Use method of light absorption release composition and preparation method of semiconductor device

Abstract

The invention relates to a use method of a light absorption release composition and a preparation method of a semiconductor device. A use method of the light absorption release composition comprises the following steps: (a) processing a layer to be processed of a laminated body comprising a support carrier, a release layer and the layer to be processed so that the layer to be processed forms a processed layer; (b) after the step (a), irradiating the release layer with pulse laser light through the support carrier; and (c) separating the support carrier from the processed layer simultaneously with or after the step (b). The release layer is formed by a light absorption release composition. The light absorption release composition comprises a polymer (A), a light absorption agent (B) and a solvent (C). The polymer (A) is formed by reacting a mixture comprising a tetracarboxylic dianhydride component (a) and a diamine component (b). The diamine component (b) comprises a diamine compound (b1) of formula (I). # imgabs0 #

Description

Technical Field

[0001] The present invention relates to a method for using a release composition, and particularly to a method for using a light-absorbing release composition. Background Art

[0002] In recent years, due to the thinning of semiconductor devices, the size of components (such as wafers) in the semiconductor devices has become thinner and thinner, making the components more fragile. Without support, during subsequent processing, the components are likely to be damaged due to fragility. Therefore, it is often necessary to bond the components to a support substrate through a temporary fixing member to perform subsequent processing such as wiring and etching on the components. After the processing, the temporary fixing member is removed to separate the components from the support substrate. As can be seen from the above, the bonding and peeling techniques of the temporary fixing member have become one of the important development techniques.

[0003] Currently, after performing the processing, usually radiation such as ultraviolet rays and infrared rays is used to irradiate the temporary fixing member to weaken the adhesion of the temporary fixing member, so that the components can be separated from the support substrate. Based on this, the temporary fixing member needs to have peelability that is easy to peel off and does not leave residues.

[0004] However, when the peelability of the temporary fixing member after light irradiation is poor, it is likely to remain on the object to be processed after processing, which is not conducive to the subsequent processes of the object to be processed after processing. Summary of the Invention

[0005] The first object of the present invention is to provide a method for using a light-absorbing release composition.

[0006] The method for using a light-absorbing release composition of the present invention includes: step (a), performing a processing on a layer to be processed of a laminate to form a processed layer on the layer to be processed. The laminate defines a stacking direction and sequentially includes a support carrier, a temporary fixing unit including a release layer, and the layer to be processed in the stacking direction. Before or after the processing, the laminate is selectively moved; step (b), after step (a), irradiating the release layer with a pulsed laser through the support carrier; and step (c), simultaneously with step (b) or after step (b), separating the support carrier from the processed layer to obtain the processed layer;

[0007] The release layer is formed from a light-absorbing release composition, and the light-absorbing release composition includes a polymer (A), a light absorbent (B), and a solvent (C); the polymer (A) is selected from polyamic acid polymers, polyimide polymers, polyimide-based block copolymers, or any combination thereof, and is formed by polycondensation of a mixture including a tetracarboxylic dianhydride component (a) and a diamine component (b), and the diamine component (b) includes a diamine compound (b1) represented by formula (I);

[0008]

[0009] n represents an integer from 1 to 12.

[0010] For the method of using the light-absorbing release composition of the present invention, the diamine component further includes at least one aromatic diamine compound (b2) selected from the group consisting of: the aromatic diamine compound represented by formula (II) and the aromatic diamine compound represented by formula (III),

[0011]

[0012] R 1 represents a single bond, -C(CH3)2-, -(CH2) n1 -, -C(CF3)2-, -O-(CH2) n2 -O-, -O-, -S-(CH2) n3 -S-, -S-, -S-S-, -SO2-, -CO-, -CONH-, or -NHCO-, and n1, n2, and n3 independently represent 1 to 12,

[0013] R 2 represents a single bond, -C(CH3)2-, -O-, -S-, -CO-, -C(CF3)2-, or a C1 to C10 alkylene group,

[0014] Any hydrogen on any benzene ring can be substituted by -F, -CH3, -CF3, -OH, or a phenyl group,

[0015]

[0016] R 3 represents a single bond, -C(CH3)2-, -(CH2) m1 -, -C(CF3)2-, -O-(CH2) m2 -O-, -O-, -S-(CH2) m3 -S-, -S-, -S-S-, -SO2-, -CO-, -CONH-, or -NHCO-, and m1, m2, and m3 independently represent 1 to 12,

[0017] R4 represents a single bond, -C(CH3)2-, -C(CF3)2-, -O-, -S-, -CO-, or an alkylene group having 1 to 10 carbon atoms,

[0018] R 5 represents a single bond, -C(CH3)2-, -C(CF3)2-, -O-, -S-, -CO-, or an alkylene group having 1 to 10 carbon atoms,

[0019] Any hydrogen on any of the benzene rings may be substituted with -F, -CH3, -CF3, -OH, or a phenyl group.

[0020] A method for using the light-absorbing release composition of the present invention, wherein the wavelength of the pulsed laser is 400 nm or less.

[0021] A method for using the light-absorbing release composition of the present invention, wherein the polymer (A) is a polyamic acid polymer.

[0022] A method for using the light-absorbing release composition of the present invention, wherein the light absorbent (B) contains a black pigment.

[0023] A method for using the light-absorbing release composition of the present invention, based on 100 parts by weight of the amount of the polymer (A) used, the amount of the light absorbent (B) used is 5 to 200 parts by weight, and the amount of the solvent (C) used is 500 to 4000 parts by weight.

[0024] A method for using the light-absorbing release composition of the present invention, based on the total amount of the diamine component (b) being 100 mol%, the amount of the diamine compound (b1) represented by the formula (I) is 20 to 90 mol%.

[0025] A method for using the light-absorbing release composition of the present invention, when the total amount of the diamine component (b) is 100 mol%, the amount of the aromatic diamine compound (b2) is 10 to 80 mol%.

[0026] A method for using the light-absorbing release composition of the present invention, wherein the temporary fixing unit further includes an adhesive layer, so that the laminate sequentially has the support carrier, the release layer, the adhesive layer, and the layer to be processed.

[0027] A second object of the present invention is to provide a method for manufacturing a semiconductor device.

[0028] A method for manufacturing a semiconductor device of the present invention includes: processing the processed layer obtained by the above method for using the light-absorbing release composition to form a semiconductor device.

[0029] The beneficial effects of the present invention are as follows: In the method of using the light-absorbing release composition of the present invention, by using the polymer (A) and the absorbent (B) formed by the diamine compound (b1) of formula (I) of the diamine component (b), the release layer formed by the light-absorbing release composition of the present invention can have better peelability after irradiation with pulsed laser. Detailed Embodiments

[0030] The present invention will be described in detail below with reference to the accompanying drawings and embodiments.

[0031] The following will describe the ways for implementing the present invention, including preferred ways. Each component such as the compounds exemplified in the following description can be used alone or in combination of at least two, unless otherwise specified.

[0032] The method of using the light-absorbing release composition of the present invention includes step (a) of performing a processing on a layer to be processed of a laminate to form a processed layer, the laminate defining a stacking direction and sequentially including a support carrier, a temporary fixing unit including a release layer, and the layer to be processed in the stacking direction, and selectively performing a moving process on the laminate before or after the processing; step (b) of, after step (a), irradiating the release layer with pulsed laser through the support carrier; and step (c) of separating the support carrier from the processed layer simultaneously with step (b) or after step (b) to obtain the processed layer.

[0033] <Step (a)>

[0034] In the laminate, the layer to be processed is temporarily fixed on the support carrier via the temporary fixing unit. In one embodiment, the temporary fixing unit is sandwiched between the layer to be processed and the support carrier.

[0035] In step (a), it further includes the step of forming the laminate. The step of forming the laminate, for example, forms the temporary fixing unit on the surface of the support carrier and / or the layer to be processed, and bonds the layer to be processed and the support carrier together through the temporary fixing unit, thereby temporarily fixing the layer to be processed on the support carrier. Alternatively, the layer to be processed can be temporarily fixed on the support carrier by forming the temporary fixing unit on the surface of the support carrier and forming the layer to be processed such as a resin coating or a wiring layer on the temporary fixing unit.

[0036] The temporary fixing unit may further include an adhesive layer, that is, the laminate sequentially includes the support carrier, the release layer, the adhesive layer, and the layer to be processed. Due to the presence of the adhesive layer, the adverse effects on the layer to be processed caused by the heat generation of the release layer receiving light irradiation can be suppressed.

[0037] To form the release layer and the adhesive layer, for example, a release composition for forming the release layer and an adhesive composition for forming the adhesive layer can be used respectively. Coating methods for these compositions include, for example, spin coating, inkjet printing, slot die coating, and vapor deposition. After coating each composition to form a coating film, for example, the solvent is evaporated by heating to form the release layer or the adhesive layer. The conditions of this heat treatment can be adjusted according to the boiling point of the solvent (C), and the temperature of this heat treatment is, for example, 100°C to 350°C and the time is, for example, 1 minute to 60 minutes. When the temporary fixing unit does not include the adhesive layer, the method of forming the laminate includes, for example, forming a release layer on the surface of the support carrier and forming the layer to be processed on the release layer, or bonding them together.

[0038] In addition, when the temporary fixing unit includes the adhesive layer, the method of forming the laminate is, for example, Method 1, Method 2, or Method 3. In Method 1, the adhesive layer is formed on the surface of the layer to be processed, the release layer is formed on the surface of the support carrier, and then they are bonded together. In Method 2, the adhesive layer and the release layer are sequentially formed on the surface of the layer to be processed, and the release layer is bonded to the support carrier. In Method 3, the release layer and the adhesive layer are sequentially formed on the surface of the support carrier, and the adhesive layer is bonded to the layer to be processed. From the viewpoint of avoiding mixing of the adhesive layer and the release layer when forming each layer, preferably, the method of forming the laminate is Method 1.

