Infrared spectrum sensing system based on microfluid thermal trigger module

Abstract

The invention discloses an infrared spectrum sensing system based on a microfluid thermal trigger module, and relates to a spectrum sensing system. The problems that an existing sensor is high in standby power consumption and short in service life are solved. The device comprises a substrate layer, a metal reflecting layer and a metal dielectric layer, the substrate layer comprises four pairs of electrodes and four micro-fluid thermal triggering structures, each pair of electrodes is composed of two comb-shaped electrodes and two metal plates, each micro-fluid thermal triggering structure comprises two liquid storage tanks, two micro-channels and a middle connecting electrode, and the liquid storage tanks are filled with kerosene and conductive liquid; the metal reflection layer comprises a first metal reflection film, a second metal reflection film, a third metal reflection film and a fourth metal reflection film in the middle and four pairs of metal electrodes on the periphery, and each pair of metal electrodes is composed of two metal plates; the surface of the metal dielectric layer comprises a first surface metal absorption array, a second surface metal absorption array, a third surface metal absorption array, a fourth surface metal absorption array and four pairs of metal electrodes around the first surface metal absorption array, the second surface metal absorption array, the third surface metal absorption array, the fourth surface metal absorption array and the four pairs of metal electrodes, and each pair of metal electrodes is composed of two metal plates.

Description

Technical Field

[0001] The present invention relates to a spectral sensing system, belonging to the technical field of infrared sensing. Background Art

[0002] With the large-scale application of Internet of Things technology in fields such as industrial Internet, smart agriculture, and ecological monitoring, the deployment density of intelligent sensing terminals continues to climb. However, its significant continuous power consumption problem has become the core bottleneck restricting long-term stable operation. Especially in low-frequency and high-risk scenarios such as forest fires and gas leaks, traditional infrared spectral sensors waste a large amount of electrical energy in the "no-event" state due to the need for continuous operation or high-frequency sampling, resulting in short battery life, high maintenance costs, and large volume and poor environmental adaptability, making it difficult to meet the requirements of long-term field deployment. Therefore, it is necessary to design an infrared spectral sensing system that can achieve extremely low-power standby of the detector when there is no event, and only start high-precision analysis when detecting the target infrared spectral characteristics, while integrating the advantages of anti-interference, multi-band detection, and low-cost deployment to promote the further development of infrared sensing technology in sustainable Internet of Things applications. Summary of the Invention

[0003] In order to solve the problems of high standby power consumption and short service life of existing sensors, the present invention further provides an infrared spectral sensing system based on a microfluidic thermal trigger module.

[0004] The technical solution adopted by the present invention to solve the above problems is: the sensing system of the present invention includes a metal dielectric layer, a metal reflection layer, and a substrate layer;

[0005] Further, a first surface metal absorption array, a second surface metal absorption array, a third surface metal absorption array, a fourth surface metal absorption array, a first upper absorption positive electrode, a first upper absorption negative electrode, a second upper absorption positive electrode, a second upper absorption negative electrode, a third upper absorption positive electrode, a third upper absorption negative electrode, a fourth upper absorption positive electrode, and a fourth upper absorption negative electrode are provided on the metal dielectric layer;

[0006] Further, the first upper absorption positive electrode and the first upper absorption negative electrode are respectively provided on the upper left side and the upper right side of the first surface metal absorption array, the second upper absorption positive electrode and the second upper absorption negative electrode are respectively provided on the upper left side and the upper right side of the second surface metal absorption array, the third upper absorption positive electrode and the third upper absorption negative electrode are respectively provided on the lower left side and the lower right side of the third surface metal absorption array, and the fourth upper absorption positive electrode and the fourth upper absorption negative electrode are respectively provided on the lower left side and the lower right side of the fourth surface metal absorption array.

[0007] Further, a first metal reflection thin film, a second metal reflection thin film, a third metal reflection thin film, a fourth metal reflection thin film, a first middle layer absorption positive electrode, a first middle layer absorption negative electrode, a second middle layer absorption positive electrode, a second middle layer absorption negative electrode, a third middle layer absorption positive electrode, a third middle layer absorption negative electrode, a fourth middle layer absorption positive electrode, and a fourth middle layer absorption negative electrode are provided on the metal reflection layer.

[0008] Further, the first metal reflection thin film is provided directly below the first surface metal absorption array, the second metal reflection thin film is provided directly below the second surface metal absorption array, the third metal reflection thin film is provided directly below the third surface metal absorption array, and the fourth metal reflection thin film is provided directly below the fourth surface metal absorption array;

[0009] Further, the first middle layer absorption positive electrode and the first middle layer absorption negative electrode are respectively provided on the upper left side and the upper right side of the first metal reflection thin film, the second middle layer absorption positive electrode and the second middle layer absorption negative electrode are respectively provided on the upper left side and the upper right side of the second metal reflection thin film, the third middle layer absorption positive electrode and the third middle layer absorption negative electrode are respectively provided on the lower left side and the lower right side of the third metal reflection thin film, and the fourth middle layer absorption positive electrode and the fourth middle layer absorption negative electrode are respectively provided on the lower left side and the lower right side of the fourth metal reflection thin film.

