Epitaxial growth system and method

Abstract

The invention relates to the technical field of epitaxial growth, and particularly provides an epitaxial growth system and method. A lower half-moon graphite cavity; a tray; a first temperature measuring assembly; a reaction gas inlet assembly; a plurality of exhaust assemblies; the controller is used for analyzing whether a temperature measurement area with abnormal temperature exists or not according to the actual temperature information and a preset target temperature in the epitaxial growth process, and is also used for obtaining an air inlet regulating quantity according to a deviation value between the actual temperature information and the target temperature when the temperature measurement area with the abnormal temperature exists; then the air inlet amount of the air inlet unit corresponding to the temperature measuring area with the abnormal temperature is adjusted according to the air inlet adjusting amount, and the exhaust proportion of each exhaust assembly is adjusted according to the minimum distance between the temperature measuring area with the abnormal temperature and each exhaust assembly; according to the system, the temperature field in the reaction cavity can be uniformly distributed under the condition that the uniformity of the gas flow field in the reaction cavity is not influenced.

Description

Technical Field

[0001] This application relates to the technical field of epitaxial growth, and more specifically, to an epitaxial growth system and method. Background Art

[0002] During the epitaxial growth process, the temperature field distribution in the reaction chamber may be uneven under the influence of factors such as gas flow. The uneven temperature field distribution in the reaction chamber will lead to uneven temperature distribution of the epitaxial wafer. Since the temperature of the epitaxial wafer is related to the growth quality of the epitaxial layer, and the related technology cannot perform zoning temperature adjustment on the reaction chamber, there is a problem that when the temperature field distribution in the reaction chamber is uneven, the temperature distribution of the epitaxial wafer is uneven due to the inability to perform zoning temperature adjustment on the reaction chamber, and finally the growth quality of the formed epitaxial layer has poor consistency.

[0003] In response to the above problems, there is currently no effective technical solution. It should be noted that the above information disclosed in this part is only used to understand the background of the inventive concept, and therefore may include information that does not constitute prior art. Summary of the Invention

[0004] The purpose of this application is to provide an epitaxial growth system and method, which can effectively solve the problem that when the temperature field distribution of the epitaxial wafer is uneven, the temperature distribution of the epitaxial wafer is uneven due to the inability to perform zoning temperature adjustment on the reaction chamber, and finally the growth quality of the formed epitaxial layer has poor consistency.

[0005] In a first aspect, this application provides an epitaxial growth system, which includes: Upper half graphite cavity; Lower half graphite cavity, which forms a reaction chamber with the upper half graphite cavity, and the reaction chamber is horizontally divided into multiple temperature measurement regions; Carrier plate, located in the reaction chamber, for carrying the epitaxial wafer; First temperature measurement component, arranged outside the reaction chamber, for measuring the actual temperature information corresponding to each temperature measurement region; Reaction gas inlet component, arranged on the upper half graphite cavity, which includes multiple inlet units, and each temperature measurement region corresponds to at least one inlet unit that discharges gas vertically downward; Multiple exhaust components, symmetrically arranged on both sides of the reaction chamber; A controller, which is configured to control a reaction gas inlet assembly to supply reaction gas to a reaction chamber and control all exhaust assemblies to exhaust synchronously during an epitaxial growth process, analyze whether there is a temperature-abnormal temperature measurement area according to actual temperature information and a preset target temperature, and is further configured to, when there is a temperature-abnormal temperature measurement area, obtain an intake air adjustment amount according to a deviation value between the actual temperature information and the target temperature, then adjust the intake air amount of an intake unit corresponding to the temperature-abnormal temperature measurement area according to the intake air adjustment amount, and adjust the exhaust ratio of each exhaust assembly according to the minimum distance between the temperature-abnormal temperature measurement area and each exhaust assembly.

[0006] An epitaxial growth system provided by the present application can achieve a uniform temperature field distribution in the reaction chamber without affecting the gas flow field uniformity in the reaction chamber through the cooperation of a first temperature measurement assembly, an intake unit and an exhaust assembly, that is, the present application can achieve zone temperature control of an epitaxial wafer by means of zone temperature control of the reaction chamber and make the temperature distribution of the epitaxial wafer uniform by making the temperature field distribution in the reaction chamber uniform. Therefore, the present application can effectively solve the problem that the temperature distribution of the epitaxial wafer is uneven because the reaction chamber cannot be zone temperature controlled when the temperature field distribution of the epitaxial wafer is uneven, and finally the growth quality consistency of the formed epitaxial layer is poor.

[0007] Optionally, when the number of temperature-abnormal temperature measurement areas is one, the process of obtaining an intake air adjustment amount according to a deviation value between the actual temperature information and the target temperature includes: A1. Calculate a temperature deviation value according to the actual temperature information and the target temperature corresponding to the temperature-abnormal temperature measurement area, and then obtain an intake air adjustment amount according to the temperature deviation value and a first preset conversion relationship; The controller is further configured to, for each temperature-normal temperature measurement area, obtain a first temperature influence amount according to the intake air adjustment amount, the minimum distance between it and the temperature-abnormal temperature measurement area, and a second preset conversion relationship, and obtain an intake air compensation amount according to the first temperature influence amount and a third preset conversion relationship; The process of adjusting the intake air amount of the intake unit corresponding to the temperature-abnormal temperature measurement area according to the intake air adjustment amount includes: Adjust the intake air amount of the intake unit corresponding to the corresponding temperature-abnormal temperature measurement area according to the intake air adjustment amount, and adjust the intake air amount of the intake unit corresponding to the corresponding temperature-normal temperature measurement area according to the intake air compensation amount.

[0008] Since the reaction gas entering the reaction chamber diffuses in all directions, when adjusting the intake air volume of the intake air unit corresponding to the temperature measurement area with abnormal temperature according to the intake air adjustment amount, the air flow rate in the temperature measurement area with normal temperature will change to a certain extent. This change in the air flow rate will cause the temperature in the temperature measurement area with normal temperature to change. And this technical solution can quantify the influence of adjusting the intake air volume of the temperature measurement area with abnormal temperature on the temperature in the temperature measurement area with normal temperature by obtaining the first temperature influence amount according to the intake air adjustment amount, its minimum distance from the temperature measurement area with abnormal temperature, and the second preset conversion relationship, and eliminate the influence of adjusting the intake air volume of the temperature measurement area with abnormal temperature on the temperature in the temperature measurement area with normal temperature by obtaining the intake air compensation amount according to the first temperature influence amount and the third preset conversion relationship and adjusting the intake air volume of the corresponding intake air unit according to the intake air compensation amount. Therefore, this technical solution can effectively avoid the situation that the temperature measurement area with normal temperature is transformed into a temperature measurement area with abnormal temperature due to the influence of adjusting the intake air volume of the temperature measurement area with abnormal temperature on the temperature in the temperature measurement area with normal temperature, that is, this technical solution can effectively improve the accuracy and reliability of temperature adjustment, thereby effectively improving the temperature field uniformity in the reaction chamber and the temperature distribution uniformity of the epitaxial wafer, and further effectively improving the growth quality consistency of the epitaxial layer.

