Four-end laminated solar cell based on ultra-wide-band-gap perovskite and preparation method of four-end laminated solar cell

Abstract

The invention discloses a four-end laminated solar cell based on ultra-wide-band-gap perovskite and a preparation method of the four-end laminated solar cell. The four-end laminated solar cell based on the ultra-wide-band-gap perovskite comprises a top cell and a bottom cell, wherein the top cell is an ultra-wide-band-gap perovskite solar cell of which the band gap is not less than 2.0 eV. According to the invention, the problem of low utilization rate of the bottom cell in the existing perovskite-based four-terminal laminated cell can be solved, and the overall photoelectric conversion efficiency of the solar cell can be synergistically improved. According to the invention, the band gap characteristic of the ultra-wide band gap perovskite solar cell is used, and high-energy photons are fully absorbed and utilized to generate high open-circuit voltage; meanwhile, the light absorption of the bottom cell can be enhanced, and the photoelectric conversion efficiency of the bottom cell is effectively exerted; in addition, the damage of ultraviolet rays to the performance of the bottom cell is avoided. Therefore, the efficiency and the stability of the solar cell can be synergistically improved, and the application prospect is good.

Description

Technical Field

[0001] The present invention relates to the technical field of solar cells, and particularly relates to a four-terminal tandem solar cell based on ultra-wide bandgap perovskite and a preparation method thereof. Background Art

[0002] In recent years, the global energy system has been facing the dual challenges of climate change and fossil energy shortage. Developing efficient and stable renewable energy technologies has become a strategic priority. Among various clean energies, solar energy has become the core direction of energy transformation due to its advantages of rich resources and mature technology. Among them, crystalline silicon solar cells have formed a complete industrial system after decades of development. According to the data of the International Roadmap for Photovoltaic Technology, its global market share exceeds 90%. Although the highest certified efficiency of current commercial monocrystalline silicon solar cells has reached 27.3%, limited by the Shockley-Queisser theoretical limit (29.1% for single-junction silicon cells), traditional silicon-based technologies have faced bottlenecks in efficiency improvement.

[0003] Under this background, novel perovskite photovoltaic materials, due to their adjustable bandgap (1.3 - 2.3 eV) and solution processability, provide a new path to break through the existing technical bottlenecks. Based on the spectral management theory, by constructing a tandem architecture of wide-narrow bandgap materials, segmented absorption optimization of the solar spectrum can be achieved. The most common tandem architectures are two-terminal and four-terminal tandems. However, considering the actual operating efficiency, stability, and maintenance convenience of the devices, the four-terminal tandem is more advantageous and thus has greater industrial application prospects. Through S-Q theory calculation, it is found that when the bandgap of the perovskite top cell is in the range of 1.7 - 1.8 eV, the theoretical efficiency of the four-terminal tandem system can reach 46%, and efficiencies exceeding 40% can be achieved within the bandgap range of 1.4 - 2.2 eV. However, existing four-terminal tandem systems generally use perovskite components with a bandgap less than 1.7 eV. For example, the invention patent application "Wide Bandgap Perovskite Solar Cell and Tandem Solar Cell" (Publication No. CN117998956A) and the invention patent application "A Perovskite / Silicon Four-Terminal Tandem Solar Cell and Its Preparation Method and Application" (Publication No. CN119156034A) both use perovskite materials within this bandgap range. In this spectral distribution mode, the silicon-based devices of the battery can only utilize a small amount of incident photons and contribute a small part of the efficiency (30% - 40%), failing to fully exert the potential of mature photovoltaic technologies such as crystalline silicon. Moreover, the current perovskite tandem solar cell technology based on conventional bandgaps has the following technical defects: the selection of the bandgap of the perovskite top cell overly focuses on the theoretical extreme value, ignoring the limitations of material stability and process compatibility in industrial implementation; the traditional four-terminal tandem design does not establish a dynamic optimization model for bandgap-spectrum matching, resulting in low photon distribution efficiency; existing conventional bandgap perovskite materials have inherent defects such as phase separation and ion migration, affecting the reliability of the devices. Summary of the Invention

[0004] The present invention provides a four-terminal tandem solar cell based on perovskite with an ultra-wide bandgap (bandgap ≥ 2.0 eV) and a preparation method thereof.

