Passivation method of large-area perovskite solar cell

Abstract

The invention relates to the technical field of perovskite solar cells, in particular to a passivation method of a large-area perovskite solar cell, which comprises the following steps: depositing a passivation layer on a perovskite light absorption layer, and coating a passivation agent solution on the surface of the perovskite light absorption layer through a slit coating method, drying by using an air knife, and curing to obtain the passivation layer. The surface defects of the perovskite thin film are effectively filled with the passivator solution, carrier recombination at the defects is reduced, the photoelectric property of the thin film is enhanced, the passivator solution is deposited in a slit coating method and air knife drying combined treatment mode, the drying time can be remarkably shortened, the photoelectric conversion efficiency is improved, and the photoelectric property of the thin film is improved. And the uniformity and the stability of the passivation layer are ensured.

Description

Technical Field

[0001] The invention relates to the technical field of perovskite solar cells, and in particular to a passivation method for large-area perovskite solar cells. Background Art

[0002] Perovskite solar cells have attracted widespread attention in the photovoltaic field in recent years due to their high photoelectric conversion efficiency, low cost, light weight and flexibility. Compared with traditional silicon-based solar cells, perovskite materials have excellent light absorption performance, wide bandgap adjustability and low material cost, and have great potential for commercial applications. However, although perovskite materials have achieved excellent photoelectric conversion efficiency performance on a laboratory scale, in large-area preparation, the performance inhomogeneity, surface defects and stability issues of perovskite films are still the main bottlenecks for their commercial application.

[0003] At present, the defects of perovskite films mainly come from grain boundaries, holes, surface defect states, etc. These defects will aggravate the recombination of carriers and increase leakage, thereby significantly reducing the photoelectric conversion efficiency of the battery. On the other hand, perovskite materials are sensitive to environmental factors such as humidity, heat and ultraviolet rays, and are prone to degradation reactions, which makes them unstable and affects their actual service life. Especially when preparing perovskite films on a large scale, due to the complex production process, the formation and distribution of surface defects are difficult to control, and traditional passivation methods are difficult to achieve uniform and efficient passivation treatment in large-area applications. Therefore, how to effectively control the defects of perovskite films in large-area preparations and improve the photoelectric performance and long-term stability of the materials is a technical problem that needs to be solved urgently.

[0004] In terms of perovskite surface passivation, the existing technology mainly relies on chemical passivators to passivate the film surface through spin coating, spraying process, chemical vapor deposition method, and imprinting method. However, the spin method has high requirements for the film area and uniformity, and it is difficult to apply to the passivation treatment of large-area films; although the spraying method can cover a large area, its spraying uniformity is limited, especially when the film surface is uneven, it is difficult to obtain a consistent passivation effect; the chemical vapor deposition method requires high temperature and vacuum conditions, high equipment cost, complex process, and is not conducive to large-scale production; the imprinting method is more effective in the treatment of small-area films, but when applied to large-area films, it is difficult for the mold to apply pressure evenly, resulting in uneven imprinting, and it is easy to produce inconsistent patterns and passivation effects on the surface, which makes it difficult for large-area perovskite films to obtain uniform optoelectronic performance improvement, and requires precise molds and pressure control equipment, the process flow is relatively complicated, and the imprinting process usually takes a long time, which is not suitable for large-scale production applications.

[0005] These methods can be used in small laboratory areas (<1 cm 2)) can show certain effects in perovskite thin films, but in large areas (≥10 cm 2 ), during the preparation of perovskite thin films, uniform passivation treatment remains a difficult problem. At the same time, these traditional passivation methods lack efficiency and stability in industrial applications and are difficult to meet the requirements of large-scale production. Summary of the Invention

[0006] In order to solve the defects existing in the prior art, the present invention provides a passivation method for large-area perovskite solar cells. When preparing the passivation layer, the passivating agent is dissolved in a polar solvent in the passivation method proposed by the present invention. After coating by the slot die coating method, air knife drying is used to achieve uniform and efficient passivation of the surface defects of the large-area perovskite thin film, thereby effectively improving the photoelectric conversion efficiency and long-term stability.

[0007] To achieve the above object, the present invention adopts the following technical solutions:

[0008] In the first aspect, the present invention provides a passivation method for large-area perovskite solar cells, including: depositing a passivation layer on a perovskite light-absorbing layer, where the passivation layer is obtained by coating a passivating agent solution on the surface of the perovskite light-absorbing layer by the slot die coating method and then curing after air knife drying.

