Resin composition

Abstract

Provided is a resin composition which is less susceptible to over-sintering and in which a decrease in glass viscosity when sintered together with a conductive layer (particularly a conductive layer containing Ag) is reduced. The resin composition includes a glass frit, an inorganic filler, an alkali-soluble resin, a photosensitive monomer, and a photopolymerization initiator, and the rate of decrease in complex viscosity of the glass frit when 7 wt% or less of Ag is added to the glass frit is less than 40% at 900 DEG C and less than 60% at 926 DEG C compared to the case where Ag is not added.

Description

Technical Field

[0001] The present disclosure relates to a resin composition. Background Art

[0002] In order to form an insulating layer of an electronic component, an insulator paste containing glass powder is sometimes used as in Patent Document 1.

[0003] Prior Art Documents

[0004] Patent Documents

[0005] Patent Document 1: Japanese Patent Laid-Open No. 11-120823 Summary of the Invention

[0006] When manufacturing an electronic component, an insulating layer formed of a resin composition containing glass powder is sometimes laminated together with a conductive layer and sintered. The present inventors have found that the glass of the insulating layer adjacent to the conductive layer is likely to be over-sintered during sintering, which may cause defects such as voids in the insulating layer near the interface between the insulating layer and the conductive layer.

[0007] The present disclosure has been made in view of the above problems. That is, the present disclosure provides a resin composition capable of producing an insulating layer in which the glass in the insulating layer is not easily over-sintered when the insulating layer and a conductive layer (especially a conductive layer containing Ag) are sintered together.

[0008] The present disclosure provides a resin composition including a frit, an inorganic filler, an alkali-soluble resin, a photosensitive monomer, and a photopolymerization initiator.

[0009] Compared with the case where Ag is not added, the rate of decrease in the complex viscosity of the frit when 7% by weight of Ag is added to the frit is less than 40% at 900°C and less than 60% at 926°C.

[0010] An insulating layer in which the glass in the insulating layer is not easily over-sintered when the insulating layer and a conductive layer (especially a conductive layer containing Ag) are sintered together can be produced from the resin composition of the present disclosure. Brief Description of the Drawings

[0011] Figure 1 A ternary composition diagram of glass showing one embodiment.

[0012] Figure 2 A ternary composition diagram of glass showing one embodiment.

[0013] Figure 3 A cross-sectional schematic view of an Ag-GL co-sintered body.

[0014] Figure 4 A representative diagram of a cross-sectional image of an internal electrode.

[0015] Figure 5 Indicates Figure 4 The binary image of

[0016] Figure 6 Indicates the SEM image of the co-sintered body of the glass having the glass composition of Example 1 and the electrode containing silver.

[0017] Figure 7 Indicates the SEM image of the co-sintered body of the glass having the glass composition of Comparative Example 1 and the electrode containing silver.

[0018] Symbol Explanation

[0019] 1 Glass blank

[0020] 2 Electrode containing Ag

[0021] 3 Ag-GL co-sintered body

[0022] 4 Resin

[0023] 5 Void Detailed Implementation Manner

[0024] The resin composition of the present disclosure will be described in more detail below. Although the description is made with reference to the drawings as needed, various elements in the drawings are schematically and illustratively shown only for understanding the resin composition of the present disclosure, and the appearance and / or dimensional ratio, etc. may be different from the actual object.

[0025] Various numerical ranges mentioned in this specification refer to the numerical values themselves including the lower limit and the upper limit. That is, for example, if a numerical range such as 1 to 10 is taken as an example, it can be interpreted as including the lower limit value "1" and the upper limit value "10".

[0026] <Resin Composition>

[0027] The resin composition of the present disclosure contains frit, inorganic filler, alkali-soluble resin, photosensitive monomer and photoinitiator. Compared with the case where Ag is not added, the decrease rate of the complex viscosity of the frit when 7 wt% of Ag is added to the frit is less than 40% at 900 °C and less than 60% at 926 °C.

[0028] The frit when 7 wt% of Ag is added to the frit refers to the frit obtained by adding 7 wt% of Ag element, that is, metallic silver, relative to the weight of the frit.

[0029] From the resin composition of the present disclosure, an insulating layer in which the glass in the insulating layer is not easily over-sintered when the insulating layer and the conductive layer (especially the conductive layer containing Ag) are sintered together can be produced.

[0030] In the past, metal ions (such as Ag ions) contained in the conductive layer diffused into the glass of the insulating layer adjacent to the conductive layer due to sintering, and thus the viscosity of the glass was liable to decrease. The glass with decreased viscosity is more easily sintered, and as a result, there is a concern that the glass in the insulating layer is over-sintered. Such over-sintering sometimes causes defects such as cracks and voids in the insulating layer. Particularly at the interface between the insulating layer and the conductive layer, the glass of the insulating layer contacts the metal of the conductive layer, so the viscosity of the glass of the insulating layer at the above interface is more easily decreased during sintering and is more easily over-sintered than the glass of the insulating layer outside the above interface.

[0031] The frit contained in the resin composition of the present disclosure has the characteristic of high-temperature rheology when sintered together with the conductive layer. Specifically, the frit of the present disclosure is not liable to have a decrease in complex viscosity even when sintered together with the conductive layer. Particularly, the frit contained in the resin composition of the present disclosure is not liable to have a decrease in complex viscosity even when sintered together with a conductive layer containing Ag. This is because metal ions, particularly Ag ions, from the conductive layer are not easily diffused into the frit softened by sintering.

[0032] In addition, as described above, in the insulating layer made of the resin composition of the present disclosure, metal ions, particularly Ag ions, are not easily diffused, and thus, it is easy to maintain the insulation reliability of the sintered insulating layer. Therefore, electronic components using the resin composition of the present disclosure are easy to maintain the performance and characteristics of, for example, inductors.

[0033] Hereinafter, the frit, inorganic filler, alkali-soluble resin, photosensitive monomer, and photoinitiator contained in the resin composition of the present disclosure will be described.

[0034] [Frit]

[0035] The frit is powdery glass, also referred to as glass powder. The frit softens during sintering of the resin composition and can become a liquid phase.

[0036] (Composition)

[0037] The frit is an inorganic powder mainly composed of oxides. Specifically, the frit contains oxides of at least one element selected from Si, B, Ni, Cu, Pd, Al, Ti, Zr, Zn, Ga, Bi, Pb, Nb, Fe, Co, V, alkali metals, alkaline earth metals, and lanthanide elements.

[0038] In one embodiment, as the frit, it contains at least one selected from SiO2, Al2O3, B2O3, K2O, Li2O, Na2O, CaO, MgO, La2O3, ZnO, TiO2, and ZrO2.

[0039] In one embodiment, the frit of the present disclosure contains SiO2, X2O3 (where X is Al or B), and R2O (where R is an alkali metal element). As a preferred embodiment, the frit of the present disclosure contains SiO2, Al2O3 or B2O3, and K2O or Li2O.

[0040] If the frit contains less X (i.e., Al or B) and more Si, it is easier to reduce the rate of decrease in the complex viscosity of the glass when Ag is added. X and Ag can adopt a tetracoordinate structure. Therefore, for a frit containing more X, Ag is more likely to diffuse into the glass (i.e., the solubility of Ag in the glass is likely to increase). Si and Ag are less likely or unable to adopt a tetracoordinate structure. Therefore, for a frit containing more Si, Ag is less likely to diffuse into the glass.