[0005] The present invention uses an ultra-wide bandgap perovskite solar cell as the top cell, aiming to solve the problem of low utilization rate of the bottom cell in existing perovskite-based four-terminal tandem cells and synergistically improve the overall photoelectric conversion efficiency of the solar cell.

[0006] The present invention uses the bandgap characteristics of the ultra-wide bandgap perovskite solar cell to fully absorb and utilize high-energy photons to generate a high open-circuit voltage; at the same time, it can enhance the light absorption of the bottom cell and effectively exert the photoelectric conversion efficiency of the bottom cell; in addition, it avoids the damage to the performance of the bottom cell caused by ultraviolet rays. Therefore, it can synergistically improve the efficiency and stability of the solar cell and has good application prospects.

[0007] The specific technical solutions are as follows:

[0008] [1] A four-terminal tandem solar cell based on perovskite with an ultra-wide bandgap, comprising a top cell and a bottom cell, wherein the top cell is an ultra-wide bandgap perovskite solar cell with a bandgap not lower than 2.0 eV.

[0009] The ultra-wide bandgap perovskite solar cell can be a normal structure or an inverted structure.

[0010] The normal structure includes a conductive base layer, an electron transport layer, a perovskite layer, a passivation layer, a hole transport layer, and a transparent electrode layer stacked in sequence from top to bottom.

[0011] The inverted structure includes a conductive base layer, a hole transport layer, a perovskite layer, a passivation layer, an electron transport layer, and a transparent electrode layer stacked in sequence from top to bottom.

[0012] The thickness of the perovskite layer can be 20 - 10000 nm, such as 150 nm, 200 nm, 210 nm, 220 nm, 250 nm, 300 nm, 400 nm, 500 nm, 600 nm, 700 nm, 800 nm, 900 nm, 1000 nm, 2000 nm, 5000 nm, 8000 nm, etc.

[0013] The perovskite layer can be an ultra-wide bandgap perovskite material ABX3 type perovskite with a bandgap greater than or equal to 2.0 eV, wherein the A site is one or a mixture of cesium ions, methylammonium cations, and formamidinium cations, the B site is one or a mixture of lead ions and tin ions, and the X site is one or a mixture of iodide ions, bromide ions, and chloride ions. In some preferred examples, the chemical expression of the perovskite layer in atomic ratio is FA x Cs 1-xPbBr3, where FA represents the formamidinium cation, and 0.9 ≤ x ≤ 1.0. Pure bromide-based perovskites have both a suitable bandgap and can solve the phase separation problem faced by mixed halogens in conventional wide bandgaps. FAPbBr3 has a long carrier diffusion length, and the incorporation of a small amount of Cs helps to adjust the lattice parameters, optimize the crystal structure, and suppress harmful lattice distortions, thereby enhancing the stability of the perovskite phase. Further preferably, FA x Cs 1-x In FAPbBr3, 0.9 ≤ x < 1.0. For example, x can be 0.91, 0.92, 0.93, 0.94, 0.95, 0.96, 0.97, 0.98, 0.99, etc. In a preferred example, x = 0.95.

[0014] The thickness of the passivation layer can be 1 - 50 nm.

[0015] In a preferred example, the passivation layer includes a bimolecular passivation layer of 4-F-PEABr (4-fluorophenethylammonium bromide, CAS No.: 1807536-06-6) and EDA (ethylenediamine). Further, the bimolecular passivation layer includes a bilayer structure of a 4-F-PEABr layer and an EDA layer. Furthermore, in the ultra-wide bandgap perovskite solar cell, the perovskite layer, the 4-F-PEABr layer, and the EDA layer are sequentially stacked from top to bottom.

[0016] The thickness of the electron transport layer can be 2 - 100 nm.

