Semiconductor heating device capable of adjusting temperature in partitioned mode

Abstract

The invention provides a semiconductor heating device capable of adjusting temperature in a partitioned manner, and the device comprises a heating and cooling module which comprises a heating unit and a heat preservation unit sleeving the heating unit; the heating unit and the heat preservation unit are fixedly arranged; the heat preservation unit is of a hollow structure, and N isolation rings distributed in the height direction are arranged in the heat preservation unit; the heating unit and any two isolating rings define an annular air channel for cooling, a small cooling air hole communicated with the annular air channel is formed in the heating unit, and the heating unit is hollow; the air cooling units correspond to the annular air channels, are used for cooling the interior of the heating unit and are fixedly arranged, the input ends of the air cooling units are located outside the heat preservation unit, and the output ends of the air cooling units are connected with the corresponding annular air channels; and the cooling gas outlet is formed in the heat preservation unit and is communicated with the internal space of the heat preservation unit. According to the invention, the quality of batch wafers is basically consistent.

Description

Technical Field

[0001] The present invention belongs to the technical field of wafer manufacturing process equipment in the semiconductor field, and particularly relates to a semiconductor heating device with temperature adjustable in zones. Background Art

[0002] In the production of integrated circuits, chemical vapor deposition technology is widely used to deposit various semiconductor single crystal epitaxial films, polysilicon films, semi-insulating oxygen-doped polysilicon films, insulating silicon dioxide, silicon nitride, phosphosilicate glass, and metal films, etc. Chemical vapor deposition is a process in which gaseous substances undergo chemical reactions on the surface of a solid to produce solid deposits. Generally, it includes four steps: diffusion of reaction gases to the material surface, adsorption of reaction gases on the material surface, chemical reactions occurring on the material surface, and gaseous by-products detaching from the material surface. During chemical vapor deposition, specific properties of the film can be obtained by selecting appropriate parameters such as temperature, gas composition, concentration distribution, pressure, etc.

[0003] However, although multi-chip deposition equipment technology is adopted in the prior art to achieve film deposition, the film deposition quality is inconsistent due to the large temperature difference in each heating zone, and it cannot meet the requirements of customers for mass production of wafers. Summary of the Invention

[0004] The purpose of the present invention is to provide a semiconductor heating device with temperature adjustable in zones, so that the quality of batch wafers is basically the same. The technical solution adopted is as follows: A semiconductor heating device with temperature adjustable in zones, comprising: A heating and cooling module 1, the heating and cooling module 1 includes a heating unit 101 and a heat preservation unit 103 sleeved outside the heating unit 101; The heat preservation unit 103 is of a hollow structure, and N isolation rings are arranged inside it along the height direction; The heating unit 101 forms a cooling annular air duct between it and any two isolation rings, and cooling gas small holes 112 communicating with the annular air duct are opened thereon, and its interior is hollow; A plurality of air cooling units are arranged corresponding to the annular air duct, which are used to cool the interior of the heating unit 101, are fixedly arranged, the input ends thereof are located outside the heat preservation unit 103, and the output ends thereof are connected to the corresponding annular air duct; And a cooling gas outlet 113, which is arranged on the heat preservation unit 103 and communicates with the internal space of the heat preservation unit 103.

[0005] Preferably, the air cooling unit includes: An air inlet pipe, forming the input end of the air cooling unit; At least one first pipe, distributed along the height direction, and each first pipe is connected to the output end of the air inlet pipe and the input end of the second pipe; The second tube is correspondingly arranged with the first tube and forms the output end of the air cooling unit; The intake pipe and the first tube are located outside the heat preservation unit 103, and the second tube extends from outside the heat preservation unit 103 into the corresponding annular air duct; the second tube is arranged on the inner wall or the outer wall of the heat preservation unit 103; The intake pipes of adjacent air cooling units are all connected to form an intake pipe assembly, and the input end of the intake pipe assembly is connected to a third tube for introducing cooling gas.