[0041] In one embodiment, the ratio of the amount of X2O3 contained in the frit to the total amount of SiO2 and X2O3 can be less than 0.200. From the perspective of being less likely to be over-sintered, it can be X2O3 / (SiO2 + X2O3) < 0.200, it can be X2O3 / (SiO2 + X2O3) < 0.180, X2O3 / (SiO2 + X2O3) < 0.160, X2O3 / (SiO2 + X2O3) < 0.150, or X2O3 / (SiO2 + X2O3) < 0.145.

[0042] If the amount of R (i.e., alkali metal) in the frit is adjusted to be within a certain range, it is easier to reduce the rate of decrease in the complex viscosity of the glass when Ag is added. If the amount of R increases, the alkalinity of the glass becomes lower, and Ag is likely to diffuse into the glass. If the amount of R decreases, the complex viscosity of the glass at high temperatures is likely to decrease, and Ag is likely to diffuse into the glass.

[0043] In one embodiment, the ratio of the amount of R2O contained in the frit to the total amount of SiO2 and X2O3 can be greater than 0.008 and less than 0.042. From the perspective of being less likely to be over-sintered, it can be 0.008 < R2O / (SiO2 + X2O3) < 0.042, it can be 0.009 < R2O / (SiO2 + X2O3) < 0.042, 0.010 < R2O / (SiO2 + X2O3) < 0.037, 0.010 < R2O / (SiO2 + X2O3) < 0.031, 0.014 < R2O / (SiO2 + X2O3) < 0.031, or 0.020 < R2O / (SiO2 + X2O3) < 0.031.

[0044] In one embodiment, the weight ratio of SiO2, X2O3, and R2O is Figure 1is selected in the ternary composition diagram shown to be within the region enclosed by point A(65, 35, 0), point B(65, 20, 15), point C(85, 0, 15), and point D(85, 15, 0).

[0045] By selecting the composition of the glass in this way, the softening point of the glass can be in the range of 700°C to 1050°C. Therefore, the reactivity with other materials such as electrode materials is small, and a sintered body can be obtained at a sintering temperature of, for example, 900°C to 1050°C. The insulating property of the electrically insulating layer formed thereby is excellent, and good processability can also be achieved. In addition, the relative dielectric constant of the glass can be made less than 7.0, which is low, and a glass frit suitable for substrates and electronic components having high-frequency circuits can be made.

[0046] In one embodiment, the weight ratio of SiO2, X2O3, and R2O is Figure 2 is selected in the ternary composition diagram shown to be within the region enclosed by point E(75, 24.5, 0.5), point F(75, 22, 3), point G(85, 12, 3), and point H(85, 14.5, 0.5). By selecting the composition of the glass in this way, the softening point of the glass can be in the range of 750°C to 940°C. Therefore, in order to form an electrically insulating layer, it can be calcined at a temperature of 950°C or lower to be sintered. As a result, the processability is further improved, and the reactivity with other materials such as electrode materials can be further reduced.

[0047] In Figure 1 In the ternary composition diagram shown, from the viewpoint of further improving the processability and further reducing the reactivity with other materials such as electrode materials, X2O3 and R2O can be B2O3 and K2O.

[0048] In one embodiment, the glass frit of the present disclosure can be borosilicate glass. The borosilicate glass in the present disclosure is a glass having Si and B as essential elements, and can optionally contain the elements listed above. As the components of the borosilicate glass, the following combinations can be cited, but are not limited to these.

[0049] SiO2 + B2O3 + K2O

[0050] SiO2 + B2O3 + Li2O

[0051] SiO2 + B2O3 + Na2O + K2O + CaO + Al2O3

[0052] SiO2 + B2O3 + Na2O + K2O + Al2O3

[0053] SiO2 + B2O3 + Al2O3 + CaO

[0054] SiO2 + B2O3 + BaO + ZnO + Al2O3 + MgO + La2O3

[0055] SiO2 + B2O3 + CaO + Al2O3 + Na2O + K2O

[0056] In one embodiment, the frit contains SiO2, B2O3, and K2O. This embodiment can further reduce the rate of decrease in the complex viscosity of the frit when 7 wt% of Ag is added to the frit.

[0057] In order to adjust various properties such as acid resistance, water resistance, durability, and heat resistance, in addition to the components listed above, the frit of the present disclosure may further contain components that can form glass. For example, the frit of the present disclosure may contain one or more selected from Li2O, CaO, ZnO, MgO, TiO2, La2O3, and ZrO2.

[0058] (Particle size)

[0059] The average particle size of the frit can be 0.1 μm or more, and can be 0.4 μm or more, 0.7 μm or more, 1.0 μm or more, or 1.3 μm or more.

[0060] The average particle size of the frit can be 5.0 μm or less, and can be 4.5 μm or less, 4.0 μm or less, 3.5 μm or less, or 3.0 μm or less.

[0061] If the particle size of the frit is within the above range, the frit in the resin composition is likely to be uniformly dispersed, and it is easy to improve the smoothness of the surface of the insulating layer formed from the resin composition.

[0062] The average particle size of the frit is the particle size D50 at which the cumulative particle volume reaches 50% of the total particle volume starting from the small particle size side in the particle size distribution obtained by the laser diffraction / scattering method.

[0063] (Complex viscosity at 900 °C)

[0064] - Frit alone

[0065] The complex viscosity of the frit of the present disclosure alone at 900 °C can be 1.0×10 9 mPa·S or more, and from the viewpoint of being less likely to be over-sintered, it can be 1.3×10 9 mPa·S or more, 1.6×10 9 mPa·S or more, 2.0×10 9 mPa·S or more, 2.3×10 9 mPa·S or more, or 3.0×10 9 mPa·S or more.

[0066] The complex viscosity of the frit of the present disclosure alone at 900 °C may be 15.0×10 9 mPa·S or less, and from the viewpoint of being less likely to be over-sintered, it may be 13.0×10 9 mPa·S or less, 11.0×10 9 mPa·S or less, 9.0×10 9 mPa·S or less, or 7.0×10 9 mPa·S or less.

[0067] - Adding 7 wt% of Ag

[0068] When 7 wt% of Ag is added to the frit of the present disclosure, the complex viscosity of the frit at 900 °C may be 1.0×10 9 mPa·S or more, and from the viewpoint of being less likely to be over-sintered, it may be 1.2×10 9 mPa·S or more, 1.6×10 9 mPa·S or more, or 2.5×10 9 mPa·S or more.

[0069] When 7 wt% of Ag is added to the frit of the present disclosure, the complex viscosity of the frit at 900 °C may be 15.0×10 9 mPa·S or less, and from the viewpoint of being less likely to be over-sintered, it may be 13.0×10 9 mPa·S or less, 11.0×10 9 mPa·S or less, 9.0×10 9 mPa·S or less, or 7.0×10 9 mPa·S or less.

