In-situ chamber cleaning endpoint detection system and method using computer vision system

Abstract

The invention relates to an in-situ chamber cleaning endpoint detection system and method using a computer vision system. A system includes a camera mounted outside and adjacent to a window of a processing chamber configured to process a semiconductor substrate. The window enables the camera to observe components within the processing chamber. The camera is configured to generate a video signal indicative of a state of the component during processing being performed within the processing chamber. The system also includes a controller coupled to the processing chamber. The controller is configured to: control the camera; processing the video signal from the camera; determining a state of the component from the processing of the video signal; and determining whether to terminate the processing according to the state of the component.

Description

This application is a divisional application of the invention patent application with application number 201811223497.8, application date October 19, 2018, and invention name “In-situ chamber cleaning endpoint detection system and method using computer vision system”. CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims the benefit of U.S. Provisional Application No. 62 / 575,190, filed October 20, 2017. The entire disclosure of the above application is incorporated herein by reference. Technical Field

[0002] The present disclosure relates to substrate processing systems, and more particularly to detection systems and methods for detecting the endpoint of residual film removal using a computer vision system. Background Art

[0003] The background description provided herein is for the purpose of generally presenting the context of the present disclosure. No admission is made, either explicitly or implicitly, that the work of the presently designated inventors to the extent described in this background section and in any aspects of the description that were not identified as prior art at the time the application was filed, is prior art to the present disclosure.

[0004] Substrate processing systems are used to perform processes such as depositing and etching films on substrates such as semiconductor wafers. For example, deposition can be performed using chemical vapor deposition (CVD), atomic layer deposition (ALD), or other deposition processes to deposit conductive films, dielectric films, or other types of films. During deposition, one or more precursor gases can be supplied to the process chamber during one or more process steps. Plasma can be used to initiate chemical reactions.

[0005] After deposition, the process gases are evacuated and the substrate is removed from the chamber. As the film is deposited on the substrate, it also deposits on components within the chamber. Over time, residual film accumulates on these components and needs to be removed to prevent particle contamination, mechanical deformation, and / or substrate defects. Periodically, chamber cleaning is performed to remove residual film from components within the chamber.

[0006] Currently, fixed-time cleaning processes are used. Verification of cleaning is performed manually using a chamber viewport or using chemical sensors such as infrared absorption detectors and / or residual gas analyzers (RGAs). Timing-based cleaning requires manual verification of the process chamber's clean state. Another limitation of this approach is the inability to predict cleaning times when changes to the process or hardware occur. Any modification to the process recipe or chamber configuration can result in different accumulation of residual film and different etch rates for the chamber cleaning process. This results in different cleaning times that require manual characterization.

[0007] Chemical sensors are often expensive and can have limited applications. For example, infrared absorption detectors are often limited to specific gas species. RGAs are also limited to the specific atomic masses that the detector can analyze. Summary of the Invention

[0008] A system includes a camera mounted outside and adjacent to a window of a processing chamber configured to process semiconductor substrates. The window enables the camera to observe a component within the processing chamber. The camera is configured to generate a video signal indicating a status of the component during processing being performed within the processing chamber. The system also includes a controller coupled to the processing chamber. The controller is configured to: control the camera; process the video signal from the camera; determine a status of the component based on the processing of the video signal; and determine whether to terminate the processing based on the status of the component.

[0009] In other features, in response to the process being a cleaning process performed to remove material deposited on the component by a previously performed process, the controller is configured to: compare a change in a property of a feature of the component observed across multiple frames of the video signal to a predetermined threshold; determine whether the material deposited on the component has been removed based on the comparison; and in response to determining that the material deposited on the component has been removed, terminate the cleaning process.

[0010] In other features, in response to the process being a cleaning process performed to remove material deposited on the component by a previously performed process, the controller is configured to: compare an image captured from the video signal with a predetermined image; determine whether the material deposited on the component has been removed based on the comparison; and in response to determining that the material deposited on the component has been removed, terminate the cleaning process.

[0011] In other features, the controller is configured to: receive data from one or more sensors in the process chamber; and generate a model based on the data received from the one or more sensors and a video signal received from the camera, the video signal indicating a state of the component when the process was previously performed in the process chamber. The controller is further configured to use the model to: process the video signal; determine a state of the component based on the processing of the video signal; and determine whether to terminate the process based on the determined state of the component.

[0012] In other features, the system further comprises an optical filter disposed between the camera and the window. The optical filter is configured to filter one or more wavelengths of light received from the component through the window and output a filtered signal to the camera. The controller is configured to determine the status of the component based on processing the filtered signal using optical interferometry.

[0013] In other features, the controller is configured to determine whether the process has been performed on the entire component before terminating the process.

[0014] In other features, the controller is configured to determine whether the process is performed evenly across the component before terminating the process.

[0015] In other features, the controller is configured to determine a rate at which the process is performed at different locations on the component.

[0016] In other features, the component includes a semiconductor substrate, and the process includes a film removal process performed to remove a film from the semiconductor substrate. The controller is configured to determine whether the film is removed from the entire component before terminating the process.

