Discharge reactor and preparation method thereof

Abstract

The present invention discloses a discharge reactor and a preparation method thereof, belonging to the field of discharge reaction technology. The discharge reactor comprises a first electrode layer and a second electrode layer, at least one dielectric layer and at least one air gap layer being stacked between the first electrode layer and the second electrode layer, the dielectric layer being adjacent to the air gap layer, and a surface of the at least one dielectric layer being constructed with a plurality of bumps, the bumps being located within the air gap layer and constraining and supporting the thickness of the air gap layer, with the portion of the air gap layer outside the bumps forming a continuous air gap channel space. The present invention constrains and supports the air gap by constructing bumps on the dielectric layer, precisely controlling the air gap thickness, ensuring uniform air gap thickness, and guaranteeing uniform discharge within the cavity. In an ozone generator, the ozone concentration and yield can be increased, thereby improving discharge efficiency. Furthermore, the bump connection enhances the stability of the dielectric layer and the electrode layer, reduces loose displacement, maintains electric field stability, and ensures stable operation of the device.

Description

Technical Field

[0001] The invention belongs to the technical field of discharge reactions, and in particular relates to a discharge reactor and a preparation method thereof. Background Art

[0002] A dielectric barrier discharge reactor (DBDR) is a highly efficient plasma-generating device that can also be used as an ozone generator. Its primary structure typically consists of two electrodes and a dielectric layer (or dielectric layer) between them. The dielectric layer's primary function is to block the direct flow of current during the discharge process, thereby ensuring discharge stability and safety. Factors significantly influencing the performance of a DBDR include the distance between the electrodes, the distance and shape (e.g., uniformity and tolerance) of the gas channel (air gap), and the material properties of the dielectric layer.

[0003] To control the thickness of the air gap, some existing discharge reactors use gaskets to support the electrodes and dielectric layers to form an air gap. However, the thickness of different gaskets can vary, resulting in an unsatisfactory air gap shape, such as inconsistent thickness across the air gap and uneven discharge. On the other hand, traditional discharge reactors often use glass, ceramics, or polycrystalline alumina as the dielectric layer. However, alumina ceramics are limited in strength due to their polycrystalline structure and grain boundary defects, and the amorphous state and surface microcracks of glass weaken their ability to withstand high voltages. Alumina ceramics and glass are chemically unstable and easily corroded. In addition, these materials have low thermal conductivity and poor heat dissipation. These problems can lead to poor and unstable discharge efficiency in the discharge reactor. For example, in ozone generators, this can result in low ozone concentration and yield. Summary of the Invention

[0004] Based on the technical problems existing in the prior art, the present invention provides a discharge reactor and a preparation method thereof, which solve the problems of the existing discharge reactor such as the unsatisfactory air gap shape, low discharge efficiency, and uneven and unstable discharge, and effectively ensures the air gap thickness. In particular, for example, the air gap thickness can be made uniform, which can be better suitable for scenarios such as high-concentration ozone generation.

[0005] According to the technical solution of the first aspect of the present invention, the present invention provides a discharge reactor, including electrode layers, the electrode layers including a first electrode layer and a second electrode layer, at least one dielectric layer and at least one air gap layer stacked between the first electrode layer and the second electrode layer, the dielectric layer being adjacent to the air gap layer, the surface of the at least one dielectric layer being constructed with a plurality of protrusions, the protrusions being located within the air gap layer and forming a restriction and support for the thickness of the air gap layer, and the portion of the air gap layer outside the protrusions forming a through air gap channel space.

[0006] In some embodiments, the dielectric layer is a first dielectric layer and a second dielectric layer, the air gap layer is a first air gap layer, and the first electrode layer, the first dielectric layer, the first air gap layer, the second dielectric layer, and the second electrode layer are arranged in sequence.

[0007] In some embodiments, the dielectric layer is a first dielectric layer, the air gap layer is a first air gap layer, and the first electrode layer, the first air gap layer, the first dielectric layer, and the second electrode layer are arranged in sequence.

[0008] In some embodiments, the dielectric layer is a first dielectric layer, the air gap layer is a first air gap layer and a second air gap layer, and the first electrode layer, the first air gap layer, the first dielectric layer, the second air gap layer, and the second electrode layer are arranged in sequence.

[0009] In some embodiments, the electrode layer also includes a third electrode layer, which is arranged outside the first electrode layer or the second electrode layer, and at least one dielectric layer and at least one air gap layer are stacked between the third electrode layer and the adjacent first electrode layer or the second electrode layer; the dielectric layer stacked between the third electrode layer and the adjacent first electrode layer or the second electrode layer is adjacent to the air gap layer, and the surface of at least one dielectric layer arranged between the third electrode layer and the adjacent first electrode layer or the second electrode layer is structured with multiple protrusions, and the multiple protrusions are located in the air gap layer and form a restriction and support for the thickness of the air gap layer, and a through air gap channel space is formed in the part of the air gap layer between the third electrode layer and the adjacent first electrode layer or the second electrode layer outside the protrusions.

[0010] In some embodiments, the third electrode layer is located outside the second electrode layer, the dielectric layer between the first electrode layer and the second electrode layer is a first dielectric layer, the air gap layer between the first electrode layer and the second electrode layer is a first air gap layer, the dielectric layer between the third electrode layer and the second electrode layer is a third dielectric layer, the air gap layer between the third electrode layer and the second electrode layer is a third air gap layer, and the first electrode layer, the first dielectric layer, the first air gap layer, the second electrode layer, the third air gap layer, the third dielectric layer, and the third electrode layer are arranged in sequence.

[0011] In some embodiments, the electrode layer, the dielectric layer, and the air gap layer are in a nested tubular structure.

[0012] In some embodiments, the bumps are in a columnar, block-shaped, spherical, sawtooth-shaped, or conical structure; and / or, the bumps are evenly distributed on the surface of the dielectric layer and all the bumps have the same height.

[0013] In some embodiments, the dielectric layer is a single crystal aluminum oxide layer; and / or further includes an insulating layer, which is disposed on an outer surface of the electrode layer outside the discharge reactor.

[0014] In some embodiments, the electrode layer is a patterned electrode layer, and the positions of the electrode layer corresponding to the bumps are empty.

