Power cycle test method, device, equipment, medium and program product

Abstract

The invention provides a power cycle test method, device and equipment, a medium and a program product, and the method comprises the steps: heating an IGBT module through a power switch with preset power, and monitoring the shell temperature of the IGBT module through a thermocouple; when the shell temperature of the IGBT module reaches a target shell temperature, turning off the power switch to enable the IGBT module to enter a cooling stage; wherein the target shell temperature represents that the IGBT module reaches the target highest junction temperature; and when the IGBT module is in a cooling stage, monitoring the junction temperature of the IGBT module based on an electrical method to obtain junction temperature fluctuation of the IGBT module, and when the junction temperature of the IGBT module reaches a target lowest junction temperature, turning on a power switch to power up the module to enter a next cycle. Therefore, the test precision and reliability of the IGBT module are improved on the whole.

Description

Technical Field

[0001] The present invention relates to the technical field of the thermal performance of semiconductor discrete devices, and particularly relates to a power cycle test method, device, equipment, medium and program product. Background Art

[0002] IGBT (Insulated Gate Bipolar Transistor) modules have been widely used in fields such as electric vehicles, new energy power generation, rail transit, and industry, and their reliability has received extensive attention from manufacturers and scholars. Generally, IGBT modules are required to have a long design life. For example, the working life of IGBT modules in electric vehicles should reach 15 years or more, the working life of IGBT modules in wind turbines is required to reach 25 years, and the working life of IGBT modules in locomotive traction converters is even required to reach at least 30 years or more.

[0003] In order to evaluate the working life of IGBT modules, power cycle accelerated aging tests under different test conditions are usually carried out on IGBT modules to establish a life prediction model, and the Miner cumulative damage theorem is used to predict the life of devices in operation or designed devices.

[0004] Existing methods all obtain the test junction temperature of IGBT modules through the forward junction voltage drop by conventional electrical methods during the power cycle test. However, the junction temperature obtained by this method is the average junction temperature under current weighting, covering up the problem of temperature non-uniformity inside the IGBT module. In fact, the temperature inside the IGBT module is non-uniform, and its peak junction temperature has a greater impact on the reliability of the IGBT module.

[0005] Therefore, there is an urgent need to provide a power cycle test method that can overcome the above defects. Summary of the Invention

[0006] The present invention provides a power cycle test method, device, equipment, medium and program product, effectively overcoming the problem that the internal temperature distribution information of the module cannot be obtained in the conventional electrical method test, and improving the accuracy and reliability of module testing.

[0007] In a first aspect, the present invention provides a power cycle test method, and the method includes:

[0008] Heating an IGBT module with a power switch at a preset power, and monitoring the case temperature of the IGBT module through a thermocouple;

[0009] When the case temperature of the IGBT module reaches the target case temperature, turning off the power switch to enable the IGBT module to enter a cooling stage; wherein, the target case temperature represents that the IGBT module reaches the target maximum junction temperature.

[0010] When the IGBT module is in the cooling stage, monitor the junction temperature of the IGBT module based on the electro-optical method to obtain the junction temperature fluctuation of the IGBT module, and stop cooling when the junction temperature of the IGBT module reaches the target minimum junction temperature.

[0011] According to the power cycle test method provided by the present invention, the target case temperature is obtained by the following method:

[0012] Apply the same preset power to heat the IGBT module, and measure the peak junction temperature of the IGBT module to reach the target maximum junction temperature through an infrared thermal image;

[0013] When it is obtained that the peak junction temperature of the IGBT module reaches the target maximum junction temperature, measure the case temperature at the exact center of the base of the IGBT module through a thermocouple, which is the target case temperature.

[0014] According to the power cycle test method provided by the present invention, when the IGBT module is in the cooling stage, monitoring the junction temperature of the IGBT module based on the electro-optical method includes:

[0015] When the IGBT module is in the cooling stage, measure the junction voltage drop V CE ;

[0016] According to the junction voltage drop V CE of the IGBT module, convert it into the junction temperature of the IGBT module.

