Aircraft infrared stealth method based on semiconductor quantum dots

Abstract

The invention discloses an aircraft infrared stealth method based on semiconductor quantum dots, and the method comprises the following steps: selecting semiconductor quantum dots and a substrate material, and calculating the band gap of the quantum dots according to the band gap of the material; the infrared environment around the aircraft is detected in real time, a background infrared spectrum is obtained, a quantum dot emission spectrum is modeled according to a quantum dot material band gap, and a regulation and control controller calculates an external voltage according to the background infrared spectrum and the quantum dot emission spectrum by using a spectrum matching algorithm to generate a voltage regulation and control instruction; the surface temperature of the aircraft is obtained in real time, voltage dynamic compensation is carried out according to the temperature, a regulation and control instruction is updated according to the voltage regulation and control instruction and the voltage dynamic compensation, and an actuator executes the voltage regulation and control instruction; and evaluating the difference between the estimated stealth effect and the actual measurement result of the aircraft, and carrying out optimization adjustment. According to the real-time background spectrum and temperature of the aircraft, the emission spectrum of the coating quantum dots of the aircraft is dynamically adjusted, and the stealth effect of the aircraft under the infrared condition is guaranteed.

Description

Technical Field

[0001] The present invention relates to the field of aircraft, and in particular to an infrared stealth method for aircraft based on semiconductor quantum dots. Background Art

[0002] With the development of infrared detection technology, especially the widespread application of high-resolution, multi-band infrared sensors, traditional stealth technologies and materials are facing increasing challenges. In order to cope with these advanced detection methods, it is necessary to develop new stealth technologies to reduce the probability of aircraft being discovered. Semiconductor quantum dots have the characteristics of adjustable size and excellent optical properties. By changing the size and composition of quantum dots, their absorption and emission spectra can be precisely controlled to match the infrared radiation characteristics of the surrounding environment. By monitoring environmental changes in real time and adjusting the voltage of the quantum dots to optimize their emission spectrum, the best stealth effect can be achieved. Based on this, the present invention proposes an aircraft infrared stealth method based on semiconductor quantum dots. Summary of the Invention

[0003] The present invention provides an aircraft infrared stealth method based on semiconductor quantum dots, which is characterized by comprising:

[0004] S10, selecting a semiconductor quantum dot material and a substrate material, preparing a quantum dot ink, spraying the ink onto the substrate material of the aircraft, and calculating the band gap of the quantum dot itself based on the band gap of the material;

[0005] S20, real-time detection of the infrared environment around the aircraft, acquisition of the background infrared spectrum, modeling of the quantum dot emission spectrum based on the band gap of the quantum dot material itself, and a control controller using a spectrum matching algorithm to calculate the applied voltage based on the background infrared spectrum and the quantum dot emission spectrum to generate a voltage control instruction;

[0006] S30, acquiring the aircraft surface temperature in real time, performing voltage dynamic compensation according to the temperature, updating the voltage control instruction according to the voltage control instruction and the voltage dynamic compensation, and having the actuator execute the voltage control instruction;

[0007] S40. Evaluate the difference between the estimated stealth effect of the aircraft under infrared conditions and the measured results, and make optimization adjustments.

[0008] As described above, a method for infrared stealth of aircraft based on semiconductor quantum dots is described, in which the selection of semiconductor quantum dot materials needs to be based on the requirements of different infrared bands. Lead sulfide quantum dots are used for the near-infrared band, and mercury telluride quantum dots are used for the mid- and far-infrared bands. Indium arsenide quantum dots and silver nanoparticles are doped for optimization.

[0009] As described above, a method for aircraft infrared stealth based on semiconductor quantum dots is described, wherein the quantum dot emission spectrum modeling is obtained based on the band gap of the quantum dot material combined with experimental fitting, and the band gap of the quantum dot material is composed of the band gap of the material itself and the variable band gap caused by the Stark effect introduced by the external voltage.

[0010] As described above, a method for infrared stealth of an aircraft based on semiconductor quantum dots is described, in which the process of generating voltage control instructions is that the control controller uses the spectral similarity maximization formula to solve the optimal quantum dot emission spectrum based on the acquired background infrared spectrum and quantum dot emission spectrum model, and iteratively calculates the voltage by maximizing the spectral similarity coefficient, and generates a voltage control instruction based on the voltage.

[0011] In the aforementioned semiconductor quantum dot-based infrared stealth method for aircraft, dynamic voltage compensation involves the fact that temperature gradients on the aircraft surface can cause inconsistent infrared radiation characteristics in different areas of the quantum dot coating, increasing the risk of detection. To suppress the radiation inhomogeneity caused by temperature gradients, a compensation voltage is used to dynamically compensate for the quantum dot emission spectrum in each area.