[0010] Further, a first liquid storage tank, a second liquid storage tank, a third liquid storage tank, a fourth liquid storage tank, a fifth liquid storage tank, a sixth liquid storage tank, a seventh liquid storage tank, an eighth liquid storage tank, a first microchannel, a second microchannel, a third microchannel, a fourth microchannel, a fifth microchannel, a sixth microchannel, a seventh microchannel, an eighth microchannel, a first lower layer absorption positive electrode, a first lower layer absorption negative electrode, a second lower layer absorption positive electrode, a second lower layer absorption negative electrode, a third lower layer absorption positive electrode, a third lower layer absorption negative electrode, a fourth lower layer absorption positive electrode, a fourth lower layer absorption negative electrode, a first comb-shaped electrode, a second comb-shaped electrode, a third comb-shaped electrode, a fourth comb-shaped electrode, a fifth comb-shaped electrode, a sixth comb-shaped electrode, a seventh comb-shaped electrode, an eighth comb-shaped electrode, a first connection electrode, and a second connection electrode, a third connection electrode, and a fourth connection electrode are provided on the substrate layer.

[0011] Further, the first liquid storage tank, the second liquid storage tank, the third liquid storage tank, and the fourth liquid storage tank are arranged side by side in the upper half of the substrate layer, and the fifth liquid storage tank, the sixth liquid storage tank, the seventh liquid storage tank, and the eighth liquid storage tank are arranged side by side in the lower half of the substrate layer;

[0012] Further, the first microchannel is disposed above and connected to the first liquid storage tank, the second microchannel is disposed above and connected to the second liquid storage tank, the third microchannel is disposed above and connected to the third liquid storage tank, the fourth microchannel is disposed above and connected to the fourth liquid storage tank, the fifth microchannel is disposed below and connected to the fifth liquid storage tank, the sixth microchannel is disposed below and connected to the sixth liquid storage tank, the seventh microchannel is disposed below and connected to the seventh liquid storage tank, and the eighth microchannel is disposed below and connected to the eighth liquid storage tank;

[0013] Further, the first lower absorption positive electrode is disposed on the left side of the first microchannel and connected thereto through the first comb-shaped electrode, the first connection electrode connects the first microchannel and the second microchannel, the first lower absorption negative electrode is disposed on the right side of the second microchannel and connected thereto through the second comb-shaped electrode, the second lower absorption positive electrode is disposed on the left side of the third microchannel and connected thereto through the third comb-shaped electrode, the second connection electrode connects the third microchannel and the fourth microchannel, the second lower absorption negative electrode is disposed on the right side of the fourth microchannel and connected thereto through the fourth comb-shaped electrode, the third lower absorption positive electrode is disposed on the left side of the sixth microchannel and connected thereto through the sixth comb-shaped electrode, the third connection electrode connects the fifth microchannel and the sixth microchannel, the third lower absorption negative electrode is disposed on the right side of the fifth microchannel and connected thereto through the fifth comb-shaped electrode, the fourth lower absorption positive electrode is disposed on the left side of the eighth microchannel and connected thereto through the eighth comb-shaped electrode, the fourth connection electrode connects the seventh microchannel and the eighth microchannel, and the fourth lower absorption negative electrode is disposed on the right side of the seventh microchannel and connected thereto through the seventh comb-shaped electrode;

[0014] Further, an appropriate amount of kerosene is pumped into the first liquid storage tank, and the kerosene liquid level in the microchannel remains at a high level. An appropriate amount of slightly less kerosene is pumped into the second liquid storage tank, and the kerosene liquid level in the microchannel remains at a low level. An appropriate amount of slightly less kerosene is pumped into the third liquid storage tank, and the kerosene liquid level in the microchannel remains at a low level. An appropriate amount of kerosene is pumped into the fourth liquid storage tank, and the kerosene liquid level in the microchannel remains at a high level. An appropriate amount of kerosene is pumped into the fifth liquid storage tank, and the kerosene liquid level in the microchannel remains at a high level. An appropriate amount of slightly less kerosene is pumped into the sixth liquid storage tank, and the kerosene liquid level in the microchannel remains at a low level. An appropriate amount of slightly less kerosene is pumped into the seventh liquid storage tank, and the kerosene liquid level in the microchannel remains at a low level. An appropriate amount of kerosene is pumped into the eighth liquid storage tank, and the kerosene liquid level in the microchannel remains at a high level;

[0015] Further, the first microchannel is filled with a conductive liquid such as ferric chloride solution, the second microchannel is filled with a conductive liquid such as ferric chloride solution, the third microchannel is filled with a conductive liquid such as ferric chloride solution, the fourth microchannel is filled with a conductive liquid such as ferric chloride solution, the fifth microchannel is filled with a conductive liquid such as ferric chloride solution, the sixth microchannel is filled with a conductive liquid such as ferric chloride solution, the seventh microchannel is filled with a conductive liquid such as ferric chloride solution, and the eighth microchannel is filled with a conductive liquid such as ferric chloride solution.

