Display device

Abstract

A display device may include a substrate including a non-display area including a through hole and a display area surrounding the non-display area; a dam-shaped object, wherein the dam-shaped object surrounds the through hole; a first hydrogen barrier layer, the first hydrogen barrier layer surrounding the dam; the first planarization layer is arranged on the first hydrogen barrier layer; a second hydrogen barrier layer, the second hydrogen barrier layer surrounding the dam, the second hydrogen barrier layer disposed on the first planarization layer and overlapping at least a portion of the first hydrogen barrier layer; and a first contact hole, the first contact hole being in the first planarization layer, the first contact hole surrounding the dam. In addition, the first hydrogen barrier layer is in contact with the second hydrogen barrier layer via the first contact hole.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims the benefit of Korean Patent Application No. 10-2024-0019569 filed on February 28, 2024, in the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference. Technical Field

[0003] The present disclosure relates to a display device, and more particularly, to a display device capable of blocking hydrogen from flowing into a transistor. Background Art

[0004] With the development of the information society, the demand for display devices for displaying images is increasing. Display devices can be used in various types of devices such as TVs, monitors, tablet computers, navigation systems, game consoles, and mobile phones, and various types of display devices such as liquid crystal display (LCD) devices and organic light emitting display (OLED) devices are used.

[0005] The display device is provided with optical components such as a camera and a proximity sensor to provide users with more diverse functions. In order to recognize light, optical components such as a camera are exposed to the outside. The display device includes a recess or hole (for example, a hole in the active area (HiAA)) formed in the display area to expose the optical components. However, the hole formed in the display area can cause hydrogen to be exhausted to the transistor, making the transistor more conductive and damaging the transistor. The affected transistor can cause high brightness defects such as bright spots and abnormal light emission in the display device. Therefore, it is necessary to have a display device that can block hydrogen from flowing into the transistor and improve the manufacturing yield and quality of the display device. Summary of the Invention

[0006] An object of the present disclosure is to provide a display device capable of preventing a transistor from becoming a conductor by blocking an inflow path of hydrogen into the transistor.

[0007] Another object of the present disclosure is to provide a display device capable of minimizing reliability degradation due to high-brightness defects such as strong bright spots and abnormal light emission.

[0008] The objects of the present disclosure are not limited to the above objects, and those skilled in the art can clearly understand other objects not mentioned above from the following description.

[0009] According to one aspect of the present disclosure, a display device includes: a substrate, the substrate including a non-display area and a display area, the non-display area including a through hole, the display area surrounding the non-display area; a dam, the dam surrounding the through hole; a first hydrogen barrier layer, the first hydrogen barrier layer surrounding the dam; a first planarization layer, the first planarization layer on the first hydrogen barrier layer; a second hydrogen barrier layer, the second hydrogen barrier layer surrounding the dam on the first planarization layer, the second hydrogen barrier layer overlapping with at least a portion of the first hydrogen barrier layer; and a first contact hole, the first contact hole surrounding the dam in the first planarization layer, the first hydrogen barrier layer contacting the second hydrogen barrier layer in the first contact hole.

[0010] According to the present disclosure, by providing the hydrogen barrier layer around the planarization layer exposed by the through-hole, the penetration of hydrogen diffused from the through-hole or the packaging portion can be suppressed.

[0011] According to the present disclosure, the reliability of a display device can be improved by preventing an oxide semiconductor layer from becoming a conductor due to hydrogen.

[0012] According to the present disclosure, screen defects such as strong bright spots and abnormal light emission can be improved.

[0013] The effects according to the present disclosure are not limited to those exemplified above, and other various effects are included in the present disclosure.

[0014] Effects of the present disclosure are not limited to the above-mentioned effects, and other effects not mentioned above will be clearly understood by those of ordinary skill in the art from the following description.

[0015] The objects of the present disclosure, means for achieving the objects, and effects of the present disclosure described above do not specify essential features of the claims, and therefore, the scope of the claims is not limited to what is disclosed in the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The above and other aspects, features and other advantages of the present disclosure will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings, in which:

[0017] Figure 1 is a schematic plan view of a display device according to an embodiment of the present disclosure;

[0018] Figure 2 According to the embodiment of the present disclosure Figure 1 A cross-sectional view taken along line II-II′;

[0019] Figure 3 According to an embodiment of the present disclosure Figure 1 An enlarged plan view of area A;

[0020] Figure 4 According to the embodiment of the present disclosure Figure 3 A cross-sectional view taken along line IV-IV′;

[0021] Figure 5 is a cross-sectional view of a display device according to another embodiment of the present disclosure;

[0022] Figure 6 is a cross-sectional view of a display device according to yet another exemplary embodiment of the present disclosure;

[0023] Figure 7 is a cross-sectional view of a display device according to yet another exemplary embodiment of the present disclosure;

[0024] Figure 8 is a cross-sectional view of a display device according to still another exemplary embodiment of the present disclosure. DETAILED DESCRIPTION

[0025] The advantages and features of the present disclosure and the methods for achieving these advantages and features will be clear by referring to the exemplary embodiments described in detail below and the accompanying drawings. However, the present disclosure is not limited to the exemplary embodiments disclosed herein, but will be implemented in various forms. The exemplary embodiments are provided only as examples so that those skilled in the art can fully understand what is disclosed in the present disclosure and the scope of the present disclosure.

[0026] The shapes, sizes, ratios, angles, quantities, etc. shown in the drawings for describing the exemplary embodiments of the present disclosure are merely examples, and the present disclosure is not limited thereto. Throughout the specification, the same reference numerals generally represent the same elements. In addition, in the following description of the present disclosure, detailed explanations of known related arts may be omitted to avoid unnecessarily obscuring the subject matter of the present disclosure. Terms such as "including," "having," and "consisting of" used herein are generally intended to allow the addition of other components, unless these terms are used together with the term "only." Unless expressly stated otherwise, any reference to the singular may include the plural.

[0027] Even if not explicitly stated, the components are interpreted as including the ordinary error range.

[0028] When terms such as "on," "over," "below," and "next" are used to describe the positional relationship between two parts, one or more parts may be located between the two parts unless these terms are used together with the term "immediately" or "directly."

[0029] When an element or layer is referred to as being “on” another element or layer, the other layer or other elements may be directly on the other element or interposed therebetween.

[0030] Although terms such as "first" and "second" are used when describing various components, these components are not limited by these terms. These terms are only used to distinguish one component from other components. Therefore, the first component mentioned below can be the second component in the technical concept of the present disclosure.

[0031] Throughout the specification, like reference numerals generally refer to like elements.

[0032] For convenience of description, the size and thickness of each component shown in the drawings are illustrated, and the present disclosure is not limited to the size and thickness of the components shown.

[0033] The features of the various embodiments of the present disclosure may be partially or completely attached or combined with each other, and may be interlocked and operated in technically various ways, and the embodiments may be performed independently of each other or in association with each other.

[0034] Hereinafter, exemplary embodiments of the present disclosure will be described in detail with reference to the accompanying drawings.

[0035] Figure 1 is a schematic plan view of a display device according to an exemplary embodiment of the present disclosure.

[0036] refer to Figure 1 The display panel DP of the display device 100 is a panel on which an image is displayed. It may include display elements for realizing images and circuits, lines, components, etc. for driving the display elements disposed thereon. The display panel DP may include a display area AA and a non-display area NA. In addition, the non-display area NA may include a through hole TH.

[0037] The display area AA may be an area in which a plurality of sub-pixels SP are provided and an image is displayed. Each of the plurality of sub-pixels SP is a separate unit that emits light, and a display element and a driving circuit may be provided in each of the plurality of sub-pixels SP. For example, a display element for displaying an image and a circuit unit for driving the display element may be provided in the plurality of sub-pixels SP. In this case, when the display device 100 is an organic light-emitting display device, the display device may include an organic light-emitting diode, and when the display device 100 is a liquid crystal display device, the display device may include a liquid crystal device. The plurality of sub-pixels SP may include, but are not limited to, red sub-pixels, green sub-pixels, blue sub-pixels, and white sub-pixels. The driving circuit may include various transistors, storage capacitors, lines, and the like for driving the plurality of sub-pixels SP. For example, the driving circuit may be composed of various components such as a driving transistor, a switching transistor, a sensing transistor, a storage capacitor, a gate line, and a data line, but is not limited thereto.