[0017] In other features, the controller is configured to focus the camera at an edge of the component and determine whether the processing is performed at the edge of the component before terminating the processing.

[0018] In other features, the component includes a semiconductor substrate, and the process includes a deposition process. The system also includes a first optical filter disposed between the camera and the window. The first optical filter is configured to filter wavelengths of ultraviolet light received from the component through the window. The system also includes a second optical filter disposed between the camera and the window. The second optical filter is configured to filter wavelengths of infrared light received from the component through the window. The controller is configured to: determine a thickness of the deposited material at multiple locations on the component based on an output of the first optical filter; determine a temperature at multiple locations on the component based on an output of the second optical filter; correlate the determination of the thickness with the determination of the temperature; and determine a uniformity of deposition across the component based on the correlation.

[0019] In other features, the component comprises a semiconductor substrate, and the process comprises a deposition process. The system further comprises an optical sensor configured to view a bottom portion of the component. The controller is configured to: focus the camera on a top portion of the component; process images received from the optical sensor and the camera; and determine deposition uniformity across the top portion and across the bottom portion of the component based on the processing of the images.

[0020] In other features, the system further includes a second controller coupled to a second process chamber in which the same process is performed. The second controller is configured to control a second camera associated with the second process chamber. The system further includes a third controller configured to: analyze data from the controller and the second controller; compare the performance of the process in the process chamber with the performance of the process in the second process chamber based on the analyzed data; and determine, based on the comparison, whether the performance of the process in the process chamber matches the performance of the process in the second process chamber.

[0021] In other features, the system further includes a second controller coupled to a second process chamber in which the same process is performed on the same component. The second controller is configured to control a second camera associated with the second process chamber. The system further includes a third controller configured to: analyze data from the controller and the second controller; compare, based on the analyzed data, a performance of the process on the component in the process chamber with a performance of the process on the component in the second process chamber; and determine, based on the comparison, whether the performance of the process on the component in the process chamber matches the performance of the process on the component in the second process chamber.

[0022] In other features, in response to the process in the process chamber completing earlier than the process in the second process chamber, the third controller is configured to terminate the process in the process chamber earlier than the process in the second process chamber.

[0023] In still other features, a method includes controlling a camera mounted outside and adjacent a window of a process chamber configured to process semiconductor substrates. The window enables the camera to view a component within the process chamber. The method further includes: using the camera to generate a video signal indicating a status of the component during a process being performed within the process chamber; determining the status of the component based on the video signal; and determining whether to terminate the process based on the status of the component.

[0024] In other features, the processing includes a cleaning process performed to remove material deposited on the component by a previously performed process, and the method further includes: comparing a change in a property of a feature of the component observed across multiple frames of the video signal to a predetermined threshold; determining whether the material deposited on the component has been removed based on the comparison; and terminating the cleaning process in response to determining that the material deposited on the component has been removed.

[0025] In other features, the processing includes a cleaning process performed to remove material deposited on the component by a previously performed processing, and the method further includes: comparing an image captured from the video signal with a predetermined image; determining whether the material deposited on the component has been removed based on the comparison; and terminating the cleaning process in response to determining that the material deposited on the component has been removed.

[0026] In other features, the method further includes: receiving data from one or more sensors in the process chamber; and generating a model based on the data received from the one or more sensors and a video signal received from the camera. The video signal indicates a state of the component when the process was previously performed in the process chamber. The method further includes using the model to: process the video signal; determine a state of the component based on the processing of the video signal; and determine whether to terminate the process based on the determined state of the component.

[0027] In other features, the method further comprises filtering one or more wavelengths of light received from the component through the window and determining the state of the component based on the filtering using optical interferometry.

[0028] In other features, the method further comprises determining whether the process has been performed on the entire component before terminating the process.

[0029] In other features, the method further comprises determining whether the process is performed evenly across the component before terminating the process.

[0030] In other features, the method further comprises determining a rate at which the process is performed at different locations on the component.

[0031] In other features, the component includes a semiconductor substrate, and the processing includes a film removal process performed to remove a film from the semiconductor substrate. The method further includes determining whether the film is removed from the entire component before terminating the processing.

[0032] In other features, the method further includes focusing the camera at an edge of the part and determining whether the processing is performed at the edge of the part before terminating the processing.

[0033] In other features, the component comprises a semiconductor substrate, and the process comprises a deposition process. The method further comprises: filtering wavelengths of ultraviolet light received from the component through the window; filtering wavelengths of infrared light received from the component through the window; determining a thickness of the deposited material at a plurality of locations on the component based on the filtering of the wavelengths of ultraviolet light; determining a temperature at a plurality of locations on the component based on the filtering of the wavelengths of infrared light; correlating the determination of the thickness with the determination of the temperature; and determining a deposition uniformity across the component based on the correlation.

[0034] In other features, the component comprises a semiconductor substrate, and the process comprises a deposition process. The method further comprises observing a bottom portion of the component using an optical sensor; focusing the camera on a top portion of the component; processing images received from the optical sensor and the camera; and determining deposition uniformity across the top portion and across the bottom portion of the component based on the processing of the images.