[0017] The electron transport layer may include at least one of fullerene derivative PCBM, C 60 、SnO2、ZnO、BCP (CAS No.: 4733-39-5). The fullerene derivative PCBM may further include PC 61 BM (CAS No.: 160848-22-6), PC 71 BM (CAS No.: 609771-63-3). In a preferred example, the electron transport layer is a structure of two or more layers, including a PC 61 BM layer and a BCP layer, or a PC 61 BM layer and a SnO2 layer. Further, in the ultra-wide bandgap perovskite solar cell, the BCP layer or the SnO2 layer is closer to the transparent electrode layer than the PC 61 BM layer. The SnO2 layer can play a protective role to avoid damage to the existing structure during the preparation process (such as magnetron sputtering, etc.) of the transparent electrode layer.

[0018] The thickness of the hole transport layer can be 2 - 100 nm.

[0019] The hole transport layer may include at least one of nickel oxide, self-assembled monolayers SAMs, and PTAA (CAS No.: 1333317-99-9). The self-assembled monolayers SAMs may include at least one of 2PACZ (CAS No.: 20999-38-6), MeO-2PACZ (CAS No.: 2377770-18-6), 4PACZ (CAS No.: 20999-36-4), Me-4PACZ (CAS No.: 2747959-96-0), etc.

[0020] The thickness of the transparent electrode layer may be 2 - 200 nm.

[0021] The transparent electrode layer may include at least one of gold, silver, copper, ITO (indium tin oxide), IZO (indium zinc oxide), IWO (indium tungsten oxide), and FTO (fluorine-doped tin oxide).

[0022] The thickness of the conductive base layer may be 100 - 10,000,000 nm.

[0023] The bottom cell may include one or a combination of crystalline silicon solar cells, cadmium telluride solar cells, copper indium gallium selenide solar cells, copper indium tin sulfide solar cells, and perovskite solar cells.

[0024] The ultra-wide bandgap perovskite solar cell used in the present invention includes a design and preparation technology for constructing a perovskite top cell structure with optimized bandgap gradient, and simultaneously designs and optimizes material component development and new interface passivation technology, thereby overcoming its instability and non-radiative recombination loss problems, effectively improving the efficiency contribution ratio of bottom cells such as crystalline silicon with a relatively high industrial maturity and the photoelectric conversion efficiency of the tandem cell, overcoming the attenuation of cells such as crystalline silicon under high-energy photon irradiation, and having good application prospects.

[0025] [2] The preparation method of the four-terminal tandem solar cell based on ultra-wide bandgap perovskite according to [1] includes:

[0026] Preparing an ultra-wide bandgap perovskite solar cell: preparing an electron transport layer or a hole-electron layer on the conductive base layer, preparing a perovskite layer on the electron transport layer or the hole-electron layer, preparing a passivation layer on the perovskite layer, preparing a hole transport layer or an electron transport layer on the passivation layer, and preparing a transparent electrode layer on the hole transport layer or the electron transport layer;

[0027] Covering the side of the ultra-wide bandgap perovskite solar cell plated with the transparent electrode layer on the surface of the bottom cell to obtain the four-terminal tandem solar cell based on ultra-wide bandgap perovskite.

[0028] The present invention does not have special requirements for the preparation methods of each layer, and the required layer structures can be obtained by adjusting the conventional parameter conditions according to the prior art.

[0029] The preparation method of the electron transport layer may include at least one of pulsed laser deposition, magnetron sputtering, slot coating method, blade coating method, spraying method, screen printing, and spin coating.

[0030] The preparation method of the perovskite layer may include a one-step method or a two-step method, and the preparation process includes at least one of a vacuum method, a slot coating method, a blade coating method, a spraying method, screen printing, and spin coating.

[0031] The preparation method of the passivation layer may include at least one of pulsed laser deposition, magnetron sputtering, slot coating method, blade coating method, spraying method, screen printing, and spin coating.

[0032] The preparation method of the hole transport layer may include at least one of pulsed laser deposition, magnetron sputtering, slot coating method, blade coating method, spraying method, screen printing, and spin coating.