[0016] The beneficial effects of the present invention are as follows:

[0017] 1. The metal-dielectric-metal (MIM) structure and the microfluidic thermal trigger structure adopted by the present invention are compatible with the MEMS manufacturing process. At the same time, the use of complex optical devices in traditional spectral sensing devices is reduced, the process difficulty is lowered, which is conducive to large-scale manufacturing and production;

[0018] 2. By precisely designing and adjusting the metal absorption array and the microfluidic thermal trigger module, the present invention effectively improves the spectral response rate and accuracy, and realizes infrared detection and sensing of multiple specific wavelengths and a larger spectral range;

[0019] 3. The microfluidic thermal trigger structure of the present invention has a certain environmental anti-interference ability and self-holding ability, is not easily triggered by stray signals, and can slowly close within a certain period of time after being triggered, so as to have enough time for the system to perform a series of processes such as information acquisition, processing, exchange, and execution;

[0020] 4. Compared with the prior art, the infrared sensor based on the microfluidic thermal trigger structure adopted by the present invention can maintain near-zero power consumption in the standby mode, can significantly reduce the overall energy demand of the system and extend the service life, meeting the requirements of large-scale long-term deployment in the wild. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 is a schematic structural diagram of the infrared spectral sensor of the present invention;

[0022] Figure 2 is a schematic structural diagram of the metal dielectric layer and the surface metal array;

[0023] Figure 3 is a schematic structural diagram of the metal reflection layer;

[0024] Figure 4 is a schematic structural diagram of the substrate layer and the microfluidic thermal trigger module;

[0025] Figure 5 is a block diagram of the infrared spectral sensing system of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0026] DETAILED DESCRIPTION OF THE INVENTION I: As Figure 1 shown, an infrared spectral sensing system based on a microfluidic thermal trigger module, which is characterized by including a metal dielectric layer 1, a metal reflection layer 2, and a substrate layer 3;

[0027] On the first surface of the metal dielectric layer 1, the first surface metal absorption array 1-9, the second surface metal absorption array 1-10, the third surface metal absorption array 1-11, and the fourth surface metal absorption array 1-12 are arranged side by side in pairs and sequentially from top to bottom; the first surface metal absorption array 1-9 is arranged at a position near the center in the upper left quadrant of the metal dielectric layer 1, the second surface metal absorption array 1-10 is arranged at a position near the center in the upper right quadrant of the metal dielectric layer 1, the third surface metal absorption array 1-11 is arranged at a position near the center in the lower right quadrant of the metal dielectric layer 1, and the fourth surface metal absorption array 1-12 is arranged at a position near the center in the lower left quadrant of the metal dielectric layer 1.

[0028] Among them, the first surface metal absorption array 1-9, the second surface metal absorption array 1-10, the third surface metal absorption array 1-11, and the fourth surface metal absorption array 1-12 have an absorption characteristic of more than 90% for infrared light in a specific narrow band.

[0029] Specific implementation method two: As Figure 2 shown, on the basis of the first specific implementation method, a first upper layer absorption positive electrode 1-1, a first upper layer absorption negative electrode 1-2, a second upper layer absorption positive electrode 1-3, a second upper layer absorption negative electrode 1-4, a third upper layer absorption positive electrode 1-6, a third upper layer absorption negative electrode 1-5, a fourth upper layer absorption positive electrode 1-8, and a fourth upper layer absorption negative electrode 1-7 are provided on the metal dielectric layer 1;

[0030] The first upper layer absorption positive electrode 1-1 and the first upper layer absorption negative electrode 1-2 are respectively arranged on the upper left side and the upper right side of the first surface metal absorption array 1-9, the second upper layer absorption positive electrode 1-3 and the second upper layer absorption negative electrode 1-4 are respectively arranged on the upper left side and the upper right side of the second surface metal absorption array 1-10, the third upper layer absorption positive electrode 1-6 and the third upper layer absorption negative electrode 1-5 are respectively arranged on the lower left side and the lower right side of the third surface metal absorption array 1-11, and the fourth upper layer absorption positive electrode 1-8 and the fourth upper layer absorption negative electrode 1-7 are respectively arranged on the lower left side and the lower right side of the fourth surface metal absorption array 1-12.

[0031] Specific implementation method three: As Figure 3 shown, on the basis of the first specific implementation method, a first metal reflection thin film 2-9, a second metal reflection thin film 2-10, a third metal reflection thin film 2-11, a fourth metal reflection thin film 2-12, a first middle layer absorption positive electrode 2-1, a first middle layer absorption negative electrode 2-2, a second middle layer absorption positive electrode 2-3, a second middle layer absorption negative electrode 2-4, a third middle layer absorption positive electrode 2-6, a third middle layer absorption negative electrode 2-5, a fourth middle layer absorption positive electrode 2-8, and a fourth middle layer absorption negative electrode 2-7 are provided on the metal reflection layer 2.

