Anode with three-dimensional structure as well as preparation method and application of anode

Abstract

The invention discloses an anode with a three-dimensional structure and a preparation method and application thereof, and belongs to the technical field of electroplating. The anode with the three-dimensional structure provided by the invention comprises an anode active component; the anode active part has a wave structure and consists of at least two sections of sub active parts; a partition gap is formed between every two adjacent sections of sub-active parts; a conductive member; and each section of sub-active component is independently communicated with one conductive component. According to the anode, segmented power supply of the anode active component can be achieved, in the using process, current distribution on the anode active component is more uniform, the voltage consistency is higher, and the electroplating requirement of an existing high-endpoint-value product is met; and the electroplating uniformity is better. The invention also provides a preparation method and application of the anode.

Description

Technical Field

[0001] The present invention relates to the technical field of electroplating, and particularly to a three-dimensional anode, a preparation method thereof, and an application thereof. Background Art

[0002] With the rapid development of electronic information technology, electroplating equipment has been continuously upgraded and updated, evolving from the original manual electroplating line and automatic gantry electroplating line to the commonly used VCP line (vertical continuous electroplating line) and horizontal electroplating line. Currently, most anode structures are such that a cable is connected to an anode rod, a titanium basket is hung on the anode rod, copper balls are placed in the titanium basket bag, and an anode bag is put on the outside for production. Electroplating equipment is a continuous operation type of equipment. During the uninterrupted production process, the anode becomes passivated, affecting electroplating uniformity and electroplating efficiency. Therefore, for the traditional soluble anode pulse line to ensure uniformity, the anode needs to be regularly cleaned every three months to remove anode mud. Each cleaning consumes about 10% of copper, resulting in cost waste. The time for line shutdown maintenance and adjusting the potion when starting the line is relatively long, leading to a reduction in the utilization rate and having a greater impact on production capacity. Against this background, insoluble anodes emerged. Continuous production is achieved through anodic dissolution of copper oxide powder in an auxiliary tank + insoluble anode pulse or anodic dissolution of pure copper in an auxiliary tank + insoluble anode pulse. Moreover, the current density can be increased from the working current density of 1.0 ASD - 1.5 ASD of the traditional pulse VCP line to 4.0 - 5.5 ASD, greatly shortening the electroplating time, and the production efficiency can be increased by 20% - 50%. Currently, all the insoluble anodes visible in the market are planar. During the electroplating process of printed circuit boards, the throughing power (hereinafter referred to as TP value) is acceptable for board thicknesses below 1.5 mm. However, affected by the difficulty of electroplating, during the electroplating process of boards with an aspect ratio exceeding 10:1, the influence is more obvious. Taking the penetration of VIA holes (Vertical Interconnect Access Hole) at the BGA (Ball Grid Array) position with a backplane board thickness of 5.0 mm and a minimum hole diameter of 0.2 mm as an example, the planar insoluble anode only has about 70%, and the TP value is poor. In order to meet the requirements of VIA copper thickness, electroplating must be thickened, and the surface copper thickness at the BGA position will be too thick, resulting in problems with difficult etching.

[0003] In summary, during the electroplating process, the existing insoluble anodes have a poor TP value for small holes at the BGA position, resulting in a large difference in surface copper thickness, poor copper plating uniformity, and low copper plating efficiency. Summary of the Invention

[0004] The present invention aims to solve at least one of the technical problems existing in the prior art. For this reason, the present invention provides a three-dimensional anode, which can effectively improve electroplating uniformity and electroplating efficiency.

[0005] The present invention also provides a preparation method for the above-mentioned anode.

[0006] The present invention also provides an electrolysis device including the above-mentioned anode.

[0007] The present invention also provides an application of the above-mentioned electrolysis device.

[0008] According to an embodiment of the first aspect of the present invention, a three-dimensional anode is provided. The anode includes: An anode active component; the anode active component has a wavy structure and is composed of at least two sub-active components; a segmentation gap is provided between adjacent two sub-active components; A conductive component; each sub-active component is separately connected to a conductive component.

[0009] The anode according to the embodiment of the present invention has at least the following beneficial effects: Compared with a planar anode, the three-dimensional anode provided by the present invention solves the problem of poor deep plating ability of the backplane and other ultra-thick plate parts. The deep plating ability of the VIA holes at the BGA position of the electroplated backplane is increased from 70% to more than 85%, improving the deep plating ability of the backplane, reducing the etching difficulty of fine lines, and improving the product quality; at the same time, the improvement of the deep plating ability further saves the copper consumption and reduces the production cost.

