GIS defect simulation method and device

Abstract

The invention provides a GIS defect simulation method and device, and belongs to the field of gas insulated electrical equipment. The method comprises the following steps: constructing a simulation model and an equivalent electric field model of GIS equipment; performing mesh generation and static steady-state analysis on the simulation model and the equivalent electric field model to obtain first electric field intensity distribution data and second electric field intensity distribution data; performing equal-proportion scaling on the second electric field intensity distribution data by taking the first electric field intensity distribution data as a reference to obtain simulation data of a normalized equivalent electric field model; adjusting the equivalent electric field model according to the normalized simulation data of the equivalent electric field model and the first electric field intensity distribution data to obtain an adjusted equivalent electric field model; and performing defect simulation according to the adjusted equivalent electric field model. According to the method disclosed by the invention, various GIS insulation defects can be simulated more authentically.

Description

Technical Field

[0001] The present disclosure belongs to the field of gas-insulated electrical equipment, and particularly relates to a GIS defect simulation method and device, an electronic device, a computer-readable storage medium, and a computer program product. Background Art

[0002] The safe operation of gas-insulated metal-enclosed switchgear (GIS) is crucial for the stability of the power system. GIS equipment is widely used in power systems of various voltage levels. It has good insulation performance, high reliability, strong arc extinguishing ability, small floor area, and long maintenance cycle. Production and operation practices show that the causes of GIS faults are divided into foreign object discharge, poor assembly process, and component defects. The corresponding defects mainly include metal particles, internal defects of insulating parts, loosening and dislocation of metal components. Under operating voltage, they can be manifested as "no partial discharge", "tiny partial discharge", and "significant partial discharge". Therefore, partial discharge detection and diagnosis are effective means to detect the early state of equipment faults in advance. However, the existing partial discharge diagnosis models are trained based on a large amount of experimental data of simulated insulation defect partial discharges. The existing laboratory artificial defect models have a large difference in electric field from actual GIS equipment, and the obtained experimental training results are often difficult to output accurate and reliable conclusions in practical applications.

[0003] Therefore, there are problems in the existing laboratory artificial defect simulation, such as the background electric field deviating from the actual situation, the defect type and scale being difficult to reflect the actual defects, and the significant difference between the discharge statistical characteristics and the actual statistical characteristics. Summary of the Invention

[0004] The present invention aims to at least solve one of the technical problems existing in the prior art, and provides a GIS defect simulation method and device, a computer-readable storage medium, and a computer program product with a small gap from actual equipment and high simulation efficiency.

[0005] To achieve the above object, in a first aspect, an embodiment of the present disclosure provides a GIS defect simulation method, the method comprising:

[0006] Construct a simulation model and an equivalent electric field model of a GIS device;

[0007] Perform mesh generation on the simulation model and the equivalent electric field model respectively;

[0008] Perform electrostatic steady-state analysis based on the meshed simulation model and the meshed equivalent electric field model respectively, to obtain first electric field intensity distribution data on the surface of the basin insulator corresponding to the simulation model, and second electric field intensity distribution data on the surface of the basin insulator corresponding to the equivalent electric field model;

[0009] Taking the first electric field strength distribution data as a reference, scale the second electric field strength distribution data proportionally to obtain the simulation data of the normalized equivalent electric field model;

[0010] According to the simulation data of the normalized equivalent electric field model and the first electric field strength distribution data, adjust the equivalent electric field model to obtain an adjusted equivalent electric field model;

[0011] Perform defect simulation according to the adjusted equivalent electric field model.

[0012] In some embodiments, the adjusting the equivalent electric field model according to the simulation data of the normalized equivalent electric field model and the first electric field strength distribution data to obtain an adjusted equivalent electric field model includes:

[0013] Calculate the root mean square error between the simulation data of the normalized equivalent electric field model and the first electric field strength distribution data;

[0014] Taking the minimum root mean square error as the goal, translate the simulation data of the normalized equivalent electric field model to obtain the simulation data of the translated equivalent electric field model;

[0015] According to the simulation data of the translated equivalent electric field model, adjust the equivalent electric field model to obtain an adjusted equivalent electric field model.

[0016] In some embodiments, the method further includes:

[0017] Set simulated defects on the adjusted equivalent electric field model and collect the experimental data of the simulated defects;

[0018] Determine the discharge characteristics of the GIS device based on the experimental data;

[0019] Compare the discharge characteristics with the first electric field strength distribution data to obtain a comparison result;

[0020] Optimize the adjusted equivalent electric field model according to the comparison result.

