Solar cell and screen printing plate for manufacturing solar cell

Abstract

The invention relates to a solar cell and a screen printing plate for manufacturing the solar cell. The solar cell comprises a first grid line column and a second grid line column which are alternately arranged along a first direction; the first grid line array comprises a plurality of first fine grids arranged along a second direction, the second grid line array comprises a plurality of second fine grids arranged along the second direction, in the adjacent first grid line array and the second grid line array, the first fine grids and the second fine grids are arranged in a staggered manner in the first direction, the first grid line array and the second grid line array have an overlapping region, and the overlapping region is located between the first fine grids and the second fine grids. A part of the first fine grid and a part of the second fine grid are both located in the overlapping region; and the first fine grids and the second fine grids in the overlapping region are connected to the corresponding main grids. Therefore, according to the solar cell and the screen printing plate for manufacturing the solar cell provided by the invention, the alignment difficulty between the first fine grids and the second fine grids of the adjacent first grid line array and the second grid line array and the main grids can be reduced.

Description

Technical Field

[0001] This application relates to the field of photovoltaic technology, and particularly to solar cells and screen printing stencils for manufacturing solar cells. Background Art

[0002] A solar cell, also known as a photovoltaic cell, is a semiconductor device that directly converts the light energy of the sun into electrical energy. Since it is a green and environmentally friendly product that does not cause environmental pollution and solar energy is a renewable resource, solar cells are a new type of battery with broad development prospects.

[0003] In related technologies, a solar cell includes a semiconductor substrate, on which a plurality of fine grids are provided. The plurality of fine grids extend along a first direction and are arranged at intervals along a second direction. The same fine grid includes a plurality of sub-fine grids arranged at intervals along the first direction, and adjacent two sub-fine grids are connected by a main grid. However, the alignment difficulty between the connected sub-fine grids and the main grid needs to be reduced. Summary of the Invention

[0004] Based on this, it is necessary to provide a solar cell and a screen printing stencil for manufacturing a solar cell, which can reduce the alignment difficulty between the first fine grids and the second fine grids of the adjacent first grid line columns and the second grid line columns and the main grid.

[0005] In a first aspect, an embodiment of the present application provides a solar cell, which includes:

[0006] A plurality of first grid line columns and a plurality of second grid line columns, the first grid line columns and the second grid line columns are alternately arranged along a first direction; the first grid line columns include a plurality of first fine grids arranged along a second direction, and the second grid line columns include a plurality of second fine grids arranged along a second direction. In adjacent first grid line columns and second grid line columns, the first fine grids and the second fine grids are misaligned in the first direction. The first grid line columns and the second grid line columns have an overlapping area, and parts of the first fine grids and parts of the second fine grids are both located in the overlapping area;

[0007] A main grid, the adjacent first grid line columns and second grid line columns are connected by the main grid. In the adjacent first grid line columns and second grid line columns, and the main grid connecting the adjacent first grid line columns and second grid line columns, the first fine grids and the second fine grids located in the overlapping area are connected to the main grid.

[0008] The solar cell provided by the embodiment of the present application uses the overlapping part of the first fine grid and the second fine grid of the adjacent first grid line column and the second grid line column in the positive projection in the second direction to be connected to the main grid, so that only alignment along the first direction is required between the main grid and the first fine grid and the second fine grid, and alignment along the second direction is not required between the main grid and the first fine grid and the second fine grid, so that only one-way alignment is required between the main grid and the first fine grid and the second fine grid, which can reduce the alignment difficulty between the main grid and the first fine grid and the second fine grid. In addition, there is no need to use a "centipede foot" shaped overlapping structure to ensure the overlap between the main grid and the first fine grid and the second fine grid. By eliminating the overlapping structure, the consumption of the main grid paste can be reduced, and the shading loss caused by the overlapping structure can be avoided, which is beneficial to improving the conversion efficiency of the solar cell.

[0009] In one embodiment, in the adjacent first grid line column and the second grid line column, and the main grid connected between the adjacent first grid line column and the second grid line column, the size of the overlapping area in the first direction is greater than or equal to the size of the main grid in the first direction.

[0010] In one embodiment, the solar cell includes:

[0011] A plurality of grid line groups arranged along the first direction; each grid line group includes a first grid line column and a second grid line column arranged along the first direction;

[0012] In two adjacent grid line groups, the size of the overlapping area in the first direction of the first grid line column of one grid line group and the second grid line column of the other grid line group is the first size;

[0013] In the same grid line group, the size of the overlapping area in the first direction of the first grid line column and the second grid line column is the second size;

[0014] The second size is greater than the first size.

[0015] In one embodiment, the first size is less than half of the size of any one of the first fine grid and the second fine grid in the first direction; and / or,

[0016] The second size is greater than half of the size of any one of the first fine grid and the second fine grid in the first direction.

[0017] In one embodiment, the solar cell includes a first intermediate area and two first edge areas, and the two first edge areas are located on both sides of the first intermediate area along the first direction;

[0018] The size of the overlapping area in the first direction of the adjacent first grid line column and the second grid line column located in the first edge area is greater than or equal to the size of the overlapping area in the first direction of the adjacent first grid line column and the second grid line column located in the first intermediate area.

[0019] In one embodiment, in adjacent first gate line columns and second gate line columns, the first fine gate and the second fine gate are arranged alternately along the second direction;

[0020] The solar cell includes a second intermediate region and two second edge regions, and the two second edge regions are disposed on both sides of the second intermediate region along the second direction;

[0021] The distance between the adjacent first fine gate and the second fine gate in the second edge region along the second direction is less than or equal to the distance between the adjacent first fine gate and the second fine gate in the second intermediate region along the second direction.

[0022] In one embodiment, the shape of the main gate is linear and extends along the second direction.

[0023] In one embodiment, in adjacent first gate line columns and second gate line columns, and in the main gate connecting the adjacent first gate line columns and second gate line columns, the first fine gate and the second fine gate are arranged alternately along the second direction. The main gate includes a plurality of sub-main gates, and the plurality of sub-main gates are arranged along the second direction. The extending directions of two adjacent sub-main gates intersect and are connected to each other. There is a sub-main gate connected between the adjacent first fine gate and the second fine gate, and the distance between the sub-main gate and the first fine gate along the second direction gradually decreases from the direction close to the second fine gate end of the first fine gate to the direction far from the second fine gate end.

[0024] In one embodiment, the extending direction of the sub-main gate intersects obliquely with the first direction. The sub-main gate includes a first end and a second end in the extending direction. In the adjacent first gate line columns and second gate line columns, and in the main gate connecting the adjacent first gate line columns and second gate line columns, the first end is connected to the first fine gate, the second end is connected to the second fine gate, and the first end is obliquely arranged relative to the second end in the direction close to the end of the first fine gate far from the second fine gate.

[0025] In one embodiment, in the same first fine gate, the dimension of the first fine gate along the second direction is the same everywhere in the first direction; and / or,

[0026] In the same second fine gate, the dimension of the second fine gate along the second direction is the same everywhere in the first direction.

[0027] In one embodiment, the first fine gate includes a first overlapping section, and the first overlapping section is located in the overlapping region. At least part of the dimension of the first overlapping section along the second direction is greater than the dimension of the rest of the first fine gate along the second direction; and / or,

[0028] The second fine gate includes a second overlapping section, and the second overlapping section is located in the overlapping region. At least part of the dimension of the second overlapping section along the second direction is greater than the dimension of the rest of the second fine gate along the second direction.

