Two-phase flow vacuum sealing structure and preparation method and application thereof

Abstract

The invention discloses a two-phase flow vacuum sealing structure, a preparation method and application in the field of two-phase flow heat dissipation and high airtight packaging, and the two-phase flow vacuum sealing structure comprises two base material layers and a sealing structure layer arranged at the peripheral edge part between the base material layers, a capillary structure layer is arranged in the center of the sealing structure layer and located between the two base material layers, and a blocking layer is arranged between the capillary structure layer and the sealing structure layer. By providing two sealing structure selections of an edge sealing adhesive type and a weldable base material type, a proper sealing mode can be flexibly selected according to different application scenes and material characteristics, and the process adaptability is remarkably improved. An effective sealing solution can be provided for production scenes needing rapid curing and convenient operation and products sensitive to sealants and requiring no-sealant sealing.

Description

Technical Field

[0001] The present invention relates to the field of two-phase flow heat dissipation and high gas tight packaging, and specifically to a two-phase flow vacuum sealing structure, a preparation method and an application thereof. Background Art

[0002] With the trend of modern electronic devices towards being thinner, lighter and more high-performance, the requirements for heat dissipation and sealing technologies are becoming increasingly stringent. In traditional two-phase flow heat dissipation modules, metal materials are often used and the sealed cavity is realized by welding. However, with the rise of flexible electronics and non-metal heat dissipation structures, this traditional method faces many challenges. In the scenario of flexible electronics or non-metal heat dissipation structures, welding is difficult to implement because the high temperature during the welding process may damage the structure and performance of flexible or non-metal materials.

[0003] When the application scenario puts forward strict requirements for long-term airtightness and low water vapor transmission rate (WVTR) of the product, common plastic substrates (such as PET, PC, etc.) cannot meet the use requirements of the vacuum heat dissipation cavity only by themselves due to their weak barrier performance. To solve this problem, although multi-layer protection and sealing structures can be supplemented, there is still a lack of a comprehensive solution in the prior art that can simultaneously take into account structural adjustability, high barrier, low outgassing and high capillary reflux efficiency. This results in the performance, stability and service life of the product being limited in actual applications and unable to meet the market demand for high-quality electronic devices.

[0004] Therefore, those skilled in the art have provided a two-phase flow vacuum sealing structure to solve the problems raised in the above background art. Summary of the Invention

[0005] The purpose of the present invention is to provide a two-phase flow vacuum sealing structure to solve the problems raised in the above background art.

[0006] To achieve the above purpose, the present invention provides the following technical solutions:

[0007] The two-phase flow vacuum sealing structure includes two substrate layers and a sealing structure layer arranged at the outer peripheral edge of the substrate layers. A capillary structure layer is arranged at the central part of the sealing structure layer between the two substrate layers, and a barrier layer is arranged between the capillary structure layer and the sealing structure layer;

[0008] The substrate layer is made of plastic material or glass material, and the thickness is 0.06 - 0.1 mm;

[0009] The sealing structure layer is divided into two categories: the first category (Type1) is the edge-sealing glue type, and the second category (Type2) is the weldable substrate type;

[0010] The barrier layer is an Al2O3 / SiO2 multi-layer structure deposited by ALD process or PECVD process, with a single layer thickness of 10 - 30 nm and a total of 5 layers. Through this Al2O3 / SiO2 multi-layer structure, the water vapor transmission rate (WVTR) can reach 10 -6 g / m 2 / day;

[0011] The capillary structure layer is composed of Nylon, LCP, Polyester or metal fibers, and has a double-density structure, with a low density on one side and a high density on the other side, or a structure with a high density gradually changing to a low density.

[0012] Further, in the sealing structure layer, the edge-sealing adhesive type is suitable for plastic materials and glass materials, and the edge-sealing adhesive type uses UV adhesive or thermosetting adhesive, with a water vapor transmission rate (WVTR) < 0.1 g / m 2 / day, having low outgassing and low permeation characteristics; the weldable substrate type is suitable for plastic materials, and the sealing structure layer selects the same plastic material as the substrate layer, and is sealed by ultrasonic welding.

