Electronic component

Abstract

The invention provides an electronic component. A first main surface of the electronic component is bent at an end connected with an end surface. The second main surface faces the first main surface, and the first external electrode is disposed on the first main surface and the end surface. The plurality of internal conductors include a plurality of first internal conductors whose exposed ends are connected to the first external electrode, and an interval T1 ([mu] m) in a direction orthogonal to an imaginary plane that is in contact with the first main surface and is parallel to the second main surface is formed between the plurality of internal conductors and an internal conductor adjacent to the first main surface in the plurality of internal conductors and an interval T1 ([mu] m) in a direction orthogonal to the imaginary plane. And a distance H1 ([mu] m) between the exposed end closest to the imaginary plane among the exposed ends connected to the first external electrode and the imaginary plane in a direction orthogonal to the imaginary plane, and a radius of curvature R1 ([mu] m) at the end of the first main surface connected to the end surface satisfy the relationships H1 / 2 > T1 and R1 > T1.

Description

Technical Field

[0001] The present invention relates to an electronic component. Background Art

[0002] Known electronic components currently include a body, a plurality of external electrodes disposed on the body, and a plurality of internal conductors disposed in the body (for example, refer to Japanese Utility Model Laid-Open No. 59-138229). The body has a first main surface constituting a mounting surface, a second main surface opposite to the first main surface, and an end surface connecting the first main surface and the second main surface. The plurality of internal conductors have exposed ends exposed from the body. Summary of the Invention

[0003] In a structure in which an electronic component is soldered to an electronic device, there is a case where an external force acting on the electronic component from the electronic device acts as a stress on the body. The electronic device includes, for example, a circuit board or an electronic component. The external force acts on the body through the external electrode from the solder fillet formed during soldering installation, for example. In this case, cracks may occur in the body.

[0004] When cracks occur in the body, the cracks may reach the internal conductors. In an electronic component in which the cracks reach the internal conductors, there is a problem of characteristic deterioration.

[0005] An object of one aspect of the present invention is to provide an electronic component that can suppress deterioration of characteristics even when cracks occur in the body.

[0006] The electronic component according to one aspect of the present invention includes: a body; a plurality of external electrodes disposed on the body; and a plurality of internal conductors disposed in the body and having exposed ends exposed from the body. The body includes a first main surface constituting a mounting surface, a second main surface opposite to the first main surface, and an end surface connecting the first main surface and the second main surface. The first main surface is bent at an end connected to the end surface. The plurality of external electrodes include first external electrodes disposed on the first main surface and the end surface. The plurality of internal conductors include a plurality of first internal conductors whose exposed ends are connected to the first external electrodes. The interval T1 (μm) in the direction orthogonal to a virtual plane of an internal conductor adjacent to the first main surface among the plurality of internal conductors and the virtual plane that is in contact with the first main surface and parallel to the second main surface, the interval H1 (μm) in the direction orthogonal to the virtual plane of the exposed end closest to the virtual plane among the exposed ends connected to the first external electrodes, and the radius of curvature R1 (μm) of the end of the first main surface connected to the end surface satisfy the following relationship:

[0007] H1 / 2>T1,

[0008] R1>T1.

[0009] Through investigations and studies by the inventors of the present invention, the following matters have been clarified.

[0010] Stress acts on the substrate, for example, from the end of the first external electrode on the first main surface. In this case, a crack is generated in the substrate starting from a position corresponding to the end of the first external electrode on the first main surface. The crack, for example, starts from the above-mentioned starting point, extends toward the end face, and extends in a direction intersecting the above-mentioned imaginary plane. In a structure where the angle of the direction in which the crack extends in the substrate with respect to the above-mentioned imaginary plane is large, the crack easily reaches the internal conductor. In a structure where this angle is small, the crack does not easily reach the internal conductor.

[0011] The inventors of the present invention focused on the direction in which the crack extends in the substrate. As a result, the inventors of the present invention found that, among a plurality of internal conductors, the interval in the direction orthogonal to the imaginary plane between the internal conductor adjacent to the first main surface and the imaginary plane that is in contact with the first main surface and parallel to the second main surface, the interval in the direction orthogonal to the imaginary plane between the exposed end closest to the imaginary plane among the exposed ends connected to the first external electrode and the imaginary plane, and the radius of curvature at the end of the first main surface that is connected to the end face satisfy a desired relationship in a structure where the crack does not easily reach the internal conductor. That is, in a structure where the interval T1 (μm), the interval H1 (μm), and the radius of curvature R1 (μm) satisfy the relationship H1 / 2 > T1 and R1 > T1, the crack extending in the substrate does not easily reach the internal conductor.

[0012] Therefore, in the above-described one aspect, even when a crack is generated in the substrate, the crack does not easily reach the internal conductor. As a result, the above-described one aspect can suppress deterioration of characteristics.

[0013] In the electronic component according to the above-described one aspect, the interval H1 (μm) and the radius of curvature R1 (μm) may also satisfy the relationship H1 > R1.

[0014] Through investigation and research by the inventors of the present invention, the following matters have been clarified.

[0015] In an electronic component, the external electrode sometimes includes a base layer disposed on the substrate and a plating layer disposed on the base layer. The plating layer is formed by a plating method. In the plating method, for example, the substrate provided with the base layer is immersed in a plating solution. In this case, the plating solution sometimes penetrates into the substrate. The plating solution penetrates into the substrate, for example, from the exposed end of the internal conductor or the interface between the exposed end and the substrate. In an electronic component in which the plating solution has penetrated into the substrate, there is a problem of deterioration of characteristics.

[0016] In a structure where the first main surface is bent at the end connected to the end face, the thickness of the base layer tends to decrease at the above-mentioned end of the first main surface. In this case, the plating solution easily penetrates from the region of the base layer corresponding to the above-mentioned end of the first main surface.

[0017] The inventors of the present invention focused on the path of the plating solution intrusion. As a result, the inventors of the present invention found that in a structure where the interval in the direction orthogonal to the imaginary plane between the exposed end closest to the imaginary plane in the exposed ends connected to the first external electrode and the imaginary plane, and the radius of curvature at the end of the first main surface connected to the end face satisfy the desired relationship, the plating solution is not easily infiltrated into the element body. That is, in a structure where the interval H1 (μm) and the radius of curvature R1 (μm) satisfy the relationship H1 > R1, the plating solution is not easily infiltrated into the element body.

[0018] Therefore, a structure where the interval H1 (μm) and the radius of curvature R1 (μm) satisfy the relationship H1 > R1 can reliably suppress the deterioration of characteristics.

[0019] In the electronic component according to the above-described one aspect, the end face may also be curved at the end connected to the second main surface, and the first external electrode may also be disposed on the second main surface. The radius of curvature R1 may also be greater than the radius of curvature at the end of the end face connected to the second main surface.

[0020] In a structure where the radius of curvature R1 is greater than the radius of curvature at the end of the end face connected to the second main surface, the first main surface and the second main surface are reliably identified. Therefore, in this structure, the electronic component can be soldered and mounted on the electronic device in such a manner that the first main surface faces the electronic device reliably.

[0021] In the electronic component according to the above-described one aspect, the element body may also connect the first main surface and the second main surface and have a side surface adjacent to the end face. The plurality of external electrodes may also include second external electrodes disposed on the first main surface and the side surface. The plurality of internal conductors may also include a plurality of second internal conductors whose exposed ends are connected to the second external electrodes. It is also possible that the interval T1 (μm) and the interval H2 (μm) in the direction orthogonal to the imaginary plane between the exposed end closest to the imaginary plane among the exposed ends connected to the second external electrode and the imaginary plane satisfy the relationship H2 / 2 > T1.

[0022] Through the investigation and research of the inventors of the present invention, the following matters have been clarified.

[0023] Stress acts on the element body, for example, from the end on the first main surface of the second external electrode. In this case, cracks are generated in the element body starting from the position corresponding to the end on the first main surface of the second external electrode. The cracks, for example, start from the above-mentioned starting point, extend toward the side surface, and extend in a direction intersecting the above-mentioned imaginary plane. In a structure where the angle in the direction in which the crack extends in the element body with respect to the above-mentioned imaginary plane is large, the crack is likely to reach the internal conductor. In a structure where the angle is small, the crack is not likely to reach the internal conductor.

