Method for bonding single crystal silicon rod with crystal orientation below 150cm

Abstract

According to the invention, the 1t of less than 150 cm is provided; 111gt, 111gt; the invention discloses a bonding method of a crystal orientation monocrystalline silicon rod, and belongs to the technical field of monocrystalline silicon wafer processing. 111gt, 111gt; a crystal orientation silicon single crystal rod is placed on the X-ray machine, and 1t; 111gt, 111gt; the OF surface of the crystal orientation silicon single crystal rod is downwards in contact with a measuring table of an X-ray machine, the X-ray machine is used for measuring the crystal orientation deviation degree in the X direction and the crystal orientation deviation degree in the Y direction, the lower end face of the resin plate is machined according to the value of the crystal orientation deviation degree in the Y direction, the inclination angle of the machined resin plate is equal to the crystal orientation deviation degree, and the inclination angle of the machined resin plate is equal to the crystal orientation deviation degree. According to the bonding method, the bonding length lt is 150 cm or below; 111gt, 111gt; when a crystal orientation silicon single crystal rod is used, the OF surface is used as a reference surface for measuring the crystal orientation deviation degree in the X direction and the crystal orientation deviation degree in the Y direction, the OF surface is downwards placed on the bonding table in a horizontal state, and the resin plate is bonded at the lt; 111gt, 111gt; the crystal orientation is the upper part of the single crystal silicon rod, so that the single crystal silicon rod is prevented from rotating to cause the deviation of the reference surface, the deviation adjustment accuracy in the Y direction is improved, and the result is ensured; 111gt, 111gt; and the plane orientation Y of the crystal orientation silicon single crystal rod meets the requirement.

Description

Technical Field

[0001] The present invention relates to the technical field of single-crystal silicon wafer processing, and particularly relates to a method for bonding a <111>-oriented single-crystal silicon rod with a length of less than 150 cm. Background Art

[0002] In the semiconductor industry, cutting a single-crystal silicon rod into wafers is a key process for manufacturing wafers or thin slices. The core objective is to cut the single-crystal silicon rod into high-precision and low-damage high-quality wafers to meet the requirements of subsequent polishing, epitaxy, or device manufacturing. Warpage is an important parameter for measuring the quality of wafers. The lower the value of warpage, the higher the quality of the wafers. In order to control warpage and obtain high-quality wafers, before cutting the single-crystal silicon rod, it is usually necessary to first bond the single-crystal silicon rod to a support substrate and fix the single-crystal silicon rod using the support substrate to prevent relative displacement or vibration between the cutting tool and the single-crystal silicon rod during the cutting process.

[0003] For example, the Chinese invention patent with the application number "CN202210348230.1" discloses a bonding method for two-dimensionally adjusting the crystal orientation of a single-crystal silicon rod. It measures the crystal orientation deviation in the X direction and the crystal orientation deviation in the Y direction of the crystal rod using an X-ray machine, processes a resin plate according to the crystal orientation deviation in the Y direction, then bonds the resin plate to the lower end of the crystal rod to complete the adjustment of the crystal orientation deviation in the Y direction, and then makes the workpiece plate of the bonding device swing correspondingly in the X direction according to the crystal orientation deviation in the X direction, and then bonds the upper end surface of the workpiece plate and the lower end surface of the resin plate. However, when bonding a <111>-oriented single-crystal silicon rod with a length of less than 150 cm using the above technical solution, since the bonding area between the relatively short single-crystal silicon rod and the resin plate is small and the bonding surface is arc-shaped, the adhesive force between the resin plate and the single-crystal silicon rod is insufficient during the curing process of the adhesive, resulting in relative displacement between the resin plate and the single-crystal silicon rod, and finally causing the Y-plane orientation of the single-crystal silicon rod to exceed the standard and the warpage of the wafer after slicing to be too high, unable to meet the requirements of customers. Summary of the Invention

[0004] In view of this, in order to address the above deficiencies, it is necessary to propose a method for bonding a <111>-oriented single-crystal silicon rod with a length of less than 150 cm to prevent the Y-plane orientation of the single-crystal silicon rod from exceeding the standard due to the offset between the resin plate and the single-crystal silicon rod.