[0013] Further, the edge-sealing adhesive type uses UV adhesive or thermosetting adhesive, among which, the curing conditions of the thermosetting adhesive are a temperature of 80 - 120 °C and a curing time of 10 - 40 minutes.

[0014] Further, in the preparation process of the barrier layer, if the PECVD process is used, the process parameters are a temperature of 120 ± 5 °C, a pressure of 0.5 Torr, and a deposition rate of 10 nm / min.

[0015] Further, the double-density structure of the capillary structure layer is made by weaving or sintering process. Based on the capillary phenomenon, the liquid is retained in the high-density area, and the low-density area is the steam flow space, and it satisfies CVCM (Collected Volatile Condensable Materials) ≤ 0.1%, TML (Total Mass Loss) < 1%.

[0016] Further, the plastic material is selected from one or more of PC, PET, PI, acrylic, PP, and PE.

[0017] The manufacturing method of the two-phase flow vacuum sealing structure includes the following steps:

[0018] S1. Prepare the substrate layer, select the appropriate plastic material or glass material according to the design requirements, and process it to a thickness of 0.06 - 0.1 mm;

[0019] S2. For the sealing structure layer, if it is of the edge-sealing adhesive type, apply UV adhesive or thermosetting adhesive on the corresponding substrate, and cure the thermosetting adhesive according to the set curing conditions; if it is of the weldable substrate type, connect the same plastic as the substrate layer to the substrate layer through ultrasonic welding process.

[0020] S3. Use ALD process or PECVD process to prepare a barrier layer on the inner or outer surface of the substrate layer, and control the single-layer thickness of the Al2O3 / SiO2 multi-layer structure to be 10 - 30 nm and the total number of layers to be 5 layers.

[0021] S4. Through weaving or sintering process, use Nylon, LCP, Polyester or metal fiber to prepare a double-density capillary structure layer of the capillary structure layer, and then install the capillary structure layer at a suitable position inside the sealing structure.

[0022] Further, when preparing the barrier layer in step S3, if using PECVD process, it is necessary to control the temperature to be 120 ± 5 °C, the pressure to be 0.5 Torr, and the deposition rate to be 10 nm / min (taking SiO2 as an example).

[0023] Further, when curing the UV adhesive or thermosetting adhesive of the edge-sealing adhesive type in step S2, the curing conditions are temperature 80 - 120 °C and curing time 10 - 40 minutes.

[0024] An application of a two-phase flow vacuum sealing structure, which is applied to one or more of mobile terminals, wearable devices, and thermal management and packaging systems of high-density electronic products.

[0025] Compared with the prior art, the beneficial effects of the present invention are:

[0026] 1. The present invention adopts a compatibility design of multiple sealing methods to improve process adaptability;

[0027] 2. The present invention adopts a multi-layer barrier + nano-deposition structure to achieve extremely low WVTR and OTR;

[0028] 3. The capillary structure in the present invention supports efficient two-phase flow liquid reflux and heat dissipation cycle;

[0029] 4. The packaging of the present invention has the advantages of flexibility, high airtightness, and low cost, and is suitable for different terminal structure applications. Brief Description of the Drawings

[0030] Figure 1 It is a schematic structural diagram of the present invention.