[0012] As described above, a method for aircraft infrared stealth based on semiconductor quantum dots is described, wherein the steps of voltage dynamic compensation are to obtain the aircraft surface temperature in real time by integrating a high-sensitivity temperature sensor; minimize the difference between the existing quantum dot emission spectrum and the optimal quantum dot emission spectrum obtained by solution; calculate the compensation voltage based on the spectral difference; and update the current voltage based on the compensation voltage to complete the voltage dynamic compensation.

[0013] As described above, a method for infrared stealth of an aircraft based on semiconductor quantum dots is provided, wherein the estimated stealth effect of the aircraft is evaluated based on the accuracy of the acquisition parameters, the similarity accuracy between the infrared spectrum of the aircraft quantum dots and the background spectrum, and the accuracy of voltage control.

[0014] The present invention also provides an aircraft infrared stealth system based on semiconductor quantum dots, comprising:

[0015] Material selection and preparation module: used to select semiconductor quantum dot materials and substrate materials, prepare quantum dot ink and spray it onto the aircraft's substrate material, and calculate the quantum dot's own band gap based on the material's band gap;

[0016] The applied voltage calculation module is used to detect the infrared environment around the aircraft in real time, obtain the background infrared spectrum, model the quantum dot emission spectrum based on the band gap of the quantum dot material itself, and use the spectrum matching algorithm to calculate the applied voltage based on the background infrared spectrum and the quantum dot emission spectrum to generate voltage control instructions.

[0017] Voltage dynamic compensation module: used to obtain the aircraft surface temperature in real time, perform voltage dynamic compensation based on the temperature, update the voltage control instruction based on the voltage control instruction and voltage dynamic compensation, and the actuator executes the voltage control instruction;

[0018] Optimization module: used to evaluate the difference between the estimated stealth effect of the aircraft under infrared conditions and the actual measured results, and make optimization adjustments.

[0019] The beneficial effects achieved by the present invention are as follows: the present invention dynamically adjusts the emission spectrum of the quantum dots in the aircraft coating according to the real-time background spectrum and ambient temperature of the aircraft, thereby ensuring the stealth effect of the aircraft under infrared conditions. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments described in the present invention. For ordinary technicians in this field, other drawings can also be obtained based on these drawings.

[0021] Figure 1 This is a flow chart of an aircraft infrared stealth method based on semiconductor quantum dots provided in Example 1 of the present application.

[0022] Figure 2 This is a schematic diagram of an aircraft infrared stealth system based on semiconductor quantum dots provided in Example 2 of the present application. DETAILED DESCRIPTION

[0023] The following is a clear and complete description of the technical solutions in the embodiments of the present invention, in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present invention.

[0024] Example 1

[0025] like Figure 1 As shown, the first embodiment of the present application provides an aircraft infrared stealth method based on semiconductor quantum dots, comprising:

[0026] S10, selecting semiconductor quantum dot materials and substrate materials, preparing quantum dot ink and spraying it onto the substrate material of the aircraft, and calculating the band gap of the quantum dots themselves based on the band gap of the materials.

[0027] Specific semiconductor quantum dot materials are selected to meet the requirements of different infrared bands. Lead sulfide quantum dots are used for the near-infrared band, with a band gap of 0.4-1.5 eV, covering the 1-3 μm band, which is crucial for aircraft infrared stealth in specific environments. Mercury telluride quantum dots are used for the mid- and far-infrared bands, with a band gap of 0.1-0.5 eV, covering the 3-12 μm band, the region where aircraft infrared signatures primarily appear. Lead sulfide quantum dots and mercury telluride quantum dots are doped with indium arsenide quantum dots and silver nanoparticles and modified by doping. The high mobility of indium arsenide quantum dots can compensate for the lower intrinsic mobility of lead sulfide quantum dots, and silver nanoparticles can enhance the absorption of lead sulfide quantum dots above 1.5μm. At the same time, doping indium arsenide quantum dots can extend the response to 3μm; mercury telluride quantum dots doped with indium arsenide quantum dots can shorten the carrier transit time of mercury telluride quantum dots and achieve rapid response. Silver nanoparticles act as electron traps to reduce the thermal excitation noise of mercury telluride quantum dots.

[0028] A flexible graphene / boron nitride heterojunction film was chosen as the substrate. Its ultrahigh thermal conductivity allows for rapid heat transfer, preventing surface heat accumulation while also providing an electrically controllable interface. A transparent indium tin oxide microelectrode array was embedded within the substrate, using photolithography to create electrodes with a line width of 10 μm and a spacing of 200 μm. These electrodes can be used to apply an electric field, enabling localized electric field control of the quantum dots.

[0029] Lead sulfide quantum dot inks were prepared using doped lead sulfide quantum dots, n-hexane and a small amount of ethanol as carrier solvents, low-molecular-weight polyvinylpyrrolidone as a dispersant, and a UV-responsive acrylate as a curing agent. Mercury telluride quantum dot inks were also prepared using doped mercury telluride quantum dots, cyclohexane and a small amount of dimethylformamide as carrier solvents, hyperbranched polycarboxylic acid as a dispersant, and dipentaerythritol acrylate as a curing agent. The prepared quantum dot inks were sprayed onto graphene / boron nitride substrates and then formed into photonic crystal arrays by microcontact printing.

