Wafer coating device and control method thereof

Abstract

The present application relates to a wafer coating device and a control method thereof. It comprises: a coating chamber; a clamping assembly, which clamps the wafer and drives the wafer to be immersed in the coating liquid in a manner of tilting at a preset angle, and drives the wafer to enter a horizontal state after being immersed in the coating liquid; a liquid supply assembly; comprising a first liquid supply part and a second liquid supply part located below the clamping assembly, the first liquid supply part comprising a first liquid supply port extending inwardly along the circumference of the coating chamber for supplying liquid in a first direction; the second liquid supply part comprising a second liquid supply port extending upwardly along the bottom end of the coating chamber for supplying liquid in a second direction; a control component for controlling the clamping assembly and the liquid supply assembly; in the process of the wafer being immersed in the coating liquid, the liquid flow rates of the first liquid supply port and the second liquid supply port are controlled to be the first preset flow rate and the second preset flow rate respectively; after the wafer enters the horizontal state, the liquid flow rates of the first liquid supply port and the second liquid supply port are controlled to be the first preset flow rate. The technical solution of the present application can improve the coating quality.

Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing, and in particular to a wafer coating device and a control method thereof. Background Art

[0002] A wafer is a silicon wafer used in the manufacture of silicon semiconductor integrated circuits. Its starting material is silicon, and due to its round shape, it is called a wafer or silicon wafer. During the production process, the wafer undergoes electroplating, which involves depositing a layer of conductive metal on the wafer. This conductive metal layer is then processed to form conductive circuits. As the fundamental material of chips, wafers have extremely high requirements for the electroplated coating, and therefore, the process requirements are also high. The uniformity of the coating during wafer electroplating is crucial to guarantee wafer quality.

[0003] Currently, there are two main types of wafer electroplating equipment based on the position of the anode and cathode: one is a vertical electroplating device, and the other is a horizontal electroplating device. As for the horizontal electroplating device, during electroplating, the wafer is placed horizontally with the surface to be plated facing downward, which facilitates the loading and unloading of the wafer. Moreover, since the surface to be plated of the wafer is at the same depth in the plating solution, the pressure is the same everywhere, which can achieve better electroplating uniformity compared to the vertical electroplating device. However, the part of the wafer hanger that supports the wafer protrudes from the bottom plane of the wafer, forming a corner. As the wafer gradually immerses in the electroplating solution, some gas is trapped at the corner and cannot be discharged, forming bubbles on the bottom plane of the wafer, affecting the quality of electroplating. Summary of the Invention

[0004] In view of this, the present application provides a wafer coating device and a control method thereof to solve at least one problem existing in the background technology.

[0005] To achieve the above objectives, the technical solution of this application is implemented as follows:

[0006] In a first aspect, an embodiment of the present application provides a wafer coating device, comprising:

[0007] a coating chamber for containing a coating liquid;

[0008] a clamping assembly configured to clamp a wafer and drive the wafer to be immersed in the coating liquid in a manner of tilting at a preset angle, and drive the wafer to a horizontal state after the wafer is immersed in the coating liquid;

[0009] A liquid supply assembly for adding coating liquid to the coating chamber; comprising a first liquid supply member and a second liquid supply member located below the clamping assembly, wherein the first liquid supply member comprises a first liquid supply port extending inwardly along the circumference of the coating chamber for supplying liquid in a first direction; and the second liquid supply member comprises a second liquid supply port extending upwardly along the bottom end of the coating chamber for supplying liquid in a second direction.

[0010] A control component for controlling the clamping assembly;

[0011] The control component is also used to control the liquid supply assembly; during the process of immersing the wafer in the coating liquid, the liquid flow rates of the first liquid supply port and the second liquid supply port are controlled to be the first preset flow rate and the second preset flow rate respectively; after the wafer enters a horizontal state, the liquid flow rates of the first liquid supply port and the second liquid supply port are controlled to be the first preset flow rate; the second preset flow rate is greater than the first preset flow rate.

[0012] In combination with the first aspect of the present application, in an optional embodiment, the clamping assembly is further controlled to: make the movement of the wafer immersed in the coating liquid a uniform descending movement or a uniformly accelerated descending movement; the speed of the descending movement of the wafer before entering the horizontal state is 45 mm / s-150 mm / s.

[0013] In combination with the first aspect of the present application, in an optional embodiment, the clamping assembly includes a supporting portion that supports the wafer from the bottom of the wafer, and the side wall of the supporting portion is configured to form a guide slope that forms an obtuse angle with the lower surface of the wafer to facilitate the discharge of gas along the guide slope; the angle of the obtuse angle is 95°-150°.

[0014] In combination with the first aspect of the present application, in an optional embodiment, the thickness of the supporting portion is 0.8 mm-1.2 mm.

[0015] In conjunction with the first aspect of the present application, in an optional embodiment, the ratio of the second preset flow rate to the first preset flow rate is 2-4.

