Switch cabinet temperature rise prediction method, device and equipment and storage medium

Abstract

The invention discloses a switch cabinet temperature rise prediction method and device, equipment and a storage medium, and relates to the field of power transmission and transformation devices and equipment.The method comprises the steps that first heating power meeting a preset heating stable condition is determined based on the comprehensive heat dissipation coefficient of a target switch cabinet conductor, and the relation between temperature rise and power-on time is obtained in combination with a preset heat balance equation; constructing a first temperature rise prediction model; second heating power corresponding to the alternating current is determined, a temperature rise and current relation is established according to the first heating power, the second heating power and the heat dissipation coefficient, and a second model is constructed; circuit resistance is calculated through conductor resistance and contact resistance, the relation between temperature rise and contact resistance is determined by combining the two models, and a third model is constructed. And determining the three models as target temperature rise prediction models, establishing a target three-dimensional model based on the switch cabinet structure for verification, and performing temperature rise prediction after verification is passed. Therefore, the temperature rise risk of the switch cabinet can be accurately predicted.

Description

Technical Field

[0001] The present invention relates to the field of power transmission and transformation devices and equipment, and particularly relates to a method, device, equipment and storage medium for predicting the temperature rise of switch cabinets. Background Art

[0002] High-voltage switch cabinets play a crucial role in the power system, and the temperature rise test is an essential type test item for high-voltage switchgear.

[0003] In practical applications, there are many deficiencies in the existing technologies. Most of the temperature rise prediction methods are based on empirical judgment or simple data statistical analysis, lacking a comprehensive and in-depth study of the influencing factors of the temperature rise of switch cabinets. From the perspective of personnel patrol, due to the limited number of on-duty personnel for high-voltage switch cabinets, and the large number and wide distribution of switch cabinets, it is difficult to obtain sufficient and accurate operation data for temperature rise prediction by relying solely on manpower for patrol and temperature monitoring, resulting in limitations in the sample data of the prediction model, and thus affecting the accuracy of the prediction. In terms of the test power supply, currently, a single simple current-increasing coil is mainly used, and the multi-channel simultaneous measurement of switch cabinets mostly relies on the simple parallel connection between test power supplies. This method is prone to measurement errors during the long-term power-on temperature rise process, and it is difficult to accurately simulate the complex physical processes such as heat conduction and heat convection inside the switch cabinet. In addition, most of the existing prediction methods ignore the comprehensive influence of contact resistance changes, environmental factors, etc. on the temperature rise, resulting in a large deviation between the prediction results and the actual temperature rise situation, and unable to meet the requirements of the power system for accurate prediction of the temperature rise of switch cabinets.

[0004] Therefore, how to improve the accuracy rate of predicting the temperature rise of switch cabinets is a technical problem that needs to be solved urgently at present. Summary of the Invention

[0005] In view of this, the purpose of the present invention is to provide a method, device, equipment and storage medium for predicting the temperature rise of switch cabinets, which can improve the accuracy rate of predicting the temperature rise of switch cabinets. The specific solutions are as follows:

[0006] In a first aspect, the present application provides a method for predicting the temperature rise of a switch cabinet, including:

[0007] In a target switch cabinet, based on the comprehensive heat dissipation coefficient of the conductor in the target switch cabinet, determine the first heating power corresponding to the situation where the heating condition of the target switch cabinet satisfies a preset heating stability condition, and based on the first heating power and a preset heat balance equation for the target switch cabinet, determine the relationship between the temperature rise and the power-on time, so as to construct a corresponding first temperature rise prediction model;

[0008] Determine the second heating power corresponding to the alternating current flowing through the target switchgear cabinet, and based on the first heating power, the second heating power, and the comprehensive heat dissipation coefficient, determine the relationship between the temperature rise and the current to construct a corresponding second temperature rise prediction model;

[0009] Based on the conductor resistance and contact resistance of the target switchgear cabinet, determine the circuit resistance, and use the relationship between the circuit resistance, the relationship between the temperature rise and the energization time, and the relationship between the temperature rise and the current to determine the relationship between the temperature rise and the contact resistance to construct a corresponding third temperature rise prediction model;

[0010] Determine the first temperature rise prediction model, the second temperature rise prediction model, and the third temperature rise prediction model as the target temperature rise prediction model, and based on the structure of the target switchgear cabinet, determine the target three-dimensional model. Use the target three-dimensional model to verify the target temperature rise prediction model, and after the verification passes, use the target temperature rise prediction model to predict the temperature rise.

[0011] Optionally, the determining the first heating power corresponding to the case where the heating condition of the target switchgear cabinet satisfies the preset heating stability condition based on the comprehensive heat dissipation coefficient of the conductor in the target switchgear cabinet includes:

[0012] When the heating condition of the target switchgear cabinet satisfies the preset heating stability condition, then determine the target temperature rise of the corresponding target switchgear cabinet;

[0013] Based on the temperature and length of the conductor in the target switchgear cabinet, the temperature of the medium around the conductor, and a preset constant value, determine the comprehensive heat dissipation coefficient of the conductor in the target switchgear cabinet;

[0014] Use the target temperature rise, the comprehensive heat dissipation coefficient, and the heat dissipation area of the conductor to determine the first heating power.

[0015] Optionally, the determining the relationship between the temperature rise and the energization time based on the first heating power and the preset heat balance equation for the target switchgear cabinet includes:

[0016] Based on the first heating power and a preset time period, determine the total heat generation of the target switchgear cabinet, and use the comprehensive heat dissipation coefficient, the heat dissipation area, the temperature rise of the current target switchgear cabinet, and the preset time period to determine the total heat dissipation of the target switchgear cabinet;

[0017] Based on the specific heat capacity and the mass of the heating element of the target switchgear cabinet, and the preset time period, determine the total heat absorption of the target switchgear cabinet;

[0018] Use the preset heat balance equation for the target switchgear cabinet, the total heat generation, the total heat dissipation, and the total heat absorption to determine the relationship between the temperature rise and the energization time.

[0019] Optionally, determining the corresponding second heating power when an alternating current flows through the target switchgear cabinet, and determining the relationship between the temperature rise and the current based on the first heating power, the second heating power, and the comprehensive heat dissipation coefficient, includes:

[0020] When an alternating current flows through the conductor of the target switchgear cabinet, determine the corresponding target current, and determine the second heating power based on the target current, the preset current loss coefficient, and the resistance of the conductor;

[0021] Determine the relationship between the temperature rise and the current based on the first heating power, the second heating power, and the comprehensive heat dissipation coefficient.

