Manufacturing method of photomask, photomask and forming method of semiconductor bonding structure

Abstract

The invention provides a photomask manufacturing method, a photomask and a semiconductor bonding structure forming method, and relates to the technical field of semiconductors. The manufacturing method of the photomask comprises the following steps: providing a substrate; forming a shading layer on the substrate; the shading layer is etched to form a first light-transmitting area, and the first light-transmitting area corresponds to the contact hole to be manufactured; forming a second light-transmitting area, wherein an area jointly formed by the second light-transmitting area and the first light-transmitting area corresponds to the bonding pad accommodating hole to be manufactured; wherein the second light-transmitting area is arranged on the periphery of the first light-transmitting area in a surrounding mode, the second light-transmitting area is adjacent to the first light-transmitting area, and the light transmittance of the second light-transmitting area is smaller than that of the first light-transmitting area. According to the photomask formed by the manufacturing method provided by the invention, the bonding pad accommodating hole and the contact hole can be etched and formed at one time, so that the manufacturing procedures are reduced, the production efficiency is improved, the overlay error caused by multiple times of etching is reduced, and the reliability and the consistency of the device are further improved.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor technology, and in particular to a method for manufacturing a photomask and a method for forming a photomask and a semiconductor bonding structure. Background Art

[0002] In the fields of semiconductor manufacturing and advanced packaging, three-dimensional integrated circuit (3DIC) technology increases circuit integration by vertically stacking chips or wafers. Wafer-level integration is a key technology approach. Wafer-level integration methods include wafer-to-wafer bonding, which vertically stacks and bonds multiple wafers to form a high-density interconnect structure. This structure is one of the key technologies to break through the limitations of Moore's Law, achieving the coordinated optimization of semiconductor device performance, power consumption, and area through 3D integration.

[0003] Currently, hybrid bonding is used in wafer-to-wafer bonding. Within a single wafer, contact holes and bond pads connected to the contact holes need to be fabricated. The bond pads are used to align and bond the two wafers together to achieve wafer stacking. Because the contact holes and bond pad receiving holes within the wafer are typically fabricated using different masks and photolithography processes, the manufacturing process is complex, and the overlay accuracy of the contact holes and bond pads is low, impacting device reliability.

[0004] It should be noted that the information disclosed in the above background technology section is only used to enhance the understanding of the background of the present disclosure, and therefore may include information that does not constitute prior art known to ordinary technicians in the field. Summary of the Invention

[0005] In view of this, a method for manufacturing a mask and a method for forming a mask and a semiconductor bonding structure are provided. The mask formed by the manufacturing method can be used to simultaneously form contact holes and bonding pad receiving holes through a single photolithography process, thereby simplifying the manufacturing process and reducing the adverse effects of overlay errors on the device, thereby improving the reliability of the device.

[0006] Other features and advantages of the present disclosure will become apparent from the following detailed description, or may be learned in part by practice of the present disclosure.

[0007] According to one aspect of the present disclosure, a method for manufacturing a photomask is provided, the method comprising:

[0008] providing a substrate;

[0009] forming a light shielding layer on the substrate;

[0010] Etching the light shielding layer to form a first light-transmitting area, wherein the first light-transmitting area corresponds to the contact hole to be formed;

[0011] forming a second light-transmitting area, wherein the area formed by the second light-transmitting area and the first light-transmitting area corresponds to the bonding pad receiving hole to be fabricated;

[0012] The second light-transmitting area is arranged around the periphery of the first light-transmitting area, and the second light-transmitting area is adjacent to the first light-transmitting area, and the transmittance of the second light-transmitting area is lower than the transmittance of the first light-transmitting area.

[0013] In an exemplary embodiment of the present disclosure, forming the second light-transmitting area includes:

[0014] The remaining light-shielding layer is etched to form a plurality of light-shielding rings and a plurality of light-transmitting rings on the periphery of the first light-transmitting area, wherein the light-shielding rings and the light-transmitting rings are alternately arranged in a direction from the center to the edge of the first light-transmitting area.

[0015] In an exemplary embodiment of the present disclosure, the width of each of the light shielding rings is equal;

[0016] and / or the width of each of the light-transmitting rings is equal;

[0017] And / or the width of the light-shielding ring is equal to the width of the light-transmitting ring.

[0018] In an exemplary embodiment of the present disclosure, forming the second light-transmitting area includes:

[0019] The remaining light-shielding layer is etched to form a plurality of sub-light-transmitting areas and a plurality of sub-light-shielding areas on the periphery of the first light-transmitting area, and the sub-light-transmitting areas and the sub-light-shielding areas are alternately arranged in sequence in the direction surrounding the periphery of the first light-transmitting area, and the plurality of sub-light-transmitting areas and the plurality of sub-light-shielding areas together constitute an annular structure, and the annular structure is adjacent to the first light-transmitting area.

[0020] In an exemplary embodiment of the present disclosure, the sub-light-shielding area is in the shape of a circular sector, the sub-light-shielding area is concentric with the first light-transmitting area, and the central angles of each sub-light-shielding area are equal;

[0021] and / or the sub-light-transmitting areas are in the shape of circular sectors, the sub-light-transmitting areas are concentric with the first light-transmitting area, and the central angles of the sub-light-transmitting areas are equal;

[0022] And / or the central angles of the sub-light-shielding area and the sub-light-transmitting area are equal.

[0023] According to another aspect of the present disclosure, a photomask is provided, which is manufactured using any of the above methods.

[0024] According to another aspect of the present disclosure, a method for forming a semiconductor bonding structure is provided, the method comprising:

[0025] providing a substrate;

[0026] forming a stacked structure on the substrate, the stacked structure comprising a first dielectric layer, an etch stop layer, a second dielectric layer, and a barrier layer sequentially formed along a first direction and in a direction away from the surface of the substrate, wherein the first direction is a direction perpendicular to the surface of the substrate;

[0027] forming an initial photoresist layer on the surface of the stacked structure;

[0028] The initial photoresist layer is patterned using a photomask to form a first patterned photoresist layer; wherein the photomask includes a first light-transmitting area and a second light-transmitting area, the second light-transmitting area is arranged around the periphery of the first light-transmitting area, the second light-transmitting area is adjacent to the first light-transmitting area, the transmittance of the second light-transmitting area is less than the transmittance of the first light-transmitting area, the first light-transmitting area corresponds to a contact hole to be fabricated, and the area formed by the first light-transmitting area and the second light-transmitting area corresponds to a bonding pad receiving hole to be fabricated; or the photomask is a photomask fabricated by any of the above methods;

[0029] The stacked structure is etched using the first patterned photoresist layer to form the bonding pad receiving hole and the contact hole in the stacked structure, wherein the bonding pad receiving hole and the contact hole are connected and coaxial in the first direction, and the orthographic projection of the bonding pad receiving hole on the surface of the substrate covers the orthographic projection of the contact hole on the surface of the substrate.

[0030] In an exemplary embodiment of the present disclosure, the forming of the first patterned photoresist layer includes:

[0031] exposing and developing the initial photoresist layer using the photomask to form a first through hole and a second through hole in the initial photoresist layer;

[0032] The first through hole and the second through hole are connected in the first direction and are coaxial, and the orthographic projection of the first through hole on the surface of the substrate covers the orthographic projection of the second through hole on the surface of the substrate.

[0033] In an exemplary embodiment of the present disclosure, etching the stacked structure using the first patterned photoresist layer includes:

[0034] Using the first patterned photoresist layer as a mask, the barrier layer is etched until the surface of the second dielectric layer is exposed, so as to form a first middle hole in the barrier layer and obtain a second patterned photoresist layer; wherein the opening of the first middle hole is the same size as the opening of the second through hole, and the stacked structure formed with the first middle hole is defined as a first middle stacked structure.