[0021] In some embodiments, the simulated defects include at least one of the following: fixed metal particles, free metal particles, insulator cracking, and metal burrs.

[0022] In some embodiments, constructing an equivalent electric field model includes:

[0023] Perform a similarity transformation on the simulated electric field of the GIS device according to electromagnetic field theory to reconstruct the equivalent electric field model.

[0024] In some embodiments, the reconstructing the equivalent electric field model includes:

[0025] The high-voltage conductor is set as a sphere, the pot insulator is set as a frustum of a cone, and the cone vertex in the frustum of the cone coincides with the center of the sphere of the high-voltage conductor;

[0026] The base is set as a spherical surface with a rounded corner radius, and the center of the sphere corresponding to the spherical surface is the same as the center of the sphere of the high-voltage conductor.

[0027] In some embodiments, the method further includes:

[0028] Detecting partial discharge of the GIS device according to the adjusted equivalent electric field model.

[0029] In a second aspect, an embodiment of the present disclosure further provides a GIS defect simulation device, and the device includes:

[0030] A construction module for constructing a simulation model and an equivalent electric field model of the GIS device;

[0031] A first calculation module for performing mesh generation on the simulation model and the equivalent electric field model respectively;

[0032] A second calculation module for performing electrostatic steady-state analysis based on the meshed simulation model and the meshed equivalent electric field model respectively, to obtain first electric field intensity distribution data on the surface of the pot insulator corresponding to the simulation model, and second electric field intensity distribution data on the surface of the pot insulator corresponding to the equivalent electric field model;

[0033] A scaling module for scaling the second electric field intensity distribution data proportionally with the first electric field intensity distribution data as a reference, to obtain simulation data of the normalized equivalent electric field model;

[0034] An adjustment module for adjusting the equivalent electric field model according to the simulation data of the normalized equivalent electric field model and the first electric field intensity distribution data, to obtain an adjusted equivalent electric field model;

[0035] A simulation module for performing defect simulation according to the adjusted equivalent electric field model.

[0036] In a third aspect, the present disclosure further provides an electronic device, including a memory, a processor, and a computer program stored on the memory and executable on the processor, and when the processor executes the program, the calculation method in the first aspect above is implemented.

[0037] In a fourth aspect, the present disclosure further provides a computer-readable storage medium, and the computer-readable storage medium stores a computer program for executing the calculation method in the first aspect above.

[0038] Fifth aspect, the present disclosure also provides a computer program product, including a computer program / instructions, which when executed by a processor implement the steps of the calculation method in the first aspect above.

[0039] In the embodiments of the present disclosure, by reconstructing the equivalent electric field model of the GIS device, the same processing is performed on the equivalent electric field model and the simulation model of the GIS device, and the equivalent electric field model is adjusted with the simulation model of the GIS device as a reference to improve the similarity between the equivalent electric field model and the real GIS device, so that the adjusted equivalent electric field model can more accurately simulate the insulation defects of the GIS device. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure or the prior art, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the drawings in the following description are only some embodiments of the present disclosure. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0041] Figure 1 It is a flowchart of a GIS defect simulation method provided by an embodiment of the present disclosure;

[0042] Figures 2a - 2d They are respectively the upper and lower isometric axonometric views of the GIS device simulation model provided by an embodiment of the present disclosure;

[0043] Figure 3 It is a sectional view of an equivalent electric field model provided by an embodiment of the present disclosure;

[0044] Figures 4a - 4b It is a schematic diagram of the mesh division of the simulation model of a GIS device provided by an embodiment of the present disclosure;

[0045] Figure 5 It is a schematic diagram of the mesh division of an equivalent electric field model provided by an embodiment of the present disclosure;

[0046] Figure 6 It is an electric field modulus cloud map obtained based on the simulation model provided by an embodiment of the present disclosure;

[0047] Figure 7 It is an electric field modulus cloud map obtained based on the equivalent electric field model provided by an embodiment of the present disclosure;

[0048] Figure 8 It is a comparative analysis chart of the simulation calculation results of a real GIS device and an equivalent electric field model provided by an embodiment of the present disclosure;

