Miniature LED drive circuit

Abstract

The invention provides a miniature LED driving circuit. The miniature LED driving circuit comprises a signal generation module, a driving module and a miniature LED, the signal generation module receives the light-emitting control signal and the first comparison reference signal, and outputs a PWM signal based on the light-emitting control signal and the first comparison reference signal; the driving module comprises a driving transistor and a correction module, one end of the driving module is connected to a power supply signal, the other end of the driving module is connected with the micro LED, the correction unit receives the PAMD signal, the PWM signal and a second comparison reference signal, when the PWM signal is in a first level state, the second comparison reference signal is transmitted to the control end of the driving transistor, and when the PWM signal is in a second level state, the micro LED is driven. When the PWM signal is in a second level state, the PAMD signal is transmitted to the control end of the driving transistor; and the micro LED is connected with the driving module, receives the conduction current and the light-emitting control signal, and responds to the light-emitting control signal and the control of the conduction current to emit light.

Description

Micro LED driver circuit

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to the Chinese patent applications filed on March 21, 2023, with application number 202310279540.7; this application claims priority to the Chinese patent applications filed on March 21, 2023, with application number 202310281342.4; this application claims priority to the Chinese patent applications filed on March 21, 2023, with application number 202310281368.9; this application claims priority to the Chinese patent applications filed on March 21, 2023, with application number 202310281358.5, the entire contents of which are incorporated herein by reference. Technical Field

[0003] The present application relates to the field of semiconductor technology, and in particular to a micro LED driving circuit. Background Art

[0004] With the continuous development of LED technology, micro-LEDs are widely used in the display field due to their many advantages, such as seamless splicing, high refresh rate, ultra-high definition, low energy consumption, and long life. For example, sub-millimeter light-emitting diodes (Mini LEDs) and micro light-emitting diodes (Micro LEDs) are widely used in ultra-fine pitch LED displays.

[0005] In practical applications, the micro LED works under the drive of a driving circuit. In the above solution, the light emission control accuracy of the micro LED driving circuit is relatively low.

[0006] Summary of the Invention

[0007] According to an embodiment of the present application, a micro-LED driving circuit includes: a signal generating module, a driving module, and a micro-LED; the signal generating module is configured to receive a light-emission control signal and a first comparison reference signal, and output a PWM signal based on the light-emission control signal and the first comparison reference signal; wherein the first comparison reference signal is a linearly increasing ramp signal; and the PWM signal is a PWM signal with different pulse widths; the driving module is connected to the signal generating module, the driving module includes a driving transistor and a correction unit, one end of the driving module is connected to a power supply signal, and the other end of the driving module is connected to the micro-LED; the correction unit is connected to the driving transistor, the correction unit receives a PAMD signal, the PWM signal, and a second comparison reference signal, and is configured to transmit the second comparison reference signal to the control terminal of the driving transistor when the PWM signal is at a first level, and transmit the PAMD signal to the control terminal of the driving transistor when the PWM signal is at a second level; wherein the second comparison reference signal and the first comparison reference signal have the same variation trend; the micro-LED is connected to the driving module, configured to receive a conduction current and the light-emission control signal, and emit light in response to the light-emission control signal and the conduction current. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] FIG1 is a schematic structural diagram of a micro LED driving circuit according to related art;

[0009] FIG2 is a schematic structural diagram of a micro LED driving circuit according to an embodiment of the present application;

[0010] FIG3 is a schematic structural diagram of another micro LED driving circuit according to an embodiment of the present application;

[0011] FIG4 is a schematic structural diagram of another micro LED driving circuit according to an embodiment of the present application;

[0012] FIG5 is a schematic structural diagram of another micro LED driving circuit according to an embodiment of the present application;

[0013] FIG6 is a schematic structural diagram of another micro LED driving circuit according to an embodiment of the present application;

[0014] FIG7 is a schematic structural diagram of another micro LED driving circuit according to an embodiment of the present application;

[0015] FIG8 is a schematic structural diagram of another micro LED driving circuit according to an embodiment of the present application;

[0016] FIG9 is a schematic structural diagram of another micro LED driving circuit according to an embodiment of the present application;

[0017] FIG10 is a schematic structural diagram of another micro LED driving circuit according to an embodiment of the present application;

[0018] FIG11 is a signal state diagram according to an embodiment of the present application;

[0019] FIG12 is a schematic structural diagram of another micro LED driving circuit according to an embodiment of the present application;

[0020] FIG13 is a schematic structural diagram of another micro LED driving circuit according to an embodiment of the present application;

[0021] FIG14 is a schematic structural diagram of another micro LED driving circuit according to an embodiment of the present application;

[0022] FIG15 is a schematic structural diagram of another micro LED driving circuit according to an embodiment of the present application;

[0023] FIG16 is a schematic structural diagram of another micro LED driving circuit according to an embodiment of the present application;

[0024] FIG17 is a schematic structural diagram of another micro LED driving circuit according to an embodiment of the present application;

[0025] FIG18 is a schematic structural diagram of another micro LED driving circuit according to an embodiment of the present application;

[0026] FIG19 is a schematic structural diagram of another micro LED driving circuit according to an embodiment of the present application;

[0027] FIG20 is a schematic structural diagram of another micro LED driving circuit according to an embodiment of the present application;

[0028] FIG21 is another signal state diagram according to an embodiment of the present application;

[0029] FIG22 is a schematic structural diagram of another micro LED driving circuit according to an embodiment of the present application;

[0030] FIG23 is a schematic structural diagram of another micro LED driving circuit according to an embodiment of the present application;

[0031] FIG24 is a schematic structural diagram of another micro LED driving circuit according to an embodiment of the present application;

[0032] FIG25 is a schematic structural diagram of another micro LED driving circuit according to an embodiment of the present application;

[0033] FIG26 is a schematic structural diagram of another micro LED driving circuit according to an embodiment of the present application;

[0034] FIG27 is a schematic structural diagram of another micro LED driving circuit according to an embodiment of the present application;

[0035] FIG28 is a schematic structural diagram of another micro LED driving circuit according to an embodiment of the present application;

[0036] FIG29 is a schematic structural diagram of another micro LED driving circuit according to an embodiment of the present application;

[0037] FIG30 is a schematic structural diagram of another micro LED driving circuit according to an embodiment of the present application;

[0038] FIG31 is another signal state diagram according to an embodiment of the present application;

[0039] FIG32 is a schematic structural diagram of another micro LED driving circuit according to an embodiment of the present application;

[0040] FIG33 is a schematic structural diagram of another micro LED driving circuit according to an embodiment of the present application;

[0041] FIG34 is a schematic structural diagram of another micro LED driving circuit according to an embodiment of the present application;

[0042] FIG35 is a schematic structural diagram of another micro LED driving circuit according to an embodiment of the present application;

[0043] FIG36 is a schematic structural diagram of another micro LED driving circuit according to an embodiment of the present application;

[0044] FIG37 is a schematic structural diagram of another micro LED driving circuit according to an embodiment of the present application;

[0045] FIG38 is a schematic structural diagram of another micro LED driving circuit according to an embodiment of the present application;

[0046] FIG39 is a schematic structural diagram of another micro LED driving circuit according to an embodiment of the present application;

[0047] Figure 40 is another signal state diagram according to an embodiment of the present application. DETAILED DESCRIPTION

[0048] In the specification and claims of this application and the drawings, the terms "first," "second," and the like are used to distinguish similar or similar objects or entities and are not necessarily intended to limit a particular order or precedence, unless otherwise indicated. It should be understood that the terms used in this manner are interchangeable where appropriate, for example, the embodiments of this application can be implemented in an order other than that shown or described in the drawings.

[0049] In addition, the terms "including" and "having" and any variations thereof are intended to cover, but not exclude, inclusion. For example, a product or device comprising a list of components is not necessarily limited to those components explicitly listed, but may include other components not explicitly listed or inherent to such products or devices. The term "module" as used in this application refers to any known or later developed hardware, software, firmware, artificial intelligence, fuzzy logic, or combination of hardware and / or software code that is capable of performing the functions associated with the element.

[0050] Figure 1 is a schematic diagram of the structure of a micro-LED driver circuit in related art. As shown in Figure 1, the micro-LED driver circuit includes a signal generation module 01, a transistor Ta, a transistor Tb, a capacitor C0, a driver transistor Tc, and a micro-LED 02. Transistors Ta and Tb are P-type thin-film transistors (TFTs), which turn on in response to a low level and turn off in response to a high level.

[0051] The micro-LED driver circuit includes a driver transistor Tc, one end of which is connected to the power supply signal VDD and the other end of which is connected to the micro-LED 02. The light emission state of the micro-LED 02 is controlled by turning the driver transistor Tc on and off. The control end of the driver transistor Tc is connected to the power supply signal VDD via transistors Ta and Tb; the control end of the driver transistor is also connected to the PAMD signal. Transistor Ta is turned on during the comparative light emission phase, while the control end of transistor Tb receives a PWM signal and turns it on and off based on the PWM signal.

[0052] Combined with the actual scenario description, the signal generation module 01 receives the light-emitting control signal EM and the comparison reference signal SWEEP, and outputs a PWM signal to the transistor Tb based on the light-emitting control signal EM and the comparison reference signal SWEEP; in the comparative light-emitting stage, the transistor Ta is turned on in response to the light-emitting control signal EM; when the PWM signal changes from a high-level state to a low-level state, the transistor Tb changes from off to on, and the power supply signal VDD is transmitted to the control end of the driving transistor Tc through the turned-on transistor Ta and transistor Tb, so that the driving transistor Tc is turned off, thereby stopping the micro LED02 from emitting light.

[0053] However, due to the bias stress of transistor Ta, the power supply signal VDD cannot be transmitted to the control terminal of the driving transistor Tc in time, so that the micro LED cannot change from the luminous state to the non-luminous state in time, and the light control accuracy of the micro LED driving circuit is relatively low.

[0054] Figure 2 is a structural schematic diagram of a micro LED driving circuit provided in an embodiment of the present application. As shown in Figure 2, this embodiment provides a micro LED driving circuit, including: a signal generating module 10, a driving module 11 and a micro LED 12; wherein the driving module 11 includes a driving transistor T0 and a correction unit 111.

[0055] In this embodiment, the signal generation module 10 is configured to receive the light emission control signal EM and the first comparison reference signal SWEEP1, and output a PWM signal based on the light emission control signal EM and the first comparison reference signal SWEEP1. The first comparison reference signal is a linearly increasing ramp signal, and the PWM signal is a PWM signal with varying pulse widths.

[0056] In this embodiment, the driving module 11 is connected to the signal generating module 10, and the driving module 10 includes a driving transistor T0 and a correction unit 111. One end of the driving module 11 is connected to the power supply signal VDD, and the other end of the driving module 11 is connected to the micro LED 12; the correction unit 111 is connected to the control end of the driving transistor T0, and the control unit 111 receives a PAMD signal, a PWM signal, and a second comparison reference signal SWEEP2, and is used to transmit the second comparison reference signal SWEEP2 to the control end of the driving transistor T0 when the PWM signal is in a first level state; and when the PWM signal is in a second level state, transmit the PAMD signal to the control end of the driving transistor T0; wherein the second comparison reference signal SWEEP2 has the same change trend as the first comparison reference signal SWEEP1.

[0057] In this embodiment, the micro LED 12 is connected to the driving module 11 , and is configured to receive the conduction current and the light-emitting control signal EM, and emit light in response to the light-emitting control signal EM and the conduction current.

[0058] In this embodiment, the micro-LED driving process is divided into three phases: an initialization phase, a row scanning phase, and a comparative light emission phase. During the initialization phase, the input terminal of the signal generation module 10 is set to the reference power supply voltage REF. During the row scanning phase, the signal generation module 10 receives the PWMD signal and sets the input terminal and the output terminal of the signal generation module 10 to approximately the PWMD voltage.

[0059] The light-emission control signal EM is used to control the operating phase of the micro-LED driver circuit, determining whether it is in the comparative light-emission phase. For example, when the light-emission control signal EM is at a first level, the micro-LED driver circuit is currently operating in the comparative light-emission phase; when the light-emission control signal EM is at a second level, the micro-LED driver circuit is not currently operating in the comparative light-emission phase. It will be understood that when the signal generation module 10 receives the light-emission control signal EM and the light-emission control signal EM is at the first level, the micro-LED driver circuit is currently operating in the comparative light-emission phase, and the signal generation module begins outputting a PWM signal to the driver module 11.

[0060] At the beginning of the comparison light-emitting stage, the input end of the signal generation module 10 receives the first comparison reference signal SWEEP1, which is a linearly increasing ramp signal; the output end of the signal generation module 10 is connected to the correction unit 111, and the signal generation module 10 outputs a PWM signal in a second level state to the correction unit 111; the correction unit 111 receives the PAMD signal and the second comparison reference signal SWEEP2, and the correction unit 111 responds to the PWM signal in the second level state and transmits the above-mentioned PAMD signal to the control end of the driving transistor T0 to control the driving transistor T0 to turn on, and the micro LED 12 starts to emit light.

[0061] Some time after the comparative light-emitting phase begins, because the level of the first comparison reference signal SWEEP1 is still relatively low, the signal generation module 10 continues to output a PWM signal at the second level. Therefore, the correction unit 111 continues to transmit the aforementioned PAMD signal to the control terminal of the driving transistor T0, thereby turning on the driving transistor T0 and causing the micro LED 12 to continue emitting light. As the first comparison reference signal SWEEP1 gradually increases until the level of the first comparison reference signal SWEEP1 reaches a higher level, the signal generation module 10 outputs a PWM signal at the first level, and the correction unit 111 transmits the second comparison reference signal SWEEP2 to the control terminal of the driving transistor T0. The second comparison reference signal SWEEP2 has the same variation trend as the first comparison reference signal SWEEP1, being a linearly increasing ramp signal. As the second comparison reference signal SWEEP2 increases, the driving transistor T0 is turned off, causing the micro LED 12 to stop emitting light.

[0062] It will be understood that one end of the driver module 11 is connected to the power supply signal VDD and the other end is connected to the micro-LED 12. When the driver transistor T0 is on, the driver module 11 provides a conduction current to the micro-LED 12; when the driver transistor T0 is off, the driver module 11 stops providing the conduction current to the micro-LED 12. In this embodiment, the micro-LED 12 is connected to the driver module 11 to receive the conduction current and the emission control signal EM, and to emit light in response to the emission control signal EM and the conduction current. It will be understood that the micro-LED 12 will only emit light when the emission control signal EM indicates that the current operating stage of the micro-LED driver circuit is the comparative emission stage and the driver module 11 outputs the conduction current to the micro-LED 12.

[0063] In actual applications, during the comparison light-emitting phase, the signal generation module 10 outputs a PWM signal based on the first comparison reference signal SWEEP1. For example, when the first comparison reference signal SWEEP1 is greater than a preset threshold, the signal generation module 10 outputs a PWM signal at a first level. When the first comparison reference signal SWEEP1 is less than the preset threshold, the signal generation module 10 outputs a PWM signal at a second level.

[0064] In this embodiment, the second comparison reference signal SWEEP2 and the first comparison reference signal SWEEEP1 are applied synchronously and have the same changing trend. The first comparison reference signal SWEEEP1 is a linearly increasing ramp signal, and the second comparison reference signal SWEEP2 is a linearly increasing ramp signal. Accordingly, when the first comparison reference signal SWEEP1 is less than a preset threshold, the signal generation module 10 generates a PWM signal at the second level, and the correction unit 111 transmits the PAMD signal to the control terminal of the driving transistor T0. The second comparison reference signal SWEEP2 is not transmitted to the control terminal of the driving transistor T0, does not affect the voltage at the control terminal of the driving transistor T0, and does not cause a change in the conduction state of the driving transistor T0. The driving transistor T0 is turned on, and the micro LED continues to emit light. Until the first comparison reference signal SWEEP1 rises to a preset threshold value, causing the level state of the PWM signal to change, the correction unit 111 transmits the second comparison reference signal SWEEP2 to the control end of the driving transistor T0. The second comparison reference signal SWEEP2 rises to a certain voltage. The second comparison reference signal SWEEP2 can control the driving transistor T0 to be disconnected. The driving transistor T0 is turned off and the micro LED stops emitting light.

[0065] During the comparative light-emission phase, when the micro-LED stops emitting light, the first comparison reference signal SWEEP1 maintains a high level. Therefore, the signal generation module 10 outputs a PWM signal at the first level, and the correction unit 111 transmits the second comparison reference signal SWEEP2 to the control terminal of the driving transistor T0. In actual applications, the driving transistor T0 is a P-type thin-film transistor. As the second comparison reference signal SWEEP2 increases, the driving transistor T0 turns off, and the micro-LED stops emitting light. In practice, the second comparison reference signal SWEEP2 and the first comparison reference signal SWEEP1 have the same changing trend, and the PWM signal used to control the on and off of the driving transistor T0 is generated based on the first comparison reference signal SWEEP1. Therefore, controlling the off of the driving transistor T0 using the second comparison reference signal SWEEP2 ensures that the driving transistor T0 is turned off in a timely manner, thereby ensuring that the micro-LED stops emitting light in a timely manner, thereby improving the accuracy of the light emission control of the micro-LED driving circuit.

[0066] In one embodiment, for the calibration unit 111, in one implementation, FIG3 is a structural diagram of another micro LED driving circuit provided in Example 1 of the present application. As shown in FIG3, the calibration unit 111 includes: a first capacitor C1 and a first transistor T1;

[0067] One end of the first capacitor C1 is connected to the second comparison reference signal SWEEP2, and the other end of the first capacitor C1 is connected to the source of the first transistor T1;

[0068] The gate of the first transistor T1 is connected to the output terminal of the signal generating module 10 , and the drain of the first transistor T1 is connected to the control terminal of the driving transistor T0 , and is configured to be turned on or off in response to the PWM signal.

[0069] In actual applications, the first transistor T1 is turned on or off in response to the PWM signal. For example, the first transistor T1 is turned on in response to a first level state and turned off in response to a second level state. When the PWM signal is at the first level state, the first transistor T1 is turned on and transmits the second comparison reference signal to the control terminal of the driving transistor T0. When the PWM signal is at the second level state, the first transistor T1 is turned off and cannot transmit the second comparison reference signal to the control terminal of the driving transistor T0.

[0070] In this embodiment, the first transistor T1 is turned on or off in response to the PWM signal. When turned on, the control terminal of the driving transistor T0 is connected to the second comparison reference signal SWEEP2 via the turned-on first transistor T1 and the first capacitor C1. Based on the second comparison reference signal SWEEP2, the driving transistor T0 can be timely controlled to be turned off, thereby improving the accuracy of the light emission control of the micro LED driving circuit.

[0071] In addition, for the calibration unit 111, in one embodiment, FIG4 is a structural diagram of another micro LED driving circuit provided in an embodiment of the present application. As shown in FIG4, the calibration unit 111 further includes: a second transistor T2.

[0072] The drain of the second transistor T2 is connected to the control terminal of the driving transistor T0 , the gate of the second transistor T2 receives the row scan signal SN, and the source of the second transistor T2 receives the PAMD signal, and is used to be turned on or off in response to the row scan signal SN.

[0073] In practical applications, the PAMD signal is a voltage value when the luminous brightness is maximum. When the second transistor T2 is turned on, the voltage at the control terminal of the driving transistor T0 is set to a voltage value corresponding to the PAMD signal.

[0074] In this embodiment, the second transistor T2 is turned on or off in response to the row scan signal SN. When turned on, the voltage at the control terminal of the driving transistor T0 is set to a voltage value corresponding to the PAMD signal.

[0075] In addition, for the driving module 11, in one embodiment, FIG5 is a structural diagram of another micro LED driving circuit provided in Example 1 of the present application. As shown in FIG5, based on FIG4, the driving module 11 further includes: a third transistor T3.