[0016] In combination with the first aspect of the present application, in an optional embodiment, the liquid outlet direction of the second liquid supply port is tilted toward one side in the vertical direction, and the tilt direction is consistent with the tilt direction of the wafer when it is placed in the coating chamber.

[0017] In combination with the first aspect of the present application, in an optional embodiment, the first liquid supply member further includes a liquid outlet guide member, and the orthographic projection of the wafer does not overlap with the liquid outlet guide member.

[0018] In a second aspect, an embodiment of the present application provides a method for controlling a wafer coating device as described above, the method comprising:

[0019] Controlling the clamping assembly to drive the wafer to be immersed in the coating liquid in a tilted manner at a preset angle, and the wafer to enter a horizontal state after being immersed in the coating liquid;

[0020] During the process of immersing the wafer in the coating liquid, the liquid flow rates of the first liquid supply port and the second liquid supply port are controlled to be the first preset flow rate and the second preset flow rate respectively; after the wafer enters a horizontal state, the liquid flow rates of the first liquid supply port and the second liquid supply port are controlled to be the first preset flow rate; the second preset flow rate is greater than the first preset flow rate.

[0021] In conjunction with the second aspect of the present application, in an optional embodiment, controlling the clamping assembly to drive the wafer to be immersed in the coating liquid in a tilted manner at a preset angle, and the wafer entering a horizontal state after being immersed in the coating liquid, includes:

[0022] The clamping assembly is controlled so that the movement of the wafer immersed in the coating liquid is a uniform downward movement or a uniformly accelerated downward movement; the downward movement speed of the wafer before entering the horizontal state is 45mm / s-150mm / s.

[0023] In combination with the first aspect of the present application, in an optional embodiment, the ratio of the second preset flow rate to the first preset flow rate is 2-4.

[0024] The wafer coating device and control method provided in the embodiment of the present application are configured such that a first liquid supply port for supplying liquid in a first direction and a second liquid supply port for supplying liquid in a second direction are provided. In the process of the wafer being gradually immersed in the coating liquid from never being immersed in the coating liquid, the first liquid supply port can supply liquid at a first preset flow rate, and the second liquid supply port can supply liquid at a second preset flow rate greater than the first preset flow rate to generate an upward flow field, and supply liquid toward the corner of the wafer and the clamping assembly. Moreover, since the wafer is tilted, the coating liquid level surges toward the corner at the higher end to push the air at the corner to move and squeeze it out, thereby preventing bubbles from forming at the corner when the wafer is completely immersed in the coating, and improving the coating quality.

[0025] Additional aspects and advantages of the present application will be given in part in the description below, and in part will become apparent from the description below, or will be learned through practice of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] The drawings described herein are used to provide a further understanding of the present application and constitute a part of the present application. The illustrative embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:

[0027] Figure 1 A schematic cross-sectional view of a wafer coating device provided in an embodiment of the present application;

[0028] Figure 2 A schematic diagram of a liquid supply assembly in a wafer coating apparatus provided in an embodiment of the present application;

[0029] Figure 3 for Figure 2 Schematic diagram of the top projection of ;

[0030] Figure 4 Schematic diagram of the clamping assembly and wafer in the wafer coating device provided in the embodiment of the present application Figure 1 ;

[0031] Figure 5 for Figure 4 A partial enlarged schematic diagram of point A in the middle;

[0032] Figure 6 Schematic diagram of the clamping assembly and wafer in the wafer coating device provided in the embodiment of the present application Figure 2 ;

[0033] Figure 7 for Figure 6 A partial enlarged schematic diagram of point B in the middle;

[0034] Figure 8 A schematic flow chart of a control method for a wafer coating device according to an embodiment of the present application;

[0035] Figure 9 A schematic structural diagram of a control device for a wafer coating device provided in an embodiment of the present application;

[0036] Figure 10 A schematic diagram of the structure of a computing device provided in an embodiment of the present application.

[0037] Description of reference numerals:

[0038] 10. Coating chamber; 21. First liquid supply member; 211. First flow channel support member; 212. First liquid supply port; 213. Liquid outlet guide member; 22. Second liquid supply member; 221. Second flow channel support member; 222. Second liquid supply port; 40. Clamping assembly; 41. Guide slope; 50. Wafer; 80. Control device of wafer coating device; 81. First control module; 82. Second control module; 90. Computing device; 91. Storage component; 92. Communication bus; 93. Processing component; 94. Input device; 95. Output device; 96. External communication interface. DETAILED DESCRIPTION

[0039] To make the technical solutions and beneficial effects of this application more clearly understood, the following detailed description is given by way of specific embodiments. The accompanying drawings are not necessarily drawn to scale, and local features may be enlarged or reduced to more clearly illustrate the details of the local features. Unless otherwise defined, the technical and scientific terms used herein have the same meanings as those in the technical field to which this application belongs.

