Hole array filter, hole array device and method for manufacturing hole array filter

Abstract

This pore array filter (1) has, in a pore bottom (21), through-pores (23) that do not pass through an object including at least one of cells, particles, and droplets, and is provided with: a pore layer (10) having a plurality of pore openings (11) having a size that allows the object to pass through; and a support layer (20) that supports the hole layer (10), the support layer (20) being provided with a plurality of the hole bottoms (21) corresponding to the hole openings (11), and at least a portion between a plurality of the hole bottoms (21) adjacent to each other in the support layer (20) being divided.

Description

Technical Field

[0001] The present invention relates to a pore array filter, a pore array device, and a method for manufacturing a pore array filter.

[0002] The present invention claims priority based on Japanese Patent Application No. 2022-181804 filed in Japan on November 14, 2022, and incorporates its content herein. Background Art

[0003] For example, Patent Document 1 discloses a self-standing pore array filter using a laminated film in which a thin film and a support film are laminated. The thin film has a first pore portion including one or more pore portions penetrating the thin film in the thickness direction. The support film has a second pore portion including one or more pore portions penetrating the support film in the thickness direction. At least a part of the pore portions constituting the first pore portion communicates with at least a part of the pore portions constituting the second pore portion. All the opening portions of the respective pores constituting the first pore portion are included in the opening portions of the respective pores constituting the second pore portion. For example, a precursor film of the support film is formed by coating a negative photosensitive composition on the thin film. By exposing and developing the precursor film of the support film, a support film having pores with openings regularly arranged is formed on the thin film. The thin film constituting the laminated film is a continuous body.

[0004] Prior Art Documents

[0005] Patent Documents

[0006] Patent Document 1: Japanese Patent No. 6549869 Gazette Summary of the Invention

[0007] Problems to be Solved by the Invention

[0008] However, when the thin film (support layer) constituting the pore array filter is a continuous body and has a high opening ratio, compared with the case of a low opening ratio, only the exposed portion of the support layer increases, and the mechanical strength is likely to decrease. Therefore, there is a high possibility that the support layer is deformed due to the stress generated by the curing shrinkage of the support layer. Therefore, there is a demand for providing a self-standing pore array filter with a high opening ratio.

[0009] Therefore, an object of the present invention is to provide a self-standing pore array filter with a high opening ratio.

[0010] Means for Solving the Problems

[0011] (1) An orifice array filter according to an embodiment of the present invention is an orifice array filter having through-holes at the bottom of the orifices that are sized such that at least one of cells, particles, and droplets cannot pass through. The orifice array filter includes: an orifice layer having a plurality of orifice openings sized such that the object can pass through; and a support layer that supports the orifice layer. The support layer includes a plurality of the bottom portions of the orifices corresponding to the orifice openings, and at least a part between the plurality of bottom portions of the orifices adjacent to each other in the support layer is divided.

[0012] According to this configuration, stress applied to the support layer (for example, stress accompanying curing shrinkage of the support layer) can be absorbed between the divided bottom portions of the orifices, and thus deformation of the support layer can be suppressed. Therefore, a self-standing orifice array filter with a high opening ratio can be provided.

[0013] (2) In the orifice array filter described in (1) above, the support layer may be completely divided for each of the bottom portions of the orifices.

[0014] It should be noted that the support layer may be partially divided for each of the bottom portions of the orifices.

[0015] According to this configuration, the stress applied to the support layer can be absorbed as a whole between the divided bottom portions of the orifices, and thus deformation of the support layer can be more effectively suppressed.

[0016] (3) In the orifice array filter described in (1) above, the support layer may include a plurality of orifice bottom structures integrally connecting the plurality of bottom portions of the orifices, and the support layer is divided for each of the orifice bottom structures.

[0017] It should be noted that the support layer may also include a plurality of orifice bottom structures integrally connecting the plurality of bottom portions of the orifices. In addition, the support layer may be divided for each of the orifice bottom structures.

[0018] According to this configuration, the stress applied to the support layer can be locally absorbed between the divided bottom portions of the orifices. In addition, compared with the case where the support layer is completely divided for each bottom portion of the orifice, the mechanical strength is high. For example, when the orifice array fabricated on a substrate is made self-standing by peeling, defects such as a part of the divided plurality of bottom portions of the orifices falling off from the self-standing body can be prevented.

[0019] (4) In the orifice array filter described in any one of (1) to (3) above, the orifice array filter may be formed of a photocurable resin.

[0020] It should be noted that the orifice array filter may also be formed of a thermosetting resin.

[0021] According to this configuration, a pore array filter can be manufactured by lithography suitable for microfabrication (for example, processes of photoresist coating, exposure, and development).

[0022] (5) Alternatively, in the pore array filter described in any one of (1) to (4) above, the aperture ratio of the pore openings is 40% or more, the ratio A / B of the depth A of the pore layer to the minimum width B of the partition portion between adjacent pores in the pore layer is 2 or more, and the film thickness of the support layer is 5 μm or less.

[0023] It should be noted that the aperture ratio of the pore openings may also be 40% or more. In addition, the ratio A / B of the depth A of the pore layer to the minimum width B of the partition portion between adjacent pores in the pore layer may also be 2 or more. In addition, the film thickness of the support layer may also be 5 μm or less.

[0024] According to this configuration, it is easier to increase the density of the pore openings compared to the case where the aperture ratio of the pore openings is less than 40% and the ratio A / B is less than 2. In addition, compared to the case where the film thickness of the support layer exceeds 5 μm, autofluorescence is more easily suppressed.

[0025] (6) Alternatively, in the pore array filter described in any one of (1) to (5) above, the support layer has the through-holes leading to the pore openings.

[0026] It should be noted that the support layer may also have recesses leading to the pore openings (recesses that are recessed in such a way as to expose the pore openings).

[0027] According to this configuration, it is possible to capture an object entering from the pore openings on the support layer and at the same time discharge substances other than the object (for example, substances having a size smaller than the object) through the through-holes.

[0028] (7) Alternatively, in the pore array filter described in any one of (1) to (6) above, the pore openings are polygonal when viewed from the thickness direction of the pore layer.

[0029] It should be noted that the pore openings may also have edge portions with a linear shape when viewed from the thickness direction of the pore layer.

[0030] According to this configuration, it is easier to increase the density of the pore openings compared to the case where the pore openings are circular when viewed from the thickness direction of the pore layer.

[0031] (8) Alternatively, in the pore array filter described in any one of (1) to (7) above, the pore layer includes pore walls that divide the pore openings, and a plurality of the pore bottoms are divided at portions that coincide with the center positions in the width direction of the pore walls when viewed from the thickness direction of the pore layer.

[0032] It should be noted that the hole layer may also have hole walls that divide the hole openings. Additionally, the bottoms of multiple holes may also be divided at a portion where they coincide with the center position in the width direction of the hole wall when viewed in the thickness direction of the hole layer.

[0033] According to this configuration, compared with the case where the bottoms of multiple holes are divided at a portion where they do not coincide with the center position in the width direction of the hole wall when viewed in the thickness direction of the hole layer, the gap between the divided hole bottoms can be reliably filled with the hole wall, so that liquid leakage from outside the through holes can be reliably prevented.

[0034] (9) It may also be that, in the hole array filter described in any one of (1) to (8) above, when viewed in the thickness direction of the support layer, the minimum width between the divided hole bottoms is larger than the film thickness of the support layer.

[0035] According to this configuration, compared with the case where the minimum width between the divided hole bottoms is less than or equal to the film thickness of the support layer, it is easier to divide between the hole bottoms by photolithography.

