Copper electroplating metallization heterojunction perovskite laminated solar cell

Abstract

The invention discloses a copper electroplating metallization heterojunction perovskite laminated solar cell, and belongs to the technical field of solar cell panels. Comprising a front copper electroplating metal wire layer, a front copper electroplating seed layer, a front sandwich structure transparent conductive protection film layer, a buffer layer, an electron transport layer, a perovskite absorption layer, a hole transport layer, an interface conductive layer, a heterojunction cell multilayer film structure layer, a back sandwich structure transparent conductive protection film layer and a back copper electroplating seed layer. A back copper electroplating metal wire layer; the front copper electroplating metal wire layer, the front copper electroplating seed layer, the front sandwich structure transparent conductive protection film layer, the buffer layer, the electron transport layer, the perovskite absorption layer, the hole transport layer, the interface conductive layer, the heterojunction cell multilayer film structure layer, the back sandwich structure transparent conductive protection film layer and the back copper electroplating seed layer are arranged on the front copper electroplating metal wire layer. And the back copper electroplating metal wire layers are mounted together. The power generation efficiency is high, the cost is low, the reliability is improved, and the service life is prolonged.

Description

Technical Field

[0001] The present invention relates to the technical field of solar cells, and in particular to a copper electroplated metallized heterojunction perovskite tandem solar cell. Background Art

[0002] With the development of technology and the expansion of the market scale, the production capacity of solar panel technology has been continuously expanding. In order to improve efficiency, reducing the proportion of the balance of system (BOS) cost in the production cost structure of the entire photovoltaic power generation system has become more important. That is to say, high-efficiency components will play the most important role in reducing the system cost, because they can save more BOS costs when providing the same amount of electricity. Among all solar cell technologies, solar panel components based on silicon-based heterojunction (HJT) have important research and application values because of their high conversion efficiency (25.5%), simple structure, low process temperature (<250°C), few process steps, and low temperature coefficient. Compared with traditional P-type single-crystalline / polycrystalline solar cells, HJT cells with N-type single-crystalline substrates have characteristics and advantages such as high efficiency, simple process, no light-induced degradation (LID free), no potential-induced degradation (PID free), low temperature coefficient, high power generation, low light-induced degradation, low power generation cost, and bifacial power generation, which ensure more reliable photovoltaic modules, lower power station construction costs, and longer service life. They are very suitable for distributed photovoltaic applications and are one of the mainstream technologies for the next generation of high-efficiency batteries. Specifically, in actual applications, bifacial heterojunction modules are used, and under the albedo of a white background, more than 20% of the power can be output (according to on-site tests, using bifacial HJT modules can output an average of 28.9% more power than single-sided HJT modules).

[0003] In the process of manufacturing HJT solar cells, PECVD (Plasma Enhanced Chemical Vapor Deposition process) plays the most important role in determining the performance of the product. Specifically, the passivation layer deposited on the light-incident surface is an intrinsic layer (i) and a boron-doped (p) layer is stacked on it. Similarly, an intrinsic passivation layer (i) is deposited on the back and a phosphorus-doped (n) layer is stacked. The thicknesses of the surface passivation layers i / p and i / n are both about 15 - 25 nm. Then, a transparent conductive film (TCO) with a thickness of about 50 - 200 nm is sputtered on both the front and back sides. In the prior art, traditional sputtered ITO (Indium Tin Oxide) is mostly used as the transparent conductive film layer (TCO), or IWO (Indium Tungsten Oxide) is evaporated by RPD (Reactive Plasma Deposition) technology as the transparent conductive film. Then, the front and back conductors can be made by screen-printing low-temperature silver paste on the transparent conductive film, or the front and back conductors can be made by electroforming copper. In this way, the production of an HJT cell is completed.

[0004] Perovskite materials are a type of materials with the same crystal structure as calcium titanate (CaTiO3). They were discovered by Gustav Rose in 1839 and later named by the Russian mineralogist L. A. Perovski. The general structural formula of perovskite materials is ABX3 (A and B are two cations, and X is an anion). This peculiar crystal structure endows it with many unique physical and chemical properties, such as optical rotation absorption, electrocatalysis, etc., and has significant applications in the fields of chemistry and physics. Among them, A is an organic cation, usually an aliphatic or aromatic ammonium, B is a divalent metal cation, such as Ge2+, Sn2+, Pb2+… etc., and X is a halogen anion (Cl-, Br-, I-). The existing technology has prepared perovskite solar cells by using organic-inorganic hybrid perovskite materials CH3NH3PbI3 and CH3NH3PbBr3 to replace the dyes in traditional DSSCs as new photosensitizers. After years of development, the conversion efficiency of this solar cell in the laboratory has been able to reach more than 23% compared with solar cells prepared from ordinary materials, and it has the advantage of lower cost. Although the power generation efficiency of perovskite batteries has been rapidly improved in recent years, due to structural and manufacturing process limitations, perovskite materials are vulnerable to temperature, water vapor, and oxygen, and still have the disadvantages of poor stability and low weather resistance. Therefore, it is very necessary to provide a perovskite tandem solar cell based on the silicon-based heterojunction (HJT) process that can overcome the influence of temperature, water vapor, and oxygen, and improve the power generation efficiency and stability. Summary of the Invention

