Asymmetric single-pole double-throw switch with high power processing capability

Abstract

The embodiment of the invention provides an asymmetric single-pole double-throw switch with high power processing capability, and belongs to the technical field of wireless communication. The switch comprises a first coupling coil which is provided with a first port and a fourth port, the first port is in an open circuit state, and the fourth port is connected with a signal receiving unit; the second coupling coil is provided with a second port and a third port, the second port is connected with the antenna unit, the third port is connected with the first control unit, and the first control unit controls the conduction state of the third port; the third coupling coil is provided with a fifth port and an eighth port, the fifth port is connected with the second control unit, the second control unit controls the conduction state of the fifth port, and the eighth port is connected with the signal transmitting unit; and the fourth coupling coil is provided with a sixth port and a seventh port, the sixth port is connected with the antenna unit, and the seventh port is in a grounding state. The asymmetric single-pole double-throw switch provided by the embodiment of the invention has high power processing capability, and can realize low insertion loss and high isolation.

Description

Technical Field

[0001] This application relates to the field of wireless communication technologies, and particularly to an asymmetric single-pole double-throw switch with high power handling capabilities. Background Art

[0002] In a communication system, a communication device needs to switch between different communication frequency bands and receive / transmit modes to adapt to diverse communication requirements. However, in a communication system, implementing the switching between receive and transmit modes requires a large number of circuit components, and the signal transmission loss is high, affecting communication quality and efficiency.

[0003] Currently, related technologies use a single-pole double-throw switch to share an antenna port to implement the switching between receive and transmit modes of a communication system, effectively reducing the number of circuit components and ensuring the directional propagation of signals. However, the power handling capabilities of such a switch are limited, the insertion loss is relatively high, and the isolation is relatively low, affecting the communication performance of the communication system. Therefore, how to provide an asymmetric single-pole double-throw switch with high power handling capabilities, which can achieve low insertion loss and high isolation while having high power handling capabilities, is a technical problem to be urgently solved. Summary of the Invention

[0004] The main objective of the embodiments of this application is to propose an asymmetric single-pole double-throw switch with high power handling capabilities, which can achieve low insertion loss and high isolation while having high power handling capabilities.

[0005] The asymmetric single-pole double-throw switch with high power handling capabilities proposed by the embodiments of this application includes:

[0006] A receiving branch, the receiving branch includes a first coupling coil, a second coupling coil, and a first control unit. The first coupling coil is coupled to the second coupling coil. The first coupling coil is provided with a first port and a fourth port, the second coupling coil is provided with a second port and a third port. The first port is coupled to the second port, the fourth port is coupled to the third port. The first port is in an open state. The second port is used to be electrically connected to an antenna unit. The third port is electrically connected to the first control unit. The first control unit is used to control the conduction state of the third port. The fourth port is used to be connected to a signal receiving unit;

[0007] The transmitting branch, the transmitting branch includes a third coupling coil, a fourth coupling coil and a second control unit, the third coupling coil is coupled to the fourth coupling coil, the third coupling coil is provided with a fifth port and an eighth port, the fourth coupling coil is provided with a sixth port and a seventh port, the fifth port is coupled to the sixth port, the eighth port is coupled to the seventh port, the fifth port is electrically connected to the second control unit, the sixth port is used to be electrically connected to the antenna unit, the seventh port is in a grounded state, the second control unit is used to control the conduction state of the fifth port, and the eighth port is used to be connected to the signal transmitting unit.

[0008] In some embodiments, the first control unit is a first MOS transistor, the source electrode of the first MOS transistor is grounded, the gate electrode of the first MOS transistor is electrically connected to the first control power supply, and the drain electrode of the first MOS transistor is electrically connected to the third port.

[0009] In some embodiments, the second control unit is a second MOS transistor, the source electrode of the second MOS transistor is grounded, the gate electrode of the second MOS transistor is electrically connected to the second control power supply, and the drain electrode of the second MOS transistor is electrically connected to the fifth port.

[0010] In some embodiments, in the receiving mode, the first control unit is used to control the conduction state of the third port to be conductive, the second control unit is used to control the conduction state of the fifth port to be conductive, and the receiving branch is used to transmit the signal from the second port to the fourth port.

[0011] In some embodiments, in the transmitting mode, the first control unit is used to control the conduction state of the third port to be cutoff, the second control unit is used to control the conduction state of the fifth port to be cutoff, and the transmitting branch is used to transmit the signal from the eighth port to the sixth port.

[0012] In some embodiments, in the receiving mode, the first voltage value of the fifth port is less than the second voltage value of the sixth port.

[0013] In some embodiments, the operating frequency range of the asymmetric single-pole double-throw switch with high power handling ability is from 70 GHz to 110 GHz.

[0014] In some embodiments, the signal receiving unit is used to receive E-band signals.

[0015] In some embodiments, the asymmetric single-pole double-throw switch with high power handling ability has a metal wall structure.

[0016] In some embodiments, the first coupling coil, the second coupling coil, the third coupling coil, and the fourth coupling coil are disposed in a local interconnect dielectric layer in the metal wall structure.

[0017] For the asymmetric single-pole double-throw switch with high power handling capacity proposed in this application, the first control unit is connected to the third port of the second coupling coil, and the second control unit is connected to the fifth port of the third coupling coil. The first port remains open, and the seventh port is grounded. The second port and the sixth port are used to connect to the antenna unit. The fourth port is connected to the signal receiving unit, and the eighth port is connected to the signal transmitting unit. The first control unit is used to control the conduction state of the third port. The second control unit is used to control the conduction state of the fifth port.

