Semiconductor process chamber

Abstract

The invention provides a semiconductor process chamber. The semiconductor process chamber comprises a chamber main body, a base, a fixed cover plate and a movable cover plate, wherein the base is arranged in the chamber main body and is used for bearing a wafer; the fixed cover plate is hermetically connected with the top opening of the chamber main body; the movable cover plate and the base are oppositely arranged, and the movable cover plate is arranged in the chamber main body in a lifting manner; the bottom surface of the movable cover plate is used for enclosing a reaction space with the inner wall of the chamber main body and the base; therefore, the height of the reaction space can be adjusted by controlling the movable cover plate to ascend and descend, so that the distribution condition of plasmas in the reaction space can be adjusted to adapt to different process requirements.

Description

Technical Field

[0001] The present invention belongs to the field of semiconductor processes, and particularly relates to a semiconductor process chamber. Background Art

[0002] The pre-clean process is an important step in the metal thin film manufacturing process, which usually uses plasma to remove impurities on the surface of the wafer or workpiece to be processed. Specifically, the pre-clean process usually uses plasma to etch-react with the surface material of the wafer to remove residues and oxide film layers on the surface and at the bottom of the trenches of the wafer, thereby ensuring the adhesion of the subsequently deposited metal thin film, reducing the contact resistance between film layers, and avoiding the degradation or even failure of the chip performance made from the wafer.

[0003] However, since the position of the radio frequency coil of the existing pre-clean chamber is usually not adjustable, and the adjustment range of the height of the pedestal is also very small, the adjustment range of the space height above the pedestal is very small, which makes it difficult to adjust the spatial distribution of the plasma above the pedestal, and further makes it difficult to adjust the topography etched on the wafer surface. Summary of the Invention

[0004] The present invention at least partially solves the problem that it is difficult to adjust the spatial distribution of plasma in the existing pre-clean process, and provides a semiconductor process chamber.

[0005] An embodiment of the present invention provides a semiconductor process chamber, which includes a chamber body, a pedestal, a fixed cover plate and a movable cover plate; wherein, the pedestal is arranged in the chamber body for carrying a wafer;

[0006] The fixed cover plate is hermetically connected to the top opening of the chamber body;

[0007] The movable cover plate is arranged opposite to the pedestal, and the movable cover plate is liftably arranged in the chamber body; the bottom surface of the movable cover plate is used to enclose a reaction space with the inner wall of the chamber body and the pedestal.

[0008] Optionally, the semiconductor process chamber further includes a driving component and a transmission rod; wherein,

[0009] One end of the transmission rod passes through the fixed cover plate and is connected to the movable cover plate, and the other end is connected to the power output end of the driving component; the driving component is used to drive the transmission rod to move in the vertical direction to drive the movable cover plate to lift.

[0010] Optionally, the semiconductor process chamber further includes a sealing assembly. The sealing assembly is sleeved outside the transmission rod. One end of the sealing assembly is connected to the fixed cover plate, and the other end is connected to the movable cover plate, and the connection position is close to the edge of the movable cover plate. The sealing assembly is used to isolate the driving assembly from the reaction space.

[0011] Optionally, the semiconductor process chamber further includes a first fixed tray. The first fixed tray is stacked above the movable cover plate and connected to the transmission rod. Along the axis of the movable cover plate, the projection of the first fixed tray can cover the projection of the movable cover plate. The other end of the sealing assembly is connected to the side of the first fixed tray facing away from the movable cover plate. Wherein, the sealing assembly, the first fixed tray and the transmission rod are an integral structure, and the movable cover plate is detachably connected to the first fixed tray.

[0012] Optionally, the sealing assembly includes a second fixed tray and a telescopic seal. The second fixed tray is arranged around the transmission rod, and the second fixed tray is hermetically connected to the bottom surface of the fixed cover plate.

[0013] Both ends of the telescopic seal are hermetically connected to the opposite surfaces of the first fixed tray and the second fixed tray respectively, and surround the transmission rod. The telescopic seal can be telescoped in the vertical direction.