[0024] The inventors of the present invention focused on the direction in which cracks originating from the second external electrode extend within the substrate. As a result, the inventors of the present invention found that in a structure where the interval between the internal conductor adjacent to the first main surface and a virtual plane that is in contact with the first main surface and parallel to the second main surface, in the direction orthogonal to the virtual plane, and the interval between the exposed end closest to the virtual plane among the exposed ends connected to the second external electrode and the virtual plane, in the direction orthogonal to the virtual plane, satisfy the desired relationship, cracks originating from the second external electrode are less likely to reach the internal conductor. That is, in a structure where the intervals T1 (μm) and H2 (μm) satisfy the relationship H2 / 2 > T1, cracks originating from the second external electrode extending within the substrate are less likely to reach the internal conductor.

[0025] Therefore, in a structure where the intervals T1 (μm) and H2 (μm) satisfy the relationship H2 / 2 > T1, even when cracks originating from the second external electrode occur in the substrate, the cracks are less likely to reach the internal conductor. This structure can further suppress the degradation of characteristics.

[0026] In the electronic component according to the above-described embodiment, the first main surface may also be bent at the end connected to the side surface. The interval T1 (μm) and the radius of curvature R2 (μm) at the end of the first main surface connected to the side surface may also satisfy the relationship R2 > T1.

[0027] The inventors of the present invention found that in a structure where the interval between the internal conductor adjacent to the first main surface and a virtual plane that is in contact with the first main surface and parallel to the second main surface, in the direction orthogonal to the virtual plane, and the radius of curvature at the end of the first main surface connected to the side surface satisfy the desired relationship, cracks originating from the second external electrode are even less likely to reach the internal conductor. That is, in a structure where the intervals T1 (μm) and the radius of curvature R2 (μm) satisfy the relationship R2 > T1, cracks originating from the second external electrode extending within the substrate are even less likely to reach the internal conductor.

[0028] Therefore, in a structure where the intervals T1 (μm) and the radius of curvature R2 (μm) satisfy the relationship R2 > T1, even when cracks originating from the second external electrode occur in the substrate, the cracks are even less likely to reach the internal conductor. This structure can further suppress the degradation of characteristics.

[0029] In the electronic component according to the above-described embodiment, the interval H2 (μm) and the radius of curvature R2 (μm) may also satisfy the relationship H2 > R2.

[0030] The inventors of the present invention have also found that in a structure where the interval, in the direction orthogonal to the imaginary plane, between the exposed end connected to the second external electrode and the exposed end closest to the imaginary plane, and the radius of curvature at the end of the first major surface where it is connected to the side surface satisfy a desired relationship, the plating solution is not easily infiltrated into the substrate body. That is, in a structure where the interval H2 (μm) and the radius of curvature R2 (μm) satisfy the relationship H2 > R2, the plating solution is not easily infiltrated into the substrate body.

[0031] Therefore, a structure where the interval H2 (μm) and the radius of curvature R2 (μm) satisfy the relationship H2 > R2 can reliably suppress the deterioration of characteristics.

[0032] In the electronic component according to the above-described one embodiment, the side surface may also be bent at the end where it is connected to the second major surface, or the second external electrode may also be disposed on the second major surface. The radius of curvature R2 may also be greater than the radius of curvature at the end of the side surface where it is connected to the second major surface.

[0033] In a structure where the radius of curvature R2 is greater than the radius of curvature at the end of the side surface where it is connected to the second major surface, the first major surface and the second major surface can also be reliably identified. Therefore, in this structure, the electronic component can be soldered and mounted on the electronic device in such a manner that the first major surface faces the electronic device more reliably.

[0034] In the electronic component according to the above-described one embodiment, the interval T1 (μm) may also satisfy the relationship T1 > 45.

[0035] In the substrate body, chipping may occur during the manufacturing process. For example, when the substrate bodies collide with each other or with manufacturing equipment other than the substrate bodies, an impact is generated on the substrate bodies. When the substrate bodies are impacted, the possibility of chipping occurring in the substrate bodies increases.

[0036] The inventors of the present invention focused on the structure where chipping might occur. As a result, the inventors of the present invention found that in a structure where the interval, in the direction orthogonal to the imaginary plane, between the internal conductor adjacent to the first major surface among a plurality of internal conductors and the imaginary plane that is in contact with the first major surface and parallel to the second major surface satisfies a desired relationship, chipping is not easily generated in the substrate body. That is, in a structure where the interval T1 (μm) satisfies the relationship T1 > 45, chipping is not easily generated in the substrate body.

[0037] Therefore, a structure where the interval T1 (μm) satisfies the relationship T1 > 45 can suppress chipping from occurring in the substrate body.

[0038] In the electronic component according to the above-described one embodiment, the plurality of internal conductors may also face each other in the direction where the first major surface faces the second major surface.

[0039] In a structure where a plurality of internal conductors face each other in a direction in which a first main surface and a second main surface face each other, when a crack occurs in the base body, the characteristics are likely to deteriorate. However, as described above, even when a crack occurs in the base body, the crack is unlikely to reach the internal conductor. Therefore, in this structure, deterioration of the characteristics can also be reliably suppressed.

[0040] The present invention will be more fully understood from the following detailed description and the accompanying drawings, which should not be considered as limiting the present invention.

[0041] From the following detailed description, the further scope of application of the present invention will become clear. However, it should be understood that when describing embodiments of the present invention, only detailed descriptions and specific examples are given by way of illustration, and thus it is obvious to those skilled in the art that various changes can be made within the spirit and scope of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] Figure 1 is a perspective view of a stacked through-hole capacitor according to an embodiment.

[0043] Figure 2 is a diagram showing a cross-sectional structure of the stacked through-hole capacitor according to the present embodiment.

[0044] Figure 3 is a diagram showing a cross-sectional structure of the stacked through-hole capacitor according to the present embodiment.

[0045] Figure 4 is a diagram showing a cross-sectional structure of the stacked through-hole capacitor according to the present embodiment.

[0046] Figure 5 is a diagram showing a cross-sectional structure of the stacked through-hole capacitor according to the present embodiment.

[0047] Figure 6 is a graph showing the test results of each specimen.

[0048] Figure 7 is a graph showing the test results of each specimen.

[0049] Figure 8 is a diagram showing a cross-sectional structure of an electronic component device.

[0050] Figure 9 is a diagram showing a cross-sectional structure of an electronic component device.

[0051] Figure 10 is a diagram showing a cross-sectional structure of a stacked capacitor according to a modified example of the present embodiment. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0052] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the following description, the same reference numerals are given to the same structures or structures having the same functions, and redundant descriptions are omitted.

[0053] Referring to Figures 1 to 5 , the structure of the stacked through-capacitor C1 according to this embodiment will be described. Figure 1 FIG. is a perspective view of the stacked through-capacitor according to this embodiment. Figure 2 、 Figure 3 、 Figure 4 and Figure 5 are diagrams showing the cross-sectional structure of the stacked through-capacitor according to this embodiment. In Figure 2 、 Figure 3 、 Figure 4 and Figure 5 , the illustration of the shading indicating the cross-section is omitted.

[0054] Electronic components include, for example, the stacked through-capacitor C1.

[0055] As Figures 1 to 3 shown, the stacked through-capacitor C1 includes a body 3 and a plurality of external electrodes disposed on the body 3. The plurality of external electrodes include, for example, a pair of external electrodes 5 and a pair of external electrodes 6. The pair of external electrodes 5 and the pair of external electrodes 6 are spaced apart from each other. Each external electrode 5 is included in the signal terminal electrode, for example, and each external electrode 6 is included in the ground terminal electrode, for example. The rectangular parallelepiped shape includes the shape of a rectangular parallelepiped in which the portions corresponding to the corners and edges are respectively rounded. In the body 3, the portions corresponding to the corners and edges are respectively rounded in a curved manner. For example, in the body 3, R chamfering is performed.

