Mask and method for manufacturing mask

Abstract

The mask includes a metal layer. The metal layer includes a third surface, a fourth surface located on the opposite side of the third surface, and a plurality of second openings penetrating from the third surface to the fourth surface. The metal layer includes an effective region in which a plurality of second openings are formed, and a peripheral region surrounding the effective region. The peripheral region has a dummy region that is adjacent to the effective region and surrounds the effective region in a circumferential shape. A plurality of recesses recessed from the fourth surface to the third surface are formed in the dummy region.

Description

Technical Field

[0001] Embodiments of the present disclosure relate to a mask and a method for manufacturing the mask. Background Art

[0002] As a method for forming a precise pattern, a vapor deposition method is known. In the vapor deposition method, first, a mask having an opening is combined with a substrate. Next, a vapor deposition material is attached to the substrate through the opening of the mask. Thereby, a vapor deposition layer containing the vapor deposition material can be formed on the substrate in a pattern corresponding to the pattern of the mask opening. The vapor deposition method is used, for example, as a method for forming pixels of an organic EL display device.

[0003] For example, JP2021-172879A discloses a vapor deposition mask including a metal layer having the above-described opening. In JP2021-172879A, the metal layer is formed by a plating method. In this method, first, a plurality of resin protrusions are formed on a seed layer in a pattern corresponding to the pattern of the opening. Next, metal is deposited on the seed layer having the resin protrusions by a plating method. Thereby, a metal layer having an opening in a portion where the resin protrusions are arranged is formed.

[0004] The vapor deposition mask requires the size of the opening to be uniform. In JP2021-172879A, by making the shape of the resin protrusion a frustum of a pyramid or a frustum of a cone, the opening of the metal layer is conical. In this case, if the thickness of the metal layer is not uniform, the size of the opening deviates. However, when the metal layer is formed by a plating method, there is a problem that the thickness of the metal layer becomes non-uniform in the region having the opening.

[0005] An object of embodiments of the present disclosure is to manufacture a mask that can effectively solve such problems. Summary of the Invention

[0006] A mask according to an embodiment of the present disclosure may include:

[0007] a first layer including a first surface, a second surface opposite to the first surface, and at least one first opening penetrating from the first surface to the second surface; and

[0008] a metal layer including a third surface facing the second surface, a fourth surface opposite to the third surface, and a plurality of second openings penetrating from the third surface to the fourth surface and overlapping the first opening in a top view,

[0009] the first layer may include silicon or a silicon compound,

[0010] the metal layer may include an effective region in which the plurality of second openings are formed and a peripheral region surrounding the effective region,

[0011] The above-mentioned peripheral region may have a dummy region, which is adjacent to the above-mentioned peripheral region and surrounds the peripheral region in a circumferential shape, and a plurality of recesses are formed that are recessed from the above-mentioned fourth surface toward the above-mentioned third surface.

[0012] A method for manufacturing a mask according to an embodiment of the present disclosure may include the following steps:

[0013] A step of preparing a laminate, the laminate including a first layer and a seed layer, the first layer including a first surface and a second surface located on the opposite side of the first surface, and the seed layer including a fifth surface facing the second surface and a sixth surface located on the opposite side of the fifth surface;

[0014] A step of disposing a first resist layer including a positive resist on the sixth surface of the seed layer;

[0015] A step of exposing and developing the first resist layer to form a plurality of resist protrusions protruding from the sixth surface in a third region and a fourth region surrounding the third region on the sixth surface;

[0016] A step of performing a first plating process, in which metal is deposited on the sixth surface where the plurality of resist protrusions are formed in the third region and the fourth region to form a first metal layer having a plurality of openings corresponding to the plurality of resist protrusions;

[0017] A step of removing the resist protrusions in the fourth region;

[0018] A step of performing a second plating process, in which, after removing the resist protrusions in the fourth region, a second metal layer is deposited on the first metal layer and the sixth surface to form a second metal layer that plugs the openings in the fourth region;

[0019] A step of removing the resist protrusions in the third region after the second plating process;

[0020] A step of locally forming a second resist layer on the first surface of the first layer; and

[0021] A step of forming a first opening in the first layer by etching the first layer from the first surface side,

[0022] The resist protrusions in the third region may have a tapered surface that narrows inward as it moves away from the sixth surface.

[0023] According to an embodiment of the present disclosure, it is possible to make the size of the second opening of the metal layer more uniform. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 It is a cross-sectional view showing an example of a machine device.

[0025] Figure 2 It is a view showing an example of an evaporation apparatus equipped with a mask.

[0026] Figure 3A It is a top view showing an example of the mask when viewed from the incident surface side.

[0027] Figure 3B It is a top view showing a modified example of the mask when viewed from the incident surface side.

[0028] Figure 3C It is a top view showing a modified example of the mask when viewed from the incident surface side.

[0029] Figure 4 It is a top view showing an example of the mask when viewed from the exit surface side.

[0030] Figure 5A It is a view that Figure 3A magnifies and shows the part surrounded by the double-dashed line.

[0031] Figure 5B It is a view that Figure 4 magnifies and shows the part surrounded by the double-dashed line.

[0032] Figure 6A It is a view showing Figure 3A the cross-section of the mask shown along line VI-VI.

[0033] Figure 6B It is a view that Figure 6A magnifies and shows the part surrounded by the double-dashed line.

[0034] Figure 7 It is a cross-sectional view showing a process of the mask manufacturing method.

[0035] Figure 8 It is a cross-sectional view showing a process of the mask manufacturing method.

[0036] Figure 9A It is a cross-sectional view showing a process of the mask manufacturing method.

[0037] Figure 9B It is a view that Figure 9A magnifies and shows the part surrounded by the double-dashed line.

[0038] Figure 9C It is a view that Figure 9A shows the resist convex portion and the intermediate layer together as a top view.

[0039] Figure 9D It is a view that Figure 9CThe figure shows an enlarged view of the portion enclosed by the chain double-dashed line.

[0040] Figure 10 It is a cross-sectional view showing one step of a method for manufacturing a mask.

[0041] Figure 11 It is a cross-sectional view showing one step of a method for manufacturing a mask.

[0042] Figure 12A It is a cross-sectional view showing one step of a method for manufacturing a mask.

[0043] Figure 12B It is a figure that Figure 12A shows an enlarged view of the portion enclosed by the chain double-dashed line.

[0044] Figure 13 It is a cross-sectional view showing one step of a method for manufacturing a mask.

[0045] Figure 14 It is a cross-sectional view showing one step of a method for manufacturing a mask.

[0046] Figure 15 It is a cross-sectional view showing one step of a method for manufacturing a mask.

[0047] Figure 16 It is a cross-sectional view showing one step of a method for manufacturing a mask.

[0048] Figure 17 It is a cross-sectional view showing one step of a method for manufacturing a mask.

[0049] Figure 18 It is a cross-sectional view showing one step of a method for manufacturing a mask.

[0050] Figure 19 It is a cross-sectional view showing one step of a method for manufacturing a mask.

[0051] Figure 20 It is a top view showing a modified example of a mask corresponding to Figure 4

[0052] Figure 21 It is a figure showing Figure 20 a part of the cross-section along the line XXI-XXI of the mask shown.

[0053] Figure 22 It is a cross-sectional view showing a modified example of a mask corresponding to Figure 6A

[0054] Figure 23 It is a figure showing an example of a device having a machine component. Detailed Description

[0055] Hereinafter, the configuration and manufacturing method of a mask according to an embodiment will be described in detail with reference to the accompanying drawings. It should be noted that the embodiments shown below are examples of the embodiments of the present disclosure, and the present disclosure is not construed as being limited to these embodiments. In this specification, terms such as "plate", "substrate", "sheet", "film" are not distinguished from each other only based on the difference in name. For example, "plate" is a concept that also includes members that can be called sheets or films. "Surface" refers to the surface that is consistent with the planar direction of the member being observed as a whole and globally. The normal direction refers to the normal direction with respect to the surface of the member. Regarding terms such as "parallel", "orthogonal", etc., and values of lengths, angles, etc. used in this specification for shapes, geometric conditions, and the degree of determining them, they are not limited to strict meanings and are interpreted to include ranges that can be expected to have the same functions.

[0056] In this specification and the accompanying drawings, unless otherwise specified, it includes cases where a certain structure such as a certain member or a certain region is "above", "below", "upper side", "lower side", or "above", "below" another member or another region such as another structure, and cases where a certain structure is in direct contact with another structure. Further, it also includes cases where other structures are included between a certain structure and another structure, that is, cases of indirect connection. In addition, unless otherwise specified, the up-down directions of statements such as "above", "upper side", "above", or "below", "lower side", "below" can also be reversed.

[0057] In this specification and the accompanying drawings, unless otherwise specified, the same reference numerals or similar reference numerals may sometimes be assigned to the same part or parts having the same function, and the repeated description thereof is omitted. In addition, for the sake of convenience in explanation, the dimensional ratios of the drawings are sometimes different from the actual ratios, and sometimes a part of the structure is omitted from the drawings.

[0058] In this specification and the accompanying drawings, unless otherwise specified, the embodiments of the present disclosure can also be combined with other embodiments and modification examples within a non-contradictory range. In addition, other embodiments can be combined with each other, and other embodiments can be combined with modification examples within a non-contradictory range. In addition, modification examples can be combined with each other within a non-contradictory range.

[0059] In this specification and the accompanying drawings, unless otherwise specified, when a plurality of processes are disclosed regarding a manufacturing method or the like, other processes not disclosed can also be implemented between the disclosed processes. In addition, the order of the disclosed processes is arbitrary within a non-contradictory range.

[0060] In one embodiment of the present specification, an example of a mask used for forming an organic layer or an electrode on a substrate in the manufacture of an organic EL display device will be described. However, the use of the mask is not particularly limited, and this embodiment can be applied to masks for various uses. For example, in order to form organic layers, electrodes, and other layers of a device for displaying or projecting images and videos for expressing virtual reality (VR) or augmented reality (AR), the mask of this embodiment can also be used. In addition, in order to form layers of a display device other than an organic EL display device, such as an electrode of a liquid crystal display device, the mask of this embodiment can also be used. In addition, in order to form layers of an organic device other than a display device, such as an organic layer and an electrode of a pressure sensor, the mask of this embodiment can also be used.

[0061] A first aspect of the present disclosure is a mask, which includes:

[0062] A first layer, the first layer includes a first surface, a second surface located on the opposite side of the first surface, and at least one first opening penetrating from the first surface to the second surface; and

[0063] A metal layer, the metal layer includes a third surface facing the second surface, a fourth surface located on the opposite side of the third surface, and a plurality of second openings penetrating from the third surface to the fourth surface and overlapping the first opening in a top view,

[0064] The first layer includes silicon or a silicon compound,

[0065] The metal layer includes an effective region in which the plurality of second openings are formed, and a peripheral region surrounding the effective region,

[0066] The peripheral region has a dummy region, the dummy region is adjacent to the effective region and surrounds the effective region in a circumferential shape, and a plurality of recesses recessed from the fourth surface to the third surface are formed.

[0067] In the mask according to the second aspect based on the first aspect, a seed layer may be included between the second surface and the third surface.

[0068] In the mask according to the third aspect based on the second aspect, the seed layer may be conductive.

[0069] In the mask according to the fourth aspect based on any one of the first aspect to the third aspect, a barrier layer may be included between the second surface and the third surface.

[0070] In the mask according to the fifth aspect based on any one of the first aspect to the fourth aspect,

[0071] The second opening may be defined by a wall surface connecting the third surface and the fourth surface,

[0072] The above-mentioned wall surface may include a conical surface that expands outward as it faces the above-mentioned fourth surface.

[0073] In the mask of the sixth mode according to any one of the above-mentioned first mode to the fifth mode, the width of the above-mentioned dummy region may be 0.6 mm or more.

[0074] In the mask of the seventh mode according to any one of the above-mentioned first mode to the sixth mode, the number of the above-mentioned recesses per unit area in the above-mentioned dummy region may be 0.7 times or more and 1.3 times or less the number of the above-mentioned second openings per unit area in the above-mentioned effective region.

[0075] In the mask of the eighth mode according to any one of the above-mentioned first mode to the seventh mode, the pitch of the above-mentioned recesses may be 0.7 times or more and 1.3 times or less the pitch of the above-mentioned second openings.

[0076] In the mask of the ninth mode according to any one of the above-mentioned first mode to the eighth mode, the interval between the outermost peripheral side of the above-mentioned second opening located in the above-mentioned effective region and the above-mentioned recess closest to the above-mentioned second opening may be 0.7 times or more and 1.3 times or less the pitch of the above-mentioned second openings.

[0077] In the mask of the tenth mode according to any one of the above-mentioned first mode to the ninth mode,

[0078] the thickness of the above-mentioned metal layer may be 2 μm or more and 7 μm or less,

[0079] the above-mentioned recess may extend from the above-mentioned fourth surface to a part of the thickness of the above-mentioned metal layer,

[0080] the thickness of the bottom of the above-mentioned recess may be 0.5 μm or more and 1.5 μm or less.

