Lead-based perovskite photoelectric thin film transistor and preparation method thereof

Abstract

The invention relates to a lead-based perovskite photoelectric thin film transistor and a preparation method thereof, the lead-based perovskite photoelectric thin film transistor comprises a substrate, a dielectric layer, a functional layer, a lead-based perovskite thin film layer and an electrode layer which are stacked, and the functional layer is prepared from a polyamide-amino hyperbranched polymer or a derivative thereof. On one hand, entanglement of polymer chains and molecular inner cavities of the polyamide-amido hyperbranched polymer or the derivative of the polyamide-amido hyperbranched polymer is little, more lead ion adsorption sites can be exposed, and therefore lead leakage is reduced; the strong hydrogen bond group and hydrophobic polymer chain of the polyamide-amido hyperbranched polymer or the derivative thereof can block water molecules in the material, water is prevented from permeating into the perovskite thin film, degradation of the perovskite thin film is indirectly prevented by improving the hydrophobicity of the transistor, and the stability of the transistor is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of neuromorphic devices, and in particular to a lead-based perovskite photoelectric thin-film transistor and a preparation method thereof. Background Art

[0002] Lead-based perovskite thin-film transistors (TFTs) hold great promise for applications in solar cells, light-emitting diodes, photodetectors, and X-ray detectors. However, these materials face challenges in practical applications, including poor stability and lead toxicity. Specifically, lead-based perovskites are susceptible to degradation under environmental conditions, especially in the presence of moisture, leading to decreased device performance. Furthermore, lead, a toxic heavy metal, raises concerns about environmental and human health, particularly regarding lead leakage.

[0003] To address these issues, common approaches include using simple encapsulation techniques, adding organic or inorganic additives, changing the chemical composition of perovskites, and physical isolation techniques. However, these approaches often have limitations, such as being unable to effectively prevent moisture penetration, increasing manufacturing costs and complexity, reducing the optoelectronic performance of the device, or affecting its flexibility and wearability.

[0004] Therefore, it is particularly urgent to develop a new technical solution that can not only improve the stability of lead-based perovskite thin-film transistors but also effectively prevent lead leakage. Summary of the Invention

[0005] In order to solve the above technical problems, the present application provides a lead-based perovskite photoelectric thin film transistor and a preparation method thereof.

[0006] To achieve the above objectives, this application is implemented through the following technical solutions:

[0007] The present application provides a lead-based perovskite photoelectric thin-film transistor, comprising a stacked substrate, a dielectric layer, a functional layer, a lead-based perovskite thin-film layer, and an electrode layer, wherein the functional layer is prepared from a polyamide-amine hyperbranched polymer or a derivative thereof.

[0008] As a further improvement of the present application, the functional layer is prepared from epoxy-modified polyamide-amine based hyperbranched polymer.

[0009] As a further improvement of the present application, the functional layer is prepared from a polyamide-amine hyperbranched polymer modified with a fluorine-containing functional group.

[0010] As a further improvement of the present application, the dielectric layer is made of any one of the following materials: silicon dioxide, aluminum oxide.

[0011] As a further improvement of the present application, the lead-based perovskite thin film layer is prepared from a material with an ABX3 structure, wherein: A is at least one of CH3NH3, NH2CH=NH2, CH3CH2NH3, B is Pb, and X is any one of Cl, Br, and I.

[0012] As a further improvement of the present application, the substrate is a heavily doped silicon substrate, and the material used to prepare the electrode layer can be any one of Au, Ag, Cu, and Al.

[0013] As a further improvement of the present application, the polyamide-amine based hyperbranched polymer is prepared by the following steps:

[0014] A1. Fully dissolving 4,4'-diaminodiphenylmethane in methanol at room temperature to obtain a first mixed solution;

[0015] A2, slowly adding methyl acrylate to the first mixed solution, stirring and reacting for a first preset time after the addition is completed, to obtain a second mixture, and then adding ethylenediamine and methyl acrylate to the second mixture, stirring and reacting at room temperature for a second preset time to obtain a third mixed solution;

[0016] A3, removing methanol from the third mixed solution by distillation under reduced pressure, and then performing a gradient temperature reaction under reduced pressure, wherein the specific temperature increase process is: 60° C. for 1 hour, 80° C. for 1 hour, 100° C. for 2 hours, 120° C. for 2 hours, and 140° C. for 2 hours;

[0017] A4. After the reaction is completed, the mixture is naturally cooled to room temperature, precipitated with ether, and then vacuum dried to obtain a bright yellow product, which is a polyamide-amino hyperbranched polymer.