[0009] Optionally, the intake air unit includes an intake air channel and an air outlet plate. The two ends of the intake air channel are respectively connected to the reaction gas supply component and the air outlet plate. A first flow rate adjustment component for adjusting the flow rate of the reaction gas is provided on the intake air channel, and a first air outlet hole is provided at the center of the air outlet plate.

[0010] Optionally, a plurality of second air outlet holes are further provided on the air outlet plate, and the plurality of second air outlet holes are circumferentially arrayed outside the first air outlet hole.

[0011] Since a plurality of second air outlet holes are circumferentially arrayed outside the outer circumference of the first air outlet hole in this technical solution, that is, this technical solution is equivalent to converting the air outlet mode from single-center air outlet to multi-point dispersed air outlet. Therefore, this technical solution can make the reaction gas diffuse into the reaction chamber better and more evenly, so as to avoid the situation of too high or too low local gas concentration, thereby effectively improving the gas concentration distribution uniformity, and further effectively avoiding the situation that the growth quality of the epitaxial layer in different regions is inconsistent due to the influence of the gas concentration distribution uniformity.

[0012] Optionally, the installation height of the intake port of the exhaust component is greater than the height of the bottom of the reaction chamber.

[0013] Since graphite debris or dust may accumulate at the bottom of the reaction chamber, and the installation height of the air inlet of the exhaust assembly is set to be greater than the height of the bottom of the reaction chamber in this technical solution, this technical solution can effectively reduce the situation where the exhaust assembly inhales graphite debris or dust, thereby effectively reducing the situation where the exhaust efficiency of the exhaust assembly decreases, the exhaust assembly is damaged or even damaged due to the exhaust assembly inhaling graphite debris or dust, and further effectively reducing the situation where the gas flow field uniformity and the growth quality of the epitaxial layer in the reaction chamber are affected due to the decrease in the exhaust efficiency of some exhaust assemblies.

[0014] Optionally, the epitaxial growth system further includes a rotation assembly, which is arranged on the lower half graphite cavity body, and the rotation assembly is used to drive the carrier plate to rotate.

[0015] Optionally, the rotation assembly includes an air bearing channel and an air bearing gas supply assembly. The air bearing channel is arranged in the lower half graphite cavity body. The air bearing channel has a plurality of air outlets located directly below the carrier plate and arranged in a circumferential array along the axis of the carrier plate. The extension direction of the air outlet forms an angle of 30°-60° with the bottom surface of the carrier plate. The air inlet of the air bearing channel is connected to the air bearing gas supply assembly through a second flow rate regulating assembly.

[0016] Optionally, the epitaxial growth system further includes a second temperature measurement assembly, which is used to measure the cavity temperature information of the lower half graphite cavity body. The controller is further used to generate an alarm message when there is no temperature abnormal temperature measurement area and the difference between the actual temperature information and the cavity temperature information exceeds the first preset range.

[0017] Optionally, the epitaxial growth system further includes a confluence pipeline and a tail gas treatment assembly. The two ends of the confluence pipeline are respectively connected to the air outlets of all exhaust assemblies and the tail gas treatment assembly. A butterfly valve is provided on the confluence pipeline.

[0018] In a second aspect, the present application also provides an epitaxial growth method, which is applied to an epitaxial growth system provided in the first aspect above. The epitaxial growth method includes the following steps: S1. During the epitaxial growth process, control the reaction gas inlet assembly to supply reaction gas to the reaction chamber and control all exhaust assemblies to exhaust synchronously, and analyze whether there is a temperature abnormal temperature measurement area according to the actual temperature information and the preset target temperature; S2. When there is a temperature abnormal temperature measurement area, obtain the intake air adjustment amount according to the deviation value between the actual temperature information and the target temperature, then adjust the intake air amount of the intake air unit corresponding to the temperature abnormal temperature measurement area according to the intake air adjustment amount, and adjust the exhaust ratio of each exhaust assembly according to the minimum distance between the temperature abnormal temperature measurement area and each exhaust assembly.

[0019] An epitaxial growth method provided by the present application can achieve a uniform temperature field distribution in the reaction chamber without affecting the gas flow field uniformity in the reaction chamber through the cooperation of the first temperature measurement component, the gas inlet unit, and the exhaust component. That is, the present application can achieve zone temperature control of the epitaxial wafer by zoning the temperature of the reaction chamber and make the temperature distribution of the epitaxial wafer uniform by making the temperature field distribution in the reaction chamber uniform. Therefore, the present application can effectively solve the problem that the temperature distribution of the epitaxial wafer is uneven due to the inability to perform zone temperature control on the reaction chamber when the temperature field distribution of the epitaxial wafer is uneven, resulting in poor consistency in the growth quality of the finally formed epitaxial layer.

[0020] As can be seen from the above, an epitaxial growth system and method provided by the present application can achieve a uniform temperature field distribution in the reaction chamber without affecting the gas flow field uniformity in the reaction chamber through the cooperation of the first temperature measurement component, the gas inlet unit, and the exhaust component. That is, the present application can achieve zone temperature control of the epitaxial wafer by zoning the temperature of the reaction chamber and make the temperature distribution of the epitaxial wafer uniform by making the temperature field distribution in the reaction chamber uniform. Therefore, the present application can effectively solve the problem that the temperature distribution of the epitaxial wafer is uneven due to the inability to perform zone temperature control on the reaction chamber when the temperature field distribution of the epitaxial wafer is uneven, resulting in poor consistency in the growth quality of the finally formed epitaxial layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 It is a schematic structural diagram of an epitaxial growth system provided by an embodiment of the present application.

[0022] Figure 2 It is a schematic cross-sectional structure diagram of the upper half graphite cavity and the lower half graphite cavity provided by an embodiment of the present application.

