Solar cell and screen for manufacturing solar cell

Abstract

The present application relates to a solar cell and a screen for manufacturing a solar cell. The solar cell includes a first grid line column and a second grid line column arranged alternately along a first direction; the first grid line column includes a plurality of first fine grids arranged along a second direction, and the second grid line column includes a plurality of second fine grids arranged along the second direction. In adjacent first grid line columns and second grid line columns, the first fine grids and the second fine grids are staggered in the first direction, and the first grid line columns and the second grid line columns have an overlapping area, with portions of the first fine grids and portions of the second fine grids both located in the overlapping area; the first fine grids and the second fine grids located in the overlapping area are connected to corresponding main grids. Therefore, the solar cell and the screen for manufacturing a solar cell provided by the present application can reduce the difficulty of aligning the first fine grids and the second fine grids of adjacent first grid line columns and second grid line columns with the main grid.

Description

Technical Field

[0001] The present application relates to the field of photovoltaic technology, in particular to solar cells and screens for manufacturing solar cells. Background Art

[0002] Solar cells, also known as photovoltaic cells, are semiconductor devices that convert sunlight directly into electricity. Because they are environmentally friendly and do not cause environmental pollution, and because solar energy is a renewable resource, solar cells are a new type of battery with broad development prospects.

[0003] In related art, a solar cell includes a semiconductor substrate on which a plurality of fine grids are disposed. The fine grids extend along a first direction and are spaced apart along a second direction. Each fine grid includes a plurality of sub-fine grids spaced apart along the first direction, with two adjacent sub-fine grids connected by a main grid. However, the difficulty of aligning the connected sub-fine grids with the main grid remains to be reduced. Summary of the Invention

[0004] Based on this, it is necessary to provide a solar cell and a screen for manufacturing the solar cell, which can reduce the difficulty of aligning the first and second fine grids of adjacent first and second grid line columns with the main grid.

[0005] In a first aspect, an embodiment of the present application provides a solar cell, comprising:

[0006] A plurality of first gate line columns and a plurality of second gate line columns, the first gate line columns and the second gate line columns are alternately arranged along a first direction; the first gate line columns include a plurality of first fine gates arranged along a second direction, the second gate line columns include a plurality of second fine gates arranged along the second direction, in adjacent first gate line columns and second gate line columns, the first fine gates and the second fine gates are staggered in the first direction, the first gate line columns and the second gate line columns have an overlapping region, and portions of the first fine gates and portions of the second fine gates are both located in the overlapping region;

[0007] The main gate, the adjacent first gate line column and the second gate line column are connected through the main gate, and in the adjacent first gate line column and the second gate line column, and the main gate connected between the adjacent first gate line column and the second gate line column, the first fine gate and the second fine gate located in the overlapping area are connected to the main gate.

[0008] The solar cell provided by the embodiment of the present application uses the portion where the orthographic projections of the first and second fine grids of adjacent first and second grid line columns in the second direction overlap to connect to the main grid, so that the main grid and the first and second fine grids only need to be aligned along the first direction, and the main grid and the first and second fine grids do not need to be aligned along the second direction, so that the main grid and the first and second fine grids only need to be aligned in a single direction, which can reduce the difficulty of alignment between the main grid and the first and second fine grids. In addition, there is no need to use a "centipede foot" shaped overlap structure to ensure the overlap between the main grid and the first and second fine grids. By eliminating the overlap structure, the consumption of the main grid slurry is reduced, and the shading loss caused by the overlap structure can be avoided, which is beneficial to improving the conversion efficiency of the solar cell.

[0009] In one embodiment, in adjacent first and second gate line columns, and in a main gate connected between the adjacent first and second gate line columns, a size of an overlapping region along the first direction is greater than or equal to a size of the main gate along the first direction.

[0010] In one embodiment, a solar cell comprises:

[0011] A plurality of gate line groups are arranged along a first direction; the gate line groups include a first gate line column and a second gate line column arranged along the first direction;

[0012] In two adjacent gate line groups, the size of the overlapping area along the first direction of the first gate line column of one gate line group and the second gate line column of the other gate line group is the first size;

[0013] In the same gate line group, the size of the overlapping area of ​​the first gate line column and the second gate line column along the first direction is the second size;

[0014] The second size is greater than the first size.

[0015] In one embodiment, the first size is smaller than half of the size of either the first fine grid or the second fine grid along the first direction; and / or

[0016] The second size is greater than half of the size of any one of the first fine grid and the second fine grid along the first direction.

[0017] In one embodiment, the solar cell includes a first middle region and two first edge regions, wherein the two first edge regions are located on both sides of the first middle region along a first direction;

[0018] The size of the overlapping region of the adjacent first gate line column and the adjacent second gate line column in the first edge region along the first direction is greater than or equal to the size of the overlapping region of the adjacent first gate line column and the adjacent second gate line column in the first middle region along the first direction.

[0019] In one embodiment, in adjacent first gate line columns and second gate line columns, the first fine gates and the second fine gates are alternately arranged along the second direction;

[0020] The solar cell includes a second middle region and two second edge regions, wherein the two second edge regions are arranged on both sides of the second middle region along the second direction;

[0021] A distance between adjacent first and second fine gates located in the second edge region along the second direction is less than or equal to a distance between adjacent first and second fine gates located in the second middle region along the second direction.

[0022] In one embodiment, the main grid is in a straight line shape and extends along the second direction.

[0023] In one embodiment, in adjacent first gate line columns and second gate line columns, and in the main gates connected to the adjacent first gate line columns and second gate line columns, the first fine gates and the second fine gates are alternately arranged along the second direction, the main gate includes multiple sub-main gates, the multiple sub-main gates are arranged along the second direction, the extension directions of two adjacent sub-main gates intersect and are connected to each other, a sub-main gate is connected between the adjacent first fine gates and the second fine gates, and the distance between the sub-main gate and the first fine gate along the second direction gradually decreases from the direction along the first fine gate close to one end of the second fine gate to the direction away from one end of the second fine gate.

[0024] In one embodiment, the extension direction of the sub-busbar is obliquely intersected with the first direction, and the sub-busbar includes a first end and a second end located in the extension direction. In the adjacent first gate line column and the second gate line column, and the busbar connected to the adjacent first gate line column and the second gate line column, the first end is connected to the first fine gate, and the second end is connected to the second fine gate. The first end is inclined relative to the second end in a direction close to the first fine gate and away from one end of the second fine gate.

[0025] In one embodiment, in the same first fine grid, the size of the first fine grid along the second direction is the same everywhere in the first direction; and / or,

[0026] In the same second fine grid, the size of the second fine grid along the second direction is the same everywhere in the first direction.

[0027] In one embodiment, the first fine grid includes a first overlapping segment, the first overlapping segment is located in the overlapping region, and a dimension of at least a portion of the first overlapping segment along the second direction is greater than a dimension of the remaining portion of the first fine grid along the second direction; and / or,

[0028] The second fine grid includes a second overlapping segment located in the overlapping region. A dimension of at least a portion of the second overlapping segment along the second direction is greater than a dimension of the remaining portion of the second fine grid along the second direction.

[0029] In one embodiment, there are multiple busbars connected between adjacent first gate line columns and second gate line columns, and the multiple busbars are arranged at intervals along the first direction.