[0076] Among them, the gate of the third transistor T3 receives the above-mentioned light-emitting control signal EM, the source of the third transistor T3 is connected to the above-mentioned power supply signal VDD, and the drain of the third transistor T3 is connected to the source of the driving transistor T0, which is used to respond to the above-mentioned light-emitting control signal EM and control the connection and disconnection of the driving transistor T0 and the above-mentioned power supply signal VDD.

[0077] In conjunction with the above example, the on and off state of the driving transistor T0 is related to the output of the conduction current. Turning on the driving transistor T0 during the non-comparison light-emitting phase can affect the accuracy of the light emission of the micro-LED 12. It can be understood that a third transistor T3 is provided between the source of the driving transistor T0 and the power supply signal VDD. If the current operating phase of the micro-LED driving circuit is the comparison light-emitting phase, the third transistor T3 is turned on, and the source of the driving transistor T0 is connected to the power supply signal VDD via the third transistor T3. If the current operating phase of the micro-LED driving circuit is not the comparison light-emitting phase, the third transistor T3 is turned off, and the source of the driving transistor T0 is disconnected from the power supply signal VDD. This prevents the micro-LED 12 from emitting light during the non-comparison light-emitting phase due to the conduction of the driving transistor. This embodiment improves the accuracy of the light emission of the micro-LED 12.

[0078] In one embodiment, for the driving module 11, in one implementation, the driving module 11 further includes: a second capacitor;

[0079] One end of the second capacitor is connected to the power supply signal VDD, and the other end of the second capacitor is connected to the control end of the driving transistor T0.

[0080] In this embodiment, the second capacitor can ensure that the voltage at the control terminal of the driving transistor T0 is stable.

[0081] In the micro-LED driving circuit provided in this embodiment, the signal generating module is used to receive a light-emitting control signal and a first comparison reference signal, and output a PWM signal based on the light-emitting control signal and the first comparison reference signal; wherein the first comparison reference signal is a linearly increasing ramp signal; the PWM signal is a PWM signal with different pulse widths; the driving module is connected to the signal generating module, the driving module includes a driving transistor and a correction module, one end of the driving module is connected to the power supply signal, and the other end of the driving module is connected to the micro-LED, the correction unit receives a PAMD signal, a PWM signal, and a second comparison reference signal, and is used to transmit the second comparison reference signal to the control end of the driving transistor when the PWM signal is in a first level state, and to transmit the PAMD signal to the control end of the driving transistor when the PWM signal is in a second level state; wherein the second comparison reference signal has the same change trend as the first comparison reference signal; the micro-LED is connected to the driving module, and is used to receive a conduction current and a light-emitting control signal, and emit light in response to the control of the light-emitting control signal and the conduction current. In the solution of this embodiment, the second comparison reference signal has the same changing trend as the first comparison reference signal, and the PWM signal used to control the on and off of the driving transistor is generated based on the first comparison reference signal. Therefore, by controlling the off of the driving transistor through the second comparison reference signal, it can be ensured that the driving transistor is turned off in time, and then the micro LED can stop emitting light in time, thereby improving the accuracy of the light emission control of the micro LED driving circuit.

[0082] FIG6 is a schematic structural diagram of another micro LED driving circuit provided in an embodiment of the present application. As shown in FIG6 , the signal generating module 10 includes: a fourth transistor T4 and a comparison generating unit 101 .

[0083] In this embodiment, the gate of the fourth transistor T4 receives the first comparison reference signal SWEEP1 , the source of the fourth transistor T4 is connected to the input of the comparison generation unit 101 , and the drain of the fourth transistor T4 is connected to the output of the signal generation module 10 .

[0084] In this embodiment, the comparison generation unit 101 receives a row scan signal SN, and is configured to receive a PWMD signal through the input end of the comparison generation unit 101 based on the row scan signal SN, so that the source voltage of the fourth transistor T4 is a voltage corresponding to the PWMD signal, and the gate of the fourth transistor T4 is connected to the drain of the fourth transistor T4.

[0085] In this embodiment, the comparison generation unit 101 receives the above-mentioned light-emitting control signal EM, and is used to connect the first power supply voltage VGH to the input terminal of the comparison generation unit 101 based on the above-mentioned light-emitting control signal EM, so that the source voltage of the fourth transistor T4 is the above-mentioned first power supply voltage VGH, and compare the gate voltage of the fourth transistor T4 with the sum of the source voltage of the fourth transistor T4 and the threshold voltage of the fourth transistor T4, and output the above-mentioned PWM signal through the output terminal of the signal generation module 10 based on the comparison result.

[0086] In practical applications, the row scan signal SN is used to indicate whether the current operating phase of the micro-LED driver circuit is the row scan phase. For example, when the row scan signal SN is at a first level, the current operating phase of the micro-LED driver circuit is the row scan phase; when the row scan signal SN is at a second level, the current operating phase of the micro-LED driver circuit is not the row scan phase. In one embodiment, when the row scan signal SN is at the second level, the current operating phase of the micro-LED driver circuit is the row scan phase; when the row scan signal SN is at the first level, the current operating phase of the micro-LED driver circuit is not the row scan phase.

[0087] Wherein, PWMD is a voltage value that changes according to the brightness of the micro LED 12. When the scanning signal indicates that the current working stage of the micro LED driving circuit is the row scanning stage, the input terminal of the comparison generation unit 101 receives the PWMD signal, the source voltage of the fourth transistor T4 is PWMD, and the gate of the fourth transistor T4 is connected to the drain of the fourth transistor T4, and the voltage of the gate of the fourth transistor T4 and the drain of the fourth transistor T4 are equal to PWMD+V th4 , where V th4 It is understood that based on the row scanning signal SN, the comparison generation unit 101 realizes compensation for the threshold voltage of the fourth transistor T4, thereby preventing the threshold voltage of the fourth transistor T4 from affecting the comparison result of the subsequent comparison light emitting phase.

[0088] In actual applications, during the comparative light-emitting phase, the comparison generation unit 101 receives the light-emitting control signal EM. When the light-emitting control signal EM indicates that the current operating phase of the micro-LED driving circuit is the comparative light-emitting phase, the input terminal of the comparison generation unit 101 is connected to the first power supply voltage VGH, and the source voltage of the fourth transistor T4 is the first power supply voltage VGH. In combination with the above example, after the row scanning phase, the gate voltage of the fourth transistor T4 is equal to the drain voltage of the fourth transistor T4, both being PWMD+V th4 .

[0089] In this embodiment, in the comparison light-emitting stage, the gate of the fourth transistor T4 receives the first comparison reference signal SWEEP1, which is a linearly increasing ramp signal. Specifically, as the first comparison reference signal SWEEP1 increases, the gate voltage of the fourth transistor T4 increases. The gate voltage of the fourth transistor T4 can be expressed as PWMD+V th4 +ΔSWEEP1, where ΔSWEEP1 is the variation of the first comparison reference signal SWEEP1. th4 +ΔSWEEP1 is less than VGH+V th4 When PWMD+V th4 +ΔSWEEP1 is greater than VGH+V th4 When , the fourth transistor T4 is turned off, and the output end of the signal generating module 10 outputs a PWM signal in the first level state.

[0090] In actual applications, in the row scanning stage, the comparison generation unit 101 compensates the threshold voltage of the fourth transistor T4 based on the row scanning signal SN; in the comparison light-emitting stage, based on the light-emitting control signal EM, the gate voltage of the fourth transistor T4 is compared with the sum of the source voltage of the fourth transistor T4 and the threshold voltage of the fourth transistor T4, and the above-mentioned PWM signal is output through the output end of the signal generation module 10 based on the comparison result.

[0091] In one embodiment, for the comparison generation unit 101, in one implementation, Figure 7 is a structural schematic diagram of another micro LED driving circuit provided in Example 2 of the present application. As shown in Figure 7, the comparison generation unit 101 includes: a fifth transistor T5, a sixth transistor T6, a seventh transistor T7 and an eighth transistor T8.

[0092] Among them, the source of the fifth transistor T5 is connected to the first power supply voltage VGH, the gate of the fifth transistor T5 receives the above-mentioned light-emitting control signal EM, and the drain of the fifth transistor T5 is connected to the source of the sixth transistor T6 and the source of the fourth transistor T4, and is used to be turned on or off in response to the above-mentioned light-emitting control signal EM.

[0093] In actual applications, when the light-emitting control signal EM indicates that the current working stage of the micro-LED driving circuit is the comparative light-emitting stage, the fifth transistor T5 is turned on, and the input end of the comparison generation unit is connected to the first power supply voltage VGH via the turned-on fifth transistor T5, and the source of the fourth transistor T4 is set to the first power supply voltage VGH.

[0094] The gate of the sixth transistor T6 receives the row scan signal SN, and the drain of the sixth transistor T6 receives the PWMD signal, so as to be turned on or off in response to the row scan signal SN.

[0095] In actual applications, when the row scan signal SN indicates that the current working stage of the micro LED driving circuit is the scanning stage, the sixth transistor T6 is turned on, and the input end of the comparison generation unit receives the PWMD signal through the turned-on sixth transistor T6, and sets the source of the fourth transistor T4 to the voltage corresponding to the PWMD signal.

[0096] The gate of the seventh transistor T7 receives the above-mentioned row scanning signal SN, the source of the seventh transistor T7 is connected to the gate of the fourth transistor T4, and the drain of the seventh transistor T7 is connected to the drain of the fourth transistor T4 and the source of the eighth transistor T8. The seventh transistor T7 is configured to be turned on or off in response to the above-mentioned light-emitting control signal EM, and to connect the gate of the fourth transistor T4 to the drain of the fourth transistor T4 when turned on.

[0097] In actual applications, when the row scan signal SN indicates that the current working stage of the micro LED driving circuit is the scanning stage, the seventh transistor T7 is turned on, and the gate of the fourth transistor T4 and the drain of the fourth transistor T4 are connected via the turned-on seventh transistor T7 to form a diode structure, so that the gate voltage of the fourth transistor T4 is equal to the drain voltage of the fourth transistor T4.

[0098] The gate of the eighth transistor T8 receives the light emitting control signal EM, and the drain of the eighth transistor T8 is connected to the second power supply voltage VGL, so as to be turned on or off in response to the light emitting control signal EM.

[0099] In practical applications, when the light control signal EM indicates that the current working stage of the micro LED driving circuit is the comparative light emitting stage, the eighth transistor T8 is turned on, and the output end of the signal generating module is connected to the second power supply voltage VGL via the turned-on eighth transistor T8.

[0100] During the comparison light-emitting phase, as the first comparison reference signal SWEEP1 increases, the gate voltage of the fourth transistor T4 increases. The gate voltage of the fourth transistor T4 can be expressed as PWMD+V th4 +ΔSWEEP1, where ΔSWEEP1 is the variation of the first comparison reference signal SWEEP1. th4 +ΔSWEEP1 is less than VGH+V th4 When the fourth transistor T4 is turned on, the output end of the signal generating module 10 is connected to the first power supply voltage VGH via the turned-on fourth transistor T4 and the turned-on fifth transistor T5, and the output end of the signal generating module 10 outputs the PWM signal of the second level state; PWMD+V th4 +ΔSWEEP1 is greater than VGH+V th4 When the fourth transistor T4 is turned off, the output end of the signal generating module 10 is connected to the reference second power supply voltage VGL via the turned-on eighth transistor T8, and the output end of the signal generating module 10 outputs a PWM signal of the first level state.

[0101] In this embodiment, in the row scanning stage, the sixth transistor T6 and the seventh transistor T7 compensate for the threshold voltage of the fourth transistor T4 based on the row scanning signal SN; in the comparative light-emitting stage, the fifth transistor T5 and the eighth transistor T8 are turned on in response to the light-emitting control signal EM, and compare the gate voltage of the fourth transistor T4 with the sum of the source voltage of the fourth transistor T4 and the threshold voltage of the fourth transistor T4, and output the above-mentioned PWM signal through the output end of the signal generation module 10 based on the comparison result.

[0102] In one embodiment, for the comparison generation unit 101, in one implementation manner, FIG8 is a structural diagram of another micro LED driving circuit provided in Example 2 of the present application. As shown in FIG8, the comparison generation unit 101 further includes: a third capacitor C3.

[0103] One end of the third capacitor C3 receives the first comparison reference signal SWEEP1 , and the other end of the third capacitor C3 is connected to the gate of the fourth transistor T4 .

[0104] In combination with the above example, in the row scanning phase, the comparison generation unit 101 receives the PWMD signal through the input terminal of the comparison generation unit 101 based on the row scanning signal SN, so that the source voltage of the fourth transistor T4 is the voltage corresponding to the PWMD signal, and the gate of the fourth transistor T4 is connected to the drain of the fourth transistor T4. For example, at the start of the row scanning phase, the gate voltage of the fourth transistor T4 is higher than PWMD+V th4, the gate of the fourth transistor T4 discharges to the third capacitor C3 until the gate voltage of the fourth transistor T4 is PWMD+V th4 , achieving compensation for the threshold voltage of the fourth transistor T4. In one embodiment, at the start of the row scanning phase, the gate voltage of the fourth transistor T4 is lower than PWMD+V th4 , the third capacitor C3 discharges to the gate of the fourth transistor T4 until the gate voltage of the fourth transistor T4 is PWMD+V th4 , achieving compensation for the threshold voltage of the fourth transistor T4.

[0105] In actual applications, during the row scanning phase, the fourth transistor T4 receives the first comparison reference signal SWEEP1 via the third capacitor C3. As the first comparison reference signal SWEEP1 increases, the gate voltage of the fourth transistor T4 increases. The comparison generation unit 101 compares the gate voltage of the fourth transistor T4 with the sum of the source voltage of the fourth transistor T4 and the threshold voltage of the fourth transistor T4, and outputs the aforementioned PWM signal via the output terminal of the signal generation module 10 based on the comparison result.

[0106] In this embodiment, the gate of the fourth transistor T4 receives the first comparison reference signal SWEEP1 via the third capacitor C3. During the row scan phase, the third capacitor C3 compensates for the threshold voltage of the fourth transistor T4. During the comparison light-emitting phase, as the first comparison reference signal SWEEP1 increases, the gate voltage of the fourth transistor T4 increases through the coupling effect of the third capacitor C3. The PWM signal is generated by comparing the gate voltage of the fourth transistor T4 with the source voltage of the fourth transistor T4 and the threshold voltage of the fourth transistor T4.

[0107] In one embodiment, a fourth capacitor C4 may be provided to filter the PWM signal. Regarding the comparison generation unit 101, in one embodiment, FIG9 is a schematic structural diagram of another micro-LED driving circuit provided in Example 2 of the present application. As shown in FIG9 , the comparison generation unit 101 further includes: a fourth capacitor C4.

[0108] One end of the fourth capacitor C4 is connected to the power supply signal VDD, and the other end of the fourth capacitor C4 is connected to the output end of the signal generating module 10 .

[0109] In the above example, the comparison generation unit 101 outputs a PWM signal by comparing the gate voltage of the fourth transistor T4 with the sum of the source voltage of the fourth transistor T4 and the threshold voltage of the fourth transistor T4. When the comparison result changes, the level of the PWM signal changes. In this embodiment, the fourth capacitor C4 is used to filter the PWM signal.

[0110] In one embodiment, the signal generating module 10 further includes: an initialization unit;

[0111] The initialization unit is connected to the fourth transistor T4 and is configured to receive a reset signal and initialize the micro LED driving circuit based on the reset signal.

[0112] The reset signal is used to indicate whether the current working stage of the micro LED driver circuit is the reset stage. For example, when the reset signal is at the first level, the current working stage of the micro LED driver circuit is the reset stage; when the reset signal is at the second level, the current working stage of the micro LED driver circuit is not the reset stage.

[0113] Specifically, when the reset signal indicates that the working phase of the micro LED driving circuit is the reset phase, the initialization unit initializes the micro LED driving circuit.

[0114] In this embodiment, the initialization unit responds to the reset signal and can initialize the micro LED driving circuit during the reset phase.

[0115] In one implementation, the initialization unit includes: a ninth transistor.

[0116] The source of the ninth transistor is connected to the reference power supply voltage, the gate of the ninth transistor receives the reset signal, and the drain of the ninth transistor is connected to the gate of the fourth transistor T4, for being turned on or off in response to the reset signal.

[0117] It can be understood that when the reset signal indicates that the current working stage of the micro LED driving circuit is the reset stage, the ninth transistor is turned on, and the gate of the fourth transistor T4 is connected to the above-mentioned reference power supply voltage REF via the turned-on ninth transistor, that is, the gate voltage of the fourth transistor T4 is set to the reference power supply voltage REF.

[0118] In this embodiment, the comparison and generation unit compensates for the threshold voltage of the fourth transistor based on the row scan signal SN, and compares the gate voltage of the fourth transistor with the sum of the source voltage of the fourth transistor and the threshold voltage of the fourth transistor based on the light emission control signal. Based on the comparison result, the PWM signal is output through the output terminal of the signal generation module. The driving module controls the on or off duration of the driving transistor based on the PWM signal, thereby controlling the output duration of the on-current.

[0119] FIG10 is a schematic structural diagram of a micro LED driving circuit provided in an embodiment of the present application. As shown in FIG10 , the present embodiment provides a micro LED driving circuit, including: a signal generating module 10 , a driving module 11 and a micro LED 12 .

[0120] In this embodiment, the driving module 11 includes: a driving transistor T0, a first capacitor C1, a second capacitor C2, a first transistor T1, a second transistor T2, and a third transistor T3; the signal generating module 10 includes: a fourth transistor T4, a fifth transistor T5, a sixth transistor T6, a seventh transistor T7, an eighth transistor T8, and a ninth transistor T9, a third capacitor C3, and a fourth capacitor C4. The reset signal is RESET, the row scan signal is SN, the comparison reference signal is SWEEP, the light-emitting control signal is EM, the power supply signal is VDD, the first power supply voltage is VGH, the second power supply voltage is VGL, and the reference power supply voltage is REF.

[0121] In one example, the transistor is turned on in response to a signal in a first level state, and is turned off in response to a signal in a second level state.

[0122] For example, the transistors are all P-type thin film transistors, the first level state is a low level, and the second level state is a high level. Correspondingly, the anode of the micro LED 12 is connected to the drain of the driving transistor T0, and the anode of the micro LED 12 receives the light emission control signal EM.

[0123] In one embodiment, the above transistors are all N-type thin film transistors, the first level state is a high level, and the second level state is a low level.

[0124] In one embodiment, in one example, the working phases of the micro LED driving circuit are divided into: an initialization phase, a row scanning phase, and a comparative light emitting phase.

[0125] In this example, in the initialization stage, the reset signal is in the first level state, and the row scan signal SN and the light-emitting control signal EM are in the second level state; in the row scan stage, the row scan signal SN first changes from the second level state to the first level state, and then changes from the first level state to the second level state; the reset signal and the light-emitting control signal EM are in the second level state; in the comparative light-emitting stage, the light-emitting control signal EM is in the first level state, and the reset signal and the row scan signal SN are in the second level state.

[0126] To facilitate understanding of the operation of the micro-LED driver circuit, the following examples illustrate the embodiments of this application. For example, the aforementioned transistors are all P-type thin-film transistors, which are turned on in response to a low-level signal and turned off in response to a high-level signal. The states of the various signals are shown in Figure 11, which is a signal state diagram provided in Example 3 of this application.

[0127] 11 , in the initialization phase, the reset signal is in a low level state, the row scan signal SN and the light emitting control signal EM are in a high level state; the ninth transistor T9 is turned on in response to the reset signal, and the remaining transistors are turned off. The ninth transistor T9 is turned on to set the gate voltage of the fourth transistor T4 to the reference power supply voltage REF.