[0039] In the above method of forming the laminate, it is preferable to apply pressure when bonding the layer to be processed and the support carrier together. This can be carried out in the stacking direction of each component of the laminate, and the conditions for pressing the layer to be processed and the support carrier via the temporary fixing unit are, for example, preferably 15°C to 400°C, more preferably 150°C to 400°C, for 1 minute to 20 minutes, and an applied pressure of 0.01 MPa to 100 MPa. After bonding, preferably, a heat treatment is carried out at 150°C to 300°C for 10 minutes to 3 hours.

[0040] [Layer to be processed]

[0041] The layer to be processed is, for example, a semiconductor wafer, a semiconductor chip, a glass substrate, a resin substrate, a metal substrate, a metal foil, a polishing pad, a resin coating film, a wiring layer, or a semiconductor micro-device with a size of 1 millimeter to several millimeters. For the semiconductor wafer and the semiconductor chip, at least one structure can be formed or installed, and the structure is, for example, a copper pillar, a wiring, a via hole, a via hole channel, an insulating film, and various components. For the glass substrate, the resin substrate, and the metal substrate, various components can also be formed or installed. The resin coating film includes, for example, a layer with an organic component as the main component. Specifically, the resin coating film is, for example, a photosensitive resin layer formed from a photosensitive material, an insulating resin layer formed from an insulating material, or a photosensitive insulating resin layer formed from a photosensitive insulating resin material. The semiconductor micro-device is, for example, a field-effect transistor, an optical sensor, a logic chip, a known good die (KGD), or a semiconductor micro-device with a re-distribution layer (RDL). The semiconductor micro-device can also be obtained by depositing multi-layer structures, wiring, etching, etc. on a wafer and then performing a cutting process.

[0042] The following is an explanation of the layer to be processed with a wiring layer. In this process, the temporary fixing unit is formed on the support carrier, and then the layer to be processed with at least a wiring layer is formed on the temporary fixing unit. The layer to be processed with a wiring layer is, for example, a layer independent of the semiconductor wafer or the semiconductor chip. Then, a semiconductor wafer or a semiconductor chip is disposed on the wiring layer. The semiconductor wafer or the semiconductor chip includes a wafer substrate and a plurality of semiconductor elements formed on the wafer substrate. The wiring layer is electrically connected to the semiconductor wafer or the semiconductor chip and serves as the re-wiring layer of the semiconductor wafer or the semiconductor chip. The present invention can also be applied to the Redistribution Layer-First (RDL-First) structure in the Fan-Out Wafer Level Package (FO-WLP) technology.

[0043] The wiring layer includes an insulating portion, a wiring portion, and a connection conductor portion connected to the electrodes of the semiconductor wafer or the semiconductor chip. The semiconductor wafer or the semiconductor chip is placed on the wiring layer and electrically connected to the connection conductor portion of the wiring layer and the electrodes of the semiconductor wafer or the semiconductor chip through a connecting member such as soldering, anisotropic conductive paste, or anisotropic conductive film. When there is a gap between the semiconductor wafer or the semiconductor chip and the wiring layer, a filler material can be used for filling.

[0044] The internal structure of the wiring layer is not particularly limited. The materials of the wiring portion and the connection conductor portion are, for example, metals such as copper, gold, silver, platinum, lead, tin, nickel, cobalt, indium, rhenium, chromium, tungsten, ruthenium, etc., and alloys composed of at least two of the above metals. The material of the insulating portion is, for example, a synthetic resin. The synthetic resin is, for example, polyimide resin, acrylic resin, polyether nitrile resin, polyether sulfone resin, epoxy resin, polyethylene terephthalate resin, polyethylene naphthalate resin, or polyvinyl chloride resin, etc. The thickness of the wiring layer is usually 1 μm to 1,000 μm.

[0045] Subsequently, for example, in step (a), the semiconductor wafer or chip is resin-sealed, and in step (c) described later, the temporary fixing unit and the wiring layer are separated, thereby obtaining a semiconductor device including the semiconductor wafer or chip and the wiring layer (i.e., the rewiring layer).

[0046] In addition, the arrangement of the layer to be processed on the temporary fixing unit, or the arrangement of the semiconductor wafer or the semiconductor chip on the wiring layer in the process of forming the wiring layer, can also be performed after alignment based on the position information of each component obtained from the measurement light.

[0047] To avoid deterioration of the layer to be processed, preferably, the measurement light is, for example, light with a wavelength of 600 nm to 900 nm. Preferably, the measurement light is light with a wavelength of 633 nm, 670 nm, or 830 nm. Preferably, the light source for providing the measurement light is, for example, a visible light semiconductor laser or a light-emitting diode.

[0048] Alignment is performed as follows. For the release layer, the release layer includes a film layer containing a light absorber that absorbs the measurement light. Therefore, when the measurement light irradiates the release layer, the situation where the release layer absorbs the measurement light can be detected, and the reduction in the intensity of the measurement light can be detected, and the position information of the release layer can be obtained therefrom. The installation position of the light sensor for irradiating and detecting the measurement light is not particularly limited. According to the obtained position information, alignment of the temporary fixing unit and the layer to be processed is performed, and alignment of the wiring layer with the semiconductor wafer or the semiconductor chip is performed.

[0049] Examples of the light source of the light-emitting unit include semiconductor lasers and light-emitting diodes, and examples of the light-receiving unit include light sensors such as photodiodes and phototransistors. Image sensors are, for example, CCD image sensors and CMOS image sensors. Examples of the device for moving each component include robotic arms.

[0050] [Support carrier]

[0051] Since in step (b), the pulsed laser irradiates the release layer through the support carrier to deteriorate the release layer, preferably, the support carrier is a support substrate that can transmit pulsed laser with a wavelength below 400 nm. Preferably, the support carrier has a transmission rate of more than 50% for pulsed laser with a wavelength of 355 nm, more preferably, a transmission rate of 70% to 100%, and even more preferably, a transmission rate of 80% to 100%. The support carrier is, for example, a glass substrate, a quartz substrate, or a transparent resin substrate, etc. The thickness of the support carrier is not particularly limited, for example, 0.1 mm to 2 mm.

[0052] [Release layer]

[0053] The release layer is a film layer that absorbs pulsed laser with a wavelength below 400 nm and deteriorates. When the pulsed laser irradiates the release layer, the release layer absorbs the pulsed laser and deteriorates by decomposing substances such as the polymer (A). Due to this deterioration effect, the strength and adhesion of the release layer will decrease after light irradiation. When an external force is applied to the laminate, cohesive failure will occur inside the release layer, or interfacial failure will occur between the release layer and the layer in contact with the release layer. Therefore, by applying an external force to the laminate after pulsed laser irradiation treatment, the support carrier and the processed layer can be easily separated.

[0054] In the present invention, the deterioration of the release layer refers to non-thermal deterioration similar to photochemical ablation through direct bond breakage, that is, deterioration caused by absorption of light energy.

[0055] Examples of the processed layer are, for example, semiconductor wafers and semiconductor chips. They are usually light-sensitive and may deteriorate when exposed to light irradiation. Preferably, the release layer can block light so that the pulsed laser does not reach the processed layer. When the wavelength of the pulsed laser irradiated in step (b) is, for example, 355 nm, the light transmittance of the release layer is preferably 30% or less, more preferably 0% to 10%, and even more preferably 0% to 5%.

[0056] The light transmittance of the release layer can be measured by the following method. Form a laminate composed of a transparent substrate and the release layer. Using a spectro-brightness meter, perform baseline correction on the transparent substrate as needed, measure the light transmittance (%) of the laminate, and obtain the light transmittance (%) of the release layer.

[0057] The thickness of the release layer is, for example, 2 micrometers or less, preferably 0.1 to 2 micrometers, and more preferably 0.2 to 1.5 micrometers. When the thickness of the release layer is within the above range, it can be more effectively deteriorated by the pulsed laser and protect the processed layer from the pulsed laser. In addition, the release layer should have sufficient adhesion to be temporarily fixed on the support carrier, and the support carrier and the release layer will not separate during the process of step (a).

[0058] The release layer is formed of a light-absorbing release composition, and the light-absorbing release composition contains a polymer (A), a light absorbent (B), and a solvent (C).

[0059] <Polymer (A)>

[0060] The polymer (A) is selected from polyamic acid polymers, polyimide polymers, polyimide-based block copolymers, or any combination thereof. In some embodiments of the present invention, the polyimide-based block copolymer is selected from polyamic acid block copolymers, polyimide block copolymers, polyamic acid-polyimide block copolymers, or any combination thereof. To make the release layer formed of the light-absorbing release composition have better peelability after irradiation with pulsed laser, preferably, the polymer (A) is a polyamic acid polymer.

[0061] In some embodiments of the present invention, the polymer (A) is formed by reacting a mixture, and the mixture includes a tetracarboxylic dianhydride component (a) and a diamine component (b).

[0062] The tetracarboxylic dianhydride component (a) contains at least one tetracarboxylic dianhydride compound, and the tetracarboxylic dianhydride compound is selected from aliphatic tetracarboxylic dianhydride compounds, alicyclic tetracarboxylic dianhydride compounds, or aromatic tetracarboxylic dianhydride compounds.

[0063] The aliphatic tetracarboxylic dianhydride compound is, for example but not limited to, ethane tetracarboxylic dianhydride or butane tetracarboxylic dianhydride, etc.

[0064] The alicyclic tetracarboxylic dianhydride compound is, for example but not limited to, 1,3-dimethyl-1,2,3,4-cyclobutanetetracarboxylic dianhydride, 1,2-dimethyl-1,2,3,4-cyclobutanetetracarboxylic dianhydride, 1,3-dichloro-1,2,3,4-cyclobutanetetracarboxylic dianhydride, 1,2,3,4-cyclobutanetetracarboxylic dianhydride, 1,2,3,4-tetramethyl-1,2,3,4-cyclobutanetetracarboxylic dianhydride, 1,2,3,4-cyclopentanetetracarboxylic dianhydride, 1,2,4,5-cyclohexanetetracarboxylic dianhydride, 3,3',4,4'-dicyclohexyltetracarboxylic dianhydride, 2,3,5-tricarboxycyclopentylacetic dianhydride, cis-3,7-dibutylcycloheptyl-1,5-diene-1,2,5,6-tetracarboxylic dianhydride, or bicyclo[2.2.2]-oct-7-ene-2,3,5,6-tetracarboxylic dianhydride, etc.