[0049] Figures 9a - 9cSchematic diagrams of three on-site photos of defect settings for checking and optimizing the equivalent electric field model provided by the embodiments of the present disclosure respectively;

[0050] Figure 10 Structural block diagram of a GIS defect simulation device 100 provided by the embodiments of the present disclosure;

[0051] Figure 11 Schematic diagram of the physical structure of the electronic device provided by the embodiments of the present invention. Detailed implementation manners

[0052] To enable those skilled in the art to better understand the technical solutions of the present invention, the present invention will be further described in detail and completely below in conjunction with the accompanying drawings and specific implementation manners. Obviously, the described embodiments are only a part of the embodiments of the present disclosure, rather than all of the embodiments. Based on the embodiments in the present disclosure, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the scope of protection of the present disclosure.

[0053] To solve the problem of data training failure caused by the large difference between artificial insulation defects and actual defects in the prior art laboratory mentioned in the background art, the present disclosure proposes an artificial defect design method based on coaxial-communication electric field similarity transformation, which can more accurately reflect the background electric field distribution of GIS basin insulators and the electric field distribution of insulating parts. At the same time, the present disclosure also gives an equivalent electric field model design and parameter optimization, manufacturing method and defect layout method, and constructs a simulation model of a true-type GIS device through simulation software, and calculates the electric field distribution of the true-type basin insulator. This design and manufacturing method of artificial insulation defects in the present disclosure not only has a small gap between the background electric field distribution and the actual device, but also can improve the efficiency of defect simulation experiments, obtain partial discharge characteristics and detection methods with high practical value, and provide an effective source for the generation of training and test data required for the partial discharge diagnosis model.

[0054] In the first aspect, the embodiments of the present disclosure provide a GIS defect simulation method.

[0055] Figure 1 Flowchart of a GIS defect simulation method provided by the embodiments of the present disclosure. As Figure 1 shown, the method includes the following steps:

[0056] S11. Construct a simulation model and an equivalent electric field model of the GIS device.

[0057] Among them, the simulation model of the GIS device mainly refers to a series of mathematical and physical models used to simulate and analyze the Gas Insulated Switchgear (GIS for short). The equivalent electric field model is the model reconstructed for the GIS device. The equivalent electric field model can simulate the actual GIS device and has good simulation accuracy.

[0058] Figures 2a - 2d They are the upper and lower isometric axonometric views of the GIS device simulation model provided by the embodiments of the present disclosure.

[0059] For the simulation model of the GIS device, the present disclosure can construct the simulation model of the GIS device according to a preset simulation software, including constructing the high-voltage conductor, pot insulator and shell of the GIS device, as Figure 2a shown. Among them, the preset simulation software can be COMSOL, or other simulation software, and the present disclosure does not limit this.

[0060] In some embodiments, the high-voltage conductor of the simulation model is set as a cylinder. For example, taking a cylinder with a diameter of 80 mm, a length of 1120 mm, and a material of Copper as an example for illustration, as Figure 2b shown.

[0061] In some embodiments, the material of the pot insulator of the simulation model is set as Filled epoxyresin(X238)[solid], and among them, the relative permittivity of the epoxy resin is 10.000, as Figure 2c shown.

[0062] In some embodiments, the material of the shell of the simulation model is set as 6061[solid,-T6] aluminum alloy, and among them, the relative permittivity of the aluminum alloy is 3.800, as Figure 2d shown.

[0063] In some embodiments, constructing the equivalent electric field model in step S11 includes: performing a similarity transformation on the simulated electric field of the GIS device according to the electromagnetic field theory, and reconstructing to obtain the equivalent electric field model.

[0064] In the embodiments of the present disclosure, the electromagnetic field theory is used for electric field similarity transformation to ensure that the electric field distribution of the equivalent electric field model has a high similarity with that of the actual GIS device, can highly simulate the electric field distribution of the actual GIS device, and improve the practical value of the experimental results.

[0065] In some embodiments, reconstructing to obtain the equivalent electric field model in step S11 specifically includes the following steps:

[0066] S111. Set the high-voltage conductor as a sphere and the insulator as a cone, and the vertex of the cone coincides with the center of the sphere of the high-voltage conductor.

[0067] S121. Set the base as a spherical surface with a rounded corner radius, and the center of the sphere corresponding to the spherical surface and the center of the sphere of the high-voltage conductor are the same center of the sphere.