[0128] In conjunction with Figure 11, in the above-mentioned row scanning phase, the above-mentioned row scanning signal SN first changes from a high level state to a low level state, and then changes from a low level state to a high level state; the above-mentioned reset signal and the above-mentioned light-emitting control signal EM are in a high level state; the second transistor T2, the sixth transistor T6, and the seventh transistor T7 are first turned on and then turned off in response to the row scanning signal SN, the fourth transistor T4 is turned on, and the remaining transistors are turned off. The second transistor T2 is turned on, setting the gate voltage of the driving transistor T0 to PAMD; the sixth transistor T6 is turned on, setting the source voltage of the fourth transistor T4 to PWMD; the seventh transistor T7 is turned on, connecting the gate of the fourth transistor T4 to the drain of the fourth transistor T4, forming a diode structure between points A and B; the gate voltage of the fourth transistor T4 and the drain voltage of the fourth transistor T4 are set to PWMD+V through the third capacitor C3. th4 .

[0129] 11 , in the comparative light-emitting stage, the light-emitting control signal EM is in a low-level state, the reset signal and the row scan signal SN are in a high-level state, the third transistor T3, the fifth transistor T5, and the eighth transistor T8 are turned on in response to the light-emitting control signal EM, and the second transistor T2, the sixth transistor T6, the seventh transistor T7, and the ninth transistor T9 are turned off.

[0130] Specifically, as the first comparison reference signal SWEEP1 increases, when PWMD+V th4 +ΔSWEEP1 is less than VGH+V th4 When the fourth transistor T4 is turned on, the output end of the signal generating module 10 is connected to the first power supply voltage VGH via the turned-on fourth transistor T4 and the turned-on fifth transistor T5. The output end of the signal generating module 10 outputs a PWM signal in the second level state. The first transistor T1 is turned off. The gate voltage of the driving transistor T0 is the voltage corresponding to the PAMD signal, the transistor T0 is driven, and the micro LED 12 emits light.

[0131] Correspondingly, as the first comparison reference signal SWEEP1 increases, when PWMD+V th4 +ΔSWEEP1 is greater than VGH+V th4When the fourth transistor T4 is turned off, the output end of the signal generating module 10 is connected to the second power supply voltage VGL via the conductive eighth transistor T8, the output end of the signal generating module 10 outputs the PWM signal of the second level state, the first transistor T1 is turned on, and the gate of the driving transistor T0 is connected to the second comparison reference signal SWEEP2 via the conductive first transistor T1 and the first capacitor. The second comparison reference signal SWEEP2 has the same change trend as the first comparison reference signal SWEEP1. As the second comparison reference signal SWEEP2 increases, the driving transistor T0 is turned off, and the micro LED 12 stops emitting light.

[0132] In the micro-LED driving circuit provided in this embodiment, the signal generating module is used to receive a light-emitting control signal and a first comparison reference signal, and output a PWM signal based on the light-emitting control signal and the first comparison reference signal; wherein the first comparison reference signal is a linearly increasing ramp signal; the PWM signal is a PWM signal with different pulse widths; the driving module is connected to the signal generating module, the driving module includes a driving transistor and a correction module, one end of the driving module is connected to the power supply signal, and the other end of the driving module is connected to the micro-LED, the correction unit receives a PAMD signal, a PWM signal, and a second comparison reference signal, and is used to transmit the second comparison reference signal to the control end of the driving transistor when the PWM signal is in a first level state, and to transmit the PAMD signal to the control end of the driving transistor when the PWM signal is in a second level state; wherein the second comparison reference signal has the same change trend as the first comparison reference signal; the micro-LED is connected to the driving module, and is used to receive a conduction current and a light-emitting control signal, and emit light in response to the control of the light-emitting control signal and the conduction current. In the solution of this embodiment, the second comparison reference signal has the same changing trend as the first comparison reference signal, and the PWM signal used to control the on and off of the driving transistor is generated based on the first comparison reference signal. Therefore, by controlling the off of the driving transistor through the second comparison reference signal, it can be ensured that the driving transistor is turned off in time, and then the micro LED can stop emitting light in time, thereby improving the accuracy of the light emission control of the micro LED driving circuit.

[0133] In the micro-LED driving circuit of the related art as shown in Figure 1, in actual application, the transistor Ta is turned on in response to the light-emitting control signal EM, and the signal generation module 01 outputs the PWM signal to the transistor Tb. When the PWM signal is in a low-level state, the transistor Tb is turned on, and the control end of the driving transistor Tc is connected to the power supply signal VDD, the driving transistor Tc is turned off, and the micro-LED does not emit light; when the PWM signal is in a high-level state, the transistor Tb is turned off, and the control end of the driving transistor Tc is connected to the PAMD signal, the driving transistor Tc is turned on, and the micro-LED emits light.

[0134] To illustrate this in a practical scenario, one end of the signal generation module is connected to the first power supply voltage VGH, and the other end is connected to the second power supply voltage VGL. When the output of signal generation module 01 outputs a low-level PWM signal, the micro-LED does not emit light, the transistor inside signal generation module 01 does not need to be turned on to connect to the first power supply voltage VGH, and no current flows within signal generation module 01. When the output of signal generation module 01 outputs a high-level PWM signal, the micro-LED emits light, and the transistor inside signal generation module 01 is turned on to connect to the first power supply voltage VGH, causing current to flow within signal generation module 01. In practical applications, the presence of current in the driver circuit in addition to the micro-LED conduction current increases the power consumption of the driver circuit. In related technologies, the power consumption of the driver circuit is relatively high.

[0135] Figure 12 is a structural schematic diagram of another micro LED driving circuit provided in an embodiment of the present application. As shown in Figure 12, this embodiment provides a micro LED driving circuit, including: a signal generating module 10, a driving module 11 and a micro LED 12; wherein, the driving module 11 includes a driving transistor T0 and a control unit 111.

[0136] Among them, the signal generating module 10 is used to receive the light-emitting control signal EM and the first comparison reference signal SWEEP1, and output a PWM signal based on the above-mentioned light-emitting control signal EM and the above-mentioned first comparison reference signal SWEEP1; wherein the above-mentioned first comparison reference signal SWEEP1 is a linearly decreasing ramp signal; the above-mentioned PWM signal is a signal with different pulse widths.

[0137] Among them, the driving module 11 is connected to the signal generating module 10, and the driving module 10 includes a driving transistor T0 and a control unit 111. One end of the driving module 11 is connected to the power supply signal VDD, and the other end of the driving module 11 is connected to the micro LED 12; the control unit 111 is connected to the control end of the driving transistor T0, and the control unit 111 receives the PAMD signal, the PWM signal and the second comparison reference signal SWEEP2, and is used to transmit the superimposed signal of the PAMD signal and the second comparison reference signal SWEEP2 to the control end of the driving transistor T0 when the PWM signal is in a first level state; and when the PWM signal is in a second level state, transmit the second comparison reference signal SWEEP2 to the control end of the driving transistor T0; wherein the second comparison reference signal SWEEP2 is an inverted signal of the first comparison reference signal SWEEP1; the driving transistor T0 is turned on in response to the superimposed signal of the above-mentioned PAMD signal and the above-mentioned second comparison reference signal SWEEP2, and is turned off in response to the above-mentioned second comparison reference signal SWEEP2.

[0138] The micro LED 12 is connected to the driving module 11 , and is configured to receive the conduction current and the light-emitting control signal EM, and emit light in response to the light-emitting control signal EM and the conduction current.

[0139] In this embodiment, the driving process is similar to that of the micro-LED driver circuit shown in FIG2 , and is divided into three phases: an initialization phase, a row scanning phase, and a comparative light-emission phase. During the initialization phase, the input terminal of the signal generation module 10 is set to the reference power supply voltage REF. During the row scanning phase, the signal generation module 10 receives the PWMD signal and sets the input terminal and the output terminal of the signal generation module 10 to approximately the PWMD voltage.

[0140] The light-emission control signal EM is used to control the operating phase of the micro-LED driver circuit, determining whether it is in the comparative light-emission phase. For example, when the light-emission control signal EM is at a first level, the micro-LED driver circuit is currently operating in the comparative light-emission phase; when the light-emission control signal EM is at a second level, the micro-LED driver circuit is not currently operating in the comparative light-emission phase. It will be understood that when the signal generation module 10 receives the light-emission control signal EM and the light-emission control signal EM is at the first level, the micro-LED driver circuit is currently operating in the comparative light-emission phase, and the signal generation module begins outputting a PWM signal to the driver module 11.

[0141] At the beginning of the comparison light-emitting stage, the input end of the signal generating module 10 receives the first comparison reference signal SWEEP1, which is a linearly decreasing ramp signal; the output end of the signal generating module 10 is connected to the control unit 111, and the signal generating module 10 outputs a PWM signal in a first level state to the control unit 111; the control unit 111 receives the PAMD signal and the second comparison reference signal SWEEP2, and the control unit 111 responds to the PWM signal in the first level state, and transmits the superimposed signal of the above-mentioned PAMD signal and the second comparison reference signal SWEEP2 to the control end of the driving transistor T0 to control the driving transistor T0 to turn on, and the micro LED 12 starts to emit light.

[0142] Some time after the comparative light-emitting phase begins, because the level of the first comparison reference signal SWEEP1 remains relatively high, the signal generation module 10 continues to output a PWM signal at the first level. Therefore, the control unit 111 continues to transmit the superimposed signal of the PAMD signal and the second comparison reference signal SWEEP2 to the control terminal of the driving transistor T0, thereby turning on the driving transistor T0 and maintaining the light emission of the micro LED 12. As the first comparison reference signal SWEEP1 gradually decreases until the level of the first comparison reference signal SWEEP1 is lower, the signal generation module 10 outputs a PWM signal at the second level, and the control unit 111 transmits the second comparison reference signal SWEEP2 to the control terminal of the driving transistor T0. The second comparison reference signal SWEEP2 is a linearly increasing ramp signal with an opposite phase to the first comparison signal SWEEP1. As the second comparison reference signal SWEEP2 increases, the driving transistor T0 is turned off, and the micro LED 12 stops emitting light.

[0143] It will be understood that one end of the driver module 11 is connected to the power supply signal VDD and the other end is connected to the micro-LED 12. When the driver transistor T0 is on, the driver module 11 provides a conduction current to the micro-LED 12; when the driver transistor T0 is off, the driver module 11 stops providing the conduction current to the micro-LED 12. In this embodiment, the micro-LED 12 is connected to the driver module 11 to receive the conduction current and the emission control signal EM, and to emit light in response to the emission control signal EM and the conduction current. It will be understood that the micro-LED 12 will only emit light when the emission control signal EM indicates that the current operating stage of the micro-LED driver circuit is the comparative emission stage and the driver module 11 outputs the conduction current to the micro-LED 12.

[0144] In actual applications, during the comparison light-emitting phase, the signal generation module 10 outputs a PWM signal based on the first comparison reference signal SWEEP1. For example, when the first comparison reference signal SWEEP1 is greater than a preset threshold, the signal generation module 10 outputs a PWM signal at a first level. When the first comparison reference signal SWEEP2 is less than the preset threshold, the signal generation module 10 outputs a PWM signal at a second level.

[0145] In this embodiment, the second comparison reference signal SWEEP2 is applied synchronously with the first comparison reference signal SWEEEP1, and the second comparison reference signal SWEEP2 is in antiphase with the first comparison reference signal SWEEEP1. The first comparison reference signal SWEEEP1 is a linearly decreasing ramp signal, while the second comparison reference signal SWEEP2 is a linearly increasing ramp signal. Accordingly, when the first comparison reference signal SWEEP1 is greater than a preset threshold, the synchronous second comparison reference signal SWEEP2 remains relatively low, minimally affecting the voltage at the control terminal of the driving transistor T0 and preventing a change in the conduction state of the driving transistor T0. The driving transistor T0 remains conductive, and the micro-LED continues to emit light. When the first comparison reference signal SWEEP1 drops below the preset threshold, causing the level of the PWM signal to change, the second comparison reference signal SWEEP2 rises to a certain voltage, enabling the second comparison reference signal SWEEP2 to control the driving transistor T0 to turn off, turning off the driving transistor T0 and stopping the micro-LED from emitting light.

[0146] In the comparative light-emitting stage, when the micro-LED emits light, the first comparison reference signal SWEEP1 maintains a relatively high level state, so the signal generating module 10 outputs a PWM signal in the first level state. In actual applications, the driving transistor T0 is a P-type thin-film transistor, and the signal generating module 10 outputs a low-level PWM signal to make the micro-LED 12 emit light. Therefore, the internal transistor of the signal generating module 10 does not need to be turned on to transmit the first power supply voltage VGH to the output end of the signal generating module 10, and there is no current inside the signal generating module 10; conversely, when the micro-LED stops emitting light, the signal generating module 10 outputs a high-level PWM signal, and the internal transistor of the signal generating module 10 is turned on to transmit the first power supply voltage VGH to the output end of the signal generating module 10; in actual applications, in the comparative light-emitting stage, the micro-LED emits light longer than the micro-LED does not emit light. When the micro-LED does not emit light, the internal transistor of the signal generating module 10 is turned on, which reduces the on-time of the internal transistor of the signal generating module 10 and reduces the power consumption of the micro-LED driving circuit.

[0147] In one embodiment, for the control unit 111, in one implementation manner, FIG13 is a structural diagram of another micro LED driving circuit provided in an embodiment of the present application. As shown in FIG13, the control unit 111 further includes: a fifth capacitor C5;

[0148] One end of the fifth capacitor C5 is connected to the second comparison reference signal SWEEP2 , and the other end of the fifth capacitor C5 is connected to the control end of the driving transistor T0 .

[0149] In practical applications, when the second comparison reference signal SWEEP2 changes, the signal at the control terminal of the driving transistor T0 changes. For example, the change in the voltage at the control terminal of the driving transistor T0 can be represented as ΔSWEEP2. Exemplarily, the driving transistor T0 is a P-type thin-film transistor. The control terminal of the driving transistor T0 is a gate connected to the second comparison reference signal SWEEP2 via a fifth capacitor C5. The source of the driving transistor T0 is connected to the power supply signal VDD. The drain of the driving transistor T0 is connected to the aforementioned micro LED 12. When the driving transistor T0 is turned on, it provides a conduction current to the micro LED 12.

[0150] In conjunction with the above example, when the PWM signal received by the control unit 111 is at a first level, the superposition of the PAMD signal and the second comparison signal SWEEP2 is transmitted to the control terminal of the driving transistor T0. Furthermore, when the PWM signal received by the control unit 111 is at a second level, the second comparison signal SWEEP2 is transmitted to the control terminal of the driving transistor T0. Based on the coupling effect of the fifth capacitor C5, the voltage at the control terminal of the driving transistor T0 is adjusted as the second comparison reference signal SWEEP2 changes.

[0151] In this embodiment, the control terminal of the driving transistor T0 receives the second comparison reference signal SWEEP2 via the fifth capacitor C5 , and the voltage of the control terminal of the driving transistor T0 is adjusted by utilizing the coupling effect of the fifth capacitor C5 .

[0152] In addition, for the control unit 111, in one embodiment, FIG14 is a structural diagram of another micro LED driving circuit provided in an embodiment of the present application. As shown in FIG14, the control unit 111 further includes: a tenth transistor T10.

[0153] The source of the tenth transistor T10 receives the PAMD signal, the gate of the tenth transistor T10 is connected to the output end of the signal generating module 10, and the drain of the tenth transistor T10 is connected to the control end of the driving transistor T0, and is used to be turned on or off in response to the above PWM signal.

[0154] In actual applications, the second comparison reference signal SWEEP2 is not restricted by the PWM signal and is transmitted to the control terminal of the driving transistor T0. Regarding the PAMD signal, when the PWM signal is at a first level, the tenth transistor T10 is turned on and transmits the PAMD signal to the control terminal of the driving transistor T0. The signal transmitted to the control terminal of the driving transistor T0 is a superposition of the PAWD signal and the second comparison reference signal SWEEP2. When the PWM signal is at a second level, the tenth transistor T10 is turned off, and the PAMD signal cannot be transmitted to the control terminal of the driving transistor T0. The signal transmitted to the control terminal of the driving transistor T0 is the second comparison reference signal SWEEP2.

[0155] In this embodiment, the tenth transistor T10 is turned on or off in response to the PWM signal to control whether the PAWD signal is transmitted to the control terminal of the driving transistor T0 , thereby controlling the signal transmitted to the control terminal of the driving transistor T0 .

[0156] In addition, for the control unit 111, in one embodiment, FIG15 is a structural diagram of another micro LED driving circuit provided in Example 1 of the present application. As shown in FIG15, the control unit 111 further includes: an eleventh transistor T11.

[0157] Among them, the gate of the eleventh transistor T11 receives the above-mentioned light-emitting control signal EM, the source of the eleventh transistor T11 is connected to the above-mentioned power supply signal VDD, and the drain of the eleventh transistor T11 is connected to the source of the driving transistor T0, and is used to respond to the above-mentioned light-emitting control signal EM and control the connection and disconnection of the driving transistor T0 and the above-mentioned power supply signal VDD.

[0158] In conjunction with the above example, the on and off state of the driving transistor T0 is related to the output of the conduction current. Turning on the driving transistor T0 during the non-comparison light-emitting phase can affect the accuracy of the light emission of the micro-LED 12. It can be understood that an eleventh transistor T11 is provided between the source of the driving transistor T0 and the power supply signal VDD. When the current operating phase of the micro-LED driving circuit is the comparison light-emitting phase, the eleventh transistor T11 is turned on, and the source of the driving transistor T0 is connected to the power supply signal VDD via the conduction of the eleventh transistor T11. When the current operating phase of the micro-LED driving circuit is not the comparison light-emitting phase, the eleventh transistor T11 is turned off, and the source of the driving transistor T0 is disconnected from the power supply signal VDD. This prevents the micro-LED 12 from emitting light during the non-comparison light-emitting phase due to the conduction of the driving transistor. This embodiment improves the accuracy of the light emission of the micro-LED 12.

[0159] In the micro-LED driving circuit provided in this embodiment, a signal generating module receives a light-emission control signal and a first comparison reference signal, and outputs a PWM signal based on the light-emission control signal and the first comparison reference signal. The first comparison reference signal is a linearly decreasing ramp signal. The PWM signal is a signal with different pulse widths. A driving module is connected to the signal generating module, and the driving module includes a driving transistor and a control unit. One end of the driving module is connected to the power supply signal, and the other end of the driving module is connected to the micro-LED. The control unit is connected to the control end of the driving transistor, and the control unit receives a PAMD signal, a PWM signal, and a second comparison reference signal. The control unit is configured to transmit a superposition signal of the PAMD signal and the second comparison reference signal to the control end of the driving transistor when the PWM signal is at a first level; and transmit the second comparison reference signal to the control end of the driving transistor when the PWM signal is at a second level. The second comparison reference signal is an inverted signal of the first comparison reference signal. The driving transistor is turned on in response to the superposition signal of the PAMD signal and the second comparison reference signal, and is turned off in response to the second comparison reference signal. The micro-LED is connected to the driving module, receives a conduction current and a light-emission control signal, and emits light in response to the light-emission control signal and the conduction current. In the solution of this embodiment, the second comparison reference signal and the first comparison reference signal are applied synchronously, and the second comparison reference signal and the first comparison reference signal are in antiphase. In the comparison light-emitting stage, when the first comparison reference signal is larger, the signal generating module generates a PWM signal in a first level state, and the micro-LED emits light. At this time, the internal transistor of the signal generating module does not need to be turned on to transmit the power supply voltage to the output end of the signal generating module, and there is no current inside the signal generating module; correspondingly, when the first comparison reference signal is smaller, the signal generating module generates a PWM signal in a second level state, and the micro-LED stops emitting light. At this time, the internal transistor of the signal generating module is turned on to transmit the power supply voltage to the output end of the signal generating module, and there is current inside the signal generating module; in practice, the micro-LED emits light time longer than the micro-LED does not emit light time. When the micro-LED does not emit light, the internal transistor of the signal generating module is turned on, which reduces the on-time of the internal transistor of the signal generating module and reduces the power consumption of the micro-LED driving circuit.