[0035] In an exemplary embodiment of the present disclosure, etching the stacked structure using the first patterned photoresist layer further includes:

[0036] After forming the first middle hole in the barrier layer, etching the first middle stacked structure using the second patterned photoresist layer and the barrier layer having the first middle hole as masks to enlarge the size of the opening of the first middle hole in the barrier layer to form a second middle hole in the barrier layer, and simultaneously etching the second dielectric layer and the etch stop layer along the first direction until the first dielectric layer is exposed to form a third middle hole in the second dielectric layer and the etch stop layer;

[0037] In which, the second middle hole is connected and coaxial with the third middle hole in the first direction, the orthographic projection of the second middle hole on the surface of the substrate covers the orthographic projection of the third middle hole on the surface of the substrate, the opening of the second middle hole is the same size as the opening of the first through hole, and the opening of the third middle hole is the same size as the opening of the second through hole, and the stacked structure formed with the second middle hole and the third middle hole is defined as a second middle stacked structure.

[0038] In an exemplary embodiment of the present disclosure, etching the stacked structure using the first patterned photoresist layer further includes:

[0039] After forming the third middle hole in the second dielectric layer and the etch barrier layer, etching the second middle stacked structure using the barrier layer having the second middle hole and the etch stop layer having the third middle hole as masks to enlarge the size of the opening of the third middle hole in the second dielectric layer to form the bonding pad receiving hole in the second dielectric layer, and simultaneously etching the first dielectric layer along the first direction to a predetermined position to form the contact hole in the etch stop layer and the first dielectric layer;

[0040] The bonding pad receiving hole passes through the second dielectric layer, the contact hole passes through the etching stop layer and extends into the first dielectric layer, and the connecting surface between the bonding pad receiving hole and the contact hole overlaps with the surface of the etching stop layer away from the substrate.

[0041] In an exemplary embodiment of the present disclosure, after forming the bonding pad receiving hole and the contact hole in the stacked structure, the method further includes:

[0042] Synchronously depositing a conductive material layer in the bonding pad receiving hole and the contact hole to simultaneously form a bonding pad and a contact plug;

[0043] Wherein, the bonding pad is formed in the bonding pad accommodating hole, and the contact plug is formed in the contact hole.

[0044] In an exemplary embodiment of the present disclosure, the second light-transmitting area includes a plurality of light-shielding rings and a plurality of light-transmitting rings, and in a direction from the center to the edge of the first light-transmitting area, the light-shielding rings and the light-transmitting rings are alternately arranged in sequence.

[0045] In an exemplary embodiment of the present disclosure, the second light-transmitting area includes a plurality of sub-light-transmitting areas and a plurality of sub-light-shielding areas, and each of the sub-light-transmitting areas and each of the sub-light-shielding areas are alternately arranged in sequence in a direction surrounding the circumference of the first light-transmitting area, and the plurality of sub-light-transmitting areas and the plurality of sub-light-shielding areas together constitute an annular structure, and the annular structure is adjacent to the first light-transmitting area.

[0046] In an exemplary embodiment of the present disclosure, an etching selectivity ratio of the barrier layer to the second dielectric layer is at least 1:10; and / or an etching selectivity ratio of the etch stop layer to the first dielectric layer is at least 1:10.

[0047] The present disclosure provides a method for producing a photomask, which forms a first light-transmitting area and a second light-transmitting area on a substrate, wherein the second light-transmitting area is arranged around the periphery of the first light-transmitting area and is adjacent to the first light-transmitting area, the transmittance of the second light-transmitting area is less than the transmittance of the first light-transmitting area, the first light-transmitting area corresponds to the contact hole to be produced, and the area formed by the second light-transmitting area and the first light-transmitting area corresponds to the bonding pad receiving hole to be produced. The photomask formed by this production method can simultaneously form contact holes and bonding pad receiving holes in a wafer through a single photolithography process, thereby simplifying the production process and improving production efficiency. In addition, since the contact holes and bonding pad receiving holes are formed in one step, the adverse effects of overlay errors on the reliability of the device are reduced, thereby improving the alignment accuracy of subsequent bonding pads and contact plugs, and improving the reliability and consistency of the device.

[0048] It is to be understood that the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0049] The accompanying drawings are incorporated into and constitute a part of the specification, illustrate embodiments consistent with the present disclosure, and together with the specification, are used to explain the principles of the present disclosure. Obviously, the drawings described below are only some embodiments of the present disclosure, and those skilled in the art can derive other drawings based on these drawings without inventive effort.

[0050] Figure 1The present invention is a flowchart of a method for manufacturing a photomask according to an exemplary embodiment of the present invention.

[0051] Figure 2 Schematic diagram of the structure of a substrate in an exemplary embodiment of the present disclosure.

[0052] Figure 3 Schematic diagram of the structure of a substrate with a light-shielding layer in an exemplary embodiment of the present disclosure.

[0053] Figure 4 Schematic diagram of the structure of a first light-transmitting area in an exemplary embodiment of the present disclosure.

[0054] Figure 5 Schematic diagram of the structure of a photomask in an exemplary embodiment of the present disclosure.

[0055] Figure 6 Schematic diagram of the structure of a second light-transmitting area in an exemplary embodiment of the present disclosure.

[0056] Figure 7 Schematic diagram of the structure of another second light-transmitting area in an exemplary embodiment of the present disclosure.

[0057] Figure 8 Schematic diagram of the structure of another second light-transmitting area in an exemplary embodiment of the present disclosure.

[0058] Figure 9 The present invention is a flowchart of a method for forming a semiconductor bonding structure in an exemplary embodiment of the present disclosure.

[0059] Figure 10 FIG. 1 is a schematic structural diagram of a stacked structure formed with an initial photoresist layer in an exemplary embodiment of the present disclosure.

[0060] Figure 11 The figure is a schematic diagram of exposing and developing an initial photoresist layer in an exemplary embodiment of the present disclosure.

[0061] Figure 12 FIG. 4 is a schematic diagram of forming a first patterned photoresist layer in an exemplary embodiment of the present disclosure.

[0062] Figure 13 FIG. 4 is a schematic diagram of forming a first intermediate stacked structure in an exemplary embodiment of the present disclosure.

[0063] Figure 14 FIG. 1 is a schematic diagram of forming a second intermediate stacked structure in an exemplary embodiment of the present disclosure.

[0064] Figure 15 The figure is a schematic diagram of forming a contact hole and a bonding pad receiving hole in an exemplary embodiment of the present disclosure.

[0065] Figure 16 FIG. 1 is a schematic diagram of forming a contact plug and a bonding pad in an exemplary embodiment of the present disclosure.

[0066] The description of the accompanying drawings is as follows:

[0067] 100, substrate; 101, light shielding layer; 110, first light-transmitting region; 120, second light-transmitting region; 121, light shielding ring; 122, light-transmitting ring; 123, sub-light-transmitting region; 124, sub-light shielding region; 125, doped region; X, first direction; 200, substrate; 300, stacked structure; 301, first dielectric layer; 310, etch stop layer; 302, second dielectric layer; 320, barrier layer; 400, initial Initial photoresist layer; 501, first through hole; 502, second through hole; 410, first patterned photoresist layer; 601, first middle hole; 411, first middle stack structure; 420, second patterned photoresist layer; 602, second middle hole; 603, third middle hole; 421, second middle stack structure; 701, bonding pad receiving hole; 702, contact hole; 710, bonding pad; 720, contact plug. DETAILED DESCRIPTION

[0068] Example embodiments will now be described more fully with reference to the accompanying drawings. However, the example embodiments can be implemented in many forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete and will fully convey the concepts of the example embodiments to those skilled in the art. Like reference numerals in the figures represent identical or similar structures, and thus their detailed descriptions will be omitted. Furthermore, the figures are merely schematic illustrations of the present disclosure and are not necessarily drawn to scale.