[0036] (10) It may also be that the hole array filter described in any one of (1) to (9) above has an object placement surface for placing the object, and the object placement surface is covered with a cell non - adhesion material.

[0037] It should be noted that the hole array filter may also have an object placement surface for placing the object. Additionally, the object placement surface may also be covered with a cell non - adhesion material.

[0038] According to this configuration, adhesion of cells to the object placement surface can be suppressed.

[0039] It should be noted that the object placement surface is not only the upper surface of the hole bottom, but also includes the side surface of the hole wall, the upper surface, the lower surface of the support layer, and the entire hole array filter. For example, from the viewpoint of preventing cells from remaining on the hole wall, it is important that the upper surface of the hole wall is covered with a cell non - adhesion material.

[0040] (11) It may also be that, in the hole array filter described in any one of (1) to (10) above, when observing the back surface of the hole array filter with an optical microscope or a scanning electron microscope, lines appear along the outer shape of the hole bottom.

[0041] According to this configuration, the case where lines appear can be determined as the structure of the present invention, which helps to simplify the infringement determination.

[0042] (12) A hole array device according to an embodiment of the present invention is a hole array device for accommodating and arranging the object, and includes the hole array filter described in any one of (1) to (11) above.

[0043] It should be noted that the hole array device can also be a hole array device for accommodating and arranging the objects. In addition, the hole array device can include the hole array filter described in any one of the above (1) to (11).

[0044] According to this configuration, since the above hole array filter is provided, a hole array device capable of accommodating and arranging more objects per unit area can be provided.

[0045] (13) The manufacturing method of the hole array filter according to an embodiment of the present invention is the manufacturing method of the hole array filter described in any one of the above (1) to (11). This manufacturing method includes: a first step of forming a sacrificial film on a substrate, the sacrificial film being insoluble in a solvent that dissolves the materials constituting the support layer and the hole layer; a second step of forming the support layer and the hole layer on the sacrificial film after the first step; and a third step of dissolving the sacrificial film and peeling off the structure including the support layer and the hole layer from the substrate after the second step.

[0046] It should be noted that the manufacturing method of the hole array filter can be the manufacturing method of the hole array filter described in any one of the above (1) to (11). In addition, the manufacturing method of the hole array filter can also include a first step of forming a sacrificial film on a substrate, the sacrificial film being insoluble in a solvent that dissolves the materials constituting the support layer and the hole layer. In addition, the manufacturing method of the hole array filter can also include a second step of forming the support layer and the hole layer on the sacrificial film after the first step. In addition, the manufacturing method of the hole array filter can also include a third step of dissolving the sacrificial film and peeling off the structure including the support layer and the hole layer from the substrate after the second step.

[0047] According to this method, the stress applied to the support layer in the second step (for example, the stress accompanying the curing shrinkage of the support layer) can be absorbed between the bottoms of the divided holes, so that the deformation of the support layer can be suppressed. Therefore, a self-supporting hole array filter with a high opening ratio can be provided.

[0048] Advantages of the Invention

[0049] According to the hole array filter, hole array device, and manufacturing method of the hole array filter of the present embodiment, a self-supporting hole array filter with a high opening ratio can be provided. BRIEF DESCRIPTION OF THE DRAWINGS

[0050] Figure 1 is a top view of the hole array filter of the first embodiment. ​

[0051] Figure 2 is a view showing the II-II cross-sectional view of Figure 1 together with the capillary.

[0052] Figure 3 is a top view of the support layer of the first embodiment.

[0053] Figure 4 is a top view of the hole layer of the first embodiment.

[0054] Figure 5 is an explanatory view of the manufacturing method of the hole array filter of the first embodiment; Figure 5 (A) in Figure 5 is an explanatory view of the first step, Figure 5 (B) in Figure 5 is an explanatory view of the step following Figure 5 (A) in Figure 5 (C) in Figure 5 is an explanatory view of the step following Figure 5 (B) in Figure 5 (D) in Figure 5 is an explanatory view of the step following Figure 5 (C) in

[0055] Figure 6 is an explanatory view of the low opening ratio hole array of the first comparative example.

[0056] Figure 7 is an explanatory view of the high opening ratio hole array of the second comparative example.

[0057] Figure 8 is a view showing the state of film deformation in the second comparative example.

[0058] Figure 9 is an explanatory view of the operation of the hole array filter of the first embodiment.

[0059] Figure 10 is a top view of the support layer of the second embodiment.

[0060] Figure 11 is a top view of the hole bottom structure body of the third embodiment.

[0061] Figure 12 is a top view obtained by observing the support layer (before hole layer formation) on the wafer of the first example (corresponding to the first embodiment) using a scanning electron microscope.

[0062] Figure 13 ​​​​​​​​​​​​A plan view obtained by observing the hole layer (after hole layer formation) on the support layer of the first embodiment using a scanning electron microscope.

[0063] Figure 14 A plan view obtained by observing the support layer (before hole layer formation) on the wafer of the second embodiment (corresponding to the second implementation manner) using a scanning electron microscope.

[0064] Figure 15 A plan view obtained by observing the hole layer (after hole layer formation) on the support layer of the second embodiment using a scanning electron microscope.

[0065] Figure 16 A view obtained by observing the back surface of the hole array filter of the embodiment (corresponding to a hole opening width of 20 μm and a hole bottom main body width of 25 μm) using an optical microscope; Figure 16 (A) in [it] is an observation at 5000 times magnification, Figure 16 (B) in [it] is an observation at 2000 times magnification.

[0066] Figure 17 A view obtained by observing the back surface of the hole array filter of the embodiment (corresponding to a hole opening width of 20 μm) using a scanning electron microscope.

[0067] Figure 18 A view obtained by observing the back surface of the hole array filter of the embodiment (corresponding to a hole opening width of 50 μm) using a scanning electron microscope.

[0068] Figure 19 A view showing the figure obtained by observing the cross-section of the hole array filter of the embodiment using a scanning electron microscope together with each dimension.

[0069] Figure 20 A view showing the hole plan view together with each dimension.

[0070] Figure 21 A view obtained by observing the hole array filter of Example 1 using a scanning electron microscope; Figure 21 (A) in [it] is a perspective view, Figure 21 (B) in [it] is a cross-sectional view, Figure 21 (C) in [it] is a plan view.

[0071] Figure 22 A view obtained by observing the hole array filter of Example 2 using a scanning electron microscope; Figure 22 (A) in [it] is a perspective view, Figure 22 (B) in [it] is a cross-sectional view, Figure 22 (C) in [it] is a plan view.​​​​​​​​​

[0072] Figure 23 is a figure obtained by observing the pore array filter of Example 3 using a scanning electron microscope; Figure 23 (A) in it is a perspective view, Figure 23 (B) in it is a cross-sectional view, Figure 23 (C) in it is a top view.

[0073] Figure 24 is a figure obtained by observing the pore array filter of Example 4 using a scanning electron microscope; Figure 24 (A) in it is a perspective view, Figure 24 (B) in it is a cross-sectional view, Figure 24 (C) in it is a top view.

[0074] Figure 25 is a figure obtained by observing the pore array filter of Example 5 using a scanning electron microscope; Figure 25 (A) in it is a perspective view, Figure 25 (B) in it is a cross-sectional view, Figure 25 (C) in it is a top view.

[0075] Figure 26 is a figure obtained by observing the pore array filter of Example 6 using a scanning electron microscope; Figure 26 (A) in it is a perspective view, Figure 26 (B) in it is a cross-sectional view, Figure 26 (C) in it is a top view.