[0040] In the description of this application, the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "height", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise" and the like to indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of simplifying the description of this application, and do not indicate that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and should not be understood as a limitation to this application.

[0041] In this application, the terms "first" and "second" are used solely for descriptive purposes and should not be construed as indicating the relative importance of the features indicated or the quantity of the technical features indicated. Therefore, a feature specified as "first" or "second" may explicitly include at least one of such features. Throughout this application, "plurality" means at least two, such as two or three, and "several" means at least one, such as one, two, or three, unless otherwise specifically defined.

[0042] In this application, unless otherwise expressly defined, the terms "installed," "connected," "connect," "fixed," and "disposed" should be interpreted broadly. For example, "connection" can mean fixed, removable, or integrated; it can mean mechanical or electrical; it can mean direct or indirect connection through an intermediary; it can also mean internal communication between two components or an interaction between two components. Those skilled in the art will understand the specific meanings of these terms in this application based on the specific circumstances.

[0043] In the present application, unless otherwise explicitly defined, when a first feature is “on,” “above,” “above,” “above,” “below,” “below,” or “below” a second feature, the first feature and the second feature may be in direct contact, or the first feature and the second feature may be in indirect contact via an intermediate medium. Moreover, when a first feature is “on,” “above,” or “above” a second feature, it may mean that the first feature is directly above or obliquely above the second feature, or simply means that the horizontal height of the first feature is higher than the horizontal height of the second feature. When a first feature is “below,” “below,” or “below” a second feature, it may mean that the first feature is directly below or obliquely below the second feature, or simply means that the horizontal height of the first feature is lower than the horizontal height of the second feature.

[0044] In order to fully understand the present application, detailed steps and detailed structures will be presented in the following description to illustrate the technical solution of the present application. The preferred embodiments of the present application are described in detail below. However, in addition to these detailed descriptions, the present application may also have other implementation methods. Example 1

[0045] The present application provides a wafer coating device, referring to Figures 1-4 ,include:

[0046] a coating chamber 10 for containing a coating liquid;

[0047] The clamping assembly 40 is configured to clamp the wafer 50 and drive the wafer 50 to be immersed in the coating liquid at a preset angle, and drive the wafer 50 to a horizontal state after the wafer 50 is immersed in the coating liquid;

[0048] A liquid supply assembly for adding coating liquid to the coating chamber 10; comprising a first liquid supply member 21 and a second liquid supply member 22 located below the clamping assembly 40; the first liquid supply member 21 comprising a first liquid supply port 212 extending inwardly along the circumference of the coating chamber 10 for supplying liquid in a first direction; the second liquid supply member 22 comprising a second liquid supply port 222 extending upwardly from the bottom end of the coating chamber 10 for supplying liquid in a second direction;

[0049] A control component for controlling the clamping assembly 40;

[0050] The control component is also used to control the liquid supply assembly; during the process of immersing the wafer 50 in the coating liquid, the liquid flow rates of the first liquid supply port 212 and the second liquid supply port 222 are controlled to be the first preset flow rate and the second preset flow rate respectively; after the wafer 50 enters a horizontal state, the liquid flow rates of the first liquid supply port 212 and the second liquid supply port 222 are controlled to be the first preset flow rate; the second preset flow rate is greater than the first preset flow rate.

[0051] Specifically, the coating device may be an electroplating device, but it is understood that it may also be other coating devices.

[0052] It can be understood that during the coating process, the metal ions in the coating liquid will be continuously consumed as the deposition on the surface of the wafer 50 proceeds, and the concentration will also decrease. Therefore, it is necessary to replenish the coating liquid into the coating chamber 10 through the liquid supply component to continuously provide metal ions for metal deposition on the surface of the wafer 50.

[0053] It can be understood that by directing the first liquid supply port 212 toward the first direction at a first preset flow rate to supply liquid to the coating chamber 10, since the first direction is the circumferential direction of the liquid supply component, the upward momentum and velocity of the coating liquid flowing out of the plurality of first liquid supply ports 212 are superimposed on each other to form an overall upward flow field; further, by controlling the liquid supply flow rate of the second liquid supply port 222 at a second preset flow rate during the process of immersing the wafer 50 in the coating liquid, and the second preset flow rate is greater than the first preset flow rate, the faster flow rate flowing out of the second liquid supply port 222 causes the coating liquid to surge upward and superimpose the overall upward flow field generated by the first liquid supply port 212. In the process of the wafer 50 being gradually immersed in the coating liquid in an inclined manner, the surging coating liquid will tend to move toward the corner between the wafer 50 and the clamping assembly 40 along the lower surface of the inclined wafer 50, so that when the wafer 50 is about to be completely immersed in the coating liquid in an inclined manner, the surging coating liquid enters the corner between the wafer 50 and the clamping assembly 40, and the higher end of the inclined wafer 50 has not yet been immersed in the coating liquid, so that the coating liquid surging into the corner squeezes out the air at the corner, thereby preventing bubbles from being generated at the corner between the wafer 50 and the clamping assembly 40 after the wafer 50 is completely immersed in the coating liquid.