[0023] Figure 3 It is a schematic structural diagram of multiple gas inlet units provided by an embodiment of the present application.

[0024] Figure 4 It is a schematic control relationship diagram of an epitaxial growth system provided by an embodiment of the present application.

[0025] Figure 5 It is a flowchart of an epitaxial growth method provided by an embodiment of the present application.

[0026] Reference numerals: 1, upper half graphite cavity; 2, lower half graphite cavity; 3, reaction chamber; 4, carrier tray; 5, first temperature measurement component; 6, gas inlet unit; 61, gas inlet channel; 62, outlet plate; 7, exhaust component; 8, controller; 9, pneumatic valve; 10, mass flowmeter; 11, first air outlet hole; 12, second air outlet hole; 13, rotation component; 131, air floating channel; 132, air outlet; 14, confluence pipeline; 15, tail gas treatment component; 16, butterfly valve. Detailed implementation manners

[0027] The following will clearly and completely describe the technical solutions in the embodiments of the present application with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. The components of the embodiments of the present application described and shown in the accompanying drawings here can be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of the present application provided in the accompanying drawings is not intended to limit the scope of the present application to be protected, but only represents the selected embodiments of the present application. All other embodiments obtained by those skilled in the art based on the embodiments of the present application without creative efforts belong to the scope of protection of the present application.

[0028] It should be noted that similar reference numerals and letters indicate similar items in the following drawings. Therefore, once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings. At the same time, in the description of the present application, the terms "first", "second", etc. are only used for distinguishing descriptions and cannot be understood as indicating or implying relative importance.

[0029] In the first aspect, as Figures 1 - 4 shown, the present application provides an epitaxial growth system, which includes: The upper half graphite cavity 1; The lower half graphite cavity 2, which forms a reaction chamber 3 with the upper half graphite cavity 1, and the reaction chamber 3 is horizontally divided into multiple temperature measurement regions; The carrier plate 4, which is located in the reaction chamber 3 and is used to carry the epitaxial wafer; The first temperature measurement component 5, which is arranged outside the reaction chamber 3 and is used to measure the actual temperature information corresponding to each temperature measurement region; The reaction gas inlet component, which is arranged on the upper half graphite cavity 1 and includes multiple inlet units 6, and at least one inlet unit 6 with a vertically downward outlet corresponds to each temperature measurement region; Multiple exhaust components 7, which are symmetrically arranged on both sides of the reaction chamber 3; The controller 8 is used to control the reaction gas inlet component to supply reaction gas to the reaction chamber 3 and control all the exhaust components 7 to exhaust synchronously during the epitaxial growth process, and analyze whether there is a temperature measurement region with temperature abnormality according to the actual temperature information and the preset target temperature. It is also used to obtain the intake adjustment amount according to the deviation value between the actual temperature information and the target temperature when there is a temperature measurement region with temperature abnormality, and then adjust the intake amount of the inlet unit 6 corresponding to the temperature measurement region with temperature abnormality according to the intake adjustment amount, and adjust the exhaust ratio of each exhaust component 7 according to the minimum distance between the temperature measurement region with temperature abnormality and each exhaust component 7.

[0030] In this embodiment, the materials of the upper half graphite cavity 1 and the lower half graphite cavity 2 are preferably both high-purity graphite. The upper half graphite cavity 1 can be the existing upper half graphite cavity 1, and the lower half graphite cavity 2 can be the existing lower half graphite cavity 2. The upper half graphite cavity 1 is located above the lower half graphite cavity 2. The upper half graphite cavity 1 is preferably connected to the lower half graphite cavity 2 through a side support member. The upper half graphite cavity 1 and the lower half graphite cavity 2 form a reaction chamber 3. This embodiment can horizontally divide the reaction chamber 3 into multiple temperature measurement regions by means of grid division. The carrier plate 4 of this embodiment can be the existing carrier plate 4. The carrier plate 4 is used to carry the epitaxial wafer that needs to be epitaxially grown, and the carrier plate 4 is located inside the reaction chamber 3. The first temperature measurement component 5 of this embodiment can be the existing temperature sensor or infrared thermal imager. The first temperature measurement component 5 measures the actual temperature information corresponding to each temperature measurement region through the temperature measurement holes provided on the upper half graphite cavity 1 or the lower half graphite cavity 2. That is, this embodiment is equivalent to using the first temperature measurement component 5 to measure the gas temperature in different regions of the reaction chamber 3. Specifically, the coverage area of the temperature measurement regions in this embodiment is smaller than the coverage area of the epitaxial wafer, that is, the number of temperature measurement regions intersecting with the epitaxial wafer is multiple. It should be understood that since the gas in the reaction chamber 3 will conduct heat with the epitaxial wafer, the actual temperature information corresponding to the temperature measurement regions intersecting with the epitaxial wafer can reflect the temperature of specific regions on the epitaxial wafer. The reaction gas inlet assembly of this embodiment is provided on the upper half graphite cavity 1. That is, this embodiment is equivalent to supplying the reaction gas into the reaction chamber 3 in a top inlet manner. Since the reaction gas inlet assembly of this embodiment includes multiple inlet units 6, and each temperature measurement region corresponds to at least one inlet unit 6, this embodiment can realize the zoning adjustment of the inlet flow rate of the reaction chamber 3. Preferably, each temperature measurement region corresponds to an inlet unit 6 that discharges gas vertically downward. The exhaust assembly 7 of this embodiment can be the existing exhaust pipe. The number of the exhaust assemblies 7 of this embodiment is multiple. An electromagnetic valve is preferably provided on the exhaust pipe. This embodiment can adjust the exhaust ratio of each exhaust assembly 7 by adjusting the opening degree of the electromagnetic valve on each exhaust pipe. The multiple exhaust assemblies 7 are symmetrically arranged on both sides of the reaction chamber 3. Therefore, this embodiment can achieve multi-directional symmetric and uniform exhaust of the reaction chamber 3 by making the exhaust ratios of the respective exhaust assemblies 7 the same. It should be understood that since this embodiment supplies the reaction gas into the reaction chamber 3 in a top inlet manner, and the exhaust assembly 7 is arranged on both sides of the reaction chamber 3, that is, the reaction gas entering the reaction chamber 3 will diffuse to both sides of the reaction chamber 3. The reaction gas diffusing to both sides of the reaction chamber 3 can blow the powder falling from the upper half graphite cavity 1 to the area outside the epitaxial wafer. Therefore, this embodiment can effectively reduce the situation of powder falling onto the epitaxial wafer, thereby effectively reducing the situation that the finally formed epitaxial wafer has growth defects due to the powder deposited on the upper half graphite cavity 1 falling onto the epitaxial wafer.It should be understood that in the prior art, only one exhaust component 7 is used to exhaust the reaction chamber 3 in a single direction. When the total exhaust volume is too large, the graphite components (such as the upper half moon graphite cavity 1 or the carrier 4) in the reaction chamber 3 may be accidentally twitched. At this time, shutdown maintenance is required. However, since this embodiment uses multiple exhaust components 7 to exhaust the reaction chamber 3 in a multi-directional symmetric and uniform manner, that is, the graphite components in the reaction chamber 3 are uniformly stressed in all directions, even if the total exhaust volume is too large, the graphite components in this embodiment will not be accidentally twitched. Thus, it effectively avoids the situation where shutdown maintenance is required due to the accidental twitching of the graphite components, and further effectively improves the epitaxial efficiency. It should also be understood that since only one exhaust component 7 is used to exhaust the reaction chamber 3 in the prior art, while multiple exhaust components 7 are used for exhaust in this embodiment, that is, this embodiment can achieve the same total exhaust volume as the existing exhaust component 7 when the pipe diameter of the exhaust component 7 is smaller than that of the existing exhaust component 7. Therefore, the pipe diameter of the exhaust component 7 in this embodiment is preferably smaller than that of the existing exhaust component 7. Since the temperature field distribution uniformity in the area where the carrier 4 is located affects the temperature distribution uniformity of the epitaxial wafer, this embodiment preferably only makes a horizontal area division for the area in the reaction chamber 3 where the carrier 4 is located, that is, this embodiment is equivalent to making the temperature measurement area only cover the area in the reaction chamber 3 where the carrier 4 is located and only setting the intake unit 6 directly above the carrier 4 (reference). Figure 3 ) to reduce the number of intake units 6 provided, thereby effectively reducing the production cost and usage cost of the reaction gas intake components.