[0022] Optionally, determining the circuit resistance based on the conductor resistance and the contact resistance of the target switchgear cabinet, and determining the relationship between the temperature rise and the contact resistance by using the relationship between the circuit resistance, the relationship between the temperature rise and the energization time, and the relationship between the temperature rise and the current, includes:

[0023] Determine the property coefficient of the surface material of the conductor, and determine the contact pressure and contact form between the conductors, so as to determine the contact resistance based on the property coefficient, the contact pressure, and the contact form;

[0024] Determine the circuit resistance based on the conductor resistance and the contact resistance of the target switchgear cabinet, and determine the relationship between the temperature rise and the contact resistance by using the relationship between the circuit resistance, the relationship between the temperature rise and the energization time, and the relationship between the temperature rise and the current.

[0025] Optionally, determining the target three-dimensional model based on the structure of the target switchgear cabinet, includes:

[0026] Determine the heat source and the temperature measurement points based on the structure of the target switchgear cabinet;

[0027] Determine each component in the target switchgear cabinet, and configure the thermal conductivity, density, and specific heat capacity for each component, and configure the current-carrying current and resistance parameters to obtain the corresponding configured components;

[0028] Determine the target three-dimensional model based on the heat source, the temperature measurement points, and the configured components.

[0029] Optionally, verifying the target temperature rise prediction model by using the target three-dimensional model, includes:

[0030] Conduct an experiment on the first temperature rise prediction model by using the target three-dimensional model, determine the first fitting curve of the temperature rise and the energization time based on the obtained first test result, and determine the first goodness of fit based on the first fitting curve;

[0031] When the first goodness of fit is greater than a preset goodness - of - fit threshold, it indicates that the verification of the first temperature - rise prediction model is passed;

[0032] Set a test current based on a preset rated current and a preset current ratio, and use the test current, the target three - dimensional model, and the first temperature - rise prediction model after passing the verification to conduct a test on the second temperature - rise prediction model. Determine a second fitting curve of temperature rise and current based on the obtained second test result, and determine a second goodness of fit based on the second fitting curve;

[0033] When the second goodness of fit is greater than the preset goodness - of - fit threshold, it indicates that the verification of the second temperature - rise prediction model is passed;

[0034] Use the target three - dimensional model and the second temperature - rise prediction model after passing the verification to conduct a test on the third temperature - rise prediction model, and determine the Pearson correlation coefficient between the temperature rise and the contact resistance based on the obtained third test result;

[0035] When the Pearson correlation coefficient is greater than a preset coefficient threshold, it indicates that the verification of the third temperature - rise prediction model is passed.

[0036] In a second aspect, the present application provides a temperature - rise prediction device for a switchgear, including:

[0037] A first model construction module, configured to, in a target switchgear, determine a first heating power corresponding to when the heat - generating condition of the target switchgear satisfies a preset heat - generating stability condition based on the comprehensive heat - dissipation coefficient of the conductor in the target switchgear, and determine the relationship between the temperature rise and the energization time based on the first heating power and a preset heat - balance equation for the target switchgear, so as to construct a corresponding first temperature - rise prediction model;

[0038] A second model construction module, configured to determine a second heating power corresponding to when an alternating current flows through the target switchgear, and determine the relationship between the temperature rise and the current based on the first heating power, the second heating power, and the comprehensive heat - dissipation coefficient, so as to construct a corresponding second temperature - rise prediction model;

[0039] A third model construction module, configured to determine a circuit resistance based on the conductor resistance and the contact resistance of the target switchgear, and determine the relationship between the temperature rise and the contact resistance by using the circuit resistance, the relationship between the temperature rise and the energization time, and the relationship between the temperature rise and the current, so as to construct a corresponding third temperature - rise prediction model;

[0040] The temperature rise prediction module is configured to determine the first temperature rise prediction model, the second temperature rise prediction model, and the third temperature rise prediction model as the target temperature rise prediction model, determine a target three-dimensional model based on the structure of the target switchgear cabinet, verify the target temperature rise prediction model using the target three-dimensional model, and perform temperature rise prediction using the target temperature rise prediction model after the verification passes.

[0041] In a third aspect, the present application provides an electronic device, including:

[0042] A memory for storing a computer program;

[0043] A processor for executing the computer program to implement the aforementioned switchgear cabinet temperature rise prediction method.

[0044] In a fourth aspect, the present application provides a computer-readable storage medium for storing a computer program; wherein, when the computer program is executed by a processor, the aforementioned switchgear cabinet temperature rise prediction method is implemented.

[0045] In this application, in the target switchgear cabinet, the first heating power corresponding to the case where the heating condition of the target switchgear cabinet meets the preset heating stability condition is determined based on the comprehensive heat dissipation coefficient of the conductor in the target switchgear cabinet. Then, based on the first heating power and the preset heat balance equation for the target switchgear cabinet, the relationship between the temperature rise and the energization time is determined to construct a corresponding first temperature rise prediction model. The second heating power corresponding to the case where the alternating current flows through the target switchgear cabinet is determined, and based on the first heating power, the second heating power, and the comprehensive heat dissipation coefficient, the relationship between the temperature rise and the current is determined to construct a corresponding second temperature rise prediction model. The circuit resistance is determined based on the conductor resistance and the contact resistance of the target switchgear cabinet, and using the circuit resistance, the relationship between the temperature rise and the energization time, and the relationship between the temperature rise and the current, the relationship between the temperature rise and the contact resistance is determined to construct a corresponding third temperature rise prediction model. The first temperature rise prediction model, the second temperature rise prediction model, and the third temperature rise prediction model are determined as the target temperature rise prediction model. Based on the structure of the target switchgear cabinet, a target three-dimensional model is determined, and the target three-dimensional model is used to verify the target temperature rise prediction model. After the verification is passed, the target temperature rise prediction model is used to predict the temperature rise. As can be seen from the above, in this application, in the target switchgear cabinet, first, based on the comprehensive heat dissipation coefficient of the conductor in the target switchgear cabinet, the first heating power corresponding to the case where the heating condition of the target switchgear cabinet meets the preset heating stability condition is determined. Then, in combination with the first heating power and the preset heat balance equation for the target switchgear cabinet, the relationship between the temperature rise and the energization time is clarified to construct the first temperature rise prediction model. Then, the second heating power corresponding to the case where the alternating current flows through the target switchgear cabinet is determined, and then based on the first heating power, the second heating power, and the comprehensive heat dissipation coefficient, the relationship between the temperature rise and the current is determined to construct the second temperature rise prediction model. After that, the circuit resistance is determined based on the conductor resistance and the contact resistance of the target switchgear cabinet, and using this circuit resistance, the obtained relationship between the temperature rise and the energization time, and the relationship between the temperature rise and the current, the relationship between the temperature rise and the contact resistance is determined to construct the third temperature rise prediction model. Finally, the first temperature rise prediction model, the second temperature rise prediction model, and the third temperature rise prediction model are determined as the target temperature rise prediction model. At the same time, based on the structure of the target switchgear cabinet, a target three-dimensional model is determined, and the target three-dimensional model is used to verify the target temperature rise prediction model. After the verification is passed, the target temperature rise prediction model is used to carry out the temperature rise prediction work. In this way, this application can accurately predict the temperature rise risk, thereby ensuring the safe and stable operation of the high-voltage switchgear cabinet to a certain extent. Description of the Drawings

[0046] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the accompanying drawings required for the description of the embodiments or the prior art. Obviously, the accompanying drawings in the following description are only the embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other accompanying drawings can also be obtained based on the provided drawings.