[0005] In order to overcome the disadvantages of poor stability and low weather resistance of existing perovskite solar cells due to structural and manufacturing process limitations, the present invention provides a copper-plated metallized heterojunction perovskite tandem solar cell that, under the combined action of relevant structures and manufacturing processes, has the advantages of high water vapor resistance and high transmittance at long wavelengths. It can prevent water vapor or electroplating solution from penetrating through the film layer into the perovskite light-absorbing layer, causing material cracking and efficiency reduction, improve the light input and the power collection ability of the grid lines, increase the output current and FF (maximum output power), greatly increase the photoelectric conversion efficiency, reduce the overall production cost, extend the service life, and is conducive to market promotion and product popularization.

[0006] The technical solution adopted by the present invention to solve its technical problems is: A copper electroplated metallized heterojunction perovskite tandem solar cell, comprising a front copper electroplated metal wire layer, a front copper electroplated seed layer, a front sandwich structure transparent conductive protective film layer, a buffer layer, an electron transport layer, a perovskite absorption layer, a hole transport layer, an interface conductive layer, a heterojunction cell multi-layer film structure layer, a back sandwich structure transparent conductive protective film layer, a back copper electroplated seed layer, and a back copper electroplated metal wire layer; the front copper electroplated metal wire layer, the front copper electroplated seed layer, the front sandwich structure transparent conductive protective film layer, the buffer layer, the electron transport layer, the perovskite absorption layer, the hole transport layer, the interface conductive layer, the heterojunction cell multi-layer film structure layer, the back sandwich structure transparent conductive protective film layer, the back copper electroplated seed layer, and the back copper electroplated metal wire layer are sequentially installed together from top to bottom; the front copper electroplated metal wire layer is a metal circuit, and the material used for the front copper electroplated seed layer is copper; the first and third layers of the front sandwich structure transparent conductive protective film layer are indium tin oxide materials, and the middle layer is indium zinc oxide material; the buffer layer is zinc oxide tin material, and the electron transport layer is a C60 film layer; the hole transport layer is nickel oxide material; the interface conductive layer is indium tin oxide material; the heterojunction cell multi-layer film structure layer is composed of an N-type silicon wafer and a front intrinsic amorphous silicon layer film, a back intrinsic amorphous silicon layer film, a front n-type microcrystalline silicon film, and a back P-type microcrystalline silicon layer film on its upper end surface; the first and third layers of the back sandwich structure transparent conductive protective film layer are indium tin oxide materials, and the middle layer is indium zinc oxide material; the material of the back copper electroplated seed layer is copper; the back copper electroplated metal wire layer is a metal circuit.

[0007] Further, the thickness of the front copper electroplated metal wire layer is 5 - 20 um, the width is 10 - 100 um, and the resistivity is less than 3×10 -6 Ω·cm; the front copper electroplated seed layer can also adopt one of silver, copper alloy, and silver alloy materials, with a thickness of 30 - 100 nm and a resistivity less than 5×10 -6 Ω·cm.

[0008] Further, the first and third layers of the front sandwich structure transparent conductive protective film layer can also adopt one of indium tungsten oxide, indium hafnium oxide, indium gallium oxide, indium zirconium oxide, and indium titanium oxide materials; the middle layer can also adopt indium tin zinc oxide; the total thickness of the three layers of the front sandwich structure transparent conductive protective film layer is 80 - 200 nm, the resistivity is less than 5×10 -4 Ω·cm, the refractive index is 1.9 - 2.1, and the total light transmittance of the three layers is greater than 90%.

[0009] Further, the buffer layer can also adopt one of indium tungsten oxide, indium cerium oxide, titanium oxide, aluminum oxide, and tin oxide materials, with a thickness of 10 - 80 nm; the electron transport layer can also adopt a LiF film layer, with a thickness of 10 - 80 nm.

[0010] Further, the perovskite absorption layer adopts a Cs, FA, and MA co-cation perovskite material, with a bandgap range of 1.65 - 1.70 eV and a thickness of 100 - 1000 nm.

