Coulomb damping monitoring method and device based on friction volt effect

Coulomb damping monitoring is performed through the current signal generated by the friction volt effect, which solves the problem of poor results in complex environments, and realizes low power consumption and high sensitivity state monitoring, which is suitable for wireless monitoring in complex environments.

CN120468258APending Publication Date: 2025-08-12XI AN JIAOTONG UNIV
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Patent Information

Application Number
CN202510610145.1
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-05-13
Publication Date
2025-08-12

AI Technical Summary

Technical Problem

The traditional Coulomb damping monitoring method has limited effect in complex working environments such as high noise and high temperature, high cost, poor real-time performance, difficult maintenance, and relying on external power supply to produce large system power consumption, making it not suitable for long-term and low-energy wireless monitoring applications.

Method used

Based on the friction volt effect, the friction between the metal elastic support structure and the semiconductor is generated, and the current is protected by the signal conditioning system. The signal acquisition system records the current signal, and the current signal is analyzed through the data processing system to judge the operating status of the bearing, achieving low power consumption and high sensitivity monitoring.

Benefits of technology

It realizes in-situ, continuous and real-time Coulomb damping state monitoring, has anti-interference ability, reduces system power consumption, and has multi-parameter fusion perception ability, and supports Coulomb damping state evaluation, fault warning and life prediction.

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Abstract

The invention relates to the technical field of mechanical state monitoring, in particular to a coulomb damping monitoring method and device based on a friction volt effect, and can solve the problems that a traditional method is particularly limited in effect in complex working environments such as high noise and high temperature, and is high in cost, poor in real-time performance and difficult to maintain generally to a certain extent. The coulomb damping monitoring method based on the friction volt effect comprises the steps that in the running process of a bearing, current is generated through friction between a metal elastic supporting structure and a semiconductor, the magnitude of the current changes along with coulomb damping, and the characteristics of the semiconductor can remarkably affect the magnitude of the current; the current is protected through a signal conditioning system, and interference of a semiconductor and a fixed structure on the current is reduced; collecting and recording the current signal through a signal acquisition system; the data processing system analyzes the current signal and judges the running state of the bearing.
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Description

Technical Field

[0001] The present application relates to the technical field of mechanical state monitoring, and in particular to a Coulomb damping monitoring method and device based on the friction volt effect. Background Art

[0002] At present, Coulomb damping monitoring mainly relies on traditional methods such as vibration, temperature and acoustics. These methods have certain limitations in practical applications. Although vibration monitoring can provide certain fault diagnosis capabilities, it is easily interfered by environmental noise and requires complex signal processing to accurately distinguish between faults and normal operation. Temperature monitoring can only indirectly reflect the Coulomb damping state and it is difficult to accurately judge the type and degree of faults. Although acoustic monitoring is more sensitive to minor faults, it is also easily affected by environmental noise and requires complex algorithm support.

[0003] Traditional methods are particularly effective in complex working environments such as high noise and high temperature, and generally have problems such as high cost, poor real-time performance, and difficult maintenance. In addition, these methods usually rely on external power supply, resulting in high system power consumption and are not suitable for long-term, low-energy wireless monitoring applications.

[0004] Therefore, there is an urgent need for a new type of monitoring technology that can achieve low power consumption, high sensitivity, strong anti-interference ability, adapt to complex working environments and provide accurate Coulomb damping state monitoring. Summary of the Invention

[0005] In order to solve the problems that traditional methods are particularly limited in effectiveness in complex working environments such as high noise and high temperature, and generally have high costs, poor real-time performance, and difficult maintenance, the present application provides a Coulomb damping monitoring method and device based on the friction volt effect.

[0006] The embodiment of the present application is implemented as follows:

[0007] In a first aspect, the present application provides a Coulomb damping monitoring method based on the tribovolt effect, comprising:

[0008] During the operation of the bearing, the friction between the metal elastic support structure and the semiconductor generates current, the magnitude of which varies with Coulomb damping. The characteristics of the semiconductor significantly affect the magnitude of the current.

[0009] Protecting the current through a signal conditioning system to reduce interference with the current caused by semiconductors and fixed structures;

[0010] Collecting and recording the current signal through a signal acquisition system;

[0011] The current signal is analyzed by the data processing system to determine the operating status of the bearing.

[0012] In one possible implementation, the work function of the semiconductor is significantly different from that of the metal elastic support structure, and the semiconductor has fast carrier mobility, high mechanical strength, or a self-healing interface.

[0013] In a possible implementation, the contact interface between the semiconductor and the metal is an ohmic contact, which ensures a linear relationship between current and voltage and smooth passage of electrons.