[0017] According to the power cycle test method provided by the present invention, the method further includes:

[0018] Repeat multiple cycle test periods until the IGBT module fails to obtain the life test result of the IGBT module under the preset power;

[0019] Wherein, the steps of one cycle test period include:

[0020] Heat the IGBT module with a power switch at the preset power, and monitor the case temperature of the IGBT module through a thermocouple;

[0021] When the case temperature of the IGBT module reaches the target case temperature, turn off the power switch to enable the IGBT module to enter the cooling stage; wherein, the target case temperature represents that the IGBT module reaches the target maximum junction temperature;

[0022] When the IGBT module is in the cooling stage, monitor the junction temperature of the IGBT module based on the electro-optical method to obtain the junction temperature fluctuation of the IGBT module, and stop cooling when the junction temperature of the IGBT module reaches the target minimum junction temperature.

[0023] According to the power cycle test method provided by the present invention, the preset power includes multiple ones, and the method further includes:

[0024] Based on the life test results under multiple preset powers, establish a life prediction model for the IGBT module;

[0025] According to the life prediction model, obtain the predicted life of the IGBT module under various working conditions.

[0026] According to the power cycle test method provided by the present invention, the power switch is a DC power control switch.

[0027] In a second aspect, the present invention provides a power cycle test device, and the device includes:

[0028] A first test module, configured to heat the IGBT module with a power switch at a preset power and monitor the case temperature of the IGBT module through a thermocouple;

[0029] A second test module, configured to turn off the power switch when the case temperature of the IGBT module reaches the target case temperature, so that the IGBT module enters the cooling stage; wherein, the target case temperature represents that the IGBT module reaches the target maximum junction temperature;

[0030] A third test module, configured to monitor the junction temperature of the IGBT module based on the electro-optical method when the IGBT module is in the cooling stage to obtain the junction temperature fluctuation of the IGBT module, and stop cooling when the junction temperature of the IGBT module reaches the target minimum junction temperature.

[0031] In a third aspect, the present invention provides an electronic device, including a memory, a processor, and a computer program stored on the memory and executable on the processor, and when the processor executes the program, it implements the power cycle test method as described in the first aspect.

[0032] In a fourth aspect, the present invention provides a non-transitory computer-readable storage medium, on which a computer program is stored, and when the computer program is executed by a processor, it implements the power cycle test method as described in the second aspect.

[0033] A power cycle test method, device, equipment, medium and program product provided by the present invention include: heating an IGBT module with a power switch at a preset power, and monitoring the case temperature of the IGBT module through a thermocouple; when the case temperature of the IGBT module reaches a target case temperature, turning off the power switch to enable the IGBT module to enter a cooling stage; wherein the target case temperature represents that the IGBT module reaches a target maximum junction temperature; when the IGBT module is in the cooling stage, monitoring the junction temperature of the IGBT module based on the electro-optical method to obtain the junction temperature fluctuation of the IGBT module, and stopping the cooling when the junction temperature of the IGBT module reaches a target minimum junction temperature. The present invention uses infrared thermal imaging technology to measure the internal temperature distribution of the IGBT module, thereby obtaining its peak junction temperature. At the same time, the case temperature of the IGBT module is monitored through a thermocouple, thus overcoming the deviation in the power cycle test results of the IGBT module due to the non-uniformity of the internal temperature of the IGBT module, and further making the establishment of the device life prediction model and life assessment inaccurate, and overall improving the accuracy and reliability of the power cycle test of the IGBT module. Description of the Drawings

[0034] In order to more clearly illustrate the technical solutions in the present invention or the prior art, the following will briefly introduce the drawings required for use in the description of the embodiments or the prior art. Obviously, the drawings in the following description are some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0035] Figure 1 It is a schematic flowchart of the power cycle test method provided by the present invention;

[0036] Figure 2 It is a schematic diagram of the change of test variables in a single cycle test period provided by the present invention;

[0037] Figure 3 It is a schematic diagram of the test variable time sequence provided by the present invention;

[0038] Figure 4 It is a schematic structural diagram of the power cycle test device provided by the present invention;

[0039] Figure 5 It is a schematic structural diagram of the electronic device provided by the present invention. Detailed Embodiments

[0040] To make the objectives, technical solutions and advantages of the present invention clearer, the technical solutions in the present invention will be clearly and completely described below with reference to the accompanying drawings in the present invention. Apparently, the described embodiments are some, but not all, of the embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments in the present invention without making creative efforts shall fall within the protection scope of the present invention.