[0018] As a further improvement of the present application, the specific steps of epoxy-modifying the polyamide-amine hyperbranched polymer are as follows: dissolving the polyamide-amine hyperbranched polymer in tetrahydrofuran to form a uniform solution, then adding an appropriate amount of 3-glycidyloxypropyltrimethoxysilane to the solution, stirring and reacting in an oil bath at 55°C to 65°C under a nitrogen atmosphere, after the reaction is completed, cooling the solution to room temperature, and removing the solvent by rotary evaporation to obtain an epoxy-modified polyamide-amine hyperbranched polymer.

[0019] As a further improvement of the present application, the specific steps of modifying the polyamide-amine hyperbranched polymer with fluorine-containing functional groups are as follows: under a nitrogen protective atmosphere, the polyamide-amino hyperbranched polymer and a trifluoromethyl compound are dissolved in anhydrous ethanol, the temperature is raised to 80°C, the reaction is fully stirred, and the reaction is cooled to room temperature. The insoluble matter is removed by filtration, and extraction is performed to obtain a fluorine-containing functional group-modified polyamide-amine hyperbranched polymer.

[0020] To achieve the above objectives, the present application also provides a method for preparing the above-mentioned lead-based perovskite photoelectric thin film transistor, comprising the following steps:

[0021] S1. Place the substrate in deionized water, ethanol, isopropanol, and deionized water in sequence for ultrasonic cleaning, wherein the substrate is any one of ITO glass and silicon wafer;

[0022] S2, performing ultraviolet-ozone or plasma treatment on the substrate;

[0023] S3, preparing a dielectric layer on the substrate;

[0024] S4, dissolving a polyamide-amino hyperbranched polymer or a derivative thereof in an organic solvent to form a polyamide-amino hyperbranched polymer mixed solution, spin-coating the mixed solution onto the dielectric layer by a spin coating method, and annealing to obtain a functional layer;

[0025] S5. Sequentially prepare a lead-based perovskite thin film layer and an electrode layer on the functional layer.

[0026] The beneficial effect of the present application is that the present application provides a novel lead-based perovskite thin-film transistor, which adds a functional layer between the dielectric layer and the lead-based perovskite thin-film layer, and the functional layer is prepared from polyamide-amine hyperbranched polymers (HBPs) or derivatives thereof. The polymer chains of the polyamide-amine hyperbranched polymers or derivatives thereof are less entangled with the molecular cavity, which can expose more lead ion adsorption sites, thereby reducing lead leakage. On the other hand, the strong hydrogen bonding groups and hydrophobic polymer chains of the polyamide-amine hyperbranched polymers or derivatives thereof can block water molecules inside the material, preventing water from penetrating into the perovskite film. By improving the hydrophobicity of the transistor, the degradation of the perovskite film is indirectly prevented, thereby improving the stability of the transistor. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 It is a schematic structural diagram of the lead-based perovskite photoelectric thin film transistor of the present application.

[0028] In the figure: 1. Substrate; 2. Dielectric layer; 3. Functional layer; 4. Lead-based perovskite thin film layer; 5. Electrode layer. DETAILED DESCRIPTION

[0029] The following will be combined with the embodiments of the present application to clearly and completely describe the technical solutions of the present application. Obviously, the embodiments described are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments of the present application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0030] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the present application is further described in detail below in conjunction with specific implementation methods.

[0031] In order to solve the technical problem of lead leakage of lead-based perovskite thin film transistors, the present application also provides a lead-based perovskite photoelectric thin film transistor, such as Figure 1 As shown, it includes a stacked substrate 1, a dielectric layer 2, a functional layer 3, a lead-based perovskite film layer 4, and an electrode layer 5, wherein the functional layer 3 is prepared from a polyamide-amine hyperbranched polymer or a derivative thereof.