[0038] The non-display area NA is an area where an image is not displayed, and may include a first non-display area NA1 and a second non-display area NA2 .

[0039] The first non-display area NA1 is an area where no images are displayed and is disposed so as to surround the display area AA. The first non-display area NA1 may be an area where various lines, driver ICs, and the like for driving the plurality of sub-pixels SP disposed in the display area AA are disposed. For example, various driver ICs such as gate driver ICs and data driver ICs may be disposed in the first non-display area NA1, but the present disclosure is not limited thereto. The first non-display area NA1, where no images are displayed, may be a border area, but exemplary embodiments of the present disclosure are not limited thereto.

[0040] The second non-display area NA2 is an area where no image is displayed and is provided in the display area AA. The second non-display area NA2 may include a through hole TH. In addition, an optical sensor component such as a camera or a proximity sensor may be provided in the through hole TH. The second non-display area NA2 is an area for providing the through hole TH within the display area AA and may therefore be defined as a hole in the active area (HiAA) area. In addition, the second non-display area NA2 may correspond to a frame area surrounding the through hole TH.

[0041] In the following, reference will be made to Figure 2 The specific structure of a sub-pixel SP is described.

[0042] Figure 2 According to the embodiment of the present disclosure Figure 1 Cross-sectional view taken along line II-II′.

[0043] refer to Figure 1 and 2The display device 100 includes a substrate 110 , a transistor 130 , an auxiliary electrode 141 , a connecting electrode 142 and a light emitting diode 150 .

[0044] The substrate 110 is a supporting member for supporting other components of the display device 100 and may be formed of an insulating material. For example, the substrate 110 may be formed of glass, resin, etc. In addition, the substrate 110 may be formed of a polymer such as polyimide (PI) or plastic, or may be formed of a flexible material.

[0045] The buffer layer 121 is provided on the substrate 110. The buffer layer 121 can reduce the penetration of moisture or impurities through the substrate 110. In addition, the buffer layer 121 can protect the transistor 130 from impurities such as alkali ions leaking from the substrate 110. In addition, the buffer layer 121 can improve the adhesion between the layers formed above the buffer layer 121 and the substrate 110. The buffer layer 121 can be configured by a single layer or a double layer of, for example, silicon oxide (SiOx) or silicon nitride (SiNx), but is not limited thereto.

[0046] The transistor 130 is provided on the buffer layer 121. The transistor 130 may drive the light emitting diode 150. The transistor 130 may include an active layer 131, a gate electrode 132, a source electrode 133, and a drain electrode 134.

[0047] The active layer 131 is provided on the buffer layer 121. The active layer 131 is a region where a channel is formed when the transistor 130 is driven. The active layer 131 may include a channel region, a source region, and a drain region. The active layer 131 may be formed of a semiconductor material such as an oxide semiconductor, amorphous silicon, or polycrystalline silicon, but is not limited thereto.

[0048] The gate insulating layer 122 is provided on the active layer 131. The gate insulating layer 122 is an insulating layer for electrically isolating the active layer 131 from the gate electrode 132. In addition, the gate insulating layer 122 may be configured of a single layer or a double layer of silicon oxide (SiOx) or silicon nitride (SiNx), but is not limited thereto.

[0049] The gate electrode 132 is disposed on the gate insulating layer 122. The gate electrode 132 is disposed on the gate insulating layer 122 to overlap with the channel region of the active layer 131. The gate electrode 132 may be formed of a conductive material such as copper (Cu), gold (Au), silver (Ag), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or an alloy thereof, but is not limited thereto.

[0050] The first interlayer insulating layer 123 and the second interlayer insulating layer 124 are provided on the gate electrode 132. Contact holes are formed in the first interlayer insulating layer 123 and the second interlayer insulating layer 124 to connect the source electrode 133 and the drain electrode 134 to the active layer 131, respectively. The first interlayer insulating layer 123 and the second interlayer insulating layer 124 may be configured by a single layer or a double layer of silicon oxide (SiOx) or silicon nitride (SiNx), but are not limited thereto. In addition, the second interlayer insulating layer 124 may be formed of an organic material and may be configured by a single layer or a double layer of, for example, polyimide or photo-acrylic, but are not limited thereto.

[0051] The source electrode 133 and the drain electrode 134 are disposed on the second interlayer insulating layer 124 to be spaced apart from each other and are electrically connected to the active layer 131 through contact holes in the gate insulating layer 122 , the first interlayer insulating layer 123 , and the second interlayer insulating layer 124 .

[0052] The source electrode 133 and the drain electrode 134 may be a multilayer configuration formed of a conductive material such as copper (Cu), gold (Au), silver (Ag), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or alloys thereof, but not limited thereto.

[0053] For example, the source electrode 133 and the drain electrode 134 may have a three-layer structure. The source electrode 133 and the drain electrode 134 may include a first layer, a second layer disposed on the first layer, and a third layer disposed on the second layer. The first layer and the third layer may be formed of titanium (Ti), and the second layer may be formed of aluminum (Al), but are not limited thereto. Figure 2 , for ease of illustration, the source electrode 133 and the drain electrode 134 are shown as a single layer.

[0054] The auxiliary electrode 141 is provided between the first interlayer insulating layer 123 and the second interlayer insulating layer 124. That is, the auxiliary electrode 141 may be provided on the first interlayer insulating layer 123. The auxiliary electrode 141 may be an electrode for forming a storage capacitor or other transistors in addition to the above-mentioned transistor 130, but is not limited thereto. The auxiliary electrode 141 may be formed of a conductive material such as copper (Cu), gold (Au), silver (Ag), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or an alloy thereof, but is not limited thereto.

[0055] A first planarization layer 125 and a second planarization layer 126 are provided on the transistor 130. The first planarization layer 125 and the second planarization layer 126 are insulating layers that planarize the upper portion of the substrate 110. The first planarization layer 125 may include a contact hole for electrically connecting the transistor 130 and the connection electrode 142. Specifically, the first planarization layer 125 may include a contact hole that exposes one of the source electrode 133 and the drain electrode 134 of the thin film transistor 130. The second planarization layer 126 may include a contact hole for electrically connecting the connection electrode 142 and the first electrode 151. The first planarization layer 125 and the second planarization layer 126 may be formed of an organic material and may be configured of a single layer or multiple layers of polyimide or photoacrylic, but are not limited thereto.

[0056] The connection electrode 142 is provided between the first planarization layer 125 and the second planarization layer 126. The connection electrode 142 is an electrode for connecting the source electrode 133 of the transistor 130 and the first electrode 151 of the light-emitting diode 150. The connection electrode 142 may be a multilayer configuration formed of a conductive material such as copper (Cu), gold (Au), silver (Ag), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or alloys thereof, but is not limited thereto.

[0057] For example, the connection electrode 142 may have a three-layer structure. For example, the connection electrode 142 may include a first layer, a second layer disposed on the first layer, and a third layer disposed on the second layer. The first layer and the third layer may be formed of titanium (Ti), and the second layer may be formed of aluminum (Al), but is not limited thereto. Figure 2 , for ease of explanation, the connection electrode 142 is shown as a single layer.

[0058] The light emitting diode 150 is disposed on the second planarization layer 126. The light emitting diode 150 may be disposed in the display area AA. The light emitting diode 150 includes a first electrode 151, a light emitting layer 152, and a second electrode 153. Here, the first electrode 151 may be an anode, and the second electrode 153 may be a cathode.

[0059] Meanwhile, the display device 100 can be implemented as a top emission type or a bottom emission type. In the case of the top emission type, a reflective layer can be provided below the first electrode 151 to reflect the light emitted by the light-emitting layer 152 to the second electrode 153. For example, the reflective layer can include a material having excellent reflective properties, such as aluminum (Al) or silver (Ag), but is not limited thereto. In contrast, in the case of the bottom emission type, the first electrode 151 can be made only of a transparent conductive material. Hereinafter, the display device 100 according to the exemplary embodiment of the present disclosure will be described assuming that it is a top emission type.

[0060] The first electrode 151 is provided on the second planarization layer 126. The first electrode 151 may correspond to each of the plurality of sub-pixels SP. That is, the first electrode 151 may be electrically connected to the connection electrode 142 through a contact hole formed in the second planarization layer 126. In addition, the first electrode 151 may be electrically connected to the source electrode 133 of the transistor 130 through the connection electrode 142. The first electrode 151 may be formed of a conductive material having a high work function to provide holes to the light emitting layer 152. For example, the first electrode 151 may be formed of a transparent conductive material such as indium tin oxide (ITO) and indium zinc oxide (IZO), but is not limited thereto.