[0069] Although relative terms such as "upper" and "lower" are used in this specification to describe the relationship of one illustrated component to another, these terms are used herein for convenience only, such as in accordance with the orientation of the illustrations in the accompanying drawings. It will be understood that if the illustrated device were flipped upside down, the component described as "upper" would become the component "lower." When a structure is referred to as "on" another structure, this may mean that the structure is integrally formed with the other structure, that the structure is "directly" disposed on the other structure, or that the structure is "indirectly" disposed on the other structure via the other structure.

[0070] The terms "a", "an", "the", "said" and "at least one" are used to indicate the presence of one or more elements / components / etc.; the terms "including" and "having" are used to express open-ended inclusion and mean that additional elements / components / etc. may be present in addition to the listed elements / components / etc.; the terms "first", "second" and "third" etc. are used only as labels and are not intended to limit the quantity of their objects.

[0071] In related technologies, wafer-on-wafer (WoW) is a three-dimensional integration technology that forms a high-density interconnected structure by directly stacking and bonding multiple wafers vertically. This structure is one of the key technologies to break the limitations of Moore's Law and achieves coordinated optimization of the performance, power consumption and area of semiconductor devices through 3D integration.

[0072] The WoW structure is to align two or more wafers face to face or back to back, and realize electrical connection through hybrid bonding (HybridBonding) or microbumps. This structure can reduce the interconnection spacing between wafers and reduce the signal transmission distance, thereby reducing signal delay and device power consumption, and thus improving the performance of the device. In the hybrid bonding of multiple wafers, it is necessary to make contact plugs and bonding pads on the wafer, and the two adjacent wafers are bonded and connected through bonding pads, wherein the contact plugs are formed in the contact holes and the bonding pads are formed in the bonding pad receiving holes. At present, in the preparation process, in each wafer, the contact holes and bonding pad receiving holes usually need to be made separately by using two masks with different patterns and two different etching processes. The production process is cumbersome, the economic cost is high, and the production efficiency is low. In addition, the overlay error between the contact holes and bonding pad receiving holes formed by the above method is large, which is not conducive to improving the reliability of the device.

[0073] Based on this, the present disclosure provides a method for manufacturing a mask, such as Figure 1 As shown, the manufacturing method includes: steps S1 to S4.

[0074] Wherein, step S1: providing a substrate;

[0075] Step S2: forming a light shielding layer on the substrate;

[0076] Step S3: etching the light shielding layer to form a first light-transmitting area, where the first light-transmitting area corresponds to the contact hole to be formed;

[0077] Step S4: forming a second light-transmitting area, wherein the area formed by the second light-transmitting area and the first light-transmitting area corresponds to the bonding pad receiving hole to be made; wherein the second light-transmitting area is arranged around the periphery of the first light-transmitting area, and the second light-transmitting area is adjacent to the first light-transmitting area, and the transmittance of the second light-transmitting area is less than the transmittance of the first light-transmitting area.

[0078] The method for manufacturing a photomask provided by the present disclosure forms a whole light-shielding layer on a substrate, then forms a first light-transmitting area corresponding to the contact hole on the light-shielding layer, and forms an adjacent second light-transmitting area in the peripheral direction of the first light-transmitting area. The area formed by the second light-transmitting area and the first light-transmitting area corresponds to the bonding pad accommodating hole to be manufactured. The photomask formed by this method can simultaneously form contact holes and bonding pad accommodating holes in a wafer through a single photolithography process, thereby simplifying the manufacturing process, improving manufacturing efficiency, and reducing production costs; in addition, the contact holes and bonding pad accommodating holes are formed through the photomask using a single photolithography process, which reduces the sidewall transfer error of the contact hole, reduces the adverse effects of the overlay error on the reliability of the device, improves the alignment accuracy of the subsequent bonding pad and contact plug, and improves the reliability and consistency of the device.

[0079] It should be noted that the transmittance in the present disclosure may refer to the ratio of the intensity of transmitted light to the intensity of incident light when light passes through a certain medium, that is, the greater the transmittance, the greater the intensity of light passing through the medium, and the smaller the transmittance, the smaller the intensity of light passing through the medium. Among them, the transmittance of the second light-transmitting area is less than the transmittance of the first light-transmitting area, which may mean that the intensity of light passing through the first light-transmitting area is greater than the intensity of light passing through the second light-transmitting area. In addition, in the present disclosure, the transmittance of the shading area (shading layer) may be less than or much less than the transmittance of the light-transmitting area, that is, the shading area is opaque or can only transmit a very small amount of light.

[0080] The following is a detailed description of the various steps of the method for manufacturing a photomask according to an embodiment of the present disclosure with reference to the accompanying drawings:

[0081] In the embodiments provided in the present disclosure, Figure 2 As shown, in step S1 , a substrate 100 is provided.

[0082] Substrate 100 can be made of quartz glass, fused silica, or soda-lime glass; it can also be made of a low thermal expansion material or a crystalline material. For example, the low thermal expansion material can be titanosilicate glass, and the crystalline material can be calcium fluoride (CaF2) or sapphire (Al2O3). The substrate 100 can be selected based on the actual design requirements of the mask structure and is not specifically limited in this disclosure.

[0083] The cross-sectional shape of the substrate 100 can be rectangular, square, circular, or triangular, among others. In the following embodiments of the present disclosure, the cross-sectional shape of the substrate 100 can be rectangular so that the substrate 100 can provide sufficient fabrication area for the subsequent fabrication of the photomask. Of course, when the cross-sectional shape of the substrate 100 is other shapes, adaptive modifications can be made to the embodiments of the present disclosure to fabricate the photomask, and all such modifications should be understood to be within the scope of protection of the present disclosure.

[0084] In the embodiments provided in the present disclosure, Figure 3 As shown, in step S2 , a light shielding layer 101 is formed on the substrate 100 .

[0085] The light shielding layer 101 can be made of a chromium-based material, for example, chromium (Cr), chromium oxide (CrO x ) or chromium nitride (CrN); it can also be made of molybdenum silicon material, for example, it can be molybdenum silicon oxynitride (MoSiON) or molybdenum disilicide (MoSi2); it can also be made of tantalum-based materials, for example, it can be tantalum boron nitride (TaBN) or tantalum boron oxide (TaBO); it can also be a high-k (high dielectric constant) material, for example, it can be titanium nitride (TiN) / hafnium oxide (HfO2) composite layer, silicon nitride (Si3N4) / chromium nitride (ZrN) composite layer, etc. Of course, the light shielding layer 101 can also be formed of one of the above materials, or a combination of the above materials. The specific material and thickness of the light shielding layer 101 can be selected and determined according to the type of substrate 100, and this disclosure does not make specific limitations.

[0086] The light shielding layer 101 can cover the surface of the substrate 100, or at least cover most of the surface of the substrate 100, to ensure the characteristic dimensions of the first light-transmitting area 110 and the second light-transmitting area 120 produced subsequently, and further ensure the characteristic dimensions of the contact hole and the bonding pad receiving hole.

[0087] In the embodiments provided in the present disclosure, Figure 4 As shown, in step S3 , the light shielding layer 101 is etched to form a first light-transmitting region 110 . The first light-transmitting region 110 corresponds to the contact hole to be fabricated.

