Chip detection method and device

Abstract

The present invention provides a chip detection method and device, which relate to the technical field of lasers. The chip detection method provided by the present invention includes the following steps: step S10. obtaining a near-field distribution image of transverse electric mode light and a near-field distribution image of transverse magnetic mode light emitted by the chip to be detected; step S20. calculating the value of the polarization ratio K of the chip to be detected based on the near-field distribution image of the transverse electric mode light and the near-field distribution image of the transverse magnetic mode light, wherein the polarization ratio K is the polarization ratio of the transverse electric mode light or the transverse magnetic mode light; step S30. comparing the calculated value of the polarization ratio K with a standard range; when the value of the polarization ratio K is within the standard range, determining that the stress of the chip to be detected is qualified; when the value of the polarization ratio K is not within the standard range, determining that the stress of the chip to be detected is unqualified; step S40. for the chip to be detected with unqualified stress, obtaining the defect position on the chip to be detected that causes the unqualified stress based on the near-field distribution image of its transverse magnetic mode light.

Description

Technical Field

[0001] The present invention relates to the field of laser technology, and in particular to a chip detection method and device. Background Art

[0002] Laser chips, core components of modern optoelectronics, are widely used in communications, healthcare, industrial processing, and other fields. Their manufacturing process involves complex semiconductor processes, including epitaxial growth, photolithography, etching, metallization, and other steps. During laser chip production, varying degrees of stress may be generated within the chip due to factors such as material thermal expansion coefficient mismatch, improper process parameter control, and packaging stress. This stress can cause changes in the chip's band structure, affecting key performance indicators such as carrier mobility and luminous efficiency, and in severe cases, even leading to chip failure.

[0003] Currently, stress detection primarily relies on offline methods such as X-ray diffraction and Raman spectroscopy. While these methods can provide information on stress distribution, they cannot reflect stress changes during the production process in real time, and it is difficult to precisely locate the source of stress. Therefore, timely detection of stress problems and accurate analysis of their causes during laser chip production are crucial for optimizing production processes and improving product yield. Summary of the Invention

[0004] The object of the present invention is to provide a chip detection method and device to alleviate the technical problem of difficulty in determining chip stress in the prior art.

[0005] In a first aspect, the present invention provides a chip detection method comprising the steps of:

[0006] Step S10. Acquire a near-field distribution image of the transverse electric mode light and a near-field distribution image of the transverse magnetic mode light emitted by the chip to be tested;

[0007] Step S20. Calculating the polarization ratio K of the chip to be inspected based on the near-field distribution image of the transverse electric mode light and the near-field distribution image of the transverse magnetic mode light, wherein the polarization ratio K is the polarization ratio of the transverse electric mode light or the transverse magnetic mode light;

[0008] Step S30. Comparing the calculated polarization ratio K value with the standard range;

[0009] When the value of the polarization ratio K is within the standard range, it is determined that the stress of the chip to be tested is qualified;

[0010] When the value of the polarization ratio K is not within the standard range, it is determined that the stress of the chip to be tested is unqualified;

[0011] Step S40: For the chip to be tested that fails to meet the stress requirements, the defect location on the chip to be tested that causes the stress failure is determined based on the near-field distribution image of the transverse magnetic mode light.

[0012] Furthermore, the region whose horizontal coordinates in the near-field distribution image of the transverse magnetic mode light correspond to the positions of the two ridge waveguides in the chip to be detected has a first peak and a second peak, and the horizontal coordinates corresponding to the peak values ​​of the first peak and the second peak are x1 and x2, respectively; the region whose horizontal coordinates in the near-field distribution image of the transverse magnetic mode light correspond to the position of the injection region in the chip to be detected forms a middle portion, and the horizontal coordinates corresponding to the two ends of the middle portion are x3 and x4, respectively, and x1<x3<x4<x2;

[0013] In step S40, the step of obtaining the defect location on the chip that causes stress failure based on the near-field distribution image of the transverse magnetic mode light specifically includes:

[0014] In the near-field distribution image of the transverse magnetic mode light, determining whether there is a peak in a portion with a horizontal coordinate between x1 and x3, or a portion with a horizontal coordinate between x4 and x2;

[0015] When a peak exists, there is a problem with the ridge waveguide etching of the chip to be tested, resulting in stress failure;

[0016] When there is no peak, there is no problem with the ridge waveguide etching of the chip to be inspected.