[0029] In one embodiment, the number of main gates connected between adjacent first gate line columns and second gate line columns is multiple, and the multiple main gates are arranged at intervals in the first direction.

[0030] In one embodiment, in adjacent first gate line columns and second gate line columns, the first fine gates and the second fine gates are arranged alternately in the second direction. In at least some adjacent two first fine gates and the second fine gate located between the two adjacent first fine gates, the distance between the first fine gate and the second fine gate is equal to half of the distance between the two first fine gates.

[0031] In one embodiment, in adjacent first gate line columns and second gate line columns, the first fine gates and the second fine gates are arranged alternately in the second direction. In at least some adjacent two second fine gates and the first fine gate located between the two adjacent second fine gates, the distance between the first fine gate and the second fine gate is equal to half of the distance between the two second fine gates.

[0032] In a second aspect, an embodiment of the present application provides a stencil for manufacturing a solar cell, and the stencil includes:

[0033] A fine gate stencil, including a fine gate stencil body, on which a plurality of first gate line slit columns and a plurality of second gate line slit columns are provided, and the first gate line slit columns and the second gate line slit columns are arranged alternately in the first direction; the first gate line slit column includes a plurality of first fine gate slits arranged in the second direction, the second gate line slit column includes a plurality of second fine gate slits arranged in the second direction, in adjacent first gate line slit columns and second gate line slit columns, the first fine gate slits and the second fine gate slits are arranged offset in the first direction, the first gate line slit column and the second gate line slit column have an overlapping area, and parts of the first fine gate slits and parts of the second fine gate slits are both located in the overlapping area;

[0034] A main gate stencil, including a main gate stencil body, on which a plurality of main gate slits are provided, the plurality of main gate slits are arranged at intervals in the first direction, and the main gate slits are correspondingly arranged with the first fine gate slits and the second fine gate slits located in the overlapping area. Description of the Drawings

[0035] Figure 1 It is a schematic structural diagram of the electrode structure provided by the embodiment of the present application.

[0036] Figure 2 It is a schematic structural diagram of the first gate line column and the second gate line column provided by the embodiment of the present application.

[0037] Figure 3 It is another schematic structural diagram of the electrode structure provided by the embodiment of the present application.

[0038] Figure 4 It is another schematic structural diagram of the first gate line column and the second gate line column provided by the embodiment of the present application.

[0039] Figure 5 Another schematic structural diagram of the first gate line column and the second gate line column provided by the embodiment of the present application.

[0040] Figure 6 Another schematic structural diagram of the electrode structure provided by the embodiment of the present application.

[0041] Figure 7 is Figure 6 An enlarged structural diagram of C in

[0042] Figure 8 Another schematic structural diagram of the electrode structure provided by the embodiment of the present application.

[0043] Figure 9 is Figure 1 An enlarged structural diagram of A in

[0044] Figure 10 is Figure 1 Another enlarged structural diagram of A in

[0045] Explanation of reference numerals:

[0046] 100, electrode structure; 100a, first intermediate region; 100b, first edge region; 100c, second intermediate region; 100d, second edge region; 101, gate line group; 110, first gate line column; 111, first fine gate; 1111, first overlapping segment; 1112, first non-overlapping segment; 120, second gate line column; 122, second fine gate; 1221, second overlapping segment; 1222, second non-overlapping segment; 130, main gate; 131, sub-main gate; 1311, first end; 1312, second end; X, first direction; Y, second direction. Detailed implementation manners

[0047] To make the above objects, features, and advantages of the present application more obvious and understandable, the following will describe the detailed implementation manners of the present application in conjunction with the accompanying drawings. Many specific details are set forth in the following description in order to fully understand the present application. However, the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without departing from the connotation of the present application. Therefore, the present application is not limited by the specific embodiments disclosed below.

[0048] In the description of the present application, it should be understood that if there are terms such as "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., the orientation or positional relationship indicated by these terms is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation to the present application.

[0049] In addition, if there are terms such as "first" and "second", these terms are only used for descriptive purposes and should not be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, features defined with "first" and "second" may explicitly or implicitly include at least one such feature. In the description of the present application, if there is a term "plurality", the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise specifically and clearly defined.

[0050] In the present application, unless otherwise clearly specified and limited, if there are terms such as "mounted", "connected", "connected to", "fixed", etc., these terms should be understood in a broad sense. For example, it may be a fixed connection, a detachable connection, or integrated; it may be a mechanical connection or an electrical connection; it may be directly connected or indirectly connected through an intermediate medium, and it may be the communication inside two elements or the interaction relationship between two elements, unless otherwise clearly limited. For those of ordinary skill in the art, the specific meanings of the above terms in the present application can be understood according to specific circumstances.

[0051] In the present application, unless otherwise clearly specified and limited, if there is a description such as a first feature being "on" or "under" a second feature, the meaning may be that the first and second features are in direct contact, or the first and second features are indirectly in contact through an intermediate medium. Moreover, the first feature being "above", "over" and "on" the second feature may mean that the first feature is directly above or obliquely above the second feature, or merely indicates that the first feature has a higher horizontal height than the second feature. The first feature being "under", "beneath" and "under" the second feature may be that the first feature is directly below or obliquely below the second feature, or merely indicates that the first feature has a lower horizontal height than the second feature.

[0052] It should be noted that if an element is referred to as "fixed to" or "disposed on" another element, it can be directly on the other element or there may be an intermediate element. If an element is considered to be "connected to" another element, it can be directly connected to the other element or there may be an intermediate element at the same time. If present, the terms "vertical", "horizontal", "upper", "lower", "left", "right" and similar expressions used in this application are only for the purpose of illustration and do not represent the only implementation.

[0053] In the related art, a solar cell includes a semiconductor substrate, on which a plurality of fine grids are provided. The plurality of fine grids extend in a first direction and are arranged at intervals in a second direction. The same fine grid includes a plurality of sub-fine grids arranged at intervals in the first direction, and adjacent two sub-fine grids are connected by a main grid. The main grid is provided with a "centipede foot" shaped overlapping structure on both sides in the first direction. The overlapping structure includes a first extension portion and a second extension portion. The first extension portion extends in the first direction, and the second extension portion extends in the second direction. Two ends of the first extension portion are respectively connected to the main grid and the middle portion of the second extension portion in the second direction. By providing the overlapping structure, it is beneficial to ensure the overlap between the sub-fine grid and the main grid.

[0054] However, when the above-mentioned sub-fine grid and main grid are aligned, alignment in the first direction and the second direction is required. The sub-fine grid and the main grid have alignment requirements in two directions, so that the alignment difficulty between the sub-fine grid and the main grid is still relatively high, and the alignment difficulty between the sub-fine grid and the main grid needs to be reduced.

[0055] To solve the above problems, an embodiment of the present application provides a solar cell and a screen plate for manufacturing a solar cell, which can reduce the alignment difficulty between the first fine grid and the second fine grid of adjacent first grid line columns and second grid line columns and the main grid.

[0056] The following will be combined with Figures 1 - 10 to describe the solar cell and the screen plate for manufacturing a solar cell provided by the embodiment of the present application.

[0057] The following describes the electrode structure 100 provided by the embodiment of the present application.

