top to bottom, The first resistive switching layer (4) is made of one or more selected from biomaterials, carbon-based materials, polymer materials, metal oxides, and quantum dots, The second resistive switching layer (5) is made of one or more selected from biomaterials, nanomaterials, and metal oxides, The third resistive switching layer (6) is made of one or more selected from biomaterials, carbon-based materials, polymer materials, metal oxides, and quantum dots.

2. The bio-optoelectronic memristor according to claim 1, characterized in that: The first resistive switching layer (4) is made of cadmium selenide quantum dots.

3. The bio-optoelectronic memristor according to claim 1, wherein: The second resistive switching layer (5) is made of starch and gold nanoparticles.

4. The bio-optoelectronic memristor according to claim 1, wherein: The third resistive switching layer (6) is made of cadmium selenide quantum dots.

5. The bio-optoelectronic memristor according to claim 1, wherein: The bottom electrode layer is any one of an oxide electrode, a nitride electrode, an ITO electrode, an FTO electrode, and a metal electrode, and the thickness of the electrode layer is 100 - 200 nm.

6. The bio-optoelectronic memristor according to claim 1, wherein: The top electrode layer (3) is one of an aluminum, silver, tungsten, and platinum electrode, and the thickness of the top electrode layer is 50 - 150 nm.

7. The bio-optoelectronic memristor according to claim 6, characterized in that, The top electrode (3) is disposed on the upper surface of the first resistive switching layer (4) and arranged in the form of a dot electrode array.

8. The preparation method of the bio-optoelectronic memristor based on cadmium selenide quantum dots according to any one of claims 1 - 7, the method comprising the following steps: Step 1, cleaning the transparent substrate and the bottom electrode; Step 2, preparing the third resistive switching layer on the upper surface of the bottom electrode; Step 3, preparing the second resistive switching layer on the upper surface of the third resistive switching layer; Step 4, preparing the first resistive switching layer on the upper surface of the second resistive switching layer; Step 5, evaporating and depositing the top electrode on the upper surface of the first resistive switching layer.

9. According to the preparation method of the bio-optoelectronic memristor according to claim 8, characterized in that, In step 1, the third resistive switching layer is obtained by spin-coating a cadmium selenide quantum dot solution and drying; In step 3, the first resistive switching layer is obtained by spin-coating a cadmium selenide quantum dot solution and drying.

10. The preparation method of the bio-optoelectronic memristor according to claim 8, characterized in that, In step 2, the second resistive switching layer is obtained by spin-coating a starch-gold nanoparticle composite solution and drying, The starch-gold nanoparticle composite solution is prepared through the following process: (1) Preparing a gold nano solution: Dissolving solid powder of AuCl3·HCl·4H2O in water, heating the solution to boiling under a magnetic stirrer, adding an aqueous solution of sodium citrate, continuing to heat and boil, and naturally cooling to room temperature to obtain an Au NPs solution; (2) Preparing a starch solution: Dissolving starch in glycerol and water to obtain a starch solution; (3) Preparing a starch-gold nanoparticle composite solution: Mixing the gold nano solution and the starch solution, and ultrasonically mixing evenly to obtain a composite solution.

Images