[0160] FIG16 is a schematic structural diagram of another micro LED driving circuit provided in an embodiment of the present application. As shown in FIG16 , the signal generating module 10 includes: a fourth transistor T4 and a comparison generating unit 101 .

[0161] The gate of the fourth transistor T4 receives the first comparison reference signal SWEEP1 , the source of the fourth transistor T4 is connected to the input of the comparison generation unit 101 , and the drain of the fourth transistor T4 is connected to the output of the signal generation module 10 .

[0162] Among them, the comparison generation unit 101 receives the row scan signal SN, and is used to receive the PWMD signal through the input end of the above-mentioned comparison generation unit 101 based on the above-mentioned row scan signal SN, so that the source voltage of the above-mentioned fourth transistor T4 is the voltage corresponding to the PWMD signal, and the gate of the above-mentioned fourth transistor T4 is connected to the drain of the above-mentioned fourth transistor T4.

[0163] The comparison generation unit 101 receives the light-emitting control signal EM and is configured to connect the first power supply voltage VGH to the input terminal of the comparison generation unit 101 based on the light-emitting control signal EM, so that the source voltage of the fourth transistor T4 is the first power supply voltage VGH, compare the gate voltage of the fourth transistor T4 with the sum of the source voltage of the fourth transistor T4 and the threshold voltage of the fourth transistor T4, and output the PWM signal through the output terminal of the signal generation module 10 based on the comparison result.

[0164] In practical applications, the row scan signal SN is used to indicate whether the current operating phase of the micro-LED driver circuit is the row scan phase. For example, when the row scan signal SN is at a first level, the current operating phase of the micro-LED driver circuit is the row scan phase; when the row scan signal SN is at a second level, the current operating phase of the micro-LED driver circuit is not the row scan phase. In one embodiment, when the row scan signal SN is at the second level, the current operating phase of the micro-LED driver circuit is the row scan phase; when the row scan signal SN is at the first level, the current operating phase of the micro-LED driver circuit is not the row scan phase.

[0165] Wherein, PWMD is a voltage value that changes according to the brightness of the micro LED 12. When the scanning signal indicates that the current working stage of the micro LED driving circuit is the row scanning stage, the input terminal of the comparison generation unit 101 receives the PWMD signal, the source voltage of the fourth transistor T4 is PWMD, and the gate of the fourth transistor T4 is connected to the drain of the fourth transistor T4, and the voltage of the gate of the fourth transistor T4 and the drain of the fourth transistor T4 are equal to PWMD+V th4 , where 4 is the threshold voltage of the fourth transistor T4. It can be understood that based on the row scanning signal SN, the comparison generation unit 101 compensates for the threshold voltage of the fourth transistor T4, thereby preventing the threshold voltage of the fourth transistor T4 from affecting the comparison result of the subsequent comparison light-emitting stage.

[0166] In actual applications, during the comparative light-emitting phase, the comparison generation unit 101 receives the light-emitting control signal EM. When the light-emitting control signal EM indicates that the current operating phase of the micro-LED driving circuit is the comparative light-emitting phase, the input terminal of the comparison generation unit 101 is connected to the first power supply voltage VGH, and the source voltage of the fourth transistor T4 is the first power supply voltage VGH. In combination with the above example, after the row scanning phase, the gate voltage of the fourth transistor T4 is equal to the drain voltage of the fourth transistor T4, both being PWMD+V th4 .

[0167] In this embodiment, in the comparison light-emitting stage, the gate of the fourth transistor T4 receives the first comparison reference signal SWEEP1, which is a linearly decreasing ramp signal. Specifically, as the first comparison reference signal SWEEP1 continues to decrease, the gate voltage of the fourth transistor T4 decreases. The gate voltage of the fourth transistor T4 can be expressed as PWMD+4+ΔSWEEP1, where ΔSWEEP1 is the change in the first comparison reference signal SWEEP1. When PWMD+V th4 +ΔSWEEP1 is greater than VGH+V th4 When PWMD+V th4 +ΔSWEEP1 is less than VGH+V th4 When , the fourth transistor T4 is turned on, and the output end of the signal generating module 10 outputs a PWM signal in the second level state.

[0168] In actual applications, in the row scanning stage, the comparison generation unit 101 compensates the threshold voltage of the fourth transistor T4 based on the row scanning signal SN; in the comparison light-emitting stage, based on the light-emitting control signal EM, the gate voltage of the fourth transistor T4 is compared with the sum of the source voltage of the fourth transistor T4 and the threshold voltage of the fourth transistor T4, and the above-mentioned PWM signal is output through the output end of the signal generation module 10 based on the comparison result.

[0169] In one embodiment, for the comparison generation unit 101, in one implementation, Figure 17 is a structural schematic diagram of another micro LED driving circuit provided in an embodiment of the present application. As shown in Figure 17, the comparison generation unit 101 includes: a fifth transistor T5, a sixth transistor T6, a seventh transistor T7 and an eighth transistor T8.

[0170] Among them, the source of the fifth transistor T5 is connected to the first power supply voltage VGH, the gate of the fifth transistor T5 receives the above-mentioned light-emitting control signal EM, and the drain of the fifth transistor T5 is connected to the source of the sixth transistor T6 and the source of the fourth transistor T4, and is used to be turned on or off in response to the above-mentioned light-emitting control signal EM.

[0171] In actual applications, when the light-emitting control signal EM indicates that the current working stage of the micro-LED driving circuit is the comparative light-emitting stage, the fifth transistor T5 is turned on, and the input end of the comparison generation unit 101 is connected to the first power supply voltage VGH via the turned-on fifth transistor T5, and the source of the fourth transistor T4 is set to the first power supply voltage VGH.

[0172] The gate of the sixth transistor T6 receives the row scan signal SN, and the drain of the sixth transistor T6 receives the PWMD signal, so as to be turned on or off in response to the row scan signal SN.

[0173] In actual applications, when the row scan signal SN indicates that the current working phase of the micro LED driving circuit is the scanning phase, the sixth transistor T6 is turned on, and the input end of the comparison generation unit 101 receives the PWMD signal through the turned-on sixth transistor T6, and sets the source of the fourth transistor T4 to the voltage corresponding to the PWMD signal.

[0174] The gate of the seventh transistor T7 receives the above-mentioned row scanning signal SN, the source of the seventh transistor T7 is connected to the gate of the fourth transistor T4, and the drain of the seventh transistor T7 is connected to the drain of the fourth transistor T4 and the source of the eighth transistor T8. The seventh transistor T7 is configured to be turned on or off in response to the above-mentioned light-emitting control signal EM, and to connect the gate of the fourth transistor T4 to the drain of the fourth transistor T4 when turned on.

[0175] In actual applications, when the row scan signal SN indicates that the current working stage of the micro LED driving circuit is the scanning stage, the seventh transistor T7 is turned on, and the gate of the fourth transistor T4 and the drain of the fourth transistor T4 are connected via the turned-on seventh transistor T7 to form a diode structure, so that the gate voltage of the fourth transistor T4 is equal to the drain voltage of the fourth transistor T4.

[0176] The gate of the eighth transistor T8 receives the light emitting control signal EM, and the drain of the eighth transistor T8 is connected to the second power supply voltage VGL, so as to be turned on or off in response to the light emitting control signal EM.

[0177] In practical applications, when the light control signal EM indicates that the current working stage of the micro LED driving circuit is the comparative light emitting stage, the eighth transistor T8 is turned on, and the output end of the signal generating module is connected to the second power supply voltage VGL via the turned-on eighth transistor T8.

[0178] It can be understood that in the comparative light-emitting stage, as the first comparative reference signal SWEEP1 continues to decrease, the gate voltage of the fourth transistor T4 gradually decreases. The gate voltage of the fourth transistor T4 can be expressed as PWMD+V th4+ΔSWEEP1, where ΔSWEEP1 is the variation of the first comparison reference signal SWEEP1. th4 +ΔSWEEP is greater than VGH+V th4 When PWMD+V th4 +ΔSWEEP1 is less than VGH+V th4 When the fourth transistor T4 is turned on, the output end of the signal generating module 10 is connected to the first power supply voltage VGH via the turned-on fourth transistor T4 and the turned-on fifth transistor T5, and the output end of the signal generating module 10 outputs a PWM signal of the second level state.

[0179] In this embodiment, in the row scanning stage, the sixth transistor T6 and the seventh transistor T7 compensate for the threshold voltage of the fourth transistor T4 based on the row scanning signal SN; in the comparative light-emitting stage, the fifth transistor T5 and the eighth transistor T8 are turned on in response to the light-emitting control signal EM, and compare the gate voltage of the fourth transistor T4 with the sum of the source voltage of the fourth transistor T4 and the threshold voltage of the fourth transistor T4, and output the above-mentioned PWM signal through the output end of the signal generation module 10 based on the comparison result.

[0180] In one embodiment, for the comparison generation unit 101, FIG18 is a structural diagram of another micro LED driving circuit provided in an embodiment of the present application. As shown in FIG18, the comparison generation unit 101 further includes: a third capacitor C3.

[0181] One end of the third capacitor C3 receives the first comparison reference signal SWEEP1 , and the other end of the third capacitor C3 is connected to the gate of the fourth transistor T4 .

[0182] In combination with the above example, in the row scanning phase, the comparison generation unit 101 receives the PWMD signal through the input terminal of the comparison generation unit 101 based on the row scanning signal SN, so that the source voltage of the fourth transistor T4 is the voltage corresponding to the PWMD signal, and the gate of the fourth transistor T4 is connected to the drain of the fourth transistor T4. For example, at the start of the row scanning phase, the gate voltage of the fourth transistor T4 is higher than PWMD+V th4 , the gate of the fourth transistor T4 discharges to the third capacitor C3 until the gate voltage of the fourth transistor T4 is PWMD+V th4 , achieving compensation for the threshold voltage of the fourth transistor T4. In one embodiment, at the start of the row scanning phase, the gate voltage of the fourth transistor T4 is lower than PWMD+V th4, the third capacitor C3 discharges to the gate of the fourth transistor T4 until the gate voltage of the fourth transistor T4 is PWMD+V th4 , achieving compensation for the threshold voltage of the fourth transistor T4.

[0183] In actual applications, during the row scanning phase, the fourth transistor T4 receives the first comparison reference signal SWEEP1 via the third capacitor C3. As the first comparison reference signal SWEEP1 decreases, the gate voltage of the fourth transistor T4 decreases. The comparison generation unit 101 compares the gate voltage of the fourth transistor T4 with the sum of the source voltage of the fourth transistor T4 and the threshold voltage of the fourth transistor T4, and outputs the aforementioned PWM signal via the output terminal of the signal generation module 10 based on the comparison result.

[0184] In this embodiment, the gate of the fourth transistor T4 receives the first comparison reference signal SWEEP1 via the third capacitor C3. During the row scan phase, the third capacitor C3 compensates for the threshold voltage of the fourth transistor T4. During the comparison light-emitting phase, as the first comparison reference signal SWEEP1 decreases, the gate voltage of the fourth transistor T4 decreases due to coupling via the third capacitor C3. The PWM signal is generated by comparing the gate voltage of the fourth transistor T4 with the source voltage of the fourth transistor T4 and the threshold voltage of the fourth transistor T4.

[0185] In one embodiment, a fourth capacitor C4 may be provided to filter the PWM signal. Regarding the comparison generation unit 101, FIG19 is a schematic diagram of the structure of another micro-LED driving circuit provided in an embodiment of the present application. As shown in FIG19, the comparison generation unit 101 further includes: a fourth capacitor C4.

[0186] One end of the fourth capacitor C4 is connected to the power supply signal VDD, and the other end of the fourth capacitor C4 is connected to the output end of the signal generating module 10 .

[0187] In the above example, the comparison generation unit 101 outputs a PWM signal by comparing the gate voltage of the fourth transistor T4 with the sum of the source voltage of the fourth transistor T4 and the threshold voltage of the fourth transistor T4. When the comparison result changes, the level of the PWM signal changes. In this embodiment, the fourth capacitor C4 is used to filter the PWM signal.

[0188] In one embodiment, the signal generating module 10 further includes: an initialization unit;

[0189] The initialization unit is connected to the fourth transistor T4 and is configured to receive a reset signal and initialize the micro LED driving circuit based on the reset signal.

[0190] The reset signal is used to indicate whether the current micro-LED driver circuit is in the reset phase. For example, when the reset signal is at a first level, the current micro-LED driver circuit is in the reset phase; when the reset signal is at a second level, the current micro-LED driver circuit is not in the reset phase.

[0191] Specifically, when the reset signal indicates that the working phase of the micro LED driving circuit is the reset phase, the initialization unit initializes the micro LED driving circuit.

[0192] In this embodiment, the initialization unit responds to the reset signal and can initialize the micro LED driving circuit during the reset phase.

[0193] The initialization unit includes: a ninth transistor.

[0194] The source of the ninth transistor is connected to the reference power supply voltage, the gate of the ninth transistor receives the reset signal, and the drain of the ninth transistor is connected to the gate of the fourth transistor T4, for being turned on or off in response to the reset signal.

[0195] It can be understood that when the reset signal indicates that the current working stage of the micro LED driving circuit is the reset stage, the ninth transistor is turned on, and the gate of the fourth transistor T4 is connected to the above-mentioned reference power supply voltage REF via the turned-on ninth transistor, that is, the gate voltage of the fourth transistor T4 is set to the reference power supply voltage REF.

[0196] In this embodiment, the comparison and generation unit compensates for the threshold voltage of the fourth transistor based on the row scan signal SN, and compares the gate voltage of the fourth transistor with the sum of the source voltage of the fourth transistor and the threshold voltage of the fourth transistor based on the light emission control signal. Based on the comparison result, the PWM signal is output through the output terminal of the signal generation module. The driving module controls the on or off duration of the driving transistor based on the PWM signal, thereby controlling the output duration of the on-current.

[0197] FIG20 is a schematic structural diagram of another micro LED driving circuit provided in an embodiment of the present application. As shown in FIG20 , this embodiment provides a micro LED driving circuit including: a signal generating module 10 , a driving module 11 and a micro LED 12 .

[0198] In this embodiment, the driving module 11 includes: a driving transistor T0, a fifth capacitor C5, a tenth transistor T10, and an eleventh transistor T11; the signal generating module 10 includes: a fourth transistor T4, a fifth transistor T5, a sixth transistor T6, a seventh transistor T7, an eighth transistor T8, a ninth transistor T9, a third capacitor C3, and a fourth capacitor C4. The reset signal is RESET, the row scan sub-signal is SN, the comparison reference signal is SWEEP, the light emission control signal is EM, the power supply signal is VDD, the first power supply voltage is VGH, the second power supply voltage is VGL, and the reference power supply voltage is REF.

[0199] In one example, the transistor is turned on in response to a signal in a first level state, and is turned off in response to a signal in a second level state.

[0200] For example, the transistors are all P-type thin film transistors, the first level state is a low level, and the second level state is a high level. Correspondingly, the anode of the micro LED 12 is connected to the drain of the driving transistor T0, and the anode of the micro LED 12 receives the light emission control signal EM.

[0201] In some embodiments, the above transistors are all N-type thin film transistors, the first level state is a high level, and the second level state is a low level.

[0202] In one example, the working phases of the micro LED driving circuit are divided into: an initialization phase, a row scanning phase, and a comparative light emitting phase.

[0203] In this example, in the initialization stage, the reset signal is in the first level state, and the row scan signal SN and the light-emitting control signal EM are in the second level state; in the row scan stage, the row scan signal SN first changes from the second level state to the first level state, and then changes from the first level state to the second level state; the reset signal and the light-emitting control signal EM are in the second level state; in the comparative light-emitting stage, the light-emitting control signal EM is in the first level state, and the reset signal and the row scan signal SN are in the second level state.

[0204] To facilitate understanding of the operation of the micro-LED driver circuit, the following examples illustrate the present embodiment. For example, the aforementioned transistors are all P-type thin-film transistors, which conduct in response to a low-level signal and disconnect in response to a high-level signal. The states of the various signals are shown in Figure 21, which is another signal state diagram provided by the present embodiment.

[0205] 21 , in the initialization phase, the reset signal is in a low level state, the row scan signal SN and the light emitting control signal EM are in a high level state; the ninth transistor T9 is turned on in response to the reset signal, and the remaining transistors are turned off. The ninth transistor T9 is turned on to set the gate voltage of the fourth transistor T4 to the reference power supply voltage REF.

[0206] In conjunction with Figure 21, in the above-mentioned row scanning phase, the above-mentioned row scanning signal SN first changes from a high level state to a low level state, and then changes from a low level state to a high level state; the above-mentioned reset signal and the above-mentioned light-emitting control signal EM are in a high level state; the sixth transistor T6 and the seventh transistor T7 are first turned on and then turned off in response to the row scanning signal SN, the fourth transistor T4 is turned on, and the remaining transistors are turned off. The sixth transistor T6 is turned on, setting the source voltage of the fourth transistor T4 to PWMD; the seventh transistor T7 is turned on, and the gate of the fourth transistor T4 is connected to the drain of the fourth transistor T4, forming a diode structure between points A and B; the gate voltage of the fourth transistor T4 and the drain voltage of the fourth transistor T4 are set to PWMD+V through the second capacitor C2. th4 .

[0207] 21 , in the comparative light-emitting stage, the light-emitting control signal EM is in a low-level state, the reset signal and the row scan signal SN are in a high-level state, the third transistor T3, the fifth transistor T5, and the eighth transistor T8 are turned on in response to the light-emitting control signal EM, and the sixth transistor T6, the seventh transistor T7, and the ninth transistor T9 are turned off.

[0208] Specifically, as the first comparison reference signal SWEEP1 decreases, the gate voltage of the fourth transistor T4 decreases. th4 +ΔSWEEP1 is greater than VGH+V th4 When the fourth transistor T4 is turned off, the output end of the signal generating module 10 is connected to the second power supply voltage VGL via the turned-on eighth transistor T8, the output end of the signal generating module 10 outputs the PWM signal of the first level state, the tenth transistor T10 is turned on, the gate of the driving transistor T0 receives the second comparison reference signal SWEEP2 through the fifth capacitor C5, and receives the PAMD signal through the turned-on tenth transistor T10, the driving transistor T0 is turned on, and the micro LED 12 emits light.

[0209] Correspondingly, when PWMD+V th4 +ΔSWEEP1 is less than VGH+V th4When the fourth transistor T4 is turned on, the output end of the signal generating module 10 is connected to the first power supply voltage VGH via the turned-on fourth transistor T4 and the turned-on fifth transistor T5, the output end of the signal generating module 10 outputs a PWM signal in the second level state, the tenth transistor T10 is turned off, and the gate of the driving transistor T0 receives the second comparison reference signal SWEEP2 through the fifth capacitor C5. As the second comparison reference signal SWEEP2 increases, the potential of the driving transistor T0 increases, causing the driving transistor T0 to be turned off, and the micro LED 12 stops emitting light.