[0006] Preferably, an intake switch valve is arranged on the third tube, and a regulating valve is arranged on the second tube.

[0007] Preferably, the heating unit 101 includes a plurality of annular heating bodies 104 distributed along the height direction; all the heating bodies 104 surrounded by each annular air duct form the heat source of a heating zone.

[0008] Preferably, for all the heating bodies 104 in one heating zone, one end of each of them passes through the annular air duct and the heat preservation unit 103 and extends to the first joint on the heat preservation unit 103, and the other end of each of them passes through the annular air duct and the heat preservation unit 103 and extends to the second joint on the heat preservation unit 103; one first joint and one second joint are configured for each heating zone.

[0009] Preferably, the heat preservation unit 103 further includes: A housing; An outer heat preservation layer 1021, which is arranged on the inner wall of the housing and forms the raised isolation ring.

[0010] Preferably, the heating unit 101 includes an inner heat preservation layer 1022.

[0011] Preferably, each annular air duct corresponds to a temperature sensor unit, and the temperature sensor in the temperature sensor unit is fixed to the heat preservation layer 103 and sequentially penetrates through the heat preservation layer 103, the annular air duct, and the heating unit 101 inward and extends into the internal space of the heating unit 101.

[0012] Preferably, a water cooling unit 102 is further arranged on the outer wall of the heat preservation unit 103, and the water cooling unit 102 includes a plurality of water cooling pipes connected in series, and the water cooling pipe assembly formed by connecting in series surrounds the heat preservation unit 103; the input end of the air cooling unit is located between two adjacent water cooling pipes.

[0013] Compared with the prior art, the advantages of the present invention are: 1. During the process, multiple heating zones are heated independently, so that the temperatures in each heating zone are basically the same, thereby ensuring that the film deposition quality in the process is consistent and ensuring that the wafer quality is consistent.

[0014] 2. Each heating zone is independently equipped with a cooling zone. After the process is completed, each cooling zone independently controls the temperature of the corresponding heating zone, so that the temperatures of all heating zones are basically the same, ensuring that the changes in the film due to temperature after the process are consistent, and further ensuring the consistency of the wafer quality. Description of the Drawings

[0015] Figure 1 It is a cross-sectional view of a semiconductor heating device with temperature adjustable in zones; Figure 2 It is a side view of a semiconductor heating device with temperature adjustable in zones; Figures 3 - 4 It is for Figure 2 the cross-sectional view of; Figure 5 It is a schematic diagram of the installation method of the heating unit.

[0016] Wherein, 1 - heating and cooling module, 101 - heating unit, 102 - water cooling unit, 103 - heat preservation unit, 104 - heating body, 105 - temperature sensor unit, 106 - internal temperature sensor; 201 - inner tube of the reaction chamber, 202 - outer tube of the reaction chamber, 203 - wafer; 301 - gas distribution pipe, 302 - wafer support frame; 401 - upper heat preservation ring, 402 - lower heat preservation ring, 501 - upper sealing ring, 502 - lower sealing ring, 503 - intake flange, 504 - bottom sealing flange; 111a - upper cooling zone intake pipe, 111b - lower cooling zone intake pipe, 111c - upper intake switch valve, 111d - lower intake switch valve, 111e - intake flow regulating valve; 1011 - first heating zone, 1012 - second heating zone, 1013 - third heating zone, 1014 - fourth heating zone, 1015 - fifth heating zone, 1016 - sixth heating zone, 1017 - seventh heating zone; 1111 - first cooling zone, 1112 - second cooling zone, 1113 - third cooling zone, 1114 - fourth cooling zone, 1115 - fifth cooling zone, 1116 - sixth cooling zone; 113 - cooling gas outlet; 1021 - outer heat preservation layer, 1022 - inner heat preservation layer; 105a - first temperature sensor, 105b - second temperature sensor; 112 - cooling gas small holes. Detailed Embodiment

[0017] The semiconductor heating device with partition-adjustable temperature of the present invention will be described in more detail below in conjunction with the schematic diagrams, in which the preferred embodiments of the present invention are shown. It should be understood that those skilled in the art can modify the present invention described herein while still achieving the advantageous effects of the present invention. Therefore, the following description should be understood as broad knowledge for those skilled in the art and not as a limitation on the present invention.

