Microprocessor single-particle test method and system based on high-energy pulsed ion beam

Abstract

The present invention discloses a method and system for single-particle testing of microprocessors based on a high-energy pulsed ion beam. The method includes obtaining the dead time of a single-particle testing system during single-particle testing. The dead time of the single-particle testing refers to the time during which the single-particle testing system cannot record a single single-particle functional interruption event after capturing it. When performing a single-particle test on an integrated circuit under test, the dead time of the test system in the single-particle testing system is adjusted so that the beam-free time of the high-energy pulsed ion beam and the dead time of the single-particle testing system overlap, thereby preventing the single-particle functional interruption event from occurring during the dead time of the single-particle testing system, which would result in the single-particle testing system being unable to accurately identify the single-particle functional interruption event. The present invention aims to improve the accuracy of single-particle functional interruption (SEFI) events in single-particle testing of microprocessors based on a high-energy pulsed ion beam.

Description

Technical Field

[0001] The present invention relates to a microprocessor radiation resistance performance testing technology in the field of integrated circuits, and in particular to a microprocessor single particle testing method and system based on a high-energy pulsed ion beam. Background Art

[0002] A microprocessor single-event functional interruption test involves irradiating a microprocessor with a high-energy particle beam (such as a heavy ion beam or proton beam) in a radiation environment to investigate the phenomenon of microprocessor functional interruptions caused by single-event events. A single-event functional interruption (SEFI) occurs when a high-energy particle strikes a sensitive area of ​​the microprocessor, causing temporary or permanent loss of functionality without physical damage to the device. This interruption typically manifests as a program halt, the state machine entering an illegal state, or communication interruption. Existing microprocessor single-event functional interruption tests typically include the following steps: Equipment Preparation: Mounting the microprocessor on the test circuit board, connecting necessary power and signal lines, and ensuring the stability of the test environment. Initial Configuration: Initializing the microprocessor configuration, loading the test program or configuration file, and ensuring normal operation. Particle Beam Irradiation: Irradiating the microprocessor with a high-energy particle beam, with parameters such as particle type, energy, and fluence set. Functional Monitoring: During irradiation, real-time monitoring of the microprocessor's functional status, including program execution status, communication status, and output signals, is performed. Data Logging: Recording of functional interruption events during irradiation, including the time of occurrence, duration, and recovery status. End of the test: After the irradiation is completed, the particle beam is turned off, the microprocessor is subjected to a final status check, and the relevant data is recorded. However, when conducting a single-particle functional interruption test on a microprocessor, the single-particle test system requires a certain amount of detection time to detect the single-particle functional interruption SEFI. After detecting the single-particle functional interruption SEFI, the circuit will be reset and then the function will be restarted. If a second functional interruption occurs during the reset and restart of the single-particle detection system, the single-particle system will not be able to identify the second single-particle functional interruption SEFI, that is, there is a dead time in the single-particle test. The dead time of the single-particle test results in the inability to accurately record the detailed information of some single-particle functional interruption SEFI events in the existing test steps, resulting in insufficient accuracy. Summary of the Invention

[0003] Technical problem to be solved by the present invention: In view of the above-mentioned problems in the prior art, a microprocessor single-particle test method and system based on high-energy pulsed ion beam are provided. The present invention aims to improve the accuracy of single-particle functional interruption (SEFI) events in microprocessor single-particle tests based on high-energy pulsed ion beams.

[0004] In order to solve the above technical problems, the technical solution adopted by the present invention is:

[0005] A microprocessor single event test method based on a high-energy pulsed ion beam comprises the following steps:

[0006] S1, obtaining a dead time of a single-particle test system for a single-particle test, wherein the dead time of the single-particle test refers to a time during which the single-particle test system cannot record a single-particle functional interruption event after capturing a single single-particle functional interruption event;

[0007] S2. When performing a single-particle test on the integrated circuit being tested, the dead time of the test system in the single-particle test system is adjusted so that the beam-free time of the high-energy pulsed ion beam and the dead time of the single-particle test system overlap, so as to prevent the single-particle functional interruption event from occurring in the dead time of the single-particle test system, resulting in the single-particle test system being unable to accurately identify the single-particle functional interruption event.