[0041] It should be noted that the power cycle test simulates the junction temperature fluctuation process of the device in actual application by turning on and off the external load current, and through a certain degree of accelerated aging (provided that the device failure mechanism remains unchanged) to expose the weak points of the device package in advance. It has always been considered by the industrial and academic circles as the most important reliability test for evaluating the reliability of power device packages, and it is also the basis for establishing the device life prediction model and life assessment.

[0042] Two key parameters of the power cycle test are the maximum test junction temperature and the junction temperature fluctuation. Existing methods all obtain the test junction temperature of the IGBT module through the conventional electrical method by the forward junction voltage drop V CE to obtain the test junction temperature of the IGBT module. However, the junction temperature obtained by this method is the average junction temperature under current weighting, which masks the problem of temperature non-uniformity inside the IGBT module. In fact, the temperature inside the IGBT module is non-uniform, and its peak junction temperature has a greater impact on the module reliability. The existence of temperature non-uniformity leads to different degrees of errors in the life prediction model and life prediction established by simply using the average junction temperature for power cycle testing.

[0043] To solve the above problems, the present invention proposes a power cycle test method, which accurately obtains the internal temperature distribution of the module by using infrared thermal imaging technology, and then obtains the peak junction temperature of the IGBT module. At the same time, the case temperature of the IGBT module is monitored by a thermocouple. In this way, it overcomes the deviation of the IGBT module power cycle test results caused by the temperature non-uniformity inside the IGBT module, and further makes the establishment of the device life prediction model and life assessment inaccurate, and overall improves the accuracy and reliability of the IGBT module power cycle test.

[0044] Figure 1 The flow schematic diagram of the power cycle test method provided by the present invention is as Figure 1 shown. The present invention provides a power cycle test method, including:

[0045] Step 101, heat the IGBT module with a power switch at a preset power, and monitor the case temperature of the IGBT module through a thermocouple;

[0046] When performing the power test of the IGBT module, it is necessary to heat it to simulate the actual working state and monitor its temperature change.

[0047] In this embodiment, a power switch with a preset power is used to heat the IGBT module.

[0048] In one example, the power switch is a DC power control switch. That is, by connecting a controllable DC power supply, it can be used as a power switch. The on-off state of the IGBT is controlled by adjusting the output voltage or current of the power supply. In this way, heating and cooling of the IGBT module can be achieved.

[0049] In one example, a load current I is applied to the IGBT module Load , at this time the IGBT module is in the heating state, and the junction temperature of the IGBT module gradually rises with the heating duration.

[0050] On the other hand, in order to more accurately monitor the IGBT module, infrared thermal imaging technology is used to obtain the temperature distribution inside the IGBT module, and then the target case temperature matching the peak junction temperature of the IGBT module is obtained. At the same time, the case temperature of the IGBT module is monitored by a thermocouple.

[0051] Step 102, when the case temperature of the IGBT module reaches the target case temperature, turn off the power switch so that the IGBT module enters the cooling stage; wherein, the target case temperature represents that the IGBT module reaches the target maximum junction temperature;

[0052] In this embodiment, the target maximum junction temperature refers to the maximum junction temperature at which the peak junction temperature of the IGBT module meets the requirements of the power cycle test. The target case temperature refers to the case temperature of the IGBT module when the IGBT module reaches the target maximum junction temperature.