[0076] Figure 27 is a figure obtained by observing the pore array filter of Example 7 using a scanning electron microscope; Figure 27 (A) in it is a perspective view, Figure 27 (B) in it is a cross-sectional view, Figure 27 (C) in it is a top view.

[0077] Figure 28 is a figure obtained by observing the pore array filter of Example 8 using a scanning electron microscope; Figure 28 (A) in it is a perspective view, Figure 28 (B) in it is a cross-sectional view, Figure 28 (C) in it is a top view.

[0078] Figure 29 is a top view of the pore array filter of the comparative example.

[0079] Figure 30 is a top view of the support layer of the comparative example.

[0080] ​​​​​​​​​Figure 31 Top view of the hole layer of the comparative example.

[0081] Figure 32 View obtained by observing the upper surface of the hole array filter of the comparative example using an optical microscope.

[0082] Figure 33 Stereoscopic view obtained by observing the back surface of the hole array filter of the comparative example using a scanning electron microscope.

[0083] Figure 34 Planar view obtained by observing the back surface of the hole array filter of the comparative example using a scanning electron microscope. Detailed implementation mode

[0084] Hereinafter, embodiments of the present invention will be described based on the drawings. In the drawings, an XYZ axis coordinate system is shown as needed. In this specification, directions are determined along the XYZ coordinate system as needed for description. In this embodiment, the X direction is an example of the first direction and is a direction along the horizontal plane. The Y direction is an example of the second direction orthogonal to the first direction on the horizontal plane. The Z direction is an example of the third direction orthogonal to both the first direction and the second direction and is a direction along the vertical direction. The +Z direction corresponds to the upper side of the vertical direction. The -Z direction corresponds to the lower side of the vertical direction. Regarding the drawings used in the following description, in order to make the features of the present invention easily understandable, sometimes a part serving as a feature is enlarged and shown. In the drawings used in the following description, the dimensional ratios of the respective components are not necessarily the same as the actual ones.

[0085] <First Embodiment>

[0086] <Hole Array Filter>

[0087] Figure 1 Top view of the hole array filter 1 of the first embodiment. Figure 2 Is a diagram showing Figure 1 The II-II cross-sectional view together with the capillary 2. Figure 3 Top view of the support layer 20 of the first embodiment. Figure 4 Top view of the hole layer 10 of the first embodiment.

[0088] As Figures 1 to 4 shown, the hole array filter 1 has a through hole 23 at the hole bottom 21 that is sized such that an object 3 including at least one of cells, particles, and droplets does not pass through.

[0089] ​​​The pore array filter 1 is a constituent element of a pore array device for accommodating and arranging objects 3 (cells, particles, or droplets). For example, the pore array device may have a specimen chamber capable of separately accommodating specimens (cells, particles, or droplets) as objects 3. In this case, the pore array filter 1 may be a film-like component having a storage portion (pore bottom 21 corresponding to the pore opening 11) corresponding to the specimen chamber.

[0090] The pore array filter 1 includes: a pore layer 10 having a plurality of pore openings 11 sized for objects 3 to pass through; and a support layer 20 that supports the pore layer 10. The support layer 20 includes a plurality of pore bottoms 21 corresponding to the pore openings 11. At least a part between the plurality of adjacent pore bottoms 21 in the support layer 20 is divided. In the support layer 20 of the present embodiment, each pore bottom 21 is completely divided.

[0091] It should be noted that the support layer 20 may also be partially divided for each pore bottom 21.

[0092] For example, the pore array filter 1 has a flexibility such that it will not break even when pressed against the capillary 2. For example, the pore array filter 1 only needs to have a flexibility such that neither the pore layer 10 nor the support layer 20 will break even when the capillary 2 is pressed against the pore layer 10 on the support layer 20 from above.

[0093] For example, the pore array filter 1 is preferably formed in such a way that it is in focus over the entire film even when the focal length is set to a certain value.

[0094] The pore array filter 1 according to the present embodiment is formed of a photocurable resin. For example, the pore array filter 1 is formed of a negative resist. It should be noted that the material constituting the pore array filter 1 can be arbitrarily selected according to the object 3 to be accommodated. However, when through holes 23 sized for objects 3 not to pass through are regularly arranged, the material constituting the pore array filter 1 is preferably a negative photoresist or polydimethylsiloxane (PDMS), and most preferably a negative photoresist.

[0095] It should be noted that the material constituting the pore array filter 1 may further contain one or more materials selected from the group consisting of a negative photoresist, polydimethylsiloxane (PDMS), and / or their mixtures, and preferably contains a negative photoresist.

[0096] The pore array filter 1 has an object configuration surface 22 for disposing an object 3. The object configuration surface 22 is not only the upper surface of the pore bottom 21, but also includes the side surface, the upper surface of the pore wall 12, the lower surface of the support layer 20, and the entire pore array filter 1. For example, from the viewpoint of preventing cells from remaining on the pore wall 12, it is important that the upper surface of the pore wall 12 is covered with a cell non-adhesive material. In the present embodiment, the entire pore array filter 1 (corresponding to the object configuration surface 22) is covered with a cell non-adhesive material. For example, the object configuration surface 22 is coated with a cell non-adhesive polymer. For example, as the cell non-adhesive polymer, 2-methacryloyloxyethyl phosphorylcholine (MPC) polymer, oligoethylene glycol methacrylate (PEG), poly-2-methoxyethyl acrylate (PMEA), polyvinyl alcohol (PVA), etc. can be cited.

[0097] The aperture ratio of the pore opening 11 according to the present embodiment is 40% or more. The aperture ratio of the pore opening 11 (hereinafter, also referred to as "pore opening ratio") corresponds to the ratio of the entire area of the pore opening 11 to the entire area of the pore array filter 1 in a plan view (top view) of the pore array filter 1 (viewed from the thickness direction of the pore layer 10). For example, from the viewpoint of realizing a pore array filter 1 with a higher aperture ratio, the aperture ratio is preferably 50% or more, and more preferably 60% or more.

[0098] The pore opening 11 according to the present embodiment is hexagonal (an example of a polygon) in a plan view. Specifically, the plan view shape of the reticle (an example of a photomask) for forming the pore opening 11 is hexagonal. On the other hand, the actual plan view shape of the pore opening 11 is a hexagonal shape with rounded corners. The plan view shapes of the plurality of pore openings 11 each have a substantially the same hexagonal outer shape.

[0099] It should be noted that the pore opening 11 may have a linear edge portion when viewed from the thickness direction of the pore layer 10.

[0100] For example, the width of the pore opening 11 (hereinafter, also referred to as "pore opening width") C is preferably sized such that one or more objects 3 (cells, particles, or droplets) can enter. In the case where the plan view shape of the pore opening 11 is hexagonal, the pore opening width C corresponds to the interval between two opposite sides in the pore opening 11. In the example of the drawing, the pore opening width C is shown as the size for one spherical cell or particle as the object 3 to enter.

[0101] The pore layer 10 has pore walls 12 that divide the pore openings 11. The ratio A / B of the depth A of the pore layer 10 to the minimum width B of the partition portion between adjacent pores in the pore layer 10 is 2 or more. The depth A of the pore layer 10 (hereinafter also referred to as "pore depth") corresponds to the distance from the upper surface of the support layer 20 to the upper surface of the pore layer 10. The minimum width B of the partition portion between adjacent pores in the pore layer 10 (hereinafter also referred to as "pore wall width") corresponds to the interval between two opposite sides in the pore layer 10 (the pore walls 12 that divide the pore openings 11) when the top view shape of the pore opening 11 is hexagonal. For example, from the viewpoint of making the pore openings 11 more densely packed, the ratio A / B is preferably 2.5 or more, and more preferably 4 or more.