[0047] Figure 1 Flowchart of a method for predicting the temperature rise of a switchgear cabinet disclosed in the present application;

[0048] Figure 2 Graph of the temperature rise and time test data of a switchgear cabinet with a current of 1250A disclosed in the present application;

[0049] Figure 3 Graph of the temperature rise and time test data of a switchgear cabinet with a current of 750A disclosed in the present application;

[0050] Figure 4 Graph of the temperature rise and time test data of a switchgear cabinet with a current of 1000A disclosed in the present application;

[0051] Figure 5 Graph of the temperature rise and contact resistance test data of a switchgear cabinet disclosed in the present application;

[0052] Figure 6 Structural schematic diagram of a device for predicting the temperature rise of a switchgear cabinet disclosed in the present application;

[0053] Figure 7 Structural diagram of an electronic device disclosed in the present application. Detailed implementation manners

[0054] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts belong to the scope of protection of the present invention.

[0055] At present, most of the temperature rise prediction methods are based on empirical judgment or simple data statistical analysis, lacking a comprehensive and in-depth study of the influencing factors of the temperature rise of switchgear. From the perspective of personnel inspection, due to the limited number of on-duty personnel for high-voltage switchgear and the large number and wide distribution of switchgear, it is difficult to obtain sufficient and accurate operation data for temperature rise prediction solely by relying on manual inspection and temperature monitoring. This leads to limitations in the sample data of the prediction model, thereby affecting the accuracy of the prediction. In terms of the test power supply, currently, a single simple current-increasing coil is mainly used, and the multi-channel simultaneous measurement of the switchgear mostly relies on the simple parallel connection between test power supplies. During the long-term power-on temperature rise process, this method is prone to measurement errors and is difficult to accurately simulate the complex physical processes such as heat conduction and heat convection inside the switchgear. In addition, most of the existing prediction methods ignore the comprehensive influence of factors such as contact resistance change and environmental factors on the temperature rise, resulting in a large deviation between the prediction result and the actual temperature rise situation, and unable to meet the requirements of the power system for accurate prediction of the temperature rise of switchgear. Therefore, this application provides a switchgear temperature rise prediction method, device, equipment, and storage medium, which can improve the accuracy of predicting the temperature rise of switchgear.

[0056] See Figure 1 As shown, an embodiment of the present invention discloses a switchgear temperature rise prediction method, including:

[0057] Step S11: In the target switchgear, determine the first heating power corresponding to when the heating condition of the target switchgear satisfies the preset heating stability condition based on the comprehensive heat dissipation coefficient of the conductor in the target switchgear, and determine the relationship between the temperature rise and the power-on time based on the first heating power and the preset heat balance equation for the target switchgear, so as to construct a corresponding first temperature rise prediction model.

[0058] In this embodiment, in the target switchgear, it is first necessary to determine whether the heating condition of the target switchgear satisfies the preset heating stability condition. That is to say, when the heating condition of the target switchgear satisfies the preset heating stability condition, the target temperature rise of the corresponding target switchgear is determined . In actual operation, when the power-on time of the target switchgear is long enough, its working temperature will approach a stable value, and at this time, it can be considered that the heating stability condition is satisfied.

[0059] Next, it is necessary to determine the comprehensive heat dissipation coefficient of the conductor in the target switchgear. The comprehensive heat dissipation coefficient of the conductor in the target switchgear is determined based on the temperature and length of the conductor in the target switchgear, the temperature of the medium surrounding the conductor, and the preset constant value. Specifically, the maximum allowable temperature of the high-voltage switchgear is usually on the order of hundreds of degrees Celsius, and its heat dissipation process is mainly determined by convection and heat conduction, and the radiation power is relatively small. Therefore, when calculating the comprehensive heat dissipation coefficient of the conductor, the numerical calculation formula of the comprehensive heat dissipation coefficient of the conductor obtained according to the similarity theory can be used, omitting the heat radiation heat dissipation part. Among them, the formula for calculating the comprehensive heat dissipation coefficient of the conductor is as follows:

[0060] ;

[0061] Where, is the comprehensive heat dissipation coefficient of the conductor, is the temperature of the conductor, is the temperature of the medium surrounding the conductor, is the length of the conductor.

[0062] After obtaining the conductor's comprehensive heat dissipation coefficient, the first heating power is determined using the target temperature rise, the comprehensive heat dissipation coefficient, and the conductor's heat dissipation area. When the target switchgear heats up stably, according to the thermal balance principle, in this case, the switchgear's heating power and heat dissipation power reach a balance. At this point, the target temperature rise is known to be , the heat dissipation area of the conductor is , and the conductor comprehensive heat dissipation coefficient determined above , the first heating power can be obtained .

[0063] Then, the total heat generation of the target switch cabinet is determined based on the first heating power and the preset time period. ,in, For the preset time period. At the same time, using the comprehensive heat dissipation coefficient , heat dissipation area , the temperature rise of the current target switchgear And the total heat dissipation of the target switch cabinet is determined in the preset time period In addition, based on the specific heat capacity of the target switchgear and heating element quality And the preset time period determines the target switch cabinet temperature The heat absorbed when .

[0064] Finally, the relationship between the temperature rise and the energization time is determined using the preset heat balance equation for the target switchgear cabinet, the total heat generation, the total heat dissipation, and the total heat absorption. The preset heat balance equation is based on the principle of energy conservation, that is, the total heat generation of the target switchgear cabinet within a preset time period is equal to the sum of the total heat dissipation and the total heat absorption. Specifically, that is, substituting the total heat generation, the total heat dissipation, and the total heat absorption into the preset heat balance equation to obtain the heat balance equation after substituting specific information, and then substituting the first heating power into the heat balance equation after substituting specific information, thereby obtaining the relationship between the temperature rise and the energization time, which can be expressed by the following formula:

[0065] ;

[0066] In the formula, is the initial temperature rise, is the thermal time constant, is the energization time.

[0067] And, according to this relationship expression, a corresponding first temperature rise prediction model can be constructed, which can predict the temperature rise situation of the target switchgear cabinet according to the energization time, providing a certain basis for subsequent temperature rise prediction and risk assessment.

[0068] Step S12: Determine the second heating power corresponding to the alternating current flowing through the target switchgear cabinet, and determine the relationship between the temperature rise and the current based on the first heating power, the second heating power, and the comprehensive heat dissipation coefficient, so as to construct a corresponding second temperature rise prediction model.

[0069] In this embodiment, the change of the alternating current has a significant impact on the temperature rise of the switchgear cabinet, so it is necessary to further determine the situation when the alternating current flows through the target switchgear cabinet.