[0081] The eleventh mode of the present disclosure is a method for manufacturing a mask, which includes the following steps:

[0082] A step of preparing a laminate, the laminate including a first layer and a seed layer, the first layer including a first surface and a second surface located on the opposite side of the first surface, and the seed layer including a fifth surface facing the second surface and a sixth surface located on the opposite side of the fifth surface;

[0083] A step of providing a first resist layer including a positive resist on the sixth surface of the above-mentioned seed layer;

[0084] A step of exposing and developing the above-mentioned first resist layer to form a plurality of resist protrusions protruding from the sixth surface in a third region on the sixth surface and a fourth region surrounding the third region;

[0085] A step of performing a first plating process, in which metal is deposited on the sixth surface where the plurality of resist protrusions are formed in the third region and the fourth region, to form a first metal layer having a plurality of openings corresponding to the plurality of resist protrusions;

[0086] A step of removing the resist protrusions located in the fourth region;

[0087] A step of removing the resist protrusions located in the third region;

[0088] A step of locally forming a second resist layer on the first surface of the first layer; and

[0089] A step of forming a first opening in the first layer by etching the first layer from the first surface side,

[0090] The resist protrusions located in the third region have a tapered surface that narrows inward as it moves away from the sixth surface.

[0091] In the method for manufacturing a mask according to the twelfth aspect based on the eleventh aspect,

[0092] After the step of removing the resist protrusions located in the fourth region and before the step of removing the resist protrusions located in the third region, a step of performing a second plating process may be included. In the second plating process, a second metal layer is deposited on the first metal layer and the sixth surface to form a second metal layer that blocks at least a part of the openings located in the fourth region.

[0093] In the method for manufacturing a mask according to the thirteenth aspect based on the twelfth aspect,

[0094] The seed layer may be conductive,

[0095] The first plating process and the second plating process may be electrolytic plating processes.

[0096] In the method for manufacturing a mask according to the fourteenth aspect based on any one of the eleventh aspect to the thirteenth aspect, after the step of forming the first opening in the first layer, a step of removing the seed layer that overlaps the first opening in a top view may be included.

[0097] In the method for manufacturing a mask according to the fifteenth aspect based on any one of the eleventh aspect to the fourteenth aspect,

[0098] The laminate may include a barrier layer between the first layer and the seed layer,

[0099] The method for manufacturing the above mask may include a step of removing the above barrier layer after the step of forming the above first opening in the above first layer.

[0100] In the method for manufacturing a mask according to the 16th aspect based on the above 12th aspect or the above 13th aspect, the following steps may be included:

[0101] A step of forming a protective layer covering the above second metal layer after the above second plating process and before the above first opening is formed; and

[0102] A step of removing the above protective layer after the above first opening is formed in the above first layer.

[0103] In the method for manufacturing a mask according to the 17th aspect based on any one of the above 11th aspect to the above 16th aspect, the width of the above fourth region may be 0.6 mm or more.

[0104] In the method for manufacturing a mask according to the 18th aspect based on any one of the above 12th aspect, the above 13th aspect or the above 16th aspect,

[0105] the thickness of the above first metal layer may be 0.5 μm or more and 6.5 μm or less,

[0106] the thickness of the above second metal layer may be 0.5 μm or more and 1.5 μm or less.

[0107] Refer to Figures 1 to 23 , and one embodiment will be described. First, an organic device 100 including an organic layer formed by using a mask will be described. Figure 1 It is a cross-sectional view showing an example of the organic device 100.

[0108] The organic device 100 includes a substrate 110 and a plurality of elements 115 arranged in the in-plane direction of the substrate 110. The substrate 110 includes a first surface 111 and a second surface 112 located on the opposite side of the first surface 111. The elements 115 are located on the first surface 111. The elements 115 are, for example, pixels. The substrate 110 may include two or more types of elements 115. For example, the substrate 110 may include a first element 115A and a second element 115B. Although not shown, the substrate 110 may also include a third element. The first element 115A, the second element 115B, and the third element are, for example, a red pixel, a blue pixel, and a green pixel.

[0109] The element 115 may have a first electrode 120, an organic layer 130 located on the first electrode 120, and a second electrode 140 located on the organic layer 130.

[0110] The organic device 100 may include an insulating layer 160 that, when viewed from above, is located between two adjacent first electrodes 120. The insulating layer 160 includes, for example, polyimide. The insulating layer 160 may overlap with the end portions of the first electrodes 120. "Viewed from above" means observing an object along the normal direction of the plane of a plate-like member such as the substrate 110.

[0111] The substrate 110 may be a member having insulating properties. As the material of the substrate 110, for example, rigid materials without flexibility such as silicon, quartz glass, Pyrex (registered trademark) glass, and synthetic quartz plates, or flexible materials with flexibility such as resin films, optical resin plates, and thin glass may be used. The substrate 110 may have the same planar shape as a silicon wafer used in semiconductor manufacturing. In this case, a device for implementing semiconductor manufacturing processes can be used to process the substrate 110. For example, a device for implementing semiconductor manufacturing processes can be used to form the first electrodes 120, the insulating layer 160, etc. on the substrate 110.

[0112] The element 115 is configured to achieve a certain function by applying a voltage between the first electrode 120 and the second electrode 140 or by passing a current between the first electrode 120 and the second electrode 140. For example, when the element 115 is a pixel of an organic EL display device, the element 115 can emit light that constitutes an image.

[0113] The first electrode 120 includes a conductive material. For example, the first electrode 120 includes a metal, a conductive metal oxide, or other conductive inorganic materials. The first electrode 120 may include a metal oxide such as indium tin oxide that has transparency and conductivity.

[0114] The organic layer 130 includes an organic material. When the organic layer 130 is energized, the organic layer 130 can perform certain functions. Energizing means applying a voltage to the organic layer 130 or a current flowing through the organic layer 130. As the organic layer 130, a light-emitting layer that emits light when energized, a layer whose light transmittance and refractive index change when energized, etc. can be used. The organic layer 130 may include an organic semiconductor material.

[0115] As Figure 1 shown, the organic layer 130 may include a first organic layer 130A and a second organic layer 130B. The first organic layer 130A is included in the first element 115A. The second organic layer 130B is included in the second element 115B. Although not shown, the organic layer 130 may also include a third organic layer included in a third element. The first organic layer 130A, the second organic layer 130B, and the third organic layer are, for example, a red light-emitting layer, a blue light-emitting layer, and a green light-emitting layer.

[0116] When a voltage is applied between the first electrode 120 and the second electrode 140, the organic layer 130 located therebetween is driven. When the organic layer 130 is a light-emitting layer, light is emitted from the organic layer 130, and the light is extracted to the outside from the second electrode 140 side or the first electrode 120 side.

[0117] The organic layer 130 may further include a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, and the like.

[0118] The second electrode 140 may include a conductive material such as a metal. As the material of the second electrode 140, for example, platinum, gold, silver, copper, iron, tin, chromium, aluminum, indium, lithium, sodium, potassium, calcium, magnesium, chromium, carbon, etc. and their alloys can be used. As Figure 1 shown, the second electrode 140 may also extend in a manner that straddles two adjacent organic layers 130 in a plan view.

[0119] Next, a method of forming the organic layer 130 on the substrate 110 by a vapor deposition method will be described. Figure 2 FIG. is a diagram showing the vapor deposition apparatus 10. The vapor deposition apparatus 10 performs a vapor deposition process of vapor-depositing a vapor deposition material onto an object.

[0120] As Figure 2 shown, the vapor deposition apparatus 10 may include a vapor deposition source 6, a heater 8, and a mask 20 inside thereof. The vapor deposition apparatus 10 may further include an exhaust unit for making the inside of the vapor deposition apparatus 10 a vacuum atmosphere. The vapor deposition source 6 is, for example, a crucible. The vapor deposition source 6 stores vapor deposition materials 7 such as organic materials and metal materials. The heater 8 heats the vapor deposition source 6 to evaporate the vapor deposition material 7 in a vacuum atmosphere.

[0121] The mask 20 includes an incident surface 201, an exit surface 202, and a second opening 41. The incident surface 201 faces the vapor deposition source 6. The exit surface 202 is located on the opposite side of the incident surface 201. The exit surface 202 faces the first surface 111 of the substrate 110. A part of the vapor deposition material 7 that enters the mask 20 from the exit surface 202 comes out of the exit surface 202 through the second opening 41. The vapor deposition material 7 that comes out of the exit surface 202 adheres to the first surface 111 of the substrate 110. The exit surface 202 of the mask 20 may be in contact with the first surface 111 of the substrate 110.

[0122] As Figure 2As shown, the evaporation apparatus 10 may include a magnet 5 disposed on the second surface 112 side of the substrate 110. When the mask 20 contains a metal material, the magnet 5 can attract the mask 20 to the substrate 110 by magnetic force. Thereby, the gap between the mask 20 and the substrate 110 can be reduced or eliminated. Thereby, it is possible to suppress the generation of shadows in the evaporation process. In the present application, a shadow refers to a phenomenon in which the thickness of the organic layer 130 formed near the wall surface of the second opening 41 is smaller than the thickness of the organic layer 130 formed at the center of the second opening 41. Shadows are caused by the evaporation material 7 adhering to the wall surface of the mask 20, the evaporation material 7 entering the gap between the mask 20 and the substrate 110, and the like.

[0123] Next, the mask 20 will be described in detail. Figure 3A It is a plan view showing an example of the mask 20 when viewed from the incident surface 201 side. Figure 4 It is a plan view showing an example of the mask 20 when viewed from the exit surface 202 side. Figure 5A It is Figure 3A The part surrounded by the double-dashed line of Figure 5B is enlarged and shown. In addition, Figure 4 The part surrounded by the double-dashed line of Figure 6A is Figure 3A The cross-sectional view of the mask 20 along the line VI-VI of Figure 6B It is Figure 6A The part surrounded by the double-dashed line of

[0124] As Figure 6A shown, the mask 20 includes a first layer 30, an intermediate layer 50, and a metal layer 40 arranged in sequence from the incident surface 201 to the exit surface 202. The first layer 30 contains silicon or a silicon compound. The silicon compound is, for example, silicon carbide (SiC). The metal layer 40 contains a metal material. Hereinafter, each layer will be described.

[0125] The first layer 30 includes a first surface 301, a second surface 302, a first opening 31, and a first wall surface 32. The first surface 301 may constitute the incident surface 201. The second surface 302 is located on the opposite side of the first surface 301.

[0126] The first opening 31 penetrates from the first surface 301 to the second surface 302. As Figure 3A shown, the first layer 30 may include a plurality of first openings 31. The plurality of first openings 31 may be arranged in a first direction D1 and a second direction D2. The second direction D2 may be orthogonal to the first direction D1.

[0127] The first opening 31 may correspond to one picture of the organic EL display device. Figure 3AThe mask 20 shown can simultaneously form patterns of organic layers corresponding to a plurality of images on the substrate 110. As Figure 3A shown, the first opening 31 may have a rectangular profile in a plan view.

[0128] Figure 3B and Figure 3C are plan views showing other examples of the mask 20. As Figure 3B shown, the corners of the profile of the first opening 31 may include curves. As Figure 3C shown, the profile of the first opening 31 may be octagonal. According to Figure 3B and Figure 3C shown in the example, when stress is applied to the profile of the first opening 31, stress concentration at the corners can be suppressed. Therefore, breakage of the first layer 30 can be suppressed.

[0129] The first wall surface 32 is the surface of the first layer 30 facing the first opening 31. In Figure 3A the example shown, the first wall surface 32 extends along the normal direction of the first surface 301.

[0130] As Figure 3A shown, the region of the first layer 30 where the first opening 31 is not formed may be divided into an outer region 35 and an inner region 36. The inner region 36 is the region located between two adjacent first openings 31 in a plan view. The outer region 35 is the region located between the outer edge 303 of the first layer 30 and the first opening 31 in a plan view. As Figure 3A shown, the inner region 36 can extend in the first direction D1 and the second direction D2 through between two first openings 31.

[0131] As Figure 3A and Figure 4 shown, the first layer 30 may include alignment marks 39. The alignment marks 39 are formed, for example, on the second surface 302. The alignment marks 39 may also be formed on the first surface 301. The alignment marks 39 are used, for example, to adjust the relative position of the substrate 110 with respect to the mask 20. When the substrate 110 has the property of transmitting visible light, the alignment marks 39 can be visually recognized through the substrate 110. When the substrate 110 has the property of transmitting infrared rays, the alignment marks 39 can be visually recognized through the substrate 110 by using an infrared camera.

[0132] As Figure 3A and Figure 4 shown, the alignment marks 39 may have a circular profile in a plan view. Although not shown, the alignment marks 39 may also have a profile other than a circle, such as a rectangle or a cross. The alignment marks 39 may be located in the outer region 35 or may be located in the inner region 36.

[0133] As described above, the first layer 30 contains silicon or a silicon compound. The first layer 30 is fabricated, for example, by processing a silicon wafer. As Figure 3A shown, the outer edge 303 of the first layer 30 may include a linear portion. The linear portion is also referred to as a flat. Although not shown, a notch may be formed in the outer edge 303. The notch is also referred to as a dimple. The flat and the notch indicate the crystal orientation of the silicon wafer.