[0008] Optionally, obtaining the dead time of the single particle test system for performing the single particle test in step S1 includes: capturing a single single particle function interruption event by the single particle test system, recording a time t1 when the single particle test system resets and restarts a circuit of the single particle test system after recording the single single particle function interruption event, and a time t2 when the single particle test system is ready after completing the circuit reset and restart, and subtracting the time t1 when the circuit is reset and restarted from the time t2 when the circuit is ready after completing the circuit reset and restart to obtain the dead time of the single particle test.

[0009] Optionally, in step S1, adjusting the dead time of the test system in the single-particle test system so that the beam-free time of the high-energy pulse ion beam and the dead time of the single-particle test system overlap includes: adjusting the length of the dead time of the test system in the single-particle test system so that the beam-free time of the high-energy pulse ion beam and the dead time of the single-particle test are the same length; adjusting the starting moment of the beam-free time of the high-energy pulse ion beam in the single-particle test system so that the starting moment of the high-energy pulse ion beam and the starting moment of the single-particle test are the same.

[0010] Optionally, the beam-free time of the high-energy pulsed ion beam refers to the non-pulse duration T2 other than the pulse duration T1 in the high-energy pulsed ion beam with a pulse period T, and the pulse period T is the sum of the pulse duration T1 and the non-pulse duration T2.

[0011] Optionally, the pulse period T is 12 seconds, the pulse duration T1 is 3 seconds, and the non-pulse duration T2 is 9 seconds.

[0012] Optionally, the integrated circuit tested in step S2 is a microprocessor.

[0013] In addition, the present invention also provides a microprocessor single particle test system based on a high-energy pulsed ion beam, comprising:

[0014] a dead time acquisition program unit, configured to acquire a dead time of a single-particle test system during a single-particle test, wherein the dead time of the single-particle test refers to a time during which the single-particle test system cannot record a single-particle function interruption event after capturing a single single-particle function interruption event;

[0015] The dead time control program unit is used to adjust the dead time of the test system in the single particle test system when performing a single particle test on the tested integrated circuit so that the beam-free time of the high-energy pulsed ion beam and the dead time of the single particle test system overlap, so as to prevent the single particle function interruption event from occurring in the dead time of the single particle test system, resulting in the single particle test system being unable to accurately identify the single particle function interruption event.

[0016] In addition, the present invention also provides a microprocessor single particle test system based on high energy pulsed ion beam, comprising a microprocessor and a memory connected to each other, wherein the microprocessor is programmed or configured to execute the microprocessor single particle test method based on high energy pulsed ion beam.

[0017] In addition, the present invention also provides a computer-readable storage medium, which stores a computer program or instruction. The computer program or instruction is programmed or configured to execute the microprocessor single particle test method based on high-energy pulsed ion beam through a processor.

[0018] In addition, the present invention also provides a computer program product, comprising a computer program or instructions, wherein the computer program or instructions are programmed or configured to execute the microprocessor single particle testing method based on high-energy pulsed ion beam through a processor.

[0019] Compared with the prior art, the present invention can mainly achieve the following beneficial effects: the method of the present invention includes obtaining the dead time of a single-particle test system for a single-particle test, wherein the dead time of the single-particle test refers to the time during which the single-particle test system cannot record a single-particle functional interruption event after capturing a single single-particle functional interruption event; when performing a single-particle test on the tested integrated circuit, the dead time of the test system in the single-particle test system is adjusted so that the beam-free time of the high-energy pulsed ion beam and the dead time of the single-particle test overlap, thereby preventing the single-particle functional interruption event from occurring in the dead time of the single-particle test system, resulting in the single-particle test system being unable to accurately identify the single-particle functional interruption event, thereby effectively improving the accuracy of the single-particle functional interruption SEFI event. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 Schematic diagram of the basic process of the method of the embodiment of the present invention.

[0021] Figure 2Schematic diagram of the process of obtaining the dead time of a single particle test in an embodiment of the present invention.

[0022] Figure 3 Schematic diagram of the beam-free time of a high-energy pulsed ion beam according to an embodiment of the present invention. DETAILED DESCRIPTION

[0023] The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0024] like Figure 1 As shown, the microprocessor single event test method based on high energy pulsed ion beam in this embodiment includes the following steps:

[0025] S1, obtaining a dead time of a single-particle test system for a single-particle test, wherein the dead time of the single-particle test refers to a time during which the single-particle test system cannot record a single-particle functional interruption event after capturing a single single-particle functional interruption event;

[0026] S2. When performing a single-particle test on the integrated circuit being tested, the dead time of the test system in the single-particle test system is adjusted so that the beam-free time of the high-energy pulsed ion beam and the dead time of the single-particle test system overlap, so as to prevent the single-particle functional interruption event from occurring in the dead time of the single-particle test system, resulting in the single-particle test system being unable to accurately identify the single-particle functional interruption event.