[0068] Specifically, Figure 3 This is a cross-sectional view of an equivalent electric field model provided by an embodiment of the present disclosure.

[0069] As Figure 3 shown, for the equivalent electric field model of the GIS device, the high-voltage conductor of the equivalent electric field model is designed as a sphere, where the diameter of the sphere is 16 mm and the material is copper.

[0070] In some embodiments, the pot-shaped insulator of the equivalent electric field model is set as a frustum of a cone. Among them, the vertex of the insulator cone in the equivalent electric field model coincides with the center of the sphere of the high-voltage conductor, the effective vertical length of the edge is 14.07 mm, the angle between the edge and the central axis is 30°, the upper and lower ends are optimized with a rounded corner of 3 mm, and the material of the pot-shaped insulator of the equivalent electric field model is filled epoxy resin (X238)[solid], and the relative dielectric constant of the epoxy resin is 10.000.

[0071] In some embodiments, the upper surface of the base of the equivalent electric field model is designed as a spherical surface with a radius of 30 mm, the bottom surface of the base is a plane circle with a diameter of 51.96 mm, the side surface and the top surface of the base are connected with a rounded corner design with a radius of 8 mm, and the material is copper.

[0072] S12. Perform mesh generation on the simulation model and the equivalent electric field model respectively.

[0073] Specifically, Figures 4a - 4b This is a schematic diagram of the mesh generation of the simulation model of a GIS device provided by an embodiment of the present disclosure. As Figures 4a - 4b shown, perform mesh generation on the simulation model of the GIS device and its internal space, where the pot-shaped insulator adopts refined mesh generation.

[0074] Figure 5 This is a schematic diagram of the mesh generation of the equivalent electric field model provided by an embodiment of the present disclosure. As Figure 5 shown, perform mesh generation on the equivalent electric field model and its surrounding space.

[0075] S13. Perform electrostatic steady-state analysis based on the dissected simulation model and the dissected equivalent electric field model respectively, to obtain the first electric field intensity distribution data on the surface of the basin insulator corresponding to the simulation model, and the second electric field intensity distribution data on the surface of the basin insulator corresponding to the equivalent electric field model.

[0076] Specifically, for the first electric field intensity distribution data on the surface of the basin insulator corresponding to the simulation model, perform electrostatic steady-state analysis on the simulation model of the full-scale GIS device, set the voltage of the high-voltage conductor to 5000 kV, and ground the outer shell.

[0077] Figure 6 This is an electric field modulus cloud map obtained based on the simulation model provided by an embodiment of the present disclosure. As Figure 6 shown, the simulation results show the electric field intensity distribution on the surface of the basin insulator, and the modulus of the electric field intensity is marked by the cloud map.

[0078] For the second electric field intensity distribution data on the surface of the basin insulator corresponding to the equivalent electric field model, perform electrostatic steady-state analysis on the equivalent electric field model, set the voltage of the high-voltage conductor to 30 kV, and ground the base.

[0079] Figure 7 This is an electric field modulus cloud map obtained based on the equivalent electric field model provided by an embodiment of the present disclosure. As Figure 7 shown, the simulation results show the electric field intensity distribution on the surface of the basin insulator, and the modulus of the electric field intensity is marked by the cloud map.

[0080] S14. Taking the first electric field intensity distribution data as a reference, perform equal-proportion scaling on the second electric field intensity distribution data to obtain the simulation data of the normalized equivalent electric field model.

[0081] Specifically, taking the simulation calculation result of the electric field modulus of the full-scale GIS device as a reference, perform equal-proportion scaling on the simulation calculation result of the electric field modulus of the equivalent electric field model, so that the simulation model of the full-scale GIS device and the equivalent electric field model are in the same proportion, and coordinate normalization is completed.

[0082] S15. According to the simulation data of the normalized equivalent electric field model and the first electric field intensity distribution data, adjust the equivalent electric field model to obtain an adjusted equivalent electric field model.

[0083] Specifically, according to the simulation data of the normalized equivalent electric field model and the first electric field intensity distribution data, determine the gap between the simulation data of the normalized equivalent electric field model and the first electric field intensity distribution data, so as to adjust the equivalent electric field model to improve the similarity between the equivalent electric field model and the full-scale GIS device, and make the adjusted equivalent electric field model be able to more accurately simulate the insulation defects of the GIS device.

[0084] S16. Perform defect simulation based on the adjusted equivalent electric field model.

