Vacuum processing device, electrostatic chuck, and transport roller

Abstract

A vacuum processing apparatus according to one embodiment of the present invention is provided with: a vacuum chamber; a support body having a base portion disposed in the vacuum chamber and made of a conductor, and a surface layer made of a dielectric and covering the surface of the base portion, the surface layer having a support surface on which a substrate to be processed is electrostatically adsorbed; and a surface treatment means for treating the surface of the substrate adsorbed on the support surface, the thickness of the surface layer being 250 [mu] m or more and 800 [mu] m or less, and the support length ratio of 50% or more of the cross-sectional height of the support surface being 90% or more.

Description

[0001] This application is a divisional application of the invention patent application with the application number 202380013279.4. The filing date of the original application is October 26, 2023, and the invention title is "Vacuum Processing Apparatus, Electrostatic Chuck, and Transport Roll". Technical Field

[0002] The present invention relates to a vacuum processing apparatus such as a roll-to-roll film forming apparatus, an electrostatic chuck used therein, and a transport roll. Background Art

[0003] Conventionally, a vacuum evaporation apparatus has been known in which a long raw material film continuously discharged from a pay-off roll is wound around a cooling roll while an evaporation substance from an evaporation source disposed opposite to the cooling roll is evaporated onto the raw material film, and the evaporated raw material film is wound by a winding roll. In such a vacuum evaporation apparatus, in order to prevent thermal deformation of the raw material film during evaporation, the raw material film is adhered to the circumferential surface of the cooling roll and cooled while the film forming process is performed. Therefore, how to ensure the adhesion of the raw material film to the cooling roll has become an important problem.

[0004] As a structure for increasing the adhesion force between the raw material film and the cooling roll, for example, the following technique is disclosed in Patent Document 1 below: An auxiliary roll is disposed between the cooling roll and the winding portion that winds the raw material film. The auxiliary roll contacts a metal film vapor-deposited on the film forming surface of the raw material film. By applying a DC voltage between these cooling roll and the auxiliary roll, an electrostatic adsorption force is generated between the metal film on the raw material film and the cooling roll, and the adhesion of the raw material film to the cooling roll is improved.

[0005] Similarly, Patent Document 2 below discloses a technique related to an insulator layer formed on the surface of a cooling roll in a technique of forming metal films on both sides of a raw material film by using the electrostatic adsorption action between the above-described cooling roll and the raw material film.

[0006] Prior Art Documents

[0007] Patent Documents

[0008] Patent Document 1: Japanese Patent No. 3795518 Gazette;

[0009] Patent Document 2: Japanese Patent No. 5481239 Gazette.

[0010] Problems to be Solved by the Invention

[0011] In a film forming method that utilizes the electrostatic adsorption between a cooling roll and a raw material film, the dielectric breakdown voltage between them becomes a problem. For example, the insulating layer provided on the outer peripheral surface of the cooling roll is usually formed by thermal spraying. If discharge occurs in a place where the dielectric breakdown voltage of the thermal spray film is weak, the adhesion of the raw material film located at that part decreases, and it may be severely damaged by the heat from the evaporation source.

[0012] In addition, as a method for increasing the dielectric breakdown voltage between the cooling roll and the raw material film, it is possible to consider increasing the thickness of the insulating layer on the surface of the cooling roll. However, the larger the thickness of the thermal spray film, the more fragile it becomes, and there is a risk of reducing the adsorption force due to cracking, peeling, etc.

[0013] Furthermore, such problems are not limited to roll-type vacuum processing apparatuses. The same problems also exist in electrostatic chucks of worktables used to support semiconductor wafers, glass substrates, etc. when forming films on them. In such worktables, a structure is known in which a cooling gas such as He circulates between the surface of the electrostatic chuck and the back surface of the substrate. In this case, when dielectric breakdown occurs in the insulating layer of the electrostatic chuck that supports the back surface of the substrate, there is a high risk of reducing the adhesion between the worktable and the substrate. Summary of the Invention

[0014] In view of the above circumstances, an object of the present invention is to provide a vacuum processing apparatus, an electrostatic chuck, and a transport roll that can achieve both adsorption force and dielectric breakdown voltage.

[0015] Means for Solving the Problems

[0016] A vacuum processing apparatus according to one aspect of the present invention includes: a vacuum chamber, a support, and a surface treatment unit.

[0017] The support has a base portion and a surface layer. The base portion is disposed in the vacuum chamber and is made of a conductor. The surface layer is made of a dielectric and covers the surface of the base portion. The surface layer has a support surface for electrostatically adsorbing a substrate to be processed.

[0018] The surface treatment unit treats the surface of the substrate adsorbed on the support surface.