[0058] An embodiment of the present application provides an electrode structure 100. The electrode structure 100 is used for a solar cell and can be used to collect and transmit current. Refer to Figure 1 , the electrode structure 100 includes at least one first grid line column 110 and at least one second grid line column 120. The first grid line column 110 and the second grid line column 120 can be alternately arranged in a first direction X, so that the arrangement of the first grid line column 110 and the second grid line column 120 in the first direction X is relatively uniform. The electrode structure 100 includes a main grid 130, and adjacent first grid line columns 110 and second grid line columns 120 are connected by the main grid 130.

[0059] Exemplarily, the number of the first gate line columns 110 may be 1, 2, 3, or any number greater than 3.

[0060] Exemplarily, the number of the second gate line columns 120 may be 1, 2, 3, or any number greater than 3.

[0061] Referring to Figure 1 , the first gate line column 110 includes a plurality of first fine gate lines 111 arranged along the second direction Y, and the second gate line column 120 includes a plurality of second fine gate lines 122 arranged along the second direction Y. Among them, the first fine gate lines 111 and the second fine gate lines 122 are distributed in a high density, and the first fine gate lines 111 and the second fine gate lines 122 can cover most of the area of the solar cell, shortening the transmission distance of carriers to the electrode structure and reducing the recombination loss. The main gate line can aggregate the current collected by the first fine gate lines 111 and the second fine gate lines 122 and transmit it to the external circuit.

[0062] Referring to Figure 1 , in adjacent first gate line columns 110 and second gate line columns 120, the first fine gate lines 111 and the second fine gate lines 122 are arranged in a staggered manner in the first direction X. When the adjacent first fine gate lines 111 and second fine gate lines 122 are aligned in the first direction X and located on the same straight line, an external force can form a linear stress transmission path along the first fine gate lines 111 and the second fine gate lines 122, resulting in continuous accumulation of stress along the straight line where the first fine gate lines 111 and the second fine gate lines 122 are located, and it is easy to form a local high stress area. The first fine gate lines 111 and the second fine gate lines 122 are arranged in a staggered manner in the first direction X, and the external force transmission path is dispersed to different positions, avoiding the linear superposition of stress in a single direction, thereby reducing the local stress.

[0063] It should be noted that if the fine gate lines are continuous long straight fine gate lines from one side to the other side of the semiconductor substrate in the first direction X, when the fine gate lines are subjected to an external force, such continuous long straight fine gate lines are likely to cause stress concentration, and a certain point along the long straight line is likely to break due to the force, thereby affecting the collection of carriers by the fine gate lines. In the embodiment of the present application, by disconnecting the first fine gate lines 111 and the second fine gate lines 122 of the adjacent first gate line columns 110 and second gate line columns 120 and arranging them in a staggered manner in the first direction, the stress is dispersed to each of the disconnected first fine gate lines 111 and second fine gate lines 122, which can relieve the stress concentration phenomenon on the first fine gate lines 111 and the second fine gate lines 122 and reduce the fracture risk of the first fine gate lines 111 and the second fine gate lines 122 in the first gate line columns 110 and the second gate line columns 120.

[0064] Referring to Figure 1 and Figure 10, in adjacent first gate line column 110 and second gate line column 120, the positive projection of the first fine gate 111 in the second direction Y and the positive projection of the second fine gate 122 in the second direction Y partially overlap. Figure 1 B in shows the overlapping part of the positive projections of the first fine gate 111 and the second fine gate 122 in the second direction Y. That is, the first gate line column 110 and the second gate line column 120 have an overlapping area, and parts of the first fine gate 111 and the second fine gate 122 are both located in the overlapping area. Figure 1 B in shows the dimension of the overlapping area in the first direction X. Among them, the first fine gate 111 includes a first overlapping segment 1111, and the first overlapping segment 1111 intersects with the positive projection of the part of the second fine gate 122 in the second direction Y. The first overlapping segment 1111 is located in the overlapping area. The first fine gate 111 further includes a first non-overlapping segment 1112, and the first non-overlapping segment 1112 does not overlap with the positive projection of the second fine gate 122 in the second direction Y. There is no overlap between the first non-overlapping segment 1112 and the overlapping area, and the first non-overlapping segment 1112 is located outside the overlapping area. The second fine gate 122 includes a second overlapping segment 1221, and the second overlapping segment 1221 intersects with the positive projection of the part of the first fine gate 111 in the second direction Y. The second overlapping segment 1221 is located in the overlapping area. The second fine gate 122 further includes a second non-overlapping segment 1222, and the second non-overlapping segment 1222 does not overlap with the positive projection of the first fine gate 111 in the second direction Y. There is no overlap between the second non-overlapping segment 1222 and the overlapping area, and the second non-overlapping segment 1222 is located outside the overlapping area.

[0065] See Figure 1, in adjacent first gate line columns 110 and second gate line columns 120, and in main gate 130 connecting between the adjacent first gate line columns 110 and second gate line columns 120, the overlapping part of the positive projections of first fine gate 111 and second fine gate 122 in the second direction Y is connected to main gate 130. That is, first fine gate 111 and second fine gate 122 located in the overlapping area are connected to main gate 130. With such an arrangement, by using the overlapping part of the positive projections of the first fine gate 111 and the second fine gate 122 in the second direction Y to connect with main gate 130, only alignment along the first direction X is required between main gate 130 and the first fine gate 111 and the second fine gate 122, and no alignment along the second direction Y is needed between main gate 130 and the first fine gate 111 and the second fine gate 122. So, only one-directional alignment is needed between main gate 130 and the first fine gate 111 and the second fine gate 122, which can reduce the alignment difficulty between main gate 130 and the first fine gate 111 and the second fine gate 122. Additionally, there is no need to adopt the "centipede foot" - shaped overlapping structure in the related technology to ensure the overlap between main gate 130 and the first fine gate 111 and the second fine gate 122. By eliminating the overlapping structure, the consumption of the paste for main gate 130 can be reduced, and the shading loss caused by the overlapping structure can be avoided, thus being beneficial to improving the conversion efficiency of the solar cell.

[0066] It should be noted that referring to Figure 2 and Figure 10 , the first overlapping segment 1111 is located at at least one end of first fine gate 111 along the first direction X. When the first gate line column 110 is the outermost gate line column along the first direction X, a second gate line column 120 is arranged on one side of the first gate line column 110 along the first direction X, and no second gate line column 120 is arranged on the other side along the first direction X. Taking the first gate line column in Figure 2 as an example, only one end of the first gate line column 110 is provided with the first overlapping segment 1111. When second gate line columns 120 are arranged on both sides of the first gate line column 110 along the first direction X, taking the third gate line column in Figure 2 as an example, both ends of the first gate line column 110 along the first direction X are provided with the first overlapping segments 1111, and the first non - overlapping segment 1112 is located between the two first overlapping segments 1111. Correspondingly, the second overlapping segment 1221 is located at at least one end of the second fine gate 122 along the first direction X. When the second gate line column 120 is the outermost gate line column along the first direction X, a first gate line column 110 is arranged on one side of the second gate line column 120 along the first direction X, and no first gate line column 110 is arranged on the other side along the first direction X. Taking the fourth gate line column in Figure 2 as an example, only one end of the second gate line column 120 is provided with the second overlapping segment 1221. When first gate line columns 110 are arranged on both sides of the second gate line column 120 along the first direction X, taking the example in Figure 2Taking the second gate line column as an example, second overlapping segments 1221 are provided at both ends of the second gate line column 120 along the first direction X, and a second non-overlapping segment 1222 is located between the two second overlapping segments 1221.