[0053] When the case temperature of the IGBT module reaches the target case temperature, it means that the IGBT has been heated to the target maximum junction temperature and can start to enter the cooling stage. At this time, it is necessary to promptly turn off the power switch, stop heating the IGBT module, and let it cool naturally.

[0054] Step 103, when the IGBT module is in the cooling stage, monitor the junction temperature of the IGBT module based on the electro-optical method to obtain the junction temperature fluctuation of the IGBT module, and stop cooling when the junction temperature of the IGBT module reaches the target minimum junction temperature.

[0055] Among them, the target minimum junction temperature refers to the minimum junction temperature at which the IGBT module cools to meet the requirements of the power cycle test.

[0056] The electrical method is a method for indirectly estimating the junction temperature of a device by measuring electrical parameters such as current and voltage. When monitoring the junction temperature of an IGBT module, a certain current or voltage can be introduced to the IGBT module, and then relevant electrical parameters such as conduction voltage drop and drain current are measured. According to the characteristics and calibration curve of the IGBT module, the measured electrical parameters can be converted into corresponding junction temperature values.

[0057] During the cooling stage, the electrical method monitoring can be continuously carried out to record the junction temperature data at each time point. By analyzing these data, the fluctuation of the junction temperature, that is, the change curve of the junction temperature over time, can be obtained. When the junction temperature drops to the target minimum junction temperature, the cooling process can be stopped, and the power switch is turned on to apply power to the IGBT module to enter the next power cycle test.

[0058] The power cycle test method provided by the embodiments of the present invention heats the IGBT module with a power switch at a preset power and monitors the case temperature of the IGBT module through a thermocouple; when the case temperature of the IGBT module reaches the target case temperature, the power switch is turned off to enable the IGBT module to enter the cooling stage; wherein the target case temperature represents that the IGBT module reaches the target maximum junction temperature; when the IGBT module is in the cooling stage, the junction temperature of the IGBT module is monitored based on the electrical method to obtain the junction temperature fluctuation of the IGBT module, and the cooling is stopped when the junction temperature of the IGBT module reaches the target minimum junction temperature. The present invention uses infrared thermal imaging technology to accurately obtain the internal temperature distribution of the module, and then obtains the peak junction temperature of the IGBT module. At the same time, the case temperature of the IGBT module is monitored through a thermocouple. In this way, the deviation of the power cycle test results of the IGBT module caused by the non-uniformity of the internal temperature of the IGBT module is overcome, and then the establishment of the device life prediction model and the life assessment are inaccurate, and the accuracy and reliability of the IGBT module power cycle test are improved as a whole.

[0059] On the basis of the above embodiments, as an optional embodiment, the target case temperature is obtained by the following method:

[0060] The IGBT module is heated by applying the same preset power, and the peak junction temperature of the IGBT module is measured by infrared thermal imaging to reach the target maximum junction temperature;

[0061] When the peak junction temperature of the IGBT module reaches the target maximum junction temperature, the case temperature at the center of the base of the IGBT module measured by the thermocouple is the target case temperature.

[0062] In this embodiment, the IGBT module is heated with the same preset power, and the internal temperature distribution of the IGBT module is measured by an infrared thermal imager. Specifically, the junction temperature of the IGBT module is measured by the infrared thermal imager during the heating process. Among them, the infrared thermal imager is a commonly used tool. The infrared thermal imager can measure the internal temperature of an object non-contact and generate a thermal image.

[0063] When the junction temperature of the IGBT module measured by the infrared thermal imager reaches the target maximum junction temperature, the temperature at the exact center of the base of the IGBT module measured by the thermocouple at this time is the target case temperature of the IGBT module. In this way, through the target case temperature, the heating and cooling operations can be accurately controlled during the subsequent test process.

[0064] Based on the above embodiments, as an optional embodiment, when the IGBT module is in the cooling stage, monitoring the junction temperature of the IGBT module based on the electro-optical method includes:

[0065] When the IGBT module is in the cooling stage, measure the forward voltage drop V CE ;

[0066] According to the forward voltage drop V CE of the IGBT module, convert it into the junction temperature of the IGBT module.