[0031] In the figure: 1. Substrate layer; 2. Sealing structure layer; 3. Barrier layer; 4. Capillary structure layer. Detailed Embodiments

[0032] Please refer toFigure 1 A two-phase flow vacuum sealing structure, including two substrate layers 1 and a sealing structure layer 2 provided at the outer peripheral edge of the substrate layer 1. A capillary structure layer 4 is provided at the central part of the sealing structure layer 2 between the two substrate layers 1, and a barrier layer 3 is provided between the capillary structure layer 4 and the sealing structure layer 2;

[0033] The substrate layer 1 is made of plastic material or glass material, with a thickness of 0.06 - 0.1 mm (preferably 0.08 mm);

[0034] The sealing structure layer 2 is divided into two types: the first type (Type1) is the edge-sealing glue type, and the second type (Type2) is the weldable substrate type;

[0035] The barrier layer 3 is an Al2O3 / SiO2 multi-layer structure deposited by ALD process or PECVD process, with a single-layer thickness of 10 - 30 nm and a total of 5 layers. Through this Al2O3 / SiO2 multi-layer structure, the water vapor transmission rate WVTR can reach 10 -6 g / m 2 / day;

[0036] The capillary structure layer 4 is composed of Nylon, LCP, Polyester or metal fibers, and has a double-density structure, with a low density on one side and a high density on the other side, or a structure with a high density gradually decreasing to a low density.

[0037] In the sealing structure layer 2, the edge-sealing glue type is applicable to plastic materials and glass materials. The edge-sealing glue type uses UV glue or thermosetting glue, and the water vapor transmission rate WVTR < 0.1 g / m 2 / day, with low outgassing and low permeation characteristics; the weldable substrate type is applicable to plastic materials. The sealing structure layer 2 is made of the same plastic material as the substrate layer 1, and the sealing is achieved by ultrasonic welding.

[0038] Among them, the edge-sealing glue type uses UV glue or thermosetting glue. Among them, the curing conditions of the thermosetting glue are a temperature of 80 - 120 °C and a curing time of 10 - 40 minutes. Taking 3M DP125 glue as an example, the curing conditions are a temperature of 80 °C and a curing time of 40 minutes.

[0039] Among them, in the preparation process of the barrier layer 3, if the PECVD process (taking SiO2 as an example) is adopted, the process parameters are a temperature of 120 ± 5 °C, a pressure of 0.5 Torr, and a deposition rate of 10 nm / min.

[0040] The PECVD process is a technology for chemical vapor deposition assisted by plasma at a relatively low temperature. It uses a radio frequency (RF) or microwave power supply to generate plasma, ionize the reaction gas to form active groups, and these active groups undergo chemical reactions on the substrate surface and deposit into a thin film.

[0041] Specific parameters:

[0042] Temperature: 120 ± 5 °C;

[0043] Pressure: 0.5 Torr (about 66.7 Pa);

[0044] Deposition rate: 10 nm / min (taking SiO2 as an example);

[0045] Reaction gases: Usually silane (SiH4) and oxygen (O2) or nitrogen (N2), etc.;

[0046] Power supply frequency: Usually a radio frequency power supply of 13.56 MHz.

[0047] Process flow:

[0048] Place the substrate into the vacuum reaction chamber;

[0049] Vacuum to the base pressure;

[0050] Introduce the reaction gases and adjust to the working pressure (0.5 Torr);

[0051] Apply radio frequency power to generate plasma;

[0052] Control the deposition time to obtain the desired film thickness;

[0053] After deposition, turn off the power and gases, and take out the sample.

[0054] Advantages:

[0055] Low-temperature process (120 °C), suitable for heat-sensitive substrates;

[0056] Fast deposition rate (10 nm / min);

[0057] The deposited film has high density and strong adhesion;

[0058] It can prepare various dielectric films such as SiO2, SiNx, etc.

[0059] Among them, the double-density structure of the capillary structure layer 4 is made by weaving or sintering process, and based on the capillary phenomenon, the liquid is retained in the high-density area, and the low-density area is the steam flow space, and it satisfies CVCM (Collected Volatile Condensable Materials) ≤ 0.1%, TML (Total Mass Loss) < 1%.

[0060] Among them, the plastic material is selected from one or more of PC, PET, PI, acrylic, PP, and PE.