[0070] (Complex viscosity at 926 °C)

[0071] - Frit alone

[0072] The complex viscosity of the frit of the present disclosure alone at 926 °C may be 0.76×10 9 mPa·S or more, and from the viewpoint of being less likely to be over-sintered, it may be 1.0×10 9 mPa·S or more, 1.3×10 9 mPa·S or more, 1.6×10 9 mPa·S or more, 2.0×10 9 mPa·S or more, or 3.0×10 9 mPa·S or more.

[0073] The complex viscosity of the frit of the present disclosure alone at 926 °C may be 15.0×10 9Below mPa·S, from the viewpoint of being less likely to be over-sintered, it can be 13.0×10 9 Below mPa·S, 11.0×10 9 Below mPa·S, 9.0×10 9 Below mPa·S or 7.0×10 9 Below mPa·S.

[0074] - Adding 7 wt% of Ag

[0075] When 7 wt% of Ag is added to the frit of the present disclosure, the complex viscosity of the frit at 926 °C can be 0.76×10 9 Above mPa·S, from the viewpoint of being less likely to be over-sintered, it can be 1.0×10 9 Above mPa·S, 1.3×10 9 Above mPa·S, 1.6×10 9 Above mPa·S, 2.0×10 9 Above mPa·S, 3.0×10 9 Above mPa·S.

[0076] When 7 wt% of Ag is added to the frit of the present disclosure, the complex viscosity of the frit at 926 °C can be 15.0×10 9 Below mPa·S, from the viewpoint of being less likely to be over-sintered, it can be 13.0×10 9 Below mPa·S, 11.0×10 9 Below mPa·S or 9.0×10 9 Below mPa·S.

[0077] (The rate of decrease in complex viscosity when adding Ag)

[0078] Compared with the complex viscosity of the frit without adding Ag at high temperature, the complex viscosity of the frit with added Ag (in other words, the complex viscosity with added Ag) decreases, however, the degree of decrease of the frit of the present disclosure is small. Specifically, compared with the case without adding Ag, the rate of decrease in the complex viscosity of the frit when 7 wt% of Ag is added to the frit of the present disclosure is small.

[0079] It should be noted that the frit without adding Ag is not limited to the case where the frit completely does not contain Ag, that is, the case of 0 wt%, but also includes the case where Ag is substantially not contained.

[0080] The frit substantially not containing Ag can contain 0.01 wt% or less, 0.001 wt% or 0.0001 wt% or less of Ag relative to the frit.

[0081] – The rate of decrease at 900 °C

[0082] Compared with the case where Ag is not added, the decrease rate of the complex viscosity of the frit when 7 wt% of Ag is added to the frit of the present disclosure can be less than 40% at 900 °C, and from the viewpoint of being less likely to be over-sintered, it can be less than 35%, less than 30%, or less than 25%.

[0083] – The decrease rate at 926 °C

[0084] Compared with the case where Ag is not added, the decrease rate of the complex viscosity of the frit when 7 wt% of Ag is added to the frit of the present disclosure can be less than 60% at 926 °C, and from the viewpoint of being less likely to be over-sintered, it can be less than 50%, less than 40%, less than 30%, or less than 25%.

[0085] The decrease rates of the complex viscosity of the frit when Ag is added at 900 °C and 926 °C can be obtained by the following formula.

[0086] "The decrease rate of the complex viscosity of the frit when Ag is added = 100 - the complex viscosity of the frit when Ag is added / the complex viscosity of the frit alone × 100"

[0087] It should be noted that the complex viscosities at 900 °C and 926 °C described above are not limited to the complex viscosities exactly at 900 °C and 926 °C, and also include the complex viscosities at temperatures where the complex viscosities can be substantially judged to be at 900 °C and 926 °C. For example, such temperatures can be in the range of 900 °C ± 1 °C and 926 °C ± 1 °C, or can be in the range of 900 °C ± 2 °C and 926 °C ± 2 °C.

[0088] (Method for measuring complex viscosity)

[0089] The complex viscosity of the frit of the present disclosure can be measured by a high-temperature rheometer. By pressing the frit with a press or the like to produce a pressed powder body and measuring the pressed powder body with a high-temperature rheometer, the complex viscosity of the frit can be obtained. Specifically, the complex viscosity can be measured under the conditions described in Tables 1 and 2 below.

[0090] [Table 1]

[0091] - Pressed powder body production conditions

[0092]

[0093] [Table 2]

[0094] - High-temperature rheometer measurement conditions

[0095]

[0096] Glass frit in which 7 wt % of Ag is added can be prepared as follows.

[0097] As starting materials, SiO2, B2O3 and K2CO3 are prepared respectively, and they are mixed into a glass composition having a desired weight composition ratio, and each obtained mixture is melted at a temperature of 1700° C. to produce molten glass. Then, each molten glass is quenched with a cooling roll and crushed to produce glass powder.

[0098] Ag powder is weighed in a predetermined ratio in the glass frit powder, and the mixture is stirred and mixed with a spatula for about 1 minute. The obtained mixture is compacted by the compact forming method disclosed in the present application to obtain a compact.

[0099] Ag powder may have a particle size of, for example, D50 = 2.0 μm to 5.0 μm. Ag powder may be obtained by a known method, such as atomized Ag powder. Ag powder having a particle size other than the above may also be used, such as Ag powder obtained by a wet reduction method.

[0100] (Softening point)

[0101] The softening point of the glass frit of the present disclosure may be below the melting point of Ag. The Ag refers to a single substance of metal Ag, and the melting point of Ag is 961°C. The softening point of the glass frit of the present disclosure may be below 950°C, below 930°C, below 900°C, below 860°C, or below 820°C. The softening point of the glass frit of the present disclosure may be above 650°C, above 700°C, above 730°C, above 760°C, or above 780°C.

[0102] The softening point of the glass frit can be obtained by thermogravimetric differential thermal analysis (TG-DTA). In the thermogravimetric differential thermal analysis, 30 mg of glass frit having a median particle size (D50) of 0.1 μm to 5.0 μm is used, and a platinum plate is used as a container for the glass frit. Using α-alumina as a reference, the temperature is raised from room temperature to 950°C at 10°C / min in an atmospheric atmosphere to obtain a DTA graph. From the low temperature side of the DTA graph, the lower hem of the second endothermic peak (the fourth inflection point) is taken as the glass softening point.

[0103] (content)

[0104] With respect to the resin composition, the content of the frit may be 10% by weight or more, 15% by weight or more, 20% by weight or more, 25% by weight or more, 30% by weight or more, or 35% by weight or more. With respect to the resin composition, the content of the frit may be 70% by weight or less, 60% by weight or less, 55% by weight or less, 50% by weight or less, 45% by weight or less, 40% by weight or less, or 35% by weight or less. In one embodiment, from the viewpoint of being less likely to be over-sintered, with respect to the resin composition, the content of the frit may be 20% to 50% by weight, preferably 30% to 50% by weight.

[0105] [Inorganic filler]

[0106] The inorganic filler refers to a substance that does not melt when the resin composition is sintered. The inorganic filler is an inorganic filler other than the frit. The type of the inorganic filler is not particularly limited, and known substances can be used. For example, metal oxides, silicate compounds, nitrides, carbides, minerals, etc. can be used as the inorganic filler.