[0015] According to the technical solution of the second aspect of the present invention, the present invention provides a method for preparing a discharge reactor, wherein the discharge reactor comprises at least two electrode layers, at least one dielectric layer and at least one air gap layer stacked between the electrode layers, the dielectric layer being adjacent to the air gap layer, and a surface of at least one dielectric layer having a plurality of bumps, the bumps being located within the air gap layer and constraining and supporting the thickness of the air gap layer, and the portion of the air gap layer outside the bumps forming a continuous air gap channel space; the dielectric layer is made of single-crystal aluminum oxide;

[0016] The preparation method of the discharge reactor comprises the following steps:

[0017] Step S1, preparing a single crystal alumina sheet;

[0018] Step S2, treating the surface of the single crystal aluminum oxide sheet by an etching process to form a dielectric layer having bumps on the surface;

[0019] Step S3, polishing the ends of the bumps;

[0020] Step S4, preparing an electrode layer, or forming an electrode layer on a single crystal alumina sheet;

[0021] Step S5 , aligning and laminating the dielectric layer and the electrode layer obtained through the above steps to obtain a discharge reactor.

[0022] Compared with the prior art, the beneficial technical effects of the present invention are as follows:

[0023] The discharge reactor and its preparation method of the present invention utilize bumps on the dielectric layer to limit and support the air gap, precisely controlling the air gap thickness and ensuring consistent air gap thickness. This ensures uniform discharge within the cavity and prevents sputtering or oxidation of electrode materials caused by localized discharge. Furthermore, the enhanced collisions between electrons and gas molecules improve ozone concentration and yield in the ozone generator, thereby enhancing discharge efficiency. The bump connections also enhance the stability of the dielectric and electrode layers, reducing loose displacement, maintaining a stable electric field, and ensuring stable operation of the device. Furthermore, the present invention provides an optimized manufacturing process, which helps improve production efficiency, product precision, and quality, reduce product rejection rates, and lower material and processing costs. Testing has shown that the ozone concentration of the discharge reactor of the present invention, when used as an ozone generator, is approximately 25% higher, and the ozone yield is approximately 20% higher, compared to discharge reactors using traditional dielectrics (ceramic, glass). BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 It is a structural schematic diagram of the discharge reactor according to Example 1 provided by the present invention.

[0025] Figure 2 It is a structural schematic diagram of the discharge reactor of Example 2 provided by the present invention.

[0026] Figure 3 It is a structural schematic diagram of the discharge reactor of Example 3 provided by the present invention.

[0027] Figure 4 Schematic diagram of the structure of the discharge reactor according to the fourth embodiment of the present invention.

[0028] Figure 5 It is a structural schematic diagram of the discharge reactor of Example 5 provided by the present invention.

[0029] Figure 6 Schematic diagram of the structure of the discharge reactor of Example 6 provided by the present invention.

[0030] Figure 7 Schematic diagram of the structure of the discharge reactor of Example 7 provided by the present invention.

[0031] Figure 8 yes Figure 7 sectional view of .

[0032] Figure 9 It is a structural schematic diagram of a dielectric layer and bumps provided by the present invention.

[0033] Figure 10 It is a structural schematic diagram of another dielectric layer and bump provided by the present invention.

[0034] Description of reference numerals in the accompanying drawings:

[0035] 11. First electrode layer; 12. Second electrode layer; 13. Third electrode layer; 21. First dielectric layer; 22. Second dielectric layer; 23. Third dielectric layer; 31. First air gap layer; 32. Second air gap layer; 33. Third air gap layer; 41. First bump; 42. Second bump; 43. Third bump; 5. Insulating layer. DETAILED DESCRIPTION

[0036] To make the objectives, technical solutions, and advantages of the present invention more clear, the technical solutions of the present invention will be clearly and completely described below in conjunction with the accompanying drawings. Obviously, the embodiments described are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts shall fall within the scope of protection of the present invention.

[0037] It should also be noted that, for ease of description, only the parts related to the invention are shown in the drawings. In the absence of conflict, the embodiments and features of the embodiments of the present invention may be combined with each other.

[0038] It should be noted that the concepts of "first" and "second" mentioned in the present invention are only used to distinguish different devices, modules or units, and are not used to limit the order or interdependence of the functions performed by these devices, modules or units.

[0039] It should be noted that the modifications of "one" and "multiple" mentioned in the present invention are illustrative rather than restrictive. Those skilled in the art should understand that unless otherwise clearly indicated in the context, it should be understood as "one or more".

[0040] The present invention provides a discharge reactor and a preparation method thereof, which are mainly intended to solve the problems of the existing discharge reactor such as the unsatisfactory air gap shape, low discharge efficiency, uneven discharge, and unstable discharge, and effectively ensure the thickness of the air gap. Among them, a discharge reactor based on the air gap optimization of a single crystal alumina (sapphire) dielectric layer and a preparation method thereof are typically provided, which uses single crystal alumina (sapphire) as the dielectric (dielectric layer), forms bumps on the surface through patterning, and optimizes the air gap thickness. In particular, for example, the uniformity of the air gap thickness can be achieved, which can be better applied to high-concentration ozone generation scenarios (such as water treatment, medical disinfection, semiconductor processes, etc.), and improve the ozone concentration (g / Nm 3 ) and ozone production rate (g / kWh).

[0041] See Figure 1The discharge reactor of the present invention includes electrode layers, which are generally metal electrodes arranged in parallel. The electrode layers include a first electrode layer and a second electrode layer. At least one dielectric layer and at least one air gap layer are stacked between the first and second electrode layers. The dielectric layer is adjacent to the air gap layer, and the electrode layer may optionally be adjacent to the dielectric layer and / or the air gap layer. The surface of at least one dielectric layer is configured with multiple protrusions. The protrusions are located within the air gap layer and restrict and support the thickness of the air gap layer. The portion of the air gap layer outside the protrusions forms a continuous air gap channel space (or discharge chamber). In other words, the dielectric layer contacts or connects with a designated component via the protrusions, thereby forming an air gap channel space between the two (the air gap layer can be understood as the layer where the air gap channel space is located). When the electrodes are energized, discharge occurs in the air gap channel space. The air gap channel space allows for the input and reaction of raw gas, and for the output of products. The presence of the protrusions does not affect the integrity of the air gap channel space. The protrusions form a restrictive and support structure within the air gap layer, acting like pillars within the air gap layer. The air gap thickness can be adjusted by varying the height of the bumps, thereby ensuring consistent air gap thickness. For example, through patterned etching or deposition, bumps of the desired shape, size (especially the height of the bumps relative to the rest of the material), and distribution can be precisely formed on the dielectric layer surface. This ensures the desired bump height, and when the various components of the discharge reactor are assembled, the desired air gap thickness and shape distribution (e.g., consistent thickness or other desired specific shape) can be achieved.