[0014] In a possible implementation, the semiconductor is connected to a signal acquisition system via an electrode, and the impedance of the electrode and the semiconductor is extremely small after being fixed.

[0015] In a possible implementation, the electrode is fixed on the semiconductor by pressing with a mechanical external force and keeping the temperature at 230° C. for 3 minutes.

[0016] In one possible implementation, the electrode and the metal elastic support structure are located on the same side of the semiconductor, so that electrons flow on the surface and avoid vertically penetrating the semiconductor material.

[0017] In a possible implementation, the signal conditioning system provides insulators between the top fixed structure and the metal elastic support structure, and between the semiconductor and the bottom fixed structure, respectively, to isolate the influence of external structures on the current.

[0018] In a possible implementation, the signal acquisition system uses a voltage / current indicating instrument with an accuracy of six and a half digits or above.

[0019] In a possible implementation, the current generated by the triboelectric generation system is in the range of microamperes to nanoamperes.

[0020] In a second aspect, the present application provides a Coulomb damping monitoring device based on the friction voltaic effect, comprising:

[0021] The triboelectric module is used to generate current through friction between the metal elastic support structure and the semiconductor during the operation of the bearing. The magnitude of the current varies with Coulomb damping, and the characteristics of the semiconductor will significantly affect the magnitude of the current.

[0022] A signal conditioning module, configured to protect the current through a signal conditioning system and reduce interference with the current caused by semiconductors and fixed structures;

[0023] A signal acquisition module, configured to collect and record the current signal through a signal acquisition system;

[0024] The data processing module is used to analyze the current signal through the data processing system and determine the operating status of the bearing.

[0025] The technical solution provided by this application can achieve at least the following beneficial effects:

[0026] The present application provides a Coulomb damping monitoring method and device based on the friction volt effect. Through a low-power, high-sensitivity, and strong anti-interference Coulomb damping monitoring method, no external excitation source is required, and in-situ, continuous, and real-time status monitoring can be achieved. The current signal generated by the friction interface between metal and semiconductor during relative motion is used to reflect the friction characteristics and working condition changes of bearings and other components during operation in real time. The structural design is reasonable, the structure is simple, and it has good integration and versatility. It generates current signals based on the friction volt effect for status monitoring, has a natural energy self-driving characteristic, does not require additional external power supply, effectively reduces the overall power consumption of the system, has multi-parameter fusion perception capability, and can provide key support for intelligent operation and maintenance such as Coulomb damping status assessment, fault warning, and life prediction. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, a brief introduction will be given below to the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative labor.

[0028] Figure 1 1 is a flow chart of a Coulomb damping monitoring method based on the frictional volt effect, shown in an exemplary embodiment of the present application;

[0029] Figure 2 1 is a schematic diagram of the overall structure of a radial bearing according to an exemplary embodiment of the present application;

[0030] Figure 3 It is a schematic diagram of a partial structure of an exemplary embodiment of the present application;

[0031] Figure 4 This is a schematic diagram of a workflow illustrating an exemplary embodiment of the present application;

[0032] Figure 5 Schematic diagram of the structure of a Coulomb damping monitoring device based on the friction volt effect, shown in an exemplary embodiment of the present application.

[0033] Reference numerals:

[0034] 1. Top fixed structure; 2. Insulator; 3. Metal elastic support structure; 4. Semiconductor; 5. Electrode;

[0035] 6. Bottom fixing structure; 7. Voltage / current indicating instrument; 8. Data processing system; 9. Triboelectric module; 10. Signal conditioning module; 11. Signal acquisition module; 12. Data processing module. DETAILED DESCRIPTION

[0036] In order to make the purpose, implementation methods and advantages of the present application clearer, the exemplary implementation methods of the present application will be clearly and completely described below in conjunction with the drawings in the exemplary embodiments of the present application. Obviously, the described exemplary embodiments are only part of the embodiments of the present application, not all of the embodiments. It should be understood that the specific embodiments described here are only used to explain the present application and are not used to limit the present application.

[0037] It should be noted that the brief descriptions of terms in this application are only for the purpose of facilitating the understanding of the embodiments described below, and are not intended to limit the embodiments of this application. Unless otherwise specified, these terms should be understood according to their ordinary and usual meanings.

[0038] In the specification and claims of this application and the accompanying drawings, the terms "first," "second," "third," etc. are used to distinguish similar or similar objects or entities, and are not necessarily intended to limit a particular order or sequence, unless otherwise noted. It should be understood that the terms used in this manner are interchangeable under appropriate circumstances.

