Integrated solid state relay
Through the electromagnetic coupling and shielding layer design of the transmitting and receiving dies, high coupling and electrical isolation of the signal isolation device at high voltage is achieved, solving the problem of low coupling coefficient of existing devices at high voltage, and is suitable for safety and level conversion applications.
Patent Information
- Application Number
- CN202510126819.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2024-10-22
- Filing Date
- 2025-01-27
- Publication Date
- 2025-08-05
AI Technical Summary
The existing signal isolation devices operate at high voltages with lower coupling coefficients and larger devices, and require separate discrete component interconnections.
A signal isolation device is adopted, including a transmitting die and a receiver die. Through the electromagnetic coupling of the transmitting coil and the receiving coil, combined with the shielding layer and the coupler area, high coupling and electrical isolation of the signal are achieved, and a switching drive signal is generated using a signal generator, power converter and driver circuit to realize signal transmission at high voltage.
Signal isolation with high coupling coefficient is achieved in compact packages, suitable for safety, level conversion and multiplexing, reducing noise interference, and suitable for high voltage environments.
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Figure CN120433767A_ABST
Abstract
Description
[0001] Related applications
[0002] This application claims priority to U.S. Provisional Patent Application Serial No. 63 / 549,663, filed on February 5, 2024, “SIGNAL ISOLATOR WITH INTEGRAL ELECTROMAGNETICSHIELD,” all contents of which are hereby incorporated by reference in their entirety for all purposes. Technical Field
[0003] The described embodiments generally relate to electronic devices that isolate input signals from output signals. More specifically, the embodiments relate to electronic devices that receive an input signal and, in response, generate an isolated drive signal to a solid-state switch that transitions from an off state to an on state. Background Art
[0004] There are currently a variety of electronic devices that isolate input signals from output signals. Current electronic devices have limited operating voltages and relatively low coupling coefficients. In addition, many current electronic devices are relatively large and / or require interconnection of separate discrete components.
[0005] There is a need for a signal isolator device that is integrated, compact, and operates at relatively high voltages with relatively high coupling coefficients. Summary of the Invention
[0006] In some embodiments, a signal isolation device includes a transmitter die comprising a pair of input terminals coupled to a pair of transmitter output terminals. A receiver die comprises a pair of receiver input terminals, a pair of output terminals, and a coupler region, wherein the transmitter die is attached to a top surface of the receiver die. The coupler region comprises: a transmitter coil connected to the pair of transmitter output terminals; a receiver coil positioned proximate to the transmitter coil and connected to the pair of output terminals; a receiver circuit system; and a shield layer positioned between the receiver circuit system and the receiver coil. In various embodiments, the signal isolation device includes a signal generator that generates a time-varying voltage at the pair of transmitter output terminals in response to receiving an input signal at the pair of input terminals.
[0007] In some embodiments, the time-varying voltage is coupled to the transmitting coil, and in response to receiving the time-varying voltage, the transmitting coil induces the receiver coil to generate an intermediate signal corresponding to the input signal. In various embodiments, the receiver die includes a power converter circuit that receives the intermediate signal and, in response, generates a DC voltage. In some embodiments, the receiver die includes a driver circuit that generates a switch drive signal in response to receiving the DC voltage. In various embodiments, the switch drive signal is coupled to a transistor that transitions from an off state to an on state in response to receiving the switch drive signal.
[0008] In some embodiments, the signal isolation device further includes a power storage device coupled to a control circuit system, wherein the control circuit system is arranged to receive the intermediate signal, and in response to receiving the intermediate signal, the control circuit system causes the power storage device to generate a DC signal. In various embodiments, the receiver die includes a power converter circuit, which is arranged to receive the intermediate signal, and in response to receiving the intermediate signal, the power converter circuit generates a first DC signal at a first voltage and a second DC signal at a second voltage, wherein the first voltage is greater than the second voltage. In some embodiments, the receiver circuit system includes a data communication circuit system that demodulates a data signal from the intermediate signal. In various embodiments, the signal isolation device further includes an encapsulant that at least partially encapsulates the transmitter die and the receiver die.
[0009] In some embodiments, a signal isolation device includes a transmitter die comprising an input coupled to a transmitter output; and a receiver die comprising a receiver input, an output, and a coupler region, wherein the receiver input is connected to the transmitter output, and wherein the coupler region includes: a transmitter coil connected to the receiver input; a receiver coil connected to the output; a receiver circuit system; and a shield positioned between the receiver circuit system and the receiver coil.
[0010] In various embodiments, the signal isolator transmit die includes a signal generator that generates a time-varying voltage at the transmitter output in response to receiving an input signal at the input. In some embodiments, the signal isolator time-varying voltage is coupled to the transmit coil, and in response to receiving the time-varying voltage, the transmit coil induces the receiver coil to generate an intermediate signal corresponding to the input signal.
[0011] In various embodiments, the signal isolator receiver die includes a power converter circuit configured to receive the intermediate signal, wherein in response to receiving the intermediate signal, the power converter circuit generates a first DC signal at a first voltage and a second DC signal at a second voltage, wherein the first voltage is greater than the second voltage. In some embodiments, the signal isolator receiver circuitry includes data communications circuitry that demodulates a data signal from the intermediate signal.
[0012] In various embodiments, the signal isolation device receiver die includes a driver circuit that receives the DC signal and, in response to receiving the DC signal, generates a switch drive signal. In some embodiments, the signal isolation device is configured to couple the switch drive signal to a transistor that transitions from an off state to an on state in response to receiving the switch drive signal. In various embodiments, the signal isolation device further includes an encapsulant that at least partially encapsulates the transmitter die and the receiver die. BRIEF DESCRIPTION OF THE DRAWINGS
[0013] Figure 1A depicts an illustrative drawing of a signal isolator according to some embodiments of the present disclosure;
[0014] Figure 1B Depicts Figure 1A A simplified cross-sectional view of a signal isolator is shown;
[0015] Figure 1C Shown Figure 1A and 1B A simplified block diagram of a signal isolator is shown;
[0016] Figure 2 Demonstrated that it can be used Figure 1A and 1B A simplified plan view of a shield for a signal isolator is shown;
[0017] Figure 3 shows a simplified partial cross-sectional view of a portion of a signal isolation device according to some embodiments of the present disclosure;
[0018] Figure 4A shows a partial plan view of a second shielding layer according to some embodiments of the present disclosure;
[0019] Figure 4B Shown Figure 4A a partial cross-sectional view of the second shielding layer shown;
[0020] Figure 5A shows a partial plan view of a second shielding layer according to some embodiments of the present disclosure;
[0021] Figure 5B Shown Figure 5A a partial cross-sectional view of the second shielding layer shown;
[0022] Figure 6A shows an isometric bottom view of a signal isolation device electronic package according to some embodiments of the present disclosure;
[0023] Figure 6B Shown Figure 6A An isometric top view of the signal isolator electronic package is shown;
[0024] Figure 6C shows a simplified cross-sectional view, and Figure 6D An isometric partially transparent view is shown.
