High-strength glass and preparation method thereof

Abstract

The present invention discloses a high-strength glass, comprising: a tempered glass substrate; an #imgabs0# layer on the tempered glass substrate, wherein x=1-3, y=6-8, and x+y=9; an #imgabs2# layer on the #imgabs1# layer, wherein w=2-4, z=5-7, and w+z=9; an #imgabs4# layer on the #imgabs3# layer, wherein a=1-3, b=6-8, and a+b=9; and an #imgabs6# layer on the #imgabs5# layer, wherein c=2-4, d=5-7, and c+d=9. The high-strength glass of the present invention uses an amorphous alloy coating, which greatly reduces the risk of grain boundary corrosion. Furthermore, the coatings of the present invention are all rare earth-doped amorphous alloy coatings, which can significantly improve the mechanical properties of the tempered glass.

Description

Technical Field

[0001] The present invention relates to the technical field of layered materials, in particular to a high-strength glass and a preparation method thereof. Background Art

[0002] Tempered glass is glass with compressive stress on its surface. Tempered glass is categorized into physically tempered glass and chemically tempered glass based on the tempering method, and into flat tempered glass and curved tempered glass based on the shape of the tempered glass. Tempered glass has been an important type of glass product since its introduction. Prior art CN109574499A discloses a high-strength tempered glass. While the tempered glass proposed in this prior art exhibits high mechanical properties, it lacks a surface coating, which prevents further improvement in the performance of the tempered glass. Prior art CN117865506A also proposes a high-strength tempered glass. While this prior art recognizes that certain coatings can enhance the performance of tempered glass, the coatings used in this prior art are not resistant to high temperatures (for example, this prior art only tests the glass's heat resistance at 100°C and its low-temperature resistance at -35°C). This results in the tempered glass proposed in this prior art being unusable in both high and low-temperature environments.

[0003] The information disclosed in this background technology section is only intended to enhance understanding of the overall background of the invention and should not be regarded as an admission or any form of suggestion that the information constitutes the prior art already known to a person skilled in the art. Summary of the Invention

[0004] The object of the present invention is to provide a high-strength glass and a preparation method thereof. The high-strength glass of the present invention uses an amorphous alloy coating. The amorphous alloy coating can withstand high and low temperatures, and there are no grain boundaries in the amorphous alloy, which greatly reduces the risk of grain boundary corrosion. In addition, the coating of the present invention is a rare earth-doped amorphous alloy coating. This type of coating can significantly improve the mechanical properties of tempered glass.

[0005] The present invention provides a high-strength glass, comprising:

[0006] Tempered glass substrate;

[0007] Fe on tempered glass substrate 90 Zr1Gd x Ce y Layer, where x=1-3, y=6-8, and x+y=9;

[0008] In Fe 90 Zr1Gd x Ce y Fe on the layer 90 ZlUT w Cez Layer, where w = 2-4, z = 5-7, and w + z = 9;

[0009] In Fe 90 ZlUT w Ce z Fe on the layer 90 Zr1Gd a La b Layer, where a=1-3, b=6-8, and a+b=9; and

[0010] In Fe 90 Zr1Gd a La b Fe on the layer 90 ZlUT c La d Layer, where c=2-4, d=5-7, and c+d=9.

[0011] In a preferred embodiment, Fe 90 Zr1Gd x Ce y The thickness of the layer is 300-500 nm.

[0012] In a preferred embodiment, Fe 90 ZlUT w Ce z The thickness of the layer is 200-290 nm.

[0013] In a preferred embodiment, Fe 90 Zr1Gd a La b The thickness of the layer is 300-500 nm.

[0014] In a preferred embodiment, Fe 90 ZlUT c La d The thickness of the layer is 150-180 nm.

[0015] In a preferred embodiment, Fe 90 Zr1Gd x Ce y The layer is formed by the following method: Fe 90 Zr1Gd x Ce y layer, the sputtering power supply is a radio frequency power supply, the sputtering voltage is 100-150V, the sputtering power is 140-200W, the sputtering temperature is 100-150°C, the sputtering atmosphere is an argon atmosphere, and the argon flow rate is 30-40sccm.