[0032] The first metal reflective film 2-9, the second metal reflective film 2-10, the third metal reflective film 2-11, and the fourth metal reflective film 2-12 are arranged side by side in pairs and arranged in sequence from top to bottom. The first metal reflective film 2-9 corresponds to the position of the first surface metal absorption array 1-9, the second metal reflective film 2-10 corresponds to the position of the second surface metal absorption array 1-10, the third metal reflective film 2-11 corresponds to the position of the third surface metal absorption array 1-11, and the fourth metal reflective film 2-12 corresponds to the position of the fourth surface metal absorption array 1-12;

[0033] The first middle-layer absorption positive electrode 2-1 and the first middle-layer absorption negative electrode 2-2 are respectively arranged on the upper left side and the upper right side of the first metal reflective film 2-9. The second middle-layer absorption positive electrode 2-3 and the second middle-layer absorption negative electrode 2-4 are respectively arranged on the upper left side and the upper right side of the second metal reflective film 2-10. The third middle-layer absorption positive electrode 2-6 and the third middle-layer absorption negative electrode 2-5 are respectively arranged on the lower left side and the lower right side of the third metal reflective film 2-11. The fourth middle-layer absorption positive electrode 2-8 and the fourth middle-layer absorption negative electrode 2-7 are respectively arranged on the lower left side and the lower right side of the fourth metal reflective film 2-12.

[0034] Specific Embodiment 4: As Figure 4 shown, on the basis of Specific Embodiment 1, a first liquid storage tank 3-21, a second liquid storage tank 3-22, a third liquid storage tank 3-26, a fourth liquid storage tank 3-25, a fifth liquid storage tank 3-28, a sixth liquid storage tank 3-27, a seventh liquid storage tank 3-23, an eighth liquid storage tank 3-24, a first microchannel 3-29, a second microchannel 3-30, a third microchannel 3-31, a fourth microchannel 3-32, a fifth microchannel 3-33, a sixth microchannel 3-34, a seventh microchannel 3-35, an eighth microchannel 3-36, a first lower-layer absorption positive electrode 3-1, a first lower-layer absorption negative electrode 3-2, a second lower-layer absorption positive electrode 3-3, a second lower-layer absorption negative electrode 3-4, a third lower-layer absorption positive electrode 3-6, a third lower-layer absorption negative electrode 3-5, a fourth lower-layer absorption positive electrode 3-8, a fourth lower-layer absorption negative electrode 3-7, a first comb-shaped electrode 3-13, a second comb-shaped electrode 3-14, a third comb-shaped electrode 3-15, a fourth comb-shaped electrode 3-16, a fifth comb-shaped electrode 3-17, a sixth comb-shaped electrode 3-18, a seventh comb-shaped electrode 3-19, an eighth comb-shaped electrode 3-20, a first connection electrode 3-9, a second connection electrode 3-10, a third connection electrode 3-11, and a fourth connection electrode 3-12 are provided on the substrate layer 3;

[0035] The first liquid storage tank 3-21, the second liquid storage tank 3-22, the third liquid storage tank 3-26, and the fourth liquid storage tank 3-25 are arranged side by side in the upper half of the substrate layer. The fifth liquid storage tank 3-28, the sixth liquid storage tank 3-27, the seventh liquid storage tank 3-23, and the eighth liquid storage tank 3-24 are arranged side by side in the lower half of the substrate layer. The second liquid storage tank 3-22 corresponds to the position where the first surface metal absorption array 1-9 is located. The third liquid storage tank 3-26 corresponds to the position where the second surface metal absorption array 1-10 is located. The sixth liquid storage tank 3-27 corresponds to the position where the third surface metal absorption array 1-11 is located. The seventh liquid storage tank 3-23 corresponds to the position where the fourth surface metal absorption array 1-12 is located. Among them, only the liquid storage tanks corresponding to the surface metal absorption arrays are affected by the heat generated by the operation of the absorption arrays.

[0036] The first microchannel 3-29 is arranged above and connected to the first liquid storage tank 3-21. The second microchannel 3-30 is arranged above and connected to the second liquid storage tank 3-22. The third microchannel 3-31 is arranged above and connected to the third liquid storage tank 3-26. The fourth microchannel 3-32 is arranged above and connected to the fourth liquid storage tank 3-25. The fifth microchannel 3-33 is arranged below and connected to the fifth liquid storage tank 3-28. The sixth microchannel 3-34 is arranged below and connected to the sixth liquid storage tank 3-27. The seventh microchannel 3-35 is arranged below and connected to the seventh liquid storage tank 3-23. The eighth microchannel 3-36 is arranged below and connected to the eighth liquid storage tank 3-24. Among them, the diameter of the microchannel should be in the micron level to achieve the stability of the two-phase flow in the channel.