[0056] The body 3 has a pair of main surfaces 3a, 3b facing each other, a pair of side surfaces 3c facing each other, and a pair of end surfaces 3e facing each other. The pair of main surfaces 3a, 3b, the pair of side surfaces 3c, and the pair of end surfaces 3e are rectangular. The direction in which the pair of main surfaces 3a, 3b face each other includes a first direction D1. The direction in which the pair of side surfaces 3c face each other includes a third direction D3. The direction in which the pair of end surfaces 3e face each other includes a second direction D2.

[0057] The stacked through-capacitor C1 is soldered and mounted on an electronic device. The electronic device includes, for example, a circuit board or electronic components. In the stacked through-capacitor C1, the main surface 3a faces the electronic device. The main surface 3a is disposed so as to constitute a mounting surface. The main surface 3a is the mounting surface. For example, when the main surface 3a includes a first main surface, the main surface 3b includes a second main surface.

[0058] The first direction D1 includes a direction orthogonal to each of the main surfaces 3a and 3b, and is orthogonal to the third direction D3. The second direction D2 includes a direction parallel to each of the main surfaces 3a and 3b and each of the side surfaces 3c, and is orthogonal to the first direction D1 and the third direction D3. The third direction D3 includes a direction orthogonal to each of the side surfaces 3c, and the second direction D2 includes a direction orthogonal to each of the end surfaces 3e.

[0059] A pair of side surfaces 3c extend in the first direction D1 in a manner connecting the pair of main surfaces 3a and 3b. The pair of side surfaces 3c also extend in the second direction D2. A pair of end surfaces 3e extend in the first direction D1 in a manner connecting the pair of main surfaces 3a and 3b. The pair of end surfaces 3e also extend in the third direction D3.

[0060] Each end surface 3e connects the main surface 3a and the main surface 3b. Each end surface 3e is adjacent to the main surface 3a, and each end surface 3e is adjacent to the main surface 3b. Each side surface 3c connects the main surface 3a and the main surface 3b. Each side surface 3c is adjacent to the main surface 3a, and each side surface 3c is adjacent to the main surface 3b. Each end surface 3e is adjacent to each side surface 3c.

[0061] As Figure 4 shown, the main surface 3a is bent at the end connected to the end surface 3e. The main surface 3a has a bent region R at the end connected to the end surface 3e 3a1 . The region R 3a1 includes a curved surface having a specified radius of curvature. The end surface 3e is bent at the end connected to the main surface 3b. The end surface 3e has a bent region R at the end connected to the main surface 3b 3e1 . The region R 3e1 includes a curved surface having a specified radius of curvature. For example, the main surface 3b is substantially a plane.

[0062] As Figure 5 shown, the main surface 3a is bent at the end connected to the side surface 3c. The main surface 3a has a bent region R at the end connected to the side surface 3c 3a2 . The region R 3a2 includes a curved surface having a specified radius of curvature. The side surface 3c is bent at the end connected to the main surface 3b. The side surface 3c has a bent region R at the end connected to the main surface 3b 3c1 . The region R 3c1 includes a curved surface having a specified radius of curvature.

[0063] For example, the length of the body 3 in the second direction D2 is greater than the length of the body 3 in the first direction D1 and greater than the length of the body 3 in the third direction D3. The second direction D2 includes the long side direction of the body 3. It is also possible that the length of the body 3 in the first direction D1 is the same as the length of the body 3 in the third direction D3. It is also possible that the length of the body 3 in the first direction D1 is different from the length of the body 3 in the third direction D3.

[0064] The length in the first direction D1 of the body 3 is the height of the body 3. The length in the third direction D3 of the body 3 is the width of the body 3. The length in the second direction D2 of the body 3 is the length of the body 3. For example, the height of the body 3 is 0.2 to 1.3 mm, the width of the body 3 is 0.5 to 1.6 mm, and the length of the body 3 is 1.0 to 3.2 mm. For example, the height of the body 3 is 0.85 mm, the width of the body 3 is 1.2 mm, and the length of the body 3 is 2.0 mm.

[0065] The body 3 is formed by laminating a plurality of dielectric layers in the first direction D1. The body 3 has a plurality of laminated dielectric layers. In the body 3, the lamination direction of the plurality of dielectric layers is the same as the first direction D1. Each dielectric layer is formed of a sintered body of a ceramic green sheet containing a dielectric material, for example. The dielectric material contains a dielectric ceramic. The dielectric ceramic contains, for example, a BaTiO3-based, Ba(Ti,Zr)O3-based, or (Ba,Ca)TiO3-based material. In an actual body 3, each dielectric layer is integrated to the extent that the boundaries between the dielectric layers are not visible.

[0066] As Figure 1 and Figure 2 shown, a pair of external electrodes 5 are respectively disposed at both ends in the second direction D2 of the body 3. Each external electrode 5 is disposed on the corresponding end face 3e of the pair of end faces 3e. For example, each external electrode 5 is disposed on a pair of main faces 3a, 3b, a pair of side faces 3c, and one end face 3e. The external electrode 5 includes a plurality of electrode portions. As Figure 4 shown, the plurality of electrode portions include an electrode portion 5a disposed on the main face 3a, an electrode portion 5b disposed on the main face 3b, and an electrode portion 5e disposed on the end face 3e. The plurality of electrode portions may also include electrode portions disposed on each side face 3c. The plurality of electrode portions may not include the electrode portion 5b. Each external electrode 5 is disposed at least on the main face 3a and the corresponding end face 3e described above.

[0067] The electrode portion 5a covers a part of the region of the main face 3a. The electrode portion 5a is in contact with the above-described part of the region of the main face 3a. The electrode portion 5a is in direct contact with the body 3. The main face 3a is covered with the electrode portion 5a in the above-described part of the region. The above-described part of the region of the main face 3a is disposed close to the end face 3e. The above-described part of the region of the main face 3a includes a bent end, that is, the region R 3a1 . The electrode portion 5a covers the region R 3a1 .

[0068] The electrode portion 5b covers a portion of the main surface 3b. The electrode portion 5b is in contact with the above-mentioned portion of the main surface 3b. The electrode portion 5b is directly in contact with the element body 3. The main surface 3b is covered by the electrode portion 5b in the above-mentioned portion of the main surface 3b. The above-mentioned portion of the main surface 3b is arranged close to the end surface 3e.

[0069] The electrode portion 5e covers the end surface 3e. The electrode portion 5e covers, for example, the entire end surface 3e. The electrode portion 5e is in contact with the end surface 3e. The electrode portion 5e is in direct contact with the element body 3. The electrode portion 5e covers a region R included in the end surface 3e. 3e1 .

[0070] like Figure 1 As shown, a pair of external electrodes 6 is arranged at the central portion of the element body 3 in the second direction D2, and is located between the pair of external electrodes 5 in the second direction D2. Figure 3 As shown in FIG. 1 , a pair of external electrodes 6 are respectively arranged on both sides of the element body 3 in the third direction D3. Each external electrode 6 is arranged on a corresponding side surface 3c in a pair of side surfaces 3c. For example, each external electrode 6 is arranged on a pair of main surfaces 3a, 3b and a side surface 3c. The external electrode 6 includes a plurality of electrode portions. The plurality of electrode portions are as shown in FIG. Figure 5 As shown in FIG. 1 , the external electrode 6 includes an electrode portion 6a disposed on the main surface 3a, an electrode portion 6b disposed on the main surface 3b, and an electrode portion 6c disposed on the side surface 3c. The plurality of electrode portions may also not include the electrode portion 6b. Each external electrode 6 is disposed at least on the main surface 3a and the corresponding side surface 3c. For example, when the external electrode 5 includes a first external electrode, the external electrode 6 includes a second external electrode.