[0016] In a preferred embodiment, Fe 90 ZlUT w Ce z The layer is formed by the following method: Fe 90 ZlUT w Ce z layer, the sputtering power supply is a radio frequency power supply, the sputtering voltage is 40-50V, the sputtering power is 70-100W, the sputtering temperature is 100-150°C, the sputtering atmosphere is an argon atmosphere, and the argon flow rate is 30-40sccm.

[0017] In a preferred embodiment, Fe 90 Zr1Gd a La b The layer is formed by the following method: Fe 90 Zr1Gd a La b layer, the sputtering power supply is a radio frequency power supply, the sputtering voltage is 40-50V, the sputtering power is 70-100W, the sputtering temperature is 100-150°C, the sputtering atmosphere is an argon atmosphere, and the argon flow rate is 30-40sccm.

[0018] In a preferred embodiment, Fe 90 ZlUT c La d The layer is formed by the following method: Fe 90 ZlUT c La d layer, the sputtering power supply is a radio frequency power supply, the sputtering voltage is 100-150V, the sputtering power is 100-150W, the sputtering temperature is 100-150°C, the sputtering atmosphere is an argon atmosphere, and the argon flow rate is 30-40sccm.

[0019] The present invention provides a method for preparing high-strength glass, the method comprising:

[0020] Tempered glass available;

[0021] Fe deposition on the surface of tempered glass 90 Zr1Gd x Ce y Layer, where x=1-3, y=6-8, and x+y=9;

[0022] In Fe 90 Zr1Gd x Ce y Fe deposition on the surface of the layer 90 ZlUT w Ce zLayer, where w = 2-4, z = 5-7, and w + z = 9;

[0023] In Fe 90 ZlUT w Ce z Fe deposition on the surface of the layer 90 Zr1Gd a La b Layer, where a=1-3, b=6-8, and a+b=9; and

[0024] In Fe 90 Zr1Gd a La b Fe deposition on the surface of the layer 90 ZlUT c La d Layer, where c=2-4, d=5-7, and c+d=9.

[0025] Compared with the prior art, the present invention has the following advantages: the high-strength glass of the present invention uses an amorphous alloy coating, which is resistant to high and low temperatures, and there are no grain boundaries in the amorphous alloy, which greatly reduces the risk of grain boundary corrosion. In addition, the coatings of the present invention are all rare earth-doped amorphous alloy coatings, which can significantly improve the mechanical properties of tempered glass. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 It is a structural diagram of an embodiment of the present invention.

[0027] Figure 2 It is a structural diagram of another embodiment of the present invention.

[0028] Figure 3 It is a method flow chart of an embodiment of the present invention.

[0029] Figure 4 This is an XRD pattern of an embodiment of the present invention.

[0030] Figure 5 is an XRD pattern of another embodiment of the present invention. DETAILED DESCRIPTION

[0031] The specific embodiments of the present invention are described in detail below with reference to the accompanying drawings, but it should be understood that the protection scope of the present invention is not limited by the specific embodiments.

[0032] Figure 1 This is a schematic diagram of the structure of an embodiment of the present invention. As shown in the figure, the high-strength glass of the present invention comprises a tempered glass substrate, a Fe 90 Zr1Gd x Cey layer, Fe 90 ZlUT w Ce z layer, Fe 90 Zr1Gd a La b layer and Fe 90 ZlUT c La d It should be noted that Figure 1 The structure of the tempered glass shown is suitable for tempered glass subjected to unidirectional stress, such as glass containers.

[0033] Figure 2 It is a structural diagram of another embodiment of the present invention. As shown in the figure, this embodiment is Figure 1 The difference is that in this embodiment, both sides of the tempered glass substrate include Fe 90 Zr1Gd x Ce y layer, Fe 90 ZlUT w Ce z layer, Fe 90 Zr1Gd a La b layer and Fe 90 ZlUT c La d It is understandable that the structure of this embodiment can be adopted for tempered glass subjected to stress on both sides.