[0067] In some embodiments, referring to Figure 1 , in adjacent first gate line column 110 and second gate line column 120, and in the main gate 130 connecting the adjacent first gate line column 110 and second gate line column 120, the overlapping dimension of the positive projections of the first fine gate 111 and the second fine gate 122 in the second direction Y is greater than or equal to the dimension of the main gate 130 along the first direction X. Equivalently, the dimension of the overlapping region along the first direction X is greater than or equal to the dimension of the main gate 130 along the first direction X, thereby facilitating ensuring that the first gate line column 110 and the second gate line column 120 are effectively overlapped with the main gate 130.

[0068] Wherein, the overlapping dimension of the positive projections of the first fine gate 111 and the second fine gate 122 in the second direction Y can be the dimension along the first direction X of the overlapping portion of the positive projections of the first fine gate 111 and the second fine gate 122 in the second direction Y.

[0069] In some embodiments, referring to Figure 3, the electrode structure 100 includes a plurality of gate line groups 101 arranged along the first direction X; the gate line group 101 includes a first gate line column 110 and a second gate line column 120 arranged along the first direction X. In the same gate line group 101, a first gate line column 110 and a second gate line column 120 are adjacent to each other. In two adjacent gate line groups 101, the overlapping dimension of the positive projection of the first fine gate 111 of one gate line group 101 and the second fine gate 122 of the other gate line group 101 in the second direction Y is the first dimension D1. That is to say, the dimension of the overlapping area of the first gate line column 110 of one gate line group 101 and the second gate line column 120 of the other gate line group 101 along the first direction X is the first dimension D1. In the same gate line group 101, the overlapping dimension of the positive projection of the first fine gate 111 and the second fine gate 122 in the second direction Y is the second dimension D2. That is to say, in the same gate line group 101, the dimension of the overlapping area of the first gate line column 110 and the second gate line column 120 along the first direction X is the second dimension D2, where the second dimension is greater than the first dimension. In this way, in two adjacent gate line groups 101, the overlapping dimension of the positive projection of the first fine gate 111 of one gate line group 101 and the second fine gate 122 of the other gate line group 101 in the second direction Y can be made smaller, which is beneficial to alleviating the stress concentration phenomenon in the overlapping part of the two adjacent gate line groups 101 and reducing the fracture risk in the overlapping part of the two adjacent gate line groups 101. In addition, in the same gate line group 101, the overlapping dimension of the positive projection of the first fine gate 111 and the second fine gate 122 in the second direction Y can be made larger, so that the dimensions of the first fine gate 111 and the second fine gate 122 in the same gate line group 101 along the first direction X are larger, which is beneficial to improving the carrier collection ability of the gate line group 101.

[0070] Exemplarily, the first dimension D1 can be less than half of the dimension of any one of the first fine gate 111 and the second fine gate 122 along the first direction X, so that the first dimension is smaller, which is beneficial to alleviating the stress concentration phenomenon in the overlapping part of the two adjacent gate line groups 101 and reducing the fracture risk in the overlapping part of the two adjacent gate line groups 101.

[0071] Exemplarily, the second dimension D2 can be greater than half of the dimension of any one of the first fine gate 111 and the second fine gate 122 along the first direction X, so that in the same gate line group 101, the overlapping dimension of the positive projection of the first fine gate 111 and the second fine gate 122 in the second direction Y can be made larger, and the dimensions of the first fine gate 111 and the second fine gate 122 in the same gate line group 101 along the first direction X are larger, which is beneficial to improving the carrier collection ability of the gate line group 101.

[0072] In some other embodiments, refer to Figure 2, in any adjacent first gate line columns 110 and second gate line columns 120, the overlapping dimension of the positive projections of the first fine gate 111 and the second fine gate 122 in the second direction Y can be the first dimension D1. At this time, in the same gate line group 101, the overlapping dimension of the positive projections of the first fine gate 111 and the second fine gate 122 in the second direction Y is also the first dimension D1. Thus, the overlapping dimensions of any adjacent first gate line columns 110 and second gate line columns 120 are relatively small, which is beneficial to reducing the shading of sunlight by all the first fine gates 111 and all the second fine gates 122, and is beneficial to reducing the shading loss.

[0073] It should be noted that, in the preparation process of the electrode structure, a high-temperature process (for example, a high-temperature sintering process) may be included. In the high-temperature process, the electrode structure 100 will deform, and the closer to the edge region of the electrode structure 100, the greater the deformation degree of the electrode structure 100.

[0074] In some embodiments, referring to Figure 4 , the electrode structure 100 includes a first intermediate region 100a and two first edge regions 100b. The two first edge regions 100b are located on both sides of the first intermediate region 100a along the first direction X. The overlapping dimension of the positive projections of the first fine gate 111 and the second fine gate 122 of the adjacent first gate line columns 110 and second gate line columns 120 located in the first edge region 100b in the second direction Y is greater than the overlapping dimension of the positive projections of the first fine gate 111 and the second fine gate 122 of the adjacent first gate line columns 110 and second gate line columns 120 located in the first intermediate region 100a in the second direction Y. Equivalently, the dimension of the overlapping region of the adjacent first gate line columns 110 and second gate line columns 120 located in the first edge region 100b along the first direction X is greater than or equal to the dimension of the overlapping region of the adjacent first gate line columns 110 and second gate line columns 120 located in the first intermediate region 100a along the first direction X. In this way, in the high-temperature process, it can be avoided that the adjacent first gate line columns 110 and second gate line columns 120 in the first edge region 100b of the electrode structure 100 are not easily connected to the corresponding main gate 130 due to excessive deformation.

[0075] In another embodiment, the overlapping dimension of the positive projections of the first fine gate 111 and the second fine gate 122 of the adjacent first gate line columns 110 and second gate line columns 120 located in the first edge region 100b in the second direction Y is equal to the overlapping dimension of the positive projections of the first fine gate 111 and the second fine gate 122 of the adjacent first gate line columns 110 and second gate line columns 120 located in the first intermediate region 100a in the second direction Y. In this way, the arrangement mode of the electrode structure 100 is relatively simple, which is beneficial to reducing the design difficulty and preparation difficulty of the first gate line columns 110 and the second gate line columns 120.

[0076] In some embodiments, referring toFigure 1 , in adjacent first gate line columns 110 and second gate line columns 120, at least one second fine gate 122 may be disposed between two adjacent first fine gates 111 along the second direction, and at least one first fine gate 111 may be disposed between two adjacent second fine gates 122 along the second direction. In the embodiments of the present application, the example where the first fine gates 111 and the second fine gates 122 are alternately arranged along the second direction Y is described. In adjacent first gate line columns 110 and second gate line columns 120, the first fine gates 111 and the second fine gates 122 are alternately arranged along the second direction Y, and a first overlapping segment 1111 of the first fine gate 111 close to the second fine gate 122 and a second overlapping segment 1221 of the second fine gate 122 close to the first fine gate 111 are alternately arranged along the second direction Y. Thus, in adjacent first gate line columns 110 and second gate line columns 120, the first fine gates 111 and the second fine gates 122 are arranged more uniformly and regularly in the second direction Y, which is beneficial to reducing the design difficulty of the first fine gates 111 and the second fine gates 122, improving the collection uniformity of carriers, and avoiding too high or too low local current density.