[0071] The electrode portion 6a covers a portion of the main surface 3a. The electrode portion 6a is in contact with the above-mentioned portion of the main surface 3a. The electrode portion 6a is directly in contact with the element body 3. The main surface 3a is covered by the electrode portion 6a in the above-mentioned portion. The above-mentioned portion of the main surface 3a is arranged close to the side surface 3c. The above-mentioned portion of the main surface 3a includes a curved end, that is, the region R 3a2 The electrode portion 6a covers the region R 3a2 .

[0072] The electrode portion 6b covers a portion of the main surface 3b. The electrode portion 6b is in contact with the above-mentioned portion of the main surface 3b. The electrode portion 6b is directly in contact with the element body 3. The main surface 3b is covered by the electrode portion 6b in the above-mentioned portion of the main surface 3b. The above-mentioned portion of the main surface 3b is arranged close to the side surface 3c.

[0073] The electrode portion 6c covers a part of the side surface 3c. The electrode portion 6c is in contact with the aforesaid part of the side surface 3c. The electrode portion 6c is in direct contact with the body 3. The side surface 3c is covered by the electrode portion 6c in the aforesaid part. The aforesaid part of the side surface 3c is located approximately at the center in the second direction D2 of the side surface 3c. The aforesaid part of the side surface 3c includes a curved end, namely the region R 3c1 The electrode portion 6c covers the region R 3c1 .

[0074] A pair of external electrodes 5 are formed on five surfaces, for example, a pair of main surfaces 3a, 3b, a pair of side surfaces 3c, and one end surface 3e. A pair of external electrodes 6 are formed on three surfaces, for example, a pair of main surfaces 3a, 3b, and one side surface 3c. As Figure 4 and Figure 5 shown, each of the external electrodes 5, 6 includes, for example, a first electrode layer E1 and a second electrode layer E2. The plurality of electrode portions included in each of the external electrodes 5, 6 include, for example, a first electrode layer E1 and a second electrode layer E2

[0075] The first electrode layer E1 is formed by firing a conductive paste applied to the surface of the body 3. The first electrode layer E1 is formed by sintering the metal components (metal particles) contained in the conductive paste. The first electrode layer E1 includes a sintered metal layer. The first electrode layer E1 includes a sintered metal layer formed on the body 3. For example, the first electrode layer E1 includes a sintered metal layer formed of Cu. The first electrode layer E1 may also include a sintered metal layer formed of Ni. The first electrode layer E1 contains base metals. The conductive paste contains, for example, particles formed of Cu or Ni, a glass component, an organic binder, and an organic solvent

[0076] The second electrode layer E2 is formed on the first electrode layer E1 by a plating method. The second electrode layer E2 may also have a multilayer structure. In the structure where the second electrode layer E2 has a multilayer structure, the second electrode layer E2 includes, for example, a Ni plating layer and a solder plating layer. The Ni plating layer is formed on the first electrode layer E1. The solder plating layer is formed on the Ni plating layer. The solder plating layer covers the Ni plating layer. The Ni plating layer has excellent solder corrosion resistance compared to the metal contained in the first electrode layer E1. The second electrode layer E2 may also include a Sn plating layer, a Cu plating layer, or an Au plating layer instead of the Ni plating layer. The solder plating layer includes, for example, a Sn plating layer, a Sn-Ag alloy plating layer, a Sn-Bi alloy plating layer, or a Sn-Cu alloy plating layer. The first electrode layer E1 includes a base layer for forming the second electrode layer E2

[0077] The stacked through-capacitor C1 includes a plurality of internal conductors disposed within the body 3. The plurality of internal conductors, as Figures 2 to 5As shown, it includes a plurality of internal electrodes 7 and a plurality of internal electrodes 9. The internal electrodes 7 and the internal electrodes 9 are arranged at different positions (layers) in the first direction D1. The internal electrodes 7 and the internal electrodes 9 are opposite to each other with a gap in the first direction D1 within the body 3. The plurality of internal electrodes 7 and the plurality of internal electrodes 9 are alternately arranged in the first direction D1. The internal electrodes 7 and the internal electrodes 9 have different polarities from each other. Each of the internal electrodes 7 and 9 is located, for example, in a plane substantially parallel to the main surface 3b.

[0078] Each of the internal electrodes 7 and 9 contains a conductive material commonly used as an internal conductor of a multilayer electronic component. The conductive material contains, for example, base metals. The conductive material contains, for example, Ni or Cu. Each of the internal electrodes 7 and 9 is formed as a sintered body of a conductive paste containing the above-mentioned conductive material. In the multilayer through-hole capacitor C1, each of the internal electrodes 7 and 9 contains, for example, Ni.

[0079] The internal electrode 7 is exposed at a pair of end faces 3e. The internal electrode 7 includes a pair of ends 7e. The pair of ends 7e are respectively exposed at the corresponding end faces 3e in the pair of end faces 3e. The pair of ends 7e protrude from the body 3. Each end 7e includes an exposed end. The internal electrode 7 is not exposed at the pair of main surfaces 3a, 3b and the pair of side surfaces 3c.

[0080] The pair of ends 7e are respectively connected to the corresponding external electrodes 5 in the pair of external electrodes 5. For example, the pair of ends 7e are respectively connected to the electrode portions 5e of the corresponding external electrodes 5. The pair of ends 7e are respectively covered by the corresponding external electrodes 5 and directly connected thereto. The plurality of internal electrodes 7 are physically and electrically connected to the pair of external electrodes 5.

[0081] The internal electrode 9 is exposed at a pair of side surfaces 3c. The internal electrode 9 includes a pair of ends 9e. The pair of ends 9e are respectively exposed at the corresponding side surfaces 3c in the pair of side surfaces 3c. The pair of ends 9e protrude from the body 3. Each end 9e includes an exposed end. The internal electrode 9 is not exposed at the pair of main surfaces 3a, 3b and the pair of end faces 3e.

[0082] The pair of ends 9e are respectively connected to the corresponding external electrodes 6 in the pair of external electrodes 6. For example, the pair of ends 9e are respectively connected to the electrode portions 6c of the corresponding external electrodes 6. The pair of ends 9e are respectively covered by the corresponding external electrodes 6 and directly connected thereto. The plurality of internal electrodes 9 are physically and electrically connected to the pair of external electrodes 6. For example, when the internal electrode 7 includes a first internal electrode, the internal electrode 9 includes a second internal electrode.

[0083] In the multilayer through-hole capacitor C1, the internal electrode 9 closest to the main surface 3a among the plurality of internal electrodes 9 is adjacent to the main surface 3a. The internal electrode 9 closest to the main surface 3b among the plurality of internal electrodes 9 is adjacent to the main surface 3b. The plurality of internal electrodes 9 include a pair of outermost internal conductors that are located on the outermost sides in the first direction D1 among the plurality of internal conductors.

[0084] The plurality of internal electrodes 7 may also include a pair of outermost internal conductors among the plurality of internal conductors that are located on the outermost side in the first direction D1. In a structure where the plurality of internal electrodes 7 includes a pair of outermost internal conductors, the internal electrode 7 closest to the main surface 3a among the plurality of internal electrodes 7 is adjacent to the main surface 3a, and the internal electrode 7 closest to the main surface 3b among the plurality of internal electrodes 7 is adjacent to the main surface 3b. It is also possible that the internal electrode 7 is adjacent to the main surface 3a and the internal electrode 9 is adjacent to the main surface 3b. It is also possible that the internal electrode 9 is adjacent to the main surface 3a and the internal electrode 7 is adjacent to the main surface 3b.

[0085] Refer to Figure 4 and Figure 5 , and the structure of the stacked through-capacitor C1 will be described. As described above, the stacked through-capacitor C1 includes a body 3, a plurality of external electrodes, and a plurality of internal conductors.

[0086] As Figure 4 shown, the body 3 has a main surface 3a that forms a mounting surface, a main surface 3b opposite to the main surface 3a, and an end surface 3e that connects the main surface 3a and the main surface 3b. A plurality of external electrodes are arranged on the body 3. A plurality of internal electrodes are arranged inside the body 3 and include ends that protrude from the body 3. The main surface 3a is curved at the end connected to the end surface 3e. The plurality of external electrodes include external electrodes 5 arranged on the main surface 3a and the end surface 3e. The plurality of internal conductors include a plurality of internal electrodes 7 whose respective ends 7e are connected to the external electrodes 5. The plurality of internal conductors include an internal electrode 9 adjacent to the main surface 3a.

