Light-emitting device structure based on double-gate regulation and control

Abstract

The invention discloses a light-emitting device structure based on double-gate regulation and control, which relates to the field of photoelectric display and comprises a first gate regulation and control electrode, a first gate insulation layer, a light-emitting unit, a second gate insulation layer and a second gate regulation and control electrode, the light-emitting unit sequentially comprises a first electrode, a hole transport layer, a light-emitting material layer, an electron transport layer and a second electrode; when the device works, the first electrode and the second electrode apply a first power supply to supply power to the light-emitting unit to emit light; the first grid regulation and control electrode applies a first bias power supply relative to the first electrode, the second grid regulation and control electrode applies a second bias power supply relative to the second electrode, and the first bias power supply and the second bias power supply are respectively used for constructing an electric field to regulate and control the mobility of carriers in the light-emitting unit so as to adjust the light-emitting brightness or the light-emitting efficiency of the light-emitting unit. According to the invention, the problem that brightness regulation and efficiency regulation cannot be compatible at the same time in single-grid regulation is overcome, and the two dimensions of light-emitting brightness and light-emitting efficiency are effectively improved.

Description

Technical Field

[0001] The present invention relates to the field of optoelectronic display, and in particular to a light-emitting device structure based on double-gate regulation. Background Art

[0002] As a luminescent material, quantum dots have the advantages of narrow half-width, high color purity, extremely high quantum yield and full spectrum tunability. Therefore, quantum dot light-emitting diodes (QLEDs) have great potential to become a leader in the field of new display devices.

[0003] However, the luminous efficiency or brightness of QLED devices is greatly affected by the carrier recombination process. Different functional layers and quantum dots are usually used to achieve optimal device efficiency. This experimental process requires a lot of time, materials and manpower costs. Summary of the Invention

[0004] In view of the shortcomings of the existing technology, the technical problem to be solved by the present invention is to provide a light-emitting device structure based on dual-gate regulation, aiming to achieve an improvement in luminous efficiency or luminous brightness through gate regulation. It is worth noting that in single-gate regulation, brightness regulation and efficiency regulation are not compatible at the same time. However, the present invention effectively improves both luminous brightness and luminous efficiency through dual-gate regulation.

[0005] To achieve the above objectives, the present invention provides a light-emitting device structure based on dual-gate regulation, characterized in that the device structure includes: a first gate regulation electrode, a first gate insulating layer, a light-emitting unit, a second gate insulating layer, and a first gate regulation electrode; the light-emitting unit includes, in sequence: a first electrode, a hole transport layer, a light-emitting material layer, an electron transport layer, and a second electrode; the first gate insulating layer is disposed between the first gate regulation electrode and the first electrode, and the second gate insulating layer is disposed between the second gate regulation electrode and the second electrode; when the device is in operation, a first power supply is applied to the first electrode and the second electrode, and the first power supply is used to power the light-emitting unit to emit light;

[0006] The first gate control electrode applies a first bias power supply relative to the first electrode, and the second gate control electrode applies a second bias power supply relative to the second electrode. The first bias power supply and the second bias power supply are respectively used to construct an electric field to control the mobility of carriers in the light-emitting unit and adjust the luminous brightness or luminous efficiency of the light-emitting unit.

[0007] In one embodiment, the majority carriers of the light-emitting unit are electron-type carriers;

[0008] The applied potential of the first gate control electrode is configured as follows:

[0009] The first gate control electrode applies an adapted forward potential relative to the first electrode according to the actual device to increase the hole-type carriers injected by the first electrode into the light-emitting material layer so as to improve the luminescence brightness of the light-emitting unit;

[0010] The applied potential of the second gate control electrode is configured as follows:

[0011] The second gate regulating electrode applies an adapted forward potential relative to the second electrode according to the actual device to reduce the electron carriers injected by the second electrode into the light-emitting material layer, thereby improving the light-emitting efficiency of the light-emitting unit.

[0012] In one embodiment, the majority carriers of the light-emitting unit are hole-type carriers;

[0013] The applied potential of the first gate control electrode is configured as follows:

[0014] The first gate control electrode applies an adaptive negative potential relative to the first electrode according to the actual device to reduce the hole-type carriers injected by the first electrode into the light-emitting material layer so as to improve the luminous efficiency of the light-emitting unit;

[0015] The applied potential of the second gate control electrode is configured as follows:

[0016] The second gate control electrode applies an adaptive negative potential relative to the second electrode according to the actual device to increase the electron carriers injected by the second electrode into the light-emitting material layer, so as to improve the luminescence brightness of the light-emitting unit.