[0061] The manufacturing method of the two-phase flow vacuum sealing structure includes the following steps:

[0062] S1. Prepare the substrate layer 1, select a suitable plastic material or glass material according to the design requirements, and process it to a thickness of 0.06 - 0.1 mm;

[0063] S2. For the sealing structure layer 2, if it is a sealing edge glue type, coat UV glue or thermosetting glue on the corresponding substrate, and cure the thermosetting glue according to the set curing conditions; if it is a weldable substrate type, connect the same plastic as the substrate layer 1 to the substrate layer 1 through an ultrasonic welding process;

[0064] S3. Use the ALD process or PECVD process to prepare the barrier layer 3 on the inner surface or outer surface of the substrate layer, and control the single layer thickness of the Al2O3 / SiO2 multi-layer structure to be 10 - 30 nm and the total number of layers to be 5 layers;

[0065] S4. Through a weaving or sintering process, use Nylon, LCP, Polyester or metal fibers to prepare the double-density capillary structure layer of the capillary structure layer 4, and then install the capillary structure layer 4 at a suitable position inside the sealing structure.

[0066] The ALD process (Atomic Layer Deposition) is a thin film deposition technology based on self-limiting surface reactions. By alternately introducing different precursor gases, self-limiting chemical reactions occur on the substrate surface, and the thin film grows layer by layer.

[0067] Specific parameters:

[0068] Deposited material: Al2O3 / SiO2 multi-layer structure;

[0069] Single layer thickness: 10 - 30 nm;

[0070] Total number of layers: 5 layers;

[0071] Temperature: Usually 150 - 300 °C (not clearly defined in the patent, but generally lower than the PECVD temperature).

[0072] Process flow:

[0073] Put the substrate into the reaction chamber and heat it;

[0074] Introduce the first precursor (such as trimethylaluminum TMA) to form a monolayer adsorption on the surface;

[0075] Purge the excess precursor with an inert gas (such as N2);

[0076] Introduce the second precursor (such as H2O or O3) to react with the adsorption layer to form an oxide;

[0077] Purge with an inert gas again;

[0078] Repeat the cycle until the required thickness is reached.

[0079] Preparation of Al2O3 / SiO2 Multilayer Structure:

[0080] First deposit the Al2O3 layer (using TMA and H2O / O3);

[0081] Then deposit the SiO2 layer (using silane precursor and oxygen);

[0082] Deposit 5 layers alternately with a total thickness of 50 - 150 nm.

[0083] Advantages:

[0084] Atomic - level thickness control with good uniformity;

[0085] Excellent step coverage ability, suitable for complex structures;

[0086] The film is dense with few defects;

[0087] It can achieve an extremely low WVTR (10 -6 g / m 2 / day).

[0088] Among them, when preparing the barrier layer 3 in step S3, if using the PECVD process, taking SiO2 as an example, the temperature needs to be controlled at 120 ± 5 °C, the pressure at 0.5 Torr, and the deposition rate at 10 nm / min.

[0089] Among them, when curing the UV - type or thermosetting edge - sealing glue in step S2, taking 3M DP125 glue as an example, the curing conditions are a temperature of 80 °C and a curing time of 40 minutes.

[0090] An application of a two - phase flow vacuum - sealing structure, which is applied to one or more of the thermal management and encapsulation systems of mobile terminals, wearable devices, and high - density electronic products.

[0091] Example 1

[0092] Application in foldable screen mobile phones: PET is selected as the substrate layer 1. Utilizing its good flexibility and optical properties, it meets the requirements of foldable screen mobile phones for the substrate. The sealing structure layer adopts a weldable substrate type, and the same PET material is sealed by ultrasonic welding to ensure the reliability of the seal during the folding process. The barrier layer 3 is prepared by depositing an Al2O3 / SiO2 multi-layer structure using the ALD process, with a single-layer thickness of 10 - 30 nm and a total of 5 layers, effectively blocking the influence of external water vapor and oxygen on the internal heat dissipation structure. The capillary structure layer 4 is selected as a double-density capillary structure composed of Nylon fibers, which is made by a weaving process and installed inside the heat dissipation cavity to achieve an efficient two-phase flow heat dissipation cycle. After 100,000 folding tests, the WVTR retention rate > 95%. In the environmental test at -20 to 80 °C, the WVTR retention rate > 95%, and there is no delamination phenomenon when the bending radius is 3 mm, proving the stability and reliability of this sealing structure in the application of foldable screen mobile phones.