[0011] Further, the hole transport layer can also adopt one of nickel magnesium oxide, nickel lithium oxide, nickel copper oxide, copper aluminum oxide, and strontium copper oxide materials, with a thickness of 15 - 80 nm; the interface conductive layer can also adopt one of indium tungsten oxide, indium hafnium oxide, indium gallium oxide, indium zirconium oxide, aluminum zinc oxide, gallium zinc oxide, and indium titanium oxide materials, with a thickness of 15 - 35 nm and a resistivity less than 9×10 -4 Ω·cm and a refractive index of 1.9 - 2.1.

[0012] Further, the thickness of the heterojunction cell multi-layer film structure layer is 50 - 180 μm, the thickness of the front intrinsic amorphous silicon layer film is 5 - 25 nm, the thickness of the back intrinsic amorphous silicon layer film is 5 - 25 nm, the thickness of the front n-type microcrystalline silicon film is 5 - 25 nm, and the thickness of the back P-type microcrystalline silicon layer film is 5 - 25 nm.

[0013] Further, the first and third layers of the back sandwich structure transparent conductive protective film layer can also adopt one of indium tungsten oxide, indium hafnium oxide, indium gallium oxide, indium zirconium oxide, and indium titanium oxide materials, the middle layer can also adopt indium tin zinc oxide, the total thickness of the three layers is 80 - 200 nm, the resistivity is less than 9×10 -4 Ω·cm, the refractive index is 1.9 - 2.1, and the total light transmittance of the three layers is greater than 90%.

[0014] Further, the back copper electroplating seed layer can also adopt one of gold, silver, copper alloy, and silver alloy, with a thickness of 30 - 100 nm and a resistivity less than 5×10 -6 Ω·cm.

[0015] Further, the back copper electroplating metal wire layer is a metal circuit, with a circuit layer thickness of 5 - 20 μm, a width of 10 - 100 μm, and a resistivity less than 3×10 -6 Ω·cm.

[0016] The beneficial effects of the present invention compared with the prior art are as follows: The front and back of the present invention adopt a sandwich transparent conductive film layer design, which takes into account reducing the interface impedance, and has the advantages of improving the moisture resistance of the finished product and high transmittance at long wavelengths; linear gas plasma sputtering (LGPS) is used to fabricate the sandwich transparent conductive film layer. The first and third layers use transparent conductive oxide materials with low doping and high carrier mobility, and the middle uses an amorphous transparent conductive oxide with high moisture resistance. The perovskite stacked cell based on HJT also adopts a buffer layer with high moisture resistance and high weather resistance, which can prevent moisture or electroplating solution from penetrating through the film layer into the perovskite light-absorbing layer, causing material cracking and efficiency reduction; the copper electroplating metallization process with high conductivity can reduce the grid line width and increase the number of grid lines, which helps to improve the light input and the power collection ability of the grid lines, increase the current and FF, and greatly increase the photoelectric conversion efficiency. Moreover, when double-glass encapsulated, both sides can absorb light and generate electricity. The power generation efficiency of the present invention is greatly improved, the overall production cost is reduced, and due to the improvement of reliability, the service life is extended, which is conducive to the market promotion and product popularization. Brief Description of the Drawings

[0017] Figure 1 It is a schematic structural diagram of the present invention.

[0018] In the figure, 1 is the front copper electroplated metal wire layer; 2 is the front copper electroplating seed layer; 3 is the front sandwich structure transparent conductive protective film layer; 4 is the buffer layer; 5 is the electron transport layer; 6 is the perovskite absorption layer; 7 is the hole transport layer; 8 is the interface conductive layer; 9 is the heterojunction (HJT) cell multi-layer film structure layer; 10 is the back sandwich structure transparent conductive protective film layer; 11 is the back copper electroplating seed layer; 12 is the back copper electroplated metal wire layer. Detailed Embodiments

[0019] Figure 1As shown in the figure, a copper-plated metallized heterojunction perovskite tandem solar cell includes a front copper-plated metal wire layer (1), a front copper-plating seed layer (2), a front sandwich-structured transparent conductive protective film layer (3), a buffer layer (4), an electron transport layer (5), a perovskite absorption layer (6), a hole transport layer (7), an interface conductive layer (8), a heterojunction (HJT) cell multi-layer film structure layer (9), a back sandwich-structured transparent conductive protective film layer (10), a back copper-plating seed layer (11), and a back copper-plated metal wire layer (12); the front copper-plated metal wire layer (1), the front copper-plating seed layer (2), the front sandwich-structured transparent conductive protective film layer (3), the buffer layer (4), the electron transport layer (5), the perovskite absorption layer (6), the hole transport layer (7), the interface conductive layer (8), the heterojunction (HJT) cell multi-layer film structure layer (9), the back sandwich-structured transparent conductive protective film layer (10), the back copper-plating seed layer (11), and the back copper-plated metal wire layer (12) are sequentially installed together from top to bottom.