[0030] In one embodiment, in adjacent first gate line columns and second gate line columns, the first fine gates and the second fine gates are alternately arranged along the second direction, and in at least partially adjacent two first fine gates and a second fine gate located between the two adjacent first fine gates, the distance between the first fine gates and the second fine gate is equal to half the distance between the two first fine gates.

[0031] In one embodiment, in adjacent first gate line columns and second gate line columns, the first fine gates and the second fine gates are alternately arranged along the second direction, and in at least partially adjacent two second fine gates and the first fine gate located between the two adjacent second fine gates, the distance between the first fine gate and the second fine gate is equal to half the distance between the two second fine gates.

[0032] In a second aspect, an embodiment of the present application provides a screen for manufacturing solar cells, the screen comprising:

[0033] A fine grid screen plate, comprising a fine grid screen plate body, wherein a plurality of first grid line slit columns and a plurality of second grid line slit columns are provided on the fine grid screen plate body, wherein the first grid line slit columns and the second grid line slit columns are alternately arranged along a first direction; the first grid line slit columns include a plurality of first fine grid slits arranged along a second direction, and the second grid line slit columns include a plurality of second fine grid slits arranged along the second direction; in adjacent first grid line slit columns and second grid line slit columns, the first fine grid slits and the second fine grid slits are staggered in the first direction; the first grid line slit columns and the second grid line slit columns have an overlapping region, and portions of the first fine grid slits and portions of the second fine grid slits are both located in the overlapping region;

[0034] The main grid plate comprises a main grid plate body, on which a plurality of main grid gaps are arranged at intervals along a first direction, and the main grid gaps are arranged correspondingly to the first fine grid gap and the second fine grid gap located in the overlapping area. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] Figure 1 A schematic diagram of the electrode structure provided in an embodiment of the present application.

[0036] Figure 2 A schematic structural diagram of a first gate line column and a second gate line column provided in an embodiment of the present application.

[0037] Figure 3 Another structural schematic diagram of the electrode structure provided in an embodiment of the present application.

[0038] Figure 4 Another structural schematic diagram of the first gate line column and the second gate line column provided in an embodiment of the present application.

[0039] Figure 5 Another structural schematic diagram of the first gate line column and the second gate line column provided in an embodiment of the present application.

[0040] Figure 6 Another structural schematic diagram of the electrode structure provided in an embodiment of the present application.

[0041] Figure 7 for Figure 6 Schematic diagram of the enlarged structure of C in the middle.

[0042] Figure 8 Another structural schematic diagram of the electrode structure provided in an embodiment of the present application.

[0043] Figure 9 for Figure 1 Schematic diagram of the enlarged structure of A in the middle.

[0044] Figure 10 for Figure 1 Another enlarged structural diagram of A in the middle.

[0045] Description of reference numerals:

[0046] 100, electrode structure; 100a, first middle region; 100b, first edge region; 100c, second middle region; 100d, second edge region; 101, gate line group; 110, first gate line column; 111, first fine gate; 1111, first overlapping segment; 1112, first non-overlapping segment; 120, second gate line column; 122, second fine gate; 1221, second overlapping segment; 1222, second non-overlapping segment; 130, main gate; 131, sub-main gate; 1311, first end; 1312, second end; X, first direction; Y, second direction. DETAILED DESCRIPTION

[0047] To make the above-mentioned objects, features, and advantages of the present application more clearly understood, the specific embodiments of the present application are described in detail below with reference to the accompanying drawings. The following description sets forth many specific details to facilitate a full understanding of the present application. However, the present application can be implemented in many other ways than those described herein, and those skilled in the art can make similar improvements without violating the scope of the present application. Therefore, the present application is not limited to the specific embodiments disclosed below.

[0048] In the description of this application, it should be understood that if the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. appear, the orientation or position relationship indicated by these terms is based on the orientation or position relationship shown in the accompanying drawings, which is only for the convenience of describing this application and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on this application.

[0049] In addition, if the terms "first" or "second" appear, these terms are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly specify the number of technical features indicated. Therefore, a feature specified as "first" or "second" may explicitly or implicitly include at least one of such features. In the description of this application, if the term "plurality" appears, "plurality" means at least two, for example, two, three, etc., unless otherwise specifically defined.

[0050] In this application, unless otherwise specified or limited, the terms "mounted," "connected," "connected," "fixed," etc., should be interpreted broadly. For example, these terms may refer to fixed connections, removable connections, or integration; mechanical connections or electrical connections; direct connections or indirect connections through an intermediary; and internal communication between two components or interaction between two components, unless otherwise specified. Those skilled in the art will understand the specific meanings of these terms in this application based on the specific circumstances.

[0051] In this application, unless otherwise expressly specified or limited, if a first feature is described as being "above" or "below" a second feature, or similar descriptions, this may mean that the first and second features are in direct contact, or that the first and second features are in indirect contact through an intermediate medium. Furthermore, when a first feature is described as being "above," "above," or "above" a second feature, it may mean that the first feature is directly above or diagonally above the second feature, or simply means that the first feature is at a higher level than the second feature. When a first feature is described as being "below," "below," or "below" a second feature, it may mean that the first feature is directly below or diagonally below the second feature, or simply means that the first feature is at a lower level than the second feature.

[0052] It should be noted that if an element is referred to as being "fixed to" or "disposed on" another element, it may be directly on the other element or there may be an intermediate element. If an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be an intermediate element. If any, the terms "vertical", "horizontal", "upper", "lower", "left", "right" and similar expressions used in this application are for illustrative purposes only and do not represent the only embodiment.

[0053] In related art, a solar cell includes a semiconductor substrate on which a plurality of fine grids are disposed. The fine grids extend along a first direction and are spaced apart along a second direction. Each fine grid includes a plurality of sub-fine grids spaced apart along the first direction, with two adjacent sub-fine grids connected by a main grid. A "centipede foot"-shaped overlap structure is provided on both sides of the main grid along the first direction. The overlap structure includes a first extension portion and a second extension portion. The first extension portion extends along the first direction, and the second extension portion extends along the second direction. The ends of the first extension portion are respectively connected to the middle portions of the main grid and the second extension portion along the second direction. The provision of the overlap structure helps ensure overlap between the sub-fine grids and the main grid.

[0054] However, when aligning the sub-fine gate and the main gate, alignment in the first direction and the second direction is required. The sub-fine gate and the main gate have alignment requirements in two directions, which makes the alignment of the sub-fine gate and the main gate still relatively difficult, and the alignment difficulty of the sub-fine gate and the main gate needs to be reduced.

[0055] To solve the above problems, embodiments of the present application provide a solar cell and a screen for manufacturing the solar cell, which can reduce the difficulty of aligning the first and second fine grids of adjacent first and second grid line columns with the main grid.

[0056] The following will be combined Figures 1-10 The solar cell and the screen for manufacturing the solar cell provided in the embodiments of the present application are described.

[0057] The electrode structure 100 provided in an embodiment of the present application is described below.

[0058] The present invention provides an electrode structure 100, which is used in a solar cell. The electrode structure 100 can be used to collect and transmit current. Figure 1 The electrode structure 100 includes at least one first gate line column 110 and at least one second gate line column 120. The first gate line columns 110 and the second gate line columns 120 can be alternately arranged along the first direction X, so that the first gate line columns 110 and the second gate line columns 120 are arranged more evenly along the first direction X. The electrode structure 100 includes a busbar 130, and adjacent first gate line columns 110 and second gate line columns 120 are connected by the busbar 130.

