Atomic manipulation construction method of artificial quantum structure on two-dimensional layered material substrate

Abstract

The invention discloses an atom manipulation construction method of an artificial quantum structure on a two-dimensional layered material substrate, which comprises the following steps of: under an ultrahigh vacuum condition, evaporating and depositing noble metal atoms and non-metal atoms on the surface of a two-dimensional layered material by a molecular beam epitaxy method, and applying a voltage pulse through a tip of a scanning tunneling microscope to construct the artificial quantum structure on the two-dimensional layered material substrate. The method comprises the following steps: accurately lifting and placing monodisperse noble metal atoms, applying a voltage pulse through a tip of a scanning tunneling microscope, accurately placing a single non-metal atom near the noble metal atoms, accurately lifting and placing the single noble metal atom and the non-metal atom for multiple times, and carrying out N-type and P-type doping. And construction of an atomic-scale precise artificial quantum structure is realized. According to the method, accurate positioning, lifting, carrying, placing and other operations of the monatomic on the surface of the two-dimensional layered material are carried out, the problems of controllable control and structure construction of the monatomic on the surface of the two-dimensional layered material are solved, preparation of the diatomic PN junction is achieved, and a feasible scheme is provided for accurate design of quantum devices with atomic scales.

Description

Technical Field

[0001] The present invention belongs to the field of atomic manufacturing and relates to a method for constructing artificial quantum structures on a two-dimensional layered material substrate by atomic manipulation. Background Art

[0002] The atomic manipulation technology of scanning tunneling microscopy realizes operations such as precise positioning, picking up, placing, and transporting at the single-atom level through the lateral and longitudinal manipulation methods of the scanning tunneling microscopy tip. Atomic-scale precision quantum devices manufactured based on the atomic manipulation of scanning tunneling microscopy and single-atom etching technology are expected to further miniaturize electronic devices, increase the working frequency, reduce energy consumption, and significantly increase the information storage capacity, thereby promoting the development of the information field.

[0003] In recent years, scanning tunneling microscopy has realized the lateral and longitudinal manipulation of different atoms or inorganic small molecules on the surfaces of substrates such as metals, semiconductors, and oxide ultrathin films, and constructed some artificial quantum lattices with special physical properties, providing a new platform for the regulation and research of quantum states, etc., and also providing a new method for the construction of artificial quantum structures and quantum devices. Due to its ultra-high carrier mobility, strong stability, and excellent electrical and thermal conductivity, two-dimensional layered materials have important advantages in the semiconductor industrial manufacturing. However, since the van der Waals surface of the two-dimensional layered substrate is not a close-packed surface, some metal atoms will leak into the substrate interior and it is difficult to stably adsorb on the surface, and single atoms such as C and H will form covalent bonds on the surface of two-dimensional layered materials and it is difficult to pick them up again. Therefore, the controllable manipulation and structure construction of atomic-scale precise artificial quantum structures on the surface of two-dimensional layered materials are still a difficult problem.

[0004] In view of this, the present invention proposes a method for constructing artificial quantum structures on a two-dimensional layered material substrate by atomic manipulation to solve the above problems. Summary of the Invention

[0005] To solve the above-mentioned defects in the prior art, the purpose of the present invention is to provide a method for constructing artificial quantum structures on a two-dimensional layered material substrate by atomic manipulation. Under ultra-high vacuum conditions, an appropriate amount of noble metal and non-metal atoms are evaporated on the surface of the two-dimensional layered material by molecular beam epitaxy, and voltage pulses are applied by the scanning tunneling microscopy tip to achieve precise picking up and placing of single atoms. By precisely manipulating the positions of single atoms multiple times, the construction of atomic-scale precise artificial quantum structures on this surface can be achieved.

[0006] The present invention is realized by the following technical solutions.

[0007] One aspect of the present invention provides a method for constructing artificial quantum structures on a two-dimensional layered material substrate by atomic manipulation, including:

[0008] A two-dimensional layered material substrate with an atomically clean surface is selected, and two electrodes are pre-buried at the bottom of the two-dimensional layered material;

[0009] Monodisperse noble metal atoms and non-metal atoms are deposited on the surface of two-dimensional layered materials by molecular beam epitaxy.