[0010] For the anode provided by the present invention, the anode active component is divided into several sub-active components, and each sub-active component is powered separately, which can significantly improve the current and voltage uniformity of each part of the anode active component, and further improve the uniformity of the electroplated coating.

[0011] For the anode provided by the present invention, the sub-active components can be powered separately or powered off separately. When the size of the anode is significantly larger than that of the cathode, in order to avoid the uneven copper plating thickness caused by the serious mismatch between the anode and cathode sizes, some sub-active components can be powered off to achieve the size matching between the working anode active component and the cathode.

[0012] In summary, for the anode provided by the present invention, through the adjustment of the structure of the anode active component and the power supply mode, when it is applied to electroplating, the uniformity of the obtained coating is further improved, and it is more suitable for the electroplating requirements of precision circuit boards for high-precision products such as AI servers.

[0013] According to some embodiments of the present invention, the shape of the segmentation gap is linear.

[0014] According to some embodiments of the present invention, the included angle between the extending direction of the wavy structure and the extending direction of the segmentation gap is θ, and 0° ≤ θ < 90°.

[0015] According to some embodiments of the present invention, the included angle between the extending direction of the wave structure and the extending direction of the dividing gap is θ, and 0° < θ < 90°. For example, it can specifically be about 10°, 20°, 30°, 40°, 50°, 60°, 70° or about 80°.

[0016] According to some embodiments of the present invention, the shape of the dividing gap is an irregular shape. The irregular shape includes at least one of a wavy shape, a serrated shape, and other irregular shapes. That is, it includes all other shapes except the straight line type.

[0017] When the extending direction of the wave structure and the extending direction of the dividing gap are not parallel (the dividing gap is of a straight line type); during electroplating, no matter how the cathode operates, there will be partial overlap between the anode and the cathode, so even if the dividing gap is set, it will not affect the uniformity of electroplating; on the contrary, if it is of a straight line type and parallel to the extending direction of the wave structure, there will be no corresponding cathode in the part of the dividing gap, and the coating at the corresponding position may be uneven.

[0018] According to some embodiments of the present invention, the material of the conductive component is titanium.

[0019] According to some embodiments of the present invention, the conductive component includes a terminal and a frame structure connected and arranged; the frame structure is fixed on the sub-active component.

[0020] To avoid collision between multiple terminals and affect individual power supply; the terminal is in an L shape. The short side length of the L shape is 20 - 30 mm; for example, it can specifically be about 25 mm.

[0021] The thickness of the conductive component is 3 - 8 mm; for example, it can specifically be about 5 mm.

[0022] In actual production, the above dimensions are not strictly restricted, as long as they can meet the requirements of no short circuit between each other and achieving power-on.

[0023] According to some embodiments of the present invention, the terminal is provided with a hole structure.

[0024] According to some embodiments of the present invention, the anode further includes an anode rod; the anode rod is connected and fixed to the anode through the hole structure.

[0025] According to some embodiments of the present invention, the included angle between the anode rod and the extending direction of the wave structure is ≤10°. If the extending direction of the wave in the anode active component is changed, for example, when the extending direction of the wave is perpendicular to the anode rod, the deep plating ability will be significantly reduced.

[0026] According to some embodiments of the present invention, the material of the anode rod includes at least one of stainless steel, titanium, and copper. For example, specifically, it can be a copper bar wrapped with a titanium layer.

[0027] According to some embodiments of the present invention, the anode rod has a cylindrical or prismatic structure.

[0028] According to some embodiments of the present invention, the number of the sub-active components is any integer value between 2 and 10. For example, specifically, it can be 3, 4, or 5. In the subsequent description, the sub-active components are described as the first sub-active component to the Nth sub-active component; the corresponding divided gaps, conductive components, and sub-structures of the conductive components are all named in the first to Nth manner. And the first to Nth do not represent the order, but are only for distinguishing between the same type of components and for convenient expression.

[0029] According to some embodiments of the present invention, in the wave structure, the wavelength is 3 to 150 mm. For example, specifically, it can be about 3.5 mm, 5 mm, 6 mm, 8 mm, 10 mm, 15 mm, 30 mm, 35 mm, 40 mm, 45 mm, 50 mm, 60 mm, 65 mm, 70 mm, 75 mm, 80 mm, 90 mm, 100 mm, 110 mm, 120 mm, 130 mm, or about 140 mm.