[0035] In other features, the method further includes receiving data from a second camera associated with a second process chamber in which the same process is performed; analyzing data from the process chamber and the second process chamber; comparing a performance of the process in the process chamber with a performance of the process in the second process chamber based on the analyzed data; and determining, based on the comparison, whether the performance of the process in the process chamber matches the performance of the process in the second process chamber.

[0036] In other features, the method further includes receiving data from a second camera associated with a second processing chamber in which the same process is performed on the same component; analyzing data from the processing chamber and the second processing chamber; comparing a performance of the process on the component in the processing chamber with a performance of the process on the component in the second processing chamber based on the analyzed data; and determining, based on the comparison, whether the performance of the process on the component in the processing chamber matches the performance of the process on the component in the second processing chamber.

[0037] In other features, in response to the process in the process chamber completing earlier than the process in the second process chamber, the method further includes terminating the process in the process chamber earlier than the process in the second process chamber.

[0038] Specifically, some aspects of the present invention can be described as follows: 1. A system comprising: a camera mounted externally and adjacent a window of a processing chamber configured to process semiconductor substrates, the window enabling the camera to observe components within the processing chamber, the camera being configured to generate video signals indicative of a status of the components during processing being performed within the processing chamber; and a controller coupled to the process chamber and configured to: controlling the camera; processing the video signal from the camera; determining a status of the component based on the processing of the video signal; and Whether to terminate the process is determined based on the status of the component. 2. The system of clause 1, wherein, in response to the process being a cleaning process performed to remove material deposited on the component by a previously performed process, the controller is configured to: comparing a change in a property of a feature of the component observed across a plurality of frames of the video signal to a predetermined threshold; determining whether the material deposited on the component is removed based on the comparison; and terminating the cleaning process in response to determining that the material deposited on the component is removed. 3. The system of clause 1 , wherein, in response to the process being a cleaning process performed to remove material deposited on the component by a previously performed process, the controller is configured to: comparing an image captured from the video signal with a predetermined image; determining whether the material deposited on the component is removed based on the comparison; and terminating the cleaning process in response to determining that the material deposited on the component is removed. 4. The system of clause 1, wherein the controller is configured to: receiving data from one or more sensors in the processing chamber; generating a model based on the data received from one or more sensors and a video signal received from the camera, the video signal indicating a state of the component when the process was previously performed in the processing chamber; and Use this model to: processing the video signal; determining a status of the component based on the processing of the video signal; and Based on the determined status of the component, it is determined whether to terminate the process. 5. The system of clause 1, further comprising: an optical filter disposed between the camera and the window, the optical filter configured to filter one or more wavelengths of light received from the component through the window and output a filtered signal to the camera, Wherein the controller is configured to determine the status of the component based on processing the filtered signal using optical interferometry. 6. The system of clause 5, wherein the controller is configured to determine whether the process has been performed on the entire component before terminating the process. 7. The system of clause 5, wherein the controller is configured to determine whether the process is performed evenly across the component before terminating the process. 8. The system of clause 5, wherein the controller is configured to determine a rate at which the processing is performed at different locations on the component. 9. The system of clause 1, wherein the component comprises a semiconductor substrate, and the processing comprises a film removal process performed to remove a film from the semiconductor substrate, and wherein the controller is configured to determine whether the film on the entire component is removed before terminating the processing. 10. The system of clause 1, wherein the controller is configured to focus the camera at an edge of the component and determine whether the processing is performed at the edge of the component before terminating the processing. 11. The system of clause 1, wherein the component comprises a semiconductor substrate and the process comprises a deposition process, the system further comprising: a first optical filter disposed between the camera and the window, the first optical filter configured to filter wavelengths of ultraviolet light received from the component through the window; and a second optical filter disposed between the camera and the window, the second optical filter configured to filter wavelengths of infrared light received from the component through the window; Wherein, the controller is configured as follows: determining a thickness of deposited material at a plurality of locations on the component based on an output of the first optical filter; determining a temperature at a plurality of locations on the component based on an output of the second optical filter; correlating said determination of said thickness with said determination of said temperature; and Deposition uniformity across the component is determined based on the correlation. 12. The system of clause 1, wherein the component comprises a semiconductor substrate and the process comprises a deposition process, the system further comprising: an optical sensor configured to observe the bottom of the component, The controller is configured to: focusing the camera on a top portion of the component; processing images received from the optical sensor and the camera; and Deposition uniformity across the top portion and across the bottom portion of the component is determined based on the processing of the images. 13. The system of clause 1, further comprising: a second controller coupled to a second processing chamber in which the same process is performed, the second controller being configured to control a second camera associated with the second processing chamber; and A third controller is configured to: analyzing data from the controller and the second controller; comparing the performance of the process in the process chamber to the performance of the process in the second process chamber based on the analyzed data; and Based on the comparison, it is determined whether the performance of the process in the process chamber matches the performance of the process in the second process chamber. 14. The system of clause 1, further comprising: a second controller coupled to a second processing chamber in which the same process is performed on the same component, the second controller being configured to control a second camera associated with the second processing chamber; and A third controller is configured to: analyzing data from the controller and the second controller; comparing the performance of the process on the component in the process chamber with the performance of the process on the component in the second process chamber based on the analyzed data; and Based on the comparison, it is determined whether the performance of the process on the component in the process chamber matches the performance of the process on the component in the second process chamber. 15. The system of clause 14, wherein, in response to the processing in the processing chamber being completed earlier than the processing in the second processing chamber, the third controller is configured to terminate the processing in the processing chamber earlier than the processing in the second processing chamber.