[0010] Use the tip of a scanning tunneling microscope to scan the surface of a two-dimensional layered material to obtain a surface topography map and the position of the manipulated atoms;

[0011] Based on the obtained manipulated atomic position, a single noble metal atom is precisely lifted by applying a pulse voltage using the scanning tunneling microscope tip; the tip is placed on top of the target position, and a single noble metal atom is precisely placed by applying a pulse voltage through the tip;

[0012] The scanning tunneling microscope needle tip is used to apply a pulse voltage to longitudinally manipulate and lift a single non-metal atom. The needle tip moves to the top of the manipulated non-metal atom, and the non-metal atom is precisely placed near the noble metal atom by applying a pulse voltage to the needle tip.

[0013] The lifting and placing process of single noble metal atoms and non-metal atoms is repeated many times. When noble metal atoms are adsorbed on the substrate surface, it is N-type doping; when non-metal atoms are adsorbed on the substrate surface, it is P-type doping, thus realizing the construction of atomic-level precise artificial quantum structures.

[0014] Preferably, the two-dimensional layered material includes graphene, hexagonal boron nitride, silicene and transition metal chalcogenides, wherein the transition metal chalcogenides are MX2, M=V, Mo, W; X=Se, Te, S.

[0015] Preferably, the noble metal element includes Au, Pt or Pd; and the non-metal element includes Te, Se or As.

[0016] Preferably, the overall coverage of the deposited monodisperse noble metal atoms and monodisperse non-metal atoms on the surface of the two-dimensional layered material is 0.01-0.05 ML.

[0017] Preferably, the scanning tunneling microscope and its tip work in an environment with a temperature not higher than 4K and a pressure not higher than 10 -7 Pa ultra-high vacuum clean environment.

[0018] As a preferred method, a pulse voltage method is used to lift a single noble metal atom and a non-metal atom, with a pulse interval of 1 to 2 seconds, and the needle tip height is lowered. A +3 to +5V pulse voltage is applied to the needle tip.

[0019] As a preferred method, a pulse voltage method is used to place a single noble metal atom and a non-metal atom, and the pulse time is 1 to 2 seconds, and the needle tip height is reduced. A pulse voltage of -3 to -5 V is applied to the tip of the needle.

[0020] Preferably, the distance between the non-metal atom and the noble metal atom is 3 to 10 times the surface unit cell spacing.

[0021] Another aspect of the present invention provides an artificial quantum structure on a two-dimensional layered material substrate prepared by the above method.

[0022] Due to the above technical solutions adopted by the present invention, it has the following beneficial effects:

[0023] 1. The atomic manipulation construction method of the artificial quantum structure on the two-dimensional layered material substrate provided by the present invention deposits monodisperse atoms by MBE (molecular beam epitaxy) method, and manipulates atoms on the two-dimensional layered material substrate based on the longitudinal manipulation of atoms by applying a pulsed voltage, solving the problem of single-atom-level precise manipulation of a kind of atoms on the surface of two-dimensional layered materials, and providing key technical support for precisely constructing artificial quantum structures on the surface of two-dimensional layered materials.

[0024] 2. The two-atom quantum device formed by a single noble metal atom and a non-metal atom on the surface of the two-dimensional layered material according to the present invention can be designed with atomic-level precision, providing an achievable method for low-power and small-size devices.

[0025] The present invention innovatively explores the atomic manipulation construction method of artificial quantum structures on two-dimensional layered material substrates. The method of the present invention is advanced, the physical principle is clear, it has high reliability and future development potential, and provides an effective implementation approach for realizing atomic manipulation of a kind of atoms on two-dimensional layered material substrates and realizing two-atom pn junction quantum devices. Description of the Drawings

[0026] The drawings described herein are used to provide a further understanding of the present invention, form a part of this application, and do not constitute an improper limitation of the present invention. In the drawings:

[0027] Figure 1 It is a partially enlarged schematic view of the manipulation of adsorbed atoms on the surface of a two-dimensional layered material substrate by the tip of a scanning tunneling microscope W;

[0028] Figures 2(a)-(g) are the technological processes for longitudinal manipulation of noble metal and non-metal atoms adsorbed on the surface of a two-dimensional layered material substrate with single-atom precision;

[0029] Figure 3 It is a schematic diagram of a two-atom quantum device that can be realized by precise doping;