[0042] As a supplemental explanation, the first electrode layer 11 and the second electrode layer 12 are spaced apart by a predetermined distance, for example, in parallel or concentric arrangement. The spacing between the electrode layers corresponds to the dielectric layer and the air gap layer therein. The electrode layers have connectors for conducting electricity. Generally, the electrode layer on one side is connected to a predetermined high voltage, and the electrode layer on the other side is grounded to form the desired electric field. Gas channels are generally provided on the sides of the electrode layers, or the entire structure is located within the gas channels. The gas channels are used for material transport and communicate with the air gap channel space (discharge chamber). This enables the desired gas discharge to occur. The basic principles of dielectric barrier discharge and other required components and operating methods of the discharge reactor are known in the art and will not be elaborated upon here.

[0043] In some embodiments of the present invention, a first electrode layer 11 and a second electrode layer 12 are arranged in parallel, and the first electrode layer 11 and the second electrode layer 12 are arranged at intervals in a direction perpendicular to the layer (plate surface) and at a preset distance; the dielectric layer includes a first dielectric layer 21, and the first dielectric layer 21 is arranged on the first electrode layer 11 or the second electrode layer 12, and a plurality of first bumps 41 are constructed on the surface of the first dielectric layer 21, and the first bumps 41 are respectively connected to the first electrode layer 11 and / or the second electrode layer 12 to construct and maintain an air gap channel space formed between the first dielectric layer 21 and the first electrode layer 11 and / or the second electrode layer 12.

[0044] In the discharge reactor provided by the embodiment of the present invention, a first bump 41 is provided on the first dielectric layer 21 to form an air gap with the electrode layer. This allows precise control of the thickness of the air gap, uniform distribution of the electric field, enhanced collisions between electrons and gas molecules, improved discharge efficiency, and increased ozone concentration and yield in an ozone generator. Furthermore, the bump structure connection enhances the stability of the first dielectric layer 21 and the first electrode layer 11 / second electrode layer 12, reduces loose displacement, maintains electric field stability, and ensures stable operation of the equipment. Furthermore, the manufacturing process is simplified, material and processing costs are reduced, production efficiency is improved, and product rejection rates are reduced.

[0045] The first electrode layer 11 and the second electrode layer 12 are electrically connected and arranged in parallel at a preset distance in a direction perpendicular to the plate surface, thereby constructing a stable discharge space infrastructure. This parallel spacing arrangement enables the electric field to be more evenly distributed between the two electrode layers. From the perspective of discharge principle, a uniform electric field distribution helps gas molecules to be ionized and excited more orderly under the action of the electric field. In the application scenario of an ozone generator, the high-energy electrons generated by gas ionization can collide more stably with oxygen molecules, promote the reaction of oxygen to ozone to proceed more efficiently, reduce the ineffective discharge area caused by uneven electric field, thereby effectively improving discharge efficiency and increasing ozone production rate and concentration.

[0046] The first dielectric layer 21 is disposed on the electrode layer and has a plurality of first bumps 41 constructed on its surface. The bumps are connected to the electrode layer to form an air gap. The present invention eliminates the need for gaskets or similar parts. Instead, the first bumps 41 are directly constructed on the surface of the first dielectric layer 21 to replace traditional gaskets. This fundamentally eliminates the impact of part dimensional errors and errors generated during the assembly process on the air gap (such as height inconsistencies caused by gasket bonding), thereby achieving higher precision, such as an air gap thickness tolerance of ≤5μm. In addition, the prior art uses a gasket-like structure, resulting in a relatively large air gap thickness, which is detrimental to device performance such as discharge efficiency. The present invention, however, can stably achieve a smaller air gap thickness (e.g., micron-level). The high consistency of the first bumps 41 allows for more precise control of the air gap thickness. During the discharge process, the stable and consistent air gap thickness ensures uniform electric field strength within the air gap. According to Paschen's law, a suitable and uniform air gap thickness can enable the gas to stably break down and discharge at a relatively low voltage, reducing the abnormal discharge phenomenon caused by excessive or weak local electric fields due to differences in air gap thickness, improving the stability and efficiency of the discharge, and thus improving the overall performance of the ozone generator.

[0047] The first dielectric layer 21 is connected to the first electrode layer 11 / second electrode layer 12 via first bumps 41 to create an air gap. This structure enhances the stability of the entire discharge reactor. The first bumps 41 not only support and create the air gap, but also strengthen the connection between the first dielectric layer 21 and the first electrode layer 11 / second electrode layer 12. Compared to traditional structures, this reduces structural loosening and displacement caused by unstable gasket connections. With a consistent air gap thickness, uniform discharge is ensured, preventing sputtering or oxidation of the electrode material caused by localized discharge.

[0048] Furthermore, by constructing bumps on the surface of the first dielectric layer 21 to create an air gap, the structure of the discharge reactor is simplified. Compared to conventional complex structures using multiple gaskets, this reduces the use of gasket material and the number of glue bonding steps. This simplified structure not only reduces material costs but also reduces the processing difficulty and assembly errors associated with complex structures, thereby improving production efficiency and reducing production costs. Furthermore, the first bumps 41 can be directly manufactured using a laser processing process, ensuring not only high consistency but also uniform distribution.

[0049] The connection between the dielectric layer and the electrode layer can be either contact or connection. Contact refers to, for example, being limited or compressed by an external structure, while connection refers to a fixed connection, for example, by glue or other means. The position and distribution of the dielectric layer and the patterned bumps within the overall structure can vary. This is described in detail below with reference to the embodiments shown in the accompanying drawings.

[0050] For example Figure 1In the illustrated embodiment 1, two dielectric layers are disposed between the two electrode layers, with patterned bumps formed on the surface of either dielectric layer for support. Specifically, the dielectric layers comprise two layers: a first dielectric layer 21 and a second dielectric layer 22; the air gap layer comprises a first air gap layer 31; and the bumps comprise first bumps 41. The first electrode layer 11, the first dielectric layer 21, the first air gap layer 31, the second dielectric layer 22, and the second electrode layer 12 are disposed sequentially, specifically forming a stacked structure adjacent to each other. The first bumps 41 of the first dielectric layer 21 contact or connect with the second dielectric layer 22 to create an air gap between the first dielectric layer 21 and the second dielectric layer 22, ensuring the stability of the air gap thickness. While the first bump 41 creates an air gap between the first dielectric layer 21 and the electrode layer, it also precisely controls the thickness of the air gap between the first dielectric layer 21 and the second dielectric layer 22. This high-precision air gap thickness control makes the electric field strength in the two air gaps more stable. According to Paschen's law, stable air gap thickness and electric field strength help achieve stable discharge at lower voltages, reduce the problem of unstable breakdown voltage caused by air gap thickness fluctuations, reduce energy consumption, and improve the stability and reliability of the discharge reactor. In addition, the second dielectric layer 22 is arranged relatively parallel to the first dielectric layer 21 and the air gap is created by the first bump 41, which optimizes the electric field distribution within the discharge reactor. The two parallel dielectric layers make the electric field more evenly distributed in the air gap between them. Compared with the absence of the second dielectric layer 22, the electric field distribution range is wider and more stable. According to electric field theory, a uniformly distributed electric field can make the forces on gas molecules in the electric field more balanced, and the probability of gas molecules being ionized and excited is more consistent during the discharge process. This avoids the situation where some areas discharge excessively and some areas discharge insufficiently due to uneven electric field distribution, thereby improving the discharge efficiency of the entire discharge area.