[0031] The controller 8 of this embodiment is electrically connected to the first temperature measurement component 5, the intake unit 6, and the exhaust component 7 respectively. The controller 8 of this embodiment can control the reaction gas intake component to supply reaction gas to the reaction chamber 3 and control all exhaust components 7 to exhaust synchronously during the epitaxial growth process, and analyze whether there is a temperature abnormal temperature measurement area according to the actual temperature information and the preset target temperature. Specifically, the controller 8 can analyze whether there is a temperature abnormal temperature measurement area by analyzing whether the difference between the actual temperature information and the preset target temperature exceeds the second preset range. Since the heat exchange efficiency of the temperature measurement area changes when the intake air volume in the temperature measurement area changes, this embodiment can adjust the temperature of the temperature measurement area by adjusting the intake air volume of the intake unit 6 corresponding to the temperature measurement area. Specifically, the controller 8 of this embodiment can also obtain the intake air regulation amount according to the deviation value between the actual temperature information and the target temperature when there is a temperature abnormal temperature measurement area, and then adjust the intake air volume of the intake unit 6 corresponding to the temperature abnormal temperature measurement area according to the intake air regulation amount. Since adjusting the intake air volume of the intake unit 6 corresponding to the temperature abnormal temperature measurement area according to the intake air regulation amount will cause the reaction gas flow rate in the temperature abnormal temperature measurement area to change, resulting in a change in the gas flow field uniformity in the reaction chamber 3, and this embodiment can eliminate the influence of adjusting the intake air volume of the intake unit 6 corresponding to the temperature abnormal temperature measurement area on the gas flow field uniformity by adjusting the exhaust ratio of each exhaust component 7 according to the minimum distance between the temperature abnormal temperature measurement area and each exhaust component 7. Therefore, this embodiment is equivalent to making the temperature field distribution in the reaction chamber 3 uniform without affecting the gas flow field uniformity in the reaction chamber 3, so that the temperature distribution of the epitaxial wafer is uniform, thereby effectively avoiding the situation that the growth quality of the epitaxial layer is affected due to the influence of the gas flow field uniformity. The specific process of adjusting the exhaust ratio of each exhaust component 7 according to the minimum distance between the temperature abnormal temperature measurement area and each exhaust component 7 in this embodiment can be: calculating the minimum distance between the temperature abnormal temperature measurement area and each exhaust component 7; normalizing all the minimum distances to obtain the exhaust ratio corresponding to each exhaust component 7. Specifically, after adjusting the exhaust ratio of each exhaust component 7, the exhaust ratio of the exhaust component 7 close to the temperature abnormal temperature measurement area is greater than that of the exhaust component far from the temperature abnormal temperature measurement area. It should be understood that when the actual temperature information in the temperature measurement area is less than the target temperature, this embodiment can increase the temperature of the temperature measurement area by reducing the intake air volume of the intake unit 6 corresponding to the temperature measurement area, and when the actual temperature information in the temperature measurement area is greater than the target temperature, this embodiment can decrease the temperature of the temperature measurement area by increasing the intake air volume of the intake unit 6 corresponding to the temperature measurement area. That is, when the actual temperature information in the temperature measurement area is less than the target temperature, the intake air regulation amount is negative, and when the actual temperature information in the temperature measurement area is greater than the target temperature, the intake air regulation amount is positive.

[0032] An epitaxial growth system provided by the present application can achieve uniform temperature field distribution in the reaction chamber 3 without affecting the gas flow field uniformity in the reaction chamber 3 through the cooperation of the first temperature measurement component 5, the intake unit 6, and the exhaust component 7. That is, the present application can achieve zone temperature control of the epitaxial wafer by zoning the temperature control of the reaction chamber 3 and make the temperature distribution of the epitaxial wafer uniform by making the temperature field distribution in the reaction chamber 3 uniform. Therefore, the present application can effectively solve the problem that when the temperature field distribution of the epitaxial wafer is uneven, it is impossible to perform zone temperature control on the reaction chamber 3, resulting in uneven temperature distribution of the epitaxial wafer and poor consistency in the growth quality of the finally formed epitaxial layer.