[0065] Examples of the aromatic tetracarboxylic dianhydride compound include, but are not limited to, 3,4-dicarboxy-1,2,3,4-tetrahydronaphthalene-1-succinic dianhydride, pyromellitic dianhydride, 2,2',3,3'-benzophenone tetracarboxylic dianhydride, 3,3',4,4'-benzophenone tetracarboxylic dianhydride, 3,3',4,4'-biphenylsulfone tetracarboxylic dianhydride, 1,4,5,8-naphthalenetetracarboxylic dianhydride, 2,3,6,7-naphthalenetetracarboxylic dianhydride, 3,3'-4,4'-diphenylethane tetracarboxylic dianhydride, 3,3',4,4'-dimethyl diphenylsilane tetracarboxylic dianhydride, 3,3',4,4'-tetraphenylsilane tetracarboxylic dianhydride, 1,2,3,4-furantetracarboxylic dianhydride, 2,3,3',4'-diphenylether tetracarboxylic dianhydride, 3,3',4,4'-diphenylether tetracarboxylic dianhydride, 4,4'-bis(3,4-dicarboxyphenoxy) diphenyl sulfide dianhydride, 2,3,3',4'-diphenylsulfide tetracarboxylic dianhydride, 3,3',4,4'-diphenylsulfide tetracarboxylic dianhydride, 4,4'-bis(3,4-dicarboxyphenoxy) diphenyl sulfone dianhydride, 4,4'-bis(3,4-dicarboxyphenoxy) diphenyl propane dianhydride, 3,3',4,4'-perfluoroisopropylidene diphthalic dianhydride, 2,2',3,3'-diphenyltetracarboxylic dianhydride, 2,3,3',4'-diphenyltetracarboxylic dianhydride, 3,3',4,4'-diphenyltetracarboxylic dianhydride, bis(phthalic acid) phenylphosphine oxide dianhydride, p-phenylene-bis(trisphenylphthalic acid) dianhydride, m-phenylene-bis(trisphenylphthalic acid) dianhydride, bis(trisphenylphthalic acid)-4,4'-diphenylether dianhydride, bis(trisphenylphthalic acid)-4,4'-diphenylmethane dianhydride, ethylene glycol-bis(trimellitic anhydride), propylene glycol-bis(trimellitic anhydride), 1,4-butanediol-bis(trimellitic anhydride), 1,6-hexanediol-bis(trimellitic anhydride), 1,8-octanediol-bis(trimellitic anhydride), 2,2-bis(4-hydroxyphenyl) propane-bis(trimellitic anhydride), 2,3,4,5-tetrahydrofurantetracarboxylic dianhydride, 1,3,3a,4,5,9b-hexahydro-5-(tetrahydro-2,5-dioxo-3-furanyl)-naphtho[1,2-c]-furan-1,3-dione, 1,3,3a,4,5,9b-hexahydro-5-methyl-5-(tetrahydro-2,5-dioxo-3-furanyl)-naphtho[1,2-c]-furan-1,3-dione, 1,3,3a,4,5,9b-hexahydro-5-ethyl-5-(tetrahydro-2,5-dioxo-3-furanyl)-naphtho[1,2-c]-furan-1,3-dione, 1,3,3a,4,5,9b-hexahydro-7-methyl-5-(tetrahydro-2,5-dioxo-3-furanyl)-naphtho[1,2-c]-furan-1,3-dione, 1,3,3a,4,5,9b-hexahydro-7-ethyl-5-(tetrahydro-2,5-dioxo-3-furanyl)-naphtho[1,2-c]-furan-1,3-dione, 1,3,3a,4,5,9b-Hexahydro-8-methyl-5-(tetrahydro-2,5-dioxo-3-furanyl)-naphtho[1,2-c]furan-1,3-dione, 1,3,3a,4,5,9b-hexahydro-8-ethyl-5-(tetrahydro-2,5-dioxo-3-furanyl)-naphtho[1,2-c]furan-1,3-dione, 1,3,3a,4,5,9b-hexahydro-5,8-dimethyl-5-(tetrahydro-2,5-dioxo-3-furanyl)-naphtho[1,2-c]furan-1,3-dione, or 5-(2,5-dioxotetrahydrofuranyl)-3-methyl-3-cyclohexene-1,2-dicarboxylic anhydride, etc.,

[0066] The diamine component (b) includes a diamine compound (b1) represented by formula (I),

[0067]

[0068] n represents an integer from 1 to 12.

[0069] When the polymer (A) of the photoabsorbing release composition does not contain the diamine compound (b1) represented by formula (I), the peelability of the release layer formed by the photoabsorbing release composition after irradiation with pulsed laser is poor. Further, the etch resistance of the release layer during the wet etching process is also poor.

[0070] In some embodiments of the present invention, the diamine compound (b1) represented by formula (I) is, for example, a diamine compound represented by formula (I-1), a diamine compound represented by formula (I-2), or a diamine compound represented by formula (I-3), etc.,

[0071]

[0072]

[0073]

[0074] In formula (I-1), n represents an integer from 1 to 12, in formula (I-2), n represents an integer from 1 to 12, and in formula (I-3), n represents an integer from 1 to 12.

[0075] The diamine compound represented by the formula (I-1) can be used alone or in combination of multiple kinds. Examples of the diamine compound represented by the formula (I-1) include bis(4-aminophenoxy)methane, 1,2-bis(4-aminophenoxy)ethane, 1,3-bis(4-aminophenoxy)propane, 1,4-bis(4-aminophenoxy)butane, 1,5-bis(4-aminophenoxy)pentane, 1,6-bis(4-aminophenoxy)hexane, 1,7-bis(4-aminophenoxy)heptane, 1,8-bis(4-aminophenoxy)octane, 1,9-bis(4-aminophenoxy)nonane, or 1,10-bis(4-aminophenoxy)decane, etc.

[0076] The diamine compound represented by the formula (I-2) can be used alone or in combination of multiple kinds. Examples of the diamine compound represented by the formula (I-2) include bis(2-aminophenoxy)methane, 1,2-bis(2-aminophenoxy)ethane, 1,3-bis(2-aminophenoxy)propane, 1,4-bis(2-aminophenoxy)butane, 1,5-bis(2-aminophenoxy)pentane, 1,6-bis(2-aminophenoxy)hexane, 1,7-bis(2-aminophenoxy)heptane, 1,8-bis(2-aminophenoxy)octane, 1,9-bis(2-aminophenoxy)nonane, or 1,10-bis(2-aminophenoxy)decane, etc.

[0077] The diamine compound represented by the formula (I-3) can be used alone or in combination of multiple kinds. Examples of the diamine compound represented by the formula (I-3) include bis(3-aminophenoxy)methane, 1,2-bis(3-aminophenoxy)ethane, 1,3-bis(3-aminophenoxy)propane, 1,4-bis(3-aminophenoxy)butane, 1,5-bis(3-aminophenoxy)pentane, 1,6-bis(3-aminophenoxy)hexane, 1,7-bis(3-aminophenoxy)heptane, 1,8-bis(3-aminophenoxy)octane, 1,9-bis(3-aminophenoxy)nonane, or 1,10-bis(3-aminophenoxy)decane, etc.

[0078] In some embodiments of the present invention, the diamine compound (b1) represented by the formula (I) is selected from 1,3-bis(4-aminophenoxy)propane, 1,4-bis(4-aminophenoxy)butane, 1,5-bis(4-aminophenoxy)pentane, 1,6-bis(4-aminophenoxy)hexane, 1,7-bis(4-aminophenoxy)heptane, 1,8-bis(4-aminophenoxy)octane, 1,3-bis(2-aminophenoxy)propane, 1,4-bis(2-aminophenoxy)butane, 1,5-bis(2-aminophenoxy)pentane, 1,6-bis(2-aminophenoxy)hexane, 1,7-bis(2-aminophenoxy)heptane, 1,8-bis(2-aminophenoxy)octane, 1,3-bis(3-aminophenoxy)propane, 1,4-bis(3-aminophenoxy)butane, 1,5-bis(3-aminophenoxy)pentane, 1,6-bis(3-aminophenoxy)hexane, 1,7-bis(3-aminophenoxy)heptane, 1,8-bis(3-aminophenoxy)octane, or any combination thereof.

[0079] In some embodiments of the present invention, based on the total usage amount of the diamine component (b) being 100 mol%, the usage amount of the diamine compound (b1) represented by the formula (I) is 20 mol% to 90 mol%, preferably 25 mol% to 88 mol%, more preferably 30 mol% to 85 mol%.

[0080] In order for the release layer formed from the light-absorbing release composition to have peelability after irradiation with pulsed laser and further have better etch resistance when undergoing a processing treatment including a wet etching process, in some embodiments of the present invention, the diamine component (b) further includes at least one aromatic diamine compound (b2) selected from the group consisting of: the aromatic diamine compound represented by the formula (II) and the aromatic diamine compound represented by the formula (III).

[0081]

[0082]

[0083] In the formula (II), R 1 represents a single bond, -C(CH3)2-, -(CH2) n1 -, -C(CF3)2-, -O-(CH2) n2 -O-, -O-, -S-(CH2) n3 -S-, -S-, -S-S-, -SO2-, -CO-, -CONH-, or -NHCO-, n1, n2 and n3 independently represent 1 to 12. R 2represents a single bond, -C(CH3)2-, -C(CF3)2-, -O-, -S-, -CO-, or an alkylene group having 1 to 10 carbon atoms. Any hydrogen on any benzene ring may be substituted with -F, -CH3, -CF3, -OH, or phenyl. The aromatic diamine compound represented by the formula (II) is, for example

[0084] etc.