[0005] The present invention provides a method for bonding a <111>-oriented single-crystal silicon rod with a length of less than 150 cm, including the following steps: Step 1: Place the <111>-oriented single-crystal silicon rod on an X-ray machine, and make the OF surface of the <111>-oriented single-crystal silicon rod face down and contact the measurement table of the X-ray machine; Step 2: Use the X-ray machine to measure the crystal orientation deviation in the X direction and the crystal orientation deviation in the Y direction respectively; Step 3: If the value of the crystal orientation deviation in the Y direction is greater than or equal to the threshold value of the crystal orientation deviation, the lower end surface of the resin plate is machined according to the value of the crystal orientation deviation in the Y direction. After machining, an inclined angle is formed on the lower end surface of the resin plate, and this inclined angle is equal to the crystal orientation deviation, so as to adjust the crystal orientation deviation in the Y direction through the inclined angle of the lower end surface of the resin plate. If the value of the crystal orientation deviation in the Y direction is less than the threshold value of the crystal orientation deviation, it is not necessary to machine the lower end surface of the resin plate; Step 4: Place the <111> crystal orientation single crystal silicon rod with the OF surface facing down in a horizontal state on the bonding table; Step 5: Bond the resin plate to the upper part of the <111> crystal orientation single crystal silicon rod to complete the deviation adjustment in the Y direction; Step 6: Adjust the workpiece plate of the bonding equipment to swing in the X direction according to the crystal orientation deviation in the X direction. The swinging angle is equal to the crystal orientation deviation in the X direction, and the swinging direction is the same as the crystal orientation deviation direction in the X direction. Then move the <111> crystal orientation single crystal silicon rod with the resin plate bonded to it above the processing table of the bonding equipment. Then the processing table of the bonding equipment rises, and the upper end of the workpiece plate is bonded to the lower end surface of the resin plate to complete the deviation adjustment in the X direction.

[0006] Preferably, in Step 3, the threshold value of the crystal orientation deviation is 5°.

[0007] Preferably, Step 5 is specifically as follows: S51: Apply an adhesive on the upper end surface of the resin plate; S52: Invert the resin plate with the adhesive applied on it onto the upper part of the <111> crystal orientation single crystal silicon rod; S53: Use a level to measure the 0° of the arc on the upper part of the <111> crystal orientation single crystal silicon rod and adjust the position of the resin plate so that the resin plate is relatively horizontal with the OF surface; S54: In an environment with a predetermined temperature, the bonding equipment applies a predetermined pressure between the resin plate and the <111> crystal orientation single crystal silicon rod. After bonding for a predetermined time, the deviation adjustment in the Y direction is completed.

[0008] Preferably, in Step S54, the predetermined temperature is 23°-25°, the predetermined pressure is 95N-105N, and the predetermined time is 4.5min-5.5min.

[0009] Preferably, a first remeasurement step is further included before the step 6. The first remeasurement step specifically is: measuring the level value of the resin plate relative to the OF plane after the above bonding is completed by using a level. If the level value is greater than 0.01°, separating the resin plate from the <111> crystal orientation single crystal rod, and restarting the bonding again in the order of steps 1 to 5.

[0010] Preferably, a second remeasurement step is further included after the step 6. The second remeasurement step specifically is: moving the <111> crystal orientation single crystal rod after the above bonding is completed to the X-ray machine again, and performing a surface orientation remeasurement on the <111> crystal orientation single crystal rod after bonding by using the X-ray machine to determine whether the surface orientation is corrected qualified. When it is unqualified, separating the workpiece plate, the resin plate, and the <111> crystal orientation single crystal rod in sequence, and restarting the bonding again in the order of steps 1 to 6.