[0017] Furthermore, the region whose abscissa in the near-field distribution image of the transverse magnetic mode light corresponds to the position of the injection region in the chip to be detected forms a middle portion;

[0018] In step S40, the step of obtaining the defect location on the chip that causes stress failure based on the near-field distribution image of the transverse magnetic mode light specifically includes:

[0019] comparing the peak intensity of the middle portion of the near-field distribution image of the transverse magnetic mode light with a first preset value;

[0020] When the peak intensity of the middle portion is greater than or equal to the first preset value, the packaging of the chip to be tested is poor, resulting in stress failure;

[0021] When the peak intensity of the middle portion is less than the first preset value, the packaging of the chip to be inspected is good.

[0022] Furthermore, in step S10, the near-field distribution image of the transverse electric mode light and the near-field distribution image of the transverse magnetic mode light emitted by the chip to be detected are simultaneously acquired.

[0023] Furthermore, the chip detection method utilizes a chip detection device to detect the chip to be detected;

[0024] The chip detection method includes the following steps before step S10:

[0025] The chip detection device is calibrated using a standard chip.

[0026] Furthermore, the step of calibrating the chip detection device using the standard chip specifically includes:

[0027] Step S1. Installing a standard chip on a chip detection device, wherein the value of the standard polarization ratio A of the standard chip is a known value a;

[0028] Step S2. The polarization ratio B of the standard chip is measured and calculated by the chip detection device, and the value is b;

[0029] Step S3. Adjust the optical path in the chip detection device according to b and a so that the difference between b and a is within the allowable accuracy range, and the standard polarization ratio A, polarization ratio B and polarization ratio K are all polarization ratios of transverse electric mode light or transverse magnetic mode light.

[0030] Furthermore, the chip detection method further includes the following steps before step S10:

[0031] Adjust the temperature of the working environment of the chip to be tested so that the temperature of the working environment is within a preset temperature range.

[0032] In a second aspect, the present invention provides a chip detection device, which is used to implement the above-mentioned chip detection method;

[0033] The chip detection device includes:

[0034] Sample stage, used to fix the chip to be tested;

[0035] A zoom system, used to zoom the light beam emitted by the chip to be detected;

[0036] A polarization system, wherein the polarization system is used to separate the light beam into transverse electric mode light and transverse magnetic mode light, and emit the light beam to the image acquisition system;

[0037] An image acquisition system, wherein the image acquisition system is used to acquire a near-field distribution image of transverse electric mode light and a near-field distribution image of transverse magnetic mode light;

[0038] The chip detection device also includes a controller, which is connected to the image acquisition system and calculates the polarization ratio K value of the chip to be detected based on the near-field distribution image of the transverse electric mode light and the near-field distribution image of the transverse magnetic mode light, wherein the polarization ratio K is the polarization ratio of the transverse electric mode light or the transverse magnetic mode light; and compares the calculated polarization ratio K value with the standard range; when the polarization ratio K value is within the standard range, it is determined that the stress of the chip to be detected is qualified; when the polarization ratio K value is not within the standard range, it is determined that the stress of the chip to be detected is unqualified; for the chip to be detected with unqualified stress, the defect location on the chip that causes abnormal stress is obtained based on the near-field distribution image of its transverse magnetic mode light.