[0018] As Figure 1 shown, it is known from the prior art that semiconductor process equipment includes: a heating and cooling module 1, an inner reaction chamber tube 201 and an outer reaction chamber tube 202, an intake flange 503, a bottom sealing flange 504, and a wafer support 302.

[0019] The inner reaction chamber tube 201, the outer reaction chamber tube 202, the intake flange module 503, the bottom sealing flange 504, the upper sealing ring 501, and the lower sealing ring 502 form a sealed reaction area.

[0020] The inner reaction chamber tube 201 and the outer reaction chamber tube 202 can be made of high-purity transparent quartz. The heating and cooling module 1 can radiate heat energy through the inner reaction chamber tube 201 and the outer reaction chamber tube 202, so as to enable the process area inside the inner reaction chamber tube 201 to obtain a stable reaction temperature.

[0021] The outer reaction chamber tube 202 is used to discharge the impurity gas in the inner reaction chamber tube 201. The outer reaction chamber tube 202 is sleeved on the inner reaction chamber tube 201, and its lower end face is detachably arranged on the outer wall of the intake flange 503. Specifically, the outer reaction chamber tube 202 is placed on the intake flange 503, and the outer reaction chamber tube 202 is pressed by a fixed pressure ring, and the fixed pressure ring is connected to the outer wall of the intake flange 503 through a plurality of bolts. A gas distribution pipe 301 is arranged on the intake flange 503.

[0022] The inner reaction chamber tube 201 has square openings of different sizes on its tube body; the outer reaction chamber tube 202 is closed at the top and open at the bottom, and there is an exhaust pipe on one side, through which the gas inside the reaction chamber can be discharged.

[0023] The wafer 203 is placed on the wafer support 302 to realize the process production of different numbers of wafers 203 in the same reaction chamber, so as to realize the large-scale and high-capacity production of wafers 203.

[0024] The heat preservation unit 103 covers the upper section of the outer reaction chamber tube 202. An upper heat preservation ring 401 and a lower heat preservation ring 402 are arranged on the outer wall of the lower section of the outer reaction chamber tube 202.

[0025] The heating unit 101 can radiate heat energy through the inner tube 201 and the outer tube 202 of the reaction chamber, so as to enable the reaction area inside the inner tube 201 of the reaction chamber to obtain a stable reaction temperature. The heating unit 101 is fixed to the inner wall of the heat preservation unit 103 through a connecting piece, as Figure 5 shown.

[0026] As Figures 2 - 4 , the heating and cooling module 1 is further improved as follows: The heating and cooling module 1 includes a heating unit 101 and a heat preservation unit 103 sleeved outside the heating unit 101; Both the heating unit 101 and the heat preservation unit 103 are fixedly arranged.

[0027] The heat preservation unit 103 is a hollow structure, and N convex isolation rings are arranged inside it along the height direction; The heating unit 101 forms a cooling annular air duct between it and any two isolation rings, and cooling gas small holes 112 communicating with the annular air duct are opened on it, and its inside is hollow; A plurality of air cooling units are arranged corresponding to the annular air duct, which are used to cool the inside of the heating unit 101, are fixedly arranged, have their input ends outside the heat preservation unit 103, and their output ends are connected to the corresponding annular air duct; And a cooling gas outlet 113 is arranged on the heat preservation unit 103 and communicates with the internal space of the heat preservation unit 103.