[0019] The thickness of the surface layer is 200 μm or more and 800 μm or less, the surface roughness (Ra) of the support surface is 0.06 μm or more and 0.2 μm or less, and the support length ratio of 50% or more of the cross-sectional height is 90% or more.

[0020] In the present invention, the thickness of the surface layer is set to be 200 μm or more and 800 μm or less, the surface roughness (Ra) of the supporting surface of the supporting substrate is set to be 0.06 μm or more and 0.2 μm or less, and the support length ratio of 50% or more of the cross-sectional height is set to be 90% or more. Thereby, the adhesion between the substrate and the surface layer of the support is improved, and thus both the adsorption force and the dielectric withstand voltage are achieved. In addition, since the adhesion between the substrate and the surface layer is improved, the heat transfer efficiency between them is also improved, and thus the thermal deformation of the substrate can be suppressed.

[0021] The thickness of the surface layer can be 400 μm or more and 600 μm or less. Thereby, the dielectric withstand voltage of the surface layer can be further improved.

[0022] The surface layer can be alumina containing titanium oxide. In addition to titanium oxide, carbon, SiC, etc. can also be added. As the dielectric material constituting the surface layer other than this, PBN, SiN, Al2O3, ZrO, MgO, SiO, CrO, CaO, AlN, etc. can also be used.

[0023] The substrate can adopt a long strip film. In this case, the support can be at least one transport roller that is wound by the substrate and transports the substrate.

[0024] Thereby, the surface treatment of the substrate can be continuously performed in the long side direction of the substrate.

[0025] Alternatively, the substrate can adopt a semiconductor substrate or a glass substrate. In this case, the support can be a workbench on which the substrate is placed.

[0026] The vacuum processing device may further include a first voltage supply circuit. The first voltage supply circuit includes: an auxiliary roller that is disposed on the downstream side or the upstream side of the transport roller and contacts one main surface of the substrate; and a voltage source that applies a DC voltage between the auxiliary roller and the transport roller. In this case, the surface treatment unit may include a first film forming unit that evaporates a conductive material on the one main surface of the substrate.

[0027] Alternatively, the vacuum processing device may further include a second voltage supply circuit. The second voltage supply circuit includes: an auxiliary roller that is disposed on the upstream side or the downstream side of the transport roller and contacts one surface of the substrate on which a conductive material is formed; and a voltage source that applies a DC voltage between the auxiliary roller and the transport roller. In this case, the surface treatment unit may include a second film forming unit that evaporates a conductive material on the other main surface of the substrate.

[0028] The vacuum processing apparatus may further include: an electrostatic elimination unit that irradiates charged particles for eliminating static electricity of the substrate or the transport roller onto the substrate. Thereby, peeling electrification of the substrate from the transport roller can be suppressed, and thus generation of discharge can be effectively suppressed when the substrate is peeled from the transport roller.

[0029] An electrostatic chuck according to one embodiment of the present invention includes: a base portion and a surface layer.

[0030] The base portion is made of a conductor.

[0031] The surface layer is made of a dielectric and covers the surface of the base portion, and has a support surface for electrostatically adsorbing a substrate to be processed.

[0032] The thickness of the surface layer is 200 μm or more and 800 μm or less, the surface roughness (Ra) of the support surface is 0.06 μm or more and 0.2 μm or less, and the support length ratio of 50% or more of the cross-sectional height is 90% or more.

[0033] A transport roller according to one embodiment of the present invention includes: a rotatable cylindrical base portion and a surface layer.

[0034] The base portion is made of a conductor.

[0035] The surface layer is made of a dielectric and covers the surface of the base portion, and has a support surface for electrostatically adsorbing a long film to be processed.

[0036] The thickness of the surface layer is 200 μm or more and 800 μm or less, the surface roughness (Ra) of the support surface is 0.06 μm or more and 0.2 μm or less, and the support length ratio of 50% or more of the cross-sectional height is 90% or more.

[0037] Advantageous Effects of the Invention

[0038] According to the present invention, it is possible to achieve both adsorption force and insulation breakdown voltage. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] Figure 1 is a schematic structural diagram of a vacuum processing apparatus according to a first embodiment of the present invention.

[0040] Figure 2 is Figure 1 a cross-sectional view of a main part of a support (transport roller) in the vacuum processing apparatus of

[0041] Figure 3 is Figure 2 an enlarged cross-sectional view of part A in

[0042] Figure 4Schematic diagram of an electrostatic chuck mechanism that generates an electrostatic adsorption force on a film.

[0043] Figure 5 Graph for explaining the relationship between the thickness of the dielectric layer and the adsorption force in the electrostatic chuck mechanism.

[0044] Figure 6 Graph for explaining the relationship between the thickness of the dielectric layer and the magnitude of the leakage current in the electrostatic chuck mechanism.