[0051] Further, in Figure 1 In the illustrated embodiment 1, an insulating layer 5 is also included. This insulating layer 5 is adhered to the outer surfaces of the first electrode layer 11 and the second electrode layer 12 to provide insulation and protection. More specifically, the insulating layer 5 is, for example, aluminum oxide (Al2O3) and can be formed by deposition. The electrode layers (first electrode layer 11 and second electrode layer 12) are, for example, silver electrodes. The dielectric layers (first dielectric layer 21 and second dielectric layer 22) and the first bumps 41 thereon are preferably single-crystalline aluminum oxide (sapphire). Figure 1 The middle air gap is horizontal, and when working, for example, air enters from the left side and exits from the right side.

[0052] Figure 2 The second embodiment shown can be regarded as Figure 1The principle of the structure shown is a schematic diagram or a simplified variant form. Among them, there are two dielectric layers, namely a first dielectric layer 21 and a second dielectric layer 22; the air gap layer is a first air gap layer 31; and the bump is a first bump 41. The first electrode layer 11, the first dielectric layer 21, the first air gap layer 31, the second dielectric layer 22, and the second electrode layer 12 are arranged in sequence, specifically to form a stacked structure adjacent to each other in sequence. The first dielectric layer 21 has the first bump 41 only on one side, and the end (or top, end) of the first bump 41 is in contact with or connected to the second dielectric layer 22, and the first air gap layer 31 is formed between the first dielectric layer 21 and the second dielectric layer 22. Furthermore, Figure 2 In the embodiment shown, the first electrode layer 11 is connected to high voltage and the second electrode layer 12 is grounded. Of course, the connected and grounded electrode layers may be opposite, or the first bump 41 may be located on the second dielectric layer 22, etc. The structures and concepts of these variant embodiments are essentially the same.

[0053] Figure 3In the third embodiment shown, the dielectric layer is a first dielectric layer 21, the air gap layer is a first air gap layer 31, and the bumps are first bumps 41. The first electrode layer 11, the first air gap layer 31, the first dielectric layer 21, and the second electrode layer 12 are arranged in this order. Furthermore, one of the first and second electrode layers 11, 12 (the first electrode layer 11 in the figure) is connected to a high voltage, while the other (the second electrode layer 12 in the figure) is grounded. The first dielectric layer 21 includes opposing first and second surfaces. First bumps 41 are constructed only on the first surface of the first dielectric layer 21. The ends of the first bumps 41 abut against the first electrode layer 11, forming an air gap between the first surface of the first dielectric layer 21 and the first electrode layer 11. The second surface of the first dielectric layer 21 is in contact with or connected to the second electrode layer 12. This arrangement makes the position and thickness of the air gap clear and controllable, ensuring the precision of the discharge area. A first bump 41 is constructed on the first surface of the first dielectric layer 21, with its end abutting against the first electrode layer 11 to create an air gap. This design allows for precise control of the air gap thickness. Compared to the traditional method of forming an air gap by gluing multiple gaskets together, this avoids the problem of inconsistent columnar structure height caused by gasket bonding. Because the first bump 41 is constructed directly on the surface of the first dielectric layer 21, precise machining processes (such as laser processing) can be used to maintain a bump height tolerance of ≤5μm, thereby ensuring a uniform air gap thickness between the first surface of the first dielectric layer 21 and the first electrode layer 11. A stable and consistent air gap thickness is a key factor in the stable operation of the discharge reactor, providing a stable foundation for subsequent electric field distribution and discharge reactions. The second surface of the first dielectric layer 21 abuts the second electrode layer 12. This close contact structure further enhances the stability of the discharge reactor, reducing electric field distortion and discharge instability that can be caused by a gap between the second electrode layer 12 and the first dielectric layer 21. During the entire discharge process, the first dielectric layer 21 plays a good role of isolation and support, stably separating the first electrode layer 11 and the second electrode layer 12, while ensuring the effective transmission and action of the electric field between the two electrode layers.

[0054] Figure 4 The fourth embodiment shown is Figure 3 A variant structure of the embodiment shown is mainly different in structure only in the position and orientation of the first bump 41 of the first dielectric layer 21, or in other words, only the electrically connected and grounded electrode layers are opposite, while the structure and concept are essentially the same.

[0055] In some embodiments, a second dielectric layer 22 is further included. The second dielectric layer 22 is disposed within the first electrode layer 11 or the second electrode layer 12, and is arranged parallel to or concentrically with the first dielectric layer 21. This structure increases the area for the discharge reaction. Building upon the air gap created by the first dielectric layer 21 and the first electrode layer 11 (or second electrode layer 12), the air gap between the first dielectric layer 21 and the second dielectric layer 22 becomes a new discharge reaction space. The simultaneous participation of both air gaps in the discharge reaction effectively increases the area for interaction between the gas and the electric field. For example, in an ozone generator, more oxygen molecules can be ionized and excited within these two air gaps, promoting the conversion of oxygen to ozone and thereby increasing both the amount and efficiency of ozone production.