[0077] It should be noted that at the edge of the solar cell, due to the cutting or encapsulation of the cell, microcracks or lattice defects are likely to occur in the edge region, becoming carrier recombination centers and reducing the effective carrier concentration. In addition, during the preparation or encapsulation of the cell, the edge region is more likely to accumulate stress due to the difference in thermal expansion coefficient, resulting in microcracks or lattice distortion, further exacerbating recombination. Therefore, the collection of carriers in the edge region by the electrode structure is worse than that in the central region.

[0078] See Figure 5, in an embodiment where the first fine grid 111 of the adjacent first grid line column 110 and the second fine grid 122 of the second grid line column 120 are alternately arranged along the second direction Y, the electrode structure 100 includes a second intermediate region 100c and two second edge regions 100d. The two second edge regions 100d are provided on both sides of the second intermediate region 100c along the second direction Y. The distance between the adjacent first fine grid 111 and the second fine grid 122 in the second edge region 100d along the second direction Y is smaller than the distance between the adjacent first fine grid 111 and the second fine grid 122 in the second intermediate region 100c along the second direction Y. In this way, the distribution density of the first fine grid 111 and the second fine grid 122 in the second edge region 100d is relatively large, which is conducive to improving the collection of carriers in the second edge region 100d by the first fine grid 111 and the second fine grid 122. In addition, the distribution density of the first fine grid 111 and the second fine grid 122 in the second intermediate region 100c is relatively small, which is conducive to reducing the shielding of sunlight and reducing the shading loss. Alternatively, the distance between the adjacent first fine grid 111 and the second fine grid 122 in the second edge region 100d along the second direction Y is equal to the distance between the adjacent first fine grid 111 and the second fine grid 122 in the second intermediate region 100c along the second direction Y, so that the arrangement of the first fine grid 111 and the second fine grid 122 is more regular, which is conducive to reducing the design difficulty of the first fine grid 111 and the second fine grid 122.

[0079] In some embodiments, referring to Figure 1 , the shape of the main grid 130 is linear and the main grid 130 extends along the second direction X. In this way, the shape of the main grid 130 is relatively simple, which is conducive to reducing the design and preparation difficulty of the main grid 130.

[0080] In other embodiments, the shape of the main grid 130 can also be a curve, a broken line or other regular or irregular shapes.

[0081] Referring to Figure 6 and Figure 7, in an embodiment where the first fine grid 111 of the adjacent first grid line column 110 and the second fine grid 122 of the second grid line column 120 are alternately arranged along the second direction Y, in the adjacent first grid line column 110 and second grid line column 120, and the main grid 130 connecting the adjacent first grid line column 110 and second grid line column 120, the main grid 130 may include a plurality of sub-main grids 131. The plurality of sub-main grids 131 are arranged along the second direction Y, the extending directions of two adjacent sub-main grids 131 intersect, and two adjacent sub-main grids 131 are connected to each other. Any two of the extending direction of the sub-main grid 131, the first direction, and the second direction intersect. One sub-main grid 131 is connected between the adjacent first fine grid 111 and second fine grid 122. The sub-main grid 131 includes a first end 1311 and a second end 1312 in the extending direction. The first end 1311 is connected to the first fine grid 111, and the second end 1312 is connected to the second fine grid 122. The distance L between the sub-main grid 131 and the first fine grid 111 along the second direction Y gradually decreases from the direction along the first fine grid 111 close to the end away from the second fine grid 122 (i.e., Figure 7 the direction X1 from right to left in Figure 10 ). Thus, the first end 1311 is closer to the first non-overlapping segment 1112 of the first fine grid 111 than the second end 1312 ( Figure 10 ), which can make the first end 1311 still relatively easy to overlap with the first fine grid 111 on the premise that the size of the first overlapping segment 1111 ( Figure 10 ) is small, and the alignment difficulty between the first end 1311 and the first fine grid 111 along the first direction X is further reduced. In addition, the second end 1312 is closer to the second non-overlapping segment 1222 of the second fine grid 122 than the first end 1311 ( Figure 10 ), which can make the second end 1312 still relatively easy to overlap with the second fine grid 122 on the premise that the size of the second overlapping segment 1221 (

[0082] ) is small, and the alignment difficulty between the second end 1312 and the second fine grid 122 along the first direction X is further reduced.

[0083] Exemplarily, the first direction and the second direction may intersect obliquely or perpendicularly. Figure 6 and Figure 7 , in some embodiments, in the adjacent first grid line column 110 and second grid line column 120, and the main grid 130 connecting the adjacent first grid line column 110 and second grid line column 120, the extending direction of the sub-main grid 131 intersects obliquely with the first direction X. The first end 1311 is obliquely arranged relative to the second end 1312 in the direction of approaching the end of the first fine grid 111 away from the second fine grid 122. Among them, the end of the first fine grid 111 away from the second fine grid 122 may be Figure 7The left end of the first fine grid 111 in []. By setting the sub-main grid 131 to be inclined in this way, on the premise that the sizes of the first overlapping segment 1111 and the second overlapping segment 1221 are small, it is still relatively easy for the sub-main grid 131 to overlap with the first fine grid 111 and the second fine grid 122, which is beneficial to further reducing the alignment difficulty between the sub-main grid 131 and the first fine grid 111 and the second fine grid 122 along the first direction X.

[0084] In some embodiments, referring to Figure 9 , in the same first fine grid 111, the size of the first fine grid 111 along the second direction Y is the same everywhere in the first direction X. In this way, the structure of the first fine grid 111 is relatively simple, reducing the design and preparation difficulty of the first fine grid 111.

[0085] In some embodiments, referring to Figure 9 , in the same second fine grid 122, the size of the second fine grid 122 along the second direction Y is the same everywhere in the first direction X. In this way, the structure of the second fine grid 122 is relatively simple, which is beneficial to reducing the design and preparation difficulty of the second fine grid 122.

[0086] In some embodiments, referring to Figure 10 , in the same first fine grid 111, the size of at least a part of the first overlapping segment 1111 along the second direction Y is greater than the size of the rest of the first fine grid 111 along the second direction Y. In this way, it is beneficial to increase the overlapping area between the main grid 130 and the first overlapping segment 1111, thereby being beneficial to reducing the overlapping impedance between the main grid 130 and the first overlapping segment 1111.

[0087] In some embodiments, referring to Figure 10 , in the same second fine grid 122, the size of at least a part of the second overlapping segment 1221 along the second direction Y is greater than the size of the rest of the second fine grid 122 along the second direction Y. In this way, it is beneficial to increase the overlapping area between the main grid 130 and the second overlapping segment 1221, thereby being beneficial to reducing the overlapping impedance between the main grid 130 and the second overlapping segment 1221.

[0088] In some embodiments, referring to Figure 1 and referring to Figure 8 , the number of main grids 130 connected between adjacent first grid line columns 110 and second grid line columns 120 is at least one. Continuing to refer to Figure 8 , when the number of main grids 130 connected between adjacent first grid line columns 110 and second grid line columns 120 is multiple, the multiple main grids 130 are arranged at intervals along the first direction Y. In this way, if there is a deviation (such as offset or broken grid) in the printing of a certain main grid 130, the adjacent main grids 130 can still provide redundant current channels, thereby reducing the overall defect rate and improving the process fault tolerance of the main grid 130.