[0033] The preparation method of the transparent electrode layer may include at least one of vacuum evaporation, magnetron sputtering, and screen printing.

[0034] Compared with the prior art, the present invention has the following beneficial effects:

[0035] The present invention uses an ultra-wide bandgap perovskite solar cell as the top cell. By optimizing the bandgap, a large number of photons within the absorption range of the silicon cell can be transmitted, which can significantly improve the utilization rate of the silicon cell, is beneficial to increasing the power of the tandem cell, suppressing the attenuation caused by high-energy photons, improving the overall stability of the device, and has good application prospects.

[0036] By using a novel bimolecular interface passivation, the present invention greatly reduces the non-radiative recombination of the device, improves the efficiency and stability of the ultra-wide bandgap perovskite solar cell and the tandem cell, and has good application prospects. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] Figure 1 Schematic diagrams of the structures of the ultra-wide bandgap perovskite solar cell (left figure) in Example 1 and the ultra-wide bandgap semi-transparent perovskite / silicon four-terminal tandem solar cell (right) in Example 2.

[0038] Figure 2 Voltage-light intensity dependence diagrams of the ultra-wide bandgap perovskite solar cell devices prepared in Comparative Examples 1-3 and Example 1, where: con corresponds to Comparative Example 1, F-PEABr corresponds to Comparative Example 2, EDA corresponds to Comparative Example 3, and DP corresponds to Example 1.

[0039] Figure 3Dark current curve diagrams of the ultra-wide bandgap perovskite solar cell devices prepared in Comparative Examples 1-3 and Example 1. In the figure: control corresponds to Comparative Example 1, F-PEABr corresponds to Comparative Example 2, EDA corresponds to Comparative Example 3, and DP corresponds to Example 1.

[0040] Figure 4 Current density-voltage relationship curve diagrams of the ultra-wide bandgap perovskite solar cell devices prepared in Comparative Examples 1-3 and Example 1. In the figure: control corresponds to Comparative Example 1, F-PEABr corresponds to Comparative Example 2, EDA corresponds to Comparative Example 3, and DP corresponds to Example 1.

[0041] Figure 5 Current density-voltage relationship curve diagrams of the ultra-wide bandgap perovskite / silicon four-terminal tandem solar cell prepared in Example 2, including the ultra-wide bandgap semi-transparent perovskite top cell, the crystalline silicon bottom cell after perovskite light filtering, and a commercial crystalline silicon cell. Detailed implementation manners

[0042] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments. It should be understood that these embodiments are only used to illustrate the present invention and not to limit the scope of the present invention. The operating methods without specific conditions noted in the following embodiments are usually carried out under conventional conditions or according to the conditions recommended by the manufacturer.

[0043] Example 1:

[0044] (1) Clean the conductive glass ITO in an ultrasonic bath in the order of deionized water, glass cleaner, deionized water, and ethanol for 20 min, and then dry it at 80 °C for later use.

[0045] (2) Prepare a hole and electron layer on the conductive base layer. Treat the conductive glass substrate obtained in (1) by plasma cleaning for 1 min, and then immediately transfer it into a glove box filled with N2. Spin-coat the self-assembled molecule 2PACZ (0.5 mg / mL, solvent ethanol) on the conductive substrate at a speed of 4000 rpm for 30 s, and anneal it at 100 °C for 10 min. Obtain the hole transport layer.

[0046] (3) Fabricate a perovskite layer on the hole-electron layer. Dissolve 117.8 mg of FABr (CAS No.: 146958-06-7), 10.6 mg of CsBr, and 367 mg of PbBr2 in 1 mL of a mixed solvent of DMF (N,N-dimethylformamide) and DMSO (dimethyl sulfoxide) with a volume ratio of 4:1 to form a 1.0 M stoichiometric solution, thus obtaining a perovskite precursor solution. Spin-coat 50 μL of the perovskite precursor solution at 4000 rpm for 20 s, quickly dropwise add 150 μL of the antisolvent chlorobenzene within 10 s, then transfer the perovskite precursor film to a hot plate and anneal it at 100 °C for 20 min in a glove box. Obtain a perovskite layer with a thickness of 210 nm.