[0059] Exemplarily, the number of the first gate line columns 110 may be 1, 2, 3, or any number greater than 3.

[0060] Exemplarily, the number of the second gate line columns 120 may be 1, 2, 3, or any number greater than 3.

[0061] See also Figure 1 First gridline array 110 includes a plurality of first fine grids 111 arranged along a second direction Y, and second gridline array 120 includes a plurality of second fine grids 122 arranged along the second direction Y. The high-density distribution of first and second fine grids 111, 122 allows them to cover a large portion of the solar cell, shortening the distance carriers travel to the electrode structure and reducing recombination losses. A busbar aggregates the current collected by first and second fine grids 111, 122 and transmits it to an external circuit.

[0062] See also Figure 1 In adjacent first and second gate line columns 110 and 120, the first and second fine gates 111 and 122 are staggered in the first direction X. If the adjacent first and second fine gates 111 and 122 are aligned along the first direction X and located on the same straight line, external force can form a linear stress transmission path along the first and second fine gates 111 and 122, causing stress to continuously accumulate along the straight line where the first and second fine gates 111 and 122 are located, easily forming a local high stress area. The first and second fine gates 111 and 122 are staggered in the first direction X, dispersing the external force transmission path to different locations, avoiding linear superposition of stress in a single direction, thereby reducing local stress.

[0063] It should be noted that if the fine gate is a continuous, unbroken long straight fine gate from one side of the semiconductor substrate to the other along the first direction X, when the fine gate is subjected to an external force, this continuous, unbroken long straight fine gate can easily lead to stress concentration, and a certain point along the long straight line can easily break due to the force, thereby affecting the fine gate's collection of carriers. In the embodiment of the present application, the first fine gates 111 and the second fine gates 122 of the adjacent first gate line columns 110 and the second gate line columns 120 are disconnected and staggered along the first direction, so that the stress is dispersed to each disconnected first fine gate 111 and the second fine gate 122, thereby alleviating the stress concentration phenomenon on the first fine gate 111 and the second fine gate 122 and reducing the risk of fracture of the first fine gate 111 and the second fine gate 122 in the first gate line columns 110 and the second gate line columns 120.

[0064] See also Figure 1 and Figure 10In the adjacent first gate line column 110 and the second gate line column 120 , the orthographic projection of the first fine gate 111 in the second direction Y and the orthographic projection of the second fine gate 122 in the second direction Y partially overlap. Figure 1 B in FIG. 1 shows the overlapping portion of the orthographic projection of the first fine gate 111 and the second fine gate 122 in the second direction Y, which is equivalent to the first gate line column 110 and the second gate line column 120 having an overlapping region, and portions of the first fine gate 111 and the second fine gate 122 are both located in the overlapping region. Figure 1 B in the figure shows the size of the overlapping area along the first direction X. The first fine grid 111 includes a first overlapping section 1111, which overlaps with the orthographic projection of a portion of the second fine grid 122 along the second direction Y. The first overlapping section 1111 is located in the overlapping area. The first fine grid 111 also includes a first non-overlapping section 1112, which does not overlap with the orthographic projection of the second fine grid 122 along the second direction Y. The first non-overlapping section 1112 does not overlap with the overlapping area. The first non-overlapping section 1112 is located in the overlapping area. In addition, the second fine grid 122 includes a second overlapping segment 1221, which overlaps with a portion of the first fine grid 111 along the orthographic projection of the second direction Y, and the second overlapping segment 1221 is located in the overlapping area. The second fine grid 122 also includes a second non-overlapping segment 1222, which does not overlap with the orthographic projection of the first fine grid 111 along the second direction Y, and does not overlap with the overlapping area. The second non-overlapping segment 1222 is located outside the overlapping area.

[0065] See also Figure 1In the adjacent first gate line column 110 and the second gate line column 120, and the main gate 130 connected between the adjacent first gate line column 110 and the second gate line column 120, the part where the orthographic projections of the first fine gate 111 and the second fine gate 122 in the second direction Y overlap is connected to the main gate 130, which is equivalent to the first fine gate 111 and the second fine gate 122 located in the overlapping area being connected to the main gate 130. In this arrangement, by using the overlapping portion of the orthographic projections of the first fine grid 111 and the second fine grid 122 in the second direction Y to connect to the busbar 130, the busbar 130 and the first fine grid 111 and the second fine grid 122 only need to be aligned along the first direction X, and the busbar 130 and the first fine grid 111 and the second fine grid 122 do not need to be aligned along the second direction Y. As a result, the busbar 130 and the first fine grid 111 and the second fine grid 122 only need to be aligned in a single direction, which can reduce the difficulty of aligning the busbar 130 with the first fine grid 111 and the second fine grid 122. In addition, there is no need to use the "centipede foot" shaped overlap structure in the related art to ensure the overlap between the busbar 130 and the first fine grid 111 and the second fine grid 122. By eliminating the overlap structure, the consumption of the slurry of the busbar 130 is reduced, and the shading loss caused by the overlap structure can be avoided, thereby facilitating the improvement of the conversion efficiency of the solar cell.

[0066] It should be noted that, see Figure 2 and Figure 10 The first overlapping section 1111 is located at least at one end of the first fine gate 111 along the first direction X. When the first gate line column 110 is the outermost gate line column along the first direction X, the second gate line column 120 is disposed on one side of the first gate line column 110 along the first direction X, and the second gate line column 120 is not disposed on the other side of the first direction X. Figure 2 Taking the first gate line row in FIG as an example, the first gate line row 110 has only one end provided with the first overlapping section 1111. When the second gate line row 120 is provided on both sides of the first gate line row 110 along the first direction X, Figure 2 Taking the third gate line column in the figure as an example, the first gate line column 110 is provided with a first overlapping section 1111 at both ends along the first direction X, and the first non-overlapping section 1112 is located between the two first overlapping sections 1111. Correspondingly, the second overlapping section 1221 is located at at least one end of the second fine gate 122 along the first direction X. When the second gate line column 120 is the outermost gate line column along the first direction X, the first gate line column 110 is provided on one side of the second gate line column 120 along the first direction X, and the first gate line column 110 is not provided on the other side along the first direction X. Figure 2 For example, the fourth gate line row in FIG. 1 is provided with the second overlapping section 1221 at only one end of the second gate line row 120. When the first gate line row 110 is provided on both sides of the second gate line row 120 along the first direction X, Figure 2Taking the second gate line row in FIG1 as an example, both ends of the second gate line row 120 along the first direction X are provided with second overlapping sections 1221 , and the second non-overlapping section 1222 is located between the two second overlapping sections 1221 .

[0067] In some embodiments, see Figure 1 In the adjacent first gate line column 110 and the second gate line column 120, and the main gate 130 connected between the adjacent first gate line column 110 and the second gate line column 120, the overlapping size of the orthographic projections of the first fine gate 111 and the second fine gate 122 in the second direction Y is greater than or equal to the size of the main gate 130 along the first direction X. This is equivalent to the size of the overlapping area along the first direction X being greater than or equal to the size of the main gate 130 along the first direction X, thereby facilitating effective overlap of the first gate line column 110 and the second gate line column 120 with the main gate 130.