[0085] In the embodiments of the present disclosure, by reconstructing the equivalent electric field model of the GIS device, the same processing is performed on the equivalent electric field model and the simulation model of the GIS device, and the equivalent electric field model is adjusted with the simulation model of the GIS device as a reference to improve the similarity between the equivalent electric field model and the true GIS device, so that the adjusted equivalent electric field model can more realistically simulate the insulation defects of the GIS device. Further, the equivalent electric field model is small in size and low in working voltage, which is convenient for improving the defect preparation efficiency and simulation experiment efficiency in the laboratory.

[0086] In some embodiments, step S15. Adjust the equivalent electric field model according to the simulation data of the normalized equivalent electric field model and the first electric field intensity distribution data to obtain an adjusted equivalent electric field model, including the following steps:

[0087] S151. Calculate the root mean square error between the simulation data of the normalized equivalent electric field model and the first electric field intensity distribution data.

[0088] S152. Translate the simulation data of the normalized equivalent electric field model with the goal of minimizing the root mean square error to obtain the simulation data of the translated equivalent electric field model.

[0089] S153. Adjust the equivalent electric field model according to the simulation data of the translated equivalent electric field model to obtain an adjusted equivalent electric field model.

[0090] Specifically, when translating the simulation data of the normalized equivalent electric field model, the optimal translation distance is calculated using a preset algorithm. The preset algorithm can be the L-BFGS algorithm or other algorithms, and the present disclosure does not limit this. The optimal translation distance means that the root mean square error (RMSE) between the simulation data of the equivalent electric field model and the simulation data of the basin insulator of the true GIS device is minimized, that is, solve

[0091]

[0092] where y i+p is the simulation data of the i-th equivalent electric field model translated by a distance of p, is the simulation data of the i-th true basin insulator.

[0093] In some embodiments, step S153. Adjust the equivalent electric field model according to the simulation data of the normalized equivalent electric field model and the first electric field intensity distribution data, further includes:

[0094] Based on the simulation data of the normalized equivalent electric field model and the first electric field intensity distribution data, complete the missing data in the simulation data of the normalized equivalent electric field model and / or the first electric field intensity distribution data; calculate the root mean square error between the simulation data of the completed normalized equivalent electric field model and the completed first electric field intensity distribution data.

[0095] In some embodiments, the missing data in the simulation data of the normalized equivalent electric field model and / or the first electric field intensity distribution data can be completed by linear interpolation.

[0096] Figure 8 This is a comparative analysis diagram of the simulation calculation results of a real GIS device and an equivalent electric field model provided by an embodiment of the present disclosure. As Figure 8 shown, through adjustment, the final RMSE value is 0.1470, indicating a high similarity between the equivalent electric field model and the electric field distribution of the real basin insulator.

[0097] In some embodiments, the method not only includes S11 to S16, but also includes the following steps:

[0098] S21. Set simulated defects on the adjusted equivalent electric field model and collect experimental data of the simulated defects.

[0099] In some embodiments, the simulated defects include at least one of the following: fixed metal particles, free metal particles, insulator cracking, and metal burrs.

[0100] Figures 9a - 9c These are respectively schematic diagrams of three on-site photos of the equivalent electric field model calibration and optimization defect settings provided by an embodiment of the present disclosure. Set simulated defects on the equivalent electric field model, for example, manufacture metal burrs on the high-voltage conductor, solder with a size of 5mm * 5mm, as Figures 9a - 9c shown.

[0101] S22. Determine the discharge characteristics of the GIS device based on the experimental data.

[0102] Specifically, use partial discharge multi-spectral sensors, UHF sensors, HFCT, piezoelectric ultrasonic sensors, and fiber optic ultrasonic sensors to collect experimental data. Process the experimental data, draw PRPD diagrams and diagrams of the relationship between ultrasonic signals and voltage phases, and analyze the partial discharge characteristics.

[0103] S23. Compare the discharge characteristics with the first electric field intensity distribution data to obtain a comparison result.

[0104] Specifically, compare the processed experimental data with the electric field distribution of the real basin insulator to verify the accuracy of the equivalent electric field model.

[0105] S24. Optimize the adjusted equivalent electric field model according to the comparison result.

[0106] Specifically, if there is a large gap between the processed experimental data and the electric field distribution of the true-type basin insulator, the equivalent electric field model can be optimized again based on the gap between the two, making the equivalent electric field model more accurate.