[0039] Furthermore, the polarization system is used to separate the light into transverse electric mode light and transverse magnetic mode light and emit them in different directions simultaneously;

[0040] The image acquisition system includes a first acquisition module and a second acquisition module, wherein the first acquisition module and the second acquisition module are respectively located in the emission direction of the transverse electric mode light and the emission direction of the transverse magnetic mode light;

[0041] The first acquisition module is used to acquire a near-field distribution image of transverse electric mode light, and the second acquisition module is used to acquire a near-field distribution image of transverse magnetic mode light.

[0042] Furthermore, the zoom system includes a main body and a plurality of lenses, wherein the lenses are detachably connected to the main body so that one of the lenses can be selectively connected to the main body; at least two of the lenses have different focal lengths; and / or at least two of the lenses have different magnifications;

[0043] And / or, a temperature control mechanism is provided on the sample stage for controlling the temperature of the sample stage.

[0044] The present invention has at least the following advantages or beneficial effects:

[0045] The chip detection method provided by the present invention includes the following steps: step S10. obtaining a near-field distribution image of transverse electric mode light and a near-field distribution image of transverse magnetic mode light emitted by the chip to be detected; step S20. calculating a polarization ratio K value of the chip to be detected based on the near-field distribution image of the transverse electric mode light and the near-field distribution image of the transverse magnetic mode light, wherein the polarization ratio K is the polarization ratio of the transverse electric mode light or the transverse magnetic mode light; step S30. comparing the calculated polarization ratio K value with a standard range; when the polarization ratio K value is within the standard range, determining that the stress of the chip to be detected is qualified; when the polarization ratio K value is not within the standard range, determining that the stress of the chip to be detected is unqualified; step S40. for the chip to be detected with unqualified stress, determining the defect position on the chip to be detected that causes the unqualified stress based on the near-field distribution image of its transverse magnetic mode light.

[0046] The polarization ratio K of the chip under test can be used to determine whether the stress of the chip under test meets the requirements, completing the initial test. For chips under test that fail stress testing, the near-field distribution image of their transverse magnetic mode light can be used to determine the defect location on the chip that causes the stress failure. This allows for rapid location of the defect on the chip, providing guidance for subsequent chip fabrication and improvement. This allows optimization of the epitaxial structure or device structure corresponding to the chip defect location, as well as improvements to the fabrication process, to enhance chip yield, reliability, and performance. BRIEF DESCRIPTION OF THE DRAWINGS

[0047] In order to more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the specific embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0048] Figure 1 A schematic diagram of a chip detection device provided by an embodiment of the present invention;

[0049] Figure 2 The near-field distribution image of transverse electric mode light and the near-field distribution image of transverse magnetic mode light emitted by a poorly packaged chip obtained in the chip detection method provided by an embodiment of the present invention;

[0050] Figure 3 The near-field distribution images of transverse electric mode light and transverse magnetic mode light emitted by a chip with ridge waveguide etching problems obtained in the chip detection method provided by an embodiment of the present invention;

[0051] Figure 4 These are the near-field distribution images of transverse electric mode light and the near-field distribution images of transverse magnetic mode light emitted by a qualified chip obtained in the chip detection method provided by an embodiment of the present invention.

[0052] Icons: 1-sample stage; 2-chip to be tested; 3-zoom system; 31-lens; 4-polarization system; 51-first acquisition module; 52-second acquisition module. DETAILED DESCRIPTION

[0053] To make the objectives, technical solutions, and advantages of the embodiments of the present invention more clear, the technical solutions of the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Generally, the components of the embodiments of the present invention described and shown in the drawings herein can be arranged and designed in various different configurations.

[0054] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the invention as claimed, but rather merely represents selected embodiments of the present invention. All other embodiments derived by persons of ordinary skill in the art based on the embodiments of the present invention without creative effort shall fall within the scope of protection of the present invention.

[0055] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, it does not need to be further defined or explained in subsequent drawings.