[0087] The interval T1 (μm), the interval H1 (μm), and the radius of curvature R1 (μm) satisfy the relationship of H1 / 2 > T1 and R1 > T1.

[0088] The interval T1 is defined by the interval between the internal electrode 9 adjacent to the main surface 3a and a virtual plane PL1 in a direction orthogonal to the virtual plane PL1. The virtual plane PL1 is in contact with the main surface 3a and is parallel to the main surface 3b. The direction orthogonal to the virtual plane PL1 includes, for example, the first direction D1. The interval H1 is defined by the interval between the end 7e closest to the virtual plane PL1 among the ends 7e connected to the external electrode 5 and the virtual plane PL1 in a direction orthogonal to the virtual plane PL1. The radius of curvature R1 is defined by the radius of curvature at the end of the main surface 3a connected to the end surface 3e. The radius of curvature R1 is defined by, for example, the radius of curvature of the region R 3a1 of the curvature radius.

[0089] The interval H1 (μm) and the radius of curvature R1 (μm) may also satisfy the relationship of H1 > R1.

[0090] The interval T1 (μm) may also satisfy the relationship of T1 > 45.

[0091] As Figure 5As shown, the base body 3 includes a side surface 3c that connects the main surface 3a and the main surface 3b and is adjacent to the end surface 3e. The plurality of external electrodes include external electrodes 6 disposed on the main surface 3a and the side surface 3c. The plurality of internal conductors include a plurality of internal electrodes 9 each having an end 9e connected to the external electrode 6. The main surface 3a is bent at the end connected to the side surface 3c. The plurality of internal conductors include internal electrodes 9 adjacent to the main surface 3a.

[0092] The interval T1 (μm) and the interval H2 (μm) may also satisfy the relationship of H2 / 2 > T1.

[0093] The interval H2 is defined by the interval in the direction orthogonal to the imaginary plane PL1 between the end 9e closest to the imaginary plane PL1 among the ends 9e connected to the external electrode 6 and the imaginary plane PL1.

[0094] The interval T1 (μm) and the radius of curvature R2 (μm) may also satisfy the relationship of R2 > T1.

[0095] The radius of curvature R2 (μm) is defined by the radius of curvature at the end of the main surface 3a where it is connected to the side surface 3c. The radius of curvature R2 is, for example, defined by the radius of curvature of the region R 3a2 of the radius of curvature.

[0096] The interval H2 (μm) and the radius of curvature R2 (μm) may also satisfy the relationship of H2 > R2.

[0097] As Figure 4 shown, the end surface 3e is bent at the end connected to the main surface 3b. The radius of curvature R1 may also be greater than the radius of curvature at the end of the end surface 3e where it is connected to the main surface 3b. The above-mentioned radius of curvature of the end surface 3e is, for example, defined by the radius of curvature of the region R 3e1 of the radius of curvature.

[0098] As Figure 5 shown, the side surface 3c is bent at the end connected to the main surface 3b. The radius of curvature R2 may also be greater than the radius of curvature at the end of the side surface 3c where it is connected to the main surface 3b. The above-mentioned radius of curvature of the side surface 3c is, for example, defined by the radius of curvature of the region R 3c1 of the radius of curvature.

[0099] The interval T1, the interval H1, and the radius of curvature R1 can be obtained, for example, as described below.

[0100] A cross-sectional photograph of the base body 3 is taken. The cross-sectional photograph is a photograph taken of the cross-section when the multilayer through-capacitor C1 is cut in a plane orthogonal to the main surface 3a and the end surface 3e. The cross-sectional photograph is, for example, a photograph taken of the cross-section of the multilayer through-capacitor C1 when it is cut in a plane parallel to and equidistant from the pair of side surfaces 3c. On the obtained cross-sectional photograph, the interval T1, the interval H1, and the radius of curvature R1 are obtained.

[0101] The interval H2 and the radius of curvature R2 can be obtained as described below, for example.

[0102] A cross-sectional photograph of the base body 3 is taken. The cross-sectional photograph is a photograph taken of the cross-section when the multilayer through-capacitor C1 is cut in a plane orthogonal to the main surface 3a and the side surface 3c. The cross-sectional photograph is, for example, a photograph taken of the cross-section of the multilayer through-capacitor C1 when it is cut in a plane parallel to and equidistant from a pair of end faces 3e. On the obtained cross-sectional photograph, the interval H2 and the radius of curvature R2 are obtained.

[0103] Next, the relationship among the interval T1, the interval H1, and the radius of curvature R1 will be described in detail.

[0104] The inventor of the present invention conducted the following tests in order to clarify the relationship among the interval T1, the interval H1, and the radius of curvature R1. In this test, the inventor of the present invention prepared specimens 1 to 13 having different intervals T1, intervals H1, and radii of curvature R1, and confirmed the changes in the characteristics of each of the specimens 1 to 13, the immersion of the plating solution, and the occurrence of chipping. Figure 6 The results are shown. Figure 6 It is a graph showing the test results of each specimen.

[0105] Each of the specimens 1 to 13 is a batch of specimens containing a plurality of test articles. The test articles of each of the specimens 1 to 13 are multilayer through-capacitors having the same structure except that the intervals T1, the intervals H1, and the radii of curvature R1 are different, and the height of the base body 3 (the length in the first direction D1 of the base body 3) and the number of a plurality of internal conductors are different. In the test articles of the specimens 1 to 13, the length of the base body 3 is 2.0 mm, and the width of the base body 3 is 1.2 mm.

[0106] In each of the test articles of specimen 1, the height of the base body 3 is 845 μm, the interval T1 is 85 μm, the interval H1 is 195 μm, and the radius of curvature R1 is 110 μm.

[0107] In each of the test articles of specimen 2, the height of the base body 3 is 845 μm, the interval T1 is 81 μm, the interval H1 is 170 μm, and the radius of curvature R1 is 150 μm.

[0108] In each of the test articles of specimen 3, the height of the base body 3 is 845 μm, the interval T1 is 85 μm, the interval H1 is 279 μm, and the radius of curvature R1 is 103 μm.

[0109] In each of the test articles of specimen 4, the height of the base body 3 is 848 μm, the interval T1 is 79 μm, the interval H1 is 175 μm, and the radius of curvature R1 is 188 μm.

[0110] In each test sample of sample 5, the height of the ferrite 3 is 850 μm, the interval T1 is 40 μm, the interval H1 is 183 μm, and the radius of curvature R1 is 70 μm.

[0111] In each test sample of sample 6, the height of the ferrite 3 is 790 μm, the interval T1 is 70 μm, the interval H1 is 191 μm, and the radius of curvature R1 is 98 μm.

[0112] In each test sample of sample 7, the height of the ferrite 3 is 850 μm, the interval T1 is 60 μm, the interval H1 is 230 μm, and the radius of curvature R1 is 100 μm.

[0113] In each test sample of sample 8, the height of the ferrite 3 is 845 μm, the interval T1 is 87 μm, the interval H1 is 106 μm, and the radius of curvature R1 is 76 μm.

[0114] In each test sample of sample 9, the height of the ferrite 3 is 838 μm, the interval T1 is 90 μm, the interval H1 is 136 μm, and the radius of curvature R1 is 67 μm.

[0115] In each test sample of sample 10, the height of the ferrite 3 is 838 μm, the interval T1 is 95 μm, the interval H1 is 111 μm, and the radius of curvature R1 is 60 μm.

[0116] In each test sample of sample 11, the height of the ferrite 3 is 855 μm, the interval T1 is 49 μm, the interval H1 is 166 μm, and the radius of curvature R1 is 69 μm.

[0117] In each test sample of sample 12, the height of the ferrite 3 is 855 μm, the interval T1 is 49 μm, the interval H1 is 166 μm, and the radius of curvature R1 is 60 μm.