[0107] In one embodiment, the resin composition may contain at least one inorganic filler such as Mg2SiO4 (forsterite), CaSiO3 (wollastonite), ZrO2 (zirconia), Al2O3 (aluminum oxide), CeO (cerium oxide), TiO2 (titanium oxide), Fe2O3 (ferrite), SiO2 (quartz), CoAl2O4 (cobalt aluminate), and perovskite-type oxides with the general formula ABO3. From the viewpoint of suppressing cracks, the inorganic filler may be Al2O3 (aluminum oxide) and / or SiO2 (quartz). The names in parentheses refer to compounds or minerals composed of the inorganic filler or containing the inorganic filler as the main component.

[0108] For the perovskite-type oxide with the general formula ABO3, an oxide in which the constituent element at the A site in the formula contains at least one selected from Ag, K, La, Sr, Ca, and Ba, and the constituent element at the B site contains at least one selected from Nb, Ca, Co, Ti, Zr, and Fe can be used.

[0109] As the combination of inorganic fillers, it can be appropriately selected according to the use of the resin composition of the present disclosure. For example, in view of the type, structure, and performance of the electronic component, the inorganic fillers can be appropriately combined and included in the resin composition. As the combination of inorganic fillers, for example, the following can be cited:

[0110] Mg2SiO4 + Al2O3 + SiO2 + ZrO2

[0111] CaSiO3 + Al2O3 + SiO2 + ZrO2

[0112] Mg2SiO4 + Al2O3 ++ SiO2

[0113] ABO3 + Fe2O3

[0114] Al2O3 + SiO2

[0115] Al2O3 + SiO2 + CeO

[0116] Al2O3 + SiO2 + CoAl2O4 + TiO2。

[0117] (Content)

[0118] With respect to the resin composition, the content of the inorganic filler may be 1% by weight or more, 3% by weight or more, 5% by weight or more, 10% by weight or more, 15% by weight or more, or 20% by weight or more. With respect to the resin composition, the content of the inorganic filler may be 40% by weight or less, 35% by weight or less, 30% by weight or less, 25% by weight or less, or 20% by weight or less. In one embodiment, from the viewpoint of being less likely to be over-sintered, with respect to the resin composition, the content of the inorganic filler may be 1% to 35% by weight, preferably 15% to 25% by weight.

[0119] [Alkali-soluble resin]

[0120] As the alkali-soluble resin, for example, resins such as acrylic copolymers having functional groups such as carboxyl groups in the side chain can be used. Specifically, copolymers of unsaturated carboxylic acids and ethylenically unsaturated compounds other than unsaturated carboxylic acids can be cited. The resin composition of the present disclosure may contain one or two or more alkali-soluble resins.

[0121] As the ethylenically unsaturated compounds of unsaturated carboxylic acids, acrylic acid, methacrylic acid, maleic acid, fumaric acid, vinyl acetic acid, and their acid anhydrides can be cited. In addition, as the ethylenically unsaturated compounds other than unsaturated carboxylic acids, for example, unsaturated carboxylic acid esters can be cited. Specifically, acrylic esters such as methyl acrylate and ethyl acrylate, methacrylic esters such as methyl methacrylate and ethyl methacrylate, and fumaric acid esters such as monoethyl fumarate can be cited.

[0122] It should be noted that as the acrylic copolymer having a carboxyl group in the side chain, a substance having an unsaturated bond introduced therein in the form described below can be used.

[0123] (1) Add an acrylic monomer having a functional group such as an epoxy group that can react with the carboxyl group in the side chain of the acrylic copolymer.

[0124] (2) After reacting the above acrylic copolymer in which an epoxy group is introduced instead of the carboxyl group in the side chain with an unsaturated monocarboxylic acid, further introduce a saturated or unsaturated polycarboxylic anhydride.

[0125] Furthermore, as an acrylic copolymer having a carboxyl group in the side chain, it is preferably an acrylic copolymer having a weight average molecular weight (Mw) of 50,000 or less and an acid value of 30 mgKOH / g to 150 mgKOH / g.

[0126] (Content)

[0127] With respect to the resin composition, the content of the alkali-soluble resin may be 5% by weight or more, 10% by weight or more, 15% by weight or more, 20% by weight or more, or 25% by weight or more. With respect to the resin composition, the content of the alkali-soluble resin may be 50% by weight or less, 45% by weight or less, 40% by weight or less, 35% by weight or less, 30% by weight or less, or 25% by weight or less. In one embodiment, from the viewpoint of being less likely to be over-sintered, with respect to the resin composition, the content of the alkali-soluble resin may be 15% by weight to 45% by weight, preferably 25% by weight to 35% by weight.

[0128] [Photosensitive monomer]

[0129] As the photosensitive monomer, a compound having an ethylenically unsaturated double bond can be used.

[0130] As the photosensitive monomer, monofunctional and polyfunctional compounds having a vinyl group, an allyl group, an acrylate group, a methacrylate group, or an acrylamide group can be used. The resin composition of the present disclosure may contain one or more photosensitive monomers.

[0131] In addition to dipentaerythritol monohydroxypentaacrylate, the photosensitive monomer may also be used, such as hexanediol triacrylate, tripropylene glycol triacrylate, trimethylolpropane triacrylate, EO-modified trimethylolpropane triacrylate, stearyl acrylate, tetrahydrofurfuryl acrylate, lauryl acrylate, 2-phenoxyethyl acrylate, isodecyl acrylate, isooctyl acrylate, tridecyl acrylate, caprolactone acrylate, ethoxylated nonylphenol acrylate, 1,3-butanediol diacrylate, 1,4-butanediol diacrylate, diethylene glycol diacrylate, tetraethylene glycol diacrylate, triethylene glycol diacrylate, ethoxylated bisphenol A diacrylate, propoxylated neopentyl glycol diacrylate, tris(2-hydroxyethyl) isocyanurate triacrylate, pentaerythritol triacrylate, propoxylated trimethylolpropane triacrylate, propoxylated glycerol triacrylate, pentaerythritol tetraacrylate, bis(trimethylolpropane) tetraacrylate, ethoxylated pentaerythritol tetraacrylate, etc. In addition, substances in which part or all of the acrylate in the molecule of the above compounds are changed to methacrylate can be used.

[0132] (Content)

[0133] The content of the photosensitive monomer may be 1% by weight or more, 3% by weight or more, 5% by weight or more, or 10% by weight or more relative to the resin composition. The content of the photosensitive monomer may be 30% by weight or less, 25% by weight or less, 20% by weight or less, 15% by weight or less, 10% by weight or less, or 5% by weight or less relative to the resin composition. In one mode, from the viewpoint of being less likely to be over-sintered, the content of the photosensitive monomer relative to the resin composition may be 1% by weight to 25% by weight, preferably 10% by weight to 15% by weight.

[0134] [Photoinitiator]

[0135] The photoinitiator is a component that decomposes upon irradiation with light energy such as ultraviolet rays to generate active species such as free radicals and / or cations, and initiates the polymerization reaction of monomers. The photoinitiator is not particularly limited, and one kind can be appropriately used alone from conventionally known substances according to the type of monomer, etc., or two or more kinds can be used in combination.

