Anti-crosstalk light-emitting unit and manufacturing method thereof

Abstract

The present invention relates to the technical field of semiconductor display devices, and specifically to an anti-crosstalk light-emitting unit and a method for manufacturing the same. A color filter layer, a color conversion layer, an inorganic layer, a chip bonding layer, a micro-LED layer, and a reflective layer are sequentially manufactured on a substrate from bottom to top; a discontinuous fill layer is manufactured on the surface of the reflective layer; and the substrate is subjected to grinding, thinning, cutting, and splitting operations to form independent discrete devices. By providing a reflective layer covering the packaging structure and a discontinuous chip bonding layer, the light emitted by the quantum dots and the micro-LEDs is reflected by the reflective layer, thereby avoiding optical crosstalk between the display units. The reflected light again excites the quantum dots to emit light, thereby improving the light efficiency. The chip bonding layer and the fill layer are both discontinuously provided to avoid substrate warping caused by temperature fluctuations during large-scale production. During cutting and splitting, the number of laser processes can be reduced, thereby improving mass production efficiency. Removing the organic layer can greatly avoid the occurrence of the chip twin problem.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor display devices, and in particular to an anti-crosstalk light-emitting unit and a manufacturing method thereof. Background Art

[0002] Micro LED displays (Micro LED Displays, abbreviated as Micro LEDs) offer high brightness, high reliability, and self-luminescence, and hold great promise for future applications. However, due to an immature industry chain, they currently face challenges such as low yield, high costs, and commercialization difficulties.

[0003] In traditional technology, blue micro-LEDs and quantum dots are fabricated separately, typically using a viscous organic adhesive to integrate the LEDs and quantum dots. Existing technologies often use full-surface organic bonding to combine quantum dots and micro-LEDs in a package, addressing challenges in micro-LED applications.

[0004] However, in the process of producing larger-sized wafers, the product is easily affected by temperature and warps and deforms, the cutting process is complex, the manufacturability is low, and the yield rate is low.

[0005] Based on the problems in the prior art, the present invention provides an anti-crosstalk light-emitting unit and a manufacturing method thereof. Summary of the Invention

[0006] The purpose of the present invention is to provide an anti-crosstalk light-emitting unit and a manufacturing method thereof, so as to solve the technical problems in the prior art that, when manufacturing large-size products, the conventional micro-light-emitting diode packaging structure is easily deformed due to temperature, has a low yield rate, and is not conducive to efficient cutting, resulting in low product mass production.

[0007] The technical solution of the present invention is: a method for manufacturing an anti-crosstalk light-emitting unit, comprising:

[0008] A color filter layer and a color conversion layer are sequentially fabricated on the substrate from bottom to top; a continuous inorganic layer is fabricated on the uncovered surface of the color filter layer and the surface and side surfaces of the color conversion layer; a discontinuous chip bonding layer is fabricated on the inorganic layer; a blue micro-LED layer is transferred and fabricated on the chip bonding layer, and the orthographic projection area of ​​the micro-LED layer is no larger than that of the chip bonding layer; a reflective layer is fabricated on the uncovered surface and side surfaces of the inorganic layer, the exposed surface and side surfaces of the chip bonding layer, and the exposed surface and side surfaces of the micro-LED layer; a discontinuous leveling layer is fabricated on the surface of the reflective layer; and operations including grinding, thinning, laser cutting, and splitting are performed on the substrate to form independent discrete devices.

[0009] Preferably, the electrode portion of the micro-LED layer is exposed from the filling layer to form an extended electrode. The exposed surface of the micro-LED layer is covered by a reflective layer except for the area used to form the extended electrode, and the reflective layer is arranged under the extended electrode.

[0010] Preferably, the chip bonding layer corresponds to the color conversion layer, and the orthographic projection of the chip bonding layer falls within the area where the color conversion layer is located, and the orthographic projection of the micro-LED layer falls within the area where the chip bonding layer is located; the thickness of the chip bonding layer is not greater than 2 .

[0011] Preferably, the filling layer is set to an organic material, including a photolithography polyimide material or an acrylic photoresist material;

[0012] The filling layer covers the surface of the reflective layer and is disconnected on the surface of the micro-LED to form a discontinuous covering-filling structure; and the maximum width of the filling layer is not less than the width of the color filter layer.