[0014] Optionally, the driving assembly includes a driving slider, a driving motor and a guide rail. Wherein,

[0015] The guide rail extends in the vertical direction.

[0016] One end of the driving slider is fixedly connected to the transmission rod, and the other end is slidably connected to the guide rail.

[0017] The driving motor is used to drive the driving slider to slide along the guide rail.

[0018] Optionally, the semiconductor process chamber further includes a fixed bracket. The fixed bracket is arranged above the fixed cover plate. The fixed bracket has an accommodation space inside. The driving motor and the guide rail are arranged inside the fixed bracket.

[0019] An installation through hole is formed in the fixed cover plate. One side of the fixed bracket facing the fixed cover plate has an opening communicating with the installation through hole, and the fixed bracket is hermetically connected to the fixed cover plate.

[0020] The transmission rod extends into the chamber body through the installation through hole.

[0021] Optionally, the bottom surface of the movable cover plate has an uneven adsorption structure for adsorbing by-products generated during the semiconductor process.

[0022] Optionally, the bottom surface of the movable cover plate is one of a plane, a surface with a convex central region, and a surface with a convex edge region.

[0023] Optionally, the drive assembly further includes two position sensors, which are arranged at intervals along the extension direction of the guide rail. One of the two position sensors is used to determine the initial reference position of the movable cover plate, and the other is used to limit the maximum moving distance of the movable cover plate.

[0024] The present invention has the following beneficial effects:

[0025] The semiconductor process chamber provided by the embodiment of the present invention adds a liftable movable cover plate in the chamber body, so as to use the bottom surface of the movable cover plate and the inner wall of the chamber body and the base to jointly enclose a reaction space. Thus, while ensuring the overall seal of the chamber body, the height of the reaction space can be adjusted by lifting and lowering the bottom surface of the movable cover plate, and then the distribution of the plasma in the reaction space can be adjusted to regulate the etching uniformity and meet different process requirements. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 is a schematic structural diagram of a semiconductor process chamber in the related art;

[0027] Figure 2A is a schematic structural diagram of the semiconductor process chamber provided by the embodiment of the present invention in the state where the movable cover plate is raised;

[0028] Figure 2B is a schematic structural diagram of the semiconductor process chamber provided by the embodiment of the present invention in the state where the movable cover plate is lowered;

[0029] Figure 3A is a schematic structural diagram of the sealing assembly provided by the embodiment of the present invention in the compressed state;

[0030] Figure 3B is a schematic structural diagram of the sealing assembly provided by the embodiment of the present invention in the extended state;

[0031] Figure 4 is a schematic structural diagram of the drive assembly provided by the embodiment of the present invention;

[0032] Figure 5 is three etching morphology diagrams generated by using the semiconductor process chamber provided by the embodiment of the present invention for the etching process;

[0033] Figure 6Schematic diagram of a semiconductor process chamber when the bottom surface of the movable cover plate provided by the embodiment of the present invention is in the shape of a concave spherical crown surface;

[0034] Figure 7 Schematic diagram of a semiconductor process chamber when the bottom surface of the movable cover plate provided by the embodiment of the present invention is in the shape of a convex spherical crown surface;

[0035] Figure 8 Schematic diagram of a semiconductor process chamber when the bottom surface of the movable cover plate provided by the embodiment of the present invention is in the shape of a convex frustum of a cone

[0036] Figure 9 Schematic diagram of a semiconductor process chamber when the bottom surface of the movable cover plate provided by the embodiment of the present invention is in the shape of a convex cylindrical surface. Detailed implementation manners

[0037] To enable those skilled in the art to better understand the technical solution of the present invention, the present invention will be further described in detail below with reference to the accompanying drawings and specific implementation manners.

[0038] It can be understood that the specific embodiments and accompanying drawings described herein are only used to explain the present invention, rather than limiting the present invention.

[0039] It can be understood that, without conflict, the various embodiments of the present invention and the various features in the embodiments can be combined with each other.

[0040] It can be understood that for the convenience of description, only the parts related to the embodiments of the present invention are shown in the accompanying drawings of the present invention, and the parts unrelated to the embodiments of the present invention are not shown in the accompanying drawings.