[0068] The overlapping size of the orthographic projections of the first fine gate 111 and the second fine gate 122 in the second direction Y may be the size of the overlapping portion of the orthographic projections of the first fine gate 111 and the second fine gate 122 in the second direction Y along the first direction X.

[0069] In some embodiments, see Figure 3The electrode structure 100 includes a plurality of gate line groups 101, and the plurality of gate line groups 101 are arranged along a first direction X. The gate line groups 101 include a first gate line column 110 and a second gate line column 120 arranged along the first direction X. In the same gate line group 101, the first gate line column 110 and the second gate line column 120 are adjacently arranged. In two adjacent gate line groups 101, the orthographic projection of the first fine gate 111 of one gate line group 101 and the second fine gate 122 of the other gate line group 101 in the second direction Y has an overlapping dimension D1, which is equivalent to the overlapping area of ​​the first gate line column 110 of one gate line group 101 and the second gate line column 120 of the other gate line group 101 having a dimension D1 along the first direction X. In the same gate line group 101, the overlapping dimension of the orthographic projections of the first fine gate 111 and the second fine gate 122 in the second direction Y is a second dimension D2. This is equivalent to the overlapping dimension of the first gate line column 110 and the second gate line column 120 in the same gate line group 101 along the first direction X being a second dimension D2, where the second dimension is greater than the first dimension. In this way, in two adjacent gate line groups 101, the overlapping size of the orthographic projections of the first fine gate 111 of one gate line group 101 and the second fine gate 122 of the other gate line group 101 in the second direction Y can be smaller, which is beneficial to alleviating the stress concentration phenomenon in the overlapping part of the two adjacent gate line groups 101 and reducing the risk of breakage in the overlapping part of the two adjacent gate line groups 101. In addition, in the same gate line group 101, the overlapping size of the orthographic projections of the first fine gate 111 and the second fine gate 122 in the second direction Y can be larger, so that the size of the first fine gate 111 and the second fine gate 122 in the same gate line group 101 along the first direction X is larger, which is beneficial to improving the carrier collection ability of the gate line group 101.

[0070] Exemplarily, the first dimension D1 can be smaller than half of the dimension of any one of the first fine gate 111 and the second fine gate 122 along the first direction X, so that the first dimension is smaller, which is beneficial to alleviate the stress concentration phenomenon in the overlapping part of the two adjacent gate line groups 101 and reduce the risk of breakage in the overlapping part of the two adjacent gate line groups 101.

[0071] Exemplarily, the second dimension D2 may be greater than half of the dimension of any one of the first fine gate 111 and the second fine gate 122 along the first direction X, so that in the same gate line group 101, the overlapping dimension of the orthographic projections of the first fine gate 111 and the second fine gate 122 in the second direction Y is larger, so that the dimensions of the first fine gate 111 and the second fine gate 122 in the same gate line group 101 along the first direction X are larger, which is beneficial to improving the carrier collection capability of the gate line group 101.

[0072] In other embodiments, see Figure 2In any adjacent first grid line column 110 and second grid line column 120, the overlapping size of the orthographic projections of the first fine grid 111 and the second fine grid 122 in the second direction Y can be the first size D1. At this time, in the same grid line group 101, the overlapping size of the orthographic projections of the first fine grid 111 and the second fine grid 122 in the second direction Y is also the first size D1, so that the overlapping size of any adjacent first grid line column 110 and the second grid line column 120 is small, which is beneficial to reducing the blocking of sunlight by all first fine grids 111 and all second fine grids 122, and is beneficial to reducing shading loss.

[0073] It should be noted that the preparation process of the electrode structure may include a high-temperature process (for example, a high-temperature sintering process). During the high-temperature process, the electrode structure 100 will deform, and the closer to the edge area of ​​the electrode structure 100, the greater the degree of deformation of the electrode structure 100.

[0074] In some embodiments, see Figure 4 The electrode structure 100 includes a first middle region 100a and two first edge regions 100b. The two first edge regions 100b are located on both sides of the first middle region 100a along the first direction X. The overlapping dimension of the orthographic projections of the first fine gates 111 and the second fine gates 122 of the adjacent first gate line columns 110 and the second gate line columns 120 located in the first edge regions 100b along the second direction Y is greater than the overlapping dimension of the orthographic projections of the first fine gates 111 and the second fine gates 122 of the adjacent first gate line columns 110 and the second gate line columns 120 located in the first middle region 100a along the second direction Y. The overlap size is equivalent to the size of the overlapping area of ​​the adjacent first gate line column 110 and the second gate line column 120 located in the first edge area 100b along the first direction X being greater than or equal to the size of the overlapping area of ​​the adjacent first gate line column 110 and the second gate line column 120 located in the first middle area 100a along the first direction X. In this way, it can be avoided that during the high-temperature process, the electrode structure 100 located in the first edge area 100b is excessively deformed, resulting in the adjacent first gate line column 110 and the second gate line column 120 in this area being difficult to connect with the corresponding main gate 130.

[0075] In another embodiment, the overlapping dimension of the orthographic projections of the first fine gates 111 and the second fine gates 122 of adjacent first gate line columns 110 and second gate line columns 120 located in the first edge region 100b along the second direction Y is equal to the overlapping dimension of the orthographic projections of the first fine gates 111 and the second fine gates 122 of adjacent first gate line columns 110 and second gate line columns 120 located in the first middle region 100a along the second direction Y. In this way, the arrangement of the electrode structure 100 is relatively simple, which helps to reduce the design difficulty and manufacturing difficulty of the first gate line columns 110 and second gate line columns 120.

[0076] In some embodiments, see Figure 1 In adjacent first gate line columns 110 and second gate line columns 120, at least one second fine gate 122 may be disposed between two adjacent first fine gates 111 along the second direction, and at least one first fine gate 111 may be disposed between two adjacent second fine gates 122 along the second direction. This embodiment of the present application is described using the example of alternating arrangement of the first fine gates 111 and the second fine gates 122 along the second direction Y. In the adjacent first gate line column 110 and the second gate line column 120, the first fine gates 111 and the second fine gates 122 are alternately arranged along the second direction Y, and the first overlapping sections 1111 of the first fine gate 111 close to the second fine gate 122 and the second overlapping sections 1221 of the second fine gate 122 close to the first fine gate 111 are alternately arranged along the second direction Y. In this way, in the adjacent first gate line column 110 and the second gate line column 120, the first fine gates 111 and the second fine gates 122 are arranged more evenly and regularly in the second direction Y, which is beneficial to reducing the design difficulty of the first fine gates 111 and the second fine gates 122, and is beneficial to improving the uniformity of carrier collection, and avoiding excessively high or low local current density.

[0077] It should be noted that the edges of solar cells are prone to microcracks or lattice defects when the cell is cut or packaged, which become carrier recombination centers and reduce the effective carrier concentration. In addition, during the cell preparation or packaging process, the edge area is more likely to accumulate stress due to differences in thermal expansion coefficients, leading to microcracks or lattice distortion, further aggravating recombination, and thus making the electrode structure's carrier collection in the edge area worse than that in the center area.