[0089] In some embodiments, referring to Figure 1 , in an embodiment where the first fine grid 111 of the adjacent first grid line column 110 and the second fine grid 122 of the second grid line column 120 are alternately arranged along the second direction Y, among at least some adjacent two first fine grids 111 and the second fine grid 122 located between the two adjacent first fine grids 111, the distance between the first fine grid 111 and the second fine grid 122 is equal to half of the distance between the two first fine grids 111. In this way, the distances between the second fine grid 122 and the two first fine grids 111 along the second direction Y are the same, so that the second fine grid 122 and the two first fine grids 111 are evenly arranged along the second direction Y, which is beneficial to improving the uniformity of carrier collection and avoiding too high or too low local current density.

[0090] It should be noted that in the same first grid line column 110, the distance between at least some adjacent two first fine grids 111 can be a first distance, which can mean that the distance between some adjacent two first fine grids 111 can be a first distance, the distance between another part of adjacent two first fine grids 111 can be a second distance, or the distance between each adjacent two first fine grids 111 can be a first distance.

[0091] In some embodiments, in an embodiment where the first fine grid 111 of the adjacent first grid line column 110 and the second fine grid 122 of the second grid line column 120 are alternately arranged along the second direction Y, among at least some adjacent two second fine grids 122 and the first fine grid 111 located between the two adjacent second fine grids 122, the distance between the first fine grid 111 and the second fine grid 122 is equal to half of the distance between the two second fine grids 122. In this way, the distances between the first fine grid 111 and the two second fine grids 122 along the second direction Y are the same, so that the first fine grid 111 and the two second fine grids 122 are evenly arranged along the second direction Y, which is beneficial to improving the uniformity of carrier collection and avoiding too high or too low local current density.

[0092] Exemplarily, the material of at least one of the first fine grid 111, the second fine grid 122, and the main grid 130 may include any one or more of metal materials such as silver, copper, aluminum, lead, nickel, titanium, tin, conductive polymers, and graphene.

[0093] Exemplarily, at least one of the first fine grid 111, the second fine grid 122, and the main grid 130 may be formed by means such as steel mesh printing, screen printing, laser transfer printing, inkjet printing, and intaglio printing.

[0094] The solar cell provided by the embodiment of the present application will be described below.

[0095] An embodiment of the present application provides a solar cell, which includes the electrode structure 100 in the above embodiment. The solar cell may include the electrode structure 100 and a solar cell body, and the electrode structure 100 may be disposed on the solar cell body.

[0096] The solar cell may include a heterojunction solar cell (abbreviated as HJT), a back contact cell (abbreviated as BC), a tunnel oxide passivating contact cell (abbreviated as TOPCON), a heterojunction back contact cell (abbreviated as HBC), a hybrid fully passivated back contact cell (hybrid HBC), a passivated emitter rear cell (abbreviated as PERC), an interdigitated back contact cell (abbreviated as IBC), etc.

[0097] The following describes the photovoltaic module provided by the embodiment of the present application.

[0098] An embodiment of the present application provides a photovoltaic module, which includes the solar cell in the above embodiment. The solar cell in the photovoltaic module may be at least one. In the embodiment of the present application, it is described by taking the solar cells in the photovoltaic module as multiple as an example, and multiple solar cells together form a battery string layer.

[0099] In some embodiments, the photovoltaic module may include a first encapsulant and a second encapsulant located on both sides of the battery string layer. The first encapsulant and the second encapsulant encapsulate the battery string layer to protect the battery string layer. The first encapsulant and the second encapsulant may include an encapsulation adhesive layer and a cover plate. The encapsulation adhesive layer is located on the side of the cover plate facing the battery string layer. The cover plate can protect the battery string layer, and the encapsulation adhesive layer can be used to connect the cover plate and the battery string layer.

[0100] The following describes the screen printing plate provided by the embodiment of the present application.

[0101] An embodiment of the present application provides a screen printing plate, which is used for printing and preparing the electrode structure 100 of the solar cell in the above embodiment. The screen printing plate includes a fine grid screen printing plate and a main grid screen printing plate. The fine grid screen printing plate can be used to print the first fine grid 111 and the second fine grid 122, and the main grid screen printing plate can be used to print the main grid 130.

[0102] The fine grid plate includes a fine grid plate body, on which a plurality of first grid line slit columns and a plurality of second grid line slit columns are arranged. The first grid line slit columns and the second grid line slit columns are arranged alternately along the first direction X. The first grid line slit column includes a plurality of first fine grid slits arranged along the second direction Y, and the second grid line slit column includes a plurality of second fine grid slits arranged along the second direction Y. In adjacent first and second grid line slit columns, the first and second fine grid slits are arranged in a staggered manner in the first direction X, and the orthographic projection of the first fine grid slit in the second direction Y and the orthographic projection of the second fine grid slit in the second direction Y partially overlap. That is, the first and second grid line slit columns have an overlapping area, and parts of the first and second fine grid slits are located in the overlapping area. The first grid line slit column corresponds to the first grid line column 110, and the first fine grid slit corresponds to the first fine grid 111. The first fine grid 111 is formed through the corresponding first fine grid slit. During the printing process of the first fine grid 111, the first fine grid slit and the first fine grid 111 can coincide. The second grid line slit column corresponds to the second grid line column 120, and the second fine grid slit corresponds to the second fine grid 122. The second fine grid 122 is formed through the corresponding second fine grid slit. During the printing process of the second fine grid 122, the second fine grid slit and the second fine grid 122 can coincide. The arrangement of the first fine grids 111 of the electrode structure 100 is the same as the arrangement of the first fine grid slits of the fine grid plate, and the arrangement of the second fine grids 122 of the electrode structure 100 is the same as the arrangement of the second fine grid slits of the fine grid plate. The first and second fine grid slits penetrate the fine grid plate body.

[0103] It should be noted that if a complete continuous long straight fine grid is printed from one side to the other side of the semiconductor substrate along the first direction X, the fine grid plate needs to be provided with continuous long straight fine grid slits. When the fine grid plate is subjected to an external force, such continuous long straight fine grid slits are likely to cause stress concentration, and a certain point along the long straight line is easily damaged due to the force, so that the long straight fine grid slit is easily cracked due to stress concentration, resulting in the scrapping of the fine grid plate. In addition, the longer fine grid slit will weaken the overall rigidity of the fine grid plate, resulting in a decrease in the local tension of the fine grid plate. Therefore, in the embodiment of the present application, by disconnecting the first and second fine grid slits of adjacent first and second grid line slit columns and arranging them in a staggered manner along the first direction, it is beneficial to relieve the stress concentration phenomenon of the fine grid plate and also enables the entire fine grid plate to maintain an appropriate tension.

[0104] In some embodiments, the main grid screen plate includes a main grid screen plate body, on which a plurality of main grid slits are provided. The plurality of main grid slits are arranged at intervals along the first direction X, and the main grid slits correspond to the main grid 130. The main grid 130 is formed through the corresponding main grid slits. During the process of printing the main grid 130, the main grid slits and the main grid 130 can coincide. The arrangement mode of the main grid 130 of the electrode structure 100 is the same as that of the main grid slits of the main grid screen plate. The main grid slits can penetrate through the main grid screen plate body. The overlapping part of the positive projections of the first fine grid slit and the second fine grid slit in the second direction Y coincides with the main grid slit. That is, the main grid slit corresponds to the first fine grid slit and the second fine grid slit located in the overlapping area. The first fine grid 111 and the second fine grid 122 formed by the overlapping part of the positive projections of the first fine grid slit and the second fine grid slit in the second direction Y are connected to the main grid 130 formed by the corresponding main grid slit.