[0013] Preferably, at least one group of light-emitting units is simultaneously manufactured on a substrate, wherein a group of light-emitting units includes one display unit or three display units;

[0014] During laser cutting, one display unit or three display units are grouped together, the connections between adjacent light-emitting units are cut, the reflective layer, base layer and substrate between adjacent units are disconnected, and the light-emitting units are divided into discrete devices.

[0015] Preferably, the color filter layers of the three display units in each group of light-emitting units correspond to the first yellow filter, the second yellow filter, and the blue filter one by one; and the three corresponding micro-light-emitting diodes in each group of light-emitting units are independent and discontinuous.

[0016] A color conversion layer is formed on the top surface of the blue filter, the first yellow filter, and the second yellow filter of the color filter layer by photolithography, and the color conversion layer includes an RQD layer, a GQD layer, and a blank layer;

[0017] Among them, the RQD layer and the GQD layer contain red and green quantum dot materials for color conversion, and the blank layer contains no quantum dot material;

[0018] The orthographic projections of the RQD layer, the GQD layer, and the blank layer fall into the areas where the corresponding blue filter, the first yellow filter, and the second yellow filter are located.

[0019] Preferably, the thickness of the color filter layer is 1-5 ; The thickness of the color conversion layer is 3-7 .

[0020] Preferably, the material of the inorganic layer includes one or a combination of SiO2, Al2O3, and TiO2;

[0021] The thickness of the inorganic layer is 20-2000 nm.

[0022] Preferably, the reflective layer can be a DBR structure or a metal reflector, and the thickness of the reflective layer is set to 1-3 .

[0023] An anti-crosstalk light-emitting unit is manufactured using the aforementioned method for manufacturing an anti-crosstalk light-emitting unit, wherein a group of light-emitting units includes three display units;

[0024] Each display unit includes, from bottom to top, a color filter layer, a color conversion layer, an inorganic layer, a chip bonding layer, a micro-LED layer, and a reflective layer;

[0025] The orthographic projection of the color conversion layer falls within the area where the color filter layer is located;

[0026] The inorganic layer continuously covers the exposed side surface of the color filter layer and the exposed side surface and surface of the color conversion layer;

[0027] The chip bonding layer is discontinuous and corresponds to the color conversion layer of each display unit, and the orthographic projection of the chip bonding layer falls within the area where the color conversion layer is located, and the orthographic projection of the micro light-emitting diode layer falls within the area where the chip bonding layer is located;

[0028] Arranging electrodes on the surface of the micro-LED layer and reserving an area for arranging an expansion electrode;

[0029] The filling layer fills and covers the surface of the reflective layer, including the gaps between adjacent display units, and is discontinuously arranged, at least disconnected at the position point of the laser cutting.

[0030] The reflective layer covers all exposed surfaces and sides of the display unit, and the exposed surface of the micro-LED layer is covered by the reflective layer except for the area used to make the extended electrode, and the reflective layer is arranged under the extended electrode.

[0031] Compared with the prior art, the advantages of the present invention are:

[0032] (1) The present invention provides a reflective layer covering the packaging structure and a discontinuous chip bonding layer, so that the reflective layer can go over the chip bonding layer and directly cover the surface of the color filter layer and the color conversion layer; except for the partial area on the surface of the micro-LED used to make the expansion electrode, the entire area is covered by the reflective layer, and the reflective layer is provided under the expansion electrode. Whether the light excited by the quantum dots or the light emitted by the micro-LEDs, they are all reflected by the reflective layer to avoid light crosstalk between display units, and the light reflected by the reflective layer can only be emitted from the light-emitting side. The total energy loss after reflection is less than 10%, and the reflected light passes through the quantum dot area again to excite the quantum dots to emit light, thereby improving the light efficiency.

[0033] (2) Both the chip bonding layer and the filling layer are discontinuously set, which can reduce the substrate warping problem caused by temperature rise and fall during large-scale production.

[0034] (3) After the entire pixel process is completed, when laser cutting and chip splitting are performed, since the chip bonding layer and the filler layer are discontinuous, there is no organic layer at the splitting position, which can reduce the number of laser processes and improve mass production efficiency. In addition, removing the organic layer can greatly avoid the occurrence of chip twin problems and improve product yield.

