Self-adaptive automobile head lamp driving module

Abstract

The invention provides a self-adaptive automobile head lamp driving module. The self-adaptive automobile head lamp driving module comprises a light sensor, a comparison circuit, a silicon-controlled rectifier, a switching circuit, a light source circuit and a driving circuit, the light sensor is used for outputting a light sensing signal. The comparison circuit is coupled to the light sensor and is used for outputting a touch signal when the light sensing signal is greater than a critical potential. The silicon-controlled rectifier is coupled to the comparison circuit and used for rectifying the touch signal to generate a rectified signal. The switching circuit is coupled to the silicon-controlled rectifier and is used for generating a switching signal according to the rectified signal. The light source circuit is coupled to the switching circuit and used for turning on or off a light source of the light source circuit according to the switching signal. The driving circuit is coupled to the light source circuit and is used for providing a driving signal for the light source.

Description

Technical Field

[0001] The present invention relates to an automotive headlight drive module, and more particularly to an adaptive automotive headlight drive module. Background Art

[0002] Adaptive headlights are becoming increasingly common, and are often installed in high-end vehicles. However, a vehicle is a tool for high-speed travel, and accidents often occur. If the light source of the adaptive headlight is a laser light source, there may be safety concerns. When the laser light leaks and the light source is not turned off in time, it will cause harm to people.

[0003] Therefore, it is necessary to design a new type of adaptive automotive headlight drive module to overcome the above defects. Summary of the Invention

[0004] The purpose of the present invention is to provide one that can install a light sensor on a misaligned optical path where the laser light will not irradiate during normal operation of the laser light considering the protection circuit against light hazards, and timely turn off the laser light source to achieve a protective effect.

[0005] To achieve the above object, the present invention provides an adaptive automotive headlight drive module, which is characterized in that it includes: a light sensor for outputting a light sensing signal; a comparison circuit coupled to the light sensor for outputting a trigger signal when the light sensing signal is greater than a critical potential; a silicon-controlled rectifier coupled to the comparison circuit for rectifying the trigger signal to generate a rectified signal; a switch circuit coupled to the silicon-controlled rectifier for generating a switch signal according to the rectified signal; a light source circuit coupled to the switch circuit for turning on or off the light source of the light source circuit according to the switch signal; and a drive circuit coupled to the light source circuit for providing a drive signal to the light source.

[0006] Preferably, the comparison circuit includes: an amplifier including: a positive terminal coupled to the light sensor; a negative terminal; a power supply terminal coupled to a first power supply; and an output terminal; a first resistor including: a first terminal coupled to the first power supply; and a second terminal coupled to the negative terminal of the amplifier; and a second resistor including: a third terminal coupled to the negative terminal of the amplifier; and a fourth terminal coupled to the ground terminal.

[0007] Preferably, the silicon controlled rectifier includes: a third resistor including a fifth terminal; and a sixth terminal coupled to the output terminal of the amplifier; a fourth resistor including a seventh terminal coupled to the fifth terminal of the third resistor; and an eighth terminal coupled to the ground terminal; a first N-type transistor including a first collector; a first emitter coupled to the ground terminal; and a first base coupled to the fifth terminal of the third resistor; a fifth resistor including a ninth terminal; and a tenth terminal coupled to the ground terminal; a first P-type transistor including a second emitter; a second collector coupled to the ninth terminal of the fifth resistor; and a second base coupled to the first collector of the first N-type transistor; a sixth resistor including an eleventh terminal coupled to the second emitter of the first P-type transistor; and a twelfth terminal coupled to the second base of the first P-type transistor; and a seventh resistor including a thirteenth terminal; and a fourteenth terminal coupled to the eleventh terminal of the sixth resistor.

[0008] Preferably, the first N-type transistor is a first NPN bipolar junction transistor, the first collector of the first N-type transistor is the collector of the first NPN bipolar junction transistor, the first emitter of the first N-type transistor is the emitter of the first NPN bipolar junction transistor, the first base of the first N-type transistor is the base of the first NPN bipolar junction transistor, the first P-type transistor is a first PNP bipolar junction transistor, the second emitter of the first P-type transistor is the emitter of the first PNP bipolar junction transistor, the second collector of the first P-type transistor is the collector of the first PNP bipolar junction transistor, and the second base of the first P-type transistor is the base of the first PNP bipolar junction transistor.