[0134] The maximum size S1 of the first layer 30 in a top view may be, for example, 100 mm or more, may be 150 mm or more, or may be 250 mm or more. The size S1 may be, for example, 300 mm or less, may be 400 mm or less, or may be 500 mm or less. The range of the size S1 may be determined by a first group consisting of 100 mm, 150 mm, and 250 mm, and / or a second group consisting of 300 mm, 400 mm, and 500 mm. The range of the size S1 may also be determined by a combination of any value included in the first group and any value included in the second group. The range of the size S1 may also be determined by a combination of any two values included in the first group. The range of the size S1 may also be determined by a combination of any two values included in the second group. The size S1 may be, for example, 100 mm or more and 500 mm or less, may be 100 mm or more and 400 mm or less, may be 100 mm or more and 300 mm or less, may be 100 mm or more and 250 mm or less, may be 100 mm or more and 150 mm or less, may be 150 mm or more and 500 mm or less, may be 150 mm or more and 400 mm or less, may be 150 mm or more and 300 mm or less, may be 150 mm or more and 250 mm or less, may be 250 mm or more and 500 mm or less, may be 250 mm or more and 400 mm or less, may be 250 mm or more and 300 mm or less, may be 300 mm or more and 500 mm or less, may be 300 mm or more and 400 mm or less, or may be 400 mm or more and 500 mm or less.

[0135] The size S2 of the first opening 31 in the direction in which the first opening 31 is arranged may be, for example, 5 mm or more, may be 10 mm or more, or may be 20 mm or more. The size S2 may be, for example, 30 mm or less, may be 50 mm or less, or may be 100 mm or less. The range of the size S2 may be determined by a first group consisting of 5 mm, 10 mm, and 20 mm, and / or a second group consisting of 30 mm, 50 mm, and 100 mm. The range of the size S2 may also be determined by a combination of any value included in the first group and any value included in the second group. The range of the size S2 may also be determined by a combination of any two values included in the first group. The range of the size S2 may also be determined by a combination of any two values included in the second group. The size S2 may be, for example, 5 mm or more and 100 mm or less, may be 5 mm or more and 50 mm or less, may be 5 mm or more and 30 mm or less, may be 5 mm or more and 20 mm or less, may be 5 mm or more and 10 mm or less, may be 10 mm or more and 100 mm or less, may be 10 mm or more and 50 mm or less, may be 10 mm or more and 30 mm or less, may be 10 mm or more and 20 mm or less, may be 20 mm or more and 100 mm or less, may be 20 mm or more and 50 mm or less, may be 20 mm or more and 30 mm or less, may be 30 mm or more and 100 mm or less, may be 30 mm or more and 50 mm or less, or may be 50 mm or more and 100 mm or less.

[0136] The interval S3 between two first openings 31 in the direction in which the first openings 31 are arranged may be, for example, 0.1 mm or more, may be 0.5 mm or more, or may be 1.0 mm or more. The interval S3 may be, for example, 10 mm or less, may be 15 mm or less, or may be 20 mm or less. The range of the interval S3 may be determined by a first group composed of 0.1 mm, 0.5 mm, and 1.0 mm, and / or a second group composed of 10 mm, 15 mm, and 20 mm. The range of the interval S3 may also be determined by a combination of any one of the values included in the first group and any one of the values included in the second group. The range of the interval S3 may also be determined by a combination of any two of the values included in the first group. The range of the interval S3 may also be determined by a combination of any two of the values included in the second group. The interval S3 may be, for example, 0.1 mm or more and 20 mm or less, may be 0.1 mm or more and 15 mm or less, may be 0.1 mm or more and 10 mm or less, may be 0.1 mm or more and 1.0 mm or less, may be 0.1 mm or more and 0.5 mm or less, may be 0.5 mm or more and 20 mm or less, may be 0.5 mm or more and 15 mm or less, may be 0.5 mm or more and 10 mm or less, may be 0.5 mm or more and 1.0 mm or less, may be 1.0 mm or more and 20 mm or less, may be 1.0 mm or more and 15 mm or less, may be 1.0 mm or more and 10 mm or less, may be 10 mm or more and 20 mm or less, may be 10 mm or more and 15 mm or less, or may be 15 mm or more and 20 mm or less.

[0137] The thickness of the first layer 30 is defined as the maximum thickness T1 of the outer region 35. The thickness T1 can be, for example, 50 μm or more, 100 μm or more, or 200 μm or more. The thickness T1 can be, for example, 600 μm or less, 800 μm or less, or 1000 μm or less. The range of the thickness T1 can be determined by the first group consisting of 50 μm, 100 μm, and 200 μm, and / or the second group consisting of 600 μm, 800 μm, and 1000 μm. The range of the thickness T1 can also be determined by a combination of any one value included in the first group and any one value included in the second group. The range of the thickness T1 can also be determined by a combination of any two values included in the first group. The range of the thickness T1 can also be determined by a combination of any two values included in the second group. The thickness T1 can be, for example, 50 μm or more and 1000 μm or less, 50 μm or more and 800 μm or less, 50 μm or more and 600 μm or less, 50 μm or more and 200 μm or less, 50 μm or more and 100 μm or less, 100 μm or more and 1000 μm or less, 100 μm or more and 800 μm or less, 100 μm or more and 600 μm or less, 100 μm or more and 200 μm or less, 200 μm or more and 1000 μm or less, 200 μm or more and 800 μm or less, 200 μm or more and 600 μm or less, 600 μm or more and 1000 μm or less, 600 μm or more and 800 μm or less, or 800 μm or more and 1000 μm or less.

[0138] Next, the metal layer 40 will be described. The metal layer 40 includes a third surface 401, a fourth surface 402, a plurality of second openings 41, and a plurality of recesses 43. The third surface 401 faces the second surface 302 of the first layer 30. The fourth surface 402 is located on the opposite side of the third surface 401.

[0139] The second opening 41 penetrates from the third surface 401 to the fourth surface 402. One second opening 41 corresponds to one organic layer 130. A group of regularly arranged plurality of second openings 41 corresponds to one picture of the organic EL display device. As Figure 3A shown, a group of regularly arranged plurality of second openings 41 may also overlap with one first opening 31 in a plan view.

[0140] The metal layer 40 can be divided into a peripheral region 48 (see Figure 4 and Figure 5B ) and an effective region 49 (see Figure 5B)。The effective area 49 is an area where a plurality of second openings 41 are regularly arranged. The peripheral area 48 is an area surrounding the effective area 49. At least a part of the peripheral area 48 is an area that overlaps with the first layer 30 in a top view.

[0141] The peripheral area 48 includes a dummy area 481 (see Figure 5B ) in which a plurality of recesses 43 are formed. The dummy area 481 is adjacent to the effective area 49 and surrounds the effective area 49 in a circumferential shape. The recess 43 is recessed from the fourth surface 402 toward the third surface 401. The width S4 of the dummy area 481 is, for example, 0.6 mm or more, may be 0.7 mm or more, or may be 0.8 mm or more.

[0142] In the illustrated example, in a top view, a part of the dummy area 481 overlaps with the first opening 31. Therefore, this part of the dummy area 481 does not overlap with the first layer 30 in a top view. Of course, it is not limited to this example, and all of the dummy area 481 may overlap with the first layer 30 in a top view.

[0143] Figure 6B shows an example of the effective area 49 and the dummy area 481. The metal layer 40 includes a second wall surface 42 facing the second opening 41. As Figure 6B shown, the second wall surface 42 includes a conical surface 42a that extends in a manner of moving away from the center of the second opening 41 as it faces the third surface 401. By making the second wall surface 42 include the conical surface 42a, it is possible to suppress the generation of shadows near the second wall surface 42.

[0144] Figure 6BIn this case, the symbol S5 represents the width of the conical surface 42a in the direction in which the second opening 41 is arranged. The width S5 can be, for example, 0.2 μm or more, can be 0.5 μm or more, and can also be 1.0 μm or more. The width S5 can be, for example, 10 μm or less, can be 20 μm or less, and can also be 25 μm or less. The range of the width S5 can be determined by the first group consisting of 0.2 μm, 0.5 μm, and 1.0 μm, and / or the second group consisting of 10 μm, 20 μm, and 25 μm. The range of the width S5 can also be determined by a combination of any value included in the first group and any value included in the second group. The range of the width S5 can also be determined by a combination of any two values included in the first group. The range of the width S5 can also be determined by a combination of any two values included in the second group. The width S5 can be, for example, 0.2 μm or more and 25 μm or less, can be 0.2 μm or more and 20 μm or less, can be 0.2 μm or more and 10 μm or less, can be 0.2 μm or more and 1.0 μm or less, can be 0.2 μm or more and 0.5 μm or less, can be 0.5 μm or more and 25 μm or less, can be 0.5 μm or more and 20 μm or less, can be 0.5 μm or more and 10 μm or less, can be 0.5 μm or more and 1.0 μm or less, can be 1.0 μm or more and 25 μm or less, can be 1.0 μm or more and 20 μm or less, can be 1.0 μm or more and 10 μm or less, can be 10 μm or more and 25 μm or less, can be 10 μm or more and 20 μm or less, and can also be 20 μm or more and 25 μm or less.

[0145] Figure 6BIn this case, the symbol θ1 represents the angle formed by the second wall surface 42 and the third surface 401. For example, the angle θ1 can be 50° or more, can be 55° or more, can be 60° or more, or can be 65° or more. For example, the angle θ1 can be 75° or less, can be 80° or less, can be 85° or less, or can be less than 90°. The range of the angle θ1 can be determined by a first group consisting of 50°, 55°, 60°, and 65°, and / or a second group consisting of 75°, 80°, 85°, and 90°. The range of the angle θ1 can also be determined by a combination of any value included in the first group and any value included in the second group. The range of the angle θ1 can also be determined by a combination of any two values included in the first group. The range of the angle θ1 can also be determined by a combination of any two values included in the second group. For example, the angle θ1 can be 50° or more and less than 90°, can be 50° or more and 85° or less, can be 50° or more and 80° or less, can be 50° or more and 75° or less, can be 50° or more and 65° or less, can be 50° or more and 60° or less, can be 50° or more and 55° or less, can be 55° or more and less than 90°, can be 55° or more and 85° or less, can be 55° or more and 80° or less, can be 55° or more and 75° or less, can be 55° or more and 65° or less, can be 55° or more and 60° or less, can be 60° or more and less than 90°, can be 60° or more and 85° or less, can be 60° or more and 80° or less, can be 60° or more and 75° or less, can be 60° or more and 65° or less, can be 65° or more and less than 90°, can be 65° or more and 85° or less, can be 65° or more and 80° or less, can be 65° or more and 75° or less, can be 75° or more and less than 90°, can be 75° or more and 85° or less, can be 75° or more and 80° or less, can be 80° or more and less than 90°, can be 80° or more and 85° or less, or can be 85° or more and less than 90°.

[0146] The recess 43 is defined by a bottom surface 44 and a third wall surface 45 that surrounds the bottom surface 44 in a circumferential shape. In other words, the end portion on the first layer 30 side of the recess 43 is closed by the bottom surface 44. Thereby, when forming a vapor deposition layer on the substrate 110 using the mask 20, it is possible to prevent the vapor deposition material from the vapor deposition source 6 from adhering to the substrate 110 through the recess 43.

[0147] The third wall surface 45 defines an opening 43a of the recess 43 on the fourth surface 402. The third wall surface 45 may include a conical surface 45a that extends in a manner that moves away from the center of the opening 43a as it approaches the third surface 401. The width of the conical surface 45a of the third wall surface 45 may be the same as the width of the conical surface 42a of the second wall surface 42 of the second opening 41. Additionally, the angle formed by the conical surface 45a and the third surface 401 may be the same as the angle θ1 formed by the second wall surface 42 of the second opening 41 and the fourth surface 402.

[0148] As described above, the metal layer 40 contains a metal material. The metal material is nickel, nickel-cobalt alloy, iron-nickel alloy, copper, etc. As will be described later, the metal layer 40 includes a first metal layer 411 and a second metal layer 412. The first metal layer 411 and the second metal layer 412 may contain the same metal material or may contain different metal materials. The metal layer 40 can be formed, for example, by an electroplating method.

[0149] The thickness of the metal layer 40 is defined as the distance T2 between the third surface 401 and the fourth surface 402. The thickness T2 of the metal layer 40 is less than the thickness T1 of the first layer 30. The thickness T2 can be, for example, 2 μm or more, can be 3 μm or more, or can be 4 μm or more. The thickness T2 can be, for example, 5 μm or less, can be 6 μm or less, or can be 7 μm or less. The range of the thickness T2 can be determined by a first group consisting of 2 μm, 3 μm, and 4 μm, and / or a second group consisting of 5 μm, 6 μm, and 7 μm. The range of the thickness T2 can also be determined by a combination of any value included in the first group described above and any value included in the second group described above. The range of the thickness T2 can also be determined by a combination of any two values included in the first group described above. The range of the thickness T2 can also be determined by a combination of any two values included in the second group described above. The thickness T2 can be, for example, 2 μm or more and 7 μm or less, can be 2 μm or more and 6 μm or less, can be 2 μm or more and 5 μm or less, can be 2 μm or more and 4 μm or less, can be 2 μm or more and 3 μm or less, can be 3 μm or more and 7 μm or less, can be 3 μm or more and 6 μm or less, can be 3 μm or more and 5 μm or less, can be 3 μm or more and 4 μm or less, can be 4 μm or more and 7 μm or less, can be 4 μm or more and 6 μm or less, can be 4 μm or more and 5 μm or less, can be 5 μm or more and 7 μm or less, can be 5 μm or more and 6 μm or less, or can be 6 μm or more and 7 μm or less. By making the thickness T2 7 μm or less, the generation of shadows can be suppressed. By making the thickness T2 2 μm or more, defects such as pinholes and deformations in the metal layer 40 can be suppressed.