[0102] For example, the pore depth A is preferably larger than the size of cells or particles. For example, the pore depth A is preferably 10 μm or more. For example, when the diameter of spherical cells or particles is about 15 μm, from the viewpoint of more reliably accommodating them, the pore depth A is preferably 20 μm or more, and more preferably 30 μm or more. For example, from the viewpoint of suppressing autofluorescence while not hindering observation, the pore depth A is preferably 200 μm or less.

[0103] For example, the pore wall width B is preferably sized such that cells or particles do not rest on the pore walls 12. For example, the pore wall width B is preferably smaller than the size of cells or particles. For example, the pore wall width B is preferably 20 μm or less. For example, when the diameter of spherical cells or particles is about 15 μm, from the viewpoints of more reliably not resting on the pore walls 12 and making the pore openings 11 more densely packed, the pore wall width B is preferably 15 μm or less, and more preferably 10 μm or less. The pore wall width B in the present embodiment is about 10 μm.

[0104] The pore volume V is calculated based on the area of the pore opening 11 in the top view and the pore depth A. For example, when using a capillary to recover the content of the pore for subsequent analysis, the pore volume V is preferably a volume that can minimize the amount of liquid carried into the subsequent analysis.

[0105] For example, the film thickness T of the support layer 20 is preferably a film thickness that can minimize autofluorescence as much as possible. The film thickness T of the support layer 20 corresponds to the interval (average value) between the upper surface and the lower surface of the support layer 20. For example, the film thickness T of the support layer 20 is 5 μm or less. For example, from the viewpoint of further reducing autofluorescence, the film thickness T of the support layer 20 is more preferably 3 μm or less.

[0106] The support layer 20 has through holes 23 leading to the hole openings 11. In the example of the drawing, the support layer 20 has two circular through holes 23 in plan view at the central part of the hole bottom 21 corresponding to the hole opening 11. It should be noted that the configuration form of the through holes 23 is not particularly limited, and as long as they lead to the hole openings 11, they can have any plan view shape, and the number of through holes 23 is also not limited.

[0107] It should be noted that the support layer 20 may also have a recess (a recess that is recessed in such a way as to expose the hole opening 11) leading to the hole opening 11.

[0108] For example, the diameter of the through hole 23 is preferably such that the object 3 (cell, particle or droplet) does not pass through. For example, the diameter of the through hole 23 (hereinafter also referred to as "through hole diameter") D is preferably such that substances other than the object 3 (for example, substances having a smaller size than the object 3, etc.) can be discharged. For example, when the diameter of a spherical cell or particle is about 15 μm, from the viewpoint of more surely not passing through the through hole 23, the through hole diameter D is preferably 10 μm or less, more preferably 5 μm or less.

[0109] In the present embodiment, the plurality of hole bottoms 21 are divided at the part where they coincide with the center position in the width direction of the hole wall 12 (corresponding to the center of the hole wall width B) in plan view. In the hole array filter 1 according to the present embodiment, in plan view (viewed from the thickness direction of the support layer 20), the minimum width (hereinafter also referred to as "width between hole bottoms") S between the divided hole bottoms 21 is larger than the film thickness T of the support layer 20. In the present embodiment, the width between hole bottoms S is smaller than the hole wall width B. It should be noted that the mark W in the drawing represents the width of the hole bottom 21 in plan view (hereinafter also referred to as "width of the hole bottom main body").

[0110] <Manufacturing method of the hole array filter>

[0111] The manufacturing method of the hole array filter 1 according to the present embodiment is the manufacturing method of the above-mentioned hole array filter 1, and this manufacturing method includes: a first step of forming a sacrificial film 31 on the substrate 30, the sacrificial film 31 being insoluble in the solvent that dissolves the materials constituting the support layer 20 and the hole layer 10; a second step of forming the support layer 20 and the hole layer 10 on the sacrificial film 31 after the first step; and a third step of dissolving the sacrificial film 31 and peeling off the structure including the support layer 20 and the hole layer 10 from the substrate 30 after the second step.

[0112] Figure 5 It is an explanatory diagram of the manufacturing method of the hole array filter 1 of the first embodiment. Figure 5 In (A) is an explanatory diagram of the first step, Figure 5 In (B) is then Figure 5Explanatory drawing of process (A) in Figure 5 In (C), the joining part is Figure 5 Explanatory drawing of process (B) in Figure 5 In (D), the joining part is Figure 5 Explanatory drawing of process (C) in Figure 5 In (E), the joining part is Figure 5 Explanatory drawing of process (D) in Figure 5 In (F), the joining part is Figure 5 Explanatory drawing of process (E). Refer also to Figure 5 In (A), in the first process, a sacrificial film 31 is formed on a substrate 30.

[0113] For example, as materials for the sacrificial film 31, polyvinyl alcohol resin, dextrin, dextran, gelatin, glue, casein, shellac, gum arabic, starch, protein, polyacrylamide, sodium polyacrylate, polyvinyl methyl ether, styrene-based elastomer, copolymer of methyl vinyl ether and maleic anhydride, copolymer of vinyl acetate and itaconic acid, polyvinylpyrrolidone, acetyl cellulose, hydroxyethyl cellulose, sodium alginate, etc. can be cited. For example, as materials for the substrate 30, silicon, glass, PET film, etc. can be cited.

[0114] The method for forming the sacrificial film 31 is not particularly limited, but a method of coating a coating liquid for forming the sacrificial film 31 on the substrate 30 is preferred. For example, as a method of coating the coating liquid for forming the sacrificial film 31 on the substrate 30, methods using contact transfer type coating devices such as a roll coater, a reverse coater, and a bar coater, and non-contact type coating devices such as a spinner (rotary coating device) and a curtain coater can be cited. The sacrificial film 31 is formed by drying the coating film formed after coating by a method such as heating. The film thickness of the sacrificial film 31 is not particularly limited. For example, from the viewpoint of dissolving the sacrificial film 31 quickly, the film thickness of the sacrificial film 31 is preferably 10 nm or more and 180 nm or less. After the first process, the second process is entered.

[0115] Refer also to Figure 5 from (B) in Figure 5 to (E) in , in the second process, a support layer 20 and a hole layer 10 are formed on the sacrificial film 31.

[0116] First, a precursor film 32 of the support layer 20 is formed by coating a resist for the support layer 20 on the sacrificial film 31 (refer to Figure 5 (B) in ). For example, the film thickness of the precursor film 32 of the support layer 20 is adjusted so as to form a support layer 20 having a film thickness of 1.0 μm or more and 1.2 μm or less. For example, as materials for the resist of the support layer 20, negative photoresist can be cited.

[0117] Next, the surface of the precursor film 32 of the support layer 20 is selectively exposed in position and then developed. For example, as a method of selectively exposing the surface of the precursor film 32 of the support layer 20 in position, a method of exposing through a mask for a negative photoresist can be cited. For example, the developer is selected according to the type of the negative photoresist. By such a method, the support layer 20 is formed on the sacrificial film 31 (refer to Figure 5 in (C)).

[0118] Next, by coating a resist for the hole layer 10 on the sacrificial film 31, a precursor film 33 for the hole layer 10 is formed (refer to Figure 5 in (D)). For example, the film thickness of the precursor film 33 for the hole layer 10 is adjusted so as to form the hole layer 10 with a film thickness of 23 μm or more and 25 μm or less. For example, as the material of the resist for the hole layer 10, a negative photoresist can be cited.