[0039] Further scope of applicability of the present disclosure will become apparent from the detailed description, claims and drawings.The detailed description and specific examples are intended for purposes of illustration only and are not intended to limit the scope of the disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] The present invention will be more fully understood from the detailed description and accompanying drawings, in which:

[0041] Figure 1 is a functional block diagram of an example of a substrate processing system according to the present disclosure for generating a video signal and using a computer vision system to detect an endpoint of residual film removal based on the video signal;

[0042] Figure 2 is a diagram illustrating a method for operating Figure 1 a flow chart of an example of a method of a substrate processing system;

[0043] Figure 3 is a functional block diagram of an example of a substrate processing system according to the present disclosure for collecting sensor data to generate a learning model that is used by a computer vision system to identify an endpoint for residual film removal;

[0044] Figure 4-5 is a flow chart illustrating an example of a method for generating a learning model to identify an endpoint of residual film removal according to the present disclosure;

[0045] Figure 6 is a flow chart illustrating an example of a method for detecting an endpoint of residual film removal using a learning model according to the present disclosure;

[0046] Figure 7A is a plan view illustrating an example of a structure located in a processing chamber having markings to facilitate endpoint detection by a computer vision system according to the present disclosure;

[0047] Figure 7B is a side view illustrating an example of a structure located in a processing chamber having markings to facilitate endpoint detection by a computer vision system according to the present disclosure;

[0048] Figure 8 is a functional block diagram of a system for optimizing processing conditions using a controller connected to multiple processing controllers including a computer vision system according to the present disclosure.

[0049] Figure 9 is a flow chart illustrating an example of a method for comparing performance of processes performed within multiple chambers and matching process chambers based on the performance of the processes in the multiple chambers according to the present disclosure;

[0050] Figure 10is a flow chart illustrating an example of a method for matching process chambers at the component level according to the present disclosure;

[0051] Figure 11A is a schematic diagram of a system for determining uniformity of a film deposited on a substrate according to the present disclosure;

[0052] Figure 11B is a schematic diagram of a system for determining whether material is uniformly deposited on the top and bottom of a substrate according to the present disclosure;

[0053] Figure 12 is a flow chart illustrating an example of a method for determining whether a process (e.g., cleaning, etching, deposition, etc.) performed on a component has been performed uniformly across the component according to the present disclosure;

[0054] Figure 13 is a flow chart illustrating an example of a method for determining whether a process (eg, cleaning, etching, deposition, etc.) performed on a component has been performed to the edge of the component according to the present disclosure;

[0055] Figure 14 is a flow chart illustrating an example of a method for determining uniformity of a film deposited on a substrate according to the present disclosure; and

[0056] Figure 15 is a flow chart illustrating an example of a method for determining whether material is uniformly deposited on both the top and bottom of a substrate according to the present disclosure.

[0057] Among the drawings, reference numbers may be reused to identify similar and / or identical elements. DETAILED DESCRIPTION

[0058] The present disclosure relates to a system and method for detecting the endpoint of residual film removal using a computer vision system. The system and method utilize a camera mounted outside a processing chamber, adjacent to a window within the processing chamber. The camera operates within the visible and / or infrared wavelength range and generates a video signal (as used herein, the term video signal also includes a series of still images taken at predetermined intervals). The video signal generated by the camera is processed and analyzed by the computer vision system to determine when the endpoint of residual film removal has been reached.

[0059] In some examples, the endpoint is identified based on a change in a detected feature of a component in the process chamber (e.g., shape or edge identification, contrast, color, brightness, or other characteristic). For example, the computer vision system can compare one or more attributes of one or more features frame by frame, the difference across multiple frames, or the difference across a rolling window of frames to one or more predetermined thresholds. In other examples, the endpoint is identified when a marking (made on the component below the residual film) is exposed with sufficient clarity.

[0060] In some examples, a computer vision system uses a learning model (such as a neural network or other deep learning model) trained using video signals and a chemical sensor such as an absorption sensor or an RGA sensor. During learning, the learning model identifies one or more attributes that are indicators of an endpoint. Once the learning model is generated, the chemical sensor is no longer required.

[0061] Now refer to Figure 1 , shows an example of a substrate processing system for performing substrate processing such as deposition. A substrate is arranged in a processing chamber and substrate processing such as deposition is performed. The substrate is removed and one or more additional substrates are processed. Over time, residual film or other materials accumulate on components such as sidewalls, substrate supports, gas distribution devices, etc. located in the processing chamber. Cleaning is performed regularly to remove residual film or other materials deposited on components in the processing chamber. In one example, nitrogen trifluoride (NF3) remote plasma is used during cleaning. Although specific examples of substrate processing systems and processes are shown and described, other substrate processing systems and processes can be used. For example, throughout this disclosure, cleaning is only described as plasma processing. In contrast, cleaning can be a chemical process. For example, instead of using plasma for cleaning, ClF3 can be used for the cleaning described herein. The teachings of this disclosure also apply when a chemical process is used instead of plasma for cleaning.