[0018] Compared with the related art, when the conduction states of the first control unit and the second control unit in the asymmetric single-pole double-throw switch with high power handling capacity of this application are conductive, the third port and the fifth port are equivalent to being open. At this time, the voltage value of the fifth port is less than that of the sixth port, indicating that the asymmetric single-pole double-throw switch with high power handling capacity of this application has a higher power handling capacity. The receiving branch can operate as a band-pass filter network, and the signal will be completely transmitted. The transmitting branch can operate as a band-stop filter network, and no signal is transmitted from the eighth port to the antenna unit, providing the required high isolation. When the conduction states of the first control unit and the second control unit are cutoff, the third port and the fifth port are equivalent to being short-circuited. At this time, the receiving branch can operate as a band-stop filter network, and no signal is transmitted from the antenna unit to the fourth port, providing the required high isolation. The transmitting branch can operate as a band-pass filter network, and signal transmission can be achieved when the first control unit and the second control unit are cutoff. Therefore, the asymmetric single-pole double-throw switch with high power handling capacity proposed in this application has a high power handling capacity and can achieve low insertion loss and high isolation. Description of the Drawings

[0019] Figure 1A and Figure 1B is a schematic structural diagram of an asymmetric single-pole double-throw switch with high power handling capacity provided by an embodiment of this application;

[0020] Reference Numerals:

[0021] Antenna unit 100;

[0022] Receiving branch 110, first coupling coil 111, second coupling coil 112, first control unit 113;

[0023] Transmitting branch 120, third coupling coil 121, fourth coupling coil 122, second control unit 123;

[0024] Signal receiving unit 130;

[0025] Signal transmitting unit 140;

[0026] First port 1111, second port 1121, third port 1122, fourth port 1112;

[0027] Fifth port 1211, sixth port 1221, seventh port 1222, eighth port 1212;

[0028] Figure 2 It is a schematic diagram of the left - hand structure analysis of an asymmetric single - pole double - throw switch with high - power handling ability provided by an embodiment of the present application;

[0029] Figure 3 It is a schematic diagram of the right - hand structure analysis of an asymmetric single - pole double - throw switch with high - power handling ability provided by an embodiment of the present application;

[0030] Figure 4 It is a schematic diagram when the left - hand structure of an asymmetric single - pole double - throw switch with high - power handling ability provided by an embodiment of the present application is conducting;

[0031] Figure 5 It is a schematic diagram when the right - hand structure of an asymmetric single - pole double - throw switch with high - power handling ability provided by an embodiment of the present application is conducting;

[0032] Figure 6 It is a graph of the insertion loss results of the left - hand structure of an asymmetric single - pole double - throw switch with high - power handling ability provided by an embodiment of the present application;

[0033] Figure 7 It is a graph of the insertion loss results of the right - hand structure of an asymmetric single - pole double - throw switch with high - power handling ability provided by an embodiment of the present application;

[0034] Figure 8 It is a graph of the isolation results of the left - hand structure of an asymmetric single - pole double - throw switch with high - power handling ability provided by an embodiment of the present application;

[0035] Figure 9 It is a graph of the isolation results of the right - hand structure of an asymmetric single - pole double - throw switch with high - power handling ability provided by an embodiment of the present application;

[0036] Figure 10 It is a graph of the power handling ability results of an asymmetric single - pole double - throw switch with high - power handling ability provided by an embodiment of the present application. Detailed implementation manners

[0037] Embodiments of the present application will be described in detail below. Examples of the embodiments are shown in the accompanying drawings, where the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the drawings are exemplary and are only used to explain the present application and should not be construed as a limitation of the present application.

[0038] In modern communication systems, communication devices need to quickly switch between different frequency bands and receive / transmit modes to meet diverse communication requirements. This switching ability is crucial for improving the flexibility and efficiency of the system. However, implementing mode switching usually requires a large number of circuit components, which not only increases the system complexity and cost but may also cause signal transmission losses, affecting communication quality and efficiency.

[0039] In the field of communication, a single-pole double-throw switch can enable the receiving branch and the transmitting branch to share one antenna unit, which can not only reduce the number of circuit components and save costs but also ensure the directional propagation of signals. The insertion loss of the single-pole double-throw switch affects the sensitivity of the receiving branch and the power efficiency of the transmitting branch, and the isolation of the single-pole double-throw switch prevents the leakage of high-power signals from the transmitting branch from damaging the receiving branch. Therefore, the performance of the single-pole double-throw switch directly affects the performance of the radio frequency transceiver system. However, as the operating frequency exceeds 60 GHz, it is difficult for the insertion loss and isolation of single-pole double-throw switches in the E-band and above bands to meet the actual requirements. Moreover, the power handling ability of the single-pole double-throw switch, that is, the 1-dB compression point (P1dB), is severely limited in the high-frequency field. Therefore, how to provide an asymmetric single-pole double-throw switch with high power handling ability, which can achieve low insertion loss and high isolation while having high power handling ability, is a technical problem to be solved urgently.

[0040] The following will be combined with Figure 1A and Figure 1B to clearly and completely describe an asymmetric single-pole double-throw switch with high power handling ability provided by the embodiments of the present application. Obviously, the embodiments described below are some embodiments of the present application, not all embodiments.

[0041] Referring to Figure 1A and Figure 1B , Figure 1A and Figure 1B are schematic structural diagrams of an asymmetric single-pole double-throw switch with high power handling ability provided by the embodiments of the present application. It includes:

[0042] Receiving branch 110, the receiving branch 110 includes a first coupling coil 111, a second coupling coil 112 and a first control unit 113. The first coupling coil 111 is coupled to the second coupling coil 112. The first coupling coil 111 is provided with a first port 1111 and a fourth port 1112. The second coupling coil 112 is provided with a second port 1121 and a third port 1122. The first port 1111 and the second port 1121 are coupled. The fourth port 1112 and the third port 1122 are coupled. The first port 1111 is in an open state. The second port 1121 is used to be electrically connected to the antenna unit 100. The third port 1122 is electrically connected to the first control unit 113. The first control unit 113 is used to control the conduction state of the third port 1122. The fourth port 1112 is used to be connected to the signal receiving unit 130;

[0043] Transmitting branch 120, the transmitting branch 120 includes a third coupling coil 121, a fourth coupling coil 122 and a second control unit 123. The third coupling coil 121 is coupled to the fourth coupling coil 122. The third coupling coil 121 is provided with a fifth port 1211 and an eighth port 1212. The fourth coupling coil 122 is provided with a sixth port 1221 and a seventh port 1222. The fifth port 1211 and the sixth port 1221 are coupled. The eighth port 1212 and the seventh port 1222 are coupled. The fifth port 1211 is electrically connected to the second control unit 123. The sixth port 1221 is used to be electrically connected to the antenna unit 100. The seventh port 1222 is in a grounded state. The second control unit 123 is used to control the conduction state of the fifth port 1211. The eighth port 1212 is used to be connected to the signal transmitting unit 140.

