Dual-passband frequency selection structure applied to 5G signal protection
By designing a dual-pass band frequency selection structure for impedance layer, glue layer and dielectric layer, the problem that the prior art cannot take into account both 5G FR1 and 5G FR2 wave transmission and other frequency band shielding, and achieve wave transmission and shielding effects for frequency bands below 5GHz and around 28GHz.
Patent Information
- Application Number
- CN202510521589.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-04-24
- Publication Date
- 2025-07-22
AI Technical Summary
The existing frequency selection structure cannot take into account the shielding performance of wave transmittance near 5G FR1 and 5G FR2 and other frequency bands.
A dual-pass band frequency selection structure including an impedance layer, a glue layer and a dielectric layer is designed. The impedance layer consists of a hexagonal patch and a hollow triopole. A frequency selection surface is formed by cross-period arrangement to achieve the shielding of wave transmittance and other frequency bands below 5GHz and around 28GHz.
It realizes wave transmission performance for frequency bands below 5GHz and around 28GHz, and has good angular stability and electromagnetic shielding effect.
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Figure CN120357188A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the field of radar wave absorbing technology, and in particular to a dual-passband frequency selection structure applied to 5G signal protection. Background Art
[0002] The pursuit of social operation efficiency will increase the density of 5G communication equipment, and further integrate and miniaturize it. The increase of 5G equipment also increases the probability of electromagnetic interference. In order to ensure the normal operation of various devices in the 5G electromagnetic environment, new electromagnetic shielding devices must be designed. Electromagnetic interference shielding is one of the key factors in reducing the risk of electromagnetic interference in the 5G operating frequency band.
[0003] There have been a lot of studies on the application of frequency selective surfaces in 5G at home and abroad. However, most of the research at home and abroad focuses on 5G FR2 (millimeter wave), and there are fewer studies around 5G FR1 (downlink frequency band), and even fewer studies on both signal bands at the same time.
[0004] Therefore, in view of the above shortcomings, it is necessary to provide a dual-passband frequency selection structure for 5G signal protection. Summary of the invention
[0005] 1. Technical issues to be resolved
[0006] The technical problem to be solved by the present invention is to solve the problem that the existing traditional frequency selection structure cannot have the performance of wave transmission near 5G FR1 and 5GFR2 and shielding in other frequency bands.
[0007] (II) Technical solution
[0008] In order to solve the above technical problems, the present invention provides a dual-passband frequency selection structure for 5G signal protection, comprising an impedance layer, a glue layer and a dielectric layer adhered in sequence, the impedance layer is composed of a plurality of basic unit arrays, wherein the basic unit comprises a hexagonal patch and a tripole, the tripole is a hollow structure and is located in the middle of the hexagonal patch, and the forked end of the tripole is connected to the hexagonal patch through an extended patch.
[0009] As a further illustration of the present invention, preferably, the impedance layer is made of polyimide copper-clad film, and the dielectric layer is made of cyanate quartz fiber.
[0010] As a further illustration of the present invention, preferably, the outer side length of the hexagonal patch is 2.26 mm, and the width of the patch is 0.1 mm.
[0011] As a further illustration of the present invention, preferably, the width of the hollow gap in the tripole is 0.3 mm, and the distance between the center of the gap and the end of the forked gap is 1.3 mm.
[0012] As a further illustration of the present invention, preferably, the basic unit array pattern is cross-periodically and repetitively arranged in a two-dimensional plane.
[0013] As a further illustration of the present invention, preferably, the horizontal arrangement period of the basic unit is the peripheral spacing between two parallel patches of the hexagonal patch, and the vertical arrangement period of the basic unit is half of the diagonal distance of the hexagonal patch.
[0014] (III) Beneficial effects
[0015] The above technical solutions of the present invention have the following advantages:
[0016] The frequency selection structure designed by the present invention can achieve wave transmission below 5 GHz and near 28 GHz, shield other frequency bands, and has good angular stability. Description of the drawings
[0017] Figure 1 is a cross-sectional view of the structure of the present invention;
[0018] Figure 2 is a structural diagram of the basic unit of the impedance layer of the present invention;
[0019] Figure 3 is an array structure diagram of the impedance layer of the present invention;
[0020] Figure 4 is a reflectivity curve diagram of the present invention.
[0021] In the figure: 1. Impedance layer; 2. Adhesive layer; 3. Dielectric layer. Detailed implementation manners
[0022] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are some, but not all, of the embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.