[0070] When the alternating current flows through the conductor of the target switchgear cabinet, the corresponding target current needs to be determined first. In the actual operation scenario of the switchgear cabinet, the target current can be obtained in various ways. For example, in the design stage, the target current can be initially estimated according to the rated current of the switchgear cabinet and the expected load situation; in the operation stage, the specific value of the target current can be measured in real time through a current sensor installed in the switchgear cabinet.

[0071] After determining the target current, the second heating power is determined based on the target current, the preset current loss coefficient, and the resistance of the conductor. When the alternating current flows in the conductor, heat is generated due to the resistance, and there is also an alternating current additional loss. Therefore, the calculation formula for the second heating power is , where is the alternating current additional loss coefficient (i.e., the preset current loss coefficient), ​is the conductor resistance.

[0072] Next, substitute the calculation formulas of the comprehensive heat dissipation coefficient and the second heat generation power into the calculation formula of the first heat generation power, so as to obtain the relationship between the temperature rise and the current as shown below:

[0073] ;

[0074] According to the relationship between the temperature rise and the current obtained from the above derivation, the corresponding second temperature rise prediction model can be constructed. And it should be noted that for the conductor part of the high-voltage switchgear, , and do not change with the current.

[0075] Step S13: Determine the circuit resistance based on the conductor resistance and the contact resistance of the target switchgear, and use the relationship between the circuit resistance, the relationship between the temperature rise and the energization time, and the relationship between the temperature rise and the current to determine the relationship between the temperature rise and the contact resistance, so as to construct the corresponding third temperature rise prediction model.

[0076] In this embodiment, during the actual operation of the switchgear, the contact resistance is a key factor affecting its temperature rise.

[0077] First of all, the contact resistance needs to be determined. Specifically, determine the property coefficient of the surface material of the conductor, and determine the contact pressure and contact form between the conductors, so as to determine the contact resistance based on the property coefficient, contact pressure and contact form. It should be noted that the contact resistance consists of the surface film resistance and the current constriction resistance. The constriction resistance is the resistance generated by the current constriction when the current flows between the contact points due to the unevenness of the contact surface. The surface film resistance is the resistance formed due to the oxidation or uncleanness of the contact surface, and a thin film with very poor conductivity covers the surface. Both the constriction resistance and the surface film resistance are difficult to calculate. Therefore, in this embodiment, the empirical formula method is adopted to perform equivalent calculation on the contact resistance. The calculation formula of the contact resistance is as follows:

[0078] ;

[0079] In the formula, is the contact resistance, and the unit is (i.e., ohm), is the material related to the contact resistance surface (that is, the property coefficient of the surface material), is the contact pressure, and the unit is N (i.e., Newton), is the contact form.

[0080] Next, determine the circuit resistance. The calculation formula of the circuit resistance is , where is the conductor resistance of the target switchgear. In actual switchgear, the contact resistance is often much greater than the conductor resistance itself, so changes in contact resistance have a more significant impact on circuit resistance.

[0081] After determining the circuit resistance, the relationship between temperature rise and contact resistance is determined using the relationship between circuit resistance, temperature rise, and energization time, as well as the relationship between temperature rise and current. Specifically, the formula for circuit resistance and the expression for the relationship between temperature rise and current are combined, and the result is substituted into the expression for the relationship between temperature rise and energization time. This yields the expression for the relationship between temperature rise and contact resistance shown below.

[0082] ;

[0083] Based on the relationship between temperature rise and contact resistance derived above, a corresponding third temperature rise prediction model can be constructed. This model can predict the temperature rise of the target switchgear based on the change in contact resistance when the power-on time and current are known.

[0084] Step S14: determine the first temperature rise prediction model, the second temperature rise prediction model, and the third temperature rise prediction model as target temperature rise prediction models, and determine a target three-dimensional model based on the structure of the target switchgear, use the target three-dimensional model to verify the target temperature rise prediction model, and after the verification is passed, use the target temperature rise prediction model to perform temperature rise prediction.

[0085] In this embodiment, the obtained first temperature rise prediction model, second temperature rise prediction model, and third temperature rise prediction model are determined as target temperature rise prediction models, and then a target three-dimensional model is determined based on the structure of the target switchgear.

[0086] In the process of determining the target three-dimensional model, specifically, a three-dimensional model is drawn according to the actual structure of the switch cabinet, including parts such as busbars, contacts, wiring parts and heat dissipation structures, to clarify the internal heat sources and the locations of temperature measurement points that need to be monitored. In addition, physical parameters such as thermal conductivity, density, and specific heat capacity are set for each component in the three-dimensional model. The current carrying current and resistance parameters are input according to the actual working conditions to determine the heat generated by each component due to the action of the current. Then, according to the current load, the heat generated by Joule heat and contact resistance is calculated and defined as a local heat source in the model. The initial temperature and external heat dissipation conditions are set to simulate the real working environment. In addition, the entire model needs to be meshed, and a denser mesh is used in key areas such as contact points and heat source areas to ensure simulation accuracy, select a suitable numerical solver, and set parameters such as steady-state analysis and time step.

[0087] Furthermore, for the first temperature rise prediction model, the target three-dimensional model is used to test the first temperature rise prediction model. During the test, the temperature change of each temperature measurement point is observed while simulating the switchgear under certain initial conditions as the power-on time increases. The temperature data at different power-on times are recorded to obtain the first test result. Based on these test results, the first fitting curve of the temperature rise and the power-on time is determined. Through the fitting curve, the change trend of the temperature rise over time can be observed more intuitively.

[0088] Next, the first goodness of fit is determined based on the first fitting curve. The goodness of fit is an index to measure the degree of coincidence between the fitting curve and the actual data. Common goodness of fit indices include values. The closer this value is to 1, the higher the degree of coincidence between the fitting curve and the actual data. When the first goodness of fit is greater than the preset goodness of fit threshold, it indicates that the verification of the first temperature rise prediction model is passed. For example, the preset goodness of fit threshold can be set to 0.9. When the value is greater than 0.9, it is considered that the first temperature rise prediction model can better describe the relationship between the temperature rise and the power-on time.

[0089] Correspondingly, for the second temperature rise prediction model, the test current is set based on the preset rated current and the preset current ratio. The preset rated current is the normal operating current specified during the design of the switchgear, and the preset current ratio can be 0.6, 0.8, and 1 to simulate different load conditions. The second temperature rise prediction model is tested using the test current, the target three-dimensional model, and the first temperature rise prediction model after verification. During the test, the power-on time is kept constant, the test current is changed, and the temperature change of each temperature measurement point is observed to obtain the second test result. Based on the second test result, the second fitting curve of the temperature rise and the current is determined. Similarly, the mathematical relationship between the temperature rise and the current is found through the fitting curve. The second goodness of fit is determined based on the second fitting curve. When the second goodness of fit is greater than the preset goodness of fit threshold, it indicates that the verification of the second temperature rise prediction model is passed. This means that the second temperature rise prediction model can accurately describe the temperature rise situation of the switchgear under different currents.