[0044] In some embodiments of the present application, the asymmetric single-pole double-throw switch with high-power processing ability includes a receiving branch 110 and a transmitting branch 120. Among them, the receiving branch 110 is used to transmit the signal received by the antenna unit 100 to the signal receiving unit 130. The transmitting branch 120 is used to transmit the signal of the signal transmitting unit 140 to the antenna unit 100. In a wireless communication system, the asymmetric single-pole double-throw switch with high-power processing ability can quickly switch between the receiving mode and the transmitting mode through the receiving branch 110 and the transmitting branch 120, ensuring the efficient operation of the antenna unit 100 in different modes, and at the same time avoiding signal interference and loss.

[0045] In some embodiments of the present application, the receiving branch 110 includes a first coupling coil 111, a second coupling coil 112, and a first control unit 113. Among them, the first coupling coil 111 and the second coupling coil 112 can be a microstrip line coupler, a spiral coupling coil, or other types of coupling coil structures, and are not specifically limited. The first coupling coil 111 and the second coupling coil 112 are used to realize the coupled transmission of signals between the second port 1121 and the fourth port 1112. The first coupling coil 111 and the second coupling coil 112 are connected through electromagnetic coupling. The first control unit 113 can be a MOS transistor, a BJT transistor, or other types of electronic switch devices, and is not specifically limited. The first control unit 113 is used to control the conduction state of the third port 1122. Among them, the conduction state includes conduction and cutoff.

[0046] It should be noted that the first coupling coil 111 is provided with a first port 1111 and a fourth port 1112, and the first port 1111 and the fourth port 1112 are arranged at both ends of the first coupling coil 111. The first port 1111 is in an open state, and the fourth port 1112 is used to connect to the signal receiving unit 130. Among them, the signal receiving unit 130 can be a low-noise amplifier, a filter, or other types of receiving circuits, and is not specifically limited. The signal receiving unit 130 is used to receive and process signals.

[0047] It should be noted that the second coupling coil 112 is provided with a second port 1121 and a third port 1122, and the second port 1121 and the third port 1122 are arranged at both ends of the second coupling coil 112. The second port 1121 is used to be electrically connected to the antenna unit 100, and the third port 1122 is electrically connected to the first control unit 113. Among them, the antenna unit 100 can be a dipole antenna, a microstrip antenna, or other types of antennas, and is not specifically limited. The antenna unit 100 is used for the transmission and reception of wireless signals.

[0048] In some embodiments of the present application, the transmitting branch 120 includes a third coupling coil 121, a fourth coupling coil 122, and a second control unit 123. Among them, the third coupling coil 121 and the fourth coupling coil 122 can be a microstrip line coupler, a spiral coupling coil, or other types of coupling coil structures, and are not specifically limited. The third coupling coil 121 and the fourth coupling coil 122 are connected through electromagnetic coupling and are used to realize the coupled transmission of signals between the eighth port 1212 and the sixth port 1221. The second control unit 123 can be a MOS transistor, a BJT transistor, or other types of electronic switch devices, and is not specifically limited. The second control unit 123 is used to control the conduction state of the fifth port 1211. Among them, the conduction state includes conduction and cutoff.

[0049] It should be noted that the third coupling coil 121 is provided with a fifth port 1211 and an eighth port 1212, and the fifth port 1211 and the eighth port 1212 are arranged at both ends of the third coupling coil 121. The fifth port 1211 is electrically connected to the second control unit 123, and the eighth port 1212 is used to connect to the signal transmitting unit 140. Among them, the signal transmitting unit 140 can be a power amplifier, a modulator or other types of transmitting circuits, and is not specifically limited. The signal transmitting unit 140 is used to transmit signals.

[0050] It should be noted that the fourth coupling coil 122 is provided with a sixth port 1221 and a seventh port 1222, and the sixth port 1221 and the seventh port 1222 are arranged at both ends of the fourth coupling coil 122. The sixth port 1221 is used to be electrically connected to the antenna unit 100. The seventh port 1222 is in a grounded state, and the seventh port is used to provide a stable reference potential for the transmitting branch 120 to ensure the stability of signal transmission.

[0051] In some embodiments of the present application, referring to Figure 1A and Figure 1B , the first control unit includes a first MOS transistor. The source of the first MOS transistor is grounded, the gate of the first MOS transistor is electrically connected to the first control power supply, and the drain of the first MOS transistor is electrically connected to the third port. Among them, the first MOS transistor can be an NMOS transistor or a PMOS transistor, specifically depending on the requirements of the circuit design and the polarity of the working voltage. The first control power supply can be a DC power supply or a pulse power supply, and is not specifically limited. The first control power supply is used to provide a gate voltage for the first MOS transistor to control the conduction or cutoff of the first MOS transistor. For example, in an actual circuit design, the first control power supply can be a +5V DC power supply for controlling the NMOS transistor to conduct; or it can be a -5V DC power supply for controlling the PMOS transistor to conduct.

[0052] It should be noted that when the first control power supply controls the first MOS transistor to conduct, the third port is equivalent to an open circuit, thereby realizing signal transmission. When the first control power supply controls the first MOS transistor to cutoff, the third port is equivalent to a short circuit, thereby blocking signal transmission.