[0210] In the micro-LED driving circuit provided in this embodiment, a signal generating module receives a light-emission control signal and a first comparison reference signal, and outputs a PWM signal based on the light-emission control signal and the first comparison reference signal. The first comparison reference signal is a linearly decreasing ramp signal. The PWM signal is a signal with different pulse widths. A driving module is connected to the signal generating module, and the driving module includes a driving transistor and a control unit. One end of the driving module is connected to the power supply signal, and the other end of the driving module is connected to the micro-LED. The control unit is connected to the control end of the driving transistor, and the control unit receives a PAMD signal, a PWM signal, and a second comparison reference signal. The control unit is configured to transmit a superposition signal of the PAMD signal and the second comparison reference signal to the control end of the driving transistor when the PWM signal is at a first level; and transmit the second comparison reference signal to the control end of the driving transistor when the PWM signal is at a second level. The second comparison reference signal is an inverted signal of the first comparison reference signal. The driving transistor is turned on in response to the superposition signal of the PAMD signal and the second comparison reference signal, and is turned off in response to the second comparison reference signal. The micro-LED is connected to the driving module, receives a conduction current and a light-emission control signal, and emits light in response to the light-emission control signal and the conduction current. In the solution of this embodiment, the second comparison reference signal and the first comparison reference signal are applied synchronously, and the second comparison reference signal and the first comparison reference signal are in antiphase. In the comparison light-emitting stage, when the first comparison reference signal is larger, the signal generating module generates a PWM signal in a low-level state, and the micro-LED emits light. At this time, the internal transistor of the signal generating module does not need to be turned on to transmit the power supply voltage to the output end of the signal generating module, and there is no current inside the signal generating module; correspondingly, when the first comparison reference signal is smaller, the signal generating module generates a PWM signal in a high-level state, and the micro-LED stops emitting light. At this time, the internal transistor of the signal generating module is turned on to transmit the power supply voltage to the output end of the signal generating module, and there is current inside the signal generating module; in practice, the micro-LED emits light for a longer time than the micro-LED does not emit light, thereby reducing the on-time of the transistor inside the signal generating module and reducing the power consumption of the micro-LED driving circuit.

[0211] In the related art micro-LED driving circuit shown in Figure 1, in actual applications, to meet the demand for high brightness, the conduction current of the micro-LED can be increased by increasing VDD or reducing PAWD, thereby improving the brightness of the micro-LED. Generally, the conduction current of the micro-LED is increased by increasing VDD.

[0212] However, VDD is the power supply signal for the micro LED driving circuit. Therefore, increasing VDD will increase the overall power consumption of the circuit.

[0213] FIG22 is a schematic structural diagram of another micro LED driving circuit provided in an embodiment of the present application. As shown in FIG22 , the present embodiment provides a micro LED driving circuit, including: a signal generating module 10, a driving module 11 and a micro LED 12; wherein the driving module 11 includes a driving transistor T0.

[0214] In this embodiment, the signal generation module 10 is configured to receive the emission control signal EM and the comparison reference signal SWEEP, and output a PWM signal based on the emission control signal EM and the comparison reference signal SWEEP. The comparison reference signal SWEEP is a linearly increasing ramp signal, and the PWM signal is a signal with varying pulse widths.

[0215] In this embodiment, the driving module 11 is connected to the signal generating module 10, and the driving module 11 includes a driving transistor T0. One end of the driving module 11 is connected to the power supply signal VDD, and the other end of the driving module 11 is connected to the micro LED 12. The control end of the driving transistor T0 receives an adjustment signal, which is not the power supply signal VDD and is used to adjust the magnitude of the conduction current. In addition, the PWM signal is used to control the on or off time of the driving transistor T0 in the driving module 11 to control the output time of the conduction current.

[0216] In this embodiment, the micro LED 12 is connected to the driving module 11 , and is configured to receive the conduction current and the light-emitting control signal EM, and emit light in response to the light-emitting control signal EM and the conduction current.

[0217] In this embodiment, the micro-LED driving process is divided into three phases: an initialization phase, a row scanning phase, and a comparative light emission phase. During the initialization phase, the input terminal of the signal generation module 10 is set to the reference power supply voltage REF. During the row scanning phase, the signal generation module 10 receives the PWMD signal and sets the input terminal and the output terminal of the signal generation module 10 to approximately the PWMD voltage. The driving module 11 sets the control terminal of the driving transistor T0 to PAMD. Some time after the control terminal of the driving transistor T0 is set to PAMD, the adjustment signal changes from a high level state to a high level state, thereby reducing the voltage at the control terminal of the driving transistor T0.

[0218] The light-emission control signal EM is used to control the operating phase of the micro-LED driver circuit, determining whether it is in the comparative light-emission phase. For example, when the light-emission control signal EM is at a first level, the micro-LED driver circuit is currently operating in the comparative light-emission phase; when the light-emission control signal EM is at a second level, the micro-LED driver circuit is not currently operating in the comparative light-emission phase. It will be understood that when the signal generation module 10 receives the light-emission control signal EM and the light-emission control signal EM is at the first level, the micro-LED driver circuit is currently operating in the comparative light-emission phase, and the signal generation module begins outputting a PWM signal to the driver module 11.

[0219] In actual applications, the driver module 11 controls the on and off switching of the driver transistor T0 in response to the PWM signal. For example, when the PWM signal received by the driver module 11 is at the second level, the driver transistor T0 is controlled to be on; when the PWM signal received by the driver module 11 is at the first level, the driver transistor T0 is controlled to be off. It is understood that one end of the driver module 11 is connected to the power supply signal VDD and the other end is connected to the micro LED 12. When the driver transistor T0 is on, the driver module 11 provides a conduction current to the micro LED 12; when the driver transistor T0 is off, the driver module 11 stops providing a conduction current to the micro LED 12.

[0220] At the beginning of the comparison light-emitting stage, the input end of the signal generating module 10 receives the comparison reference signal SWEEP, which is a linearly increasing ramp signal; the output end of the signal generating module 10 is connected to the driving module 11, and the signal generating module 10 outputs a PWM signal in a second level state to the driving module 11; the driving module 11 receives the PAMD signal and the power supply signal VDD, and the driving module 11 responds to the PWM signal in the second level state and transmits the PAMD signal to the control end of the driving transistor T0 to control the driving transistor T0 to turn on, and the micro LED 12 starts to emit light.

[0221] Some time after the comparative light-emitting phase begins, because the level of the comparative reference signal SWEEP is still relatively low, the signal generation module 10 continues to output a PWM signal at the second level. Consequently, the driver module 11 continues to transmit the PAMD signal to the control terminal of the driver transistor T0 to turn on the driver transistor T0, causing the micro LED 12 to continue emitting light. As the comparative reference signal SWEEP gradually increases until the level of the comparative reference signal SWEEP reaches a higher level, the signal generation module 10 outputs a PWM signal at the first level. The driver module 11 transmits the power supply signal VDD to the control terminal of the driver transistor T0 to turn off the driver transistor T0, causing the micro LED 12 to stop emitting light.

[0222] It will be understood that one end of the driver module 11 is connected to the power supply signal VDD and the other end is connected to the micro-LED 12. When the driver transistor T0 is on, the driver module 11 provides a conduction current to the micro-LED 12; when the driver transistor T0 is off, the driver module 11 stops providing the conduction current to the micro-LED 12. In this embodiment, the micro-LED 12 is connected to the driver module 11 to receive the conduction current and the emission control signal EM, and to emit light in response to the emission control signal EM and the conduction current. It will be understood that the micro-LED 12 will only emit light when the emission control signal EM indicates that the current operating stage of the micro-LED driver circuit is the comparative emission stage and the driver module 11 outputs the conduction current to the micro-LED 12.

[0223] In actual applications, during the comparative light-emitting phase, the signal generation module 10 outputs a PWM signal based on the comparison reference signal SWEEP. For example, when the comparison reference signal SWEEP is greater than a preset threshold, the signal generation module outputs a PWM signal at a first level. When the comparison reference signal SWEEP is less than the preset threshold, the signal generation module 10 outputs a PWM signal at a second level.

[0224] In this embodiment, the comparison reference signal SWEEP is a linearly increasing ramp signal. Accordingly, when the comparison reference signal SWEEP is less than a preset threshold, the signal generation module 10 outputs a PWM signal at a second level. In response to the PWM signal, the driver module 11 stops transmitting the power supply signal VDD to the control terminal of the driver transistor T0, turning on the driver transistor T0 and causing the micro-LED to continue emitting light. This continues until the comparison reference signal rises to a preset threshold, causing the PWM signal's level to change. At this point, the driver module 11, in response to the PWM signal, transmits the power supply signal VDD to the control terminal of the driver transistor T0, turning off the driver transistor T0 and stopping the micro-LED from emitting light.

[0225] During the comparative light-emitting phase, when the micro-LED emits light, the comparison reference signal maintains a low level. Therefore, the signal generation module 10 outputs a PWM signal at a second level. In response to the PWM signal, the driver module 11 does not transmit the power supply signal VDD to the control terminal of the driver transistor T0. In practical applications, the driver transistor T0 is a P-type thin-film transistor. In conjunction with the above example, during the row scan phase, the control terminal of the driver transistor T0 is set to PAMD and connected to a low-level adjustment signal, causing the voltage at the control terminal of the driver transistor T0 to be less than PAMD. At this point, the driver transistor T0 is turned on, and the micro-LED emits light. In practical applications, the adjustment signal reduces the voltage at the control terminal of the driver transistor T0, increasing the voltage difference between the control terminal of the driver transistor T0 and the power supply signal VDD. When high brightness is required, the power supply signal VDD does not need to be increased, thereby increasing the on-current. Therefore, while meeting high brightness requirements, it is possible to avoid increasing the power consumption of the micro-LED driver circuit.

[0226] It is understandable that, when the brightness requirement remains unchanged, reducing the size of the power supply signal VDD can still ensure the size of the conduction current by adjusting the signal to meet the brightness requirement, which can effectively reduce the power consumption of the micro LED driving circuit.

[0227] In some embodiments, for the driving module 11, the control terminal of the driving transistor T0 can receive the adjustment signal via the capacitor. FIG23 is a schematic diagram of the structure of another micro-LED driving circuit provided by an embodiment of the present application. As shown in FIG23, the driving module 11 further includes: a sixth capacitor C6;

[0228] One end of the sixth capacitor C6 is connected to the adjustment signal, and the other end of the sixth capacitor C6 is connected to the control end of the driving transistor T0.

[0229] In one example, the regulation signal is a CK signal. When the CK signal changes, the control terminal signal of the driving transistor T0 changes. For example, the change in the voltage at the control terminal of the driving transistor T0 can be expressed as ΔCK. Exemplarily, the driving transistor T0 is a P-type thin-film transistor. The control terminal of the driving transistor T0 is a gate connected to the CK signal via a sixth capacitor C6. The source of the driving transistor T0 is connected to the power supply signal VDD. The drain of the driving transistor T0 is connected to the micro LED 12. When the driving transistor T0 is turned on, it provides a conduction current to the micro LED 12.

[0230] In practical applications, the magnitude of the on-state current output by the drain of the driver transistor T0 is related to the voltage difference between the gate and source of the driver transistor T0. The larger the voltage difference between the gate and source of the driver transistor T0, the greater the on-state current. Therefore, when the CK signal decreases, the gate voltage of the driver transistor T0 decreases, which can increase the voltage difference between the gate and source of the driver transistor T0, thereby increasing the on-state current.

[0231] In this embodiment, the control terminal of the driving transistor T0 receives the adjustment signal via the sixth capacitor C6 , and the voltage of the control terminal of the driving transistor T0 is adjusted by utilizing the coupling effect of the sixth capacitor C6 .

[0232] In addition, for the driving module 11, Figure 24 is a structural diagram of another micro LED driving circuit provided in an embodiment of the present application. As shown in Figure 24, the driving module 11 also includes: a twelfth transistor T12, a thirteenth transistor T13 and a fourteenth transistor T14.

[0233] The source of the twelfth transistor T12 is connected to the power supply signal VDD, the gate of the twelfth transistor T12 receives the light emitting control signal EM, and the drain of the twelfth transistor T12 is connected to the source of the thirteenth transistor T13, and is used to be turned on or off in response to the above light emitting control signal EM.

[0234] In conjunction with the above example, the light-emission control signal EM is used to control the operating phase of the micro-LED driver circuit, determining whether it is in the comparative light-emission phase. When the light-emission control signal EM indicates that the current operating phase of the micro-LED driver circuit is in the comparative light-emission phase, the twelfth transistor T12 is turned on and transmits the power supply signal VDD to the drain of the thirteenth transistor T13. When the light-emission control signal EM indicates that the current operating phase of the micro-LED driver circuit is in the comparative light-emission phase, the twelfth transistor T12 is turned off.

[0235] The gate of the thirteenth transistor T13 is connected to the output terminal of the signal generating module 10 , and the drain of the thirteenth transistor T13 is connected to the drain of the fourteenth transistor T14 and the control terminal of the driving transistor T0 , for being turned on or off in response to the PWM signal.

[0236] In practical applications, the output terminal of the signal generation module 10 is used to output the aforementioned PWM signal. In conjunction with the above example, the light-emitting phase is divided into a light-emitting phase and a light-off phase based on the level of the PWM signal. When the PWM signal indicates that the micro-LED driver circuit is currently operating in the light-emitting phase, the thirteenth transistor T13 is controlled to be turned off; when the PWM signal indicates that the micro-LED driver circuit is currently operating in the light-off phase, the thirteenth transistor T13 is controlled to be turned on.

[0237] The gate of the fourteenth transistor T14 receives a row scan signal SN, and the source of the fourteenth transistor T14 receives a PAMD signal, and is configured to be turned on or off in response to the row scan signal SN. The PAMD signal represents a voltage value at which the luminous brightness is maximum. In practical applications, when the fourteenth transistor T14 is turned on, the voltage at the control terminal of the driving transistor T0 is set to a voltage value corresponding to the PAMD signal.

[0238] It can be understood that when the fourteenth transistor T14 is turned on, the voltage at the control terminal of the driving transistor T0 is set to the voltage value corresponding to the PAMD signal. When the thirteenth transistor T13 is turned off, the voltage at the control terminal of the driving transistor T0 is set to the voltage value corresponding to the PAMD signal, the driving transistor T0 is turned on, the driving module 11 outputs the on-current, and the micro LED 12 emits light. Correspondingly, when the twelfth transistor T12 is turned on and the thirteenth transistor T13 is turned on, the power supply signal VDD is transmitted to the drain of the thirteenth transistor T13, i.e., the control terminal of the driving transistor T0, via the turned-on twelfth transistor T12 and the turned-on thirteenth transistor T13. The driving transistor T0 is turned off, the driving module 11 stops outputting the on-current, and the micro LED 12 stops emitting light.

[0239] In this embodiment, the thirteenth transistor T13 is turned on or off in response to the PWM signal, and controls the driving transistor T0 to be turned on or off, thereby achieving control over the output duration of the on-current.

[0240] In addition, for the driving module 11, in one embodiment, FIG25 is a structural diagram of another micro LED driving circuit provided in an embodiment of the present application. As shown in FIG25, based on FIG24, the driving module 11 further includes: a fifteenth transistor T15.

[0241] Among them, the gate of the fifteenth transistor T15 receives the above-mentioned light-emitting control signal EM, the source of the fifteenth transistor T15 is connected to the above-mentioned power supply signal VDD, and the drain of the fifteenth transistor T15 is connected to the source of the driving transistor T0, and is used to respond to the above-mentioned light-emitting control signal EM and control the connection and disconnection of the driving transistor T0 and the above-mentioned power supply signal VDD.

[0242] In conjunction with the above example, the on and off state of the driving transistor T0 is related to the output of the conduction current. Turning on the driving transistor T0 during the non-comparison light-emitting phase can affect the accuracy of the light emission of the micro-LED 12. It can be understood that a fifteenth transistor T15 is provided between the source of the driving transistor T0 and the power supply signal VDD. If the current operating phase of the micro-LED driving circuit is the comparison light-emitting phase, the fifteenth transistor T15 is turned on, and the source of the driving transistor T0 is connected to the power supply signal VDD via the fifteenth transistor T15. If the current operating phase of the micro-LED driving circuit is not the comparison light-emitting phase, the fifteenth transistor T15 is turned off, and the source of the driving transistor T0 is disconnected from the power supply signal VDD. This prevents the micro-LED 12 from emitting light during the non-comparison light-emitting phase due to the conduction of the driving transistor. This embodiment improves the accuracy of the light emission of the micro-LED 12.

[0243] In the micro-LED driver circuit provided in this embodiment, a signal generation module is configured to receive a light-emission control signal and a comparison reference signal, and output a PWM signal based on the light-emission control signal and the comparison reference signal. A driver module is connected to the signal generation module and includes a driver transistor. One end of the driver module is connected to a power supply signal, and the other end of the driver module is connected to a micro-LED. A control end of the driver transistor receives a regulation signal, which is not the power supply signal and is used to adjust the magnitude of the on-current. The PWM signal is used to control the on-time or off-time of the driver transistor in the driver module to control the duration of the on-current output. The micro-LED is connected to the driver module and configured to receive the on-current and light-emission control signal and emit light in response to the light-emission control signal and the on-current control. In this embodiment, during the light-emission comparison phase, the regulation signal reduces the voltage at the control end of the driver transistor, thereby increasing the voltage difference between the control end of the driver transistor and the power supply signal VDD. When high brightness is required, the on-current can be increased without increasing the power supply signal VDD. Thus, while meeting high brightness requirements, the power consumption of the micro-LED driver circuit is avoided.

[0244] FIG26 is a schematic structural diagram of another micro LED driving circuit provided in an embodiment of the present application. As shown in FIG26 , the signal generating module 10 includes: a fourth transistor T4 and a comparison generating unit 101 .

[0245] In this embodiment, the gate of the fourth transistor T4 receives the comparison reference signal SWEEP, the source of the fourth transistor T4 is connected to the input of the comparison generation unit 101 , and the drain of the fourth transistor T4 is connected to the output of the signal generation module 10 .

[0246] In this embodiment, the comparison generation unit 101 receives a row scan signal SN, and is configured to receive a PWMD signal through the input end of the comparison generation unit 101 based on the row scan signal SN, so that the source voltage of the fourth transistor T4 is a voltage corresponding to the PWMD signal, and the gate of the fourth transistor T4 is connected to the drain of the fourth transistor T4.

[0247] In this embodiment, the comparison generation unit 101 receives the above-mentioned light-emitting control signal EM, and is used to connect the first power supply voltage VGH to the input terminal of the comparison generation unit 101 based on the above-mentioned light-emitting control signal EM, so that the source voltage of the fourth transistor T4 is the above-mentioned first power supply voltage VGH, and compare the gate voltage of the fourth transistor T4 with the sum of the source voltage of the fourth transistor T4 and the threshold voltage of the fourth transistor T4, and output the above-mentioned PWM signal through the output terminal of the signal generation module 10 based on the comparison result.

[0248] In practical applications, the row scan signal SN is used to indicate whether the current operating phase of the micro-LED driver circuit is the row scan phase. For example, when the row scan signal SN is in a first level state, the current operating phase of the micro-LED driver circuit is the row scan phase; when the row scan signal SN is in a second level state, the current operating phase of the micro-LED driver circuit is not the row scan phase. When the row scan signal SN is in the second level state, the current operating phase of the micro-LED driver circuit is the row scan phase; when the row scan signal SN is in the first level state, the current operating phase of the micro-LED driver circuit is not the row scan phase.

[0249] Wherein, PWMD is a voltage value that changes according to the brightness of the micro LED 12. When the scanning signal indicates that the current working stage of the micro LED driving circuit is the row scanning stage, the input terminal of the comparison generation unit 101 receives the PWMD signal, the source voltage of the fourth transistor T4 is PWMD, and the gate of the fourth transistor T4 is connected to the drain of the fourth transistor T4, and the voltage of the gate of the fourth transistor T4 and the drain of the fourth transistor T4 are equal to PWMD+V th4 , where V th4 It is understood that based on the row scanning signal SN, the comparison generation unit 101 realizes compensation for the threshold voltage of the fourth transistor T4, thereby preventing the threshold voltage of the fourth transistor T4 from affecting the comparison result of the subsequent comparison light emitting phase.

[0250] In actual applications, during the comparative light-emitting phase, the comparison generation unit 101 receives the light-emitting control signal EM. When the light-emitting control signal EM indicates that the current operating phase of the micro-LED driving circuit is the comparative light-emitting phase, the input terminal of the comparison generation unit 101 is connected to the first power supply voltage VGH, and the source voltage of the fourth transistor T4 is the first power supply voltage VGH. In combination with the above example, after the row scanning phase, the gate voltage of the fourth transistor T4 is equal to the drain voltage of the fourth transistor T4, both being PWMD+V th4 .

