Method, system and equipment for monitoring running state of solid state disk and storage medium

Abstract

The invention discloses a method, system and equipment for monitoring the running state of a solid state disk and a storage medium, and belongs to the technical field of monitoring the running state of the solid state disk, and the method comprises the following steps: S1, monitoring core indexes during running of different solid state disks, including a health degree index, a performance index and an environment and hardware index; field mapping tables are established for different models of solid state disks, and SMART attributes of different manufacturers are uniformly converted into self-defined indexes; the main control temperature, the writing speed, the reading error rate and the environment temperature are combined, and the temperature values of different areas of the NAND are predicted; and the temperature, the voltage and the write-in magnification are combined to correct the residual life of the solid state disk. According to the method, the SMART attribute indexes are unified, the NAND temperature is accurately predicted, and the service life is predicted in combination with multiple factors, so that the operation and maintenance efficiency of the solid state disk can be effectively improved, and a safety guarantee is provided for stable operation of the solid state disk.

Description

Technical Field

[0001] The present invention relates to the technical field of solid-state drive (SSD) operation status monitoring. Specifically, it relates to a method, system, device, and storage medium for monitoring the operation status of an SSD. Background Art

[0002] In the aspect of SSD operation status monitoring, there are many problems to be solved urgently. First of all, there are great differences in the definition of SMART attributes of SSDs among different manufacturers; the units and calculation methods of each index are diverse. For example, for the remaining life, some manufacturers present it in specific time lengths, while others use vague grades; the read and write speed units also have various forms such as KB / s and GB / s. This non-uniformity makes it difficult to directly understand and compare data of cross-brand hard disks during monitoring. When technicians face a large number of hard disks of different brands and models, they cannot quickly conduct horizontal analysis and accurately locate devices with abnormal operation or performance degradation, greatly reducing the efficiency and accuracy of the operation status detection of a large number of hard disks and bringing great difficulties to the centralized operation and maintenance management of hard disks.

[0003] Secondly, in terms of temperature monitoring, traditional monitoring methods have serious defects; most tools can only read the temperature of the SSD main controller, and as a key storage component, the local high temperature of NAND flash memory is often difficult to be captured in time due to insufficient sensor coverage; the local high temperature of NAND flash memory may cause a series of problems, such as accelerating chip aging and reducing the reliability of data storage, thus threatening the stability of the device and data security; however, due to the lack of effective monitoring means, these potential overheating risks are often undetected.

[0004] Finally, regarding the prediction of the remaining life of SSDs, the existing methods have poor accuracy; the actual service life of SSDs is affected by a variety of factors, such as temperature, voltage, write amplification ratio, etc.; however, traditional prediction methods do not fully consider these key factors, resulting in a large deviation between the prediction results and the actual situation. This makes it difficult for users to plan data storage, device replacement, etc. in advance, and may cause serious consequences such as data loss due to accidental hard disk damage.

[0005] In summary, there are problems such as difficult data interpretation, incomplete temperature monitoring, and inaccurate life prediction in the current field of SSD operation status monitoring. There is an urgent need for a comprehensive, accurate, and efficient method, system, device, and storage medium for monitoring the operation status of SSDs to meet the growing data storage and management needs. Summary of the Invention

[0006] In view of the problems in the related art, the present invention provides a method, system, device, and storage medium for monitoring the operation status of an SSD to overcome the above-mentioned technical problems existing in the existing related technologies.

[0007] To this end, the specific technical solution adopted by the present invention is as follows: A method for monitoring the operating state of a solid-state drive, the method comprising the following steps: S1. Monitor the core indicators during the operation of different solid-state drives, including health indicators, performance indicators, environmental and hardware indicators; S2. Establish a field mapping table for different models of solid-state drives, and uniformly convert the SMART attributes of different manufacturers into custom indicators; S3. Combine the main control temperature, write speed, read error rate, and environmental temperature to predict the temperature values of different regions of NAND; S4. Combine the temperature, voltage, and write amplification factor to correct the remaining life of the solid-state drive.

[0008] As a preferred embodiment, the steps for monitoring the core indicators during the operation of different solid-state drives, including health indicators, performance indicators, environmental and hardware indicators, are as follows: S11. Monitor the health indicators, including remaining life, total amount of written data, number of bad blocks and spare blocks, and SSD wear leveling state; The remaining life is calculated by the programming cycles of the NAND flash memory and the life prediction provided by the manufacturer.

