Photoelectric adaptive detection system for yarn information, modeling method and control method

Abstract

The invention discloses a photoelectric adaptive detection system for yarn information and a modeling and control method, and belongs to the technical field of textile machinery. According to the yarn information photoelectric self-adaptive detection system and the modeling method, integrated modeling of the yarn information photoelectric self-adaptive detection system is achieved by constructing the index diode model, the infrared light-emitting tube characteristic model, the light intensity transmission model, the linear fitting model and the signal conversion model, and then rules and performance are analyzed in combination with a simulation method. Therefore, a parameter setting basis is provided for the design of an actual photoelectric self-adaptive detection system. Meanwhile, according to the self-adaptive control method, reference voltage deviation caused by reflector efficiency reduction and signal amplitude change caused by yarn specification change are adjusted in real time, yarn detection has higher anti-interference performance and adaptability, and the method is suitable for being applied to a high-speed weaving machine in a severe environment.

Description

Technical Field

[0001] The present invention relates to an optoelectronic adaptive detection system, modeling and control method for yarn information, belonging to the technical field of textile machinery. Background Art

[0002] The weft accumulator is an indispensable key component in looms such as hosiery machines. Traditional weft accumulators generally use asynchronous motors as drive elements. For example, Chinese Patent CN211698662U discloses a simple air-jet loom electronic control system, and the drive motor it uses is an asynchronous motor, which has advantages such as simple structure and low cost. However, its drive system has low efficiency and slow response. The existing weft accumulator system is more suitable for applications in occasions where the yarn conveying speed is slow. With the continuous improvement of digital technology and industrial automation, textile machinery has put forward higher requirements for the conveying performance and efficiency of weft accumulators. The drive motors of weft accumulators are developing towards permanent magnet synchronous motors. For example, Chinese Patent CN218812416U discloses an electronic weft accumulator with ESDP restraint function, which uses a permanent magnet synchronous motor as the drive element. The motor speed during the operation of the weft accumulator is usually as high as 6000 - 8000 revolutions per minute, and both the operating efficiency and reliability have been significantly improved. At this time, the high-precision and high-response detection of yarn information is closely related to the operating efficiency and reliability of the weft accumulator, and it is a key technology necessary for the development of this type of weft accumulator. Among them, using optoelectronic sensors is an effective solution. For example, Patent CN107083607A discloses a weft accumulator for detecting yarn using optoelectronic technology, which uses an infrared emission and reception device to detect yarn information. Through this method, the movement state of the weft yarn on the weft accumulator and the number of turns of the weft yarn unwinding are monitored. At the same time, the infrared emission and reception device solves the problems of uneven tension and easy weft breakage caused by the traditional contact detection device contacting the weft yarn.

[0003] However, for the current yarn information detection system, multiple control parameters need to be set in the initial design stage, and the design often adopts the method of repeated debugging, with a long cycle; and when the environment changes or the yarn specifications change, the detection accuracy of the yarn will decrease, thereby affecting the working efficiency of the weft accumulator and the processing quality of the loom.

[0004] The information disclosed in this background art is only used to understand the background of the inventive concept of the present invention, and therefore it may include information that does not constitute prior art. Summary of the Invention

[0005] In view of the above problems or one of the above problems, one object of the present invention is to provide a photoelectric adaptive detection system for yarn information, which constructs a controllable power supply module, a mathematical modeling module for photoelectric sensors, an amplifier circuit module, a conditioning circuit module, a comparison circuit module, an ARM controller and a photoelectric sensor module, and solves the problems of low environmental anti-interference performance and weak adaptability to changes in yarn specifications existing in the existing yarn information detection system of the weft accumulator.

[0006] In view of the above problems or one of the above problems, another object of the present invention is to provide a modeling method for a photoelectric adaptive detection system for yarn information, which constructs an exponential diode model, an infrared light-emitting diode characteristic model, a light intensity transmission model, a linear fitting model, and a signal conversion model, and solves the problems such as time-consuming and laborious caused by the need to repeatedly debug the parameters of photoelectric sensors on site by traditional methods.

[0007] In view of the above problems or one of the above problems, a third object of the present invention is to provide a control method for a photoelectric adaptive detection system for yarn information. By analyzing the key factors affecting the yarn signal through a mathematical model, a reference voltage control method based on fuzzy PI is constructed to solve the problem of reference voltage offset caused by the reduction of the mirror efficiency; at the same time, the influence of yarn thickness and color on the yarn signal is analyzed, and a comparator voltage control method for adaptive adjustment of yarn specifications is constructed to solve the problem of the change in the amplitude of the detection signal caused by the change in yarn specifications.

[0008] To achieve one of the above objects, the first technical solution of the present invention is as follows:

[0009] A photoelectric adaptive detection system for yarn information, comprising: a controllable power supply module, a mathematical modeling module for photoelectric sensors, an amplifier circuit module, a conditioning circuit module, a comparison circuit module, an ARM controller and a photoelectric sensor module;

[0010] The input of the controllable power supply module is the analog voltage U output by the ARM controller DA ,

[0011] The input of the mathematical modeling module for photoelectric sensors is the voltage U output by the controllable power supply module. The photoelectric sensor module converts the collected yarn passing information into a photocurrent signal I0.

[0012] The input signal of the amplifier circuit module is the photocurrent signal I0 of the photoelectric sensor module.

[0013] The input of the conditioning circuit module is the yarn amplified signal voltage U output by the amplifier circuit module S ,

[0014] The comparison circuit module has two inputs, namely the yarn detection signal voltage U1 output by the conditioning circuit module and the comparison voltage U calculated after the output of the ARM controller. C ,

[0015] The ARM controller has two inputs, which respectively collect the amplified signal U output by the amplifier circuit module through AD sampling S , and the pulse signal U2 output by the comparison circuit module through IO detection;

[0016] The photoelectric sensor module includes an infrared light-emitting diode, a photoelectric receiving tube, a reflecting mirror, and a light-shielding body, and its parameters include the reflecting efficiency η of the reflecting mirror m , the installation height h, and the installation angles θ1 and θ2.

[0017] The present invention constructs a photoelectric adaptive detection system for yarn information by setting a controllable power supply module, a photoelectric sensor mathematical modeling module, an amplifier circuit module, a conditioning circuit module, a comparison circuit module, an ARM controller, and a photoelectric sensor module. This system uses a mathematical model to study the influence of key factors such as the reflecting efficiency of the reflecting mirror and the specified yarn in the photoelectric adaptive detection device on the yarn signal, which can effectively improve the detection accuracy of the yarn, and then improve the working efficiency of the weft accumulator and the processing quality of the loom. Therefore, it can solve the problems such as low environmental anti-interference performance and weak adaptability to yarn specification changes existing in the existing yarn information detection system of the weft accumulator.

[0018] To achieve one of the above purposes, the second technical solution of the present invention is:

[0019] A modeling method for a photoelectric adaptive detection system of yarn information, which is applied to the above-mentioned photoelectric adaptive detection system of yarn information, and its modeling method includes the following steps:

[0020] Step 1, through the pre-constructed exponential diode model, according to the output voltage U of the ARM controller DA , calculate the infrared light-emitting diode current I;

[0021] Step 2, use the pre-constructed infrared light-emitting diode characteristic model, based on the infrared light-emitting diode current I, calculate the infrared light-emitting diode radiation intensity I e :

[0022] Step 3, use the pre-constructed light intensity transmission model, according to the infrared light-emitting diode radiation intensity I e , calculate the radiation illuminance E of the photoelectric receiving tube e ;

[0023] Step 4, use the pre-constructed linear fitting model to process the radiation illuminance E of the photoelectric receiving tube e to obtain the photocurrent I0 of the photoelectric receiving tube;

[0024] Step 5: Based on the pre-constructed signal conversion model, determine the relationship between the photocurrent I0 of the photoelectric receiving tube and the reference voltage, obtain the reference voltage U0 for the yarn signal, and realize the modeling of the photoelectric adaptive detection system for yarn information.

[0025] Through continuous exploration and experimentation, the present invention constructs an exponential diode model, an infrared light-emitting diode characteristic model, a light intensity transmission model, a linear fitting model, and a signal conversion model to obtain the reference voltage U0 for the yarn signal, realize the modeling of the photoelectric adaptive detection system for yarn information, solve the problems of time-consuming and laborious caused by repeatedly debugging the parameters of the photoelectric sensor on-site in the traditional method, reduce the workload in the initial design of the yarn detection of the weft accumulator, and through pre-modeling and simulation optimization design, and then conduct physical verification, effectively reduce the trial-and-error cost, saving time and effort.