[0085] In formula (III), R 3 represents a single bond, -C(CH3)2-, -(CH2) m1 , -C(CF3)2-, -O-(CH2) m2 -O-, -O-, -S-(CH2) m3 -S-, -S-, -S-S-, -SO2-, -CO-, -CONH-, or -NHCO-, m1, m2, and m3 independently represent 1 to 12. R 4 represents a single bond, -C(CH3)2-, -C(CF3)2-, -O-, -S-, -CO-, or an alkylene group having 1 to 10 carbon atoms. R 5 represents a single bond, -C(CH3)2-, -C(CF3)2-, -O-, -S-, -CO-, or an alkylene group having 1 to 10 carbon atoms. Any hydrogen on any benzene ring may be substituted with -F, -CH3, -CF3, -OH, or phenyl. The aromatic diamine compound represented by the formula (III) is, for example

[0086] etc. In formula (III-9), m1 represents 1 to 12, and m4 and m5 independently represent 1 to 2. In formula (III-10), m1 represents 1 to 12.

[0087] In some embodiments of the present invention, based on the total amount of the diamine component (b) being 100 mol%, the amount of the aromatic diamine compound (b2) is 10 mol% to 80 mol%, preferably 12 mol% to 75 mol%, more preferably 15 mol% to 70 mol%.

[0088] In some embodiments of the present invention, the diamine component (b) further includes at least one other diamine compound (b3), and the other diamine compound such as 1,2-diaminoethane, 1,3-diaminopropane, 1,4-diaminobutane, 1,5-diaminopentane, 1,6-diaminohexane, 1,7-diaminoheptane, 1,8-diaminooctane, 1,9-diaminononane, 1,10-diaminodecane, 4,4'-diaminoheptane, 1,3-diamino-2,2-dimethylpropane, 1,6-diamino-2,5-dimethylhexane, 1,7-diamino-2,5-dimethylheptane, 1,7-diamino-4,4-dimethylheptane, 1,7-diamino-3-methylheptane, 1,9-diamino-5-methylnonane, 2,11-diaminododecane, 1,12-diaminooctadecane, 1,2-bis(3-aminopropoxy)ethane, 4,4'-diamino-3,3'-dimethyldicyclohexylamine, 1,3-diaminocyclohexane, 1,4-diaminocyclohexane, isophoronediamine, tetrahydrodicyclopentadiene diamine, tricyclo(6.2.1.02,7)-undecenedimethyldiamine, 4,4'-methylenebis(cyclohexylamine), 4,4'-diaminodiphenylmethane, 4,4'-diaminodiphenylethane, 4,4'-diaminodiphenylsulfone, 4,4'-diaminobenzanilide, 4,4'-diaminodiphenylether, 3,4'-diaminodiphenylether, 1,5-diaminonaphthalene, 5-amino-1-(4'-aminophenyl)-1,3,3-trimethylindane, 6-amino-1-(4'-aminophenyl)-1,3,3-trimethylindane, hexahydro-4,7-methanoindanylidenedimethanediamine, 3,3'-diaminobenzophenone, 3,4'-diaminobenzophenone, 4,4'-diaminobenzophenone, 2,2-bis(4-aminophenyl)hexafluoropropane, 1,5-bis(4-aminophenoxymethylene)adamantane, 9,9-bis(4-aminophenyl)-10H-anthracene, 9,10-bis(4-aminophenyl)anthracene, 2,7-diaminophenanthrene, 9,9-bis(4-aminophenyl)phenanthrene, 4,4'-methylene-bis(2-chloroaniline), 5-[4-(4-n-pentylcyclohexyl)cyclohexyl]phenylmethylene-1,3-diaminobenzene, 1,1-bis[4-(4-aminophenoxy)phenyl]-4-(4-ethylphenyl)cyclohexane, 3,5-diaminobenzoic acid, 2,5-diaminobenzoic acid, p-phenylenediamine, m-phenylenediamine, o-phenylenediamine, 2,5-diaminotoluene, 4,4'-diaminobiphenyl, 2,2'-dimethyl-4,4'-diaminobiphenyl, 3,3'-dimethyl-4,4'-diaminobiphenyl, 3,3'-dimethoxy-4,4'-diaminobiphenyl, 2,2'-dichloro-4,4'-diaminobiphenyl, 3,3'-dichloro-4,4'-diaminobiphenyl, 2,2',5,5'-tetrachloro-4,4'-diaminobiphenyl, 2,2'-dichloro-4,4'-diamino-5,5'-dimethoxybiphenyl or 4,4'-diamino-2,2'-bis(trifluoromethyl)biphenyl, etc. Preferably, the other diamine compound is selected from p-phenylenediamine, 2,5-diaminotoluene, 4,4'-diaminobiphenyl or 3,3'-dimethoxy-4,4'-diaminobiphenyl.

[0089] In some embodiments of the present invention, the mixture further comprises a solvent (c) for dissolving each component in the mixture and the polymer (A). The solvent (c) is, for example but not limited to, an aprotic polar solvent or a phenolic solvent, etc. The aprotic polar solvent is, for example but not limited to, N-methyl-2-pyrrolidone, N,N-dimethylacetamide, N,N-dimethylformamide, dimethyl sulfoxide, γ-butyrolactone, tetramethylurea, or hexamethylphosphoric triamide, etc. The phenolic solvent is, for example but not limited to, m-cresol, xylenol, phenol, or halogenated phenols, etc. In some embodiments of the present invention, based on 100 parts by weight of the amount of the mixture used, the amount of the solvent (c) used is 200 parts by weight to 2000 parts by weight. In some embodiments of the present invention, based on 100 parts by weight of the amount of the mixture used, the amount of the solvent (c) used is 300 parts by weight to 1800 parts by weight.

[0090] When the polymer (A) is a polyamic acid polymer, the preparation method of the polymer (A) of the present invention can be carried out by the conventional methods, such as Method 1 or Method 2. Method 1 is to carry out a polycondensation reaction on the mixture at 0°C to 100°C for 1 hour to 24 hours to obtain a reaction mixture, and then, the reaction mixture is introduced into an evaporator and subjected to a reduced pressure distillation treatment. Method 2 is to carry out a polycondensation reaction on the mixture at 0°C to 100°C for 1 hour to 24 hours to obtain a reaction mixture, and then, the reaction mixture is contacted with a large amount of poor solvent to obtain a precipitate, and then, the precipitate is subjected to a reduced pressure drying treatment.

[0091] In some embodiments of the present invention, the mixture further comprises a poor solvent that does not cause precipitation of the polyamic acid polymer. The poor solvent can be used alone or in combination of multiple types. Examples of the poor solvent include, but are not limited to, alcohol solvents, ketone solvents, ester solvents, ether solvents, halogenated hydrocarbon solvents, or hydrocarbon solvents, etc. Examples of the alcohol solvent include, but are not limited to, methanol, ethanol, isopropanol, cyclohexanol, ethylene glycol, propylene glycol, 1,4-butanediol, or triethylene glycol, etc. Examples of the ketone solvent include, but are not limited to, acetone, methyl ethyl ketone, methyl isobutyl ketone, or cyclohexanone, etc. Examples of the ester solvent include, but are not limited to, methyl acetate, ethyl acetate, butyl acetate, diethyl oxalate, diethyl malonate, or ethylene glycol ethyl ether acetate, etc. Examples of the ether solvent include, but are not limited to, diethyl ether, ethylene glycol methyl ether, ethylene glycol ethyl ether, ethylene glycol n-propyl ether, ethylene glycol isopropyl ether, ethylene glycol n-butyl ether, ethylene glycol dimethyl ether, or diethylene glycol dimethyl ether, etc. Examples of the halogenated hydrocarbon solvent include, but are not limited to, dichloromethane, 1,2-dichloroethane, 1,4-dichlorobutane, trichloroethane, chlorobenzene, or o-dichlorobenzene, etc. Examples of the hydrocarbon solvent include, but are not limited to, tetrahydrofuran, hexane, heptane, octane, benzene, toluene, or xylene, etc. In some embodiments of the present invention, based on the total amount of the diamine component (b) being 100 parts by weight, the amount of the poor solvent used is from 0 parts by weight to 60 parts by weight. Preferably, based on the total amount of the diamine component being 100 parts by weight, the amount of the poor solvent used is from 0 parts by weight to 50 parts by weight.

[0092] When the polymer (A) is a polyimide polymer, the preparation method of the polymer (A) of the present invention can adopt the previous methods. For example, the polyamic acid polymer is subjected to a dehydration ring-closure reaction (i.e., imidization reaction) in the presence of a dehydrating agent and a catalyst, so that the amic acid in the polyamic acid polymer is converted into imide.

[0093] To obtain an appropriate imidization rate of the polyamic acid polymer, preferably, the operating temperature of the dehydration ring-closure reaction is from 40°C to 200°C, more preferably, from 40°C to 150°C. When the operating temperature of the dehydration ring-closure reaction is lower than 40°C, the imidization reaction is incomplete, and the imidization degree of the polyamic acid polymer is reduced. However, when the operating temperature of the dehydration ring-closure reaction is higher than 200°C, the weight-average molecular weight of the obtained polyimide polymer is low.

[0094] The dehydrating agent is, for example, an acid anhydride compound. Examples of the acid anhydride compound include acetic anhydride, propionic anhydride, trifluoroacetic anhydride, etc. Based on 1 mole of the total amount of the polyamic acid polymer, the usage amount of the dehydrating agent is 0.01 mole to 20 moles. The catalyst is, for example, a pyridine compound or a tertiary amine compound, etc. Examples of the pyridine compound include pyridine, trimethylpyridine, dimethylpyridine, etc. Examples of the tertiary amine compound include triethylamine, etc. Based on 1 mole of the total amount of the dehydrating agent, the usage amount of the catalyst is 0.5 mole to 10 moles.

[0095] In some embodiments of the present invention, the dehydration ring-closure reaction is carried out in the presence of a solvent. The solvent is, for example, the solvent (c) in the above-mentioned mixture, so it will not be elaborated here. In some embodiments of the present invention, based on 100 parts by weight of the total amount of the polyamic acid polymer, the usage amount of the solvent is 200 parts by weight to 2000 parts by weight. Preferably, based on 100 parts by weight of the total amount of the polyamic acid polymer, the usage amount of the solvent is 300 parts by weight to 1800 parts by weight.