[0045] Figure 7 Experimental results of measuring the surface potential of the film when a metal film with a thickness of 1 μm is formed.

[0046] Figure 8 Schematic structural diagram of the vacuum processing apparatus according to the second embodiment of the present invention.

[0047] Figure 9 For Figure 8 Schematic diagram of the electrostatic chuck mechanism formed between the first transport roller and the second transport roller and the film in the vacuum processing apparatus.

[0048] Figure 10 To represent Figure 3 Schematic cross-sectional view showing a modified example of the structure of the surface layer in Detailed implementation mode

[0049] Hereinafter, embodiments of the present invention will be described with reference to the drawings.

[0050] <First Embodiment>

[0051] Figure 1 Schematic structural diagram of the vacuum processing apparatus 100 according to the first embodiment of the present invention. The vacuum processing apparatus 100 of the present embodiment is configured as a roll-to-roll vacuum evaporation apparatus.

[0052] [Overall Structure]

[0053] The vacuum processing apparatus 100 of the present embodiment includes: a vacuum chamber 10, a film forming unit 20, a film transport unit 30, a voltage supply circuit 40, and an electrostatic elimination unit 50.

[0054] The vacuum chamber 10 is a metal-sealed container connected to the ground potential. The vacuum chamber 10 is connected to an exhaust pipeline 13 having a vacuum pump 11 and a vacuum valve 12. The inside of the vacuum chamber 10 is configured to be evacuated to a specified reduced pressure environment or maintained in a specified reduced pressure environment through the exhaust pipeline 13. The vacuum chamber 100 houses the film forming unit 20 and the film transport unit 30. A partition 14 is provided inside the vacuum chamber 100, and the inside of the vacuum chamber 100 is divided into a film forming chamber 15 and a transport chamber 16 by the partition 14.

[0055] The film forming unit 20 is disposed in the film forming chamber 15. In the present embodiment, the film forming unit 20 is an evaporation source for evaporating an arbitrary evaporation material. The film forming unit 20 is a specific example of a surface treatment unit that treats the surface of the film F adsorbed on the main roller 33 of the film transport unit 30.

[0056] The film forming unit 20 has a heating mechanism for heating the evaporation material. As the heating mechanism, any heating mechanism such as resistance heating, induction heating, electron beam heating, etc. can be adopted. As the evaporation material, typically, metal materials such as aluminum, copper, lithium, tin, zinc, or their alloys can be cited, and also oxides, nitrides, fluorides, etc. of these metals.

[0057] The film transport unit 30 is disposed in the transport chamber 16. The film transport unit 30 has: an unwinding roller 31 that continuously unwinds the film F as a base material; a winding roller 32 that continuously winds the film F unwound from the unwinding roller 31; and a main roller 33 (transport roller) that is provided on the film transport path between the unwinding roller 31 and the winding roller 32. The film transport unit 30 also has a first auxiliary roller 34 made of metal disposed on the upstream side of the main roller 33 and a second auxiliary roller 35 made of metal disposed on the downstream side of the main roller 33.

[0058] The unwinding roller 31, the winding roller 32, and the main roller 33 respectively have a rotation driving unit (not shown), and are configured to rotate at a prescribed speed in the direction of the arrow shown in the figure. Thereby, the film F is transported from the unwinding roller 31 to the winding roller 32 at a prescribed transport speed within the vacuum chamber 100. It should be noted that the first auxiliary roller 34 and the second auxiliary roller 35 are respectively composed of free rollers without a rotation driving unit, but are not limited thereto, and may also respectively have a rotation driving unit.

[0059] At least a part of the main roller 33 faces the film forming unit 20 through the opening 14a provided in the partition 14. The film F is transported to the winding roller 32 while being wound around the outer peripheral surface of the main roller 33 at a prescribed wrap angle, and the surface area exposed to the film forming chamber 15 through the opening 14a is film-formed by the film forming unit 20. The film F is continuously film-formed along the long side direction on the outer peripheral surface of the main roller 33 while being wound by the winding roller 32.

[0060] The film F is an insulator and is composed of a resin film such as an OPP (oriented polypropylene) film, a PET (polyethylene terephthalate) film, a PPS (polyphenylene sulfide) film, a PI (polyimide) film, etc.

[0061] In addition, by connecting the vacuum exhaust pipeline 14 to the film forming chamber 15, in the exhaust, due to the presence of the partition 14, a pressure difference is generated between the film forming chamber 15 and the transport chamber 16. Through this pressure difference, it is possible to suppress the evaporation flow of the evaporation material from invading the transport chamber 16 through the opening 14a.