[0030] A core-shell structure is wrapped around the core quantum dot to improve the optical performance and stability of the quantum dot, and to achieve camouflage of visible light to prevent identification by visible light detectors. Using cadmium selenide / zinc sulfide core-shell structure quantum dots, the cadmium selenide core is responsible for light absorption, and the zinc sulfide shell serves as a surface passivation layer to improve stability. At the same time, a gradient band gap multilayer film composed of quantum dots of different sizes is constructed, with the size gradually changing from 8nm to 3nm, covering the full infrared band of 1-14μm. The band gap is adjusted by size change to achieve full-band spectral control. The band gap calculation formula of the quantum dot itself is: Among them, E g,bulk is the band gap of the bulk material, is the reduced Planck constant, R is the radius of the quantum dot, is the effective mass of the electron, is the effective mass of the hole, and ε is the dielectric constant.

[0031] The shell thickness optimization formula is: Where ΔE confinement The energy level shift of electrons or holes caused by the size limitation of quantum dots. is the reduced Planck constant, t shell is the shell thickness, m * is the effective mass of the carrier, R core is the core radius of the quantum dots. The quantum dots are deposited on a substrate to ensure efficient bonding between the shell and the substrate and to suppress non-radiative recombination caused by surface defects.

[0032] S20, real-time detection of the infrared environment around the aircraft, acquisition of the background infrared spectrum, modeling of the quantum dot emission spectrum based on the band gap of the quantum dot material itself, and the control controller using a spectrum matching algorithm to calculate the applied voltage based on the background infrared spectrum and the quantum dot emission spectrum to generate a voltage control instruction.

[0033] S21. Quantum dot emission spectrum modeling.

[0034] The band gap of quantum dot materials is ΔE g is the variable band gap caused by the Stark effect introduced by the external voltage V, and the formula is Where e is the charge of the electron, F is the strength of the applied electric field, d is the diameter of the quantum dot, and ε is the dielectric constant of the material. The degree to which the electric field regulates the band gap of the quantum dot can be precisely controlled. QD (λ) and quantum dot band gap E g Directly related, it needs to be combined with experimental fitting, the specific formula is Where A is the normalization coefficient, is the photon energy, h is Planck's constant, c is the speed of light, and λ is the wavelength of light. σ is the spectral width. The band gap E of the quantum dot material g The quantum dot emission spectrum I is calculated by back-calculating the voltage V through the Stark effect. QD (λ) is adjusted as the voltage V changes.

[0035] S22. The control controller uses a spectrum matching algorithm to calculate the external voltage and generate a voltage control instruction.

[0036] A highly sensitive quantum sensor monitors the infrared environment surrounding the aircraft in real time, acquiring the background infrared spectrum. The sampling wavelength range covers 1-14μm, with a sampling interval of 0.02μm. Background noise is eliminated, and key features of the background spectrum are extracted. These features are then transmitted to a control controller, which calculates the optimal quantum dot emission spectrum for the aircraft based on the background infrared spectral characteristics and a formula that maximizes spectral similarity.

[0037] The specific formula is δ is a measure of I QD and I BG The similarity coefficient, I QD is the emission spectrum of quantum dots, indicating the intensity at different wavelengths λ, I BG is the background infrared spectrum, which represents the intensity at different wavelengths λ, V is the control voltage vector, λ is the wavelength, and traverses the entire spectrum, μ QD is the quantum dot spectrum I QD The average value, μ BG is the quantum dot spectrum I BG The average value of .

[0038] By giving the background spectrum I BG , maximize the coefficient δ, make δ>0.99, and iterate the voltage V through the optimization algorithm until I QD The correlation is optimal, achieving a high correlation between the quantum dot emission spectrum and the background spectrum. The system updates the background spectrum every 1 second. BG , synchronously adjust V, generate voltage control instructions, and reduce the aircraft's identifiability under infrared detectors.

[0039] The specific process of the optimization algorithm is to randomly generate a set of initial voltage values V1, V2, ..., V m Form an initial population, each individual represents a possible voltage value. For each voltage V j , calculate whether the spectral similarity maximization coefficient δ reaches the standard value. Sort the individuals according to the δ value and select the individuals with higher fitness to enter the next generation. Cross the voltage values of the two parent individuals to generate new offspring individuals. The specific formula is V child Represents the daughter voltage, V a , V b represents the parent voltage, is a random number in the range of [0,1]. The voltage value of the offspring individuals is randomly disturbed and mutated in a small range to increase the diversity of the population. The formula is V mutated =V child +γ,V mutated is the voltage after perturbation, and γ is a small random number. The selection, crossover, and mutation operations are repeated until the maximum number of iterations is reached or the fitness converges.