[0041] It can be understood that, without conflict, the functions and steps marked in the flowcharts and block diagrams of the embodiments of the present invention may occur in an order different from that marked in the accompanying drawings.

[0042] It can be understood that the above implementation manners are only exemplary implementation manners adopted to illustrate the principle of the present invention, and the present invention is not limited thereto. For those of ordinary skill in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also regarded as the protection scope of the present invention.

[0043] Such as Figure 1As shown, the existing semiconductor process chamber generally includes a chamber body 01, a pedestal 02, a liner assembly, and a radio frequency coil 03. Among them, the radio frequency coil 03 surrounds the outer periphery of the chamber body 01, is used to be matched and connected with an external radio frequency source, and feeds radio frequency power into the interior of the chamber body 01 to excite process gas into plasma. Specifically, the radio frequency coil 03 is fixed at a designated position in the chamber through a coil support 06. Therefore, it is difficult to adjust the distribution of plasma inside the chamber body 01 by adjusting the position and distribution mode of the radio frequency coil 03, but only by driving the pedestal 02 to move up and down to change the spatial distribution of plasma. A fixed cover plate 07 is also provided at the top of the chamber body 01.

[0044] The liner assembly includes an outer liner ring 04 and an inner liner ring 05. Among them, the outer liner ring 04 is arranged around the driving device below the pedestal 02, and the outer liner has an outer edge extending upward. The inner liner ring 05 is arranged above the outer liner, and the inner liner ring 05 extends to a position corresponding to the outer edge of the outer liner. There is a slit between the outer surface of the inner liner ring 05 and the inner peripheral surface of the outer edge of the outer liner, which is used to filter the plasma in the airflow to prevent plasma from leaking into the lower cavity. In order to ensure that the length of the above slit is sufficient to prevent plasma from passing through, the pedestal 02 cannot be lowered to too low a position. Moreover, since the inner liner ring 05 also has a flange for connecting the side wall of the chamber body 01 on its circumferential surface, in order to avoid interference between the outer liner ring 04 and the inner liner ring 05, the pedestal 02 cannot be raised to too high a position either. It can be seen that the lifting range of the pedestal 02 is limited. Therefore, the adjustment of the lifting of the pedestal 02 to the spatial distribution of plasma is also limited. Furthermore, the adjustment range of the process uniformity of the existing semiconductor process chamber is small, resulting in difficulty in adjusting the surface topography of the etched wafer.

[0045] To solve the above technical problems, this embodiment provides a semiconductor process chamber, as Figure 2A and 2B shown, which includes a chamber body 1, a pedestal 2, a fixed cover plate 3, and a movable cover plate 4.

[0046] Among them, the pedestal 2 is arranged inside the chamber body 1 and is used to carry the wafer. The fixed cover plate 3 is hermetically connected to the top opening of the chamber body 1 to ensure the overall sealing of the chamber body 1. The movable cover plate 4 is arranged opposite to the pedestal. The bottom surface of the movable cover plate 4 is used to jointly enclose a reaction space with the inner wall of the chamber body 1 and the pedestal 2, that is, the reaction space is located above the pedestal 2, so that the plasma moves towards the wafer surface under the drive of bias voltage or its own gravity and undergoes an etching reaction with the material on the wafer surface. Correspondingly, a bias electrode for loading radio frequency bias voltage can be arranged inside the pedestal 2, or the pedestal 2 may not have the function of loading radio frequency bias voltage.

[0047] As Figure 2A and 2BAs shown, the movable cover plate 4 is disposed in the chamber body 1 in a liftable manner. Correspondingly, the bottom surface of the movable cover plate 4 can also be lifted to adjust the height of the reaction space, so as to improve the distribution of the plasma in the reaction space by adjusting the volume of the plasma, and can adjust the plasma density. Furthermore, the uniformity and process rate of the etching reaction can be adjusted according to the actual process requirements, so that the pre-cleaning process can achieve the actual expected effect. Moreover, since the movable cover plate 4 is disposed opposite to the base 2, that is, away from the base 2, generally, there will not be too many other components in the area where the movable cover plate 4 is located. Therefore, interference of other components with the lifting movement of the movable cover plate 4 can be avoided, thereby improving the adjustment ability of the spatial distribution of the plasma to meet different requirements for process uniformity.