[0020] Figure 1As shown, the front copper electroplated metal wire layer (1) is a metal circuit prepared by using one of the ink mask, yellow light process, and copper electroplating process (the function is to form an electrode to conduct current). The front copper electroplating seed layer (2) is prepared by vacuum sputtering using one of copper, silver, copper alloy, or silver alloy (the front copper electroplating seed layer has high conductivity). The first and third layers of the front sandwich structure transparent conductive protective film layer (3) are specifically prepared by linear gas flow plasma sputtering using one of the materials such as indium tin oxide (ITO), indium tungsten oxide (IWO), indium hafnium oxide (IHO), indium gallium oxide (IGO), indium zirconium oxide (IZrO), or indium titanium oxide (ITiO), etc., and it serves as a transparent conductive layer with high mobility; the middle layer is an amorphous transparent conductive film layer prepared by linear gas flow plasma sputtering using one of the materials such as indium zinc oxide (IZO) or indium tin zinc oxide (IZTO), etc. (the function of the transparent conductive protective film layer is to achieve high light transmittance, collect current, and protect the internal film layer structure). The buffer layer (4) is a thin film layer prepared by linear gas flow plasma sputtering using one of the materials such as indium tungsten oxide (IWO), indium cerium oxide (ICO), zinc tin oxide (ZTO), titanium dioxide (TiO2), aluminum oxide (Al2O3), or tin oxide (SnO2), etc. (the thin film layer has high chemical stability and can serve the purpose of electron transport and protecting the internal film layer). The electron transport layer (5) is a C60 film layer or a LiF film layer made by linear thermal evaporation (the function is to achieve electron transport). The perovskite absorption layer (6) is specifically a perovskite absorption layer made by linear thermal evaporation (the function is to achieve light absorption and conversion into electrons and holes). The hole transport layer (7) is a thin film layer prepared by vacuum magnetron sputtering using one of the materials such as nickel oxide (NiO), nickel magnesium oxide (NiMgO), nickel lithium oxide (NiLiO), nickel copper oxide (NiCuO), copper aluminum oxide (CuAlO), or strontium copper oxide (SrCuO), etc. (it serves the purpose of hole transport). The interface conductive layer (8) is prepared by vacuum sputtering using one of the materials such as indium tin oxide (ITO), indium tungsten oxide (IWO), indium hafnium oxide (IHO), indium gallium oxide (IGO), indium zirconium oxide (IZrO), aluminum zinc oxide (AZO), gallium zinc oxide (GZO), or indium titanium oxide (ITiO), etc. (it serves the purpose of connecting the HJT bottom cell and the perovskite top cell). The heterojunction (HJT) cell multi-layer film structure layer (9) is composed of a front intrinsic amorphous silicon layer film, a back intrinsic amorphous silicon layer film, a front n-type microcrystalline silicon film, and a back P-type microcrystalline silicon layer film made on an N-type silicon wafer by plasma enhanced chemical vapor deposition (PECVD) (specifically, it is a basic structure of an HJT cell).The first and third layers of the back sandwich structure transparent conductive protective film layer (10) are prepared by a linear gas flow plasma sputtering process using one of materials such as indium tin oxide (ITO), indium tungsten oxide (IWO), indium hafnium oxide (IHO), indium gallium oxide (IGO), indium zirconium oxide (IZrO), or indium titanium oxide (ITiO) as a transparent conductive layer with high mobility; the middle layer is prepared by a linear gas flow plasma sputtering process using one of materials such as indium zinc oxide (IZO) or indium tin zinc oxide (IZTO) as an amorphous transparent conductive film layer (the transparent conductive protective film layer can play the roles of high light transmittance, current collection, and protection of the internal film layer structure). The back copper electroplating seed layer (11) is prepared by a vacuum sputtering process using one of copper, silver, copper alloy, or silver alloy materials (the seed layer has high conductivity). The back copper electroplating metal wire layer (12) is a metal circuit prepared by one of ink masking, yellow light process, and electroplating copper process.