[0090] Finally, for the third temperature rise prediction model, the target three-dimensional model and the second temperature rise prediction model that has passed the verification are used to test the third temperature rise prediction model. During the test, the magnitude of the contact resistance is changed, and the temperature changes at each temperature measurement point are observed to obtain the third test result. Based on the third test result, the Pearson correlation coefficient (i.e., the Pearson correlation coefficient) between the temperature rise and the contact resistance is determined. The Pearson correlation coefficient is an index that measures the degree of linear correlation between two variables, and its value range is between -1 and 1. The closer the absolute value is to 1, the stronger the linear correlation between the two variables. When the Pearson correlation coefficient is greater than the preset coefficient threshold, it indicates that the third temperature rise prediction model has passed the verification. The preset coefficient threshold can be 0.9. When the Pearson correlation coefficient is greater than 0.9, it is considered that there is a strong linear correlation between the temperature rise and the contact resistance, and the third temperature rise prediction model can better describe this relationship.

[0091] After the first temperature rise prediction model, the second temperature rise prediction model, and the third temperature rise prediction model in the target temperature rise prediction model have all passed the verification, the target temperature rise prediction model can be used for temperature rise prediction. This target temperature rise prediction model comprehensively considers the relationships between the temperature rise and the power-on time, current, and contact resistance, and can more comprehensively and accurately predict the temperature rise situation of the switchgear.

[0092] As can be seen from the above, in this application, in the target switchgear, first, according to the comprehensive heat dissipation coefficient of the conductor in the target switchgear, the first heating power corresponding to the situation where the heat generation condition of the target switchgear meets the preset heat stability condition is determined. Then, by combining this first heating power and the preset heat balance equation for the target switchgear, the relationship between the temperature rise and the power-on time is clarified, thereby constructing the first temperature rise prediction model. Next, the second heating power corresponding to the alternating current flowing through the target switchgear is determined, and then, based on the first heating power, the second heating power, and the comprehensive heat dissipation coefficient, the relationship between the temperature rise and the current is determined, and thus the second temperature rise prediction model is constructed. After that, according to the conductor resistance and contact resistance of the target switchgear, the circuit resistance is determined, and using this circuit resistance, the relationship between the temperature rise and the power-on time and the relationship between the temperature rise and the current that have been obtained, the relationship between the temperature rise and the contact resistance is determined, and then the third temperature rise prediction model is constructed. Finally, the first temperature rise prediction model, the second temperature rise prediction model, and the third temperature rise prediction model are determined as the target temperature rise prediction model. At the same time, based on the structure of the target switchgear, the target three-dimensional model is determined, and this target three-dimensional model is used to verify the target temperature rise prediction model. After passing the verification, the target temperature rise prediction model is used to carry out the temperature rise prediction work. In this way, this application can accurately predict the temperature rise risk, thereby ensuring the safe and stable operation of the high-voltage switchgear to a certain extent.

[0093] The following combines Figure 2 、 Figure 3 、 Figure 4 and Figure 5The schematic diagram shown is used to specifically illustrate the model verification part in the technical solution of the embodiment of the present application.

[0094] Specifically, in a specific implementation manner, for the temperature rise time model (i.e., the first temperature rise prediction model), taking a switchgear with a rated voltage of 12 kV and a rated current of 1250 A as an example, the ambient temperature is set to 25 °C and the load current is 1250 A, and thermoelectric coupling simulation is carried out on the temperature rises of the plum blossom contacts, lower plum blossom contacts, busbar connection surface contacts, current transformer contacts, and circuit breaker contacts in the target three-dimensional model. During the simulation test process, a set of test data is recorded every 10 minutes. When the temperature rise at each measurement point does not change by more than 1 K within 1 h, it can be considered that the temperature rise reaches a stable state. The test results of the relationship between the temperature rise and time are as Figure 2 shown.

[0095] And, for the relationship expression between the temperature rise and the power-on time obtained in the foregoing embodiment, when is 0, that is, when the initial temperature rise is 0, the relationship expression between the temperature rise and the power-on time correspondingly becomes the following formula.

[0096] ;

[0097] Then, according to Figure 2 the test results obtained, based on the relationship expression between the temperature rise and the power-on time obtained above, curve fitting is performed on the measured data of each point in Figure 2 . Let the test stable temperature rise be , and the fitted stable temperature rise be . The fitting solution relationship formula and the goodness of fit are shown in Table 1 below.

[0098] Table 1

[0099]

[0100] It can be seen from Table 1 that the temperature rise data fully conforms to the above relationship expression between the temperature rise and the power-on time, and the goodness of fit is greater than 0.99 for all. The relationship formula obtained by fitting can accurately express the relationship between the temperature rise of the high-voltage switchgear and time. Therefore, through the above test process, it can be known that the temperature rise time model verification is passed.

[0101] In another specific implementation manner, for the relationship model between the temperature rise and the load current (i.e., the second temperature rise prediction model), in It is carried out on the basis of . Moreover, the load current of the switchgear during actual use usually does not exceed its rated current. Therefore, when verifying this model, most of the conditions for this simulation test are the same as those for verifying the temperature rise time model above, and the current conditions can be set to 750 A (i.e., 60% of the rated current), 1000 A (i.e., 80% of the rated current), and 1250 A (i.e., 100% of the rated current). According to the conclusion verified by the temperature rise and time relationship model, the curve fitting results of the measured data at each point are as shown in Figure 3 , Figure 4 and Figure 2 . The three figures represent different current conditions respectively. Figure 3 represents 750 A, Figure 4 represents 1000 A, while Figure 2 represents 1250 A. In addition, the fitting stable temperature rise values under this experimental condition are shown in Table 2 below.

[0102] Table 2

[0103]

[0104] Moreover, based on the above temperature rise simulation test results and in accordance with the relationship expression between temperature rise and current, using the data at each point of each conductive part in Table 2 under 3 kinds of load currents for continuous curve fitting, the fitting optimal solution relationship formula and goodness of fit as shown in Table 3 below can be obtained.

[0105] Table 3

[0106]

[0107] It can be seen from the data in Table 3 that the stable temperature rise experimental data under different currents are completely in line with the temperature rise and load current relationship model, and are basically the same, and the goodness of fit is greater than 0.99. The relationship formula obtained by fitting can accurately express the relationship between the stable temperature rise of the high-voltage switchgear and the current.

[0108] In the third specific implementation manner, the verification of the temperature rise and contact resistance relationship model (i.e., the third temperature rise prediction model) is carried out on the basis of the verification of the above two models. According to actual measurement and calculation, the initial value of the contact resistance of the upper petal contact is set to 10 (micro-ohm), the initial value of the contact resistance of the lower petal contact is set to 10 , the initial value of the contact resistance of the busbar tower joint surface is set to 15 , the initial value of the contact resistance of the current transformer is set to 7 , the initial value of the contact resistance of the circuit breaker is set to 5 , the initial value of the resistance of the loop itself is set to 3 , and the total resistance of the loop is 50 After verifying the relationship model between temperature rise and contact resistance, the relationship curves of the temperature rise of each contact and the contact resistance are respectively plotted as Figure 6 shown.