[0136] As the photoinitiator, 2-methyl-1-[4-(methylthio)phenyl]-2-morpholinopropane is used. In addition, benzil, benzil ethyl ether, benzil isobutyl ether, benzil isopropyl ether, benzophenone, benzoylbenzoic acid, methyl benzoylbenzoate, 4-benzoyl-4'-methyldiphenyl sulfide, benzil dimethyl ketal, 2-n-butoxy-4-dimethylaminobenzoate, 2-chlorothioxanthone, 2,4-diethylthioxanthone, 2,4-diisopropylthioxanthone, isopropylthioxanthone, ethyl 2-dimethylaminobenzoate, ethyl p-dimethylaminobenzoate, isoamyl p-dimethylaminobenzoate, 3,3'-dimethyl-4-methoxybenzophenone, 2,4-dimethylthiotioxanthone, 1-(4-dodecylphenyl)-2-hydroxy-2-methylpropan-1-one, 2,2-dimethoxy-1,2-diphenylethane-1-one, hydroxycyclohexyl phenyl ketone, 2-hydroxy-2-methyl-1-phenylpropan-1-one, 1-[4-(2-hydroxyethoxy)phenyl]-2-hydroxy-2-methyl-1-propan-1-one, methyl benzoylformate, 1-phenyl-1,2-propanedione-2-(o-ethoxycarbonyl)oxime, 2-benzyl-2-dimethylamino-1-(4-morpholinophenyl)-1-butanone, bis(2,6-dimethoxybenzoyl)-2,4,4-trimethylpentyl phosphine oxide, bis(2,4,6-trimethylbenzoyl)phenyl phosphine oxide, etc. can also be used.

[0137] (Content)

[0138] With respect to the resin composition, the content of the photoinitiator can be 0.1% by weight or more, 0.5% by weight or more, 1% by weight or more, 3% by weight or more, 5% by weight or more, or 10% by weight or more. With respect to the resin composition, the content of the photoinitiator can be 20% by weight or less, 15% by weight or less, 10% by weight or less, 5% by weight or less, or 3% by weight or less. In one embodiment, from the perspective of being less likely to be over-sintered, with respect to the resin composition, the content of the photoinitiator can be 0.1% to 10% by weight, preferably 1% to 3% by weight.

[0139] <Resin composition paste>

[0140] The resin composition paste of the present disclosure contains the resin composition of the present disclosure, a solvent, a dispersant, and / or a plasticizer. The resin composition paste of the present disclosure may contain both a dispersant and a plasticizer. The resin composition paste of the present disclosure may also contain either a dispersant or a plasticizer.

[0141] The resin composition contained in the resin composition paste of the present disclosure is as described above.

[0142] [Solvent]

[0143] The resin composition paste of the present disclosure may contain a solvent. The solvent is not particularly limited, and known solvents can be used. The solvent can be an organic solvent. For example, it can be butyl carbitol acetate, butyl carbitol, ethyl carbitol acetate, ethyl carbitol, hexane, toluene, ethyl cellosolve, cyclohexanone, butyl cellosolve, butyl cellosolve acetate, diethylene glycol diethyl ether, diacetone alcohol, terpineol, methyl ethyl ketone, benzyl alcohol, methyl ethyl ketone, methyl isobutyl ketone, tetradecane, tetrahydronaphthalene, propanol, isopropanol, dihydroterpineol, dihydroterpineol acetate, ethyl carbitol, 2,2,4-trimethyl-1,3-pentanediol monoisobutyrate (TEXANOL), 1-(2-methoxy-2-methylethoxy)-2-propanol, dipropylene glycol monomethyl ether, or a combination thereof.

[0144] (Content)

[0145] The content of the solvent can be appropriately selected in view of the dispersion degree of the resin composition in the resin composition paste and the viscosity of the resin composition paste. For example, with respect to the resin composition paste, the content of the solvent can be 50% by weight or more, 60% by weight or more, 70% by weight or more, or 80% by weight or more. With respect to the resin composition, the content of the solvent can be 90% by weight or less, 80% by weight or less, 70% by weight or less, or 60% by weight or less.

[0146] [Dispersant]

[0147] The paste of the resin composition of the present disclosure may contain a dispersant. The dispersant is included to disperse at least the frit in the paste of the resin composition. The dispersant is not particularly limited as long as it can disperse the frit in the paste of the resin composition, and one type or a mixture of two or more types can be used.

[0148] As the dispersant, a nonionic dispersant, an anionic dispersant, a cationic dispersant, etc. can be used.

[0149] As the nonionic dispersant, ethyl cellulose, nitrocellulose, polyvinyl acetate, polyoxyethylene alkyl ether, polyoxyethylene polyoxypropylene alkyl ether, polyoxyethylene polyoxybutylene alkyl ether, polyoxyethylene polyoxypropylene glycol, polyethyleneimine ethoxylate, etc. can be used.

[0150] As the anionic dispersant, alkyl ether sulfate, alkyl sulfate, alkenyl ether sulfate, alkenyl sulfate, olefin sulfonate, alkane sulfonate, saturated or unsaturated fatty acid salt, alkyl or alkenyl ether carboxylate, α-sulfone fatty acid salt, N-acyl amino acid type dispersant, phosphoric acid mono- or diester type dispersant, and sulfosuccinate, etc. can be used.

[0151] As the cationic dispersant, amine salt type dispersants such as alkylamine salt, amino alcohol fatty acid derivative, polyamine fatty acid derivative, imidazoline, etc.; alkyltrimethylammonium salt, dialkyldimethylammonium salt, alkyldimethylbenzylammonium salt, pyridine salt, alkylisoquinoline salt, etc.

[0152] (Content)

[0153] Relative to the paste of the resin composition, the content of the dispersant can be 0.01 wt% or more, 0.05 wt% or more, 0.1 wt% or more, or 0.3 wt% or more. Relative to the paste of the resin composition, the content of the dispersant can be 15 wt% or less, 10 wt% or less, 5 wt% or less, 1 wt% or less, 0.5 wt% or less. In one mode, from the viewpoint of not being easily over-sintered, relative to the resin composition, the content of the dispersant can include 0.1 wt% to 10 wt%, preferably include 0.1 wt% to 0.5 wt%.

[0154] When the dispersant is an anionic dispersant, the content of the anionic dispersant can be in a range such that its total acid amount becomes 10% to 150% of the total base amount of the frit. Regarding the content of the anionic dispersant, if its total acid amount is less than 10% of the total base amount of the glass powder, the sufficient dispersion effect cannot be exerted. In addition, even if more than 150% is added, no significant improvement in the dispersion effect is confirmed. It should be noted that the total acid amount of the anionic dispersant and the total base amount of the frit can be quantified by methods such as titration.

[0155] [Plasticizer]

[0156] The resin composition paste of the present disclosure may contain a plasticizer. The plasticizer is included to adjust the rheological properties of the resin composition paste. The type of the plasticizer is not particularly limited, and known plasticizers can be used. One type of plasticizer can be used or two or more types can be mixed and used.

[0157] As the plasticizer, diol derivatives, phthalic acid derivatives, isophthalic acid derivatives, tetrahydrophthalic acid derivatives, adipic acid derivatives, maleic acid derivatives, fumaric acid derivatives, trimellitic acid derivatives, pyromellitic acid derivatives, stearic acid derivatives, oleic acid derivatives, itaconic acid derivatives, ricinoleic acid derivatives, etc. can be used.