[0025] Figure 7 A simplified partially transparent isometric view of another embodiment of a signal isolation device 700 according to an embodiment of the present disclosure is shown.
[0026] Figure 8 A simplified cross-section of a relay device according to an embodiment of the present disclosure is shown.
[0027] Figure 9 A simplified schematic diagram of a multi-channel relay device according to an embodiment of the present disclosure is shown.
[0028] Figure 10 Shown is a simplified partially transparent isometric view of another embodiment of a relay device 1000 according to an embodiment of the present disclosure. DETAILED DESCRIPTION
[0029] In the following description, various embodiments will be described. For the purpose of explanation, specific configurations and details are set forth to provide a thorough understanding of the embodiments. However, it will also be apparent to those skilled in the art that these embodiments can be practiced without these specific details. In addition, in order not to obscure the described embodiments, well-known features may be omitted or simplified.
[0030] Electronic devices often need to transmit signals between two circuits while maintaining electrical isolation between the two circuits. For example, electrical isolation between two circuits can be used for safety, reliability, level shifting, and / or multiplexing. The technology disclosed herein generally relates to signal isolators that provide isolation between two circuits while providing a high coupling coefficient in a compact package that can accommodate relatively high voltages. Various invention embodiments are described herein, including methods, processes, systems, devices, and the like.
[0031] In one example, a signal isolator forms part of a solid-state relay device that electrically isolates a control circuit from a controlled circuit. In some examples, the isolation between the two circuits may be for safety (e.g., isolating a control circuit at a human-machine interface from a power circuit that may have a high voltage that is harmful to humans), while in other examples, isolation may be for level conversion (e.g., a control signal is in one voltage domain (e.g., 3 volts) and a controlled signal is in another domain (e.g., 1000 volts)). In another example, multiple signals can be coupled through a single common electrical connection (e.g., a multiplexed input / output connection in an automatic test equipment device), and corresponding multiple signal isolators can be used to select a signal coupled to the common electrical connection at a time. In yet another example, a signal isolator can be used to complete a remote connection between a power source and a load (e.g., coupling a car's starter motor to a battery using a remote switch installed in the passenger compartment) without the need for current and / or voltage coupled to the power source of the switch. In some examples, a signal isolator can be used to filter out harmful or undesirable noise so that noise is not coupled from one circuit to other circuits. The signal isolators disclosed herein may use capacitive, inductive, radiative, optical, acoustic, mechanical, or other suitable coupling methods.
[0032] In one embodiment, a signal isolator includes a transmitter die attached to a receiver die. The transmitter die includes input terminals that transmit signals to a transmitter coil formed on the receiver die. The receiver coil is formed adjacent to the transmitter coil and is electrically isolated from and electromagnetically coupled to the transmitter coil such that signals within the transmitter coil are transmitted to the receiver coil. The receiver die includes rectification, voltage amplification, and driver circuitry that uses the signal from the receiver coil to operate a solid-state switch. In some embodiments, an electronic package includes the transmitter die, the receiver die, and the solid-state switch.
[0033] Several exemplary embodiments will now be described with respect to the accompanying drawings that form part thereof. The subsequent description provides only embodiments and is not intended to limit the scope, applicability or configuration of the present disclosure. On the contrary, the subsequent description of the embodiments will provide a feasible description for implementing one or more embodiments to those skilled in the art. It should be understood that various changes can be made in the function and arrangement of elements without departing from the spirit and scope of the present disclosure. In the following description, for illustrative purposes, specific details are set forth in order to provide a thorough understanding of certain invention embodiments. However, it is apparent that various embodiments can be practiced without these specific details. The drawings and description are not intended to be restrictive. The word "example" or "exemplary" is used herein to mean "used as an example, instance or illustration." Any embodiment or design described herein as "exemplary" or "example" is not necessarily to be construed as being preferred or advantageous over other embodiments or designs.
[0034] Signal isolator
[0035] Figure 1A Depicted are illustrative drawings of a signal isolator according to some embodiments of the present disclosure. Figure 1A As shown, signal isolation device 100 includes a transmitter die 120 attached to a receiver die 140. Transmitter die 120 has an input terminal 105 that receives an input signal and couples the input signal through the transmitter die to a transmitter output terminal 125. Transmitter output terminal 125 transmits the output signal to a receiver input terminal 135 of receiver die 140. Receiver die 140 generates a corresponding receiver output signal at output terminal 110 while maintaining electrical isolation between input terminal 105 and output terminal 110, as described in more detail below.
[0036] One or more interconnects, such as wire bonds 130, can couple the transmitter output terminal 125 to a receiver input terminal 135 disposed on a receiver die 140. The receiver die 140 couples the signal from the receiver input terminal 135 to a coupler 115 formed on the receiver die. The coupler 115 can employ an inductive, capacitive, or other suitable structure to generate an output signal corresponding to the input signal. In one example, the coupler 115 employs inductive coupling to a receiving coil (not shown). Figure 1A 105). More specifically, when the transmitter output signal is received by the transmitter coil, a corresponding signal is generated in the receiver coil and transmitted to the output terminal 110. The transmitter coil can be electrically isolated from the receiver coil so that noise or other harmful or undesirable signals are not coupled from the input terminal 105 to the output terminal 110.
[0037] Figure 1B Depicts Figure 1A FIG. 1 is a simplified cross-sectional view of the signal isolation device 100 shown in FIG. Figure 1B As shown, coupler 115 has been vertically expanded to more clearly illustrate exemplary features of this particular embodiment. Transmitter die 120 can be any suitable type of semiconductor device, including but not limited to silicon, and can include transmit circuitry 205 that can perform filtering, amplification, processing, conditioning, and / or other suitable functions on one or more input signals, as explained in greater detail below. Transmitter die 120 can be mechanically and thermally coupled to receiver die 140 via an electrically insulating, electrically conductive, and / or thermally conductive bonding layer 210.
[0038] Receive die 140 may be any suitable type of semiconductor device, including but not limited to silicon, gallium nitride, gallium arsenide, silicon carbide, silicon germanium, diamond, or other suitable materials, and may include receive circuitry 215 that may perform filtering, amplification, processing, conditioning, rectification, and / or other suitable functions on a received signal, as explained in more detail below.