[0032] Based on the above technical solution: the polymer chains of polyamide-amine hyperbranched polymers or their derivatives are less entangled with the molecular cavities, which can expose more lead ion adsorption sites, thereby reducing lead leakage. On the other hand, the strong hydrogen bond groups and hydrophobic polymer chains of polyamide-amine hyperbranched polymers or their derivatives can block water molecules inside the material, preventing water from penetrating into the perovskite film, and indirectly preventing the degradation of the perovskite film by improving the hydrophobicity of the transistor, thereby improving the stability of the transistor.

[0033] In an optional embodiment, the functional layer 3 is made of an epoxy-modified polyamide-amine hyperbranched polymer. The epoxy-modified polyamide-amine hyperbranched polymer can form stronger chemical bonds with the dielectric layer 2 and the perovskite layer, such as the epoxy-modified HBPs forming covalent bonds with the hydroxyl groups in the dielectric layer 2, thereby enhancing interfacial interactions and further improving device stability and charge transfer efficiency.

[0034] In an optional embodiment, the functional layer 3 is prepared from a polyamide-amine hyperbranched polymer modified with fluorinated functional groups. The introduction of fluorinated functional groups improves the hydrophobicity and chemical stability of the polyamide-amine hyperbranched polymer, reducing water erosion of the perovskite layer, thereby improving the stability of the device in high-humidity environments. Furthermore, the fluorinated functional group-modified HBPs enhance their binding to the perovskite layer through hydrogen bonding and other interactions, firmly confining lead ions within the interface structure and preventing migration and leakage.

[0035] In an optional embodiment, the dielectric layer 2 is made of any one of the following materials: silicon dioxide or aluminum oxide. Silicon dioxide and aluminum oxide, as materials for the dielectric layer 2, have excellent insulation properties and chemical stability, can effectively block charge leakage, and improve the electrical performance and reliability of the device.

[0036] In an optional embodiment, the lead-based perovskite thin film layer 4 is made of an ABX3 structured material, wherein: A is at least one of CH3NH3, NH2CH=NH2, and CH3CH2NH3; B is Pb; and X is any one of Cl, Br, and I. The ABX3 structured perovskite material has excellent photoelectric properties, such as high carrier mobility and long carrier lifetime, and can improve the photoelectric conversion efficiency and response speed of the device.

[0037] In an optional embodiment, the substrate 1 is a heavily doped silicon substrate 1, and the material for preparing the electrode layer 5 can be any one of Au, Ag, Cu, and Al. The heavily doped silicon substrate 1 has good thermal conductivity and mechanical stability, and the electrode materials such as Au, Ag, Cu, and Al have good electrical conductivity and chemical stability, which can improve the electrical performance and reliability of the device.

[0038] In an optional embodiment, the polyamide-amine based hyperbranched polymer is prepared by the following steps:

[0039] A1. Fully dissolving 4,4'-diaminodiphenylmethane in methanol at room temperature to obtain a first mixed solution;

[0040] A2, slowly adding methyl acrylate to the first mixed solution, stirring and reacting for a first preset time after the addition is completed, to obtain a second mixture, and then adding ethylenediamine and methyl acrylate to the second mixture, stirring and reacting at room temperature for a second preset time to obtain a third mixed solution;

[0041] A3, removing methanol from the third mixed solution by distillation under reduced pressure, and then performing a gradient temperature reaction under reduced pressure, wherein the specific temperature increase process is: 60° C. for 1 hour, 80° C. for 1 hour, 100° C. for 2 hours, 120° C. for 2 hours, and 140° C. for 2 hours;

[0042] A4. After the reaction is completed, the mixture is naturally cooled to room temperature, precipitated with ether, and then vacuum dried to obtain a bright yellow product, which is a polyamide-amino hyperbranched polymer.

[0043] In an optional embodiment, the specific steps of epoxy-modifying the polyamide-amine hyperbranched polymer are as follows: dissolving the polyamide-amine hyperbranched polymer in tetrahydrofuran to form a uniform solution, then adding an appropriate amount of 3-glycidyloxypropyltrimethoxysilane to the solution, stirring and reacting in an oil bath at 55°C to 65°C under a nitrogen atmosphere, cooling the solution to room temperature after the reaction, and removing the solvent by rotary evaporation to obtain an epoxy-modified polyamide-amine hyperbranched polymer. Preferably, the concentration of the polyamide-amine hyperbranched polymer in tetrahydrofuran is 0.1g / ml to 0.2g / ml, and the molar ratio of 3-glycidyloxypropyltrimethoxysilane to the polyamide-amine hyperbranched polymer is 1 to 2.