[0061] The bank 127 is provided on the first electrode 151 and the second planarization layer 126. The bank 127 may be provided on the second planarization layer 126 to cover the edge of the first electrode 151. The bank 127 is an insulating layer provided between the plurality of sub-pixels SP to distinguish the plurality of sub-pixels SP. The bank 127 may be formed of an organic insulating material. For example, the bank 127 may be formed of polyimide, acrylic, or a benzocyclobutene (BCB)-based resin, but is not limited thereto.

[0062] The light-emitting layer 152 is provided on the first electrode 151 and the partition 127. The light-emitting layer 152 may be provided over the entire surface of the substrate 110. That is, the light-emitting layer 152 may be a common layer provided in a plurality of sub-pixels SP. The light-emitting layer 152 may be an organic layer that emits light of a specific color. For example, the light-emitting layer 152 may be one of a red light-emitting layer, a green light-emitting layer, a blue light-emitting layer, and a white light-emitting layer. In this case, when the light-emitting layer 152 is composed of a white light-emitting layer, a color filter may be further provided above the light-emitting diode 150. The light-emitting layer 152 may also include various layers, such as a hole transport layer, a hole injection layer, a hole blocking layer, an electron injection layer, an electron blocking layer, and an electron transport layer.

[0063] The second electrode 153 is provided on the light-emitting layer 152. The second electrode 153 can be provided as a layer over the entire surface of the substrate 110. That is, the second electrode 153 can be a common layer provided in multiple sub-pixels SP. The second electrode 153 provides electrons to the light-emitting layer 152 and can therefore be formed of a conductive material with a low work function. The second electrode 153 can be formed of, for example, a transparent conductive material (such as indium tin oxide (ITO) and indium zinc oxide (IZO)), a metal alloy (such as MgAg, ytterbium (Yb) alloy), etc., and may also include a metal doping layer, but is not limited thereto.

[0064] The encapsulation portion 160 is disposed on the light emitting diode 150. The encapsulation portion 160 protects the light emitting diode 150 from moisture penetrating from the outside of the display device 100. The encapsulation portion 160 includes a first encapsulation layer 161, a foreign matter covering layer 162, and a second encapsulation layer 163.

[0065] The first encapsulation layer 161 may be disposed on the second electrode 153 to suppress the penetration of moisture or oxygen. The first encapsulation layer 161 may be formed of an inorganic material such as silicon nitride (SiNx), silicon oxynitride (SiNxOy), or aluminum oxide (AllyOz), but is not limited thereto.

[0066] The foreign matter covering layer 162 is provided on the first encapsulation layer 161 to flatten the surface. In addition, the foreign matter covering layer 162 can cover or block foreign matter or particles that may appear during the manufacturing process. The foreign matter covering layer 162 can be formed of an organic material such as silicon oxycarbide (SiOxCz), acrylic acid, epoxy resin, etc., but is not limited thereto.

[0067] The second encapsulation layer 163 is provided on the foreign matter covering layer 162 and can suppress the penetration of moisture or oxygen like the first encapsulation layer 161. In this case, the second encapsulation layer 163 and the first encapsulation layer 161 can be provided to encapsulate the foreign matter covering layer 162. Therefore, the penetration of moisture or oxygen into the light emitting diode 150 can be more effectively reduced by the second encapsulation layer 163. The second encapsulation layer 163 can be formed of an inorganic material, such as silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiNxOy), or aluminum oxide (AllyOz), but is not limited thereto.

[0068] The touch detection unit may be provided on the encapsulation portion 160 . For example, the touch buffer layer 171 may be provided on the second encapsulation layer 163 , and the touch electrode TE may be provided on the touch buffer layer 171 .

[0069] The touch electrode TE may include a touch sensor metal TS and a bridge metal BRG located in different layers, and a touch interlayer insulating layer 173 may be provided between the touch sensor metal TS and the bridge metal BRG.

[0070] The touch interlayer insulating layer 173 may include an organic material or an inorganic material. In addition, an inorganic layer and an organic layer may be stacked to form the touch interlayer insulating layer 173.

[0071] The touch buffer layer 171 and the touch interlayer insulating layer 173 may be provided to eliminate a step at a location where the touch electrode TE is provided and to electrically isolate the touch electrode TE.

[0072] A touch planarization layer 181 may be provided on the touch detection unit. The touch planarization layer 181 may be an organic layer for planarizing and protecting the upper portion of the touch detection unit. For example, the touch planarization layer 181 may be formed of an organic material such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, and polyimide resin.

[0073] Figure 3According to an embodiment of the present disclosure Figure 1 An enlarged plan view of area A, Figure 4 It is along Figure 3 A cross-sectional view taken along line IV-IV′. Figure 3 In the figure, for convenience of description, only the plurality of data lines DL, the dam DAM, and the hydrogen barrier layer 190 are shown among various components of the display device 100 .

[0074] refer to Figure 3 and 4 In the second non-display area NA2 of the non-display area NA, a through hole TH, a dam DAM surrounding the through hole TH and a plurality of patterns PT, a hydrogen barrier layer 190, and a plurality of data lines DL bypassing the through hole TH are provided. Here, the second non-display area NA2 may refer to an area where an image is not displayed in the through hole TH and the surrounding area surrounding the through hole TH.

[0075] A through hole TH is provided in the second non-display area NA2. The through hole TH may be provided to physically penetrate the encapsulation portion 160 from the substrate 110. The through hole TH may be provided to correspond to a camera or an optical sensor. Light may easily be transmitted through the through hole TH from the upper portion of an optical component such as a camera or an optical sensor.

[0076] The dam DAM is provided to surround the through hole TH. The dam DAM may be provided between the through hole TH and the display area AA. In this case, the dam DAM may be provided closer to the through hole TH than the data line DL passing through the second non-display area NA2. In addition, the dam DAM may be provided closer to the through hole TH than the hydrogen barrier layer 190. For example, the dam DAM may completely surround the through hole TH, and the hydrogen barrier layer 190 may completely surround the dam DAM. In addition, the hydrogen barrier layer 190 and the dam DAM may have a circular shape or a shape corresponding to the through hole in a plan view, but the embodiment is not limited thereto. The dam DAM may suppress the foreign matter covering layer 162, which is part of the encapsulation portion 160, from overflowing into the through hole TH. That is, the dam DAM is a structure that suppresses the foreign matter covering layer 162 of the encapsulation portion 160 for protecting the light emitting diode from penetrating or leaking into the through hole TH. Figure 3 and 4 A single dam DAM is shown, but the number of dams DAM is not limited thereto, and a plurality of dams DAM may be provided.

[0077] The dam DAM may be provided in a closed curve shape surrounding the outer side of the through hole TH. The dam DAM may suppress overflow of the foreign matter covering layer 162. Therefore, the foreign matter covering layer 162 may be provided from the display area AA to the inner side of the dam DAM.

[0078] The dam DAM includes a first sub-dam DAMa and a second sub-dam DAMb on the first sub-dam DAMa. The first sub-dam DAMa can be formed simultaneously with the second planarization layer 126 using the same material. The second sub-dam DAMb can be formed simultaneously with the bank 127 using the same material. However, the material and number of layers of the dam DAM are not limited thereto.

[0079] The plurality of patterns PT may be arranged in a closed curve shape surrounding the outside of the through hole TH. The plurality of patterns PT may be arranged between the hydrogen barrier layer 190 and the dam DAM and between the dam DAM and the through hole TH. In addition, the plurality of patterns PT may be arranged to be spaced apart from each other by a certain distance. Figure 4 , a plurality of patterns PT are shown, two on the left side of the dam DAM and six on the right side of the dam DAM, but are not limited thereto.

[0080] The plurality of patterns PT include a first layer PT1, a second layer PT2 disposed on the first layer PT1, and a third layer PT3 disposed on the second layer PT2. The plurality of patterns PT may be disposed on the second interlayer insulating layer 124 and may be formed of the same material and have the same shape as the first hydrogen barrier layer 191 or the second hydrogen barrier layer 195.