[0033] In some preferred embodiments, when the number of temperature measurement regions with abnormal temperature is one, the process of obtaining the intake air adjustment amount according to the deviation value between the actual temperature information and the target temperature includes: A1. Calculate the temperature deviation value according to the actual temperature information and the target temperature corresponding to the temperature measurement region with abnormal temperature, and then obtain the intake air adjustment amount according to the temperature deviation value and the first preset conversion relationship; The controller 8 is further configured to, for each temperature measurement region with normal temperature, after adjusting the intake air volume of the intake unit 6 corresponding to the temperature measurement region with abnormal temperature according to the intake air adjustment amount, obtain the first temperature influence amount according to the intake air adjustment amount, its minimum distance from the temperature measurement region with abnormal temperature, and the second preset conversion relationship, and obtain the intake air compensation amount according to the first temperature influence amount and the third preset conversion relationship; The process of adjusting the intake air volume of the intake unit 6 corresponding to the temperature measurement region with abnormal temperature according to the intake air adjustment amount includes: Adjust the intake air volume of the intake unit 6 corresponding to the corresponding temperature measurement region with abnormal temperature according to the intake air adjustment amount, and adjust the intake air volume of the intake unit 6 corresponding to the corresponding temperature measurement region with normal temperature according to the intake air compensation amount.

[0034] The first preset conversion relationship in this embodiment can be a preset calculation formula or a pre-constructed mapping relationship table regarding the temperature deviation value and the intake air adjustment amount. Specifically, when the first preset conversion relationship is a pre-constructed mapping relationship table regarding the temperature deviation value and the intake air adjustment amount, this embodiment can obtain the preliminary intake air adjustment amount by querying this mapping relationship table according to the temperature deviation value. The second preset conversion relationship in this embodiment can be a pre-constructed calculation formula or a mapping relationship table regarding the intake air adjustment amount, the regional spacing, and the temperature influence amount. Specifically, when the second preset conversion relationship is a pre-constructed mapping relationship table regarding the intake air adjustment amount, the regional spacing, and the temperature influence amount, this embodiment can obtain the first temperature influence amount by querying this mapping relationship table according to the intake air adjustment amount and the minimum distance between the temperature measurement area with normal temperature and the temperature measurement area with abnormal temperature. The third preset conversion relationship in this embodiment can be a pre-constructed calculation formula or a mapping relationship table regarding the temperature influence amount and the intake air compensation amount. Specifically, when the third preset conversion relationship is a mapping relationship table regarding the temperature influence amount and the intake air compensation amount, this embodiment can obtain the intake air compensation amount by querying this mapping relationship table according to the first temperature compensation amount. Since the reaction gas entering the reaction chamber 3 will diffuse in all directions, when adjusting the intake air amount of the intake unit 6 corresponding to the temperature measurement area with abnormal temperature according to the intake air adjustment amount, the air flow rate in the temperature measurement area with normal temperature will change to a certain extent, and this change in the air flow rate will cause the temperature in the temperature measurement area with normal temperature to change. And this embodiment can quantify the influence of adjusting the intake air amount of the temperature measurement area with abnormal temperature on the temperature of the temperature measurement area with normal temperature by obtaining the first temperature influence amount according to the intake air adjustment amount, its minimum distance from the temperature measurement area with abnormal temperature, and the second preset conversion relationship, and eliminate the influence of adjusting the intake air amount of the temperature measurement area with abnormal temperature on the temperature of the temperature measurement area with normal temperature by obtaining the intake air compensation amount according to the first temperature influence amount and the third preset conversion relationship and adjusting the intake air amount of the corresponding intake unit according to the intake air compensation amount. Therefore, this embodiment can effectively avoid the situation that the temperature measurement area with normal temperature is transformed into a temperature measurement area with abnormal temperature due to the influence of adjusting the intake air amount of the temperature measurement area with abnormal temperature on the temperature of the temperature measurement area with normal temperature, that is, this embodiment can effectively improve the accuracy and reliability of temperature adjustment, thereby effectively improving the temperature field uniformity in the reaction chamber 3 and the temperature distribution uniformity of the epitaxial wafer, and further effectively improving the growth quality consistency of the epitaxial layer.

[0035] In some preferred embodiments, when the number of temperature measurement areas with abnormal temperature is multiple, the process of obtaining the intake air adjustment amount according to the deviation value between the actual temperature information and the target temperature includes: B1. Select the temperature measurement area with abnormal temperature that has the smallest distance from the axis of the carrier plate 4. Calculate the temperature deviation value based on the actual temperature information corresponding to the selected temperature measurement area and the target temperature, and then obtain the intake air adjustment amount according to the temperature deviation value and the first preset conversion relationship; B2. Select the temperature measurement area with abnormal temperature that has the smallest distance from the axis of the carrier plate 4 among the unselected temperature measurement areas with abnormal temperature; B3. Obtain the second temperature influence amount according to the intake air adjustment amount corresponding to the temperature measurement area with abnormal temperature that has been selected, the minimum distance between the temperature measurement area with abnormal temperature that has been selected and the current temperature measurement area with abnormal temperature, and the fourth preset conversion relationship, and calculate the temperature deviation value according to the actual temperature information corresponding to the currently selected temperature measurement area and the target temperature; B4. Analyze whether the second temperature influence amount is the same as the temperature deviation value. If so, set the intake air adjustment amount corresponding to the currently selected temperature measurement area to 0, and execute step B6. If not, execute step B5; B5. Calculate the total temperature deviation value according to the second temperature influence amount and the temperature deviation value, and then obtain the intake air adjustment amount according to the total temperature deviation value and the fifth preset conversion relationship; B6. Analyze whether there is still an unselected temperature measurement area with abnormal temperature. If so, return to step B2. If not, execute step B7; B7. For each temperature measurement area with normal temperature, obtain the first temperature influence amount corresponding to each temperature measurement area with abnormal temperature according to the intake air adjustment amount corresponding to each temperature measurement area with abnormal temperature, the minimum distance between it and each temperature measurement area with abnormal temperature, and the second preset conversion relationship, and obtain the intake air compensation amount corresponding to each first temperature influence amount according to the first temperature influence amount and the third preset conversion relationship; The process of adjusting the intake air volume of the intake unit 6 corresponding to the temperature measurement area with abnormal temperature according to the intake air adjustment amount includes: Adjust the intake air volume of the intake unit 6 corresponding to the corresponding temperature measurement area with abnormal temperature according to the intake air adjustment amount, and adjust the intake air volume of the intake unit 6 corresponding to the corresponding temperature measurement area with normal temperature according to the intake air compensation amount.