[0039] The terms "comprise," "include," and "have," and any variations thereof, are intended to cover but not exclude inclusion; for example, a product or device comprising a list of components is not necessarily limited to all the components expressly listed but may include other components not expressly listed or inherent to such product or device.

[0040] Before explaining the Coulomb damping monitoring method based on the friction voltaic effect provided in the embodiment of the present application, the application scenario and implementation environment of the embodiment of the present application are first introduced.

[0041] At present, Coulomb damping monitoring mainly relies on traditional methods such as vibration, temperature and acoustics. These methods have certain limitations in practical applications. Although vibration monitoring can provide certain fault diagnosis capabilities, it is easily interfered by environmental noise and requires complex signal processing to accurately distinguish between faults and normal operation. Temperature monitoring can only indirectly reflect the Coulomb damping state and it is difficult to accurately judge the type and degree of faults. Although acoustic monitoring is more sensitive to minor faults, it is also easily affected by environmental noise and requires complex algorithm support.

[0042] Traditional methods are particularly effective in complex working environments such as high noise and high temperature, and generally have problems such as high cost, poor real-time performance, and difficult maintenance. In addition, these methods usually rely on external power supply, resulting in high system power consumption and are not suitable for long-term, low-energy wireless monitoring applications.

[0043] Therefore, there is an urgent need for a new type of monitoring technology that can achieve low power consumption, high sensitivity, strong anti-interference ability, adapt to complex working environments and provide accurate Coulomb damping state monitoring.

[0044] Based on this, the present application provides a Coulomb damping monitoring method and device based on the friction volt effect, and provides a low-power, high-sensitivity, and strong anti-interference Coulomb damping monitoring method based on the friction volt effect. It does not require an external excitation source and can achieve in-situ, continuous, and real-time status monitoring. It uses the current signal generated by the friction interface between metal and semiconductor during relative motion to reflect the friction characteristics and working condition changes of bearings and other components during operation in real time. The present invention has a reasonable structural design, simple construction, good integration and versatility, and generates current signals based on the friction volt effect for status monitoring. It has a natural energy self-driving characteristic and does not require additional external power supply, effectively reducing the overall power consumption of the system. It has multi-parameter fusion perception capabilities and can provide key support for intelligent operation and maintenance such as Coulomb damping status assessment, fault warning, and life prediction.

[0045] Next, the technical solution of the present application and how the technical solution of the present application solves the above-mentioned technical problems will be described in detail through embodiments and in conjunction with the accompanying drawings. The various embodiments can be combined with each other, and the same or similar concepts or processes may not be repeated in some embodiments. Obviously, the described embodiments are only part of the embodiments of the present application, not all of them.

[0046] Figure 1 1 is a flow chart of a Coulomb damping monitoring method based on the friction voltaic effect, shown in an exemplary embodiment of the present application.

[0047] In an exemplary embodiment, Figure 1 As shown, a Coulomb damping monitoring method based on the friction volt effect is provided. In this embodiment, the method may include the following steps:

[0048] Step 100: During the operation of the bearing, current is generated by friction between the metal elastic support structure and the semiconductor. The magnitude of the current varies with Coulomb damping, and the characteristics of the semiconductor will significantly affect the magnitude of the current.

[0049] Step 200: Protect the current through a signal conditioning system to reduce interference with the current caused by semiconductors and fixed structures.

[0050] Step 300: Collect and record the current signal through a signal acquisition system.

[0051] Step 400: Analyze the current signal through the data processing system to determine the operating status of the bearing.

[0052] Figure 2 FIG. 1 is a schematic diagram of the overall structure of a radial bearing according to an exemplary embodiment of the present application. Figure 3 is a partial structural diagram showing an exemplary embodiment of the present application. Figure 4 It is a schematic diagram of a workflow illustrating an exemplary embodiment of the present application.

[0053] In one possible implementation, Figure 2 and Figure 3 As shown, the specific implementation process of the monitoring method includes a triboelectric generation system, a signal conditioning system, a signal acquisition system, and a data processing system.

[0054] The triboelectric generation system includes a metal elastic support structure 3 and a semiconductor 4.

[0055] The signal conditioning system includes an insulator 2 and an electrode 5; the electrode 5 and the metal elastic support structure 3 are located on the same side of the semiconductor 4, and the insulators on both sides are in contact with the top fixed structure 1 and the bottom fixed structure 6 respectively.

[0056] The signal acquisition system consists of voltage / current indicating instruments with an accuracy of six and a half digits or above.