[0088] The light shielding layer 101 can be etched by one or more methods such as dry etching (Dry Etching), atomic layer etching (ALE), and cryo-etching (Cryo-Etching). The specific etching method of the light shielding layer 101 can be selected according to the specific material of the light shielding layer 101, the type of substrate 100, etc., and this disclosure does not make any specific limitations.

[0089] The orthographic projection of the first light-transmitting area 110 on the substrate 100 can be a circle, a square, a rectangle or the like. The shape of the orthographic projection of the first light-transmitting area 110 on the substrate 100 needs to be determined according to the shape of the contact hole. In the embodiment provided in the present disclosure, the cross-sectional shape of the contact hole can be a circle, and the orthographic projection of the first light-transmitting area 110 on the substrate 100 is a circle.

[0090] In the embodiments provided in the present disclosure, Figure 5 As shown, in step S4 , a second light-transmitting area 120 is formed, and the area formed by the second light-transmitting area 120 and the first light-transmitting area 110 corresponds to the bonding pad receiving hole to be manufactured.

[0091] The second light-transmitting area 120 is arranged around the outer periphery of the first light-transmitting area 110, and the second light-transmitting area 120 is adjacent to the first light-transmitting area 110. The transmittance of the second light-transmitting area 120 is lower than the transmittance of the first light-transmitting area 110. The characteristic size of the area jointly formed by the second light-transmitting area 120 and the first light-transmitting area 110 is equal to the characteristic size of the bonding pad receiving hole.

[0092] In some embodiments, as Figure 6 As shown, combined Figure 5 The second light-transmitting region 120 is formed by etching the remaining light-shielding layer 101 to form a plurality of light-shielding rings 121 and a plurality of light-transmitting rings 122 on the periphery of the first light-transmitting region 110. The light-shielding rings 121 and the light-transmitting rings 122 are arranged alternately in a direction from the center of the first light-transmitting region 110 to the edge. The light-shielding rings 121 and the light-transmitting rings 122 are arranged alternately to form a circular slit region, which reduces the transmittance of the second light-transmitting region 120. Combined with the diffraction effect of light, the exposure amount of the second light-transmitting region 120 is in a semi-exposed state. Since the transmittance of the second light-transmitting region 120 is less than that of the first light-transmitting region 110, this mask can be used in the subsequent etching process to simultaneously form contact holes and bonding pad receiving holes in the wafer, thereby achieving the purpose of forming the contact holes and bonding pad receiving holes in one go.

[0093] The number and size of the light-shielding rings 121 and light-transmitting rings 122 within the second light-transmitting region 120 can be set according to specific process requirements and are not limited by this disclosure. In some specific embodiments, the first light-transmitting region 110 can be a circular light-transmitting hole with a diameter of 500 nm to 1000 nm, and the width of the second light-transmitting region 120 can be 40% to 80% of the diameter of the first light-transmitting region 110. For example, the width of the second light-transmitting region 120 can be 200 nm to 800 nm.

[0094] In some specific embodiments, the width of each light-shielding ring 121 is equal; and / or the width of each light-transmitting ring 122 is equal; and / or the width of the light-shielding ring 121 is equal to the width of the light-transmitting ring 122 .

[0095] Furthermore, in order to ensure the light diffraction effect of the circular slit area composed of multiple shading rings 121 and multiple transparent rings 122 in the second transparent area 120, the width of each shading ring 121 is equal, and the width of each transparent ring 122 is equal, and the width of the shading ring 121 is equal to the width of the transparent ring 122, that is, the shading rings 121 and the transparent rings 122 are arranged from small to large according to the outer ring diameter in the direction from the center to the edge of the first transparent area 110. The second transparent area 120 can not only ensure that the second transparent area 120 has sufficient transmittance to form a bonding pad accommodating hole, but also achieve the purpose of controlling the hole wall profile shape of the contact hole, thereby improving the subsequent formation quality of the contact plug.

[0096] In some embodiments, as Figure 7 As shown, combined Figure 5 , forming the second light-transmitting area 120, including: etching the remaining light-shielding layer 101 to form a plurality of sub-light-transmitting areas 123 and a plurality of sub-light-shielding areas 124 on the periphery of the first light-transmitting area 110, the sub-light-transmitting areas 123 and the sub-light-shielding areas 124 being alternately arranged in sequence in a direction surrounding the periphery of the first light-transmitting area 110, the plurality of sub-light-transmitting areas 123 and the plurality of sub-light-shielding areas 124 together forming an annular structure, and the annular structure is adjacent to the first light-transmitting area 110. Since the sub-light-transmitting areas 123 and the sub-light-shielding areas 124 are alternately arranged on the periphery of the first light-transmitting area 110, a circular slit area is formed on the periphery of the first light-transmitting area 110, which reduces the transmittance of the second light-transmitting area 120. Combined with the diffraction effect of light, the exposure amount of the second light-transmitting area 120 is in a semi-exposed state. Since the transmittance of the second light-transmitting area 120 is less than that of the first light-transmitting area 110, in the subsequent etching process, this mask can be used to simultaneously form contact holes and bonding pad accommodating holes in the wafer, so as to achieve the purpose of forming the contact holes and bonding pad accommodating holes in one go.

[0097] The number and size of the sub-light-transmitting regions 123 and the sub-light-shielding regions 124 within the second light-transmitting region 120 can be set according to specific process requirements and are not limited by the present disclosure. In some specific embodiments, multiple sub-light-transmitting regions 123 and multiple sub-light-shielding regions 124 together form an annular structure, which can be a circular slit region. The first light-transmitting region 110 can be a circular light-transmitting hole with a diameter of 500nm to 1000nm, and the width of the second light-transmitting region 120 can be 40% to 80% of the diameter of the first light-transmitting region 110. For example, the width of the second light-transmitting region 120 can be 200nm to 800nm.

[0098] In some specific embodiments, the sub-light-shielding area 124 is a circular sector, the sub-light-shielding area 124 is concentric with the first light-transmitting area 110, and the central angle of each sub-light-shielding area 124 is equal; and / or the sub-light-transmitting area 123 is a circular sector, the sub-light-transmitting area 123 is concentric with the first light-transmitting area 110, and the central angle of each sub-light-transmitting area 123 is equal; and / or the central angles of the sub-light-shielding area 124 and the sub-light-transmitting area 123 are equal.

[0099] Furthermore, in order to ensure the light diffraction effect of the annular slit area composed of multiple sub-light-shielding areas 124 and multiple sub-light-transmitting areas 123 in the second light-transmitting area 120, the central angle of each sub-light-shielding area 124 is equal, and the central angle of each sub-light-transmitting area 123 is equal, and the central angles of the sub-light-shielding areas 124 and the sub-light-transmitting areas 123 are equal, that is, the sub-light-shielding areas 124 and the sub-light-transmitting areas 123 are evenly distributed in the annular structure. The second light-transmitting area 120 can not only ensure that the second light-transmitting area 120 has sufficient transmittance to form a bonding pad accommodating hole, but also achieve the purpose of controlling the hole wall profile shape of the contact hole, thereby improving the quality of subsequent contact plug formation.

[0100] In some embodiments, as Figure 8 As shown, combined Figure 5 , forming the second light-transmitting region 120 , including: performing a doping process on at least a portion of the light-shielding layer 101 located on the periphery of the first light-transmitting region 110 to form the second light-transmitting region 120 .