[0009] S12. Monitor the performance indicators, including read and write speeds, latency, interface error rate, read and write error rates; S13. Monitor the environmental and hardware states, including main control temperature, environmental temperature, and power supply state, where the power supply state includes the number of abnormal power outages and voltage data.

[0010] As a preferred embodiment, the steps for establishing a field mapping table for different models of solid-state drives and uniformly converting the SMART attributes of different manufacturers into custom indicators are as follows: S21. Convert the remaining life data of each hard disk into a unified ratio of 0% to 100%; uniformly convert the total write amount into TB, convert the number of bad blocks into an integer, convert the number of spare blocks into a percentage; convert the wear leveling into 0-10 points; S22. Convert the read and write speeds of each hard disk into MB / s, unify the latency into milliseconds; convert the interface error into the number of times; convert the read and write error rates into percentages; S23. Unify the temperature into degrees Celsius and count the number of power outages, and at the same time count the number of times the voltage exceeds ±10%.

[0011] As a preferred embodiment, the steps for combining the main control temperature, write speed, read error rate, and environmental temperature to predict the temperature values of different regions of NAND are as follows: S31. Divide the NAND chip into edge, center, and interlayer regions, and analyze the distribution of the number of erase / write cycles through SMART data. S32. Construct a thermodynamic model based on the host controller temperature, write speed, read error rate, and ambient temperature, and calculate the temperature values of different regions of the NAND chip. The specific formula is: ; Where, is the calculated temperature value of the NAND hot spot region, is the ambient temperature, is the temperature rise between the host controller and the NAND, and , where, is the host controller temperature, is the thermal resistance coefficient reflecting the heat conduction efficiency from the host controller to the NAND, is the temperature rise caused by writing, and , where, is the write speed, is the reference power consumption, is the thermal resistance coefficient reflecting the efficiency of power consumption conversion to temperature rise, is the additional temperature rise caused by the read error rate, and , where, are the read error rate and the threshold of the read error rate respectively, is the error correction temperature rise coefficient; The write speeds of different regions of the NAND chip are different, so the temperatures will also vary.

[0012] S33. Process the temperature data of different regions of the NAND chip to obtain the final temperature.

[0013] As a preferred embodiment, the processing of the temperature data of different regions of the NAND chip to obtain the final temperature includes the following steps: S331. Calculate the final temperature. The specific formula is: ; Where, is the final temperature, are the temperatures of the edge, center, and interlayer of the NAND chip respectively, are the weight coefficients of the temperatures of each region, and the values are 0.2, 0.3, and 0.5 respectively.

[0014] As a preferred embodiment, the combination of temperature, voltage, and write amplification factor to correct the remaining life of the solid-state drive includes the following steps: S41. Calculate WAF, and , where are the NAND write amount and the host write amount respectively; S42. Construct a comprehensive life correction model, the specific formula is: ; in, is the remaining life after calculation, is the manufacturer's nominal write amplification, Test the ambient temperature for manufacturers. For abnormal power outage times and voltage exceeding ±10% of the nominal value, are the temperature coefficient, WAF coefficient, and voltage coefficient; S43, outputting the remaining life data.

[0015] A system for monitoring the operating status of a solid state hard disk comprises the following modules: a data monitoring module, a data conversion module, a temperature prediction module, and a remaining life prediction module, wherein the data monitoring module, the data conversion module, the temperature prediction module, and the remaining life prediction module are sequentially connected in communication; The data monitoring module is used to monitor the core indicators of different solid-state drives, including health indicators, performance indicators, environment and hardware indicators; The data conversion module is used to convert the properties of different solid-state drives into custom indicators; The temperature prediction module divides the NAND into different areas, and combines the main control temperature with the write speed, the read error rate, and the ambient temperature to predict the temperature of different areas of the NAND; The remaining life prediction module combines temperature, voltage, and write amplification factor to correct the remaining life of the solid state drive.

[0016] A device for monitoring the operating status of a solid state hard disk comprises a memory and a processor, and computer instructions stored in the memory and running on the processor. When the computer instructions are run by the processor, any of the above methods is performed.

[0017] A storage medium for monitoring the operating status of a solid state hard disk is used to store computer instructions. When the computer instructions are executed by a processor, any of the methods described above is completed.