[0081] The first layer PT1 and the third layer PT3 may include a titanium (Ti)-based material having excellent hydrogen capture capabilities. Titanium (Ti) is a metal with hydrogen adsorption capabilities that effectively blocks hydrogen. However, the present disclosure is not limited thereto, and the first layer PT1 and the third layer PT3 may include a titanium (Ti) alloy or titanium dioxide (TiO2). For example, similar to titanium (Ti), the first layer PT1 and the third layer PT3 may also include materials having excellent hydrogen adsorption capabilities such as scandium (Sc), vanadium (V), lead (Pd), niobium (Nb), zirconium (Zr), yttrium (Y), tantalum (Ta), cerium (Ce), lanthanum (La), samarium (Sm), and uranium (U).

[0082] The second layer PT2 may include a conductive material. For example, the second layer PT2 may include aluminum (Al), but may also be formed of copper (Cu), gold (Au), silver (Ag), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or alloys thereof, but is not limited thereto.

[0083] Multiple patterns PT can prevent moisture from penetrating through the light-emitting layer 152 into the display area AA. Specifically, the light-emitting layer 152, which is susceptible to moisture penetration, can be given a single-line structure by using multiple patterns PT. Specifically, the bottom surface of the second layer PT2 of the multiple patterns PT can be smaller than the top surface of the first layer PT1, and the bottom surface of the third layer PT3 can be larger than the top surface of the second layer PT2. Therefore, due to the multiple patterns PT, the light-emitting layer 152 disposed on the multiple patterns PT can be discontinuous and disconnected. For example, each pattern PT can have a cross-section that has a mushroom-like, anvil-like, or inverted-conical shape, with eaves or overhangs forming undercut regions. The multiple patterns PT interrupt the light-emitting layer 152 to block or prevent moisture from potentially wicking into the display area. Therefore, even if moisture penetrates the light-emitting layer 152 exposed on the side surfaces of the through-holes TH, the disconnected structure of the light-emitting layer 152 can prevent the permeated moisture from moving to the display area AA. Furthermore, the first encapsulation layer 161 on the light-emitting layer 152 can be provided to completely cover the disconnected portions of the light-emitting layer 152. Therefore, even if moisture penetrates through the light emitting layer 152, the first encapsulation layer 161 can effectively block the moisture penetration. Figure 4 It is shown that only the light emitting layer 152 is disposed under the encapsulation portion 160 , but the second electrode 153 may be further disposed between the encapsulation portion 160 and the light emitting layer 152 .

[0084] A plurality of data lines DL may be disposed on the second interlayer insulating layer 124 and the first planarization layer 125. In this case, the plurality of data lines DL may be disposed closer to the display area AA than the hydrogen barrier layer 190. That is, the plurality of data lines DL may be disposed farther from the dam DAM and the through hole TH than the hydrogen barrier layer 190. In this case, the plurality of data lines DL may be disposed between the hydrogen barrier layer 190 and the transistor 130, and may be disposed to bypass the through hole TH in the second non-display area NA2.

[0085] The plurality of data lines DL may include a first data line DL1 disposed on the second interlayer insulating layer 124 and a second data line DL2 disposed on the first planarization layer 125 .

[0086] The first data line DL1 may be formed of the same material as the source electrode 133, the drain electrode 134, and the first hydrogen barrier layer 191 on the second interlayer insulating layer 124. That is, the first data line DL1 may be formed simultaneously with the source electrode 133, the drain electrode 134, and the first hydrogen barrier layer 191.

[0087] The first data line DL1 includes a first layer DLa, a second layer DLb disposed on the first layer DLa, and a third layer DLc disposed on the second layer DLb.

[0088] The bottom surface of the second layer DLb of the first data line DL1 may be smaller than the top surface of the first layer DLa. In addition, the bottom surface of the third layer DLc may be larger than the top surface of the second layer DLb. Therefore, the first data line DL1 can make the first layer DLa and the third layer DLc disposed above and below the first data line DL1 have the largest width, respectively, and the second layer DLb disposed in the center have the smallest width.

[0089] The first layer DLa and the third layer DLc may include a titanium (Ti)-based material having excellent hydrogen capture capability. Titanium (Ti) is a metal having hydrogen adsorption capability that effectively blocks hydrogen. However, the present disclosure is not limited thereto, and the first and third layers may include a titanium (Ti) alloy or titanium dioxide (TiO2). For example, similar to titanium (Ti), the first layer DLa and the third layer DLc may also include materials having excellent hydrogen adsorption capability such as scandium (Sc), vanadium (V), lead (Pd), niobium (Nb), zirconium (Zr), yttrium (Y), tantalum (Ta), cerium (Ce), lanthanum (La), samarium (Sm), and uranium (U).

[0090] The second layer DLb may include a conductive material. For example, the second layer may include aluminum (Al), but may also be formed of copper (Cu), gold (Au), silver (Ag), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or alloys thereof, but is not limited thereto.

[0091] The second data line DL2 may be formed of the same material as the connection electrode 142 and the second hydrogen barrier layer 195 on the first planarization layer 125. The second data line DL2 may be formed simultaneously with the connection electrode 142 and the second hydrogen barrier layer 195.

[0092] The second data line DL2 includes a first layer, a second layer disposed on the first layer, and a third layer disposed on the second layer.

[0093] The bottom surface of the second layer of the second data line DL2 may be smaller than the top surface of the first layer. In addition, the bottom surface of the third layer may be larger than the top surface of the second layer. Therefore, the second data line may have the largest widths in the first layer and the third layer disposed above and below the second data line, respectively, and the smallest width in the second layer disposed in the center.

[0094] The first layer and the third layer may include a titanium (Ti)-based material having excellent hydrogen capture capability. Titanium (Ti) is a metal having hydrogen adsorption capability that effectively blocks hydrogen. However, the present disclosure is not limited thereto, and the first layer and the third layer may include a titanium (Ti) alloy or titanium dioxide (TiO2). For example, similar to titanium (Ti), the first layer and the third layer may also include materials such as scandium (Sc), vanadium (V), lead (Pd), niobium (Nb), zirconium (Zr), yttrium (Y), tantalum (Ta), cerium (Ce), lanthanum (La), samarium (Sm), and uranium (U) having excellent hydrogen adsorption capability.

[0095] The second layer may include a conductive material. For example, the second layer may include aluminum (Al), but may also be formed of copper (Cu), gold (Au), silver (Ag), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or alloys thereof, but is not limited thereto.

[0096] The hydrogen barrier layer 190 is disposed around the dam DAM. The hydrogen barrier layer 190 may be disposed between the dam DAM and the display area AA. In this case, the hydrogen barrier layer 190 may be disposed closer to the plurality of data lines DL passing through the second non-display area NA2 than the dam DAM. The hydrogen barrier layer 190 may be disposed in a closed loop shape to surround the dam DAM centered around the through hole TH.

[0097] The hydrogen barrier layer 190 may include a first hydrogen barrier layer 191 and a second hydrogen barrier layer 195 .

[0098] A first hydrogen barrier layer 191 may be disposed on the second interlayer insulating layer 124. The first hydrogen barrier layer 191 may be disposed on the second interlayer insulating layer 124 and may be formed of the same material as the source electrode 133, the drain electrode 134, and the first data line DL. The first hydrogen barrier layer 191 may include titanium (Ti). That is, the first hydrogen barrier layer 191 may be formed simultaneously with the source electrode 133, the drain electrode 134, and the first data line DL.

[0099] The first hydrogen barrier layer 191 may include a first layer 191 a , a second layer 191 b disposed on the first layer 191 a , and a third layer 191 c disposed on the second layer 191 b .

[0100] The bottom surface of the second layer 191b of the first hydrogen barrier layer 191 may be smaller than the top surface of the first layer 191a. In addition, the bottom surface of the third layer 191c may be larger than the top surface of the second layer 191b. Therefore, the first hydrogen barrier layer 191 can make the first layer 191a and the third layer 191c disposed above and below the first hydrogen barrier layer 191 have the largest widths, respectively, and the second layer 191b disposed at the center have the smallest width.

[0101] The first layer 191a and the third layer 191c may include a titanium (Ti)-based material having excellent hydrogen capture capability. Titanium (Ti) is a metal having hydrogen adsorption capability that effectively blocks hydrogen. However, the present disclosure is not limited thereto, and the first layer 191a and the third layer 191c may include a titanium (Ti) alloy or titanium dioxide (TiO2). For example, similar to titanium (Ti), the first layer 191a and the third layer 191c may also include materials such as scandium (Sc), vanadium (V), lead (Pd), niobium (Nb), zirconium (Zr), yttrium (Y), tantalum (Ta), cerium (Ce), lanthanum (La), samarium (Sm), and uranium (U) having excellent hydrogen adsorption capability.