[0030] According to some embodiments of the present invention, in the wave structure, the wave height is 1 to 15 mm. For example, specifically, it can be about 1.5 mm, 2 mm, 2.5 mm, 3 mm, 5 mm, 10 mm, 11 mm, 12 mm, 12.5 mm, 13 mm, 13.5 mm, or 14 mm.

[0031] According to some embodiments of the present invention, the waviness of the wave structure is 10% to 35%. The waviness is the ratio of the wave height to the wavelength.

[0032] According to some embodiments of the present invention, the waviness of the wave structure is 20% to 33%. For example, specifically, it can be about 30%.

[0033] According to some embodiments of the present invention, the included angle between the extending direction of the wave in the wave structure and the anode rod is ≤5°. Further specifically, the extending direction is parallel to the anode rod.

[0034] According to some embodiments of the present invention, the wave structure is a wave structure with double-sided protrusions. It has no positive or negative sides during use.

[0035] According to some embodiments of the present invention, the wavy structure is a unidirectional convex wavy structure. During use, the convex wave shape faces the cathode. Compared with the bidirectional convex wavy structure, the unidirectional convex wavy structure has more waveforms facing the cathode and better copper plating effect; and if it is a bidirectional convex wavy structure, the convex part in the direction away from the cathode will cancel out the convex part towards the cathode.

[0036] According to some embodiments of the present invention, a hollow grid (which can also be described as a mesh structure) is provided on the anodic active component. Thereby, the specific surface area of the anodic active component can be increased, and the contact area between the anodic active component and the bath solution can be significantly increased during use.

[0037] According to some embodiments of the present invention, the hollow grid is a parallelogram.

[0038] According to some embodiments of the present invention, the size of the parallelogram is (2.5~3.5) mm × (5.5~6.5) mm. For example, it can specifically be about 3.5 mm × 6 mm. This size is the size of the two diagonals of the parallelogram.

[0039] According to some embodiments of the present invention, in the anodic active component, the line width for dividing the hollow grid is (0.8~1.2) mm × (0.8~1.2) mm; for example, it can specifically be about 1 mm × 1 mm.

[0040] According to some embodiments of the present invention, the anodic active component includes a titanium-based substrate and an iridium tantalum coating provided on the surface of the titanium-based substrate. Thereby, the insolubility of the anode is improved, the production capacity of the electrolysis equipment including the anode is improved, waste of copper is avoided, and cost is saved.

[0041] According to some embodiments of the present invention, the material of the titanium-based substrate is at least one of titanium or titanium alloy.

[0042] According to some embodiments of the present invention, the thickness of the titanium-based substrate is 1~2 mm.

[0043] According to some embodiments of the present invention, the thickness of the iridium tantalum coating is 0.1~3 μm. For example, it can specifically be about 0.5 μm or about 1 μm.

[0044] According to some embodiments of the present invention, the composition of the iridium tantalum coating includes iridium dioxide and tantalum pentoxide.

[0045] According to some embodiments of the present invention, the anodic active component further includes an intermediate layer provided between the titanium-based substrate and the iridium tantalum coating.

[0046] According to some embodiments of the present invention, the intermediate layer includes at least one of a titanium layer, a titanium tantalum layer, and a titanium zirconium layer. Thus, on the one hand, the adhesion between the titanium-based substrate and the iridium tantalum coating is increased. On the other hand, if the iridium tantalum coating fails and needs to be polished and recoated, the intermediate layer also plays a role in protecting the titanium-based substrate, significantly prolonging the service life of the anode active component and reducing the cost of the anode active component.

[0047] According to some embodiments of the present invention, the thickness of the intermediate layer is 0.1 - 2 μm. For example, it can specifically be about 0.15 μm, 0.3 μm, 0.5 μm, or about 1 μm.

[0048] Overall, due to the design of the structure and material of the anode provided by the present invention, it has both deep plating ability and durability, and is particularly suitable for continuous production using an auxiliary tank for dissolving copper oxide powder + insoluble anode pulse or an auxiliary tank for dissolving pure copper insoluble anode pulse; it can not only improve production efficiency, but also enhance the deep plating ability, further saving copper consumption and reducing production costs.