[0009] Preferably, the switching circuit includes: a second P-type transistor including a third emitter; a third collector; and a third base coupled to the thirteenth terminal of the seventh resistor; an eighth resistor including a fifteenth terminal coupled to the third emitter of the second P-type transistor; and a sixteenth terminal coupled to the third base of the second P-type transistor; a ninth resistor including a seventeenth terminal coupled to a second power supply; and an eighteenth terminal coupled to the third emitter of the second P-type transistor; and a first diode including a first cathode coupled to the third emitter of the second P-type transistor; and a second anode coupled to the ground terminal.

[0010] Preferably, the second P-type transistor is a second PNP bipolar junction transistor, the third emitter of the second P-type transistor is the emitter of the second PNP bipolar junction transistor, the third collector of the second P-type transistor is the collector of the second PNP bipolar junction transistor, the base of the second P-type transistor is the base of the second PNP bipolar junction transistor, and the first diode is a Zener diode.

[0011] Preferably, the light source circuit includes: a tenth resistor including a nineteenth terminal and a twentieth terminal coupled to the third collector of the second P-type transistor; an eleventh resistor including a twenty-first terminal coupled to a shunt node and a twenty-second terminal coupled to the third collector of the second P-type transistor; a second N-type transistor including a first drain, a first source coupled to the ground terminal, and a gate coupled to the nineteenth terminal of the tenth resistor; and a light source having two ends respectively coupled to the first drain of the second N-type transistor and the ground terminal.

[0012] Preferably, the second N-type transistor is an N-type metal-oxide-semiconductor field-effect transistor (MOSFET). The first drain of the second N-type transistor is the drain of the N-type MOSFET, the first source of the second N-type transistor is the source of the N-type MOSFET, and the gate of the second N-type transistor is the gate of the N-type MOSFET.

[0013] Preferably, the driving circuit includes: a capacitor including a first end coupled to the first drain of the second N-type transistor and a second end coupled to the ground terminal; an inductor including a first end and a second end coupled to the first end of the capacitor; a second diode including a cathode coupled to the first end of the inductor and an anode coupled to the ground terminal; a third P-type transistor including a second source, a second drain coupled to the cathode of the second diode, and a second gate; a driving integrated circuit including a first connection end coupled to a third power supply, a second connection end coupled to the third power supply, a third connection end coupled to the second source of the third P-type transistor, a fourth connection end coupled to the second gate of the third P-type transistor, an enable end for receiving an enable signal, a pulse width modulation end for receiving a pulse width modulation signal, and a strobe end for receiving a strobe signal; and a twelfth resistor including a twenty-third terminal coupled to the second end of the driving integrated circuit and a twenty-fourth terminal coupled to the third end of the driving integrated circuit.

[0014] Preferably, the third P-type transistor is a P-type metal-oxide-semiconductor field-effect transistor (MOSFET). The second source of the third P-type transistor is the source of the P-type MOSFET, the second drain of the third P-type transistor is the drain of the P-type MOSFET, and the second gate of the third P-type transistor is the gate of the P-type MOSFET.

[0015] Compared with the prior art, an adaptive automotive headlight driving module provided by an embodiment of the present invention includes a light sensor, a comparison circuit, a silicon-controlled rectifier, a switching circuit, a power supply circuit, and a driving circuit. The light sensor is used to output a light sensing signal; the comparison circuit is coupled to the light sensor and is used to output a trigger signal when the light sensing signal is greater than a critical potential; the silicon-controlled rectifier is coupled to the comparison circuit and is used to rectify the trigger signal to generate a rectified signal; the switching circuit is coupled to the silicon-controlled rectifier and is used to generate a switching signal according to the rectified signal; the light source circuit is coupled to the switching circuit and is used to turn on or off the light source of the light source circuit according to the switching signal; the driving circuit is coupled to the light source circuit and is used to provide a driving signal to the light source. In this way, considering the protection circuit against light hazards, the light sensor is installed on a misaligned optical path where the laser light will not irradiate during normal operation, and the laser light source is turned off in a timely manner to achieve the protection effect. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 is a block diagram of the adaptive automotive headlight driving module of the present invention.