[0158] (In the form of containing an organic carrier)

[0159] In one embodiment, the resin composition paste of the present disclosure contains the resin composition of the present disclosure, an organic carrier, a dispersant, and / or a plasticizer.

[0160] [Organic carrier]

[0161] The organic carrier contains a solvent and an organic binder.

[0162] As the solvent contained in the organic carrier, the solvents exemplified above can be used.

[0163] As the organic binder contained in the organic carrier, as cellulose ester compounds, cellulose acetate, cellulose acetate butyrate, etc. can be exemplified, as cellulose ether compounds, ethyl cellulose, methyl cellulose, hydroxypropyl cellulose, hydroxyethyl cellulose, hydroxypropyl methyl cellulose, hydroxyethyl methyl cellulose, etc. can be exemplified, as acrylic compounds, polyacrylamide, polymethacrylate, polymethyl methacrylate, polyethyl methacrylate, etc. can be exemplified, as vinyl-based compounds, polyvinyl butyral, polyvinyl acetate, polyvinyl alcohol, etc. can be exemplified. At least one of the above organic binders can be selected and used.

[0164] Relative to the total content of the organic binder and the solvent, the content of the organic binder in the organic carrier can be 5% by weight or more, 10% by weight or more, or 15% by weight or more.

[0165] Relative to the total content of the organic binder and the solvent, the content of the organic binder in the organic carrier can be 30% by weight or less, 25% by weight or less, or 20% by weight or less.

[0166] With respect to the resin composition paste, the content of the organic carrier may be 1% by weight or more, 3% by weight or more, 5% by weight or more, or 10% by weight or more. With respect to the resin composition paste, the content of the organic carrier may be 20% by weight or less, 15% by weight or less, 10% by weight or less, or 5% by weight or less.

[0167] [Other Components]

[0168] Within the range that does not impair the effects of the resin composition of the present disclosure, the resin composition of the present disclosure may further contain other components as needed in addition to the above components. As other components, defoamers, sensitizers, surfactants, antioxidants, polymerization inhibitors, leveling agents, thickeners, anti-gelling agents, stabilizers, preservatives, pigments, rheology modifiers, etc. may be included. With respect to the resin composition, the other components may be included in an amount of 5% by weight or less, 3% by weight or less, or 1% by weight or less.

[0169] <Green Sheet>

[0170] By molding the resin composition of the present disclosure or the resin composition paste of the present disclosure into a sheet shape, a green sheet can be obtained.

[0171] Since the green sheet of the present disclosure contains the resin composition of the present disclosure, when sintered together with a conductive layer (especially a conductive layer containing Ag), the decrease in the viscosity of the glass is reduced, and it is not easily over-sintered.

[0172] The green sheet of the present disclosure can be manufactured as follows.

[0173] First, the resin composition, dispersant, plasticizer, and solvent are compounded in the following ratios.

[0174] (a) Resin composition: 50 parts by weight to 200 parts by weight

[0175] (b) Dispersant: 1 part by weight to 4 parts by weight

[0176] (d) Plasticizer: 0.5 part by weight to 3.0 parts by weight

[0177] (e) Solvent: 100 parts by weight to 300 parts by weight

[0178] Next, 300 parts by weight to 700 parts by weight of zirconia balls with a diameter of 1 mm to 5 mm are added to the compounded raw materials, and mixed and pulverized with a ball mill for 3 hours to 7 hours to obtain a final dispersion slurry for manufacturing a green sheet. It should be noted that the slurry prepared in advance by compounding the resin composition paste of the present disclosure according to the above-mentioned ratio can be directly used as the final dispersion slurry.

[0179] Next, the final dispersion slurry is supplied onto a substrate such as a carrier sheet, and formed into a sheet shape by a doctor blade method to produce a green sheet.

[0180] The green sheet of the present disclosure can be appropriately adjusted according to its use, for example, it can be 0.1 μm to 10 μm.

[0181] The green sheet of the present disclosure can be used for various electronic components. For example, the green sheet of the present disclosure can be used for inductor components, capacitor components, etc. For example, by laminating green sheets provided with internal electrodes, pressing them, and performing heat treatment to sinter them, inductors, capacitors, etc. can be manufactured.

[0182] Specifically, by disposing an internal electrode for capacitance formation on the green sheet manufactured as described above, an electrode-disposed sheet is formed. Next, a specified number of electrode-disposed sheets are laminated, and green sheets without electrodes (outer layer sheets) are further laminated on both upper and lower sides thereof and pressed, thereby forming a laminate (laminated and pressed body) in which one end side of each internal electrode is alternately led out to different side end faces.

[0183] Then, after sintering the laminated and pressed body under specified conditions, conductive paste is applied to both end portions of the sintered laminate (element) and fired to form external electrodes that are electrically connected to the internal electrodes. Thus, a multilayer electronic component is obtained. In addition, other multilayer electronic components such as multilayer substrates can also be manufactured through the process of laminating green sheets.

[0184] <Electronic Component>

[0185] The resin composition of the present disclosure or the resin composition paste of the present disclosure can be used for electronic components. As such electronic components, for example, electronic components including an insulating layer and a conductive layer containing the resin composition of the present disclosure can be cited. Examples of electronic components include inductor components, capacitor components, LC filter components, etc.

[0186] For electronic components, electronic components obtained by a lamination method in which a plurality of insulating layers printed with conductor patterns are laminated and interlayer connection is performed using vias, electronic components obtained by a film formation method in which a conductor pattern is printed on an insulating layer by sputtering, evaporation, etc., and electronic components obtained by a lithography method in which formation of an insulating layer and formation of a conductive layer are repeatedly performed by adopting processes such as lithography can be cited.

[0187] Hereinafter, a manufacturing method of an inductor component according to an embodiment will be described.

[0188] (Manufacturing Method of Inductor Component)

[0189] An insulating paste containing quartz as a filler and containing the resin composition of the present disclosure is applied by screen printing, and this operation is repeated to form an insulating layer. This insulating layer is an outer layer insulating layer located on one outer side in the axial direction of the coil.

[0190] A photosensitive conductive paste layer is formed by coating, and a coil conductor layer and an external electrode conductor layer are formed through a photolithography process. Specifically, a photosensitive conductive paste with Ag as the main metal component is coated by screen printing to form a photosensitive conductive paste layer. Further, ultraviolet rays or the like are irradiated onto the photosensitive conductive paste layer through a photomask, and development is performed using an alkaline solution or the like.

[0191] Thereby, a coil conductor layer and an external electrode conductor layer are formed on the insulating layer. At this time, a desired coil pattern can be drawn on the photomask.

[0192] An insulating layer provided with openings and through holes is formed through a photolithography process. Specifically, a photosensitive insulating paste is coated by screen printing to form it on the insulating layer. Further, ultraviolet rays or the like are irradiated onto the photosensitive insulating layer through a photomask, and development is performed using an alkaline solution or the like.

[0193] A coil conductor layer and an external electrode conductor layer are formed through a photolithography process. Specifically, a photosensitive conductive paste with Ag as the main metal component is coated by screen printing to form a photosensitive conductive paste layer. Further, ultraviolet rays or the like are irradiated onto the photosensitive conductive paste layer through a photomask, and development is performed using an alkaline solution or the like. Thereby, a conductor layer connecting between the external electrode conductor layers is formed within the opening, a via conductor is formed within the through hole, and a coil conductor layer is formed on the insulating layer and within the opening.