[0054] That is, the first direction is the direction in which the circumference of the coating chamber 10 extends inward. If the coating chamber 10 is circular, the first direction may be radial. The second direction is the direction in which the bottom end of the coating chamber 10 extends upward. If the coating chamber 10 is circular, the second direction may be axial.

[0055] Specifically, the second liquid supply port 222 may be disposed below the middle portion of the wafer 50 to better cooperate with the first liquid supply port 212 located at the edge portion of the wafer 50 to form a flow field that pushes the bubbles upward.

[0056] Furthermore, due to the existence of edge effects during the coating process, the coating layer thickness at the edge portion of the wafer 50 is greater than that at the middle portion, resulting in an uneven coating on the wafer 50. The second liquid supply port 222 located in the middle supplies liquid at a second preset flow rate, so that the coating liquid below the middle portion of the wafer 50 is updated faster, and the supply of metal ions is more sufficient, which helps to form a higher metal ion concentration in the middle portion of the wafer 50, thereby promoting the coating reaction in the middle portion of the wafer 50. The distribution of current density in the middle portion of the wafer 50 is relatively enhanced, and the difference in current density with the edge portion of the wafer 50 is reduced, thereby avoiding the edge effect and improving the uniformity of the coating on the wafer 50.

[0057] It should be noted that in this embodiment, the wetting angle of the coating liquid is less than 80°. At this time, the coating liquid can spread well on the lower surface of the wafer 50, and the coating liquid has strong adhesion to the lower surface of the wafer 50, which is further beneficial for the coating liquid to squeeze out the gas at the corner.

[0058] In this embodiment, the wafer 50 is dipped into the coating liquid at a predetermined angle, so that the contact area between the wafer 50 and the coating liquid gradually increases, providing more time for the air in the corner between the clamping assembly 40 and the wafer 50 to be exhausted. In this embodiment, the predetermined angle may be 3°-5°.

[0059] After the wafer 50 enters the horizontal state, the liquid supply flow rate of the second liquid supply port 222 is restored to the lower first preset flow rate, which can make the coating liquid in the coating chamber 10 flow more smoothly, thereby improving the coating quality.

[0060] In other embodiments of the present application, the ratio of the second preset flow rate to the first preset flow rate is 2-4. That is, the second preset flow rate may be 2 to 4 times the first preset flow rate. The large flow rate difference generates significant shear force in the coating liquid in the coating chamber 10. The shear force can break the adhesion between the air and the wafer 50 or the clamping assembly 40, thereby facilitating the discharge of air.

[0061] Specifically, the first preset flow rate may be 0.5 m / s-0.8 m / s; the second preset flow rate may be 1 m / s-3.2 m / s.

[0062] In other embodiments of the present application, the clamping assembly 40 is further controlled so that the movement of the wafer 50 immersed in the coating liquid is a uniform downward movement or a uniformly accelerated downward movement; the flow rate of the wafer 50 in the downward movement before entering the horizontal state is 45 mm / s-120 mm / s. Preferably, the flow rate of the wafer 50 in the downward movement before entering the horizontal state is 100 mm / s. It can also be understood that the instantaneous flow rate of the wafer 50 before entering the horizontal state is 45 mm / s-120 mm / s.

[0063] It can be understood that by maintaining a sufficient flow rate of the descending wafer 50, when the wafer 50 is immersed in the coating liquid, a certain impact effect will be generated in the coating liquid in the coating chamber 10, so that the coating liquid can quickly fill the corner between the wafer 50 and the clamping assembly 40, and when the rapidly descending wafer 50 is immersed in the coating liquid in the coating chamber 10, the pressure of the coating liquid increases rapidly. The rapidly increased pressure and the coating liquid that quickly fills the corner are conducive to squeezing out the air at the corner.

[0064] In other embodiments of the present application, the first liquid supply part 21 includes a first flow channel support part 211 surrounding the coating chamber 10, and the first liquid supply port 212 is opened on the inner wall of the first flow channel support part 211; the second liquid supply part 22 includes a second flow channel support part 221 horizontally spanning the inner cavity of the coating chamber 10, and the second liquid supply port 222 is opened on the top wall of the second flow channel support part 221.

[0065] The flow channel support member can stabilize the flow rate at the liquid supply port. The first flow channel support member 211 surrounds the coating chamber 10, and the second flow channel support member 221 spans the interior of the coating chamber 10, neither interfering with the coating process within the coating space of the coating chamber 10. The flow channel support member is a collective term for the first flow channel support member 211 and the second flow channel support member 221.