[0036] This embodiment is equivalent to, when there are multiple temperature-abnormal temperature measurement regions, first calculating the intake air adjustment amount of the temperature measurement region with the smallest distance from the axis of the carrier 4 among the temperature-abnormal temperature measurement regions, and then analyzing whether it is still necessary to adjust the intake air amount of other temperature-abnormal temperature measurement regions under the influence of this intake air adjustment amount. If not, then comprehensively considering the influence of the intake air adjustment amount and the deviation between the actual temperature information and the target temperature, calculate the intake air adjustment amount of other temperature-abnormal temperature measurement regions. Therefore, this embodiment can avoid the situation where, due to determining the intake air adjustment amount of each temperature-abnormal temperature measurement region only based on the temperature deviation of each temperature-abnormal temperature measurement region, the intake air amount of the temperature measurement region with temperature abnormality that does not require intake air adjustment under the influence of other intake air adjustment amounts is adjusted, resulting in the temperature of this temperature-abnormal temperature measurement region remaining abnormal. The fourth preset conversion relationship of this embodiment can be a preset calculation formula or a pre-constructed mapping relationship table regarding the intake air adjustment amount corresponding to the temperature-abnormal temperature measurement region, the minimum distance between two temperature-abnormal temperature measurement regions, and the temperature influence amount. The fifth preset conversion relationship of this embodiment can be a pre-constructed calculation formula or a mapping relationship table regarding the temperature deviation value and the intake air adjustment amount. It should be understood that when the number of temperature-abnormal temperature measurement regions that have been selected is multiple, in step B3, first calculate the intake air adjustment amount of each selected temperature-abnormal temperature measurement region and the temperature influence value of the minimum distance between the selected temperature-abnormal temperature measurement region and the current temperature-abnormal temperature measurement region on the currently selected temperature-abnormal temperature measurement region respectively, and then use the sum value of all temperature influence values as the second temperature influence value. It should be understood that this embodiment also needs to calculate the intake air compensation amount for each temperature-normal temperature measurement region, and the process of calculating the intake air compensation amount in this embodiment is the same as the process of calculating the intake air compensation amount in the above embodiment, and will not be elaborated in detail here.

[0037] In some preferred embodiments, the intake unit 6 includes an intake air passage 61 and an air outlet plate 62. The two ends of the intake air passage 61 are respectively connected to a reaction gas supply assembly (not shown in the figure) and the air outlet plate 62. A first flow rate adjustment assembly for adjusting the flow rate of the reaction gas is provided on the intake air passage 61, and a first air outlet hole 11 is provided at the center of the air outlet plate 62. The reaction gas in this embodiment is transported from the reaction gas supply assembly to the air outlet plate 62 via the intake air passage 61, and then enters the corresponding temperature measurement region through the first air outlet hole 11, that is, the first air outlet hole 11 can play a role in guiding the reaction gas to a specific region in the reaction chamber 3. The first flow rate adjustment assembly of this embodiment preferably includes a pneumatic valve 9 and a mass flow meter 10. The pneumatic valve 9 has the advantages of fast response speed, high reliability, and high adjustment accuracy, and the mass flow meter 10 has the advantage of high measurement accuracy. Therefore, this embodiment can achieve high-precision adjustment of the intake air amount of the temperature measurement region through the cooperation of the pneumatic valve 9 and the mass flow meter 10.

[0038] In some preferred embodiments, a plurality of second air outlet holes 12 are further provided on the air outlet plate 62, and the plurality of second air outlet holes 12 are circumferentially arrayed outside the first air outlet hole 11. Since a plurality of second air outlet holes 12 are circumferentially arrayed outside the outer circumference of the first air outlet hole 11 in this embodiment, that is, this embodiment is equivalent to converting the air outlet mode from single central air outlet to multi-point dispersed air outlet. Therefore, this embodiment can make the reaction gas diffuse into the reaction chamber 3 better and more evenly, so as to avoid the situation of too high or too low local gas concentration, thereby effectively improving the uniformity of gas concentration distribution, and further effectively avoiding the situation that the growth quality of epitaxial layers in different regions is inconsistent due to the influence of the uniformity of gas concentration distribution. Preferably, the cross-sectional shapes of the first air outlet hole 11 and the second air outlet holes 12 in this embodiment are both circular, and the diameter of the first air outlet hole 11 is greater than the diameter of the second air outlet holes 12.

[0039] In some preferred embodiments, the installation height of the air inlet of the exhaust assembly 7 is greater than the height of the bottom of the reaction chamber 3. Since the installation height of the air inlet of the exhaust assembly 7 in this embodiment is greater than the height of the bottom of the reaction chamber 3, this embodiment is equivalent to ensuring that the waste gas in the reaction chamber 3 is not discharged from the lowest point of the reaction chamber 3. Since graphite debris or dust may accumulate at the bottom of the reaction chamber 3, and the installation height of the air inlet of the exhaust assembly 7 is set to be greater than the height of the bottom of the reaction chamber 3 in this embodiment, this embodiment can effectively reduce the situation that the exhaust assembly 7 inhales graphite debris or dust, thereby effectively reducing the situation that the exhaust efficiency of the exhaust assembly 7 decreases, the exhaust assembly 7 is damaged or even damaged due to the exhaust assembly 7 inhaling graphite debris or dust, and further effectively reducing the situation that the uniformity of the gas flow field in the reaction chamber 3 and the growth quality of the epitaxial layer are affected due to the decrease in the exhaust efficiency of some exhaust assemblies 7.

[0040] In some preferred embodiments, the epitaxial growth system further includes a rotating assembly 13, and the rotating assembly 13 is arranged on the lower half graphite cavity 2. The rotating assembly 13 is used to drive the carrier plate 4 to rotate. The rotating assembly 13 in this embodiment can be an existing assembly for driving the carrier plate 4 to rotate. In this embodiment, by rotating the carrier plate 4 during the epitaxial growth process, each area on the epitaxial wafer will periodically pass through different positions in the reaction chamber 3, so as to improve the uniformity of the temperature distribution of the epitaxial wafer, thereby effectively improving the growth quality consistency of the finally formed epitaxial layer.