[0118] In each test sample of sample 13, the height of the ferrite 3 is 845 μm, the interval T1 is 81 μm, the interval H1 is 154 μm, and the radius of curvature R1 is 105 μm.

[0119] The values of the interval T1, the interval H1, and the radius of curvature R1 were obtained from one test sample arbitrarily selected from multiple test samples in each of the samples 1 to 13 according to the above method.

[0120] The change in characteristics was confirmed as follows.

[0121] In each of the specimens 1 to 13, one specimen is arbitrarily selected from a plurality of test samples. The capacitance of the selected specimen is measured. The specimen for which the capacitance has been measured is subjected to a flexural strength test. After the flexural strength test, the capacitance of the specimen is measured again. Based on the measurement results of the capacitance, the change rate of the capacitance before and after the flexural strength test is obtained. A specimen with a capacitance change rate of less than 5% is judged that the condition of the characteristic change is "good (G)". A specimen with a capacitance change rate of 5% or more is judged that the condition of the characteristic change is "non-conforming (F)". A multilayer through-hole capacitor with a capacitance change rate of less than 5% is easier to use.

[0122] The flexural strength test is carried out as follows.

[0123] The selected specimen is soldered and mounted at the central part of a test substrate (epoxy glass substrate). The size of the test substrate is 100 mm × 40 mm, and the thickness of the test substrate is 1.0 mm. The test substrate on which the specimen is soldered and mounted is placed on two support members that are arranged in parallel with a spacing of 90 mm. The test substrate is placed in such a way that the surface on which the specimen is soldered and mounted faces downwards. Then, from the back of the surface on which the specimen is soldered and mounted, a flexural stress is applied to the central part of the test substrate so that the amount of flexure of the test substrate becomes a desired value. In this test, the amount of flexure of the test substrate is 15 mm.

[0124] The immersion and occurrence of disintegration of the plating solution are confirmed by observing the cross-section of the specimen when obtaining the respective values of the interval T1, the interval H1, and the radius of curvature R1. The immersion and occurrence of disintegration of the plating solution can also be confirmed by observing the cross-section of a specimen newly and arbitrarily selected from a plurality of specimens.

[0125] The presence or absence of the immersion of the plating solution is judged based on the presence of the plating solution at the interface between the body 3 and the external electrode 5. A specimen in which the plating solution does not exist at the above interface is judged as "good (G)". A specimen in which the plating solution exists at the above interface is judged as "non-conforming (F)". The presence or absence of the immersion of the plating solution can also be judged based on the presence or absence of the elements constituting the plating layer at the above interface.

[0126] The presence or absence of the occurrence of disintegration is based on whether there is disintegration in the region R 3a1 or the region R 3a1 nearby. A specimen without disintegration is judged as "good (G)". A specimen with disintegration is judged as "non-conforming (F)".

[0127] As Figure 6As shown, the results of the above tests confirmed that in Specimens 1 to 7, the change rate of capacitance was very low. That is, in Specimens 1 to 7, deterioration of characteristics was suppressed. In Specimens 1 to 3 and Specimens 5 to 7, intrusion of the plating solution was suppressed. In Specimens 1 to 4, Specimen 6, and Specimen 7, chipping was less likely to occur.

[0128] Next, the relationship between the interval T1, the interval H2, and the radius of curvature R2 will be described in detail.

[0129] The inventor of the present invention conducted the following tests in order to clarify the relationship between the interval T1, the interval H2, and the radius of curvature R2. In this test, the inventor of the present invention prepared Specimens 14 to 18 with different intervals T1, intervals H2, and radii of curvature R2, and confirmed changes in the characteristics of each of Specimens 14 to 18, intrusion of the plating solution, and occurrence of chipping. Figure 7 The results are shown. Figure 7 It is a graph showing the test results of each specimen.

[0130] Each of Specimens 14 to 18 is a batch of specimens containing a plurality of test articles. The test articles of each of Specimens 14 to 18 are multilayer through-hole capacitors having the same structure except that the intervals T1, intervals H1 and H2, and radii of curvature R1 and R2 are different, and the height of the body 3 and the number of a plurality of internal conductors are different. In the test articles of Specimens 14 to 18, the length of the body 3 is 2.0 mm, and the width of the body 3 is 1.2 mm.

[0131] In each test article of Specimen 14, the height of the body 3 is 845 μm, the interval T1 is 85 μm, the interval H1 is 195 μm, the radius of curvature R1 is 130 μm. The interval H2 is 221 μm, and the radius of curvature R2 is 127 μm.

[0132] In each test article of Specimen 15, the height of the body 3 is 845 μm, the interval T1 is 85 μm, the interval H1 is 185 μm, the radius of curvature R1 is 123 μm. The interval H2 is 183 μm, and the radius of curvature R2 is 120 μm.

[0133] In each test article of Specimen 16, the height of the body 3 is 846 μm, the interval T1 is 85 μm, the interval H1 is 268 μm, the radius of curvature R1 is 122 μm. The interval H2 is 268 μm, and the radius of curvature R2 is 120 μm.

[0134] In each test article of Specimen 17, the height of the body 3 is 845 μm, the interval T1 is 45 μm, the interval H1 is 195 μm, the radius of curvature R1 is 70 μm. The interval H2 is 194 μm, and the radius of curvature R2 is 70 μm.

[0135] In each test sample of the test piece 18, the height of the ferrite 3 is 845 μm, the interval T1 is 72 μm, the interval H1 is 196 μm, and the radius of curvature R1 is 218 μm. The interval H2 is 195 μm, and the radius of curvature R2 is 210 μm.

[0136] The values of the interval T1, the intervals H1 and H2, and the radii of curvature R1 and R2 were obtained from one test sample arbitrarily selected from a plurality of test samples in each of the test pieces 14 to 18 by the method described above.

[0137] The change in characteristics was confirmed as follows.

[0138] In each of the test pieces 14 to 18, the change rate of the capacitance before and after the flexural strength test was obtained in the same manner as in the test pieces 1 to 13. For a test sample with a change rate of the capacitance of less than 5%, the condition of the change in characteristics was determined to be "good (G)". For a test sample with a change rate of the capacitance of 5% or more, the condition of the change in characteristics was determined to be "non-conforming (F)".

[0139] The immersion and fragmentation of the plating solution were confirmed by observing the cross-section of the test sample when obtaining the values of the interval T1, the interval H1, and the radius of curvature R1, and by observing the cross-section of the test sample when obtaining the values of the interval H2 and the radius of curvature R2. The immersion and fragmentation of the plating solution can also be confirmed by observing the cross-section of one test sample arbitrarily selected from a plurality of test samples.

[0140] The presence or absence of the immersion of the plating solution was determined based on whether the plating solution exists at the interface between the ferrite 3 and the external electrode 5 and whether the plating solution exists at the interface between the ferrite 3 and the external electrode 6. Similar to the test pieces 1 to 13, a test sample in which the plating solution does not exist at the above interface was determined to be "good (G)". A test sample in which the plating solution exists at the above interface was determined to be "non-conforming (F)".

[0141] The presence or absence of fragmentation was based on whether fragmentation exists near the region R 3a1 or the region R 3a1 of the main surface 3a and whether fragmentation exists near the region R 3a2 or the region R 3a2 of the main surface 3a. Similar to the test pieces 1 to 13, a test sample without fragmentation was determined to be "good (G)". A test sample with fragmentation was determined to be "non-conforming (F)".

[0142] As Figure 7As shown, the results of the above tests confirmed that in Specimens 14 to 18, the rate of change of capacitance was extremely low. That is, in Specimens 14 to 18, it was confirmed that the deterioration of characteristics was suppressed. In Specimens 14 to 17, it was confirmed that the immersion of the plating solution was suppressed. In Specimen 18, the plating solution was present at the interfaces between the substrate 3 and the external electrode 5 and between the substrate 3 and the external electrode 6. In Specimens 14 to 16 and Specimen 18, it was confirmed that chipping was less likely to occur.