[0034] Figure 3 1 is a flow chart of a method according to an embodiment of the present invention. As shown in the figure, the method according to the present invention includes the following steps:

[0035] Step 1: Provide tempered glass;

[0036] Step 2: Deposit Fe on the tempered glass surface 90 Zr1Gd x Ce y layer;

[0037] Step 3: In Fe 90 Zr1Gd x Ce y Fe deposition on the surface of the layer 90 ZlUT w Ce z layer;

[0038] Step 4: In Fe 90 ZlUT w Ce z Fe deposition on the surface of the layer 90 Zr1Gd aLa b Layer; and

[0039] Step 5: In Fe 90 Zr1Gd a La b Fe deposition on the surface of the layer 90 ZlUT c La d layer.

[0040] Example 1

[0041] High-strength glass includes: tempered glass substrate; Fe 90 Zr1Gd x Ce y layer, where x=1, y=8; in Fe 90 Zr1Gd x Ce y Fe on the layer 90 ZlUT w Ce z layer, where w=2, z=7,; in Fe 90 ZlUT w Ce z Fe on the layer 90 Zr1Gd a La b layer, where a=1, b=8; and in Fe 90 Zr1Gd a La b Fe on the layer 90 ZlUT c La d For the purpose of comparison, unless otherwise stated, the tempered glass used in each embodiment or comparative example of the present invention is the glass of Example 3 in the prior art CN109574499A, which can be purchased directly from the patent holder.

[0042] Fe 90 Zr1Gd x Ce y The thickness of the layer is 300 nm. 90 ZlUT w Ce z The thickness of the layer is 200 nm. 90 Zr1Gd a La b The thickness of the layer is 300 nm. 90 ZlUT c La d The thickness of the layer was 150 nm.

[0043] Fe 90 Zr1Gd x Ce y The layer is formed by the following method: Fe 90 Zr1Gd x Ce y The sputtering power source is a radio frequency power source, the sputtering voltage is 100V, the sputtering power is 140W, the sputtering temperature is 100°C, the sputtering atmosphere is an argon atmosphere, and the argon flow rate is 30sccm. It can be understood that the target material used in this step is Fe 90 Zr1Gd1Ce8 target material can be formed by powder metallurgy process. The process steps are briefly described as follows: first, the raw materials are matched according to the chemical ratio, and then the raw materials are melted into alloy ingots by smelting method. Then the alloy ingots are mechanically crushed, and then the alloy fragments are ball milled to obtain alloy powder. Then, the alloy powder is cold pressed and hot pressed to form Fe 90 The target material of Zr1Gd1Ce8 and the process parameters of each step of powder metallurgy are common knowledge and will not be described in detail in this invention. In addition, the alloy target material of this invention is processed by a local nonferrous metal processing plant. It should be understood that the preparation method of the target material used to form other layers in Example 1 is the same as that of Fe 90 The Zr1Gd1Ce8 target materials are similar, and the targets used to form the other layers in Example 1 are also processed by a local nonferrous metal processing plant. For other embodiments and comparative examples of the present invention, the manufacturing methods and sources of the targets are the same as those in Example 1 and will not be repeated here.

[0044] Fe 90 ZlUT w Ce z The layer is formed by the following method: Fe 90 ZlUT w Ce z layer, the sputtering power supply is a radio frequency power supply, the sputtering voltage is 40 V, the sputtering power is 70 W, the sputtering temperature is 100 ° C, the sputtering atmosphere is an argon atmosphere, and the argon flow rate is 30 sccm.

[0045] Fe 90 Zr1Gd a La b The layer is formed by the following method: Fe 90 Zr1Gd a La b layer, the sputtering power supply is a radio frequency power supply, the sputtering voltage is 40 V, the sputtering power is 70 W, the sputtering temperature is 100 ° C, the sputtering atmosphere is an argon atmosphere, and the argon flow rate is 30 sccm.