[0101] After forming the first light-transmitting region 110, the light-shielding layer 101 surrounding the first light-transmitting region 110 is doped to form a doped region 125 in the peripheral direction of the first light-transmitting region 110. The doped region 125 serves as the second light-transmitting region 120. The second light-transmitting region 120 is adjacent to the first light-transmitting region 110, and the transmittance of the second light-transmitting region 120 is lower than the transmittance of the first light-transmitting region 110.

[0102] In some specific embodiments, the light shielding layer 101 may be a chromium film layer, and the doping treatment may be one or more of oxygen doping, sulfur doping, nitrogen doping, phosphorus doping, tantalum doping, and molybdenum doping. The formed doping region 125 (the second light-transmitting region 120) may be chromium oxide (CrO x ), chromium sulfide (CrS), chromium nitride (CrN), chromium phosphide (CrP), chromium tantalum (CrTa), chromium molybdenum (CrMo) or chromium oxynitride (CrON), so that the transmittance of the second light-transmitting area 120 is less than the transmittance of the first light-transmitting area 110.

[0103] It should be noted that, in the above embodiment, the light-shielding layer 101 is a chromium film layer as an example. When the light-shielding layer 101 is made of other materials, different elements can be used to dope the light-shielding layer 101 to form a second light-transmitting area 120. The light-shielding layers 101 made of other materials are no longer listed one by one here.

[0104] The number of areas jointly constituted by the first light-transmitting area 110 and the second light-transmitting area 120 provided in the embodiment of the present disclosure on the substrate 100 can be one or more. When the number of the above-mentioned areas is multiple, this mask can be used to simultaneously prepare multiple one-time formed contact holes and bonding pad accommodating holes in one wafer to realize batch production of bonding pads and contact plugs and improve production efficiency.

[0105] It should be noted that although the steps of the photomask manufacturing method of the present disclosure are described in a specific order in the accompanying drawings, this does not require or imply that the steps must be performed in this specific order, or that all steps must be performed to achieve the desired results. Additionally or alternatively, certain steps may be omitted, multiple steps may be combined into one step, and / or a single step may be broken down into multiple steps.

[0106] The embodiment of the present disclosure provides a photomask, which is manufactured using any of the above-mentioned manufacturing methods. Figure 5 As shown, the mask includes at least a first light-transmitting area 110 and a second light-transmitting area 120, the second light-transmitting area 120 is arranged on the periphery of the first light-transmitting area 110, and the second light-transmitting area 120 is adjacent to the first light-transmitting area 110, the transmittance of the second light-transmitting area 120 is less than the transmittance of the first light-transmitting area 110, the first light-transmitting area 110 corresponds to the contact hole to be made, and the area jointly formed by the second light-transmitting area 120 and the first light-transmitting area 110 corresponds to the bonding pad accommodating hole to be made. By etching the wafer with the mask, the contact hole and the bonding pad accommodating hole can be formed by a one-time etching process, which simplifies the process, reduces production costs, and improves economy; in addition, by etching the wafer with the mask, the sidewall profile of the contact hole can be controlled, the sidewall transfer error of the contact hole can be reduced, and the production quality of the contact hole can be improved, thereby improving the reliability of the device.

[0107] In some embodiments, as Figure 6 As shown, the second light-transmitting region 120 includes a plurality of light-shielding rings 121 and a plurality of light-transmitting rings 122 formed on the periphery of the first light-transmitting region 110. The light-shielding rings 121 and the light-transmitting rings 122 are alternately arranged in a direction from the center of the first light-transmitting region 110 toward the edge. The specific structure of the second light-transmitting region 120 has been described in the above embodiment and will not be repeated here.

[0108] In some embodiments, as Figure 7As shown, the second light-transmitting region 120 includes a plurality of sub-light-transmitting regions 123 and a plurality of sub-light-shielding regions 124 formed on the periphery of the first light-transmitting region 110. The sub-light-transmitting regions 123 and the sub-light-shielding regions 124 are alternately arranged in a direction surrounding the periphery of the first light-transmitting region 110. The plurality of sub-light-transmitting regions 123 and the plurality of sub-light-shielding regions 124 together form an annular structure, and the annular structure is adjacent to the first light-transmitting region 110. The specific structure of the second light-transmitting region 120 has been described in the above embodiment and will not be repeated here.

[0109] In some embodiments, as Figure 8 As shown, the second light-transmitting region 120 includes a doped region 125, so that the transmittance of the second light-transmitting region 120 is lower than the transmittance of the first light-transmitting region 110. The specific structure of the second light-transmitting region 120 has been described in the above embodiment and will not be repeated here.

[0110] The present disclosure provides a method for forming a semiconductor bonding structure. Figure 9 As shown, the forming method includes: steps S10 to S50.

[0111] Wherein, step S10: providing a substrate;

[0112] Step S20: forming a stacked structure on the substrate, the stacked structure comprising a first dielectric layer, an etch stop layer, a second dielectric layer, and a barrier layer sequentially formed along a first direction and away from the surface of the substrate, wherein the first direction is a direction perpendicular to the surface of the substrate;

[0113] Step S30: forming an initial photoresist layer on the surface of the stacked structure;

[0114] Step S40: patterning the initial photoresist layer using a photomask to form a first patterned photoresist layer;

[0115] Step S50: Etching the stacked structure using a first patterned photoresist layer to form a bonding pad receiving hole and a contact hole in the stacked structure, wherein the bonding pad receiving hole and the contact hole are connected and coaxial in a first direction, and the orthographic projection of the bonding pad receiving hole on the surface of the substrate covers the orthographic projection of the contact hole on the surface of the substrate.

[0116] In which, the mask includes a first light-transmitting area and a second light-transmitting area, the second light-transmitting area is arranged on the periphery of the first light-transmitting area, the second light-transmitting area is adjacent to the first light-transmitting area, the transmittance of the second light-transmitting area is less than the transmittance of the first light-transmitting area, the first light-transmitting area corresponds to the contact hole to be produced, and the area jointly formed by the first light-transmitting area and the second light-transmitting area corresponds to the bonding pad accommodating hole to be produced; or the mask is the mask in the above-mentioned embodiment.

[0117] The present disclosure provides a method for forming a semiconductor bonding structure, which uses a mask to pattern an initialization photoresist layer to form a first pattern photoresist layer, and uses the first pattern photoresist layer to etch the stacked structure to simultaneously form connected and coaxial bonding pad accommodating holes and contact holes in the stacked structure. This formation method can use the same mask to simultaneously form the bonding pad accommodating holes and contact holes through a single etching process, thereby simplifying the manufacturing process and improving manufacturing efficiency. In addition, by using the same mask to simultaneously form the bonding pad accommodating holes and contact holes, the overlay error caused by multiple photolithography processes can be reduced, thereby improving the alignment accuracy of the bonding pad accommodating holes and the contact holes, and further improving the reliability of the device. This method can also effectively control the sidewall profile shape of the contact hole, thereby improving the manufacturing quality of the contact hole.

[0118] The following describes in detail the steps of the method for forming a semiconductor bonding structure provided by the embodiment of the present disclosure with reference to the accompanying drawings:

[0119] In the embodiments provided in the present disclosure, Figure 10 As shown, in step S10 , a substrate 200 is provided.

[0120] The substrate 200 may be a semiconductor substrate 200, for example, a silicon (Si) substrate 200, a germanium (Ge) substrate 200, a silicon-germanium (GeSi) substrate 200, an SOI (Silicon On Insulator), or a GOI (Germanium On Insulator). In some embodiments, the semiconductor substrate 200 may also be a substrate 200 comprising other elemental semiconductors or compound semiconductors, for example, silicon carbide (SiC), indium phosphide (InP), or gallium arsenide (GaAs). The substrate 200 may be selected based on the actual design requirements of the semiconductor structure and is not specifically limited in this disclosure.