[0143] In the case of the stacked via capacitor C1 mounted by soldering to an electronic device, stress acts on the substrate 3, for example, from the end on the main surface 3a of the external electrode 5. In this case, a crack is generated in the substrate 3 starting from the position corresponding to the end on the main surface 3a of the external electrode 5. The crack extends, for example, from the above-mentioned starting point toward the end face 3e in a direction intersecting with the imaginary plane PL1. In a structure where the angle in the direction in which the crack extends in the substrate 3 with respect to the imaginary plane PL1 is large, the crack easily reaches the internal electrodes 7 and 9. In a structure where this angle is small, the crack is less likely to reach the internal electrodes 7 and 9.

[0144] In the stacked via capacitor C1, the intervals T1 (μm), H1 (μm), and the radius of curvature R1 (μm) satisfy the relationship of H1 / 2 > T1 and R1 > T1. Therefore, even when a crack is generated in the substrate 3, the crack is less likely to reach the internal electrodes 7 and 9. As a result, the stacked via capacitor C1 can suppress the deterioration of characteristics.

[0145] In the stacked via capacitor C1, the reason why the crack caused by the external electrode 5 is less likely to reach the internal electrodes 7 and 9 is considered to be based on the following matters.

[0146] In the stacked via capacitor C1 where the intervals T1 and the radius of curvature R1 satisfy the relationship of R1 > T1, compared with the stacked via capacitor that does not satisfy this relationship, when it is mounted by soldering, the molten solder easily flows into the space between the external electrode 5 and the pad of the electronic device. Therefore, in the stacked via capacitor C1, there is a tendency that the amount of solder flowing into the space between the external electrode 5 and the pad of the electronic device increases and the size of the soldering fillet decreases. As the size of the soldering fillet decreases, the position where the external force from the electronic device acts on the stacked via capacitor C1 tends to become lower. When the position where the external force from the electronic device acts on the stacked via capacitor C1 is low, the angle in the direction in which the crack caused by the external electrode 5 extends in the substrate 3 tends to become smaller.

[0147] In the stacked via capacitor C1 where the intervals T1 and H1 satisfy the relation H1 / 2 > T1, compared with the stacked via capacitor that does not satisfy this relation, there is a tendency for the internal electrode 7 closest to the imaginary plane PL1 among the plurality of internal electrodes to be away from the imaginary plane PL1. Therefore, even when a crack extends within the body 3, it is not easy for the crack to reach the internal electrodes 7 and 9.

[0148] In the stacked via capacitor C1, the external electrode 5 includes a first electrode layer E1 and a second electrode layer E2. The second electrode layer E2 is formed by a plating method. In the plating method, for example, the body 3 provided with the first electrode layer E1 is immersed in a plating solution. In this case, the plating solution may penetrate into the body 3. The plating solution penetrates into the body 3, for example, from the end 7e of the internal electrode 7 or from the interface between the end 7e and the body 3. In the stacked via capacitor C1 in which the plating solution has penetrated into the body 3, there is a problem of characteristic deterioration.

[0149] In the stacked via capacitor C1 where the main surface 3a is bent at the end connected to the end surface 3e, the thickness of the first electrode layer E1 has a tendency to decrease at the above-mentioned end of the main surface 3a. In this case, the plating solution easily penetrates from the region of the first electrode layer E1 corresponding to the above-mentioned end of the main surface 3a.

[0150] In a structure where the interval H1 (μm) and the radius of curvature R1 (μm) satisfy the relation H1 > R1, the plating solution is not likely to penetrate into the body 3. Therefore, the stacked via capacitor C1 having this structure can reliably suppress the deterioration of characteristics.

[0151] In a structure where the radius of curvature R1 is larger than the radius of curvature at the end of the end surface 3e connected to the main surface 3b, the main surface 3a and the main surface 3b can be reliably identified. Therefore, the stacked via capacitor C1 having this structure can be soldered and mounted to an electronic device in such a way that the main surface 3a faces the electronic device reliably.

[0152] In the stacked via capacitor C1 that has been soldered and mounted to an electronic device, stress acts on the body 3, for example, from the end on the main surface 3a of the external electrode 6. In this case, a crack is generated in the body 3 starting from the position corresponding to the end on the main surface 3a of the external electrode 6. The crack extends, for example, from the above-mentioned starting point, toward the side surface 3c, in a direction intersecting the imaginary plane PL1. In a structure where the angle of the direction in which the crack extends within the body 3 with respect to the imaginary plane PL1 is large, the crack is likely to reach the internal electrodes 7 and 9. In a structure where this angle is small, the crack is not likely to reach the internal electrodes 7 and 9.

[0153] In a structure where the interval T1 (μm) and the interval H2 (μm) satisfy the relationship H2 / 2 > T1, even when cracks occur in the body 3 due to the external electrodes 6, the cracks are less likely to reach the internal electrodes 7 and 9. Therefore, the multilayer through-capacitor C1 having this structure can further suppress the degradation of characteristics.

[0154] In the multilayer through-capacitor C1, the reason why cracks due to the external electrodes 6 are less likely to reach the internal electrodes 7 and 9 is considered to be based on the following phenomenon.

[0155] In the multilayer through-capacitor C1 where the interval T1 and the interval H2 satisfy the relationship H2 / 2 > T1, compared with the multilayer through-capacitor that does not satisfy this relationship, there is a tendency for the internal electrode 9, which is the closest to the imaginary plane PL1 among the multiple internal electrodes, to be farther away from the imaginary plane PL1. Therefore, even when the crack extends in the body 3, the crack is less likely to reach the internal electrodes 7 and 9.

[0156] In a structure where the interval T1 (μm) and the radius of curvature R2 (μm) satisfy the relationship R2 > T1, even when cracks occur in the body 3 due to the external electrodes 6, the cracks are even less likely to reach the internal electrodes 7 and 9. The multilayer through-capacitor C1 having this structure can further suppress the degradation of characteristics.

[0157] In the multilayer through-capacitor C1, the reason why cracks due to the external electrodes 6 are less likely to reach the internal electrodes 7 and 9 is also considered to be based on the following phenomenon.

[0158] In the multilayer through-capacitor C1 where the interval T1 and the radius of curvature R2 satisfy the relationship R2 > T1, compared with the multilayer through-capacitor that does not satisfy this relationship, when it is welded and mounted, the melted solder easily flows into the space between the external electrode 6 and the pad electrode of the electronic device. Therefore, in the multilayer through-capacitor C1, there is a tendency for the amount of solder flowing into the space between the external electrode 6 and the pad electrode of the electronic device to increase, and the size of the welding fillet to decrease. As the size of the welding fillet decreases, the position where the external force from the electronic device acts on the multilayer through-capacitor C1 tends to be lower. When the position where the external force from the electronic device acts on the multilayer through-capacitor C1 is low, the angle of the direction in which the crack due to the external electrode 6 extends in the body 3 tends to become smaller.

[0159] In the stacked through-hole capacitor C1, the external electrode 6 includes a first electrode layer E1 and a second electrode layer E2. The second electrode layer E2 is formed by a plating method. In the plating method, for example, the body 3 having the first electrode layer E1 is immersed in a plating solution. In this case, the plating solution may penetrate into the body 3. The plating solution penetrates into the body 3, for example, from the end 9e of the internal electrode 9 or from the interface between the end 9e and the body 3. In the stacked through-hole capacitor C1 in which the plating solution has penetrated into the body 3, there is a problem of characteristic degradation.

[0160] In the stacked through-hole capacitor C1 in which the main surface 3a is bent at the end connected to the side surface 3c, the thickness of the first electrode layer E1 tends to decrease at the above-mentioned end of the main surface 3a. In this case, the plating solution easily penetrates from the region of the first electrode layer E1 corresponding to the above-mentioned end of the main surface 3a.

[0161] In a structure where the interval H2 (μm) and the radius of curvature R2 (μm) satisfy the relationship H2 > R2, the plating solution does not easily penetrate into the body 3. Therefore, the stacked through-hole capacitor C1 having this structure can reliably suppress the degradation of characteristics.