[0053] In some embodiments of the present application, referring to Figure 1A and Figure 1B, the second control unit includes a second MOS transistor. The source of the second MOS transistor is grounded, the gate of the second MOS transistor is electrically connected to the second control power supply, and the drain of the second MOS transistor is electrically connected to the fifth port. Among them, the second MOS transistor can be an NMOS transistor or a PMOS transistor, specifically depending on the requirements of the circuit design and the polarity of the operating voltage. The second control power supply can be a DC power supply or a pulse power supply, and is not specifically limited. The second control power supply is used to provide a gate voltage for the second MOS transistor to control the conduction or cutoff of the second MOS transistor. For example, in an actual circuit design, the second control power supply can be a +6V DC power supply for controlling the NMOS transistor to conduct; or it can be a -6V DC power supply for controlling the PMOS transistor to conduct.

[0054] It should be noted that when the second control power supply controls the second MOS transistor to conduct, the fifth port is equivalent to an open circuit, thereby blocking signal transmission; when the second control power supply controls the second MOS transistor to cutoff, the seventh port is equivalent to a short circuit, thereby realizing signal transmission.

[0055] In some embodiments of the present application, referring to Figure 1A and Figure 1B , in the receiving mode, the first control unit is used to control the conduction state of the third port to be conductive. At this time, the receiving branch can be used as a band-pass filter network to control the signal transmission between the second port and the fourth port. The second control unit is used to control the conduction state of the seventh port to be conductive. At this time, the transmitting branch can be used as a band-stop filter network to block the signal transmission between the eighth port and the sixth port.

[0056] In some embodiments of the present application, referring to Figure 1A and Figure 1B , in the transmitting mode, the first control unit is used to control the conduction state of the third port to be cutoff. At this time, the receiving branch can be used as a band-stop filter network to block the signal transmission between the second port and the fourth port. The second control unit is used to control the conduction state of the fifth port to be cutoff. At this time, the transmitting branch can be used as a band-pass filter network to control the signal transmission between the eighth port and the sixth port.

[0057] In some embodiments of the present application, referring to Figure 1A and Figure 1B , in the receiving mode, the first voltage value of the fifth port is less than the second voltage value of the sixth port, ensuring that the signal of the second control unit connected to the fifth port will not leak, and at the same time, P1dB will not deteriorate. Therefore, the asymmetric single-pole double-throw switch with high power handling ability in the embodiments of the present application can obtain higher power handling ability.

[0058] In some embodiments of the present application, referring to Figure 1A and Figure 1B, the operating frequency range of the asymmetric single-pole double-throw switch with high power handling capability is from 70 GHz to 110 GHz. In the receive mode, the insertion loss is 2.2 dB and the isolation is 21 dB. In the transmit mode, the insertion loss is 2.1 dB, the isolation is 30 dB, and P1dB is 19.5 dBm. The asymmetric single-pole double-throw switch with high power handling capability in the embodiments of the present application has the characteristics of low insertion loss and high isolation while having high power handling capability within the frequency range of 70 GHz to 110 GHz, and can effectively improve the performance and reliability of wireless communication systems.

[0059] In some embodiments of the present application, referring to Figure 1A and Figure 1B , the signal receiving unit is used to receive E-band signals. After receiving the E-band signals, the signal receiving unit can convert them into electrical signals for subsequent processing. The E-band (Electronically Controlled Band) refers to the frequency band ranging from 60 GHz to 90 GHz. The E-band has important application values in wireless communication. For example, in 5G millimeter-wave communication, the E-band can provide communication links with high data rates and low latency, support large-scale antenna arrays and beamforming technologies, thereby significantly improving network capacity and user experience. In addition, in the field of satellite communication, the E-band is used to implement high-data-rate satellite links, support satellite broadband communication and high-speed transmission of earth observation data, and meet the growing satellite communication demands.

[0060] In some embodiments of the present application, referring to Figure 1A and Figure 1B , the asymmetric single-pole double-throw switch with high power handling capability has a metal wall structure. The metal wall structure is a shielding structure, usually composed of multiple metal layers. The metal wall structure is used to achieve electromagnetic shielding and signal isolation, can effectively reduce crosstalk between different signal paths, and improve the isolation and signal transmission efficiency of the single-pole double-throw switch.

[0061] It should be noted that the metal layer structure refers to the conductive layer structure formed by multi-layer metal interconnection technology during the integrated circuit manufacturing process. Each metal layer is used to achieve specific signal transmission and shielding functions. Through the stacking and interconnection of multiple metal layers, complex circuit functions and efficient signal transmission can be realized.

[0062] It should be noted that the metal wall structure of the embodiments of the present application can be implemented by a Complementary Metal-Oxide-Semiconductor (CMOS) process. The metal wall structure implemented by the CMOS process includes eight metal layers, which are, from the inside to the outside, the first metal layer (Metal Layer 1, M1 layer), the second metal layer (Metal Layer 2, M2 layer), the third metal layer (Metal Layer 3, M3 layer), the fourth metal layer (Metal Layer 4, M4 layer), the upper layer (Upper Layer, UA layer), the output layer (Output Layer, OA layer), the output block layer (Output Block Layer, OB layer), and the local interconnect dielectric layer (Local Interconnect Dielectric Layer, LD layer). Among them, the M1 layer is used for routing DC signals. The M2 and M3 metal layers are used in combination to form a ground layer. The LD layer is used to implement the transmission line and is the topmost metal layer in the metal wall structure. The M4 layer, OB layer, OA layer, and UA layer are stacked with other layers to form the metal wall structure.

[0063] In some embodiments of the present application, referring to Figure 1A and Figure 1B , the first coupling coil, the second coupling coil, the third coupling coil, and the fourth coupling coil are disposed in the local interconnect dielectric layer (Local Interconnect Dielectric Layer, LD layer) of the metal wall structure. Disposing the first coupling coil, the second coupling coil, the third coupling coil, and the fourth coupling coil in the LD layer can reduce the loss and interference during signal transmission, improve the signal transmission efficiency, simplify the wiring design, and optimize the transmission performance of high-frequency signals.