[0046] Fe 90ZlUT c La d The layer is formed by the following method: Fe 90 ZlUT c La d layer, the sputtering power supply is a radio frequency power supply, the sputtering voltage is 100 V, the sputtering power is 100 W, the sputtering temperature is 100° C., the sputtering atmosphere is an argon atmosphere, and the argon flow rate is 30 sccm.

[0047] Among traditional amorphous alloys, FeZr alloys doped solely with rare earth elements (REs) are difficult to form. These alloys typically contain scattered nanocrystals, which display distinct diffraction peaks in XRD patterns. To form amorphous alloys, boron (B) is typically added to the FeZr alloy (because B promotes amorphous formation). This is why FeZrB-based amorphous alloys are a mainstream class of amorphous alloys. Similarly, FeCoSiB is also a mainstream amorphous alloy. However, B is a non-metal. Its addition to the alloy results in the formation of a non-metallic compound phase in the resulting amorphous alloy. This phase exhibits fundamentally different properties, including properties and thermodynamic characteristics, from the other phases. This often results in phase boundaries becoming mechanical and corrosion vulnerabilities. Rare earth-doped FeZr alloys can be produced without B doping using costly and extreme processes, but this method is only suitable for small-scale laboratory preparation and research and is not suitable for industrial production. The composite film structure of the present invention can eliminate the nanocrystalline particles in each film layer under the premise of using only non-extreme processes, thereby forming an amorphous coating. Since the amorphous coating does not have grain boundaries, the risk of grain boundary corrosion is reduced and the product life is increased. The XRD diffraction pattern of Example 1 can be seen in Figure 4 . The principle by which the composite film layer of the present invention promotes the formation of amorphous may be as follows: each layer introduces a combination of multiple rare earth elements, which significantly improves the configurational mixing entropy of the system. According to the Boltzmann entropy formula, the increase in the number of components in the four-layer structure greatly increases the mixing entropy compared to the single-layer system. The chemical similarity between rare earth elements avoids phase separation, and the high entropy state effectively suppresses the driving force for the phase transition from amorphous to crystalline. The rare earth elements in each layer have significant differences in atomic radius, and the atomic size mismatch between adjacent layers is 4.3%-16.1%. This size gradient forms a strain barrier at the interface between layers. When the mismatch increases, the energy barrier that needs to be overcome by atomic diffusion also increases, effectively blocking the grain boundary migration channel and kinetically inhibiting the crystallization process. All atomic pairs (Fe-Gd, Fe-Ce, Gd-La, etc.) exhibit negative mixing enthalpy characteristics. Multilayer stacking forms strong metallic bond hybridization in the interface region, enhancing the thermal stability of the amorphous state.