[0021] Figure 1 As shown, for the front copper electroplating metal wire layer (1), the thickness of its circuit layer is 5 - 20 μm, the width is 10 - 100 μm, and the resistivity is less than 3×10 -6 Ω·cm. The thickness of the front copper electroplating seed layer (2) is 30 - 100 nm, and the resistivity is less than 5×10 -6 Ω·cm. The total thickness of the three layers of the front sandwich structure transparent conductive protective film layer (3) is 80 - 200 nm, the resistivity is less than 5×10 -4 Ω·cm, the refractive index is 1.9 - 2.1, and the total light transmittance of the three layers is greater than 90%. The thickness of the buffer layer (4) is 10 - 80 nm. The thickness of the electron transport layer (5) is 10 - 80 nm. The perovskite absorption layer (6) uses a Cs, Fa, and MA mixed cation perovskite material, its band gap range is 1.65 - 1.70 eV, and its thickness is 100 - 1000 nm. The thickness of the hole transport layer (7) is 15 - 80 nm. The thickness of the interface conductive layer (8) is 15 - 35 nm, the resistivity is less than 9×10 -4 Ω·cm, and the refractive index is 1.9 - 2.1. The body center of the heterojunction (HJT) cell multi-layer film structure layer (9) is an N-type monocrystalline silicon wafer with a thickness of 50 - 180 μm. On the N-type silicon wafer, a front intrinsic amorphous silicon layer film is fabricated using plasma enhanced chemical vapor deposition (PECVD), and its film thickness is 5 - 25 nm; a back intrinsic amorphous silicon layer film, and its film thickness is 5 - 25 nm; a front n-type microcrystalline silicon film, and its film thickness is 5 - 25 nm; and a back P-type microcrystalline silicon layer film, and its film thickness is 5 - 25 nm. The total thickness of the three layers of the back sandwich structure transparent conductive protective film layer (10) is 80 - 200 nm, and the resistivity is less than 5×10 -4Ω cm, with a refractive index of 1.9 - 2.1, and the total transmittance of the three layers is greater than 90%. The thickness of the seed layer (11) for backside copper electroplating is 30 - 100 nm, and the resistivity is less than 5×10 -6 Ω cm. The thickness of the backside copper electroplated metal wire layer (12) is 5 - 20 μm, the width is 10 - 100 μm, and the resistivity is less than 3×10 -6 Ω cm.