[0067] In this embodiment, in the cooling stage, the electrical parameter can be obtained by measuring the forward voltage drop V CE of the IGBT module. The forward voltage drop V CE refers to the voltage drop between the collector and emitter of the IGBT module when the IGBT module is in the on state. According to the measured forward voltage drop V CE , the forward voltage drop V CE can be converted into the corresponding junction temperature value by using a pre-established calibration curve or conversion relationship. In this way, the monitoring of the junction temperature of the IGBT module can be realized.

[0068] Based on the above embodiments, as an optional embodiment, the method further includes:

[0069] Repeatedly execute multiple cyclic test periods until the IGBT module fails to obtain the life test result of the IGBT module under the preset power;

[0070] Among them, the steps of one cyclic test period include:

[0071] Heat the IGBT module with a power switch at the preset power and monitor the case temperature of the IGBT module through a thermocouple;

[0072] When the case temperature of the IGBT module reaches the target case temperature, turn off the power switch so that the IGBT module enters the cooling stage; wherein, the target case temperature represents that the IGBT module reaches the target maximum junction temperature;

[0073] When the IGBT module is in the cooling stage, monitor the junction temperature of the IGBT module based on the electrical method to obtain the junction temperature fluctuation of the IGBT module, and stop cooling when the junction temperature of the IGBT module reaches the target minimum junction temperature.

[0074] Reference Figure 2 and Figure 3 , heat the IGBT module with a power switch at a preset power so that the current output by the IGBT module reaches the load current I Load , at this time the IGBT module is in the heating state, monitor the case temperature T of the IGBT module through a thermocouple c , when the case temperature T of the IGBT module c rises from T cmin to T cmax , it represents that the junction temperature of the IGBT module reaches the target maximum junction temperature T vjmax , record the turn-on time T of this heating stage on , after the junction temperature of the IGBT module reaches the target maximum junction temperature, turn off the power switch until the junction temperature of the IGBT module reaches the target minimum junction temperature, and record the turn-on time T of this heating stage off , thus completing a cycle test period T cycle = T on + T off .

[0075] Repeat multiple cycle test periods until the IGBT module fails, and draw a schematic diagram of the test variable time sequence of the IGBT module according to the life test results of the IGBT module under the preset power.

[0076] On the basis of the above embodiments, as an alternative embodiment, the preset power includes multiple, and the method further includes:

[0077] Based on the life test results under multiple preset powers, establish a life prediction model for the IGBT module;

[0078] According to the life prediction model, obtain the predicted life of the IGBT module under various operating conditions.

[0079] In this embodiment, according to the above power cycle test method, the life test results under multiple different preset power conditions are tested, such as the cycle period, the number of cycles, etc., and the life test results collected are statistically analyzed and calculated to determine the life characteristics and life attenuation law of the IGBT module.

[0080] Based on the data analysis results, a life prediction model is then established. Statistical methods, machine learning methods, or other suitable methods can be used to establish the model to describe the relationship between the preset power and the life of the IGBT module.

[0081] Finally, the established lifespan prediction model can be used to predict the lifespan of the IGBT module under various operating conditions. For example, by inputting parameters for different operating conditions, such as power, temperature, and current, the lifespan prediction model can be used to predict the module's expected lifespan under these conditions.

[0082] This invention uses infrared thermal imaging technology to accurately determine the internal temperature distribution of the module, thereby obtaining the peak junction temperature of the IGBT module. Simultaneously, thermocouples are used to monitor the IGBT module case temperature. This overcomes the problem of internal temperature non-uniformity leading to deviations in IGBT module power cycling test results, which can lead to inaccuracies in device lifetime prediction model development and lifetime assessment. This improves the accuracy and reliability of IGBT module power cycling testing overall. This also enhances the reliability of the lifetime prediction model's prediction results.