[0028] Specifically, the air cooling unit includes: An air inlet pipe, which forms the input end of the air cooling unit; At least one first pipe, which is distributed along the height direction, and each first pipe is connected to the output end of the air inlet pipe and the input end of the second pipe; The second pipe is arranged corresponding to the first pipe, and it forms the output end of the air cooling unit; The air inlet pipe and the first pipe are located outside the heat preservation unit 103, and the second pipe extends from the outside of the heat preservation unit 103 into the corresponding annular air duct; the second pipe is fixed to the inner wall or the outer wall of the heat preservation unit 103.

[0029] The air inlet pipes of adjacent air cooling units are all connected to form an air inlet pipe assembly, and the air inlet pipe assembly is connected to a third pipe for introducing cooling gas.

[0030] An air inlet switch valve is arranged on the third pipe, and a regulating valve is arranged on the second pipe.

[0031] In this embodiment, the second pipe passes through the installation hole opened on the sheet metal part, and the sheet metal part is fixed to the outer wall of the shell of the heat preservation unit 103.

[0032] Specifically, there are two intake pipe assemblies, namely the cooling zone intake pipe 111a and the lower cooling zone intake pipe 111b. An upper intake switch valve 111c and a lower intake switch valve 111d are respectively installed on them. When the upper intake switch valve 111c and the lower intake switch valve 111d are opened, the cooling gas can pass through the upper cooling zone intake pipe 111a and the lower cooling zone intake pipe 111b, and enter the cooling (six cooling zones) zone inside the heating and cooling module 1 through the intake flow regulating valve 111e for heat exchange to achieve rapid cooling.

[0033] There are six air cooling units and six annular air channels. After introducing the cooling gas, one annular air channel forms a cooling zone, including the first cooling zone 1111, the second cooling zone 1112, the third cooling zone 1113, the fourth cooling zone 1114, the fifth cooling zone 1115, and the sixth cooling zone 1116.

[0034] The cooling gas passes through each annular air channel and then enters the external space of the reaction chamber outer tube 202 through the cooling gas small holes 112. The number of cooling gas small holes 112 on each heating zone varies, ranging from 5 to 30.

[0035] The first cooling zone 1111 includes an intake flow regulating valve 111e and a second pipe. The second cooling zone 1112, the third cooling zone 1113, the fourth cooling zone 1114, and the fifth cooling zone 1115 each include two intake flow regulating valves 111e and two second pipes. The sixth cooling zone 1116 includes an intake flow regulating valve 111e and a second pipe. The number of the intake flow regulating valve 111e and the second pipe is related to the cooling area of each annular air channel.

[0036] There are seven heating zones, including the first heating zone 1011, the second heating zone 1012, the third heating zone 1013, the fourth heating zone 1014, the fifth heating zone 1015, the sixth heating zone 1016, and the seventh heating zone 1017.

[0037] The first six heating zones are the main heating zones, and the seventh heating zone is the top temperature compensation area. As Figure 3 shown, the heating source of the seventh heating zone 1017 is set at the top of the heating unit 101, which is also an annular heating body.

[0038] Each heating zone corresponds to a temperature sensor unit. The temperature sensor in the temperature sensor unit is fixed to the heat insulation layer 103 and sequentially passes through the heat insulation layer 103, the annular air channel, and the heating unit 101 inward, extending to the internal space of the heating unit 101.

[0039] Specifically, the temperature sensor unit 105 includes two temperature sensors, namely the first temperature sensor 105a and the second temperature sensor 105b. The first temperature sensor 105a is used for temperature control, and its signal is input into the temperature controller; the second temperature sensor 105b is used for high-temperature alarm monitoring. When the first temperature sensor 105a is abnormal, the second temperature sensor 105b can be used to monitor the abnormal temperature and feedback it to the temperature controller, and the temperature controller will send out an alarm signal.

[0040] The internal temperature sensor 106 measures the real-time temperature at different points inside the reaction chamber, and the temperature sensor unit 105 measures the real-time temperature in different heating areas of the heating unit 101. The temperature control system will adjust the heating power of different heating areas of the heating unit 101 of the heating and cooling module 1 in real time according to the difference between the real-time temperature of the internal temperature sensor 106 and the real-time temperature of the temperature sensor unit 105, so as to reach the target temperature of the process.