[0022] Figure 1 As shown, in actual production, before the deposition of the multi-layer film structure layer (9) of the heterojunction (HJT) cell, the N-type monocrystalline silicon wafer substrate needs to be pretreated, including cleaning, antistatic treatment, texturing surface treatment, etc.; the front intrinsic amorphous silicon film layer, the back intrinsic amorphous silicon film layer, the front n-type microcrystalline silicon film layer, and the back p-type microcrystalline silicon film layer are in a plasma-enhanced chemical vapor deposition equipment (PECVD), and gases such as silane (SiH4), phosphine (PH3), trimethylborane TMB (CH3), and H2 (Ar) are respectively introduced, and the film layer depositions are successively completed on the N-type monocrystalline silicon wafer substrate. The substrate temperature is 150 - 500 °C. The front intrinsic amorphous silicon film layer is 5 - 25 nm thick, the back intrinsic amorphous silicon film layer is 5 - 25 nm thick, the front n-type microcrystalline silicon film layer is 5 - 25 nm thick, and the back p-type microcrystalline silicon film layer (5 - 25 nm thick). In the plasma-enhanced chemical vapor deposition equipment (PECVD), the film layer depositions are successively completed, thus completing the deposition of the multi-layer film structure layer (9) of the heterojunction (HJT) cell. For the deposition of the interface conductive layer (8), the background pressure of the sputtering chamber is pumped to 0.7×10 -5 ~0.9×10 -5 torr by a vacuum pumping system, and argon is used as the working gas. The working pressure of the sputtering chamber is controlled to be 3×10 -3 torr through a throttle valve. Materials such as indium tin oxide (ITO), indium tungsten oxide (IWO), indium hafnium oxide (IHO), indium gallium oxide (IGO), indium zirconium oxide (IZrO), aluminum zinc oxide (AZO), gallium zinc oxide (GZO), or indium titanium oxide (ITiO) are used as the targets; a 15 - 35 nm thick film layer is sputtered on the n-type microcrystalline silicon film layer, and the resistivity is less than 9×10 -4 Ω cm, thus completing the deposition of the interface conductive layer (8), with a thickness of 15 - 35 nm and a refractive index of 1.9 - 2.1. For the deposition of the backside sandwich structure transparent conductive protective film layer (10), specifically, the background pressure of the sputtering chamber is pumped to 0.7×10 -5 ~0.9×10 -5 torr by a vacuum pumping system, and argon is used as the working gas. The working pressure of the sputtering chamber is controlled to be 3×10 -3torr. For the target using relevant materials, the first layer and the third layer are made of indium tin oxide (ITO), indium tungsten oxide (IWO), indium hafnium oxide (IHO), indium gallium oxide (IGO), indium zirconium oxide (IZrO), or indium titanium oxide (ITiO) and other materials sputtered by a linear gas flow plasma cathode as a transparent conductive layer with high mobility; the middle layer is made of an amorphous transparent conductive film layer such as indium zinc oxide material (IZO) or indium tin zinc oxide (IZTO) sputtered by a linear gas flow plasma cathode; the total thickness of the three layers is 80 - 200 nm, the resistivity is less than 5×10 -4 Ω·cm, the refractive index is 1.9 - 2.1, and the total light transmittance of the three layers is greater than 90%; thus, on the p-type microcrystalline silicon film layer, the plating of the back sandwich structure transparent conductive protective film layer (10) is completed. For the production of the hole transport layer (7), after evacuating the background pressure of the vacuum magnetron sputtering cavity to 0.7×10-5~0.9×10-5 torr by a vacuum pumping system, using targets such as nickel oxide (NiO), nickel lithium oxide (NiLiO), nickel magnesium oxide (NiMgO), nickel copper oxide (NiCuO), copper aluminum oxide (CuAlO), or strontium copper oxide (SrCuO), on the interface conductive layer (8), thin films such as nickel oxide (NiO), nickel magnesium oxide (NiMgO), nickel copper oxide (NiCuO), copper aluminum oxide (CuAlO), or strontium copper oxide (SrCuO) are sputtered and deposited, with a thickness of 15 - 80 nm, thus completing the production of the hole transport layer (7). For the production of the perovskite light-absorbing layer (6), first place the perovskite material in the metal crucible of the linear thermal evaporation equipment. The perovskite absorption layer uses a Cs, FA, and MA mixed cation perovskite material with a bandgap range of 1.65~1.70 eV. After evacuating the background pressure of the sputtering cavity to 0.7×10 -5 ~0.9×10 -5 torr, heat the linear metal crucible to about 250 °C to thermally evaporate the material and attach it to the hole transport layer (7), thus completing the preparation of the perovskite light-absorbing layer (6) with a thickness of 100 - 1000 nm. For the production of the electron transport layer (5), place the material of C60 or LiF in the metal crucible of the linear thermal evaporation equipment. After evacuating the background pressure of the sputtering cavity to 0.7×10-5~0.9×10-5 torr by a vacuum pumping system, heat the linear metal crucible to about 300 °C to thermally evaporate the material and attach it to the perovskite light-absorbing layer (6), thus completing the preparation of the electron transport layer (5) with a thickness of 15 - 80 nm. For the production of the buffer layer (4), by linear gas flow plasma sputtering, the vacuum pumping system evacuates the background pressure of the sputtering cavity to 0.7×10 -5 -0.9×10 -5After reaching -3 torr, argon is used as the working gas, and the throttle valve is used to control the working pressure of the sputtering chamber to 3×10 -5 ~0.9×10 -5 torr. Materials such as indium tungsten oxide (IWO), indium cerium oxide (ICO), zinc tin oxide (ZTO), titanium dioxide (TiO2), aluminum oxide (Al2O3), or tin oxide (SnO2) are used to sputter thin film layers such as zinc tin oxide (ZTO), titanium dioxide (TiO2), aluminum oxide (Al2O3), or tin oxide (SnO2) on the electron transport layer (5), with a thickness of 15 - 80 nm, thereby completing the fabrication of the buffer layer (4). For the deposition of the front sandwich-structured transparent conductive protective film layer (3), the background pressure of the sputtering chamber is pumped to 0.7×10 -3 ~0.9×10 -4 torr by the vacuum pumping system. Then, argon is used as the working gas, and the throttle valve is used to control the working pressure of the sputtering chamber to 3×10 -5 ~0.9×10 -5 torr. Targets of related materials are used. The first and third layers are sputtered with materials such as indium tin oxide (ITO), indium tungsten oxide (IWO), indium hafnium oxide (IHO), indium gallium oxide (IGO), indium zirconium oxide (IZrO), or indium titanium oxide (ITiO) as highly mobile transparent conductive layers using a linear gas flow plasma cathode; the middle layer is sputtered with an amorphous transparent conductive film layer such as indium zinc oxide material (IZO) or indium tin zinc oxide (IZTO) using a linear gas flow plasma cathode; the total thickness of the three layers is 80 - 200 nm, the resistivity is less than 5×10 -3 Ωcm, the refractive index is 1.9 - 2.1, and the total light transmittance of the three layers is greater than 90%. Thus, on the p-type microcrystalline silicon film layer, the deposition of the front sandwich-structured transparent conductive protective film layer (10) is completed. For the fabrication of the front and back copper electroplating seed layers (2), (11), the background pressure of the sputtering chamber is pumped to 0.7×10 -6 -5 ~0.9×10 -5 torr by the vacuum pumping system. Then, argon is used as the working gas, and the throttle valve is used to control the working pressure of the sputtering chamber to 3×10 -3 torr. Silver, copper alloy, or silver alloy is used as the target to vacuum sputter copper, silver, copper alloy, or silver alloy thin film layers; the thickness of the seed layer thin film is 30 - 100 nm, and the resistivity is less than 5×10 -6Ω cm, thus completing the fabrication of the copper electroplating seed layers (2) and (11) on the front and back sides. For the fabrication of the copper electroplating metal wire layers (1) and (12) on the front and back sides, first use a printing press to print an ink mask, and then complete the patterned circuit through the yellow light process of exposure and development. Finally, complete the double-sided electroplated copper metal wire through a horizontal electroplating machine, using an aqueous copper sulfate solution as the electroplating solution, with a current density of 5 - 40 ASD; the thickness of the electroplated copper wire layer is 5 - 20 μm, the width is 10 - 100 μm, and the resistivity is less than 3×10 -6 Ω cm. Thus completing the fabrication of the copper electroplating metal wire layers (1) and (12) on the front and back sides. Completing all the above processes means completing the fabrication of a copper electroplated metallized heterojunction perovskite tandem solar cell.