[0083] In a second aspect, a power cycle test device provided by the present invention is described. The power cycle test device described below and the power cycle test method described above can refer to each other. Figure 4 This is a schematic diagram of the structure of the power cycle test device provided by the present invention. Figure 4 As shown, the device includes:

[0084] A first test module 410 is configured to heat the IGBT module using a power switch of a preset power and monitor the case temperature of the IGBT module using a thermocouple;

[0085] A second test module 420 is configured to turn off the power switch when the case temperature of the IGBT module reaches a target case temperature, so that the IGBT module enters a cooling phase; wherein the target case temperature indicates that the IGBT module has reached a target maximum junction temperature;

[0086] The third test module 430 is used to monitor the junction temperature of the IGBT module based on an electrical method when the IGBT module is in the cooling stage to obtain the junction temperature fluctuation of the IGBT module, and stop cooling when the junction temperature of the IGBT module reaches the target minimum junction temperature.

[0087] The power cycle test device provided by the present invention heats the IGBT module with a power switch at a preset power and monitors the case temperature of the IGBT module through a thermocouple; when the case temperature of the IGBT module reaches the target case temperature, the power switch is turned off to enable the IGBT module to enter the cooling stage; wherein the target case temperature represents that the IGBT module reaches the target maximum junction temperature; when the IGBT module is in the cooling stage, the junction temperature of the IGBT module is monitored based on the electrical method to obtain the junction temperature fluctuation of the IGBT module, and the cooling is stopped when the junction temperature of the IGBT module reaches the target minimum junction temperature. The present invention uses infrared thermal imaging technology to accurately obtain the internal temperature distribution of the module, thereby obtaining the peak junction temperature of the IGBT module, and at the same time monitors the case temperature of the IGBT module through a thermocouple. In this way, the deviation of the power cycle test result of the IGBT module caused by the non-uniformity of the internal temperature of the IGBT module is overcome, and further the establishment of the device life prediction model and the life evaluation are inaccurate, and the accuracy and reliability of the power cycle test of the IGBT module are improved as a whole.

[0088] Based on the above embodiments, as an optional embodiment, the second test module 420 is further configured to heat the IGBT module with the same preset power, and measure that the peak junction temperature of the IGBT module reaches the target maximum junction temperature through infrared thermal imaging; when it is obtained that the peak junction temperature of the IGBT module reaches the target maximum junction temperature, the case temperature at the exact center of the base of the IGBT module measured by the thermocouple is the target case temperature.

[0089] Based on the above embodiments, as an optional embodiment, the third test module 430 is further configured to measure the junction voltage drop V of the IGBT module when the IGBT module is in the cooling stage CE ; according to the junction voltage drop V of the IGBT module CE , convert it into the junction temperature of the IGBT module.

[0090] Based on the above embodiments, as an optional embodiment, it further includes a cycle test module, which is configured to repeatedly execute multiple cycle test periods until the IGBT module fails, so as to obtain the life test result of the IGBT module under the preset power;

[0091] Wherein, the steps of one cycle test period include:

[0092] Heat the IGBT module with a power switch at a preset power, and monitor the case temperature of the IGBT module; when the case temperature of the IGBT module measured by the thermocouple reaches the target case temperature, turn off the power switch so that the IGBT module enters the cooling stage; wherein, the target case temperature represents that the IGBT module reaches the target maximum junction temperature; when the IGBT module is in the cooling stage, monitor the junction temperature of the IGBT module based on the electro-optical method to obtain the junction temperature fluctuation of the IGBT module, and stop cooling when the junction temperature of the IGBT module reaches the target minimum junction temperature.

[0093] Based on the above embodiments, as an optional embodiment, it further includes a life monitoring module for establishing a life prediction model of the IGBT module based on the life test results under multiple preset powers; and obtaining the predicted life of the IGBT module under various working conditions according to the life prediction model.