[0017] Figure 2 is Figure 1 a circuit diagram of the adaptive automotive headlight driving module. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0018] To further understand the purpose, structure, features, and functions of the present invention, the following is a detailed description in conjunction with the embodiments.

[0019] Figure 1 is a block diagram of the adaptive automotive headlight driving module 100. The adaptive automotive headlight driving module 100 includes a light sensor 102, a comparison circuit 104, a silicon-controlled rectifier 106, a switching circuit 108, a light source circuit 110, and a driving circuit 112. The light sensor 102 is used to output a light sensing signal. The comparison circuit 104 is coupled to the light sensor 102 and is used to output a trigger signal when the light sensing signal is greater than a critical potential. The silicon-controlled rectifier 106 is coupled to the comparison circuit 104 and is used to rectify the trigger signal to generate a rectified signal. The switching circuit 108 is coupled to the silicon-controlled rectifier 106 and is used to generate a switching signal according to the rectified signal. The light source circuit 110 is coupled to the switching circuit 108 and is used to turn on or off the light source (such as a laser light source) of the light source circuit 110 according to the switching signal. The driving circuit 112 is coupled to the light source circuit 110 and is used to provide a driving signal to the light source to drive the light source to emit light normally.

[0020] The optical sensor 102 is disposed on a misaligned optical path that will not be irradiated when the light source operates normally. When a car accident or an accident occurs, the light source of the light source circuit 110 irradiates the optical sensor 102, causing the optical sensor 102 to emit an optical sensing signal. If the optical sensing signal is greater than the critical potential, the comparison circuit 104 will output a trigger signal, and the silicon-controlled rectifier 106 will output a rectification signal. After receiving the rectification signal, the switch circuit 108 will output a switch signal to the light source circuit 110. After receiving the switch signal, the light source circuit 110 will turn off the light source of the light source circuit 110, short the light source to the ground terminal, thereby achieving the protection effect of turning off the light source.

[0021] Figure 2 is the circuit diagram of the adaptive automotive headlight driving module 100. The optical sensor 102 is disposed on a misaligned optical path that will not be irradiated when the light source operates normally, and the comparison circuit 104 is coupled to the optical sensor 102. The comparison circuit 104 includes an amplifier Q1, a first resistor R1, and a second resistor R2. The amplifier Q1 includes a positive terminal, a negative terminal, a power supply terminal, and an output terminal. The positive terminal is coupled to the optical sensor 102, and the power supply terminal is coupled to the first power supply Vcc2. The first resistor R1 includes a first terminal coupled to the first power supply Vcc2 and a second terminal coupled to the negative terminal of the amplifier Q1. The second resistor R2 includes a third terminal coupled to the negative terminal of the amplifier Q1 and a fourth terminal included in the second resistor R2 coupled to the ground terminal. When the light source fails and irradiates the optical sensor 102, the optical sensor 102 irradiated by the light source raises the potential of the positive terminal of the amplifier Q1. When the potential of the positive terminal of the amplifier Q1 exceeds that time, the comparison circuit 104 will output a trigger signal.