[0041] In some preferred embodiments, the rotating assembly 13 includes an air-floating channel 131 and an air-floating gas supply assembly (not shown in the figure). The air-floating channel 131 is disposed in the lower half graphite cavity 2. The air-floating channel 131 has a plurality of air outlets 132 located directly below the carrier plate 4 and arranged in a circumferential array along the axis of the carrier plate 4. The extension direction of the air outlet 132 forms an angle of 30° - 60° with the bottom surface of the carrier plate 4. The air inlet of the air-floating channel 131 is connected to the air-floating gas supply assembly through a second flow rate regulating assembly. This embodiment is equivalent to driving the carrier plate 4 to float and rotate by means of air-floating rotation, so as to avoid the situation that the carrier plate 4 and the lower half graphite cavity 2 are quickly worn and particulate contamination is generated due to the contact between the carrier plate 4 and the lower half graphite cavity 2 during the rotation process. In this embodiment, the rotation speed of the carrier plate 4 can be adjusted by controlling the second flow rate regulating assembly to adjust the flow rate of the air-floating gas entering the air-floating channel 131. It should be understood that since this embodiment uses the top air inlet method to supply reaction gas into the reaction chamber 3, the reaction gas can provide a downward pressure on the carrier plate 4, and this downward pressure can inhibit the displacement of the carrier plate 4 in the horizontal direction. Therefore, this embodiment can effectively reduce the situation that the carrier plate 4 is accidentally thrown out and the epitaxial wafer is accidentally damaged due to unstable air-floating rotation.

[0042] In some preferred embodiments, the epitaxial growth system further includes a second temperature measurement assembly (not shown in the figure). The second temperature measurement assembly is used to measure the cavity temperature information of the lower half graphite cavity 2. The controller 8 is further configured to generate an alarm message when there is no temperature anomaly in the temperature measurement area and the difference between the actual temperature information and the cavity temperature information exceeds a first preset range. The second temperature measurement assembly in this embodiment is preferably a pyrometer. The pyrometer is disposed in the lower half graphite cavity 2 and is used to measure the cavity temperature information of the lower half graphite cavity 2. Since the reaction gas in the reaction chamber 3 will exchange heat with the lower half graphite cavity 2, that is, when there is no temperature anomaly in the temperature measurement area, the actual temperature information and the cavity temperature information should be the same or close (the difference between the actual temperature information and the cavity temperature information exceeds the first preset range). Therefore, when there is no temperature anomaly in the temperature measurement area and the difference between the actual temperature information and the cavity temperature information exceeds the first preset range, it indicates that there may be a failure of the heating device, data drift of the first temperature measurement assembly 5 or the second temperature measurement assembly, or the overall thermal state of the epitaxial growth system (such as the insulation performance of the insulation layer decreases). In this case, an alarm message needs to be generated to notify relevant personnel, that is, this embodiment can timely detect potential problems of the epitaxial growth system to improve the growth quality and reliability of epitaxial growth.

[0043] In some preferred embodiments, the epitaxial growth system further includes a confluence pipeline 14 and an exhaust gas treatment assembly 15. Two ends of the confluence pipeline 14 are respectively connected to the air outlets 132 of all the exhaust assemblies 7 and the exhaust gas treatment assembly 15, and a butterfly valve 16 is provided on the confluence pipeline 14. One end of the confluence pipeline 14 of this embodiment is connected to the air outlets 132 of all the exhaust assemblies 7, that is, this embodiment is equivalent to using the confluence pipeline 14 to collect the exhaust gases of different exhaust assemblies 7 together. The exhaust gas treatment assembly of this embodiment can be an existing exhaust gas treatment assembly 15, and this exhaust gas treatment assembly 15 is used to treat the collected exhaust gas (such as purifying or decomposing harmful components) to avoid the situation of directly discharging exhaust gas and causing environmental pollution. The butterfly valve 16 of this embodiment can be an existing butterfly valve 16, and this embodiment can adjust the flow rate of the exhaust gas in the confluence pipeline 14 by adjusting the opening degree of the butterfly valve 16, so as to adjust the overall pressure and exhaust rate in the reaction chamber 3. It should be understood that since this embodiment uses multiple exhaust assemblies 7 to exhaust the reaction chamber 3, that is, in the case of the same total exhaust volume, the exhaust volume of each exhaust assembly 7 in this embodiment is smaller than that of the exhaust assembly 7 in the prior art. Therefore, this embodiment can cool the waste gas in the exhaust assembly 7 more sufficiently, thereby effectively reducing the situation that chemical reactions occur on the surface of the butterfly valve 16 due to insufficient cooling of the discharged reaction gas, deposits are formed on the surface of the butterfly valve 16, and the service life of the butterfly valve 16 is reduced.

[0044] As can be seen from the above, an epitaxial growth system provided by the present application can realize the uniform distribution of the temperature field in the reaction chamber 3 without affecting the uniformity of the gas flow field in the reaction chamber 3 through the cooperation of the first temperature measurement assembly 5, the intake unit 6 and the exhaust assembly 7. That is, the present application can realize the zoning temperature adjustment of the epitaxial wafer by zoning the temperature adjustment of the reaction chamber 3 and make the temperature distribution of the epitaxial wafer uniform by making the temperature field distribution in the reaction chamber 3 uniform. Therefore, the present application can effectively solve the problem that the temperature distribution of the epitaxial wafer is uneven and the consistency of the growth quality of the finally formed epitaxial layer is poor due to the inability to perform zoning temperature adjustment on the reaction chamber 3 when the temperature field of the epitaxial wafer is unevenly distributed.

[0045] Second aspect, as Figure 5 shown, the present application further provides an epitaxial growth method, which is applied to an epitaxial growth system provided in the first aspect above. The epitaxial growth method includes the following steps: S1. During the epitaxial growth process, control the reaction gas intake assembly to supply reaction gas to the reaction chamber 3 and control all the exhaust assemblies 7 to exhaust synchronously, and analyze whether there is a temperature abnormal temperature measurement area according to the actual temperature information and the preset target temperature; S2. When there is a temperature anomaly in the temperature measurement area, obtain the intake air regulation amount according to the deviation value between the actual temperature information and the target temperature, then adjust the intake air amount of the intake unit 6 corresponding to the temperature measurement area with the temperature anomaly according to the intake air regulation amount, and adjust the exhaust ratio of each exhaust component 7 according to the minimum distance between the temperature measurement area with the temperature anomaly and each exhaust component 7.

[0046] An epitaxial growth method provided by this application is applied in an epitaxial growth system provided in the first aspect above. The principle of the epitaxial growth method provided in this embodiment is the same as that of the epitaxial growth system provided in the first aspect above, and will not be elaborated in detail here.