[0009] Preferably, the passivating agent is selected from any one or several of passivating small molecules containing groups such as amino, carboxyl, thiol, and fluorine.

[0010] Preferably, the passivating agent is selected from any one or several of phenethylammonium iodide, benzylammonium iodide, 1-ethyl-3-methylimidazolium tetrafluoroborate, n-butylammonium iodide, 3-mercaptopropionic acid, phenethylamine salt, and pentafluorobenzoic acid.

[0011] Preferably, the solvent in the passivating agent solution is selected from any one or several of polar solvents such as alcohols, ethers, and esters.

[0012] Preferably, the solvent in the passivating agent solution is selected from any one or several of isopropyl alcohol, ethyl acetate, acetone, and acetonitrile.

[0013] Preferably, the concentration of the passivating agent solution is 0.2 - 2 mg / mL. Exemplarily, the concentration of the passivating agent solution is any value between 0.2 mg / mL, 0.3 mg / mL, 0.5 mg / mL, 1 mg / mL, and 2 mg / mL or between any two of them.

[0014] Preferably, the air knife angle for air knife drying is set to 15 - 45°. Exemplarily, the air knife angle is set to any value between 15°, 30°, 40°, and 45° or between any two of them.

[0015] Preferably, the air flow velocity for air knife drying is 5 to 15 m / s. Exemplarily, the air flow velocity is any one of 5 m / s, 6 m / s, 10 m / s, 15 m / s or a value between any two of them.

[0016] Preferably, the air pressure for air knife drying is 0.03 to 0.15 Mpa. Exemplarily, the air pressure is any one of 0.03 MPa, 0.05 MPa, 0.1 MPa, 0.15 MPa or a value between any two of them.

[0017] Preferably, the drying temperature for air knife drying is 25 to 30 °C.

[0018] Preferably, the drying time for air knife drying is 1 to 7 seconds. Exemplarily, the drying time is any one of 1 second, 2 seconds, 3 seconds, 7 seconds or a value between any two of them.

[0019] In a second aspect, the present invention provides a method for preparing a large-area perovskite solar cell, including the above passivation method.

[0020] Preferably, the preparation method further includes cleaning the transparent conductive substrate layer, preparing an electron transport layer, preparing a hole transport layer, preparing a perovskite light-absorbing layer, and preparing a metal electrode.

[0021] Preferably, the preparation method includes the following steps:

[0022] S1. Cleaning the transparent conductive substrate:

[0023] S2. Depositing an electron transport layer or a hole transport layer on the transparent conductive substrate;

[0024] S3. Depositing a perovskite light-absorbing layer on the electron transport layer or the hole transport layer described in S2;

[0025] S4. Depositing a passivation layer on the perovskite light-absorbing layer described in S3, where the passivation layer is obtained by coating a passivating agent solution on the surface of the perovskite light-absorbing layer by slit coating method and then drying and curing it with an air knife;

[0026] S5. Depositing a hole transport layer or an electron transport layer on the passivation layer described in S4;

[0027] S6. Depositing a metal electrode on the hole transport layer or the electron transport layer described in S5.

[0028] Preferably, the transparent conductive substrate material is selected from any one of FTO (fluorine-doped tin oxide), ITO (indium tin oxide), flexible ITO / PEN (polyethylene terephthalate), AZO (aluminum-doped zinc oxide), and GZO (gallium-doped zinc oxide).

[0029] Preferably, the electron transport layer material or hole transport layer material is deposited on the transparent conductive substrate by any one of dip coating, spray coating, blade coating, thermal evaporation, electron beam evaporation, magnetron sputtering, chemical vapor deposition, atomic layer deposition, etc., and annealed at 100-250 °C for 30-60 minutes. The thickness of the obtained thin film is 20-50 nm, and the specific thickness can be adjusted according to the device requirements.

[0030] Preferably, the material of the electron transport layer is selected from any one of titanium dioxide (TiO2), tin oxide (SnO2), zinc oxide (ZnO), C 60 , PCBM.

[0031] Preferably, the material of the hole transport layer is selected from any one of nickel oxide (NiO X ), PEDOT:PSS, Spiro-OMeTAD, tBP, Li-TFSI, PTAA, P3HT, CuSCN, CuI, graphene, carbon nanotubes.