[0064] The asymmetric single-pole double-throw switch with high power handling capability in the embodiments of the present application is a structure that is asymmetric about the left and right of the antenna unit. First, the structure on the left side of the antenna port is analyzed. Referring to Figure 2 , Figure 2 is a schematic diagram for analyzing the left-side structure of an asymmetric single-pole double-throw switch with high power handling capability provided by the embodiments of the present application.

[0065] Assume that the voltages and currents at port 1 (i.e., the first port of the receiving branch) of the coupled coil structure (i.e., the first coupled coil and the second coupled coil) can be written as V1 and I1, those at port 2 (i.e., the second port of the receiving branch) can be written as V2 and I2, those at port 3 (i.e., the third port of the receiving branch) can be written as V3 and I3, and those at port 4 (i.e., the fourth port of the receiving branch) can be written as V4 and I4. The impedance matrix of the coupled line structure with all ports open can be expressed by the following formula (1):

[0066]

[0067] Where, Z 11 = Z 22 = Z 33 = Z 44 = -j / 2(Z oe + Z oo )cotθ, Z 12 = Z 11 = Z 34 = Z 43 = -j / 2(Z oe - Z oo )cotθ, Z 13 = Z 31 = Z 24 = Z 42 = -j / 2(Z oe - Z oo )cscθ, Z 14 = Z 41 = Z 23 = Z 32 = -j / 2(Z oe + Z oo )cscθ, Z oe represents the even-mode impedance, Z oo represents the odd-mode impedance, j represents the imaginary unit, and θ represents the phase change during signal transmission.

[0068] The first control unit is bridged between port 3 of the second coupled coil and the ground, and port 1 remains open. Port 2 is used to connect to the antenna unit (Antenna, ANT), and port 4 is used to connect to the signal receiving unit. When the first control unit is in the "on" or "off" state, the signal path between port 2 and port 4 will be connected or disconnected.

[0069] When the control unit is in the "on" state, port 3 is open, and I1 = I3 = 0. Therefore, the impedance matrix equations for port 2 and port 4 will be simplified to the following formulas (2) and (3):

[0070] V2 = Z 22 I2 + Z 22 I2 (2)

[0071] V4 = Z 24 I2 + Z 44 I4(3)

[0072] Therefore, the impedances at ports 2 and 4 of the first coupling coil can be expressed by the following formula (4):

[0073]

[0074]

[0075] where i represents 2 or 4.

[0076] When Z oe and Z oo are respectively selected as 100 Ω and 25 Ω, it can be found that when θ1 < θ < θ2 (θ1 is the left endpoint of the abscissa of the curve in Figure 4 and θ2 is the right endpoint of the abscissa of the curve in Figure 4 ), the value of Z iT is greater than 0, and the peak appears at the center frequency point (θ = 90°), and the value of Z iT is greater than 0, and the peak appears at the center frequency point (θ = 90°). Therefore, when the electrical length of the coupling coil structure (i.e., the first coupling coil and the second coupling coil) is a quarter wavelength and the input impedance is matched with Z iT , this structure can operate as a band-pass filter network, and in this case, the signal will be completely transmitted.

[0077] When the first control unit is in the "cut-off" state, port 3 will be short-circuited to the ground, I1 = 0 and V3 = 0. The impedances at ports 2 and 4 can be expressed by the following formulas (5) and (6):

[0078]

[0079] Since Z i2 and Z i4 are pure imaginary numbers, the impedances at ports 2 and 4 are equal to 0 at any θ. Therefore, when the first control unit is in the "cut-off" state, the asymmetric single-pole double-throw switch with high power handling capacity in the embodiments of the present application can operate as a band-stop filter network. In this case, no signal passes from the antenna unit to the signal receiving unit, providing the required high isolation for the single-pole double-throw switch.

[0080] Refer to Figure 3 , Figure 3 which is a schematic diagram of the right-side structure analysis of an asymmetric single-pole double-throw switch with high power handling capacity provided by the embodiments of the present application.

[0081] Assume that the voltages and currents at port 1 (i.e., the fifth port of the transmitting branch) of the coupled-line structure (i.e., the third and fourth coupled coils) can be written as V1 and I1, those at port 2 (i.e., the sixth port of the transmitting branch) can be written as V2 and I2, those at port 3 (i.e., the seventh port of the transmitting branch) can be written as V3 and I3, and the voltages and currents at port 4 (i.e., the eighth port of the transmitting branch) can be written as V4 and I4. The admittance matrix of the coupled-line structure with all ports open can be expressed as:

[0082]

[0083] where Y 11 = Y 22 = Y 33 = Y 44 = -j / 2(Y oo + Y oe ) cotθ, Y 12 = Y 21 = Y 34 = Y 43 = -j / 2(Y oo - Y oe ) cotθ, Y 13 = Y 31 = Y 24 = Y 42 = -j / 2(Y oo - Y oe ) cscθ, Y 14 = Y 41 = Y 23 = Y 32 = -j / 2(Y oo + Y oe ) cscθ, Y oo represents the even-mode admittance, Y oe represents the odd-mode admittance, j represents the imaginary unit, and θ represents the phase change during signal transmission.

[0084] When the second control unit is in the "cut-off" state, port 1 can be regarded as a short circuit, and V1 = V3 = 0. The admittance matrix equations for ports 2 and 4 will be simplified to the following formulas (8) and (9):

[0085] I2 = Y 22 V2 + Y 22 V2 (8)

[0086] I4 = Y 24 V2 + Y 44 V4 (9)

[0087] Furthermore, the impedances at ports 2 and 4 can be expressed as the following formula (10):

[0088]

[0089] Among them, i represents 2 or 4.

[0090] When Z oe and Z oo are respectively selected as 100 Ω and 25 Ω, it can be seen from Figure 5 that when θ3 < θ < θ4 (θ3 is the left endpoint of the abscissa of the curve in Figure 5 and θ4 is the right endpoint of the abscissa of the curve in Figure 5 ), the value of Z iT is greater than 0, and the lowest point value appears at the center frequency point (θ = 90°). Therefore, when the electrical length of the coupled line structure is selected as a quarter wavelength and the input impedance is matched, the right structure of the high-power handling capacity single-pole double-throw switch according to the embodiments of the present application can operate as a band-pass filter network, and in this case, the signal will be completely transmitted.