[0026] Furthermore, for the modeling method of the photoelectric adaptive detection system for yarn information in the present invention, a mathematical model is used to model the sensing system, and the variable factors in the photoelectric detection device are studied: the reflection efficiency of the reflector and the influence of different specifications of yarns on the yarn signal; at the same time, an optimal reference voltage range for detecting the yarn signal is provided, and the simulation method is combined to analyze the rules and performance, so as to provide a basis for parameter setting for the design of the actual photoelectric adaptive detection system, saving research time and effort, and the solution is scientific, reasonable and practical.

[0027] As a preferred technical measure:

[0028] Step 1: Through the pre-constructed exponential diode model, according to the output voltage U DA of the ARM controller, the method for calculating the current I of the infrared light-emitting diode is as follows:

[0029] Since the light-emitting diode is an exponential diode in series with a current sensor, according to the characteristics of the exponential diode, a calculation relationship between the diode current I and the diode voltage U DA of the exponential diode model is constructed, and its calculation relationship is as follows:

[0030]

[0031] where q is the elementary charge of an electron, with a value of 1.602176×10 -19 C, k is the Boltzmann constant, with a value of 1.3806503×10 -23 J / K; IS is the saturation current, N is the emission coefficient, and T m1 is the temperature parameter of the diode;

[0032] The calculation formula for the saturation current IS is as follows:

[0033]

[0034] Among them, [V1, I1] and [V2, I2] are two parameter points;

[0035] The calculation formula of the emission coefficient N is as follows:

[0036]

[0037] Among them, V t = kT m1 / q,

[0038] By calculating the relational expression and according to the output voltage U of the ARM controller DA calculate the current I of the infrared light-emitting diode.

[0039] As a preferred technical measure:

[0040] Step 2, adopt a pre-constructed characteristic model of the infrared light-emitting diode, and calculate the radiation intensity I of the infrared light-emitting diode based on the current I of the infrared light-emitting diode e The method is as follows:

[0041] According to the characteristics of the infrared light-emitting diode, create a proportional relationship between the radiation intensity I of the infrared light-emitting diode e and the current I, and the calculation formula of the proportional relationship is as follows:

[0042] I e = K1 × I

[0043] Among them, K1 is a proportionality coefficient, which is obtained by linearly fitting the relationship between the radiation intensity I e and the current I, and the fitting process is as follows:

[0044] Take n coordinate points in the I e -I relationship diagram: A1(I e1 , I1), A2(I e2 , I2),... A n (I en , I n );

[0045] Perform a linear fit through the origin for the coordinate points;

[0046] Calculate the distance L from the fitting straight line to each point, and its calculation formula is as follows:

[0047]

[0048] Among them, I ei is the radiation intensity of the i-th coordinate point, and I i is the current of the i-th coordinate point;

[0049] After substituting the data of each coordinate point, the proportionality coefficient K1 is solved by minimizing L.

[0050] Substitute the solved proportionality coefficient K1 and the current I of the infrared light-emitting diode into the calculation formula of the proportional relationship to calculate the radiation intensity I. e .

[0051] As an optimized technical measure:

[0052] Step 3: Use the pre-constructed light intensity transmission model to calculate the irradiance E of the photoelectric receiving tube according to the radiation intensity I of the infrared light-emitting diode. e The method is as follows: e

[0053]

[0054] e According to the light transmission path of the infrared light-emitting diode, screen the relevant variables that affect the irradiance E of the photoelectric receiving tube. The relevant variables include the angle θ1, the angle θ2, the installation height h, the reflection efficiency η, m and the yarn diameter d and color passing through the sensor;

[0055] Based on the fact that the infrared light emitted by the infrared light-emitting diode irradiates the photoelectric receiving tube after a certain transmission distance, and the light intensity also attenuates during the transmission process. The attenuation is related to the installation height h between the two. Therefore, a calculation formula for the transmission distance L is constructed as follows:

[0055]

[0056] Since both θ1 and θ2 are very small, tanθ1 and tanθ2 are approximately equal to 1. According to the calculation formula of the transmission distance, the transmission distance is 2h.

[0057] The radiation intensity I e refers to the radiation flux within a unit solid angle Ω in a given direction. Its calculation formula is as follows:

[0058]

[0059] The irradiance E e refers to the radiation flux within a unit area S. Its calculation formula is as follows:

[0060]

[0061] According to the geometric relationship, the solid angle is the ratio of the projected area S to the square value of the spherical radius r. Its calculation formula is as follows:

[0062]

[0063] Based on the fact that the transmission distance 2h corresponds to the spherical radius r, construct the irradiance E of the photoelectric receiving tube.e The first illuminance calculation formula is as follows:

[0064]

[0065] According to the first calculation formula, the radiant illuminance E of the photoelectric receiving tube is analyzed e for its influencing characteristics;

[0066] The influencing characteristics include the following:

[0067] The radiant illuminance E of the photoelectric receiving tube e is inversely proportional to the square of twice the installation height 2h; the higher the installation height, the farther the distance between the infrared light-emitting diode and the photoelectric receiving tube, and the smaller the radiant intensity received by the photoelectric receiving tube; when installing the sensor, the installation height has been determined and is a fixed value;

[0068] Based on the influencing characteristics and the influence of the emission angle and the incident angle on the light transmission efficiency η θ , an expression for the radiant illuminance E of the photoelectric receiving tube with fixed parameters of the angle and height during installation is created, that is, the second illuminance calculation formula, which is as follows: e Based on the fact that the light emitted by the infrared emitting tube needs to pass through the reflector before being reflected to the photoelectric receiving tube, and the reflection efficiency η

[0069]

[0070] of the reflector also affects the light intensity transmission efficiency, the second illuminance calculation formula is optimized to obtain the third illuminance calculation formula, and its calculation formula is as follows: m Based on the fact that the occlusion of the yarn also affects the change of the light intensity, the third illuminance calculation formula is optimized to obtain the fourth illuminance calculation formula, and its calculation formula is as follows:

[0071]

[0072] S0 = x × y

[0073]

[0074] S0 = x × y

[0075] S1 = y × d

[0076] where E e0 is the radiant illuminance received by the photoelectric receiving tube when the light emitted by the infrared emitting tube has not been blocked or interfered by any yarn, and E e1 is the radiant illuminance of the photoelectric receiving tube after being blocked when the yarn passes through, d is the diameter of the yarn, S0 is the area of the light source detected in the entire system, x is the length of the detected surface, y is the width of the detected surface, and S1 is the area blocked by the yarn to be measured.

[0077] As a preferred technical measure:

[0078] Step 4, using the pre-constructed linear fitting model, process the irradiance E of the photoelectric receiving tube e The method for obtaining the photocurrent I0 of the photoelectric receiving tube is as follows:

[0079] According to the characteristics of the photoelectric receiving tube, create a calculation formula for the proportional relationship between the photocurrent I0 and the irradiance E of the photoelectric receiving tube e which is specifically as follows:

[0080] I0 = K2 × E e

[0081] where K2 is the proportionality coefficient, which is obtained by fitting the relationship between the photocurrent I0 and the irradiance E e

[0082] As a preferred technical measure:

[0083] Step 5, based on the pre-constructed signal conversion model, determine the relationship between the photocurrent I0 of the photoelectric receiving tube and the reference voltage, and the method for obtaining the reference voltage U0 of the yarn signal is as follows:

[0084] Since the signal generated by the photoelectric receiving tube is a current signal and is very weak, construct a calculation formula for the transimpedance amplifier circuit to convert the current signal into a voltage signal and amplify the signal. The specific expression of the calculation formula for the transimpedance amplifier circuit is as follows:

[0085] U S = U ref - I0(R1 + R2)

[0086] where U S is the voltage of the amplified signal sampled by the ARM controller AD, U ref is the reference voltage at the positive input end of the amplifier, R1 is the current-limiting resistor on the feedback network, and R2 is the variable resistor in series with R1;

[0087] According to the calculation formula of the transimpedance amplifier circuit, construct a voltage conversion relationship formula for adjusting the voltage between the voltage of the infrared light-emitting diode U DA and the sampled and amplified signal voltage U of the yarn S that is, the actual voltage of the yarn signal, which is specifically as follows:

[0088]

[0089] According to the voltage conversion relationship formula, substitute the recommended photocurrent of the specific model photoelectric receiving tube and the typical irradiance value, and calculate a range of reference voltage U0, so that when the yarn signal operates under this reference voltage, the best detection effect can be achieved. ​

[0090] To achieve one of the above purposes, the third technical solution of the present invention is as follows:

[0091] A control method for an optoelectronic adaptive detection system for yarn information, which is applied to the above-mentioned optoelectronic adaptive detection system for yarn information, and is based on a reference voltage control method of fuzzy PI and a comparator voltage control method of adaptive adjustment based on yarn specifications;

[0092] The reference voltage control method is used to adjust the reference voltage offset change caused by the reduction of the mirror efficiency in real time;

[0093] The comparator voltage control method is used to adjust the signal amplitude change caused by the yarn specification change in real time.