[0032] Preferably, the material of the perovskite light-absorbing layer is selected from MAPbI x Br y Cl 3-x-y , FAPbI x Br y Cl 3-x-y , CsPbI x Br y Cl 3-x-y , Cs z FA 1-z PbIxBr y Cl 3-x-y , Cs z FA k MA 1-z-k PbI x Br y Cl 3-x-y , (FAPbI3) x (MAPbBr3) 1-x ; wherein, x = 0-3, y = 0-3, z = 0-3, k = 0-3.

[0033] Preferably, the metal electrode layer is deposited by methods such as thermal evaporation, electron beam evaporation, sputtering, printing, etc.

[0034] Preferably, the material of the metal electrode is selected from any one of gold, silver, copper, aluminum, nickel, carbon-based materials, or their alloys and composite materials to meet the comprehensive requirements of conductivity, stability and cost.

[0035] In a third aspect, the present invention provides a large-area perovskite solar cell prepared by the above preparation method.

[0036] The beneficial effects of the present invention are as follows:

[0037] During the passivation process of the present invention, a passivating agent solution is used to effectively fill the surface defects of the perovskite thin film, reduce the carrier recombination at the defects, enhance the optoelectronic properties of the thin film. The passivating agent solution is deposited in the form of a combination of slot coating and air knife drying. The air knife drying can quickly evaporate the solvent of the passivating agent solution through a high-speed air flow, thereby rapidly forming a stable passivation layer. This drying method uses room-temperature air flow for drying without additional heating, which can not only significantly shorten the drying time, improve the production efficiency, but also reduce the risk of material degradation caused by heat, avoid the redistribution or flow of the passivating agent on the surface, and ensure the uniformity and stability of the passivation layer. The combination of the coating equipment and air knife drying can be applied to the passivation treatment of large-area perovskite thin films and can meet the requirements of large-scale industrial production. The coating equipment and air knife drying system are easy to adjust and expand, can adapt to perovskite thin films of different sizes and different shapes, and are more flexible and adaptable in large-scale applications.

[0038] The solvent of the passivating solution adopted by the present invention has good compatibility with the perovskite material, can effectively dissolve the passivating agent, has high volatility, helps with subsequent rapid drying, and will not cause damage to the perovskite thin film. Combined with the air knife drying technology, this passivation process can enhance its optoelectronic properties and durability without affecting the original structure of the thin film.

[0039] By reasonably controlling the parameters of air knife drying, the present invention quickly dries the coated passivating agent solution to prevent the thermal degradation of the perovskite material under high-temperature conditions, uniformly passivates the defects on the surface of the large-area perovskite thin film, effectively reduces the ineffective energy loss and carrier recombination caused by surface defects, and improves the optoelectronic conversion efficiency of the thin film. At the same time, the uniform passivation layer can effectively block the erosion of external water vapor, oxygen, etc. to the perovskite, improve the environmental resistance and long-term stability of the material, and is suitable for application in outdoor photovoltaic modules. The drying time is controlled within 1 to 7 seconds to ensure the rapid curing of the passivating agent solution and the formation of a uniform passivation layer. This drying process avoids the flow and redistribution of the solution and ensures the uniformity and stability of the passivation layer.

[0040] The preparation method and device structure of the present invention are applicable to various perovskite solar cells, including planar heterojunctions, mesoporous structures, inverted structures, etc., and have broad application prospects. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] Figure 1 It is the current density-voltage curve graph of the perovskite solar cells prepared in Example 1 and Comparative Example 1.

[0042] Figure 2It is the current density-voltage curve graph of the perovskite solar cells prepared in Example 2 and Comparative Example 1.

[0043] Figure 3 It is the current density-voltage curve graph of the perovskite solar cells prepared in Example 3 and Comparative Example 1.

[0044] Figure 4 It is the current density-voltage curve graph of the perovskite solar cells prepared in Example 4 and Comparative Example 1.

[0045] Figure 5 It is the current density-voltage curve graph of the perovskite solar cells prepared in Example 5 and Comparative Example 1.

[0046] Figure 6 It is the current density-voltage curve graph of the perovskite solar cells prepared in Example 6 and Comparative Example 1.

[0047] Figure 7 It is the current density-voltage curve graph of the perovskite solar cells prepared in Example 7 and Comparative Example 1.