[0035] (4) The chip bonding layer is discontinuous, and the emission layer can cover the color filter layer, color conversion layer, packaging layer, micro-light-emitting diode and extended electrode, while improving the light efficiency and solving the optical crosstalk, and is suitable for commercial mass production. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] The present invention will be further described below with reference to the accompanying drawings and embodiments:

[0037] Figure 1 This is a schematic cross-sectional view of the color filter layer and the color conversion layer fabricated on the substrate of the present invention;

[0038] Figure 2 Schematic diagram of the cross-sectional structure of a continuous inorganic layer provided on the light conversion layer of the present invention;

[0039] Figure 3 Schematic diagram of the cross-sectional structure of the chip bonding layer of the present invention;

[0040] Figure 4 This is a schematic cross-sectional structure diagram of a micro-LED fabricated on the chip bonding layer of the present invention;

[0041] Figure 5 Schematic diagram of the cross-sectional structure of the reflective layer of the present invention;

[0042] Figure 6 Schematic diagram of the cross-sectional structure of the filling layer of the present invention;

[0043] Figure 7This is a schematic cross-sectional structural diagram of the light-emitting unit of the present invention including three display units;

[0044] Figure 8 This is a schematic cross-sectional structural diagram of the light-emitting unit of the present invention including a display unit;

[0045] Figure 9 is a schematic cross-sectional structural diagram of the display unit of the present invention;

[0046] Figure 10 Schematic diagram of the top view of the display unit of the present invention;

[0047] Figure 11 Schematic diagram of the cross-sectional structure of the light-emitting unit of the present invention;

[0048] Figure 12 Schematic diagram of visible light transmittance curves of different filters according to the present invention;

[0049] Wherein: 100, substrate; 200, color filter layer; 300, color conversion layer; 400, inorganic layer; 500, chip bonding layer; 600, micro-LED layer; 700, reflective layer; 800, filling layer; 900, expansion electrode;

[0050] 201, first yellow filter; 202, second yellow filter; 203, blue filter; 301, RQD layer; 302, GQD layer; 303, blank layer; 601, first blue micro-LED; 602, second blue micro-LED; 603, third blue micro-LED. DETAILED DESCRIPTION

[0051] The present invention will be described in further detail below with reference to specific embodiments:

[0052] A method for manufacturing a light-emitting unit with anti-crosstalk is as follows:

[0053] Step 1: Fabricate a color filter layer 200 on a substrate 100 made of sapphire or glass.

[0054] The sapphire or glass substrate 100 is generally 4-6 inches and 300-1300 mm thick. .

[0055] In one embodiment or other implementations, the color filter layer 200 is configured as a combination of a red filter, a green filter, and a blue filter.

[0056] In another embodiment or other implementation, as shown in the attached Figure 1As shown, the color filter layer 200 is configured as a combination of a first yellow filter 201, a second yellow filter 202 and a blue filter 203. The thickness of the constructed color filter layer 200 is 1-5 .

[0057] Refer to the attached Figure 12 The provided curves show the visible light transmittance of different filters. It can be seen that the red / green / yellow filters have a transmittance of less than 1% for blue light (445-470nm). The red filter has a transmittance of >80% for red light. The green filter has a transmittance of >80% for green light, and the yellow filter has a transmittance of >80% for both red and green light.

[0058] The yellow filter is used to replace the red filter and the green filter. While ensuring the transmittance of red or green light, it can filter out the blue light that cannot be converted by quantum dots, thereby improving the color purity of the output light.

[0059] Step 2: Fabricate the color conversion layer 300 on the color filter layer 200 .

[0060] On the first yellow filter 201, the second yellow filter 202 and the blue filter 203, independent RQD layers 301 (red quantum dots, abbreviated as "RQD"), GQD layers 302 (green quantum dots, abbreviated as "GQD") and blank layers 303 (Blank without quantum dots, abbreviated as "Blank layer") are respectively produced by photolithography. The thickness of the color conversion layer 300 is 3-7 , the production results refer to the attached Figure 2 shown.

[0061] The materials of the RQD layer 301 and the GQD layer 302 are both provided with red and green quantum dot materials for color conversion, while the material of the blank layer 303 (corresponding to the blue filter) does not contain quantum dot materials.