[0093] Example 2

[0094] Application in flexible sensors: For flexible sensors, PI is selected as the substrate layer 1 because of its high heat resistance and chemical stability, which can adapt to the working requirements of sensors in complex environments. The sealing structure layer adopts an edge-sealing adhesive type, and UV glue is used for sealing. For example, a UV glue that meets the WVTR < 0.1 g / m 2 / day standard is selected to form a stable sealing layer under UV curing. The barrier layer 3 adopts the PECVD process to form a nanostructured barrier layer under the conditions of 120 ± 5 °C, a pressure of 0.5 Torr, and a deposition rate of 10 nm / min (taking SiO2 as an example). The capillary structure layer 4 adopts a double-density capillary structure composed of metal fibers, which is made by a sintering process, providing an efficient liquid return channel for two-phase flow heat dissipation. In practical applications, this sealing structure effectively protects the internal components of the flexible sensor and ensures its stable operation in various environments.

[0095] Example 3

[0096] Application in high-density server chip heat dissipation: Considering the high requirements of high-density server chips for heat dissipation and sealing, PC is selected as the substrate layer 1, taking advantage of its good dimensional stability and electrical properties. The sealing structure layer adopts a weldable substrate type, and high-airtight sealing is achieved through ultrasonic welding. The barrier layer 3 adopts an Al2O3 / SiO2 multi-layer structure deposited by ALD, strictly controlling the single-layer thickness and the total number of layers to achieve the best barrier effect. The capillary structure layer 4 adopts a double-density capillary structure composed of LCP fibers, which is made by a weaving process, optimizing the liquid return path and improving the heat dissipation efficiency. In actual tests, this sealing structure effectively reduces the operating temperature of the chip and improves the operating stability and reliability of the server.

[0097] Example 4

[0098] Application in transparent display devices, substrate layer 1: ultra-thin soda-lime glass or high borosilicate glass, thickness of 0.1-0.03mm (prepared by chemical thinning or float process), with high light transmittance (≥90%), high temperature resistance (softening point>500℃) and low thermal expansion coefficient (3.3×10 -6 / K); Sealing structure layer 2: Use edge sealing adhesive, low melting point glass powder (such as PbO-B2O3-ZnO system) or UV curing optical adhesive (such as NOA81), WVTR < 0.05g / m after curing 2 / day, meeting the dual requirements of air tightness and light transmittance of transparent display devices; barrier layer 3: Al2O3 / SiO2 multilayer barrier layer is deposited on the inner surface of the glass substrate through the ALD process; capillary structure layer 4: transparent metal oxide fibers (such as SnO2-In2O3 composite fibers) are woven into a double-density structure, the high-density area (porosity 30%) is used for liquid phase reflux, and the low-density area (porosity 70%) is a steam channel, and the light transmittance is greater than 80%. The performance test results are as follows:

[0099] Test Items Conditions / Standards Results Air Tightness (WVTR) 38℃ / 90%RH, ASTM F1249 <![CDATA[2.1×10 -6 g / m 2 / day]]> Light Transmittance Wavelength 550nm, ASTM D1003 Overall Structure > 85% Thermal Cycle Stability -40℃ to 85℃, 500 cycles No Delamination, WVTR Change < 3% Bending Performance (Flexographic Plate) Bending Radius 10mm, 10,000 times No Cracks in the Barrier Layer, Light Transmittance Remains > 82%

[0100] It has the following advantages: High transparency and airtightness: It solves the problem of reduced light transmittance of display devices caused by traditional metal sealing. High temperature resistance: Glass substrate + low melting point glass powder sealing can withstand the local high temperature (>150℃) of the display backlight module. Flexible adaptation: Chemically strengthened glass substrate can be applied to curved screens or rollable display devices.