[0018] The beneficial effects of the present invention are: 1. By establishing a field mapping table for solid-state drives (SSDs) of different models and uniformly converting SMART attributes of different manufacturers into custom metrics, the present invention can effectively solve the data interpretation dilemma caused by inconsistent metrics and significant differences in manufacturer definitions. Since the units and calculation methods of SMART attributes of each manufacturer are different, for example, the remaining lifespan is presented in specific durations for some and in fuzzy levels for others, and there are also various forms of read / write speed units such as KB / s and GB / s, it is difficult to directly understand the data of cross-brand hard drives during monitoring. Through unified conversion, all hard drive data is standardized under a consistent standard, eliminating differences in units and calculation logics, presenting the data on the same scale, facilitating technicians to quickly conduct horizontal comparative analysis when facing a large number of hard drives of different brands and models, accurately locating devices with abnormal operation and performance degradation, and significantly improving the efficiency and accuracy of detecting the operating status of a large number of hard drives, providing a solid data foundation for centralized operation and maintenance management of hard drives. 2. By dividing the NAND chip into edge, center, and interlayer regions, combining the number of erase / program cycles with the write speed to obtain the predicted temperature of different regions, and then obtaining the final temperature through weighted processing, the present invention can make up for the defects of traditional monitoring methods. Most tools can only read the temperature of the main controller, and the local high temperature of NAND flash is often difficult to be captured in time due to insufficient sensor coverage, which makes the potential overheating risk of the chip unable to be detected, thus threatening the stability of the device and data security. By predicting the temperature of different regions, the edge, center, interlayer, etc. of the NAND chip where local high temperature is likely to occur can be accurately obtained. Combining the final temperature obtained through weighted processing can more comprehensively and accurately reflect the actual thermal state of the NAND chip. 3. By using a combination of voltage, write amplification factor, and predicted temperature to correct the remaining lifespan of the solid-state drive, the present invention can significantly improve the accuracy of lifespan prediction. By calculating the WAF, the relationship between the NAND write volume and the host write volume can be accurately measured, reflecting the consumption degree of the actual write on the flash memory. When constructing a comprehensive lifespan correction model, factors such as temperature, WAF, abnormal power-off, and voltage fluctuation are included, considering various key real situations that affect the lifespan of solid-state drives, and further outputting more reliable remaining lifespan data, facilitating users to plan data storage and device replacement in advance. Description of the Drawings

[0019] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required for use in the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can be obtained based on these drawings.

[0020] Figure 1 It is a flowchart of a method for monitoring the operating status of a solid-state drive according to an embodiment of the present invention. Detailed implementation manners

[0021] To further illustrate each embodiment, the present invention provides accompanying drawings, which are part of the disclosure of the present invention. They are mainly used to illustrate the embodiments and can be combined with the relevant descriptions in the specification to explain the operating principles of the embodiments. With reference to these contents, those of ordinary skill in the art should be able to understand other possible implementation manners and the advantages of the present invention. The components in the drawings are not drawn to scale, and similar component symbols are usually used to represent similar components.

[0022] According to an embodiment of the present invention, there is provided a method, a system, a device, and a storage medium for monitoring the operating state of a solid-state drive.

[0023] Now, the present invention will be further described in conjunction with the accompanying drawings and specific implementation manners. As Figure 1 shown, a method for monitoring the operating state of a solid-state drive according to an embodiment of the present invention includes the following steps: S1. Monitor the core indicators during the operation of different solid-state drives, including health indicators, performance indicators, environmental and hardware indicators; Furthermore, monitoring the core indicators during the operation of different solid-state drives, including health indicators, performance indicators, environmental and hardware indicators, includes the following steps: S11. Monitor the health indicators, including remaining life, total written data, number of bad blocks and spare blocks, and SSD wear leveling status; S12. Monitor the performance indicators, including read / write speed, latency, interface error rate, and read / write error rate; S13. Monitor the environmental and hardware status, including main controller temperature, ambient temperature, and power supply status. Among them, the power supply status includes the number of abnormal power outages and voltage data.

[0024] S2. Establish a field mapping table for different models of solid-state drives, and uniformly convert the SMART attributes of different manufacturers into custom indicators; Furthermore, establishing a field mapping table for different models of solid-state drives and uniformly converting the SMART attributes of different manufacturers into custom indicators includes the following steps: S21. Convert the remaining life data of each hard disk into a unified ratio of 0% to 100%; uniformly convert the total written amount into TB, convert the number of bad blocks into an integer, convert the number of spare blocks into a percentage; convert the wear leveling into 0 - 10 points; S22. Convert the read / write speed of each hard disk into MB / s, unify the latency into milliseconds; convert the interface error into the number of times; convert the read / write error rate into a percentage; S23. Unify the temperature into degrees Celsius and count the number of power outages, and at the same time count the number of times the voltage exceeds ±10%.