[0037] The first lower-layer absorption positive electrode 3-1 is arranged on the left side of the first microchannel 3-29 and is connected thereto through the first comb-shaped electrode 3-13. The first connection electrode 3-9 connects the first microchannel 3-29 and the second microchannel 3-30. The first lower-layer absorption negative electrode 3-2 is arranged on the right side of the second microchannel 3-30 and is connected thereto through the second comb-shaped electrode 3-14. The second lower-layer absorption positive electrode 3-3 is arranged on the left side of the third microchannel 3-31 and is connected thereto through the third comb-shaped electrode 3-15. The second connection electrode 3-10 connects the third microchannel 3-31 and the fourth microchannel 3-32. The second lower-layer absorption negative electrode 3-4 is arranged on the right side of the fourth microchannel 3-32 and is connected thereto through the fourth comb-shaped electrode 3-16. The third lower-layer absorption positive electrode 3-6 is arranged on the left side of the sixth microchannel 3-34 and is connected thereto through the sixth comb-shaped electrode 3-18. The third connection electrode 3-11 connects the fifth microchannel 3-33 and the sixth microchannel 3-34. The third lower-layer absorption negative electrode 3-5 is arranged on the right side of the fifth microchannel 3-33 and is connected thereto through the fifth comb-shaped electrode 3-17. The fourth lower-layer absorption positive electrode 3-8 is arranged on the left side of the eighth microchannel 3-36 and is connected thereto through the eighth comb-shaped electrode 3-20. The fourth connection electrode 3-12 connects the seventh microchannel 3-35 and the eighth microchannel 3-36. The fourth lower-layer absorption negative electrode 3-7 is arranged on the right side of the seventh microchannel 3-35 and is connected thereto through the seventh comb-shaped electrode 3-19;

[0038] An appropriate amount of kerosene is pumped into the first liquid storage tank 3-21, and the kerosene liquid level in the first microchannel 3-29 remains at a high level. An appropriate amount of slightly less kerosene is pumped into the second liquid storage tank 3-22, and the kerosene liquid level in the second microchannel 3-30 remains at a low level. An appropriate amount of slightly less kerosene is pumped into the third liquid storage tank 3-26, and the kerosene liquid level in the third microchannel 3-31 remains at a low level. An appropriate amount of kerosene is pumped into the fourth liquid storage tank 3-25, and the kerosene liquid level in the fourth microchannel 3-32 remains at a high level. An appropriate amount of kerosene is pumped into the fifth liquid storage tank 3-28, and the kerosene liquid level in the fifth microchannel 3-33 remains at a high level. An appropriate amount of slightly less kerosene is pumped into the sixth liquid storage tank 3-27, and the kerosene liquid level in the sixth microchannel 3-34 remains at a low level. An appropriate amount of slightly less kerosene is pumped into the seventh liquid storage tank 3-23, and the kerosene liquid level in the seventh microchannel 3-35 remains at a low level. An appropriate amount of kerosene is pumped into the eighth liquid storage tank 3-24, and the kerosene liquid level in the eighth microchannel 3-36 remains at a high level; wherein, the liquid filled in the liquid storage tank should be an insulating oily liquid with a small specific heat capacity and low thermal conductivity, such as kerosene, etc. Temperature changes can easily cause its expansion / contraction, thereby affecting the liquid level height in the microchannel.

[0039] The first microchannel 3-29 is filled with a conductive liquid such as ferric chloride solution, the second microchannel 3-30 is filled with a conductive liquid such as ferric chloride solution, the third microchannel 3-31 is filled with a conductive liquid such as ferric chloride solution, the fourth microchannel 3-32 is filled with a conductive liquid such as ferric chloride solution, the fifth microchannel 3-33 is filled with a conductive liquid such as ferric chloride solution, the sixth microchannel 3-34 is filled with a conductive liquid such as ferric chloride solution, the seventh microchannel 3-35 is filled with a conductive liquid such as ferric chloride solution, and the eighth microchannel 3-36 is filled with a conductive liquid such as ferric chloride solution. Among them, the conductive liquid should be a conductive aqueous liquid, such as ferric chloride solution, which does not mix with kerosene during the expansion or contraction process.

[0040] Specific Embodiment 5: As Figure 1 shown, on the basis of Specific Embodiment 1, the first upper absorption positive electrode 1-1 of the metal dielectric layer 1 is connected to the first middle absorption positive electrode 2-1 of the metal reflection layer 2 and the first lower absorption positive electrode 3-1 of the substrate layer 3. The first upper absorption negative electrode 1-2 is connected to the first middle absorption negative electrode 2-2 and the first lower absorption negative electrode 3-2. The second upper absorption positive electrode 1-3 is connected to the second middle absorption positive electrode 2-3 and the second lower absorption positive electrode 3-3. The second upper absorption negative electrode 1-4 is connected to the second middle absorption negative electrode 2-4 and the second lower absorption negative electrode 3-4. The third upper absorption positive electrode 1-6 is connected to the third middle absorption positive electrode 2-6 and the third lower absorption positive electrode 3-6. The third upper absorption negative electrode 1-5 is connected to the third middle absorption negative electrode 2-5 and the third lower absorption negative electrode 3-5. The fourth upper absorption positive electrode 1-8 is connected to the fourth middle absorption positive electrode 2-8 and the fourth lower absorption positive electrode 3-8. The fourth upper absorption negative electrode 1-7 is connected to the fourth middle absorption negative electrode 2-7 and the fourth lower absorption negative electrode 3-7.