[0044] In an optional embodiment, the specific steps of modifying the polyamide-amine hyperbranched polymer with fluorine-containing functional groups are as follows: under a nitrogen atmosphere, dissolving the polyamide-amine hyperbranched polymer and a trifluoromethyl compound in anhydrous ethanol, heating to 80° C., stirring thoroughly to react, cooling to room temperature, filtering to remove insoluble matter, and extracting to obtain a polyamide-amine hyperbranched polymer modified with fluorine-containing functional groups. Preferably, the concentration of the polyamide-amino hyperbranched polymer in anhydrous ethanol is 0.2 g / ml, the molar ratio of the polyamide-amino hyperbranched polymer to the trifluoromethyl compound is 1:2, and the grafting rate of the fluorine-containing functional groups is 10% to 20%.

[0045] To achieve the above objectives, the present application also provides a method for preparing the above-mentioned lead-based perovskite photoelectric thin film transistor, comprising the following steps:

[0046] S1, placing the substrate 1 in deionized water, ethanol, isopropanol, and deionized water in sequence for ultrasonic cleaning, wherein the substrate 1 is any one of ITO glass and silicon wafer;

[0047] S2, performing ultraviolet-ozone or plasma treatment on the substrate 1;

[0048] S3, preparing a dielectric layer 2 on the substrate 1;

[0049] S4, dissolving a polyamide-amino hyperbranched polymer or a derivative thereof in an organic solvent to form a polyamide-amino hyperbranched polymer mixed solution, spin-coating the mixed solution onto the dielectric layer 2 by a spin coating method, and annealing to obtain a functional layer 3;

[0050] S5. Prepare a lead-based perovskite thin film layer 4 and an electrode layer 5 on the functional layer 3 in sequence.

[0051] In an optional embodiment, the thickness of each layer of the lead-based perovskite photoelectric thin film transistor is as follows: the thickness of the dielectric layer 2 is 30nm to 100nm, the thickness of the functional layer 3 is 5nm to 20nm, the thickness of the lead-based perovskite thin film layer 4 is 100nm to 500nm, and the thickness of the electrode layer 5 is 50nm to 150nm.

[0052] In order to verify that the technical solution of this application has excellent effects, this application also provides the following examples:

[0053] Example 1

[0054] This embodiment provides a polyamide-amine based hyperbranched polymer and a preparation method thereof, and the specific steps are as follows:

[0055] First, at room temperature (25°C), 20 g of 4,4'-diaminodiphenylmethane was fully dissolved in 200 ml of methanol and stirred at 300 rpm to obtain a first mixed solution.

[0056] A2, 15g of methyl acrylate was slowly added dropwise to the first mixed solution at a rate of addition of 5ml / min. After the addition was completed, the mixture was stirred for a first preset time to obtain a second mixture. 10g of ethylenediamine and 15g of methyl acrylate were added to the second mixture, and the mixture was stirred for a second preset time at room temperature (25°C) at a stirring speed of 400rpm to obtain a third mixed solution.

[0057] A3, the methanol in the third mixed solution was removed by vacuum distillation, the vacuum degree was -0.09 MPa, the distillation temperature was 60 ° C, until no fraction was distilled out, and then a gradient temperature reaction was carried out under reduced pressure. The specific heating process was: 60 ° C for 1 hour, 80 ° C for 1 hour, 100 ° C for 2 hours, 120 ° C for 2 hours, and 140 ° C for 2 hours;

[0058] A4. After the reaction is completed, the mixture is naturally cooled to room temperature (25°C), precipitated with ether, and then vacuum dried with a vacuum degree of -0.08 MPa, a drying temperature of 50°C, and a drying time of 12 hours to obtain a bright yellow product, which is a polyamide-amino hyperbranched polymer.