[0105] Exemplarily, pour the slurry on the fine grid screen plate body of the fine grid screen plate, and drive the slurry to move on the fine grid screen plate body with a squeegee, so that the slurry is extruded onto the solar cell through the first fine grid slit and the second fine grid slit on the fine grid screen plate body, and the corresponding first fine grid 111 and second fine grid 122 are formed on the solar cell. Similarly, the main grid 130 can be formed on the solar cell through the main grid slit of the main grid screen plate.

[0106] In the adjacent first grid line slit column and second grid line slit column, and in the main grid slit corresponding to the adjacent first grid line slit column and second grid line slit column, the overlapping dimension of the positive projections of the first fine grid slit and the second fine grid slit in the second direction Y is greater than or equal to the dimension of the main grid slit along the first direction X.

[0107] In some embodiments, the fine grid screen plate includes a plurality of grid line slit groups, which are arranged along the first direction X. Each grid line slit group includes a first grid line slit column and a second grid line slit column arranged along the first direction X. In two adjacent grid line slit groups, the overlapping dimension of the positive projections of the first fine grid slit of one grid line slit group and the second fine grid slit of the other grid line slit group in the second direction Y is the first dimension. In the same grid line slit group, the overlapping dimension of the positive projections of the first fine grid slit and the second fine grid slit in the second direction Y is the second dimension, and the second dimension is greater than the first dimension.

[0108] In some embodiments, the first dimension is less than half of the dimension of any one of the first fine grid slit and the second fine grid slit along the first direction X. In this way, the first dimension is relatively small, which is beneficial to alleviating the stress concentration phenomenon in the overlapping part of two adjacent grid line slit groups and improving the tension of the fine grid screen plate.

[0109] In some embodiments, the second dimension is greater than half of the dimension of any one of the first fine grid gaps and the second fine grid gaps along the first direction X.

[0110] In some embodiments, in adjacent first grid line gap columns and second grid line gap columns, at least one second fine grid gap may be provided between two adjacent first fine grid gaps, and at least one first fine grid gap may be provided between two adjacent second fine grid gaps. In the embodiments of the present application, the case where the first fine grid gaps and the second fine grid gaps are alternately arranged along the second direction Y is taken as an example for description.

[0111] In some embodiments, the fine grid screen plate includes a first intermediate region and two first edge regions. The two first edge regions are located on both sides of the first intermediate region along the first direction X. The first edge region of the fine grid screen plate corresponds to the first edge region of the electrode structure, and the first intermediate region of the fine grid screen plate corresponds to the first intermediate region of the electrode structure. The overlapping dimension of the orthographic projections of two adjacent first fine grid gaps and second fine grid gaps located in the first edge region along the second direction Y is greater than or equal to the overlapping dimension of the orthographic projections of two adjacent first fine grid gaps and second fine grid gaps located in the first intermediate region along the second direction Y.

[0112] In the embodiment where the first fine grid gaps and the second fine grid gaps in adjacent first grid line gap columns and second grid line gap columns are alternately arranged along the second direction Y, the fine grid screen plate includes a second intermediate region and two second edge regions. The two second edge regions are provided on both sides of the second intermediate region along the second direction Y. The second edge region of the fine grid screen plate corresponds to the second edge region 100d of the electrode structure 100, and the second intermediate region of the fine grid screen plate corresponds to the second intermediate region 100c of the electrode structure 100. The distance between two adjacent first fine grid gaps and second fine grid gaps located in the second edge region along the second direction Y is less than or equal to the distance between two adjacent first fine grid gaps and second fine grid gaps located in the second intermediate region along the second direction Y.

[0113] In some embodiments, the shape of the main grid gap is linear and extends along the first direction X. In this way, the structure of the main grid gap is relatively simple, and the preparation difficulty of the main grid gap can be reduced.

[0114] In some embodiments, in an embodiment where the first fine grid gaps and the second fine grid gaps in adjacent first grid line gap columns and second grid line gap columns are alternately arranged along the second direction Y, in the adjacent first grid line gap column and second grid line gap column, and in the main grid gaps corresponding to the adjacent first grid line gap column and second grid line gap column, the main grid gap includes a plurality of sub-main grid gaps, the plurality of sub-main grid gaps are arranged along the second direction Y, the extending directions of two adjacent sub-main grid gaps intersect and are connected to each other, one sub-main grid gap is correspondingly arranged between the adjacent first fine grid gap and the second fine grid gap, the distance between two adjacent sub-main grid gaps along the second direction gradually changes, and the distance between the sub-main grid gap and the first fine grid gap along the second direction Y gradually decreases from the end of the first fine grid gap close to the second fine grid gap to the end far from the second fine grid gap.

[0115] In some embodiments, the extending direction of the sub-main grid gap intersects obliquely with the first direction X, the sub-main grid gap includes a first end and a second end located in the extending direction. In the adjacent first grid line gap column and second grid line gap column, and in the main grid gap corresponding to the adjacent first grid line gap column and second grid line gap column, the first end is correspondingly arranged with the first fine grid gap, the second end is correspondingly arranged with the second fine grid gap, and the first end is obliquely arranged in the direction of approaching the end of the first fine grid gap far from the second fine grid gap relative to the second end. The first end of the sub-main grid prepared through the first end of the sub-main grid gap is connected to the first fine grid prepared through the corresponding first fine grid gap, and the second end of the sub-main grid prepared through the second end of the sub-main grid gap is connected to the second fine grid prepared through the corresponding second fine grid gap.

[0116] In some embodiments, in the same first fine grid gap, the size of the first fine grid gap along the second direction Y is the same everywhere in the first direction X. In this way, the structure of the first fine grid gap is relatively simple, which is beneficial to reducing the manufacturing difficulty of the first fine grid gap.

[0117] In some embodiments, in the same second fine grid gap, the size of the second fine grid gap along the second direction Y is the same everywhere in the first direction X. In this way, the structure of the second fine grid gap is relatively simple, which is beneficial to reducing the manufacturing difficulty of the second fine grid gap.

[0118] In some embodiments, the first fine grid gap includes an overlapping section, and the overlapping section of the first fine grid gap overlaps with the positive projection along the second direction Y of a part of the second fine grid gap. The size of at least a part of the overlapping section of the first fine grid gap along the second direction Y is greater than the size of the remaining part of the first fine grid gap along the second direction Y.

[0119] In some embodiments, the second fine grid gap includes an overlapping section. The overlapping section of the second fine grid gap overlaps with the positive projection of the first fine grid gap along the second direction Y. The dimension of at least a part of the overlapping section of the second fine grid gap along the second direction Y is greater than the dimension of the remaining part of the second fine grid gap along the second direction Y.

[0120] In some embodiments, the number of main grid gaps corresponding to adjacent first grid line gap columns and second grid line gap columns is multiple, and the multiple main grid gaps are arranged at intervals along the second direction Y.

[0121] In some embodiments, among two first fine grid gaps that are at least partially adjacent along the second direction Y and a second fine grid gap located between the two adjacent first fine grid gaps, the distance between the first fine grid gap and the second fine grid gap along the second direction is equal to half of the distance between the two first fine grid gaps along the second direction, which is beneficial to improving the uniformity of the distribution of the first fine grid gap and the second fine grid gap along the second direction and is beneficial to making the stress evenly distributed.