[0056] Figure 5 In the fifth embodiment shown, the dielectric layer is a first dielectric layer 21; the air gap layer comprises two layers, a first air gap layer 31 and a second air gap layer 32; and the bumps are first bumps 41, which are disposed on both sides of the first dielectric layer 21. The first electrode layer 11, the first air gap layer 31, the first dielectric layer 21, the second air gap layer 32, and the second electrode layer 12 are disposed in this order. Furthermore, one of the first and second electrode layers 11 and 12 (the first electrode layer 11 in the figure) is connected to a high voltage, while the other (the second electrode layer 12 in the figure) is grounded. The first dielectric layer 21 includes opposing first and second surfaces, each of which is provided with first bumps 41. The ends of the first bumps 41 on both surfaces of the first dielectric layer 21 abut against the first and second electrode layers 11 and 12, respectively, thereby forming air gaps between the first dielectric layer 21 and the first and second electrode layers 11 and 12. The presence of air gaps on both sides of the first dielectric layer 21 enhances the symmetry and uniformity of the discharge area. During the actual discharge process, the symmetrical and uniform distribution of the air gap allows the electric field to act on the gas on both sides of the first dielectric layer 21 simultaneously, increasing the area of ​​gas ionization and reaction, increasing the amount of ozone generated per unit time, and helping to improve the production capacity and efficiency of the ozone generator. Compared with the traditional structure in which only one side of the air gap participates in the discharge reaction, the design of the first dielectric layer 21 having first bumps 41 on both sides and forming air gaps with the two electrode layers allows the gas to be ionized and reacted simultaneously in the two air gaps, increasing the area of ​​interaction between the gas and the electric field. In the same time, more gas molecules can be ionized and excited, providing more active particles for the chemical reaction. For ozone production, this means that more oxygen molecules can be converted into ozone, thereby significantly increasing the amount and efficiency of ozone generation and improving the production capacity of the discharge reactor.

[0057] See also Figure 6In some embodiments, the electrode layer further comprises a third electrode layer 13, which is disposed outside the first electrode layer 11 or the second electrode layer 12. At least one dielectric layer and at least one air gap layer are stacked between the third electrode layer 13 and the adjacent first electrode layer 11 or second electrode layer 12. The dielectric layer stacked between the third electrode layer and the adjacent first electrode layer or second electrode layer is adjacent to the air gap layer. The surface of the at least one dielectric layer disposed between the third electrode layer and the adjacent first electrode layer or second electrode layer is structured with a plurality of protrusions. The plurality of protrusions are located within the air gap layer and form a limit and support for the thickness of the air gap layer. A through air gap channel space is formed in the portion of the air gap layer between the third electrode layer and the adjacent first electrode layer or second electrode layer outside the protrusions. In other words, the above or other feasible two-electrode structures can be combined to form a structure with three or more layers of electrodes.

[0058] Furthermore, Figure 6 In the illustrated sixth embodiment, the third electrode layer 13 is located outside the second electrode layer 12. In other words, the second electrode layer 12 is located between the first electrode layer 11 and the third electrode layer 13. The dielectric layer between the first electrode layer 11 and the second electrode layer 12 is a first dielectric layer 21, the air gap layer between the first electrode layer 11 and the second electrode layer 12 is a first air gap layer 31, and the bumps between the first electrode layer 11 and the second electrode layer 12 are first bumps 41. The dielectric layer between the third electrode layer 13 and the second electrode layer 12 is a third dielectric layer 23, the air gap layer between the third electrode layer 13 and the second electrode layer 12 is a third air gap layer 33, and the bumps between the third electrode layer 13 and the second electrode layer 12 are third bumps 43. The first electrode layer 11, first dielectric layer 21, first air gap layer 31, second electrode layer 12, third air gap layer 33, third dielectric layer 23, and third electrode layer 13 are arranged in this order. Furthermore, in the illustrated embodiment, the first electrode layer 11 and the third electrode layer 13 are grounded, while the second electrode layer 12 is connected to a high voltage. One side of the first dielectric layer 21 has a first bump 41, which contacts or connects to the second electrode layer 12 to form a first air gap layer 31. One side of the third dielectric layer 23 has a third bump 43, which contacts or connects to the other side of the second electrode layer 12 to form a third air gap layer 33. This structure effectively introduces a new electric field source between the two dielectric layers, creating a more complex and diverse electric field distribution. The interaction between the three electrode layers and the multiple air gaps between the two dielectric layers enables the gas to undergo a richer range of physical and chemical reactions under the composite electric field environment. During ozone generation, the composite electric field excites the gas to produce a wider variety of higher-energy active particles. These active particles participate in the ozone generation reaction, greatly promoting ozone production and significantly increasing ozone yield and concentration, giving the discharge reactor a greater advantage in high-concentration ozone generation.

[0059] See also Figure 7 、 Figure 8 In some embodiments, the electrode layer (e.g., the first electrode layer 11, the second electrode layer 12), the dielectric layer, and the air gap layer are nested in a tubular (or cylindrical, columnar) structure to form a tubular discharge reactor. Figure 1 The embodiment shown is bent and connected to form a tubular shape. Of course, other embodiments can also make such tubular changes to form a tubular discharge reactor. Figure 7 、 Figure 8 In the seventh embodiment shown, the second electrode layer 12, the second dielectric layer 22, the first air gap layer 31, the first dielectric layer 21, and the first electrode layer 11 are arranged sequentially from the outside to the inside. Preferably, an insulating layer 5 is also provided outside the second electrode layer 12 and inside the first electrode layer 11 to provide insulation and protection. The shapes of the various parts match and are coaxially arranged. The protrusion is a first protrusion 41, which is located outside the first dielectric layer 21 and contacts or connects to the inner side of the second dielectric layer 22 to form the first air gap layer 31. The tubular structure design is conducive to the concentrated distribution of the electric field and the flow of gas. The tubular structure makes the electric field more uniform in the radial direction, reducing the edge effect loss of the electric field. At the same time, in terms of gas flow, the tubular structure provides a more regular flow channel for the gas, which is conducive to the uniform distribution of the gas between the electrode layer and the dielectric layer. In the ozone generator, uniform electric field distribution and gas flow ensure that the discharge reaction proceeds stably and efficiently throughout the entire columnar area, improving the uniformity and efficiency of ozone generation and enabling the device to maintain good performance while maintaining a compact structure.

[0060] The bumps can be in various shapes, such as columnar (such as cylindrical, square, etc.), blocky, spherical (such as spherical, hemispherical, etc.), sawtooth or conical structures. Figure 9 In the embodiment shown, square columnar bumps are used, and further, a square dielectric layer (square single crystal aluminum oxide sheet) is used. Figure 10In the illustrated embodiment, cylindrical bumps are used, and furthermore, a circular dielectric layer (a circular single-crystal aluminum oxide sheet) is employed. Different bump shapes can have unique effects on the electric field distribution around them. For example, the sharp shape of the jagged bumps creates a strong local electric field at the tip. This strong local electric field can more easily ionize the gas, generate more initial electrons, and trigger more discharge channels, thereby enhancing the discharge effect. Spherical bumps make the electric field distribution relatively more uniform, which is conducive to maintaining stable discharge within a certain area. Conical bumps concentrate the electric field at their tips, which can enhance local discharge intensity and promote gas ionization. Columnar bumps can achieve a relatively uniform electric field distribution within a certain range, maintaining a stable discharge area. The choice of a variety of bump shapes provides more possibilities for optimizing the performance of the discharge reactor. Based on different application requirements and discharge conditions, the most suitable bump shape can be selected to achieve the best discharge effect and improve ozone generation efficiency and concentration. In addition, more than two bump shapes can be designed to coexist as needed. For example, second bumps 42 of various shapes cooperate with first bumps 41 to further optimize the electric field distribution and discharge effect of the entire discharge area, which helps to improve the performance of the discharge reactor and meet specific usage requirements.