[0094] Compared with the traditional yarn detection, the adaptive control method in the present invention can adjust the reference voltage offset problem caused by the reduction of the mirror efficiency in real time, and at the same time adjust the signal amplitude change caused by the yarn specification change in real time, so that the yarn detection has higher anti-interference ability, flexibility and better accuracy, and is especially suitable for the complex and changeable loom environment to meet the increasingly diverse textile needs.

[0095] As a preferred technical measure:

[0096] The reference voltage control method based on fuzzy PI includes the following content:

[0097] Take the calculated reference voltage value U0 as the target voltage value of the fuzzy PI controller, and use the AD sampling of the ARM controller to sample the yarn amplified signal U S The U obtained after filtering f As the feedback voltage U of the fuzzy PI controller f , the feedback voltage U f Subtract it from the target reference voltage U0 to obtain the voltage error value e, and obtain the error change rate e by differentiating the error c , input it into the fuzzy controller, perform fuzzy processing on it, and adopt closed-loop control to make the optoelectronic sensor work in the optimal state and the detection circuit work in the optimal state;

[0098] Or / and, the comparator voltage control method of adaptive adjustment based on yarn specifications includes the following content:

[0099] Use the AD sampling of the ARM controller to sample the yarn amplified signal U S , and use this signal as the calculation basis for the comparison voltage in the subsequent comparison circuit module. Through circuit analysis, establish the transfer function of the input and output of the conditioning circuit, and find out the relationship between the change of the yarn specification and the comparison voltage, which includes the yarn amplified signal U S And the comparison voltage U CThe relational expression is used to realize the real-time adjustment of the comparison voltage to adapt to the change of the signal amplitude caused by different yarn specifications.

[0100] As an optimal technical measure:

[0101] A fuzzy PI controller is adopted for processing, and the closed-loop control method is as follows:

[0102] Based on the voltage U of the light-emitting diode DA and the actual voltage U of the yarn signal S The discrete formula of the fuzzy PI algorithm is constructed to adjust the output U of the ARM controller DA to real-time adjust the reference voltage U0 of the yarn signal;

[0103] The expression of the discrete formula of the fuzzy PI algorithm is as follows:

[0104]

[0105] Among them, K p and K i are algorithm parameters, U(k) is the output voltage after fuzzy PI calculation, and e(k) is the error between the actual value and the theoretical value of the reference voltage;

[0106] At the same time, seven linguistic variables for setting the fuzzy subset values are set, including positive big PB, positive middle PM, positive small PS, zero ZO, negative small NS, negative middle NM, and negative big NB. The set domain range (-6, 6) corresponds to the endpoints of the seven linguistic variables respectively, and the range of the voltage error value e is set to (-1, 1), and it is mapped to the domain;

[0107] Then its membership degree is determined through the triangular membership function;

[0108] Then, a fuzzy rule table is established according to experience, and finally the defuzzification is performed to obtain the change values of K p and K i The expression is as follows:

[0109]

[0110] Among them, K p0 is the initial value of K p ΔK p is the change value of K p K i0 is the initial value of K i ΔK i is the change value of K i The fuzzy PI algorithm operates in the ARM, and the calculated result is used to control the voltage of the infrared light-emitting diode by means of the output U DA simulated voltage. When the light reflection efficiency η of the reflecting mirror mWhen it decreases, increase U DA to compensate for the offset of the reference voltage;

[0111] Finally, after amplification and filtering, the compensated reference voltage is used as the feedback voltage U f to form a closed-loop control;

[0112] Or / and, the method to adapt to the change of signal amplitude caused by different yarn specifications is as follows:

[0113] When there is no yarn passing through, the yarn signal is a reference voltage signal. When the yarn passes through, the occlusion of the yarn will affect the irradiance of the photoelectric receiving tube, and the photocurrent I affected by the yarn occlusion is calculated accordingly Z The size, and its specific formula is as follows:

[0114]

[0115] Among them, I0 is the size of the reference photocurrent not blocked by the yarn, d is the yarn diameter, and x is the width of the detected light source surface; the amplified signal U S is expressed as:

[0116]

[0117] Among them, U ref is the reference voltage at the positive input terminal of the previous-stage amplifier, R1 is the current-limiting resistor on the feedback network of the previous-stage operational amplifier, and R2 is the variable resistor in series with R1;

[0118] Through the structural analysis of the conditioning circuit, combined with the analysis of virtual short and virtual open and the capacitive dynamic circuit, the transfer function relationship between U S and U1 is deduced;

[0119] Since the input network of the operational amplifier is a capacitor C2 in series with a resistor R3, the input impedance Z in is expressed as:

[0120]

[0121] Since the feedback network is a resistor R4 in parallel with a capacitor C3, the feedback impedance is Z f is expressed as:

[0122]

[0123] According to the principle of the operational amplifier, the input terminal current is equal to the feedback network current, and the relationship between U S and U1 is as follows:

[0124]

[0125] Among them, Uref1 The reference voltage for the conditioning circuit operational amplifier is ignored during the dynamic analysis of the circuit;

[0126] U S (s) and the transfer function G(s) of U1(s) are as follows:

[0127]

[0128] where s is the complex frequency variable in the Laplace transform;

[0129] Combined with the sampling frequency and pulse width of the ARM, set U h to an appropriate voltage increment, and its expression is as follows:

[0130] U C = U 2min + U h

[0131] Then the final comparison voltage U C has the following relationship with the yarn diameter as shown by the following formula:

[0132]

[0133] Since it is difficult to collect the signal of the change in yarn specifications during the actual application process, by collecting the amplified yarn signal U S to calculate the comparison voltage U C , then the relationship between U S and U C is as follows:

[0134]

[0135] Finally, through the above calculation and analysis, when the yarn specifications change, by sampling the amplified yarn signal U S and calculating with the ARM, the comparator comparison voltage U C can adaptively change with the yarn specifications.

[0136] To achieve one of the above purposes, the fourth technical solution of the present invention is:

[0137] An electronic device, which includes:

[0138] One or more processors;

[0139] A storage device for storing one or more programs;

[0140] When the one or more programs are executed by the one or more processors, the one or more processors implement the above-mentioned optoelectronic adaptive detection system, modeling and control method for yarn information.

[0141] To achieve one of the above purposes, the fifth technical solution of the present invention is as follows:

[0142] A computer-readable storage medium, on which a computer program is stored, and when the program is executed by a processor, it implements the above-mentioned optoelectronic adaptive detection system, modeling and control method for yarn information.

[0143] Compared with the prior art solutions, the present invention has the following beneficial effects:

[0144] The present invention constructs an optoelectronic adaptive detection system for yarn information by setting a controllable power supply module, an optoelectronic sensor mathematical modeling module, an amplifier circuit module, a conditioning circuit module, a comparison circuit module, an ARM controller and an optoelectronic sensor module. This system uses a mathematical model to study the influence of key factors such as the light reflection efficiency of the reflector and the specification yarn on the yarn signal in the optoelectronic adaptive detection device, which can effectively improve the detection accuracy of the yarn, and then improve the working efficiency of the weft accumulator and the processing quality of the loom. Therefore, it can solve the problems of low environmental anti-interference performance and weak adaptability to yarn specification changes in the existing weft accumulator yarn information detection system.