[0102] The second layer 191b may include a conductive material. For example, the second layer may include aluminum (Al), but may also be formed of copper (Cu), gold (Au), silver (Ag), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or alloys thereof, but is not limited thereto.

[0103] Meanwhile, a first planarization layer 125 is disposed on the second interlayer insulating layer 124 , the plurality of data lines DL, and the first hydrogen barrier layer 191 .

[0104] The second hydrogen barrier layer 195 may be disposed on the first planarization layer 125 to overlap the first hydrogen barrier layer 191 . The second hydrogen barrier layer 195 may be disposed in the first contact hole C1 of the first planarization layer 125 to contact the first hydrogen barrier layer 191 .

[0105] The second hydrogen barrier layer 195 may be formed of the same material as the connection electrode 142. The second hydrogen barrier layer 195 may include titanium (Ti). The second hydrogen barrier layer 195 may be formed on the first planarization layer 125 simultaneously with the connection electrode 142.

[0106] The second hydrogen barrier layer 195 may include a first layer 195 a , a second layer 195 b disposed on the first layer 195 a , and a third layer 195 c disposed on the second layer 195 b .

[0107] The bottom surface of the second layer 195b of the second hydrogen barrier layer 195 may be smaller than the top surface of the first layer 195a. In addition, the bottom surface of the third layer 195c may be larger than the top surface of the second layer 195b. Therefore, the second hydrogen barrier layer 195 can make the first layer 195a and the third layer 195c disposed above and below the second hydrogen barrier layer 195b have the largest widths, respectively, and the second layer 195b disposed in the center have the smallest width.

[0108] The first layer 195a and the third layer 195c may include a titanium (Ti)-based material having excellent hydrogen capture capability. Titanium (Ti) is a metal having hydrogen adsorption capability that effectively blocks hydrogen. However, the present disclosure is not limited thereto, and the first layer 195a and the third layer 195c may include a titanium (Ti) alloy or titanium dioxide (TiO2). For example, in addition to titanium (Ti), the first layer 195a and the third layer 195c may also include materials such as scandium (Sc), vanadium (V), lead (Pd), niobium (Nb), zirconium (Zr), yttrium (Y), tantalum (Ta), cerium (Ce), lanthanum (La), samarium (Sm), and uranium (U) having excellent hydrogen adsorption capability.

[0109] The second layer 195b may include a conductive material. For example, the second layer 195b may include aluminum (Al), but may also be formed of copper (Cu), gold (Au), silver (Ag), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or an alloy thereof, but is not limited thereto.

[0110] The hydrogen barrier layer 190 can be electrically floating. Specifically, the first hydrogen barrier layer 191 and the second hydrogen barrier layer 195 can be electrically floating. That is, no voltage is applied to the hydrogen barrier layer 190, and the hydrogen barrier layer 190 can remain in an electrically floating state. For example, the hydrogen barrier layer 190 may include a plurality of virtual data lines (e.g., hydrogen barrier layers) that completely surround the through hole TH, and the plurality of virtual data lines may be interconnected to form a mesh barrier structure, a bird's nest structure, or a multi-layer wall structure, but the embodiment is not limited thereto. Therefore, a plurality of virtual data lines (e.g., hydrogen barrier layers) can together form a combined structure that can better prevent hydrogen or other gases that may enter through the through hole TH from reaching the transistors in the display area AA. Therefore, the transistors in the display area AA can be reliably protected.

[0111] The hydrogen barrier layer 190 can block the path of hydrogen flowing through the first planarization layer 125 into the transistor 130. Specifically, the hydrogen barrier layer 190 can have a hydrogen barrier structure that blocks hydrogen diffused from the interior of the package portion 160 or the through-hole TH from flowing through the side surfaces of the first planarization layer 125. Specifically, the hydrogen barrier layer 190 is formed of a material having excellent hydrogen capture capabilities as described above and can be arranged to completely cover the side surfaces of the first planarization layer 125 via the second hydrogen barrier layer 195 connected to the first hydrogen barrier layer 191 via the first contact hole C1. For example, the first contact hole C1 extends from the bottom surface of the second hydrogen barrier layer 195 to the top surface of the first hydrogen barrier layer 191 to block the space between the first and second hydrogen barrier layers in the first planarization layer 125. Furthermore, the hydrogen barrier layer 190 is arranged in a closed loop shape to surround the dam DAM centered on the through-hole TH. Therefore, even if hydrogen diffuses from the encapsulation portion 160 or the through hole TH, the hydrogen barrier structure of the hydrogen barrier layer 190 may suppress or prevent hydrogen from flowing into the transistor 130 in the display area AA.

[0112] Typically, to accommodate optical components such as cameras within the display area, a through-hole is provided within the display area, and the optical component, such as a camera, is positioned in the area corresponding to the through-hole. When a through-hole is provided within the display area, hydrogen diffused from the encapsulation portion can penetrate into the planarization layer through the side surface portions of the planarization layer. Furthermore, if this hydrogen reaches the active layer of a transistor, the transistor may become conductive. Furthermore, transistors that become conductive may cause high-brightness defects in the display device, such as strong bright spots and abnormal luminescence.

[0113] Therefore, in the display device 100 according to the exemplary embodiment of the present disclosure, the hydrogen barrier layer 190 can be provided to cover the side surface of the first planarization layer 125, thereby blocking the path for hydrogen to flow into the display area AA. Specifically, the hydrogen barrier layer 190 can be provided to completely cover the side surface of the first planarization layer 125 through the first contact hole C1 connecting the first hydrogen barrier layer 191 and the second hydrogen barrier layer 195. The hydrogen barrier layer 190 blocks the path for hydrogen diffused from the encapsulation portion 160 to penetrate into the first planarization layer 125. In addition, the hydrogen barrier layer 190 can be provided in a closed loop shape to surround the dam DAM centered on the through hole TH. Therefore, even if hydrogen diffuses from the encapsulation portion 160 or the through hole TH, the hydrogen barrier layer 190 can inhibit hydrogen from flowing into the transistor 130 in the display area AA. Therefore, in the display device 100 according to the exemplary embodiment of the present disclosure, the hydrogen barrier layer 190 can prevent the oxide semiconductor layer from becoming a conductor due to hydrogen, and can improve the reliability of the display device 100. Therefore, in the display device 100 according to the exemplary embodiment of the present disclosure, by preventing the transistor 130 from becoming a conductor due to hydrogen, high brightness defects such as strong bright spots and abnormal light emission may be prevented or minimized.

[0114] Figure 5 is a cross-sectional view of a display device according to another exemplary embodiment of the present disclosure. Figure 5 The display device 200 and Figures 1 to 4 The display device 100 is different only in the hydrogen barrier layer 290 , and other components are substantially the same, so repeated description will be omitted.

[0115] refer to Figure 5 , the hydrogen barrier layer 290 may include a second hydrogen barrier layer 295 arranged to overlap with the first hydrogen barrier layer 191. For example, the hydrogen barrier layer 290 may include a plurality of stacked dummy data lines that completely surround the through hole TH or form a ring around the through hole TH. In this case, the second hydrogen barrier layer 295 may contact the first hydrogen barrier layer 191 through the first contact hole C1′ of the first planarization layer 125. Here, the number of first contact holes C1′ may be multiple. For example, multiple dummy data lines (e.g., hydrogen barrier layers) may be stacked on top of each other and connected to each other through multiple contact holes to form a ring-shaped combined wall structure that can completely protect the side surfaces of the first planarization layer 125. That is, the first layer 295a of the second hydrogen barrier layer 295 may contact the first hydrogen barrier layer 191 through the multiple first contact holes C1′ penetrating the first planarization layer 125. Therefore, the second hydrogen barrier layer 295 may contact the first hydrogen barrier layer 191 through the multiple first contact holes C1′ of the first planarization layer 125 to completely cover the side surfaces of the first planarization layer 125. exist Figure 5 , the number of the plurality of first contact holes C1 ′ is shown as two, but is not limited thereto.