[0078] See also Figure 5In an embodiment in which the first fine gates 111 and the second fine gates 122 of adjacent first gate line columns 110 and second gate line columns 120 are alternately arranged along the second direction Y, the electrode structure 100 includes a second intermediate region 100c and two second edge regions 100d. The two second edge regions 100d are arranged on both sides of the second intermediate region 100c along the second direction Y. The distance between adjacent first fine gates 111 and second fine gates 122 located in the second edge region 100d along the second direction Y is smaller than the distance between adjacent first fine gates 111 and second fine gates 122 located in the second intermediate region 100c along the second direction Y. In this way, the distribution density of the first fine gates 111 and second fine gates 122 in the second edge region 100d is greater, which is beneficial to improving the collection of carriers in the second edge region 100d by the first fine gates 111 and second fine gates 122. In addition, the distribution density of the first fine gates 111 and second fine gates 122 in the second intermediate region 100c is smaller, which is beneficial to reducing the blocking of sunlight and reducing the shading loss. Alternatively, the distance along the second direction Y between adjacent first fine gates 111 and second fine gates 122 located in the second edge region 100d is equal to the distance along the second direction Y between adjacent first fine gates 111 and second fine gates 122 located in the second middle region 100c, thereby making the arrangement of the first fine gates 111 and second fine gates 122 more regular, which helps to reduce the design difficulty of the first fine gates 111 and second fine gates 122.

[0079] In some embodiments, see Figure 1 The main grid 130 is linear and extends along the second direction X. This makes the shape of the main grid 130 simpler, which helps reduce the difficulty of designing and manufacturing the main grid 130.

[0080] In other embodiments, the shape of the main grid 130 may also be a curve, a broken line, or other regular or irregular shapes.

[0081] See also Figure 6 and Figure 7In an embodiment where the first fine gates 111 and the second fine gates 122 of adjacent first gate line columns 110 and second gate line columns 120 are alternately arranged along the second direction Y, in the adjacent first gate line columns 110 and second gate line columns 120, and in the main gate 130 connected to the adjacent first gate line columns 110 and second gate line columns 120, the main gate 130 may include a plurality of sub-bus gates 131, the plurality of sub-bus gates 131 are arranged along the second direction Y, the extension directions of two adjacent sub-bus gates 131 intersect, and the two adjacent sub-bus gates 131 are connected to each other, and the sub-bus gates 131 Any two of the extension direction, the first direction, and the second direction intersect, a sub-busbar 131 is connected between adjacent first fine gates 111 and second fine gates 122, and the sub-busbar 131 includes a first end 1311 and a second end 1312 located in the extension direction, the first end 1311 is connected to the first fine gate 111, and the second end 1312 is connected to the second fine gate 122, and the distance L between the sub-busbar 131 and the first fine gate 111 along the second direction Y is from the end of the first fine gate 111 close to the second fine gate 122 to the end away from the second fine gate 122 (i.e. Figure 7 In the direction X1 from right to left in the middle, the first end 1311 is closer to the first non-overlapping section 1112 ( Figure 10 ), can be in the first overlapping section 1111 ( Figure 10 ) is relatively small, so that the first end 1311 is still easy to overlap with the first fine grid 111, and the difficulty of aligning the first end 1311 with the first fine grid 111 along the first direction X is further reduced. In addition, the second end 1312 is closer to the second non-overlapping section 1222 ( Figure 10 ), can be in the second overlapping section 1221 ( Figure 10 ) is relatively small, so that the second end 1312 is still relatively easy to overlap with the second fine grid 122, and the difficulty of aligning the second end 1312 with the second fine grid 122 along the first direction X is further reduced.

[0082] For example, the first direction and the second direction may intersect at an angle or at a right angle.

[0083] In some embodiments, see Figure 6 and Figure 7 The extension direction of the sub-busbar 131 is obliquely intersected with the first direction X. In the adjacent first gate line column 110 and the second gate line column 120, and the busbar 130 connected to the adjacent first gate line column 110 and the second gate line column 120, the first end 1311 is inclined relative to the second end 1312 in a direction close to the first fine gate 111 and away from the second fine gate 122. The end of the first fine gate 111 away from the second fine gate 122 can be Figure 7By tilting the sub-busbar 131 in this manner, the sub-busbar 131 can be easily overlapped with the first and second thin gates 111, 122, while the first and second overlapping sections 1111, 1221 are relatively small. This helps to further reduce the difficulty of aligning the sub-busbar 131 with the first and second thin gates 111, 122 along the first direction X.

[0084] In some embodiments, see Figure 9 In the same first fine gate 111 , the size of the first fine gate 111 along the second direction Y is the same everywhere in the first direction X. Thus, the structure of the first fine gate 111 is relatively simple, reducing the difficulty in designing and manufacturing the first fine gate 111 .

[0085] In some embodiments, see Figure 9 In the same second fine gate 122 , the size of the second fine gate 122 along the second direction Y is the same everywhere in the first direction X. Thus, the structure of the second fine gate 122 is relatively simple, which helps to reduce the difficulty of designing and manufacturing the second fine gate 122 .

[0086] In some embodiments, see Figure 10 In the same first fine gate 111, the dimension of at least part of the first overlapping segment 1111 along the second direction Y is larger than the dimension of the remaining portion of the first fine gate 111 along the second direction Y. This is beneficial to increasing the overlapping area between the main gate 130 and the first overlapping segment 1111, thereby facilitating reducing the overlapping impedance between the main gate 130 and the first overlapping segment 1111.

[0087] In some embodiments, see Figure 10 In the same second fine gate 122, the dimension of at least part of the second overlapping segment 1221 along the second direction Y is larger than the dimension of the remaining part of the second fine gate 122 along the second direction Y. This is beneficial to increase the overlapping area between the main gate 130 and the second overlapping segment 1221, thereby facilitating the reduction of the overlapping impedance between the main gate 130 and the second overlapping segment 1221.

[0088] In some embodiments, see Figure 1 and see Figure 8 , the number of the main gate 130 connected between the adjacent first gate line column 110 and the second gate line column 120 is at least one. Figure 8 When there are multiple bus bars 130 connected between adjacent first gate line columns 110 and second gate line columns 120, the multiple bus bars 130 are arranged at intervals along the first direction Y. In this way, if there is a deviation in the printing of a bus bar 130 (such as offset or breakage), the adjacent bus bars 130 can still provide redundant current channels, thereby reducing the overall defective rate and improving the process fault tolerance of the bus bars 130.

[0089] In some embodiments, see Figure 1 In an embodiment in which the first fine gates 111 and the second fine gates 122 of adjacent first gate line columns 110 and second gate line columns 120 are alternately arranged along the second direction Y, in at least partially adjacent two first fine gates 111 and the second fine gate 122 located between the two adjacent first fine gates 111, the distance between the first fine gate 111 and the second fine gate 122 is equal to half the distance between the two first fine gates 111. In this way, the distances between the second fine gate 122 and the two first fine gates 111 along the second direction Y are the same, so that the second fine gate 122 and the two first fine gates 111 are uniformly arranged along the second direction Y, which is beneficial to improving the uniformity of carrier collection and avoiding excessively high or low local current density.

[0090] It should be noted that, in the same first gate line column 110, the distance between at least partially adjacent two first fine gates 111 can be the first distance, which can mean that the distance between partially adjacent two first fine gates 111 can be the first distance, and the distance between another partially adjacent two first fine gates 111 can be the second distance, or the distance between every two adjacent first fine gates 111 can be the first distance.