[0145] Furthermore, through continuous exploration and experiments, the present invention constructs an exponential diode model, an infrared light-emitting diode characteristic model, a light intensity transmission model, a linear fitting model, and a signal conversion model to obtain the reference voltage U0 of the yarn signal, realizing the modeling of the yarn sensing system, facilitating the debugging and testing of the yarn sensing system, thereby accurately setting the sensor parameters and saving research time and effort. The solution is scientific, reasonable, and practical.

[0146] Further, the modeling method of the optoelectronic adaptive detection system for yarn information in the present invention uses a mathematical model to model the sensing system, studying the variable factors in the optoelectronic detection device: the light reflection efficiency of the reflector and the influence of different specification yarns on the yarn signal; at the same time, it also provides an optimal reference voltage range for detecting the yarn signal, thus realizing the simulation of the weft accumulator yarn detection, reducing the workload of the initial design of the weft accumulator yarn detection. Through pre-modeling and simulation optimization design and then physical verification, the trial-and-error cost is effectively reduced, saving time and effort.

[0147] Furthermore, compared with traditional yarn detection, the adaptive control method of the present invention makes real-time adjustments to the problem of reference voltage offset caused by the reduction of the reflector efficiency and the signal amplitude change caused by the change of yarn specifications, so that the yarn detection has higher anti-interference performance, flexibility and better accuracy, especially suitable for the complex and changeable loom environment, meeting the increasingly diverse textile needs. BRIEF DESCRIPTION OF THE DRAWINGS

[0148] Figure 1It is a principle block diagram of an optoelectronic adaptive detection system, modeling and control method for yarn information of the present invention;

[0149] Figure 2 It is Figure 1 a principle block diagram of a modeling process of the optoelectronic sensor part in

[0150] Figure 3 It is Figure 1 a physical schematic diagram of the optoelectronic sensor part in

[0151] Figure 4 It is Figure 1 a reference voltage control principle block diagram based on the fuzzy PI algorithm of the ARM processor part in

[0152] Figure 5 It is Figure 1 a comparator voltage control principle block diagram based on the adaptive adjustment of yarn specifications of the ARM processor part in

[0153] Figure 6 It is Figure 1 a detailed circuit diagram of the amplifier circuit part in

[0154] Figure 7 It is Figure 1 a detailed circuit diagram of the conditioning circuit and the comparison circuit part in Specific embodiments

[0155] In order to make the objectives, technical solutions and advantages of the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0156] On the contrary, the present invention covers any alternatives, modifications, equivalent methods and solutions made within the spirit and scope of the present invention defined by the claims. Further, in order to enable the public to better understand the present invention, some specific details are described in detail in the following detailed description of the present invention. Those skilled in the art can fully understand the present invention without the description of these specific details.

[0157] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the technical field to which the present invention belongs. The terms used herein are only for the purpose of describing specific embodiments and are not intended to limit the present invention. The term "or / and" used herein includes any and all combinations of one or more of the related listed items.

[0158] The first specific embodiment of the optoelectronic adaptive detection system and modeling method for yarn information of the present invention:

[0159] A modeling method for an optoelectronic adaptive detection system of yarn information, comprising the following steps:

[0160] Step 1, through a pre-constructed exponential diode model, according to the output voltage U of the ARM controller DA , calculate the current I of the infrared light-emitting diode;

[0161] Step 2, adopt a pre-constructed infrared light-emitting diode characteristic model, based on the current I of the infrared light-emitting diode, calculate the radiation intensity I of the infrared light-emitting diode e :

[0162] Step 3, adopt a pre-constructed light intensity transmission model, according to the radiation intensity I of the infrared light-emitting diode e , calculate the radiation illuminance E of the photoelectric receiving tube e ;

[0163] Step 4, use a pre-constructed linear fitting model to process the radiation illuminance E of the photoelectric receiving tube e to obtain the photocurrent I0 of the photoelectric receiving tube;

[0164] Step 5, based on a pre-constructed signal conversion model, determine the relationship between the photocurrent I0 of the photoelectric receiving tube and the reference voltage, obtain the reference voltage U0 of the yarn signal, and realize the modeling of the optoelectronic adaptive detection system of yarn information.

[0165] A specific embodiment of the modeling method for the optoelectronic adaptive detection system of yarn information of the present invention:

[0166] An optoelectronic adaptive detection system of yarn information, comprising:

[0167] A controllable power supply module; an optoelectronic sensor mathematical modeling module based on the light reflection efficiency η of the reflector m , installation height h and installation angles θ1θ2; an amplification circuit module; a conditioning circuit module; a comparison circuit module; an ARM controller. Specifically, refer to Figure 1 , Figure 1 in the left (inside the left red dashed box) to form a closed-loop control algorithm, that is, the first adaptive method: reference voltage control based on fuzzy PI. In Figure 1 in the right (inside the right red dashed box) to form another control algorithm, that is, the second adaptive control method: comparator voltage control based on adaptive adjustment of yarn specifications. The connection relationship is as follows:

[0168] The input of the controllable voltage power supply module is the analog voltage U output by the ARM controller DA, the input of the optoelectronic sensor mathematical modeling module is the voltage U output by the controllable power supply. The optoelectronic sensor converts the collected yarn passing information into a photocurrent signal I0. The input signal of the amplifier circuit is the photocurrent signal I0 of the optoelectronic sensor, and the input of the conditioning circuit is the yarn amplified signal voltage U output by the amplifier circuit. S , the comparator circuit has two inputs, namely the yarn detection signal voltage U1 output by the conditioning circuit and the comparison voltage U calculated after the output of the ARM controller. C , the ARM has two inputs, which respectively collect the U output by the amplifier circuit through the AD sampling method. S , and collect the pulse signal U2 output by the comparator circuit through IO detection. The sensor components include an infrared light-emitting diode, a photoelectric receiving tube, a reflector, and a light-shielding body. The main parameters include the reflectivity η of the reflector. m , the installation height h and the installation angles θ1 and θ2.

[0169] As Figure 2 and Figure 3 shown, the second specific embodiment of the optoelectronic adaptive detection system and modeling method for yarn information of the present invention:

[0170] A modeling method for an optoelectronic adaptive detection system of yarn information, and the modeling process is as follows: the input voltage of the infrared light-emitting diode is the magnitude of the analog voltage U output by the ARM controller. DA The current I of the infrared light-emitting diode is calculated through the exponential diode model; according to the characteristics of the infrared light-emitting diode, substituting the luminous coefficient of the specific model of the infrared light-emitting diode, the input current I can be calculated to obtain the irradiance I. e ; the input of the photoelectric receiving tube is the irradiance E reflected by the reflector or blocked by the yarn. e , and a raw yarn current signal I0 is output according to the characteristics of the photoelectric receiving tube. The input of the operational amplifier is the current signal I0, and the reference voltage U0 is obtained after calculation. The specific steps to realize the mathematical modeling of the optoelectronic sensor are as follows:

[0171] Step 1: Calculate the current I of the infrared light-emitting diode from the output voltage U of the ARM controller. DA This includes the following content:

[0172] The light-emitting diode can be regarded as an exponential diode connected in series with a current sensor. The calculation formula for the relationship between the diode current I and the diode voltage U of the exponential diode model is as follows: DA between them is as follows:

[0173]

[0174] where q is the elementary charge of an electron, and the value is 1.602176×10. -19Coulomb, k is the Boltzmann constant with a value of 1.3806503×10 -23 J / K. In addition, IS is the saturation current, N is the emission coefficient, and T m1 is the temperature parameter of the diode. The saturation current, emission coefficient, and temperature parameter of the diode can all be obtained by referring to the manual of the infrared emitting diode of a specific model. If the saturation current and emission coefficient parameters are not available in the manual, they can also be calculated through its volt-ampere characteristic diagram. Take two parameter points [V1, I1] and [V2, I2] in the diagram of the manual. The calculation formula for the saturation current IS is as follows:

[0175]

[0176] The calculation formula for the emission coefficient N is as follows:

[0177]

[0178] where V t = kT m1 / q, and the current I of the infrared emitting diode can be calculated by the ARM controller output voltage U DA through formula (1).