[0062] The downward orthographic projection areas of the RQD layer 301 , the GQD layer 302 and the blank layer 303 are not larger than the top surface areas of the first yellow filter 201 , the second yellow filter 202 and the blue filter 203 corresponding to the bottom.

[0063] Step 3: fabricating the inorganic layer 400 .

[0064] A covering inorganic layer 400 is produced on the surface and side of the color filter layer 200 and the color conversion layer 300, as well as the exposed surface of the substrate 100, using CVD and ALD equipment. The material of the inorganic layer 400 includes one or more composite materials of SiO2, Al2O3, and TiO2, which serves as a barrier to water and oxygen. The inorganic layer 400 is an encapsulation layer, and the thickness of the inorganic layer 400 is 20-2000nm.

[0065] Step 4: fabricate the chip bonding layer 500 .

[0066] On the inorganic layer 400, the chip bonding layer 500 is made inside the color filter layer 200 and the color conversion layer 300. The manufacturing results refer to the attached Figure 3 The thickness of the chip bonding layer 500 is not greater than 2 .

[0067] The chip bonding layer 500 is configured as an organic material, such as a photoresist, including a photoresist polyimide material or an acrylic photoresist material, and is formed into a discontinuous bonding layer by exposure and development, covering the inorganic layer 400 .

[0068] The orthographic projection area of ​​the die bonding layer 500 is no greater than the top surface area of ​​the bottom color conversion layer 300 .

[0069] Step 5: Transfer and manufacture the micro-LED layer 600 on the chip bonding layer 500 .

[0070] The micro-LED layer 600 includes an independent first blue micro-LED 601, a second blue micro-LED 602 ​​and a third blue micro-LED 603, which correspond to the corresponding color filter layer 200 and the color conversion layer 300 at the bottom, respectively. Figure 4 As shown, the projected area of ​​each blue micro LED (micro LED) is also no larger than the top surface area of ​​the chip bonding layer 500 corresponding to the bottom.

[0071] Step 6: Making the reflective layer 700.

[0072] The reflective layer 700 is formed on the uncovered surface and side surfaces of the inorganic layer 400 , the exposed surface and side surfaces of the chip bonding layer 500 , and the exposed surface and surface of the micro light emitting diode layer 600 .

[0073] Refer to the attached Figure 5 As shown, the reflective layer 700 is set to continuously cover the surface of the target structure; or the reflective layer 700 is set discontinuously and is disconnected between adjacent display units (to facilitate cutting and separating into independent devices), refer to the attached Figure 8 shown.

[0074] The exposed surface of the micro-LED layer 600 is covered by the reflective layer 700 except for the area used to form the extended electrode, and the reflective layer 700 is disposed under the extended electrode.

[0075] The reflective layer 700 adopts a DBR structure (Distributed Bragg Reflector) and can be directly manufactured using a commercial DBR coating machine with a thickness of 1-3 .

[0076] Using TiO2 / SiO2 as a repeating unit structure, the thickness of a TiO2 unit is 40-80nm, and the thickness of a SiO2 unit is 70-140nm. Repeating 5 to 20 pairs can achieve more than 99% light reflection.

[0077] The reflective layer 700 is configured as a metal reflector, and the manufacturing method is as follows:

[0078] First, make SiO2 as insulation; second, make a metal layer of Ti and Al structure on SiO2.

[0079] Ti is 1-5nm thick and is used to improve the adhesion of the SiO2 film surface. Al metal is 50-200nm thick and is used to reflect light. The SiO2 structure can be produced using CVD, while the metal can be produced using electron beam evaporation equipment.

[0080] Step 7: Form a filling layer 800 on the surface of the reflective layer 700 .

[0081] The filling layer 800 is made of organic material; generally, it is made of photolithographic polyimide material, or acrylic photoresist. Figure 6 As shown, the filling layer 800 is in a discontinuous covering filling form, filling and covering the surface of the reflective layer, exposing the electrode area on the surface of each micro-LED of the micro-LED layer 600, to facilitate the subsequent production of expanded electrodes.