[0150] In the illustrated example, the recess 43 extends from the fourth surface 402 of the metal layer 40 to a part of the thickness T2 of the metal layer 40. The recess 43 has a bottom 40a formed by a part of the metal layer 40. The bottom 40a of the recess 43 is the region between the bottom surface 44 of the recess 43 in the metal layer 40 and the third surface 401 of the metal layer 40. The thickness of the bottom 40a of the recess 43 is defined as the distance T3 between the bottom surface 44 of the recess 43 and the third surface 401 of the metal layer 40. As described later, the thickness T3 of the bottom 40a of the recess 43 is the thickness of the second metal layer 412. The thickness T3 can be, for example, 0.5 μm or more, can be 0.70 μm or more, and can also be 0.90 μm or more. The thickness T3 can be, for example, 1.0 μm or less, can be 1.25 μm or less, and can also be 1.5 μm or less. The range of the thickness T3 can be determined by the first group consisting of 0.5 μm, 0.70 μm, and 0.90 μm, and / or the second group consisting of 1.0 μm, 1.25 μm, and 1.5 μm. The range of the thickness T3 can also be determined by a combination of any value included in the first group and any value included in the second group described above. The range of the thickness T3 can also be determined by a combination of any two values included in the first group described above. The range of the thickness T3 can also be determined by a combination of any two values included in the second group described above. The thickness T3 can be, for example, 0.5 μm or more and 1.5 μm or less, can be 0.5 μm or more and 1.25 μm or less, can be 0.5 μm or more and 1.0 μm or less, can be 0.5 μm or more and 0.90 μm or less, can be 0.5 μm or more and 0.70 μm or less, can be 0.70 μm or more and 1.5 μm or less, can be 0.70 μm or more and 1.25 μm or less, can be 0.70 μm or more and 1.0 μm or less, can be 0.70 μm or more and 0.90 μm or less, can be 0.90 μm or more and 1.5 μm or less, can be 0.90 μm or more and 1.25 μm or less, can be 0.90 μm or more and 1.0 μm or less, can be 1.0 μm or more and 1.5 μm or less, can be 1.0 μm or more and 1.25 μm or less, and can also be 1.25 μm or more and 1.5 μm or less.

[0151] The size S6 of the second opening 41 when viewed from above can be, for example, 1 μm or more, can be 2 μm or more, and can also be 3 μm or more. The size S6 can be, for example, 5 μm or less, can be 10 μm or less, and can also be 25 μm or less. The range of the size S6 can be determined by the first group composed of 1 μm, 2 μm, and 3 μm, and / or the second group composed of 5 μm, 10 μm, and 25 μm. The range of the size S6 can also be determined by a combination of any one value included in the above first group and any one value included in the above second group. The range of the size S6 can also be determined by a combination of any two values included in the above first group. The range of the size S6 can also be determined by a combination of any two values included in the above second group. The size S6 can be, for example, 1 μm or more and 25 μm or less, can be 1 μm or more and 10 μm or less, can be 1 μm or more and 5 μm or less, can be 1 μm or more and 3 μm or less, can be 1 μm or more and 2 μm or less, can be 2 μm or more and 25 μm or less, can be 2 μm or more and 10 μm or less, can be 2 μm or more and 5 μm or less, can be 2 μm or more and 3 μm or less, can be 3 μm or more and 25 μm or less, can be 3 μm or more and 10 μm or less, can be 3 μm or more and 5 μm or less, can be 5 μm or more and 25 μm or less, can be 5 μm or more and 10 μm or less, and can also be 10 μm or more and 25 μm or less.

[0152] The pitch of the second openings 41 refers to the distance P1 between the centers of two adjacent second openings 41 in the direction in which the two second openings 41 are arranged. The pitch P1 of the second openings 41 can be, for example, 1 μm or more, can be 2 μm or more, and can also be 3 μm or more. The pitch P1 can be, for example, 5 μm or less, can be 10 μm or less, and can also be 25 μm or less. The range of the pitch P1 can be determined by a first group composed of 1 μm, 2 μm, and 3 μm, and / or a second group composed of 5 μm, 10 μm, and 25 μm. The range of the pitch P1 can also be determined by a combination of any value included in the first group and any value included in the second group. The range of the pitch P1 can also be determined by a combination of any two values included in the first group. The range of the pitch P1 can also be determined by a combination of any two values included in the second group. The pitch P1 can be, for example, 1 μm or more and 25 μm or less, can be 1 μm or more and 10 μm or less, can be 1 μm or more and 5 μm or less, can be 1 μm or more and 3 μm or less, can be 1 μm or more and 2 μm or less, can be 2 μm or more and 25 μm or less, can be 2 μm or more and 10 μm or less, can be 2 μm or more and 5 μm or less, can be 2 μm or more and 3 μm or less, can be 3 μm or more and 25 μm or less, can be 3 μm or more and 10 μm or less, can be 3 μm or more and 5 μm or less, can be 5 μm or more and 25 μm or less, can be 5 μm or more and 10 μm or less, and can also be 10 μm or more and 25 μm or less.

[0153] The interval S7 between the first wall surface 32 and the second opening 41 in a top view can be greater than the interval S3. Thereby, it is possible to suppress the generation of a shadow in the second opening 41 close to the first wall surface 32.

[0154] When viewed from above, the size S8 of the opening 43a of the recess 43 may be smaller than the size S6 of the second opening 41. The size S8 of the opening 43a may be, for example, 0.5 μm or more, may be 2 μm or more, and may also be 3 μm or more. The size S8 may be, for example, 5 μm or less, may be 10 μm or less, and may also be 25 μm or less. The range of the size S8 may be determined by the first group consisting of 0.5 μm, 2 μm, and 3 μm, and / or the second group consisting of 5 μm, 10 μm, and 25 μm. The range of the size S8 may also be determined by a combination of any value included in the first group and any value included in the second group. The range of the size S8 may also be determined by a combination of any two values included in the first group. The range of the size S8 may also be determined by a combination of any two values included in the second group. The size S8 may be, for example, 0.5 μm or more and 25 μm or less, may be 0.5 μm or more and 10 μm or less, may be 0.5 μm or more and 5 μm or less, may be 0.5 μm or more and 3 μm or less, may be 0.5 μm or more and 2 μm or less, may be 2 μm or more and 25 μm or less, may be 2 μm or more and 10 μm or less, may be 2 μm or more and 5 μm or less, may be 2 μm or more and 3 μm or less, may be 3 μm or more and 25 μm or less, may be 3 μm or more and 10 μm or less, may be 3 μm or more and 5 μm or less, may be 5 μm or more and 25 μm or less, may be 5 μm or more and 10 μm or less, and may also be 10 μm or more and 25 μm or less.

[0155] The pitch of the recesses 43 refers to the distance P2 between the centers of two adjacent recesses 43 in the direction in which the two recesses 43 are arranged. The pitch P2 of the recesses 43 can be, for example, 0.7 times or more the pitch P1 of the second opening 41, can be 0.8 times or more, or can be 0.9 times or more. The pitch P2 can be, for example, 1.1 times or less the pitch P1, can be 1.2 times or less, or can be 1.3 times or less. In other words, P2 / P1 can be 0.7 or more, can be 0.8 or more, or can be 0.9 or more. Further, P2 / P1 can be, for example, 1.1 or less, can be 1.2 or less, or can be 1.3 or less. The range of P2 / P1 can be determined by a first group consisting of 0.7, 0.8, and 0.9, and / or a second group consisting of 1.1, 1.2, and 1.3. The range of P2 / P1 can also be determined by a combination of any value included in the first group and any value included in the second group. The range of P2 / P1 can also be determined by a combination of any two values included in the first group. The range of P2 / P1 can also be determined by a combination of any two values included in the second group. The pitch P2 can be, for example, 0.7 times or more and 1.3 times or less the pitch P1, can be 0.7 times or more and 1.2 times or less, can be 0.7 times or more and 1.1 times or less, can be 0.7 times or more and 0.9 times or less, can be 0.7 times or more and 0.8 times or less, can be 0.8 times or more and 1.3 times or less, can be 0.8 times or more and 1.2 times or less, can be 0.8 times or more and 1.1 times or less, can be 0.8 times or more and 0.9 times or less, can be 0.9 times or more and 1.3 times or less, can be 0.9 times or more and 1.2 times or less, can be 0.9 times or more and 1.1 times or less, can be 1.1 times or more and 1.3 times or less, can be 1.1 times or more and 1.2 times or less, or can be 1.2 times or more and 1.3 times or less.

[0156] The number N43 of the recesses 43 per unit area in the dummy region 481 can be, for example, 0.7 times or more, 0.8 times or more, or 0.9 times or more the number N41 of the second openings 41 per unit area in the effective region 49. The number N43 can be, for example, 1.1 times or less, 1.2 times or less, or 1.3 times or less the number N41. In other words, N43 / N41 can be 0.7 or more, 0.8 or more, or 0.9 or more. Also, N43 / N41 can be, for example, 1.1 or less, 1.2 or less, or 1.3 or less. The range of N43 / N41 can be determined by the first group consisting of 0.7, 0.8, and 0.9, and / or the second group consisting of 1.1, 1.2, and 1.3. The range of N43 / N41 can also be determined by a combination of any value included in the first group and any value included in the second group. The range of N43 / N41 can also be determined by a combination of any two values included in the first group. The range of N43 / N41 can also be determined by a combination of any two values included in the second group. The number N43 can be, for example, 0.7 times or more and 1.3 times or less the number N41, 0.7 times or more and 1.2 times or less the number N41, 0.7 times or more and 1.1 times or less the number N41, 0.7 times or more and 0.9 times or less the number N41, 0.7 times or more and 0.8 times or less the number N41, 0.8 times or more and 1.3 times or less the number N41, 0.8 times or more and 1.2 times or less the number N41, 0.8 times or more and 1.1 times or less the number N41, 0.8 times or more and 0.9 times or less the number N41, 0.9 times or more and 1.3 times or less the number N41, 0.9 times or more and 1.2 times or less the number N41, 0.9 times or more and 1.1 times or less the number N41, 1.1 times or more and 1.3 times or less the number N41, 1.1 times or more and 1.2 times or less the number N41, or 1.2 times or more and 1.3 times or less the number N41. It should be noted that the number N43 of the recesses 43 per unit area in the dummy region 481 is calculated based on the number of the recesses 43 that enter a region R1 surrounded by a square with a side length of 0.5 mm, and the region R1 includes any recess 43 adjacent to the effective region 49 at a corner (see Figure 5B ).

[0157] The interval S9 between the second opening 41 located on the outermost peripheral side of the effective region 49 and the recess 43 closest to the second opening 41 can be, for example, 0.7 times or more, 0.8 times or more, or 0.9 times or more of the pitch P1 of the second opening 41. The interval S9 can be, for example, 1.1 times or less, 1.2 times or less, or 1.3 times or less of the pitch P1. In other words, S9 / P1 can be 0.7 or more, 0.8 or more, or 0.9 or more. Additionally, S9 / P1 can be, for example, 1.1 or less, 1.2 or less, or 1.3 or less. The range of S9 / P1 can be determined by the first group consisting of 0.7, 0.8, and 0.9, and / or the second group consisting of 1.1, 1.2, and 1.3. The range of S9 / P1 can also be determined by a combination of any value included in the first group and any value included in the second group. The range of S9 / P1 can also be determined by a combination of any two values included in the first group. The range of S9 / P1 can also be determined by a combination of any two values included in the second group. The interval S9 can be, for example, 0.7 times or more and 1.3 times or less of the pitch P1, 0.7 times or more and 1.2 times or less, 0.7 times or more and 1.1 times or less, 0.7 times or more and 0.9 times or less, 0.7 times or more and 0.8 times or less, 0.8 times or more and 1.3 times or less, 0.8 times or more and 1.2 times or less, 0.8 times or more and 1.1 times or less, 0.8 times or more and 0.9 times or less, 0.9 times or more and 1.3 times or less, 0.9 times or more and 1.2 times or less, 0.9 times or more and 1.1 times or less, 1.1 times or more and 1.3 times or less, 1.1 times or more and 1.2 times or less, or 1.2 times or more and 1.3 times or less.

[0158] The metal layer 40 can include alignment marks. The alignment marks of the metal layer 40 can be formed separately from the alignment marks 39 of the first layer 30, or can be formed in place of the alignment marks 39 of the first layer 30.

[0159] Next, the intermediate layer 50 will be described. The intermediate layer 50 includes layers that perform certain functions with respect to the first layer 30 or the metal layer 40. For example, the intermediate layer 50 includes a barrier layer 51 and a seed layer 52. In Figure 6A the example shown, the intermediate layer 50 is located between the first layer 30 and the metal layer 40.