[0121] In the embodiments provided in the present disclosure, Figure 10 As shown, in step S20, a stacked structure 300 is formed on the substrate 200, and the stacked structure 300 includes a first dielectric layer 301, an etch stop layer 310, a second dielectric layer 302 and a barrier layer 320 formed in sequence along a first direction X and in a direction away from the surface of the substrate 200, where the first direction X is a direction perpendicular to the surface of the substrate 200.

[0122] The first dielectric layer 301 can be made of materials such as silicon oxide (SiO2) and silicon hydroxide (SiOH). The second dielectric layer 302 can be made of materials such as silicon oxide (SiO2) and silicon hydroxide (SiOH). For example, when the second dielectric layer 302 is made of silicon oxide, the surface of the second dielectric layer 302 between two wafers can form Si-O-Si chemical bonds to achieve mechanical connection between the wafers. Of course, when the second dielectric layer 302 is made of other materials, chemical bonds can also be formed on the surface of the second dielectric layer 302 between two adjacent wafers to achieve hybrid bonding between adjacent wafers.

[0123] The first dielectric layer 301 and the second dielectric layer 302 can be made of the same or different materials. However, in order to simplify the subsequent etching process of the first dielectric layer 301 and the second dielectric layer 302, the first dielectric layer 301 and the second dielectric layer 302 can be made of the same material. In the embodiment of the present disclosure, the first dielectric layer 301 and the second dielectric layer 302 are both made of silicon oxide. However, when both are made of other materials, the etching process can be adaptively adjusted.

[0124] The first dielectric layer 301 and the second dielectric layer 302 can be formed by one or more methods such as physical vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD), thermal oxidation (Thermal Oxidation), and sol-gel (Sol-Gel). The formation process of the first dielectric layer 301 and the second dielectric layer 302 can be determined according to the selection of their specific materials, and this disclosure does not make any specific limitations.

[0125] The etch stop layer 310 can be made of materials such as silicon nitride (Si3N4) and silicon carbonitride (SiCN); the barrier layer 320 can be made of materials such as silicon nitride (Si3N4) and silicon carbonitride (SiCN). The etch stop layer 310 and the barrier layer 320 can be made of the same or different materials. However, to simplify the subsequent etching process of the etch stop layer 310 and the barrier layer 320, the etch stop layer 310 and the barrier layer 320 can be made of the same material. In the embodiments of the present disclosure, the etch stop layer 310 and the barrier layer 320 are both made of silicon nitride. However, if both are made of other materials, the etching process can be adaptively adjusted.

[0126] The etching stop layer 310 and the barrier layer 320 can be formed by one or more methods such as physical vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD), thermal oxidation (Thermal Oxidation), sol-gel (Sol-Gel), etc. The formation process of the etching stop layer 310 and the barrier layer 320 can be determined according to the selection of their specific materials, and this disclosure does not make any specific limitations.

[0127] In some embodiments, when the blocking layer 320 and the etch stop layer 310 are made of the same material, in order to ensure the accuracy of the blocking layer 320 in transferring the mask pattern and avoid premature consumption of the blocking layer 320 during the etching process, the thickness of the blocking layer 320 can be greater than the thickness of the etch stop layer 310.

[0128] In some embodiments, when the barrier layer 320 and the etch stop layer 310 are made of different materials and the etching selectivity ratio between the barrier layer 320 and the etch stop layer 310 is greater than 1:1, the thickness of the barrier layer 320 may be equal to the thickness of the etch stop layer 310 .

[0129] In some embodiments, to ensure the accuracy of subsequent pattern transfer on the mask, the etching selectivity ratio of the barrier layer 320 to the second dielectric layer 302 is at least 1:10; and / or the etching selectivity ratio of the etch stop layer 310 to the first dielectric layer 301 is at least 1:10 to ensure the effectiveness of the pattern transfer.

[0130] In some specific embodiments, the etching selectivity ratio of the barrier layer 320 to the second dielectric layer 302 is at least 1:10, or the etching selectivity ratio of the etch stop layer 310 to the first dielectric layer 301 is at least 1:10, which at least ensures the transfer effectiveness of the mask pattern in the barrier layer 320 and the second dielectric layer 302.

[0131] In some specific embodiments, the etching selectivity ratio of the barrier layer 320 to the second dielectric layer 302 is at least 1:10, and the etching selectivity ratio of the etch stop layer 310 to the first dielectric layer 301 is at least 1:10, ensuring the transfer effectiveness of the mask pattern within the stacked structure 300.

[0132] In the embodiments provided in the present disclosure, Figure 10 As shown, in step S30 , an initial photoresist layer 400 is formed on the surface of the stacked structure 300 .

[0133] The initial photoresist layer 400 covers the surface of the stacked structure 300 . The initial photoresist layer 400 may be a positive photoresist or a negative photoresist. The specific type of the initial photoresist layer 400 may be selected according to actual etching requirements and is not specifically limited in this disclosure.

[0134] An anti-reflective layer (ARC) and a hard mask layer (not shown) may be further included between the stacked structure 300 and the initial photoresist layer 400 to improve the accuracy and yield of pattern transfer.

[0135] Among them, the hard mask layer can be a spin-on carbon (SOC) film layer. During the etching process, the etching selectivity ratio of the hard mask layer to the photoresist layer is at least 10:1. The hard mask protects the photoresist pattern from being quickly consumed, ensuring that the pattern is completely transferred to the stacked structure 300.

[0136] Among them, the anti-reflective layer can be a bottom anti-reflective layer (BARC), a top anti-reflective layer (TARC) or a silicon anti-reflective layer (SiARC). The specific type of the anti-reflective layer can be selected according to its setting position. The anti-reflective layer can suppress reflected light by absorption or destructive interference, thereby improving graphic accuracy.

[0137] In the embodiments provided in the present disclosure, Figure 11 As shown, in step S40 , the initial photoresist layer 400 is patterned using a mask to form a first patterned photoresist layer 410 .

[0138] In some embodiments, reference Figure 5 , combined with Figure 15 The mask may include a first light-transmitting area 110 and a second light-transmitting area 120, the second light-transmitting area 120 is arranged around the outer periphery of the first light-transmitting area 110, the second light-transmitting area 120 is adjacent to the first light-transmitting area 110, the transmittance of the second light-transmitting area 120 is less than the transmittance of the first light-transmitting area 110, the first light-transmitting area 110 corresponds to the contact hole 702 to be manufactured, and the area jointly formed by the first light-transmitting area 110 and the second light-transmitting area 120 corresponds to the bonding pad accommodating hole 701 to be manufactured; or the mask may be the mask provided in the above-mentioned embodiment of the present disclosure.

[0139] In some embodiments, reference Figure 6 The second light-transmitting area 120 of the mask can include multiple light-shielding rings 121 and multiple light-transmitting rings 122 . In the direction from the center to the edge of the first light-transmitting area 110 , the light-shielding rings 121 and the light-transmitting rings 122 are alternately arranged in sequence.

[0140] In some embodiments, reference Figure 7The second light-transmitting area 120 of the mask includes a plurality of sub-light-transmitting areas 123 and a plurality of sub-light-shielding areas 124, and each sub-light-transmitting area 123 and each sub-light-shielding area 124 are alternately arranged in sequence in a direction surrounding the periphery of the first light-transmitting area 110. The plurality of sub-light-transmitting areas 123 and the plurality of sub-light-shielding areas 124 together constitute an annular structure, and the annular structure is adjacent to the first light-transmitting area 110.