[0179] Step 2: Calculate the radiation intensity I e of the infrared emitting diode from the current I of the infrared emitting diode, which includes the following content:

[0180] From the characteristics of the infrared emitting diode, it is known that under ideal conditions, the radiation intensity I e of the infrared emitting diode is proportional to the current I, and the calculation formula for this relationship is as follows:

[0181] I e = K1×I(4)

[0182] where K1 is the proportionality coefficient, and its value can be obtained by referring to the manual of the infrared emitting diode of a specific model. If K1 is not directly given in the manual, the proportionality coefficient can be obtained by linearly fitting the relationship diagram between the radiation intensity I e and the current I. The fitting process is as follows. Take the coordinates of n points in the I e -I relationship diagram, A1(Ie1, I1), A2(Ie2, I2), …… A n (Ie n , I n ), and perform a linear fit through the origin for the coordinate points. Let the distance from the fitting line to each point be L, and its calculation formula is as follows:

[0183]

[0184] After substituting the data of each point, minimizing L can solve for K1, and the radiation intensity I can be calculated from the current I of the infrared light-emitting diode through Equation (4). e .

[0185] Step 3: Calculate the irradiance E of the photoelectric receiving tube from the radiation intensity I of the infrared light-emitting diode e , which includes the following content: e , including the following:

[0186] As described above, the light emitted by the infrared light-emitting diode is reflected by the reflector to the photoelectric receiving tube, and the irradiance E of the photoelectric receiving tube e is related to the angles θ1 and θ2, the installation height h, the reflection efficiency η m and the yarn specifications passing through the sensor (yarn diameter d and color).

[0187] The influence of the emission angle θ1 and the reception angle θ2 on the light transmission efficiency can be obtained by referring to the directional characteristic diagram in the manuals of specific models of infrared light-emitting diodes and photoelectric receiving tubes. When the emission angle of the infrared emitting tube is 0°, the emission efficiency is the highest, at 100%. When the emission angle deviates towards ±90°, the emission efficiency gradually decreases. Similarly, the incident angle of the photoelectric receiving tube is the same. When installing the sensor, the emission angle θ1 and the reception angle θ2 are already determined and are a fixed value.

[0188] The infrared light emitted by the infrared light-emitting diode irradiates the photoelectric receiving tube after a certain transmission distance, and the light intensity also attenuates during the transmission process. The attenuation is related to the installation height h between the two. The calculation formula for the transmission distance L is as follows:

[0189]

[0190] Generally, θ1 and θ2 are very small, and tanθ1 and tanθ2 are approximately equal to 1, so it can be approximately considered that the transmission distance is 2h.

[0191] The radiation intensity I e refers to the radiant flux within a unit solid angle Ω in a given direction and its calculation formula is as follows:

[0192]

[0193] The irradiance E e refers to the radiant flux φ within a unit area S, and its calculation formula is as follows:

[0194]

[0195] According to the geometric relationship, the solid angle is the ratio of the projected area S to the square of the radius r of the sphere, and its calculation formula is as follows:

[0196]

[0197] Among them, the transmission distance 2h corresponds to the ball radius r, and its calculation formula is as follows:

[0198]

[0199] From this, the irradiance E of the photoelectric receiving tube is analyzed e Is inversely proportional to the square of twice the installation height 2h. The higher the installation height, the farther the distance between the infrared light-emitting diode and the photoelectric receiving tube, and the smaller the radiation intensity received by the photoelectric receiving tube. When installing the sensor, the installation height has been determined and is a fixed value. Let the influence of the emission angle and the incident angle on the light transmission efficiency be η θ , then the fixed parameters such as the angle and height during installation have an impact on the irradiance E e The calculation formula for the influence is as follows:

[0200]

[0201] The light emitted by the infrared light-emitting diode will be reflected to the photoelectric receiving tube only after passing through the reflector. The reflection efficiency η of the reflector m Will also affect the light intensity transmission efficiency. In the actual production process, the reflection efficiency is often a variable factor and is related to the actual production conditions. After being affected by the reflection efficiency, the irradiance E e The calculation formula is as follows:

[0202]

[0203] In addition, the occlusion of the yarn will also affect the change of the light intensity. As Figure 3 Shown, let the diameter of the yarn be d, the area of the light source detected in the whole system be S0, x be the length of the detected surface, and y be the width of the detected surface. Then it is easy to get S0 = xy. When there is no yarn passing through the detection system, the light emitted by the infrared light-emitting diode is received by the photoelectric receiving tube without any yarn occlusion and interference. Let the irradiance received by the photoelectric receiving tube at this time be E e0 . When the yarn passes through, let the area occluded by the yarn to be measured be S1. It is easy to get S1 = y × d. Then the calculation formula for the irradiance Ee1 of the photoelectric receiving tube after being occluded is as follows:

[0204]

[0205] It can be seen from this that the thicker the yarn, the more the occluded measured light area and the more the light intensity attenuation.

[0206] Step 4: Calculate the photocurrent I0 of the photoelectric receiving tube according to the irradiance E of the photoelectric receiving tube e It includes the following content:

[0207] According to the characteristics of the photoelectric receiving tube, under ideal conditions, the photocurrent I0 of the photoelectric receiving tube is proportional to the irradiance E e The proportional relationship is as follows:

[0208] I0 = K2 × E e (14)

[0209] where K2 is the proportionality coefficient, and its value can be obtained by referring to the manual of the specific model of the photoelectric receiving tube. If K2 is not directly given in the manual, the relationship between the photocurrent I0 and the irradiance E e can be fitted by linear fitting.

[0210] Step Five: Construct the variation relationship between the photocurrent I0 of the photoelectric receiving tube and the reference voltage U0, which includes the following content:

[0211] Since the signal generated by the photoelectric receiving tube is a current signal and is very weak, the signal needs to be converted into a voltage signal and amplified. The amplifier circuit used is a transimpedance amplifier circuit, as Figure 4 shown, the U S terminal is the AD sampling amplified signal voltage of the ARM controller. It can be expressed as:

[0212] U S = U ref - I0(R1 + R2)(15)

[0213] Therefore, based on the above steps, the relationship between the voltage U DA adjustment of the infrared light-emitting diode and the sampled and amplified signal voltage U S (i.e., the actual voltage of the yarn signal) can be deduced as follows:

[0214]

[0215] Step Six:

[0216] When the photoelectric receiving tube operates at its typical value, its sensitivity to light intensity changes reaches the maximum. Based on this, an optimal reference voltage U0 of the yarn signal is deduced. Combining the above Steps Four and Five, substituting the recommended photocurrent of the specific model of the photoelectric receiving tube and the typical irradiance value, a range of reference voltages is calculated. When the yarn signal operates at this reference voltage, the best detection effect can be achieved. For example, using an infrared light-emitting diode with the model HIR89-01C / 1R and a photoelectric receiving tube with the model SH3600, when the photoelectric receiving tube receives infrared rays with a wavelength of 950 nm, the reverse bias voltage is 5 V, and the irradiance E e is 0.1 mW / cm 2, the photocurrent I0 is 200 μA, and a reference voltage U0 of about 1.43 V is obtained.

[0217] The first specific embodiment of the control method of the optoelectronic adaptive detection system for yarn information of the present invention:

[0218] A control method for an optoelectronic adaptive detection system for yarn information, realizing reference voltage control based on fuzzy PI. The specific process is as follows:

[0219] Based on the above-mentioned mathematical model of the optoelectronic sensor, among the key factors affecting the reference voltage of the yarn signal, the installation angles θ1 and θ2 and the installation height h are fixed values, and only need to be adjusted once when the weft accumulator is powered on. However, the reflection efficiency η of the reflector m is a variable factor. Therefore, this method is a new adaptive control method to adjust the reference voltage offset problem caused by the reduction of the reflector efficiency in real time. From the model, the voltage U of the light-emitting diode DA and the actual voltage U of the yarn signal S relationship, by adjusting the output U of the ARM DA to adjust the reference voltage U0 of the yarn signal in real time, mainly through the fuzzy PI algorithm.

[0220] Fuzzy PI is an algorithm that can automatically adjust the Kp and Ki parameters on the basis of ordinary PI regulation. The discretized formula expression of the ordinary PI algorithm:

[0221]

[0222] In actual applications, the control effect is often related to parameter adjustment. If the parameters are not adjusted well, the control effect will be poor. In a simple working condition environment, if the PI parameters are fixed after being adjusted well, good effects may be maintained. If in a complex and changeable working condition environment, fixing the parameters unchanged may not necessarily achieve the best closed-loop effect. Therefore, the fuzzy PI algorithm that can adjust the PI parameters in real time can achieve a good control effect.