[0160] The barrier layer 51 has a function of stopping etching in the process of processing the first layer 30 by etching. Specifically, the barrier layer 51 is resistant to the etchant for etching the first layer 30. The barrier layer 51 can include, for example, a metal material, an inorganic compound, an organic compound, etc. The metal material is, for example, aluminum, aluminum alloy, etc. The aluminum alloy includes, for example, aluminum and neodymium. The inorganic compound is, for example, silicon oxide, etc. The organic compound is, for example, a resin. The organic compound can have photosensitivity. For example, the barrier layer 51 can include a photoresist. The organic compound may also not have photosensitivity.

[0161] Regarding the thickness of the barrier layer 51, there is no particular limitation as long as etching of the metal layer 40 can be suppressed in the process of processing the first layer 30. For example, the thickness of the barrier layer 51 can be less than the thickness of the metal layer 40, or can be equal to or greater than the thickness of the metal layer 40. The thickness of the barrier layer 51 can be, for example, 5 nm or more, 50 nm or more, or 75 nm or more. The thickness of the barrier layer 51 can be, for example, 10 μm or less, 50 μm or less, or 100 μm or less. The range of the thickness of the barrier layer 51 can be determined by a first group consisting of 5 nm, 50 nm, and 75 nm, and / or a second group consisting of 10 μm, 50 μm, and 100 μm. The range of the thickness of the barrier layer 51 can also be determined by a combination of any value included in the first group and any value included in the second group. The range of the thickness of the barrier layer 51 can also be determined by a combination of any two values included in the first group. The range of the thickness of the barrier layer 51 can also be determined by a combination of any two values included in the second group. The thickness of the barrier layer 51 can be, for example, 5 nm or more and 100 μm or less, 5 nm or more and 50 μm or less, 5 nm or more and 10 μm or less, 5 nm or more and 75 nm or less, 5 nm or more and 50 nm or less, 50 nm or more and 100 μm or less, 50 nm or more and 50 μm or less, 50 nm or more and 10 μm or less, 50 nm or more and 75 nm or less, 75 nm or more and 100 μm or less, 75 nm or more and 50 μm or less, 75 nm or more and 10 μm or less, 10 μm or more and 100 μm or less, 10 μm or more and 50 μm or less, or 50 μm or more and 100 μm or less. The higher the resistance of the barrier layer 51 to the etchant for the first layer 30, the smaller the thickness of the barrier layer 51 can be made. The thickness of the barrier layer 51 is particularly preferably 1 μm or less.

[0162] When the metal layer 40 is formed by electrolytic plating, the seed layer 52 has electrical conductivity. Specifically, the seed layer 52 may include a metal material, a material having electrical conductivity such as oxide conductivity. More specifically, the seed layer 52 may include copper, nickel, chromium, tantalum, tungsten, indium tin oxide (ITO). Such a seed layer 52 can be formed, for example, by electroless plating, sputtering, sputtering, vacuum evaporation, or ion plating. The seed layer 52 includes a fifth surface 521 facing the second surface 302 of the first layer 30 and a sixth surface 522 located on the opposite side of the fifth surface 521.

[0163] Regarding the thickness of the seed layer 52, there is no particular limitation as long as the metal layer 40 can be formed. For example, the thickness of the seed layer 52 may be less than the thickness T2 of the metal layer 40, or may be equal to or greater than the thickness T2 of the metal layer 40. The thickness of the seed layer 52 can be, for example, 5 nm or more, 50 nm or more, or 75 nm or more. The thickness of the seed layer 52 can be, for example, 200 nm or less, 250 nm or less, or 300 nm or less. The range of the thickness of the seed layer 52 can be determined by a first group consisting of 5 nm, 50 nm, and 75 nm, and / or a second group consisting of 200 nm, 250 nm, and 300 nm. The range of the thickness of the seed layer 52 can also be determined by a combination of any value included in the first group and any value included in the second group. The range of the thickness of the seed layer 52 can also be determined by a combination of any two values included in the first group. The range of the thickness of the seed layer 52 can also be determined by a combination of any two values included in the second group. The thickness of the seed layer 52 can be, for example, 5 nm or more and 300 nm or less, 5 nm or more and 250 nm or less, 5 nm or more and 200 nm or less, 5 nm or more and 75 nm or less, 5 nm or more and 50 nm or less, 50 nm or more and 300 nm or less, 50 nm or more and 250 nm or less, 50 nm or more and 200 nm or less, 50 nm or more and 75 nm or less, 75 nm or more and 300 nm or less, 75 nm or more and 250 nm or less, 75 nm or more and 200 nm or less, 200 nm or more and 300 nm or less, 200 nm or more and 250 nm or less, or 250 nm or more and 300 nm or less.

[0164] The intermediate layer 50 may include an adhesion layer 53 between the barrier layer 51 and the seed layer 52 to improve the adhesion between the barrier layer 51 and the seed layer 52. The adhesion layer 53 may include titanium, chromium, titanium oxide, chromium nitride, zinc oxide. Such an adhesion layer 53 can be formed, for example, by a sol-gel method, a sputtering method, or a vacuum evaporation method. The thickness of the adhesion layer 53 is not particularly limited. For example, it can be 5 nm or more, can be 6 nm or more, and can also be 8 nm or more. The thickness of the adhesion layer 53 can be, for example, 50 nm or less, can be 60 nm or less, and can also be 70 nm or less. The range of the thickness of the adhesion layer 53 can be determined by a first group consisting of 5 nm, 6 nm, and 8 nm, and / or a second group consisting of 50 nm, 60 nm, and 70 nm. The range of the thickness of the adhesion layer 53 can also be determined by a combination of any value included in the first group and any value included in the second group. The range of the thickness of the adhesion layer 53 can also be determined by a combination of any two values included in the first group. The range of the thickness of the adhesion layer 53 can also be determined by a combination of any two values included in the second group. The thickness of the adhesion layer 53 can be, for example, 5 nm or more and 70 nm or less, can be 5 nm or more and 60 nm or less, can be 5 nm or more and 50 nm or less, can be 5 nm or more and 8 nm or less, can be 5 nm or more and 6 nm or less, can be 6 nm or more and 70 nm or less, can be 6 nm or more and 60 nm or less, can be 6 nm or more and 50 nm or less, can be 6 nm or more and 8 nm or less, can be 8 nm or more and 70 nm or less, can be 8 nm or more and 60 nm or less, can be 8 nm or more and 50 nm or less, can be 50 nm or more and 70 nm or less, can be 50 nm or more and 60 nm or less, and can also be 60 nm or more and 70 nm or less.

[0165] Preferably, the intermediate layer 50 is located at a position that does not overlap with the second opening 41 in a top view. Thereby, it is possible to suppress the generation of a shadow caused by the intermediate layer 50.

[0166] The intermediate layer 50 may include alignment marks. The alignment marks of the intermediate layer 50 may be formed separately from the alignment marks of the first layer 30 or the metal layer 40, or may be formed in place of the alignment marks of the first layer 30 or the metal layer 40.

[0167] The thickness of each layer, the size of each component, the interval, etc. can be measured by observing an image of the cross section of the mask 20 using a scanning electron microscope.

[0168] (Method for manufacturing an evaporation mask)

[0169] Next, with reference to Figures 7 to 19A method for manufacturing an evaporation mask according to this embodiment will be described. First, a first layer 30 is prepared. As the first layer 30, a silicon wafer can be used. The first surface 301 and the second surface 302 of the first layer 30 can be polished to a mirror-like surface. The arithmetic mean roughness Ra of the first surface 301 and the second surface 302 can be 1.5 nm or less, or can be 1.0 nm or less. The surface orientation of the first surface 301 and the second surface 302 can also be (100), (110), etc.

[0170] As Figure 7 shown, the second surface 302 of the first layer 30 includes a first region 305 and a second region 306. The first region 305 is a region corresponding to the above-mentioned first opening 31. The second region 306 is a region corresponding to the above-mentioned outer region 35 and inner region 36. The second region 306 surrounds the first region 305.

[0171] Next, as Figure 8 shown, an intermediate layer 50 is formed on the second surface 302 of the first layer 30 to produce a laminate 55 including the first layer 30 and the intermediate layer 50. Specifically, a barrier layer 51, an adhesion layer 53, and a seed layer 52 are sequentially laminated on the second surface 302. The barrier layer 51 can be formed by a vacuum deposition method such as sputtering. The adhesion layer 53 can be formed by a sol-gel method, sputtering, or vacuum evaporation. The seed layer 52 can be formed by electroless plating, sputtering, vacuum evaporation, or ion plating.

[0172] As Figure 8 shown, the sixth surface 522 of the seed layer 52 includes a third region 525 and a fourth region 526. The third region 525 is a region corresponding to the effective region 49 of the above-mentioned metal layer 40. The fourth region 526 is a region corresponding to the dummy region 481 of the above-mentioned metal layer 40. The fourth region 526 surrounds the third region 525. The sizes of the third region 525 and the fourth region 526 can be the same as the sizes of the effective region 49 and the dummy region 481, respectively. The width of the fourth region 526 can be 0.6 mm or more.

[0173] The intermediate layer 50 is formed to cover at least the first region 305. The intermediate layer 50 can also cover the second region 306. For example, the intermediate layer 50 can also be formed on the entire second surface 302.

[0174] Next, as Figure 9A shown, a resist patterning process for forming a plurality of resist protrusions 60 on the sixth surface 522 of the seed layer 52 is performed. Thereby, a plurality of resist protrusions 60 protruding from the sixth surface 522 are formed in the third region 525 and the fourth region 526.

[0175] Figure 9B is to Figure 9AA view showing an enlarged portion surrounded by a double-dashed line. Figure 9C It is a top view of the seed layer 52 formed with a plurality of resist protrusions 60. Figure 9D It is Figure 9C A view showing an enlarged portion surrounded by a double-dashed line. By comparing Figure 4 and Figure 9C it can be seen that a plurality of resist protrusions 60 are formed corresponding to the second opening 41 and the recess 43 on the third region 525 and the fourth region 526.

[0176] The resist protrusion 60 is, for example, a photoresist. The photoresist is a positive photoresist. Examples of the positive photoresist include iP5700, PMER-P-LA900PM, PMER-P7100 manufactured by Tokyo Ohka Kogyo Co., Ltd., NPR9700 manufactured by Nagase ChemteX, etc.

[0177] The height T4 of the resist protrusion 60 is defined as the distance between the top of the resist protrusion 60 and the sixth surface 522. The height T4 is greater than the thickness T2 of the metal layer 40. The height T4 can be, for example, 4 μm or more, can be 5 μm or more, and can also be 6 μm or more. The height T4 can be, for example, 7 μm or less, can be 8 μm or less, and can also be 9 μm or less. The range of the height T4 can be determined by the first group composed of 4 μm, 5 μm, and 6 μm, and / or the second group composed of 7 μm, 8 μm, and 9 μm. The range of the height T4 can also be determined by a combination of any value included in the first group and any value included in the second group. The range of the height T4 can also be determined by a combination of any two values included in the first group. The range of the height T4 can also be determined by a combination of any two values included in the second group. The height T4 can be, for example, 4 μm or more and 9 μm or less, can be 4 μm or more and 8 μm or less, can be 4 μm or more and 7 μm or less, can be 4 μm or more and 6 μm or less, can be 4 μm or more and 5 μm or less, can be 5 μm or more and 9 μm or less, can be 5 μm or more and 8 μm or less, can be 5 μm or more and 7 μm or less, can be 5 μm or more and 6 μm or less, can be 6 μm or more and 9 μm or less, can be 6 μm or more and 8 μm or less, can be 6 μm or more and 7 μm or less, can be 7 μm or more and 9 μm or less, can be 7 μm or more and 8 μm or less, and can also be 8 μm or more and 9 μm or less.

[0178] The fourth wall surface 61 of the resist protrusion 60 has a tapered surface 61a that narrows inward as it moves away from the sixth surface 522. Specifically, the overall shape of the resist protrusion 60 can be a frustum shape or a truncated cone shape. The angle θ2 between the tapered surface 61a formed in the third region 525 and the sixth surface 522 of the seed layer 52 can be the same as the angle θ1 between the tapered surface 42a of the second opening 41 and the third surface 401. Specifically, the angle θ2 can be, for example, 50° or more, 55° or more, 60° or more, or 65° or more. The angle θ2 can be, for example, 75° or less, 80° or less, 85° or less, or less than 90°. The range of the angle θ2 can be determined by a first group consisting of 50°, 55°, 60°, and 65°, and / or a second group consisting of 75°, 80°, 85°, and 90°. The range of the angle θ2 can also be determined by a combination of any value included in the first group and any value included in the second group. The range of the angle θ2 can also be determined by a combination of any two values included in the first group. The range of the angle θ2 can also be determined by a combination of any two values included in the second group. The angle θ2 can be, for example, 50° or more and less than 90°, 50° or more and 85° or less, 50° or more and 80° or less, 50° or more and 75° or less, 50° or more and 65° or less, 50° or more and 60° or less, 50° or more and 55° or less, 55° or more and less than 90°, 55° or more and 85° or less, 55° or more and 80° or less, 55° or more and 75° or less, 55° or more and 65° or less, 55° or more and 60° or less, 60° or more and less than 90°, 60° or more and 85° or less, 60° or more and 80° or less, 60° or more and 75° or less, 60° or more and 65° or less, 65° or more and less than 90°, 65° or more and 85° or less, 65° or more and 80° or less, 65° or more and 75° or less, 75° or more and less than 90°, 75° or more and 85° or less, 75° or more and 80° or less, 80° or more and less than 90°, 80° or more and 85° or less, or 85° or more and less than 90°. It should be noted that the angle θ3 between the tapered surface 61a of the resist protrusion 60 formed in the fourth region 526 and the sixth surface 522 of the seed layer 52 can be the same as or different from the angle θ1.