[0039] Coupler 115 is attached to receive die 140 and may include multiple conductive layers, which may be referred to as "redistribution layers" (RDLs), each separated by one or more dielectric layers 220 (e.g., polyimide). Shielding layer 225 is positioned above receive circuitry 215 and shields the receive circuitry from electromagnetic energy emitted from areas above the shielding layer. In some embodiments, shielding layer 225 may be a continuous or semi-continuous metal layer electrically coupled to ground potential, while in other embodiments, the shielding layer may include two, three, four, or more metal layers, some examples of which are described in more detail below.
[0040] The receive coil layer 230 is positioned above the shielding layer 225. The receive coil layer 230 may include one or more receive coils 235 of a spiral or other suitable geometry, arranged to receive signals inductively coupled from one or more corresponding transmit coils 240 formed in the transmit coil layer 245. The transmit coils 240 are one or more spirals or other suitable geometric coils that receive signals from the transmit die 120 via the transmitter output terminal 125, the electrical conductor 130, and the receiver input terminal 135. In some embodiments, the width of each conductor forming the receive coil 235 and the transmit coil 240 is 5 to 40 microns, 10 to 25 microns, or 12 to 20 microns. In some embodiments, the height of each conductor forming the receive coil 235 and the transmit coil 240 is 1 to 40 microns, 5 to 20 microns, or 5 to 10 microns. In various embodiments, the conductors forming the receive coil 235 and the transmit coil 240 are made of a conductive metal, such as, but not limited to, copper, gold, silver, palladium, aluminum, or nickel.
[0041] In some embodiments, the distance between the transmit coil 240 and the receive coil 235 can be 0.1 microns to 400 microns, 5 microns to 50 microns, or 10 microns to 15 microns. The distance between the transmit coil 240 and the receive coil 235 can vary for different applications requiring a specific coupling coefficient and a specific level of electrical isolation, as a smaller distance results in a higher coupling coefficient and lower electrical isolation. In some embodiments, high dielectric strength materials such as parylene, polyvinylidene fluoride (PVDF) nanocomposites, polyimide, silicon nitride, calcium titanate (CaTiO3), or other suitable polymers and / or ceramic materials can be used to reduce the distance between the coils for applications requiring an increased coupling coefficient and high electrical isolation. In some embodiments, the coupling coefficient between the transmit coil 240 and the receive coil 235 can be greater than 0.6, greater than 0.7, greater than 0.8, or greater than 0.9. In some embodiments, the distance between the receive coil 235 and the shield 225 is 2 microns to 20 microns, 3 microns to 10 microns, or approximately 4 microns. In some implementations, the distance between shield 225 and receive circuitry 215 is 0.1 microns to 20 microns, 3 microns to 10 microns, or approximately 4 microns.
[0042] In some embodiments, one or more additional shielding layers (not in Figure 1A and 1B240 and the receiver coil 235, respectively, may be formed from one or more metal layers, such as those described in more detail below.
[0043] Vias 250 can electrically couple one or more layers in coupler 115 together and route signals vertically through receiver die 140. Corresponding apertures 255 can be formed in shielding layer 225 to allow vias 250 to pass through the shielding layer while remaining electrically isolated from the one or more shielding layers. For example, vias 250a, 250b can couple signals from receiver input terminal 135 to outer winding 255a of transmit coil 240 and to inner winding 255b of the transmit coil, respectively. Similarly, vias 250c, 250d can couple signals from outer winding 260a of receive coil 235 and inner winding 260b of receive coil, respectively, to receiver circuitry 215. Via 250e can couple signals from receiver circuitry 215 to the top surface of receiver die 140 for coupling to a separate electronic device through output terminal 110.
[0044] Although signal isolation device 100 illustrates one particular arrangement of transmit die, transmit coil, receive coil, receiver die, vias, etc., those skilled in the art will understand that the present disclosure is not limited to this particular arrangement and that other arrangements are within the scope of the present disclosure.
[0045] Figure 1C Shown Figure 1A and 1B FIG. 1 is a simplified block diagram of a signal isolation device 100. Figure 1C As shown, transmitter die 120 includes input terminals 105a, 105b arranged to receive an input signal, which is coupled to a transmitter coil 240 within coupler 115 via transmitter output terminal 125, electrical conductor 130, and receiver input terminal 135. Receive coil 235 within coupler 115 receives a signal corresponding to the input signal and transmits it to receiver circuitry 215, which generates a corresponding output signal at output terminals 110a, 110b. In this particular embodiment, output terminals 110a, 110b are coupled to switch 270, which is in an on (conducting) state when an input signal is received at input terminals 105a, 105b and in an off (non-conducting) state when no input signal is received. Other embodiments of signal isolation device 100 may have different features and functions, some of which are described in more detail below.
[0046] In some embodiments, the transmit die 120 can be arranged to receive any suitable input signal at input terminals 105a, 105b, such as a steady-state logic signal (e.g., 0 volts for an "off" signal and 5 volts for an "on" signal) or a varying input (e.g., 10 kHz for an on signal and 0 kHz for an off signal). Logic circuitry within the transmit die 120 can determine when an on signal is received at input terminals 105a, 105b and can cause a signal generator to generate a time-varying voltage (e.g., a drive signal) that is coupled to the transmit coil 240. In this particular embodiment, the transmit die 120 includes a pulse generator and a rectifier that generates a driver signal that is coupled to the transmit coil 240 via the transmitter output terminal 125, the electrical conductor 130, and the receiver input terminal 135. In some embodiments, the transmit coil 240 can be coupled to a capacitor 263 having a characteristic resonant frequency (e.g., forming an LC circuit). The transmit die 120 can drive the LC circuit at its resonant frequency, while in other embodiments, it can drive the LC circuit below or above the resonant frequency. In some embodiments, the transmit die 120 can drive the LC circuit at varying frequencies; for example, it can drive the LC circuit below resonance for a first period and then at resonance for a second period.
[0047] Within coupler 115, the time-varying electrical signal within transmit coil 240 is electromagnetically coupled to receive coil 235. In some embodiments, ferrite or other material may be positioned between transmit coil 240 and receive coil 235 to improve the coupling coefficient between the two coils. Receive coil 235 may be coupled in series with capacitor 237 (forming an LC resonant circuit) and may generate a signal in transmit coil 240 that corresponds to the drive signal. In some embodiments, the resonant frequencies of the transmit and receive coils may be matched, while in other embodiments, the resonant frequencies may be different. In some embodiments, the number of turns of transmit coil 240 and receive coil 235 may be equal, while in other embodiments, one may have a higher or lower number of turns than the other. The signal generated by receive coil 235 may be used by receiver die 140 to operate one or more switches, generate power, and / or transmit data, as discussed in more detail herein.