[0062] The voltage supply circuit 40 has a voltage source 41 that applies a prescribed DC voltage between the main roller 33 and the second auxiliary roller 35. In the present embodiment, the voltage source 41 is constituted by a variable DC power supply, and of course, it may also be a fixed power supply. The voltage supply circuit 40 applies a positive potential to the second auxiliary roller 35 and a negative potential (ground potential) to the main roller 33. Additionally, without being limited thereto, a positive potential may be applied to the main roller 33 and a negative potential may be applied to the second auxiliary roller 35. The voltage source 41 is provided outside the vacuum chamber 100.

[0063] The second auxiliary roller 35 guides the film F toward the winding roller 32 while being in contact with the film formation surface of the film F on which the film formation process has been performed on the main roller 33. Therefore, since the second auxiliary roller 35 is in contact with the metal film M (refer to Figure 3 ) formed on the film formation surface of the film F, the DC voltage from the voltage source 41 is input between the main roller 33 and the metal film M on the film F supported on the outer peripheral surface thereof. As a result, the film F is adsorbed on the outer peripheral surface of the main roller 33 by the electrostatic force generated between the main roller 33 and the metal film M.

[0064] The static eliminator unit 50 is configured to suppress the electrification of the film F or the electrification of the main roller 33 (peeling electrification) generated when the film F is peeled from the main roller 33, and is configured to be able to irradiate the film F or the main roller 33 with charged particles for static elimination. In the present embodiment, the static eliminator unit 50 is disposed directly above the main roller 33 and is constituted by an ion irradiator that irradiates positive ions such as argon ions onto the non-film formation surface of the film F peeled from the main roller 33. Additionally, without being limited thereto, the static eliminator unit 50 may also be configured to directly irradiate a part of the outer peripheral surface of the main roller 33 on which the film F is not wound ( Figure 1 the region 33w indicated by the double-dot dash line in ) with charged particles for static elimination.

[0065] [Details of the main roller]

[0066] Next, the details of the main roller 33 will be described. Figure 2 is a cross-sectional view of the main part of the main roller 33, Figure 3 is Figure 2 an enlarged cross-sectional view of part A in.

[0067] The main roller 33 is configured as a support for the film F in the vacuum processing apparatus 100, and the film F is a substrate to be processed. The main roller 33 has: a cylindrical or columnar base portion 331 made of a conductive material; and a surface layer 332 that covers the outer surface of the base portion 331.

[0068] The base portion 331 is made of metallic materials such as stainless steel, iron, and aluminum. Inside the base portion 331, for example, a temperature control unit such as a temperature control medium circulation system (not shown) may be provided. As the heat medium circulated in the temperature control unit, for example, a high-boiling organic medium such as silicone oil can be used. As the refrigerant, water can be cited. The size of the base portion 331 is not particularly limited. Typically, the width dimension in the axial direction is set to be larger than the width dimension of the film F.

[0069] In the present embodiment, since a resin film is used as the film F, in order to prevent the film F from being deformed due to heat radiation from the film forming unit 20, sensible heat or latent heat of the vapor deposition film (metal film M), the refrigerant is circulated in the base portion 331 to cool the film F to a temperature below a specified temperature, thereby suppressing wrinkles caused by thermal deformation. Thus, the main roller 33 functions as a cooling roller.

[0070] The surface layer 332 is made of a dielectric material and is a thermal spray film formed on the outer peripheral surface of the base portion 331 in the present embodiment. The surface layer 332 has a support surface 333 for electrostatically adsorbing the film F. That is, in the present embodiment, the main roller 33 functions as an electrostatic chuck for electrostatically adsorbing the film F on the support surface 333.

[0071] The electrostatic chuck utilizes several electrostatic adsorption actions mainly based on, for example, Coulomb force, Johnson-Rabe force, and gradient force. The electrostatic chuck mainly based on Coulomb force can adsorb by applying a high voltage. The electrostatic chuck mainly based on Johnson-Rabe force forms a state where a minute current flows by adjusting the insulation of the dielectric layer to adsorb the object. The electrostatic chuck mainly based on gradient force arranges the positive and negative electrodes in detail, thereby adsorbing using the electric field generated between the two electrodes. These electrostatic chucks are selected according to the characteristics, types, usage environments, etc. of the object. For example, the Coulomb type is adopted when the object is a conductor or a semiconductor, and the Johnson-Rabe type or gradient type is adopted when the object is an insulator or a semiconductor.

[0072] Figure 4 It is a schematic diagram of an electrostatic chuck mechanism for generating an electrostatic adsorption force on the film F. As shown in this figure, a DC voltage V from a voltage source 41 input between the metal film M formed on the film forming surface of the film F and the base portion 331 of the main roller 33 supports the film F on the support surface 333 by an electrostatic adsorption force corresponding to the magnitude of the DC voltage V. The magnitude of the DC voltage V during film formation is, for example, 500V.