[0040] Theoretical optimal flight vehicle quantum dot emission spectrum I QD Fitting with experimental data, adjusting model parameters, the calibration formula is I QD,exp (λ)=I QD,theory (λ)·SNR(λ), where I QD,exp (λ) represents the spectral intensity of the quantum dots obtained by experimental measurement, I QD,theory(λ) represents the theoretically calculated quantum dot spectral intensity, and SNR is the experimental signal-to-noise ratio to ensure the accuracy of the correlation.

[0041] S30 , acquiring the aircraft surface temperature in real time, performing voltage dynamic compensation according to the temperature, updating the voltage control instruction according to the voltage control instruction and the voltage dynamic compensation, and the actuator executing the voltage control instruction.

[0042] S31. Obtain the aircraft surface temperature in real time and perform dynamic voltage compensation according to the temperature.

[0043] The aircraft surface temperature T(x,y,t) is acquired in real time by integrating a highly sensitive temperature sensor, where x is the horizontal coordinate, y is the vertical coordinate, and t is the time. The quantum dot emission spectrum is affected by temperature and changes as follows: ΔE g (T) = -β(T-T0), is the band gap energy at reference temperature T0, and β is the temperature coefficient.

[0044] Temperature gradients can cause inconsistent infrared radiation characteristics in different areas of the quantum dot coating, increasing the risk of detection. To suppress the radiation inhomogeneity caused by temperature gradients, a compensation voltage can be used to dynamically compensate for the quantum dot emission spectrum in each area.

[0045] The compensation voltage is defined as V other (x,y,t), the compensated voltage is V new (x,y,t)=V current (x,y,t)+V other (x,y,t),V current (x, y, t) is the command voltage, and the compensation goal is to minimize the difference between the existing quantum dot emission spectrum and the optimal aircraft quantum dot emission spectrum obtained by solution. The specific calculation formula for the spectral difference is ΔI(x, y, λ, t) = I' QD (λ,T(x,y,t),V new (x,y,t))-I QD (λ), I' QD (λ,T(x,y,t),V new (x,y,t)) is the emission spectrum of quantum dots after compensation, I QD (λ) is the optimal quantum dot emission spectrum of the aircraft. The compensation voltage is calculated based on the spectral difference. The specific formula is V other (x,y,t)=θ I ΔI(x,y,λ,t)+θ T ΔT(x,y,t)+θ V (T(x,y,t)-T0), where θ Iis the spectrum compensation coefficient, ΔI(x, y, λ, t) is the difference between the current quantum dot emission spectrum and the optimal quantum dot emission spectrum obtained by solution, θ T is the temperature gradient compensation coefficient, ΔT(x,y,t) is the temperature gradient, and the temperature gradient is defined as Expressed as the partial derivative of temperature T in the x-horizontal direction, Expressed as the partial derivative of temperature T in the y-vertical direction, θ V is the temperature compensation coefficient, which is used to adjust the effect of temperature changes on the compensation voltage. T(x,y,t) is the current temperature and T0 is the reference temperature.

[0046] S32. The current voltage is updated according to the compensation voltage, and the actuator executes the latest voltage control instruction.

[0047] The actuator applies a bias voltage to the indium tin oxide microelectrodes on both sides of the substrate to form a transverse electric field. The direction of the electric field is consistent with the direction of photon propagation, ensuring the high efficiency of carrier injection and modulation. The voltage induces the Stark effect and quantum confinement energy level shift, changes the band gap width of the quantum dot, and thus dynamically adjusts the emission wavelength of the infrared quantum dot. Adjust the voltage applied to the quantum dot, the formula is ΔV(t) represents the voltage adjustment amount that changes with time t, that is, the change value of the voltage applied to the quantum dot, K p is the proportional coefficient, which determines the gain of the response to the current error value. e(t) is the error signal, which is the difference between the current actual value and the expected value. K d is the differential coefficient, which reflects the response degree to the rate of change of the error signal. K is the derivative of the error signal e(t) with respect to time t, that is, the rate of change of the error signal over time. i is the integral coefficient, which accumulates the error signal over time to eliminate the steady-state error of the system. It represents the integration operation on time from time 0 to time t, which is the accumulation of the error signal in the time dimension.

[0048] S40. Evaluate the difference between the estimated stealth effect of the aircraft under infrared conditions and the measured results, and make optimization adjustments.