[0059] Example 2

[0060] This embodiment provides an epoxy-modified polyamide-amine hyperbranched polymer and a preparation method thereof, and the specific steps are as follows:

[0061] 8 g of polyamide-amino hyperbranched polymer was dissolved in 60 ml of tetrahydrofuran to form a homogeneous solution. 40 g of 3-glycidyloxypropyltrimethoxysilane was then added to the solution. The mixture was stirred in an oil bath at 60° C. under a nitrogen atmosphere for 12 h. The epoxy groups in KH560 reacted with the amino end groups in the polyamide-amino hyperbranched polymer to form covalently bonded epoxy groups. After the reaction, the solution was cooled to room temperature and the solvent was removed by rotary evaporation to obtain an epoxy-modified polyamide-amine hyperbranched polymer.

[0062] Example 3

[0063] This embodiment provides a fluorine-containing functional group modified polyamide-amine hyperbranched polymer and a preparation method thereof, and the specific steps are as follows:

[0064] Under a nitrogen atmosphere, 8 g of a polyamide-amino hyperbranched polymer and 2.4 g of a trifluoromethyl compound were dissolved in 40 ml of anhydrous ethanol. The temperature was raised to 80°C, and the mixture was stirred thoroughly for reaction. The mixture was cooled to room temperature, filtered to remove insoluble matter, and extracted to obtain a fluorine-containing functional group-modified polyamide-amine hyperbranched polymer. The grafting rate of the fluorine-containing functional group was 15.2%.

[0065] Example 4

[0066] This embodiment provides a lead-based perovskite photoelectric thin film transistor and a preparation method thereof. The specific steps of the preparation method are as follows:

[0067] S1. Place the ITO glass in deionized water, ethanol, isopropanol, and deionized water in sequence for ultrasonic cleaning;

[0068] S2, performing plasma treatment on the ITO glass;

[0069] S3, dissolving aluminum oxide in deionized water to prepare an aluminum oxide aqueous solution with a concentration of 0.2 mol / L, and coating the aluminum oxide aqueous solution on the ITO glass by spin coating at a substrate speed of 4000 rpm for 30 seconds, and annealing at 300° C. for 1 hour to obtain a dielectric layer with a thickness of 60 nm;

[0070] S4, dissolving the polyamide-amino hyperbranched polymer of Example 1 in an organic solvent of N,N-dimethylformamide (DMF) to form a polyamide-amino hyperbranched polymer mixed solution, and spin-coating the mixed solution onto the dielectric layer by a spin coating method at a substrate speed of 4000 rpm for 30 seconds, and annealing for 8 minutes to obtain a functional layer having a thickness of 14 nm;

[0071] S5. Prepare a lead-based perovskite thin film on the functional layer: Using FAPbI3 solution as an example, accurately weigh FAI and PbI2 at a molar ratio of 1:1, then dissolve it in a DMF:DMSO mixed solvent at a concentration of 2 mol / ml. Once the powder is completely dissolved, spin-coat it on the functional layer at 4000 rpm for approximately 30 seconds and anneal it at 100°C to 150°C for 20 minutes. The thickness of the lead-based perovskite thin film is 300 nm. The entire weighing, spin-coating, and annealing process must be performed in a nitrogen glove box.

[0072] S6. Prepare an electrode layer on the lead-based perovskite film layer: deposit metal electrodes such as Al, Ag, and Ti with a thickness of 100 nm on the top and bottom of the device by thermal evaporation or magnetron sputtering.

[0073] Example 5

[0074] This embodiment provides a lead-based perovskite photoelectric thin film transistor and a preparation method thereof. The specific steps of the preparation method are as follows:

[0075] S1. Place the ITO glass in deionized water, ethanol, isopropanol, and deionized water in sequence for ultrasonic cleaning;

[0076] S2, performing plasma treatment on the ITO glass;

[0077] S3, dissolving aluminum oxide in deionized water to prepare an aluminum oxide aqueous solution with a concentration of 0.1 mol / L, and coating the aluminum oxide aqueous solution on the ITO glass by spin coating at a substrate speed of 4000 rpm for 30 seconds, and annealing at 200° C. for 30 minutes to obtain a dielectric layer with a thickness of 30 nm;

[0078] S4, dissolving the polyamide-amino hyperbranched polymer of Example 2 in an organic solvent of N,N-dimethylformamide (DMF) to form a polyamide-amino hyperbranched polymer mixed solution, and spin-coating the mixed solution onto the dielectric layer by a spin coating method at a substrate speed of 4000 rpm for 30 seconds, and annealing for 5 minutes to obtain a functional layer having a thickness of 5 nm;

[0079] S5. Prepare a lead-based perovskite thin film on the functional layer: Using FAPbI3 solution as an example, accurately weigh FAI and PbI2 at a molar ratio of 1:1, then dissolve it in a DMF:DMSO mixed solvent at a concentration of 1 mol / ml. Once the powder is completely dissolved, spin-coat it on the functional layer at 3000 rpm for approximately 30 seconds. Anneal it at 100°C to 150°C for 10 minutes, achieving a thickness of 100 nm. The entire weighing, spin-coating, and annealing process must be performed in a nitrogen glove box.