[0122] In some embodiments, among two second fine grid gaps that are at least partially adjacent along the second direction Y and a first fine grid gap located between the two adjacent second fine grid gaps, the distance between the first fine grid gap and the second fine grid gap along the second direction is equal to half of the distance between the two second fine grid gaps along the second direction, which is beneficial to improving the uniformity of the distribution of the first fine grid gap and the second fine grid gap along the second direction and is beneficial to making the stress evenly distributed.

[0123] The technical features of the above-described embodiments can be combined arbitrarily. For the sake of brevity of description, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, it should be considered to be within the scope described in this specification.

[0124] The above-described embodiments only represent several implementation manners of the present application. Their descriptions are relatively specific and detailed, but they should not be construed as limiting the scope of the patent application. It should be noted that for those of ordinary skill in the art, without departing from the concept of the present application, several deformations and improvements can still be made, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent of the present application should be subject to the appended claims.

Claims

1. A solar cell, characterized in that, The solar cell includes: A plurality of first grid line columns and a plurality of second grid line columns, the first grid line columns and the second grid line columns being alternately arranged in a first direction; the first grid line columns include a plurality of first fine grids arranged in a second direction, the second grid line columns include a plurality of second fine grids arranged in the second direction, in adjacent first grid line columns and second grid line columns, the first fine grids and the second fine grids are offset in the first direction, the first grid line columns and the second grid line columns have an overlapping area, and parts of the first fine grids and parts of the second fine grids are both located in the overlapping area; Main grids, adjacent first grid line columns and second grid line columns are connected by the main grids, and in adjacent first grid line columns and second grid line columns, and the main grids connecting the adjacent first grid line columns and second grid line columns, the first fine grids and the second fine grids located in the overlapping area are connected to the main grids.

2. The solar cell according to claim 1, wherein In adjacent first grid line columns and second grid line columns, and the main grids connecting the adjacent first grid line columns and second grid line columns, the size of the overlapping area in the first direction is greater than or equal to the size of the main grid in the first direction.

3. The solar cell according to claim 1, characterized in that, The solar cell includes: A plurality of grid line groups arranged in the first direction; each grid line group includes one first grid line column and one second grid line column arranged in the first direction; In two adjacent grid line groups, the size of the overlapping area of the first grid line column of one grid line group and the second grid line column of the other grid line group in the first direction is a first size; In the same grid line group, the size of the overlapping area of the first grid line column and the second grid line column in the first direction is a second size; The second size is greater than the first size.

4. The solar cell according to claim 3, characterized in that, The first size is less than half of the size of any one of the first fine grids and the second fine grids in the first direction; and / or, The second size is greater than half of the size of any one of the first fine grids and the second fine grids in the first direction.

5. The solar cell according to any one of claims 1-4, characterized in that The solar cell includes a first intermediate area and two first edge areas, the two first edge areas being located on both sides of the first intermediate area in the first direction; The size of the overlapping area of adjacent first grid line columns and second grid line columns located in the first edge area in the first direction is greater than or equal to the size of the overlapping area of adjacent first grid line columns and second grid line columns located in the first intermediate area in the first direction.

6. The solar cell according to any one of claims 1-4, characterized in that, In adjacent first grid line columns and second grid line columns, the first fine grids and the second fine grids are alternately arranged in the second direction; The solar cell includes a second intermediate area and two second edge areas, the two second edge areas being provided on both sides of the second intermediate area in the second direction; The distance between the adjacent first fine grid and the second fine grid located in the second edge area along the second direction is less than or equal to the distance between the adjacent first fine grid and the second fine grid located in the second middle area along the second direction.

7. The solar cell according to any one of claims 1-4, characterized in that, The shape of the main grid is linear and extends along the second direction.

8. The solar cell according to any one of claims 1-4, characterized in that, In the adjacent first grid line column and the second grid line column, and the main grid connecting the adjacent first grid line column and the second grid line column, the first fine grid and the second fine grid are alternately arranged along the second direction. The main grid includes a plurality of sub-main grids, and the plurality of sub-main grids are arranged along the second direction. The extending directions of two adjacent sub-main grids intersect and are connected to each other. One sub-main grid is connected between the adjacent first fine grid and the second fine grid. The distance between the sub-main grid and the first fine grid along the second direction gradually decreases from the end of the first fine grid close to the second fine grid to the end far from the second fine grid.

9. The solar cell according to claim 8, characterized in that, The extending direction of the sub-main grid intersects the first direction obliquely. The sub-main grid includes a first end and a second end in the extending direction. In the adjacent first grid line column and the second grid line column, and the main grid connecting the adjacent first grid line column and the second grid line column, the first end is connected to the first fine grid, the second end is connected to the second fine grid, and the first end is obliquely arranged relative to the second end in the direction of approaching the end of the first fine grid far from the second fine grid.

10. The solar cell according to any one of claims 1-4, characterized in that, In the same first fine grid, the dimension of the first fine grid along the second direction is the same everywhere in the first direction; and / or, In the same second fine grid, the dimension of the second fine grid along the second direction is the same everywhere in the first direction.

11. The solar cell according to any one of claims 1-4, characterized in that, The first fine grid includes a first overlapping section located in the overlapping area. At least part of the dimension of the first overlapping section along the second direction is greater than the dimension of the rest of the first fine grid along the second direction; and / or, The second fine grid includes a second overlapping section located in the overlapping area. At least part of the dimension of the second overlapping section along the second direction is greater than the dimension of the rest of the second fine grid along the second direction.

12. The solar cell according to any one of claims 1-4, characterized in that, The number of the main grids connecting between the adjacent first grid line column and the second grid line column is multiple, and the multiple main grids are arranged at intervals along the first direction.

13. The solar cell according to any one of claims 1-4, characterized in that, In the adjacent first grid line column and the second grid line column, the first fine grid and the second fine grid are alternately arranged along the second direction. In at least part of the two adjacent first fine grids and the second fine grid located between the two adjacent first fine grids, the distance between the first fine grid and the second fine grid is equal to half of the distance between the two first fine grids.

14. The solar cell according to any one of claims 1-4, characterized in that, In the adjacent first gate line columns and the second gate line columns, the first fine gates and the second fine gates are alternately arranged along the second direction. In at least a part of two adjacent second fine gates and the first fine gate located between the two adjacent second fine gates, the distance between the first fine gate and the second fine gate is equal to half of the distance between the two second fine gates.

15. A stencil for manufacturing a solar cell, characterized in that, The stencil includes: A fine gate stencil, including a fine gate stencil body, on which a plurality of first gate line slit columns and a plurality of second gate line slit columns are arranged. The first gate line slit columns and the second gate line slit columns are alternately arranged along the first direction. The first gate line slit columns include a plurality of first fine gate slits arranged along the second direction, and the second gate line slit columns include a plurality of second fine gate slits arranged along the second direction. In the adjacent first gate line slit columns and the second gate line slit columns, the first fine gate slits and the second fine gate slits are arranged in a staggered manner in the first direction. The first gate line slit columns and the second gate line slit columns have an overlapping area, and parts of the first fine gate slits and parts of the second fine gate slits are both located in the overlapping area. A main gate stencil, including a main gate stencil body, on which a plurality of main gate slits are arranged. The plurality of main gate slits are arranged at intervals along the first direction, and the main gate slits are correspondingly arranged with the first fine gate slits and the second fine gate slits located in the overlapping area.

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