[0056] In the description of the present invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer" and the like indicate positions or locations based on the positions shown in the accompanying drawings, or the positions or locations in which the inventive product is typically placed when in use. These terms are intended solely to facilitate the description of the present invention and to simplify the description, and are not intended to indicate or imply that the devices or components referred to must have a specific orientation, be constructed, or operate in a specific orientation. Therefore, they should not be construed as limitations on the present invention. Furthermore, the terms "first," "second," and "third," etc., are used solely to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0057] Furthermore, terms such as "horizontal" and "vertical" do not necessarily mean that a component must be absolutely horizontal or overhanging, but rather that it can be slightly tilted. For example, "horizontal" simply means that its direction is more horizontal than "vertical," and does not mean that the structure must be completely horizontal, but rather that it can be slightly tilted.

[0058] In the description of the present invention, it should also be noted that, unless otherwise expressly specified or limited, the terms "disposed," "installed," "connected," and "connected" should be understood in a broad sense. For example, they may refer to fixed connections, detachable connections, or integral connections; they may refer to mechanical connections or electrical connections; they may refer to direct connections or indirect connections through an intermediate medium; and they may refer to internal communication between two components. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on the specific circumstances.

[0059] The chip detection method provided by the present invention comprises the steps of:

[0060] Step S10 : Acquire a near-field distribution image of the transverse electric mode light (TE light) and a near-field distribution image of the transverse magnetic mode light (TM light) emitted by the chip 2 to be inspected.

[0061] like Figure 1 As shown, a chip detection device can be used to detect the chip 2 to be detected.

[0062] The chip detection device comprises: a sample stage 1, a zoom system 3, a polarization system 4 and an image acquisition system, which are arranged in sequence along the optical path.

[0063] Among them, the sample stage 1 is used to fix the chip to be tested 2. Before the test, the chip to be tested 2 is installed on the sample stage 1. The sample stage 1 is provided with a temperature control mechanism for controlling the temperature of the sample stage 1. The temperature control mechanism may include a heater and a cooling water flow channel to achieve heating and cooling, and adjust the temperature of the working environment of the chip to be tested 2 so that the temperature of the working environment is within a preset temperature range. The preset temperature range can be the temperature range of the actual working environment of the chip.

[0064] The zoom system 3 is used to zoom the light emitted by the chip 2 to be detected. The zoom system 3 includes a main body and multiple lenses 31. The focal lengths and magnifications of the multiple lenses 31 can be different. The main body is fixed and the lenses 31 are detachably connected to the main body. The user can select a suitable lens 31 to connect to the main body according to the specifications of the chip 2 to be detected, so as to obtain a clear near-field distribution image in the image acquisition system. The setting of the zoom system 3 can match the measurement of chips 2 to be detected of different specifications. The conventional near-field horizontal width of a single-mode communication laser chip is within 10μm. A high-magnification lens is used to obtain finer near-field distribution details. When detecting a large-area laser array, switch to a low-magnification lens to cover a larger test area.

[0065] The polarization system 4 is used to separate the light into transverse electric mode light and transverse magnetic mode light, and synchronously emit the light to the image acquisition system.

[0066] The image acquisition system includes a first acquisition module 51 and a second acquisition module 52, located in the emission directions of transverse electric mode light and transverse magnetic mode TM light, respectively. The first acquisition module 51 is used to capture near-field distribution images of the transverse electric mode light, while the second acquisition module 52 is used to capture near-field distribution images of the transverse magnetic mode light. Light emitted by the chip 2 to be tested is separated by the polarization system 4 and then simultaneously emitted to the first acquisition module 51 and the second acquisition module 52, thereby enabling simultaneous detection of transverse electric and transverse magnetic mode light. This avoids time differences caused by sequential testing, effectively reduces interference from environmental factors (such as temperature and humidity changes) on test results, and ensures highly synchronized and comparable data.

[0067] Step S20. Calculate the polarization ratio K of the chip 2 to be tested based on the near-field distribution image of the transverse electric mode light and the near-field distribution image of the transverse magnetic mode light, where the polarization ratio K is the polarization ratio of the transverse electric mode light or the transverse magnetic mode light, the polarization ratio of the transverse electric mode light (TE light) is TE / (TE+TM), and the polarization ratio of the transverse magnetic mode light (TM light) is TM / (TE+TM).