[0047] As can be seen from the above, an epitaxial growth system and method provided by this application can achieve uniform temperature field distribution in the reaction chamber 3 without affecting the gas flow field uniformity in the reaction chamber 3 through the cooperation of the first temperature measurement component 5, the intake unit 6 and the exhaust component 7. That is, this application can achieve zone temperature control of the epitaxial wafer by zoning the temperature control of the reaction chamber 3 and make the temperature distribution of the epitaxial wafer uniform by making the temperature field distribution in the reaction chamber 3 uniform. Therefore, this application can effectively solve the problem that when the temperature field distribution of the epitaxial wafer is uneven, the reaction chamber 3 cannot be zone temperature controlled, resulting in uneven temperature distribution of the epitaxial wafer and poor consistency in the growth quality of the finally formed epitaxial layer.

[0048] In the embodiments provided by this application, it should be understood that in this text, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations.

[0049] The above are only the embodiments of this application and are not used to limit the protection scope of this application. For those skilled in the art, this application can have various changes and modifications. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of this application shall be included in the protection scope of this application.

Claims

1. An epitaxial growth system, characterized in that, The epitaxial growth system includes: The upper half graphite cavity; The lower half graphite cavity, which forms a reaction chamber with the upper half graphite cavity, and the reaction chamber is horizontally divided into multiple temperature measurement regions; A carrier plate, located in the reaction chamber for carrying the epitaxial wafer; The first temperature measurement component, arranged outside the reaction chamber for measuring the actual temperature information corresponding to each of the temperature measurement regions; The reaction gas inlet component, arranged on the upper half graphite cavity, which includes multiple inlet units, and each of the temperature measurement regions corresponds to at least one inlet unit with a vertically downward gas outlet; Multiple exhaust components, symmetrically arranged on both sides of the reaction chamber; The controller is used to control the reaction gas inlet component to supply reaction gas to the reaction chamber and control all the exhaust components to exhaust synchronously during the epitaxial growth process, analyze whether there is a temperature measurement region with temperature abnormality according to the actual temperature information and the preset target temperature, and is also used to obtain the intake air adjustment amount according to the deviation value between the actual temperature information and the target temperature when there is a temperature measurement region with temperature abnormality, then adjust the intake air volume of the inlet unit corresponding to the temperature measurement region with temperature abnormality according to the intake air adjustment amount, and adjust the exhaust ratio of each of the exhaust components according to the minimum distance between the temperature measurement region with temperature abnormality and each of the exhaust components.

2. The epitaxial growth system according to claim 1, wherein, When the number of temperature measurement regions with temperature abnormality is one, the process of obtaining the intake air adjustment amount according to the deviation value between the actual temperature information and the target temperature includes: A1. Calculate the temperature deviation value according to the actual temperature information and the target temperature corresponding to the temperature measurement region with temperature abnormality, and then obtain the intake air adjustment amount according to the temperature deviation value and the first preset conversion relationship; The controller is also used to, for each temperature normal temperature measurement region, obtain the first temperature influence amount according to the intake air adjustment amount, the minimum distance between it and the temperature measurement region with temperature abnormality, and the second preset conversion relationship, and obtain the intake air compensation amount according to the first temperature influence amount and the third preset conversion relationship; The process of adjusting the intake air volume of the inlet unit corresponding to the temperature measurement region with temperature abnormality according to the intake air adjustment amount includes: Adjust the intake air volume of the inlet unit corresponding to the temperature measurement region with temperature abnormality according to the intake air adjustment amount, and adjust the intake air volume of the inlet unit corresponding to the temperature measurement region with normal temperature according to the intake air compensation amount.

3. The epitaxial growth system according to claim 1, wherein, The inlet unit includes an intake air channel and an air outlet plate, the two ends of the intake air channel are respectively connected with the reaction gas supply component and the air outlet plate, a first flow rate adjustment component for adjusting the flow rate of the reaction gas is arranged on the intake air channel, and a first air outlet hole is arranged at the center of the air outlet plate.

4. The epitaxial growth system according to claim 3, wherein Multiple second air outlet holes are also arranged on the air outlet plate, and the multiple second air outlet holes are arranged in a circumferential array outside the first air outlet hole.

5. The epitaxial growth system according to claim 1, characterized in that, The installation height of the air inlet of the exhaust component is greater than the height of the bottom of the reaction chamber.

6. The epitaxial growth system according to claim 5, wherein The epitaxial growth system further includes a rotation component, the rotation component is arranged on the lower half graphite cavity, and the rotation component is used to drive the carrier plate to rotate.

7. The epitaxial growth system according to claim 6, wherein The rotating assembly includes an air-floating channel and an air-floating gas supply assembly. The air-floating channel is arranged in the lower semi-moon graphite cavity. The air-floating channel has a plurality of air outlets located directly below the carrier plate and circumferentially arrayed along the axis of the carrier plate. The extension direction of the air outlet forms an angle of 30°-60° with the bottom surface of the carrier plate. The air inlet of the air-floating channel is connected to the air-floating gas supply assembly through a second flow rate regulating assembly.

8. The epitaxial growth system according to claim 1, characterized in that, The epitaxial growth system further includes a second temperature measuring assembly for measuring the cavity temperature information of the lower semi-moon graphite cavity. The controller is further configured to generate an alarm message when there is no temperature-abnormal temperature measuring area and the difference between the actual temperature information and the cavity temperature information exceeds a first preset range.

9. The epitaxial growth system according to claim 1, wherein The epitaxial growth system further includes a confluence pipeline and a tail gas treatment assembly. Two ends of the confluence pipeline are respectively connected to the air outlets of all the exhaust assemblies and the tail gas treatment assembly. A butterfly valve is provided on the confluence pipeline.

10. An epitaxial growth method, characterized in that, Applied in the epitaxial growth system according to any one of claims 1-9, the epitaxial growth method includes the following steps: S1. During the epitaxial growth process, control the reaction gas inlet assembly to supply reaction gas to the reaction chamber and control all the exhaust assemblies to exhaust synchronously, and analyze whether there is a temperature-abnormal temperature measuring area according to the actual temperature information and the preset target temperature; S2. When there is a temperature-abnormal temperature measuring area, obtain the intake air regulation amount according to the deviation value between the actual temperature information and the target temperature, then adjust the intake air amount of the intake unit corresponding to the temperature-abnormal temperature measuring area according to the intake air regulation amount, and adjust the exhaust ratio of each exhaust assembly according to the minimum distance between the temperature-abnormal temperature measuring area and each exhaust assembly.

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