[0096] When the polymer (A) is a polyimide-based block copolymer, the preparation method of the polymer (A) of the present invention can adopt the previous methods, such as dissolving the reaction components in a solvent and carrying out a polycondensation reaction. The reaction components include at least one of a polyamic acid polymer and a polyimide polymer.

[0097] The solvent is, for example, the solvent (c) in the above-mentioned mixture, so it will not be elaborated here. Further, the reaction components further include a tetracarboxylic dianhydride component and a diamine component. The tetracarboxylic dianhydride component and the diamine component are, for example, the tetracarboxylic dianhydride component (a) and the diamine component (b) mentioned above, so it will not be elaborated here.

[0098] In some embodiments of the present invention, preferably, based on 100 parts by weight of the total amount of the reaction components, the usage amount of the solvent is 200 parts by weight to 2000 parts by weight, more preferably, 300 parts by weight to 1800 parts by weight. In some embodiments of the present invention, preferably, the operating temperature of the polycondensation reaction is 0°C to 200°C, more preferably, 0°C to 100°C.

[0099] Preferably, the reaction components include, for example but not limited to: (1) polyamic acid polymers with two different terminal groups and different structures; (2) polyimide polymers with two different terminal groups and different structures; (3) polyamic acid polymers and polyimide polymers with different terminal groups and different structures; (4) polyamic acid polymers, tetracarboxylic dianhydride compounds and diamine compounds, where at least one of the tetracarboxylic dianhydride compound and the diamine compound has a different structure from the tetracarboxylic dianhydride compound and the diamine compound forming the polyamic acid polymer; (5) polyimide polymers, tetracarboxylic dianhydride compounds and diamine compounds, where at least one of the tetracarboxylic dianhydride compound and the diamine compound has a different structure from the tetracarboxylic dianhydride compound and the diamine compound forming the polyimide polymer; (6) polyamic acid polymers, polyimide polymers, tetracarboxylic dianhydride compounds and diamine compounds, where at least one of the tetracarboxylic dianhydride compound and the diamine compound has a different structure from the tetracarboxylic dianhydride compound and the diamine compound forming the polyamic acid polymer or the polyimide polymer; (7) two polyamic acid polymers with different structures, tetracarboxylic dianhydride compounds and diamine compounds; (8) two polyimide polymers with different structures, tetracarboxylic dianhydride compounds and diamine compounds; (9) polyamic acid polymers with two acid anhydride groups at the terminal and different structures and diamine compounds; (10) polyamic acid polymers with two amino groups at the terminal and different structures and tetracarboxylic dianhydride compounds; (11) polyimide polymers with two acid anhydride groups at the terminal and different structures and diamine compounds; (12) polyimide polymers with two amino groups at the terminal and different structures and tetracarboxylic dianhydride compounds.

[0100] Preferably, within the scope not affecting the efficacy of the present invention, the molecular weight of the polyamic acid polymer, the polyimide polymer and the polyimide-based block copolymer is adjusted to form a terminal-modified polymer. By means of this terminal-modified polymer, the coating performance of the light-absorbing release composition can be improved.

[0101] The method for preparing the terminal-modified polymer can be obtained by adding a monofunctional compound while the polyamic acid polymer is undergoing a polycondensation reaction. The monofunctional compound includes, for example but not limited to, monobasic acid anhydrides, monoisocyanate compounds, monoamine compounds, etc. The monobasic acid anhydrides include, for example, maleic anhydride, n-dodecyl succinic anhydride, phthalic anhydride, n-hexadecyl succinic anhydride, itaconic anhydride, n-tetradecyl succinic anhydride or n-decyl succinic anhydride, etc. The monoisocyanate compounds include, for example, phenyl isocyanate or naphthyl isocyanate, etc. The monoamine compounds include, for example, n-butylamine, n-pentylamine, n-hexylamine, n-heptylamine, n-octylamine, n-nonylamine, n-decylamine, n-undecylamine, n-dodecylamine, n-tridecylamine, n-tetradecylamine, n-pentadecylamine, n-hexadecylamine, n-heptadecylamine, n-octadecylamine, n-eicosylamine, cyclohexylamine or aniline, etc.

[0102] In some embodiments of the present invention, according to gel permeation chromatography and using polystyrene as a standard, the polymer (A) has a weight average molecular weight of 5,000 to 50,000. Preferably, the polymer (A) has a weight average molecular weight of 8,000 to 45,000. More preferably, the polymer (A) has a weight average molecular weight of 10,000 to 40,000.

[0103] <Light absorbent (B)>

[0104] When the release layer contains the light absorbent (B), the release layer has better etching resistance and can have better peelability after irradiation with pulsed laser. The release layer preferably includes a light absorbent (B) that absorbs pulsed laser with a wavelength of 400 nm or less. The light absorbent (B) is, for example, a light absorbent that can absorb light and cause changes such as decomposition of the components constituting the release layer.

[0105] In addition, as the light absorbent (B), a polymer having a structure that absorbs pulsed laser with a wavelength of 400 nm or less in the repeating unit can be used. The polymer is, for example, a polymer having a structure containing a conjugated π-electron system. Specifically, for example, a polymer having a quinone structure, a polymer having a structure that forms a quinone structure by heat treatment, a benzene ring, a condensed ring, or a heterocyclic ring, etc.

[0106] For example, the light absorbent (B) more preferably has the following functions (a) and (b) at the same time. The function (a) is to be able to absorb and separate the light used in the pulsed laser irradiation treatment in step (3) and cause deterioration of the release layer. The function (b) is to be able to absorb the measurement light (usually having a wavelength of 600 nm to 900 nm) used for detecting the alignment of the release layer and each component when arranging and stacking the components in the laminate.

[0107] The light absorbent (B) can be used alone or in combination of multiple types. The absorbent (B) includes, for example but not limited to, organic light absorbers, novolac resins, or black pigments. In some embodiments of the present invention, the absorbent (B) contains a black pigment. The organic light absorber includes, for example but not limited to, benzotriazole-based light absorbers, hydroxyphenyltriazine-based light absorbers, benzophenone-based light absorbers, salicylic acid-based light absorbers, radiation-sensitive radical polymerization initiators, or photo-sensitive acid generators. The novolac resin includes, for example but not limited to, Phenol Novolak or naphthol novolak. There is no particular limitation on the black pigment. Preferably, the black pigment is a black pigment having heat resistance, light resistance, and solvent resistance. The black pigment can be used alone or in combination of multiple types. The black pigment includes, for example, light-shielding materials, black organic pigments, or mixed organic pigments that are a mixture of several pigments and are close to blackening. The light-shielding material includes, for example, carbon black, chromium oxide, iron oxide, titanium black, or graphite. The carbon black includes, for example, C.I. pigment black 7 or commercially available products manufactured by Mitsubishi Chemical (trade names MA100, MA230, MA8, #970, #1000, #2350, or #2650). The black organic pigment includes, for example, perylene black, cyanine black, or aniline black. The pigment includes, for example, red pigments, blue pigments, green pigments, purple pigments, yellow pigments, cyanine pigments, or magenta pigments. The black pigment includes, for example, C.I. pigment black 7, C.I. pigment black 31, C.I. pigment black 32, or C.I. pigment black 35. Preferably, the black pigment is carbon black, and the carbon black is, for example, the commercially available product MA100 or MA230 manufactured by Mitsubishi Chemical.

[0108] In some embodiments of the present invention, based on 100 parts by weight of the total amount of the polymer (A), the amount of the light absorbent (B) is 5 to 200 parts by weight. Preferably, based on 100 parts by weight of the total amount of the polymer (A), the amount of the light absorbent (B) is 10 to 180 parts by weight. More preferably, based on 100 parts by weight of the total amount of the polymer (A), the amount of the light absorbent (B) is 20 to 150 parts by weight.

[0109] <Solvent (C)>

[0110] The solvent (C) is, for example, a solvent having an affinity for polyamic acid and its derivatives or a solvent for improving coatability.

[0111] The solvent having an affinity for polyamic acid and its derivatives is, for example, an aprotic polar organic solvent. The aprotic polar organic solvent is, for example, 3-methoxy-N,N-dimethylpropanamide, N-methyl-2-pyrrolidone, dimethyl imidazolidinone, N-methyl caprolactam, N-methylpropionamide, N,N-dimethylacetamide, dimethylsulfoxide, N,N-dimethylformamide, N,N-diethylformamide, diethyl acetamide, or lactone. The lactone is, for example, γ-butyrolactone.

[0112] Solvents for improving coatability include, for example, but are not limited to, diacetone alcohol, alkyl lactate, 3-methyl-3-methoxybutanol, tetraline, isophorone, ethylene glycol monoalkylether, diethylene glycol monoalkyl ether, phenylacetate, triethylene glycol monoalkyl ether, propylene glycol monoalkyl ether, dialkyl malonate, dipropylene glycol monoalkyl ether, or ester compound, etc. The ethylene glycol monoalkylether is, for example, ethylene glycol monobutyl ether. The diethylene glycol monoalkyl ether is, for example, diethylene glycol monoethyl ether. The propylene glycol monoalkyl ether is, for example, propylene glycol monomethyl ether or propylene glycol monobutyl ether. The dialkyl malonate is, for example, diethyl malonate. The dipropylene glycol monoalkyl ether is, for example, dipropylene glycol monomethyl ether. The ester compound is, for example, acetate.

[0113] Preferably, the solvent (C) is selected from 3-methoxy-N,N-dimethylpropionamide, diacetone alcohol, N-methyl-2-pyrrolidone, dimethylimidazolidinone, γ-butyrolactone, ethylene glycol monobutyl ether, diethylene glycol monoethyl ether, propylene glycol monobutyl ether, propylene glycol monomethyl ether or dipropylene glycol monomethyl ether.