[0048] exist Figure 1CIn the illustrated embodiment, the receiver circuitry 215 includes a power converter 260 that can convert the power received from the receiver coil 235 to a higher or lower voltage. In one embodiment, the power converter 260 is a charge pump circuit that increases the voltage and can further include a rectifier that rectifies the time-varying electrical signal received from the receiver coil 235 to produce a DC voltage. In other embodiments, the power converter 260 can include a half-bridge, full-bridge, or other suitable converter architecture that can include any suitable AC-to-DC converter and / or DC-to-DC converter.
[0049] In other embodiments, the power converter 260 may include more than one power output, which may supply different voltages to one or more auxiliary circuits. In some embodiments, the power converter 260 may include two or more DC-to-DC converters that generate any suitable voltage for the one or more auxiliary outputs. In other embodiments, the power converter 260 may include a low dropout regulator (LDO), a voltage divider, or other circuitry to generate different "auxiliary" voltages.
[0050] exist Figure 1C In the illustrated embodiment, the power converter 260 can rectify and boost the voltage of the signal received from the receiver coil 235 and transmit the rectified and boosted voltage signal to the driver circuit 265. When the transmit die 120 detects an "on" signal, the driver circuit 265 can supply a drive signal to the switch 270. The driver circuit 265 can include one or more pull-down and / or pull-up transistors to latch the switch 270 in the on state or the off state and provide the necessary voltage and current to the switch 270.
[0051] exist Figure 1C In the illustrated embodiment, switches 270 are arranged as two switches connected back-to-back in a bidirectional configuration, with both gates of the two switches being operated simultaneously by driver circuit 265. However, in other embodiments, the switches can be a single integrated switch pair or other suitable arrangement, such as a single MOSFET, HEMT, IGBT, or other type of switch. When switch 270 is in the on state, first relay terminal 275a is electrically coupled to second relay terminal 275b, and when switch 270 is in the off state, the first relay terminal is isolated from the second relay terminal. In some embodiments, multiple switches, such as two, three, four, or more (bidirectional or other types), can be operated by driver circuit 265 and / or switch 270.
[0052] In another embodiment, receiving circuitry 215 may include data communication circuitry (not shown). Figure 1C ), the data communication circuitry can be coupled to the receive coil 235 and can be configured to demodulate the data signal from the receive coil. For example, in one embodiment, the transmit die 120 can include data modulation circuitry that couples data to the transmit coil 240, such that the transmit coil can couple a power signal (e.g., at 100 MHz) and a data signal (e.g., operating at 10 kHz) to the receive coil 235, such that both power and data can be transmitted simultaneously through the coupler 115.
[0053] In other embodiments, signal isolator device 100 can operate bidirectionally as a power and / or data communication system. More specifically, in one embodiment, power and / or data can be transferred from transmit coil 240 to receive coil 235, and vice versa, with power and / or data being transferred from receive coil 235 to transmit coil 240. For example, data can be transferred from receive coil 235 to transmit coil 240 while power is transferred from transmit coil 240 to receive coil 235 via receiver circuitry 215, which changes the effective impedance of receive coil 235, which can be sensed by circuitry coupled to transmit coil 240 and received as data at transmit die 120. In some embodiments where signal isolator device 100 is bidirectional, power converter 260 can include a bidirectional DC-to-DC converter so that the signal or power received from output terminals 110a, 110b can have its voltage level changed and / or inverted into an AC signal to transfer data and / or power to transmit die 120 and / or input terminals 105a, 105b. Thus, in some embodiments, power transfer may be unidirectional in either direction while data transfer is bidirectional, in still further embodiments, both power and data may be bidirectional, and in still further embodiments, data transfer may be unidirectional while power transfer is bidirectional.
[0054] In some embodiments, the signal isolation device 100 may include a power storage device (e.g., co-packaged) and / or may be arranged to control the power storage device (e.g., a separate electronic device). In various embodiments, the power storage device may be a capacitor co-packaged with the signal isolation device circuitry within a common electronic package, and the signal isolation device includes control circuitry configured to charge the power storage device during a charging cycle. In some embodiments, the charging cycle may be performed at a relatively low drive frequency to reduce EMI generation. After or during charging of the power storage device, a data signal may be transmitted by the transmitting die 120 to the receiving die 140 to turn on the switch 270. The driver circuit 265 may use the power stored in the power storage device to turn on the switch 270. Using the power storage device may increase the operating rate of the switch 270 because the power to operate the switch can be immediately obtained from the power storage device and does not have to be transmitted across the coupler 115. In other embodiments, power from both the coupler 115 and the power storage device may be used to turn on the switch 270.
[0055] In some embodiments, the receiver circuit 215 can be formed on a monolithic receiver die 140 and can include a power converter 260 and a driver circuit 265, with the switch 270 formed on a separate die, while in other embodiments, the switch 270 can be formed monolithically on the receiver die. In various embodiments, one or more components of the receiver circuit system 215 can be co-packaged with the receiver die 140 and / or can be located on a circuit board adjacent to the signal isolation device 100. In some embodiments, the receiver die 140 can be formed of silicon, silicon carbide, gallium arsenide, gallium nitride, diamond, or any other suitable semiconductor material. In some embodiments, the transmitter die 120 can be formed of silicon, silicon carbide, gallium arsenide, gallium nitride, diamond, or any other suitable semiconductor material. In some embodiments, the switch 270 can be formed of silicon, silicon carbide, gallium arsenide, gallium nitride, diamond, or any other suitable semiconductor material.
[0056] Figure 2 Demonstrated that it can be used Figure 1A and 1B FIG. 2 is a simplified plan view of the shield 225 of the signal isolation device 100. Figure 2 As shown, the shield 225 includes metal conductors arranged in what may be referred to as a herringbone pattern with relatively small gaps between each conductor. In some embodiments, the width of each conductor may be 20-40 microns, and the gaps between each conductor may be 2-10 microns. Such an arrangement may be advantageous in reducing and / or eliminating the formation of eddy currents to improve shielding of the receiving circuit system 215 (see FIG. Figure 1B) is effective against electromagnetic noise generated by the transmit coil 240 and / or receive coil 235, respectively. The shield 225 may be formed of any suitable conductive metal, such as, but not limited to, copper, gold, silver, palladium, aluminum, titanium, or nickel.
[0057] The shield 225 may include one or more apertures 255 that allow the through-hole 250 (see Figure 1B ) can pass through the layer. In some embodiments, the shield 225 can have a different configuration and / or can include more than one layer, as described in more detail below.