[0049] The estimated stealth effect of the aircraft is evaluated based on the accuracy of the acquisition parameters, the similarity accuracy between the aircraft quantum dot infrared spectrum and the background spectrum, and the accuracy of voltage control. The specific formula is: τ1 represents the weight of the impact of the accuracy of the acquisition parameters on the stealth effect of the aircraft, A sensor Indicates the accuracy of the acquisition parameters, P s Indicates the influence of sensor accuracy and resolution on the accuracy of acquisition parameters, R sIndicates the influence of the stability and drift of the sensor position on the accuracy of the acquired parameters, S s Indicates the influence of the degree of change in the aircraft's environment on the accuracy of the acquisition parameters; τ2 represents the weight of the influence of the similarity accuracy between the aircraft's quantum dot infrared spectrum and the background spectrum on the aircraft's stealth effect; E represents the similarity accuracy between the aircraft's quantum dot infrared spectrum and the background spectrum, Taking into account the stability of similarity change, the smaller the absolute value of the change rate, the smaller the denominator, the larger the overall value, and the better the stealth effect; τ3 represents the accuracy of the voltage control on the stealth effect of the aircraft. The influencing factors include the purity of the quantum dot material, the stability and uniformity of the electric field intensity, the electric field action time, etc., n2 represents the number of influencing factors, V optj represents the optimal value of each voltage-related factor, w j is the weight of each factor, V avg represents the average voltage, It represents the rate of change of average voltage over time, is the rate of change of each voltage factor with time.

[0050] After the stealth evaluation reaches the preset target, the aircraft's stealth performance is tested under infrared radiation, varying environmental conditions, vibration, and shock. This cyclical testing verifies the stability of the quantum dots. Based on the test results, various steps can be adjusted to include selecting sensors with stronger anti-interference capabilities, optimizing spectral acquisition equipment, optimizing electric field application equipment, and optimizing control strategies.

[0051] Example 2

[0052] like Figure 2 As shown, the second embodiment of the present application provides an aircraft infrared stealth system based on semiconductor quantum dots, comprising:

[0053] Material selection and preparation module: used to select semiconductor quantum dot materials and substrate materials, prepare quantum dot ink to be sprayed onto the substrate material of the aircraft, and calculate the band gap of the quantum dot itself based on the band gap of the material.

[0054] Specific semiconductor quantum dot materials are selected to meet the requirements of different infrared bands. Lead sulfide quantum dots are used for the near-infrared band, with a band gap of 0.4-1.5 eV, covering the 1-3 μm band, which is crucial for aircraft infrared stealth in specific environments. Mercury telluride quantum dots are used for the mid- and far-infrared bands, with a band gap of 0.1-0.5 eV, covering the 3-12 μm band, the region where aircraft infrared signatures primarily appear. Lead sulfide quantum dots and mercury telluride quantum dots are doped with indium arsenide quantum dots and silver nanoparticles and modified by doping. The high mobility of indium arsenide quantum dots can compensate for the lower intrinsic mobility of lead sulfide quantum dots, and silver nanoparticles can enhance the absorption of lead sulfide quantum dots above 1.5μm. At the same time, doping indium arsenide quantum dots can extend the response to 3μm; mercury telluride quantum dots doped with indium arsenide quantum dots can shorten the carrier transit time of mercury telluride quantum dots and achieve rapid response. Silver nanoparticles act as electron traps to reduce the thermal excitation noise of mercury telluride quantum dots.

[0055] A flexible graphene / boron nitride heterojunction film was chosen as the substrate. Its ultrahigh thermal conductivity allows for rapid heat transfer, preventing surface heat accumulation while also providing an electrically controllable interface. A transparent indium tin oxide microelectrode array was embedded within the substrate, using photolithography to create electrodes with a line width of 10 μm and a spacing of 200 μm. These electrodes can be used to apply an electric field, enabling localized electric field control of the quantum dots.

[0056] Lead sulfide quantum dot inks were prepared using doped lead sulfide quantum dots, n-hexane and a small amount of ethanol as carrier solvents, low-molecular-weight polyvinylpyrrolidone as a dispersant, and a UV-responsive acrylate as a curing agent. Mercury telluride quantum dot inks were also prepared using doped mercury telluride quantum dots, cyclohexane and a small amount of dimethylformamide as carrier solvents, hyperbranched polycarboxylic acid as a dispersant, and dipentaerythritol acrylate as a curing agent. The prepared quantum dot inks were sprayed onto graphene / boron nitride substrates and then formed into photonic crystal arrays by microcontact printing.

[0057] A core-shell structure is wrapped around the core quantum dot to improve the optical performance and stability of the quantum dot, and to achieve camouflage of visible light to prevent identification by visible light detectors. Using cadmium selenide / zinc sulfide core-shell structure quantum dots, the cadmium selenide core is responsible for light absorption, and the zinc sulfide shell serves as a surface passivation layer to improve stability. At the same time, a gradient band gap multilayer film composed of quantum dots of different sizes is constructed, with the size gradually changing from 8nm to 3nm, covering the full infrared band of 1-14μm. The band gap is adjusted by size change to achieve full-band spectral control. The band gap calculation formula of the quantum dot itself is: Among them, E g,bulk is the band gap of the bulk material, is the reduced Planck constant, R is the radius of the quantum dot, is the effective mass of the electron, is the effective mass of the hole, and ε is the dielectric constant.