[0057] like Figure 4 As shown, during the operation of components such as bearings, surface friction between the metal elastic support structure 3 and the semiconductor 4 generates charge. The amount of charge varies depending on the friction. Connecting the two via electrodes 5 and a wire generates a current, which reflects the operating conditions of the bearing and other components. Electrodes 5 and insulators 2 are used to reduce charge loss, prevent the top and bottom fixing structures 1 and 6 from affecting the charge, and reduce impedance, thereby increasing the current value and facilitating measurement. The current signal is collected and recorded by a voltage / current indicator 7 with an accuracy of 6.5 digits or greater. The resulting data is analyzed by a data processing system 8 to determine the operating status of the bearing and other components.

[0058] Furthermore: the selected semiconductor 4 has a large difference in work function from the metal elastic support structure 3, has fast carrier mobility, and has high mechanical strength or a self-healing interface.

[0059] Furthermore: all interfaces between the semiconductor 4 and the metal are treated as ohmic contacts to ensure the linear relationship between current and voltage and the smooth passage of electrons. The semiconductor 4 needs to be connected to the signal acquisition system through the electrode 5 to avoid the current size being affected. After the electrode 5 is fixed to the semiconductor 4, the impedance is very small. The electrode 5 is first pressed by mechanical external force and then kept warm at 230°C for 3 minutes to be fixed on the semiconductor 4.

[0060] Furthermore, insulators 2 are added between the top fixing structure 1 and the metal elastic support structure 3, and between the semiconductor 4 and the bottom fixing structure 6, respectively, to prevent the top fixing structure 1 and the bottom fixing structure 6 from affecting the current.

[0061] Furthermore, the magnitude of the current generated by the triboelectric generation system is very small, requiring a voltage / current indicating instrument 7 with an accuracy of six and a half digits or above.

[0062] It should be understood that, although the various steps in the flowcharts involved in the above-described embodiments are displayed in sequence according to the instructions, these steps are not necessarily executed in the order indicated. Unless otherwise specified herein, there is no strict order restriction on the execution of these steps, and these steps can be executed in other orders. Moreover, at least a portion of the steps in the flowcharts involved in the above-described embodiments may include multiple steps or multiple stages, and these steps or stages are not necessarily executed at the same time, but can be executed at different times. The execution order of these steps or stages is not necessarily to be carried out in sequence, but can be executed in turn or alternately with other steps or at least a portion of steps or stages in other steps.

[0063] Corresponding to the aforementioned embodiment of the Coulomb damping monitoring method based on the friction volt effect, and adopting the same technical concept, the present application also provides an embodiment of the Coulomb damping monitoring device based on the friction volt effect.

[0064] Figure 5 Schematic diagram of the structure of a Coulomb damping monitoring device based on the friction volt effect, shown in an exemplary embodiment of the present application.

[0065] In an exemplary embodiment, Figure 5 As shown, the Coulomb damping monitoring device based on the friction voltaic effect includes:

[0066] The triboelectric module 9 is used to generate current through friction between the metal elastic support structure and the semiconductor during the operation of the bearing. The magnitude of the current varies with the Coulomb damping. The characteristics of the semiconductor will significantly affect the magnitude of the current.

[0067] A signal conditioning module 10 is used to protect the current through a signal conditioning system to reduce interference with the current caused by semiconductors and fixed structures;

[0068] A signal acquisition module 11 is used to collect and record the current signal through a signal acquisition system;

[0069] The data processing module 12 is used to analyze the current signal through the data processing system to determine the operating status of the bearing.

[0070] Working principle: According to the friction volt effect, when friction occurs between the metal and the semiconductor surface, a charge generation phenomenon similar to the volt effect will occur due to the breaking and generation of chemical bonds at the friction interface. Therefore, during the operation of components such as bearings, when friction occurs between the metal elastic support structure 3 and the semiconductor 4 surface, charge will be generated at the interface, and the amount of charge will change accordingly according to different friction conditions. The top fixed structure and the bottom fixed structure are both made of metal, which will affect the flow of charge, and the semiconductor cannot be directly connected to the wire. Therefore, an insulator 2 and an electrode 5 need to be added to reduce charge loss, reduce impedance, and conduct current, thereby increasing the current value and making it easier to measure. Since the amount of charge generated by the friction volt effect is small, a current / voltage indicating instrument 7 with an accuracy of six and a half digits or above is required to measure the current generated during the friction between the metal elastic support structure 3 and the semiconductor 4 surface.

[0071] It can be seen that compared with the prior art, some embodiments of the present application have the following beneficial effects:

[0072] Some embodiments of this application do not require an external excitation source and can achieve in-situ, continuous, and real-time status monitoring. This invention utilizes the frictional voltaic effect to sense Coulomb damping, using the current signal generated by the friction interface between metal and semiconductor during relative motion to reflect the friction characteristics and operating conditions of components such as bearings in real time during operation.