[0048] Example 1 was subjected to impact strength and bending strength tests. The impact strength test complied with the relevant provisions of GB15763.2-2005, "Safety Glass for Buildings Part 2: Tempered Glass," and the bending strength test complied with the prior art CN117865506A. The impact strength was 152 MPa, and the bending strength was 120 MPa. It can be seen that compared to the uncoated tempered glass in CN109574499A, the strength of the high-strength glass of the present invention is significantly improved. This improvement in mechanical properties can be roughly explained by the following theory: the cross-scale coupling of electronic state reconstruction, lattice dynamics modulation, and defect response of the rare earth elements in the coating enhances the mechanical properties of the tempered glass. In terms of interfacial bonding strengthening, the unsaturated 4f orbitals of light rare earth elements (such as Ce³⁺) hybridize with the 2p orbitals of oxygen atoms in the glass matrix, forming a highly directional metal-oxygen-silicon covalent bond network. This hybrid state restructures the interfacial electron cloud distribution, shifting the bonding electron density toward higher potential energy and significantly enhancing interatomic bonding. Simultaneously, the partially filled 4f electron shells of heavy rare earth components (such as Gd³⁺ and Dy³⁺) generate a localized strong magnetic moment, creating a spin-polarized gradient field in the coating. When an external load induces microcrack propagation, unpaired electrons at the crack tip experience spin-orbit coupling, locking their angular momentum and spin magnetic moment into specific quantum states. This hinders electrons from participating in the bond-breaking and recombination tunneling process, thereby inhibiting atomic migration at the crack tip. In the energy dissipation dimension, large atomic radius rare earths (such as La³⁺) induce anharmonic lattice vibrations, resonantly coupling their low-frequency phonon modes (<20 THz) with the high-frequency stretching modes (>30 THz) of the silicon-oxygen tetrahedron in the glass network. This coupling leads to a collective attenuation of the phonon group velocity, converting the impact kinetic energy into lattice thermal energy through nonradiative transitions, effectively dissipating the coherence of stress wave propagation. At the same time, variable price elements (such as Ce³⁺ / Ce 4 ⁺) Dynamic charge compensation wells are formed at the coating interface. These trap oxygen vacancy defect electrons generated by environmental corrosion through valence state fluctuations, blocking the extension of defect states across the band gap. This process continuously repairs the integrity of the interface's electronic structure and inhibits corrosion-induced microcrack nucleation. The four-layer cascade design further amplifies the quantum synergy effect: the first layer (Gd / Ce) provides a strong bonding foundation through high hybridization; the second layer (La / Ce) enhances phonon scattering through mass contrast; the third layer (Gd / La) constrains the crack propagation path with a magnetic moment gradient field; and the final layer (Dy / La) terminates the energy transfer channel with a strong spin-orbit coupling barrier.

[0049] Finally, the glass prepared in Example 1 was placed in a 400°C heat treatment furnace for 100 days (referred to as the high-temperature sample) and in a -70°C environment for 100 days (referred to as the low-temperature sample). The impact strength retention rates of the two were then tested. The retention rate of the high-temperature sample was 98%, and the retention rate of the low-temperature sample was 98%.

[0050] Example 2

[0051] High-strength glass includes: tempered glass substrate; Fe 90 Zr1Gd x Ce y layer, where x=3, y=6; in Fe 90 Zr1Gd x Ce y Fe on the layer 90 ZlUT w Ce z layer, where w=4, z=5; in Fe 90 ZlUT w Ce z Fe on the layer 90 Zr1Gd a La b layer, where a=3, b=6; and in Fe 90 Zr1Gd a La b Fe on the layer 90 ZlUT c La d layer, where c=4 and d=5.

[0052] Fe 90 Zr1Gd x Ce y The thickness of the layer is 500 nm. 90 ZlUT w Ce z The thickness of the layer is 290 nm. 90 Zr1Gd a La b The thickness of the layer is 500 nm. 90 ZlUT c La d The thickness of the layer was 180 nm.

[0053] Fe 90 Zr1Gd x Ce y The layer is formed by the following method: Fe 90 Zr1Gd x Ce y layer, the sputtering power source is a radio frequency power source, the sputtering voltage is 150 V, the sputtering power is 200 W, the sputtering temperature is 150° C., the sputtering atmosphere is an argon atmosphere, and the argon flow rate is 30 sccm.

[0054] Fe 90 ZlUT w Cez The layer is formed by the following method: Fe 90 ZlUT w Ce z layer, the sputtering power source is a radio frequency power source, the sputtering voltage is 50 V, the sputtering power is 100 W, the sputtering temperature is 150 ° C, the sputtering atmosphere is an argon atmosphere, and the argon flow rate is 30 sccm.

[0055] Fe 90 Zr1Gd a La b The layer is formed by the following method: Fe 90 Zr1Gd a La b layer, the sputtering power source is a radio frequency power source, the sputtering voltage is 50 V, the sputtering power is 100 W, the sputtering temperature is 150 ° C, the sputtering atmosphere is an argon atmosphere, and the argon flow rate is 30 sccm.

[0056] Fe 90 ZlUT c La d The layer is formed by the following method: Fe 90 ZlUT c La d layer, the sputtering power source is a radio frequency power source, the sputtering voltage is 150 V, the sputtering power is 150 W, the sputtering temperature is 150 ° C, the sputtering atmosphere is an argon atmosphere, and the argon flow rate is 30 sccm.