[0058] Figure 3 A simplified partial cross-sectional view of a portion of a signal isolation device 300 is shown. Figure 3 As shown, the signal isolation device 300 can be similar to Figure 1A and 1B The signal isolation device 100 shown in FIG. 3 is a signal isolation device 300. Figure 1B and 2 In addition to the first shielding layer 225 shown in FIG, a second shielding layer 305 can be used. Signal isolation device 300 includes a transmitter coil 310 separated from a receiver coil 315 by a dielectric layer 320. One or more vias 325 provide electrical interconnection between the one or more layers. In some embodiments, second shielding layer 305 can be a continuous or semi-continuous metal layer made of a conductive metal such as, but not limited to, copper, gold, silver, palladium, aluminum, or nickel. In some embodiments, second shielding layer 305 can include one, two, three, four, or more layers, some of which are described in more detail below. In other embodiments, the vertical order of first shielding layer 225 and second shielding layer 305 can be reversed.
[0059] Figure 4A A partial plan view of the second shielding layer 305 is shown, and Figure 4B A partial cross-sectional view is shown. Figure 4A and 4B As shown, the second shielding layer 305 may include a first layer 405 and a second layer 415, wherein the first layer has first conductors 410 connected in parallel in series with a gap therebetween, and the second layer has second conductors 420 connected in parallel in series with a gap therebetween. The first conductors 410 may be arranged parallel to the second conductors 420, wherein the first conductors are offset from the second conductors such that the first conductors cover the gaps between the second conductors and the second conductors cover the gaps between the first conductors. This arrangement may prevent the electric field extending through the first gaps from penetrating the second shielding layer by blocking the field of the first gaps. One or more dielectric layers (not in the Figure 4A 、 4B) can be positioned between the first layer 405 and the second layer 415. In some embodiments, the shielding layer 305 can be used alone (e.g., as a first shielding layer), while in other embodiments, the shielding layer can be used in combination with one or more other shielding layers. The second shielding layer 305 can be a continuous or semi-continuous metal layer made of a conductive metal such as, but not limited to, copper, gold, silver, palladium, aluminum, or nickel. In some embodiments, Figure 4A and 4B The width of each conductor may be increased or decreased by an appropriate amount compared to the proportions shown.
[0060] Figure 5A A partial plan view of another embodiment of the second shielding layer 305 is shown, and Figure 5B A partial cross-sectional view is shown. Figure 5A and 5B As shown, the second shielding layer 305 may include a first layer 505 and a second layer 515, wherein the first layer has first conductors 510 connected in parallel and in series with a gap therebetween, and the second layer has second conductors 520 connected in parallel and in series with a gap therebetween. The first conductors 510 may be arranged perpendicular to the second conductors 520. One or more dielectric layers (not shown) may be provided. Figure 5A 、 5B ) can be positioned between the first layer 505 and the second layer 515. In some embodiments, the second shielding layer 305 can be used alone (e.g., as a first shielding layer), while in other embodiments, the second shielding layer can be used in combination with one or more other shielding layers. The second shielding layer 305 can be a continuous or semi-continuous metal layer made of a conductive metal such as, but not limited to, copper, gold, silver, palladium, aluminum, or nickel. In some embodiments, Figure 5A and 5B The width of each conductor may be increased or decreased by an appropriate amount compared to the proportions shown.
[0061] The above about Figures 1A-5B The various shield layer configurations described can be used alone or in combination with each other so that the signal isolation device includes one, two, three, four, or more shield layers. In addition, the shield layers can be arranged in any suitable vertical order, and the reuse of one or more shield layer configurations is within the scope of the present disclosure.
[0062] Figure 6A An isometric bottom view of a signal isolator electronic package 600 according to an embodiment of the present disclosure is shown, which may enclose a signal isolator electronic package as described above with reference to FIG. Figure 1A and 1B Signal isolating device as described. Figure 6B shows an isometric top view of an electronic package 600, Figure 6Cshows a simplified cross-sectional view, and Figure 6D An isometric partially transparent view is shown. Electronic package 600 may be referred to as a dual flat no-lead (DFN) package, but the present disclosure is not limited to this configuration, and other types of suitable packages, such as quad flat no-lead (QFN), small outline (SO), multi-chip module, chip scale package (CSP), etc., are also within the scope of the present disclosure. For example, a QFN package may be used to package two, three, four, or more signal isolation devices 100 in a single electronic package.
[0063] like Figure 6A and 6B As shown, the electronic package 600 may include a housing surrounding a transmitter die and a receiver die (not shown). Figure 6A and 6B The electronic package may include one or more external terminals 610 that can be coupled to a circuit board or other electronic structure and couple input and output signals to the transmit and receive dies within the electronic package.
[0064] like Figure 6C As shown, external terminals 610 can be formed from a metal layer 615, which can be a leadframe or other structure. Receiver die 140 is attached to center terminal 610e, input terminal 105 on transmitter die 120 is electrically coupled to external input terminals 610a-610d, and output terminal 110 on receiver die 140 is electrically coupled to external output terminals 610f-610i. Electrical coupling within electronic package 600 can be accomplished via wirebonds, flip-chip interconnects, or other suitable interconnect structures.
[0065] like Figure 6DAs shown, the transmit coil 240 and receive coil 235 are each arranged across a large portion of the receiver die 140 to maximize mutual inductance. In various embodiments, the area of the receiver die 140 is approximately 1 square millimeter, and the coils are distributed across more than 60%, more than 70%, more than 80%, or between 90% and 100% of the area. In some embodiments, one or more active and / or passive electronic components (e.g., resistors, capacitors, inductors, diodes, transistors, etc.) may be integrated within the package 600. For example, circuitry may be implemented to convert received signals into DC power for powering other circuitry on the receiver die and / or external components outside the package. As another example, circuitry may be implemented to allow signals to be coupled from the receiver chip back to the transmitter chip to facilitate bidirectional data and / or power transfer. In yet another example, matching components (e.g., capacitors and / or resistors to improve insertion loss and / or return loss), filtering, and / or decoupling capacitors may be coupled to the input and / or output terminals to improve device and / or system performance.
[0066] In some embodiments, the electronic package 600 can have one or more integral heat sinks formed of a thermally conductive material and arranged to transfer thermal energy away from the receive die 140 and / or transmit die 120. In some embodiments where the package 600 transfers relatively large amounts of power from the input terminals to the receive terminals, the heat sinks can be used to remove heat from the die and transfer it to a circuit board to which the package 600 is attached and / or to an external heat sink that can be attached to the top surface of the electronic package.
[0067] Figure 7 A simplified partially transparent isometric view of another embodiment of a signal isolation device 700 according to an embodiment of the present disclosure is shown. The signal isolation device 700 may be or may include any of the components, features, or characteristics of any of the previously described signal isolation devices. Figure 7 As shown, the signal isolation device 700 can be a chip scale package in which a transmitter die 705 is attached to a receiver die 710. Input terminals 715a, 715b, which can be solder balls, couple the input signal to the transmitter die 705. The input signal is connected to the receiver die 710 through corresponding vias 717a, 717b (717b is not shown). Figure 7 ), through corresponding chip-to-chip interconnects 720a, 720b (which are shown in Figure 7 The CMOS (shown as wire bonds in FIG, but in other embodiments may be flip chip interconnects or other suitable interconnects) propagates and enters the transmitting die 705.