[0041] Working Principle

[0042] The first surface metal absorption array 1-9, the second surface metal absorption array 1-10, the third surface metal absorption array 1-11, and the fourth surface metal absorption array 1-12 have different signal sensitivities to signals in different spectral bands. When receiving energy signals in a specific band, the surface metal absorption array absorbs them and converts the spectral energy into heat. The heat is transferred to the substrate layer through the metal reflection layer. When the microfluidic thermal trigger module on the substrate layer is heated, the kerosene in the liquid storage tank closer to the center expands due to heat, causing the liquid level of the conductive liquid in the microchannel to rise until it is flush with the liquid level of the conductive liquid in the microchannel on the side farther from the center. The connection of the electrodes causes a change in the electrical signal, realizing the detection and sensing functions for a specific spectral band.

[0043] Taking the first surface metal absorption array 1-9 as an example, during operation, a voltage is applied to the first upper absorption positive electrode 1-1 and the first upper absorption negative electrode 1-2, thereby generating a constant electrical signal output between the first comb-shaped electrode 3-13 and the second comb-shaped electrode 3-14. When the first surface metal absorption array detects the appearance of an infrared signal in the target band, it absorbs the signal and converts the spectral energy into heat, which further causes the microfluidic thermal trigger module to heat up. The kerosene in the second liquid storage tank 3-22 expands due to heat, causing the liquid level of the conductive liquid in the second microchannel 3-30 to rise until it is flush with the liquid level of the conductive liquid in the first microchannel 3-29. The connection of the electrodes causes a change in the electrical signal, realizing the sensing function for a specific infrared spectral band.

[0044] The described infrared spectral sensing system is provided with a total of four metal absorption arrays corresponding to different target bands and independent microfluidic thermal trigger modules. Each metal absorption array can collect spectral information in a specific band. After using heat to activate the microfluidic thermal trigger module, signal acquisition is carried out. After further data processing, the detection and sensing functions of the infrared spectrum can be realized.

[0045] The working principle of the infrared spectral sensing system based on the microfluidic thermal trigger module is as follows: The metal absorption array of the infrared detection module absorbs and converts the infrared spectral response signal into heat. When the heat is transferred to the microfluidic thermal trigger module, the kerosene in the liquid storage tank closer to the center expands due to heat, causing the liquid level of the conductive liquid in the microchannel to rise until it is flush with the liquid level of the conductive liquid in the other microchannel. After the connection of the electrodes causes a change in the electrical signal, the current signal acquisition and quantization module is used to detect the current changes in different bands and convert the analog signal into a digital signal through analog-to-digital conversion, realizing the digital monitoring and analysis of the current. After further processing by the data module, spectral information for the target infrared spectral band is obtained, realizing the infrared spectral sensing function based on the microfluidic thermal trigger module.

[0046] Taking the four metal absorption arrays for different bands and independent microfluidic thermal trigger modules of the infrared spectral sensing system as an example, in practice, multiple absorption arrays can be added and the series-parallel relationship between the microfluidic thermal trigger modules can be changed to realize the detection and sensing functions for more complex infrared spectra.

[0047] The above are only the preferred embodiments of the present invention, and do not impose any form of limitation on the present invention. Although the present invention has been disclosed above with the preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art, without departing from the scope of the technical solution of the present invention, may make some changes or modifications to the above-disclosed technical content to obtain equivalent embodiments with equivalent changes. However, as long as it does not depart from the content of the technical solution of the present invention, any simple modification, equivalent replacement, and improvement made to the above embodiments within the spirit and principle of the present invention still fall within the protection scope of the technical solution of the present invention.

Claims

1. An infrared spectroscopy sensing system based on a microfluidic thermal trigger module, characterized by including Metal dielectric layer (1), metal reflection layer (2), and substrate layer (3); On the upper surface of the metal dielectric layer (1), there are a first surface metal absorption array (1-9), a second surface metal absorption array (1-10), a third surface metal absorption array (1-11), and a fourth surface metal absorption array (1-12); The first surface metal absorption array (1-9), the second surface metal absorption array (1-10), the third surface metal absorption array (1-11), and the fourth surface metal absorption array (1-12) are arranged side by side in pairs and are sequentially arranged from top to bottom at a position near the center of the surface of the metal dielectric layer (1).

2. The infrared spectroscopic sensing system based on a microfluidic thermal trigger module according to claim 1, wherein On the metal dielectric layer (1), there are a first upper absorption positive electrode (1-1), a first upper absorption negative electrode (1-2), a second upper absorption positive electrode (1-3), a second upper absorption negative electrode (1-4), a third upper absorption negative electrode (1-5), a third upper absorption positive electrode (1-6), a fourth upper absorption negative electrode (1-7), and a fourth upper absorption positive electrode (1-8); The first upper absorption positive electrode (1-1) and the first upper absorption negative electrode (1-2) are respectively arranged on the upper left side and the upper right side of the first surface metal absorption array (1-9), the second upper absorption positive electrode (1-3) and the second upper absorption negative electrode (1-4) are respectively arranged on the upper left side and the upper right side of the second surface metal absorption array (1-10), the third upper absorption positive electrode (1-6) and the third upper absorption negative electrode (1-5) are respectively arranged on the lower left side and the lower right side of the third surface metal absorption array (1-11), and the fourth upper absorption positive electrode (1-8) and the fourth upper absorption negative electrode (1-7) are respectively arranged on the lower left side and the lower right side of the fourth surface metal absorption array (1-12).