[0017] In a specific embodiment, the light-emitting material of the light-emitting material layer is a quantum dot light-emitting material or an organic light-emitting material; when the light-emitting material of the light-emitting material layer is an organic light-emitting material, the light-emitting unit further includes: a hole injection layer and an electron injection layer; the hole injection layer is located between the first electrode and the hole transport layer, and the electron injection layer is located between the second electrode and the electron transport layer.

[0018] In a specific embodiment, the potential of the first electrode corresponding to the hole transport layer is higher than the potential of the second electrode corresponding to the electron transport layer.

[0019] In a specific embodiment, the first bias power supply and the second bias power supply are adjustable voltage power supplies, and the first bias power supply and the second bias power supply are adjustable voltage power supplies that are adjusted according to the luminous brightness or the luminous efficiency requirements.

[0020] In a specific embodiment, a first current-limiting resistor is further connected in series between the first gate control electrode and the first bias power supply circuit, and a second current-limiting resistor is further connected in series between the second gate control electrode and the second bias power supply circuit.

[0021] In a specific embodiment, the first gate control electrode or the second gate control electrode is disposed on the light-emitting side of the device structure and is a transparent electrode.

[0022] It is worth mentioning that transparent electronics can use transparent electrodes such as ITO and AZO, or hollow metal electrodes in the form of grids and meshes.

[0023] In practice, the gate control electrode can be disposed on the light-emitting side or the backlight side of the device structure. Typically, disposing the gate control electrode on the backlight side of the device structure reduces the loss of light transmittance caused by the gate control electrode, thereby improving the brightness of the light. In addition, in practice, the light emission angle can also be perpendicular to the radial direction of the first electrode, the second electrode, and the gate control electrode. The present invention does not actually limit the light emission direction of the device.

[0024] The present invention has the following beneficial effects: Through gate control, the present invention can construct a built-in electric field within the light-emitting device, thereby controlling the luminous efficiency or brightness, thereby improving the luminous efficiency or brightness. Furthermore, the present invention overcomes the problem of single-gate control, where brightness control and efficiency control cannot be simultaneously controlled. Through dual-gate control, the present invention effectively improves both brightness and efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 This is a schematic diagram of a light-emitting device structure based on dual-gate regulation in a specific embodiment of the present invention;

[0026] Figure 2 is a schematic diagram of a light-emitting device structure based on dual-gate regulation in another specific embodiment of the present invention;

[0027] Figure 3 is a schematic diagram of a light-emitting device structure based on dual-gate regulation in another specific embodiment of the present invention;

[0028] Figure 4 This is a schematic diagram of a light-emitting device structure based on dual-gate regulation in another specific embodiment of the present invention. DETAILED DESCRIPTION

[0029] The following describes in detail embodiments of the present invention, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and should not be construed as limiting the present invention.

[0030] In the description of this patent, it should be understood that the terms "center", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the accompanying drawings. They are only for the convenience of describing this patent and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, they should not be understood as limitations on this patent.

[0031] In the description of this patent, it should be noted that, unless otherwise expressly specified or limited, the terms "installed," "connected," "connected," and "set" should be understood in a broad sense. For example, they can refer to fixed connection or set, detachable connection or set, or integral connection or set. Those skilled in the art will understand the specific meanings of the above terms in this patent based on the specific circumstances.

[0032] The embodiment of the present invention provides a light emitting device structure based on dual-gate regulation, such as Figure 1-Figure 4 In the present invention, gate control electrodes are provided on both sides of the existing light-emitting device, and a built-in electric field is created when a potential is applied. This, on the one hand, reduces the injection of majority carriers, thus preventing excess recombination of majority carriers and the resulting decrease in luminous efficiency. Simultaneously, the built-in electric field on the other side also increases the injection of minority carriers, thereby enhancing the brightness of the device.

[0033] Example 1

[0034] like Figure 1-Figure 4 As shown, in an embodiment of the present invention, a light-emitting device structure based on dual-gate regulation includes: a first gate regulation electrode, a first gate insulating layer, a light-emitting unit, a second gate insulating layer, and a first gate regulation electrode; the light-emitting unit includes: a first electrode, a hole transport layer, a light-emitting material layer, an electron transport layer, and a second electrode in sequence; the first gate insulating layer is arranged between the first gate regulation electrode and the first electrode, and the second gate insulating layer is arranged between the second gate regulation electrode and the second electrode; when the device is in operation, a first power supply is applied to the first electrode and the second electrode, and the first power supply is used to power the light-emitting unit to emit light;

[0035] The first gate control electrode applies a first bias power supply relative to the first electrode, and the second gate control electrode applies a second bias power supply relative to the second electrode. The first bias power supply and the second bias power supply are respectively used to construct an electric field to control the mobility of carriers in the light-emitting unit and adjust the luminous brightness or luminous efficiency of the light-emitting unit.