[0091] In some embodiments, in an implementation where the first fine gates 111 and the second fine gates 122 of adjacent first gate line columns 110 and second gate line columns 120 are alternately arranged along the second direction Y, in at least partially adjacent two second fine gates 122 and the first fine gate 111 located between the two adjacent second fine gates 122, the distance between the first fine gate 111 and the second fine gate 122 is equal to half the distance between the two second fine gates 122. In this way, the distances between the first fine gate 111 and the two second fine gates 122 along the second direction Y are the same, so that the first fine gate 111 and the two second fine gates 122 are uniformly arranged along the second direction Y, which is beneficial to improving the uniformity of carrier collection and avoiding excessively high or low local current density.

[0092] Illustratively, the material of at least one of the first fine gate 111 , the second fine gate 122 and the main gate 130 may include any one or more of metal materials such as silver, copper, aluminum, lead, nickel, titanium, tin, etc., conductive polymers, and graphene.

[0093] For example, at least one of the first fine grid 111 , the second fine grid 122 and the main grid 130 may be formed by stencil printing, screen printing, laser transfer, jet printing, gravure printing or the like.

[0094] The solar cell provided in the embodiments of the present application is described below.

[0095] The embodiment of the present application provides a solar cell, which includes the electrode structure 100 in the above embodiment. The solar cell may include the electrode structure 100 and a solar cell body, and the electrode structure 100 may be disposed on the solar cell body.

[0096] Solar cells can include heterojunction solar cells (HJT), back contact cells (BC), tunnel oxide passivating contact cells (TOPCON), heterojunction back contact cells (HBC), hybrid passivated back contact cells (HBC), passivated emitter rear cell (PERC), interdigitated back contact cells (IBC), etc.

[0097] The photovoltaic module provided in the embodiments of the present application is described below.

[0098] The present application provides a photovoltaic module, comprising the solar cell of the above-described embodiment. The photovoltaic module may include at least one solar cell. The present application uses the example of a photovoltaic module containing multiple solar cells as an example, where the multiple solar cells together constitute a cell string layer.

[0099] In some embodiments, a photovoltaic module may include a first encapsulation member and a second encapsulation member located on either side of a cell string layer. The first encapsulation member and the second encapsulation member encapsulate the cell string layer to protect the cell string layer. The first encapsulation member and the second encapsulation member may include an encapsulation adhesive layer and a cover plate. The encapsulation adhesive layer is located on the side of the cover plate facing the cell string layer. The cover plate can protect the cell string layer. The encapsulation adhesive layer can be used to connect the cover plate and the cell string layer.

[0100] The following describes the screen provided in the embodiments of the present application.

[0101] An embodiment of the present application provides a screen, which is used to print and prepare the electrode structure 100 of the solar cell in the above embodiment. The screen includes a fine grid screen and a main grid screen. The fine grid screen can be used to print the first fine grid 111 and the second fine grid 122, and the main grid screen can be used to print the main grid 130.

[0102] The fine grid screen includes a fine grid screen body, on which a plurality of first grid line slit columns and a plurality of second grid line slit columns are arranged, and the first grid line slit columns and the second grid line slit columns are alternately arranged along the first direction X; the first grid line slit columns include a plurality of first fine grid slits arranged along the second direction Y, and the second grid line slit columns include a plurality of second fine grid slits arranged along the second direction Y. In adjacent first grid line slit columns and second grid line slit columns, the first fine grid slits and the second fine grid slits are staggered in the first direction X, and the orthographic projection of the first fine grid slit in the second direction Y and the orthographic projection of the second fine grid slit in the second direction Y partially overlap, which is equivalent to the first grid line slit column and the second grid line slit column having an overlapping area, and portions of the first fine grid slit and the second fine grid slit are both located in the overlapping area. The first gate line gap column corresponds to the first gate line column 110, the first fine gate gap corresponds to the first fine gate 111, the first fine gate 111 is formed by the corresponding first fine gate gap, and in the process of printing the first fine gate 111, the first fine gate gap and the first fine gate 111 can overlap. The second gate line gap column corresponds to the second gate line column 120, the second fine gate gap corresponds to the second fine gate 122, the second fine gate 122 is formed by the corresponding second fine gate gap, and in the process of printing the second fine gate 122, the second fine gate gap and the second fine gate 122 can overlap. The arrangement of the first fine gate 111 of the electrode structure 100 is the same as the arrangement of the first fine gate gap of the fine grid screen, and the arrangement of the second fine gate 122 of the electrode structure 100 is the same as the arrangement of the second fine gate gap of the fine grid screen. The first fine gate gap and the second fine gate gap run through the fine grid screen body.

[0103] It should be noted that if a complete, continuous, and unbroken long straight line fine grid is printed from one side of the semiconductor substrate to the other side along the first direction X, the fine grid screen needs to be provided with a continuous, unbroken long straight line fine grid gap. When the fine grid screen is subjected to external force, this continuous long straight line fine grid gap can easily lead to stress concentration, and a certain point along the long straight line can easily be damaged due to the force, thereby making the long straight line fine grid gap easy to crack due to stress concentration, causing the fine grid screen to be scrapped. In addition, the longer fine grid gap will weaken the overall rigidity of the fine grid screen, resulting in a decrease in the local tension of the fine grid screen. Therefore, the embodiment of the present application is conducive to alleviating the stress concentration phenomenon of the fine grid screen by disconnecting the first fine grid gap and the second fine grid gap of the adjacent first grid line gap column and the second grid line gap column and staggering them along the first direction, and also enables the entire fine grid screen to maintain appropriate tension.

[0104] In some embodiments, the busbar grid plate includes a busbar grid plate body, on which a plurality of busbar slits are disposed, the plurality of busbar slits being arranged at intervals along a first direction X. The busbar slits correspond to the busbar 130, and the busbar 130 is formed by the corresponding busbar slits. During the printing process of the busbar 130, the busbar slits and the busbar 130 may overlap. The arrangement of the busbar 130 of the electrode structure 100 is the same as the arrangement of the busbar slits of the busbar grid plate. The busbar slits may extend through the busbar grid plate body. The portion where the orthographic projections of the first fine grid slit and the second fine grid slit in the second direction Y overlap is disposed correspondingly to the busbar slits, equivalently, the busbar slits are disposed correspondingly to the first fine grid slit and the second fine grid slit located in the overlapping region, and the first fine grid 111 and the second fine grid slit 122 formed by the portion where the orthographic projections of the first fine grid slit and the second fine grid slit in the second direction Y overlap are connected to the busbar 130 formed by the corresponding busbar slits.

[0105] For example, slurry is poured onto the fine grid body of a fine grid plate, and a scraper is used to move the slurry across the fine grid body, allowing the slurry to penetrate the first and second fine grid gaps in the fine grid body and be squeezed onto the solar cells, forming corresponding first and second fine grids 111 and 122 on the solar cells. Similarly, the busbar plate can form corresponding busbars 130 on the solar cells through the busbar gaps.

[0106] In the adjacent first gate line slit column and the second gate line slit column, and the main gate slit corresponding to the adjacent first gate line slit column and the second gate line slit column, the overlapping size of the positive projection of the first fine gate slit and the second fine gate slit in the second direction Y is greater than or equal to the size of the main gate slit along the first direction X.