[0062] Figure 1 The substrate processing system 110 in FIG. 1 includes a processing chamber 112 that surrounds the other components of the substrate processing system 110 and contains an RF plasma (if used for a particular substrate process). The substrate processing system 110 includes a showerhead 114 or other gas distribution device and a substrate support assembly 116. A substrate 118 is disposed on the substrate support assembly 116. The showerhead 114 introduces and distributes process gases.

[0063] If plasma is used, the plasma used during substrate processing or cleaning can be a direct plasma or a remote plasma. In one example, an RF generation system 130 generates an RF voltage and outputs the RF voltage to the showerhead 114 or substrate support assembly 116 (the other being DC grounded, AC grounded, or floating). By way of example only, the RF generation system 130 can include an RF voltage generator 132 that generates the RF voltage fed to the showerhead 114 or substrate support assembly 116 by a matching network 134. In some examples, an in-situ plasma is used during substrate processing, while a remote plasma is delivered during cleaning.

[0064] The gas delivery system 140 includes one or more gas sources 142-1, 142-2, ... and 142-N (collectively referred to as gas sources 142), where N is an integer greater than zero. The gas sources 142 provide one or more etching gas mixtures, precursor gas mixtures, cleaning gas mixtures, ashing gas mixtures, etc. to the processing chamber 112. Gasified precursors may also be used. The gas sources 142 are connected to a manifold 148 via valves 144-1, 144-2, ... and 144-N (collectively referred to as valves 144) and mass flow controllers 146-1, 146-2, ... and 146-N (collectively referred to as mass flow controllers 146). The output of the manifold 148 is fed to the processing chamber 112. By way of example only, the output of the manifold 148 is fed to the showerhead 114.

[0065] The heater 150 can be connected to a heater coil (not shown) disposed in the substrate support assembly 116. The heater 150 can be used to control the temperature of the substrate support assembly 116 and the substrate 118. A valve 160 and a pump 162 can be used to exhaust reactants from the processing chamber 112. A controller 170 can be used to control the components of the substrate processing system 110. By way of example only, the controller 170 can be used to control the flow of process gases, monitor process parameters such as temperature, pressure, power, etc., ignite and extinguish the plasma, remove reactants, etc.

[0066] The processing chamber 112 includes one or more windows 172 located on one or more surfaces of the processing chamber 112. One or more cameras 174 generate video signals of the substrate support assembly 116, the substrate, or other chamber components.

[0067] Controller 170 includes a computer vision system 180 that receives one or more video signals from camera 174. Based on this, computer vision system 180 identifies the endpoint of residual film removal. Although a single camera 174 is shown, one or more additional cameras 174 may be used. In some examples, camera positioning device 182 adjusts the position of camera 174 to change the field of view of camera 174. In some examples, controller 170 can be configured to change the position of camera 174 before, during, or after detecting the endpoint of residual film removal. In some examples, one or more filters are positioned between camera 174 and the process chamber to filter one or more wavelengths or wavelength ranges.

[0068] In some examples, computer vision system 180 determines differences in visual characteristics of the video to identify the endpoint of residual film removal. For example, computer vision system 180 can compare color, brightness, and / or contrast levels of different frames, differences across multiple frames, or differences across a rolling window of frames.

[0069] In other examples, computer vision system 180 detects the endpoint of residual film removal by fully identifying a marking located on one or more components in the process chamber. As residual film is removed from one or more components during cleaning, characteristics such as the edges, color, pattern, and / or overall shape of the marking become more distinct. A correlation function can be used to compare the captured image to a predetermined image. Detection can be triggered when the calculated correlation value exceeds a predetermined threshold. The endpoint can be determined when a predetermined event occurs, or a predetermined event can be used to start a timer after which the endpoint can be declared.

[0070] In other examples, a chemical sensor such as an absorption sensor or an RGA sensor and a video signal can be used to train the learning model. Once trained, the learning model detects the endpoint based on the video signal and does not require the use of a chemical sensor, as will be further described below.

[0071] Now refer to Figure 2 , shows a method 200 for detecting the endpoint of residual film removal using a video signal and a computer vision system. At 202, if the substrate needs to be processed, the method continues at 203. At 203, the substrate is loaded into a processing chamber and substrate processing such as deposition is performed.

[0072] At 204, after performing substrate processing, the substrate is removed from the process chamber. At 206, the method determines whether the chamber needs cleaning. If 206 is false, the method returns to 202. If 206 is true, the method continues at 208 and supplies a remote plasma (or supplies a gas mixture to the process chamber and ignites the plasma). If an in-situ plasma is used, a filter can be placed between the video camera and the process chamber.

[0073] At 210, a video signal is generated during the cleaning process. At 212, a computer vision system performs video analysis on the video signal. At 214, the computer vision system processes the video signal and detects the endpoint of film removal. At 216, the method determines whether the endpoint has been detected. If 216 is false, the method returns to 210. If 216 is true, the method continues at 218 and stops supplying the remote plasma (or extinguishes the plasma and turns off the plasma gas mixture). From 218, the method continues to 202.