[0048] Figure 8 It is the current density-voltage curve graph of the perovskite solar cells prepared in Example 8 and Comparative Example 1.

[0049] Figure 9 It is the current density-voltage curve graph of the perovskite solar cells prepared in Example 9 and Comparative Example 1. Detailed implementation manners

[0050] In order to enable those skilled in the art to better understand the technical solution of the invention, the present invention will be further described in detail below in conjunction with the specific implementation manners.

[0051] Example 1

[0052] This example provides a passivation method for large-area perovskite solar cells, including the following steps:

[0053] S1. Clean the transparent conductive substrate: Take an ITO conductive glass substrate with a size of 10 cm × 10 cm, perform ultrasonic cleaning, put the substrate into deionized water containing about 2% dishwashing liquid and ultrasonically clean for 15 minutes to remove oil stains and particulate matters on the surface; then thoroughly rinse the substrate with deionized water to ensure no residual detergent; then put the substrate into anhydrous ethanol and anhydrous isopropanol in sequence, and ultrasonically clean for 10 minutes in each solvent to remove organic pollution; after cleaning, dry the surface of the substrate with high-purity nitrogen and perform ultraviolet ozone treatment for 15 minutes to increase surface hydrophilicity and promote uniform deposition of subsequent films.

[0054] S2. Preparation of the electron transport layer: SnO2 was deposited on the ITO substrate by atomic layer deposition to ensure the film uniformity and compactness. After annealing treatment at 170 °C for 30 minutes, the formed SnO2 electron transport layer had a thickness of about 30 nm, with excellent electron transport characteristics and interface flatness.

[0055] S3. Preparation of the perovskite light-absorbing layer: 1.8 mmol of PbI2 (0.828 g) and 1.8 mmol of methylammonium iodide CH3NH3I (0.288 g) were dissolved in 1 mL of a mixed solvent of DMF (N,N-dimethylformamide) and DMSO (N,N-dimethyl sulfoxide) (volume ratio 4:1). The solution was stirred at room temperature for 1 hour until a clear perovskite precursor solution was obtained. It was filtered using a 0.45 μm filter membrane, and then the precursor solution was deposited on the electron transport layer by slot-die coating. After coating, the substrate was placed on a hot plate at 150 °C and annealed for 10 minutes to form a perovskite light-absorbing layer with a thickness of about 500 nm.

[0056] S4. Preparation of the passivation layer: IPA (isopropyl alcohol) with good solubility was used as the solvent to dissolve PEAI (phenethylammonium iodide) to prepare a passivation agent solution with a concentration of 2 mg / mL. 400 μL of the passivation agent solution was evenly coated on the surface of the perovskite film by slot-die coating at a coating speed of 60 mm / s and a coating height of 100 μm. It was dried using a air knife with the air knife angle set at 30°, the air flow rate at 10 m / s, the air pressure at 0.1 MPa, the distance between the air knife and the coating die head at 5 cm, the drying temperature at 25 °C, and the drying time at 2 seconds to ensure that the passivation agent was uniformly cured in a short time to form a dense passivation layer and reduce the defects on the perovskite surface.

[0057] S5. Preparation of the hole transport layer: 72.3 mg of Spiro-OMeTAD was dissolved in 1 mL of chlorobenzene, 28.8 μL of tBP and 17.5 μL of Li-TFSI solution were added. After stirring at room temperature for 30 minutes, the solution was dropped on the passivation layer and spin-coated at a speed of 3000 rpm for 30 seconds to form a hole transport layer with a thickness of about 150 nm. Then, the device was placed in an environment with a relative humidity of about 20% and left standing for 12 hours to allow Spiro-OMeTAD to undergo oxidative doping.

[0058] S6. Preparation of the metal electrode: The sample after oxidation in S5 was fixed on the sample stage of the vacuum evaporation equipment. The vacuum was reduced to better than 5×10 -4 Pa, and a silver electrode with a thickness of 100 nm was deposited by thermal evaporation process. After cooling to room temperature, it was taken out, cut into small pieces for testing.

[0059] The test was carried out under an AM 1.5G solar simulator with a light intensity of 100 mW / cm2 The test equipment was a Keithley 2400 source meter. The test results were as follows: short-circuit current density (Jsc): 24.07 mA / cm 2 open-circuit voltage (Voc): 1.144 V, fill factor (FF): 75.41%, power conversion efficiency (PCE): 20.77%; after the device was stored in the dark in an air environment with a relative humidity of 50% RH for 500 hours, the PCE remained at 90% of the initial value.