[0179] The resist pattern forming process includes, for example, a first resist layer forming process, an exposure process, and a development process.

[0180] The first resist layer forming step is a step of forming a first resist layer on the sixth surface 522. The first resist layer forming step includes, for example, a step of coating a liquid resist onto the sixth surface 522. The first resist layer forming step may include a step of heating the liquid resist on the sixth surface 522. By drying the liquid resist, the first resist layer is formed.

[0181] In the exposure step, light is irradiated onto the first resist layer in such a manner that in the subsequent development step, the first resist layer remains in the portions corresponding to the second opening 41 and the recess 43 in the third region 525 and the fourth region 526, and the first resist layer on the other portions on the sixth surface 522 is removed. Specifically, since the first resist layer is a positive resist, light is irradiated onto the first resist layer on the other portions on the sixth surface 522. The light is, for example, i-line. The i-line refers to a spectral line of mercury having a wavelength of 365 nm.

[0182] In the exposure step, parameters such as the exposure amount and the focus position can be adjusted. The exposure amount can be, for example, 150 mJ / cm 2 above, can be 175 mJ / cm 2 above, and can also be 200 mJ / cm 2 above. The exposure amount can be, for example, 300 mJ / cm 2 below, can be 350 mJ / cm 2 below, and can also be 400 mJ / cm 2 below. The range of the exposure amount can be determined by the first group composed of 150 mJ / cm 2 , 175 mJ / cm 2 , and 200 mJ / cm 2 , and / or the second group composed of 300 mJ / cm 2 , 350 mJ / cm 2 , and 400 mJ / cm 2 . The range of the exposure amount can also be determined by a combination of any one value included in the first group and any one value included in the second group. The range of the exposure amount can also be determined by a combination of any two values included in the first group. The range of the exposure amount can also be determined by a combination of any two values included in the second group. The exposure amount can be, for example, 150 mJ / cm 2 above and 400 mJ / cm 2 below, can be 150 mJ / cm 2 above and 350 mJ / cm 2 below, can be 150 mJ / cm 2 above and 300 mJ / cm 2 below, can be 150 mJ / cm2 Above 200 mJ / cm 2 Below, it can be 150 mJ / cm 2 Above 175 mJ / cm 2 Below, it can be 175 mJ / cm 2 Above 400 mJ / cm 2 Below, it can be 175 mJ / cm 2 Above 350 mJ / cm 2 Below, it can be 175 mJ / cm 2 Above 300 mJ / cm 2 Below, it can be 175 mJ / cm 2 Above 200 mJ / cm 2 Below, it can be 200 mJ / cm 2 Above 400 mJ / cm 2 Below, it can be 200 mJ / cm 2 Above 350 mJ / cm 2 Below, it can be 200 mJ / cm 2 Above 300 mJ / cm 2 Below, it can be 300 mJ / cm 2 Above 400 mJ / cm 2 Below, it can be 300 mJ / cm 2 Above 350 mJ / cm 2 Below, it can also be 350 mJ / cm 2 Above 400 mJ / cm 2Hereinafter, the focal position may be the sixth surface 522 of the seed layer 52 or may be deviated from the sixth surface 522. For example, the position displaced by SH μm from the sixth surface 522 toward the fifth surface 521 may be the focal position. The displacement amount SH may be, for example, 1 μm or more, may be 2 μm or more, and may be 3 μm or more. The displacement amount SH may be, for example, 6 μm or less, may be 8 μm or less, and may be 10 μm or less. The range of the displacement amount SH may be determined by the first group composed of 1 μm, 2 μm, and 3 μm, and / or the second group composed of 6 μm, 8 μm, and 10 μm. The range of the displacement amount SH may also be determined by a combination of any value included in the first group and any value included in the second group. The range of the displacement amount SH may also be determined by a combination of any two values included in the first group. The range of the displacement amount SH may also be determined by a combination of any two values included in the second group. The displacement amount SH may be, for example, 1 μm or more and 10 μm or less, may be 1 μm or more and 8 μm or less, may be 1 μm or more and 6 μm or less, may be 1 μm or more and 3 μm or less, may be 1 μm or more and 2 μm or less, may be 2 μm or more and 10 μm or less, may be 2 μm or more and 8 μm or less, may be 2 μm or more and 6 μm or less, may be 2 μm or more and 3 μm or less, may be 3 μm or more and 10 μm or less, may be 3 μm or more and 8 μm or less, may be 3 μm or more and 6 μm or less, may be 6 μm or more and 10 μm or less, may be 6 μm or more and 8 μm or less, or may be 8 μm or more and 10 μm or less. By adjusting these parameters, the size and cross-sectional shape of the resist convex portion 60 can be controlled. By controlling the size and cross-sectional shape of the resist convex portion 60, the size and cross-sectional shape of the second opening 41 can be controlled. In particular, the angle θ1 of the tapered surface 42a of the second opening 41 can be controlled.

[0183] After the exposure process, the first resist layer is developed, whereby a plurality of resist convex portions 60 are obtained in the third region 525 and the fourth region 526. The developing solution contains, for example, TMAH (tetramethylammonium hydroxide).

[0184] Next, as Figure 10As shown, the first plating process is carried out. In the first plating process, a first metal layer 411 is formed on the sixth surface 522 by electrolytic plating. Specifically, a plating power supply is connected to the seed layer 52, and the laminate 55 is immersed in a plating bath containing a plating solution. Thereby, metal is deposited in the gaps between the plurality of resist projections 60 on the sixth surface 522 to form the first metal layer 411. The composition of the plating solution is determined such that the nickel content in the metal layer 40 is 30% by mass or more and 54% by mass or less. For example, as the plating solution, a mixed solution of a solution containing a nickel compound and a solution containing an iron compound can be used. For example, a mixed solution of a solution containing nickel sulfamate and nickel bromide and a solution containing ferrous sulfamate can be used.

[0185] The thickness T5 of the first metal layer 411 is less than the height T4 of the resist projection 60. In addition, the thickness T5 is less than the thickness T2 of the metal layer. The thickness T5 can be, for example, 2 μm or more, can be 3 μm or more, or can be 4 μm or more. The thickness T5 can be, for example, 5 μm or less, can be 6 μm or less, or can be 7 μm or less. The range of the thickness T5 can be determined by a first group composed of 2 μm, 3 μm, and 4 μm, and / or a second group composed of 5 μm, 6 μm, and 7 μm. The range of the thickness T5 can also be determined by a combination of any one value included in the first group and any one value included in the second group. The range of the thickness T5 can also be determined by a combination of any two values included in the first group. The range of the thickness T5 can also be determined by a combination of any two values included in the second group. The thickness T5 can be, for example, 2 μm or more and 7 μm or less, can be 2 μm or more and 6 μm or less, can be 2 μm or more and 5 μm or less, can be 2 μm or more and 4 μm or less, can be 2 μm or more and 3 μm or less, can be 3 μm or more and 7 μm or less, can be 3 μm or more and 6 μm or less, can be 3 μm or more and 5 μm or less, can be 3 μm or more and 4 μm or less, can be 4 μm or more and 7 μm or less, can be 4 μm or more and 6 μm or less, can be 4 μm or more and 5 μm or less, can be 5 μm or more and 7 μm or less, can be 5 μm or more and 6 μm or less, or can be 6 μm or more and 7 μm or less. The thickness T5 can be controlled by the current value from the plating power supply, the energization time of the plating power supply, the immersion time in the plating solution, etc.

[0186] A plurality of openings 41a corresponding to the plurality of resist projections 60 are formed in the first metal layer 411. The shape and size of the opening 41a correspond to the shape and size of the tapered surface 61a of the corresponding resist projection 60.

[0187] It should be noted that by forming the resist protrusions 60 also in the fourth region 526 surrounding the third region 525, compared with the case where the resist protrusions 60 are formed only in the third region 525, the thickness T5 of the first metal layer 411 in the third region 525 can be made more uniform. In particular, it is possible to suppress the thickness T5 of the first metal layer 411 at the outer peripheral edge of the third region 525 from being smaller than the thickness T5 of the first metal layer 411 at the center of the third region 525. This is considered because by forming the resist protrusions 60 also around the third region 525, the difference in current density between the outer peripheral edge and the center of the third region 525 in the first plating process becomes smaller. In other words, this is considered because the influence of the region without the resist protrusions 60 outside the third region 525 on the current density at the outer peripheral edge of the third region 525 can be reduced. As a result, compared with the case where the resist protrusions 60 are formed only in the third region 525, the size of the opening 41a of the first metal layer 411 in the third region 525 can be made more uniform. Thus, compared with the case where the metal layer 40 is formed by disposing the resist protrusions 60 only in the third region 525, the thickness T2 of the metal layer 40 in the third region 525 can be made more uniform, and the size of the second opening 41 of the metal layer 40 can be made more uniform.

[0188] From the aspect of making the thickness T2 of the metal layer 40 in the third region 525 more uniform, the density of the resist protrusions 60 in the third region 525 and the density of the resist protrusions 60 in the fourth region 526 are preferably of the same degree.

[0189] Specifically, the number N526 of the resist protrusions 60 per unit area in the fourth region 526 can be, for example, 0.7 times or more, 0.8 times or more, or 0.9 times or more of the number N525 of the resist protrusions 60 per unit area in the third region 525. The number N526 can be, for example, 1.1 times or less, 1.2 times or less, or 1.3 times or less of the number N525. In other words, N526 / N525 can be, for example, 0.7 or more, 0.8 or more, or 0.9 or more. Additionally, N526 / N525 can be, for example, 1.1 or less, 1.2 or less, or 1.3 or less. The range of N526 / N525 can be determined by the first group consisting of 0.7, 0.8, and 0.9, and / or the second group consisting of 1.1, 1.2, and 1.3. The range of N526 / N525 can also be determined by a combination of any value included in the first group and any value included in the second group. The range of N526 / N525 can also be determined by a combination of any two values included in the first group. The range of N526 / N525 can also be determined by a combination of any two values included in the second group. The number N526 can be, for example, 0.7 times or more and 1.3 times or less of the number N525, 0.7 times or more and 1.2 times or less, 0.7 times or more and 1.1 times or less, 0.7 times or more and 0.9 times or less, 0.7 times or more and 0.8 times or less, 0.8 times or more and 1.3 times or less, 0.8 times or more and 1.2 times or less, 0.8 times or more and 1.1 times or less, 0.8 times or more and 0.9 times or less, 0.9 times or more and 1.3 times or less, 0.9 times or more and 1.2 times or less, 0.9 times or more and 1.1 times or less, 1.1 times or more and 1.3 times or less, 1.1 times or more and 1.2 times or less, or 1.2 times or more and 1.3 times or less. It should be noted that the number of the resist protrusions 60 per unit area in the third region 525 is calculated based on the number of the resist protrusions 60 that enter the region R2 surrounded by a square with a side length of 0.5 mm. The region R2 includes any resist protrusion 60 adjacent to the fourth region 526 at the corner (see Figure 9D ).

[0190] Alternatively, the pitch P4 of the resist protrusions 60 in the fourth region 526 can be, for example, 0.7 times or more the pitch P3 of the resist protrusions 60 in the third region 525, can be 0.8 times or more, or can be 0.9 times or more. The pitch P4 can be, for example, 1.1 times or less the pitch P3, can be 1.2 times or less, or can be 1.3 times or less. In other words, P4 / P3 can be, for example, 0.7 or more, can be 0.8 or more, or can be 0.9 or more. Additionally, P4 / P3 can be, for example, 1.1 or less, can be 1.2 or less, or can be 1.3 or less. The range of P4 / P3 can be determined by a first group consisting of 0.7, 0.8, and 0.9, and / or a second group consisting of 1.1, 1.2, and 1.3. The range of P4 / P3 can also be determined by a combination of any value included in the first group and any value included in the second group. The range of P4 / P3 can also be determined by a combination of any two values included in the first group. The range of P4 / P3 can also be determined by a combination of any two values included in the second group. The pitch P4 can be, for example, 0.7 times or more and 1.3 times or less the pitch P3, can be 0.7 times or more and 1.2 times or less, can be 0.7 times or more and 1.1 times or less, can be 0.7 times or more and 0.9 times or less, can be 0.7 times or more and 0.8 times or less, can be 0.8 times or more and 1.3 times or less, can be 0.8 times or more and 1.2 times or less, can be 0.8 times or more and 1.1 times or less, can be 0.8 times or more and 0.9 times or less, can be 0.9 times or more and 1.3 times or less, can be 0.9 times or more and 1.2 times or less, can be 0.9 times or more and 1.1 times or less, can be 1.1 times or more and 1.3 times or less, can be 1.1 times or more and 1.2 times or less, or can be 1.2 times or more and 1.3 times or less. It should be noted that the pitches P3 and P4 of the resist protrusions 60 in the respective regions 525 and 526 refer to the distance between the centers of two adjacent resist protrusions 60 in the direction in which the two resist protrusions 60 are arranged in the respective regions 525 and 526. As will be described later, a second opening 41 is formed at the portion where the resist protrusions 60 are arranged in the third region 525, and a recess 43 is formed at the portion where the resist protrusions 60 are arranged in the fourth region 526. Therefore, the pitch P3 is equal to the pitch P1, and the pitch P4 is equal to the pitch P2.