[0080] S6. Prepare an electrode layer on the lead-based perovskite film layer: deposit metal electrodes such as Al, Ag, and Ti with a thickness of 50 nm on the top and bottom of the device by thermal evaporation or magnetron sputtering.

[0081] Example 6

[0082] This embodiment provides a lead-based perovskite photoelectric thin film transistor and a preparation method thereof. The specific steps of the preparation method are as follows:

[0083] S1. Place the ITO glass in deionized water, ethanol, isopropanol, and deionized water in sequence for ultrasonic cleaning;

[0084] S2, performing plasma treatment on the ITO glass;

[0085] S3, dissolving aluminum oxide in deionized water to prepare an aluminum oxide aqueous solution with a concentration of 0.3 mol / L, and coating the aluminum oxide aqueous solution on the ITO glass by spin coating at a substrate speed of 4000 rpm for 30 seconds, and annealing at 400° C. for 3 hours to obtain a dielectric layer with a thickness of 100 nm;

[0086] S4, dissolving the polyamide-amino hyperbranched polymer of Example 3 in an organic solvent of N,N-dimethylformamide (DMF) to form a polyamide-amino hyperbranched polymer mixed solution, and spin-coating the mixed solution onto the dielectric layer by a spin coating method at a substrate speed of 4000 rpm for 30 seconds, and annealing for 10 minutes to obtain a functional layer having a thickness of 20 nm;

[0087] S5. Prepare a lead-based perovskite thin film on the functional layer: Using FAPbI3 solution as an example, accurately weigh FAI and PbI2 at a molar ratio of 1:1, then dissolve it in a DMF:DMSO mixed solvent at a concentration of 3 mol / ml. Once the powder is completely dissolved, spin-coat it on the functional layer at 5000 rpm for approximately 30 seconds and anneal it at 100°C to 150°C for 30 minutes. The thickness of the lead-based perovskite thin film is 500 nm. The entire weighing, spin-coating, and annealing process must be performed in a nitrogen glove box.

[0088] S6. Prepare an electrode layer on the lead-based perovskite film layer: deposit metal electrodes such as Al, Ag, and Ti with a thickness of 150 nm on the top and bottom of the device by thermal evaporation or magnetron sputtering.

[0089] Comparative Example 1

[0090] The difference between this comparative example and Example 4 is that no functional layer is prepared.

[0091] The lead-based perovskite photoelectric thin-film transistors prepared in Examples 4-6 and Comparative Example 1 were placed in an environment with a relative humidity of 50%. After 12 hours, samples of the thin-film transistor surface were collected and X-ray photoelectron spectroscopy (XPS) was used to observe the surface and cross-sectional morphology of the devices and to examine the distribution of lead ions. The spectrum of Comparative Example 1 showed a clear Pb absorption peak, indicating that the transistor was experiencing lead leakage. However, the Pb absorption peak intensity was significantly reduced in the spectrum of Examples 4-6, indicating that lead leakage in the transistors was significantly suppressed.

[0092] Although this specification is described according to implementation methods, not every implementation method contains only one independent technical solution. This narrative method of the specification is only for the sake of clarity. Those skilled in the art should regard the specification as a whole. The technical solutions in each implementation method can also be appropriately combined to form other implementation methods that can be understood by those skilled in the art.

[0093] The series of detailed descriptions listed above are only specific descriptions of feasible implementation methods of this application. They are not intended to limit the scope of protection of this application. Any equivalent implementation methods or changes that do not deviate from the technical spirit of this application should be included in the scope of protection of this application.

Claims

1. A lead-based perovskite photoelectric thin film transistor, characterized in that: The invention comprises a stacked substrate, a dielectric layer, a functional layer, a lead-based perovskite film layer, and an electrode layer, wherein the functional layer is prepared from a polyamide-amine hyperbranched polymer or a derivative thereof.