[0048] Moreover, in actual manufacturing, only by modifying the upper cover structure of the existing semiconductor process chamber can the semiconductor process chamber proposed in this embodiment be obtained, without modifying components such as the chamber body 1 and the base 2, which can greatly reduce the equipment modification cost.

[0049] The inventors conducted multiple experiments based on the above semiconductor process chamber structure. Specifically, multiple etching processes were carried out at various different reaction space heights, and the different etching morphologies as shown in Figure 5 were obtained. Specifically, as shown in Figure 5 , as the distance between the bottom surface of the movable cover plate 4 and the fixed cover plate 3 increases, the width of the high etching amount region at the wafer edge decreases, that is, the edge etching amount becomes smaller. It can be seen that adjusting the height of the reaction space by using the movable cover plate 4 proposed in this embodiment can also adjust the etching amount ratio of the inner ring and the outer ring on the wafer surface. Therefore, by adjusting the height of the bottom surface of the movable cover plate 4, selective etching of the wafer surface area can also be achieved to meet different etching requirements.

[0050] It should be noted that there is a certain gap between the edge of the movable cover plate 4 and the side wall of the chamber body 1, rather than a sealed fit, to avoid severe friction between the movable cover plate 4 and the side wall of the chamber body 1 during the lifting process, thereby ensuring the normal lifting movement of the movable cover plate 4 and preventing debris generated by the friction between the movable cover plate 4 and the chamber body 1 from contaminating the process environment. Moreover, the width of the gap between the edge of the movable cover plate 4 and the side wall of the chamber body 1 can be designed in combination with the manufacturing cost, process accuracy requirements, and manufacturing process accuracy.

[0051] In some embodiments, as shown in Figure 2A and 2BAs shown, the semiconductor process chamber further includes a driving component 5 and a transmission rod 6. One end of the transmission rod 6 passes through the fixed cover plate 3 and is connected to the movable cover plate 4, and the other end is connected to the power output end of the driving component 5; the driving component 5 is used to drive the transmission rod 6 to move in the vertical direction, so as to drive the lifting relative to the chamber body 1, thereby adjusting the height of the reaction space.

[0052] In some embodiments, as Figure 2A and 2B shown, the semiconductor process chamber further includes a sealing component 7; the sealing component 7 is sleeved outside the transmission rod 6; one end of the sealing component 7 is connected to the fixed cover plate 3; the other end of the sealing component 7 is connected to the movable cover plate 4, and the connection part is located in the edge area of the movable cover plate 4; the sealing component 7 is used to isolate the driving component 5 from the reaction space, thereby preventing the driving component 5 from being corroded and damaged by process gases and plasmas generated by process gases, and can prevent the process environment from being polluted, and further avoid affecting the process effect.

[0053] As Figure 2B shown, by making the connection part of the sealing component 7 and the movable cover plate 4 close to the edge of the movable cover plate 4, the annular space formed between the outer periphery of the sealing component 7 and the side wall of the chamber body 1 can be made as small as possible. Specifically, during the process of the movable cover plate 4 descending, the gas inside the reaction space will flow into the above-mentioned annular space through the gap between the edge of the movable cover plate 4 and the side wall of the chamber body 1; and by making this annular space as small as possible, the amount of gas flowing into this annular space can be made as small as possible, so that the gas flow field inside the reaction space will only be slightly disturbed negligibly, or even not be disturbed, and further the process effect can be avoided from being affected.