[0107] In some embodiments, the fine grid screen includes a plurality of grid line slit groups, the plurality of grid line slit groups are arranged along a first direction X, and the grid line slit groups include a first grid line slit column and a second grid line slit column arranged along the first direction X; in two adjacent grid line slit groups, the overlapping dimension of the orthographic projections of the first fine grid slit of one grid line slit group and the second fine grid slit of the other grid line slit group in the second direction Y is a first dimension, and in the same grid line slit group, the overlapping dimension of the orthographic projections of the first fine grid slit and the second fine grid slit in the second direction Y is a second dimension, and the second dimension is greater than the first dimension.

[0108] In some embodiments, the first size is smaller than half of the size of either the first fine grid gap or the second fine grid gap along the first direction X. Thus, the first size is smaller, which is beneficial to alleviate the stress concentration phenomenon in the overlapping part of two adjacent grid line gap groups and increase the tension of the fine grid screen.

[0109] In some embodiments, the second size is greater than half of the size of any one of the first fine gate gap and the second fine gate gap along the first direction X.

[0110] In some embodiments, in adjacent first gate line slit columns and second gate line slit columns, at least one second gate line slit may be provided between two adjacent first gate line slits, and at least one first gate line slit may be provided between two adjacent second gate line slits. The present application uses the example of alternating arrangement of first and second gate line slits along the second direction Y.

[0111] In some embodiments, the fine grid screen includes a first middle region and two first edge regions, the two first edge regions are located on both sides of the first middle region along the first direction X, the first edge region of the fine grid screen corresponds to the first edge region of the electrode structure, the first middle region of the fine grid screen corresponds to the first middle region of the electrode structure, and the overlapping dimensions of the positive projections of adjacent first fine grid gaps and second fine grid gaps located in the first edge region along the second direction Y are greater than or equal to the overlapping dimensions of the positive projections of adjacent first fine grid gaps and second fine grid gaps located in the first middle region along the second direction Y.

[0112] In an embodiment in which the first fine gate gaps and the second fine gate gaps of adjacent first gate line gap columns and second gate line gap columns are alternately arranged along the second direction Y, the fine grid screen includes a second middle area and two second edge areas, the two second edge areas are arranged on both sides of the second middle area along the second direction Y, the second edge area of ​​the fine grid screen corresponds to the second edge area 100d of the electrode structure 100, and the second middle area of ​​the fine grid screen corresponds to the second middle area 100c of the electrode structure 100, and the distance between adjacent first fine gate gaps and second fine gate gaps located in the second edge area along the second direction Y is less than or equal to the distance between adjacent first fine gate gaps and second fine gate gaps located in the second middle area along the second direction Y.

[0113] In some embodiments, the busbar slits are linear and extend along the first direction X. This makes the structure of the busbar slits simpler and reduces the difficulty of manufacturing the busbar slits.

[0114] In some embodiments, in an implementation where the first fine gate gaps and the second fine gate gaps of adjacent first gate line gap columns and second gate line gap columns are alternately arranged along the second direction Y, in the adjacent first gate line gap columns and the second gate line gap columns, and the main gate gaps corresponding to the adjacent first gate line gap columns and the second gate line gap columns, the main gate gap includes a plurality of sub-main gate gaps, and the plurality of sub-main gate gaps are arranged along the second direction Y, and the extension directions of two adjacent sub-main gate gaps intersect and are connected to each other. A sub-main gate gap is correspondingly arranged between the adjacent first fine gate gaps and the second fine gate gaps, and the distance between the two adjacent sub-main gate gaps along the second direction gradually changes, and the distance between the sub-main gate gap and the first fine gate gap along the second direction Y gradually decreases from the direction along the first fine gate gap close to one end of the second fine gate gap to the direction away from one end of the second fine gate gap.

[0115] In some embodiments, the extension direction of the sub-busbar slit is obliquely intersected with the first direction X, and the sub-busbar slit includes a first end and a second end located in the extension direction. In adjacent first gate line slit columns and second gate line slit columns, and in the busbar slits corresponding to the adjacent first gate line slit columns and second gate line slit columns, the first end is disposed correspondingly to the first fine gate slit, and the second end is disposed correspondingly to the second fine gate slit. The first end is disposed obliquely relative to the second end, toward the first fine gate slit and away from one end of the second fine gate slit. The first end of a sub-busbar prepared through the first end of the sub-busbar slit is connected to a first fine gate prepared through the corresponding first fine gate slit, and the second end of a sub-busbar prepared through the second end of the sub-busbar slit is connected to a second fine gate prepared through the corresponding second fine gate slit.

[0116] In some embodiments, in the same first fine gate slit, the size of the first fine gate slit along the second direction Y is the same everywhere in the first direction X. This makes the structure of the first fine gate slit simpler, which helps to reduce the difficulty of manufacturing the first fine gate slit.

[0117] In some embodiments, in the same second fine gate slit, the size of the second fine gate slit along the second direction Y is the same everywhere in the first direction X. This makes the structure of the second fine gate slit simpler, which helps to reduce the difficulty of manufacturing the second fine gate slit.

[0118] In some embodiments, the first fine gate gap includes an overlapping segment, the overlapping segment of the first fine gate gap overlaps with the positive projection of a portion of the second fine gate gap along the second direction Y, and the dimension of at least a portion of the overlapping segment of the first fine gate gap along the second direction Y is greater than the dimension of the remaining portion of the first fine gate gap along the second direction Y.

[0119] In some embodiments, the second fine gate gap includes an overlapping segment, the overlapping segment of the second fine gate gap overlaps with the positive projection of the first fine gate gap along the second direction Y, and the dimension of at least part of the overlapping segment of the second fine gate gap along the second direction Y is greater than the dimension of the remaining part of the second fine gate gap along the second direction Y.

[0120] In some embodiments, there are multiple main gate slits corresponding to adjacent first gate line slit columns and second gate line slit columns, and the multiple main gate slits are arranged at intervals along the second direction Y.

[0121] In some embodiments, in two first fine gate gaps that are at least partially adjacent along the second direction Y and a second fine gate gap located between the two adjacent first fine gate gaps, the distance between the first fine gate gap and the second fine gate gap along the second direction is equal to half of the distance between the two first fine gate gaps along the second direction, which is beneficial to improving the uniformity of the distribution of the first fine gate gap and the second fine gate gap along the second direction and to ensuring uniform stress distribution.

[0122] In some embodiments, in two second fine gate gaps that are at least partially adjacent along the second direction Y and a first fine gate gap located between the two adjacent second fine gate gaps, the distance between the first fine gate gap and the second fine gate gap along the second direction is equal to half of the distance between the two second fine gate gaps along the second direction, which is beneficial to improving the uniformity of the distribution of the first fine gate gap and the second fine gate gap along the second direction and to ensuring uniform stress distribution.

[0123] The technical features of the above-mentioned embodiments can be combined arbitrarily. In order to make the description concise, not all possible combinations of the technical features in the above-mentioned embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0124] The above-described embodiments merely represent several implementation methods of the present application. While the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that a person of ordinary skill in the art may make various modifications and improvements without departing from the spirit of the present application, and these modifications and improvements fall within the scope of protection of the present application. Therefore, the scope of protection of the present patent application shall be determined by the appended claims.