[0251] In this embodiment, in the comparison light-emitting stage, the gate of the fourth transistor T4 receives the comparison reference signal SWEEP, which is a linearly increasing ramp signal. Specifically, as the comparison reference signal SWEEP increases, the gate voltage of the fourth transistor T4 increases. The gate voltage of the fourth transistor T4 can be expressed as PWMD+V th4 +ΔSWEEP, where ΔSWEEP is the variation of the reference signal SWEEP. th4 +ΔSWEEP is less than VGH+V th4 When PWMD+V th4 +ΔSWEEP is greater than VGH+V th4 When , the fourth transistor T4 is turned off, and the output end of the signal generating module 10 outputs a PWM signal in the first level state.

[0252] In actual applications, in the row scanning stage, the comparison generation unit 101 compensates the threshold voltage of the fourth transistor T4 based on the row scanning signal SN; in the comparison light-emitting stage, based on the light-emitting control signal EM, the gate voltage of the fourth transistor T4 is compared with the sum of the source voltage of the fourth transistor T4 and the threshold voltage of the fourth transistor T4, and the above-mentioned PWM signal is output through the output end of the signal generation module 10 based on the comparison result.

[0253] Regarding the comparison generation unit 101, in one embodiment, FIG27 is a structural diagram of another micro LED driving circuit provided in an embodiment of the present application. As shown in FIG27, the comparison generation unit 101 includes: a fifth transistor T5, a sixth transistor T6, a seventh transistor T7, and an eighth transistor T8.

[0254] Among them, the source of the fifth transistor T5 is connected to the first power supply voltage VGH, the gate of the fifth transistor T5 receives the above-mentioned light-emitting control signal EM, and the drain of the fifth transistor T5 is connected to the source of the sixth transistor T6 and the source of the fourth transistor T4, and is used to be turned on or off in response to the above-mentioned light-emitting control signal EM.

[0255] In actual applications, when the light-emitting control signal EM indicates that the current working stage of the micro-LED driving circuit is the comparative light-emitting stage, the fifth transistor T5 is turned on, and the input end of the comparison generation unit is connected to the first power supply voltage VGH via the turned-on fifth transistor T5, and the source of the fourth transistor T4 is set to the first power supply voltage VGH.

[0256] The gate of the sixth transistor T6 receives the row scan signal SN, and the drain of the sixth transistor T6 receives the PWMD signal, so as to be turned on or off in response to the row scan signal SN.

[0257] In actual applications, when the row scan signal SN indicates that the current working stage of the micro LED driving circuit is the scanning stage, the sixth transistor T6 is turned on, and the input end of the comparison generation unit receives the PWMD signal through the turned-on sixth transistor T6, and sets the source of the fourth transistor T4 to the voltage corresponding to the PWMD signal.

[0258] The gate of the seventh transistor T7 receives the above-mentioned row scanning signal SN, the source of the seventh transistor T7 is connected to the gate of the fourth transistor T4, and the drain of the seventh transistor T7 is connected to the drain of the fourth transistor T4 and the source of the eighth transistor T8. The seventh transistor T7 is configured to be turned on or off in response to the above-mentioned light-emitting control signal EM, and to connect the gate of the fourth transistor T4 to the drain of the fourth transistor T4 when turned on.

[0259] In actual applications, when the row scan signal SN indicates that the current working stage of the micro LED driving circuit is the scanning stage, the seventh transistor T7 is turned on, and the gate of the fourth transistor T4 and the drain of the fourth transistor T4 are connected via the turned-on seventh transistor T7 to form a diode structure, so that the gate voltage of the fourth transistor T4 is equal to the drain voltage of the fourth transistor T4.

[0260] The gate of the eighth transistor T8 receives the light emitting control signal EM, and the drain of the eighth transistor T8 is connected to the reference power supply voltage REF, so as to be turned on or off in response to the light emitting control signal EM.

[0261] In practical applications, when the light control signal EM indicates that the current working stage of the micro LED driving circuit is the comparative light emitting stage, the eighth transistor T8 is turned on, and the output end of the signal generating module is connected to the reference power supply voltage REF via the turned-on eighth transistor T8.

[0262] It can be understood that in the comparative light-emitting stage, as the comparative reference signal SWEEP increases, the gate voltage of the fourth transistor T4 increases. The gate voltage of the fourth transistor T4 can be expressed as PWMD+V th4+ΔSWEEP, where ΔSWEEP is the variation of the reference signal SWEEP. th4 +ΔSWEEP is less than VGH+V th4 When PWMD+V th4 +ΔSWEEP is greater than VGH+V th4 When the fourth transistor T4 is turned off, the output end of the signal generating module 10 is connected to the reference power supply voltage REF via the turned-on eighth transistor T8, and the output end of the signal generating module 10 outputs a PWM signal in the first level state.

[0263] In this embodiment, in the row scanning stage, the sixth transistor T6 and the seventh transistor T7 compensate for the threshold voltage of the fourth transistor T4 based on the row scanning signal SN; in the comparative light-emitting stage, the fifth transistor T5 and the eighth transistor T8 are turned on in response to the light-emitting control signal EM, and compare the gate voltage of the fourth transistor T4 with the sum of the source voltage of the fourth transistor T4 and the threshold voltage of the fourth transistor T4, and output the above-mentioned PWM signal through the output end of the signal generation module 10 based on the comparison result.

[0264] Regarding the comparison generation unit 101, in one implementation, FIG28 is a structural diagram of another micro LED driving circuit provided in an embodiment of the present application. As shown in FIG28, the comparison generation unit 101 further includes: a third capacitor C3.

[0265] One end of the third capacitor C3 receives the comparison reference signal SWEEP, and the other end of the third capacitor C3 is connected to the gate of the fourth transistor T4.

[0266] In combination with the above example, in the row scanning phase, the comparison generation unit 101 receives the PWMD signal through the input terminal of the comparison generation unit 101 based on the row scanning signal SN, so that the source voltage of the fourth transistor T4 is the voltage corresponding to the PWMD signal, and the gate of the fourth transistor T4 is connected to the drain of the fourth transistor T4. For example, at the start of the row scanning phase, the gate voltage of the fourth transistor T4 is higher than PWMD+V th4 , the gate of the fourth transistor T4 discharges to the third capacitor C3 until the gate voltage of the fourth transistor T4 is PWMD+V th4 , achieving compensation for the threshold voltage of the fourth transistor T4. At the start of the row scanning phase, the gate voltage of the fourth transistor T4 is lower than PWMD+V th4, the third capacitor C3 discharges to the gate of the fourth transistor T4 until the gate voltage of the fourth transistor T4 is PWMD+V th4 , achieving compensation for the threshold voltage of the fourth transistor T4.

[0267] In actual applications, during the row scanning phase, the fourth transistor T4 receives the comparison reference signal SWEEP via the third capacitor C3. As the comparison reference signal SWEEP increases, the gate voltage of the fourth transistor T4 increases. The comparison generation unit 101 compares the gate voltage of the fourth transistor T4 with the sum of the source voltage of the fourth transistor T4 and the threshold voltage of the fourth transistor T4, and outputs the PWM signal via the output terminal of the signal generation module 10 based on the comparison result.

[0268] In this embodiment, the gate of the fourth transistor T4 receives the comparison reference signal SWEEP via the third capacitor C3. During the row scanning phase, the third capacitor C3 is used to compensate for the threshold voltage of the fourth transistor T4. During the comparison light-emitting phase, as the comparison reference signal SWEEP increases, the gate voltage of the fourth transistor T4 increases through coupling with the fourth transistor T4. The PWM signal is generated by comparing the gate voltage of the fourth transistor T4 with the source voltage of the fourth transistor T4 and the threshold voltage of the fourth transistor T4.

[0269] In one embodiment, a fourth capacitor C4 may be provided to filter the PWM signal. Regarding the comparison and generation unit 101, in one embodiment, FIG29 is a schematic diagram of the structure of another micro-LED driving circuit provided in an embodiment of the present application. As shown in FIG29, the comparison and generation unit 101 further includes: a fourth capacitor C4.

[0270] One end of the fourth capacitor C4 is connected to the power supply signal VDD, and the other end of the fourth capacitor C4 is connected to the output end of the signal generating module 10 .

[0271] In the above example, the comparison generation unit 101 outputs a PWM signal by comparing the gate voltage of the fourth transistor T4 with the sum of the source voltage of the fourth transistor T4 and the threshold voltage of the fourth transistor T4. When the comparison result changes, the level of the PWM signal changes. In this embodiment, the fourth capacitor C4 is used to filter the PWM signal.

[0272] In one embodiment, the signal generating module 10 further includes: an initialization unit;

[0273] The initialization unit is connected to the fourth capacitor C4 and is configured to receive a reset signal and initialize the micro LED driving circuit based on the reset signal.

[0274] The reset signal is used to indicate whether the current working stage of the micro LED driver circuit is the reset stage. For example, when the reset signal is at the first level, the current working stage of the micro LED driver circuit is the reset stage; when the reset signal is at the second level, the current working stage of the micro LED driver circuit is not the reset stage.

[0275] Specifically, when the reset signal indicates that the working phase of the micro LED driving circuit is the reset phase, the initialization unit initializes the micro LED driving circuit.

[0276] In this embodiment, the initialization unit responds to the reset signal and can initialize the micro LED driving circuit during the reset phase.

[0277] In one implementation, the initialization unit includes: a ninth transistor.

[0278] The source of the ninth transistor is connected to the reference power supply voltage, the gate of the ninth transistor receives the reset signal, and the drain of the ninth transistor is connected to the gate of the fourth transistor T4, for being turned on or off in response to the reset signal.

[0279] It can be understood that when the reset signal indicates that the current working stage of the micro LED driving circuit is the reset stage, the tenth transistor is turned on, and the gate of the fourth transistor T4 is connected to the above-mentioned reference power supply voltage REF via the turned-on ninth transistor, that is, the gate voltage of the fourth transistor T4 is set to the reference power supply voltage REF.

[0280] In this embodiment, the comparison and generation unit compensates for the threshold voltage of the fourth transistor based on the row scan signal SN, and compares the gate voltage of the fourth transistor with the sum of the source voltage of the fourth transistor and the threshold voltage of the fourth transistor based on the light emission control signal. Based on the comparison result, the PWM signal is output through the output terminal of the signal generation module. The driving module controls the on or off duration of the driving transistor based on the PWM signal, thereby controlling the output duration of the on-current.

[0281] Figure 30 is a structural schematic diagram of another micro LED driving circuit provided in an embodiment of the present application. As shown in Figure 30, this embodiment provides a micro LED driving circuit, including: a signal generating module 10, a driving module 11 and a micro LED 12.

[0282] In this embodiment, the driving module 11 includes: a driving transistor T0, a sixth capacitor C6, a first transistor T1, a second transistor T2, a third transistor T3, and a fourth transistor T4; the signal generating module 10 includes: a fourth transistor T4, a fifth transistor T5, a sixth transistor T6, a seventh transistor T7, an eighth transistor T8, a third capacitor C3, a fourth capacitor C4, and a ninth transistor T9. The adjustment signal is a CK signal, the reset signal is RESET, the row scan sub-signal is SN, the comparison reference signal is SWEEP, the light emission control signal is EM, the power supply signal is VDD, the first power supply voltage is VGH, and the reference power supply voltage is REF.

[0283] In one example, the transistor is turned on in response to a signal in a first level state, and is turned off in response to a signal in a second level state.

[0284] For example, the transistors are all P-type thin film transistors, the first level state is a low level, and the second level state is a high level. Correspondingly, the anode of the micro LED 12 is connected to the drain of the driving transistor T0, and the anode of the micro LED 12 receives the light emission control signal EM.

[0285] The above transistors are all N-type thin film transistors, the first level state is a high level, and the second level state is a low level.

[0286] In one example, the working phases of the micro LED driving circuit are divided into: an initialization phase, a row scanning phase, and a comparative light emitting phase.

[0287] In this example, in the initialization stage, the reset signal is in the first level state, and the row scan signal SN and the light-emitting control signal EM are in the second level state; in the row scan stage, the row scan signal SN first changes from the second level state to the first level state, and then changes from the first level state to the second level state; the reset signal and the light-emitting control signal EM are in the second level state; in the comparative light-emitting stage, the light-emitting control signal EM is in the first level state, and the reset signal and the row scan signal SN are in the second level state.

[0288] To facilitate understanding of the operation of the micro-LED driver circuit, the following examples illustrate the present embodiment. For example, the aforementioned transistors are all P-type thin-film transistors, which conduct in response to a low-level signal and disconnect in response to a high-level signal. The states of the various signals are shown in Figure 31, which is another signal state diagram provided by the present embodiment.

[0289] In combination with Figure 30 and Figure 31, in the initialization stage, the above-mentioned reset signal is in a low level state, the above-mentioned row scanning signal SN and the above-mentioned light-emitting control signal EM are in a high level state; the ninth transistor T9 is turned on in response to the reset signal, and the remaining transistors are turned off. The ninth transistor T9 is turned on to set the gate voltage of the fourth transistor T4 to the reference power supply voltage REF.

[0290] In conjunction with Figures 30 and 31 , during the row scan phase, the row scan signal SN first changes from a high level state to a low level state, and then from a low level state to a high level state; the reset signal and the light-emitting control signal EM are in a high level state; the second transistor T2, the sixth transistor T6, and the seventh transistor T7 are first turned on and then turned off in response to the row scan signal SN; the fourth transistor T4 is turned on, and the remaining transistors are turned off. The second transistor T2 is turned on, setting the gate voltage of the driving transistor T0 to PAMD; the sixth transistor T6 is turned on, setting the source voltage of the fourth transistor T4 to PWMD; the seventh transistor T7 is turned on, connecting the gate of the fourth transistor T4 to the drain of the fourth transistor T4, forming a diode structure between points A and B; and the gate voltage and the drain voltage of the fourth transistor T4 are set to PWMD+V via the third capacitor C3. th4 It should be noted that when the row scan signal SN changes from low level to high level, the gate voltage of the driving transistor T0 is set to PAMD. However, when the CK signal changes from high level to low level, the gate voltage of the driving transistor T0 decreases.

[0291] 30 and 31 , in the comparative light-emitting stage, the light-emitting control signal EM is in a low-level state, the reset signal and the row scanning signal SN are in a high-level state, the twelfth transistor T12, the fifteenth transistor T15, the fifth transistor T5, and the eighth transistor T8 are turned on in response to the light-emitting control signal EM, and the fourteenth transistor T14, the sixth transistor T6, the seventh transistor T7, and the ninth transistor T9 are turned off.

[0292] As the comparison reference signal SWEEP increases, when PWMD+V th4 +ΔSWEEP is less than VGH+V th4 When PWMD+V th4 +ΔSWEEP is greater than VGH+V th4When the fourth transistor T4 is turned off, the output end of the signal generating module 10 is connected to the reference power supply voltage REF via the turned-on eighth transistor T8, the output end of the signal generating module 10 outputs a PWM signal in the first level state, the thirteenth transistor T13 is turned on, the gate voltage of the driving transistor T0 is the power supply signal VDD, the driving transistor T0 is turned off, and the micro LED 12 stops emitting light.

[0293] In the micro-LED driver circuit provided in this embodiment, a signal generation module is configured to receive an emission control signal EM and a comparison reference signal SWEEP, and output a PWM signal based on the emission control signal EM and the comparison reference signal SWEEP. A driver module is connected to the signal generation module and includes a driver transistor. One end of the driver module is connected to a power supply signal VDD, and the other end of the driver module is connected to a micro-LED. A control end of the driver transistor receives a regulation signal, which is not the power supply signal VDD and is used to adjust the magnitude of the on-current. The PWM signal is used to control the on- and off-times of the driver transistor in the driver module, thereby controlling the duration of the on-current output. The micro-LED is connected to the driver module and configured to receive the on-current and emission control signal EM, and emit light in response to the emission control signal EM and the on-current. In this embodiment, during the comparative emission phase, the regulation signal reduces the voltage at the control end of the driver transistor T0, thereby increasing the voltage difference between the control end of the driver transistor T0 and the power supply signal VDD. When high brightness is required, the on-current can be increased without increasing the power supply signal VDD. Thus, while meeting high brightness requirements, the power consumption of the micro-LED driver circuit is avoided.

[0294] The micro-LED driver circuit shown in Figure 1 is illustrated in practical scenarios. One end of the signal generation module is connected to a first power supply voltage VGH, and the other end is connected to a second power supply voltage VGL. When the output of signal generation module 01 outputs a low-level drive signal, the micro-LED does not emit light, and the transistor inside signal generation module 01 does not need to be turned on to connect to the first power supply voltage VGH, resulting in no current flowing within signal generation module 01. When the output of signal generation module 01 outputs a high-level drive signal, the micro-LED emits light, and the transistor inside signal generation module 01 is turned on to connect to the first power supply voltage VGH, causing current to flow within signal generation module 01. In practical applications, the presence of current in the driver circuit in addition to the micro-LED conduction current increases the driver circuit's power consumption. In related art, the driver circuit consumes significant power.

[0295] Figure 32 is a structural schematic diagram of a micro LED driving circuit provided in an embodiment of the present application. As shown in Figure 32, this embodiment provides a micro LED driving circuit, including: a signal generating module 10, a driving module 11 and a micro LED 12; wherein, the signal generating module 10 includes a fourth capacitor C4.

[0296] The signal generation module 10 receives the light-emitting control signal EM and the first comparison reference signal SWEEEP1, and outputs a driving signal based on the light-emitting control signal EM and the first comparison reference signal SWEEEP1. One end of the fourth capacitor C4 is connected to the second comparison reference signal SWEEP2, and the other end of the fourth capacitor C4 is connected to the output end of the signal generation module 10. The first comparison reference signal SWEEEP1 is a linearly increasing ramp signal, and the second comparison signal SWEEP2 is an inverted signal of the first comparison reference signal SWEEEP1.

[0297] Among them, the driving module 11 is connected to the signal generating module 10, one end of the driving module 11 is connected to the power supply signal VDD, and the other end of the driving module 11 is connected to the micro LED 12; wherein, the driving signal is used to control the on or off time of the driving module 11 to control the output time of the conduction current.

[0298] The micro LED 12 is connected to the driving module 11 , and is configured to receive a conduction current and a light-emitting control signal EM, and emit light in response to the light-emitting control signal EM and the conduction current.

[0299] In this embodiment, the micro-LED driving process is divided into three phases: an initialization phase, a row scanning phase, and a comparative light emission phase. During the initialization phase, the input terminal of the signal generation module 10 is set to the reference power supply voltage REF. During the row scanning phase, the signal generation module 10 receives the PWMD signal and sets the input terminal and the output terminal of the signal generation module 10 to approximately the PWMD voltage.

[0300] The light-emission control signal EM is used to control the operating phase of the micro-LED driver circuit, determining whether it is in the comparative light-emission phase. For example, when the light-emission control signal EM is at a first level, the micro-LED driver circuit is currently operating in the comparative light-emission phase; when the light-emission control signal EM is at a second level, the micro-LED driver circuit is currently operating in a non-comparative light-emission phase. It will be understood that when the signal generation module 10 receives the light-emission control signal EM and the light-emission control signal EM is at the first level, the micro-LED driver circuit is currently operating in the comparative light-emission phase, and the signal generation module begins outputting a drive signal to the driver module 11.

[0301] At the beginning of the comparison light-emitting stage, the input end of the signal generation module 10 receives the first comparison reference signal SWEEP1, which is a linearly increasing ramp signal; the output end of the signal generation module 10 is connected to the driving module 11, and the signal generation module 10 outputs a driving signal in a second level state to the driving module 11; the driving module 11 is turned on in response to the driving signal in the second level state, and the micro LED 12 starts to emit light.