[0057] The XRD diffraction pattern of Example 2 can be found in Figure 5 . As shown in the figure, the alloy coating of Example 2 is also amorphous. The impact strength of Example 2 is 154 MPa, and the bending strength is 123 MPa. The glass made from Example 2 was placed in a 400°C heat treatment furnace for 100 days (referred to as high-temperature sample), and in a -70°C environment for 100 days (referred to as low-temperature sample). The impact strength retention rates of the two were then tested. The retention rate of the high-temperature sample was 98%, and the retention rate of the low-temperature sample was 98%.

[0058] Example 3

[0059] High-strength glass includes: tempered glass substrate; Fe 90 Zr1Gd x Ce y layer, where x=2, y=7; in Fe 90 Zr1Gd x Ce y Fe on the layer 90 ZlUT w Ce zlayer, where w=3, z=6; in Fe 90 ZlUT w Ce z Fe on the layer 90 Zr1Gd a La b layer, where a=2, b=7; and in Fe 90 Zr1Gd a La b Fe on the layer 90 ZlUT c La d layer, where c=3 and d=6.

[0060] Fe 90 Zr1Gd x Ce y The thickness of the layer is 400 nm. 90 ZlUT w Ce z The thickness of the layer is 250 nm. 90 Zr1Gd a La b The thickness of the layer is 400 nm. 90 ZlUT c La d The thickness of the layer was 160 nm.

[0061] Fe 90 Zr1Gd x Ce y The layer is formed by the following method: Fe 90 Zr1Gd x Ce y layer, the sputtering power supply is a radio frequency power supply, the sputtering voltage is 120 V, the sputtering power is 160 W, the sputtering temperature is 120 ° C, the sputtering atmosphere is an argon atmosphere, and the argon flow rate is 30 sccm.

[0062] Fe 90 ZlUT w Ce z The layer is formed by the following method: Fe 90 ZlUT w Ce z layer, the sputtering power supply is a radio frequency power supply, the sputtering voltage is 45 V, the sputtering power is 80 W, the sputtering temperature is 120 ° C, the sputtering atmosphere is an argon atmosphere, and the argon flow rate is 30 sccm.

[0063] Fe 90 Zr1Gd a La bThe layer is formed by the following method: Fe 90 Zr1Gd a La b layer, the sputtering power supply is a radio frequency power supply, the sputtering voltage is 45 V, the sputtering power is 80 W, the sputtering temperature is 120 ° C, the sputtering atmosphere is an argon atmosphere, and the argon flow rate is 30 sccm.

[0064] Fe 90 ZlUT c La d The layer is formed by the following method: Fe 90 ZlUT c La d The sputtering power supply is a radio frequency power supply, the sputtering voltage is 120V, the sputtering power is 120W, the sputtering temperature is 120°C, the sputtering atmosphere is an argon atmosphere, and the argon flow rate is 30sccm. The impact strength of Example 3 is 149MPa, and the bending strength is 118MPa. The glass prepared in Example 3 was placed in a 400°C heat treatment furnace for 100 days (referred to as the high-temperature sample) and in a -70°C environment for 100 days (referred to as the low-temperature sample). The impact strength retention rates of the two were then tested. The retention rate of the high-temperature sample was 99%, and the retention rate of the low-temperature sample was 98%.

[0065] Comparative Example 1

[0066] High-strength glass includes: tempered glass substrate; Fe 90 Zr1Gd x Ce y layer, where x=1, y=8; in Fe 90 Zr1Gd x Ce y Fe on the layer 90 ZlUT w Ce z layer, where w=2, z=7,; in Fe 90 ZlUT w Ce z Fe on the layer 90 ZlUT c La d Layers, where c=2 and d=7. Other process parameters were the same as in Example 1. Comparative Example 1 had an impact strength of 138 MPa and a flexural strength of 109 MPa. The decreased mechanical properties of this comparative example compared to the example may be due to the reduction in the heavy rare earth component (Gd³⁺), which weakened the ability to inhibit atomic migration at the crack tip. The reduction in the anharmonic vibrations induced by large atomic radius rare earths (such as La³⁺) reduced the ability to disperse the coherence of stress wave propagation. Furthermore, the lack of a film layer structure eliminated the coupling between the film layers.