[0030] Figure 4 It is a high-resolution scanning tunneling microscope topographic image of adsorbed Te atoms on a graphene substrate in Example 1;

[0031] Figure 5 This is a scanning tunneling microscope topography image before longitudinal manipulation of Te atoms on a graphene substrate in Example 1;

[0032] Figure 6 This is a scanning tunneling microscope morphology image of Example 1 after Te atoms are lifted on a graphene substrate by longitudinal manipulation;

[0033] Figure 7 This is a scanning tunneling microscope morphology image of Example 1 after Te atoms are placed at the target position on the graphene substrate through longitudinal manipulation. DETAILED DESCRIPTION

[0034] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments. The exemplary embodiments and descriptions of the present invention are used to explain the present invention but are not intended to limit the present invention.

[0035] like Figure 1 As shown, the embodiment of the present invention provides a method for atomic manipulation and atomic-level structure construction on the surface of a two-dimensional layered material, and the specific steps are as follows:

[0036] Step 1: Select a two-dimensional layered material substrate with an atomically clean surface. The two-dimensional layered material substrate includes graphene, hexagonal boron nitride (h-BN), silicene and transition metal chalcogenides. The transition metal chalcogenides are MX2 (M = V, Mo, W; X = Se, Te, S). Two electrodes are pre-buried at the bottom of the two-dimensional layered material, and transport measurements can be performed on the doped two-dimensional layered material, as shown in Figure 2(a).

[0037] Step 2: Deposit monodisperse noble metal atoms on the surface of the two-dimensional layered material by molecular beam epitaxy, the noble metal atoms include Au, Pt and Pd. The deposited monodisperse noble metal atoms are randomly distributed on the surface of the two-dimensional layered material substrate, and the coverage on the substrate surface is 0.01 to 0.05 ML (monolayer), as shown in Figure 2(b).

[0038] Step 3, depositing monodisperse non-metallic atoms on the surface of the two-dimensional layered material by molecular beam epitaxy, the non-metallic atoms including Te, Se and As. The deposited monodisperse non-metallic atoms are randomly distributed on the surface of the two-dimensional layered material substrate, and the coverage on the substrate surface is 0.01 to 0.05 ML (monolayer), as shown in Figure 2(c).

[0039] Step 4: Use the tip of a scanning tunneling microscope to scan the surface of the two-dimensional layered material to obtain a surface morphology map and obtain the positions of the noble metal atoms and non-metal atoms on the surface of the two-dimensional layered substrate. The tip of the scanning tunneling microscope is an electrochemically etched tungsten tip. The working environment of the scanning tunneling microscope and its tip is an ultra-high vacuum: the temperature is below 4K and the pressure is above 10 -7 Below Pa.

[0040] Step 5: Using the method of applying pulse voltage, the tungsten needle tip of the scanning tunneling microscope is used to longitudinally manipulate and lift a single noble metal atom. The pulse voltage parameter is a pulse time of 1 to 2 seconds, and the needle tip height is lowered. A pulse voltage of +3 to +5 V is applied to the needle tip, as shown in Figure 2(d).

[0041] Step 6: Place the single noble metal atom lifted above by applying a pulse voltage, and move the needle tip to the top of the target position for placing the noble metal atom, so as to achieve accurate placement of the target position, as shown in Figure 2(e). The pulse voltage parameters are pulse time 1 to 2 seconds, and the needle tip height decreases by A pulse voltage of -3 to -5 V is applied to the needle tip.

[0042] Step 7, by applying a pulse voltage, the tungsten needle tip of the scanning tunneling microscope is moved to the top of the manipulated non-metal atom, and a single non-metal atom is lifted longitudinally, as shown in Figure 2(f). The parameters are pulse time 1 to 2 seconds, needle tip height decrease A +3 to +5V pulse voltage is applied to the needle tip.

[0043] Step 8: Place the single non-metal atom lifted above by applying a pulse voltage. Move the needle tip to the top of the non-metal atom placement position and place the non-metal atom precisely near the noble metal atom. The distance between the two atoms is 3 to 10 times the surface cell spacing. See Figure 2(g). The parameters are pulse time 1 to 2 seconds, needle tip height drop A pulse voltage of -3 to -5 V is applied to the needle tip.