[0068] The transmit die 705 may perform any of the operations described above on the input signal, including converting it into an intermediate signal having a time-varying voltage. The intermediate signal may be transmitted via the chip-to-chip interconnects 720c, 720d (which are in FIG. Figure 7 Wire bonds are shown in FIG, but in other embodiments may be flip-chip interconnects or other suitable interconnects) are coupled to the receiver die 710. The receiver die 710 conducts the signal to the coupler 730, which may include one or more redistribution layers that couple the intermediate signal from the transmit coil to the isolated receive coil, such as those described in more detail above. The receiver die 710 is electrically coupled to the receiver die 710 via respective vias 717c, 717d (717d is not shown). Figure 7 ) conducts the signal from the receiving coil to the output terminals 715c, 715d (715d is not shown) Figure 7 ). In some embodiments, the transmit die 705 can include one or more shielding layers, and / or the receiver die 710 can include one or more additional shielding layers above or below the transmit and receive coils to shield the receiver circuitry from electromagnetic fields generated by the transmit and receive coils, some of which are described in more detail above.
[0069] Terminals 715 may be or include solder balls, copper pillars, posts, or any other suitable type of interconnect. An electrically insulating encapsulant 725 may fully or partially encapsulate the transmitter die 705 and / or the receiver die 710. The chip-scale packaging arrangement may enable the signal isolation device 700 to be smaller than Figures 6A-6D The electronic package shown can be configured to enable integration of circuitry above and below the transmit / receive coils. In some embodiments, the active circuitry of the receiver die 710 is formed on the bottom surface 713 of the receiver die, which provides increased electrical isolation between the transmit / receive coils and the active receiver circuitry, while in other embodiments, the active receiver circuitry can be formed on the top surface. In further embodiments, the active circuitry of the transmit die 705 can be formed on the top surface (e.g., Figure 7 ), which may provide increased isolation between the active transmit circuitry and the transmit / receive coils, however in other embodiments the active circuitry may be formed on the bottom surface.
[0070] Solid-state relay device
[0071] Figure 8 1 shows a simplified cross-section of a relay device according to an embodiment of the present disclosure. Figure 8 As shown, the relay device 800 may include a signal isolation device 803, which may be similar to Figures 1A-5BThe signal isolation device 100 shown in FIG. 1 is illustrated, however, the relay device further includes one or more switches 804 that operate in response to an input signal. The relay device 800 may be or may include any of the components, features, or characteristics of any of the previously described signal isolation devices, and the relay device may be included in any of the previously discussed signal isolation devices. In one embodiment, the relay device 800 may include two back-to-back transistors (e.g., two transistors with their source terminals connected together) that operate as a bidirectional switch 804. The transistors turn on in response to an input signal and turn off in the absence of an input signal, thereby operating as a solid-state relay. In some embodiments, the switch 804 is comprised of two back-to-back gallium nitride field-effect transistors (GaN FETs), and the signal isolation device 803 generates sufficient current (e.g., greater than 100 microamperes) to operate the GaN FETs. In other embodiments, a single GaN FET may be used in place of the bidirectional switch 804.
[0072] like Figure 8 As shown, relay device 800 includes one or more input terminals 805 for receiving one or more input signals, one or more output terminals 810 for transmitting one or more corresponding output signals to switch 804, and a coupler 815 for coupling the one or more input signals to the one or more output terminals, as described in more detail above. In this particular embodiment, signal isolation device 803 includes a transmitting die 820, which includes one or more input terminals 805. Transmitting die 820 couples the input signals to transmitter output terminals 825 and can perform filtering, amplification, processing, conditioning, or other suitable functions on the one or more input signals.
[0073] One or more interconnects, such as wire bonds 830, can couple the first transmitter output terminal 825 to a receiver input terminal 835 disposed on a receiver die 840. The receiver die 840 couples the signal from the receiver input terminal 835 to a coupler 815 formed on the receiver die. The coupler 815 can employ an inductive, capacitive, or other suitable structure to generate one or more output signals corresponding to the one or more input signals. In one example, the coupler 815 employs inductive coupling to a receiving coil (not in FIG. Figure 8 ). More specifically, when the transmit coil receives an input signal, a corresponding signal is generated in the receive coil and transmitted to the one or more output terminals 810. The transmit coil can be electrically isolated from the receive coil so that noise or other harmful or undesirable signals are not coupled from the one or more input terminals 805 to the one or more output terminals 810.
[0074] One or more output terminals 810 can be coupled to the switch 804 via an interconnect (e.g., a wire bond 830, which can be connected to a gate terminal 845 of the switch 804). Thus, when the input terminal 805 receives a sufficient input signal, the output terminal 810 conducts current to the gate terminal 845 to transition the switch 804 from an off state to an on state. When the switch is in the on state, the corresponding relay terminals 850a, 850b are coupled together, and when the transistor is in the off state, the corresponding relay terminals are decoupled. The relay terminals 850a, 850b can be connected to external relay terminals on the exterior of the package 875.
[0075] In some embodiments, switch 804 can withstand relatively high voltage, as greater than 100 volts, greater than 150 volts, greater than 200 volts, greater than 500 volts, greater than 800 volts or greater than 1000 volts.In various embodiments, switch 804 can be made up of one or more transistors, and described one or more transistors are formed by silicon, silicon carbide, gallium arsenide, gallium nitride, diamond or any other suitable semiconductor material.In some embodiments, switch 804 can comprise a single transistor as unidirectional switch operation, two or more switches as bidirectional switch operation or three or more switches with T switch configuration operation.T switch configuration can be used for minimizing leakage current at test terminal place, and can comprise three solid-state relays or " switch " arranged with " T " shape to minimize leakage current between the output and the test signal input to test device.In other embodiments, switch 804 can comprise one or more electrically isolated unidirectional, bidirectional and / or T switch circuits.