[0091] When the second control unit is in the "on" state, port 1 can be regarded as an open circuit, I1 = 0, and V3 = 0. The impedances at port 2 and port 4 can be expressed by the following formulas (11) and (12):

[0092]

[0093] Since Z i2 and Z i4 are pure imaginary numbers, the impedances at port 2 and port 4 are equal to 0 at any θ. Therefore, when the second control unit is in the "on" state, the right structure of the high-power handling capacity single-pole double-throw switch according to the embodiments of the present application can operate as a band-stop filter network, and in this case, no signal passes from the signal transmitting unit to the antenna unit, providing the required high isolation for the single-pole double-throw switch.

[0094] In order to improve the isolation of the single-pole double-throw switch and reduce the insertion loss, the related art also uses MOS transistors to realize the switching of the antenna unit between the receiving branch and the transmitting branch. However, the single-pole double-throw switch in the related art can only achieve signal transmission when the MOS transistor is in the "on" state. However, since the voltage of the port connected to the signal transmitting unit is capacitively divided at the gate through the parasitic capacitance in the MOS transistor, when the voltage at the gate of the MOS transistor becomes large enough, the parasitic diode related to the MOS transistor starts to conduct, resulting in serious signal leakage and deterioration of P1dB. Therefore, when the voltage of the port connected to the MOS transistor is large, the power handling capacity of the single-pole double-throw switch is limited.

[0095] To improve the power handling capability of the single-pole double-throw switch, when the second MOS transistor (i.e., the second control unit) of the right-side structure of the asymmetrical single-pole double-throw switch with high power handling capability in the present application embodiment is in the "cut-off" state, V1 = V3 = 0. Therefore, the following relationships can be established: V2 = jI4Z0, V4 = jI2Z0.

[0096] Furthermore, it can be obtained that V2·I2 = V4·I4.

[0097] Therefore, when the second MOS transistor is in the "cut-off" state, energy can be transmitted from the signal transmitting unit to the antenna unit. This indicates that in this state, the signal transmission path is unobstructed and not hindered by the second MOS transistor.

[0098] When the second MOS transistor (i.e., the second control unit) is in the "conducting" state, I1 = V3 = 0. Therefore, the following relationships can be established:

[0099] It can be seen therefrom that the voltage value at port 1 is less than the voltage value at port 2. At this time, the parasitic diode of the second MOS transistor will not conduct, thus avoiding signal leakage and the deterioration of P1dB. Therefore, the asymmetrical single-pole double-throw switch with high power handling capability in the present application embodiment has a higher power handling capability.

[0100] Based on the above analysis, it can be concluded that the left and right side structures of the asymmetrical single-pole double-throw switch with high power handling capability in the present application embodiment have different switching characteristics. In the TX mode (i.e., the transmission mode), the TX branch (i.e., the transmission branch) allows the antenna signal to be transmitted from the TX port (i.e., the signal transmitting unit) to the ANT port (i.e., the antenna unit). At the same time, the RX branch (i.e., the receiving branch) provides isolation between the ANT port and the RX port (i.e., the signal receiving unit). For this purpose, a control voltage V C = 0 is applied to the first MOS transistor (i.e., the first control unit) and the second MOS transistor (i.e., the second control unit) to make them work in the cut-off state. The signal is transmitted from the TX port to the ANT port. At this time, the TX branch is equivalent to a band-pass filter, which has a higher insertion loss while also achieving a higher power handling capability. The RX branch is equivalent to a band-stop filter, achieving better isolation. On the contrary, when working in the RX mode, a control voltage V C = 1.2V is applied to the first MOS transistor (i.e., the first control unit) and the second MOS transistor (i.e., the second control unit) to make them work in the conducting state. The TX branch provides isolation between the ANT port and the TX port. At the same time, the RX branch allows the signal to be transmitted from the ANT port to the RX port.

[0101] Refer to Figure 4 , Figure 4It is a schematic diagram when the left side of an asymmetric single-pole double-throw switch with high power handling capability provided by an embodiment of the present application is conducting, showing the working principle that when the first control unit is in the "conducting" state, the third port is equivalent to an open circuit. Specifically, it includes: the abscissa is the normalized electrical length (θ / π), ranging from 0 to 3.5, corresponding to the theoretical analysis range of the electrical length θ of the coupling coil from 0 to 3.5π; the ordinate is the modulus of the equivalent impedance (unit: Ω), ranging from 0 to 35, reflecting the dynamic change of the port impedance with the electrical length. The curve in the figure shows that when the electrical length θ approaches a quarter wavelength (corresponding to θ = π / 2, that is, at about 0.5 on the abscissa), the impedance matching reaches the optimal value (about 17.5 Ω, corresponding to the middle value of the ordinate). At this time, the switch acts as a band-pass filter network, with the highest signal transmission efficiency and the lowest insertion loss.

[0102] Reference Figure 5 , Figure 5 It is a schematic diagram when the right side of an asymmetric single-pole double-throw switch with high power handling capability provided by an embodiment of the present application is conducting, showing the working principle that when the second control unit is in the "conducting" state, the fifth port is equivalent to an open circuit. Specifically, it includes: the abscissa represents the normalized electrical length (θ / π), ranging from 0 to 3.5, corresponding to the theoretical analysis range of the electrical length θ of the coupling coil from 0 to 3.5π; the ordinate represents the modulus of the equivalent admittance, with the unit of S (Siemens), ranging from 0 to 350, reflecting the dynamic change of the port admittance with the electrical length. As can be seen from the Figure 5 curve in it, when the electrical length θ approaches a quarter wavelength (i.e., θ = π / 2, corresponding to about 0.5 on the abscissa), the admittance matching reaches the optimal value (about 175 S, corresponding to the middle value of the ordinate). At this time, the switch acts as a band-stop filter network, with the lowest signal transmission efficiency and the highest isolation.