[0162] In a structure where the radius of curvature R2 is larger than the radius of curvature at the end where the side surface 3c is connected to the main surface 3b, the main surface 3a and the main surface 3b can be reliably identified. Therefore, the stacked through-hole capacitor C1 having this structure can be soldered and mounted to an electronic device in such a manner that the main surface 3a faces the electronic device more reliably.

[0163] In the body 3, there are cases where chipping occurs during the manufacturing process. For example, when the bodies 3 collide with each other or when the body 3 collides with manufacturing equipment other than the body 3, an impact is applied to the body 3. When the body 3 is impacted, the possibility of chipping occurring in the body 3 increases.

[0164] A structure where the interval T1 (μm) satisfies the relationship T1 > 45 can suppress chipping in the body 3.

[0165] In a structure where the plurality of internal electrodes 7 and 9 face each other in the direction in which the main surface 3a and the main surface 3b face each other, when a crack occurs in the body 3, the characteristics tend to deteriorate. However, as described above, even when a crack occurs in the body 3, the crack does not easily reach the internal electrodes 7 and 9. Therefore, in the stacked through-hole capacitor C1 having this structure, the degradation of characteristics can also be reliably suppressed.

[0166] Next, with reference to Figure 8 and Figure 9 , the structure of the electronic component device will be described. Figure 8 and Figure 9 are diagrams showing the cross-sectional structure of the electronic component device. In Figure 8 and Figure 9The illustration of the cross-section shaded area is omitted.

[0167] The electronic component device includes a stacked via capacitor C1 and an electronic device ED. The electronic device ED is, for example, a circuit board or other electronic components. The stacked via capacitor C1 is soldered and mounted on the electronic device ED. The electronic device ED includes a main surface EDa, a pair of pad electrodes PE1, and a pair of pad electrodes PE2. Each of the pad electrodes PE1 and PE2 is disposed on the main surface EDa. The pair of pad electrodes PE1 and the pair of pad electrodes PE2 are spaced apart from each other. The stacked via capacitor C1 is disposed on the electronic device ED such that the main surface 3a faces the main surface EDa.

[0168] When the stacked via capacitor C1 is soldered and mounted, the melted solder wets each of the external electrodes 5 and 6 (the second electrode layer E2). Due to the solidification of the wet solder, solder fillets SF are formed on each of the external electrodes 5 and 6. The mutually corresponding external electrode 5 and the pad electrode PE1 are connected by the solder fillet SF. The mutually corresponding external electrode 6 and the pad electrode PE2 are connected by the solder fillet SF.

[0169] It should be understood that not all aspects, advantages, and features described herein can be achieved by any one particular example, nor are they necessarily included in any one particular example. In fact, after describing and illustrating various examples herein, modifications can obviously be made to the arrangements and details of other examples.

[0170] In the above-described embodiment, the stacked via capacitor is taken as an example of the electronic component, but the applicable electronic components are not limited to the stacked via capacitor. The electronic component may also replace the stacked via capacitor and include, for example, a commonly used multilayer capacitor.

[0171] Refer to Figure 10 , and describe the structure of the multilayer capacitor C2. Figure 10 is a diagram showing a cross-sectional structure of a multilayer capacitor according to a modified example of the present embodiment. In Figure 10 The illustration of the cross-section shaded area is omitted.

[0172] As Figure 10 shown, the multilayer capacitor C2 includes a body 3, a pair of external electrodes 5 and 6, a plurality of internal electrodes 7, and a plurality of internal electrodes 9. The pair of external electrodes 5 and 6 are respectively disposed at two ends in the second direction D2 of the body 3. The external electrode 5 is disposed on one of the pair of end faces 3e. The external electrode 6 is disposed on the other of the pair of end faces 3e.

[0173] A plurality of internal electrodes 7 are exposed at one end face 3e. Each internal electrode 7 has an end 7e exposed at one end face 3e. The plurality of internal electrodes 7 are not exposed at the other end face 3e. The plurality of internal electrodes 7 are physically and electrically connected to the external electrode 5. A plurality of internal electrodes 9 are exposed at the other end face 3e. Each internal electrode 9 has an end 9e exposed at the other end face 3e. The plurality of internal electrodes 9 are not exposed at one end face 3e. The plurality of internal electrodes 9 are physically and electrically connected to the external electrode 6.

[0174] As can be understood from the test results in Samples 1 to 7, the multilayer capacitor C2 can also suppress deterioration of characteristics.

[0175] The electronic component may also replace the multilayer capacitor C2 and include a multilayer capacitor including a body 3, a pair of external electrodes respectively disposed at two ends in the third direction D3 of the body 3, and a plurality of internal electrodes respectively connected to the corresponding external electrodes in the pair of external electrodes. The electronic component may also be, other than the multilayer capacitor, for example, a multilayer inductor, a multilayer varistor, a multilayer piezoelectric actuator, a multilayer thermistor, a multilayer solid battery component, or a multilayer composite component, or an electronic component other than the multilayer electronic component.

Claims

1. An electronic component, characterized in that, Comprising: A body having a first main surface constituting a mounting surface, a second main surface opposite to the first main surface, and an end surface connecting the first main surface and the second main surface; A plurality of external electrodes disposed on the body; And A plurality of internal conductors disposed within the body and having exposed ends exposed from the body, The first main surface is bent at the end connected to the end surface, The plurality of external electrodes include a first external electrode disposed on the first main surface and the end surface, The plurality of internal conductors include a plurality of first internal conductors in which the exposed ends are connected to the first external electrodes, The interval T1 between the internal conductor adjacent to the first main surface and the imaginary plane that is tangent to the first main surface and parallel to the second main surface in the direction orthogonal to the imaginary plane, the interval H1 between the exposed end closest to the imaginary plane among the exposed ends connected to the first external electrode and the imaginary plane in the direction orthogonal to the imaginary plane, and the radius of curvature R1 at the end of the first main surface connected to the end surface satisfy the following relationship: H1 / 2 > T1, R1 > T1, wherein the units of T1, H1, and R1 are μm.

2. The electronic component according to claim 1, characterized in that: The interval H1 and the radius of curvature R1 satisfy the relationship H1 > R1.

3. The electronic component according to claim 1 or 2, characterized in that: The end surface is bent at the end connected to the second main surface, The first external electrode is also disposed on the second main surface, The radius of curvature R1 is greater than the radius of curvature at the end of the end surface connected to the second main surface.

4. The electronic component according to any one of claims 1 to 3, characterized in that: The body has a side surface connecting the first main surface and the second main surface and adjacent to the end surface, The plurality of external electrodes include a second external electrode disposed on the first main surface and the side surface, The plurality of internal conductors include a plurality of second internal conductors in which the exposed ends are connected to the second external electrodes, The interval T1 and the interval H2 between the exposed end closest to the imaginary plane among the exposed ends connected to the second external electrode and the imaginary plane in the direction orthogonal to the imaginary plane satisfy the relationship H2 / 2 > T1, wherein the unit of H2 is μm.

5. The electronic component according to claim 4, characterized in that: The first main surface is bent at the end connected to the side surface, The interval T1 and the radius of curvature R2 at the end of the first main surface connected to the side surface satisfy the relationship R2 > T1, wherein the unit of R2 is μm.

6. The electronic component according to claim 5, characterized in that: The interval H2 and the radius of curvature R2 satisfy the relationship H2 > R2.

7. The electronic component according to claim 5 or 6, characterized in that: The side surface is bent at the end connected to the second main surface, The second external electrode is also disposed on the second main surface, The radius of curvature R2 is greater than the radius of curvature at the end of the side surface that is connected to the second main surface.

8. The electronic component according to any one of claims 1 to 7, characterized in that: The interval T1 satisfies the relationship T1 > 45.

9. The electronic component according to any one of claims 1 to 8, characterized in that: The plurality of internal conductors face each other in the direction in which the first main surface faces the second main surface.

10. An electronic component device, characterized in that, Comprising: The electronic component according to any one of claims 1 to 9; and An electronic device for soldering and mounting the electronic component, The first main surface faces the electronic device.

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