[0023] A dual-band frequency selection structure applied to 5G signal protection, as Figure 1 shown, includes an impedance layer 1, an adhesive layer 2, and a dielectric layer 3 adhesively connected in sequence. The impedance layer 1 is a frequency selective surface made of a polyimide copper-clad film etched with a pattern. The adhesive layer 2 can be a type of adhesive, and the dielectric layer 3 is a cyanate quartz fiber.
[0024] Combined with Figure 1 、 Figure 2, the impedance layer 1 is composed of electromagnetic film basic units arranged in a cross-periodic and repetitive manner in a two-dimensional plane. The impedance layer basic unit includes a hexagonal patch 11 and a dipole 12. The hexagonal patch 11 is a regular hexagonal structure surrounded by six patches. The dipole 12 is a hollow structure and is located in the middle of the hexagonal patch 11. The bifurcated ends of the dipole 12 are connected to the hexagonal patch 11 through extended patches. The outer side length P of the hexagonal patch 11 is 2.26 mm, the patch width w is 0.1 mm, the distance a from the center of the hollow gap of the dipole 12 to the end of the bifurcated gap is 1.3 mm, and the gap width b is 0.3 mm. The thickness of the adhesive layer 2 is 0.09 - 0.15 mm; the thickness d of the dielectric layer 3 is 0.5 mm.
[0025] Combined with Figure 2 、 Figure 3 , the basic units are arranged in a horizontal direction with a period Dx (the peripheral distance between two parallel patches of the hexagonal patch 11) of 3.98 mm and in a vertical direction with a period Dy (the peripheral distance between two parallel patches of the hexagonal patch 11) of 4.6 mm to form an impedance layer array. The adjacent columns differ by Dy / 2, that is, 2.3 mm, in the vertical direction.
[0026] When the wave-penetrating structure of the present invention is in use, electromagnetic wave signals of various frequencies pass through the frequency selection structure jointly composed of the impedance layer 1, the adhesive layer 2, and the dielectric layer 3. As Figure 4 shown, since the dual-polarization reflectivity of this structure is basically the same under normal incidence, only one reflectivity curve is made for 0°. In the figure, when the normal incidence (i.e., 0°) in the frequency band of 0 - 5 GHz, the reflectivity is greater than -1 dB, and when it is 45°, both dual polarizations are greater than -1.2 dB. When the normal incidence (i.e., 0°) at 28 GHz and 45°, both dual polarizations are greater than -1 dB. By adjusting the above parameters, on the basis of keeping the Figure 4 waveform in basically unchanged, the wave-penetrating frequency band and shielding performance can be changed.
[0027] Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present invention, and are not intended to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: they can still modify the technical solutions recorded in the foregoing embodiments, or perform equivalent replacements on some of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the various embodiments of the present invention.
Claims
1. A dual-band frequency selection structure applied to 5G signal protection, characterized in that: It includes an impedance layer (1), an adhesive layer (2), and a dielectric layer (3) adhesively connected in sequence. The impedance layer (1) is composed of a plurality of basic unit arrays. Each basic unit includes a hexagonal patch (11) and a dipole (12). The dipole (12) has a hollow structure and is located in the middle of the hexagonal patch (11). The bifurcated ends of the dipole (12) are connected to the hexagonal patch (11) through extended patches.
2. The dual-band frequency selection structure applied to 5G signal protection according to claim 1, wherein: The impedance layer (1) is made of a polyimide copper-clad film, and the dielectric layer (3) is made of a cyanate quartz fiber.
3. The dual-band frequency selection structure applied to 5G signal protection according to claim 2, wherein: The outer side length of the hexagonal patch (1) is 2.26 mm, and the patch width is 0.1 mm.
4. A dual-band frequency selection structure applied to 5G signal protection according to claim 3, characterized in that: The width of the hollow gap of the dipole (12) is 0.3 mm, and the distance from the center of the gap to the bifurcated gap end is 1.3 mm.
5. A dual-band frequency selection structure applied to 5G signal protection according to claim 4, characterized in that: The basic unit array pattern is cross-periodically repeated arrangement in a two-dimensional plane.
6. The dual-band frequency selection structure applied to 5G signal protection according to claim 5, wherein: The horizontal arrangement period of the basic unit is the peripheral spacing between two parallel patches of the hexagonal patch (1), and the vertical arrangement period of the basic unit is half of the diagonal distance of the hexagonal patch (1).