[0044] The precise transport of single atoms is a repeatable process that can be performed multiple times.

[0045] The manipulated atoms are stably adsorbed on the surface of the two-dimensional layered material, and can be doped through charge transfer. When noble metal atoms are adsorbed on the substrate surface, the substrate locally gains electrons, which is N-type doping; when non-metallic atoms are adsorbed on the substrate surface, the substrate locally loses electrons, which is P-type doping. Double-atom quantum devices can be realized. Figure 3 There are no dangling bonds on the surface of two-dimensional layered materials, and the deposited monodisperse atoms and the surface of two-dimensional layered materials conform to physical adsorption with weak interactions.

[0046] Through the two electrodes pre-buried at the bottom of the two-dimensional layered material, transport measurements of the doped two-dimensional layered material can be performed.

[0047] The preparation of the quantum dot device of the present invention is further illustrated below through different embodiments.

[0048] Example 1

[0049] 1) Select the two-dimensional layered material graphene with an atomically clean surface as the substrate, and embed two electrodes at the bottom of the two-dimensional layered material.

[0050] 2) Deposit monodisperse noble metal Pd atoms on the surface of the graphene substrate by molecular beam epitaxy. The deposited monodisperse noble metal Pd atoms are randomly distributed on the surface of the graphene substrate, and the coverage on the substrate surface is 0.05 ML (monolayer).

[0051] 3) Deposit monodisperse non-metal Te atoms on the surface of the graphene substrate by molecular beam epitaxy. The deposited monodisperse non-metal Te atoms are randomly distributed on the surface of the graphene substrate, and the coverage on the substrate surface is 0.03 ML (monolayer). The monodisperse non-metal Te atoms deposited on the graphene surface are shown in Figure 4 .

[0052] 4) Use the tungsten tip of a scanning tunneling microscope to scan the surface of the graphene substrate to obtain the positions of Pd atoms and Te atoms on the surface of the graphene substrate, as shown in Figure 5 . The working environment temperature of the scanning tunneling microscope is 4K, and the pressure is 10 -7 Pa.

[0053] 5) Use the tungsten tip of a scanning tunneling microscope to longitudinally manipulate and lift a single noble metal Pd atom. By applying a pulsed voltage, the pulse time is 1.3 s, and the tip height drops The tip applies a pulsed voltage of 3.7V.

[0054] 6) By applying a pulsed voltage, place the lifted single noble metal Pd atom. The tip moves to the top of the target position for placing the noble metal Pd atom to achieve the precise placement of the noble metal Pd atom at the target position. The pulse time is 1.6 s, and the tip height drops The tip applies a pulsed voltage of -3.1V.

[0055] 7) Use the tungsten tip of a scanning tunneling microscope to longitudinally manipulate and lift a single non-metal Te atom. By applying a pulsed voltage, the tip moves to the top of the non-metal Te atom to be manipulated. The pulse time is 1 s, and the tip height drops The tip applies a pulsed voltage of 4V, as shown in Figure 6 .

[0056] 8) By applying a pulsed voltage, place the lifted single non-metal Te atom. Precisely place the non-metal Te atom near the noble metal Pd atom, and the distance between the two atoms is 4 times the surface unit cell spacing, as shown in Figure 7 . The pulse time is 1 s, and the tip height drops The tip applies a pulsed voltage of -4.4V.

[0057] When the precious metal atom Pd is adsorbed on the substrate surface, it is N-type doping; when the non-metallic atom Te is adsorbed on the substrate surface, it is P-type doping. The adsorption of Pd and Te atoms on the substrate surface forms a diatomic pn junction device.

[0058] The diatomic pn junction device formed by the adsorption of Pd and Te atoms on the surface of the graphene substrate is measured through two electrodes pre-buried at the bottom of the two-dimensional layered material.

[0059] Example 2

[0060] 1) Hexagonal boron nitride, a two-dimensional layered material with an atomically clean surface, is selected as the substrate, and two electrodes are pre-buried at the bottom of the two-dimensional layered material.

[0061] 2) Depositing monodisperse noble metal Pt atoms on the surface of the hexagonal boron nitride substrate by molecular beam epitaxy. The deposited monodisperse noble metal Pt atoms are randomly distributed on the surface of the hexagonal boron nitride substrate, and the coverage on the substrate surface is 0.02 ML (monolayer).