3. The infrared spectroscopy sensing system based on a microfluidic thermal trigger module according to claim 1, wherein On the metal reflection layer (2), there are a first metal reflection thin film (2-9), a second metal reflection thin film (2-10), a third metal reflection thin film (2-11), a fourth metal reflection thin film (2-12), a first middle layer absorption positive electrode (2-1), a first middle layer absorption negative electrode (2-2), a second middle layer absorption positive electrode (2-3), a second middle layer absorption negative electrode (2-4), a third middle layer absorption positive electrode (2-6), a third middle layer absorption negative electrode (2-5), a fourth middle layer absorption positive electrode (2-8), and a fourth middle layer absorption negative electrode (2-7); The first metal reflection thin film (2-9) corresponds to the position where the first surface metal absorption array (1-9) is located, the second metal reflection thin film (2-10) corresponds to the position where the second surface metal absorption array (1-10) is located, the third metal reflection thin film (2-11) corresponds to the position where the third surface metal absorption array (1-11) is located, and the fourth metal reflection thin film (2-12) corresponds to the position where the fourth surface metal absorption array (1-12) is located; The first middle-layer absorption positive electrode (2-1) and the first middle-layer absorption negative electrode (2-2) are respectively arranged on the upper left side and the upper right side of the first metal reflection thin film (2-9), the second middle-layer absorption positive electrode (2-3) and the second middle-layer absorption negative electrode (2-4) are respectively arranged on the upper left side and the upper right side of the second metal reflection thin film (2-10), the third middle-layer absorption positive electrode (2-6) and the third middle-layer absorption negative electrode (2-5) are respectively arranged on the lower left side and the lower right side of the third metal reflection thin film (2-11), and the fourth middle-layer absorption positive electrode (2-8) and the fourth middle-layer absorption negative electrode (2-7) are respectively arranged on the lower left side and the lower right side of the fourth metal reflection thin film (2-12).