[0061] In some embodiments, for example Figures 7 to 10 As shown, the bumps are small and numerous, evenly distributed across the dielectric layer surface, and all have the same height (e.g., a tolerance of ≤5μm). The uniform height of the bumps ensures consistent air gap thickness. As previously mentioned, uniform air gap thickness is crucial for stable and efficient discharge. From a microscopic perspective, the uniform height of the bumps ensures a uniform distribution of electric field strength within the air gap, avoiding localized electric field overstrength or understrength due to variations in air gap thickness. Macroscopically, this uniform electric field distribution ensures uniform discharge across the entire electrode and dielectric layers, improving discharge efficiency and reducing damage to the device from local overheating or abnormal discharge, thereby enhancing the overall performance and stability of the discharge reactor.

[0062] Optionally, when two or more air gap layers are constructed, the thickness of the two or more air gap layers is equal. The equal thickness of the air gaps constructed ensures the similarity of the electric field distribution in the air gaps. In the discharge reactor, the uniform electric field distribution makes the ionization and reaction processes of the gas in the two gaps consistent. This consistency makes the performance of the discharge reactor more stable and reduces the discharge unevenness caused by the difference in air gap thickness. For example, in an ozone generator, the similar electric field environment in the two gaps can allow the gas to be efficiently converted into ozone in both areas at the same time, thereby improving the uniformity and overall generation efficiency of ozone generation, thereby improving the performance and product quality of the discharge reactor.

[0063] In some embodiments, an insulating layer 5 is further included. The insulating layer 5 is disposed on the outer surface of the electrode layer outside the discharge reactor, for example Figure 1 、 Figure 7 、 Figure 8 As shown. The insulating layer 5 covers the outer surface of the electrode layer and is set to avoid the air gap, playing a key role in insulation and protection. When the discharge reactor is working, a high voltage is loaded on the electrode layer. If there is no insulating layer 5, the current will easily leak into the surrounding environment, which will not only cause energy loss but also may cause safety accidents. The presence of the insulating layer 5 effectively prevents current leakage, concentrates the electric field energy in the air gap, and is used to drive the gas discharge reaction, thereby improving energy utilization efficiency. At the same time, the insulating layer 5 also protects the electrode layer from erosion by the external environment, prolongs the service life of the electrode layer, and ensures the long-term stable operation of the discharge reactor.

[0064] Preferably, the dielectric layer is a single-crystal aluminum oxide layer, and the dielectric layer material is selected from single-crystal aluminum oxide (sapphire). Optionally, the single-crystal aluminum oxide layer (sheet) is derived from an industrially mass-produced sapphire substrate and can be in various shapes such as round, square, or tubular.

[0065] Preferably, the design value of the air gap layer thickness ranges from 20 μm to 200 μm, which is significantly reduced compared to the existing air gap thickness and better conforms to Paschen's law. The difference between the actual value of the air gap layer thickness and the design value is ≤ 5 μm, and the actual value of the air gap layer thickness is controlled by the bumps. The actual value of the air gap layer thickness is further preferably around 100 μm.

[0066] Preferably, the electrode layer is a patterned electrode layer, and the electrode layer is empty at the position corresponding to the bump (the position of the orthographic projection); in other words, the electrode layer has holes corresponding to the bump position, and the coverage of the electrode layer avoids the bump position. This structure is formed by, for example, processing the electrode layer by a laser process, or the electrode layer adopts an electroplating process with a patterned template to form an electrode layer in a specific pattern area. The curvature radius of the top of the bump is usually relatively small (especially for bumps with a sawtooth or conical structure). If there is also an electrode at the bump, it is easy to cause arc breakdown under high voltage, reducing the life of the dielectric layer. This solution can effectively avoid this problem.

[0067] Based on the discharge reactor of the present invention, the present invention further provides a method for preparing a discharge reactor, wherein the discharge reactor includes at least two electrode layers, at least one dielectric layer and at least one air gap layer are stacked between the electrode layers, the dielectric layer is adjacent to the air gap layer, and the surface of at least one dielectric layer is structured with multiple protrusions, the protrusions are located within the air gap layer and form a limit and support for the thickness of the air gap layer, and the portion of the air gap layer outside the protrusions forms a through air gap channel space; the material of the dielectric layer is single crystal aluminum oxide.

[0068] The preparation method of the discharge reactor comprises the following steps:

[0069] Step S1, preparing a single crystal alumina sheet;

[0070] Step S2, treating the surface of the single crystal aluminum oxide sheet by an etching process to form a dielectric layer having bumps on the surface;

[0071] Step S3, polishing the ends of the bumps;

[0072] Step S4, preparing an electrode layer, or forming an electrode layer on a single crystal alumina sheet;

[0073] Step S5 , aligning and laminating the dielectric layer and the electrode layer obtained through the above steps to obtain a discharge reactor.

[0074] In the embodiment (prepared Figure 1 The structure shown in FIG. 1 is taken as an example) and specifically includes the following steps.

[0075] Paschen's law indicates that the optimal discharge gap (air gap thickness) is approximately 20 μm. This is the theoretical value of the air gap corresponding to the minimum breakdown voltage at 1 atmosphere without any dielectric. However, based on engineering experience and existing processes, this theoretical value is too extreme, easily causing dielectric breakdown and reducing dielectric stability and lifespan. Therefore, a discharge gap of 100 μm to 200 μm is recommended. In this embodiment, the air gap thickness is set to 100 μm.

[0076] 1. Single crystal alumina (sapphire) surface patterning:

[0077] Prepare a single crystal alumina sheet. First, use ultrasonic cleaning to clean the single crystal alumina sheet (sapphire sheet). Preferably, wash it multiple times with acetone, isopropyl alcohol, and deionized water in sequence, and then blow it dry with nitrogen.