[0058] The shell thickness optimization formula is: Where ΔE confinement The energy level shift of electrons or holes caused by the size limitation of quantum dots. is the reduced Planck constant, t shell is the shell thickness, m * is the effective mass of the carrier, R core is the core radius of the quantum dots. The quantum dots are deposited on a substrate to ensure efficient bonding between the shell and the substrate and to suppress non-radiative recombination caused by surface defects.

[0059] Calculation of applied voltage module: includes modeling submodule and calculation voltage submodule.

[0060] Modeling submodule: used for quantum dot emission spectrum modeling.

[0061] The band gap of quantum dot materials is ΔE g is the variable band gap caused by the Stark effect introduced by the external voltage V, and the formula is Where e is the charge of the electron, F is the strength of the applied electric field, d is the diameter of the quantum dot, and ε is the dielectric constant of the material. The degree to which the electric field regulates the band gap of the quantum dot can be precisely controlled. QD (λ) and quantum dot band gap E g Directly related, it needs to be combined with experimental fitting, the specific formula is Where A is the normalization coefficient, is the photon energy, h is Planck's constant, c is the speed of light, and λ is the wavelength of light. σ is the spectral width. The band gap E of the quantum dot material g The quantum dot emission spectrum I is calculated by back-calculating the voltage V through the Stark effect. QD (λ) is adjusted as the voltage V changes.

[0062] Voltage calculation submodule: The control controller uses the spectrum matching algorithm to calculate the applied voltage and generate voltage control instructions.

[0063] A highly sensitive quantum sensor monitors the infrared environment surrounding the aircraft in real time, acquiring the background infrared spectrum. The sampling wavelength range covers 1-14μm, with a sampling interval of 0.02μm. Background noise is eliminated, and key features of the background spectrum are extracted. These features are then transmitted to a control controller, which calculates the optimal quantum dot emission spectrum for the aircraft based on the background infrared spectral characteristics and a formula that maximizes spectral similarity.

[0064] The specific formula is δ is a measure of I QD and I BG The similarity coefficient, I QDis the emission spectrum of quantum dots, indicating the intensity at different wavelengths λ, I BG is the background infrared spectrum, which represents the intensity at different wavelengths λ, V is the control voltage vector, λ is the wavelength, and traverses the entire spectrum, μ QD is the quantum dot spectrum I QD The average value, μ BG is the quantum dot spectrum I BG The average value of .

[0065] By giving the background spectrum I BG , maximize the coefficient δ, make δ>0.99, and iterate the voltage V through the optimization algorithm until I QD The correlation is optimal, achieving a high correlation between the quantum dot emission spectrum and the background spectrum. The system updates the background spectrum every 1 second. BG , synchronously adjust V, generate voltage control instructions, and reduce the aircraft's identifiability under infrared detectors.

[0066] The specific process of the optimization algorithm is to randomly generate a set of initial voltage values V1, V2, ..., V m Form an initial population, each individual represents a possible voltage value. For each voltage V j , calculate whether the spectral similarity maximization coefficient δ reaches the standard value. Sort the individuals according to the δ value and select the individuals with higher fitness to enter the next generation. Cross the voltage values of the two parent individuals to generate new offspring individuals. The specific formula is V child Represents the daughter voltage, V a , V b represents the parent voltage, is a random number in the range of [0,1]. The voltage value of the offspring individuals is randomly disturbed and mutated in a small range to increase the diversity of the population. The formula is V mutated =V child +γ,V mutated is the voltage after perturbation, and γ is a small random number. The selection, crossover, and mutation operations are repeated until the maximum number of iterations is reached or the fitness converges.

[0067] Theoretical optimal flight vehicle quantum dot emission spectrum I QD Fitting with experimental data, adjusting model parameters, the calibration formula is I QD,exp (λ)=I QD,theory (λ)·SNR(λ), where I QD,exp (λ) represents the spectral intensity of the quantum dots obtained by experimental measurement, I QD,theory (λ) represents the theoretically calculated quantum dot spectral intensity, and SNR is the experimental signal-to-noise ratio to ensure the accuracy of the correlation.

[0068] Voltage dynamic compensation module: includes compensation voltage calculation submodule and update submodule.

[0069] Compensation voltage calculation submodule: used to obtain the aircraft surface temperature in real time and perform dynamic voltage compensation based on the temperature.

[0070] The aircraft surface temperature T(x,y,t) is acquired in real time by integrating a highly sensitive temperature sensor, where x is the horizontal coordinate, y is the vertical coordinate, and t is the time. The quantum dot emission spectrum is affected by temperature and changes as follows: ΔE g (T) = -β(T-T0), is the band gap energy at reference temperature T0, and β is the temperature coefficient.