[0073] In the present embodiment, as the dielectric material constituting the surface layer 332, alumina containing titanium oxide is used. The content of titanium oxide is, for example, 5 to 15 wt%. Instead of titanium oxide, carbon, SiC, etc. may be added. In addition, as the dielectric material constituting the surface layer, PBN, SiN, Al2O3, ZrO, MgO, SiO, CrO, CaO, AlN, etc. may also be used.

[0074] Here, in the film formation method using the electrostatic adsorption between the cooling roll and the raw material film, the dielectric breakdown voltage between them becomes a problem. For example, if discharge occurs in a place where the dielectric breakdown voltage of the insulating layer provided on the outer peripheral surface of the cooling roll is weak, the adhesion of the raw material film located at that part decreases, and it may be greatly damaged by the heat from the evaporation source.

[0075] To solve such a problem, in the present embodiment, the surface layer 332 is configured such that the surface roughness (Ra) of the support surface 333 is 0.06 μm or more and 0.2 μm or less, and the support length ratio (tp) of 50% or more of the cross-sectional height is 90% or more. As a result, since the contact area between the film F and the support surface 333 becomes larger, the adhesion of the film F to the support surface 333 is improved, and thus an increase in the adsorption force can be achieved.

[0076] Since the film F and the support surface 333 are in solid contact, simply suppressing the surface roughness of the support surface 333 below a specified value does not necessarily increase their contact area. Therefore, in the present embodiment, the support surface 333 is adjusted such that the support length ratio of 50% or more of the specified cross-sectional height becomes 90% or more. As a result, when the voltage value of the DC voltage is 100 V or more, the thermal conductivity between the film F and the support surface 333 can be about 1000 W / (m 2 ·K) or more, and the film F can be effectively protected from the influence of thermal deformation.

[0077] The support length ratio (tp) is a value expressed as a percentage, which is the ratio of the sum of the cut-off lengths (support length np) obtained by extracting from the roughness curve in the direction of its average line with a reference length and truncating the roughness curve of the extracted part with a cross-sectional height parallel to the peak line to the reference length. In the present embodiment, the support length ratio of 50% of the cross-sectional height is 90% or more, more preferably, the support length ratio of 60% of the cross-sectional height is 95% or more, and further preferably, the support length ratio of 70% of the cross-sectional height is 98% or more.

[0078] In addition, in the present embodiment, the values of the surface roughness (Ra) and the support length ratio (tp) are measured using a surface roughness meter "Controller VK-9500 / Detector 9510" manufactured by Keyence Corporation.

[0079] The method for obtaining the bearing surface 333 having the above surface roughness (Ra) and bearing length ratio (p) is not particularly limited. Typically, after rough polishing using a double-sided polishing machine with loose abrasive grains, the thermal spray film is processed in the order of medium polishing and fine polishing. Specifically, as the fine polishing, polishing abrasive grains with a particle size of about #1000 to #2000 are used to polish in such a way as to remove only the protruding portions (the top of the mountains) on the surface. Chemical polishing can also be used as needed. In addition, the processing direction and processing pressure can be adjusted step by step. By such a processing method, a bearing surface 333 having the above-specified surface roughness (Ra) and bearing length ratio (tp) can be obtained.

[0080] In addition, the surface layer 332 may also have a multi-layer structure of two or more layers. For example Figure 10 as shown in (A) of, the surface layer 332 may be composed of an adhesion layer L0 formed on the surface of the base portion 331 and a dielectric layer DE formed on the adhesion layer L0. The adhesion layer L0 is, for example, nickel-aluminum alloy and can be formed by thermal spraying in the same way as the dielectric layer DE.

[0081] In addition, as Figure 10 shown in (B) of, the surface layer 332 may also be a laminate of a first dielectric layer DE1 and a second dielectric layer DE2. The first dielectric layer DE1 and the second dielectric layer DE2 are typically composed of different materials or different composition ratios. From the viewpoint of improving the adsorption force, the second dielectric layer DE2 forming the outermost layer side of the bearing surface 333 is preferably a material having a higher conductivity than the first dielectric layer DE1, for example. The dielectric layer is not limited to two layers and may also be three or more layers. In addition, as Figure 10 shown in (C) of, the surface layer 322 may also include an adhesion layer L0 formed between the base portion 331 and the first dielectric layer DE1.

[0082] The bearing surface 333 is not limited to the example composed of the dielectric material constituting the surface layer 332, and a part or all of the bearing surface 333 may also be composed of other dielectric materials. In this case, methods such as applying a dielectric material for forming the bearing surface 333 on the surface of the surface layer 332 for fine polishing processing, or applying the above dielectric material when performing fine polishing processing on the surface of the surface layer 332 can be applied.