[0068] Calculating the polarization ratio K of the chip to be inspected 2 based on the near-field distribution image of the transverse electric mode light and the near-field distribution image of the transverse magnetic mode light belongs to the prior art.

[0069] Step S30. Compare the calculated polarization ratio K value with the standard range; when the polarization ratio K value is within the standard range, determine that the stress of the chip 2 to be tested is qualified; when the polarization ratio K value is not within the standard range, determine that the stress of the chip 2 to be tested is unqualified.

[0070] Taking the polarization ratio of transverse magnetic mode light as an example, the standard range can be set to 0-7%. If it is greater than 7%, the chip fails the stress test.

[0071] Step S40 . For the chip 2 to be inspected that fails to meet the stress requirements, the defect location on the chip 2 to be inspected that causes the stress failure is determined based on the near-field distribution image of its transverse magnetic mode light.

[0072] For chips 2 under test that fail stress testing, the defect location causing the stress failure is determined based on the near-field distribution image of its transverse magnetic mode light. This allows for rapid location of the defect on the chip, providing guidance for subsequent chip fabrication and improvement. In step S40, the near-field distribution image of the transverse magnetic mode light of the chip under test 2 can be compared with a standard image. The program then directly determines the image similarity, using a method similar to AOI inspection.

[0073] Specific content of image analysis:

[0074] like Figure 4 As shown, since a ridge waveguide structure must be processed on the existing chip, the area whose horizontal coordinates in the near-field distribution image of the transverse magnetic mode light correspond to the positions of the two ridge waveguides (RDG) in the chip 2 to be detected has a first peak and a second peak. The first peak and the second peak are both convex curves, and the horizontal coordinates corresponding to the peak values ​​of the first peak and the second peak are x1 and x2, respectively, and x1<x2.

[0075] The area whose horizontal coordinate in the near-field distribution image of the transverse magnetic mode light corresponds to the position of the injection region (PWD) in the chip 2 to be tested forms a middle part. The horizontal coordinates corresponding to the two ends of the middle part are x3 and x4, respectively, and x1<x3<x4<x2. For a qualified chip, the middle part of the near-field distribution image of the transverse magnetic mode light has no obvious peak, that is, it is roughly a straight line.

[0076] In step S40, the step of obtaining the defect location on the chip that causes stress failure based on the near-field distribution image of the transverse magnetic mode light specifically includes:

[0077] In the near-field distribution image of the transverse magnetic mode light, determine whether there is a peak in the portion with the horizontal coordinate between x1 and x3, or between x4 and x2, wherein the peak is a convex curve, that is, the curve has a trend of first rising and then falling; when a peak exists, it is determined that there is a problem with the ridge waveguide etching of the chip to be tested 2, such as Figure 3 As shown in FIG2 ; when no peak exists, it is determined that there is no problem with the ridge waveguide etching of the chip to be tested 2. When there is a problem with the ridge waveguide etching, it can provide a parameter reference for the front-end chip preparation, thereby optimizing the preparation steps and setting parameters of the front-end chip, thereby alleviating or avoiding the problem of ridge waveguide etching, and pointing out the direction for improving the chip preparation process.

[0078] Furthermore, in step S40, the step of obtaining the defect location on the chip that causes stress failure based on the near-field distribution image of the transverse magnetic mode light specifically includes:

[0079] The peak intensity of the middle part of the near-field distribution image of the transverse magnetic mode light is compared with the first preset value; when the peak intensity of the middle part is greater than or equal to the first preset value (for example, 0.01), the packaging of the chip 2 to be tested is poor, resulting in stress failure, such as Figure 2 As shown in the figure, when the peak intensity in the middle portion is less than the first preset value, the package of the chip under test 2 is good. In other words, a high peak intensity in the middle portion of the near-field distribution image of the transverse magnetic mode light directly indicates poor package quality of the chip under test 2, resulting in unqualified stress. This provides a parameter reference for front-end chip preparation, thereby optimizing the preparation steps and setting parameters, thereby alleviating or avoiding poor package quality. This allows for targeted structural optimization of defective locations and provides a path to improving package performance.