[0141] In some embodiments, reference Figure 8 The second light-transmitting region 120 of the mask includes a doping region 125 . The doping region 125 surrounds the outer periphery of the first light-transmitting region 110 , and the doping region 125 is adjacent to the first light-transmitting region 110 .

[0142] Among them, such as Figure 12 As shown, combined Figure 15 , forming a first patterned photoresist layer 410 , including: using a photomask to expose and develop the initial photoresist layer 400 to form a first through hole 501 and a second through hole 502 in the initial photoresist layer 400 .

[0143] The first through-hole 501 and the second through-hole 502 are connected and coaxial in the first direction X. The orthographic projection of the first through-hole 501 on the surface of the substrate 200 overlaps the orthographic projection of the second through-hole 502 on the surface of the substrate 200. The first through-hole 501 corresponds to the bonding pad receiving hole 701 in the photomask, and the second through-hole 502 corresponds to the contact hole 702. That is, the shape of the through-hole formed by the first through-hole 501 and the second through-hole 502 in the first patterned photoresist layer 410 is the same or substantially the same as the shape of the through-hole formed by the bonding pad receiving hole 701 and the contact hole 702 in the photomask, thereby ensuring the effectiveness of the transfer of the photomask pattern.

[0144] In the embodiments provided in the present disclosure, Figures 13 to 15 As shown, in step S50 , the stacked structure 300 is etched using the first patterned photoresist layer 410 to form a bonding pad receiving hole 701 and a contact hole 702 in the stacked structure 300 .

[0145] The following describes a specific process of etching the stacked structure 300 using the first patterned photoresist layer 410 using a specific embodiment. It should be noted that the specific steps of the following embodiment can be adaptively adjusted according to the actual process design, and all are within the scope of protection of this disclosure.

[0146] The stacked structure 300 is etched using the first patterned photoresist layer 410 , including steps S501 to S503 .

[0147] like Figure 13As shown, in step S501 , the blocking layer 320 is etched using the first patterned photoresist layer 410 as a mask until the surface of the second dielectric layer 302 is exposed, so as to form a first middle hole 601 in the blocking layer 320 and obtain a second patterned photoresist layer 420 .

[0148] The opening of the first middle hole 601 has the same size as the opening of the second through hole 502 , and the stacked structure 300 formed with the first middle hole 601 is defined as a first intermediate stacked structure 411 .

[0149] like Figure 14 As shown, in step S502, the first intermediate stack structure 411 is etched using the second patterned photoresist layer 420 and the barrier layer 320 having the first intermediate hole 601 as masks, and the size of the opening of the first intermediate hole 601 in the barrier layer 320 is enlarged to form a second intermediate hole 602 in the barrier layer 320. At the same time, the second dielectric layer 302 and the etch stop layer 310 are etched along the first direction X until the first dielectric layer 301 is exposed, so as to form a third intermediate hole 603 in the second dielectric layer 302 and the etch stop layer 320.

[0150] Among them, the second middle hole 602 and the third middle hole 603 are connected and coaxial in the first direction X, the orthographic projection of the second middle hole 602 on the surface of the substrate 200 covers the orthographic projection of the third middle hole 603 on the surface of the substrate 200, the opening of the second middle hole 602 is the same size as the opening of the first through hole 501, and the opening of the third middle hole 603 is the same size as the opening of the second through hole 502. The stacked structure 300 formed with the second middle hole 602 and the third middle hole 603 is defined as a second middle stacked structure 421.

[0151] like Figure 15 As shown, in step S503, the second intermediate stacked structure 421 is etched using the barrier layer 320 having the second intermediate hole 602 and the etch stop layer 310 having the third intermediate hole 603 as masks, and the size of the opening of the third intermediate hole 603 in the second dielectric layer 302 is enlarged to form a bonding pad receiving hole 701 in the second dielectric layer 302. At the same time, the first dielectric layer 301 is etched along the first direction X to a preset position to form a contact hole 702 in the etch stop layer 310 and the first dielectric layer 301.

[0152] The bonding pad receiving hole 701 passes through the second dielectric layer 302 , the contact hole 702 passes through the etch stop layer 310 and extends into the first dielectric layer 301 , and the connecting surface between the bonding pad receiving hole 701 and the contact hole 702 overlaps with the surface of the etch stop layer 310 away from the substrate 200 .

[0153] It should be noted that, in the above embodiment, the first patterned photoresist layer 410 is used to etch the stacked structure 300. Although it is performed in multiple steps, these steps can all be continuous etching processes, and there may be no actual boundaries between two adjacent steps. That is, using the first patterned photoresist layer 410 to etch the stacked structure 300 to form connected contact holes 702 and bonding pad receiving holes 701 in the stacked structure 300 can be an overall step and process, that is, a single photolithography process can be used to simultaneously form contact holes 702 and bonding pad receiving holes 701 in the stacked structure 300, so as to simplify the preparation process and improve the quality of the contact holes 702 and the bonding pad receiving holes 701.

[0154] The etching process in the formation method provided in the present disclosure may adopt one of dry etching (Dry Etching) or wet etching (Wet Etching). Furthermore, in order to control the sidewall morphology of the contact hole 702 and the bonding pad receiving hole 701 and improve the etching quality of the contact hole 702 and the bonding pad receiving hole 701, a dry etching process may be adopted. For example, one or more of high-density plasma etching (HDPE), reactive ion etching (RIE), plasma etching (Plasma Etching) or ion milling (Ion Milling) may be adopted. The specific dry etching process adopted may be selected according to actual etching requirements.

[0155] In the embodiments provided in the present disclosure, Figure 16 As shown, after step S50, the formation method may further include: synchronously depositing a conductive material layer in the bonding pad receiving hole 701 and the contact hole 702 to simultaneously form a bonding pad 710 and a contact plug 720; wherein, a bonding pad 710 is formed in the bonding pad receiving hole 701, and a contact plug 720 is formed in the contact hole 702 to form a complete semiconductor bonding structure, and electrical interconnection between semiconductors can be achieved through bonding between the bonding pads 710.

[0156] Among them, the bonding pad 710 and the contact plug 720 can be formed of one or more materials such as copper (Cu), aluminum (Al), titanium (Ti), tungsten (W), titanium nitride (TiN), etc., and can be formed by physical vapor deposition (PVD) or electroplating (Electroplating) and other methods. The materials, formation process and other parameters of the bonding pad 710 and the contact plug 720 can be selected according to the actual design requirements of the structure, and this disclosure does not make specific limitations.

[0157] It should be noted that although the steps of the method for forming a semiconductor bonding structure in the present disclosure are described in a specific order in the accompanying drawings, this does not require or imply that the steps must be performed in this specific order, or that all steps shown must be performed to achieve the desired results. Additionally or alternatively, certain steps may be omitted, multiple steps may be combined into one step, and / or one step may be broken down into multiple steps.

[0158] Those skilled in the art will readily appreciate other embodiments of the present disclosure after considering the specification and practicing the invention disclosed herein. This application is intended to cover any variations, uses, or adaptations of the present disclosure that follow the general principles of the present disclosure and include common knowledge or customary techniques in the art not disclosed herein. The description and examples are to be considered as exemplary only, with the true scope and spirit of the present disclosure being indicated by the appended claims.

Claims

1. A method for manufacturing a photomask, characterized in that: include: providing a substrate; forming a light shielding layer on the substrate; Etching the light shielding layer to form a first light-transmitting area, wherein the first light-transmitting area corresponds to the contact hole to be formed; forming a second light-transmitting area, wherein the area formed by the second light-transmitting area and the first light-transmitting area corresponds to the bonding pad receiving hole to be fabricated; The second light-transmitting area is arranged around the periphery of the first light-transmitting area, and the second light-transmitting area is adjacent to the first light-transmitting area, and the transmittance of the second light-transmitting area is lower than the transmittance of the first light-transmitting area.