[0047] (4) Fabricate a bimolecular passivation layer on the perovskite layer. Spin-coat a 4-F-PEABr solution (1 mg / mL dissolved in isopropanol) on the surface of the perovskite film at 5000 rpm for 30 s, and anneal it at 100 °C for 10 min in a glove box; then spin-coat an EDA solution (solvent toluene, volume ratio of EDA in the solution 1:100000) on the surface of the perovskite film at 5000 rpm for 30 s, and anneal it at 100 °C for 10 min in a glove box. Obtain a bimolecular passivation layer.

[0048] (5) Fabricate an electron transport layer on the passivation layer. Spin-coat a PC 61 BM solution (20 mg / mL dissolved in chlorobenzene) on the surface of the perovskite film at 2000 rpm for 20 s, and anneal it at 70 °C for 5 min in a glove box. Subsequently, spin-coat a BCP solution (0.5 mg / mL, solvent ethanol) on the surface of the perovskite film at 5000 rpm for 20 s, and anneal it at 70 °C for 5 min in a glove box to obtain a composite electron transport layer.

[0049] (6) Finally, fabricate a transparent electrode layer on the electron transport layer. Deposit 100 nm of ITO by vacuum deposition at 1×10 -4 Pa to obtain a transparent electrode, completing the fabrication of the ultra-wide bandgap semi-transparent perovskite solar cell. The device structure is as shown in the left figure of Figure 1 .

[0050] Under the illumination of AM1.5G simulated sunlight with an illumination intensity of 100 mw / cm 2 , test the current-voltage curve of the device in Example 1, and obtain an open-circuit voltage (Voc) of 1.61 V, a short-circuit current density (Jsc) of 7.51 mA / cm 2 , a fill factor (FF) of 81.60%, and a power conversion efficiency (PCE) of 9.88%. Figure 4 The DP in

[0051] Comparative Example 1:

[0052] The difference from Example 1 is only that there is no bimolecular passivation layer, that is, the electron transport layer is directly prepared on the perovskite layer, and the rest are the same, obtaining an ultra-wide bandgap perovskite solar cell.

[0053] Under the illumination of AM1.5G simulated sunlight with an intensity of 100 mw / cm 2 , the current-voltage curve of the device of Comparative Example 1 was tested, and the open-circuit voltage (Voc) was 1.41 V, the short-circuit current density (Jsc) was 6.17 mA / cm 2 , the fill factor (FF) was 70.65%, and the power conversion efficiency (PCE) was 6.14%. Figure 4 The control in

[0054] Comparative Example 2:

[0055] The difference from Example 1 is only that the bimolecular passivation layer is replaced by a single-molecule passivation layer of 4-F-PEABr layer, that is, only a single-molecule passivation layer of 4-F-PEABr layer is prepared on the perovskite layer, and there is no EDA layer, and the rest are the same, obtaining an ultra-wide bandgap perovskite solar cell.

[0056] Under the illumination of AM1.5G simulated sunlight with an intensity of 100 mw / cm 2 , the current-voltage curve of the device of Comparative Example 2 was tested, and the open-circuit voltage (Voc) was 1.47 V, the short-circuit current density (Jsc) was 7.31 mA / cm 2 , the fill factor (FF) was 73.07%, and the power conversion efficiency (PCE) was 7.88%. Figure 4 The F-PEABr in

[0057] Comparative Example 3:

[0058] The difference from Example 1 is only that the bimolecular passivation layer is replaced by a single-molecule passivation layer of EDA layer, that is, only a single-molecule passivation layer of EDA layer is prepared on the perovskite layer, and there is no 4-F-PEABr layer, and the rest are the same, obtaining an ultra-wide bandgap perovskite solar cell.