[0066] In other embodiments of the present application, reference is made to Figure 5-Figure 7 The clamping assembly 40 includes a supporting portion that supports the wafer 50 from the bottom of the wafer 50. The side wall of the supporting portion is configured as a guide bevel 41 that forms an obtuse angle with the lower surface of the wafer 50, and the angle of the obtuse angle is 95°-150°. After many tests, it was found that the guide bevel 41 at this angle can further facilitate the discharge of air along the guide bevel 41; if the angle formed by the side wall of the supporting portion and the lower surface of the wafer 50 is too small, the air will easily accumulate at the corner and be difficult to discharge; if the angle formed by the side wall of the supporting portion and the lower surface of the wafer 50 is too large, the direction of air movement will easily change, and deflection or stagnation will occur between the wafer 50 and the supporting portion, and the air will not be able to be discharged smoothly along the guide bevel 41, resulting in the coating liquid being unable to evenly cover the surface of the wafer 50. In addition, a too large angle of the guide bevel 41 will also cause the wafer 50 to be unstable.

[0067] The guide bevel 41 is provided with a smooth bevel, which is conducive to the movement and discharge of gas along the bevel. Compared with the arc surface, the processing cost of the bevel is lower.

[0068] In other embodiments of the present application, the thickness of the supporting portion is 0.8 mm-1.2 mm.

[0069] When the angle of the guide slope 41 is constant, the length of the guide slope 41 can be reduced by reducing the thickness of the supporting portion, thereby reducing the residence time of air on the guide slope 41 and facilitating air discharge.

[0070] In other embodiments of the present application, the liquid outlet direction of the second liquid supply port 222 is inclined toward one side in the vertical direction, and the inclined direction is consistent with the inclined direction when the wafer 50 is placed in the coating chamber 10, so that the liquid provided by the second liquid supply port 222 is directed toward the corner to better push the air at the corner to flow toward the higher end of the inclined wafer 50 for discharge.

[0071] In some other embodiments of the present application, the first liquid supply member 21 further includes a liquid outlet guide 213 , and the orthographic projection of the wafer 50 does not overlap with the liquid outlet guide 213 .

[0072] Since the second liquid supply port 222 is already facing the center of the wafer 50, the non-overlapping setting can disperse the liquid out of the first liquid supply port 212 around the wafer 50 as much as possible, drive the bubble flow more comprehensively, and facilitate the discharge of bubbles.

[0073] Specifically, the liquid outlet guide 213 is a guide bar extending along the radial direction of the wafer 50. The upper surface of the guide bar is provided with a guide groove with an arc-shaped cross section, which is conducive to reducing the flow resistance of the coating liquid.

[0074] In some other embodiments of the present application, the wafer coating device further includes:

[0075] a first fluid valve, configured to control the flow of the first liquid supply member 21;

[0076] The second fluid valve is used to control the flow of the second liquid supply member 22 .

[0077] That is, the flow rates of the two liquid supply parts are controlled independently without interfering with each other. Example 2

[0078] The present application embodiment provides a control method for the wafer coating device as described in the first embodiment, referring to Figure 8 , the method comprising:

[0079] Step 601: Controlling the clamping assembly to drive the wafer to be immersed in the coating liquid at a preset tilt angle, and the wafer is brought into a horizontal state after being immersed in the coating liquid;

[0080] Step 602: During the process of immersing the wafer in the coating liquid, the liquid supply flow rates of the first liquid supply port and the second liquid supply port are controlled to be the first preset flow rate and the second preset flow rate respectively; after the wafer enters a horizontal state, the liquid supply flow rates of the first liquid supply port and the second liquid supply port are controlled to be the first preset flow rate; the second preset flow rate is greater than the first preset flow rate.

[0081] In step 601, the wafer 50 is immersed in the coating liquid in a tilted manner at a preset angle, so that the contact area between the wafer 50 and the coating liquid gradually increases, providing sufficient time for the discharge of air between the clamping assembly 40 and the wafer 50. In addition, the wafer 50 is immersed in the coating liquid in a tilted manner at a preset angle, and the air between the wafer 50 and the clamping assembly 40 can flow from low to high along the tilted lower surface of the wafer 50 to facilitate the discharge of air.

[0082] Specifically, the preset angle may be 3°-5°.

[0083] In step 602, the wafer 50 is in a tilted state, and the liquid supply flow rate of the second liquid supply port 222 is set to a higher second preset flow rate, so that the coating liquid in the coating chamber 10 surges, and because the wafer 50 is set to be tilted, the surging coating liquid has a tendency to move toward the corner. When the wafer 50 is about to be completely immersed in the coating liquid, the air is driven by the coating liquid to be discharged from the higher end of the wafer 50 that has not been immersed in the coating liquid, thereby preventing bubbles from forming at the corner between the wafer 50 and the clamping assembly 40 after the wafer 50 is completely immersed in the coating liquid.