[0107] In some embodiments, the method not only includes steps S11 - S16 and steps S21 - S24, but also includes: detecting partial discharge of GIS equipment according to the adjusted equivalent electric field model.

[0108] Specifically, set simulated defects on the adjusted equivalent electric field model, and collect experimental data of the simulated defects; determine the discharge characteristics of the GIS equipment based on the experimental data to detect partial discharge of the GIS equipment.

[0109] In the embodiments of the present disclosure, the equivalent electric field model is used to simulate GIS defects. Among them, the equivalent electric field model can simulate the partial discharge phenomenon in the actual GIS equipment, and the partial discharge characteristics are similar to those of the true-type basin insulator. Moreover, the equivalent electric field model can be used to develop and test new partial discharge detection methods, providing a theoretical basis and technical support for the fault diagnosis and prevention of GIS equipment.

[0110] The GIS defect simulation method provided by the present disclosure uses the electromagnetic field theory to perform electric field similarity transformation, ensuring that the electric field distribution of the model is highly similar to that of the actual equipment, highly simulating the electric field distribution of the actual GIS equipment, and improving the practical value of the experimental results. The defect model has a small size and a low working voltage, facilitating the improvement of the defect preparation efficiency and simulation experiment efficiency in the laboratory. It can relatively realistically simulate various GIS insulation defects, such as common defect forms like metal particles on the basin insulator, abnormal electric fields at the triple junction points, and abnormal electric fields on the insulation surface.

[0111] In a second aspect, based on the same inventive concept, the embodiments of the present disclosure also provide a GIS defect simulation device.

[0112] Figure 10 Shown in the following is a structural block diagram of a GIS defect simulation device 100 provided by the embodiments of the present disclosure. As Figure 10 shown, the device 100 includes a construction module 101, a first calculation module 102, a second calculation module 103, a scaling module 104, an adjustment module 105, and a simulation module 106.

[0113] Among them, the construction module 101 is used to construct a simulation model and an equivalent electric field model of the GIS equipment.

[0114] The first calculation module 102 is used to perform mesh generation on the simulation model and the equivalent electric field model respectively.

[0115] The second calculation module 103 is used to perform electrostatic steady-state analysis based on the meshed simulation model and the meshed equivalent electric field model respectively, to obtain the first electric field intensity distribution data on the surface of the basin insulator corresponding to the simulation model, and the second electric field intensity distribution data on the surface of the basin insulator corresponding to the equivalent electric field model.

[0116] The scaling module 104 is used to perform proportional scaling on the second electric field intensity distribution data based on the first electric field intensity distribution data, to obtain the simulation data of the normalized equivalent electric field model.

[0117] The adjustment module 105 is used to adjust the equivalent electric field model according to the simulation data of the normalized equivalent electric field model and the first electric field intensity distribution data, to obtain the adjusted equivalent electric field model.

[0118] The simulation module 106 is used to perform defect simulation according to the adjusted equivalent electric field model.

[0119] In some embodiments, the adjustment module 105 includes a calculation unit 115, a translation unit 125, and an adjustment unit 135.

[0120] Among them, the calculation unit 115 is used to calculate the root mean square error between the simulation data of the normalized equivalent electric field model and the first electric field intensity distribution data.

[0121] The translation unit 125 is used to translate the simulation data of the normalized equivalent electric field model with the goal of minimizing the root mean square error, to obtain the simulation data of the translated equivalent electric field model.

[0122] The adjustment unit 135 is used to adjust the equivalent electric field model according to the simulation data of the translated equivalent electric field model, to obtain the adjusted equivalent electric field model.

[0123] In some embodiments, the device not only includes a construction module 101, a first calculation module 102, a second calculation module 103, a scaling module 104, an adjustment module 105, and a simulation module 106, but also includes a collection module 107, a determination module 108, a comparison module 109, and an optimization module 110.

[0124] Among them, the collection module 107 is used to set simulated defects on the adjusted equivalent electric field model and collect the experimental data of the simulated defects.

[0125] The determination module 108 is used to determine the discharge characteristics of the GIS device based on the experimental data.

[0126] The comparison module 109 is configured to compare the discharge characteristics with the first electric field intensity distribution data to obtain a comparison result.

[0127] The optimization module 110 is configured to optimize the adjusted equivalent electric field model according to the comparison result.