[0094] In a third aspect, Figure 5 An example of a schematic physical structure diagram of an electronic device is shown as Figure 5 As shown, the electronic device may include: a processor 510, a communication interface 520, a memory 530, and a communication bus 540. Among them, the processor 510, the communication interface 520, and the memory 530 complete mutual communication through the communication bus 540. The processor 510 can call the logical instructions in the memory 530 to execute the power cycle test method, which includes: heating the IGBT module with a power switch at a preset power, and monitoring the case temperature of the IGBT module through a thermocouple; when the case temperature of the IGBT module reaches the target case temperature, turn off the power switch so that the IGBT module enters the cooling stage; wherein, the target case temperature represents that the IGBT module reaches the target maximum junction temperature; when the IGBT module is in the cooling stage, monitor the junction temperature of the IGBT module based on the electro-optical method to obtain the junction temperature fluctuation of the IGBT module, and stop cooling when the junction temperature of the IGBT module reaches the target minimum junction temperature.

[0095] In addition, when the logical instructions in the above-mentioned memory 530 are implemented in the form of software functional units and sold or used as independent products, they can be stored in a computer-readable storage medium. Based on such an understanding, the technical solution of the present invention, in essence, or the part that contributes to the prior art, or a part of the technical solution, can be embodied in the form of a software product. The computer software product is stored in a storage medium and includes several instructions for causing a computer device (which may be a personal computer, a server, or a network device, etc.) to execute all or part of the steps of the methods described in various embodiments of the present invention. The aforementioned storage medium includes: various media that can store program codes, such as USB flash drives, mobile hard disks, read-only memories (ROM, Read-Only Memory), random access memories (RAM, Random Access Memory), magnetic disks, or optical discs.

[0096] Fourthly, the present invention further provides a computer program product. The computer program product includes a computer program that can be stored on a non-transitory computer-readable storage medium. When the computer program is executed by a processor, the computer can execute the power cycle test method provided by the above-mentioned various methods. The method includes: heating the IGBT module with a power switch at a preset power and monitoring the case temperature of the IGBT module through a thermocouple; when the case temperature of the IGBT module reaches the target case temperature, turning off the power switch to enable the IGBT module to enter the cooling stage; wherein the target case temperature represents that the IGBT module reaches the target maximum junction temperature; when the IGBT module is in the cooling stage, monitoring the junction temperature of the IGBT module based on the electrical method to obtain the junction temperature fluctuation of the IGBT module, and stopping the cooling when the junction temperature of the IGBT module reaches the target minimum junction temperature.

[0097] Fifthly, the present invention further provides a non-transitory computer-readable storage medium, on which a computer program is stored. When the computer program is executed by a processor, it realizes the power cycle test method provided by the above-mentioned various methods. The method includes: heating the IGBT module with a power switch at a preset power and monitoring the case temperature of the IGBT module through a thermocouple; when the case temperature of the IGBT module reaches the target case temperature, turning off the power switch to enable the IGBT module to enter the cooling stage; wherein the target case temperature represents that the IGBT module reaches the target maximum junction temperature; when the IGBT module is in the cooling stage, monitoring the junction temperature of the IGBT module based on the electrical method to obtain the junction temperature fluctuation of the IGBT module, and stopping the cooling when the junction temperature of the IGBT module reaches the target minimum junction temperature.

[0098] The device embodiments described above are merely illustrative. The units described as separate components may or may not be physically separated, and the components shown as units may or may not be physical units, that is, they may be located in one place or distributed to multiple network units. Some or all of the modules can be selected according to actual needs to achieve the purpose of the solution of this embodiment. A person of ordinary skill in the art can understand and implement it without creative work.

[0099] Through the description of the above embodiments, those skilled in the art can clearly understand that each embodiment can be implemented by means of software plus a necessary general hardware platform, and of course, it can also be implemented by hardware. Based on such an understanding, the essence of the above technical solution, or the part that contributes to the prior art, can be embodied in the form of a software product, which can be stored in a computer-readable storage medium, such as ROM / RAM, magnetic disk, optical disk, etc., and includes several instructions for causing a computer device (which can be a personal computer, a server, or a network device, etc.) to execute the methods described in each embodiment or some parts of the embodiments.