[0011] From the above technical solution, it can be seen that the present invention provides a 150cm or less <111> The method of bonding the crystal-oriented single crystal silicon rod is to first <111> The crystal-oriented single crystal silicon rod is placed on the X-ray machine, and <111> The OF surface of the crystal-oriented single crystal silicon rod is downwardly contacted with the measuring table of the X-ray machine; the crystal-oriented deviation in the X direction and the crystal-oriented deviation in the Y direction are respectively measured by the X-ray machine; if the value of the crystal-oriented deviation in the Y direction is greater than or equal to the threshold value of the crystal-oriented deviation, the lower end surface of the resin plate is machined according to the value of the crystal-oriented deviation in the Y direction, and the lower end surface of the resin plate after machining forms an inclination angle, and the inclination angle is equal to the crystal-oriented deviation, so that the crystal-oriented deviation in the Y direction is adjusted by the inclination angle of the lower end surface of the resin plate, and if the value of the crystal-oriented deviation in the Y direction is less than the threshold value of the crystal-oriented deviation, the lower end surface of the resin plate does not need to be machined; then <111> The OF surface of the crystal-oriented single crystal silicon rod is placed horizontally on the bonding table; then the resin plate is bonded to <111> The upper part of the single crystal silicon rod is adjusted in the Y direction; according to the crystal deviation in the X direction, the workpiece plate of the equipment is swung in the X direction, and the swing angle is equal to the crystal deviation in the X direction, and the swing direction is consistent with the crystal deviation in the X direction. <111> The crystal-oriented single crystal silicon rod is moved to the top of the processing table of the bonding equipment, and then the processing table of the bonding equipment rises, the upper end of the workpiece plate and the lower end surface of the resin plate are bonded, and the deviation adjustment in the X direction is completed. This bonding method has a bonding length of less than 150cm <111> When the single crystal silicon rod is oriented, the OF surface is used as the reference surface for measuring the crystal deviation in the X direction and the crystal deviation in the Y direction, and the OF surface is placed horizontally on the bonding table with the resin plate facing downward. <111> The upper part of the single crystal silicon rod is crystal-oriented, thereby preventing the single crystal silicon rod from rotating and causing the reference plane to shift, improving the accuracy of the deviation adjustment in the Y direction, ensuring that the surface orientation Y of the single crystal silicon rod meets the requirements and reducing the warpage of the wafer after slicing. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 The embodiment of the present invention provides a 150 cm or less <111> Flow chart of the method for bonding crystalline single crystal silicon rods.

[0013] Figure 2 In the embodiment of the method of the present invention <111> Schematic diagram of the crystal orientation of a single-crystal silicon rod.

[0014] Figure 3 The level meter is used to measure the <111> Schematic diagram of the arc 0° on the upper part of the single crystal silicon rod.

[0015] Figure 4 This is a diagram showing the detection results of the X-ray machine re-measuring the surface orientation Y in the embodiment of the method of the present invention.

[0016] Figure 5The figure shows the test result of the azimuth Y of the retest surface of the X-ray machine in the comparative example of the traditional method. Detailed implementation mode

[0017] To further understand the present invention, the preferred implementation modes of the present invention will be described below in conjunction with embodiments. However, it should be understood that these descriptions are only for further explaining the features and advantages of the present invention, rather than limiting the claims of the present invention.

[0018] Please refer to Figure 1 and Figure 2 , the present invention provides a bonding method for a <111> crystal orientation single crystal silicon rod with a length of less than 150 cm, including the following steps: Step 1: Place the <111> crystal orientation single crystal silicon rod on the X-ray machine, and the OF surface of the <111> crystal orientation single crystal silicon rod faces downward and contacts the measuring table of the X-ray machine; Step 2: Use the X-ray machine to measure the crystal orientation deviation in the X direction and the crystal orientation deviation in the Y direction respectively; Step 3: If the value of the crystal orientation deviation in the Y direction is greater than or equal to the threshold value of the crystal orientation deviation, machine-process the lower end surface of the resin plate according to the value of the crystal orientation deviation in the Y direction. After processing, an inclined angle is formed on the lower end surface of the resin plate, and the inclined angle is equal to the crystal orientation deviation, so as to adjust the crystal orientation deviation in the Y direction through the inclined angle of the lower end surface of the resin plate. If the value of the crystal orientation deviation in the Y direction is less than the threshold value of the crystal orientation deviation, it is not necessary to machine-process the lower end surface of the resin plate; Step 4: Place the <111> crystal orientation single crystal silicon rod with the OF surface facing downward in a horizontal state on the bonding table; Step 5: Bond the resin plate to the upper part of the <111> crystal orientation single crystal silicon rod to complete the deviation adjustment in the Y direction; Step 6: Adjust the workpiece plate of the bonding equipment to swing in the X direction according to the crystal orientation deviation in the X direction. The swinging angle is equal to the crystal orientation deviation in the X direction, and the swinging direction is the same as the crystal orientation deviation direction in the X direction. Then move the <111> crystal orientation single crystal silicon rod with the resin plate bonded thereto above the processing table of the bonding equipment. Then the processing table of the bonding equipment rises, and the upper end of the workpiece plate and the lower end surface of the resin plate are bonded to complete the deviation adjustment in the X direction.