[0076] exist Figure 8In the illustrated embodiment, the transmitter die 820, the receiver die 840, and the switch 804 device are housed within an electronic package comprising a substrate 880 overmolded with a dielectric mold compound 885, and may be referred to as a multi-chip module. However, other suitable types of electronic packages may be used, such as a very thin small outline no-lead package (VSON), a dual flat no-lead (DFN), a quad flat no-lead (QFN), a small outline (SO), or a chip scale package (CSP), and are within the scope of the present disclosure. Additionally, multiple signal isolation devices / transistor devices may be included in a single electronic package, for example, a QFN package may be used to package two, three, four, or more signal isolation devices / transistor devices in a single electronic package. In various embodiments, one or more active electronic components and / or passive electronic components (e.g., resistors, capacitors, inductors, diodes, transistors, etc.) may be integrated within the package 875. For example, matching components (e.g., capacitors and / or inductors and / or resistors for improving insertion loss and / or return loss), filtering and / or decoupling capacitors can be coupled to the input terminals and / or output terminals to improve the performance of the device and / or system. In another example, a transistor driver circuit can be integrated within the package 875 to provide a robust, noise-immune, and reliable drive signal for the switch 804.
[0077] Figure 9 1 shows a simplified schematic diagram of a multi-channel relay device according to an embodiment of the present disclosure. Figure 9 As shown, the multi-channel relay device 900 can be similar to Figure 8 Unlike relay device 800 shown, relay device 900 has a first output channel 905 and a second output channel 910 driven by a common input 915 and are electrically isolated, as described in more detail below.
[0078] In some embodiments, the multi-channel relay device 900 can be constructed similarly to the relay device 800, except that the coupler disposed on the receiver die includes a first receiving coil 920 and a second receiving coil 925, each inductively coupled to a single transmitting coil 930. Thus, when the transmitting coil 930 is energized, it induces a signal in both the first receiving coil 920 and the second receiving coil 925, which are coupled to a first transistor 935 and a second transistor 940, respectively. In this embodiment, each of the first transistor 935 and the second transistor 940 is shown as two back-to-back transistors, however, in other embodiments, they can be a single transistor or other suitable device. In other embodiments, the coupler region of any of the embodiments described herein can be replaced with an optocoupler device, a capacitive coupling device, or other suitable coupler.
[0079] Figure 10 A simplified partially transparent isometric view of another embodiment of a relay device 1000 according to an embodiment of the present disclosure is shown. The relay device 1000 may be or may include any of the components, features, or characteristics of any of the previously described signal isolation devices or relays. Figure 10 As shown, relay device 1000 can be a chip-scale package in which a transmitter die 1005 is attached to a receiver die 1010, and the receiver die is attached to a switch die 1012. Input terminals 1015a, 1015b, which can be solder balls, couple input signals to transmitter die 1005. The input signals pass through corresponding vias 1017a, 1017b (1017b is not shown) disposed in switch die 1012. Figure 10 ), through corresponding chip-to-chip interconnects 1020a, 1020b (which are shown in Figure 10 1005. The CMOS process (shown as wire bonds in FIG, but in other embodiments may be flip chip interconnects or other suitable interconnects) propagates and enters the transmitting die 1005.
[0080] The transmit die 1005 can perform any of the operations described above on the input signal, including converting it into an intermediate signal having a time-varying voltage. The intermediate signal can be transmitted via the chip-to-chip interconnects 1020c, 1020d (which are in the Figure 10 1014. The receiver die 1010 is coupled to the receiver die 1010 by wire bonds (shown as wire bonds in FIG, but in other embodiments may be flip chip interconnects or other suitable interconnects). The receiver die 1010 conducts the signal to a coupler 1030, which may include one or more redistribution layers that couple the intermediate signal from the transmit coil to the isolated receive coil, such as those described in more detail above. The receiver die 1010 conducts the signal from the receive coil to a switch die 1012 that includes one or more solid-state switches. In some embodiments, the one or more solid-state switches are located on the bottom surface 1013 of the switch die, and thus the vias 1017c, 1017d (1017d is not located on the bottom surface of the switch die) are connected to the receiver die 1010. Figure 10 In response to receiving an input signal at input terminals 1015a, 1015b, one or more switches can be operated to output a signal at output terminals 1015c, 1015d (1015d is not in operation). Figure 1010). In some embodiments, the switch die 1012 can include a redistribution and / or shielding layer 1035 that can provide signal routing and / or signal shielding capabilities. In further embodiments, one or more switch driver circuits for operating one or more solid-state switches can also be formed on the bottom surface 1013, while in other embodiments, the switch driver circuits can be formed on the receiver die 1010. In some embodiments, the transmit die 1005 can include one or more shielding layers, and / or the receiver die 1010 can include one or more additional shielding layers above or below the transmit receive coils (in the coupler 1030) to shield the receiver circuitry from electromagnetic fields generated by the transmit and receive coils, some of which are described in more detail above.
[0081] Terminals 1015 may be or include solder balls, copper pillars, posts, or any other suitable type of interconnect. An electrically insulating encapsulant 1025 may fully or partially encapsulate the transmitter die 1005, the receiver die 1010, and / or the switch die 1012. The chip-scale packaging arrangement may enable the relay device 1000 to be smaller than Figure 8 The electronic package shown can be configured to enable integration of circuitry above and below the transmit / receive coils. In some embodiments, the active circuitry of the receiver die 1010 is formed on the bottom surface of the receiver die, which provides increased electrical isolation between the transmit / receive coils and the active receiver circuitry, while in other embodiments, the active receiver circuitry can be formed on the top surface. In further embodiments, the active circuitry of the transmit die 1005 can be formed on the top surface (e.g., Figure 10 ), which may provide increased isolation between the active transmit circuitry and the transmit / receive coils, however in other embodiments the active circuitry may be formed on the bottom surface.
[0082] In the foregoing description, embodiments of the present disclosure have been described with reference to numerous specific details, which may vary depending on the specific implementation. Therefore, the description and drawings should be regarded as illustrative rather than restrictive. The sole and exclusive indication of the scope of the present disclosure, and what the applicants intend as the scope of the present disclosure, is the literal and equivalent scope of the claims published in this application, in the specific form in which those claims are published, including any subsequent revisions. The specific details of specific embodiments may be combined in any suitable manner without departing from the spirit and scope of the embodiments of the present disclosure.
[0083] In addition, spatial relative terms, such as "bottom" or "top", etc., can be used to describe the relationship of one element and / or feature to another element and / or feature, for example, as shown in the figures. It should be understood that spatial relative terms are intended to cover different orientations of the device in use and / or operation in addition to the orientation depicted in the figures. For example, if the device in the figure is turned over, the element described as the "bottom" surface can then be oriented "above" other elements or features. The device can be oriented in other ways (e.g., rotated 90 degrees or in other orientations) and the spatial relative descriptors used herein can be interpreted accordingly.