[0023] Figure 1 As described above, for the finished product prepared by the present invention, a sandwich transparent conductive film layer design is adopted on the front and back sides, taking into account the advantages of reducing interface impedance, improving water vapor resistance, and high transmittance at long wavelengths. The sandwich transparent conductive film layer is fabricated using linear gas plasma sputtering (LGPS). The first layer and the third layer use a transparent conductive oxide material with low doping and high carrier mobility, and the middle layer uses an amorphous transparent conductive oxide with high water vapor resistance; the tandem cell based on HJT perovskite also adopts a buffer layer with high water vapor resistance and high weather resistance, which can prevent water vapor or electroplating solution from penetrating through the film layer into the perovskite light-absorbing layer, causing material cracking and efficiency reduction. The use of a highly conductive copper electroplated metallization process can reduce the grid line width and increase the number of grid lines, which helps to increase the light input and the power collection ability of the grid lines, improve the current and FF, and significantly increase the conversion efficiency. When double-sided glass packaging is used, both sides can absorb light and generate electricity. Due to the significant increase in efficiency, the overall production cost is reduced. Due to the improvement in reliability, the service life is extended, which is conducive to market promotion and product popularization.

[0024] The above shows and describes the basic principles, main features, and advantages of the present invention. For those skilled in the art, it is obvious that the present invention is limited to the details of the above exemplary embodiments, and without departing from the spirit or basic features of the present invention, the present invention can be implemented in other specific forms. Therefore, from any point of view, the embodiments should be regarded as exemplary and non-limiting. The scope of the present invention is defined by the appended claims rather than the above description. Therefore, it is intended to include all changes falling within the meaning and scope of the equivalent elements of the claims in the present invention.

[0025] In addition, it should be understood that although this specification is described in terms of embodiments, each embodiment does not necessarily include only one independent technical solution. This narrative style of the specification is only for clarity. Those skilled in the art should consider the specification as a whole, and the technical solutions in the embodiments can also be appropriately combined to form other embodiments that can be understood by those skilled in the art.

Claims

1. A copper electroplated metallized heterojunction perovskite tandem solar cell, comprising a front copper electroplated metal wire layer, a front copper electroplated seed layer, a front sandwich structure transparent conductive protective film layer, a buffer layer, an electron transport layer, a perovskite absorption layer, a hole transport layer, an interface conductive layer, a heterojunction cell multi-layer film structure layer, a back sandwich structure transparent conductive protective film layer, a back copper electroplated seed layer, and a back copper electroplated metal wire layer; characterized in that, The front copper electroplated metal wire layer, the front copper electroplating seed layer, the front sandwich structure transparent conductive protective film layer, the buffer layer, the electron transport layer, the perovskite absorption layer, the hole transport layer, the interface conductive layer, the heterojunction battery multi-layer film structure layer, the back sandwich structure transparent conductive protective film layer, the back copper electroplating seed layer, and the back copper electroplated metal wire layer are sequentially installed together from top to bottom; the front copper electroplated metal wire layer is a metal circuit, and the material used for the front copper electroplating seed layer is copper; the first and third layers of the front sandwich structure transparent conductive protective film layer are indium tin oxide materials, and the middle layer is indium zinc oxide material; the buffer layer is zinc oxide tin material, and the electron transport layer is a C60 film layer; the hole transport layer is nickel oxide material; the interface conductive layer is indium tin oxide material; the heterojunction battery multi-layer film structure layer is composed of an N-type silicon wafer and a front intrinsic amorphous silicon layer film, a back intrinsic amorphous silicon layer film, a front n-type microcrystalline silicon film, and a back P-type microcrystalline silicon layer film on its upper end face; the first and third layers of the back sandwich structure transparent conductive protective film layer are indium tin oxide materials, and the middle layer is indium zinc oxide material; the material of the back copper electroplating seed layer is copper; the back copper electroplated metal wire layer is a metal circuit.