[0036] Example 2

[0037] Based on the first embodiment, in the second embodiment, the majority carriers of the light-emitting unit are electronic carriers;

[0038] The applied potential of the first gate control electrode is configured as follows:

[0039] The first gate control electrode applies an adapted forward potential relative to the first electrode according to the actual device to increase the hole-type carriers injected by the first electrode into the light-emitting material layer so as to improve the luminescence brightness of the light-emitting unit;

[0040] The applied potential of the second gate control electrode is configured as follows:

[0041] The second gate regulating electrode applies an adapted forward potential relative to the second electrode according to the actual device to reduce the electron carriers injected by the second electrode into the light-emitting material layer, thereby improving the light-emitting efficiency of the light-emitting unit.

[0042] The principle of this embodiment is that: the majority carriers of this device are electrons, the first gate control electrode applies a positive potential relative to the first electrode, increases the hole transport layer to inject holes into the quantum dot light-emitting layer, and improves the brightness; at the same time, the second gate control electrode applies a positive potential relative to the second electrode, and reduces the electron transport layer to inject electrons into the quantum dot light-emitting layer, thereby improving the luminescence recombination efficiency.

[0043] Example 3

[0044] Based on the first embodiment, in a third embodiment, the majority carriers of the light-emitting unit are hole-type carriers;

[0045] The applied potential of the first gate control electrode is configured as follows:

[0046] The first gate control electrode applies an adaptive negative potential relative to the first electrode according to the actual device to reduce the hole-type carriers injected by the first electrode into the light-emitting material layer so as to improve the luminous efficiency of the light-emitting unit;

[0047] The applied potential of the second gate control electrode is configured as follows:

[0048] The second gate control electrode applies an adaptive negative potential relative to the second electrode according to the actual device to increase the electron carriers injected by the second electrode into the light-emitting material layer, so as to improve the luminescence brightness of the light-emitting unit.

[0049] The principle of this embodiment is that: the majority carriers of this device are holes, the first gate control electrode applies a negative potential relative to the first electrode, thereby reducing the hole transport layer from injecting holes into the quantum dot light-emitting layer, thereby improving the luminous efficiency; at the same time, the second gate control electrode applies a negative potential relative to the second electrode, thereby increasing the electron transport layer from injecting electrons into the quantum dot light-emitting layer, thereby improving the luminous brightness.

[0050] The luminescent material layer can be selected according to actual conditions. The present invention does not limit the specific material of the luminescent material layer. Typically, quantum dot luminescent materials, OLED organic luminescent materials, and luminescent materials with PN junction composites can all be used as the luminescent material layer of the present invention. Typically, the third embodiment and the fourth embodiment can use quantum dot luminescent materials as the luminescent material layer. And, Figure 3 、 Figure 4 The figure shows a dual-gate controlled light-emitting device structure with an organic light-emitting material as the light-emitting material layer. The light-emitting material of the light-emitting material layer is a quantum dot light-emitting material or an organic light-emitting material. When the light-emitting material of the light-emitting material layer is an organic light-emitting material, the light-emitting unit further includes: a hole injection layer and an electron injection layer; the hole injection layer is located between the first electrode and the hole transport layer, and the electron injection layer is located between the second electrode and the electron transport layer.

[0051] In addition, the potential of the first electrode corresponding to the hole transport layer is higher than the potential of the second electrode corresponding to the electron transport layer.

[0052] Furthermore, the first bias power supply and the second bias power supply are adjustable voltage power supplies, and the first bias power supply and the second bias power supply are adjustable voltage power supplies that are adjusted according to the luminous brightness or the luminous efficiency requirements.

[0053] In various embodiments, a first current-limiting resistor is further connected in series between the first gate control electrode and the first bias power supply loop, and a second current-limiting resistor is further connected in series between the second gate control electrode and the second bias power supply loop.

[0054] Typically, the first gate control electrode or the second gate control electrode is arranged on the light-emitting side of the device structure and is a transparent electrode.

[0055] It is worth mentioning that transparent electronics can use transparent electrodes such as ITO and AZO, or hollow metal electrodes in the form of grids and meshes.