[0082] The leveling layer 800 is mainly filled between adjacent display units. In addition to filling the gaps between adjacent display units, the leveling layer 800 is also used to provide support for the expansion electrode 900. Usually, the area of ​​the expansion electrode 900 is as large as possible to increase the area of ​​the chip and the external PCB board, and the connection is more stable. Therefore, the surface area of ​​the leveling layer 800 is as large as possible. During the specific implementation of this embodiment, the maximum cross-sectional width of the leveling layer 800 is constrained to be no less than the width of the color filter layer 200.

[0083] Step 8: Fabricate the extended electrode 900 on the surface of the filling layer 800 .

[0084] Each micro-LED layer 600 has a basic electrode on its surface. Figure 6 As shown (the blank part of the micro-LED area in the figure), the electrode realizes electrical connection with the micro-LED layer 600. On the basis of the basic electrode, the electrode is expanded to make an extended electrode 900, which facilitates the welding of the chip and the PCB substrate.

[0085] Step nine: Grind and thin the substrate.

[0086] The initial length of the substrate is usually 4-6 inches and the thickness is 300-1300 .

[0087] For example, all processes are carried out on a 4-inch sapphire substrate, and the original thickness of the sapphire is 600-700 The size of a single display unit of the final product is 80-400 Therefore, after the hierarchical structure is completed, the sapphire substrate is thinned by a grinding process. The sapphire substrate is ground and thinned to 120 the following.

[0088] Step 10: Laser cutting to form independent devices.

[0089] The thinned substrate 100 is attached to a blue film. In one embodiment, the three groups of display units are laser cut as a whole. Figure 11 As shown, laser cutting is performed along any position between the dotted lines in the figure to cut the inorganic layer 400 and the substrate (including the reflective layer 700 if the reflective layer 700 is continuously provided). In another embodiment, each display unit is cut as an independent device, the filler layer 800 between adjacent display units is discontinuous, and the reflective layer 700 can be continuous or discontinuous. See the attached figure. Figure 8 In the embodiment, the reflective layer 700 and the filling layer 800 between adjacent display units are discontinuous.

[0090] After laser cutting, it is split with a conventional splitter to form individual discrete devices. Figure 7 shown.

[0091] Cutting is usually done with a laser. If the laser cutting point is only an inorganic film layer, the same laser parameters can be used for cutting, for example, a picosecond laser with a wavelength of 1064nm and an energy power of 0.1 to 1W.

[0092] If the cutting location is a composite of organic and inorganic layers, multiple laser cutting methods are required. For example, 355nm and 532nm wavelengths, with energies of 0.03 and 0.05W, are used to cut organic adhesives. Therefore, the substrate needs to be switched between different laser devices, and laser alignment is required, making the actual operation very complicated. Furthermore, if the cutting location includes the organic layer, the organic layer may not be cut through by the laser, causing adhesion between chips during the splitting process, resulting in reduced yield.

[0093] In this embodiment, except for the continuous inorganic layer 400, the rest can be discontinuous and set independently according to each display unit. In particular, the chip bonding layer 500 and the filling layer 800 are set discontinuously. This can reduce the substrate warping problem caused by temperature rise and fall during large-scale production. During cutting, one laser parameter cutting is used, which is simple and efficient.

[0094] After the entire pixel process is completed, during laser cutting and chip splitting, no organic layer is set, and most structural layers are set discontinuously, which can reduce the number of laser process cuts and improve efficiency. In addition, removing the organic layer can greatly avoid the occurrence of twin cells.

[0095] The structure of a single display unit is shown in the attached Figure 9 As shown, the cross-sectional width is as follows: from top to bottom, the width of each micro-LED in the micro-LED layer 600 is the smallest, for example, 40 , the width of the chip bonding layer 500 is not less than the width of the micro LED, for example, 40-42 .

[0096] The inorganic layer 400 (encapsulation layer) continuously covers the surface of the substrate 100. The width of the color conversion layer 300 is not less than the chip bonding layer 500. For example, the thickness is 50-70 , and the width of the color filter layer 200 is not less than the color conversion layer, and is set to 60-90 .

[0097] The reflective layer 700 covers the surface and side surfaces of the micro-LED layer 600, the chip bonding layer 500, the color conversion layer, and the color filter layer, so that in the entire micro-LED package structure, only a portion of the P and N electrodes on the surface of the micro-LED layer 600 are exposed, ensuring electrode expansion in subsequent processes. Figure 10 As shown, except for part of the electrode area, all areas are covered by the reflective layer to avoid the problem of optical crosstalk between adjacent display units.