[0119] Next, the surface of the precursor film 33 for the hole layer 10 is selectively exposed in position and then developed. For example, as a method of selectively exposing the surface of the precursor film 33 for the hole layer 10 in position, a method of exposing through a mask for a negative photoresist can be cited. For example, the developer is selected according to the type of the negative photoresist. By such a method, the support layer 20 and the hole layer 10 are formed on the sacrificial film 31 (refer to Figure 5 in (E)). After the second step, the third step is entered.

[0120] Refer to Figure 5 in (F) at the same time. In the third step, the sacrificial film 31 is dissolved, and the structure including the support layer 20 and the hole layer 10 is peeled off from the substrate 30. The dissolution liquid for dissolving the sacrificial film 31 is not particularly limited as long as it does not deteriorate or dissolve the support layer 20 and the hole layer 10. For example, as the dissolution liquid for dissolving the sacrificial film 31, water, an acidic or alkaline aqueous solution, an organic solvent, and an aqueous solution of an organic solvent can be cited.

[0121] Through the above steps, the hole array filter 1 of the present embodiment is manufactured. In the hole array filter 1 manufactured in this way, at least a part between the bottoms 21 of the plurality of holes adjacent to each other in the support layer 20 is divided. Therefore, it is suitable for use as a self-supporting hole array filter 1 with a high aperture ratio.

[0122] However, when the support layer 20 is a continuous body, there are the following problems.

[0123] First, as a first comparative example, the case where the support layer is a continuous body and the aperture ratio is low is described.

[0124] Figure 6 It is an explanatory diagram of the low-aperture ratio hole array of the first comparative example.

[0125] As shown Figure 6 in Figure 6 , the low opening ratio hole array of the first comparative example includes: a support layer 1020 (hereinafter also referred to as "continuous body support layer 1020") formed in a continuous manner along the sacrificial film 31; and a hole layer 1010 formed on the continuous body support layer 1020. The hole opening ratio of the first comparative example is lower than that of the embodiment.

[0126] In the case of the first comparative example, a part of the stress due to the curing shrinkage of the continuous body support layer 1020 under the hole layer 1010 is offset by the stress of the curing shrinkage of the hole layer 1010. In the case of the first comparative example, since the part of the hole layer 1010 has a high film thickness, its mechanical strength is high and it is not likely to cause shrinkage. In addition, since only the exposed area of the support layer 1020 is small and it is surrounded by the high film thickness hole layer 1010 with strong mechanical strength, the support layer 1020 is not likely to be deformed due to curing shrinkage.

[0127] Next, as the second comparative example, the case where the support layer is a continuous body and has a high opening ratio will be described.

[0128] Figure 7 is an explanatory diagram of the high opening ratio hole array of the second comparative example. Figure 8 is a diagram showing the state of film deformation in the second comparative example.

[0129] Referring simultaneously to Figure 7 and Figure 8 , the high opening ratio hole array of the second comparative example includes a continuous body support layer 2020 formed on the sacrificial film 31 and a hole layer 2010 formed on the continuous body support layer 2020. The hole opening ratio of the second comparative example is higher than that of the first comparative example.

[0130] In the case of the second comparative example, since the proportion of the hole layer 2010 part is smaller than that of the first comparative example, the stress due to the curing shrinkage of the continuous body support layer 2020 is difficult to be offset by the stress of the curing shrinkage of the hole layer 2010. Therefore, in the case of the second comparative example, the mechanical strength of the continuous body support layer 2020 part is low and it is likely to cause shrinkage. For example, when stress is concentrated on a part of the continuous body support layer 2020, as Figure 8 shown, the possibility of becoming a deformed state is high.

[0131] In contrast, in the hole array filter 1 of the present embodiment, since at least a part between the bottoms 21 of the plurality of holes adjacent to each other in the support layer 20 is divided, the possibility of the above problem occurring is low.

[0132] Figure 9 is an explanatory diagram of the operation of the hole array filter 1 of the first embodiment.

[0133] AsFigure 9 As shown, the pore array filter 1 of the present embodiment has a structure in which the support layer 20 is fragmented into a spliced shape, or a structure in which floor tiles are partially connected. In the example of the drawings, the floor tiles (corresponding to the pore bottoms 21) constituting the support layer 20 are completely divided.

[0134] In the case of the present embodiment, the curing shrinkage of the support layer 20 occurs locally rather than in the entire layer. Therefore, compared with the above comparative example, the stress accompanying the curing shrinkage of the support layer 20 is smaller in the case of the present embodiment. Therefore, according to the present embodiment, it is possible to fabricate a self-standing pore array filter 1 with a high aperture ratio using a support layer 20 that is thinner than that of the above comparative example.

[0135] <Function and effect>

[0136] As described above, the pore array filter 1 according to the present embodiment has a through-hole 23 at the pore bottom 21 that is sized such that an object 3 including at least one of cells, particles, and droplets cannot pass through. The pore array filter 1 includes: a pore layer 10 having a plurality of pore openings 11 sized such that the object 3 can pass through; and a support layer 20 that supports the pore layer 10. The support layer 20 includes a plurality of pore bottoms 21 corresponding to the pore openings 11. At least a part between the plurality of pore bottoms 21 adjacent to each other in the support layer 20 is divided.

[0137] According to this configuration, it is possible to absorb the stress applied to the support layer 20 (for example, the stress accompanying the curing shrinkage of the support layer 20) between the divided pore bottoms 21, and thus it is possible to suppress the deformation of the support layer 20. Therefore, it is possible to provide a self-standing pore array filter 1 with a high aperture ratio.

[0138] The support layer 20 according to the present embodiment is completely divided for each pore bottom 21.

[0139] According to this configuration, it is possible to absorb the stress applied to the support layer 20 as a whole between the divided pore bottoms 21, and thus it is possible to more effectively suppress the deformation of the support layer 20.

[0140] The pore array filter 1 according to the present embodiment is formed of a photocurable resin.

[0141] According to this configuration, it is possible to fabricate the pore array filter 1 by photolithography (for example, the steps of photoresist coating, exposure, and development) suitable for microfabrication.

[0142] The aperture ratio of the pore opening 11 according to the present embodiment is 40% or more. The ratio A / B of the depth A of the pore layer 10 to the minimum width B of the partition portion between adjacent pores in the pore layer 10 is 2 or more. The film thickness T of the support layer 20 is 5 μm or less.

[0143] According to this configuration, it is easier to increase the density of the hole openings 11 compared to the case where the opening ratio of the hole openings 11 is less than 40% and the ratio A / B is less than 2. In addition, compared to the case where the film thickness T of the support layer 20 exceeds 5 μm, autofluorescence is more easily suppressed.

[0144] The support layer 20 according to the present embodiment has through-holes 23 that lead to the hole openings 11.

[0145] According to this configuration, the target 3 that enters through the hole opening 11 can be captured on the support layer 20, and at the same time, substances other than the target 3 (for example, substances having a size smaller than the target 3) can pass through the through-holes 23 and be discharged.

[0146] The hole openings 11 according to the present embodiment are polygonal in plan view.

[0147] According to this configuration, it is easier to increase the density of the hole openings 11 compared to the case where the hole openings 11 are circular in plan view.

[0148] The hole layer 10 according to the present embodiment includes hole walls 12 that divide the hole openings 11. The plurality of hole bottoms 21 are divided at portions that coincide with the center positions in the width direction of the hole walls 12 in plan view.

[0149] According to this configuration, compared to the case where the plurality of hole bottoms 21 are divided at portions that do not coincide with the center positions in the width direction of the hole walls 12 in plan view, the hole walls 12 can surely fill the gaps between the divided hole bottoms 21, so that liquid leakage from outside the through-holes 23 can be surely prevented.