[0114] In some embodiments of the present invention, based on 100 parts by weight of the total amount of the polymer (A), the amount of the solvent (C) used is 500 parts by weight to 4000 parts by weight. Preferably, based on 100 parts by weight of the total amount of the polymer (A), the amount of the solvent (C) used is 600 parts by weight to 3500 parts by weight. More preferably, based on 100 parts by weight of the total amount of the polymer (A), the amount of the solvent (C) used is 800 parts by weight to 3000 parts by weight.

[0115] The light-absorbing release composition may further contain at least one additive according to application requirements, and the additive is, for example, an adhesive, an antioxidant, a polymerization inhibitor, an adhesion aid, a surfactant, polystyrene cross-linked particles, a cross-linking agent, or metal oxide particles, etc.

[0116] [Preparation method of the light-absorbing release composition]

[0117] In some embodiments of the present invention, the preparation method of the light-absorbing release composition of the present invention comprises mixing the polymer (A) and the light-absorbing agent (B) with the solvent (C) under the condition of 0 °C to 200 °C, and continuously stirring until dissolved. Preferably, the polymer (A) and the light-absorbing agent (B) are mixed with the solvent (C) under the condition of 20 °C to 60 °C.

[0118] [Adhesive layer]

[0119] Such a temporary fixing unit having two or more layers may have some good balance functions, such as protecting the surface circuit of the processed layer or the layer to be processed, the adhesiveness and separability between the support carrier and the processed layer or the layer to be processed, blocking the light used during the light treatment, or having heat resistance during the processing treatment or the light treatment, etc. In addition, due to the presence of the adhesive layer, it can be used to suppress the adverse effects on the processed layer or the layer to be processed caused by the heat generated by the light irradiation of the release layer.

[0120] The adhesive layer can be formed using an adhesive known for forming an adhesive layer. The adhesive layer is used to temporarily fix the layer to be processed on the support carrier and cover and protect the surface of the layer to be processed.

[0121] The adhesive can be used alone or in combination of multiple types, and the adhesive is, for example, a thermoplastic resin-based adhesive, an elastic system adhesive, or a thermosetting resin-based adhesive, etc. The adhesive can be in a solvent form, an emulsion form, or a hot melt form.

[0122] The thermoplastic resins in the thermoplastic resin-based adhesive include, for example, olefin resins, cycloolefin resins, terpene resins, rosin resins, petroleum resins, polycaprolactone, (meth)acrylic resins, polyvinyl chloride, ethylene-vinyl acetate copolymers, phenolic resins, thermoplastic polyimide resins, or thermoplastic polybenzoxazole resins, etc. From the perspective of heat resistance, preferably, a cycloolefin resin is used. From the perspective of chemical resistance, preferably, at least one of cycloolefin resins, terpene resins, rosin resins, and petroleum resins is used.

[0123] The elastomers in the elastomer-based adhesive can be, for example, (meth)acrylic rubber, nitrile rubber, polyurethane rubber, or styrene-butadiene rubber, etc. The thermosetting resins in the thermosetting resin-based adhesive include, for example, epoxy resins, phenolic resins, urea resins, melamine resins, unsaturated polyester resins, phthalate resins, polyurethane resins, silicone rubbers, resins containing (meth)acrylate groups, thermosetting polyimide resins, or thermosetting polybenzoxazole resins, etc.

[0124] The adhesive may further include at least one of an antioxidant, a polymerization inhibitor, an adhesion aid, a surfactant, polystyrene cross-linked particles, a cross-linking agent, and metal oxide particles according to application requirements.

[0125] Preferably, the thickness of the adhesive layer is 10 μm to 200 μm, more preferably, 15 μm to 100 μm, and even more preferably, 20 μm to 80 μm. When the thickness of the adhesive layer is within the above range, the adhesive layer can provide sufficient adhesion to temporarily fix the layer to be processed, and during the process of step (a), the adhesive layer will not separate from the layer to be processed.

[0126] In some embodiments of the present invention, in addition to the release layer and the adhesive layer, the temporary fixing unit may further include any other layer. For example, an intermediate layer can be provided between the release layer and the adhesive layer, and other layers can be provided between the release layer and the support carrier or between the adhesive layer and the layer to be processed. Particularly preferably, the temporary fixing unit is composed of the release layer and the adhesive layer.

[0127] In step (a), it further includes moving the laminate before or after the processing. Moving means moving the layer to be processed or the processed layer, such as a semiconductor wafer, together with the support carrier from one device to another device.

[0128] The processing of the layer to be processed temporarily fixed on the support carrier includes a wet etching process. The wet etching process is usually carried out in the temperature range of 25°C to 300°C. The wet etching process is carried out under an etching solution. The etching solution is, for example, an acidic etching solution or an alkaline etching solution. The acidic etching solution is, for example, but not limited to, an acidic component, an acidic etching aqueous solution containing an acidic component and water, or an acidic etching aqueous solution containing an acidic component, a salt component and water. The acidic component can be used alone or in combination of multiple kinds, and the acidic component is, for example, but not limited to, hydrochloric acid, sulfuric acid, hydrofluoric acid or phosphoric acid, etc. The salt component can be used alone or in combination of multiple kinds, and the salt component is, for example, but not limited to, ferric chloride, ammonium fluoride or potassium permanganate, etc. The alkaline etching solution is, for example, but not limited to, an alkaline component, an alkaline etching aqueous solution containing an alkaline component and water, or an alkaline etching aqueous solution containing an alkaline component, a salt component and water. The alkaline component can be used alone or in combination of multiple kinds, and the alkaline component is, for example, but not limited to, sodium hydroxide, potassium hydroxide, ammonia, organic amine or organic ammonium salt, etc. The organic ammonium salt is, for example, tetramethylammonium hydroxide. The salt component is, for example, but not limited to, potassium permanganate.

[0129] The temperature of the etching solution is not particularly limited. Preferably, the temperature of the etching solution is 45°C or less. The processing of the layer to be processed temporarily fixed on the support carrier further includes a cleaning process and a drying process after the wet etching process. In some embodiments of the present invention, the cleaning process is carried out using pure water at room temperature, and the cleaning time is 10 seconds to 300 seconds. In some embodiments of the present invention, the drying process is carried out using a blower, and the blower provides 0.1 kg / cm 2 to 5 kg / cm 2 of air pressure. In the present invention, by using the polymer (A) formed by the diamine compound (b1) of the formula (I) of the diamine component (b), not only can the release layer have peelability after irradiation with pulsed laser, but also the release layer is not easily affected by the etching solution of the wet etching process during the process of undergoing the processing including the wet etching process, and can be stably disposed on the support carrier, so that the layer to be processed or the processed layer can also be stably disposed on the support carrier, thereby imparting the release layer with etching resistance.

[0130] Furthermore, the processing also includes, for example, thinning of the layer to be processed (such as cutting and back grinding), optical processing, stacking of semiconductor chips, mounting of various components, and resin sealing. The optical processing is selected from at least one processing step such as forming a photolithographic pattern, etching, sputtering film formation, electroplating treatment, and electroplating reflow soldering. The etching and the sputtering film formation are generally carried out in the temperature range of 25°C to 300°C, while the electroplating treatment and the electroplating reflow soldering are generally carried out in the temperature range of 225°C to 300°C. There is no particular limitation on the processing of the layer to be processed, as long as it is carried out within the temperature range that does not reduce the adhesion of the temporary fixing unit.

[0131] For example, in the above RDL-First, a layer to be processed having at least a wiring layer is formed on the temporary fixing unit, and then, at least one selected from a semiconductor wafer and a semiconductor chip is disposed on the wiring layer, and then, the wiring layer is electrically connected to the semiconductor wafer or chip. Subsequently, the semiconductor wafer or chip is resin-sealed as required.

[0132] <Step (b)>

[0133] After step (a), the release layer is irradiated from one side of the support carrier with a pulsed laser having a wavelength of 400 nm or less and a pulse width of 1 nanosecond or less. When the release layer is exposed to the pulsed laser, the components in the release layer absorb the pulsed laser and deteriorate, resulting in degradation of the release layer and reduction of the strength and adhesion of the release layer. Therefore, after the pulsed laser irradiation of the release layer, the support carrier can be easily separated from the processed layer without performing heat treatment on the temporary fixing unit.

[0134] The pulsed laser is a laser emitted from a pulsed laser generator. For the pulsed laser, conditions that can cause deterioration of the release layer are adopted. Laser decomposition (peeling) can be carried out through two mechanisms: photothermal peeling and photochemical peeling. The photochemical peeling mechanism can be carried out by using a pulsed laser with a shorter wavelength and a smaller pulse width. Therefore, by using a pulsed laser with a shorter wavelength and a smaller pulse width, the heat generated in the release layer due to light irradiation can be effectively suppressed, damage to the processed layer can be prevented, and the separation process can be carried out smoothly. In particular, by setting the pulse width to 1 nanosecond or less, the peeling action can be induced in a shorter time, and thus thermal damage to the surrounding area can be minimized.

[0135] The wavelength of the pulsed laser should be below 400 nm. However, when the wavelength of the pulsed laser is too short, the pulsed laser will not be able to pass through the support carrier, causing the support carrier to heat up, and this heat will have a negative impact on the processed layer, making it impossible to effectively process the processed layer. Therefore, the wavelength of the pulsed laser is preferably between 300 nm and 400 nm. The wavelength of the pulsed laser should be the wavelength that the release layer can absorb, so the wavelength used can be appropriately determined according to the material of the release layer.

[0136] The pulse width of the pulsed laser received by the release layer should be below 1 nanosecond, preferably below 100 picoseconds, and even better below 50 picoseconds. The lower limit value of the pulse width is adjusted according to factors such as the laser intensity required to deteriorate the release layer, and is generally 1 to 5 picoseconds.