[0019] Compared with the prior art, the beneficial effects of the present invention are as follows: When the bonding method of the present invention bonds a <111> crystal orientation single crystal silicon rod with a length of less than 150 cm, the OF plane is used as the reference plane for measuring the crystal orientation deviation in the X direction and the crystal orientation deviation in the Y direction, and the OF plane is placed horizontally downward on the bonding table. The resin plate is bonded to the upper part of the <111> crystal orientation single crystal silicon rod, thereby preventing the single crystal silicon rod from rotating and causing the reference plane to shift, improving the accuracy of the deviation adjustment in the Y direction, ensuring that the plane orientation Y of the single crystal silicon rod meets the requirements, and reducing the warpage of the wafer after slicing.

[0020] Further, in step 3, the threshold value of the crystal orientation deviation is 5°.

[0021] Specifically, please refer to Figure 3 , in order to further improve the accuracy of the deviation adjustment in the Y direction, step 5 is specifically as follows: S51: Apply an adhesive to the upper end surface of the resin plate; S52: Invert the resin plate coated with the adhesive on the upper part of the <111> crystal orientation single crystal silicon rod; S53: Use a level to measure the 0° arc at the upper part of the <111> crystal orientation single crystal silicon rod and adjust the position of the resin plate so that the resin plate is relatively horizontal with the OF plane; S54: In an environment with a predetermined temperature, the bonding device applies a predetermined pressure between the resin plate and the <111> crystal orientation single crystal silicon rod, and after a predetermined time, the deviation adjustment in the Y direction is completed.

[0022] Further, in step S54, the predetermined temperature is 23° - 25°, the predetermined pressure is 95 N - 105 N, and the predetermined time is 4.5 min - 5.5 min.

[0023] Further, before step 6, there is also a first remeasurement step, and the first remeasurement step is specifically as follows: Use a level to measure the horizontal value of the resin plate relative to the OF plane after the above bonding is completed. If the horizontal value is greater than 0.01°, separate the resin plate from the <111> crystal orientation single crystal silicon rod, and start the bonding again in the order of steps 1 to 5.

[0024] Further, after step 6 is completed, there is also a second remeasurement step, and the second remeasurement step is specifically as follows: Move the <111> crystal orientation single crystal silicon rod after the above bonding to the X-ray machine again, use the X-ray machine to perform a remeasurement of the plane orientation of the <111> crystal orientation single crystal silicon rod after bonding, and judge whether the plane orientation is corrected and qualified. If it is unqualified, separate the workpiece plate, the resin plate, and the <111> crystal orientation single crystal silicon rod in sequence, and then start the bonding again in the order of steps 1 to 6.

[0025] To further understand the present invention, the following shows the test results of the <111> crystal orientation single-crystal silicon rod with a length of less than 150 cm followed by the orientation Y through examples of the method of the present invention and comparative examples of traditional methods. Example

[0026] First, randomly select 30 <111> crystal orientation single-crystal silicon rods with a length of less than 150 cm. All the selected <111> crystal orientation single-crystal silicon rods are joined according to the joining method of the present invention. The <111> crystal orientation single-crystal silicon rods are successively placed on an X-ray machine, and the OF surface of the <111> crystal orientation single-crystal silicon rod faces downward and contacts the measuring table of the X-ray machine. The OF surface is used as the reference surface for measuring the crystal orientation deviation in the X direction and the crystal orientation deviation in the Y direction. The X-ray machine is used to measure the crystal orientation deviation in the X direction and the crystal orientation deviation in the Y direction respectively.

[0027] If the value of the crystal orientation deviation in the above Y direction is greater than or equal to 5º, then the lower end surface of the resin plate is machined according to the value of the crystal orientation deviation in the Y direction. The lower end surface of the resin plate after machining and the lower end surface of the resin plate before machining form an inclination angle, and this inclination angle is equal to the crystal orientation deviation, so as to adjust the crystal orientation deviation in the Y direction through the inclination angle of the lower end surface of the resin plate. If the value of the crystal orientation deviation in the above Y direction is less than 5º, then the lower end surface of the resin plate does not need to be machined.

[0028] Then, place the <111> crystal orientation single-crystal silicon rod with the OF surface facing downward in a horizontal state on the joining table, and apply an adhesive to the upper end surface of the resin plate; invert the resin plate coated with the adhesive on the upper part of the <111> crystal orientation single-crystal silicon rod; then use a level to measure the arc of 0º at the upper part of the <111> crystal orientation single-crystal silicon rod and adjust the position of the resin plate to keep the resin plate relatively horizontal with the OF surface, ensuring that there is no offset between the reference surface (OF surface) and the resin plate; finally, in an environment with a predetermined temperature of 23° - 25°, the joining device applies a predetermined pressure of 100 N between the resin plate and the <111> crystal orientation single-crystal silicon rod. After a predetermined time (5 min), the deviation adjustment in the Y direction is completed.