[0022] A silicon controlled rectifier (SCR) 106 is coupled to the output terminal of an amplifier Q1. The silicon controlled rectifier (SCR) 106 includes a third resistor R3, a fourth resistor R4, a first N-type transistor Q2, a fifth resistor R5, a first P-type transistor Q3, a sixth resistor R6, and a seventh resistor R7. The third resistor R3 includes a first terminal, and the second terminal of the third resistor R3 is coupled to the output terminal of the amplifier Q1. The fourth resistor R4 includes a seventh terminal coupled to the fifth terminal of the third resistor R3, and the eighth terminal of the fourth resistor R4 is coupled to the ground terminal. The first N-type transistor Q2 includes a first collector, a first emitter, and a first base. The first emitter is coupled to the ground terminal, and the first base is coupled to the fifth terminal of the third resistor R3. The fifth resistor R5 includes a ninth terminal, and the tenth terminal is coupled to the ground terminal. The first P-type transistor Q3 includes a second emitter, a second collector, and a second base. The second collector is coupled to the ninth terminal of the fifth resistor R5, and the second base is coupled to the first collector of the first N-type transistor Q2. The sixth resistor R6 includes an eleventh terminal coupled to the second emitter of the first P-type transistor Q3. The sixth resistor R6 includes a twelfth terminal coupled to the second base of the first P-type transistor Q3 and the first collector of the first N-type transistor Q2. The seventh resistor R7 includes a thirteenth terminal, and the fourteenth terminal is coupled to the eleventh terminal of the sixth resistor R6. When the comparison circuit 104 outputs a trigger signal, the first N-type transistor Q2 will be turned on, thereby turning on the first P-type transistor Q3 to output a rectified signal. When the power supply exists, the rectified signal will always be activated and will not be turned off.

[0023] In an embodiment, the first N-type transistor Q2 can be a first NPN bipolar junction transistor. The first collector of the first N-type transistor Q2 can be the collector of the first NPN bipolar junction transistor. The first emitter of the first N-type transistor Q2 can be the emitter of the first NPN bipolar junction transistor. The first base of the first N-type transistor Q2 can be the base of the first NPN bipolar junction transistor. The first P-type transistor Q3 can be a first PNP bipolar junction transistor. The second emitter of the first P-type transistor Q3 can be the emitter of the first PNP bipolar junction transistor. The second collector of the first P-type transistor Q3 can be the collector of the first PNP bipolar junction transistor. And the second base of the first P-type transistor Q3 can be the base of the first PNP bipolar junction transistor.

[0024] The switching circuit 108 is coupled to the silicon-controlled rectifier 106. The switching circuit 108 includes a second P-type transistor Q4, an eighth resistor R8, a ninth resistor R9, and a first diode D1. The second P-type transistor Q4 includes a third collector, a third emitter, and a third base. The third base is coupled to the thirteenth terminal of the seventh resistor R7. The eighth resistor R8 includes a fifteenth terminal coupled to the third collector of the second P-type transistor Q4, and the eighth resistor R8 includes a sixteenth terminal coupled to the third base of the second P-type transistor Q4. The ninth resistor R9 includes a seventeenth terminal coupled to the second power supply Vcc1, and the ninth resistor R9 includes an eighteenth terminal coupled to the third emitter of the second P-type transistor Q4. The first diode D1 includes a first cathode coupled to the third emitter of the second P-type transistor Q4, and the first diode D1 includes a first anode coupled to the ground terminal. When the silicon-controlled rectifier 106 outputs a rectified signal, the potential of the third base of the second P-type transistor Q4 will be lower than the potential of the third emitter of the second P-type transistor Q4. Therefore, the second P-type transistor Q4 will be turned on, and the switching circuit 108 will output a switching signal.

[0025] In an embodiment, the second P-type transistor Q4 can be a second PNP bipolar junction transistor. The third emitter of the second P-type transistor Q4 can be the emitter of the second PNP bipolar junction transistor. The third collector of the second P-type transistor Q4 can be the collector of the second PNP bipolar junction transistor. The control terminal of the second P-type transistor Q4 can be the base of the second PNP bipolar junction transistor. The first diode D1 can be a Zener diode.