[0083] In the present embodiment, the film F is adsorbed by the electrostatic adsorption action of the charges accumulated on the bearing surface 333. Therefore, in principle, as Figure 5 shown, regardless of the thickness D of the surface layer as the dielectric layer (refer to Figure 4 ), a fixed adsorption force can be obtained. In addition, as Figure 6As shown, the greater the thickness D of the surface layer 332, the more effectively the leakage current between the film F and the main roller 33 can be reduced. Therefore, by increasing the thickness of the surface layer 332, the dielectric breakdown voltage of the surface layer 332 can be improved.

[0084] However, since the surface layer 332 is a thermal spray film, the greater the thickness D of the surface layer 322, the more fragile it becomes, and there is a risk of reduced adsorption force due to cracking, peeling, etc. Therefore, the thickness D of the surface layer 322 is preferably 200 μm or more and 800 μm or less, more preferably 250 μm or more and 700 μm or less, and still more preferably 400 μm or more and 600 μm or less.

[0085] The inventors prepared dielectric layers having the same structure as the surface layer 322, namely, four samples with thicknesses D of 200 μm, 400 μm, 600 μm, and 800 μm, and conducted an acceleration test on the dielectric breakdown voltage. The applied voltage was 0.32 kV to 5 kV. The experimental results are shown in Table 1.

[0086] As shown in Table 1, in the sample with a thickness of 200 μm, dielectric breakdown was found when the applied voltage was 2 kV, and in the sample with a thickness of 400 μm, dielectric breakdown was found when the applied voltage was 3.5 kV. In addition, no dielectric breakdown was found in the samples with thicknesses of 600 μm and 800 μm. Assuming that the magnitude of the DC voltage V input during film formation is, for example, 500 V, in this case, the thickness D of the surface layer 322 is preferably at least 200 μm or more and 800 μm or less.

[0087] [Table 1]

[0088]

[0089] As described above, according to the present embodiment, the surface layer 332 of the main roller 33 is configured as described above, so that the adhesion between the film F and the support surface 333 of the main roller 33 is improved. Thus, it is possible to achieve both adsorption force and dielectric breakdown voltage. In addition, since the adhesion between the film F and the support surface 333 is improved, the heat transfer efficiency between them is also improved, thereby suppressing the thermal deformation of the film F.

[0090] Furthermore, according to the present embodiment, since there is an electrostatic elimination unit 50 for eliminating static electricity from the film F, it is possible to suppress the peeling charge of the film F from the main roller 33, and effectively suppress the generation of discharge when the film F is peeled from the main roller 33. Thus, damage to the metal film M1 or the support surface 333 of the main roller 33 caused by this discharge can be suppressed.

[0091] In particular, the higher the conveying speed (or film formation rate) of the film F, the more likely it is to significantly generate the above-mentioned peeling charge. Figure 7The experimental results of measuring the surface potential of the film F when a metal film M with a thickness of 1 μm is formed. When there is no static eliminator unit, as shown in (A) of Figure 7 , there is a tendency for the surface potential of the film F to increase as the conveying speed increases. In contrast, when there is a static eliminator unit, as shown in (B) of Figure 7 , the surface potential can be maintained substantially constant regardless of the conveying speed of the film F. Thus, according to the present embodiment, it is also possible to sufficiently cope with the high-speedization of the film forming speed, and it is possible to manufacture a high-quality film with a metal film at high speed and stably.

[0092] <Second Embodiment>

[0093] Figure 8 The schematic structural diagram of the vacuum processing apparatus 200 according to the second embodiment of the present invention. The vacuum processing apparatus 200 of the present embodiment is configured as a roll-to-roll vacuum evaporation apparatus in the same manner as the first embodiment. It should be noted that, in the figure, the parts corresponding to the above first embodiment are denoted by the same reference numerals, and their detailed descriptions are omitted or simplified.

[0094] The vacuum processing apparatus 200 of the present embodiment includes: a vacuum chamber 10, film forming units 20A, 20B, a film conveying unit 30, voltage supply circuits 40A, 40B, and static eliminator units 50A, 50B. The vacuum processing apparatus 200 of the present embodiment is configured to form a metal film on both sides of the film F, which is different from the first embodiment. Hereinafter, the differences from the first embodiment will be mainly described.

[0095] The conveying unit 30 includes: an unwinding roller 31, a winding roller 32, and two main rollers (first and second conveying rollers) 33A, 33B provided on the film conveying path between the unwinding roller 31 and the winding roller 32. The first main roller 33A and the second main roller 33B have the same structure as the main roller 33 described in the first embodiment, so the description thereof is omitted.