[0071] Temperature gradients can cause inconsistent infrared radiation characteristics in different areas of the quantum dot coating, increasing the risk of detection. To suppress the radiation inhomogeneity caused by temperature gradients, a compensation voltage can be used to dynamically compensate for the quantum dot emission spectrum in each area.

[0072] The compensation voltage is defined as V other (x,y,t), the compensated voltage is V new (x,y,t)=V current (x,y,t)+V other (x,y,t),V current (x, y, t) is the command voltage, and the compensation goal is to minimize the difference between the existing quantum dot emission spectrum and the optimal aircraft quantum dot emission spectrum obtained by solution. The specific calculation formula for the spectral difference is ΔI(x, y, λ, t) = I' QD (λ,T(x,y,t),V new (x,y,t))-I QD (λ), I' QD (λ,T(x,y,t),V new (x,y,t)) is the emission spectrum of quantum dots after compensation, I QD (λ) is the optimal quantum dot emission spectrum of the aircraft. The compensation voltage is calculated based on the spectral difference. The specific formula is V other (x,y,t)=θ I ΔI(x,y,λ,t)+θ T ΔT(x,y,t)+θ V (T(x,y,t)-T0), where θ I is the spectrum compensation coefficient, ΔI(x, y, λ, t) is the difference between the current quantum dot emission spectrum and the optimal quantum dot emission spectrum obtained by solution, θ T is the temperature gradient compensation coefficient, ΔT(x,y,t) is the temperature gradient, and the temperature gradient is defined as Expressed as the partial derivative of temperature T in the x-horizontal direction, Expressed as the partial derivative of temperature T in the y-vertical direction, θ V is the temperature compensation coefficient, which is used to adjust the effect of temperature changes on the compensation voltage. T(x,y,t) is the current temperature and T0 is the reference temperature.

[0073] Update submodule: used to update the current voltage according to the compensation voltage, and the actuator executes the latest voltage control instructions.

[0074] The actuator applies a bias voltage to the indium tin oxide microelectrodes on both sides of the substrate to form a transverse electric field. The direction of the electric field is consistent with the direction of photon propagation, ensuring the high efficiency of carrier injection and modulation. The voltage induces the Stark effect and quantum confinement energy level shift, changes the band gap width of the quantum dot, and thus dynamically adjusts the emission wavelength of the infrared quantum dot. Adjust the voltage applied to the quantum dot, the formula is ΔV(t) represents the voltage adjustment amount that changes with time t, that is, the change value of the voltage applied to the quantum dot, K p is the proportional coefficient, which determines the gain of the response to the current error value. e(t) is the error signal, which is the difference between the current actual value and the expected value. K d is the differential coefficient, which reflects the response degree to the rate of change of the error signal. K is the derivative of the error signal e(t) with respect to time t, that is, the rate of change of the error signal over time. i is the integral coefficient, which accumulates the error signal over time to eliminate the steady-state error of the system. It represents the integration operation on time from time 0 to time t, which is the accumulation of the error signal in the time dimension.

[0075] Optimization module: used to evaluate the difference between the estimated stealth effect of the aircraft under infrared conditions and the actual measured results, and make optimization adjustments.

[0076] The estimated stealth effect of the aircraft is evaluated based on the accuracy of the acquisition parameters, the similarity accuracy between the aircraft quantum dot infrared spectrum and the background spectrum, and the accuracy of voltage control. The specific formula is: τ1 represents the weight of the impact of the accuracy of the acquisition parameters on the stealth effect of the aircraft, A sensor Indicates the accuracy of the acquisition parameters, P s Indicates the influence of sensor accuracy and resolution on the accuracy of acquisition parameters, R s Indicates the influence of the stability and drift of the sensor position on the accuracy of the acquired parameters, S sIndicates the influence of the degree of change in the aircraft's environment on the accuracy of the acquisition parameters; τ2 represents the weight of the influence of the similarity accuracy between the aircraft's quantum dot infrared spectrum and the background spectrum on the aircraft's stealth effect; E represents the similarity accuracy between the aircraft's quantum dot infrared spectrum and the background spectrum, Taking into account the stability of similarity change, the smaller the absolute value of the change rate, the smaller the denominator, the larger the overall value, and the better the stealth effect; τ3 represents the accuracy of the voltage control on the stealth effect of the aircraft. The influencing factors include the purity of the quantum dot material, the stability and uniformity of the electric field intensity, the electric field action time, etc., n2 represents the number of influencing factors, V optj represents the optimal value of each voltage-related factor, w j is the weight of each factor, V avg represents the average voltage, It represents the rate of change of average voltage over time, is the rate of change of each voltage factor with time.

[0077] After the stealth evaluation reaches the preset target, the aircraft's stealth performance is tested under infrared radiation, varying environmental conditions, vibration, and shock. This cyclical testing verifies the stability of the quantum dots. Based on the test results, various steps can be adjusted to include selecting sensors with stronger anti-interference capabilities, optimizing spectral acquisition equipment, optimizing electric field application equipment, and optimizing control strategies.