[0137] The average output power of the pulsed laser is, for example, 1 W or more. The irradiation pitch of the pulsed laser is adjusted according to the condition that adjacent light spots do not overlap and can deteriorate the release layer. The appropriate pitch is 20 micrometers to 300 micrometers, and the more ideal pitch is 50 micrometers to 250 micrometers. The frequency of the pulsed laser is preferably 20 kHz or more, and the more ideal frequency is 30 kHz to 200 kHz.

[0138] Preferably, the entire release layer can be uniformly irradiated to deteriorate the release layer, so that the support carrier can be easily separated from the processed layer, or the release layer can also be locally irradiated with a pulsed laser beam.

[0139] In particular, starting from the support carrier side, it is more ideal to scan and irradiate the entire surface of the release layer with a pulsed laser, and it is even more ideal to focus the pulsed laser on the release layer. The scanning method is not particularly limited. For example, on the X-Y plane of the release layer, the pulsed laser can be linearly irradiated in the X-axis direction, and then the irradiation area can be moved in the Y-axis direction to irradiate the entire surface, or the pulsed laser can be irradiated at an angle, and the irradiation part can be sequentially moved from the center to the periphery or from the periphery to the center to irradiate the entire surface.

[0140] The irradiation device can use various types of solid-state lasers, such as all-solid-state lasers like YAG lasers, ruby lasers, glass lasers, YVO4 lasers, LD lasers, fiber lasers, and optically pumped semiconductor lasers; it can also use liquid lasers, such as dye lasers; it can also use gas lasers, such as CO2 lasers, excimer lasers, Ar lasers, and He-Ne lasers; and there are also semiconductor lasers. As an irradiation device capable of irradiating with the above-mentioned short pulse width, specifically, for example, devices such as the HyperRapid NX series, RAPID series, Talisker series, and FLARE NX manufactured by Coherent Japan Co., Ltd.

[0141] <Step (c)>

[0142] In step (c), a force is applied to the processed layer or the support carrier, for example, the processed layer is peeled off from the support carrier to separate the two. Preferably, step (c) of separation is performed after the light irradiation in step (b), but step (c) of separation can also be performed while performing the light irradiation in step (b).

[0143] The separation method can be, for example, the following methods. Method 1 is to apply an external force to the processed layer or the support carrier in a direction parallel to the surface of the processed layer to separate the processed layer from the support carrier. Method 2 is to fix one of the processed layer and the support carrier and lift the other at a certain angle from a direction parallel to the surface of the processed layer to separate the processed layer from the support carrier.

[0144] In Method 1, in a state where the support carrier is fixed, the processed layer is horizontally slid on the surface of the support carrier, or the processed layer and the support carrier are separated by applying a force to the support carrier that is opposite to the force applied to the processed layer.

[0145] In Method 2, a force is applied in a slightly vertical direction to the surface of the processed layer to separate the processed layer from the support carrier. The "applying a force in a slightly vertical direction" mentioned here means that relative to the vertical axis (usually the Z-axis) of the surface of the processed layer, it is usually in the range of 0° to 60°, preferably in the range of 0° to 45°, more preferably in the range of 0° to 30°, even more preferably in the range of 0° to 5°, especially 0°, that is, applying a force perpendicular to the surface of the processed layer. The direction perpendicular to the surface of the processed layer is usually the stacking direction of the respective components constituting the laminate. As a separation method, for example, the following method can be performed: lift the periphery of the processed layer or the support carrier and apply a force in a direction substantially perpendicular to the surface of the processed layer, and at the same time peel off (hook-pull) sequentially from the periphery to the center.

[0146] In the above separation process, it is usually carried out in the temperature range of 5°C to 100°C, preferably in the range of 10°C to 45°C, and more preferably in the range of 15°C to 30°C. The temperature here refers to the temperature of the support carrier. In addition, when performing the separation, in order to prevent damage to the processed layer, a reinforcing tape, such as a commercially available adhesive tape, can be attached to the reverse side of the temporary contact surface between the processed layer and the support carrier. In the present invention, as described above, the separation of the processed layer from the support carrier mainly occurs at the release layer. If there are bumps on the processed layer, damage to the bumps needs to be prevented during the separation process.

[0147] <Step (d)>

[0148] After separating the support carrier from the processed layer, the temporary fixing unit, such as including the adhesive layer and the release layer, can remain on the processed layer. After separation, the temporary fixing unit remaining on the processed layer can be removed by a peeling process or by cleaning with a solvent.

[0149] In the present invention, by shortening the pulse width of the pulsed laser, heat generation in the irradiated release layer can be effectively suppressed. Therefore, when the temporary fixing unit includes the release layer and the adhesive layer, it is possible to prevent the problem that heat is generated due to light irradiation of the release layer, resulting in deterioration such as thermal curing of the adhesive layer, making the peeling process difficult.

[0150] In order to peel off the temporary fixing unit, it is preferable to use a tape, and the adhesive force between the tape and the temporary fixing unit can be higher than the adhesive force between the processed layer and the temporary fixing unit. By laminating the tape on the temporary fixing unit and peeling off the tape together with the temporary fixing unit, the temporary fixing unit can be removed.

[0151] The solvent cleaning method includes, for example, a method of immersing the processed layer in a solvent, a method of spraying the solvent on the processed layer, a method of applying ultrasonic waves while immersing the processed layer in the solvent, etc. The temperature of the solvent is not particularly limited, preferably 20°C to 80°C, and more preferably 20°C to 50°C.

[0152] The solvents in this solvent cleaning method are, for example, sulfoxide solvents, ketone solvents, alcohol / ether solvents, ester / lactone solvents, or hydrocarbon solvents, etc. The sulfoxide solvents are, for example, dimethyl sulfoxide or diethyl sulfoxide, etc. The ketone solvents are, for example, 3-methyl-2-pyrrolidone, N,N-dimethyl propionamide, 3-butyl-2-pyrrolidone, N-methyl-2-pyrrolidone, N-(2-methylpropyl)-2-pyrrolidone, N-(tert-butyl)-2-pyrrolidone, N-cyclohexyl-2-pyrrolidone, 2-heptanone, 3-heptanone, 4-heptanone, methyl isobutyl ketone, cyclopentanone, or cyclohexanone, etc. The alcohol / ether solvents are, for example, isopropyl alcohol, propylene glycol monomethyl ether, propylene glycol dimethyl ether, diethylene glycol monoethyl ether, or diethylene glycol, etc. The ester / lactone solvents are, for example, ethyl acetate, butyl ketone acid ester, isobutyl acetate, lactic acid acetate, ethyl 3-ethoxypropionate, propylene glycol monomethyl ether acetate, diethylene glycol monoethyl ether acetate, methyl propyl acetate, ethyl vinyl acid, propyl acrylate, or γ-butyrolactone, etc. The hydrocarbon solvents are, for example, xylene, pinene, methyl cyclohexene, dipentene, pinene, tert-butyl-3,5-dimethylbenzene, tert-butyl cyclohexane, hexyl-1-tert-butyl-3,5-dimethylbenzene, or tert-butyl cyclohexane, etc.

[0153] After the processed layer is separated from the support carrier, further, another processing treatment can be performed on the processed layer. For example, bumps are formed on the wiring layer of the RDL-First structure or it is cut into individual packages by dicing, etc.

[0154] [Method for manufacturing a semiconductor device]

[0155] The method for manufacturing a semiconductor device of the present invention includes processing a processed layer obtained by the above-described method of using a photoabsorbing release composition to form a semiconductor device. After the semiconductor device such as a semiconductor element obtained by processing the processed layer is peeled off from the support carrier, the temporary fixing unit can be easily removed by a peeling treatment or a solvent cleaning treatment. Therefore, in this semiconductor device, the deterioration caused by light irradiation during peeling is small, and the contamination such as spots and charring caused by the temporary fixing unit is also reduced.

[0156] The present invention will be further described with reference to the following examples, but it should be understood that these examples are only for illustrative purposes and should not be construed as limitations on the implementation of the present invention.

[0157] Synthesis Example 1

[0158] A nitrogen inlet, a stirrer, a condenser and a thermometer were provided on a 500 ml four-necked conical flask, and nitrogen was introduced. Then, 20 moles of 1,3-bis(4-aminophenoxy)propane (abbreviated as b1-1), 80 moles of the diamine compound shown in formula (II-1) (abbreviated as b2-1), and 80 g of N-methyl-2-pyrrolidone (abbreviated as NMP) were introduced into the four-necked conical flask and mixed, and stirred at room temperature until dissolved. Then, 100 moles of 2,2',3,3'-diphenyltetracarboxylic dianhydride (abbreviated as a-1) and 20 g of NMP were added, and then reacted at room temperature for 6 hours to obtain a reaction solution. The reaction solution was poured into 1500 ml of water to obtain a precipitate. Then, filtration was carried out to obtain a filter cake, and the filter cake was washed with methanol, and the above filtration and washing were repeated three times in total, and then placed in a vacuum oven and dried at a temperature of 60 °C to obtain a polymer.

[0159] Synthesis Examples 2 to 12, Synthesis Example 17 and Comparative Synthesis Examples 1 to 2

[0160] Synthesis Examples 2 to 12, Synthesis Example 17 and Comparative Synthesis Examples 1 to 2 were similar to the method of this Synthesis Example 1, except that: the types or amounts of each component were changed, refer to Tables 1 to 2.

[0161] Synthesis Example 13

[0162] A nitrogen inlet, a stirrer, a condenser and a thermometer were provided on a 500 ml four-necked conical flask, and nitrogen was introduced. Then, 50 moles of 1,5-bis(3-aminophenoxy)pentane (abbreviated as b1-5), 50 moles of the diamine compound shown in formula (II-2) (abbreviated as b2-5), and 80 g of N-methyl-2-pyrrolidone (abbreviated as NMP) were introduced into the four-necked conical flask and mixed, and stirred at room temperature until dissolved. Then, 50 moles of 3,3',4,4'-diphenyltetracarboxylic dianhydride (abbreviated as a-2), 50 moles of 3,3',4,4'-benzophenone tetracarboxylic dianhydride (abbreviated as a-4), and 20 g of NMP were added. Reacted at room temperature for 6 hours, then 97 g of NMP, 0.03 moles of acetic anhydride and 0.05 moles of pyridine were added, the temperature was raised to 110 °C, and stirring was continued for 2 hours to carry out an imidization reaction to obtain a reaction solution. The reaction solution was poured into 1500 ml of water to obtain a precipitate. Then, filtration was carried out to obtain a filter cake, and the filter cake was washed with methanol, and the above filtration and washing were repeated three times in total, and then placed in a vacuum oven and dried at a temperature of 60 °C to obtain a polymer with an imidization rate of 35%.