[0073] Some embodiments of the present application have reasonable structural design and simple construction, good integration and versatility, and can be easily used in conjunction with existing bearings and other components without the need for major changes to the original mechanical structure, which is conducive to reducing system modification costs.

[0074] Some embodiments of the present application use the frictional voltaic effect to generate current signals for status monitoring. They have natural energy self-driving characteristics and do not require additional external power supply, effectively reducing the overall power consumption of the system. They are particularly suitable for energy-sensitive micro-devices or remote unattended monitoring scenarios, achieving low-power, high-reliability online monitoring.

[0075] The current signals collected by some embodiments of the present application contain information on multiple operating parameters such as the load, speed, and lubrication status of bearings and other components, and have multi-parameter fusion perception capabilities, which can provide key support for intelligent operation and maintenance such as Coulomb damping state assessment, fault warning, and life prediction.

[0076] The specific definitions of the friction-voltaic Coulomb damping monitoring device can be found in the definitions of the friction-voltaic Coulomb damping monitoring method described above and will not be further elaborated here. Each module in the friction-voltaic Coulomb damping monitoring device described above can be implemented in whole or in part through software, hardware, or a combination thereof. Each of these modules can be embedded in or independent of a processor in a computer device in hardware form, or stored in a computer device memory in software form, allowing the processor to call and execute the corresponding operations of each module.

[0077] The technical features of the above embodiments can be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0078] The embodiments described above merely represent several implementation methods of the present application. While the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the present invention. It should be noted that a person skilled in the art could make various modifications and improvements without departing from the spirit of the present application, all of which fall within the scope of protection of the present application. Therefore, the scope of protection of the present patent application shall be determined by the appended claims.

Claims

1. A Coulomb damping monitoring method based on the friction volt effect, characterized in that: include: During the operation of the bearing, the friction between the metal elastic support structure and the semiconductor generates current, the magnitude of which varies with Coulomb damping. The characteristics of the semiconductor significantly affect the magnitude of the current. Protecting the current through a signal conditioning system to reduce interference with the current caused by semiconductors and fixed structures; Collecting and recording the current signal through a signal acquisition system; The current signal is analyzed by the data processing system to determine the operating status of the bearing.

2. The Coulomb damping monitoring method based on the friction volt effect according to claim 1, characterized in that: The work function of the semiconductor is significantly different from that of the metal elastic support structure, and has fast carrier mobility, high mechanical strength or a self-healing interface.

3. The Coulomb damping monitoring method based on the friction volt effect according to claim 1, characterized in that: The contact interface between the semiconductor and the metal is an ohmic contact, which ensures a linear relationship between current and voltage and smooth passage of electrons.

4. The Coulomb damping monitoring method based on the friction volt effect according to claim 3, characterized in that: The semiconductor is connected to a signal acquisition system via electrodes, and the impedance of the electrodes is extremely small after being fixed to the semiconductor.

5. The Coulomb damping monitoring method based on the friction volt effect according to claim 1, characterized in that: The electrodes were fixed on the semiconductor by mechanical external pressing and kept at 230° C. for 3 minutes.

6. The Coulomb damping monitoring method based on the friction volt effect according to claim 5, characterized in that: The electrode and the metal elastic support structure are located on the same side of the semiconductor, so that electrons flow on the surface and avoid longitudinally passing through the semiconductor material.

7. The Coulomb damping monitoring method based on the friction volt effect according to claim 1, characterized in that: The signal conditioning system is provided with insulators between the top fixing structure and the metal elastic supporting structure, and between the semiconductor and the bottom fixing structure, so as to isolate the influence of external structures on the current.

8. The Coulomb damping monitoring method based on the friction volt effect according to claim 1, characterized in that: The signal acquisition system uses a voltage / current indicating instrument with an accuracy of six and a half digits or above.

9. The Coulomb damping monitoring method based on the friction volt effect according to claim 1, characterized in that: The current generated by the triboelectric generation system is in the order of microamperes to nanoamperes.

10. A Coulomb damping monitoring device based on the friction volt effect, characterized in that: include: The triboelectric module is used to generate current through friction between the metal elastic support structure and the semiconductor during the operation of the bearing. The magnitude of the current varies with Coulomb damping, and the characteristics of the semiconductor will significantly affect the magnitude of the current. A signal conditioning module, configured to protect the current through a signal conditioning system and reduce interference with the current caused by semiconductors and fixed structures; A signal acquisition module, configured to collect and record the current signal through a signal acquisition system; The data processing module is used to analyze the current signal through the data processing system and determine the operating status of the bearing.