[0191] In addition, in order to make the difference in the formation conditions of the first metal layer 411 on the outermost peripheral side of the third region 525 and the formation conditions of the first metal layer 411 on the innermost side of the fourth region 526 smaller than the case where the metal layer 40 is formed with only the resist protrusion 60 disposed in the third region 525, it is preferable that the interval S10 between the resist protrusion 60 on the outermost peripheral side of the third region 525 and the resist protrusion 60 in the fourth region 526 closest to the resist protrusion 60 is of the same degree as the pitch P3 of the resist protrusions 60 in the third region 525. Specifically, for example, the interval S10 may be 0.7 times or more the pitch P3, may be 0.8 times or more, or may be 0.9 times or more. The interval S10 may be 1.1 times or less the pitch P3, may be 1.2 times or less, or may be 1.3 times or less. In other words, S10 / P3 may be 0.7 or more, may be 0.8 or more, or may be 0.9 or more. In addition, S10 / P3 may be 1.1 or less, may be 1.2 or less, or may be 1.3 or less. The range of S10 / P3 may be determined by the first group consisting of 0.7, 0.8, and 0.9, and / or the second group consisting of 1.1, 1.2, and 1.3. The range of S10 / P3 may also be determined by a combination of any value included in the first group and any value included in the second group. The range of S10 / P3 may also be determined by a combination of any two values included in the first group. The range of S10 / P3 may also be determined by a combination of any two values included in the second group. For example, the interval S10 may be 0.7 times or more and 1.3 times or less the pitch P3, may be 0.7 times or more and 1.2 times or less, may be 0.7 times or more and 1.1 times or less, may be 0.7 times or more and 0.9 times or less, may be 0.7 times or more and 0.8 times or less, may be 0.8 times or more and 1.3 times or less, may be 0.8 times or more and 1.2 times or less, may be 0.8 times or more and 1.1 times or less, may be 0.8 times or more and 0.9 times or less, may be 0.9 times or more and 1.3 times or less, may be 0.9 times or more and 1.2 times or less, may be 0.9 times or more and 1.1 times or less, may be 1.1 times or more and 1.3 times or less, may be 1.1 times or more and 1.2 times or less, or may be 1.2 times or more and 1.3 times or less.

[0192] In the illustrated example, the resist protrusions 60 are arranged in a uniform arrangement pattern from the third region 525 to the fourth region 526. In addition, the shape and size of the resist protrusions 60 in the fourth region 526 are the same as the shape and size of the resist protrusions 60 in the third region 525. Thus, it is easy to control the thickness of the first metal layer 411 in the third region 525 to be more uniform. Of course, not limited to this example, the arrangement pattern of the resist protrusions 60 in the third region 525 may also be different from the arrangement pattern of the resist protrusions 60 in the fourth region 526. In addition, the shape and size of the resist protrusions 60 in the third region 525 may also be different from each other from the shape and size of the resist protrusions 60 in the fourth region 526. For example, the resist protrusions 60 formed in the fourth region 526 may not have the tapered surface 61a. In other words, the resist protrusions 60 formed in the fourth region 526 may be prismatic or cylindrical.

[0193] Next, as Figure 11 shown, the resist protrusions 60 formed in the fourth region 526 are removed. For example, the resist protrusions 60 formed in the fourth region 526 can also be removed by exposing and developing the resist protrusions 60 formed in the fourth region 526. The developer contains, for example, TMAH (tetramethylammonium hydroxide). Alternatively, the resist protrusions 60 formed in the fourth region 526 can also be removed by bringing the resist treatment liquid into contact only with the resist protrusions 60 formed in the fourth region 526. The resist treatment liquid contains, for example, N-methyl-2-pyrrolidone.

[0194] Next, as Figure 12A shown, the second plating treatment process is performed. In the second plating treatment, the second metal layer 412 is formed on the first metal layer 411 by electrolytic plating treatment. As a result, the opening 41a in the fourth region 526 in the opening 41a of the first metal layer 411 is blocked by the second metal layer 412, and the bottom 40a is formed in the opening 41a. As a result, a recess 43 having a bottom 40a is formed in the fourth region 526. In the illustrated example, the second metal layer 412 forms the bottom surface 44 of the recess 43. The second metal layer 412 may cover the first metal layer 411 in the third region 525. The metal layer 40 is formed by the first metal layer 411 and the second metal layer 412. The second plating treatment can be performed in the same manner as the first plating treatment. The plating solution used in the second plating treatment may be different from the plating solution used in the first plating treatment. From the aspect of suppressing defects such as pinholes and deformation in the first metal layer 411 and the second metal layer 412, or from the aspect of controlling the flatness, smoothness, film stress, or thermal expansion rate of the first metal layer 411 and the second metal layer 412, the plating solution used in the first plating treatment and the plating solution used in the second plating treatment can be appropriately adjusted respectively.

[0195] Figure 12B is a view showing an enlarged portion surrounded by a double-dashed line of Figure 12A . As shown in Figure 12B , the thickness T3 of the second metal layer 412 can be less than the thickness T5 of the first metal layer. In addition, the thickness T3 is determined such that the sum of the thickness T3 and the thickness T5 of the first metal layer (i.e., the thickness T2 of the metal layer) is less than the height T4 of the resist protrusion 60. As described above, the thickness T3 can be, for example, 0.5 μm or more, can be 0.75 μm or more, and can also be 1.0 μm or more. The thickness T3 can be, for example, 1.0 μm or less, can be 1.25 μm or less, and can also be 1.5 μm or less. By making the thickness T3 0.5 μm or more, it is possible to suppress defects such as pinholes and deformation in the metal layer 40. In addition, by making the thickness T3 1.5 μm or less, it is possible to suppress the thickness T3 of the second metal layer 412 in the third region 525 from becoming uneven. In particular, it is possible to suppress the thickness T3 of the second metal layer 412 at the outer peripheral edge of the third region 525 from being less than the thickness T3 of the second metal layer 412 at the center of the third region 525. As a result, it is possible to suppress the thickness T2 of the metal layer 40 in the effective region 49 from becoming uneven, and it is possible to suppress the size of the second opening 41 from becoming uneven. The thickness T3 of the second metal layer 412 can also be controlled by the current value from the plating power supply, the energization time of the plating power supply, the immersion time in the plating solution, and the like.

[0196] In the third region 525, a resist protrusion 60 is disposed within the opening 41a of the first metal layer 411. As a result, in the third region 525, a plurality of openings 41b corresponding to the plurality of resist protrusions 60 are formed in the second metal layer 412. As a result, the second opening 41 of the metal layer 40 is formed by the opening 41a of the first metal layer 411 and the opening 41b of the second metal layer 412. The shape and size of the second opening 41 correspond to the shape and size of the conical surface 60a of the corresponding resist protrusion 60.

[0197] In the fourth region 526, the resist protrusion 60 is not disposed within the opening 41a of the first metal layer 411. As a result, in the fourth region 526, the second metal layer 412 can also be formed on the wall surface defining the opening 41a of the first metal layer 411. In this case, the size S8 of the opening portion 43a of the concave portion 43 can be less than the size of the opening 41a of the first metal layer 411.

[0198] As described above, a metal layer 40 is formed that has an active region 49 with a second opening 41 formed therein and a dummy region 481 with a recess 43 formed therein. By forming the metal layer 40 in this way, the accuracy of the shape and dimensions of the second opening 41 can be improved. In particular, the angle θ1 between the second wall surface 42 and the fourth surface 402 has high accuracy. As a result, the accuracy of the position, shape, etc. of the above-described vapor deposition layer can be improved.

[0199] Next, as Figure 13 shown, the resist protrusion 60 in the third region 525 (i.e., the resist protrusion 60 within the second opening 41) is removed. For example, a resist treatment liquid is brought into contact with the resist protrusion 60 in the third region 525. The resist treatment liquid contains, for example, N-methyl-2-pyrrolidone. The resist protrusion 60 can also be removed by irradiating oxygen plasma onto the resist protrusion 60 in the third region 525.

[0200] Next, as Figure 14 shown, a protective layer 65 is formed on the fourth surface 402 of the metal layer 40. The protective layer 65 can be a resist layer. The protective layer 65 can be formed by coating a resist liquid on the metal layer 40 and curing it.

[0201] Next, as Figure 15 shown, a second resist formation process is performed in which a second resist layer 70 is locally formed on the first surface 301. A resist opening 71 is formed in the second resist layer 70. The resist opening 71 corresponds to the first opening 31 formed in the first layer 30. The resist opening 71 overlaps with the first region 305 in a top view.

[0202] The second resist layer 70 can be, for example, a photoresist. In this case, first, a liquid resist material is coated on the first surface 301 to form the second resist layer 70 on the first surface 301. After coating, a process of heating the second resist layer 70 can be performed. Next, a photolithography process of exposing and developing the second resist layer 70 is performed. As a result, the resist opening 71 can be formed in the second resist layer 70.

[0203] Although not shown, the second resist layer 70 can also be a silicon oxide film locally formed on the first surface 301. The silicon oxide film is formed, for example, by locally performing a thermal oxidation process or the like on the first surface 301. The silicon oxide film can be formed on the first layer 30 before laminating the intermediate layer 50 and the metal layer 40 on the first layer 30.

[0204] Next, an etching process is performed to etch the first layer 30 on the first surface 301 side. As Figure 16 shown, through the etching process, a first opening 31 that penetrates from the first surface 301 to the second surface 302 is formed in the first layer 30. The first opening 31 can also reach the barrier layer 51.

[0205] The etching process may also be dry etching using an etching gas. The etching gas is an example of the above-described etchant. Since the barrier layer 51 is resistant to the etchant, as Figure 16 shown, it is possible to suppress the etching from proceeding to the metal layer 40.

[0206] In the case where the etching process is deep reactive ion etching, for example, the etching process is carried out as follows. That is, an etching gas is introduced into the chamber. In addition, by applying a voltage to the space in the chamber, the etching gas is plasmaized. The radicals, ions, etc. in the plasma collide with the first surface 301 through the resist opening 71, whereby as Figure 16 shown, it is possible to form the first opening 31 in the first layer 30. The etching gas is, for example, SF6 gas.

[0207] As Figure 17 shown, in the etching process, it is also possible to form the protective film 75 on the wall surface 311a and the bottom surface 311b of the opening being formed in the first layer 30. In this case, the dry etching process and the protective film forming process are alternately repeated until the first opening 31 reaches the intermediate layer 50. Thereby, it is possible to form the first opening 31 that penetrates from the first surface 301 to the second surface 302.

[0208] The protective film 75 can be formed, for example, by switching the gas introduced into the chamber from the etching gas to a source gas. The source gas is, for example, C4F8 gas. In addition, by applying a voltage to the space in the chamber, the source gas is plasmaized. The radicals, etc. in the plasma react on the wall surface 311a and the bottom surface 311b of the opening being formed in the first layer 30, whereby as Figure 17 shown, it is possible to form the protective film 75 on the wall surface 311a and the bottom surface 311b.

[0209] After the etching process, a protective film removing process for removing the protective film 75 may be carried out. For example, a protective film treatment liquid is supplied to the first opening 31 of the first layer 30. It is also possible to immerse the first layer 30 in a tank containing the protective film treatment liquid. The protective film treatment liquid contains, for example, hydrofluoroether.

[0210] After the etching process, an intermediate layer removing process for removing the intermediate layer 50 is carried out. For example, an etchant for the intermediate layer 50 is supplied to the first opening 31. Thereby, as Figure 18 shown, it is possible to remove the intermediate layer 50 that overlaps the first opening 31 in a plan view. The etching of the intermediate layer 50 may be dry etching using a fluorine-based gas or the like, or wet etching using an acidic etching solution.

[0211] By forming a first opening 31 in the first layer 30 and then removing the intermediate layer 50, the second opening 41 in the effective region 49 communicates with the first opening 31. On the other hand, due to the presence of the bottom 40a formed by the second metal layer 412, the recess 43 formed in the dummy region 481 does not communicate with the first opening 31.

[0212] As Figure 19 shown, after the etching process, a protective layer removing process for removing the protective layer 65 is performed. For example, a resist treatment liquid is supplied to the protective layer 65. When the protective layer 65 is a photoresist, the resist treatment liquid contains, for example, N-methyl-2-pyrrolidone. The protective layer 65 can also be removed by irradiating oxygen plasma to the protective layer 65. When the protective layer 65 is a silicon oxide film, the resist treatment liquid contains, for example, hydrofluoric acid. The protective layer 65 can also be removed by dry etching using CF4 gas or the like.