[0096] On the film conveying path between the first main roller 33A and the second main roller 33B, a first auxiliary roller 36, two guide rollers 37, 38, and a second auxiliary roller 39 are sequentially arranged. The first auxiliary roller 36 is made of metal and is arranged on the downstream side of the first main roller 33A and at a position where it contacts one main surface of the film F. The second auxiliary roller 39 is also made of metal and is arranged on the upstream side of the second main roller 33B and at a position where it contacts one main surface of the film F. In addition, the second auxiliary roller 39 may also be arranged on the downstream side of the second main roller 33B and at a position where it contacts one main surface of the film F.

[0097] The first film forming unit 20A is an evaporation source that is arranged opposite to the first main roller 33A and is used to form a metal film M1 (for example, an aluminum film) on one main surface of the film F supported on the first main roller 33A through the opening 14a of the partition 14.

[0098] The second film forming unit 20B is an evaporation source that is disposed opposite to the second main roller 33B and is configured to form a metal film M2 (such as an aluminum film) on the other main surface of the film F supported on the second main roller 33B via the opening 14b of the partition plate 14.

[0099] The first voltage supply circuit 40A has a voltage source that applies a prescribed DC voltage between the first main roller 33A and the first auxiliary roller 36. The first voltage supply circuit 40A applies a positive potential to the first auxiliary roller 36 and a negative potential (ground potential) to the first main roller 33A. Additionally, without being limited thereto, a positive potential may be applied to the first main roller 33A and a negative potential may be applied to the first auxiliary roller 36. The magnitude of the above - mentioned prescribed DC voltage during film formation is, for example, 500V.

[0100] The second voltage supply circuit 40B has a voltage source that applies a prescribed DC voltage between the second main roller 33B and the second auxiliary roller 39. The second voltage supply circuit 40B applies a positive potential to the second auxiliary roller 39 and a negative potential (ground potential) to the second main roller 33B. The magnitude of the above - mentioned prescribed DC voltage during film formation is, for example, 500V. Additionally, without being limited thereto, a positive potential may be applied to the second main roller 33B and a negative potential may be applied to the second auxiliary roller 39.

[0101] Figure 9 It is a schematic diagram of the electrostatic chuck mechanism formed between the first main roller 33A and the second main roller 33B and the film F. On the first main roller 33A, the film F is adsorbed on the support surface 333 of the first main roller 33A by the DC voltage applied between the metal film M1 formed on one main surface of the film F by the first film forming unit 20A and the base portion 331 of the first main roller 33A.

[0102] On the other hand, on the second main roller 33B, the film F is adsorbed on the support surface 333 of the second main roller 33B by the DC voltage applied between the metal film M1 formed on one main surface thereof and the base portion 331 of the second main roller 33B.

[0103] The first static eliminator unit 50A is configured to suppress the electrification of the film F generated when the film F is peeled off from the first main roller 33A or the electrification of the first main roller 33A (peeling electrification), and is configured to be able to irradiate the film F or the first main roller 33A with charged particles for static elimination. In the present embodiment, the first static eliminator unit 50A is disposed directly above the first main roller 33A and is composed of an ion irradiator that irradiates positive ions such as argon ions onto the non - film - forming surface (the other main surface) of the film F peeled off from the first main roller 33A. Without being limited thereto, the static eliminator unit 50A may also be configured to directly irradiate a part of the outer peripheral surface of the first main roller 33A without the film F wound thereon with charged particles for static elimination.

[0104] The second static eliminator unit 50B is configured to suppress the electrification of the film F or the electrification of the second main roller 33B (peeling electrification) generated when the film F is peeled from the second main roller 33B, and is configured to be able to irradiate the film F or the second main roller 33B with charged particles for static elimination. In the present embodiment, the second static eliminator unit 50B is disposed directly above the second main roller 33B and is composed of an ion irradiator that irradiates positive ions such as argon ions onto the non-film-forming surface (one main surface) of the film F peeled from the second main roller 33B. The present invention is not limited thereto, and the static eliminator unit 50B may also be configured to directly irradiate a part of the outer peripheral surface of the second main roller 33B without the film F wound thereon with charged particles for static elimination.

[0105] In the vacuum processing apparatus 200 of the present embodiment configured as described above, the same operational effects as those of the first embodiment can also be obtained. That is, the adhesion force between the film F and the support surfaces 333 of the main rollers 33A and 33B is increased, and thus it is possible to achieve both adsorption force and insulation breakdown voltage. In addition, since the adhesion force between the film F and the support surface 333 is increased, the heat transfer efficiency therebetween is also increased, and thus it is possible to suppress the thermal deformation of the film F.

[0106] In addition, in the present embodiment, on the first main roller M1, a metal film M1 is formed on one main surface of the film F, and then, on the second main roller 33B, a metal film M2 is formed on the other main surface of the film F. Thereby, it is possible to continuously form films on both sides of the film F within the same vacuum chamber 10.