[0078] A femtosecond laser layered etching process (also referred to as laser etching) forms uniformly distributed bumps (height tolerance ≤ 5μm) on the surface of a single-crystal alumina wafer. The laser etching equipment, for example, uses a femtosecond laser with an energy density of 5J / cm² to 10J / cm², a spot diameter of ≤10μm (flat-top spot), a scanning speed of 100mm / s to 500mm / s, and a layered etching process of 100μm divided into 20 layers (5μm per layer). The bump array pattern is designed using CAD, and the etching process is programmed layer by layer to avoid the bump areas. The confocal microscope system of the laser etching equipment uses real-time Z-axis adjustment to maintain focus accuracy (error ≤ 5μm). The energy is reduced by 5% after each layer scan to compensate for heat buildup. Argon gas is purged for debris (5L / min). A white-light interferometer is used to measure the height every five layers, and the scan rate is adjusted based on this feedback. In this way, etching is performed layer by layer, and the convex points of each layer are retained and not etched, so that relatively raised convex points are finally obtained. This processing method can ensure higher precision.

[0079] Next, the tip (top) is polished using diamond slurry (CMP) (Ra < 20nm, height loss ≤ 2μm). Polishing the bump tip prevents uneven bump surfaces that can cause localized contact problems. Organic matter is removed using oxygen plasma (the oxygen plasma equipment can operate at 200W for 5 minutes).

[0080] 2. Electrode (electrode layer) preparation:

[0081] (1) Seed layer preparation:

[0082] Using laser direct writing activation, a femtosecond laser induces the formation of a conductive layer (such as a graphitized seed layer) on the sapphire surface in the target area; or, for example, the seed layer is made of gold (Au) and / or chromium (Cr).

[0083] (2) Electroplating thickening:

[0084] The electrode can be closely fitted to the contact surface of the single crystal aluminum oxide sheet through selective electroplating, and the bump area can be graphically avoided. For example, in the electroplating solution (for example, if the electrode layer is selected as a gold plating layer, the electroplating solution can be selected as a potassium gold cyanide gold plating solution; if the electrode layer is selected as a silver plating layer, the electroplating solution can be selected as a potassium silver cyanide silver plating solution), the electroplating area is limited by a photoresist template; the current density is controlled (1A / dm²~2A / dm²), and electroplating is performed to the desired thickness (such as 50μm).

[0085] (3) Post-processing:

[0086] Chemical etching removes the seed layer (such as KI / I2 solution to corrode gold or graphitize the seed layer, Ce(SO4)2 to corrode chromium). As a more specific supplementary explanation, the bonding between the electroplated layer and the sapphire is essentially mechanical interlocking. Micropores and other structures are etched on the sapphire surface by laser, and then filled with electroplated metal to form a physical lock. When the seed layer is subsequently corroded and removed, as long as the thickness of the electroplated layer is sufficient (>20μm) and the interlocking is firm, the bonding effect can be guaranteed and no falling off will occur.

[0087] Oxygen plasma cleaning removes residual organic matter. More specifically, the residual organic matter mainly includes organic matter that may be left after cleaning the single crystal aluminum oxide wafer, photoresist residue, and organic stabilizers in the etching solution;

[0088] Insulating layer deposition: PECVD deposits Al2O3 (thickness 0.2 mm) to cover the electrode and form an insulating layer.

[0089] 3. Alignment and fitting:

[0090] Optical alignment: Two single-crystal alumina sheets are bonded parallel to each other (optionally by gluing), with an air gap thickness of 100μm and a pressure of 5kPa. As a supplementary note, in some embodiments, when the bumps of the single-crystal alumina sheet are directly bonded to the electrode layer, the electrode layer can be patterned (avoiding the bumps) and electroplated on the other side of the alumina ceramic surface (which can be the insulating layer 5). The bumps and the alumina ceramic are then connected using a specific glue.

[0091] After preparation, performance test is carried out:

[0092] Oxygen (flow rate 20L / min, purity ≥99.9%) was introduced and 3kV / 10kHz AC was applied. The results showed that the ozone concentration was 25% higher than that of the discharge reactor using conventional alumina ceramic dielectric, and the ozone yield was increased by 20%.

[0093] In summary, compared with the prior art, the present invention has the following characteristics and beneficial technical effects.

[0094] Traditional discharge reactors mostly use glass, ceramics or polycrystalline alumina as dielectric materials, which have the following problems:

[0095] 1. Air gap optimization issue: The air gap thickness is not optimized based on Paschen's law. Inappropriate air gap thickness will lead to excessively high breakdown voltage (>5kV) or low discharge efficiency, low ozone production rate, and may also cause the dielectric layer to withstand excessive electric field and breakdown.

[0096] 2. Process limitations: Traditional processes are difficult to process and it is difficult to achieve a micron-level air gap thickness. In addition, the control accuracy is insufficient (tolerance > ±20μm), resulting in uneven discharge.

[0097] Material Properties: Alumina ceramics are limited in strength due to their polycrystalline structure and grain boundary defects, while the amorphous state and surface microcracks of glass weaken their ability to withstand high pressures, making them more susceptible to breakdown by high pressures than sapphire. Furthermore, alumina ceramics and glass are chemically unstable and susceptible to corrosion, and have low thermal conductivity, resulting in poor heat dissipation. Both factors contribute to low ozone concentrations and production rates.

[0098] This invention uses sapphire as the dielectric layer in the discharge reactor and optimizes the air gap, achieving a coordinated optimization of the air gap thickness and electric field distribution, thereby improving the ozone concentration and ozone yield of the ozone generator. The production and processing technology of sapphire substrates is mature, and the device quality is good, making it suitable for industrial discharge reactors.

[0099] The core innovations of the present invention include:

[0100] 1. Single-crystal alumina (sapphire) bump support structure: Laser micromachining and other techniques are used to create uniformly distributed bumps (height tolerance ≤ 5μm) on the surface of single-crystal alumina (sapphire). This ensures consistent air gap thickness, uniform discharge within the cavity, and avoids sputtering or oxidation of the electrode material caused by localized discharge. The dielectric layer of single-crystal alumina (sapphire) boasts higher compressive strength than alumina ceramics and glass, allowing it to withstand higher voltages (≥35kV / mm), reducing the risk of breakdown. Single-crystal alumina (sapphire) is chemically stable, corrosion-resistant, and aging-resistant, extending its lifespan compared to traditional dielectrics (ceramics and glass). Single-crystal alumina (sapphire) has a high thermal conductivity (~35W / m•K). Combined with a heat dissipation system, it effectively dissipates heat generated by the dielectric layer, preventing localized overheating and improving the stability of the ozone generator. The production technology for single-crystal alumina (sapphire) substrates is mature, resulting in high-quality devices and amenable to mass production at a low cost.