[0025] It should be noted that converting the data of different hard disks into custom metrics can effectively eliminate the interference caused by differences in data units and magnitudes, making the performance of each hard disk directly comparable; unifying the units avoids misjudgment caused by different units and standardizes the numerical range; presenting the data intuitively on the same scale; thus, users can quickly compare the key indicators such as the health status, read / write performance, and stability of each hard disk horizontally, easily identify devices with excellent performance or potential risks, and greatly improve the data evaluation efficiency.

[0026] S3. Combine the host temperature, write speed, read error rate, and ambient temperature to predict the temperature values of different regions of NAND; Furthermore, combining the host temperature, write speed, read error rate, and ambient temperature to predict the temperature values of different regions of NAND includes the following steps: S31. Divide the NAND chip into edge, center, and interlayer regions, and analyze the distribution of erase / write counts through SMART data; S32. Construct a thermodynamic model based on the host temperature, write speed, read error rate, and ambient temperature, and calculate the temperature values of different regions of the NAND chip. The specific formula is: ; Where, is the calculated temperature value of the NAND hot spot region, is the ambient temperature, is the temperature rise between the host and NAND, and , where, is the host temperature, is the thermal resistance coefficient reflecting the heat conduction efficiency from the host to NAND, is the temperature rise caused by writing, and , where, is the write speed, is the reference power consumption, is the thermal resistance coefficient reflecting the efficiency of power consumption converted to temperature rise, is the additional temperature rise caused by the read error rate, and , where, are the read error rate and the threshold of the read error rate respectively, is the error correction temperature rise coefficient; It should be noted that the physical positions of the host and NAND are close, and there is a linear relationship between their temperatures and the overall temperature of NAND; a high write load will cause frequent charge operations in NAND, increase power consumption, and raise the temperature gradient; a sudden increase in the error rate reflects charge leakage or oxide layer degradation, and local resistance changes cause additional heat generation; the external heat dissipation conditions directly affect the heat dissipation efficiency. For every 5°C increase in the ambient temperature, the NAND hot spot temperature will rise by 3 - 8°C; It should be noted that by analyzing the distribution of erase and write times through SMART data and combining the read and write speed to predict temperature data, the differences in usage intensity in different areas of the chip can be accurately located.

[0027] S33, process the temperature data of different areas of the NAND chip to obtain the final temperature Further, the temperature data of different areas of the NAND chip are processed to obtain the final temperature, including the following steps: S331. Calculate the final temperature. The specific formula is: ; in, is the final temperature, They are the temperature at the edge, center, and between layers of the NAND chip. are the weight coefficients of the temperature in each region, and their values are 0.2, 0.3, and 0.5 respectively.

[0028] It should be noted that the temperature of each area of the NAND chip is different, and the temperature of a single area cannot fully reflect the overall thermal condition. The specific formula combines the temperature of each area to accurately present the actual heating condition of the chip. Temperature is a key factor affecting the life of NAND chips. Accurate final temperature data can more accurately establish a correlation model with chip life, greatly improving the reliability of life prediction.

[0029] S4. Combining temperature, voltage, and write amplification factor, the remaining life of the solid state drive is corrected.

[0030] Furthermore, combining the temperature, voltage, and write amplification factor to correct the remaining life of the solid state drive includes the following steps: S41, calculate WAF, and ,in They are NAND write amount and host write amount respectively; S42. Construct a comprehensive life correction model, the specific formula is: ; in, is the remaining life after calculation, is the manufacturer's nominal write amplification, Test the ambient temperature for manufacturers. For abnormal power outage times and voltage exceeding ±10% of the nominal value, are the temperature coefficient, WAF coefficient, and voltage coefficient; S43, outputting the remaining life data.

[0031] It should be noted that in actual use, the actual lifespan of a hard disk may be exhausted prematurely due to factors such as environmental temperature, writing mode, and power supply stability. High-temperature environments can accelerate electron migration inside the chip, leading to problems such as threshold voltage drift and charge leakage in storage cells, shortening the programming lifespan. A writing mode that tends to concentrate on writing to a certain area will break the wear leveling mechanism, causing the number of erase / write cycles in a specific area to far exceed that of other areas and accelerating the failure of storage cells in that area. Unstable power supply may cause the writing process to be interrupted, resulting in data errors or damage to storage cells, and even causing the loss of firmware metadata. The combination of these factors may cause the hard disk to be exhausted prematurely before reaching its theoretical lifespan.