[0062] 3) Depositing monodisperse non-metallic As atoms on the surface of the hexagonal boron nitride substrate by molecular beam epitaxy. The deposited monodisperse non-metallic As atoms are randomly distributed on the surface of the hexagonal boron nitride substrate, and the coverage on the substrate surface is 0.02 ML (monolayer).

[0063] 4) Use the tungsten tip of a scanning tunneling microscope to scan the surface of the hexagonal boron nitride substrate to obtain the surface morphology and the positions of the Pt and As atoms on the surface of the hexagonal boron nitride substrate. The working environment temperature of the scanning tunneling microscope and its tip is 3.5K and the pressure is 10 -6 Pa.

[0064] 5) Use the scanning tunneling microscope tungsten needle tip to longitudinally manipulate and lift a single noble metal Pt atom. The pulse voltage is applied with a pulse time of 1.2s, and the needle tip height is lowered. A 3.3V pulse voltage is applied to the needle tip.

[0065] 6) The single noble metal Pt atom lifted above is placed by applying a pulse voltage, and the needle tip moves to the top of the target position for placing the noble metal Pt atom, achieving accurate placement of the target position of the noble metal Pt atom. The pulse time is 1.1s, and the needle tip height drops A -3.5V pulse voltage was applied to the needle tip.

[0066] 7) Use the scanning tunneling microscope tungsten needle tip to longitudinally manipulate and lift a single non-metallic As atom. By applying a pulse voltage, the needle tip moves to the top of the manipulated As atom. The pulse time is 1.7s, and the needle tip height decreases. A 4.1V pulse voltage was applied to the needle tip.

[0067] 8) The above-mentioned single non-metallic As atom is placed by applying a pulse voltage, and the non-metallic As atom is precisely placed near the noble metal Pt atom, with the distance between the two atoms being 6 times the surface cell spacing. The pulse time is 1.5s, and the needle tip height is reduced. A -4.6V pulse voltage was applied to the needle tip.

[0068] When noble metal atoms Pt are adsorbed on the substrate surface, it is N-type doping; when non-metallic atoms As are adsorbed on the substrate surface, it is P-type doping. The adsorption of Pt and As atoms on the substrate surface forms a diatomic pn junction device.

[0069] The diatomic pn junction device formed by the adsorption of Pt and As atoms on the surface of the hexagonal boron nitride substrate is measured through two electrodes pre-buried at the bottom of the two-dimensional layered material.

[0070] Example 3

[0071] 1) Silicene, a two-dimensional layered material with an atomically clean surface, is selected as the substrate, and two electrodes are pre-buried at the bottom of the two-dimensional layered material.

[0072] 2) Monodisperse noble metal Au atoms are deposited on the surface of the silicene substrate by molecular beam epitaxy. The deposited monodisperse Au atoms are randomly distributed on the surface of the silicene substrate, and the coverage on the substrate surface is 0.01 ML (monolayer).

[0073] 3) Monodisperse non-metallic Se atoms are deposited on the surface of the silicene substrate by molecular beam epitaxy. The deposited monodisperse non-metallic Se atoms are randomly distributed on the surface of the silicene substrate, and the coverage on the substrate surface is 0.05 ML (monolayer).

[0074] 4) Use the tungsten tip of a scanning tunneling microscope to scan the surface of the silicene substrate to obtain the surface morphology and the positions of Au and Se atoms on the surface of the silicene substrate. The working environment temperature of the scanning tunneling microscope and its tip is 3K and the pressure is 8×10 - 8 Pa.

[0075] 5) Use the scanning tunneling microscope tungsten needle tip to perform longitudinal manipulation to lift a single noble metal Au atom. The method of applying a pulse voltage with a pulse time of 1 s is adopted to reduce the needle tip height. A 5V pulse voltage is applied to the needle tip.

[0076] 6) The single noble metal Au atom lifted above is placed by applying a pulse voltage, and the needle tip moves to the top of the target position for placing the noble metal Au atom, achieving accurate placement of the target position of the noble metal Au atom. The pulse time is 1.4s, and the needle tip height drops A -4.3V pulse voltage is applied to the needle tip.