[0302] Some time after the comparative light-emitting phase begins, because the level of the first comparison reference signal SWEEP1 is still relatively low, the signal generation module 10 continues to output a drive signal at the second level. Therefore, the driver module 11 remains on, and the micro LED 12 continues to emit light. As the first comparison reference signal SWEEP1 gradually increases until the level of the first comparison reference signal SWEEP1 reaches a higher level, the signal generation module 10 outputs a drive signal at the first level, the driver module 11 turns off, and the micro LED 12 stops emitting light.

[0303] In actual applications, during the comparative light-emitting phase, the signal generation module 10 outputs a driving signal based on the first comparison reference signal SWEEP1. For example, when the first comparison reference signal SWEEP1 is greater than a preset threshold, the signal generation module 10 outputs a driving signal at a first level. When the first comparison reference signal SWEEP2 is less than the preset threshold, the signal generation module 10 outputs a driving signal at a second level.

[0304] In this embodiment, the second comparison reference signal SWEEP2 is applied synchronously with the first comparison reference signal SWEEP1, and the second comparison reference signal SWEEP2 is in opposite phase to the first comparison reference signal SWEEP1. The first comparison reference signal SWEEP1 is a linearly increasing ramp signal, while the second comparison reference signal SWEEP2 is a linearly decreasing ramp signal. Accordingly, when the first comparison reference signal SWEEP1 is less than a preset threshold, the second comparison reference signal SWEEP2 remains relatively high, which has little impact on the voltage at the output of the signal generation module 10 and does not cause a change in the voltage at the output of the signal generation module 10. The signal generation module 10 outputs a driving signal at the second level, and the micro LED 12 continues to emit light. When the first comparison reference signal SWEEP1 rises to the preset threshold, causing the level of the driving signal to change, the second comparison reference signal SWEEP2 decreases to a certain voltage. The second comparison reference signal SWEEP2 causes the voltage at the output of the signal generation module 10 to decrease, causing the signal generation module 10 to output a driving signal at the first level, and the micro LED 12 stops emitting light.

[0305] During the comparative light-emitting phase, when the micro-LEDs are emitting light, the first comparison reference signal SWEEP1 maintains a low level, so the signal generation module 10 outputs a drive signal at the second level. In actual applications, when the signal generation module 10 outputs a high-level drive signal, the driver module 11 turns on, causing the micro-LEDs 12 to emit light. Therefore, the internal transistors of the signal generation module 10 must turn on to transmit the first power supply voltage VGH to the output terminal of the signal generation module 10. At this time, the second comparison reference signal SWEEP2 is relatively high. Due to the effect of the fourth capacitor C4, the second comparison reference signal SWEEP2 does not affect the voltage at the output terminal of the signal generation module 10, and the output terminal of the signal generation module 10 remains stable. Since the fourth capacitor C4 is connected to the output terminal of the signal generation module 10, there is no direct path within the signal generation module 10, thus reducing the on-state current.

[0306] Conversely, when the micro-LED stops emitting light, the first comparison reference signal SWEEP1 maintains a high level, and the signal generation module 10 outputs a drive signal at the first level. In practical applications, when the signal generation module 10 outputs a low-level drive signal, the driver module 11 is turned off, causing the micro-LED 12 to stop emitting light. Therefore, the internal transistor of the signal generation module 10 does not need to be turned on, and the first power supply voltage VGH is transmitted to the output terminal of the signal generation module 10. At this time, as the second comparison reference signal SWEEP2 decreases, the voltage at the output terminal of the signal generation module 10 decreases due to the coupling effect of the fourth capacitor C4, and the signal generation module 10 outputs a low-level drive signal. In practical applications, when the micro-LED is emitting light, the output terminal of the signal generation module 10 is connected to the second comparison reference signal SWEEP2 via the fourth capacitor C4. This prevents direct conduction within the signal generation module 10, reducing the on-state current and the power consumption of the micro-LED driver circuit.

[0307] It will be understood that one end of the driver module 11 is connected to the power supply signal VDD and the other end is connected to the micro-LED 12. When the driver module 11 is turned on, the driver module 11 provides a conduction current to the micro-LED 12; when the driver module 11 is turned off, the driver module 11 stops providing the conduction current to the micro-LED 12. In this embodiment, the micro-LED 12 is connected to the driver module 11 to receive the conduction current and the light-emission control signal EM, and to emit light in response to the light-emission control signal EM and the conduction current. It will be understood that the micro-LED 12 will only emit light when the light-emission control signal EM indicates that the current operating stage of the micro-LED driver circuit is the comparative light-emitting stage and the driver module 11 outputs a conduction current to the micro-LED 12.

[0308] In one embodiment, for the signal generating module 10, in one implementation, FIG33 is a structural diagram of another micro LED driving circuit provided in an embodiment of the present application. As shown in FIG33 , the signal generating module 10 further includes: a fourth transistor T4 and a comparison generating unit 101;

[0309] The gate of the fourth transistor T4 receives the first comparison reference signal SWEEP1, the source of the fourth transistor T4 is connected to the input of the comparison generation unit 101, and the drain of the fourth transistor T4 is connected to the output of the signal generation module 10 and the fourth capacitor C4.

[0310] The comparison generation unit 101 receives a row scan signal SN and is configured to receive a PWMD signal through an input terminal of the comparison generation unit 101 based on the row scan signal SN, so that a source voltage of the fourth transistor T4 is a voltage corresponding to the PWMD signal, and connect the gate of the fourth transistor T4 to the drain of the fourth transistor T4; and

[0311] The comparison generation unit 101 receives the above-mentioned light-emitting control signal EM, and is used to connect the first power supply voltage VGH to the input terminal of the comparison generation unit 101 based on the light-emitting control signal EM, so that the source voltage of the fourth transistor T4 is the first power supply voltage VGH, and compare the gate voltage of the fourth transistor T4, the source voltage of the fourth transistor T4, and the threshold voltage of the fourth transistor T4, and output the above-mentioned driving signal through the output terminal of the comparison generation module 10 based on the comparison result.

[0312] In practical applications, the row scan signal SN is used to indicate whether the current operating phase of the micro-LED driver circuit is the row scan phase. For example, when the row scan signal SN is at a first level, the current operating phase of the micro-LED driver circuit is the row scan phase; when the row scan signal SN is at a second level, the current operating phase of the micro-LED driver circuit is not the row scan phase. In another embodiment, when the row scan signal SN is at the second level, the current operating phase of the micro-LED driver circuit is the row scan phase; when the row scan signal SN is at the first level, the current operating phase of the micro-LED driver circuit is not the row scan phase.

[0313] Wherein, PWMD is a voltage value that changes according to the brightness of the micro LED 12. When the scanning signal indicates that the current working stage of the micro LED driving circuit is the row scanning stage, the input terminal of the comparison generation unit 101 receives the PWMD signal, the source voltage of the fourth transistor T4 is PWMD, and the gate of the fourth transistor T4 is connected to the drain of the fourth transistor T4, and the voltage of the gate of the fourth transistor T4 and the drain of the fourth transistor T4 are equal to PWMD+V th4 , where V th4 It is understood that based on the row scanning signal SN, the comparison generation unit 101 realizes compensation for the threshold voltage of the fourth transistor T4, thereby preventing the threshold voltage of the fourth transistor T4 from affecting the comparison result of the subsequent comparison light emitting phase.

[0314] In actual applications, during the comparison light-emitting stage, the comparison generation unit 101 receives the light-emitting control signal EM. When the light-emitting control signal EM indicates that the current working stage of the micro-LED driving circuit is the comparison light-emitting stage, the input end of the comparison generation unit 101 is connected to the first power supply voltage VGH, and the source voltage of the fourth transistor T4 is the above-mentioned first power supply voltage VGH.

[0315] Combined with the above example, after the row scanning phase, the gate voltage of the fourth transistor T4 is equal to the drain voltage of the fourth transistor T4, both being PWMD+V th4 In this embodiment, in the comparison light-emitting stage, the gate of the fourth transistor T4 receives the first comparison reference signal SWEEP1, which is a linearly increasing ramp signal. Specifically, as the first comparison reference signal SWEEP1 continues to increase, the gate voltage of the fourth transistor T4 increases. The gate voltage of the fourth transistor T4 can be expressed as PWMD+V th4 +ΔSWEEP1, where ΔSWEEP1 is the variation of the first comparison reference signal SWEEP1. th4 +ΔSWEEP1 is less than VGH+V th4 When PWMD+V th4 +ΔSWEEP1 is greater than VGH+V th4 When , the fourth transistor T4 is turned off, and the output end of the signal generating module 10 outputs a driving signal in the first level state.

[0316] In actual applications, in the row scanning stage, the comparison generation unit 101 compensates the threshold voltage of the fourth transistor T4 based on the row scanning signal SN; in the comparison light-emitting stage, based on the light-emitting control signal EM, the gate voltage of the fourth transistor T4 is compared with the sum of the source voltage of the fourth transistor T4 and the threshold voltage of the fourth transistor T4, and the above-mentioned driving signal is output through the output end of the signal generation module 10 based on the comparison result.

[0317] In this embodiment, the comparison and generation unit 101 compensates for the threshold voltage of the fourth transistor T4 based on the row scanning signal SN, and compares the gate voltage of the fourth transistor T4 with the sum of the source voltage of the fourth transistor T4 and the threshold voltage of the fourth transistor T4 based on the light-emitting control signal EM. Based on the comparison result, the driving signal is output through the output terminal of the signal generation module 10. The driving module 11 is turned on or off based on the driving signal, and can control the output duration of the on-current.

[0318] Regarding the comparison generation unit 101, in one embodiment, FIG34 is a schematic structural diagram of another micro-LED driving circuit provided in an embodiment of the present application. As shown in FIG34, the comparison generation unit 101 includes: a fifth transistor T5, a sixth transistor T6, and a seventh transistor T7;

[0319] The source of the fifth transistor T5 is connected to the first power supply voltage VGH, the gate of the fifth transistor T5 receives the light-emitting control signal EM, and the drain of the fifth transistor T5 is connected to the source of the sixth transistor T6 and the source of the fourth transistor T4, and is configured to be turned on or off in response to the light-emitting control signal EM.

[0320] The gate of the sixth transistor T6 receives the row scan signal SN, and the drain of the sixth transistor T6 receives the PWMD signal, and is configured to be turned on or off in response to the row scan signal SN.

[0321] The gate of the seventh transistor T7 receives the row scan signal SN, the source of the seventh transistor T7 is connected to the gate of the fourth transistor T4, and the drain of the seventh transistor T7 is connected to the fourth transistor T4, and is configured to be turned on or off in response to the light emitting control signal EM.

[0322] In actual applications, when the light-emitting control signal EM indicates that the current working stage of the micro-LED driving circuit is the comparative light-emitting stage, the fifth transistor T5 is turned on, and the input end of the comparison generation unit 101 is connected to the first power supply voltage VGH via the turned-on fifth transistor T5, and the source of the fourth transistor T4 is set to the first power supply voltage VGH.

[0323] In actual applications, when the row scan signal SN indicates that the current working phase of the micro LED driving circuit is the scanning phase, the sixth transistor T6 is turned on, and the input end of the comparison generation unit 101 receives the PWMD signal through the turned-on sixth transistor T6, and sets the source of the fourth transistor T4 to the voltage corresponding to the PWMD signal.

[0324] In actual applications, when the row scan signal SN indicates that the current working stage of the micro LED driving circuit is the scanning stage, the seventh transistor T7 is turned on, and the gate of the fourth transistor T4 and the drain of the fourth transistor T4 are connected via the turned-on seventh transistor T7 to form a diode structure, so that the gate voltage of the fourth transistor T4 is equal to the drain voltage of the fourth transistor T4.

[0325] It can be understood that in the comparison light emitting stage, as the first comparison reference signal SWEEP1 continues to increase, the gate voltage of the fourth transistor T4 gradually increases. The gate voltage of the fourth transistor T4 can be expressed as PWMD+V th4 +ΔSWEEP1, where ΔSWEEP1 is the variation of the first comparison reference signal SWEEP1. th4 +ΔSWEEP is less than VGH+V th4 When PWMD+V th4 +ΔSWEEP1 is greater than VGH+V th4 When the sixth transistor T6 is turned off, the output end of the signal generating module 10 is connected to the fourth capacitor C4, the second comparison reference signal SWEEP2 is small, and the voltage of the output end of the signal generating module 10 is reduced through the coupling effect of the fourth capacitor C4, and the output end of the signal generating module 10 outputs the driving signal of the first level state.

[0326] In this embodiment, in the row scanning stage, the sixth transistor T6 and the seventh transistor T7 compensate for the threshold voltage of the fourth transistor T4 based on the row scanning signal SN; in the comparative light-emitting stage, the fifth transistor T5 is turned on in response to the light-emitting control signal EM, and compares the gate voltage of the fourth transistor T4 with the sum of the source voltage of the fourth transistor T4 and the threshold voltage of the fourth transistor T4, and outputs the above-mentioned driving signal through the output end of the signal generation module 10 based on the comparison result.

[0327] Regarding the comparison generation unit 101, in one embodiment, FIG35 is a schematic structural diagram of another micro LED driving circuit provided by an embodiment of the present application. As shown in FIG35, the signal generation module 10 further includes: a third capacitor C3;

[0328] One end of the third capacitor C3 receives the first comparison reference signal SWEEP1 , and the other end of the third capacitor C3 is connected to the gate of the fourth transistor T4 .

[0329] In combination with the above example, in the row scanning phase, the comparison generation unit 101 receives the PWMD signal through the input terminal of the comparison generation unit 101 based on the row scanning signal SN, so that the source voltage of the fourth transistor T4 is the voltage corresponding to the PWMD signal, and the gate of the fourth transistor T4 is connected to the drain of the fourth transistor T4. For example, at the start of the row scanning phase, the gate voltage of the fourth transistor T4 is higher than PWMD+V th4 , the gate of the fourth transistor T4 discharges to the third capacitor C3 until the gate voltage of the fourth transistor T4 is PWMD+V th4 , achieving compensation for the threshold voltage of the fourth transistor T4. At the start of the row scanning phase, the gate voltage of the fourth transistor T4 is lower than PWMD+V th4 , the third capacitor C3 discharges to the gate of the fourth transistor T4 until the gate voltage of the fourth transistor T4 is PWMD+V th4 , achieving compensation for the threshold voltage of the fourth transistor T4.

[0330] In actual applications, during the comparison light-emitting phase, the fourth transistor T4 receives the first comparison reference signal SWEEP1 via the third capacitor C3. As the first comparison reference signal SWEEP1 increases, the gate voltage of the fourth transistor T4 increases. The comparison generation unit 101 compares the gate voltage of the fourth transistor T4 with the sum of the source voltage of the fourth transistor T4 and the threshold voltage of the fourth transistor T4, and outputs the aforementioned drive signal through the output terminal of the signal generation module 10 based on the comparison result.

[0331] In this embodiment, the gate of the fourth transistor T4 receives the first comparison reference signal SWEEP1 via the third capacitor C3. During the row scanning phase, the third capacitor C3 is used to compensate for the threshold voltage of the fourth transistor T4. During the comparison light emission phase, as the first comparison reference signal SWEEP1 decreases, the gate voltage of the fourth transistor T4 decreases due to the coupling effect of the third capacitor C3. The drive signal is obtained by comparing the gate voltage of the fourth transistor T4 with the source voltage of the fourth transistor T4 and the threshold voltage of the fourth transistor T4.

[0332] Regarding the signal generating module 10, in one embodiment, the signal generating module 10 further includes: an initialization unit;

[0333] The initialization unit is connected to the fourth transistor T4 and is configured to receive a reset signal RESET and initialize the micro LED circuit based on the reset signal RESET.

[0334] The reset signal RESET is used to indicate whether the current micro-LED driver circuit is in the reset phase. For example, when the reset signal RESET is at a first level, the current micro-LED driver circuit is in the reset phase; when the reset signal RESET is at a second level, the current micro-LED driver circuit is not in the reset phase.

[0335] Specifically, when the reset signal RESET indicates that the working phase of the micro LED driving circuit is the reset phase, the initialization unit initializes the micro LED driving circuit.

[0336] In this embodiment, the initialization unit responds to the reset signal RESET and can initialize the micro LED driving circuit during the reset phase.

[0337] Regarding the signal generating module 10 , in one embodiment, the initialization unit includes: a ninth transistor;

[0338] The source of the ninth transistor is connected to the reference power supply voltage REF, the gate of the ninth transistor receives the reset signal RESET, and the drain of the ninth transistor is connected to the gate of the fourth transistor T4, for being turned on or off in response to the reset signal RESET.

[0339] It can be understood that when the reset signal RESET indicates that the current working stage of the micro LED driving circuit is the reset stage, the ninth transistor is turned on, and the gate of the fourth transistor T4 is connected to the above-mentioned reference power supply voltage REF via the turned-on ninth transistor, that is, the gate voltage of the ninth transistor is set to the reference power supply voltage REF.

[0340] In the micro-LED driving circuit provided in this embodiment, the signal generating module includes a fourth capacitor, the signal generating module receives a light-emitting control signal and a first comparison reference signal, and outputs a driving signal based on the light-emitting control signal and the first comparison reference signal; one end of the fourth capacitor is connected to the output end of the signal generating module, and the other end of the fourth capacitor receives a second comparison reference signal; wherein, the first comparison reference signal is a linearly increasing ramp signal; the second comparison signal is an inverted signal of the first comparison reference signal; the driving module is connected to the signal generating module, one end of the driving module is connected to the power supply signal, and the other end of the driving module is connected to the micro-LED; wherein, the driving signal is used to control the on or off time of the driving module to control the output time of the on current; the micro-LED is connected to the driving module to receive the on current and the light-emitting control signal, and emits light in response to the light-emitting control signal and the on current. In the solution of this embodiment, the second comparison reference signal and the first comparison reference signal are applied synchronously, and the second comparison reference signal and the first comparison reference signal are in opposite phases. During the comparison light-emitting stage, when the first comparison reference signal is small, the signal generation module outputs a drive signal at the second level, causing the micro-LED to emit light. At this time, the internal transistor of the signal generation module is turned on, transmitting the power supply voltage to the output terminal of the signal generation module. In addition, the output terminal of the signal generation module receives the second comparison reference signal via a fourth capacitor, eliminating a direct conductive path within the signal generation module and reducing the internal current of the signal generation module. Correspondingly, when the first comparison reference signal is large, the second comparison reference signal is small, and the signal generation module generates a drive signal at the first level, causing the micro-LED to not emit light. At this time, the internal transistor of the signal generation module is not turned on, and no current flows. The output terminal of the signal generation module receives the second comparison reference signal via the first capacitor, and the voltage at the output terminal of the signal generation module can be adjusted via the fourth capacitor to output the drive signal at the first level. In practice, when the micro-LED emits light, the current flowing within the signal generation module is small. When the micro-LED does not emit light, the current flowing within the signal generation module is eliminated, thereby reducing the power consumption of the micro-LED driving circuit.

[0341] FIG36 is a schematic structural diagram of another micro LED driving circuit provided in an embodiment of the present application. As shown in FIG36 , the driving module 11 includes: a driving transistor T0.

[0342] The control terminal of the driving transistor T0 is connected to the output terminal of the signal generating module 10 , the source of the driving transistor T0 is connected to the power supply signal VDD, and the drain of the driving transistor T0 is connected to the micro LED 12 .

[0343] In actual applications, the control terminal of the driving transistor T0 is connected to the output terminal of the signal generating module 10 to receive the driving signal. The driving transistor T0 is turned on or off in response to the driving signal. In one example, the driving transistor T0 is turned on in response to the driving signal in the second level state and is turned off in response to the driving signal in the first level state. Specifically, when the driving signal output by the signal generating module 10 is in the second level state, the driving transistor T0 is turned on, and the micro LED 12 emits light; when the driving signal output by the signal generating module 10 is in the first level state, the driving transistor T0 is turned off, and the micro LED 12 is turned off.