[0194] By repeatedly performing the above processes, a coil conductor layer and an external electrode conductor layer are formed on and inside the insulating layer.

[0195] The operation of coating the insulating paste by screen printing is repeatedly performed to form an insulating layer. This insulating layer is an outer insulating layer located on the other outer side in the axial direction of the coil.

[0196] The mother laminate is obtained through the above processes.

[0197] The mother laminate is cut into a plurality of uncalcined laminates by cutting or the like. In the cutting process of the mother laminate, the external electrode is exposed from the laminate on the cutting surface formed by cutting.

[0198] The uncalcined laminate is calcined under specified conditions to obtain a laminate. The laminate is subjected to roller processing. Ni plating with a thickness of 2 μm to 10 μm and Sn plating with a thickness of 2 μm to 10 μm are performed on the part where the external electrode is exposed from the laminate. Through the above processes, an inductor component with dimensions of 0.4 mm × 0.2 mm × 0.2 mm is completed.

[0199] It should be noted that the method for forming the conductor pattern is not limited to the above method. For example, it can be a method of laminating a conductor paste using a screen printing plate with an opening in the shape of the conductor pattern, or a method of forming a pattern on a conductor film formed by sputtering, evaporation, crimping of a foil, etc. by etching. It can also be a method such as the semi-additive method of forming a negative pattern and forming a conductor pattern by coating, and then removing unnecessary parts. Furthermore, by forming a conductor pattern in multiple stages to form a high aspect ratio, losses due to resistance at high frequencies can be reduced. More specifically, it can be a process of repeatedly forming the above conductor pattern; it can be a process of repeatedly overlapping wirings formed by the semi-additive process; it can also be a process of forming a part of the lamination by the semi-additive process, and in addition, forming a film for plating growth by etching; it can also be a process of combining to grow the wirings formed by the semi-additive process further by plating to form a high aspect ratio.

[0200] In addition, the conductor material is not limited to the Ag paste described above, and any conductor material that is a good conductor such as Ag, Cu, Au formed by sputtering, evaporation, crimping of a foil, plating, etc. is acceptable.

[0201] In addition, the method for forming the insulating layer, the opening, and the via hole is not limited to the above method, and it can also be a method of opening by laser or drilling after crimping, spin coating, or spraying of an insulating material sheet.

[0202] In addition, the insulating material is not limited to the glass and ceramic materials described above, and it can also be an organic material such as an epoxy resin, a fluororesin, or a polymer resin, or a composite material such as a glass epoxy resin. An insulating material with a small dielectric constant and dielectric loss is preferred.

[0203] In addition, the size of the inductor component is not limited to the above size.

[0204] In addition, for the method of forming the external electrode, it is not limited to the method of performing plating processing on the external conductor exposed by cutting, and it can also be a method of further forming an external electrode by impregnation with a conductor paste or sputtering method, etc. after cutting, and then performing plating processing thereon.

[0205] (Surface roughness)

[0206] In the electronic component of the present disclosure, when the insulating layer using the resin composition of the present disclosure is sintered together with the conductive layer, it is not easily over-sintered. For example, since the interface between the insulating layer and the conductive layer is not easily over-sintered, bubbles, etc. are not easily generated. Therefore, the unevenness on the surface of the insulating layer and / or the conductive layer at this interface is likely to become smaller, and the surface roughness is likely to become smaller. If the surface roughness of the insulating layer and / or the conductive layer at the interface is small, it is easy to maintain the characteristics and reliability of the electronic component. For example, in an inductor component, the resistance loss at high frequencies is reduced, and the Q value is easily increased.

[0207] In one embodiment, at the interface between the insulating layer and the conductive layer, the surface roughness Rq of the conductive layer may be 1.0 μm or less, and may be 0.8 μm or less, 0.6 μm or less, or 0.4 μm or less.

[0208] The surface roughness Rq (refer to JIS B0601: 2013 for details) of the conductive layer at the interface between the insulating layer and the conductive layer can be measured as follows.

[0209] (1) Obtain an internal electrode cross-sectional image from the DPA cross-section of the electronic component (shown as a representative diagram in Figure 4 ). When using a laser microscope, a confocal microscope, an SEM, etc. to obtain the image, an appropriate image can be obtained.

[0210] (2) Use image processing software to binarize the obtained image with the internal electrode part as white and the insulator part as black (shown as a representative diagram in Figure 5 ). The image processing software is, for example, WinRoof (manufactured by Mitani Corporation), imageJ (manufactured by Wayne Rasband), and is not limited to this as long as it can perform binarization.

[0211] (3) Based on the binarized image, calculate Rq according to the following formula for the interface between the internal electrode and the insulator part. Rq represents the root mean square of Z(x) of the reference length l.

[0212]

[0213] The resin composition of the present disclosure has been described above, but this is merely an illustration of typical examples. Therefore, it is easy for those skilled in the art to understand that the resin composition of the present disclosure is not limited to these and various modifications can be considered.

[0214] Examples

[0215] The examples of the present disclosure will be specifically described below, but the examples do not limit the present disclosure.

[0216] <Examples and Comparative Examples>

[0217] As the glass composition, Examples 1 to 5 and Comparative Example 1 having the compositions of SiO2, B2O3, and K2O shown in Table 5 were prepared. The compositions shown in Table 5 were confirmed by XRF.

[0218] In Examples 1 to 5 and Comparative Example 1, Examples 1 (Ag added) to 5 (Ag added) and Comparative Example 1 (Ag added) with 7 wt% silver added were prepared.

[0219] <Test Method>

[0220] The steps of the test are as follows.

[0221] [Measurement of High Temperature Rheological Properties]

[0222] In order to measure the complex viscosity of the examples, comparative examples, examples (with Ag added), and comparative examples (with Ag added) using a high-temperature rheometer, pressed powder bodies were made from the frit materials shown in the examples and comparative examples under the conditions of Table 3 below.

[0223] [Table 3]

[0224]

[0225] The made pressed powder bodies were set in a high-temperature rheometer, and the measurement of the complex viscosity was carried out under the conditions of Table 4 below. The measurement results of the complex viscosity are shown in Table 5.

[0226] [Table 4]

[0227]

[0228] [Rate of Decrease in Complex Viscosity Based on Addition of 7 wt% Ag]

[0229] The rate of decrease in complex viscosity based on the addition of 7 wt% Ag is calculated by the following formula.

[0230] "Rate of decrease in complex viscosity of the frit when Ag is added = 100 - (Complex viscosity of the frit when Ag is added / Complex viscosity of the frit alone) × 100"

[0231] The examples and comparative examples are judged as follows according to the rate of decrease in complex viscosity based on the addition of 7 wt% Ag.

[0232] Among the rates of decrease at 901 °C and 926 °C, the one with the larger rate of decrease:

[0233] Less than 30%; ◎ (Best)

[0234] 30% or more and less than 40%; 〇 (Good)

[0235] 40% or more and less than 80%; △ (Acceptable) (No problem in practice)

[0236] 80% or more; × (Unacceptable) (Problem in practice)

[0237] [Softening Point]

[0238] The softening points of the examples, comparative examples, examples (with Ag added), and comparative examples (with Ag added) were measured by DTA under the following conditions. The measurement results of the softening points are shown in Table 5.