Claims

1. A solar cell, characterized in that: The solar cell comprises: a plurality of first gate line columns and a plurality of second gate line columns, wherein the first gate line columns and the second gate line columns are alternately arranged along a first direction; the first gate line columns include a plurality of first fine gates arranged along a second direction, and the second gate line columns include a plurality of second fine gates arranged along the second direction; in adjacent first gate line columns and second gate line columns, the first fine gates and the second fine gates are staggered in the first direction; the first gate line columns and the second gate line columns have an overlapping region, and portions of the first fine gates and portions of the second fine gates are both located in the overlapping region; A main gate, wherein the adjacent first gate line column and the adjacent second gate line column are connected via the main gate, and in the adjacent first gate line column and the adjacent second gate line column, and in the main gate connected between the adjacent first gate line column and the adjacent second gate line column, the first fine gate and the second fine gate located in the overlapping area are connected to the main gate; The solar cell comprises: a plurality of grid line groups arranged along the first direction; the grid line groups comprise a first grid line column and a second grid line column arranged along the first direction; In two adjacent gate line groups, the size of the overlapping area of ​​the first gate line column of one gate line group and the second gate line column of the other gate line group along the first direction is a first size; In the same gate line group, the size of the overlapping area of ​​the first gate line column and the second gate line column along the first direction is the second size; The second size is larger than the first size.

2. The solar cell according to claim 1, wherein In the adjacent first gate line column and the second gate line column, and the main gate connected between the adjacent first gate line column and the second gate line column, the size of the overlapping area along the first direction is greater than or equal to the size of the main gate along the first direction.

3. The solar cell according to claim 1, wherein The first size is smaller than half of the size of any one of the first fine grid and the second fine grid along the first direction; and / or, The second size is greater than half of a size of either the first fine grid or the second fine grid along the first direction.

4. The solar cell according to any one of claims 1 to 3, characterized in that: The solar cell includes a first middle region and two first edge regions, wherein the two first edge regions are located on both sides of the first middle region along the first direction; A size of the overlapping region along the first direction between the adjacent first gate line columns and the second gate line columns located in the first edge region is greater than or equal to a size of the overlapping region along the first direction between the adjacent first gate line columns and the second gate line columns located in the first middle region.

5. The solar cell according to any one of claims 1 to 3, characterized in that: In adjacent first gate line columns and second gate line columns, the first fine gates and the second fine gates are alternately arranged along the second direction; The solar cell includes a second middle region and two second edge regions, wherein the two second edge regions are arranged on both sides of the second middle region along the second direction; A distance between adjacent first fine gates and second fine gates located in the second edge region along the second direction is less than or equal to a distance between adjacent first fine gates and second fine gates located in the second middle region along the second direction.

6. The solar cell according to any one of claims 1 to 3, characterized in that: The main grid is in a straight line shape and extends along the second direction.

7. The solar cell according to any one of claims 1 to 3, characterized in that: In the adjacent first gate line column and the second gate line column, and the main gate connected to the adjacent first gate line column and the second gate line column, the first fine gate and the second fine gate are alternately arranged along the second direction, the main gate includes a plurality of sub-main gates, the plurality of sub-main gates are arranged along the second direction, the extension directions of two adjacent sub-main gates intersect and are connected to each other, a sub-main gate is connected between the adjacent first fine gate and the second fine gate, and the distance between the sub-main gate and the first fine gate along the second direction gradually decreases from the direction along the first fine gate close to one end of the second fine gate to the direction away from one end of the second fine gate.

8. The solar cell according to claim 7, characterized in that The extension direction of the sub-busbar is obliquely intersected with the first direction, and the sub-busbar includes a first end and a second end located in the extension direction. In the adjacent first gate line column and the second gate line column, and the busbar connected to the adjacent first gate line column and the second gate line column, the first end is connected to the first fine gate, and the second end is connected to the second fine gate. The first end is inclined relative to the second end in a direction close to the first fine gate and away from one end of the second fine gate.

9. The solar cell according to any one of claims 1 to 3, characterized in that: In the same first fine grid, the size of the first fine grid along the second direction is the same everywhere in the first direction; and / or, In the same second fine grid, the size of the second fine grid along the second direction is the same everywhere in the first direction.

10. The solar cell according to any one of claims 1 to 3, characterized in that: The first fine grid includes a first overlapping segment, the first overlapping segment is located in the overlapping region, and a dimension of at least a portion of the first overlapping segment along the second direction is larger than a dimension of the remaining portion of the first fine grid along the second direction; and / or, The second fine grid includes a second overlapping segment located in the overlapping region, and a dimension of at least a portion of the second overlapping segment along the second direction is greater than a dimension of the remaining portion of the second fine grid along the second direction.

11. The solar cell according to any one of claims 1 to 3, characterized in that: There are multiple busbars connected between adjacent first gate line columns and second gate line columns, and the multiple busbars are arranged at intervals along the first direction.

12. The solar cell according to any one of claims 1 to 3, characterized in that: In adjacent columns of the first gate line and the second gate line, the first fine gates and the second fine gates are alternately arranged along the second direction, and in at least partially adjacent two first fine gates and the second fine gate located between the two adjacent first fine gates, the distance between the first fine gates and the second fine gate is equal to half the distance between the two first fine gates.

13. The solar cell according to any one of claims 1 to 3, characterized in that: In adjacent columns of the first gate line and the second gate line, the first fine gates and the second fine gates are alternately arranged along the second direction, and in at least partially adjacent two second fine gates and the first fine gate located between the two adjacent second fine gates, the distance between the first fine gate and the second fine gate is equal to half the distance between the two second fine gates.

14. A screen for manufacturing solar cells, characterized in that: The screen plate includes: A fine grid plate, comprising a fine grid plate body, the fine grid plate body being provided with a plurality of first grid line slit columns and a plurality of second grid line slit columns, the first grid line slit columns and the second grid line slit columns being alternately arranged along a first direction; the first grid line slit columns comprising a plurality of first fine grid slits arranged along a second direction, the second grid line slit columns comprising a plurality of second fine grid slits arranged along the second direction, in adjacent first grid line slit columns and second grid line slit columns, the first fine grid slits and the second fine grid slits being staggered in the first direction, the first grid line slit columns and the second grid line slit columns having an overlapping region, wherein portions of the first fine grid slits and portions of the second fine grid slits are both located in the overlapping region; A busbar plate, comprising a busbar plate body, wherein a plurality of busbar slits are provided on the busbar plate body, wherein the plurality of busbar slits are arranged at intervals along the first direction, and the busbar slits are provided corresponding to the first fine grid slits and the second fine grid slits located in the overlapping region; The fine grid screen includes a plurality of grid line slit groups, the plurality of grid line slit groups are arranged along a first direction, and the grid line slit group includes a first grid line slit column and a second grid line slit column arranged along the first direction; In two adjacent gate line slit groups, an overlapping size of the orthographic projections of the first fine gate slits of one gate line slit group and the second fine gate slits of the other gate line slit group in the second direction is a first size; In the same gate line slit group, an overlapping size of the orthographic projections of the first fine gate slit and the second fine gate slit in the second direction is a second size; The second size is larger than the first size.

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