[0041] The heating unit 101 includes a number of annular heating elements 104 distributed along the height direction. The heating element 104 is made of a heating alloy, such as FeCrAl alloy, WuRe alloy, etc. Specifically, it can be in the form of filaments, sheets or spirals. Such alloys can be used for a long time in an oxygen-containing atmosphere; all the heating elements 104 surrounded by each annular air duct form the heat source of a heating zone.

[0042] As Figure 5 shown, an inner heat insulation layer 1022 is provided on the outer wall of the heating unit 101, and the heating element 104 is embedded on its inner wall.

[0043] The more heating zones there are, the better the temperature uniformity of the heating area, but the structure and control are more complex. In actual application, the appropriate number of heating zones can be selected according to the process requirements.

[0044] For all the heating elements 104 in one heating zone, one end of each of them passes through the annular air duct and the heat insulation unit 103 and extends to the first connector on the heat insulation unit 103, and the other end of each of them passes through the annular air duct and the heat insulation unit 103 and extends to the second connector on the heat insulation unit 103; each heating zone is configured with one first connector and one second connector, both of which are connected to an external power supply.

[0045] As Figure 4 shown, only the first connector on one heating zone is shown.

[0046] The heating unit 101 includes an inner heat insulation layer 1022.

[0047] The heat insulation unit 103 further includes: a housing; an outer heat insulation layer 1021, which is provided on the inner wall of the housing and forms an isolation ring.

[0048] The external thermal insulation layer 1021 and the internal thermal insulation layer 1022 can effectively reduce heat loss, improve heating efficiency, and reduce heating energy consumption.

[0049] A water cooling unit 102 is further provided on the outer wall of the insulation unit 103. The water cooling unit 102 includes a plurality of water cooling pipes connected in series and extending along the height direction. The assembled water cooling pipes formed by series connection surround the insulation unit 103. The air inlet pipe assembly is located between two adjacent water cooling pipes. Further, the air cooling unit is located between two adjacent water cooling pipes to avoid interference with the water cooling pipes.

[0050] The water cooling unit 102 can be divided into different cooling zones according to the design. Different temperature cooling media will flow through each cooling zone. The flow rate of the cooling media in each cooling zone can be set individually according to the process requirements, so as to achieve precise temperature control of the heating unit 101, and the temperature control accuracy can reach ±0.5°C.

[0051] In summary, the advantages of the present invention are as follows: 1. It is a large-batch multi-wafer vertical equipment, capable of realizing batch production of 150 - 200 wafers, which can greatly improve the wafer production capacity and save customer resources.

[0052] 2. It includes seven heating zones, and multi-zone heating ensures uniform and controllable temperature of batch wafers.

[0053] 3. It contains six cooling zones, which can achieve rapid cooling of the heating module. Each cooling zone is equipped with an air intake flow regulating valve, which can cooperate with the control algorithm to achieve precise temperature control of the wafer heating temperature.

[0054] The air intake flow regulating valve can adjust the amount of the cooling medium. When the wafer temperature needs to be cooled at a certain speed during the process, the host computer program can automatically open the flow regulating valve. At the beginning of cooling, the flow regulating valve is at a large opening. When the temperature gradually approaches the target temperature, the flow regulating valve is at a small opening, and the temperature will gradually stabilize.

[0055] 4. Each cooling zone is provided with cooling air intake small holes 112. The number of the small holes is related to the air intake flow rate, and the flow rate will affect the cooling speed of each heating zone.

[0056] 5. Each heating zone includes two temperature sensors to achieve temperature control and over-temperature alarm.

[0057] The above are only the preferred embodiments of the present invention, and do not impose any limitation on the present invention. Any person skilled in the art, without departing from the technical solution of the present invention, makes any form of equivalent replacement or modification and other changes to the technical solution and technical content disclosed by the present invention, all of which fall within the scope of the technical solution of the present invention and are still within the protection scope of the present invention.