[0027] like Figure 2 As shown, in step S1 of this embodiment, obtaining the dead time of the single-particle test system for performing the single-particle test includes: capturing a single single-particle functional interruption event by the single-particle test system, recording the time t1 when the single-particle test system resets and restarts the circuit of the single-particle test system after recording the single single-particle functional interruption event, and the time t2 when the single-particle test system is ready after completing the circuit reset and restart, and subtracting the time t1 when the circuit is reset and restarted from the time t2 when the circuit is ready after completing the circuit reset and restart to obtain the dead time of the single-particle test.

[0028] In step S1 of this embodiment, adjusting the dead time of the test system in the single-particle test system so that the beam-free time of the high-energy pulse ion beam and the dead time of the single-particle test system overlap includes: adjusting the length of the dead time of the test system in the single-particle test system so that the beam-free time of the high-energy pulse ion beam and the dead time of the single-particle test are the same length; adjusting the starting moment of the beam-free time of the high-energy pulse ion beam in the single-particle test system so that the starting moment of the high-energy pulse ion beam and the starting moment of the single-particle test are the same.

[0029] like Figure 3As shown, the beam-free time of the high-energy pulsed ion beam in this embodiment refers to the non-pulsing duration T2 other than the pulse duration T1 in a high-energy pulsed ion beam with a pulse period T, where the pulse period T is the sum of the pulse duration T1 and the non-pulsing duration T2. ​​For example, as an optional embodiment, in this embodiment, the pulse period T is 12 seconds, the pulse duration T1 is 3 seconds, and the non-pulsing duration T2 is 9 seconds.

[0030] The tested integrated circuit may adopt a desired circuit type as required. For example, as an optional implementation, the tested integrated circuit in step S2 of this embodiment is a microprocessor.

[0031] In summary, when performing a microprocessor single-event functional interruption test, the single-event test system requires a certain amount of detection time to detect the SEFI. Upon detecting the SEFI, it resets the circuit and then restarts the function. If a second functional interruption occurs during the single-event detection system reset and restart, the single-event system will not be able to identify the second single-event functional interruption SEFI. This is the dead time of the single-event test. The microprocessor single-event test method based on a high-energy pulsed ion beam in this embodiment utilizes a period of no high-energy pulsed ion beam current. By overlapping the dead time with the period of no high-energy pulsed ion beam current, it can obtain relatively accurate SEFI data. This prevents the single-event functional interruption event from occurring during the dead time of the single-event test system, which can cause the single-event test system to be unable to accurately identify the single-event functional interruption event, thereby effectively improving the accuracy of single-event functional interruption SEFI events.

[0032] In addition, this embodiment also provides a microprocessor single particle testing system based on a high-energy pulsed ion beam, comprising:

[0033] a dead time acquisition program unit, configured to acquire a dead time of a single-particle test system during a single-particle test, wherein the dead time of the single-particle test refers to a time during which the single-particle test system cannot record a single-particle function interruption event after capturing a single single-particle function interruption event;

[0034] The dead time control program unit is used to adjust the dead time of the test system in the single particle test system when performing a single particle test on the tested integrated circuit so that the beam-free time of the high-energy pulsed ion beam and the dead time of the single particle test system overlap, so as to prevent the single particle function interruption event from occurring in the dead time of the single particle test system, resulting in the single particle test system being unable to accurately identify the single particle function interruption event.

[0035] In addition, this embodiment also provides a microprocessor single particle test system based on high energy pulsed ion beam, including a microprocessor and a memory connected to each other, wherein the microprocessor is programmed or configured to execute the microprocessor single particle test method based on high energy pulsed ion beam.

[0036] In addition, this embodiment also provides a computer-readable storage medium, which stores a computer program or instruction. The computer program or instruction is programmed or configured to execute the microprocessor single particle test method based on high-energy pulsed ion beam through a processor.

[0037] In addition, this embodiment also provides a computer program product, including a computer program or instructions, which are programmed or configured to execute the microprocessor single particle testing method based on high-energy pulsed ion beam through a processor.