[0213] In addition, as Figure 19 shown, after the etching process, a second resist removing process for removing the second resist layer 70 can also be performed. The second resist removing process can be performed in the same manner as the protective layer removing process. In addition, the second resist layer 70 can also be removed together with the protective layer 65 in the protective layer removing process.

[0214] Next, an example of a method for manufacturing the organic device 100 using the mask 20 will be described.

[0215] First, a substrate 110 having a first electrode 120 formed thereon is prepared. The substrate 110 can also be a silicon wafer. The first electrode 120 can be formed, for example, by forming a conductive layer constituting the first electrode 120 on the substrate 110 by a vacuum deposition method or the like and then patterning the conductive layer by a photolithography method or the like. The patterning of the conductive layer can be performed using a device for performing semiconductor manufacturing processes. The insulating layer 160 between two adjacent first electrodes 120 can also be formed on the substrate 110.

[0216] Next, an organic layer 130 including a first organic layer 130A, a second organic layer 130B, etc. is formed on the first electrode 120. For example, first, the first organic layer 130A is formed by a vapor deposition method using the first mask 20. The first mask 20 has a second opening 41 corresponding to the first organic layer 130A. Next, the second organic layer 130B is formed by a vapor deposition method using the second mask 20. The second mask 20 has a second opening 41 corresponding to the second organic layer 130B. Next, the third organic layer is formed by a vapor deposition method using the third mask 20. The third mask 20 has a second opening 41 corresponding to the third organic layer.

[0217] Next, a second electrode 140 is formed on the organic layer 130. For example, as Figure 1As shown, the second electrode 140 can be formed over the entire surface of the first surface 111 by a vacuum deposition method or the like. Alternatively, although not shown, the second electrode 140 can also be formed by an evaporation method using a mask 20 in the same manner as the organic layer 130. Thereafter, a sealing layer (not shown) or the like can be formed over the second electrode 140. Thus, the organic device 100 can be obtained.

[0218] A plurality of organic devices 100 can also be formed on one substrate 110. One organic device 100 can also correspond to one first opening 31 of the mask 20. In this case, the step of cutting the substrate 110 can also be performed. For example, the substrate 110 is cut along the region of the substrate 110 corresponding to the inner region 36 of the mask 20. Thereby, a plurality of organic devices 100 can be obtained.

[0219] The effect of the mask 20 in the case of forming the organic layer 130, the second electrode 140, etc. by an evaporation method using the mask 20 will be described.

[0220] The mask 20 includes a first layer 30 containing silicon or a silicon compound. Therefore, in the case where the substrate 110 contains silicon, a difference in thermal expansion generated between the substrate 110 and the mask 20 can be suppressed. Thereby, a decrease in the accuracy of the position, shape, etc. of the evaporated layers such as the organic layer 130 and the second electrode 140 due to the thermal expansion of the mask 20 can be suppressed. Therefore, the organic device 100 having a high element density can be provided.

[0221] The mask 20 includes a metal layer 40 having a plurality of second openings 41. By providing the metal layer 40 separately from the first layer 30, the thickness T2 of the metal layer 40 can be reduced. Therefore, the generation of shadows in the evaporation process can be suppressed. In addition, by appropriately ensuring the interval S7 between the first wall surface 32 and the second opening 41 in a plan view, the thickness of the first layer 30 can be appropriately ensured while suppressing shadows. Thus, when processing the mask 20, for example, when moving the mask, breakage of the first layer 30 can be suppressed. The metal layer 40 having the second openings 41 can be attracted to the substrate 110 by the magnetic force of the magnet 5. Thereby, the gap between the mask 20 and the substrate 110 can be reduced or eliminated. Thereby, the generation of shadows in the evaporation process can be suppressed.

[0222] In addition, since the angle θ1 between the fourth surface 402 of the metal layer 40 and the second wall surface 42 has high precision, the precision of the position, shape, etc. of the evaporated layer can be improved.

[0223] In addition, since the metal layer 40 is bonded to the first layer 30 via the intermediate layer 50, even when the first layer 30 is broken, the scattering of the fragments of the first layer 30 can be suppressed.

[0224] The peripheral region 48 of the metal layer 40 of the mask 20 is fixed relative to the second surface 302 of the first layer 30. Therefore, bending of the effective region 49 of the metal layer 40 can be suppressed. Thereby, a change in the position of the second opening 41 formed in the effective region 49 can be suppressed.

[0225] Various changes can be made to the above-described embodiment. For example, in the above example, the metal layer 40 is formed by an electrolytic plating method, but it is not limited thereto. The metal layer 40 can also be formed by a electroless plating method. In addition, the intermediate layer 50 may not have the barrier layer 51 and the adhesion layer 53. In this case, the seed layer 52 may also be in contact with the second surface 302 of the first layer 30. In addition, the mask 20 may not include the intermediate layer 50. In this case, the metal layer 40 may also be in contact with the second surface 302 of the first layer 30. In addition, the fourth surface 402 of the metal layer 40 can be planarized by polishing. By planarizing the fourth surface 402 of the metal layer 40, a gap between the metal layer 40 and the components on the substrate 110 can be suppressed. This can also contribute to the suppression of shadows. As a method for planarizing the fourth surface 402 of the metal layer 40, mechanical polishing, chemical mechanical polishing, wet etching, dry etching, and combinations thereof can be employed.

[0226] In addition, in the above example, an example in which a part of the peripheral region 48 is a dummy region 481 is shown, but it is not limited thereto. As Figure 20 and Figure 21 shown, all or almost all of the peripheral region 48 may be a dummy region 481. Figure 20 FIG. is a view of the mask 20 of this modified example as viewed from the emission surface 202 side. Figure 21 is a view showing Figure 20 a part of a cross-section along the XXI-XXI line of the mask 20. In Figure 20 and Figure 21 the example shown, a dummy region 481 is formed in all regions other than the region overlapping the alignment mark 39 and its surrounding region in plan view in the peripheral region 48.

[0227] In addition, in the above example, an example in which the second metal layer 412 is formed in the entire region of the dummy region 481 is shown, but it is not limited thereto. The second metal layer 412 may also be formed only in a part of the dummy region 481. In other words, only a part of the recesses 43 formed in the dummy region 481 may have bottoms 40a formed of the second metal layer 412. Specifically, as Figure 22As shown, it may also be that the recess 43 in the virtual region 481 that overlaps with the first opening 31 in a plan view has a bottom surface 40a formed by the second metal layer 412. In this case, the bottom surface 44 of the other recesses 43 may be formed by the intermediate layer 50 or the first layer 30. Furthermore, the metal layer 40 may not include the second metal layer 412. Specifically, when there is no recess 43 in the virtual region 481 that overlaps with the first opening 31 in a plan view, the second metal layer 412 may not be formed on the first metal layer 411. In these cases, since the first opening 31 and the recess 43 are not connected, when forming a vapor deposition layer on the substrate 110 using the mask 20, it is possible to prevent the vapor deposition material from the vapor deposition source 6 from adhering to the substrate 110 through the recess 43.

[0228] It should be noted that when the metal layer 40 does not include the second metal layer 412, the second plating process may not be performed. In this case, the recess 43 may extend through the entire thickness T2 of the metal layer 40. Additionally, when only a part of the recesses 43 has a bottom surface 40a formed by the second metal layer 412, the other recesses 43 may also extend through the entire thickness T2 of the metal layer 40. In this case, the second plating process may be performed only on a part of the fourth region 526. In this case, the second plating process may be performed only on the region in the fourth region 526 that overlaps with the first region 305 in a plan view.

[0229] Figure 23 FIG. is a diagram showing an example of an apparatus 200 including a device 100. The apparatus 200 includes a substrate 110 and an organic layer 130. The organic layer 130 is a layer formed by a vapor deposition method using a mask 20. The apparatus 200 is, for example, a smart phone. The apparatus 200 may also be a tablet terminal, a wearable terminal, or the like. The wearable terminal is a smart glass, a head-mounted display, or the like.

[0230] It is also possible to appropriately combine a plurality of constituent elements disclosed in the above-described embodiments and modification examples as needed. Alternatively, several constituent elements may be deleted from all the constituent elements shown in the above-described embodiments and modification examples.

[0231] Description of Reference Numerals

[0232] 10: Evaporation apparatus, 20: Mask, 201: Incident surface, 202: Exit surface, 30: First layer, 301: First surface, 302: Second surface, 305: First region, 306: Second region, 31: First opening, 32: First wall surface, 40: Metal layer, 401: Third surface, 402: Fourth surface, 41: Second opening, 43: Recess, 48: Peripheral region, 481: dummy region, 49: Active region, 411: First metal layer, 412: Second metal layer, 50: Intermediate layer, 51: Barrier layer, 52: Seed layer, 521: Fifth surface, 522: Sixth surface, 53: Adhesion layer, 100: Organic device.

Claims

1. A mask, comprising: a first layer including a first surface, a second surface opposite to the first surface, and at least one first opening penetrating from the first surface to the second surface; and a metal layer including a third surface facing the second surface, a fourth surface opposite to the third surface, and a plurality of second openings penetrating from the third surface to the fourth surface and overlapping with the first opening in a plan view, the first layer includes silicon or a silicon compound, the metal layer includes an effective region in which the plurality of second openings are formed, and a peripheral region surrounding the effective region, the peripheral region has a dummy region that is adjacent to the effective region and surrounds the effective region in a circumferential shape, and a plurality of recesses are formed that are recessed from the fourth surface to the third surface.

2. The mask according to claim 1, further comprising a seed layer between the second surface and the third surface.

3. The mask according to claim 2, wherein, The seed layer is conductive.

4. The mask according to claim 1, wherein, A barrier layer is included between the second surface and the third surface.

5. The mask according to claim 1, wherein the second opening is defined by a wall surface connecting the third surface and the fourth surface, the wall surface includes a tapered surface that expands outward as it faces the fourth surface.

6. The mask according to claim 1, wherein, The width of the dummy region is 0.6 mm or more.

7. The mask according to claim 1, wherein, The number of the recesses per unit area in the dummy region is 0.7 times or more and 1.3 times or less the number of the second openings per unit area in the effective region.

8. The mask according to claim 1, wherein, The pitch of the recesses is 0.7 times or more and 1.3 times or less the pitch of the second openings.

9. The mask according to claim 1, wherein, The distance between the second opening on the outermost peripheral side of the effective region and the recess closest to the second opening is 0.7 times or more and 1.3 times or less the pitch of the second openings.

10. The mask according to claim 1, wherein the thickness of the metal layer is 2 μm or more and 7 μm or less, the recess extends from the fourth surface to a part of the thickness of the metal layer, the thickness of the bottom of the recess is 0.5 μm or more and 1.5 μm or less.

11. A method for manufacturing a mask, comprising the following steps: a step of preparing a laminate including a first layer and a seed layer, the first layer including a first surface and a second surface opposite to the first surface, and the seed layer including a fifth surface facing the second surface and a sixth surface opposite to the fifth surface; a step of providing a first resist layer including a positive resist on the sixth surface of the seed layer; a step of exposing and developing the first resist layer to form a plurality of resist protrusions protruding from the sixth surface in a third region and a fourth region surrounding the third region on the sixth surface; The process of performing the first plating treatment, wherein, a step of depositing metal on the sixth surface in the third region and the fourth region where the plurality of resist protrusions are formed to form a first metal layer having a plurality of openings corresponding to the plurality of resist protrusions; a step of removing the resist protrusions in the fourth region; a step of removing the resist protrusions in the third region; A step of locally forming a second resist layer on the first surface of the first layer; and A step of forming a first opening in the first layer by etching the first layer from the first surface side, wherein the resist protrusion in the third region has a tapered surface that narrows inward as it moves away from the sixth surface.

12. The method for manufacturing a mask according to claim 11, wherein, After the step of removing the resist protrusion in the fourth region and before the step of removing the resist protrusion in the third region, a step of performing a second plating process is included, in which a second metal layer is deposited on the first metal layer and the sixth surface to form a second metal layer that plugs at least a part of the opening in the fourth region.

13. The method for manufacturing a mask according to claim 12, wherein The seed layer is conductive. The first plating process and the second plating process are electrolytic plating processes.

14. The method for manufacturing a mask according to claim 11, wherein, After the step of forming the first opening in the first layer, a step of removing the seed layer that overlaps the first opening in a top view is included.

15. The method for manufacturing a mask according to claim 11, wherein The laminate includes a barrier layer between the first layer and the seed layer. In the method for manufacturing the mask, after the step of forming the first opening in the first layer, a step of removing the barrier layer is included.

16. The method for manufacturing a mask according to claim 12, which includes the following steps: A step of forming a protective layer covering the second metal layer after the second plating process and before the formation of the first opening; and A step of removing the protective layer after the first opening is formed in the first layer.

17. The method for manufacturing a mask according to claim 11, wherein, The width of the fourth region is 0.6 mm or more.

18. The method for manufacturing a mask according to claim 12, wherein The thickness of the first metal layer is 0.5 μm or more and 6.5 μm or less. The thickness of the second metal layer is 0.5 μm or more and 1.5 μm or less.

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