[0074] Now refer to Figure 3, a learning model can be generated and used to detect the endpoint of residual film removal. Modeling module 220 generates a learning model to be used by computer vision system 180. The learning model is generated based on training data including video signals and the output of chemical sensor 230 such as an absorption or RGA sensor. Although a specific location is shown, the chemical sensor can be arranged in other locations, such as at the exhaust. Although modeling module 220 is shown as being located in controller 170, modeling module 220 can be located in another computer (not shown) during model generation, and the model can be sent to controller 170 and / or stored in controller 170.

[0075] Modeling module 220 uses multiple sets of training data to identify features in the video signal that are indicators of endpoints. In some examples, the multiple sets of training data are stored in a local or remote database 224. Once the learning model is generated, it can be loaded into controller 170 (as shown at 228) and chemical sensor 230 is no longer required.

[0076] In some examples, the learning model includes a supervised learning model selected from the group consisting of a linear model, a support vector machine model, a decision tree model, a random forest model, and a Gaussian model. However, the present disclosure is not limited to supervised learning. Additionally or alternatively, unsupervised learning can be used. In other examples, the learning model uses principal component analysis (PCA), neural networking, autoencoding, regression analysis, and / or partial least squares (PLS). For example, the neural network can utilize a convolutional neural network (CNN), a recursive neural network (RNN), reinforcement learning (a reward-based model), and / or other methods.

[0077] Now refer to Figure 4-5 , a method for generating a computer vision learning model to identify the endpoint of residual film removal is shown. A method 400 is shown for generating training data for generating a learning model used by a computer vision system to detect the endpoint of residual film removal. At 404, the method determines whether the substrate needs to be processed. If 404 is true, the method continues at 408. At 408, the substrate is loaded into a processing chamber and substrate processing, such as deposition, is performed.

[0078] At 412, after performing substrate processing, the substrate is removed from the processing chamber. At 416, the method determines whether the chamber needs cleaning. If 416 is false, the method returns to 404. If 416 is true, the method supplies a remote plasma or a gas mixture to the processing chamber and energizes the plasma at 422. At 430, the method generates and stores a video signal of one or more structures in the processing chamber. At 434, the method generates and stores chemical sensor data generated by a chemical sensor. At 438, the endpoint of residual film removal is detected using the chemical sensor. At 440, the method determines whether the residual film has been removed. If 440 is false, the method returns to 430. If 440 is true, the method continues at 444 and stops supplying the remote plasma (or extinguishes the plasma and turns off the plasma gas mixture).

[0079] exist Figure 5 In the Figure 4 The method 450 converts the training data generated in the process into a learning model. At 454, the method determines whether a sufficient number of training samples have been collected. At 458, the method generates a learning model that correlates the video signal with the endpoint of residual film removal determined by the chemical sensor. At 462, the model is stored in the controller for use in the cleaning process. At 466, the controller uses the learning model based on the video (or a series of still images) to identify the endpoint of residual film removal without using a chemical sensor such as an absorption or RGA sensor.

[0080] Now refer to Figure 6 , shows a method 500 that uses video signals and a computer vision system with a learning model to detect the endpoint of residual film removal. At 502, if the substrate needs to be processed, the method continues at 503. At 503, the substrate is loaded into a processing chamber and substrate processing such as deposition is performed.

[0081] At 504, after performing substrate processing, the substrate is removed from the processing chamber. At 506, the method determines whether the chamber needs to be cleaned. If 506 is false, the method returns to 502. If 506 is true, the method continues at 508 and supplies a remote plasma (or supplies a gas mixture to the processing chamber and ignites a plasma). If an in-situ plasma is used, a filter can be placed between the camera and the processing chamber.

[0082] At 510, a video signal is generated during the cleaning process. At 512, the computer vision system performs video analysis on the video signal using the learning model. At 514, the computer vision system uses the learning model and the video signal to detect the endpoint of film removal. At 516, the method determines whether the endpoint has been detected. If 516 is false, the method returns to 510. If 516 is true, the method continues at 518 and stops supplying the remote plasma (or extinguishes the plasma and turns off the plasma gas mixture). From 518, the method continues to 502.

[0083] Now refer to Figures 7A-7B , examples of markings are shown on structures arranged in the process chamber to facilitate detection of the endpoint of residual film removal. Figure 7A In the example, structure 480 includes one or more marks 494-1, 494-2, ..., and 494-Z, where Z is an integer greater than zero. In some examples, the marks can have different patterns, shades, colors, or other designs to improve accuracy during detection by a computer vision system. In some examples, structure 480 corresponds to the upper surface of a substrate support, such as Figure 7A In other examples, such as Figure 7B As shown, structure 480 corresponds to the side of the substrate support. It will be appreciated that other components such as gas distribution devices, supports, sidewalls, etc. may be labeled in a similar manner.