[0049] According to an embodiment of the second aspect of the present invention, a method for preparing the anode is provided, and the preparation method includes the following steps: providing the sub-active component and connecting the sub-active component and the conductive component.

[0050] Since the preparation method adopts all the technical solutions of the anode of the above embodiments, it has at least all the beneficial effects brought by the technical solutions of the above embodiments.

[0051] In addition, the preparation method is simple to operate, easy to implement, and convenient for large-scale industrial promotion.

[0052] According to some embodiments of the present invention, the sub-active component is obtained by: bending the semi-finished product of the anode active component, setting the wave structure; and dividing it to form the corresponding sub-active component.

[0053] According to some embodiments of the present invention, the setting of the semi-finished product includes setting a hollow grid and fixing holes on a titanium-based substrate with a planar structure.

[0054] According to some embodiments of the present invention, the method for obtaining the sub-active component further includes dry sandblasting and cleaning the obtained component after the bending. Among them, the dry sandblasting uses a cast iron G120 specification.

[0055] According to some embodiments of the present invention, the cleaning includes heating acid water washing, where the temperature is 85±5°C. The acid water used for the acid water washing is a sulfuric acid aqueous solution, and the mass concentration of the sulfuric acid aqueous solution is 5-15%; for example, it can be specifically about 5% or about 10%. The speed of the cleaning is 2.5m / min±0.2m / min. The cleaning further includes drying after the heating acid water washing. The temperature of the drying is 85°C±5°C.

[0056] According to some embodiments of the present invention, the method for obtaining the sub-active component further includes setting an iridium tantalum coating before the splitting.

[0057] According to some embodiments of the present invention, the method for setting the iridium tantalum coating includes coating a dispersion liquid containing an iridium tantalum mixture on the surface of the semi-finished product and sintering.

[0058] According to some embodiments of the present invention, the dispersoid of the dispersion liquid includes soluble iridium salt and soluble tantalum salt. Wherein the molar ratio of iridium atoms to tantalum atoms is 6.5~7.5:3. For example, it can be specifically about 7:3. The sum of the concentrations of iridium salt and tantalum salt in the dispersion liquid is 0.001~0.01mol / L. For example, it can be specifically about 0.003 mol / L, or about 0.005 mol / L.

[0059] According to some embodiments of the present invention, the dispersant of the dispersion liquid includes at least one of isopropanol and n-butanol. Further, the dispersant includes isopropanol and n-butanol. Wherein the mass ratio of isopropanol to n-butanol is 1.5~2.5:1. For example, it can be specifically about 2:1.

[0060] According to some embodiments of the present invention, the number of repetitions of the coating and sintering is ≥5 times. In actual production, the number of repetitions is based on the required thickness of the iridium tantalum coating. For example, it can be specifically 10 times, 15 times or 20 times.

[0061] According to some embodiments of the present invention, the sintering temperature of the iridium tantalum coating is 450-650°C. For example, it can be specifically about 550°C.

[0062] According to some embodiments of the present invention, the sintering duration of the iridium tantalum coating is 10~30min. For example, it can be specifically about 15min, 20min, 25min.

[0063] According to some embodiments of the present invention, the preparation method further includes setting the intermediate layer before setting the iridium tantalum coating.

[0064] According to some embodiments of the present invention, the method for setting the intermediate layer includes magnetron sputtering.

[0065] According to some embodiments of the present invention, when the intermediate layer is a titanium tantalum layer, the target used for magnetron sputtering is a titanium tantalum target. The mass ratio of titanium to tantalum is 2.0 - 3:1. For example, it can specifically be about 2.3:1, 63:27, or about 2.5:1.

[0066] According to some embodiments of the present invention, the vacuum degree of the magnetron sputtering is 1.0 - 1.5×10 -2 Pa. For example, it can specifically be about 1.25×10 -2 Pa.

[0067] According to some embodiments of the present invention, the temperature of the magnetron sputtering is 450 - 500 °C.

[0068] According to some embodiments of the present invention, the magnetron sputtering is carried out in a protective atmosphere. The protective atmosphere includes at least one of argon and nitrogen; for example, it can specifically be a mixture formed by nitrogen and argon in a volume ratio of 3:42 - 48. Further specifically, the volume ratio of nitrogen to argon is about 3:45.