[0128] In some embodiments, the simulated defects include at least one of the following: fixed metal particles, free metal particles, insulator cracking, and metal burrs.

[0129] In some embodiments, the apparatus 100 not only includes the construction module 101, the first calculation module 102, the second calculation module 103, the scaling module 104, the adjustment module 105, the simulation module 106, the acquisition module 107, the determination module 108, the comparison module 109, and the optimization module 110, but also includes a detection module 001, where the detection module 001 is configured to detect partial discharge of the GIS device according to the adjusted equivalent electric field model.

[0130] In some embodiments, the construction module 101 is specifically configured to perform a similarity transformation on the simulated electric field of the GIS device according to the electromagnetic field theory to reconstruct the equivalent electric field model.

[0131] In some embodiments, the construction module 101 includes a first setting unit 111 and a second setting unit 121.

[0132] Among them, the first setting unit 111 is configured to set the high-voltage conductor as a sphere, set the pot-type insulator as a frustum of a cone, and the cone vertex of the frustum of the cone coincides with the center of the sphere of the high-voltage conductor.

[0133] The second setting unit 121 is configured to set the base as a spherical surface with a rounded corner radius, and the center of the sphere corresponding to the spherical surface is the same as the center of the sphere of the high-voltage conductor.

[0134] It can be understood that for the specific details and corresponding technical effects of the apparatus 100 provided in the embodiments of the present disclosure, reference may be made to the specific details and corresponding technical effects of any method embodiment in the first aspect above, and details will not be repeated here.

[0135] In a third aspect, embodiments of the present disclosure further provide an electronic device, including a memory, a processor, and a computer program stored in the memory and executable on the processor, where the processor implements the method according to any one of the first aspects when executing the computer program.

[0136] Specifically, Figure 11 is a schematic diagram of the physical structure of the electronic device provided in the embodiments of the present invention, as Figure 11As shown, the electronic device 003 includes a processor 301, a memory 302, and a bus 303. Among them, the processor 301 and the memory 302 communicate with each other through the bus 303.

[0137] The processor 301 is used to call the program instructions in the memory 302 to execute the methods provided in the above method embodiments.

[0138] In a fourth aspect, an embodiment of the present disclosure further provides a computer-readable storage medium storing a computer program of the method described in any one of the above first aspects.

[0139] In a fifth aspect, an embodiment of the present disclosure further provides a computer program product including a computer program / instructions, and when the computer program / instructions are executed by a processor, the steps of the method described in any one of the above first aspects are implemented.

[0140] Those skilled in the art should understand that the embodiments of the present disclosure can be provided as a method, a system, or a computer program product. Therefore, the present disclosure can take the form of a complete hardware embodiment, a complete software embodiment, or an embodiment combining software and hardware aspects. Moreover, the present disclosure can take the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.

[0141] The present disclosure is described with reference to the flowcharts and / or block diagrams of methods, devices (systems), and computer program products according to the embodiments of the present disclosure. It should be understood that each process and / or block in the flowchart and / or block diagram, and the combination of processes and / or blocks in the flowchart and / or block diagram can be implemented by computer program instructions. These computer program instructions can be provided to the processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing devices to generate a machine, so that the instructions executed by the processor of the computer or other programmable data processing devices generate a device for implementing the specified functions in Figure 1 one process or multiple processes and / or blocks Figure 1 one block or multiple blocks.

[0142] These computer program instructions can also be stored in a computer-readable memory that can direct a computer or other programmable data processing device to work in a specific manner, so that the instructions stored in the computer-readable memory generate a manufactured article including an instruction device that implements the specified functions in Figure 1 one process or multiple processes and / or blocks Figure 1 one block or multiple blocks.

[0143] These computer program instructions can also be loaded onto a computer or other programmable data processing apparatus, so that a series of operation steps are performed on the computer or other programmable apparatus to produce a computer-implemented process, thereby providing instructions for implementing the steps of the function specified in one process or a plurality of processes and / or blocks Figure 1 one process or a plurality of processes and / or blocks Figure 1 in one block or a plurality of blocks.

[0144] Specific embodiments are used in the present disclosure to elaborate on the principles and implementation manners of the present disclosure. The description of the above embodiments is only used to help understand the method and its core idea of the present disclosure; at the same time, for those of ordinary skill in the art, according to the idea of the present disclosure, there will be changes in the specific implementation manners and application scopes. In summary, the content of this specification should not be construed as a limitation to the present disclosure.