[0100] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and are not intended to limit them. Although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that they can still modify the technical solutions recorded in the foregoing embodiments or equivalently replace some of the technical features; and these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A power cycle test method, characterized in that, The method includes: Heating the IGBT module with a power switch at a preset power, and monitoring the case temperature of the IGBT module through a thermocouple; When the case temperature of the IGBT module reaches the target case temperature, turning off the power switch to enable the IGBT module to enter the cooling stage; wherein the target case temperature represents that the IGBT module reaches the target maximum junction temperature; When the IGBT module is in the cooling stage, monitoring the junction temperature of the IGBT module based on the electro-optical method to obtain the junction temperature fluctuation of the IGBT module, and stopping the cooling when the junction temperature of the IGBT module reaches the target minimum junction temperature.

2. The power cycle test method according to claim 1, characterized in that, The target case temperature is obtained by the following method: Heating the IGBT module with the same preset power, and measuring the peak junction temperature of the IGBT module through an infrared thermal imager to reach the target maximum junction temperature; When it is obtained that the peak junction temperature of the IGBT module reaches the target maximum junction temperature, the case temperature at the center of the base of the IGBT module measured by the thermocouple is the target case temperature.

3. The power cycle test method according to claim 1, characterized in that When the IGBT module is in the cooling stage, monitoring the junction temperature of the IGBT module based on the electro-optical method includes: When the IGBT module is in the cooling stage, measure the forward voltage drop V of the IGBT module CE ; According to the forward voltage drop V of the IGBT module CE , the junction temperature of the IGBT module is converted.

4. The power cycle test method according to claim 1, wherein The method further includes: Repeatedly executing multiple cyclic test periods until the IGBT module fails to obtain the life test result of the IGBT module under the preset power; Wherein, the steps of one cyclic test period include: Heating the IGBT module with a power switch at a preset power, and monitoring the case temperature of the IGBT module through a thermocouple; When the case temperature of the IGBT module reaches the target case temperature, turning off the power switch to enable the IGBT module to enter the cooling stage; wherein the target case temperature represents that the IGBT module reaches the target maximum junction temperature; When the IGBT module is in the cooling stage, monitoring the junction temperature of the IGBT module based on the electro-optical method to obtain the junction temperature fluctuation of the IGBT module, and stopping the cooling when the junction temperature of the IGBT module reaches the target minimum junction temperature.

5. The power cycle test method according to claim 4, wherein There are multiple preset powers, and the method further includes: Based on the life test results under multiple preset powers, establishing a life prediction model of the IGBT module; According to the life prediction model, obtaining the predicted life of the IGBT module under various working conditions.

6. The power cycle test method according to claim 1, wherein The power switch is a DC power control switch.

7. A power cycle test device, characterized in that, The device includes: A first test module for heating the IGBT module with a power switch at a preset power and monitoring the case temperature of the IGBT module through a thermocouple; A second test module for turning off the power switch when the case temperature of the IGBT module reaches the target case temperature to enable the IGBT module to enter the cooling stage; wherein the target case temperature represents that the IGBT module reaches the target maximum junction temperature; A third test module for monitoring the junction temperature of the IGBT module based on the electro-optical method when the IGBT module is in the cooling stage to obtain the junction temperature fluctuation of the IGBT module, and stopping the cooling when the junction temperature of the IGBT module reaches the target minimum junction temperature.

8. An electronic device, comprising a memory, a processor, and a computer program stored on the memory and executable on the processor, characterized in that, When the processor executes the program, it implements the power cycle test method according to any one of claims 1 to 6.

9. A non-transitory computer-readable storage medium having a computer program stored thereon, characterized in that, When the computer program is executed by a processor, it implements the power cycle test method according to any one of claims 1 to 6.

10. A computer program product, comprising a computer program, characterized in that, When the computer program is executed by a processor, it implements the power cycle test method according to any one of claims 1 to 6.

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