[0032] A system for monitoring the operating state of a solid-state drive includes the following modules: a data monitoring module, a data conversion module, a temperature prediction module, and a remaining lifespan prediction module. The data monitoring module, the data conversion module, the temperature prediction module, and the remaining lifespan prediction module are communicatively connected in sequence. The data monitoring module is used to monitor the core indicators of different solid-state drives, including health indicators, performance indicators, and environmental and hardware indicators. The data conversion module is used to convert the attributes of different solid-state drives into custom indicators. The temperature prediction module divides different regions of the NAND and combines the controller temperature with the writing speed, read error rate, and environmental temperature to predict the temperature of different regions of the NAND. The remaining lifespan prediction module combines temperature, voltage, and write amplification factor to correct the remaining lifespan of the solid-state drive.

[0033] A device for monitoring the operating state of a solid-state drive includes a memory, a processor, and computer instructions stored on the memory and running on the processor. When the computer instructions are run by the processor, the method of any one of the above is completed.

[0034] A storage medium for monitoring the operating state of a solid-state drive is used to store computer instructions. When the computer instructions are executed by the processor, the method of any one of the above is completed.

[0035] In summary, by establishing a field mapping table for solid-state drives of different models and uniformly converting SMART attributes of different manufacturers into custom metrics, the present invention can effectively break through the data interpretation dilemma caused by inconsistent metrics and large differences in manufacturer definitions. Since the units and calculation methods of SMART attributes of each manufacturer are different, for example, the remaining life is presented in specific durations for some and represented by fuzzy levels for others, and there are also various forms of read and write speed units such as KB / s and GB / s, it is difficult to directly understand cross-brand hard drive data during monitoring. Through unified conversion, all hard drive data is standardized to a consistent standard, eliminating differences in units and calculation logics, presenting data on the same scale, facilitating technicians to quickly conduct horizontal comparative analysis when facing a large number of hard drives of different brands and models, accurately locating devices with abnormal operation and performance degradation, and significantly improving the efficiency and accuracy of detecting the operating status of a large number of hard drives, providing a solid data foundation for centralized operation and maintenance management of hard drives. By dividing the NAND chip into edge, center, interlayer regions, obtaining the predicted temperature of different regions by combining the number of erase / write cycles with the write speed, and then obtaining the final temperature through weighted processing, the present invention can make up for the defects of traditional monitoring methods. Most tools can only read the temperature of the main controller, and the local high temperature of NAND flash memory is often difficult to be captured in time due to insufficient sensor coverage, which makes the potential overheating risk of the chip unable to be detected, thereby threatening the stability of the device and data security. By predicting the temperature of different regions, the areas where local high temperatures are likely to occur, such as the edge, center, and interlayer of the NAND chip, can be accurately obtained. Combining the final temperature obtained through weighted processing can more comprehensively and accurately reflect the actual thermal state of the NAND chip. By using the combination of voltage, write amplification factor, and predicted temperature to predict the remaining life of the solid-state drive, the present invention can significantly improve the accuracy of life prediction. By calculating the WAF, the relationship between the NAND write volume and the host write volume can be accurately measured, reflecting the consumption degree of the actual write on the flash memory. When constructing a comprehensive life correction model, factors such as temperature, WAF, abnormal power-off, and voltage fluctuation are incorporated, considering various key real-world situations that affect the life of the solid-state drive, and further outputting more reliable remaining life data, facilitating users to plan data storage and device replacement in advance.

[0036] The above are only the preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A method for monitoring the operating state of a solid-state drive, characterized in that, The method includes the following steps: S1. Monitor the core indicators during the operation of different solid-state drives, including health indicators, performance indicators, environmental and hardware indicators; S2. Establish a field mapping table for different models of solid-state drives, and uniformly convert the SMART attributes of different manufacturers into custom indicators; S3. Combine the main controller temperature, write speed, read error rate, and environmental temperature to predict the temperature values of different regions of NAND; S4. Combine the temperature, voltage, and write amplification factor to correct the remaining life of the solid-state drive.

2. The method for monitoring the operating state of a solid-state drive according to claim 1, characterized in that, The monitoring of the core indicators during the operation of different solid-state drives, including health indicators, performance indicators, environmental and hardware indicators, includes the following steps: S11. Monitor the health indicators, including the remaining life, total written data volume, number of bad blocks and spare blocks, and SSD wear leveling status; S12. Monitor the performance indicators, including read and write speeds, latency, interface error rate, and read and write error rates; S13. Monitor the environmental and hardware status, including the main controller temperature, environmental temperature, and power supply status. Among them, the power supply status includes the number of abnormal power outages and voltage data.