[0084] In other embodiments of the present application, controlling the clamping assembly 40 to drive the wafer 50 to be immersed in the coating liquid at a preset tilt angle, and the wafer 50 to enter a horizontal state after being immersed in the coating liquid, includes:

[0085] The clamping assembly 40 is controlled so that the movement of the wafer 50 immersed in the coating liquid is a uniform downward movement or a uniformly accelerated downward movement; the flow rate of the downward movement of the wafer 50 before entering the horizontal state is 45mm / s-150mm / s.

[0086] Understandably, maintaining a sufficient descending speed is necessary to coordinate the liquid flow rate of the second liquid supply member 22 and expel the gas from the corners. Therefore, the descending speed needs to be limited. Specifically, the descending speed of the wafer 50 before entering the horizontal state can be 45 mm / s-55 mm / s. This ensures sufficient movement stability and a good air extrusion effect.

[0087] In some other embodiments of the present application, the ratio of the second preset flow rate to the first preset flow rate is 2-4.

[0088] That is, the second preset flow rate can be 2 to 4 times the first preset flow rate, which is conducive to exhausting air.

[0089] Specifically, the first preset flow rate may be 0.5 m / s-0.8 m / s; the second preset flow rate may be 1 m / s-3.2 m / s. Example 3

[0090] The present application embodiment provides a control device 80 for a wafer coating device, referring to Figure 9 , the control device 80 of the wafer coating device includes:

[0091] A first control module 81 is configured to control the clamping assembly 40 to drive the wafer 50 to be immersed in the coating liquid at a preset tilt angle, and to cause the wafer 50 to enter a horizontal state after being immersed in the coating liquid;

[0092] The second control module 82 is used to control the first liquid supply port 212 and the liquid supply flow rate to be the first preset flow rate and the second preset flow rate respectively during the process of the wafer 50 being immersed in the coating liquid; after the wafer 50 enters the horizontal state, the liquid supply flow rates of the first liquid supply port 212 and the second liquid supply port 222 are controlled to be the first preset flow rate; the second preset flow rate is greater than the first preset flow rate.

[0093] The first control module 81 is immersed in the coating liquid in a tilted manner at a preset angle, so that bubbles flow from low to high and concentrate at high places, which is conducive to discharging bubbles and reducing bubbles in coating.

[0094] Specifically, the preset angle may be 3°-5°.

[0095] In the second control module 82, when the wafer 50 is tilted, bubbles tend to gather upward, facilitating their discharge. Therefore, the liquid supply flow rate of the second liquid supply port 222 is set to a higher, second, preset flow rate to discharge more bubbles. After the wafer 50 is horizontal, the liquid supply flow rate of the second liquid supply port 222 is restored to the lower, first, preset flow rate, ensuring smoother flow of the coating liquid within the coating chamber 10 and improving coating quality.

[0096] In some other embodiments of the present application, the first control module 81 is further configured to:

[0097] The clamping assembly 40 is controlled so that the movement of the wafer 50 immersed in the coating liquid is a uniform downward movement or a uniformly accelerated downward movement; the downward movement speed of the wafer 50 before entering the horizontal state is 45mm / s-150mm / s.

[0098] Understandably, maintaining a sufficient descending speed is necessary to coordinate the liquid flow rate of the second liquid supply member 22 and expel the gas from the corners. Therefore, the descending speed needs to be limited. Specifically, the descending speed of the wafer 50 before entering the horizontal state can be 45 mm / s-55 mm / s. This ensures sufficient movement stability and a good air extrusion effect.

[0099] In some other embodiments of the present application, in the second control module 82, the ratio of the second preset flow rate to the first preset flow rate is 2-4.

[0100] That is, the second preset flow rate can be 2 to 4 times the first preset flow rate, which is conducive to exhausting air.

[0101] Specifically, the first preset flow rate may be 0.5 m / s-0.8 m / s; the second preset flow rate may be 1 m / s-3.2 m / s.

[0102] Each module included in this embodiment can be implemented by a processor in a computer; of course, it can also be implemented by a logic circuit in the computer. The processor can be a general-purpose processor, a digital signal processor (DSP), a field-programmable gate array (FPGA), or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc. Among them, the general-purpose processor can be a central processing unit (CPU), a microprocessor (MPU), or any other conventional processor.

[0103] The description of the above device embodiment is similar to the description of the above method embodiment and has similar beneficial effects as the method embodiment. For technical details not disclosed in the device embodiment of this application, please refer to the description of the method embodiment in this application for understanding. Example 4

[0104] The present application embodiment provides a computing device 90, referring to Figure 10 The computing device 90 includes a storage component 91, a communication bus 92, and a processing component 93, wherein:

[0105] The storage component 91 is used to store a control method program of the wafer coating device;

[0106] The communication bus 92 is used to realize the connection and communication between the storage component 91 and the processing component 93;

[0107] The processing component 93 is used to execute the control method program of the wafer coating device to implement the steps of the method described in the second embodiment.