[0163] Synthesis Examples 14 to 16, Synthesis Example 18 and Comparative Synthesis Example 3

[0164] The methods of Synthesis Examples 14 to 16, Synthesis Example 18, and Comparative Synthesis Example 3 are similar to that of Synthesis Example 13, except that the types or amounts of the respective components are changed. Refer to Table 2.

[0165] Table 1

[0166]

[0167]

[0168]

[0169] Table 2

[0170]

[0171]

[0172]

[0173] Example 1

[0174] 100 parts by weight of the polymer of Synthesis Example 1, 5 parts by weight of a light absorbent (manufactured by Mitsubishi Chemical; trade name: MA100), 300 parts by weight of N-methyl-2-pyrrolidone, and 200 parts by weight of diacetone alcohol were mixed at room temperature to obtain a light-absorbing release composition.

[0175] Examples 2 to 20 and Comparative Examples 1 to 4

[0176] Examples 2 to 20 and Comparative Examples 1 to 4 are similar to the method of Example 1, except that the types or amounts of the respective components are changed. Refer to Tables 3 to 5.

[0177] Evaluation Items

[0178] Measurement of peelability: The light-absorbing release compositions of Examples 1 to 20 and Comparative Examples 1 to 4 were introduced into a coater (manufacturer: MIKASA; model: MS-A150) and spin-coated on a 100 mm × 100 mm glass substrate. Then, a reduced-pressure drying treatment was performed for 5 seconds under the condition of 100 mmHg, and then it was placed in an oven and pre-baked at 100 °C for 2 minutes to form a pre-baked film with a film thickness of about 1 μm. Then, it was post-baked at 350 °C for 30 minutes to form a post-baked film with a film thickness of 1.0 μm.

[0179] Use a laser irradiation device (brand: ESI Co.; model: 5331) to provide a laser with a wavelength of 355 nm, and irradiate the post-baked film through the glass substrate to obtain a release film. The size of the irradiation area is 10 mm × 100 mm, and it is carried out under the conditions of a light output of 4 W, a repetition frequency of 40 kHz, and a supply rate of 500 mm / s. Then, stick the tape on the release film, and then tear off the tape and observe the situation of the release film remaining on the glass substrate. The evaluation is carried out according to the following criteria:

[0180] ◎: The remaining area of the release film ≤ 1%, or it is completely peeled off;

[0181] O: 5% ≥ the remaining area of the release film > 1%;

[0182] △: 15% ≥ the remaining area of the release film > 5%;

[0183] X: The remaining area of the release film > 15%, or it cannot be peeled off.

[0184] Measurement of etching resistance: Introduce the light-absorbing release compositions of Examples 1 to 20 and Comparative Examples 1 to 4 into a coater (brand: MIKASA; model: MS-A150), and coat it on a 100 mm × 100 mm glass substrate by spin coating. Then, perform a reduced-pressure drying treatment for 5 seconds under the condition of 100 mmHg, and then place it in an oven and pre-bake it for 2 minutes at 100 °C to form a pre-baked film with a film thickness of about 1 μm. Then, post-bake it for 30 minutes at 350 °C to form a post-baked film with a film thickness of 1.0 μm.

[0185] Immerse the post-baked film in the etching solution at room temperature for 30 minutes. The etching solution is a titanium etching solution. Then, take out the post-baked film from the etching solution and dry it. Then, according to the cross-cut test method, perform a peeling test on the post-baked film, and evaluate it according to the following criteria: ◎: No peeling of the cross-hatched grid;

[0186] O: 5% ≥ peeling of the cross-hatched grid > 0%;

[0187] △: 15% ≥ peeling of the cross-hatched grid > 5%;

[0188] ╳: Peeling of the cross-hatched grid > 15% or complete peeling.

[0189] Table 3

[0190]

[0191]

[0192] Table 4

[0193]

[0194]

[0195] Table 5

[0196]

[0197]

[0198] As can be seen from Tables 3 to 5, the polymer (A) in Examples 1 to 20 was prepared using the diamine compound represented by formula (I), and the release layer formed from the light-absorbing release composition containing the polymer (A) could be peeled off without residue after being irradiated with light. Based on this, the release layer formed from the light-absorbing release composition containing the polymer (A) in the present invention indeed has excellent peelability after being irradiated with light. Further, the release layer formed from the light-absorbing release composition containing the polymer (A) is not easily peeled off after undergoing a wet etching process. Based on this, the release layer formed from the light-absorbing release composition containing the polymer (A) in the present invention also has excellent etching resistance.

[0199] On the contrary, Comparative Examples 1 to 4 are considered. In Comparative Examples 1 to 3, the polymers were not prepared using the diamine compound represented by formula (I), and the release layer formed from the light-absorbing release composition containing the polymer was not easily peeled off after being irradiated with light and remained, resulting in poor peelability.

[0200] In Comparative Example 4, although the polymer (A) prepared using the diamine compound represented by formula (I) was used, the absorbent (B) was not used. Therefore, the release layer was easily peeled off after undergoing a wet etching process, resulting in poor etching resistance, and the release layer after being irradiated with light was not easily peeled off and remained, resulting in poor peelability.

[0201] In summary, by using the polymer (A) formed from the diamine compound (b1) represented by formula (I) of the diamine component (b) and the absorbent (B), the release layer formed from the light-absorbing release composition of the present invention can have excellent peelability after being irradiated with pulsed laser, so the object of the present invention can indeed be achieved.

Claims

1. A method for using a light-absorbing release composition, characterized in that Comprising: Step (a): A processing treatment is applied to a layer to be processed of a laminate to form a processed layer. The laminate defines a stacking direction and sequentially includes a support carrier, a temporary fixing unit including a release layer, and the layer to be processed in the stacking direction. Before or after the processing treatment, the laminate is selectively subjected to a moving treatment; Step (b): After step (a), the release layer is irradiated through the support carrier by a pulsed laser; And Step (c): After step (a), simultaneously with step (b) or after step (b), the support carrier is separated from the processed layer to obtain the processed layer; The release layer is formed from a light-absorbing release composition, and the light-absorbing release composition includes a polymer (A), a light-absorbing agent (B), and a solvent (C); The polymer (A) is selected from polyamic acid polymers, polyimide polymers, polyimide-based block copolymers, or any combination thereof, and is prepared by reacting a mixture including a tetracarboxylic dianhydride component and a diamine component. The diamine component includes a diamine compound (b1) represented by formula (I); n represents an integer from 1 to 12.

2. The method of using the light-absorbing release composition according to claim 1, wherein: The diamine component further includes at least one aromatic diamine compound (b2) selected from the group consisting of: an aromatic diamine compound represented by formula (II) and an aromatic diamine compound represented by formula (III); R 1 represents a single bond, -C(CH3)2-, -(CH2) n1 -, -C(CF3)2-, -O-(CH2) n2 -O-, -O-, -S-(CH2) n3 -S-, -S-, -S-S-, -SO2-, -CO-, -CONH-, or -NHCO-, n1, n2 and n3 independently represent 1 to 12 R 2 represents a single bond, -C(CH3)2-, -O-, -S-, -CO-, -C(CF3)2-, or an alkylene group having 1 to 10 carbon atoms Any hydrogen on any benzene ring may be substituted by -F, -CH3, -CF3, -OH, or a phenyl group; R 3 represents a single bond, -C(CH3)2-, -(CH2) m1 -, -C(CF3)2-, -O-(CH2) m2 -O-, -O-, -S-(CH2) m3 -S-, -S-, -S-S-, -SO2-, -CO-, -CONH-, or -NHCO-, m1, m2, and m3 independently represent 1 to 12, R 4 represents a single bond, -C(CH3)2-, -C(CF3)2-, -O-, -S-, -CO-, or an alkylene group having 1 to 10 carbon atoms R 5 represents a single bond, -C(CH3)2-, -C(CF3)2-, -O-, -S-, -CO-, or an alkylene group having 1 to 10 carbon atoms Any hydrogen on any benzene ring may be substituted by -F, -CH3, -CF3, -OH, or a phenyl group.

3. The method of using the light-absorbing release composition according to claim 1, characterized in that: The wavelength of the pulsed laser is 400 nm or less.

4. The method of using the light-absorbing release composition according to claim 1, characterized in that: The polymer (A) is a polyamic acid polymer.

5. The method for using the light-absorbing release composition according to claim 1, wherein: The light-absorbing agent (B) includes a black pigment.

6. The method for using the light-absorbing release composition according to claim 1, characterized in that: Based on 100 parts by weight of the polymer (A), the amount of the light-absorbing agent (B) used is 5 to 200 parts by weight, and the amount of the solvent (C) used is 500 to 4000 parts by weight.

7. The method for using the light-absorbing release composition according to claim 1, characterized in that: Based on the total amount of the diamine component (b) being 100 mol%, the amount of the diamine compound (b1) represented by formula (I) used is 20 to 90 mol%.

8. The method for using the light-absorbing release composition according to claim 2, wherein: When the total amount of the diamine component (b) is 100 mol%, the amount of the aromatic diamine compound (b2) used is 10 to 80 mol%.

9. The method of using the light-absorbing release composition according to any one of claims 1 to 8, characterized in that: The temporary fixing unit further includes an adhesive layer, such that the laminate sequentially has the support carrier, the release layer, the adhesive layer, and the layer to be processed.

10. A method for manufacturing a semiconductor device, characterized in that Comprising: Processing the processed layer obtained by the method for using the light-absorbing release composition according to any one of claims 1 to 9 to form a semiconductor device.

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