[0223] As Figure 4 shown, use the previously calculated reference voltage U0 as the target voltage value of the fuzzy PI. The ARM controller AD samples to obtain the sampled amplified signal voltage Us, and after median filtering, U f is used as the feedback voltage of the fuzzy PI. The feedback voltage U f is subtracted from the target reference voltage U0 to obtain the voltage error value e, and the error differential is used to obtain the error change rate e c, input it into the fuzzy controller for fuzzy processing. During the fuzzy processing, in the numerical interval of the fuzzy subset, seven linguistic variables of Positive Big (PB), Positive Medium (PM), Positive Small (PS), Zero (ZO), Negative Small (NS), Negative Medium (NM), and Negative Big (NB) are adopted. The domain range (-6, 6) is set to correspond to the endpoints of the seven linguistic variables respectively. The range of the voltage error value e is set to (-1, 1), which is mapped to the domain, and then its membership degree is determined through the membership function. The triangular membership function is adopted. For example, when the mapped value is -3.5, the membership value of NS is 0.25 and the membership value of NM is 0.75. Similarly, for the error change rate e c its membership degree is also determined. After fuzzy processing, a fuzzy rule table is established based on experience, and finally the defuzzification is performed to obtain the change values of Kp and Ki.

[0224]

[0225] The fuzzy PI algorithm operates in the ARM, and the calculated result is output through U DA in the form of an analog voltage to control the voltage of the infrared light-emitting diode. As can be seen from the previous part of the optoelectronic sensor modeling, U DA can affect the reference voltage U0. When the reflection efficiency η of the reflector m decreases, increase U DA to compensate for the offset of the reference voltage. Finally, after amplification and filtering, the compensated reference voltage is used as the feedback voltage U f to form a closed-loop control.

[0226] As Figure 5 shown, the second specific embodiment of the control method for the optoelectronic adaptive detection system for yarn information of the present invention:

[0227] A control method for an optoelectronic adaptive detection system for yarn information, based on comparator voltage control with adaptive adjustment according to yarn specifications. The specific process is as follows:

[0228] When there is no yarn passing through, the yarn signal is a reference voltage signal. When the yarn passes through, the occlusion of the yarn will affect the irradiance of the photoelectric receiving tube, and thus the photocurrent I affected by the yarn occlusion is calculated Z size, and its specific formula is as follows:

[0229]

[0230] Among them, I0 is the magnitude of the reference photocurrent not blocked by the yarn, d is the yarn diameter, and x is the width of the detected light source surface. Therefore, when there is no yarn passing through the detection area, the photocurrent generated by the highest irradiance received by the photoelectric receiving tube is the largest. When there is a yarn passing by, the irradiance decreases and the photocurrent changes; when the yarn is thicker and has a larger diameter, the irradiance is lower, and then the change in photocurrent is larger and the generated signal is stronger. Correspondingly, the amplitude of the yarn amplification signal U S is also larger. Similarly, different colors of the yarn have different absorption and blocking degrees for infrared rays, which will also affect the amplitude of the yarn amplification signal U S . From Figure 6 circuit analysis, it can be known that the amplified signal U S can be expressed as

[0231]

[0232] Among them, U ref is the reference voltage at the positive input terminal of the previous-stage amplifier mentioned above, R1 is the current-limiting resistor on the feedback network of the previous-stage operational amplifier, and R2 is the variable resistor in series with R1. Through the structural analysis of the conditioning circuit in Figure 7 , combined with the analysis of virtual short and virtual open as well as the capacitive dynamic circuit, the transfer function relationship between U1 and U2 is further deduced. The input network of the operational amplifier is a capacitor C2 in series with a resistor R3, then the input impedance Z in can be expressed as

[0233]

[0234] The feedback network is a resistor R4 in parallel with a capacitor C3, then the feedback impedance is Z f can be expressed as

[0235]

[0236] According to the principle of the operational amplifier, the input current is equal to the feedback network current, and the relationship formula between U S and U1 can be listed:

[0237]

[0238] Among them, U ref1 is the reference voltage of the operational amplifier of the conditioning circuit, which is ignored during the dynamic analysis of the circuit. Then the transfer function G(s) of U S (s) and U1(s) is

[0239]

[0240] Among them, s is the complex frequency variable in the Laplace transform. Through the above analysis, it is deduced that when the yarn is blocked, the change in the yarn diameter d leads to the derivation of the amplified signal U S , and then after passing through G1(s), the detection signal U1 is derived. According to the minimum value U 1min of the yarn detection signal U1, the comparison voltage U C of the comparator is set, and the pulse signal of the yarn can be detected. When U C is greater than U 1min by too much, the response speed of the yarn will be reduced. When U C is greater than U 1min by too little, the pulse width will be less than the sampling frequency of the ARM, and the pulse signal cannot be detected. Therefore, combining the sampling frequency and pulse width of the ARM, assuming that U h is the appropriate voltage increment, the corresponding calculation formula is as follows:

[0241] U C = U 2min + U h (25)

[0242] Then the relationship between the final comparison voltage U C and the yarn diameter is shown in the following formula:

[0243]

[0244] In the actual application process, the signal of the yarn specification change is often difficult to collect. The comparison voltage U S can be calculated by collecting the amplified signal U C , and the relationship between U S and U C can be deduced

[0245]

[0246] Finally, through the above calculation and analysis, when the yarn specification changes, the comparison voltage U S of the comparator can be adaptively changed with the yarn specification after the amplified signal U C and the ARM calculation

[0247] In summary, the present invention first proposes a mathematical model of an optoelectronic sensor based on the reflection efficiency, emission and reception angles, and installation height, and conducts modeling through this mathematical model to study the variable factors in the optoelectronic detection device: the reflection efficiency of the reflector and the influence of different specifications of yarns on the yarn signal. At the same time, an optimal reference voltage range for detecting the yarn signal is also provided

[0248] Further, based on the above-mentioned mathematical model of the photoelectric sensor, the present invention provides a new adaptive control method to adjust in real time the problem of reference voltage offset caused by the reduction of the mirror efficiency. Further, the target voltage in this method is the reference voltage U0 calculated by the mathematical model of the photoelectric sensor, and the feedback voltage is the yarn signal U amplified and filtered by the ARM processor through the AD sampling and amplification circuit. f The closed-loop control algorithm is the fuzzy PI algorithm.

[0249] Meanwhile, based on the above-mentioned mathematical model of the photoelectric sensor, the present invention provides a new adaptive control method to adjust in real time the comparator voltage for the change in signal amplitude caused by the change in yarn specifications. Further, in this method, through the method of model simulation, the relationship between the yarn signal amplitude and the comparison voltage U C is found. The sampling voltage U S of the ARM processor extracts the yarn amplitude, and after calculation, the output real-time adjusted comparison voltage U C is obtained.

[0250] An equipment embodiment applying the method of the present invention:

[0251] An electronic device, which includes:

[0252] One or more processors;

[0253] A storage device for storing one or more programs;

[0254] When the one or more programs are executed by the one or more processors, the one or more processors implement the above-mentioned photoelectric adaptive detection system, modeling and control method for yarn information.

[0255] A computer medium embodiment applying the method of the present invention:

[0256] A computer-readable storage medium, on which a computer program is stored, and when the program is executed by a processor, it implements the above-mentioned photoelectric adaptive detection system, modeling and control method for yarn information.

[0257] Those skilled in the art should understand that the embodiments of the present application can be provided as methods, systems, and computer program products. Therefore, the present application can adopt the form of a complete hardware embodiment, a complete software embodiment, or an embodiment combining software and hardware aspects. Moreover, the present application can adopt the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk storage, optical storage, etc.) containing computer-usable program codes.

[0258] The present application is described with reference to the flowcharts and / or block diagrams of methods, apparatuses (systems), and computer program products according to embodiments of the present application. It should be understood that each flow and / or block in the flowchart and / or block diagram, and the combination of flows and / or blocks in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to the processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing devices to generate a machine, so that the instructions executed by the processor of the computer or other programmable data processing devices generate a means for implementing the functions specified in one flow Figure 1 one flow or multiple flows and / or blocks Figure 1 or in one block or multiple blocks.