[0054] In some embodiments, the semiconductor process chamber further includes a first fixed tray 8, the first fixed tray 8 is stacked above the movable cover plate and connected to the transmission rod 6; along the axis of the movable cover plate 4, the projection of the first fixed tray 8 can cover the projection of the movable cover plate 4, so as to isolate the top surface of the movable cover plate 4 from the reaction space, thereby preventing the movable cover plate 4 from being corroded by process gases, and the force on each part of the movable cover plate 4 can be made uniform, so that the movable cover plate 4 can be driven to lift smoothly. The other end of the sealing component 7 is connected to the side of the first fixed tray 8 facing away from the movable cover plate 4. Among them, the sealing component 7, the first fixed tray 8 and the transmission rod 6 are an integral structure, and the movable cover plate 4 is detachably connected to the first fixed tray 8; in this way, during the assembly stage of the semiconductor process chamber, the sealing component 7, the first fixed tray 8 and the transmission rod 6 can be integrally installed, and during the disassembly stage, the three can also be integrally removed, and the movable cover plate 4 is detachably connected to the first fixed tray 8, and only the movable cover plate 4 can be disassembled for cleaning or replacement.

[0055] In some embodiments, asFigure 3A and 3B As shown in 3B , the sealing assembly 7 includes a second fixed tray 71 and a telescopic seal 72. Among them, the second fixed tray 71 is arranged around the driving rod 6 to avoid the driving assembly 5; moreover, the second fixed tray 71 is hermetically connected to the bottom surface of the fixed cover plate 3. The two ends of the telescopic seal 72 are respectively hermetically connected to the opposite surfaces of the second fixed tray 71 and the first fixed tray 433, and surround the driving assembly 5 to seal the outer periphery of the driving assembly 5; the telescopic seal 72 can be telescoped in the vertical direction to achieve dynamic sealing of the driving assembly 5 during the process of the driving assembly 5 driving the movable cover plate 4 to lift and lower, so as to prevent the process gas from corroding the driving assembly 5, and prevent the debris generated by the mechanical friction of the driving assembly 5 and the external environmental gas from entering the interior of the chamber body 1, resulting in the pollution of the process environment.

[0056] Exemplarily, the above-mentioned telescopic seal 72 can adopt a bellows.

[0057] In some embodiments, as Figure 4 shown in Figure 4 , the driving assembly 5 includes a driving slider 51, a driving motor 52 and a guide rail 53; among them, the guide rail 53 extends in the vertical direction. One end of the driving slider 51 is fixedly connected to the driving rod 6, and the other end is slidably connected to the guide rail 53 to drive the driving rod 6 to move in the vertical direction; the driving motor 52 is used to drive the driving slider 51 to slide along the guide rail 53, so as to drive the movable cover plate 4 to move in the vertical direction, reducing the interference of the internal gas flow field in the reaction space during the lifting and lowering process of the movable cover plate 4; moreover, the sliding lifting of the driving rod 6 can realize continuous adjustment of the height of the reaction space, so as to improve the accuracy of adjusting the height of the reaction space, and further expand the adaptation range to different process requirements.

[0058] In some embodiments, as Figure 2A and 2B shown in Figure 2A and 2B , the semiconductor process chamber further includes a fixed bracket 9. The fixed bracket 9 is arranged above the fixed cover plate 3. The fixed bracket 9 provides an installation basis for the driving assembly 5. For example, the driving assembly 5 can be arranged above the fixed bracket 9. To further ensure the sealing performance of the chamber body 1 and avoid process pollution, the fixed bracket 9 includes a body with openings at both ends and a support plate. The support plate is used to block one opening, and the end of the body facing away from the support plate is hermetically connected to the fixed cover plate 3. The support plate has an avoidance hole, and the driving assembly is arranged on the side of the support plate facing away from the body. An installation through hole is opened on the fixed cover plate 3. One end of the driving rod extends into the chamber body 1 through the installation through hole to be connected to the movable cover plate 4, and the other end passes through the avoidance hole to be connected to the driving assembly 5.

[0059] Optionally, the driving assembly 5 includes a housing, and the housing is hermetically connected to the avoidance hole of the fixed bracket, and the driving assembly is arranged inside the housing.

[0060] Specifically, the length of the guide rail 53 depends on the lifting distance of the movable cover plate 4. Correspondingly, the guide rail 53 can be entirely arranged inside the housing, or partially extend to the fixed bracket 9 or the chamber body 1.