[0101] 2. Air Gap Thickness Optimization: Based on Paschen's law and engineering experience, the air gap thickness is controlled within a range with high discharge efficiency, balancing the breakdown voltage and ozone concentration. Paschen's law describes the relationship between the gas breakdown voltage Vb and the product of the gas pressure p and the air gap thickness d: Vb = f(p·d). For dry air or oxygen, the minimum breakdown voltage occurs when p·d is approximately 0.5 torr·cm to 1 torr·cm. At this point, Vb corresponds to the minimum breakdown voltage of the gas. Determining p allows the theoretical minimum value of d to be calculated, and adjustments are made based on engineering experience to achieve optimal discharge efficiency.

[0102] Optimizing the air gap at normal pressure (e.g., reducing it to 0.1-0.2mm) can significantly reduce the operating voltage and energy consumption, thereby improving discharge efficiency. This can enhance the effective collision between high-energy electrons and oxygen molecules, promote the conversion of O2 to O3, and thus increase ozone concentration.

[0103] After testing, the discharge reactor of the present invention is used as an ozone generator, and the ozone concentration (g / Nm 3 ) is about 25% higher than that of discharge reactors using traditional dielectrics (ceramics, glass); the ozone production rate (g / kWh) is about 20% higher than that of discharge reactors using traditional dielectrics (ceramics, glass).

[0104] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the various embodiments of the present invention.

Claims

1. A discharge reactor, characterized in that: The invention comprises an electrode layer, wherein the electrode layer comprises a first electrode layer and a second electrode layer, at least one dielectric layer and at least one air gap layer are stacked between the first electrode layer and the second electrode layer, the dielectric layer is adjacent to the air gap layer, a surface structure of the at least one dielectric layer is provided with a plurality of convex points, the convex points are located in the air gap layer and form a restriction and support for the thickness of the air gap layer, and the portion of the air gap layer other than the convex points forms a through air gap channel space; the convex points are formed on the surface of the dielectric layer by a laser layered etching process; the convex points are evenly distributed on the surface of the dielectric layer and all the convex points have the same height; the electrode layer is a patterned electrode layer, and the electrode layer is empty at positions corresponding to the convex points; the thickness of the air gap layer is 20 μm to 200 μm.

2. The discharge reactor according to claim 1, characterized in that The dielectric layer is a first dielectric layer and a second dielectric layer, the air gap layer is a first air gap layer, and the first electrode layer, the first dielectric layer, the first air gap layer, the second dielectric layer, and the second electrode layer are arranged in sequence.

3. The discharge reactor according to claim 1, characterized in that The dielectric layer is a first dielectric layer, the air gap layer is a first air gap layer, the first electrode layer, the first air gap layer, the first dielectric layer, and the second electrode layer are arranged in sequence; or, The dielectric layer is a first dielectric layer, the air gap layer is a first air gap layer and a second air gap layer, and the first electrode layer, the first air gap layer, the first dielectric layer, the second air gap layer, and the second electrode layer are arranged in sequence.

4. The discharge reactor according to claim 1, characterized in that The electrode layer also includes a third electrode layer, which is arranged outside the first electrode layer or the second electrode layer, and at least one dielectric layer and at least one air gap layer are stacked between the third electrode layer and the adjacent first electrode layer or the second electrode layer; the dielectric layer stacked between the third electrode layer and the adjacent first electrode layer or the second electrode layer is adjacent to the air gap layer, and the surface structure of the at least one dielectric layer arranged between the third electrode layer and the adjacent first electrode layer or the second electrode layer has multiple protrusions, and the multiple protrusions are located in the air gap layer and form a restriction and support for the thickness of the air gap layer, and a through air gap channel space is formed in the part of the air gap layer between the third electrode layer and the adjacent first electrode layer or the second electrode layer other than the protrusions.

5. The discharge reactor according to claim 4, characterized in that The third electrode layer is located outside the second electrode layer, the dielectric layer between the first electrode layer and the second electrode layer is a first dielectric layer, the air gap layer between the first electrode layer and the second electrode layer is a first air gap layer, the dielectric layer between the third electrode layer and the second electrode layer is a third dielectric layer, and the air gap layer between the third electrode layer and the second electrode layer is a third air gap layer. The first electrode layer, the first dielectric layer, the first air gap layer, the second electrode layer, the third air gap layer, the third dielectric layer, and the third electrode layer are arranged in sequence.

6. The discharge reactor according to claim 1, characterized in that The electrode layer, the dielectric layer and the air gap layer are in a nested tubular structure.

7. The discharge reactor according to any one of claims 1 to 6, characterized in that: The bumps are in the shape of columns, blocks, balls, saw teeth or cones.

8. The discharge reactor according to any one of claims 1 to 6, characterized in that: The dielectric layer is a single crystal aluminum oxide layer; and / or further comprises an insulating layer, which is arranged on the outer surface of the electrode layer outside the discharge reactor.

9. A method for preparing a discharge reactor, characterized in that: The discharge reactor includes at least two electrode layers, at least one dielectric layer and at least one air gap layer stacked between the electrode layers, the dielectric layer being adjacent to the air gap layer, and a plurality of bumps formed on the surface of at least one dielectric layer. The bumps are located within the air gap layer and form a limit and support for the thickness of the air gap layer, and the portion of the air gap layer outside the bumps forms a through-going air gap channel space. The dielectric layer is made of single-crystal aluminum oxide; the bumps are evenly distributed on the surface of the dielectric layer and all have the same height; the electrode layer is a patterned electrode layer, and the positions of the electrode layer corresponding to the bumps are hollow; and the air gap layer has a thickness of 100 to 200 μm. The preparation method of the discharge reactor comprises the following steps: Step S1, preparing a single crystal alumina sheet; Step S2, using an etching process to process the surface of the single-crystalline aluminum oxide sheet to form a dielectric layer having bumps on the surface; wherein the bumps are evenly distributed on the surface of the single-crystalline aluminum oxide sheet by a laser layered etching process, with a height tolerance of ≤5 μm; Step S3, polishing the ends of the bumps to make the surfaces of the bump ends smooth and with a roughness Ra less than 20 nm; Step S4, preparing an electrode layer, or forming an electrode layer on a single crystal alumina sheet; Step S5 , aligning and laminating the dielectric layer and the electrode layer obtained through the above steps to obtain a discharge reactor.

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