[0103] Reference Figure 6 , Figure 6 It is a graph of the insertion loss results of the left side structure of an asymmetric single-pole double-throw switch with high power handling capability provided by an embodiment of the present application. Specifically, it includes: the abscissa is the actual operating frequency (70 GHz - 110 GHz, unit: GHz), covering the E band; the ordinate is divided into two parts: the left main vertical axis (range: 0 to -10 dB) corresponds to the insertion loss (S21 parameter), reflecting the transmission efficiency of the signal from the antenna unit to the signal transmitting or signal receiving unit. The lower the value, the smaller the loss; the right secondary vertical axis (range: 10 dB to -50 dB) corresponds to the input or output port reflection coefficient (S11 and S22 parameters), reflecting the impedance matching degree. The closer the value is to negative infinity, the better the performance. Figure 6There are a total of 6 curves, divided into two categories: simulation results (sim), represented by dashed lines; and measurement results (mea), represented by solid lines. Each curve corresponds to different parameters, specifically: sim S21 (simulated insertion loss), sim S11 (simulated input port reflection coefficient), sim S22 (simulated output port reflection coefficient), mea S21 (measured insertion loss), mea S11 (measured input port reflection coefficient), and mea S22 (measured output port reflection coefficient). By comparing the simulated and measured curves, it can be seen that the trends of the two are highly consistent within the E-band, indicating that the theoretical model is accurate and reliable, verifying the core advantages of the asymmetric single-pole double-throw switch with high power handling ability provided by the embodiments of the present application, which has low insertion loss and excellent impedance matching in the on state.

[0104] Reference Figure 7 , Figure 7 is the insertion loss result diagram of the right structure of an asymmetric single-pole double-throw switch with high power handling ability provided by the embodiments of the present application. Specifically, the abscissa is the actual operating frequency (70 GHz - 110 GHz, unit: GHz), covering the E-band; the ordinate is divided into two parts: the left main vertical axis (range: 0 to -10 dB) corresponds to the insertion loss (S21 parameter), reflecting the transmission efficiency of the signal from the antenna unit to the signal transmitting or receiving unit. The lower the value, the smaller the loss; the right secondary vertical axis (range: 10 dB to -50 dB) corresponds to the input or output port reflection coefficient (S11 and S22 parameters), reflecting the impedance matching degree. The closer the value is to negative infinity, the better the performance. Figure 7 There are a total of 6 curves, divided into two categories: simulation results (sim), represented by dashed lines; and measurement results (mea), represented by solid lines. Each curve corresponds to different parameters, specifically: sim S21 (simulated insertion loss), sim S11 (simulated input port reflection coefficient), sim S22 (simulated output port reflection coefficient), mea S21 (measured insertion loss), mea S11 (measured input port reflection coefficient), and mea S22 (measured output port reflection coefficient). By comparing the simulated and measured curves, it can be seen that the trends of the two are highly consistent within the E-band, indicating that the theoretical model is accurate and reliable, verifying the core advantages of the asymmetric single-pole double-throw switch with high power handling ability provided by the embodiments of the present application, which has low insertion loss and excellent impedance matching in the on state.

[0105] Reference Figure 8 , Figure 8It is the isolation result diagram of the left structure of an asymmetric single-pole double-throw switch with high power handling capacity provided by an embodiment of the present application, specifically including: the abscissa in the figure is the actual operating frequency (70 GHz - 110 GHz, unit: GHz), covering the E band; the ordinate is divided into two parts: the left main vertical axis (range: 0 to -30 dB) corresponds to the isolation (S21 parameter), reflecting the blocking ability of the signal from the transmitting / receiving end to the antenna end, and the higher the value, the less the leakage; the right secondary vertical axis (range: 10 dB to -40 dB) corresponds to the input or output port reflection coefficient (S11 / S22 parameter), reflecting the impedance mismatch degree of the port in the closed state, and the closer the value is to 0 dB, the worse the match. Figure 8 There are a total of 6 curves, divided into two categories: simulation results (sim), represented by dashed lines. Measured results (mea), represented by solid lines. Each curve corresponds to different parameters, specifically: sim S21 (simulated isolation), sim S11 (simulated input port reflection coefficient), sim S22 (simulated output port reflection coefficient), mea S21 (measured isolation), mea S11 (measured input port reflection coefficient), mea S22 (measured output port reflection coefficient). By comparing the simulation and measured curves, it can be seen that the trends of the two are consistent within the E band, indicating that the theoretical model is accurate and reliable, and verifying the core advantages of the asymmetric single-pole double-throw switch with high power handling capacity provided by the embodiment of the present application, which has high isolation and impedance mismatch characteristics under cut-off.

[0106] Reference Figure 9 , Figure 9 It is the isolation result diagram of the right structure of an asymmetric single-pole double-throw switch with high power handling capacity provided by an embodiment of the present application, specifically including: the abscissa is the actual operating frequency (70 GHz - 110 GHz, unit: GHz), covering the E band; the ordinate is divided into two parts: the left main vertical axis (range: 0 to -30 dB) corresponds to the isolation (S21 parameter), reflecting the blocking ability of the signal from the transmitting / receiving end to the antenna end, and the higher the value, the less the leakage; the right secondary vertical axis (range: 10 dB to -40 dB) corresponds to the input or output port reflection coefficient (S11 / S22 parameter), reflecting the impedance mismatch degree of the port in the closed state, and the closer the value is to 0 dB, the worse the match. Figure 9There are a total of 6 curves, divided into two categories: simulation results (sim), represented by dashed lines. Measured results (mea), represented by solid lines. Each curve corresponds to different parameters, specifically: sim S21 (simulated isolation), sim S11 (simulated input port reflection coefficient), sim S22 (simulated output port reflection coefficient), mea S21 (measured isolation), mea S11 (measured input port reflection coefficient), mea S22 (measured output port reflection coefficient). By comparing the simulated and measured curves, it can be seen that the trends of the two are consistent within the E-band, indicating that the theoretical model is accurate and reliable, verifying the core advantages of the high-power handling asymmetric single-pole double-throw switch provided by the embodiments of the present application, which has high isolation and impedance mismatch characteristics in the cut-off state.