[0061] The driving motor 52 is fixedly connected to the housing, and the power output end of the driving motor 52 is arranged inside the housing 9.

[0062] In some embodiments, the bottom surface of the movable cover plate 4 has an uneven adsorption structure, which is used to adsorb by-products generated during the semiconductor process to promote the reaction.

[0063] Exemplarily, the above-mentioned uneven structure is formed, for example, by sandblasting or thermal spraying the bottom surface of the movable cover plate 4.

[0064] Exemplarily, the movable cover plate 4 is, for example, a quartz plate, a ceramic material plate or an aluminum plate, so that the movable cover plate 4 has the ability to resist corrosion and does not participate in the process reaction.

[0065] In some embodiments, the bottom surface shape of the movable cover plate 4 is one of a flat surface, a surface with a convex central region, and a surface with a convex edge region. By designing the bottom surface of the movable cover plate 4 into different shapes, the reaction space can have different shapes and heights, and the shape of the reaction space also affects the spatial gradient of the plasma, that is, affects the distribution of the plasma, and further affects the process result. Specifically, as Figure 2A and Figures 6 - 9 shown, the bottom surface shape of the movable cover plate 4 is, for example, a flat surface, a concave spherical crown surface, a convex spherical crown surface, a convex frustum surface or a convex cylindrical surface, and can also be a concave cylindrical surface or a concave frustum surface, etc.

[0066] In the actual process development, the shape of the suitable movable cover plate 4 can be determined by pre-experiment. Specifically, through multiple experiments, the inventor found that when the bottom surface of the movable cover plate 4 is a flat surface, the etching amount in the central region of the wafer is higher than that in the edge region. It can be seen that the movable cover plate 4 with a flat bottom surface is more suitable for the process requirements with a higher central etching amount; as Figure 7 and Figure 8 shown, when the bottom surface of the movable cover plate 4 is a convex spherical crown surface and a convex frustum surface, the etching amount in the central region of the wafer is consistent with that in the edge region. It can be seen that the movable cover plate 4 with a convex spherical crown surface or a convex frustum surface is more suitable for the process requirements with a uniform etching amount on the entire surface; as Figure 6 shown, when the bottom surface of the movable cover plate 4 is a concave spherical crown surface, the etching amount in the central region of the wafer is less than that in the edge region. It can be seen that the movable cover plate 4 with a concave spherical crown surface is more suitable for the process requirements with a higher edge etching amount.

[0067] It should be noted that in the actual process, the design parameters such as the material, thickness, diameter, arc curvature, chamfer curvature, etc. of the movable cover plate 4 can be designed according to the actual process requirements.

[0068] In some embodiments, the drive assembly 5 further includes two position sensors 54. Among them, the two position sensors 54 are arranged at intervals along the extension direction of the guide rail 53. One of the two position sensors 54 is used to determine the initial reference position of the movable cover plate 4. Specifically, it can be arranged at a position corresponding to the initial reference position of the movable cover plate 4; the other is used to limit the maximum moving distance of the movable cover plate 4. Specifically, it can be correspondingly arranged at the position of the movable cover plate 4 that is farthest from the initial position.

[0069] Exemplarily, as Figure 4 shown, the above-mentioned position sensor 54 is, for example, a through-beam sensor. Specifically, the through-beam sensor can be arranged facing the outer peripheral surface of the transmission rod, and a baffle is arranged on the slider 51; in this way, when the detected light is blocked by the baffle, it means that the rotating rod has reached the position corresponding to the photoelectric sensor, such as reaching the above-mentioned initial reference position or the above-mentioned maximum moving distance position.

[0070] Furthermore, the drive assembly 5 further includes a controller. The controller is used to control the power output by the drive motor 52 to control the lifting speed and lifting stroke of the movable cover plate 4, so as to realize the automatic control of process uniformity and the surface topography of the wafer. Specifically, the controller can start counting the rotation speed and number of turns of the drive motor 52 when the position sensor 54 detects the initial reference position of the movable cover plate 4, and calculate the stroke of the drive motor 52 according to the rotation speed and number of turns of the drive motor 52, and then can deduce the rising distance or falling distance of the movable cover plate 4.