[0077] 7) Using a tungsten tip of a scanning tunneling microscope, a single non-metallic Se atom is longitudinally manipulated and lifted. By applying a pulsed voltage, the tip is moved to the top of the non-metallic Se atom to be manipulated. The pulse time is 1.5 s, and the tip height drops A pulsed voltage of 3.2 V is applied to the tip.

[0078] 8) By applying a pulsed voltage, the above-mentioned lifted single non-metallic Se atom is placed. The tip is moved to the top of the position where the non-metallic Se atom is to be placed, and the non-metallic Se atom is precisely placed near a noble metal Au atom. The distance between the two atoms is 8 times the surface unit cell spacing. The pulse time is 1.8 s, and the tip height drops A pulsed voltage of -3.7 V is applied to the tip.

[0079] When noble metal atoms Au are adsorbed on the substrate surface, the substrate locally gains electrons and is N-type doped; when non-metallic atoms Se are adsorbed on the substrate surface, the substrate locally loses electrons and is P-type doped. A two-atom pn junction device is formed by adsorbing Au and Se atoms on the substrate surface.

[0080] The two-atom pn junction device formed by adsorbing Au and Se atoms on the surface of the silicene substrate is measured through two electrodes pre-embedded at the bottom of the two-dimensional layered material.

[0081] Example 4

[0082] 1) A two-dimensional layered material MoS2 with an atomically clean surface is selected as the substrate, and two electrodes are pre-embedded at the bottom of the two-dimensional layered material.

[0083] 2) Monodisperse noble metal Pt atoms are deposited on the surface of the MoS2 substrate by molecular beam epitaxy. The deposited monodisperse Pt atoms are randomly distributed on the surface of the MoS2 substrate, and the coverage on the substrate surface is 0.03 ML (monolayer).

[0084] 3) Monodisperse non-metallic Se atoms are deposited on the surface of the MoS2 substrate by molecular beam epitaxy. The deposited monodisperse non-metallic Se atoms are randomly distributed on the surface of the MoS2 substrate, and the coverage on the substrate surface is 0.01 ML (monolayer).

[0085] 4) Using a tungsten tip of a scanning tunneling microscope to scan the surface of the MoS2 substrate, a surface topography map is obtained, and the positions of Pt atoms and Se atoms on the surface of the MoS2 substrate are obtained. The working environment temperature of the scanning tunneling microscope and its tip is 3.8 K, and the pressure is 10 -7 Pa.

[0086] 5) Use the scanning tunneling microscope tungsten needle tip to longitudinally manipulate and lift a single noble metal Pt atom. The pulse voltage is applied with a pulse time of 1.8s, and the needle tip height is lowered. A 3.3V pulse voltage is applied to the needle tip.

[0087] 6) The single noble metal Pt atom lifted above is placed by applying a pulse voltage, and the needle tip moves to the top of the target position for placing the noble metal Pt atom, achieving accurate placement of the target position of the noble metal Pt atom. The pulse time is 1.8s, and the needle tip height drops A -4.6V pulse voltage was applied to the needle tip.

[0088] 7) Use the scanning tunneling microscope tungsten needle tip to longitudinally manipulate and lift a single non-metallic Se atom. By applying a pulse voltage, the needle tip moves to the top of the manipulated non-metallic Se atom. The pulse time is 1.5s, and the needle tip height decreases. A 3.2V pulse voltage was applied to the needle tip.

[0089] 8) The single non-metallic Se atom lifted above is placed by applying a pulse voltage, and the needle tip moves to the top of the position where the Se atom is placed, and the non-metallic Se atom is accurately placed near the precious metal Pt atom, with the distance between the two atoms being 7 times the surface cell spacing. The pulse time is 1.7s, and the needle tip height decreases A -3.2V pulse voltage is applied to the needle tip.

[0090] When the substrate surface adsorbs precious metal atoms Pt, the substrate partially gains electrons, which is N-type doping; when the substrate surface adsorbs non-metallic atoms Se, the substrate partially loses electrons, which is P-type doping. The adsorption of Pt and Se atoms on the substrate surface forms a diatomic pn junction device.

[0091] The diatomic pn junction device formed by the adsorption of Pt and Se atoms on the surface of the MoS2 substrate is measured through two electrodes pre-buried at the bottom of the two-dimensional layered material.