[0259] These computer program instructions can also be stored in a computer-readable memory that can direct a computer or other programmable data processing device to work in a specific manner, so that the instructions stored in the computer-readable memory generate a manufactured article including an instruction means, and the instruction means implements the functions specified in one flow Figure 1 one flow or multiple flows and / or blocks Figure 1 or in one block or multiple blocks.

[0260] These computer program instructions can also be loaded onto a computer or other programmable data processing device, so that a series of operation steps are executed on the computer or other programmable device to generate a computer-implemented process, and thus the instructions executed on the computer or other programmable device provide steps for implementing the functions specified in one flow Figure 1 one flow or multiple flows and / or blocks Figure 1 or in one block or multiple blocks.

[0261] The model in the present application is an object that constitutes an objective description of the morphological structure by means of an entity or a virtual representation. The object is not equal to an object, and is not limited to an entity and a virtual object. It can be a data processing function, a software program, a processing mode, a usage method, an operation mode, a work flow, an application process, an electronic hardware, a circuit module, a processing system, a system imitation, or a simulation object.

[0262] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and are not intended to limit them. Although the present invention has been described in detail with reference to the above embodiments, those of ordinary skill in the art can still modify or equivalently replace the specific implementation manners of the present invention. Any modification or equivalent replacement without departing from the spirit and scope of the present invention shall be covered by the protection scope of the claims of the present invention.

Claims

1. An optoelectronic adaptive detection system for yarn information, characterized in that: It includes: A controllable power supply module, an optoelectronic sensor mathematical modeling module, an amplifier circuit module, a conditioning circuit module, a comparison circuit module, an ARM controller, and an optoelectronic sensor module; The input of the controllable power supply module is the analog voltage U output by the ARM controller DA , The input of the optoelectronic sensor mathematical modeling module is the voltage U output by the controllable power supply module. The optoelectronic sensor module converts the collected yarn passing information into a photocurrent signal I0. The input signal of the amplifier circuit module is the photocurrent signal I0 of the optoelectronic sensor module. The input of the conditioning circuit module is the yarn amplified signal voltage U output by the amplification circuit module S , The comparison circuit module has two inputs, namely the yarn detection signal voltage U1 output by the conditioning circuit module and the comparison voltage U calculated and output by the ARM controller. C , The ARM controller has two inputs, which respectively collect the amplified signal U output by the amplifier circuit module through AD sampling S , and collect the pulse signal U2 output by the comparison circuit module through IO detection; The optoelectronic sensor module includes an infrared light-emitting diode, a photoelectric receiving tube, a reflecting mirror, and a light-shielding body, and its parameters include the reflecting efficiency η of the reflecting mirror m , the installation height h, and the installation angles θ1 and θ2.

2. A modeling method for an optoelectronic adaptive detection system of yarn information, characterized in that: Applied to an optoelectronic adaptive detection system of yarn information as described in claim 1, the modeling method includes the following steps: Step 1, according to the output voltage U of the ARM controller, calculate the infrared light-emitting diode current I through the pre-built exponential diode model DA , Step 2: Using the pre-constructed infrared light-emitting diode characteristic model, calculate the infrared light-emitting diode radiation intensity I based on the infrared light-emitting diode current I e : Step 3: Using the pre-constructed light intensity transmission model, calculate the irradiance E of the photoelectric receiving tube based on the radiation intensity I of the infrared light-emitting diode e ; e ​ Step 4: Use the pre-constructed linear fitting model to process the irradiance E of the photoelectric receiving tube e to obtain the photocurrent I0 of the photoelectric receiving tube; Step five, based on the pre-constructed signal conversion model, determine the relationship between the photocurrent I0 of the optoelectronic receiving tube and the reference voltage, obtain the reference voltage U0 of the yarn signal, and realize the modeling of the optoelectronic adaptive detection system of yarn information.

3. The modeling method for an optoelectronic adaptive detection system of yarn information as described in claim 2, characterized in that: Step 1, according to the output voltage U of the ARM controller, the method for calculating the current I of the infrared light-emitting diode through the pre-built exponential diode model is as follows: DA , as follows: Since the light-emitting diode is an exponential diode in series with the current sensor, according to the characteristics of the exponential diode, the calculation relationship between the diode current I and the diode voltage U of the exponential diode model is constructed. DA The calculation relationship is as follows: where q is the elementary charge of an electron, with a value of 1.602176×10 -19 Coulomb, k is the Boltzmann constant, with a value of 1.3806503×10 -23 J / K; IS is the saturation current, N is the emission coefficient, and T m1 is the temperature parameter of the diode; The calculation formula for the saturation current IS is as follows: Where, [V1, I1] and [V2, I2] are two parameter points; The calculation formula for the emission coefficient N is as follows: where V t = kT m1 / q, By calculating the relational expression and based on the output voltage U of the ARM controller DA calculate the current I of the infrared light-emitting diode.

4. The modeling method for an optoelectronic adaptive detection system of yarn information as described in claim 2, characterized in that: Step 2: Using the pre-built infrared light-emitting diode characteristic model, calculate the infrared light-emitting diode radiation intensity I based on the infrared light-emitting diode current I e The method is as follows: According to the characteristics of the infrared light-emitting diode, create the radiation intensity I of the infrared light-emitting diode e The proportional relationship with the current I, and the calculation formula of the proportional relationship is as follows: I e = K1 × I Where K1 is a proportionality coefficient, which is obtained by linearly fitting the relationship between the radiation intensity I e and the current I, and the fitting process is as follows: Take I e - n coordinate points in the I relationship diagram: A1(I e1 , I1), A2(I e2 , I2), …… A n (I en , I n ); Perform a linear fit through the origin for the coordinate points; Calculate the distance L from the fitted line to each point, and its calculation formula is as follows: Among them, I ei is the radiation intensity of the i-th coordinate point, and I i is the current of the i-th coordinate point; After substituting the data of each coordinate point, solve for the proportionality coefficient K1 when L is minimized. Substitute the solved proportionality coefficient K1 and the current I of the infrared light-emitting diode into the calculation formula of the proportional relationship to calculate the radiation intensity I e .

5. The modeling method for an optoelectronic adaptive detection system of yarn information as described in claim 2, characterized in that: Step 3: Using the pre-constructed light intensity transmission model, according to the radiation intensity I of the infrared light-emitting diode e , the method for calculating the irradiance E of the photoelectric receiving tube e is as follows: According to the light transmission path of the infrared light-emitting diode, screen the relevant variables that affect the irradiance E of the photoelectric receiving tube e The relevant variables include the angle θ1, the angle θ2, the installation height h, the reflection efficiency η m and the yarn diameter d and color passing through the sensor; Based on the fact that the infrared light emitted by the infrared light-emitting diode irradiates the optoelectronic receiving tube only after a certain transmission distance, and the light intensity also attenuates during the transmission process; the attenuation is related to the installation height h between the two, and thus construct the calculation formula for the transmission distance L, specifically as follows: Since both θ1 and θ2 are very small, tanθ1 and tanθ2 are approximately equal to 1, and according to the calculation formula for the transmission distance, the transmission distance is 2h; Radiation intensity I e refers to the radiant flux within a unit solid angle Ω in a given direction The calculation formula is as follows: Irradiance E e refers to the radiant flux within a unit area S and its calculation formula is as follows: According to the geometric relationship, the solid angle is the ratio of the projected area S to the square value of the sphere radius r, and its calculation formula is as follows: Construct the first irradiance calculation formula of the photoelectric receiving tube irradiance E according to the transmission distance 2h corresponding to the sphere radius r, as follows: e Specifically as follows: According to the first calculation formula, the influence characteristics of the irradiance E of the photoelectric receiving tube are analyzed e are obtained; The influencing characteristics include the following: Radiance E of the photoelectric receiving tube e It is inversely proportional to the square of twice the installation height 2h; the higher the installation height, the farther the distance between the infrared light-emitting diode and the photoelectric receiving tube, and the smaller the radiation intensity received by the photoelectric receiving tube; when installing the sensor, the installation height has been determined and is a fixed value; According to the influence characteristics and the influence of the emission angle and the incident angle on the light transmission efficiency η θ , create the irradiance E of the photoelectric receiving tube with fixed angle and height parameters during installation e The influence expression, that is, the second irradiance calculation formula, is as follows: Since the light emitted by the infrared emitter needs to pass through the reflector before it can be reflected to the photoelectric receiver, the reflection efficiency η of the reflector m will also affect the light intensity transmission efficiency. Optimize the second illuminance calculation formula to obtain the third illuminance calculation formula, and its calculation formula is as follows: Based on the fact that the occlusion of the yarn will also affect the change of the light intensity, optimize the third illuminance calculation formula to obtain the fourth illuminance calculation formula, and its calculation formula is as follows: S0 = x × y S1 = y × d Among them, E e0 is the irradiance received by the photoelectric receiver when the light emitted by the infrared emitter passes through without being blocked or interfered by any yarn. E e1 is the irradiance of the photoelectric receiver after being blocked when the yarn passes through. d is the diameter of the yarn, S0 is the area of the light source detected in the whole system, x is the length of the detected surface, y is the width of the detected surface, and S1 is the area blocked by the yarn to be measured.