[0084] Now refer to Figure 8 , computer vision systems and / or learning models can be used to optimize process parameters, such as gas flow, gas type, gas composition, or other parameters. Optimization system 600 includes a controller 620, which includes a process optimization module 624, which includes a learning module 626. Controller 620 communicates with one or more processes 630-1, 630-2, ..., and 630-Y (where Y is an integer greater than zero). Each process includes a controller 638-1, 638-2, ..., and 638-Y, which includes a computer vision system 640-1, 640-2, ..., and 640-Y, respectively. In some examples, some of computer vision systems 640-1, 640-2, ..., and 640-Y may also include learning models 650-1, 650-2, ..., and 650-Y. Process optimization module 624 receives multiple training sets including process conditions and results from controllers 638-1, 638-2, ..., and 638-Y. The process optimization module 624 uses a learning model, neural network, or artificial intelligence implemented by the learning module 626 to optimize the process conditions for each of the controllers 638 - 1 , 638 - 2 , . . . , and 638 -Y.

[0085] The system and method for detecting the endpoint of residual film removal uses an inexpensive camera to identify features on the surface of one or more components in a process chamber to determine the cleanliness status of the process chamber. After sufficient training data, a neural network (deep learning) model is used to change cleaning process parameters (such as pressure, flow rate, susceptor position, etc.) to match the cleaning performance of different chambers.

[0086] The systems and methods of the present disclosure can be used to compare the performance of processes (e.g., cleaning processes, etching processes, deposition processes, etc.) in multiple process chambers in a single tool or several tools. Typically, process chambers used for specific processes (e.g., etching or deposition processes) have similar designs. Therefore, it is expected that the processes (e.g., cleaning, etching, deposition, etc.) performed in these process chambers have similar performance (e.g., similar run times). That is, two identical process chambers should perform the same process in the same way. In other words, the performance of the same process in two similarly designed process chambers should also be similar. When performing processes in these chambers, the systems and methods of the present disclosure can analyze data collected from similarly designed process chambers. The systems and methods can then determine, based on the analysis, whether the performance of the process is similar between these process chambers (i.e., whether the process chambers are matched and whether the process is performed in the same way).

[0087] Additionally, the analysis can help determine the performance of a process at the component level. For example, in the case of a cleaning process, the analysis can help determine whether the time it takes for the cleaning process to clean a particular component is the same across multiple similarly designed process chambers. This determination can be in addition to determining whether the total run time of the cleaning process is the same for each process chamber.

[0088] A similar analysis can be performed to compare the performance of other processes such as deposition and etching processes between multiple process chambers. Based on the comparison, any anomalies in the execution of the process in a particular chamber can be detected, and the cause of the anomaly can be corrected. For example, one process chamber in a tool that includes multiple process chambers may clean faster than the other process chambers in the tool. The cleaning process for that process chamber should be stopped as early as possible to prevent damage to the process chamber. If the cleaning process is continued, the process chamber may be damaged. However, if multiple process chambers of multiple tools exhibit different cleaning times, the different cleaning times of these process chambers may indicate that design changes to these process chambers are needed to achieve chamber matching. Similar analysis can be performed for other processes such as deposition and etching processes to achieve chamber matching.

[0089] The systems and methods of the present disclosure can be used to determine various performance criteria for processes such as deposition and etching processes. For example, performance criteria can include uniformity of etching across the wafer, uniformity of deposition across the wafer, uniformity of temperature across the wafer, and the like. For example, uniformity of film thickness can be determined during film deposition as well as film removal, as described below. Notably, the systems and methods can make these determinations in situ (i.e., without removing the wafer from the process chamber to a separate metrology chamber after processing to make these determinations) and in real time (i.e., while the process is being performed on the wafer).

[0090] For example, during the removal of a film from a wafer, the systems and methods can use techniques such as optical interferometry to observe the entirety of the film as it thins and determine whether the film has been completely removed, whether the removal is uniform across the entire wafer, and so on. For example, consider removing a copper oxide film from a wafer. Copper changes color when it oxidizes. Therefore, during the removal of the copper oxide, the systems and methods of the present disclosure can observe changes in the wavelength of light reflected from the entire wafer as the copper oxide is removed and pure copper is exposed. The change in wavelength can indicate the status of the copper oxide removal. Using optical filters, the systems and methods can observe changes locally on the wafer as well as across the entire wafer.

[0091] Without the ability to observe the entire wafer, only a single point on the wafer may be observed, and based on observing a single point on the wafer, an erroneous conclusion may be drawn regarding film removal from the entire wafer. For example, suppose only the center of the wafer is observed and it is determined that copper oxide is removed from the center. Without the ability to observe the entire wafer, even though some copper oxide at the edge of the wafer remains unremoved, an erroneous conclusion may be drawn that copper oxide has been removed from the entire wafer. In contrast, with the ability to observe the entire wafer, the systems and methods of the present disclosure can detect whether film removal from the center of the wafer is faster than film removal from the edge of the wafer, and can detect whether film removal from the entire wafer is complete. Furthermore, these determinations are made in situ.