[0098] Based on the above manufacturing method, the present invention also discloses a light-emitting unit for preventing crosstalk, such as Figure 12As shown, a group of light-emitting units includes three display units; each display unit includes, from bottom to top, a color filter layer 200, a color conversion layer 300, an inorganic layer 400, a chip bonding layer 500, a micro-light-emitting diode layer 600, and a reflective layer 700 made on a substrate 100.

[0099] The orthographic projection area of ​​the color conversion layer 300 falls within the area of ​​the color filter layer 200;

[0100] The inorganic layer 400 continuously covers the exposed side surfaces of the color filter layer 200 and the exposed side surfaces and surface of the color conversion layer 300;

[0101] The chip bonding layer 500 is discontinuous and corresponds to the color conversion layer 300 of each display unit. The orthographic projection area of ​​the chip bonding layer 500 falls within the area where the color conversion layer 300 is located, and the orthographic projection area of ​​each micro-LED of the micro-LED layer 600 falls within the area where the chip bonding layer 500 is located.

[0102] The filler layer 800 covers the surface of the reflective layer 700, including filling the gaps between adjacent display units, and is discontinuously provided, at least interrupted at the laser cutting point. The maximum cross-sectional width of the filler layer 800 is not less than the width of the color filter layer 200.

[0103] Electrodes are set on the surface of the micro-LED layer 600 and an area is reserved for setting the extended electrode 900; the extended electrode 900 is extended outwardly and arranged on the surface of the filling layer 800 to connect the chip and the external PCB board.

[0104] The reflective layer 700 covers all exposed surfaces and sides of the display unit, including the uncovered surfaces and sides of the inorganic layer, the surface and sides of the chip bonding layer, and the exposed surfaces and sides of the micro LED layer 600 .

[0105] Refer to the attached Figure 9 As shown, except for a portion of the surface of the micro-LED layer 600 used to make the extended electrode, the entire surface is covered by the reflective layer 700 , and the reflective layer 700 is disposed under the extended electrode 900 .

[0106] In the package structure of the light-emitting display unit provided by the present invention, the reflective layer 700 extends beyond the chip bonding layer 500 and the inorganic layer 400 (no organic layer is provided), covering and shielding the exposed surfaces of the color conversion layer 300 and the color filter layer 200. This eliminates optical crosstalk in the packaged chip structure, and light reflected by the reflective layer 700 is emitted only through the color conversion layer 300 and the color filter layer 200, effectively strengthening the emitted light and improving light efficiency. The discontinuous reflective layer 700, filler layer 800, and chip bonding layer 500 facilitate chip separation and prevent warping caused by temperature during the chip manufacturing process.

[0107] The above embodiments are only for illustrating the technical concept and features of the present invention, and their purpose is to enable people familiar with this technology to understand the content of the present invention and implement it accordingly, and they are not intended to limit the scope of protection of the present invention. For those skilled in the art, it is obvious that the present invention is not limited to the details of the above exemplary embodiments, and the present invention can be implemented in other specific forms without departing from the spirit or basic characteristics of the present invention. Therefore, no matter from which point of view, the embodiments should be regarded as exemplary and non-restrictive. The scope of the present invention is defined by the appended claims rather than the above description, and it is intended that all changes that fall within the meaning and scope of the equivalent elements of the claims are included in the present invention.

Claims

1. A method for manufacturing an anti-crosstalk light-emitting unit, characterized in that: include: A color filter layer and a color conversion layer are sequentially formed on the substrate from bottom to top; forming a continuous inorganic layer on the uncovered surface of the color filter layer and the surface and side of the color conversion layer; forming a discontinuous chip bonding layer on the inorganic layer; A blue micro-light emitting diode layer is transferred and manufactured on the chip bonding layer; the orthographic projection area of ​​the micro-light emitting diode layer is not larger than the chip bonding layer; A reflective layer is formed on the uncovered surface and side of the inorganic layer, the exposed surface and side of the chip bonding layer, and the exposed surface and side of the micro-LED layer; and a discontinuous filling layer is formed on the surface of the reflective layer; The electrode portion of the micro-LED layer is exposed from the filling layer to form an expansion electrode. The exposed surface of the micro-LED layer is covered by a reflective layer except for the area used to form the expansion electrode. The reflective layer is provided below the expansion electrode. The substrate is subjected to operations including grinding, thinning, laser cutting and cleaving to form independent discrete devices.