[0080] The chip detection method includes the following steps before step S10:

[0081] The chip detection device is calibrated using a standard chip, thereby avoiding test errors caused by problems with the chip detection device.

[0082] Specifically, the step of calibrating the chip detection device using the standard chip includes:

[0083] Step S1. Install a standard chip onto a chip detection device, wherein the value of the standard polarization ratio A of the standard chip is a known value a; Step S2. Measure and calculate the value of the polarization ratio B of the standard chip using the chip detection device, which is b; Step S3. Adjust the optical path in the chip detection device according to b and a so that the difference between b and a is within the allowable accuracy range, and the standard polarization ratio A, polarization ratio B, and polarization ratio K are all polarization ratios of transverse electric mode light or polarization ratios of transverse magnetic mode light.

[0084] Based on the known standard polarization ratio A and the measured polarization ratio B, the optical path within the chip detection device can be adjusted to bring polarization ratio B closer to (or equal to) the standard polarization ratio A, thereby reducing system errors and making subsequent test values ​​closer to the true value. For example, before testing, the spatial position or orientation of polarization system 4 can be adjusted.

[0085] It should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the above embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A chip detection method, characterized in that: Including steps: Step S10. Acquire a near-field distribution image of the transverse electric mode light and a near-field distribution image of the transverse magnetic mode light emitted by the chip to be detected (2); Step S20. Calculating the value of the polarization ratio K of the chip to be detected (2) based on the near-field distribution image of the transverse electric mode light and the near-field distribution image of the transverse magnetic mode light, wherein the polarization ratio K is the polarization ratio of the transverse electric mode light or the transverse magnetic mode light; Step S30. Comparing the calculated polarization ratio K value with the standard range; When the value of the polarization ratio K is within the standard range, it is determined that the stress of the chip to be tested (2) is qualified; When the value of the polarization ratio K is not within the standard range, it is determined that the stress of the chip to be tested (2) is unqualified; Step S40: For the chip (2) to be tested that fails to meet the stress requirements, the defect position on the chip (2) to be tested that causes the stress failure is obtained based on the near-field distribution image of its transverse magnetic mode light.

2. The chip detection method according to claim 1, characterized in that: The region whose horizontal coordinates in the near-field distribution image of the transverse magnetic mode light correspond to the positions of the two ridge waveguides in the chip to be detected (2) has a first peak and a second peak, and the horizontal coordinates corresponding to the peak values ​​of the first peak and the second peak are x1 and x2 respectively; the region whose horizontal coordinates in the near-field distribution image of the transverse magnetic mode light correspond to the position of the injection region in the chip to be detected (2) forms a middle part, and the horizontal coordinates corresponding to the two ends of the middle part are x3 and x4 respectively, and x1<x3<x4<x2; In step S40, the step of obtaining the defect location on the chip that causes stress failure based on the near-field distribution image of the transverse magnetic mode light specifically includes: In the near-field distribution image of the transverse magnetic mode light, determining whether there is a peak in a portion with a horizontal coordinate between x1 and x3, or a portion with a horizontal coordinate between x4 and x2; When the peak exists, there is a problem with the ridge waveguide etching of the chip to be tested (2), resulting in unqualified stress; When there is no peak, there is no problem in etching the ridge waveguide of the chip to be tested (2).

3. The chip detection method according to claim 1, characterized in that: The region whose horizontal coordinate in the near-field distribution image of the transverse magnetic mode light corresponds to the position of the injection region in the chip to be detected (2) forms a middle portion; In step S40, the step of obtaining the defect location on the chip that causes stress failure based on the near-field distribution image of the transverse magnetic mode light specifically includes: comparing the peak intensity of the middle portion of the near-field distribution image of the transverse magnetic mode light with a first preset value; When the peak intensity of the middle portion is greater than or equal to the first preset value, the packaging of the chip to be tested (2) is poor, resulting in unqualified stress; When the peak intensity of the middle portion is less than the first preset value, the package of the chip to be tested (2) is good.