[0108] The type or structure of the storage component 91 can be found in the storage medium below and will not be described in detail here.

[0109] The processing unit 93 may be a general-purpose processor, a digital signal processor (DSP), a field programmable gate array (FPGA), or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc. The general-purpose processor may be a central processing unit (CPU), a microprocessor (MPU), or any other conventional processor.

[0110] In some embodiments, computing device 90 may further include an input device 94, an output device 95, and an external communication interface 96. These components are interconnected via a bus system and / or other connection mechanisms (not shown). In this embodiment, the input device may be a network connector, an analog-to-digital converter, etc., and the output device may be a display, a speaker, etc.

[0111] In some embodiments, the input device 94 may also include, for example, a keyboard, a mouse, a microphone, etc. The output device 95 may output various information to the outside. For example, in addition to the display and speakers mentioned above, it may also include a printer, a projector, a communication network and its connected remote output devices, etc. The external communication interface 96 may be wired, such as a standard serial port (RS232), a general-purpose interface bus (GPIB) interface, an Ethernet interface, a universal serial bus (USB) interface, or wireless, such as wireless network communication technology (WiFi), Bluetooth, etc.

[0112] The description of the computing device 90 embodiment above is similar to the description of the method embodiment above, and has similar beneficial effects as the method embodiment. For technical details not disclosed in the computing device 90 embodiment of this application, please refer to the description of the method embodiment in this application for understanding. Example 5

[0113] An embodiment of the present application provides a computer-readable storage medium having an executable program stored thereon. When the executable program is executed by a processor, the steps of the method described in the second embodiment are implemented.

[0114] Exemplarily, the computer-readable storage medium may adopt any combination of one or more readable media. The readable medium may be a readable signal medium or a readable storage medium. A computer-readable storage medium is a tangible device that can hold and store instructions used by an instruction execution device. The readable storage medium may include, for example, but is not limited to, electrical, magnetic, optical, electromagnetic, infrared, or semiconductor systems, devices or devices, or any combination of the above. More specific examples of readable storage media (a non-exhaustive list) include: a portable computer disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), a flash memory, a portable compact disc read-only memory (CD-ROM), a digital versatile disc (DVD), a memory stick, a floppy disk, a mechanical encoding device, such as a punch card or a raised structure in a groove on which instructions are stored, and any suitable combination of the above. Among them:

[0115] The RAM includes: static random access memory (SRAM), synchronous static random access memory (SSRAM), dynamic random access memory (DRAM), synchronous dynamic random access memory (SDRAM), double data rate synchronous dynamic random access memory (DDRSDRAM), enhanced synchronous dynamic random access memory (ESDRAM), synchronous link dynamic random access memory (SLDRAM), and direct rambus random access memory (DRRAM).

[0116] The ROM includes: Programmable Read-Only Memory (PROM), Erasable Programmable Read-Only Memory (EPROM), and Electrically Erasable Programmable Read-Only Memory (EEPROM).

[0117] The computer-readable storage medium used herein is not to be construed as a transient signal per se, such as a radio wave or other freely propagating electromagnetic wave, an electromagnetic wave propagating through a waveguide or other transmission medium (e.g., light pulses through a fiber optic cable), or an electrical signal transmitted through wires.

[0118] The description of the computer-readable storage medium embodiment above is similar to the description of the method embodiment above, and has similar beneficial effects as the method embodiment. For technical details not disclosed in the computer-readable storage medium of this embodiment, please refer to the description of the method embodiment in this application for understanding.

[0119] It should be noted that the various embodiments provided in the embodiments of the present application belong to the same concept; the various technical features in the technical solutions recorded in the various embodiments can be arbitrarily combined to form new embodiments without conflict.

[0120] In the above description, the terms "first\second\..." are only used to distinguish similar objects and do not represent a specific order of the objects. It can be understood that "first\second\third" can be interchanged with a specific order or sequence when permitted.

[0121] It should be noted that, in this document, the terms "comprises," "includes," or any other variations thereof are intended to encompass non-exclusive inclusion, such that a process, method, article, or apparatus comprising a series of elements includes not only those elements but also other elements not explicitly listed, or elements inherent to such process, method, article, or apparatus. In the absence of further limitations, an element defined by the phrase "comprising a ..." does not exclude the presence of other identical elements in the process, method, article, or apparatus comprising the element.

[0122] In the embodiments of this application, unless otherwise specified and limited, the term "connection" should be understood in a broad sense. For example, it can be an electrical connection, or it can be a connection between two components. It can be a direct connection or an indirect connection through an intermediate medium. For ordinary technicians in this field, the specific meaning of the above terms can be understood according to the specific circumstances.

[0123] The purpose of the terms used herein is only to describe specific embodiments and is not intended to limit the present application. When used herein, the singular forms "a", "an", and "the" are also intended to include the plural forms, unless the context clearly indicates otherwise. The terms "comprising" and / or "including", when used in this specification, determine the presence of the features, integers, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or groups. When used herein, the term "and / or" includes any and all combinations of the relevant listed items.