[0067] Comparative Example 2

[0068] High-strength glass includes: tempered glass substrate; Fe 90 Zr1Gd x Ce y layer, where x=1, y=8; in Fe 90 Zr1Gd x Ce y Fe on the layer 90 ZlUT w Ce z Other process parameters are the same as those in Example 1. The impact strength of Comparative Example 2 is 132 MPa, and the flexural strength is 105 MPa.

[0069] Comparative Example 3

[0070] High-strength glass includes: tempered glass substrate; Fe 90 Zr1Gd x Ce y layer, where x=5, y=4; in Fe 90 Zr1Gd x Ce y Fe on the layer 90 ZlUT w Ce z layer, where w=5, z=4,; in Fe 90 ZlUT w Ce z Fe on the layer 90 Zr1Gd a La b layer, where a=5, b=4; and in Fe 90 Zr1Gd a La b Fe on the layer 90 ZlUT c La d Layer, where c = 5 and d = 4. Other process parameters were the same as in Example 1. Comparative Example 3 achieved an impact strength of 130 MPa and a flexural strength of 100 MPa. The change in atomic weight may lead to the appearance of certain intermediate phases in the alloy. These intermediate phases can significantly degrade the mechanical properties of the film, rendering the film ineffective in strengthening the tempered glass.

[0071] Comparative Example 4

[0072] Fe 90 Zr1Gd x Ce y The thickness of the layer is 600 nm. 90 ZlUTw Ce z The thickness of the layer is 600 nm. 90 Zr1Gd a La b The thickness of the layer is 600 nm. 90 ZlUT c La d The thickness of the layer was 600 nm. Other process parameters were the same as those in Example 1. Macro cracks appeared in the film layer of Comparative Example 4.

[0073] Comparative Example 5

[0074] Fe 90 Zr1Gd x Ce y The layer is formed by the following method: Fe 90 Zr1Gd x Ce y The sputtering power source was an RF power supply, the sputtering voltage was 300 V, the sputtering power was 400 W, the sputtering temperature was 150°C, the sputtering atmosphere was an argon atmosphere, and the argon flow rate was 30 sccm. Other process parameters were the same as those in Example 1. The impact strength of Comparative Example 5 was 131 MPa, and the flexural strength was 101 MPa. This may be due to cracks within the film layer, which prevented the film from reinforcing the tempered glass.

[0075] Comparative Example 6

[0076] Fe 90 ZlUT w Ce z The layer is formed by the following method: Fe 90 ZlUT w Ce z The sputtering power source was an RF power supply, the sputtering voltage was 150 V, the sputtering power was 300 W, the sputtering temperature was 150°C, the sputtering atmosphere was an argon atmosphere, and the argon flow rate was 30 sccm. Other process parameters were the same as those in Example 1. Comparative Example 6 exhibited an impact strength of 130 MPa and a flexural strength of 101 MPa. This may be due to cracks within the film layer, which prevented the film from reinforcing the tempered glass.

[0077] Comparative Example 7

[0078] The glass of Example 3 of the prior art CN109574499A was placed in a 400°C heat treatment furnace for 100 days (referred to as the high-temperature sample) and in a -70°C environment for 100 days (referred to as the low-temperature sample). The impact strength retention rates of the two were then tested. The retention rate of the high-temperature sample was 75%, and the retention rate of the low-temperature sample was 83%.

[0079] The foregoing descriptions of specific exemplary embodiments of the present invention are for purposes of illustration and description. These descriptions are not intended to limit the invention to the precise forms disclosed, and it is apparent that many variations and modifications are possible in light of the foregoing teachings. The exemplary embodiments have been selected and described for the purpose of explaining the specific principles of the invention and their practical application, thereby enabling those skilled in the art to realize and utilize a variety of exemplary embodiments of the invention and various options and modifications. The scope of the invention is intended to be defined by the claims and their equivalents.