[0150] In the hole array filter 1 according to the present embodiment, in plan view, the minimum width S between the divided hole bottoms 21 is larger than the film thickness T of the support layer 20.

[0151] According to this configuration, it is easier to divide between the hole bottoms 21 by photolithography compared to the case where the minimum width S between the divided hole bottoms 21 is less than or equal to the film thickness T of the support layer 20.

[0152] The hole array filter 1 according to the present embodiment has an object placement surface 22 for placing the target 3. The object placement surface 22 is covered with a cell non-adhesive material.

[0153] According to this configuration, adhesion of cells to the object placement surface 22 can be suppressed. It should be noted that the object placement surface 22 is not only the upper surface of the hole bottom 21, but also includes the side surfaces and upper surface of the hole walls 12, the lower surface of the support layer 20, and the entire hole array filter 1. In the present embodiment, the entire hole array filter 1 including the upper surface of the hole walls 12 is covered with a cell non-adhesive material. Therefore, it is also suitable from the viewpoint that cells do not remain on the hole walls 12.

[0154] The pore array device according to this embodiment is a pore array device for accommodating and arranging objects 3, and includes the above-mentioned pore array filter 1.

[0155] According to this configuration, since the above-mentioned pore array filter 1 is included, a pore array device that can accommodate and arrange more objects per unit area can be provided.

[0156] It should be noted that the pore array device may also be a pore array device for accommodating and arranging objects 3. In addition, the pore array device may also include the above-mentioned pore array filter 1.

[0157] The manufacturing method of the pore array filter 1 according to this embodiment is the manufacturing method of the above-mentioned pore array filter 1, and this manufacturing method includes: a first step of forming a sacrificial film 31 on a substrate 30, and this sacrificial film 31 is insoluble in a solvent that dissolves the materials constituting the support layer 20 and the pore layer 10; a second step of, after the first step, forming the support layer 20 and the pore layer 10 on the sacrificial film 31; and a third step of, after the second step, dissolving the sacrificial film 31 and peeling off the structure including the support layer 20 and the pore layer 10 from the substrate 30.

[0158] According to this method, the stress (for example, the stress accompanying the curing shrinkage of the support layer 20) applied to the support layer 20 in the second step can be absorbed between the bottom portions 21 of the divided pores, so that the deformation of the support layer 20 can be suppressed. Therefore, a self-supporting pore array filter 1 with a high aperture ratio can be provided.

[0159] It should be noted that the manufacturing method of the pore array filter 1 may be the manufacturing method of the above-mentioned pore array filter 1. In addition, the manufacturing method of the pore array filter 1 may also include a first step of forming a sacrificial film 31 on a substrate 30, and this sacrificial film 31 is insoluble in a solvent that dissolves the materials constituting the support layer 20 and the pore layer 10. In addition, the manufacturing method of the pore array filter 1 may also include a second step of, after the first step, forming the support layer 20 and the pore layer 10 on the sacrificial film 31. In addition, the manufacturing method of the pore array filter 1 may also include a third step of, after the second step, dissolving the sacrificial film 31 and peeling off the structure including the support layer 20 and the pore layer 10 from the substrate 30.

[0160] <The Second Embodiment>

[0161] Figure 10 It is a top view of the support layer 220 of the second embodiment.

[0162] In the above-mentioned first embodiment, an example in which the support layer 20 is completely divided for each bottom portion 21 of the pore is described, but it is not limited thereto. For example, as Figure 10As shown, the support layer 220 may not be completely divided at the bottom of each hole 221. In the second embodiment, the same components as those in the first embodiment are denoted by the same reference numerals and detailed descriptions thereof are omitted.

[0163] The support layer 220 according to the present embodiment includes a plurality of hole bottoms 221 and connecting portions 225 that connect two adjacent hole bottoms 221 to each other. In the present embodiment, the support layer 220 is partially divided at each hole bottom 221. It should be noted that the mark J in the figure represents the width of the connecting portion 225 in a plan view (hereinafter also referred to as "connecting portion width").

[0164] In the example of the drawing, the plan view shape of the hole bottom 221 is a hexagon (an example of a polygon). The connecting portions 225 are provided between two adjacent hexagons in a plan view so as to connect the central portions of two opposite sides to each other. It should be noted that the setting position of the connecting portion 225 is not limited to the above. For example, the connecting portion 225 may be provided so as to connect the corner portions of two adjacent hexagons in a plan view.

[0165] <Function and effect>

[0166] As described above, the support layer 220 according to the present embodiment is partially divided at each hole bottom 221.

[0167] According to this configuration, stress applied to the support layer 220 can be locally absorbed between the divided hole bottoms 221. In addition, compared with the case where the support layer 20 is completely divided at each hole bottom 21, the mechanical strength is high. For example, at the time of stripping in lithography, the occurrence of defects such as the detachment of the hole bottom 221 can be prevented.

[0168] <Third embodiment>

[0169] Figure 11 It is a plan view of the hole bottom structure 327 of the third embodiment.

[0170] In the above first embodiment, an example in which the support layer 20 is completely divided at each hole bottom 21 has been described, but it is not limited thereto. For example, as Figure 11 shown, the support layer 320 may include a plurality of hole bottom structures 327 integrally connecting a plurality of hole bottoms 321. In Figure 11 , illustrations of the through holes 23 and the like are omitted. In the third embodiment, detailed descriptions of the same components as those in the first embodiment are omitted.

[0171] The support layer 320 according to this embodiment is divided by each bottom hole structure 327. In the example of the drawing, the bottom hole structure 327 is integrally formed by connecting three bottom hole parts 321. It should be noted that the configuration of the bottom hole structure 327 is not limited to the above. For example, the bottom hole structure 327 may also be integrally formed by connecting two or four or more bottom hole parts 321.

[0172] <Function and effect>

[0173] As described above, the support layer 320 according to this embodiment includes a plurality of bottom hole structures 327 formed by integrally connecting a plurality of the bottom hole parts 321. The support layer 320 is divided by each bottom hole structure 327.

[0174] According to this configuration, it is possible to locally absorb the stress applied to the support layer 320 between the divided bottom hole parts 321. In addition, compared with the case where the support layer 20 is completely divided by each bottom hole part 21, the mechanical strength is high. For example, during the peeling of photolithography, it is possible to prevent the occurrence of defects such as the detachment of the bottom hole part 321.

[0175] <Variant example>

[0176] In the above embodiment, an example in which the hole array filter is formed of a photocurable resin is described, but it is not limited thereto. For example, the hole array filter may also be formed of a thermosetting resin. For example, the forming material of the hole array filter can be changed according to the design specifications.

[0177] In the above embodiment, an example in which the opening ratio of the hole opening is 40% or more, the ratio A / B of the depth A of the hole layer to the minimum width B of the partition between adjacent holes in the hole layer is 2 or more, and the film thickness of the support layer is 5 μm or less is described, but it is not limited thereto. For example, the opening ratio of the hole opening may also be less than 40%. For example, the ratio A / B may also be less than 2. For example, the film thickness of the support layer may also exceed 5 μm. For example, the opening ratio of the hole opening, the ratio A / B, and the film thickness of the support layer can be changed according to the design specifications.

[0178] In the above embodiment, an example in which the support layer has a through hole leading to the hole opening is described, but it is not limited thereto. For example, the support layer may not have a through hole leading to the hole opening. For example, the configuration of the support layer can be changed according to the design specifications.