3. The method for monitoring the operating state of a solid-state drive according to claim 2, wherein The establishment of a field mapping table for different models of solid-state drives and the uniform conversion of the SMART attributes of different manufacturers into custom indicators includes the following steps: S21. Convert the remaining life data of each hard disk into a unified ratio of 0% to 100%; convert the total written volume into TB uniformly, convert the number of bad blocks into an integer, and convert the number of spare blocks into a percentage; convert the wear leveling into 0-10 points; S22. Convert the read and write speeds of each hard disk into MB / s, and unify the latency into milliseconds; convert the interface errors into the number of times; convert the read and write error rates into percentages; S23. Unify the temperature into degrees Celsius and count the number of power outages, and at the same time count the number of times the voltage exceeds ±10%.

4. The method for monitoring the operating state of a solid-state drive according to claim 1, characterized in that, The combination of the main controller temperature, write speed, read error rate, and environmental temperature to predict the temperature values of different regions of NAND includes the following steps: S31. Divide the NAND chip into edge, center, and interlayer regions, and analyze the distribution of erase / write times through SMART data; S32. Construct a thermodynamic model based on the main controller temperature, write speed, read error rate, and environmental temperature, and calculate the temperature values of different regions of the NAND chip. The specific formula is: ； Among them, is the calculated temperature value of the NAND hot spot area, is the ambient temperature, is the temperature rise between the main controller and NAND, and , where is the main controller temperature, is the thermal resistance coefficient reflecting the heat conduction efficiency from the main controller to NAND, is the temperature rise caused by writing, and , where is the writing speed, is the reference power consumption, is the thermal resistance coefficient reflecting the efficiency of power consumption conversion to temperature rise, is the additional temperature rise caused by the read error rate, and , where are the read error rate and the threshold of the read error rate respectively, is the error correction temperature rise coefficient; S33. Process the temperature data of different regions of the NAND chip to obtain the final temperature.

5. A method for monitoring the operating state of a solid-state drive according to claim 1, characterized in that, The processing of the temperature data of different regions of the NAND chip to obtain the final temperature includes the following steps: S331. Calculate the final temperature. The specific formula is: ； Among them, is the final temperature, are the temperatures at the edge, center, and between layers of the NAND chip respectively, are the weight coefficients of the temperatures in each region, and the values are 0.2, 0.3, and 0.5 respectively.

6. The method for monitoring the operating state of a solid-state drive according to claim 1, wherein The combination of the temperature, voltage, and write amplification factor to correct the remaining life of the solid-state drive includes the following steps: S41. Calculate the WAF, and , where are the NAND write amount and the host write amount respectively; S42. Construct a comprehensive life correction model. The specific formula is: ; wherein, is the calculated remaining life, is the write magnification nominalized by the manufacturer, is the temperature of the manufacturer's test environment, is the number of abnormal power outages and events where the voltage exceeds ±10% of the nominal value, are the temperature coefficient, WAF coefficient, and voltage coefficient; S43. Output the remaining life data.

7. A system for monitoring the operating state of a solid-state drive, characterized in that, It includes the following modules: data monitoring module, data conversion module, temperature prediction module, and remaining life prediction module. The data monitoring module, data conversion module, temperature prediction module, and remaining life prediction module are communicatively connected in sequence; The data monitoring module is used to monitor the core indicators of different solid-state drives, including health indicators, performance indicators, environmental and hardware indicators; The data conversion module is used to convert the attributes of different solid-state drives into custom metrics; The temperature prediction module divides different regions of the NAND and combines the controller temperature with the write speed, read error rate, and ambient temperature to predict the temperature of different regions of the NAND; The remaining life prediction module combines the temperature, voltage, and write amplification factor to correct the remaining life of the solid-state drive.

8. A device for monitoring the operating state of a solid-state drive, characterized in that, It includes a memory, a processor, and computer instructions stored on the memory and running on the processor. When the computer instructions are run by the processor, the method described in any one of claims 1-6 is completed.

9. A storage medium for monitoring the operating state of a solid-state drive, characterized in that, It is used to store computer instructions. When the computer instructions are executed by the processor, the method described in any one of claims 1-6 is completed.

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