[0029] Finally, adjust the workpiece plate of the joining device to swing in the X direction according to the crystal orientation deviation in the X direction. The swing angle is equal to the crystal orientation deviation in the X direction, and the swing direction is the same as the crystal orientation deviation direction in the X direction. Then move the <111> crystal orientation single-crystal silicon rod with the resin plate joined to above the processing table of the joining device, and then the processing table of the joining device rises to join the upper end of the workpiece plate and the lower end surface of the resin plate, completing the deviation adjustment in the X direction. The contact pressure between the workpiece plate and the resin plate is 200 ± 20 N. The temperature during this joining process is controlled between 23° - 25°, and the joining duration is 15 minutes. At this time, the deviation adjustment of the crystal rod in the X direction is completed.

[0030] Then, 30 pieces of <111> The single crystal silicon rods are moved to the X-ray machine respectively, and the surface orientation Y of each single crystal silicon rod is re-measured by the X-ray machine. The test results are as follows: Figure 4 shown.

[0031] Comparative Example: First, randomly select the length of less than 150cm <111> 30 single crystal silicon rods, selected from the above <111> The single crystal silicon rods are processed according to the traditional method, and then <111> The crystal-oriented single crystal silicon rod is placed on the X-ray machine and clamped by two rollers. <111> Crystalline single crystal silicon rod, and <111> The OF plane of the crystal-oriented single crystal silicon rod is facing upward in the vertical direction, and an X-ray machine is used to measure the crystal orientation deviation in the X direction and the crystal orientation deviation in the Y direction respectively.

[0032] The lower end face of the resin plate is machined according to the value of the crystal deviation in the Y direction. The lower end face of the resin plate after machining forms an inclination angle with the lower end face of the resin plate before machining. The inclination angle is equal to the crystal deviation. The machined resin plate is bonded to the bottom of the crystal rod using bonding equipment to complete the deviation adjustment of the crystal rod in the Y direction. Glue is applied on the upper end face of the machined resin plate, and then the upper end face of the resin plate is bonded to the bottom of the crystal rod. After the resin plate and the crystal rod are in contact, the bonding equipment applies a pressure of 100N between the resin plate and the crystal rod. The temperature during the bonding process is controlled between 23°-25°. The bonding time is 5 minutes, and the deviation adjustment of the crystal rod in the Y direction is completed.

[0033] Finally, according to the crystal deviation in the X direction, the workpiece plate of the bonding equipment is adjusted to swing in the X direction. The swing angle is equal to the crystal deviation in the X direction, and the swing direction is consistent with the crystal deviation in the X direction. The crystal rod bonded with the resin plate is moved above the processing table of the bonding equipment, and then the processing table of the bonding equipment rises, and the upper end of the workpiece plate and the lower end surface of the resin plate are bonded. The contact pressure between the workpiece plate and the resin plate is 200±20N. The temperature during the bonding process is controlled between 23°-25°. The bonding time is 15 minutes. At this time, the deviation adjustment of the crystal rod in the X direction is completed.

[0034] The 30 pieces of the above comparative example were then <111> The single crystal silicon rods are moved to the X-ray machine respectively, and the surface orientation Y of each single crystal silicon rod is re-measured by the X-ray machine. The test results are as follows: Figure 5 shown.

[0035] Detection results according to the embodiment Figure 4 The test results of the comparative example Figure 5 The detection results of the surface orientations Y of all the single crystal silicon rods in the embodiments and comparative examples can be statistically calculated, as shown in Table 1: Table 1 Statistical results of detection of the surface orientation Y of all single crystal silicon rods in the embodiments and comparative examples

[0036] Please refer to Table 1. It can be seen therefrom that the non-compliance rate of the plane orientation Y of the 30 <111> -oriented single-crystal silicon rods joined by the method of the present invention is 0%. It effectively prevents the non-compliance of the plane orientation Y of the <111> -oriented single-crystal silicon rods with a length of less than 150 cm, greatly reduces the probability that the staff needs to rework the joined silicon rods, thereby reducing the labor intensity of the staff and improving the joining efficiency.