[0101] In the actual production process, the reliability of both the edge-sealing adhesive structure and the weldable substrate structure has been verified. The entire technical solution performed well in the pilot stage and has the potential for further large-scale production. In the production process, the parameters and preparation process of each layer of the sealing structure can be flexibly adjusted according to different product requirements and application scenarios to achieve the best balance between performance and cost.

[0102] From the analysis of the test results of Examples 1-4, it can be seen that:

[0103] Compatible design of multiple sealing methods: By providing two sealing structure options, edge-sealing glue type and weldable substrate type, it is possible to flexibly select the appropriate sealing method according to different application scenarios and material properties, significantly improving process adaptability. Whether it is for production scenarios that require fast curing and easy operation, or for products that are sensitive to sealants and require glue-free sealing, it can provide effective sealing solutions.

[0104] Achieving extremely low WVTR and OTR: By combining a multi-layer barrier with a nano-deposition structure, the nano-structure of the barrier layer and the sealing layer of the sealing structure layer work together to significantly reduce the water vapor transmission rate (WVTR) and the oxygen transmission rate (OTR). After testing, under the test conditions of 25°C / 60% RH, the WVTR of the edge-sealing adhesive type structure is 3.2×10 -6 g / m 2 / day, and the OTR is 5.1×10 -4 cc / m 2 / day; the WVTR of the weldable substrate type structure is 2.8×10 -6 g / m 2 / day, and the OTR is 4.7×10 -4 cc / m 2 / day, effectively protecting the internal components from the erosion of the external environment and improving the reliability and service life of the product.

[0105] Efficient heat dissipation cycle: The dual-density capillary structure of the capillary structure layer 4 provides an efficient return channel for the two-phase flow liquid, ensuring that after the liquid is heated and evaporated, it can smoothly return to the heat source by capillary action to be heated again, maintaining a stable liquid cycle and achieving an efficient heat dissipation function. This helps to improve the heat dissipation efficiency of the electronic device and ensure the stability and performance of the device under high-load operation.

[0106] Adapting to different terminal structure applications: The dual-density capillary structure of the capillary structure layer 4 provides an efficient return channel for the two-phase flow liquid, ensuring that after the liquid is heated and evaporated, it can smoothly return to the heat source by capillary action to be heated again, maintaining a stable liquid cycle and achieving an efficient heat dissipation function. This helps to improve the heat dissipation efficiency of the electronic device and ensure the stability and performance of the device under high-load operation.

[0107] As described above, it is only a preferred specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any person skilled in the art within the technical scope disclosed by the present invention, according to the technical solution and inventive concept of the present invention, makes equivalent substitutions or changes, and should be covered by the protection scope of the present invention.

Claims

1. Two-phase flow vacuum sealing structure, characterized in that: It includes a substrate layer (1) with two layers and a sealing structure layer (2) arranged at the peripheral edge part of the substrate layer (1). A capillary structure layer (4) is arranged at the central part of the sealing structure layer (2) between the two substrate layers (1). A barrier layer (3) is arranged between the capillary structure layer (4) and the sealing structure layer (2). The substrate layer (1) is made of plastic material or glass material, and the thickness is 0.06 - 0.1 mm. The sealing structure layer (2) is divided into two categories: the first category is the edge-sealing glue type, and the second category is the weldable substrate type. The barrier layer (3) is an Al2O3 / SiO2 multi-layer structure deposited by ALD process or PECVD process, with a single layer thickness of 10-30 nm and a total of 5 layers. Through this Al2O3 / SiO2 multi-layer structure, the water vapor transmission rate (WVTR) can reach 10 -6 g / m 2 / day; The capillary structure layer (4) is composed of Nylon, LCP, Polyester or metal fiber, and has a double-density structure, with a low density on one side and a high density on the other side, or a structure with a high density gradually changing to a low density.