[0026] The light source circuit 110 is coupled to the switch circuit 108. The light source circuit 110 includes a tenth resistor R10, an eleventh resistor R11, a second N-type transistor Q5, and a light source 202. The light source 202 can be a laser light source. The tenth resistor R10 includes a nineteenth terminal and a twentieth terminal, and the twentieth terminal is coupled to the third collector of the second P-type transistor Q4. The eleventh resistor R11 includes a twenty-first terminal coupled to the shunt node, and the eleventh resistor R11 includes a twenty-second terminal coupled to the third collector of the second P-type transistor Q4. The second N-type transistor Q5 includes a first source, a first drain, and a first gate. The first source is coupled to the ground terminal, and the first gate is coupled to the nineteenth terminal of the tenth resistor R10. One end of the light source 202 is coupled to the first drain of the second N-type transistor Q5, and the other end of the light source 202 is coupled to the ground terminal. When the switch circuit 108 outputs a switching signal, the second N-type transistor Q5 will conduct, and the light source 202 will be short-circuited to the ground terminal, thereby forming the function of a protection circuit. The shunt node is used to provide a low potential to turn off the second N-type transistor Q5 when the second P-type transistor Q4 is turned off. In an embodiment, the second N-type transistor Q5 can be an N-type metal-oxide-semiconductor field-effect transistor. The first drain of the second N-type transistor Q5 can be the drain of the N-type metal-oxide-semiconductor field-effect transistor. The first source of the second N-type transistor Q5 can be the source of the N-type metal-oxide-semiconductor field-effect transistor, and the first gate of the second N-type transistor Q5 can be the gate of the N-type metal-oxide-semiconductor field-effect transistor.

[0027] The driving circuit 112 is coupled to the light source circuit 110. The driving circuit 112 includes a capacitor C1, an inductor L1, a second diode D2, a third P-type transistor Q6, a driving integrated circuit (IC) 204, and a twelfth resistor R12. One end of the capacitor C1 is coupled to the drain of the second N-type transistor Q5, and the other end of the capacitor C1 is coupled to the ground terminal. The inductor L1 is coupled to one end of the capacitor C1. The second diode D2 includes a second cathode and a second anode. The second cathode is coupled to the inductor L1, and the second anode is coupled to the ground terminal. The third P-type transistor Q6 includes a second drain, a second source, and a second gate. The second source is coupled to the second cathode of the second diode D2. The driving integrated circuit 204 includes a first connection terminal, a second connection terminal, a third connection terminal, a fourth connection terminal, an enable terminal, a pulse width modulation (PWM) terminal, and a strobe terminal. The first connection terminal is coupled to the third power supply Vcc, the second connection terminal is coupled to the third power supply Vcc, the third connection terminal is coupled to the first terminal of the third P-type transistor Q6, the fourth connection terminal is coupled to the control terminal of the third P-type transistor Q6, the enable terminal is used to receive an enable signal, the pulse width modulation (PWM) terminal is used to receive a pulse width modulation signal, and the strobe terminal is used to receive a strobe signal. The twelfth resistor R12 includes a twenty-third terminal coupled between the driving integrated circuit 204 and the third power supply Vcc, and the twelfth resistor R12 includes a twenty-fourth terminal coupled between the third connection terminal of the driving integrated circuit 204 and the second drain of the third P-type transistor Q6. The driving circuit 112 is used to provide a driving signal to the light source 202 so that the light source 202 can emit light normally. When the light source 202 is short-circuited to the ground terminal, the driving circuit 112 cannot turn on the light source 202.

[0028] In an embodiment, the third P-type transistor Q6 can be a P-type metal-oxide-semiconductor field-effect transistor. The second drain of the third P-type transistor Q6 can be the drain of the P-type metal-oxide-semiconductor field-effect transistor, the second source of the third P-type transistor Q6 can be the source of the P-type metal-oxide-semiconductor field-effect transistor, and the second gate of the third P-type transistor Q6 can be the gate of the P-type metal-oxide-semiconductor field-effect transistor.

[0029] Through the embodiments of the present invention, when the photosensor 102 senses a light signal that should not be sensed, the silicon-controlled rectifier 106 can be activated. Once the silicon-controlled rectifier 106 is activated, the switch circuit 108 will be activated. During the process of turning on the switch circuit 108, the light source 202 of the light source circuit 110 will be short-circuited to the ground terminal, so that the driving circuit 112 cannot turn on the light source 202, thereby achieving the function of the light hazard protection circuit of the present invention.