[0037] The above-disclosed are only the preferred embodiments of the present invention. Certainly, the scope of the rights of the present invention cannot be limited thereby. Those of ordinary skill in the art can understand all or part of the processes of implementing the above embodiments, and the equivalent changes made according to the claims of the present invention still fall within the scope covered by the invention.

Claims

1. A bonding method for a <111> crystal orientation single crystal silicon rod with a length of less than 150 cm, characterized in that: It includes the following steps: Step 1: Place the <111> crystal orientation single crystal silicon rod on the X-ray machine, and the OF surface of the <111> crystal orientation single crystal silicon rod faces downward and contacts the measuring table of the X-ray machine; Step 2: Use the X-ray machine to measure the crystal orientation deviation in the X direction and the crystal orientation deviation in the Y direction respectively; Step 3: If the value of the crystal orientation deviation in the Y direction is greater than or equal to the threshold value of the crystal orientation deviation, then machine process the lower end surface of the resin plate according to the value of the crystal orientation deviation in the Y direction. After processing, an inclined angle is formed on the lower end surface of the resin plate, and this inclined angle is equal to the crystal orientation deviation, so as to adjust the crystal orientation deviation in the Y direction through the inclined angle of the lower end surface of the resin plate. If the value of the crystal orientation deviation in the Y direction is less than the threshold value of the crystal orientation deviation, then it is not necessary to machine process the lower end surface of the resin plate; Step 4: Place the <111> crystal orientation single crystal silicon rod with the OF surface facing downward in a horizontal state on the bonding table; Step 5: Bond the resin plate on the upper part of the <111> crystal orientation single crystal silicon rod to complete the deviation adjustment in the Y direction; Step 6: Adjust the workpiece plate of the bonding equipment to swing in the X direction according to the crystal orientation deviation in the X direction. The swinging angle is equal to the crystal orientation deviation in the X direction, and the swinging direction is consistent with the crystal orientation deviation direction in the X direction. Then move the <111> crystal orientation single crystal silicon rod with the resin plate bonded thereon above the processing table of the bonding equipment. Then the processing table of the bonding equipment rises, and bond the upper end of the workpiece plate and the lower end surface of the resin plate to complete the deviation adjustment in the X direction.

2. The bonding method of a <111> crystal orientation single crystal silicon rod with a length of less than 150 cm according to claim 1, characterized in that: In the step 3, the threshold value of the crystal orientation deviation is 5º.

3. The bonding method of a <111> crystal orientation single crystal silicon rod with a length below 150 cm according to claim 1, characterized in that: The step 5 is specifically: S51: Coat the upper end surface of the resin plate with an adhesive; S52: Invert the resin plate coated with the adhesive on the upper part of the <111> crystal orientation single crystal silicon rod; S53: Use a level to measure the 0º of the arc on the upper part of the <111> crystal orientation single crystal silicon rod and adjust the position of the resin plate so that the resin plate remains relatively horizontal with the OF surface; S54: In an environment with a predetermined temperature, the bonding equipment applies a predetermined pressure between the resin plate and the <111> crystal orientation single crystal silicon rod. After bonding for a predetermined time, complete the deviation adjustment in the Y direction.

4. The bonding method of a <111> crystal orientation single crystal silicon rod with a length below 150 cm according to claim 3, characterized in that: In the step S54, the predetermined temperature is 23° - 25°, the predetermined pressure is 95N - 105N, and the predetermined time is 4.5min - 5.5min.

5. The bonding method of a <111> crystal orientation single crystal silicon rod with a length of less than 150 cm according to claim 1, characterized in that: Before the step 6, there is also a first remeasurement step, and the first remeasurement step is specifically: Use a level to measure the horizontal value of the resin plate relative to the OF surface after the bonding is completed. If the horizontal value is greater than 0.01°, then separate the resin plate from the <111> crystal orientation single crystal silicon rod, and start the bonding again in the order of steps 1 to 5.

6. The bonding method of a <111> crystal orientation single crystal silicon rod with a length of less than 150 cm according to claim 1, characterized in that: After the completion of the above-mentioned step 6, a second re-inspection step is further included. Specifically, the second re-inspection step is as follows: Move the <111>-oriented single-crystalline silicon rod after bonding back to the X-ray machine, and use the X-ray machine to re-inspect the surface orientation of the <111>-oriented single-crystalline silicon rod after bonding to determine whether the surface orientation is corrected and qualified. When it is unqualified, after separating the workpiece plate, the resin plate, and the <111>-oriented single-crystalline silicon rod in sequence, start the bonding again in the order of step 1 to step 6.

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