4. An infrared spectroscopic sensing system based on a microfluidic thermal trigger module according to claim 1, wherein On the substrate layer (3), there are provided a first liquid storage tank (3-21), a second liquid storage tank (3-22), a third liquid storage tank (3-26), a fourth liquid storage tank (3-25), a fifth liquid storage tank (3-28), a sixth liquid storage tank (3-27), a seventh liquid storage tank (3-23), an eighth liquid storage tank (3-24), a first microchannel (3-29), a second microchannel (3-30), a third microchannel (3-31), a fourth microchannel (3-32), a fifth microchannel (3-33), a sixth microchannel (3-34), a seventh microchannel (3-35), an eighth microchannel (3-36), a first lower-layer absorption positive electrode (3-1), a first lower-layer absorption negative electrode (3-2), a second lower-layer absorption positive electrode (3-3), a second lower-layer absorption negative electrode (3-4), a third lower-layer absorption positive electrode (3-6), a third lower-layer absorption negative electrode (3-5), a fourth lower-layer absorption positive electrode (3-8), a fourth lower-layer absorption negative electrode (3-7), a first comb-shaped electrode (3-13), a second comb-shaped electrode (3-14), a third comb-shaped electrode (3-15), a fourth comb-shaped electrode (3-16), a fifth comb-shaped electrode (3-17), a sixth comb-shaped electrode (3-18), a seventh comb-shaped electrode (3-19), an eighth comb-shaped electrode (3-20), a first connection electrode (3-9), a second connection electrode (3-10), a third connection electrode (3-11), and a fourth connection electrode (3-12); The first liquid storage tank (3-21), the second liquid storage tank (3-22), the third liquid storage tank (3-26), and the fourth liquid storage tank (3-25) are arranged side by side in the upper half of the substrate layer, the fifth liquid storage tank (3-28), the sixth liquid storage tank (3-27), the seventh liquid storage tank (3-23), and the eighth liquid storage tank (3-24) are arranged side by side in the lower half of the substrate layer, the second liquid storage tank (3-22) corresponds to the position where the first surface metal absorption array (1-9) is located, the third liquid storage tank (3-26) corresponds to the position where the second surface metal absorption array (1-10) is located, the sixth liquid storage tank (3-27) corresponds to the position where the third surface metal absorption array (1-11) is located, and the seventh liquid storage tank (3-23) corresponds to the position where the fourth surface metal absorption array (1-12) is located. The first microchannel (3-29) is arranged above and connected to the first liquid storage tank (3-21), the second microchannel (3-30) is arranged above and connected to the second liquid storage tank (3-22), the third microchannel (3-31) is arranged above and connected to the third liquid storage tank (3-26), the fourth microchannel (3-32) is arranged above and connected to the fourth liquid storage tank (3-25), the fifth microchannel (3-33) is arranged below and connected to the fifth liquid storage tank (3-28), the sixth microchannel (3-34) is arranged below and connected to the sixth liquid storage tank (3-27), the seventh microchannel (3-35) is arranged below and connected to the seventh liquid storage tank (3-23), and the eighth microchannel (3-36) is arranged below and connected to the eighth liquid storage tank (3-24). The first lower absorption positive electrode (3-1) is arranged on the left side of the first microchannel (3-29) and connected to it through the first comb-shaped electrode (3-13). The first connection electrode (3-9) connects the first microchannel (3-29) and the second microchannel (3-30). The first lower absorption negative electrode (3-2) is arranged on the right side of the second microchannel (3-30) and connected to it through the second comb-shaped electrode (3-14). The second lower absorption positive electrode (3-3) is arranged on the left side of the third microchannel (3-31) and connected to it through the third comb-shaped electrode (3-15). The second connection electrode (3-10) connects the third microchannel (3-31) and the fourth microchannel (3-32). The second lower absorption negative electrode (3-4) is arranged on the right side of the fourth microchannel (3-32) and connected to it through the fourth comb-shaped electrode (3-16). The third lower absorption positive electrode (3-6) is arranged on the left side of the sixth microchannel (3-34) and connected to it through the sixth comb-shaped electrode (3-18). The third connection electrode (3-11) connects the fifth microchannel (3-33) and the sixth microchannel (3-34). The third lower absorption negative electrode (3-5) is arranged on the right side of the fifth microchannel (3-33) and connected to it through the fifth comb-shaped electrode (3-17). The fourth lower absorption positive electrode (3-8) is arranged on the left side of the eighth microchannel (3-36) and connected to it through the eighth comb-shaped electrode (3-20). The fourth connection electrode (3-12) connects the seventh microchannel (3-35) and the eighth microchannel (3-36). The fourth lower absorption negative electrode (3-7) is arranged on the right side of the seventh microchannel (3-35) and connected to it through the seventh comb-shaped electrode (3-19); Appropriate amount of kerosene is pumped into the first liquid storage tank (3-21), the kerosene liquid level in the first microchannel (3-29) remains at a high level, appropriate amount of slightly less kerosene is pumped into the second liquid storage tank (3-22), the kerosene liquid level in the second microchannel (3-30) remains at a low level, appropriate amount of slightly less kerosene is pumped into the third liquid storage tank (3-26), the kerosene liquid level in the third microchannel (3-31) remains at a low level, appropriate amount of kerosene is pumped into the fourth liquid storage tank (3-25), the kerosene liquid level in the fourth microchannel (3-32) remains at a high level, appropriate amount of kerosene is pumped into the fifth liquid storage tank (3-28), the kerosene liquid level in the fifth microchannel (3-33) remains at a high level, appropriate amount of slightly less kerosene is pumped into the sixth liquid storage tank (3-27), the kerosene liquid level in the sixth microchannel (3-34) remains at a low level, appropriate amount of slightly less kerosene is pumped into the seventh liquid storage tank (3-23), the kerosene liquid level in the seventh microchannel (3-35) remains at a low level, appropriate amount of kerosene is pumped into the eighth liquid storage tank (3-24), the kerosene liquid level in the eighth microchannel (3-36) remains at a high level; The first microchannel (3-29) is filled with a conductive liquid such as ferric chloride solution, the second microchannel (3-30) is filled with a conductive liquid such as ferric chloride solution, the third microchannel (3-31) is filled with a conductive liquid such as ferric chloride solution, the fourth microchannel (3-32) is filled with a conductive liquid such as ferric chloride solution, the fifth microchannel (3-33) is filled with a conductive liquid such as ferric chloride solution, the sixth microchannel (3-34) is filled with a conductive liquid such as ferric chloride solution, the seventh microchannel (3-35) is filled with a conductive liquid such as ferric chloride solution, the eighth microchannel (3-36) is filled with a conductive liquid such as ferric chloride solution.

5. The infrared spectroscopic sensing system based on a microfluidic thermal trigger module according to claim 1, characterized in that The first upper absorption positive electrode (1-1) of the metal dielectric layer (1) is connected to the first middle absorption positive electrode (2-1) of the metal reflection layer (2) and the first lower absorption positive electrode (3-1) of the substrate layer (3), the first upper absorption negative electrode (1-2) is connected to the first lower absorption negative electrode (3-2) through the first middle absorption negative electrode (2-2), the second upper absorption positive electrode (1-3) is connected to the second lower absorption positive electrode (3-3) through the second middle absorption positive electrode (2-3), the second upper absorption negative electrode (1-4) is connected to the second lower absorption negative electrode (3-4) through the second middle absorption negative electrode (2-4), the third upper absorption positive electrode (1-6) is connected to the third lower absorption positive electrode (3-6) through the third middle absorption positive electrode (2-6), the third upper absorption negative electrode (1-5) is connected to the third lower absorption negative electrode (3-5) through the third middle absorption negative electrode (2-5), the fourth upper absorption positive electrode (1-8) is connected to the fourth lower absorption positive electrode (3-8) through the fourth middle absorption positive electrode (2-8), the fourth upper absorption negative electrode (1-7) is connected to the fourth lower absorption negative electrode (3-7) through the fourth middle absorption negative electrode (2-7).

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