2. The copper electroplated metallized heterojunction perovskite tandem solar cell according to claim 1, wherein The front copper electroplated metal wire layer has a thickness of 5 - 20 μm, a width of 10 - 100 μm, and a resistivity less than 3×10 -6 Ω·cm; The seed layer for front copper electroplating can also be one of silver, copper alloy, and silver alloy materials, with a thickness of 30 - 100 nm and a resistivity less than 5×10 -6 Ω·cm.

3. A copper electroplated metallized heterojunction perovskite tandem solar cell according to claim 1, wherein, For the first and third layers of the front sandwich-structured transparent conductive protective film layer, one of the materials such as indium tungsten oxide, indium hafnium oxide, indium gallium oxide, indium zirconium oxide, and indium titanium oxide can also be used; for the intermediate layer, indium tin zinc oxide can also be used; the total thickness of the three layers of the front sandwich-structured transparent conductive protective film layer is 80 - 200 nm, the resistivity is less than 5×10 -4 Ω cm, the refractive index is 1.9 - 2.1, and the total light transmittance of the three layers is greater than 90%.

4. A copper electroplated metallized heterojunction perovskite tandem solar cell according to claim 1, characterized in that The buffer layer can also be one of indium tungsten oxide, indium cerium oxide, titanium oxide, aluminum oxide, and tin oxide materials, and its thickness is 10 - 80 nm; the electron transport layer can also be a LiF film layer, and its thickness is 10 - 80 nm.

5. A copper electroplated metallized heterojunction perovskite tandem solar cell according to claim 1, characterized in that, The perovskite absorption layer uses a Cs, FA, and MA co-cation perovskite material, its band gap range is 1.65 - 1.70 eV, and its thickness is 100 - 1000 nm.

6. A copper-plated metallized heterojunction perovskite tandem solar cell according to claim 1, wherein, The hole transport layer can also be made of one of the materials such as nickel magnesium oxide, nickel lithium oxide, nickel copper oxide, copper aluminum oxide, and strontium copper oxide, and its thickness is 15 to 80 nm; the interface conductive layer can also be made of one of the materials such as indium tungsten oxide, indium hafnium oxide, indium gallium oxide, indium zirconium oxide, aluminum zinc oxide, gallium zinc oxide, and indium titanium oxide, and its thickness is 15 - 35 nm, and the resistivity is less than 9×10 -4 Ωcm, and the refractive index is 1.9 - 2.

1.

7. A copper electroplated metallized heterojunction perovskite tandem solar cell according to claim 1, wherein, The thickness of the heterojunction battery multi-layer film structure layer is 50 - 180 μm, the thickness of the front intrinsic amorphous silicon layer film is 5 - 25 nm, the thickness of the back intrinsic amorphous silicon layer film is 5 - 25 nm, the thickness of the front n-type microcrystalline silicon film is 5 - 25 nm, and the thickness of the back P-type microcrystalline silicon layer film is 5 - 25 nm.

8. A copper-plated metallized heterojunction perovskite tandem solar cell according to claim 1, characterized in that, The first layer and the third layer of the back sandwich-structured transparent conductive protective film layer can also be made of one of indium tungsten oxide, indium hafnium oxide, indium gallium oxide, indium zirconium oxide, and indium titanium oxide materials. The intermediate layer can also be made of indium tin zinc oxide. The total thickness of the three layers is 80-200 nm, the resistivity is less than 9×10 -4 Ωcm, the refractive index is 1.9-2.1, and the total light transmittance of the three layers is greater than 90%.

9. A copper electroplated metallized heterojunction perovskite tandem solar cell according to claim 1, wherein, The seed layer for backside copper electroplating can also be one of silver, copper alloy, and silver alloy, with a thickness of 30 - 100 nm and a resistivity less than 5×10 -6 Ω cm.

10. A copper electroplated metallized heterojunction perovskite tandem solar cell according to claim 1, characterized in that, The back copper electroplated metal wire layer is a metal circuit, the thickness of the circuit layer is 5 - 20 um, the width is 10 - 100 um, and the resistivity is less than 3×10 -6 Ωcm.

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