[0116] Therefore, in a display device 200 according to another exemplary embodiment of the present disclosure, a hydrogen barrier layer 290 may be provided to cover the side surfaces of the first planarization layer 125, thereby blocking the path for hydrogen to flow in. Specifically, the hydrogen barrier layer 290 may be provided to completely cover the side surfaces of the first planarization layer 125 via a second hydrogen barrier layer 295 connected to the first hydrogen barrier layer 191 via a first contact hole C1′. The hydrogen barrier layer 290 blocks the path for hydrogen diffused from the encapsulation portion 160 from partially penetrating into the first planarization layer 125 through the side surfaces of the first planarization layer 125. Even if hydrogen diffuses from the through hole TH, the hydrogen barrier layer 290 can suppress or prevent hydrogen from flowing into the transistor 130 in the display area AA.

[0117] Furthermore, in a display device 200 according to another exemplary embodiment of the present disclosure, by interconnecting the first hydrogen barrier layer 191 and the second hydrogen barrier layer 295 through the plurality of first contact holes C1' of the first planarization layer 125, the hydrogen barrier layer 290 can stably block the path for hydrogen to flow into the first planarization layer 125 even if some of the plurality of first contact holes C1' are disconnected. Specifically, if the first contact holes C1', which are configured to cover the side surfaces of the first planarization layer 125, are disconnected due to an impact, the side surfaces of the first planarization layer 125 may be exposed. In this case, the hydrogen barrier layer 290 can be provided so that the plurality of first contact holes C1' connecting the first hydrogen barrier layer 191 and the second hydrogen barrier layer 295 can more stably block the path for hydrogen that diffuses from the encapsulation portion 160 through the side surface portions of the first planarization layer 125 and penetrates into the first planarization layer 125. Therefore, in a display device 200 according to another exemplary embodiment of the present disclosure, by providing a hydrogen barrier layer 290 including a plurality of first contact holes C1' connecting the first hydrogen barrier layer 191 and the second hydrogen barrier layer 295, the hydrogen inflow path can be more stably blocked. For example, a multi-layer wall structure can be provided. In addition, the contact hole can extend all the way around the through hole TH in a closed loop shape corresponding to the hydrogen barrier layer, but the embodiment is not limited thereto. By preventing the oxide semiconductor layer, which serves as the active layer 131 of the transistor 130, from becoming a conductor due to hydrogen, the hydrogen barrier layer 290 can improve the reliability of the display device 200.

[0118] Figure 6 is a cross-sectional view of a display device according to still another exemplary embodiment of the present disclosure. Figure 6 The display device 300 and Figures 1 to 4 The display device 100 is different only in the hydrogen barrier layer 390 (eg, further including a third hydrogen barrier layer 399 ), and other components are substantially the same, so repeated description will be omitted.

[0119] refer to Figure 6 , the hydrogen barrier layer 390 may include a first hydrogen barrier layer 191 , a second hydrogen barrier layer 195 and a third hydrogen barrier layer 399 .

[0120] The third hydrogen barrier layer 399 is disposed on the second hydrogen barrier layer 195. Specifically, the third hydrogen barrier layer 399 can be disposed on the second planarization layer 126 to overlap with the second hydrogen barrier layer 195. The third hydrogen barrier layer 399 can contact the second hydrogen barrier layer 195 through the second contact hole C2 of the second planarization layer 126. For example, the hydrogen barrier layer 390 can have a three-layer wall structure that covers the side surfaces of both the first planarization layer 125 and the second planarization layer 126 and the upper surface of the second planarization layer 126.

[0121] The third hydrogen barrier layer 399 may include a titanium (Ti)-based material having excellent hydrogen capture capability. Titanium (Ti) is a metal having hydrogen adsorption capability that effectively blocks hydrogen. However, the present disclosure is not limited thereto, and the third hydrogen barrier layer 399 may include a titanium (Ti) alloy or titanium dioxide (TiO2). For example, similar to titanium (Ti), the third hydrogen barrier layer 399 may also include materials having excellent hydrogen adsorption capability such as scandium (Sc), vanadium (V), lead (Pd), niobium (Nb), zirconium (Zr), yttrium (Y), tantalum (Ta), cerium (Ce), lanthanum (La), samarium (Sm), and uranium (U).

[0122] The hydrogen barrier layer 390 may be electrically floating. Specifically, the first hydrogen barrier layer 191, the second hydrogen barrier layer 195, and the third hydrogen barrier layer 399 may be electrically floating. That is, no voltage is applied to the hydrogen barrier layer 390, and the hydrogen barrier layer 390 may be maintained in an electrically floating state.

[0123] The hydrogen barrier layer 390 can block the path of hydrogen flowing into the transistor 130 through the first planarization layer 125 and the second planarization layer 126. That is, the hydrogen barrier layer 390 can have a hydrogen barrier structure that blocks hydrogen diffused from the interior of the encapsulation portion 160 or the through-hole TH from flowing through the side surfaces of the first planarization layer 125 and the second planarization layer 126. Specifically, the hydrogen barrier layer 390 is formed of a material having excellent hydrogen capture capability as described above. The hydrogen barrier layer 390 can be arranged to completely cover the side surfaces of the first planarization layer 125 through the second hydrogen barrier layer 195 connected to the first hydrogen barrier layer 191 through the first contact hole C1. In addition, the hydrogen barrier layer 390 can be arranged to completely cover the side surfaces of the second planarization layer 126 through the third hydrogen barrier layer 399 connected to the second hydrogen barrier layer 195 through the second contact hole C2. For example, the second contact hole C2 extends from the bottom surface of the third hydrogen barrier layer 399 to the upper surface of the second hydrogen barrier layer 195 to block the space between the second hydrogen barrier layer and the third hydrogen barrier layer in the second planarization layer 126. In addition, the hydrogen barrier layer 390 is arranged in a closed loop shape to surround the dam DAM centered on the through hole TH. In addition, the contact hole can be formed in a closed loop shape or an annular shape and filled with metal to completely seal the side surface of the planarization layer, but the embodiment is not limited thereto. Therefore, even if hydrogen diffuses from the encapsulation portion 160 or the through hole TH, the hydrogen barrier structure of the hydrogen barrier layer 390 can suppress or prevent hydrogen from flowing into the transistor 130 in the display area AA.

[0124] Therefore, in the display device 300 according to another exemplary embodiment of the present disclosure, the hydrogen barrier layer 390 can be provided to cover the side surfaces of the first planarization layer 125 and the second planarization layer 126, thereby blocking the path for hydrogen to flow in. Specifically, the hydrogen barrier layer 390 can be provided to completely cover the side surfaces of the first planarization layer 125 through the second hydrogen barrier layer 195 connected to the first hydrogen barrier layer 191 via the first contact hole C1. In addition, the hydrogen barrier layer 390 can be provided to completely cover the side surfaces of the second planarization layer 126 through the third hydrogen barrier layer 399 connected to the second hydrogen barrier layer 195 via the second contact hole C2. Therefore, the hydrogen barrier layer 390 can block the path for hydrogen that diffuses from the encapsulation portion 160 through the side surface portions of the first and second planarization layers 125 and 126 to penetrate into the first and second planarization layers 125 and 126. Therefore, in a display device 300 according to another exemplary embodiment of the present disclosure, a hydrogen barrier layer 390 may be provided to prevent or inhibit the transistor 130 from becoming a conductor due to hydrogen, thereby minimizing high-brightness defects such as strong bright spots and abnormal luminescence, and improving the reliability of the display device 300.

[0125] Figure 7 is a cross-sectional view of a display device according to still another exemplary embodiment of the present disclosure. Figure 7 The display device 400 and Figure 6 The display device 300 is different only in the hydrogen barrier layer 490 , and other components are substantially the same, so repeated description will be omitted.

[0126] refer to Figure 7 , the hydrogen barrier layer 490 may include a first hydrogen barrier layer 191 , a second hydrogen barrier layer 195 and a third hydrogen barrier layer 499 .

[0127] The hydrogen barrier layer 490 includes a third hydrogen barrier layer 499 that is arranged to overlap with the second hydrogen barrier layer 195. In this case, the third hydrogen barrier layer 499 can contact the second hydrogen barrier layer 195 through the second contact hole C2' of the second planarization layer 126. Here, the number of the second contact holes C2' can be multiple. For example, the third hydrogen barrier layer 499 can be connected to the second hydrogen barrier layer 195 via three or more contact holes. In addition, the contact hole can be formed in a closed loop shape or a ring shape and filled with metal to completely seal the side of the planarization layer, but the embodiment is not limited thereto. That is, the third hydrogen barrier layer 499 can contact the second hydrogen barrier layer 195 through multiple second contact holes C2' that penetrate the second planarization layer 126. Therefore, the third hydrogen barrier layer 499 can contact the second hydrogen barrier layer 195 through the multiple second contact holes C2' of the second planarization layer 126 to completely cover the side surface of the second planarization layer 126. In Figure 7 , the number of the second contact holes C2' is shown as three, but is not limited thereto.