[0179] In the above embodiment, an example in which the hole opening is polygonal when viewed from the thickness direction of the hole layer is described, but it is not limited thereto. For example, the hole opening may also be circular when viewed from the thickness direction of the hole layer. For example, the shape of the hole opening (equivalent to the top view shape) viewed from the thickness direction of the hole layer can be changed according to the design specifications.

[0180] In the above-described embodiments, an example was described in which the hole layer has hole walls that divide the hole openings, and the plurality of hole bottoms are divided at portions where they coincide with the center position in the width direction of the hole walls when viewed from the thickness direction of the hole layer, but it is not limited thereto. For example, the plurality of hole bottoms may also be divided at portions where they do not coincide with the center position in the width direction of the hole walls when viewed from the thickness direction of the hole layer. For example, the division pattern of the hole bottoms can be changed according to the design specifications.

[0181] In the above-described embodiments, an example was described in which the minimum width between the divided hole bottoms is larger than the film thickness of the support layer when viewed from the thickness direction of the support layer, but it is not limited thereto. For example, the minimum width between the divided hole bottoms may also be equal to or less than the film thickness of the support layer. For example, when viewed from the thickness direction of the support layer, the size of the minimum width between the divided hole bottoms can be changed according to the design specifications.

[0182] In the above-described embodiments, an example was described in which the hole array filter has an object placement surface for placing an object, and the object placement surface is covered with a cell non-adhesive material, but it is not limited thereto. For example, the object placement surface may not be covered with a cell non-adhesive material. For example, at least a part of the object placement surface may be exposed to the outside. For example, the object placement surface may also be covered with a cell adhesive material. For example, the covering form of the object placement surface can be changed according to the design specifications.

[0183] The object (cell, particle, or droplet) accommodated / aligned in the hole array filter of the present embodiment is not particularly limited. For example, when using a cell as the object, it may include only a single cell or an aggregate of multiple cells. For example, cell clusters (cell groups) are included in the cells.

[0184] In addition, within the scope not departing from the gist of the present invention, the constituent elements in the above-described embodiments can be replaced with known constituent elements. In addition, the above-described various modified examples can also be combined.

[0185] Examples

[0186] Next, for the hole array filter according to the above-described embodiments of the present invention, examples will be shown and described in detail. It should be noted that the following examples are a specific example of applying the present invention, but do not limit the present invention.

[0187] <Observation Results of the First Example (Corresponding to the First Embodiment)>

[0188] Figure 12A plan view obtained by observing the support layer (before forming the hole layer) on the wafer of the first embodiment (corresponding to the first embodiment) using a scanning electron microscope. Figure 13 A plan view obtained by observing the hole layer (after forming the hole layer) on the support layer of the first embodiment using a scanning electron microscope.

[0189] Refer to Figure 12 and Figure 13 In the first embodiment, a hole array filter is fabricated under the condition that the width between hole bottoms (2.6 μm) is smaller than the width of the hole wall (9.3 μm). In the first embodiment, the main width of the hole bottom is set to 27.8 μm, and the width of the hole opening is set to 21.4 μm.

[0190] <Observation results of the second embodiment (corresponding to the second embodiment)>

[0191] Figure 14 A plan view obtained by observing the support layer (before forming the hole layer) on the wafer of the second embodiment (corresponding to the second embodiment) using a scanning electron microscope.

[0192] Figure 15 A plan view obtained by observing the hole layer (after forming the hole layer) on the support layer of the second embodiment using a scanning electron microscope.

[0193] Refer to Figure 14 and Figure 15 In the second embodiment, a hole array filter is fabricated under the condition that the width between hole bottoms (4.6 μm) is smaller than the width of the hole wall (8.8 μm). In the second embodiment, the main width of the hole bottom is set to 55.6 μm, and the width of the hole opening is set to 52.5 μm.

[0194] <Observation results of the back surface of the hole array filter>

[0195] Figure 16 A view obtained by observing the back surface of the hole array filter of the embodiment (corresponding to a hole opening width of 20 μm and a main hole bottom width of 25 μm) using an optical microscope (specifically, a digital microscope HRX-01 manufactured by HIROX Co., Ltd.; photographed with coaxial epi-illumination). Figure 16 (A) in Figure 16 is an observation at 5000 times magnification, Figure 17 (B) in Figure 18Figure obtained by observing the back surface of the pore array filter of the example (equivalent to a pore opening width of 50 μm) using a scanning electron microscope (specifically, a field emission scanning electron microscope model SU-5000 manufactured by Hitachi High-Technologies Corporation; acceleration voltage 5 kV; observation at 1000 times magnification).

[0196] Refer also to Figures 16 to 18 , in the pore array filter according to the example, when observing the back surface (equivalent to the lower surface) of the pore array filter using an optical microscope or a scanning electron microscope, it was confirmed that lines appeared in a portion along the outer shape of the pore bottom.

[0197] As described above, in the pore array filter according to this example, when observing the back surface of the pore array filter using an optical microscope or a scanning electron microscope, lines appear in a portion along the outer shape of the pore bottom.

[0198] According to this configuration, when lines appear, it can be determined as the structure of the present invention, which helps to simplify the infringement determination.

[0199] [Example of manufacturing a self-supporting pore array filter with a high opening ratio]

[0200] Figure 19 Figure showing the cross-section of the pore array filter of the example observed using a scanning electron microscope together with each dimension. Table 1 is a table showing the manufacturing conditions and each dimension of the pore array filter of the example.

[0201] [Table 1]

[0202]

[0203] Refer also to Figure 19 and Table 1, the pore opening width and the pore wall width are values measured at the position of 50% of the pore depth in the image obtained by observing the cross-section of the pore array filter of the example using a scanning electron microscope.

[0204] For Examples 1 to 5, a mask reticle 1 (an example of a photomask) was used and the exposure amount during pore layer formation was changed to form a pattern. The mask reticle 1 is a mask for manufacturing a pore array filter having a pore opening with a hexagonal shape in plan view, and is designed such that the main body width of the pore bottom is 27.5 μm, the width between pore bottoms is 2.5 μm, the pore opening width is 20 μm, and the pore wall width is 10 μm.

[0205] In Example 6 and Example 7, a mask original 2 (an example of a photomask) was used, and the exposure amount during hole layer formation was changed to fabricate a pattern. The mask original 2 is a mask for fabricating a hole array filter having a hole opening with a hexagonal shape in plan view, and is designed such that the main body width at the hole bottom is 56 μm, the width between hole bottoms is 4 μm, the hole opening width is 52 μm, and the hole wall width is 8 μm.

[0206] In Example 8, a mask original 3 (an example of a photomask) was used, and the exposure amount during hole layer formation was changed to fabricate a pattern. The mask original 3 is a mask for fabricating a hole array filter having a hole opening with a hexagonal shape in plan view, and is designed such that the main body width at the hole bottom is 56 μm, the width between hole bottoms is 4 μm, the connection part width is 10 μm, the hole opening width is 52 μm, and the hole wall width is 8 μm.

[0207] Figure 20 The figure shows the hole plan view and each dimension together. Table 2 is a table comparing the prior art (existing technology) with the examples.

[0208] [Table 2]

[0209]

[0210] Simultaneously referring to Figure 20 and Table 2, in the prior art where the hole opening has a circular shape in plan view, the hole opening width is set as the opening diameter (the diameter of the hole opening). In the prior art where the hole opening has a circular shape in plan view, the minimum width between hole openings is set as the minimum width of the wall part that divides two adjacent hole openings in plan view. In the prior art where the hole opening has a circular shape in plan view, the center - to - center distance is set as the distance between the centers of two adjacent hole openings in plan view.