2. The method for manufacturing a photomask according to claim 1, wherein: The forming of the second light-transmitting area includes: The remaining light-shielding layer is etched to form a plurality of light-shielding rings and a plurality of light-transmitting rings on the periphery of the first light-transmitting area, wherein the light-shielding rings and the light-transmitting rings are alternately arranged in a direction from the center to the edge of the first light-transmitting area.

3. The method for manufacturing a photomask according to claim 2, wherein: The width of each of the light shielding rings is equal; and / or The width of each of the light-transmitting rings is equal; and / or The width of the light-shielding ring is equal to the width of the light-transmitting ring.

4. The method for manufacturing a photomask according to claim 1, wherein: The forming of the second light-transmitting area includes: The remaining light-shielding layer is etched to form a plurality of sub-light-transmitting areas and a plurality of sub-light-shielding areas on the periphery of the first light-transmitting area, and the sub-light-transmitting areas and the sub-light-shielding areas are alternately arranged in sequence in the direction surrounding the periphery of the first light-transmitting area, and the plurality of sub-light-transmitting areas and the plurality of sub-light-shielding areas together constitute an annular structure, and the annular structure is adjacent to the first light-transmitting area.

5. The method for manufacturing a photomask according to claim 4, wherein: The sub-light-shielding areas are in the shape of circular sectors, the sub-light-shielding areas are concentric with the first light-transmitting area, and the central angles of the sub-light-shielding areas are equal; and / or The sub-light-transmitting areas are in the shape of a circular sector, the sub-light-transmitting areas are concentric with the first light-transmitting area, and the central angles of the sub-light-transmitting areas are equal; and / or The central angles of the sub-light-shielding area and the sub-light-transmitting area are equal.

6. A photomask, characterized in that: The method is made by the method according to any one of claims 1 to 5.

7. A method for forming a semiconductor bonding structure, characterized in that: include: providing a substrate; forming a stacked structure on the substrate, the stacked structure comprising a first dielectric layer, an etch stop layer, a second dielectric layer, and a barrier layer sequentially formed along a first direction and in a direction away from the surface of the substrate, wherein the first direction is a direction perpendicular to the surface of the substrate; forming an initial photoresist layer on the surface of the stacked structure; The initial photoresist layer is patterned using a photomask to form a first patterned photoresist layer; wherein the photomask includes a first light-transmitting region and a second light-transmitting region, the second light-transmitting region is arranged around the periphery of the first light-transmitting region, the second light-transmitting region is adjacent to the first light-transmitting region, the transmittance of the second light-transmitting region is less than the transmittance of the first light-transmitting region, the first light-transmitting region corresponds to a contact hole to be fabricated, and the region formed by the first light-transmitting region and the second light-transmitting region corresponds to a bonding pad receiving hole to be fabricated; or the photomask is the photomask according to claim 6; The stacked structure is etched using the first patterned photoresist layer to form the bonding pad receiving hole and the contact hole in the stacked structure, wherein the bonding pad receiving hole and the contact hole are connected and coaxial in the first direction, and the orthographic projection of the bonding pad receiving hole on the surface of the substrate covers the orthographic projection of the contact hole on the surface of the substrate.

8. The method for forming a semiconductor bonding structure according to claim 7, wherein: The forming of the first patterned photoresist layer comprises: exposing and developing the initial photoresist layer using the photomask to form a first through hole and a second through hole in the initial photoresist layer; The first through hole and the second through hole are connected in the first direction and are coaxial, and the orthographic projection of the first through hole on the surface of the substrate covers the orthographic projection of the second through hole on the surface of the substrate.

9. The method for forming a semiconductor bonding structure according to claim 8, wherein: The etching of the stacked structure by using the first patterned photoresist layer includes: Using the first patterned photoresist layer as a mask, the barrier layer is etched until the surface of the second dielectric layer is exposed, so as to form a first middle hole in the barrier layer and obtain a second patterned photoresist layer; wherein the opening of the first middle hole is the same size as the opening of the second through hole, and the stacked structure formed with the first middle hole is defined as a first middle stacked structure.

10. The method for forming a semiconductor bonding structure according to claim 9, wherein: The etching of the stacked structure using the first patterned photoresist layer further includes: After forming the first middle hole in the barrier layer, etching the first middle stacked structure using the second patterned photoresist layer and the barrier layer having the first middle hole as masks to enlarge the size of the opening of the first middle hole in the barrier layer to form a second middle hole in the barrier layer, and simultaneously etching the second dielectric layer and the etch stop layer along the first direction until the first dielectric layer is exposed to form a third middle hole in the second dielectric layer and the etch stop layer; In which, the second middle hole is connected and coaxial with the third middle hole in the first direction, the orthographic projection of the second middle hole on the surface of the substrate covers the orthographic projection of the third middle hole on the surface of the substrate, the opening of the second middle hole is the same size as the opening of the first through hole, and the opening of the third middle hole is the same size as the opening of the second through hole, and the stacked structure formed with the second middle hole and the third middle hole is defined as a second middle stacked structure.

11. The method for forming a semiconductor bonding structure according to claim 10, wherein: The etching of the stacked structure using the first patterned photoresist layer further includes: After forming the third middle hole in the second dielectric layer and the etch barrier layer, etching the second middle stacked structure using the barrier layer having the second middle hole and the etch stop layer having the third middle hole as masks to enlarge the size of the opening of the third middle hole in the second dielectric layer to form the bonding pad receiving hole in the second dielectric layer, and simultaneously etching the first dielectric layer along the first direction to a predetermined position to form the contact hole in the etch stop layer and the first dielectric layer; The bonding pad receiving hole passes through the second dielectric layer, the contact hole passes through the etching stop layer and extends into the first dielectric layer, and the connecting surface between the bonding pad receiving hole and the contact hole overlaps with the surface of the etching stop layer away from the substrate.

12. The method for forming a semiconductor bonding structure according to claim 7, wherein: After forming the bonding pad receiving hole and the contact hole in the stacked structure, the method further includes: Synchronously depositing a conductive material layer in the bonding pad receiving hole and the contact hole to simultaneously form a bonding pad and a contact plug; Wherein, the bonding pad is formed in the bonding pad accommodating hole, and the contact plug is formed in the contact hole.

13. The method for forming a semiconductor bonding structure according to any one of claims 7 to 12, wherein: The second light-transmitting area includes a plurality of light-shielding rings and a plurality of light-transmitting rings. In a direction from the center to the edge of the first light-transmitting area, the light-shielding rings and the light-transmitting rings are alternately arranged in sequence.

14. The method for forming a semiconductor bonding structure according to any one of claims 7 to 12, wherein: The second light-transmitting area includes multiple sub-light-transmitting areas and multiple sub-light-shielding areas, and each of the sub-light-transmitting areas and each of the sub-light-shielding areas are alternately arranged in sequence in the direction surrounding the circumference of the first light-transmitting area. The multiple sub-light-transmitting areas and the multiple sub-light-shielding areas together constitute an annular structure, and the annular structure is adjacent to the first light-transmitting area.

15. The method for forming a semiconductor bonding structure according to any one of claims 7 to 12, wherein: The etching selectivity ratio of the barrier layer to the second dielectric layer is at least 1:10; and / or the etching selectivity ratio of the etch stop layer to the first dielectric layer is at least 1:10.

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