[0128] The third hydrogen barrier layer 499 may include a titanium (Ti)-based material having excellent hydrogen capture capability. Titanium (Ti) is a metal having hydrogen adsorption capability that effectively blocks hydrogen. However, the present disclosure is not limited thereto, and the third hydrogen barrier layer 499 may include a titanium (Ti) alloy or titanium dioxide (TiO2). For example, similar to titanium (Ti), the third hydrogen barrier layer 499 may also include materials having excellent hydrogen adsorption capability such as scandium (Sc), vanadium (V), lead (Pd), niobium (Nb), zirconium (Zr), yttrium (Y), tantalum (Ta), cerium (Ce), lanthanum (La), samarium (Sm), and uranium (U).

[0129] Therefore, in the display device 400 according to another exemplary embodiment of the present disclosure, the hydrogen barrier layer 490 can be provided to cover the side surfaces of the first planarization layer 125 and the second planarization layer 126, thereby blocking the path for hydrogen to flow in. Specifically, the hydrogen barrier layer 490 can be provided to completely cover the side surfaces of the first planarization layer 125 through the second hydrogen barrier layer 195 connected to the first hydrogen barrier layer 191 via the first contact hole C1. In addition, the hydrogen barrier layer 490 can be provided to completely cover the side surfaces of the second planarization layer 126 through the third hydrogen barrier layer 499 connected to the second hydrogen barrier layer 195 via the plurality of second contact holes C2'. Therefore, the hydrogen barrier layer 490 can block the path for hydrogen that diffuses from the encapsulation portion 160 through the side surface portions of the first and second planarization layers 125 and 126 to penetrate into the first and second planarization layers 125 and 126.

[0130] In addition, in the display device 400 according to another exemplary embodiment of the present disclosure, the hydrogen barrier layer 490 can stably block the hydrogen inflow path by connecting the second hydrogen barrier layer 195 and the third hydrogen barrier layer 499 through the plurality of second contact holes C2' of the second planarization layer 126. Even if some of the plurality of second contact holes C2' are disconnected, the hydrogen barrier layer 490 can stably block the hydrogen inflow path. That is, if the second contact hole C2' configured to cover the side surface of the second planarization layer 126 is disconnected due to an impact, the side surface of the second planarization layer 126 may be exposed. In this case, the plurality of second contact holes C2' connected to the second hydrogen barrier layer 195 and the third hydrogen barrier layer 499 can more stably block the hydrogen diffusion path from the encapsulation portion 160 through the side surface portion of the second planarization layer 126 into the second planarization layer 126 (for example, the plurality of contact holes can be filled with metal and serve as a support wall in the event that one of the contact holes is damaged). Therefore, in a display device 400 according to another exemplary embodiment of the present disclosure, a hydrogen barrier layer 490 may be provided to prevent the transistor 130 from becoming a conductor due to hydrogen, thereby minimizing high brightness defects such as strong bright spots and abnormal luminescence and improving the reliability of the display device 400.

[0131] Figure 8 is a cross-sectional view of a display device according to still another exemplary embodiment of the present disclosure. Figure 8 The display device 500 and Figure 7 The display device 400 is different in that the hydrogen barrier layer 590 is present, and other components are substantially the same, so repeated description will be omitted.

[0132] refer to Figure 8 , the hydrogen barrier layer 590 may include a first hydrogen barrier layer 191 , a second hydrogen barrier layer 395 and a third hydrogen barrier layer 499 .

[0133] The second hydrogen barrier layer 395 can contact the first hydrogen barrier layer 191 through the first contact hole C1' of the first planarization layer 125. Here, the number of the first contact holes C1' can be multiple. That is, the first layer 395a of the second hydrogen barrier layer 395 can contact the first hydrogen barrier layer 191 through the multiple first contact holes C1' penetrating the first planarization layer 125. Therefore, the second hydrogen barrier layer 395 can contact the first hydrogen barrier layer 191 through the multiple first contact holes C1' of the first planarization layer 125 to completely cover the side surface of the first planarization layer 125. Figure 8 , the number of the plurality of first contact holes C1 ′ is shown as two, but is not limited thereto.

[0134] Therefore, in the display device 500 according to another exemplary embodiment of the present disclosure, the hydrogen barrier layer 590 can be provided to cover the side surfaces of the first planarization layer 125 and the second planarization layer 126, thereby blocking the hydrogen inflow path. Specifically, the hydrogen barrier layer 590 can be provided to completely cover the side surface of the first planarization layer 125 through the second hydrogen barrier layer 395 connected to the first hydrogen barrier layer 191 via a plurality of first contact holes C1'. In addition, the hydrogen barrier layer 590 can be provided to completely cover the side surface of the second planarization layer 126 through the third hydrogen barrier layer 499 connected to the second hydrogen barrier layer 395 via a plurality of second contact holes C2'. Figure 8 In FIG, the number of the plurality of second contact holes C2' is shown as three, but is not limited thereto. The number of the second contact holes C2' may be greater than the number of the first contact holes C1'. For example, in Figure 8 In the embodiment, the number of the second contact holes C2' is three, and the number of the first contact holes C1' is two, but the present invention is not limited thereto.

[0135] Thus, the hydrogen barrier layer 590 may block a path of hydrogen diffused from the encapsulation portion 160 through side surface portions of the first and second planarization layers 125 and 126 from penetrating into the first and second planarization layers 125 and 126 .

[0136] In addition, in a display device 500 according to another exemplary embodiment of the present disclosure, the first hydrogen barrier layer 191 and the second hydrogen barrier layer 395 can be connected through the plurality of first contact holes C1' of the first planarization layer 125, and the second hydrogen barrier layer 395 and the third hydrogen barrier layer 499 can be connected through the plurality of second contact holes C2' of the second planarization layer 126. In this way, the contact holes can be filled with metal to form a large multi-layer wall structure having a closed loop shape or a ring shape surrounding the through hole TH. Therefore, even if at least one of the plurality of first contact holes C1' and the plurality of second contact holes C2' is disconnected, the hydrogen barrier layer 590 can more stably block the path of hydrogen diffused from the encapsulation portion 160 through the side surface portions of the first and second planarization layers 125 and 126 from penetrating into the first and second planarization layers 125 and 126. Therefore, in a display device 500 according to another exemplary embodiment of the present disclosure, a hydrogen barrier layer 590 may be provided to prevent the transistor 130 from becoming a conductor due to hydrogen, thereby minimizing high brightness defects such as strong bright spots and abnormal luminescence and improving the reliability of the display device 500.

[0137] According to embodiments of the present disclosure, a hydrogen barrier layer disposed within a planarization layer blocks hydrogen from flowing into transistors in the display area. Contact holes connect hydrogen barrier layers disposed within different planarization layers, and the combined structure can completely cover the side surfaces of the planarization layers. Furthermore, having multiple contact holes between the hydrogen barrier layers can further enhance the ability to block hydrogen inflow if one of the contact holes separates due to an impact.

[0138] Exemplary embodiments of the present disclosure may also be described as follows:

[0139] According to one aspect of the present disclosure, a display device includes: a substrate, the substrate including a non-display area and a display area, the non-display area including a through hole, and the display area surrounding the non-display area; a dam, the dam surrounding the through hole; a first hydrogen barrier layer, the first hydrogen barrier layer surrounding the dam; a first planarization layer, the first planarization layer on the first hydrogen barrier layer; a second hydrogen barrier layer, the second hydrogen barrier layer on the first planarization layer; a first contact hole on the first planarization layer, the second hydrogen barrier layer surrounding the dam and overlapping with at least a portion of the first hydrogen barrier layer; the first hydrogen barrier layer contacts the second hydrogen barrier layer in the first contact hole, and the first contact hole surrounds the dam.

[0140] There may be a plurality of first contact holes.

[0141] The display device may further include a transistor provided on the substrate, and the first hydrogen barrier layer may include a same material as a source electrode or a drain electrode of the transistor.

[0142] The display device may also include: a connecting electrode connected to the transistor on the first planarization layer; a second planarization layer on the first planarization layer, the second planarization layer covering the connecting electrode and the second hydrogen barrier layer; and a light-emitting diode on the second planarization layer connected to the connecting electrode, the connecting electrode and the second hydrogen barrier layer comprising the same material.