[0056] In practice, the gate control electrode can be disposed on the light-emitting side or the backlight side of the device structure. Typically, disposing the gate control electrode on the backlight side of the device structure reduces the loss of light transmittance caused by the gate control electrode, thereby improving the brightness of the light. In addition, in practice, the light emission angle can also be perpendicular to the radial direction of the first electrode, the second electrode, and the gate control electrode. The present invention does not actually limit the light emission direction of the device.

[0057] The above describes in detail the preferred embodiments of the present invention. It should be understood that those skilled in the art can make numerous modifications and variations based on the concepts of the present invention without inventive effort. Therefore, any technical solutions that can be derived by those skilled in the art through logical analysis, reasoning, or limited experimentation based on the concepts of the present invention and the prior art should be within the scope of protection defined by the claims.

Claims

1. A light-emitting device structure based on dual-gate regulation, characterized in that: The device structure includes: a first gate control electrode, a first gate insulating layer, a light-emitting unit, a second gate insulating layer, and a first gate control electrode; the light-emitting unit includes: a first electrode, a hole transport layer, a light-emitting material layer, an electron transport layer, and a second electrode in sequence; the first gate insulating layer is arranged between the first gate control electrode and the first electrode, and the second gate insulating layer is arranged between the second gate control electrode and the second electrode; when the device is in operation, a first power supply is applied to the first electrode and the second electrode, and the first power supply is used to power the light-emitting unit to emit light; The first gate control electrode applies a first bias power supply relative to the first electrode, and the second gate control electrode applies a second bias power supply relative to the second electrode. The first bias power supply and the second bias power supply are respectively used to construct an electric field to control the mobility of carriers in the light-emitting unit and adjust the luminous brightness or luminous efficiency of the light-emitting unit.

2. A light-emitting device structure based on dual-gate regulation according to claim 1, characterized in that: The majority carriers of the light-emitting unit are electronic carriers; The applied potential of the first gate control electrode is configured as follows: The first gate control electrode applies an adapted forward potential relative to the first electrode according to the actual device to increase the hole-type carriers injected by the first electrode into the light-emitting material layer so as to improve the luminescence brightness of the light-emitting unit; The applied potential of the second gate control electrode is configured as follows: The second gate regulating electrode applies an adapted forward potential relative to the second electrode according to the actual device to reduce the electron carriers injected by the second electrode into the light-emitting material layer, thereby improving the light-emitting efficiency of the light-emitting unit.

3. A light-emitting device structure based on dual-gate regulation according to claim 1, characterized in that: The majority carriers of the light-emitting unit are hole-type carriers; The applied potential of the first gate control electrode is configured as follows: The first gate control electrode applies an adaptive negative potential relative to the first electrode according to the actual device to reduce the hole-type carriers injected by the first electrode into the light-emitting material layer so as to improve the luminous efficiency of the light-emitting unit; The applied potential of the second gate control electrode is configured as follows: The second gate control electrode applies an adaptive negative potential relative to the second electrode according to the actual device to increase the electron carriers injected by the second electrode into the light-emitting material layer, so as to improve the luminescence brightness of the light-emitting unit.

4. A light-emitting device structure based on dual-gate regulation according to claim 1, characterized in that: The light-emitting material of the light-emitting material layer is a quantum dot light-emitting material or an organic light-emitting material; when the light-emitting material of the light-emitting material layer is an organic light-emitting material, the light-emitting unit further includes: a hole injection layer and an electron injection layer; the hole injection layer is located between the first electrode and the hole transport layer, and the electron injection layer is located between the second electrode and the electron transport layer.

5. The light-emitting device structure based on dual-gate regulation according to claim 1, characterized in that: The potential of the first electrode corresponding to the hole transport layer is higher than the potential of the second electrode corresponding to the electron transport layer.

6. A light-emitting device structure based on dual-gate regulation according to claim 1, characterized in that: The first bias power supply and the second bias power supply are adjustable voltage power supplies, and the first bias power supply and the second bias power supply are adjustable voltage power supplies that are adjusted according to the luminous brightness or the luminous efficiency requirements.

7. The light emitting device structure based on dual-gate regulation according to claim 1, characterized in that: A first current-limiting resistor is connected in series between the first gate control electrode and the first bias power supply circuit, and a second current-limiting resistor is connected in series between the second gate control electrode and the second bias power supply circuit.

8. The light emitting device structure based on dual-gate regulation according to claim 1, characterized in that: The first gate control electrode or the second gate control electrode is arranged on the light-emitting side of the device structure and is a transparent electrode.

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