[0078] The specific implementation methods described above further illustrate the objectives, technical solutions and beneficial effects of the present invention in detail. It should be understood that the above description is only a specific implementation method of the present invention and is not intended to limit the scope of protection of the present invention. Any modifications, equivalent replacements, improvements, etc. made on the basis of the technical solution of the present invention should be included in the scope of protection of the present invention.

Claims

1. A method for aircraft infrared stealth based on semiconductor quantum dots, characterized in that: include: S10, selecting a semiconductor quantum dot material and a substrate material, preparing a quantum dot ink, spraying the ink onto the substrate material of the aircraft, and calculating the band gap of the quantum dot itself based on the band gap of the material; S20, real-time detection of the infrared environment around the aircraft, acquisition of the background infrared spectrum, modeling of the quantum dot emission spectrum based on the band gap of the quantum dot material itself, and a control controller using a spectrum matching algorithm to calculate the applied voltage based on the background infrared spectrum and the quantum dot emission spectrum to generate a voltage control instruction; S30, acquiring the aircraft surface temperature in real time, performing voltage dynamic compensation according to the temperature, updating the voltage control instruction according to the voltage control instruction and the voltage dynamic compensation, and having the actuator execute the voltage control instruction; S40. Evaluate the difference between the estimated stealth effect of the aircraft under infrared conditions and the measured results, and make optimization adjustments.

2. The infrared stealth method for aircraft based on semiconductor quantum dots according to claim 1, characterized in that: The selection of semiconductor quantum dot materials needs to be based on the requirements of different infrared bands. Lead sulfide quantum dots are used for the near-infrared band, mercury telluride quantum dots are used for the mid- and far-infrared bands, and indium arsenide quantum dots and silver nanoparticles are doped for optimization.

3. The infrared stealth method for aircraft based on semiconductor quantum dots according to claim 1, characterized in that: The quantum dot emission spectrum modeling is obtained based on the band gap of the quantum dot material combined with experimental fitting. The band gap of the quantum dot material is composed of the band gap of the material itself and the variable band gap caused by the Stark effect introduced by the external voltage.

4. The method for infrared stealth of an aircraft based on semiconductor quantum dots according to claim 1, characterized in that: The process of generating voltage control instructions is that the control controller uses the spectral similarity maximization formula to solve the optimal quantum dot emission spectrum based on the acquired background infrared spectrum and quantum dot emission spectrum model, iteratively calculates the voltage by maximizing the spectral similarity coefficient, and generates voltage control instructions based on the voltage.

5. The method for infrared stealth of an aircraft based on semiconductor quantum dots according to claim 1, characterized in that: Dynamic voltage compensation refers to the fact that temperature gradients on the aircraft surface can cause inconsistent infrared radiation characteristics in different areas of the quantum dot coating, increasing the risk of detection. To suppress the radiation inhomogeneity caused by temperature gradients, a compensation voltage is used to dynamically compensate for the quantum dot emission spectrum in each area.

6. The method for infrared stealth of an aircraft based on semiconductor quantum dots according to claim 5, characterized in that: The steps for dynamic voltage compensation are to obtain the aircraft surface temperature in real time through an integrated high-sensitivity temperature sensor; minimize the difference between the existing quantum dot emission spectrum and the optimal quantum dot emission spectrum obtained by solution; calculate the compensation voltage based on the spectral difference; and update the current voltage based on the compensation voltage to complete dynamic voltage compensation.

7. The method for infrared stealth of an aircraft based on semiconductor quantum dots according to claim 1, characterized in that: The estimated stealth effect of the aircraft is evaluated based on the accuracy of the acquisition parameters, the similarity accuracy between the aircraft's quantum dot infrared spectrum and the background spectrum, and the accuracy of voltage control.

8. An aircraft infrared stealth system based on semiconductor quantum dots, characterized in that: include: Material selection and preparation module: used to select semiconductor quantum dot materials and substrate materials, prepare quantum dot ink and spray it onto the aircraft's substrate material, and calculate the quantum dot's own band gap based on the material's band gap; The applied voltage calculation module is used to detect the infrared environment around the aircraft in real time, obtain the background infrared spectrum, model the quantum dot emission spectrum based on the band gap of the quantum dot material itself, and use the spectrum matching algorithm to calculate the applied voltage based on the background infrared spectrum and the quantum dot emission spectrum to generate voltage control instructions. Voltage dynamic compensation module: used to obtain the aircraft surface temperature in real time, perform voltage dynamic compensation based on the temperature, update the voltage control instruction based on the voltage control instruction and voltage dynamic compensation, and the actuator executes the voltage control instruction; Optimization module: used to evaluate the difference between the estimated stealth effect of the aircraft under infrared conditions and the actual measured results, and make optimization adjustments.

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