[0030] In summary, the adaptive automotive headlamp driving module provided by the present invention includes a light sensor, a comparison circuit, a silicon-controlled rectifier, a switch circuit, a power supply circuit, and a driving circuit. The light sensor is used to output a light sensing signal; the comparison circuit is coupled to the light sensor and is used to output a trigger signal when the light sensing signal is greater than a critical potential; the silicon-controlled rectifier is coupled to the comparison circuit and is used to rectify the trigger signal to generate a rectified signal; the switch circuit is coupled to the silicon-controlled rectifier and is used to generate a switch signal according to the rectified signal; the light source circuit is coupled to the switch circuit and is used to turn on or off the light source of the light source circuit according to the switch signal; the driving circuit is coupled to the light source circuit and is used to provide a driving signal to the light source. Thus, considering the protection circuit against light hazards, the light sensor is installed on an off-axis optical path where the laser light will not irradiate during normal operation, and the laser light source is turned off in a timely manner to achieve the protection effect.

[0031] Although the present invention has been described in conjunction with the accompanying drawings, the embodiments disclosed in the drawings are intended to exemplarily illustrate the preferred embodiments of the present invention and should not be construed as a limitation of the present invention. For clearly describing the required components, the proportions in the schematic drawings do not represent the proportional relationships of the actual components.

[0032] The present invention has been described by the above related embodiments. However, the above embodiments are only examples for implementing the present invention. It must be pointed out that the disclosed embodiments do not limit the scope of the present invention. On the contrary, any changes and modifications made without departing from the spirit and scope of the present invention fall within the scope of the patent protection of the present invention.

Claims

1. An adaptive automotive headlight driving module, characterized in that, Comprising: A light sensor for outputting a light sensing signal; A comparison circuit coupled to the light sensor for outputting a trigger signal when the light sensing signal is greater than a critical potential; A silicon controlled rectifier coupled to the comparison circuit for rectifying the trigger signal to generate a rectified signal; A switch circuit coupled to the silicon controlled rectifier for generating a switch signal according to the rectified signal; A light source circuit coupled to the switch circuit for turning on or off the light source of the light source circuit according to the switch signal; And A drive circuit coupled to the light source circuit for providing a drive signal to the light source.

2. The adaptive vehicle headlight driving module according to claim 1, wherein The comparison circuit includes: An amplifier, including: A positive terminal coupled to the light sensor; A negative terminal; A power supply terminal coupled to a first power supply; and An output terminal; A first resistor, including: A first end coupled to the first power supply; and A second end coupled to the negative terminal of the amplifier; and A second resistor, including: A third end coupled to the negative terminal of the amplifier; and A fourth end coupled to the ground terminal.

3. The adaptive vehicle headlamp driving module according to claim 2, wherein The silicon controlled rectifier includes: A third resistor, including: A fifth end; and A sixth end coupled to the output terminal of the amplifier; A fourth resistor, including: A seventh end coupled to the fifth end of the third resistor; And An eighth end coupled to the ground terminal; A first N-type transistor, including: A first collector; A first emitter coupled to the ground terminal; and A first base coupled to the fifth end of the third resistor; A fifth resistor, including: A ninth end; And A tenth end coupled to the ground terminal; A first P-type transistor, including: A second emitter; A second collector coupled to the ninth end of the fifth resistor; And A second base coupled to the first collector of the first N-type transistor; A sixth resistor, including: An eleventh end coupled to the second emitter of the first P-type transistor; and A twelfth end coupled to the second base of the first P-type transistor; and A seventh resistor, including: A thirteenth end; and A fourteenth end coupled to the eleventh end of the sixth resistor.

4. The adaptive vehicle headlight driving module according to claim 3, wherein The first N-type transistor is a first NPN bipolar junction transistor, the first collector of the first N-type transistor is the collector of the first NPN bipolar junction transistor, the first emitter of the first N-type transistor is the emitter of the first NPN bipolar junction transistor, the first base of the first N-type transistor is the base of the first NPN bipolar junction transistor, the first P-type transistor is a first PNP bipolar junction transistor, the second emitter of the first P-type transistor is the emitter of the first PNP bipolar junction transistor, the second collector of the first P-type transistor is the collector of the first PNP bipolar junction transistor, and the second base of the first P-type transistor is the base of the first PNP bipolar junction transistor.