[0069] According to some embodiments of the present invention, the flow rate of the protective atmosphere is 25 - 35 SCCM.

[0070] According to some embodiments of the present invention, the power of the magnetron sputtering is 280 - 480 W.

[0071] According to some embodiments of the present invention, the duration of the magnetron sputtering is 15 - 20 min. The thickness of the alloy sputtered is controlled within 0.1 - 2 μm. For example, it can specifically be about 0.15 μm.

[0072] According to some embodiments of the present invention, the preparation method further includes assembly.

[0073] The assembly includes fixing and assembling a plurality of the sub-active components through the anode rod and the hole structure.

[0074] According to an embodiment of the third aspect of the present invention, an electrolysis device is provided. The electrolysis device includes: An electrolytic cell; An electrolytic solution, which is arranged inside the electrolytic cell; The anode provided by the embodiment of the first aspect of the present invention; the anode is fixed on the wall of the electrolytic cell, and at least part of the anode active component is immersed in the electrolytic solution; A cathode, at least part of which is immersed in the electrolytic solution and is arranged opposite to the anode.

[0075] Since the electrolysis device adopts all the technical solutions of the anode in the above embodiment, it has at least all the beneficial effects brought by the technical solutions of the above embodiment. That is, the PCB board electroplated by the electrolysis device has good deep plating ability.

[0076] According to some embodiments of the present invention, the area ratio of the anode to the cathode is 1.5-2:1. This area ratio is the area ratio of a single anode to a single cathode.

[0077] According to an embodiment of the fourth aspect of the present invention, a method for electroplating a PCB board using the electrolysis device is provided.

[0078] Since the method adopts all the technical solutions of the electroplating device in the above embodiment, it has at least all the beneficial effects brought by the technical solutions of the above embodiment.

[0079] According to some embodiments of the present invention, in the electroplating, the electrolytic solution satisfies at least one of the following parameters: (1) Copper sulfate 230-250 g / L; (2) Sulfuric acid 40-60 g / L; (3) Chloride ion 50-90 ppm; (4) Temperature 20-25 °C.

[0080] According to some embodiments of the present invention, the electrolytic solution further includes a copper plating additive. The type and addition amount of the copper plating additive are adjusted according to needs and are not strictly limited here.

[0081] According to some embodiments of the present invention, in the electroplating, the current density is 100-400 A / m 2 .

[0082] Unless otherwise specified, the "about" in the present invention actually means that the allowable error is within the range of ±2%. For example, about 100 is actually 100 ± 2% × 100.

[0083] Unless otherwise specified, the "between... and..." in the present invention includes the numbers. For example, "between 2 and 3" includes the end values 2 and 3.

[0084] Other features and advantages of the present invention will be described in the subsequent specification, and some of them will become obvious from the specification or can be understood by implementing the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0085] The above and / or additional aspects and advantages of the present invention will become obvious and easy to understand from the description of the embodiments in conjunction with the following drawings, wherein: Figure 1 is a schematic structural diagram of the anode provided in Embodiment 1 of the present invention.

[0086] Figure 2 It is a schematic diagram of the size of the anode provided in Embodiment 1 of the present invention, with the unit being mm.

[0087] Figure 3 It is a schematic diagram of the size of the anode provided in Embodiment 1 of the present invention, with the unit being mm.

[0088] Figure 4 is Figure 2 a schematic diagram of the size of the mesh holes on the anode active component in [reference], with the unit being mm.

[0089] Figure 5 It is a top view of the anode provided in Embodiment 1 of the present invention.

[0090] Figure 6 It is a schematic structural diagram of the electrolysis device in the application example of the present invention.

[0091] Figure 7 It is a schematic structural diagram of the cathode used in the application example of the present invention.

[0092] Figure 8 It is a schematic diagram of the calculation parameters of the deep plating ability TP in the test example of the present invention.

[0093] Reference numerals: The first sub-active component 110, the second sub-active component 120, the third sub-active component 130; the extending direction 140 of the wave structure, the first segmentation gap 150, the second segmentation gap 160; The first conductive component 210, the second conductive component 220, the third conductive component 230; The first terminal 211, the second terminal 221, the third terminal 231; The first frame structure 212, the second frame structure 222, the third frame structure 232; The cathode 200; the BGA area 240; The electrolytic cell 300. Detailed implementation manners

[0094] The embodiments of the present invention will be described in detail below. The examples of the embodiments are shown in the drawings, where the same or similar reference numerals represent the same or similar elements or elements with the same or similar functions from beginning to end. The embodiments described below with reference to the drawings are exemplary and are only used to explain the present invention and should not be construed as a limitation to the present invention.