[0107] The embodiments of the present invention have been described above, but the present invention is not limited to the above embodiments, and various modifications can of course be made.

[0108] For example, in the above embodiments, as the vacuum processing apparatus, a roll-to-roll vacuum evaporation apparatus has been described as an example, but it is not limited thereto, and it may also be a roll-to-roll sputtering apparatus, an etching apparatus, or the like.

[0109] In addition, in the above embodiments, a roll-to-roll vacuum processing apparatus using a long resin film as a substrate has been described as an example, but it is not limited thereto, and the present invention can also be applied to a single-sheet vacuum processing apparatus using a plate-like substrate such as a semiconductor wafer or a glass substrate as a substrate. In this case, the support body corresponds to a workbench for supporting the above plate-like substrate, and its electrostatic chuck mechanism can also adopt the present invention.

[0110] Furthermore, in the above first embodiment, a DC voltage is applied between the main roller 33 and the second auxiliary roller 35 disposed on its downstream side, but it is not limited thereto. For example, when the film F with the metal film M formed thereon is set on the unwind roller 31 and the same or another metal film is further formed on the metal film M, a DC voltage may be applied between the main roller 33 and the first auxiliary roller 34 disposed on its upstream side. In this case, the same operational effects as those of the above first embodiment can also be obtained.

[0111] Explanation of Reference Numerals

[0112] 10: Vacuum chamber

[0113] 20, 20A, 20B: Film forming unit

[0114] 30: Film conveyance unit

[0115] 31: Unwind roller

[0116] 32: Rewind roller

[0117] 33: Main roller (conveyance roller, support)

[0118] 35, 36, 39: Auxiliary rollers

[0119] 40, 40A, 40B: Voltage supply circuit

[0120] 50, 50A, 50B: Static eliminator unit

[0121] 331: Base portion

[0122] 332: Surface layer

[0123] 333: Support surface

[0124] F: Film (base material)

Claims

1. A vacuum processing apparatus, comprising: a vacuum chamber; a support having a base portion and a surface layer, the base portion being disposed within the vacuum chamber and made of a conductor, the surface layer being made of a dielectric and covering the surface of the base portion, the surface layer having a support surface for electrostatically adsorbing a substrate to be processed; and a surface processing unit configured to process the surface of the substrate adsorbed on the support surface, wherein the thickness of the surface layer is 250 μm or more and 800 μm or less, and the support length ratio of 50% or more of the cross-sectional height of the support surface is 90% or more.

2. The vacuum processing apparatus according to claim 1, wherein the thickness of the surface layer is 400 μm or more and 600 μm or less.

3. The vacuum processing apparatus according to claim 1, wherein the substrate is a long strip of film, and the support is at least one transport roller around which the substrate is wound and which transports the substrate.

4. The vacuum processing apparatus according to claim 1, wherein the substrate is a semiconductor substrate or a glass substrate, and the support is a workbench on which the substrate is placed.

5. The vacuum processing apparatus according to claim 3, wherein it further comprises a first voltage supply circuit having: an auxiliary roller disposed on the downstream side or the upstream side of the transport roller and in contact with one main surface of the substrate; and a voltage source configured to apply a DC voltage between the auxiliary roller and the transport roller, and the surface processing unit includes a first film forming unit configured to vapor-deposit a conductive material on the one main surface of the substrate.

6. The vacuum processing apparatus according to claim 3, wherein it further comprises a second voltage supply circuit having: an auxiliary roller disposed on the upstream side or the downstream side of the transport roller and in contact with one surface of the substrate on which the conductive material is formed; and a voltage source configured to apply a DC voltage between the auxiliary roller and the transport roller, and the surface processing unit includes a second film forming unit configured to vapor-deposit a conductive material on the other main surface of the substrate.

7. The vacuum processing apparatus according to claim 5 or 6, wherein it further comprises: an electrostatic elimination unit configured to irradiate the substrate or the transport roller with charged particles for eliminating static electricity of the substrate.

8. An electrostatic chuck, comprising: a base portion made of a conductor; and a surface layer made of a dielectric and covering the surface of the base portion, having a support surface for electrostatically adsorbing a substrate to be processed, wherein the thickness of the surface layer is 250 μm or more and 800 μm or less, and the support length ratio of 50% or more of the cross-sectional height of the support surface is 90% or more.

9. A transport roller, comprising: a rotatable cylindrical base portion made of a conductor; and a surface layer made of a dielectric and covering the surface of the base portion, having a support surface for electrostatically adsorbing a long strip of film to be processed, wherein the thickness of the surface layer is 250 μm or more and 800 μm or less, and the support length ratio of 50% or more of the cross-sectional height of the support surface is 90% or more.

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