[0344] In this embodiment, the driving module includes a driving transistor, the control end of the driving transistor is connected to the output end of the above-mentioned signal generating module, the source of the driving transistor is connected to the above-mentioned power supply signal, and the drain of the driving transistor is connected to the micro LED. The driving module controls the conduction and shutdown of the driving transistor based on the driving signal, thereby realizing the control of the conduction time of the micro LED.

[0345] In one embodiment, FIG37 is a schematic structural diagram of another micro LED driving circuit provided in an embodiment of the present application. As shown in FIG37 , the driving module 11 further includes: a twelfth transistor T12, a thirteenth transistor T13, and a fourteenth transistor T14;

[0346] Among them, the source of the twelfth transistor T12 is connected to the above-mentioned first power supply voltage VGH, the gate of the twelfth transistor T12 receives the above-mentioned light-emitting control signal EM, and the drain of the twelfth transistor T12 is connected to the source of the above-mentioned thirteenth transistor T13, which is used to be turned on or off in response to the above-mentioned light-emitting control signal EM.

[0347] The gate of the thirteenth transistor T13 is connected to the output terminal of the signal generating module 10 , and the drain of the thirteenth transistor T13 is connected to the source of the fourteenth transistor T14 and the control terminal of the driving transistor T0 , so as to be turned on or off in response to the driving signal.

[0348] The gate of the fourteenth transistor T14 receives the row scan signal SN, and the source of the fourteenth transistor T14 receives the PAMD signal, so as to be turned on or off in response to the row scan signal SN.

[0349] In conjunction with the above example, the light-emission control signal EM is used to control the operating phase of the micro-LED driver circuit, determining whether it is the comparative light-emission phase. When the light-emission control signal EM indicates that the current operating phase of the micro-LED driver circuit is the comparative light-emission phase, the twelfth transistor T12 is turned on and transmits the first power supply voltage VGH to the source of the thirteenth transistor T13. When the light-emission control signal EM indicates that the current operating phase of the micro-LED driver circuit is not the comparative light-emission phase, the twelfth transistor T12 is turned off.

[0350] In practical applications, the output terminal of the signal generation module 10 is used to output the aforementioned drive signal to the thirteenth transistor T13. In conjunction with the above example, the thirteenth transistor T13 can be controlled to be turned on and off based on the level of the drive signal. When the PWM signal is at the second level, the thirteenth transistor T13 is turned off; when the PWM signal is at the first level, the thirteenth transistor T13 is turned on.

[0351] It can be understood that during the row scanning phase, when the fourteenth transistor T14 is turned on, the voltage at the control terminal of the driving transistor T0 is set to the voltage value corresponding to the PAMD signal. During the comparative light-emitting phase, when the thirteenth transistor T13 is turned off, the voltage at the control terminal of the driving transistor T0 is set to the voltage value corresponding to the PAMD signal, the driving transistor T0 is turned on, the driving module 11 outputs the on-current, and the micro-LED 12 emits light. Correspondingly, during the comparative light-emitting phase, when the twelfth transistor T12 is turned on and the level of the driving signal is at the first level, when the thirteenth transistor T13 is turned on, the first power supply voltage VGH is transmitted to the drain of the thirteenth transistor T13, i.e., the control terminal of the driving transistor T0, via the turned-on twelfth transistor T12 and the turned-on thirteenth transistor T13. The driving transistor T0 is turned off, the driving module 11 stops outputting the on-current, and the micro-LED 12 stops emitting light.

[0352] In this embodiment, the thirteenth transistor T13 is turned on or off in response to the driving signal, and controls the driving transistor T0 to be turned on or off, thereby achieving control over the output duration of the on-current.

[0353] In one embodiment, FIG38 is a structural diagram of another micro LED driving circuit provided in Example 2 of the present application. As shown in FIG38 , the driving module 11 further includes: a fifteenth transistor T15;

[0354] Among them, the gate of the fifteenth transistor T15 receives the above-mentioned light-emitting control signal EM, the source of the fifteenth transistor T15 is connected to the above-mentioned power supply signal VDD, and the drain of the fifteenth transistor T15 is connected to the source of the above-mentioned driving transistor T0, and is used to respond to the above-mentioned light-emitting control signal EM and control the connection and disconnection of the above-mentioned driving transistor T0 and the above-mentioned power supply signal VDD.

[0355] In conjunction with the above example, the on and off state of the driving transistor T0 is related to the output of the conduction current. Turning on the driving transistor T0 during the non-comparison light-emitting phase can affect the accuracy of the light emission of the micro-LED 12. It can be understood that a fifteenth transistor T15 is provided between the source of the driving transistor T0 and the power supply signal VDD. If the current operating phase of the micro-LED driving circuit is the comparison light-emitting phase, the fifteenth transistor T15 is turned on, and the source of the driving transistor T0 is connected to the power supply signal VDD via the fifteenth transistor T15. If the current operating phase of the micro-LED driving circuit is not the comparison light-emitting phase, the fifteenth transistor T15 is turned off, and the source of the driving transistor T0 is disconnected from the power supply signal VDD. This prevents the micro-LED 12 from emitting light due to the conduction of the driving transistor T0 during the non-comparison light-emitting phase. This embodiment improves the accuracy of the light emission of the micro-LED 12.

[0356] In one embodiment, the driving module 11 further includes: a sixth capacitor;

[0357] One end of the sixth capacitor is connected to the power supply signal VDD, and the other end of the sixth capacitor is connected to the control end of the driving transistor T0.

[0358] In combination with the above example, the driving module 11 is connected to the signal generating module 10 to receive the driving signal; when the driving signal is at the second level state, the driving transistor T0 is turned on, and when the driving signal is at the first level state, the driving transistor T0 is turned off.

[0359] In this embodiment, the sixth capacitor can filter the signal at the control terminal of the driving transistor T0 to ensure the voltage at the control terminal of the driving transistor T0 is stable, thereby achieving accurate control of the driving transistor T0.

[0360] In this embodiment, the driving module includes a driving crystal, the control end of the driving transistor is connected to the output end of the above-mentioned signal generating module, the source of the driving transistor is connected to the above-mentioned power supply signal, and the drain of the driving transistor is connected to the micro LED. The driving module controls the conduction and shutdown of the driving transistor based on the driving signal, thereby realizing the control of the conduction time of the micro LED.

[0361] Figure 39 is a structural schematic diagram of another micro LED driving circuit provided in an embodiment of the present application. As shown in Figure 39, this embodiment provides a micro LED driving circuit, including: a signal generating module 10, a driving module 11 and a micro LED 12.

[0362] In this embodiment, the signal generation module 10 includes: a fourth transistor T4, a fifth transistor T5, a sixth transistor T6, a seventh transistor T7, a ninth transistor T9, a fourth capacitor C4, and a third capacitor C3; the driving module 11 includes: a driving transistor T0, a twelfth transistor T12, a thirteenth transistor T13, a fourteenth transistor T14, a fifteenth transistor T15, and a sixth capacitor C6. The reset signal is RESET, the row scan sub-signal is SN, the comparison reference signal is SWEEP, the light emission control signal is EM, the power supply signal is VDD, the first power supply voltage is VGH, and the reference power supply voltage is REF.

[0363] In one example, the transistor is turned on in response to a signal in a first level state, and is turned off in response to a signal in a second level state.

[0364] For example, the transistors are all P-type thin film transistors, the first level state is a low level, and the second level state is a high level. Correspondingly, the anode of the micro LED 12 is connected to the drain of the driving transistor T0, and the anode of the micro LED 12 receives the light emission control signal EM.

[0365] The above transistors are all N-type thin film transistors, the first level state is a high level, and the second level state is a low level.

[0366] In one example, the working phases of the micro LED driving circuit are divided into: an initialization phase, a row scanning phase, and a comparative light emitting phase.

[0367] In this example, in the initialization stage, the reset signal RESET is in the first level state, and the row scan signal SN and the light-emitting control signal EM are in the second level state; in the row scan stage, the row scan signal SN first changes from the second level state to the first level state, and then changes from the first level state to the second level state; the reset signal RESET and the light-emitting control signal EM are in the second level state; in the comparative light-emitting stage, the light-emitting control signal EM is in the first level state, and the reset signal RESET and the row scan signal SN are in the second level state.

[0368] To facilitate understanding of the operation of the micro-LED driver circuit, the following examples illustrate the present embodiment. For example, the aforementioned transistors are all P-type thin-film transistors, which conduct in response to a low-level signal and disconnect in response to a high-level signal. The states of the various signals are shown in Figure 40, which is another signal state diagram provided by the present embodiment.

[0369] 39 and 40 , in the initialization stage, the reset signal RESET is in a low level state, the row scan signal SN and the light emitting control signal EM are in a high level state; the ninth transistor T9 is turned on in response to the reset signal, and the remaining transistors are turned off. The ninth transistor T9 is turned on to set the gate voltage of the fourth transistor T4 to the reference power supply voltage REF.

[0370] In conjunction with Figures 39 and 40, in the above-mentioned row scanning phase, the above-mentioned row scanning signal SN first changes from a high level state to a low level state, and then changes from a low level state to a high level state; the above-mentioned reset signal RESET and the above-mentioned light-emitting control signal EM are in a high level state; the sixth transistor T6, the seventh transistor T7, and the fourteenth transistor T14 are first turned on and then turned off in response to the row scanning signal SN, the fourth transistor T4 is turned on, and the remaining transistors are turned off. The sixth transistor T6 is turned on, setting the source voltage of the fourth transistor T4 to PWMD; the seventh transistor T7 is turned on, and the gate of the fourth transistor T4 is connected to the drain of the fourth transistor T4, forming a diode structure between points A and B; the gate voltage of the fourth transistor T4 and the drain voltage of the fourth transistor T4 are set to PWMD+V through the third capacitor C3. th4 The fourteenth transistor T14 is turned on, setting the voltage of the control terminal of the driving transistor T0 to PAMD.

[0371] 39 and 40 , in the comparative light-emitting stage, the light-emitting control signal EM is in a low-level state, the reset signal and the row scan signal SN are in a high-level state, the fifth transistor T6, the twelfth transistor T12, and the fifteenth transistor T15 are turned on in response to the light-emitting control signal EM, and the sixth transistor T6, the seventh transistor T7, and the fourteenth transistor T14 are turned off in response to the row scan signal SN.

[0372] Specifically, as the first comparison reference signal SWEEP1 increases, the gate voltage of the fourth transistor T4 increases. th4 +ΔSWEEP1 is less than VGH+V th4 When , the fourth transistor T4 is turned on, the output end of the signal generating module 10 is connected to the first power supply voltage VGH via the turned-on fourth transistor T4 and the fifth transistor T5, the second comparison reference signal SWEEP2 decreases, VGH charges the fourth capacitor C4 via the turned-on fourth transistor T4 and the fifth transistor T5, the voltage at the output end of the signal generating module 10 remains stable, the signal generating module 10 outputs a high-level driving signal, the thirteenth transistor T13 is turned off, the voltage of the driving transistor T0 is PAMD, the driving transistor T0 is turned on, and the micro LED 12 emits light.

[0373] Correspondingly, when PWMD+Vth4 +ΔSWEEP1 is greater than VGH+V th4 When the fourth transistor T4 is turned off, the output end of the signal generating module 10 is connected to the fourth capacitor C4. At this time, the second comparison reference signal SWEEP2 is small. Through the coupling effect of the fourth capacitor C4, the voltage of the output end of the signal generating module 10 is reduced. The signal generating module 10 outputs a low-level driving signal. The thirteenth transistor T13 is turned on. The control end of the driving transistor T0 is connected to the first power supply voltage VGH via the turned-on thirteenth transistor T13 and the turned-on twelfth transistor T12. The driving transistor T0 is turned off, and the micro LED 12 stops emitting light.

[0374] In the micro-LED driving circuit provided in this embodiment, the signal generating module receives a light-emitting control signal, a first comparison reference signal, and a second comparison reference signal, and outputs a driving signal based on the light-emitting control signal, the first comparison reference signal, and the second comparison reference signal; wherein the first comparison reference signal is a linearly increasing ramp signal; the second comparison signal is an inverted signal of the first comparison reference signal; the driving module is connected to the signal generating module, one end of the driving module is connected to the power supply signal, and the other end of the driving module is connected to the micro-LED; wherein the driving signal is used to control the on or off duration of the driving module to control the output duration of the on-current; the micro-LED is connected to the driving module to receive the on-current and the light-emitting control signal, and emits light in response to the light-emitting control signal and the control of the on-current. In the solution of this embodiment, the second comparison reference signal and the first comparison reference signal are applied synchronously, and the second comparison reference signal and the first comparison reference signal are in opposite phases. During the comparison light-emitting phase, when the first comparison reference signal is small, the signal generation module outputs a drive signal at the second level, causing the micro-LED to emit light. At this time, the internal transistor of the signal generation module is turned on, transmitting the power supply voltage to the output terminal of the signal generation module. In addition, the output terminal of the signal generation module receives the second comparison reference signal via a fourth capacitor, eliminating a direct conductive path within the signal generation module and reducing the internal current of the signal generation module. Correspondingly, when the first comparison reference signal is large, the second comparison reference signal is small, and the signal generation module generates a drive signal at the first level, causing the micro-LED to not emit light. At this time, the internal transistor of the signal generation module is not turned on, and no current flows. The output terminal of the signal generation module receives the second comparison reference signal via the fourth capacitor, which can adjust the voltage at the output terminal of the signal generation module to output the drive signal at the first level. In practice, when the micro-LED emits light, the current flowing within the signal generation module is small. When the micro-LED does not emit light, the current flowing within the signal generation module is eliminated, thereby reducing the power consumption of the micro-LED driver circuit.

[0375] It should be understood that the present application is not limited to the exact structure described above and shown in the drawings, and that various modifications and changes may be made without departing from the scope thereof. The scope of the present application is limited only by the appended claims.

Claims

1. A micro LED driving circuit, comprising: Signal generation module, driver module and micro LED; The signal generating module is used to receive a light-emitting control signal and a first comparison reference signal, and output a PWM signal based on the light-emitting control signal and the first comparison reference signal; wherein the first comparison reference signal is a linearly increasing ramp signal; and the PWM signal is a PWM signal with specific different pulse widths; The driving module is connected to the signal generating module, the driving module includes a driving transistor and a correction unit, one end of the driving module is connected to the power supply signal, and the other end of the driving module is connected to the micro LED; the correction unit is connected to the driving transistor, the correction unit receives the PAMD signal, the PWM signal and the second comparison reference signal, and is used to transmit the second comparison reference signal to the control end of the driving transistor when the PWM signal is in a first level state, and transmit the PAMD signal to the control end of the driving transistor when the PWM signal is in a second level state; wherein the second comparison reference signal has the same change trend as the first comparison reference signal; The micro LED is connected to the driving module, and is used to receive the conduction current and the light-emitting control signal, and emit light in response to the light-emitting control signal and the control of the conduction current.

2. The micro LED driving circuit according to claim 1, wherein the correction unit comprises: a first capacitor and a first transistor; One end of the first capacitor is connected to the second comparison reference signal, and the other end of the first capacitor is connected to the source of the first transistor; The gate of the first transistor is connected to the output end of the signal generating module, and the drain of the first transistor is connected to the control end of the driving transistor, and is used to be turned on or off in response to the PWM signal.

3. The micro LED driving circuit according to claim 1, wherein the correction unit further comprises: a second transistor; The drain of the second transistor is connected to the control terminal of the driving transistor; The gate of the second transistor receives a row scan signal, and the source of the second transistor receives the PAMD signal, so as to be turned on or off in response to the row scan signal.

4. The micro LED driving circuit according to claim 3, wherein the driving module further comprises: A third transistor; The gate of the third transistor receives the light-emitting control signal, the source of the third transistor is connected to the power supply signal, and the drain of the third transistor is connected to the source of the driving transistor, and is used to respond to the light-emitting control signal and control the connection and disconnection of the driving transistor and the power supply signal.

5. The micro LED driving circuit according to claim 1, wherein the driving module further comprises: A second capacitor; One end of the second capacitor is connected to the power supply signal, and the other end of the second capacitor is connected to the control end of the driving transistor.

6. The micro LED driving circuit according to claim 1, wherein the signal generating module comprises: a fourth transistor and a comparison generating unit; The gate of the fourth transistor receives the comparison reference signal, the source of the fourth transistor is connected to the input terminal of the comparison generation unit, and the drain of the fourth transistor is connected to the output terminal of the signal generation module; The comparison generation unit receives a row scan signal, and is used to receive a PWMD signal through an input terminal of the comparison generation unit based on the row scan signal, so that the source voltage of the fourth transistor is a voltage corresponding to the PWMD signal, and the gate of the fourth transistor is connected to the drain of the fourth transistor; and The comparison generation unit receives the light-emitting control signal, and is used to connect the first power supply voltage through the input end of the comparison generation unit based on the light-emitting control signal, so that the source voltage of the fourth transistor is the first power supply voltage, and compare the gate voltage of the fourth transistor with the source voltage of the fourth transistor and the sum of the threshold voltage of the fourth transistor, and output the PWM signal through the output end of the comparison generation module based on the comparison result.

7. The micro LED driving circuit according to claim 6, wherein the comparison generating unit comprises: a fifth transistor, a sixth transistor, a seventh transistor, and an eighth transistor; The source of the fifth transistor is connected to the first power supply voltage, the gate of the sixth transistor receives the light emitting control signal, the drain of the fifth transistor is connected to the source of the sixth transistor and the source of the fourth transistor. connected, and used to be turned on or off in response to the light emitting control signal; The gate of the sixth transistor receives the row scan signal, and the drain of the sixth transistor receives the PWMD signal, and is used to be turned on or off in response to the row scan signal; The gate of the seventh transistor receives the row scanning signal, the source of the seventh transistor is connected to the gate of the fourth transistor, the drain of the seventh transistor is connected to the drain of the fourth transistor and the source of the eighth transistor, and is used to be turned on or off in response to the light emitting control signal; The gate of the eighth transistor receives the light emitting control signal, and the drain of the eighth transistor is connected to a second power supply voltage, so as to be turned on or off in response to the light emitting control signal.

8. The micro LED driving circuit according to claim 6, wherein the comparison generation unit further comprises: The third capacitor; One end of the third capacitor receives the first comparison reference signal, and the other end of the second capacitor is connected to the gate of the fourth transistor.

9. The micro LED driving circuit according to claim 6, wherein the signal generating module further comprises: a fourth capacitor; One end of the fourth capacitor is connected to the power supply signal, and the other end of the fourth capacitor is connected to the output end of the signal generating module.

10. The micro LED driving circuit according to claim 6, wherein the signal generating module further comprises: Initialize the unit; The initialization unit is connected to the fourth transistor, and is used to receive a reset signal and initialize the micro LED circuit based on the reset signal.

11. The micro LED driving circuit according to claim 10, wherein the initialization unit comprises: The ninth transistor; The source of the ninth transistor is connected to the reference power supply voltage, the gate of the ninth transistor receives a reset signal, and the drain of the ninth transistor is connected to the gate of the fourth transistor for being turned on or off in response to the reset signal. 12 . The micro LED driving circuit according to claim 1 , wherein the transistor is turned on in response to a signal in a first level state, and is turned off in response to a signal in a second level state.

13. The micro LED driving circuit according to any one of claims 1 to 11, wherein the working stages of the micro LED driving circuit are divided into: an initialization stage, a row scanning stage, and a comparative light emission stage; In the initialization stage, the reset signal is in the first level state, and the row scanning signal and the light emitting control signal are in the second level state; In the row scanning stage, the row scanning signal first changes from the second level state to the first level state, and then changes from the first level state to the second level state; The reset signal and the light emitting control signal are in the second level state; In the comparison light-emitting stage, the light-emitting control signal is in the first level state, and the reset signal and the row scanning signal are in the second level state.

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