[0060] Example 2

[0061] Same as Example 1, the difference is only that in the preparation process of the S4 passivation layer, the air knife drying parameters were: air knife angle: 30°, air flow rate: 5 m / s, air pressure: 0.05 Mpa, the air knife was 5 cm away from the coating head, the drying temperature was 25 °C, and the drying time was 3 seconds.

[0062] Test results: short-circuit current density (Jsc): 24.01 mA / cm 2 open-circuit voltage (Voc): 1.100 V, fill factor (FF): 72.47%, power conversion efficiency (PCE): 19.15%. After the device was stored in an air environment with a relative humidity of about 50% for 500 hours, the PCE remained at 88% of the initial value.

[0063] Example 3

[0064] Same as Example 1, the difference is only that in the preparation process of the S4 passivation layer, the passivation agent solution was prepared as follows: PMAI (benzylamine iodide) was dissolved in ethyl acetate solvent to obtain a 2 mg / mL passivation agent solution.

[0065] Test results: short-circuit current density (Jsc): 24.80 mA / cm 2 open-circuit voltage (Voc): 1.096 V, fill factor (FF): 73.90%, power conversion efficiency (PCE): 20.11%. After the device was stored in an air environment with a relative humidity of about 50% for 500 hours, the PCE remained at 95% of the initial value.

[0066] Example 4

[0067] Same as Example 1, the difference is only that in the preparation process of the S4 passivation layer, the passivation agent solution was prepared as follows: 1-ethyl-3-methylimidazolium tetrafluoroborate (EMIMBF4) was dissolved in isopropanol (IPA) at a concentration of 1 mg / mL.

[0068] Test results: short-circuit current density (Jsc): 24.92 mA / cm 2, Open-circuit voltage (Voc): 1.133 V, fill factor (FF): 77.43%, photoelectric conversion efficiency (PCE): 21.87%. After the device was stored in an air environment with a relative humidity of about 50% for 500 hours, the PCE remained at 92% of the initial value.

[0069] Example 5

[0070] Same as Example 1, the only difference is that during the preparation of the S4 passivation layer, the air knife angle during air knife drying is set to 15°.

[0071] Test results: Short-circuit current density (Jsc): 24.54 mA / cm 2 , Open-circuit voltage (Voc): 1.167 V, fill factor (FF): 76.61%, photoelectric conversion efficiency (PCE): 21.96%. After the device was stored in an air environment with a relative humidity of about 50% for 500 hours, the PCE remained at 90% of the initial value.

[0072] Example 6

[0073] Same as Example 1, the only difference is that during the preparation of the S4 passivation layer, the passivation agent solution is prepared as follows: Dissolve BAI (n-butylamine iodide) in acetone solvent to obtain a passivation agent solution with a concentration of 1 mg / mL; the air knife drying parameters are: the air knife angle is 40°, the air flow rate is 15 m / s, the air pressure is 0.15 Mpa, the air knife is 5 cm away from the coating head, the drying temperature is 25 °C, and the drying time is 1 second.

[0074] Test results: Short-circuit current density (Jsc): 24.62 mA / cm 2 , Open-circuit voltage (Voc): 1.168 V, fill factor (FF): 82.50%, photoelectric conversion efficiency (PCE): 23.73%. After the device was stored in an air environment with a relative humidity of about 50% for 500 hours, the PCE remained at 90% of the initial value.

[0075] Example 7

[0076] Same as Example 1, the only difference is that during the preparation of the S4 passivation layer, the passivation agent solution is prepared as follows: Dissolve 3-mercaptopropionic acid in isopropanol to prepare a passivation agent solution with a concentration of 0.2 mg / ml; the air knife drying parameters are: the air knife angle is 45 °C, the air flow rate is 6 m / s, the air pressure is 0.03 Mpa, the air knife is 5 cm away from the coating head, the drying temperature is 30 °C, and the drying time is 7 seconds.

[0077] Detection results: Short-circuit current density (Jsc): 24.82 mA / cm 2, Open - circuit voltage (Voc): 1.154 V, fill factor (FF): 80.78%, photoelectric conversion efficiency (PCE): 23.15%. After the device is stored in an air environment with a relative humidity of about 50% for 500 hours, the PCE remains at 95% of the initial value.