[0239] Use 30 mg of frit having a median particle size (D50) of 0.1 μm to 5.0 μm, and use a platinum dish as the container for the frit. Using α-aluminum oxide as a reference, in an atmospheric atmosphere, heat from room temperature to 950 °C at a rate of 10 °C / min to obtain a DTA chart. When observing from the low-temperature side of this DTA chart, take the lower swing part (the fourth inflection point) of the second endothermic peak as the glass softening point.

[0240] [SEM Observation]

[0241] Sinter the frit having the compositions described in Example 1 and Comparative Example 1 together with an Ag-containing electrode to produce an Ag-GL co-sintered body (refer to Figure 5 ). Embed this co-sintered body in resin and polish it, and perform SEM observation on the Ag-GL interface of the resulting cross-section. Shown in Figure 6 and Figure 7 .

[0242] [Table 5]

[0243]

[0244] Addition of Ag: Add 7 wt% of Ag to GL alone

[0245] As can be seen from Table 5, the reduction rate of the complex viscosity of the frit based on the addition of 7 wt% of Ag in Examples 1 to 5 is less than that in Comparative Example 1.

[0246] The resin composition of the present disclosure and its manufacturing method are as follows.

[0247] <Item 1>

[0248] A resin composition comprising a frit, an inorganic filler, an alkali-soluble resin, a photosensitive monomer, and a photopolymerization initiator,

[0249] Compared with the case of not adding Ag, when adding 7 wt% or less of Ag to the above frit, the reduction rate of the complex viscosity of the above frit is less than 40% at 900 °C and less than 60% at 926 °C.

[0250] <Item 2>

[0251] The resin composition according to Item 1, wherein, compared with the case of not adding Ag, the reduction rate of the complex viscosity when adding 7 wt% or less of Ag is less than 30% at 900 °C and less than 30% at 926 °C.

[0252] <Item 3>

[0253] The resin composition according to Item 1 or 2, wherein the average particle size of the above frit is 0.1 μm to 5.0 μm.

[0254] <Item 4>

[0255] The resin composition according to any one of Items 1 to 3, wherein the frit contains SiO2, X2O3 (X is Al or B), and R2O (R is an alkali metal element).

[0256] <Item 5>

[0257] The resin composition according to Item 4, wherein the ratio of the amount of X2O3 to the total amount of SiO2 and X2O3 is X2O3 / (SiO2 + X2O3) < 0.200.

[0258] <Item 6>

[0259] The resin composition according to Item 4, wherein the ratio of the amount of R2O to the total amount of SiO2 and X2O3 is 0.008 < R2O / (SiO2 + X2O3) < 0.042.

[0260] <Item 7>

[0261] The resin composition according to any one of Items 1 to 6, wherein the inorganic filler contains at least one selected from Mg2SiO4, CaSiO3, ZrO2, Al2O3, CeO, TiO2, Fe2O3, SiO2, CoAl2O4, and perovskite-type oxides represented by the general formula: ABO3 [wherein the constituent element of the A site contains at least one selected from Ag, K, La, Sr, Ca, and Ba, and the constituent element of the B site contains at least one selected from Nb, Ca, Co, Ti, Zr, and Fe].[[]END]]

[0262] <Item 8>

[0263] A resin composition paste containing the resin composition according to any one of Items 1 to 7, a solvent, a dispersant, and / or a plasticizer.

[0264] <Item 9>

[0265] The resin composition paste according to Item 8, wherein the dispersant is an anionic dispersant.

[0266] <Item 10>

[0267] A green sheet obtained by shaping the resin composition according to any one of Items 1 to 7 into a sheet form.

[0268] <Item 11>

[0269] An electronic component including an insulating layer and a conductive layer, wherein the insulating layer contains the resin composition according to any one of Items 1 to 7, and the conductive layer contains Ag.

[0270] <Item 12>

[0271] The electronic component according to item 11, wherein at the interface between the insulating layer and the conductive layer, the surface roughness Rq of the conductive layer is 1.0 μm or less.

[0272] <Item 13>

[0273] A method for manufacturing an electronic component, comprising: a step of laminating an insulating layer containing the resin composition according to any one of items 1 to 7 and a conductive layer containing Ag to form a laminate, and

[0274] a step of heat-treating the laminate.

[0275] <Item 14>

[0276] The manufacturing method according to item 13, wherein the conductive layer is laminated on the insulating layer by photolithography.

Claims

1. A resin composition comprising a frit, an inorganic filler, an alkali-soluble resin, a photosensitive monomer, and a photopolymerization initiator, When compared with the case of not adding Ag, the rate of decrease in the complex viscosity of the frit when adding 7 wt% or less of Ag to the frit is less than 40% at 900 °C and less than 60% at 926 °C.

2. The resin composition according to claim 1, wherein, When compared with the case of not adding Ag, the rate of decrease in the complex viscosity when adding 7 wt% or less of Ag is less than 30% at 900 °C and less than 30% at 926 °C.

3. The resin composition according to claim 1, wherein, The average particle size of the frit is 0.1 μm to 5.0 μm.

4. The resin composition according to claim 1, wherein, The frit contains SiO2, X2O3, and R2O, where X is Al or B, and R is an alkali metal element.

5. The resin composition according to claim 4, wherein, The ratio of the amount of X2O3 to the total amount of SiO2 and X2O3 is X2O3 / (SiO2 + X2O3) < 0.

200.

6. The resin composition according to claim 4, wherein, The ratio of the amount of R2O to the total amount of SiO2 and X2O3 is 0.008 < R2O / (SiO2 + X2O3) < 0.

042.

7. The resin composition according to claim 1, wherein, The inorganic filler contains at least one or more selected from Mg2SiO4, CaSiO3, ZrO2, Al2O3, CeO, TiO2, Fe2O3, SiO2, CoAl2O4, and perovskite-type oxides represented by the general formula: ABO3. In the general formula: ABO3, the constituent element at the A site contains at least one selected from Ag, K, La, Sr, Ca, and Ba, and the constituent element at the B site contains at least one selected from Nb, Ca, Co, Ti, Zr, and Fe.

8. A resin composition paste comprising the resin composition according to claim 1, a solvent, and a dispersant and / or a plasticizer.

9. The resin composition paste according to claim 8, wherein, The dispersant is an anionic dispersant.

10. A green sheet obtained by molding the resin composition according to claim 1 into a sheet shape.

11. An electronic component comprising an insulating layer and a conductive layer, wherein the insulating layer contains the resin composition according to claim 1, and the conductive layer contains Ag.

12. The electronic component according to claim 11, wherein, At the interface between the insulating layer and the conductive layer, the surface roughness Rq of the conductive layer is 1.0 μm or less.

13. A method for manufacturing an electronic component, comprising: A step of laminating an insulating layer containing the resin composition according to claim 1 and a conductive layer containing Ag to form a laminate, and A step of performing heat treatment on the laminate.

14. The manufacturing method according to claim 13, wherein, The conductive layer is laminated on the insulating layer by photolithography.

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