Claims

1. A method for simulating GIS defects, characterized in that, The method includes: Constructing a simulation model and an equivalent electric field model of the GIS device; Performing mesh generation on the simulation model and the equivalent electric field model respectively; Performing electrostatic steady-state analysis based on the meshed simulation model and the meshed equivalent electric field model respectively, to obtain first electric field intensity distribution data on the surface of the basin insulator corresponding to the simulation model, and second electric field intensity distribution data on the surface of the basin insulator corresponding to the equivalent electric field model; Taking the first electric field intensity distribution data as a reference, performing proportional scaling on the second electric field intensity distribution data to obtain simulation data of the normalized equivalent electric field model; Adjusting the equivalent electric field model according to the simulation data of the normalized equivalent electric field model and the first electric field intensity distribution data to obtain an adjusted equivalent electric field model; Performing defect simulation according to the adjusted equivalent electric field model.

2. The method according to claim 1, characterized in that The adjusting the equivalent electric field model according to the simulation data of the normalized equivalent electric field model and the first electric field intensity distribution data to obtain an adjusted equivalent electric field model includes: Calculating the root mean square error between the simulation data of the normalized equivalent electric field model and the first electric field intensity distribution data; Taking the minimum root mean square error as the target, performing translation on the simulation data of the normalized equivalent electric field model to obtain simulation data of the translated equivalent electric field model; Adjusting the equivalent electric field model according to the simulation data of the translated equivalent electric field model to obtain an adjusted equivalent electric field model.

3. The method according to claim 1, characterized in that, The method further includes: Setting simulated defects on the adjusted equivalent electric field model and collecting experimental data of the simulated defects; Determining the discharge characteristics of the GIS device based on the experimental data; Comparing the discharge characteristics with the first electric field intensity distribution data to obtain a comparison result; Optimizing the adjusted equivalent electric field model according to the comparison result.

4. The method according to claim 3, characterized in that, The simulated defects include at least one of the following: fixed metal particles, free metal particles, insulator cracking, and metal burrs.

5. The method according to claim 1, wherein Constructing the equivalent electric field model includes: Performing similarity transformation on the simulated electric field of the GIS device according to electromagnetic field theory and reconstructing to obtain the equivalent electric field model.

6. The method according to claim 5, characterized in that, The reconstructing to obtain the equivalent electric field model includes: Setting the high-voltage conductor as a sphere, setting the basin insulator as a frustum of a cone, and the cone vertex of the frustum of the cone coincides with the center of the sphere of the high-voltage conductor; Setting the base as a spherical surface with a rounded corner radius, and the center of the sphere corresponding to the spherical surface coincides with the center of the sphere of the high-voltage conductor.

7. The method according to claim 1, wherein The method further includes: Performing detection of partial discharge of the GIS device according to the adjusted equivalent electric field model.

8. A GIS defect simulation device, characterized in that, The device includes: A construction module for constructing a simulation model and an equivalent electric field model of the GIS device; A first calculation module for performing mesh generation on the simulation model and the equivalent electric field model respectively; A second calculation module, configured to perform an electrostatic steady-state analysis based on the meshed simulation model and the meshed equivalent electric field model respectively, so as to obtain first electric field intensity distribution data on the surface of the pot insulator corresponding to the simulation model, and second electric field intensity distribution data on the surface of the pot insulator corresponding to the equivalent electric field model; A scaling module, configured to scale the second electric field intensity distribution data proportionally with reference to the first electric field intensity distribution data, so as to obtain simulation data of the normalized equivalent electric field model; An adjustment module, configured to adjust the equivalent electric field model according to the simulation data of the normalized equivalent electric field model and the first electric field intensity distribution data, so as to obtain an adjusted equivalent electric field model; A simulation module, configured to perform defect simulation according to the adjusted equivalent electric field model.

9. An electronic device, comprising a memory, a processor, and a computer program stored on the memory and executable on the processor, characterized in that, When the processor executes the computer program, the method according to any one of claims 1 to 7 is implemented.

10. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores a computer program for executing the method according to any one of claims 1 to 7.

11. A computer program product, comprising a computer program / instructions, characterized in that, When the computer program / instructions are executed by the processor, the steps of the method according to any one of claims 1 to 7 are implemented.

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