[0124] It should be understood that references to "one embodiment" or "some embodiments" throughout this specification mean that a particular feature, structure, or characteristic associated with the embodiment is included in at least one embodiment of the present application. Therefore, the appearance of "in one embodiment" or "in some embodiments" throughout this specification does not necessarily refer to the same embodiment. Furthermore, these particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. It should be understood that, in the various embodiments of this application, the embodiment numbers are for descriptive purposes only and do not represent the superiority or inferiority of the embodiments.

[0125] It should be understood that the size of the serial numbers of the above processes does not mean the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of the present application.

[0126] It should be understood that the above embodiments are exemplary and are not intended to encompass all possible implementations of the technical solutions of the present application. Various modifications and variations may be made based on the above embodiments without departing from the scope disclosed herein. Similarly, the various technical features of the above embodiments may be arbitrarily combined to form additional embodiments of the present application that may not be explicitly described. Therefore, the above embodiments merely illustrate several implementations of the present application and do not limit the scope of protection of the patent application.

Claims

1. A wafer coating device, characterized in that: include: a coating chamber for containing a coating liquid; a clamping assembly configured to clamp a wafer and drive the wafer to be immersed in the coating liquid in a manner of tilting at a preset angle, and drive the wafer to a horizontal state after the wafer is immersed in the coating liquid; A liquid supply assembly for adding coating liquid to the coating chamber; comprising a first liquid supply member and a second liquid supply member located below the clamping assembly, wherein the first liquid supply member comprises a first liquid supply port extending inwardly along the circumference of the coating chamber for supplying liquid in a first direction; and the second liquid supply member comprises a second liquid supply port extending upwardly along the bottom end of the coating chamber for supplying liquid in a second direction. A control component is used to control the clamping assembly and the liquid supply assembly; during the process of immersing the wafer in the coating liquid, the liquid flow rates of the first liquid supply port and the second liquid supply port are controlled to be a first preset flow rate and a second preset flow rate respectively; after the wafer enters a horizontal state, the liquid flow rates of the first liquid supply port and the second liquid supply port are controlled to be the first preset flow rate; the second preset flow rate is greater than the first preset flow rate.

2. The wafer coating device according to claim 1, characterized in that: The clamping assembly is further controlled so that the movement of the wafer immersed in the coating liquid is a uniform descending movement or a uniformly accelerated descending movement; the speed of the wafer's descending movement before entering a horizontal state is 45 mm / s-150 mm / s.

3. The wafer coating device according to claim 1, characterized in that: The clamping assembly includes a supporting portion that supports the wafer from the bottom of the wafer, and the side wall of the supporting portion is configured to form a guide slope that forms an obtuse angle with the lower surface of the wafer to facilitate gas discharge along the guide slope; the obtuse angle is 95°-150°.

4. The wafer coating device according to claim 3, characterized in that: The thickness of the supporting portion is 0.8 mm to 1.2 mm.

5. The wafer coating device according to claim 1, characterized in that: The ratio of the second preset flow rate to the first preset flow rate is 2-4.

6. The wafer coating device according to claim 1, characterized in that: The liquid outlet direction of the second liquid supply port is tilted toward one side in the vertical direction, and the tilting direction is consistent with the tilting direction of the wafer when it is placed in the coating chamber.

7. The wafer coating device according to claim 1, characterized in that: The first liquid supply member further includes a liquid outlet guide member, and the orthographic projection of the wafer does not overlap with the liquid outlet guide member.

8. A control method for a wafer coating device according to any one of claims 1 to 7, characterized in that: The method comprises: Controlling the clamping assembly to drive the wafer to be immersed in the coating liquid in a tilted manner at a preset angle, and the wafer to enter a horizontal state after being immersed in the coating liquid; During the process of immersing the wafer in the coating liquid, the liquid flow rates of the first liquid supply port and the second liquid supply port are controlled to be the first preset flow rate and the second preset flow rate respectively; after the wafer enters a horizontal state, the liquid flow rates of the first liquid supply port and the second liquid supply port are controlled to be the first preset flow rate; the second preset flow rate is greater than the first preset flow rate.

9. The control method of the wafer coating device according to claim 8, characterized in that: The controlling the clamping assembly to drive the wafer to be immersed in the coating liquid in a tilted manner at a preset angle, and the wafer entering a horizontal state after being immersed in the coating liquid, includes: The clamping assembly is controlled so that the movement of the wafer immersed in the coating liquid is a uniform downward movement or a uniformly accelerated downward movement; the downward movement speed of the wafer before entering the horizontal state is 45mm / s-150mm / s.

10. The control method of the wafer coating device according to claim 8, characterized in that: The ratio of the second preset flow rate to the first preset flow rate is 2-4.

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