[0038] The above description is merely a preferred embodiment of the present invention. The scope of protection of the present invention is not limited to the above embodiment. All technical solutions based on the concept of the present invention are within the scope of protection of the present invention. It should be noted that for those skilled in the art, various improvements and modifications that do not depart from the principles of the present invention should also be considered within the scope of protection of the present invention.

Claims

1. A microprocessor single-particle test method based on high-energy pulsed ion beam, characterized in that: The steps include: S1, obtaining a dead time of a single-particle test system for a single-particle test, wherein the dead time of the single-particle test refers to a time during which the single-particle test system cannot record a single-particle functional interruption event after capturing a single single-particle functional interruption event; S2. When performing a single-particle test on the integrated circuit being tested, the dead time of the test system in the single-particle test system is adjusted so that the beam-free time of the high-energy pulsed ion beam and the dead time of the single-particle test system overlap, so as to prevent the single-particle functional interruption event from occurring in the dead time of the single-particle test system, resulting in the single-particle test system being unable to accurately identify the single-particle functional interruption event.

2. The microprocessor single event test method based on high energy pulsed ion beam according to claim 1, characterized in that: Obtaining the dead time of the single particle test system for performing the single particle test in step S1 includes: capturing a single single particle functional interruption event by the single particle test system, recording a time t1 when the single particle test system resets and restarts a circuit of the single particle test system after recording the single single particle functional interruption event, and a time t2 when the single particle test system is ready after completing the circuit reset and restart, and subtracting the time t1 when the circuit is reset and restarted from the time t2 when the circuit is ready after completing the circuit reset and restart to obtain the dead time of the single particle test.

3. The microprocessor single event test method based on high energy pulsed ion beam according to claim 1, characterized in that: Adjusting the dead time of the test system in the single-particle test system in step S1 so that the beam-free time of the high-energy pulse ion beam and the dead time of the single-particle test system overlap includes: adjusting the length of the dead time of the test system in the single-particle test system so that the beam-free time of the high-energy pulse ion beam and the dead time of the single-particle test are the same in length; adjusting the starting moment of the beam-free time of the high-energy pulse ion beam in the single-particle test system so that the starting moment of the high-energy pulse ion beam and the starting moment of the single-particle test are the same.

4. The microprocessor single event test method based on high energy pulsed ion beam according to claim 1, characterized in that: The beam-free time of the high-energy pulsed ion beam refers to the non-pulse duration T2 other than the pulse duration T1 in the high-energy pulsed ion beam with a pulse period T, and the pulse period T is the sum of the pulse duration T1 and the non-pulse duration T2.

5. The microprocessor single event test method based on high energy pulsed ion beam according to claim 4, characterized in that: The pulse period T is 12 seconds, the pulse duration T1 is 3 seconds, and the non-pulse duration T2 is 9 seconds.

6. The microprocessor single event test method based on high energy pulsed ion beam according to claim 1, characterized in that: The integrated circuit tested in step S2 is a microprocessor.

7. A microprocessor single particle test system based on high energy pulsed ion beam, characterized in that: include: a dead time acquisition program unit, configured to acquire a dead time of a single-particle test system during a single-particle test, wherein the dead time of the single-particle test refers to a time during which the single-particle test system cannot record a single-particle function interruption event after capturing a single single-particle function interruption event; The dead time control program unit is used to adjust the dead time of the test system in the single particle test system when performing a single particle test on the tested integrated circuit so that the beam-free time of the high-energy pulsed ion beam and the dead time of the single particle test system overlap, so as to prevent the single particle function interruption event from occurring in the dead time of the single particle test system, resulting in the single particle test system being unable to accurately identify the single particle function interruption event.

8. A microprocessor single particle test system based on a high energy pulsed ion beam, comprising a microprocessor and a memory connected to each other, characterized in that: The microprocessor is programmed or configured to execute the microprocessor single particle testing method based on high-energy pulsed ion beam according to any one of claims 1 to 6.

9. A computer-readable storage medium having a computer program or instruction stored therein, characterized in that: The computer program or instruction is programmed or configured to execute the microprocessor single particle testing method based on high-energy pulsed ion beam according to any one of claims 1 to 6 through a processor.

10. A computer program product comprising a computer program or instructions, characterized in that The computer program or instruction is programmed or configured to execute the microprocessor single particle testing method based on high-energy pulsed ion beam according to any one of claims 1 to 6 through a processor.

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