[0095] In the description of the present invention, it should be understood that for the orientation description, such as the orientation or positional relationship indicated by up, down, front, back, left, right, etc., it is based on the orientation or positional relationship shown in the drawings. It is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, it should not be construed as a limitation to the present invention.

[0096] In the description of the present invention, unless otherwise clearly defined, terms such as setting, installation, connection, etc. should be understood in a broad sense. Those skilled in the art can reasonably determine the specific meanings of the above terms in the present invention in combination with the specific content of the technical solution.

[0097] Example 1 Reference Figures 1 - 5 , this example provides an anode with a three-dimensional structure, which consists of the following components: Anode active component; the anode active component has a wavy structure and is composed of three segments: the first sub-active component 110, the second sub-active component 120, and the third sub-active component 130; between the above three segments, a first segmentation gap 150 and a second segmentation gap 160 are formed; Conductive component; it is composed of a first conductive component 210, a second conductive component 220, and a third conductive component 230; The first conductive component 210 is composed of an L-shaped first terminal 211 and a first frame structure 212 which are connected and arranged; the first frame structure 212 and the third sub-active component 130 are fixed and electrically connected; the first terminal 211 is provided with a hole structure; The second conductive component 220 is composed of an L-shaped second terminal 221 and a second frame structure 222 which are connected and arranged; the second frame structure 222 and the second sub-active component 120 are fixed and electrically connected; the second terminal 221 is provided with a hole structure; The third conductive component 230 is composed of an L-shaped third terminal 231 and a third frame structure 232 which are connected and arranged; the third frame structure 232 and the first sub-active component 110 are fixed and electrically connected. The third terminal 231 is provided with a hole structure; The material of the conductive component is titanium.

[0098] The shapes of the first segmentation gap 150 and the second segmentation gap 160 are the same, both are linear, and are not parallel to the extending direction 140 of the wavy structure.

[0099] Among them, the anodic active component includes a titanium substrate (made of pure titanium, 2 mm thick) and an intermediate layer and an iridium tantalum coating that successively cover the surface of the titanium substrate; the intermediate layer is a titanium tantalum layer (atomic ratio, titanium: tantalum = 73:27), with a thickness of 0.1 - 0.15 μm (the thickness is almost the same at different positions, but fluctuations within this range are acceptable); the thickness of the iridium tantalum layer is 0.1 - 0.3 μm (the thickness is almost the same at different positions, but fluctuations within this range are acceptable, and the thickness in this example is about 1 μm), and the active components are iridium dioxide and tantalum pentoxide, and the atomic ratio of iridium to tantalum is about 7:3. The width of the anodic active component is 339 mm (the extended length of the wavy structure), and the length is 1096 mm.

[0100] It can be understood that in the anodic active component, the wave height H of the wavy structure is about 11 mm, the wavelength L is about 33 mm, and the waviness H / L is about 33%.

[0101] It can be understood that on the anodic active component, there is a hollow grid with a size of 3.5 mm × 6 mm and a parallelogram shape, and the line width for dividing the hollow grid is 1.0 mm.

[0102] It can be understood that the first sub-active component 110 is trapezoidal, and the lengths of the two parallel sides are 200 mm and 300 mm respectively; The second sub-active component 120 is parallelogram-shaped, and the side length perpendicular to the extending direction 140 of the wavy structure is 5751 mm; The third sub-active component 130 is trapezoidal, and the lengths of the two parallel sides are 200 mm and 300 mm respectively.

[0103] It can be understood that the conductive component is composed of a sheet-like structure with a thickness of about 5 mm and a width of about 30 mm; in the L-shaped terminal, the length of the short side is about 25 mm.

[0104] It can be understood that the first terminal 211, the second terminal 221, and the third terminal 231 protrude equidistantly and parallelly from one side of the anodic active structure; the distance between adjacent two terminals is 52.5 mm; the protruding length is 120 mm.

[0105] It can be understood that the diameter of the hole structure on each terminal is 11 mm.

[0106] It can be understood that the first dividing gap 150 and the second dividing gap 160 are parallel and have the same shape, and the included angle with the extending direction 140 of the wavy structure is 25°.