[0084] As used herein, the terms "and", "or" and "and / or" may include multiple meanings, which are also expected to depend at least in part on the context in which the terms are used. Generally, "or", if used in an associative list (such as A, B or C), is intended to mean A, B and C (used herein in an inclusive sense) as well as A, B or C (used herein in an exclusive sense). In addition, the term "one or more" as used herein may be used to describe any feature, structure or characteristic in the singular, or may be used to describe some combination of features, structures or characteristics. However, it should be noted that this is merely an illustrative example and the claimed subject matter is not limited to this example. In addition, the term "at least one", if used in an associative list (such as A, B or C), may be interpreted to mean any combination of A, B and / or C, such as A, B, C, AB, AC, BC, AA, AAB, ABC, AABBCCC, etc.
[0085] References throughout this specification to "one example," "an example," "some examples," or "example implementations" mean that a particular feature, structure, or characteristic described in connection with a feature and / or example may be included in at least one feature and / or example of the claimed subject matter. Thus, appearances of the phrases "in one example," "an example," "in some examples," "in some implementations," or other similar phrases throughout this specification are not necessarily all referring to the same feature, example, and / or limitation. Furthermore, particular features, structures, or characteristics may be combined into one or more examples and / or features.
[0086] In some embodiments, operations or processing may involve the physical manipulation of physical quantities. Typically, although not necessarily, such quantities may take the form of electrical or magnetic signals that can be stored, transferred, combined, compared, or otherwise manipulated. Mainly for general reasons, it has sometimes been shown that it is convenient to refer to such signals as bits, data, values, elements, symbols, characters, terms, quantities, numbers, etc. However, it should be understood that all of these or similar terms are associated with appropriate physical quantities and are merely convenient labels. Unless otherwise specifically stated, it will be apparent from the discussion herein that throughout the specification, discussions utilizing terms such as "processing," "calculating," "calculating," "determining," etc. refer to the actions or processes of specific devices (such as special-purpose computers, special-purpose computing devices, or similar special-purpose electronic computing devices). Therefore, in the context of this specification, special-purpose computers or similar special-purpose electronic computing devices are capable of manipulating or converting signals, typically represented as physical electrons or magnetic quantities within the memory, registers, or other information storage devices, transmission devices, or display devices of special-purpose computers or similar special-purpose electronic computing devices.
[0087] In the preceding detailed description, numerous specific details have been set forth to provide a thorough understanding of the claimed subject matter. However, those skilled in the art will appreciate that the claimed subject matter may be practiced without these specific details. In other instances, methods and apparatus known to those skilled in the art have not been described in detail in order to avoid obscuring the claimed subject matter. Therefore, it is intended that the claimed subject matter is not limited to the specific examples disclosed, but that such claimed subject matter may also include all aspects falling within the scope of the appended claims and their equivalents.
Claims
1. A solid-state relay device, comprising: a transistor die comprising a transistor having a gate terminal, a source terminal, and a drain terminal; a transmitter die comprising a pair of input terminals coupled to a pair of transmitter output terminals; as well as a receiver die comprising a pair of receiver input terminals, a pair of output terminals, and a coupler region, wherein the transmitter die is attached to a top surface of the receiver die, wherein at least one of the pair of output terminals is attached to the gate terminal, and wherein the coupler region comprises: a transmitting coil connected to the pair of receiver input terminals; a receiver coil positioned proximate to the transmitter coil and connected to the pair of output terminals; receiver circuitry; and A shielding layer is positioned between the receiver circuitry and the receiver coil.
2. The solid-state relay device of claim 1 , wherein the transistor is a first transistor and the source terminal is a first source terminal, and wherein the electronic device further comprises a second transistor having a second source terminal, wherein the first source terminal is connected to the second source terminal. 3 . The solid-state relay device of claim 2 , wherein the second transistor includes a second gate terminal connected to the at least one output terminal of the pair of output terminals. 4 . The solid-state relay device of claim 1 , wherein the transmitter die is attached to a top surface of the receiver die, and wherein the receiver die is attached to a top surface of the transistor die.
5. The solid-state relay device of claim 1 , wherein the receiver coil is a first receiver coil and the pair of output terminals is a pair of first output terminals, wherein the receiver die includes a second receiver coil positioned proximate to the transmitter coil and connected to a pair of second output terminals. 6 . The solid-state relay device of claim 5 , wherein the transistor is a first transistor, and the electronic device includes a second transistor having a second gate terminal coupled to at least one of the pair of second output terminals.
7. The solid-state relay device of claim 6, wherein the first transistor comprises a first bidirectional switch, and wherein the second transistor comprises a second bidirectional switch.
8. The solid-state relay device of claim 5, wherein the first receiver coil is positioned adjacent to a first surface of the transmitter coil, and wherein the second receiver coil is positioned adjacent to a second surface of the transmitter coil, and wherein the first surface is opposite to the second surface.
9. The solid state relay device of claim 1, further comprising an energy storage device coupled to the gate terminal and arranged to apply power to the gate terminal in response to an input signal at the input terminal.
10. The solid state relay device of claim 1, further comprising an encapsulant at least partially encapsulating the transistor die, the transmitter die, and the receiver die.
11. A relay device, comprising: a switch die comprising a solid-state switch having a source, a drain, and a gate; a transmitter die comprising an input coupled to a transmitter output; as well as a receiver die comprising a receiver input, an output, and a coupler region, wherein the receiver input is connected to the transmitter output, wherein the output is coupled to the gate, and wherein the coupler region comprises: a transmitting coil connected to the receiver input; a receiver coil connected to the output; receiver circuitry; and A shield is positioned between the receiver circuitry and the receiver coil.
12. The relay device of claim 11, wherein the solid-state switch is a first solid-state switch and the source is a first source, and wherein the electronic device further comprises a second solid-state switch having a second source, wherein the first source is connected to the second source.
13. The relay device of claim 12, wherein the second solid-state switch includes a second gate coupled to the output.
14. The relay device of claim 11, wherein the transmitter die is attached to a top surface of the receiver die, and wherein the receiver die is attached to a top surface of the switch die.
15. The relay device of claim 11, wherein the receiver coil is a first receiver coil and the output is a first output, wherein the receiver die includes a second receiver coil positioned proximate to the transmitter coil and connected to a second output.
16. The relay device of claim 15, wherein the solid-state switch is a first solid-state switch and the electronic device includes a second solid-state switch having a second gate coupled to the output. 17 . The relay device of claim 16 , wherein the first solid-state switch comprises a first bidirectional switch, and wherein the second solid-state switch comprises a second bidirectional switch.
18. The relay device of claim 15, wherein the first receiver coil is positioned adjacent to a first surface of the transmitter coil, and wherein the second receiver coil is positioned adjacent to a second surface of the transmitter coil, and wherein the first surface is opposite the second surface.
19. The relay device of claim 11, further comprising an energy storage device coupled to the gate and arranged to apply power to the gate in response to an input signal at the input.
20. The solid state relay device of claim 11, further comprising an encapsulant at least partially encapsulating the switch die, the transmitter die, and the receiver die.