Claims

1. A high-strength glass, characterized in that: The glass comprises: Tempered glass substrate; Fe on the tempered glass substrate 90 Zr1Gd x Ce y Layer, where x=1-3, y=6-8, and x+y=9; In the Fe 90 Zr1Gd x Ce y Fe on the layer 90 ZlUT w Ce z Layer, where w = 2-4, z = 5-7, and w + z = 9; In the Fe 90 ZlUT w Ce z Fe on the layer 90 Zr1Gd a La b Layer, where a=1-3, b=6-8, and a+b=9; and In the Fe 90 Zr1Gd a La b Fe on the layer 90 ZlUT c La d Layer, where c=2-4, d=5-7, and c+d=9.

2. The glass according to claim 1, wherein The Fe 90 Zr1Gd x Ce y The thickness of the layer is 300-500 nm.

3. The glass according to claim 1, wherein The Fe 90 ZlUT w Ce z The thickness of the layer is 200-290 nm.

4. The glass according to claim 1, wherein The Fe 90 Zr1Gd a La b The thickness of the layer is 300-500 nm.

5. The glass according to claim 1, wherein The Fe 90 ZlUT c La d The thickness of the layer is 150-180 nm.

6. The glass according to claim 1, wherein The Fe 90 Zr1Gd x Ce y The Fe layer is formed by the following method: magnetron sputtering is used to form the Fe 90 Zr1Gd x Ce y layer, the sputtering power supply is a radio frequency power supply, the sputtering voltage is 100-150V, the sputtering power is 140-200W, the sputtering temperature is 100-150°C, the sputtering atmosphere is an argon atmosphere, and the argon flow rate is 30-40sccm.

7. The glass according to claim 1, wherein The Fe 90 ZlUT w Ce z The Fe layer is formed by the following method: magnetron sputtering is used to form the Fe 90 ZlUT w Ce z layer, the sputtering power supply is a radio frequency power supply, the sputtering voltage is 40-50V, the sputtering power is 70-100W, the sputtering temperature is 100-150°C, the sputtering atmosphere is an argon atmosphere, and the argon flow rate is 30-40sccm.

8. The glass according to claim 1, wherein The Fe 90 Zr1Gd a La b The Fe layer is formed by the following method: magnetron sputtering is used to form the Fe 90 Zr1Gd a La b layer, the sputtering power supply is a radio frequency power supply, the sputtering voltage is 40-50V, the sputtering power is 70-100W, the sputtering temperature is 100-150°C, the sputtering atmosphere is an argon atmosphere, and the argon flow rate is 30-40sccm.

9. The glass according to claim 1, wherein The Fe 90 ZlUT c La d The Fe layer is formed by the following method: magnetron sputtering is used to form the Fe 90 ZlUT c La d layer, the sputtering power supply is a radio frequency power supply, the sputtering voltage is 100-150V, the sputtering power is 100-150W, the sputtering temperature is 100-150°C, the sputtering atmosphere is an argon atmosphere, and the argon flow rate is 30-40sccm.

10. A method for preparing high-strength glass, characterized in that: The method comprises: Tempered glass available; Fe is deposited on the surface of the tempered glass 90 Zr1Gd x Ce y Layer, where x=1-3, y=6-8, and x+y=9; In the Fe 90 Zr1Gd x Ce y Fe deposition on the surface of the layer 90 ZlUT w Ce z Layer, where w = 2-4, z = 5-7, and w + z = 9; In the Fe 90 ZlUT w Ce z Fe deposition on the surface of the layer 90 Zr1Gd a La b Layer, where a=1-3, b=6-8, and a+b=9; and In the Fe 90 Zr1Gd a La b Fe deposition on the surface of the layer 90 ZlUT c La d Layer, where c=2-4, d=5-7, and c+d=9.

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