[0059] Under the illumination of AM1.5G simulated sunlight with an intensity of 100 mw / cm 2 , the current-voltage curve of the device of Comparative Example 3 was tested, and the open-circuit voltage (Voc) was 1.49 V, the short-circuit current density (Jsc) was 7.26 mA / cm 2 , the fill factor (FF) was 78.86%, and the power conversion efficiency (PCE) was 8.54%. Figure 4 The EDA in

[0060] As can be seen from Figure 2 and Figure 3 , after using the bimolecular passivator in Example 1, the ultra-wide bandgap perovskite device has smaller leakage current and defect density, and finally the device efficiency reaches 9.88%.

[0061] Example 2:

[0062] (1)-(4) are the same as those in Example 1.

[0063] (5) Prepare the electron transport layer on the passivation layer. Spin-coat the PC 61 BM solution (10 mg / mL dissolved in chlorobenzene) on the surface of the perovskite film at a speed of 2000 rpm for 20 s, and anneal at 70 °C for 5 min in the glove box. Subsequently, deposit 10 nm of SnO2 by atomic layer deposition (ALD) to obtain a composite electron transport layer.

[0064] (6) Prepare the transparent electrode layer on the electron transport layer. Magnetron sputter 50 nm of ITO in a mixed gas environment of oxygen and argon (volume ratio 5:95) with a pressure of 0.5 Pa. Obtain the transparent electrode and complete the preparation of the semi-transparent perovskite solar cell.

[0065] (7) Finally, cover the side of the semi-transparent perovskite device prepared in (6) with the transparent electrode layer on the silicon cell to obtain a perovskite / silicon four-terminal stacked solar cell, and the device structure is as shown in the right figure of Figure 1 .

[0066] Figure 5 are the current density-voltage curves of the ultra-wide bandgap semi-transparent perovskite top cell (Perovskite), the silicon bottom cell (Filtered-Si) after perovskite light filtering, and the commercial silicon cell in the ultra-wide bandgap perovskite / silicon four-terminal stacked solar cell prepared in Example 2. Among them, the efficiency of the ultra-wide bandgap semi-transparent perovskite device top cell is 9.00%, the efficiency of the commercial silicon cell is 19.00%, and the efficiency of the silicon cell after being filtered by the ultra-wide bandgap semi-transparent perovskite device is 14.38%. The utilization rate of the silicon cell in the device of Example 2 reaches 61.5%. It can be seen that the present invention greatly improves the utilization rate of the bottom silicon cell by using the ultra-wide bandgap perovskite as the top cell of the four-terminal stacked (4T) cell, and has good application prospects.

[0067] In addition, it should be understood that after reading the above description of the present invention, those skilled in the art can make various changes or modifications to the present invention, and these equivalent forms also fall within the scope defined by the appended claims of this application.

Claims

1. A four-terminal tandem solar cell based on ultra-wide bandgap perovskite, comprising a top cell and a bottom cell, characterized in that, The top cell is an ultra-wide bandgap perovskite solar cell with a bandgap of not less than 2.0 eV.

2. The four-terminal tandem solar cell based on ultra-wide bandgap perovskite according to claim 1, wherein The ultra-wide bandgap perovskite solar cell is in a normal structure or an inverted structure; The normal structure includes a conductive base layer, an electron transport layer, a perovskite layer, a passivation layer, a hole transport layer, and a transparent electrode layer that are sequentially stacked from top to bottom; The inverted structure includes a conductive base layer, a hole transport layer, a perovskite layer, a passivation layer, an electron transport layer, and a transparent electrode layer that are sequentially stacked from top to bottom.

3. The four-terminal stacked solar cell based on ultra-wide bandgap perovskite according to claim 2, wherein, The thickness of the perovskite layer is 20 - 10,000 nm; The perovskite layer is an ultra-wide bandgap perovskite material ABX3 perovskite with a bandgap greater than or equal to 2.0 eV, where the A site is one or more mixtures of cesium ions, methylammonium cations, and formamidinium cations, the B site is one or more mixtures of lead ions and tin ions, and the X site is one or more mixtures of iodide ions, bromide ions, and chloride ions; Preferably, the chemical formula of the perovskite layer in terms of atomic ratio is FA x Cs 1-x PbBr3, where FA represents formamidinium cation, 0.9 ≤ x ≤ 1.0, more preferably 0.9 ≤ x < 1.0, and even more preferably x = 0.