Claims

1. A semiconductor heating device with partitionable temperature adjustment, characterized in that, Comprising: A heating and cooling module (1), the heating and cooling module (1) comprising a heating unit (101) and a heat preservation unit (103) sleeved outside the heating unit (101); The heat preservation unit (103) is of a hollow structure, and N isolation rings distributed along the height direction are arranged inside it; The heating unit (101), an annular air duct for cooling is formed between it and any two isolation rings, cooling gas small holes (112) communicating with the annular air duct are opened thereon, and its interior is hollow; A plurality of air cooling units, which are arranged corresponding to the annular air duct, are used for cooling the interior of the heating unit (101), are fixedly arranged, have their input ends outside the heat preservation unit (103), and their output ends are connected to the corresponding annular air duct; And a cooling gas outlet (113), which is arranged on the heat preservation unit (103) and communicates with the internal space of the heat preservation unit (103).

2. The semiconductor heating device capable of adjusting temperature in partitions according to claim 1, wherein The air cooling unit comprises: An intake pipe, forming the input end of the air cooling unit; At least one first pipe, distributed along the height direction, and each first pipe is connected to the output end of the intake pipe and the input end of the second pipe; The second pipe, which is arranged corresponding to the first pipe, forms the output end of the air cooling unit; The intake pipe and the first pipe are located outside the heat preservation unit (103), and the second pipe extends from outside the heat preservation unit (103) into the corresponding annular air duct; the second pipe is arranged on the inner wall or the outer wall of the heat preservation unit (103); The intake pipes of adjacent air cooling units are all communicated to form an intake pipe assembly, and the input end of the intake pipe assembly is communicated with a third pipe for introducing cooling gas.

3. The semiconductor heating device capable of partitioned temperature adjustment according to claim 2, characterized in that, An intake switch valve is arranged on the third pipe, and a regulating valve is arranged on the second pipe.

4. The semiconductor heating device capable of adjusting temperature in zones according to claim 2, wherein, The heating unit (101) comprises a plurality of annular heating elements (104) distributed along the height direction; all the heating elements (104) surrounded by each annular air duct form the heat source of a heating zone.

5. The semiconductor heating device capable of partitioned temperature adjustment according to claim 4, characterized in that, One end of all the heating elements (104) in one heating zone all pass through the annular air duct and the heat preservation unit (103) and extend to a first joint on the heat preservation unit (103), and the other end all pass through the annular air duct and the heat preservation unit (103) and extend to a second joint on the heat preservation unit (103); one first joint and one second joint are configured for each heating zone.

6. The semiconductor heating device capable of partitioned temperature adjustment according to claim 1, wherein, The heat preservation unit (103) further comprises: A housing; An outer heat preservation layer (1021), which is arranged on the inner wall of the housing and forms the protruding isolation ring.

7. The semiconductor heating device capable of adjusting temperature in zones according to claim 1, characterized in that, The heating unit (101) comprises an inner heat preservation layer (1022).

8. The semiconductor heating device capable of partition-adjusting temperature according to claim 1, wherein, Each annular air duct corresponds to a temperature sensor unit; The temperature sensor in the temperature sensor unit is fixed on the heat preservation layer (103), and sequentially passes through the heat preservation layer (103), the annular air duct, and the heating unit (101) inward and extends into the internal space of the heating unit (101).

9. The semiconductor heating device capable of adjusting the temperature in a partitioned manner according to claim 1, wherein, A water cooling unit (102) is further arranged on the outer wall of the heat preservation unit (103), and the water cooling unit (102) surrounding it comprises a plurality of water cooling pipes connected in series, and the water cooling pipe assembly formed by connecting in series surrounds the heat preservation unit (103); the input end of the air cooling unit is located between two adjacent water cooling pipes.

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