[0143] The first hydrogen barrier layer and the second hydrogen barrier layer may include titanium (Ti).

[0144] The display device may further include a plurality of data lines between the transistor and the first and second hydrogen barrier layers, and the plurality of data lines bypass the through-holes.

[0145] The first hydrogen barrier layer and the second hydrogen barrier layer may be electrically floating.

[0146] The display device may also include: a second planarization layer, the second planarization layer is on the first planarization layer, the second planarization layer covers the second hydrogen barrier layer; and a third hydrogen barrier layer, the third hydrogen barrier layer is on the second planarization layer, the third hydrogen barrier layer surrounds the dam and overlaps with at least a portion of the second hydrogen barrier layer, the second planarization layer also includes a second contact hole, the second planarization layer surrounds the dam, and the second hydrogen barrier layer contacts the third hydrogen barrier layer in the second contact hole.

[0147] There may be a plurality of second contact holes.

[0148] The third hydrogen barrier layer may include titanium (Ti).

[0149] The first hydrogen barrier layer, the second hydrogen barrier layer, and the third hydrogen barrier layer may be electrically floating.

[0150] The display device may further include a plurality of patterns arranged between the first hydrogen barrier layer and the dam and between the dam and the through hole, the plurality of patterns being formed of the same material and having the same shape as the first hydrogen barrier layer or the second hydrogen barrier layer.

[0151] Each of the plurality of patterns may include a first layer, a second layer on the first layer, and a third layer on the second layer, wherein the second layer has a bottom surface smaller than a top surface of the first layer and the third layer has a bottom surface larger than a top surface of the second layer.

[0152] A width of the third hydrogen barrier layer may be longer than a width of the second hydrogen barrier layer and longer than a width of the first hydrogen barrier layer.

[0153] The number of the first contact holes and the number of the second contact holes are plural, and the number of the second contact holes may be greater than the number of the first contact holes.

[0154] Although the exemplary embodiments of the present disclosure have been described in detail with reference to the accompanying drawings, the present disclosure is not limited thereto and can be implemented in many different forms without departing from the technical concept of the present disclosure. Therefore, the exemplary embodiments of the present disclosure are provided for illustrative purposes only and are not intended to limit the technical concept of the present disclosure. The scope of the technical concept of the present disclosure is not limited thereto. Therefore, it should be understood that the above exemplary embodiments are illustrative in all aspects and do not limit the present disclosure. All technical concepts within the equivalent scope of the present disclosure should be interpreted as falling within the scope of the present disclosure.

Claims

1. A display device comprising: a substrate, the substrate comprising a non-display area and a display area, the non-display area comprising a through hole, and the display area surrounding the non-display area; a dam surrounding the through hole; a first hydrogen barrier layer surrounding the dam; a first planarization layer, the first planarization layer being disposed on the first hydrogen barrier layer; a second hydrogen barrier layer, the second hydrogen barrier layer surrounding the dam, the second hydrogen barrier layer being disposed on the first planarization layer and overlapping at least a portion of the first hydrogen barrier layer; as well as a first contact hole, the first contact hole being in the first planarization layer and surrounding the dam; The first hydrogen barrier layer contacts the second hydrogen barrier layer via the first contact hole.

2. The display device according to claim 1, wherein The first contact hole includes a plurality of first contact holes.

3. The display device according to claim 1, further comprising: a transistor, the transistor being provided on the substrate in the display area, The first hydrogen barrier layer includes the same material as the source electrode or the drain electrode of the transistor.

4. The display device according to claim 3, further comprising: a connecting electrode disposed on the first planarization layer and connected to the transistor; a second planarization layer, the second planarization layer being disposed on the first planarization layer, and the second planarization layer covering the connecting electrode and the second hydrogen barrier layer; as well as a light emitting diode provided on the second planarization layer and connected to the connection electrode, Wherein, the connecting electrode and the second hydrogen barrier layer include the same material.

5. The display device according to claim 4, wherein The first hydrogen barrier layer and the second hydrogen barrier layer include titanium (Ti).

6. The display device according to claim 4, further comprising: a plurality of data lines, wherein the plurality of data lines are arranged between the transistor and the first hydrogen barrier layer and the second hydrogen barrier layer; The plurality of data lines bypass the through hole or extend around the through hole.

7. The display device according to claim 1, wherein The first hydrogen barrier layer and the second hydrogen barrier layer are electrically floating.

8. The display device according to claim 1, further comprising: a second planarization layer, the second planarization layer being disposed on the first planarization layer and covering the second hydrogen barrier layer; as well as a third hydrogen barrier layer, the third hydrogen barrier layer being disposed on the second planarization layer; wherein the third hydrogen barrier layer surrounds the dam and overlaps at least a portion of the second hydrogen barrier layer, wherein the second planarization layer includes a second contact hole surrounding the dam, The second hydrogen barrier layer contacts the third hydrogen barrier layer via the second contact hole.

9. The display device according to claim 8, wherein The second contact hole includes a plurality of second contact holes.

10. The display device according to claim 8, wherein The third hydrogen barrier layer includes titanium (Ti).

11. The display device according to claim 8, wherein The first hydrogen barrier layer, the second hydrogen barrier layer, and the third hydrogen barrier layer are electrically floating.

12. The display device according to claim 11, wherein The width of the third hydrogen barrier layer is longer than that of the second hydrogen barrier layer and longer than that of the first hydrogen barrier layer.

13. The display device according to claim 12, wherein: The first contact hole includes a plurality of first contact holes, and the second contact hole includes a plurality of second contact holes. The number of the second contact holes is greater than the number of the first contact holes.

14. The display device according to claim 1, further comprising: a plurality of patterns, the plurality of patterns being disposed between the first hydrogen barrier layer and the dam and between the dam and the through hole, The plurality of patterns include the same material as that of the first hydrogen barrier layer or the second hydrogen barrier layer.

15. The display device according to claim 14, wherein Each of the plurality of patterns comprises: First floor; a second layer disposed on the first layer, the second layer having a bottom surface smaller than a top surface of the first layer; and A third layer is disposed on the second layer, wherein a bottom surface of the third layer is larger than a top surface of the second layer.

16. A display device comprising: a plurality of sub-pixels, wherein the plurality of sub-pixels are arranged in a display area of the substrate; a through hole, wherein the through hole is located in a non-display area of the substrate; a first hydrogen barrier layer surrounding the through hole; a first planarization layer, the first planarization layer being disposed on and covering the first hydrogen barrier layer; a second hydrogen barrier layer disposed on the first planarization layer and surrounding the through hole; a first contact hole in the first planarization layer and surrounding the through hole; The first hydrogen barrier layer is connected to the second hydrogen barrier layer via the first contact hole.

17. The display device according to claim 16, wherein: The first contact hole includes a plurality of first contact holes, and the first hydrogen barrier layer is connected to the second hydrogen barrier layer via the plurality of first contact holes.

18. The display device according to claim 16, wherein: The first hydrogen barrier layer and the second hydrogen barrier layer cover side surfaces of the first planarization layer.

19. The display device according to claim 16, further comprising: a second planarization layer, the second planarization layer being disposed on the first planarization layer and covering the second hydrogen barrier layer; a third hydrogen barrier layer, the third hydrogen barrier layer being disposed on the second planarization layer and surrounding the through hole; and A second contact hole is located in the second planarization layer and surrounds the through hole, wherein the second hydrogen barrier layer is connected to the third hydrogen barrier layer via the second contact hole.

20. The display device according to claim 19, wherein The first contact hole includes a plurality of first contact holes, and the first hydrogen barrier layer is connected to the second hydrogen barrier layer via the plurality of first contact holes, or The second contact hole includes a plurality of second contact holes, and the third hydrogen barrier layer is connected to the second hydrogen barrier layer via the plurality of second contact holes.

21. The display device according to claim 19, wherein The first hydrogen barrier layer, the first contact hole, and the second hydrogen barrier layer form a wall structure having a closed loop shape or a ring shape.

22. The display device according to claim 19, further comprising: a plurality of data lines, wherein the plurality of data lines are arranged in the display area of the substrate, The first hydrogen barrier layer and the second hydrogen barrier layer are dummy data lines including the same material as the plurality of data lines.

23. The display device according to claim 22, wherein: The dummy data lines are stacked on top of each other in concentric rings surrounding the through-hole.

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