[0071] It can be understood that the above embodiments are merely exemplary embodiments adopted to illustrate the principle of the present invention, but the present invention is not limited thereto. For those of ordinary skill in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also regarded as the protection scope of the present invention.

Claims

1. A semiconductor process chamber, characterized in that, It includes a chamber body, a base, a fixed cover plate and a movable cover plate; wherein the base is arranged in the chamber body and is used to carry the wafer; The fixed cover plate is sealed and connected to the top opening of the chamber body; The movable cover is arranged opposite to the base, and the movable cover can be lifted and lowered in the chamber body; the bottom surface of the movable cover is used to enclose a reaction space with the inner wall of the chamber body and the base.

2. The semiconductor process chamber according to claim 1, wherein The semiconductor process chamber further includes a driving assembly and a transmission rod; wherein, One end of the transmission rod passes through the fixed cover plate and is connected to the movable cover plate, and the other end is connected to the power output end of the driving assembly; the driving assembly is used to drive the transmission rod to move in the vertical direction to drive the movable cover plate to rise and fall.

3. The semiconductor process chamber according to claim 2, wherein, The semiconductor process chamber also includes a sealing component, which is sleeved on the outside of the transmission rod, one end of the sealing component is connected to the fixed cover plate, and the other end is connected to the movable cover plate, and the connection position is close to the edge of the movable cover plate; the sealing component is used to isolate the driving component from the reaction space.

4. The semiconductor process chamber according to claim 3, wherein The semiconductor process chamber also includes a first fixed tray, which is stacked above the movable cover and connected to the transmission rod; along the axis of the movable cover, the projection of the first fixed tray can cover the projection of the movable cover, and the other end of the sealing assembly is connected to the side of the first fixed tray away from the movable cover, wherein the sealing assembly, the first fixed tray and the transmission rod are an integrated structure, and the movable cover is detachably connected to the first fixed tray.

5. The semiconductor process chamber according to claim 4, wherein, The sealing assembly includes a second fixed tray and a retractable sealing member; the second fixed tray is arranged around the transmission rod, and the second fixed tray is sealedly connected to the bottom surface of the fixed cover plate; Both ends of the retractable seal are respectively sealed and connected to the surfaces opposite to the first fixed tray and the second fixed tray, and surround the transmission rod; the retractable seal can be retracted in the vertical direction.

6. The semiconductor process chamber according to claim 2, wherein, The driving assembly includes a driving slider, a driving motor and a guide rail; wherein, The guide rail extends in a vertical direction; One end of the driving slider is fixedly connected to the transmission rod, and the other end is slidably connected to the guide rail; The driving motor is used to drive the driving slider to slide along the guide rail.

7. The semiconductor process chamber according to claim 6, wherein It also includes a fixing bracket; the fixing bracket is arranged above the fixing cover plate; the fixing bracket has a receiving space inside; the driving motor and the guide rail are arranged inside the fixing bracket; The fixed cover plate is provided with a mounting through hole; the side of the fixed bracket facing the fixed cover plate has an opening communicating with the mounting through hole, and the fixed bracket is sealed and connected to the fixed cover plate; The transmission rod extends into the interior of the chamber body through the mounting through hole.

8. The semiconductor process chamber according to claim 1, wherein, The bottom surface of the movable cover plate is provided with an uneven adsorption structure, and the adsorption structure is used for adsorbing by-products generated in the semiconductor process.

9. The semiconductor process chamber according to claim 1, wherein The bottom surface of the movable cover plate is in the shape of one of a plane, a surface protruding in the center area, and a surface protruding in the edge area.

10. The semiconductor process chamber according to claim 6, wherein, The driving component further includes two position sensors, the two position sensors are arranged at intervals along the extending direction of the guide rail, one of the two position sensors is used to determine the initial reference position of the movable cover plate, and the other is used to limit the maximum moving distance of the movable cover plate.

Images