[0109] Meanwhile, the Pearson correlation coefficient method is used to verify the correctness of the established model. Generally, when the Pearson correlation coefficient is between 0.8 and 1, it represents a strong correlation between the similarity of two sets of function values. That is to say, if is satisfied, it proves that the relationship model between temperature rise and contact resistance can more accurately reflect the temperature rise situation of the switchgear. In the inequality, respectively represent the simulation values of the temperature rise of the upper plum blossom contact, the lower plum blossom contact, the busbar connection surface contact, the current transformer contact, and the circuit breaker contact, respectively represent the true values of the above temperature rise. Table 4 below shows the consistency verification results of this model.

[0110] Table 4

[0111]

[0112] It can be seen from Table 4 that in the simulation test, the stable temperature rise data under different contact resistances are more in line with the relationship model between temperature rise and contact resistance, and the Pearson correlation coefficient is greater than 0.99. The relationship formula obtained by fitting can accurately express the relationship between the stable temperature rise of the high-voltage switchgear and the contact resistance.

[0113] Correspondingly, as shown in Figure 6 the embodiments of the present application provide a switchgear temperature rise prediction device, including:

[0114] The first model construction module 11 is used to determine the first heating power corresponding to the preset heating stability condition satisfied by the heating situation of the target switchgear based on the comprehensive heat dissipation coefficient of the conductor in the target switchgear in the target switchgear, and determine the relationship between the temperature rise and the energization time based on the first heating power and the preset heat balance equation for the target switchgear, so as to construct the corresponding first temperature rise prediction model;

[0115] The second model construction module 12 is used to determine the second heating power corresponding to the alternating current flowing through the target switchgear, and determine the relationship between the temperature rise and the current based on the first heating power, the second heating power, and the comprehensive heat dissipation coefficient, so as to construct the corresponding second temperature rise prediction model;

[0116] The third model construction module 13 is used to determine the circuit resistance based on the conductor resistance and the contact resistance of the target switchgear, and determine the relationship between the temperature rise and the contact resistance by using the circuit resistance, the relationship between the temperature rise and the energization time, and the relationship between the temperature rise and the current, so as to construct the corresponding third temperature rise prediction model;

[0117] The temperature rise prediction module 14 is configured to determine the first temperature rise prediction model, the second temperature rise prediction model, and the third temperature rise prediction model as the target temperature rise prediction model, determine a target three-dimensional model based on the structure of the target switchgear, verify the target temperature rise prediction model using the target three-dimensional model, and perform temperature rise prediction using the target temperature rise prediction model after passing the verification.

[0118] As can be seen from the above, in this application, in the target switchgear, first, according to the comprehensive heat dissipation coefficient of the conductor in the target switchgear, the first heating power corresponding to the condition that the heating condition of the target switchgear meets the preset heating stability condition is determined. Then, combining this first heating power and the preset heat balance equation for the target switchgear, the relationship between the temperature rise and the energization time is clarified, thereby constructing the first temperature rise prediction model. Then, the second heating power corresponding to the alternating current flowing through the target switchgear is determined, and based on the first heating power, the second heating power, and the comprehensive heat dissipation coefficient, the relationship between the temperature rise and the current is determined, thereby constructing the second temperature rise prediction model. After that, the circuit resistance is determined according to the conductor resistance and contact resistance of the target switchgear, and using this circuit resistance, the obtained relationship between the temperature rise and the energization time, and the relationship between the temperature rise and the current, the relationship between the temperature rise and the contact resistance is determined, and then the third temperature rise prediction model is constructed. Finally, the first temperature rise prediction model, the second temperature rise prediction model, and the third temperature rise prediction model are determined as the target temperature rise prediction model. At the same time, a target three-dimensional model is determined based on the structure of the target switchgear, and the target temperature rise prediction model is verified using the target three-dimensional model. After passing the verification, the temperature rise prediction work is carried out using the target temperature rise prediction model. In this way, this application can accurately predict the temperature rise risk, thereby ensuring the safe and stable operation of the high-voltage switchgear to a certain extent.

[0119] In some specific embodiments, the first model construction module 11 specifically includes:

[0120] The temperature rise determination unit is configured to determine the target temperature rise of the corresponding target switchgear when the heating condition of the target switchgear meets the preset heating stability condition;

[0121] The first coefficient determination unit is configured to determine the comprehensive heat dissipation coefficient of the conductor in the target switchgear based on the temperature and length of the conductor in the target switchgear, the temperature of the medium around the conductor, and a preset constant value;

[0122] The first power determination unit is configured to determine the first heating power using the target temperature rise, the comprehensive heat dissipation coefficient, and the heat dissipation area of the conductor.

[0123] In some specific embodiments, the first model construction module 11 specifically includes:

[0124] A heat dissipation amount determination unit, configured to determine the total heat generation amount of the target switchgear based on the first heat generation power and a preset time period, and determine the total heat dissipation amount of the target switchgear by using the comprehensive heat dissipation coefficient, the heat dissipation area, the temperature rise of the current target switchgear, and the preset time period;

[0125] A heat absorption amount determination unit, configured to determine the total heat absorption amount of the target switchgear based on the specific heat capacity of the target switchgear, the mass of the heating element, and the preset time period;

[0126] A first relationship determination unit, configured to determine the relationship between the temperature rise and the energization time by using a preset heat balance equation for the target switchgear, the total heat generation amount, the total heat dissipation amount, and the total heat absorption amount.

[0127] In some specific embodiments, the second model construction module 12 specifically includes:

[0128] A second power determination unit, configured to determine a corresponding target current when an alternating current flows through the conductor of the target switchgear, and determine a second heat generation power based on the target current, a preset current loss coefficient, and the resistance of the conductor;

[0129] A second relationship determination unit, configured to determine the relationship between the temperature rise and the current based on the first heat generation power, the second heat generation power, and the comprehensive heat dissipation coefficient.

[0130] In some specific embodiments, the third model construction module 13 specifically includes:

[0131] A resistance determination unit, configured to determine the property coefficient of the surface material of the conductor, and determine the contact pressure and contact form between the conductors, so as to determine the contact resistance based on the property coefficient, the contact pressure, and the contact form;

[0132] A third relationship determination unit, configured to determine the circuit resistance based on the conductor resistance and the contact resistance of the target switchgear, and determine the relationship between the temperature rise and the contact resistance by using the circuit resistance, the relationship between the temperature rise and the energization time, and the relationship between the temperature rise and the current.