4. The chip detection method according to claim 1, characterized in that: In the step S10, a near-field distribution image of the transverse electric mode light and a near-field distribution image of the transverse magnetic mode light emitted by the chip (2) to be detected are simultaneously obtained.

5. The chip detection method according to claim 1, characterized in that: The chip detection method utilizes a chip detection device to detect the chip to be detected (2); The chip detection method includes the following steps before step S10: The chip detection device is calibrated using a standard chip.

6. The chip detection method according to claim 5, characterized in that: The step of calibrating the chip detection device using the standard chip specifically includes: Step S1. Installing a standard chip on a chip detection device, wherein the value of the standard polarization ratio A of the standard chip is a known value a; Step S2. The polarization ratio B of the standard chip is measured and calculated by the chip detection device, and the value is b; Step S3. Adjust the optical path in the chip detection device according to b and a so that the difference between b and a is within the allowable accuracy range, and the standard polarization ratio A, polarization ratio B and polarization ratio K are all polarization ratios of transverse electric mode light or transverse magnetic mode light.

7. The chip detection method according to claim 1, characterized in that: The chip detection method further includes the following steps before step S10: The temperature of the working environment of the chip to be detected (2) is adjusted so that the temperature of the working environment is within a preset temperature range.

8. A chip detection device, characterized in that: The chip detection device is used to implement the chip detection method according to any one of claims 1 to 7; The chip detection device includes: A sample stage (1) for fixing a chip to be tested (2); A zoom system (3) for zooming the light beam emitted by the chip to be detected (2); A polarization system (4), the polarization system (4) is used to separate the light beam into transverse electric mode light and transverse magnetic mode light, and emit the light beams to the image acquisition system; An image acquisition system, wherein the image acquisition system is used to acquire a near-field distribution image of transverse electric mode light and a near-field distribution image of transverse magnetic mode light; The chip detection device further comprises a controller, which is connected to the image acquisition system and calculates the value of the polarization ratio K of the chip to be detected (2) based on the near-field distribution image of the transverse electric mode light and the near-field distribution image of the transverse magnetic mode light, wherein the polarization ratio K is the polarization ratio of the transverse electric mode light or the transverse magnetic mode light; and compares the calculated value of the polarization ratio K with a standard range; when the value of the polarization ratio K is within the standard range, it is determined that the stress of the chip to be detected (2) is qualified; when the value of the polarization ratio K is not within the standard range, it is determined that the stress of the chip to be detected (2) is unqualified; for the chip to be detected (2) with unqualified stress, the defect position on the chip that causes the abnormal stress is obtained based on the near-field distribution image of its transverse magnetic mode light.

9. The chip detection device according to claim 8, characterized in that: The polarization system (4) is used to separate the light into transverse electric mode light and transverse magnetic mode light and emit them in different directions synchronously; The image acquisition system comprises a first acquisition module (51) and a second acquisition module (52), wherein the first acquisition module (51) and the second acquisition module (52) are respectively located in the emission direction of the transverse electric mode light and the emission direction of the transverse magnetic mode light; The first acquisition module (51) is used to acquire a near-field distribution image of transverse electric mode light, and the second acquisition module (52) is used to acquire a near-field distribution image of transverse magnetic mode light.

10. The chip detection device according to claim 9, characterized in that: The zoom system (3) comprises a main body and a plurality of lenses (31), wherein the lenses (31) are detachably connected to the main body so that one of the plurality of lenses (31) can be selectively connected to the main body; at least two of the lenses (31) have different focal lengths; and / or at least two of the lenses (31) have different magnifications; And / or, a temperature control mechanism is provided on the sample stage (1) for controlling the temperature of the sample stage (1).

Images