[0107] It should be noted that in actual production, except for the wavy structure and layer structure of the anodic active component, other dimensions are not strictly restricted and can be adjusted according to requirements.

[0108] Example 2 In this example, the anode provided in Example 1 was prepared. The specific steps were as follows: D1. A hollow grid and fixing holes were set on the titanium substrate, and it was bent to form the waviness required in Example 1. The instrument used for bending was a fully automatic bending machine.

[0109] D2. Dry sandblasting, cleaning, and magnetron sputtering were used to set an intermediate layer on the surface of the component obtained in step D1. Among them, The sand used for dry sandblasting was cast iron of G120 specification.

[0110] During the cleaning process, it passed through the cleaning line at a running speed of 2.5 m / min ± 0.2 m / min. During the cleaning process, the temperature was about 85°C, the concentration of the pickling sulfuric acid solution was about 10%, and the drying temperature was 85°C ± 5°C.

[0111] During the magnetron sputtering process, a titanium tantalum target was used. The magnetron sputtering process parameters were as follows: at a vacuum degree of 1.25×10 -2 Pa, the component obtained by cleaning was preheated to 180°C, the flow rate of the protective atmosphere was controlled at 35 SCCM, and the sputtering power of the target was controlled at 280 W. In the protective atmosphere, N2:Ar = 3:45, the sputtering power was 280 W, and the sputtering time was 20 min. In the titanium tantalum target used, the mass ratio of titanium to tantalum was about 63:27.

[0112] D3. An iridium tantalum coating was set: Chloroiridic acid and tantalum pentachloride were mixed in a ratio of iridium:tantalum = 7:3 (molar ratio), dissolved in a mixed solvent formed by isopropyl alcohol:n-butyl alcohol = 2:1 (volume ratio). The sum of the concentrations of iridium salt and tantalum salt in the obtained solution was 0.005 mol / L. After stirring evenly, it was coated on the surface of the component obtained in step D2 and then sintered; the coating method included spraying. The sintering temperature was about 550°C, and the duration was 10 - 30 min (about 20 min in this example). In this example, the spraying-sintering step was repeated 15 times to ensure that the thickness of the iridium tantalum coating was about 1 μm.

[0113] D4. The structure obtained in step D3 was segmented according to the dimensions in Example 1 to obtain the first sub-active component 110, the second sub-active component 120, and the third sub-active component 130; D4. Connection: Reference Figure 1 , the first sub-active component 110, the second sub-active component 120, and the third sub-active component 130; as well as the first conductive component 210, the second conductive component 220, and the third conductive component 230 were connected respectively.

[0114] D4. Assembly. Through the hole structure, the three components obtained in step D4 and the anode rod were connected to complete the assembly.

[0115] In actual production, referring to the structures provided by the anode active components in Patent 2024116028000 and 2024102019097, they can all be combined with the segmented power supply structure provided in the present invention; and further optimized results can be obtained.

[0116] Comparative Example 1 In this example, an anode with a three-dimensional structure was prepared. The specific structure was different from that of Example 1 in that: The anode active component was not segmented, referring to the structure in Example 1 of 2024116028000.

[0117] Application Example 1 Refer to Figure 6 , in this example, an electrolysis device was provided. The specific structure was as follows: Electrolytic cell 300; Electrolyte, which was arranged inside the electrolytic cell 300; Anode; in the anode, the anode rod was fixed on the wall of the electrolytic cell 300 and connected to the first sub-active component 110, the second sub-active component 120, and the third sub-active component 130 through a hole structure; at least a part of the above three sub-active components was immersed in the electrolyte; the anode in this example was from the above examples or comparative examples.

[0118] Cathode 200, at least a part of the cathode 200 was immersed in the electrolyte and was arranged opposite to the anode. The specific structure of the cathode 200 used in this example was as Figure 7 shown. The width of the cathode 200 was 420 mm, the length was 510 mm, and the thickness was 3 mm. Among them, the cathode 200 included BGA regions 240 and other regions; the BGA regions 240 were distributed at the four corners and the center of the cathode 200; the length and width of each BGA region 240 were 96 mm, and the distance between the BGA regions 240 arranged at the four corners and the cathode 200 was about 22 mm; further, it could be understood that dense holes (also called small hole arrays) were distributed within the BGA regions 240, and holes were also distributed in other regions, but the density of the holes was lower than the distribution density of the dense holes.