2. The two-phase flow vacuum sealing structure according to claim 1, characterized in that: In the sealing structure layer (2), the edge-sealing adhesive type is applicable to plastic materials and glass materials. The edge-sealing adhesive type uses UV adhesive or thermosetting adhesive, and the water vapor transmission rate WVTR < 0.1 g / m 2 / day, with low outgassing and low permeation characteristics; the weldable substrate type is applicable to plastic materials. The sealing structure layer (2) selects the same plastic material as the substrate layer (1) and realizes sealing through ultrasonic welding.

3. The two-phase flow vacuum sealing structure according to claim 2, characterized in that: The edge-sealing glue type uses UV glue or thermosetting glue. Among them, the curing conditions of the thermosetting glue are a temperature of 80 - 120 °C and a curing time of 10 - 40 minutes.

4. The two-phase flow vacuum sealing structure according to claim 1, wherein: In the preparation process of the barrier layer (3), if the PECVD process is adopted, the process parameters are a temperature of 120 ± 5 °C, a pressure of 0.5 Torr, and a deposition rate of 10 nm / min.

5. The two-phase flow vacuum sealing structure according to claim 1, characterized in that: The double-density structure of the capillary structure layer (4) is made by weaving or sintering process. Based on the capillary phenomenon, the liquid is retained in the high-density area, and the low-density area is the steam flow space, and CVCM ≤ 0.1%, TML < 1% is satisfied.

6. The two-phase flow vacuum sealing structure according to claim 1, wherein: The plastic material is selected from one or more of PC, PET, PI, acrylic, PP, and PE.

7. A manufacturing method of a two-phase flow vacuum sealing structure, which is applied to the two-phase flow vacuum sealing structure according to any one of claims 1-6, characterized in that: It includes the following steps: S1. Prepare the substrate layer (1), select a suitable plastic material or glass material according to the design requirements, and process it to a thickness of 0.06 - 0.1 mm. S2. For the sealing structure layer (2), if it is the edge-sealing glue type, coat UV glue or thermosetting glue on the corresponding substrate, and the thermosetting glue is cured according to the set curing conditions. If it is the weldable substrate type, connect the same plastic as the substrate layer (1) to the substrate layer (1) through ultrasonic welding process. S3. Use the ALD process or the PECVD process to prepare the barrier layer (3) on the inner surface or outer surface of the substrate layer, and control the single-layer thickness of the Al2O3 / SiO2 multi-layer structure to be 10 - 30 nm, and the total number of layers to be 5 layers. S4. Through the weaving or sintering process, use Nylon, LCP, Polyester or metal fiber to prepare the double-density capillary structure layer of the capillary structure layer (4), and then install the capillary structure layer (4) at a suitable position inside the sealing structure.

8. The manufacturing method of the two-phase flow vacuum sealing structure according to claim 7, characterized in that: When preparing the barrier layer (3) in step S3, if the PECVD process is adopted, the temperature needs to be controlled at 120 ± 5 °C, the pressure at 0.5 Torr, and the deposition rate at 10 nm / min.

9. The manufacturing method of the two-phase flow vacuum sealing structure according to claim 7, characterized in that: When curing the UV glue or thermosetting glue of the edge-sealing glue type in step S2, the curing conditions are a temperature of 80 - 120 °C and a curing time of 10 - 40 minutes.

10. Application of a two-phase flow vacuum sealing structure according to any one of claims 1-6, characterized in that: This structure is applied to one or more of the thermal management and packaging systems of mobile terminals, wearable devices, and high-density electronic products.

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