95.

4. The four-terminal stacked solar cell based on ultra-wide bandgap perovskite according to claim 2, characterized in that, The thickness of the passivation layer is 1 - 50 nm; The passivation layer includes a bimolecular passivation layer of 4-F-PEABr and EDA; The bimolecular passivation layer includes a bilayer structure of a 4-F-PEABr layer and an EDA layer; In the ultra-wide bandgap perovskite solar cell, the perovskite layer, the 4-F-PEABr layer, and the EDA layer are sequentially stacked from top to bottom.

5. The four-terminal tandem solar cell based on ultra-wide bandgap perovskite according to claim 2, characterized in that, The thickness of the electron transport layer is 2 - 100 nm; The electron transport layer includes at least one of fullerene derivative PCBM, C 60 , SnO2, ZnO, and BCP; The fullerene derivative PCBM includes at least one of PC 61 BM and PC 71 BM; Preferably, the electron transport layer is a structure of two or more layers, including a PC 61 BM layer and a BCP layer, or a PC 61 BM layer and a SnO2 layer; Further preferably, in the ultra-wide bandgap perovskite solar cell, the BCP layer or the SnO2 layer is closer to the transparent electrode layer than the PC 61 BM layer.

6. The four-terminal stacked solar cell based on ultra-wide bandgap perovskite according to claim 2, wherein The thickness of the hole transport layer is 2 - 100 nm; The hole transport layer includes at least one of nickel oxide, self-assembled monolayers SAMs, and PTAA; The self-assembled monolayers SAMs include at least one of 2PACZ, MeO-2PACZ, 4PACZ, and Me-4PACZ.

7. The four-terminal stacked perovskite solar cell based on ultra-wide bandgap perovskite according to claim 2, characterized in that, The thickness of the transparent electrode layer is 2 - 200 nm; The transparent electrode layer includes at least one of gold, silver, copper, ITO, IZO, IWO, and FTO.

8. The four-terminal stacked solar cell based on ultra-wide bandgap perovskite according to claim 1, wherein, The bottom cell includes one or a combination of a crystalline silicon solar cell, a cadmium telluride solar cell, a copper indium gallium selenide solar cell, a copper indium tin sulfide solar cell, and a perovskite solar cell.

9. The preparation method of the four-terminal stacked perovskite solar cell based on ultra-wide bandgap perovskite according to any one of claims 1-8, characterized in that, Including: Preparing an ultra-wide bandgap perovskite solar cell: preparing an electron transport layer or a hole electron layer on a conductive base layer, preparing a perovskite layer on the electron transport layer or the hole electron layer, preparing a passivation layer on the perovskite layer, preparing a hole transport layer or an electron transport layer on the passivation layer, and preparing a transparent electrode layer on the hole transport layer or the electron transport layer; Covering the side of the ultra-wide bandgap perovskite solar cell with a transparent electrode layer on the surface of the bottom cell to obtain the four-terminal stacked solar cell based on the ultra-wide bandgap perovskite.

10. The preparation method of the four-terminal stacked solar cell based on ultra-wide bandgap perovskite according to claim 9, characterized in that, The preparation method of the electron transport layer includes at least one of pulsed laser deposition, magnetron sputtering, slot die coating, blade coating, spraying, screen printing, and spin coating; The preparation method of the perovskite layer includes a one-step method or a two-step method, and the preparation process includes at least one of a vacuum method, slot die coating, blade coating, spraying, screen printing, and spin coating; The preparation method of the passivation layer includes at least one of pulsed laser deposition, magnetron sputtering, slot coating, doctor blading, spraying, screen printing, and spin coating; The preparation method of the hole transport layer includes at least one of pulsed laser deposition, magnetron sputtering, slot coating, doctor blading, spraying, screen printing, and spin coating; The preparation method of the transparent electrode layer includes at least one of vacuum evaporation, magnetron sputtering, and screen printing.

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