2. The method for manufacturing an anti-crosstalk light-emitting unit according to claim 1, wherein: The chip bonding layer corresponds to the color conversion layer, and the orthographic projection of the chip bonding layer falls within the area where the color conversion layer is located, and the orthographic projection of the micro-LED layer falls within the area where the chip bonding layer is located; the thickness of the chip bonding layer is not greater than 2μm.

3. The method for manufacturing an anti-crosstalk light-emitting unit according to claim 2, characterized in that: The filling layer is set to be an organic material, including a photolithography polyimide material or an acrylic photoresist material; The filling layer covers the surface of the reflective layer and is disconnected on the surface of the micro-LED to form a discontinuous covering-filling structure; and the maximum width of the filling layer is not less than the width of the color filter layer.

4. The method for manufacturing an anti-crosstalk light-emitting unit according to claim 1, wherein: At least one group of light-emitting units is simultaneously manufactured on a substrate, wherein the group of light-emitting units includes one display unit or three display units; During laser cutting, one display unit or three display units are grouped together, the connections between adjacent light-emitting units are cut, the reflective layer, base layer and substrate between adjacent units are disconnected, and the light-emitting units are divided into discrete devices.

5. The method for manufacturing an anti-crosstalk light-emitting unit according to claim 4, characterized in that: The color filter layers of the three display units in each group of light-emitting units correspond to the first yellow filter, the second yellow filter, and the blue filter one by one; the three micro-light-emitting diodes corresponding to each group of light-emitting units are independent and discontinuous; A color conversion layer is formed on the top surface of the blue filter, the first yellow filter, and the second yellow filter of the color filter layer by photolithography, and the color conversion layer includes an RQD layer, a GQD layer, and a blank layer; Among them, the RQD layer and the GQD layer contain red and green quantum dot materials for color conversion, and the blank layer contains no quantum dot material; The orthographic projections of the RQD layer, the GQD layer, and the blank layer fall into the areas where the corresponding blue filter, the first yellow filter, and the second yellow filter are located.

6. The method for manufacturing an anti-crosstalk light-emitting unit according to claim 1, characterized in that: The thickness of the color filter layer is 1-5 μm; the thickness of the color conversion layer is 3-7 μm.

7. The method for manufacturing an anti-crosstalk light-emitting unit according to claim 1, characterized in that: The material of the inorganic layer includes one or a combination of SiO2, Al2O3, TiO2; The thickness of the inorganic layer is 20-2000 nm.

8. The method for manufacturing an anti-crosstalk light-emitting unit according to claim 1, characterized in that: The reflective layer is configured as a DBR structure or a metal reflector, and the thickness of the reflective layer is configured to be 1-3 μm.

9. An anti-crosstalk light-emitting unit, characterized in that: It is manufactured by the manufacturing method of the anti-crosstalk light-emitting unit according to any one of claims 1 to 8, and a group of light-emitting units includes three display units; Each display unit includes, from bottom to top, a color filter layer, a color conversion layer, an inorganic layer, a chip bonding layer, a micro-LED layer, and a reflective layer; The orthographic projection of the color conversion layer falls within the area where the color filter layer is located; The inorganic layer continuously covers the exposed side surface of the color filter layer and the exposed side surface and surface of the color conversion layer; The chip bonding layer is discontinuous and corresponds to the color conversion layer of each display unit, and the orthographic projection of the chip bonding layer falls within the area where the color conversion layer is located, and the orthographic projection of the micro light-emitting diode layer falls within the area where the chip bonding layer is located; Arranging electrodes on the surface of the micro-LED layer and reserving an area for arranging an expansion electrode; The filling layer fills and covers the surface of the reflective layer, including the gaps between adjacent display units, and is discontinuously arranged, at least disconnected at the position point of the laser cutting; The reflective layer covers all exposed surfaces and sides of the display unit, and the exposed surface of the micro-LED layer is covered by the reflective layer except for the area used to make the extended electrode, and the reflective layer is arranged under the extended electrode.

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