[0119] It can be understood that since the area of the cathode 200 was significantly smaller than that of the anode; in actual production, only some of the sub-active components could be powered to achieve the matching of the working areas of the cathode 200 and the anode, and avoid the phenomenon of uneven copper plating thickness under the condition of serious mismatch between the anode and the cathode sizes.

[0120] Furthermore, it can be understood that there were two anodes, which were respectively arranged on both sides of the cathode 200.

[0121] Application Example 2 In this example, electroplating was carried out using the electrolysis device obtained in Application Example 1. Specifically: During electroplating, the electrolyte should meet the following parameters: (1) Copper sulfate: 240 g / L; (2) Sulfuric acid: 50 g / L; (3) Chloride ions: 70 ppm; (4) Temperature: 20 - 25 °C.

[0122] During the electrolysis process, the copper ions in the electrolyte will be consumed. Therefore, cupric oxide powder needs to be added to maintain the copper ion content. The above parameters are for the start-up, and there will be certain changes during electrolysis, but it does not affect the performance.

[0123] The current density is controlled at 150 A / m 2 .

[0124] The thickness of the test board (i.e., the cathode 200 used in Application Example 1) is 3.0 mm, the minimum hole diameter is 0.2 mm, and the aspect ratio is 3 / 0.2 = 15:1. Each group conducts electroplating on 50 test boards, and the average value is finally taken.

[0125] Test Example In this example, the deep plating ability (TP value) of the holes at the BGA position in the test board after electroplating in Application Example 2 was counted, and the average TP value was calculated. The calculation formula for the TP value is: ; Among them, 1 - 6 are the thicknesses of the hole copper plated at the indicated positions through the electroplating process, and a - d are the thicknesses of the surface copper plated at the indicated positions through the electroplating process (the unit should be the same as the hole copper thickness). The positions indicated by each number are as Figure 8 shown.

[0126] This example also calculated the range of the surface copper thickness of the test board, that is, the difference between the thickest thickness and the thinnest thickness, and multiple test boards were taken to calculate the average value.

[0127] The results are shown in Table 1.

[0128] Table 1 Anode parameters and TP value results of the holes at the BGA position in the examples and comparative examples

[0129] The results in Table 1 show that compared with the traditional one-piece anode, the anode provided by the present invention significantly improves the current and voltage uniformity through segmented power supply, and thus significantly improves the electroplating effect.

[0130] The embodiments of the present invention have been described in detail above with reference to the accompanying drawings. However, the present invention is not limited to the above embodiments, and various changes can be made without departing from the spirit of the present invention within the scope of knowledge possessed by those of ordinary skill in the relevant art. In addition, the embodiments of the present invention and the features in the embodiments can be combined with each other without conflict.

Claims

1. A three-dimensional anode, characterized in that The anode includes: An anode active component; the anode active component has a wavy structure and is composed of at least two sub-active components; a segmentation gap is provided between adjacent two sub-active components; A conductive component; each sub-active component is separately connected to a conductive component.

2. The anode according to claim 1, wherein The shape of the segmentation gap is linear.

3. The anode according to claim 2, wherein The included angle between the extending direction of the wavy structure and the extending direction of the segmentation gap is θ, and 0° ≤ θ < 90°.

4. The anode according to claim 1, wherein The shape of the segmentation gap is an irregular shape.

5. The anode according to claim 1, wherein The conductive component includes a terminal and a frame structure which are connected and arranged; the frame structure is fixed on the sub-active component.

6. The anode according to claim 5, characterized in that, A hole structure is provided on the terminal.

7. The anode according to any one of claims 1 to 6, characterized in that The number of the sub-active components is any integer value between 2 and 10.

8. A method for preparing an anode according to any one of claims 1 to 7, characterized in that, The preparation method includes the following steps: providing the sub-active components and connecting the sub-active components to the conductive components.

9. An electrolysis device, characterized in that, The electrolysis device includes: An electrolytic cell; An electrolytic solution, which is arranged inside the electrolytic cell; The anode as described in any one of claims 1 to 7; the anode is fixed on the wall of the electrolytic cell, and at least part of the anode active component is immersed in the electrolytic solution; A cathode, at least part of which is immersed in the electrolytic solution and is arranged opposite to the anode.

10. A method for electroplating a PCB board by using the electrolysis device as described in claim 9.

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