[0133] In some specific embodiments, the temperature rise prediction module 14 specifically includes:

[0134] An information determination unit, configured to determine heat sources and temperature measurement points based on the structure of the target switchgear;

[0135] A component configuration unit, configured to determine each component in the target switchgear, and configure a thermal conductivity coefficient, a density, and a specific heat capacity for each component, and configure a current-carrying current and a resistance parameter, so as to obtain corresponding configured components;

[0136] A model determination unit, configured to determine a target three-dimensional model based on the heat source, the temperature measurement points, and the configured component.

[0137] In some specific embodiments, the temperature rise prediction module 14 specifically includes:

[0138] A first goodness-of-fit determination unit, configured to use the target three-dimensional model to test the first temperature rise prediction model, determine a first fitting curve of the temperature rise and the energization time based on the obtained first test result, and determine a first goodness of fit based on the first fitting curve;

[0139] A first goodness-of-fit judgment unit, configured to indicate that the first temperature rise prediction model passes the verification when the first goodness of fit is greater than a preset goodness-of-fit threshold;

[0140] A second goodness-of-fit determination unit, configured to set a test current based on a preset rated current and a preset current ratio, and use the test current, the target three-dimensional model, and the first temperature rise prediction model after passing the verification to test the second temperature rise prediction model, determine a second fitting curve of the temperature rise and the current based on the obtained second test result, and determine a second goodness of fit based on the second fitting curve;

[0141] A second goodness-of-fit judgment unit, configured to indicate that the second temperature rise prediction model passes the verification when the second goodness of fit is greater than the preset goodness-of-fit threshold;

[0142] A second coefficient determination unit, configured to use the target three-dimensional model and the second temperature rise prediction model after passing the verification to test the third temperature rise prediction model, and determine a Pearson correlation coefficient between the temperature rise and the contact resistance based on the obtained third test result;

[0143] A coefficient judgment unit, configured to indicate that the third temperature rise prediction model passes the verification when the Pearson correlation coefficient is greater than a preset coefficient threshold.

[0144] Furthermore, an embodiment of the present application also discloses an electronic device, Figure 7 It is a structural diagram of an electronic device 20 shown according to an exemplary embodiment. The content in the figure should not be considered as any limitation to the scope of use of the present application. The electronic device 20 may specifically include: at least one processor 21, at least one memory 22, a power supply 23, a communication interface 24, an input / output interface 25, and a communication bus 26. Among them, the memory 22 is used to store a computer program, and the computer program is loaded and executed by the processor 21 to implement the relevant steps in the switchgear temperature rise prediction method disclosed in any of the foregoing embodiments. In addition, the electronic device 20 in this embodiment may specifically be an electronic computer.

[0145] In this embodiment, the power supply 23 is used to provide operating voltage for each hardware device on the electronic device 20; the communication interface 24 can create a data transmission channel between the electronic device 20 and external devices, and the communication protocol it follows can be any communication protocol applicable to the technical solution of this application, and no specific limitation is imposed on it here; the input / output interface 25 is used to obtain external input data or output data to the outside, and its specific interface type can be selected according to specific application needs, and no specific limitation is imposed here.

[0146] In addition, the memory 22, as a carrier for resource storage, can be a read-only memory, a random access memory, a magnetic disk, an optical disc, etc. The resources stored thereon can include an operating system 221, a computer program 222, etc., and the storage method can be temporary storage or permanent storage.

[0147] Among them, the operating system 221 is used to manage and control each hardware device and the computer program 222 on the electronic device 20, and it can be Windows Server, Netware, Unix, Linux, etc. In addition to the computer program that can be used to complete the switchgear temperature rise prediction method executed by the electronic device 20 disclosed in any of the foregoing embodiments, the computer program 222 can further include computer programs that can be used to complete other specific tasks.

[0148] Furthermore, this application also discloses a computer-readable storage medium for storing a computer program; wherein, when the computer program is executed by a processor, the switchgear temperature rise prediction method disclosed above is implemented. For the specific steps of this method, reference can be made to the corresponding content disclosed in the foregoing embodiments, and details are not described herein again.

[0149] In this specification, each embodiment is described in a progressive manner. The key point of each embodiment is to illustrate the differences from other embodiments. For the same or similar parts between each embodiment, reference can be made to each other. For the device disclosed in the embodiment, since it corresponds to the method disclosed in the embodiment, the description is relatively simple, and reference can be made to the description of the method part for related parts.

[0150] Those skilled in the art may further realize that the units and algorithm steps of each example described in combination with the embodiments disclosed herein can be implemented by electronic hardware, computer software, or a combination of both. To clearly illustrate the interchangeability of hardware and software, the composition and steps of each example have been generally described according to functions in the above description. Whether these functions are executed in a hardware or software manner depends on the specific application and design constraints of the technical solution. Those skilled in the art can use different methods to implement the described functions for each specific application, but such implementation should not be considered to exceed the scope of this application.

[0151] The steps of the methods or algorithms described in combination with the embodiments disclosed herein can be directly implemented by hardware, software modules executed by a processor, or a combination of both. The software modules can be placed in a random access memory (RAM), internal memory, read-only memory (ROM), electrically programmable ROM, electrically erasable programmable ROM, registers, hard disk, removable disk, CD-ROM, or any other form of storage medium known in the art.

[0152] Finally, it should also be noted that in this document, relational terms such as "first" and "second" are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the term "comprising", "including" or any other variant thereof is intended to cover non-exclusive inclusion, so that a process, method, article or device comprising a series of elements not only includes those elements, but also includes other elements not expressly listed, or elements inherent to such process, method, article or device. Without further limitation, an element defined by the statement "comprising an..." does not exclude the presence of additional identical elements in the process, method, article or device comprising the element.

[0153] The technical solutions provided in this application have been introduced in detail above. Specific examples are used herein to illustrate the principles and implementation manners of this application. The description of the above embodiments is only used to help understand the method and its core idea of this application; at the same time, for those of ordinary skill in the art, according to the idea of this application, there will be changes in the specific implementation manners and application scopes. In summary, the content of this specification should not be construed as a limitation to this application.

Claims

1. A method for predicting the temperature rise of a switchgear cabinet, characterized in that, Including: In the target switchgear cabinet, determine the first heating power corresponding to the heating condition of the target switchgear cabinet satisfying the preset heating stability condition based on the comprehensive heat dissipation coefficient of the conductor in the target switchgear cabinet, and determine the relationship between the temperature rise and the energization time based on the first heating power and the preset heat balance equation for the target switchgear cabinet, so as to construct a corresponding first temperature rise prediction model; Determine the second heating power corresponding to the alternating current flowing through the target switchgear cabinet, and determine the relationship between the temperature rise and the current based on the first heating power, the second heating power and the comprehensive heat dissipation coefficient, so as to construct a corresponding second temperature rise prediction model; Determine the circuit resistance based on the conductor resistance and contact resistance of the target switchgear cabinet, and determine the relationship between the temperature rise and the contact resistance by using the circuit resistance, the relationship between the temperature rise and the energization time, and the relationship between the temperature rise and the current, so as to construct a corresponding third temperature rise prediction model; Determine the first temperature rise prediction model, the second temperature rise prediction model and the third temperature rise prediction model as the target temperature rise prediction model, determine the target three-dimensional model based on the structure of the target switchgear cabinet, verify the target temperature rise prediction model by using the target three-dimensional model, and after the verification is passed, use the target temperature rise prediction model to predict the temperature rise.