[0092] The device is a two-atom quantum device that can be precisely designed at the atomic level, providing a feasible method for miniaturization, low power consumption and high working efficiency of electronic devices.

[0093] The present invention is not limited to the above-mentioned embodiments. On the basis of the technical solution disclosed in the present invention, technicians in this field can make some substitutions and deformations to some technical features therein according to the disclosed technical content without creative labor, and these substitutions and deformations are all within the protection scope of the present invention.

Claims

1. An atomic manipulation construction method for artificial quantum structures on a two-dimensional layered material substrate, characterized in that include: A two-dimensional layered material substrate with an atomically clean surface is selected, and two electrodes are pre-buried at the bottom of the two-dimensional layered material; Monodisperse noble metal atoms and non-metal atoms are deposited on the surface of two-dimensional layered materials by molecular beam epitaxy. Use the tip of a scanning tunneling microscope to scan the surface of a two-dimensional layered material to obtain a surface topography map and the position of the manipulated atoms; Based on the obtained manipulated atomic position, a pulse voltage is applied using the tip of a scanning tunneling microscope to precisely lift a single noble metal atom; The needle tip is placed on top of the target location and a pulse voltage is applied through the needle tip to precisely place a single noble metal atom; The scanning tunneling microscope needle tip is used to apply a pulse voltage to longitudinally manipulate and lift a single non-metal atom. The needle tip moves to the top of the manipulated non-metal atom, and the non-metal atom is precisely placed near the noble metal atom by applying a pulse voltage to the needle tip. The lifting and placing process of single noble metal atoms and non-metal atoms is performed repeatedly. When noble metal atoms are adsorbed on the substrate surface, it is N-type doping. When non-metallic atoms are adsorbed on the substrate surface, it is P-type doping, which enables the construction of atomic-level precise artificial quantum structures.

2. The method for constructing an artificial quantum structure on a two-dimensional layered material substrate by atomic manipulation according to claim 1, characterized in that The two-dimensional layered materials include graphene, hexagonal boron nitride, silicene and transition metal chalcogenides, wherein the transition metal chalcogenides are MX2, M=V, Mo, W; X=Se, Te, S.

3. The atomic manipulation construction method of artificial quantum structures on a two-dimensional layered material substrate according to claim 1, characterized in that The noble metal elements include Au, Pt or Pd; the non-metal elements include Te, Se or As.

4. The method for constructing an artificial quantum structure on a two-dimensional layered material substrate by atomic manipulation according to claim 1, characterized in that The overall coverage of deposited monodisperse noble metal atoms and monodisperse non-metal atoms on the surface of the two-dimensional layered material is 0.01 to 0.05 ML.

5. The method for constructing an artificial quantum structure on a two-dimensional layered material substrate by atomic manipulation according to claim 1, characterized in that The working environment of the scanning tunneling microscope and its tip is an ultra-high vacuum clean environment with a temperature not higher than 4K and a pressure not higher than 10 -7 Pa.

6. The method for constructing an atomic manipulation of an artificial quantum structure on a two-dimensional layered material substrate according to claim 1, characterized in that, Single precious metal atoms and non-metal atoms are lifted by applying a pulsed voltage method with a pulse time of 1 - 2 s and the tip height is decreased A pulsed voltage of +3 to +5 V is applied to the tip.

7. The method for constructing an artificial quantum structure on a two-dimensional layered material substrate by atomic manipulation according to claim 1, wherein Placing a single noble metal atom and a non-metal atom uses the method of applying a pulsed voltage. The pulse time is 1 - 2 s, and the tip height decreases. A pulsed voltage of -3 to -5 V is applied to the tip.

8. The method for constructing an artificial quantum structure on a two-dimensional layered material substrate by atomic manipulation according to claim 1, wherein, The interatomic distance between non-metal atoms and noble metal atoms is 3 to 10 times the surface cell spacing.

9. An artificial quantum structure on a two-dimensional layered material substrate prepared by the method according to any one of claims 1 to 8.

10. An application of the method for atomic manipulation construction of artificial quantum structures on a two-dimensional layered material substrate as described in any one of claims 1 to 8 in the preparation of atomic-level precision quantum devices.

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