[0107] Reference Figure 10 , Figure 10 is the power handling ability result diagram of an asymmetric single-pole double-throw switch with high-power handling ability provided by the embodiments of the present application. Specifically, the abscissa represents the input power (unit: dBm), ranging from -20 dBm to 20 dBm, reflecting the radio frequency signal power input to the switch; the ordinate is divided into two parts. The left vertical axis (unit: dB) represents the power gain (Simulated Power gain), and the right vertical axis (unit: dBm) represents the output power (Simulated Outputpower). Figure 10 contains two curves. The blue curve represents the simulated power gain. As the input power increases, the power gain remains stable at low power but gradually decreases at high power, indicating that the switch enters the non-linear working region; the orange curve represents the simulated output power. As the input power increases, the output power increases linearly until it reaches the saturation point, indicating the power handling ability limit of the switch. By Figure 10 it can be seen that the asymmetric single-pole double-throw switch with high-power handling ability provided by the embodiments of the present application has good power handling ability within the E-band, and can maintain low insertion loss and good signal transmission efficiency under high-power input.

[0108] The embodiments described in the embodiments of the present application are for more clearly illustrating the technical solutions of the embodiments of the present application, and do not constitute a limitation on the technical solutions provided by the embodiments of the present application. Those skilled in the art know that with the evolution of technology and the emergence of new application scenarios, the technical solutions provided by the embodiments of the present application are equally applicable to similar technical problems.

[0109] In the description of the present application, it should be understood that the orientation or positional relationship indicated by terms related to orientation, such as up and down, is based on the orientation or positional relationship shown in the drawings. This is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, it should not be construed as a limitation to the present application.

[0110] In the description of the present application, "a plurality of" means two or more. If the first and second are described, it is only for the purpose of distinguishing technical features, and should not be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features or implicitly specifying the sequence of the indicated technical features.

[0111] In the description of the present application, unless otherwise clearly defined, terms such as "arrangement", "installation", and "connection" should be understood in a broad sense. Those skilled in the art can reasonably determine the specific meanings of the above terms in the present application in combination with the specific content of the technical solution.

[0112] The preferred embodiments of the embodiments of the present application have been described above with reference to the drawings. However, this does not limit the scope of the rights of the embodiments of the present application. Any modifications, equivalent replacements, and improvements made by those skilled in the art without departing from the scope and essence of the embodiments of the present application shall fall within the scope of the rights of the embodiments of the present application.

Claims

1. An asymmetric single-pole double-throw switch with high power handling capacity, characterized in that Comprising: A receiving branch, the receiving branch includes a first coupling coil, a second coupling coil and a first control unit. The first coupling coil is coupled to the second coupling coil. The first coupling coil is provided with a first port and a fourth port, the second coupling coil is provided with a second port and a third port. The first port and the second port are coupled, the fourth port and the third port are coupled. The first port is in an open state, the second port is used to be electrically connected to an antenna unit, the third port is electrically connected to the first control unit, the first control unit is used to control the conduction state of the third port, and the fourth port is used to be connected to a signal receiving unit; A transmitting branch, the transmitting branch includes a third coupling coil, a fourth coupling coil and a second control unit. The third coupling coil is coupled to the fourth coupling coil. The third coupling coil is provided with a fifth port and an eighth port, the fourth coupling coil is provided with a sixth port and a seventh port. The fifth port and the sixth port are coupled, the eighth port and the seventh port are coupled. The fifth port is electrically connected to the second control unit, the sixth port is used to be electrically connected to an antenna unit, the seventh port is in a grounded state, the second control unit is used to control the conduction state of the fifth port, and the eighth port is used to be connected to a signal transmitting unit.

2. The non-symmetric single-pole double-throw switch with high power handling capability according to claim 1, characterized in that, The first control unit includes a first MOS transistor, the source of the first MOS transistor is grounded, the gate of the MOS transistor is electrically connected to a first control power supply, and the drain of the MOS transistor is electrically connected to the third port.

3. The non-symmetric single-pole double-throw switch with high power handling capacity according to claim 1, characterized in that, The second control unit includes a second MOS transistor, the source of the second MOS transistor is grounded, the gate of the second MOS transistor is electrically connected to a second control power supply, and the drain of the second MOS transistor is electrically connected to the fifth port.

4. The asymmetric single-pole double-throw switch with high power handling capacity according to any one of claims 1 to 3, characterized in that In the receiving mode, the first control unit is used to control the conduction state of the third port to be conductive, the second control unit is used to control the conduction state of the fifth port to be conductive, and the receiving branch is used to transmit a signal from the second port to the fourth port.

5. The asymmetric single-pole double-throw switch with high power handling capacity according to any one of claims 1 to 3, characterized in that In the transmitting mode, the first control unit is used to control the conduction state of the third port to be cutoff, the second control unit is used to control the conduction state of the fifth port to be cutoff, and the transmitting branch is used to transmit a signal from the eighth port to the sixth port.

6. The non-symmetrical single-pole double-throw switch with high power handling capability according to claim 4, characterized in that, In the receiving mode, the first voltage value of the fifth port is less than the second voltage value of the sixth port.

7. The asymmetric single-pole double-throw switch with high power handling capability according to claim 1, characterized in that, The operating frequency range of the asymmetric single-pole double-throw switch with high power handling capacity is from 70 GHz to 110 GHz.

8. The non-symmetrical single-pole double-throw switch with high power handling ability according to claim 1, wherein The signal receiving unit is used to receive E-band signals.

9. The non - symmetric single - pole double - throw switch with high - power processing ability according to claim 1, characterized in that, The asymmetric single-pole double-throw switch with high power handling capacity has a metal wall structure.

10. The asymmetric single-pole double-throw switch with high power handling capability according to claim 9, characterized in that, The first coupling coil, the second coupling coil, the third coupling coil, and the fourth coupling coil are disposed in a local interconnect dielectric layer in the metal wall structure.

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