2. The switchgear temperature rise prediction method according to claim 1, wherein The determining the first heating power corresponding to the heating condition of the target switchgear cabinet satisfying the preset heating stability condition based on the comprehensive heat dissipation coefficient of the conductor in the target switchgear cabinet includes: When the heating condition of the target switchgear cabinet satisfies the preset heating stability condition, then determine the target temperature rise of the corresponding target switchgear cabinet; Determine the comprehensive heat dissipation coefficient of the conductor in the target switchgear cabinet based on the temperature and length of the conductor in the target switchgear cabinet, the temperature of the medium around the conductor, and a preset constant value; Determine the first heating power by using the target temperature rise, the comprehensive heat dissipation coefficient and the heat dissipation area of the conductor.

3. The switchgear temperature rise prediction method according to claim 2, characterized in that The determining the relationship between the temperature rise and the energization time based on the first heating power and the preset heat balance equation for the target switchgear cabinet includes: Determine the total heat generation of the target switchgear cabinet based on the first heating power and a preset time period, and determine the total heat dissipation of the target switchgear cabinet by using the comprehensive heat dissipation coefficient, the heat dissipation area, the current temperature rise of the current target switchgear cabinet, and the preset time period; Determine the total heat absorption of the target switchgear cabinet based on the specific heat capacity and the mass of the heating element of the target switchgear cabinet, and the preset time period; Determine the relationship between the temperature rise and the energization time by using the preset heat balance equation for the target switchgear cabinet, the total heat generation, the total heat dissipation and the total heat absorption.

4. The switch cabinet temperature rise prediction method according to claim 1, characterized in that, The determining the second heating power corresponding to the alternating current flowing through the target switchgear cabinet, and determining the relationship between the temperature rise and the current based on the first heating power, the second heating power and the comprehensive heat dissipation coefficient includes: When the alternating current flows through the conductor of the target switchgear cabinet, then determine the corresponding target current, and determine the second heating power based on the target current, a preset current loss coefficient and the resistance of the conductor; Determine the relationship between the temperature rise and the current based on the first heating power, the second heating power, and the comprehensive heat dissipation coefficient.

5. The temperature rise prediction method for switchgear cabinets according to claim 1, characterized in that, Determining the circuit resistance based on the conductor resistance and the contact resistance of the target switchgear, and using the relationship between the circuit resistance, the temperature rise and the energization time, and the relationship between the temperature rise and the current to determine the relationship between the temperature rise and the contact resistance, includes: Determine the property coefficient of the surface material of the conductor, and determine the contact pressure and contact form between the conductors, so as to determine the contact resistance based on the property coefficient, the contact pressure, and the contact form; Determine the circuit resistance based on the conductor resistance and the contact resistance of the target switchgear, and use the relationship between the circuit resistance, the temperature rise and the energization time, and the relationship between the temperature rise and the current to determine the relationship between the temperature rise and the contact resistance.

6. The switchgear temperature rise prediction method according to any one of claims 1 to 5, characterized in that Determining the target three-dimensional model based on the structure of the target switchgear, includes: Determine the heat source and the temperature measurement points based on the structure of the target switchgear; Determine each component in the target switchgear, and configure the thermal conductivity, density, and specific heat capacity for each component, and configure the current-carrying current and resistance parameters to obtain the corresponding configured components; Determine the target three-dimensional model based on the heat source, the temperature measurement points, and the configured components.

7. The method for predicting the temperature rise of a switchgear cabinet according to claim 1, wherein Verifying the target temperature rise prediction model using the target three-dimensional model, includes: Conduct an experiment on the first temperature rise prediction model using the target three-dimensional model, determine the first fitting curve of the temperature rise and the energization time based on the obtained first test result, and determine the first goodness of fit based on the first fitting curve; When the first goodness of fit is greater than the preset goodness-of-fit threshold, it indicates that the verification of the first temperature rise prediction model is passed; Set the test current based on the preset rated current and the preset current ratio, and conduct an experiment on the second temperature rise prediction model using the test current, the target three-dimensional model, and the first temperature rise prediction model after passing the verification, determine the second fitting curve of the temperature rise and the current based on the obtained second test result, and determine the second goodness of fit based on the second fitting curve; When the second goodness of fit is greater than the preset goodness-of-fit threshold, it indicates that the verification of the second temperature rise prediction model is passed; Conduct an experiment on the third temperature rise prediction model using the target three-dimensional model and the second temperature rise prediction model after passing the verification, and determine the Pearson correlation coefficient between the temperature rise and the contact resistance based on the obtained third test result; When the Pearson correlation coefficient is greater than the preset coefficient threshold, it indicates that the verification of the third temperature rise prediction model is passed.

8. A temperature rise prediction device for a switchgear, characterized in that, Includes: A first model construction module, which is used to determine, in the target switchgear, the first heating power corresponding to when the heating condition of the target switchgear satisfies the preset heating stability condition based on the comprehensive heat dissipation coefficient of the conductors in the target switchgear, and determine the relationship between the temperature rise and the energization time based on the first heating power and the preset heat balance equation for the target switchgear, so as to construct the corresponding first temperature rise prediction model; The second model construction module is configured to determine the corresponding second heat generation power when the alternating current flows through the target switchgear cabinet, and determine the relationship between the temperature rise and the current based on the first heat generation power, the second heat generation power, and the comprehensive heat dissipation coefficient, so as to construct a corresponding second temperature rise prediction model; The third model construction module is configured to determine the circuit resistance based on the conductor resistance and the contact resistance of the target switchgear cabinet, and determine the relationship between the temperature rise and the contact resistance by using the relationship between the circuit resistance, the relationship between the temperature rise and the energization time, and the relationship between the temperature rise and the current, so as to construct a corresponding third temperature rise prediction model; The temperature rise prediction module is configured to determine the first temperature rise prediction model, the second temperature rise prediction model, and the third temperature rise prediction model as the target temperature rise prediction model, determine the target three-dimensional model based on the structure of the target switchgear cabinet, verify the target temperature rise prediction model by using the target three-dimensional model, and after the verification is passed, use the target temperature rise prediction model to predict the temperature rise.

9. An electronic device, characterized in that, Comprising: A memory for storing a computer program; A processor for executing the computer program to implement the switchgear cabinet temperature rise prediction method according to any one of claims 1 to 7.

10. A computer-readable storage medium, characterized in that, For storing a computer program; wherein, when the computer program is executed by the processor, the switchgear cabinet temperature rise prediction method according to any one of claims 1 to 7 is implemented.

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