2. The lead-based perovskite photoelectric thin film transistor according to claim 1, characterized in that: The functional layer is prepared from epoxy-modified polyamide-amine hyperbranched polymer.

3. The lead-based perovskite photoelectric thin film transistor according to claim 1, characterized in that: The functional layer is prepared from a polyamide-amine hyperbranched polymer modified with a fluorine-containing functional group.

4. The lead-based perovskite photoelectric thin film transistor according to claim 1, characterized in that: The dielectric layer is made of any one of the following materials: silicon dioxide and aluminum oxide.

5. The lead-based perovskite photoelectric thin film transistor according to claim 1, characterized in that: The lead-based perovskite thin film layer is prepared from a material with an ABX3 structure, wherein: A is at least one of CH3NH3, NH2CH=NH2, CH3CH2NH3, B is Pb, and X is any one of Cl, Br, and I.

6. The lead-based perovskite photoelectric thin film transistor according to claim 1, characterized in that: The substrate is a heavily doped silicon substrate, and the material used to prepare the electrode layer can be any one of Au, Ag, Cu, and Al.

7. The lead-based perovskite photoelectric thin film transistor according to claim 1, characterized in that: The polyamide-amine hyperbranched polymer is prepared by the following steps: A1. Fully dissolving 4,4'-diaminodiphenylmethane in methanol at room temperature to obtain a first mixed solution; A2, slowly adding methyl acrylate to the first mixed solution, stirring and reacting for a first preset time after the addition is completed, to obtain a second mixture, and then adding ethylenediamine and methyl acrylate to the second mixture, stirring and reacting at room temperature for a second preset time to obtain a third mixed solution; A3, removing methanol from the third mixed solution by distillation under reduced pressure, and then performing a gradient temperature reaction under reduced pressure, wherein the specific temperature increase process is: 60° C. for 1 hour, 80° C. for 1 hour, 100° C. for 2 hours, 120° C. for 2 hours, and 140° C. for 2 hours; A4. After the reaction is completed, the mixture is naturally cooled to room temperature, precipitated with ether, and then vacuum dried to obtain a bright yellow product, which is a polyamide-amino hyperbranched polymer.

8. The lead-based perovskite photoelectric thin film transistor according to claim 7, characterized in that: The specific steps of epoxy-modifying the polyamide-amine hyperbranched polymer are as follows: dissolving the polyamide-amine hyperbranched polymer in tetrahydrofuran to form a uniform solution, then adding an appropriate amount of 3-glycidyloxypropyltrimethoxysilane to the solution, stirring and reacting in an oil bath at 55° C. to 65° C. under a nitrogen atmosphere, cooling the solution to room temperature after the reaction, and removing the solvent by rotary evaporation to obtain the epoxy-modified polyamide-amine hyperbranched polymer.

9. The lead-based perovskite photoelectric thin film transistor according to claim 7, characterized in that: The specific steps of modifying the polyamide-amine hyperbranched polymer with fluorine-containing functional groups are as follows: under a nitrogen protection atmosphere, dissolving the polyamide-amine hyperbranched polymer and a trifluoromethyl compound in anhydrous ethanol, heating to 80° C., stirring thoroughly for reaction, cooling to room temperature, filtering to remove insoluble matter, and extracting to obtain a fluorine-containing functional group-modified polyamide-amine hyperbranched polymer.

10. A method for preparing a lead-based perovskite photoelectric thin film transistor according to any one of claims 1 to 9, characterized in that: The steps include: S1. Place the substrate in deionized water, ethanol, isopropanol, and deionized water in sequence for ultrasonic cleaning, wherein the substrate is any one of ITO glass and silicon wafer; S2, performing ultraviolet-ozone or plasma treatment on the substrate; S3, preparing a dielectric layer on the substrate; S4, dissolving a polyamide-amino hyperbranched polymer or a derivative thereof in an organic solvent to form a polyamide-amino hyperbranched polymer mixed solution, spin-coating the mixed solution onto the dielectric layer by a spin coating method, and annealing to obtain a functional layer; S5. Sequentially prepare a lead-based perovskite thin film layer and an electrode layer on the functional layer.

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