[0078] Example 8

[0079] Same as Example 1, the difference is only that in the preparation process of the S4 passivation layer, the passivating agent solution is prepared as follows: Dissolve the phenylamine salt in acetonitrile to prepare a passivating agent solution with a concentration of 0.3 mol / L; the air knife drying parameters are: the air knife angle is 45 °C, the air flow rate is 6 m / s, the air pressure is 0.03 Mpa, the air knife is 5 cm away from the coating head, the drying temperature is 30 °C, and the drying time is 7 seconds.

[0080] Test results: Short - circuit current density (Jsc): 24.66 mA / cm 2 , Open - circuit voltage (Voc): 1.155 V, fill factor (FF): 80.09%, photoelectric conversion efficiency (PCE): 22.82%. After the device is stored in an air environment with a relative humidity of about 50% for 500 hours, the PCE remains at 88% of the initial value.

[0081] Example 9

[0082] Same as Example 1, the difference is only that in the preparation process of the S4 passivation layer, the passivating agent solution is prepared as follows: Dissolve pentafluorobenzoic acid in isopropanol solvent to prepare a passivating agent solution with a concentration of 0.5 mg / mL.

[0083] Test results: Short - circuit current density (Jsc): 25.23 mA / cm 2 , Open - circuit voltage (Voc): 1.157 V, fill factor (FF): 82.30%, photoelectric conversion efficiency (PCE): 24.04%. After the device is stored in an air environment with a relative humidity of about 50% for 500 hours, the PCE remains at 88% of the initial value.

[0084] Comparative Example 1

[0085] Same as Example 1, the difference is only that there is no preparation step for the S4 passivation layer.

[0086] From Figures 1 to 9From the comparison of the current density-voltage curves of Examples 1 to 9 and Comparative Example 1, it can be seen that compared with Comparative Example 1, in the process of preparing large-area perovskite solar cells, a passivating agent is added, and the deposition is carried out in the form of a combination of slot coating and air knife drying. The solvent of the passivating solution adopted by the present invention has good compatibility with the perovskite material, can effectively dissolve the passivating agent, and has high volatility, which is helpful for subsequent rapid drying and will not damage the perovskite film. Combining with the air knife drying technology, it can uniformly passivate the defects on the surface of the large-area perovskite film, effectively reduce the ineffective energy loss and carrier recombination caused by surface defects, and improve the photoelectric conversion efficiency of the film.

[0087] The above are only the preferred embodiments of the present invention. It should be noted that the above preferred embodiments should not be regarded as limiting the present invention. The protection scope of the present invention should be subject to the scope defined by the claims. For those of ordinary skill in the art of this technology, without departing from the spirit and scope of the present invention, several improvements and retouches can still be made, and these improvements and retouches should also be regarded as the protection scope of the present invention.

Claims

1. A passivation method for large-area perovskite solar cells, characterized in that, Comprising: Depositing a passivation layer on the perovskite light-absorbing layer, where the passivation layer is obtained by coating a passivation agent solution on the surface of the perovskite light-absorbing layer by slit coating method and then drying with an air knife and curing.

2. The passivation method according to claim 1, characterized in that, The passivation agent is selected from any one or several of passivation small molecules containing groups such as amino group, carboxyl group, mercapto group, fluorine, etc.

3. The passivation method according to claim 2, characterized in that, The solvent in the passivation agent solution is selected from any one or several of polar solvents such as alcohols, ethers, esters, etc.

4. The passivation method according to claim 1, characterized in that, The concentration of the passivation agent solution is 0.2 - 2 mg / mL.

5. The passivation method according to any one of claims 1 to 4, characterized in that, The air knife angle for the air knife drying is set to 15 - 45°.

6. The passivation method according to any one of claims 1 to 4, characterized in that, The air flow rate for the air knife drying is 5 - 15 m / s.

7. The passivation method according to any one of claims 1 to 4, characterized in that The drying time for the air knife drying is 1 - 7 seconds.

8. A method for preparing a large-area perovskite solar cell, characterized in that, Including the passivation method according to any one of claims 1 - 7.

9. The preparation method according to claim 8, characterized in that, Also including cleaning the transparent conductive substrate layer, preparing the electron transport layer, preparing the hole transport layer, preparing the perovskite light-absorbing layer, and preparing the metal electrode.

10. A large-area perovskite solar cell prepared by the preparation method according to claim 8 or 9.

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