[0211] In the examples, the patterned wafer was cooled with liquid nitrogen and then cut, and then, the hole array filter obtained by immersing in p - menthane was observed using a scanning electron microscope. The plan view size of the hole array filter obtained as described above was set to 21 mm × 21 mm.

[0212] Figure 21 The figure is a view obtained by observing the hole array filter of Example 1 using a scanning electron microscope. Figure 21 In (A) is a perspective view, Figure 21 in (B) is a cross - sectional view, Figure 21 and in (C) is a plan view. Figure 22 The figure is a view obtained by observing the hole array filter of Example 2 using a scanning electron microscope. Figure 22 In (A) is a perspective view, Figure 22 in (B) is a cross - sectional view, Figure 22 and in (C) is a plan view.Figure 23 This is a figure obtained by observing the pore array filter of Example 3 using a scanning electron microscope. Figure 23 (A) in it is a perspective view, Figure 23 and (B) in it is a cross-sectional view, Figure 23 and (C) in it is a top view. Figure 24 This is a figure obtained by observing the pore array filter of Example 4 using a scanning electron microscope. Figure 24 (A) in it is a perspective view, Figure 24 and (B) in it is a cross-sectional view, Figure 24 and (C) in it is a top view. Figure 25 This is a figure obtained by observing the pore array filter of Example 5 using a scanning electron microscope. Figure 25 (A) in it is a perspective view, Figure 25 and (B) in it is a cross-sectional view, Figure 25 and (C) in it is a top view. Figure 26 This is a figure obtained by observing the pore array filter of Example 6 using a scanning electron microscope. Figure 26 (A) in it is a perspective view, Figure 26 and (B) in it is a cross-sectional view, Figure 26 and (C) in it is a top view. Figure 27 This is a figure obtained by observing the pore array filter of Example 7 using a scanning electron microscope. Figure 27 (A) in it is a perspective view, Figure 27 and (B) in it is a cross-sectional view, Figure 27 and (C) in it is a top view. Figure 28 This is a figure obtained by observing the pore array filter of Example 8 using a scanning electron microscope. Figure 28 (A) in it is a perspective view, Figure 28 and (B) in it is a cross-sectional view, Figure 28 and (C) in it is a top view.

[0213] Referring also to Figures 21 to 28 , it was confirmed that self-standing pore array filters can be obtained under any conditions in Examples 1 to 8.

[0214] <Manufacturing Example of Pore Array Filter of Comparative Example with Continuum Support Layer>

[0215] Figure 29 This is a top view of the pore array filter of the comparative example. Figure 30 This is a top view of the support layer of the comparative example. Figure 31 This is a top view of the pore layer of the comparative example.

[0216] Referring also to Figures 29 to 31, the pore array filter of the comparative example was fabricated by overlapping a pore layer on a continuum support layer. In the comparative example, the pore array filter was fabricated such that the film thickness of the continuum support layer was 1 μm, the film thickness of the pore layer was 50 μm, the main body width of the pore bottom was 46 μm, and the width between pore bottoms was 4 μm.

[0217] Figure 32 FIG. is an image obtained by observing the upper surface of the pore array filter of the comparative example using an optical microscope. Figure 33 FIG. is a stereoscopic image obtained by observing the back surface of the pore array filter of the comparative example using a scanning electron microscope. Figure 34 FIG. is a plan view obtained by observing the back surface of the pore array filter of the comparative example using a scanning electron microscope.

[0218] Refer to Figures 32 to 34 In the comparative example, when observing the upper surface or the back surface of the pore array filter using an optical microscope or a scanning electron microscope, wrinkles (wrinkle-like defects) were confirmed to appear. It is speculated that the reason is the stress acting on the continuum support layer during the curing shrinkage of the pore layer and the stress generated by the curing shrinkage of the continuum support layer itself, which causes the pore layer and the continuum support layer to be mechanically peeled off from the sacrificial film and bulge upward.

[0219] As described above, according to the present embodiment, compared with the prior art, it was confirmed that a structure with a high pore opening ratio and a deep pore depth can be fabricated. Therefore, according to the present embodiment, it is possible to suppress cells or particles remaining on the wall without entering the pore openings to a minimum, and at the same time, cells or particles can be arranged at a high density.

[0220] Industrial Applicability

[0221] When using the pore array filter, pore array device, and manufacturing method of the pore array filter of the present invention, a self-standing pore array filter with a high opening ratio can be provided.

[0222] Description of Reference Numerals

[0223] 1... pore array filter, 3... object, 10... pore layer, 11... pore opening, 12... pore wall, 20... support layer, 21... pore bottom, 22... object placement surface, 23... through hole, 30... substrate, 31... sacrificial film, 327... pore bottom structure, A... pore depth (depth of the pore layer), B... pore wall width (minimum width of the partition between adjacent pores in the pore layer), S... width between pore bottoms (minimum width between the divided pore bottoms), T... film thickness of the support layer

Claims

1. A pore array filter having through-holes at the bottom of the pores that are sized such that an object including at least one of cells, particles, and droplets does not pass through, wherein, The pore array filter includes: a pore layer having a plurality of pore openings of a size through which the object can pass; and a support layer that supports the pore layer, wherein the support layer includes a plurality of pore bottoms corresponding to the pore openings, and at least a part between the plurality of pore bottoms adjacent to each other in the support layer is divided.

2. The pore array filter according to claim 1, wherein, The support layer is completely divided for each of the pore bottoms.

3. The pore array filter according to claim 1, wherein, The support layer includes a plurality of pore bottom structures integrally connecting the plurality of pore bottoms, and the support layer is divided for each of the pore bottom structures.

4. The pore array filter according to any one of claims 1 to 3, wherein The pore array filter is formed of a photocurable resin.

5. The pore array filter according to any one of claims 1 to 3, wherein, The aperture ratio of the pore openings is 40% or more, and the ratio A / B of the depth A of the pore layer to the minimum width B of the partition portion between adjacent pores in the pore layer is 2 or more. The film thickness of the support layer is 5 μm or less.

6. The pore array filter according to any one of claims 1 to 3, wherein, The support layer has through holes leading to the pore openings.

7. The pore array filter according to any one of claims 1 to 3, wherein The pore openings are polygonal when viewed from the thickness direction of the pore layer.

8. The pore array filter according to any one of claims 1 to 3, wherein, The pore layer includes pore walls that define the pore openings, and the plurality of pore bottoms are divided at portions that coincide with the center positions in the width direction of the pore walls when viewed from the thickness direction of the pore layer.

9. The pore array filter according to any one of claims 1 to 3, wherein, When viewed from the thickness direction of the support layer, the minimum width between the divided pore bottoms is larger than the film thickness of the support layer.

10. The pore array filter according to any one of claims 1 to 3, wherein, The pore array filter has an object placement surface for placing the object, and the object placement surface is covered with a cell non-adhesive material.

11. The pore array filter according to any one of claims 1 to 3, wherein, When the back surface of the pore array filter is observed with an optical microscope or a scanning electron microscope, lines appear along the outer shape of the pore bottoms.

12. A pore array device for accommodating and arranging the object, the pore array device including the pore array filter according to any one of claims 1 to 3.

13. A method for manufacturing a pore array filter, which is a method for manufacturing the pore array filter according to any one of claims 1 to 3, the manufacturing method including: a first step of forming a sacrificial film on a substrate, the sacrificial film being insoluble in a solvent that dissolves the materials constituting the support layer and the pore layer; a second step of forming the support layer and the pore layer on the sacrificial film after the first step; and a third step of dissolving the sacrificial film and peeling off the structure including the support layer and the pore layer from the substrate after the second step.

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