6. The modeling method for an optoelectronic adaptive detection system of yarn information as described in claim 2, characterized in that: Step 4, using the pre-built linear fitting model, process the irradiance E of the photoelectric receiving tube e The method for obtaining the photocurrent I0 of the photoelectric receiving tube is as follows: According to the characteristics of the photoelectric receiving tube, the calculation formula for the proportional relationship between the photocurrent I0 and the irradiance E of the photoelectric receiving tube is created, which is specifically as follows: e ​ I0 = K2 × E e where K is the proportionality coefficient, which is obtained by fitting the relationship between the photocurrent I0 and the irradiance E e obtained 7. The modeling method for an optoelectronic adaptive detection system of yarn information as described in claim 2, characterized in that: Step five, the method for determining the relationship between the photocurrent I0 of the optoelectronic receiving tube and the reference voltage based on the pre-constructed signal conversion model to obtain the reference voltage U0 of the yarn signal is as follows: According to the signal generated by the photoelectric receiving tube being a current signal and being very weak, a transimpedance amplifier circuit calculation formula is constructed to convert the current signal into a voltage signal and amplify the signal. The specific expression of the transimpedance amplifier circuit calculation formula is as follows: U S = U ref - I0(R1 + R2) Among them, U S is the voltage of the amplified signal sampled by the ARM controller AD, U ref is the reference voltage at the positive input terminal of the amplifier, R1 is the current-limiting resistor on the feedback network, and R2 is the variable resistor in series with R1; Construct the voltage U of the infrared light-emitting diode according to the transimpedance amplifier circuit calculation formula DA Adjust the voltage U between the amplified signal voltage of the yarn sampling and S That is, the voltage conversion relationship between the actual voltage of the yarn signal is as follows: According to the voltage conversion relationship, substituting the recommended photocurrent and the typical irradiance value of a specific model of photoelectric receiving tube, the range of a reference voltage U0 is calculated so that when the yarn signal operates under this reference voltage, the best detection effect can be achieved.

8. A control method for a photoelectric adaptive detection system for yarn information, characterized in that: Applied to a photoelectric adaptive detection system for yarn information as described in claim 1, a reference voltage control method based on fuzzy PI and a comparator voltage control method based on adaptive adjustment according to yarn specifications; The reference voltage control method is used to make real-time adjustment of the reference voltage offset change caused by the reduction of the mirror efficiency; The comparator voltage control method is used to make real-time adjustment of the signal amplitude change caused by the change of yarn specifications.

9. A control method for a photoelectric adaptive detection system for yarn information as described in claim 8, characterized in that: The reference voltage control method based on fuzzy PI includes the following contents: The calculated reference voltage value U0 is used as the target voltage value of the fuzzy PI controller, and the AD sampling yarn amplification signal U of the ARM controller is used. S U obtained after filtering f is used as the feedback voltage U of the fuzzy PI controller. f The feedback voltage U f is subtracted from the target reference voltage U0 to obtain the voltage error value e, and the error derivative is used to obtain the error change rate e. c It is input into the fuzzy controller, where it is fuzzified and a closed-loop control is adopted to make the photoelectric sensor work in an optimal state and the detection circuit work in an optimal state. Or / and, the comparator voltage control method based on adaptive adjustment according to yarn specifications includes the following contents: AD sampling yarn amplified signal U using an ARM controller S , using this signal as the calculation basis for the comparison voltage in the subsequent comparison circuit module, establishing the transfer function of the input and output of the conditioning circuit through circuit analysis, and finding the relationship between the change in yarn specifications and the comparison voltage, which includes the yarn amplified signal U S and the comparison voltage U C relationship formula, and then realizing real-time adjustment of the comparison voltage to adapt to the change in signal amplitude caused by different yarn specifications.

10. A control method for a photoelectric adaptive detection system for yarn information as described in claim 9, characterized in that: A fuzzy PI controller is used for processing, and the closed-loop control method is as follows: Based on the voltage U of the light-emitting diode DA and the actual voltage U of the yarn signal S a discrete formula of the fuzzy PI algorithm is constructed to adjust the output U of the ARM controller DA to adjust the reference voltage U0 of the yarn signal in real time; The expression of the discrete formula of the fuzzy PI algorithm is as follows: Among them, K p and K i are algorithm parameters, U(k) is the output voltage after fuzzy PI calculation, and e(k) is the error between the actual value and the theoretical value of the reference voltage; At the same time, seven linguistic variables for setting the fuzzy subset values are set, including positive big PB, positive middle PM, positive small PS, zero ZO, negative small NS, negative middle NM, and negative big NB. The set domain range (-6, 6) corresponds to the endpoints of the seven linguistic variables respectively. The range of the voltage error value e is set to (-1, 1), and it is mapped to the domain; Then its membership degree is determined through the triangular membership function; Then, a fuzzy rule table is established based on experience, and finally, defuzzification is performed to obtain the change values of K p , K i , and its expression is as follows: Where K p0 is the initial value ΔK p of K p is the change value of K p where K i0 is the initial value ΔK i of K i is the change value of K i The fuzzy PI algorithm operates in the ARM, and the calculated result is output through U DA in the form of an analog voltage to control the voltage of the infrared light-emitting diode. When the reflection efficiency η m of the reflector decreases, U DA is increased to compensate for the offset of the reference voltage; Finally, after amplification and filtering, the compensated reference voltage is used as the feedback voltage U f , forming a closed-loop control; Or / and, the method for adapting to the signal amplitude change caused by different yarn specifications is as follows: When there is no yarn passing through, the yarn signal is a reference voltage signal. When the yarn passes through, the blocking of the yarn will affect the irradiance of the photoelectric receiving tube, and the photocurrent I affected by the yarn blocking is calculated accordingly. Z The specific formula for its magnitude is as follows: Among them, I0 is the magnitude of the reference photocurrent not blocked by the yarn, d is the yarn diameter, and x is the width of the surface of the light source to be detected; the amplified signal U S is expressed as: where U ref is the reference voltage of the positive input terminal of the amplifier at the previous stage, R1 is the current-limiting resistor on the feedback network of the operational amplifier at the previous stage, and R2 is a variable resistor in series with R1; Through the structural analysis of the conditioning circuit, combined with the analysis of virtual short and virtual open as well as the dynamic circuit of the capacitor, the transfer function relationship between U S and U1 is deduced; Since the input network of the operational amplifier is a series connection of capacitor C2 and resistor R3, the input impedance Z in is expressed as: Since the feedback network is a parallel combination of resistor R4 and capacitor C3, the feedback impedance is Z f It is expressed as: According to the principle of the operational amplifier, the input current is equal to the feedback network current, and the relationship between U S and U1 is as follows: Among them, U ref1 is the reference voltage of the conditioning circuit operational amplifier and is ignored during the dynamic analysis of the circuit; U S (s) and the transfer function G(s) of U1(s) is: Wherein, s is the complex frequency variable in the Laplace transform; Set U in combination with the sampling frequency and pulse width of ARM h to an appropriate voltage increment, and its expression is as follows: U C = U 2min + U h Then the final comparison voltage U C has the following relationship with the yarn diameter as shown in the formula below: Since it is difficult to collect the signal of the yarn specification change during the actual application process, the amplified signal U of the yarn is collected S to calculate the comparison voltage U C , then U S and U C The relationship between them is as follows: Finally, through the above calculation and analysis, when the yarn specification changes, by sampling the amplified signal U of the yarn S and after ARM calculation, the comparator can compare the voltage U C to adaptively change with the yarn specification.

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