5. The adaptive vehicle headlight driving module according to claim 3, wherein The switch circuit includes: A second P-type transistor, including: A third emitter; A third collector; and A third base coupled to the thirteenth end of the seventh resistor; An eighth resistor, including: A fifteenth end coupled to the third emitter of the second P-type transistor; and A sixteenth end coupled to the third base of the second P-type transistor; A ninth resistor, including: The seventeenth terminal, coupled to a second power supply; and The eighteenth terminal, coupled to the third emitter of the second P-type transistor; and A first diode, comprising: A first cathode, coupled to the third emitter of the second P-type transistor; and A second anode, coupled to the ground terminal.

6. The adaptive vehicle headlight driving module according to claim 5, wherein The second P-type transistor is a second PNP bipolar junction transistor. The third emitter of the second P-type transistor is the emitter of the second PNP bipolar junction transistor. The third collector of the second P-type transistor is the collector of the second PNP bipolar junction transistor. The base of the second P-type transistor is the base of the second PNP bipolar junction transistor. And the first diode is a Zener diode.

7. The adaptive vehicle headlamp driving module according to claim 5, wherein The light source circuit comprises: A tenth resistor, comprising: A nineteenth terminal; and A twentieth terminal, coupled to the third collector of the second P-type transistor; An eleventh resistor, comprising: A twenty-first terminal, coupled to a shunt node; And A twenty-second terminal, coupled to the third collector of the second P-type transistor; A second N-type transistor, comprising: A first drain; A first source, coupled to the ground terminal; And A gate, coupled to the nineteenth terminal of the tenth resistor; And A light source, with two ends respectively coupled to the first drain of the second N-type transistor and the ground terminal.

8. The adaptive vehicle headlamp driving module according to claim 7, wherein, The second N-type transistor is an N-type metal-oxide-semiconductor field-effect transistor. The first drain of the second N-type transistor is the drain of the N-type metal-oxide-semiconductor field-effect transistor. The first source of the second N-type transistor is the source of the N-type metal-oxide-semiconductor field-effect transistor. And the gate of the second N-type transistor is the gate of the N-type metal-oxide-semiconductor field-effect transistor.

9. The adaptive vehicle headlamp driving module according to claim 7, wherein The driving circuit comprises: A capacitor, comprising: A first terminal, coupled to the first drain of the second N-type transistor; and A second terminal, coupled to the ground terminal; An inductor, comprising: A first terminal; and A second terminal, coupled to the first terminal of the capacitor; A second diode, comprising: A cathode, coupled to the first terminal of the inductor; and An anode, coupled to the ground terminal; A third P-type transistor, comprising: A second source; A second drain, coupled to the cathode of the second diode; and A second gate; A driving integrated circuit, comprising: A first connection terminal, coupled to a third power supply; A second connection terminal, coupled to the third power supply; A third connection terminal, coupled to the second source of the third P-type transistor; A fourth connection terminal, coupled to the second gate of the third P-type transistor; An enable terminal, for receiving an enable signal; A pulse width modulation terminal, for receiving a pulse width modulation signal; And A strobe terminal, for receiving a strobe signal; And A twelfth resistor, comprising: A twenty-third terminal, coupled to the second terminal of the driving integrated circuit; and A twenty-fourth terminal, coupled to the third terminal of the driving integrated circuit.

10. The adaptive vehicle headlight driving module according to claim 9, wherein, The third P-type transistor is a P-type metal-oxide-semiconductor field-effect transistor. The second source of the third P-type transistor is the source of the P-type metal-oxide-semiconductor field-effect transistor. The second drain of the third P-type transistor is the drain of the P-type metal-oxide-semiconductor field-effect transistor. And the second gate of the third P-type transistor is the gate of the P-type metal-oxide-semiconductor field-effect transistor.

Images