[0092] In another example, when growing a film on a wafer, it typically takes time for the film to grow due to nucleation delays. Since the entire wafer can be observed, the systems and methods of the present disclosure can detect whether a film grows on one portion of the wafer before growing on another portion of the wafer. For example, a UV filter can be used to observe film growth (i.e., changes in film thickness due to growth) across the entire wafer. Additionally, an infrared filter can be used to observe the temperature of the wafer and changes therein. The two observations (film thickness and wafer temperature) made using two filters (UV filter and infrared filter) can be correlated to determine the uniformity of film growth across the wafer. Notably, this determination is made in real time in situ in the processing chamber without having to move the wafer to a separate metrology chamber.

[0093] In addition, the systems and methods of the present disclosure can monitor the edge of the wafer. For example, by focusing a camera on the top edge of the wafer, the systems and methods can determine whether the wafer has been processed (e.g., cleaned, etched, etc.) to the edge of the wafer. Again, this is done in situ, rather than after the wafer is moved to a separate metrology chamber. This ability to monitor the edge of the wafer while performing a process on the wafer can save processing time and material by immediately interrupting the process after determining that the process has reached the edge of the wafer based on observing the edge.

[0094] In addition, in some cases, deposition can be performed on both the top and bottom surfaces of the wafer. The systems and methods of the present disclosure can be used to observe deposition processes on both the top and bottom surfaces of the wafer. For example, a fiber optic probe and / or a microlens can be used in conjunction with the systems and methods of the present disclosure to observe a large area of the bottom of the wafer and obtain an image thereof. In some cases, one or more LEDs can be installed in the processing chamber to illuminate the bottom of the wafer. The captured image can be processed and analyzed to determine the uniformity of deposition across the bottom of the wafer. For example, the processed image can be correlated with the actual measured deposition level (which has been measured previously), and the correlation can then be used to infer the deposition level and uniformity in situ.

[0095] The systems and methods of the present disclosure can also be used to measure the gap between a showerhead and a pedestal in a process chamber. For example, two cameras can be focused on the showerhead and the pedestal, respectively, and the video signals from the two cameras can be used to determine the distance between the showerhead and the pedestal. The measurement results can then be used to control (change) the gap between the showerhead and the pedestal (e.g., by controlling a device that moves the pedestal relative to the showerhead).

[0096] Furthermore, in some process chambers, parasitic plasma can linger in the process chamber after the plasma is extinguished. Parasitic plasma is undesirable and difficult to detect. The camera of the disclosed system and method can be used to detect parasitic plasma. Many other applications of the disclosed system and method are contemplated and are within the scope of the present disclosure.

[0097] Figure 9A method 700 for chamber matching according to the present disclosure is shown. For example, only a cleaning process may be used. The teachings of method 700 may also be used with deposition or etching processes. At 702, method 700 begins a cleaning process to clean a plurality of chambers. At 704, method 700 collects data associated with cleaning the plurality of chambers. At 706, method 700 analyzes the collected data. At 708, method 700 determines whether the data from one of the plurality of chambers is abnormal. For example, method 700 determines whether one of the plurality of chambers has a shorter run time for the cleaning process than the remaining chambers in the plurality of chambers (i.e., cleans faster). At 710, if an abnormality is detected, method 700 determines one or more causes of the abnormality associated with one of the plurality of chambers. At 712, method 700 corrects the one or more causes of the abnormality. Thereafter, or if no abnormality is detected at 708, at 714, method 700 determines whether all chambers are clean or whether the cleaning process should continue (i.e., whether the cleaning process has not yet been completed). If all chambers have not been cleaned (ie, if the cleaning process cannot be terminated), method 700 returns to 702 .

[0098] Figure 10 A method 750 for matching process chambers at the component level according to the present disclosure is shown. Again, for example, only a cleaning process is used. The teachings of method 750 can also be used with deposition or etching processes. At 752, method 750 begins a cleaning process to clean a plurality of chambers. At 754, method 750 collects data associated with cleaning a plurality of chambers. At 756, method 750 analyzes the collected data. At 758, method 750 determines whether a component in one of the plurality of chambers is cleaned before the same component is cleaned in the other chambers (i.e., whether it is cleaned faster than the same component in the other chambers). At 760, if a component in one of the plurality of chambers is cleaned before the same component is cleaned in the other chambers (i.e., faster than the same component in the other chambers), method 750 stops the cleaning process in that chamber. Thereafter, if the components in one of the plurality of chambers are not cleaned before the same components are cleaned in the other chambers (i.e., not cleaned faster than the same components in the other chambers), then at 762, method 750 determines whether all chambers are clean or whether the cleaning process should continue (i.e., whether the cleaning process has not yet been completed). If all chambers have not yet been cleaned (i.e., if the cleaning process cannot yet be terminated), method 750 returns to 752.

[0099] Figure 11AA schematic diagram of a system 800 for determining the uniformity of a film deposited on a substrate according to the present disclosure is shown. The system 800 includes a processing chamber 112 that processes (e.g., deposits a material on) a substrate 118. The processing chamber 112 includes a window 172. The system 800 includes a controller 170 that includes a computer vision system 180, a camera 174, and a camera positioning device 182.

[0100] System 800 also includes an ultraviolet filter 806 and an infrared filter 808. Ultraviolet filter 806 and infrared filter 808 are disposed between camera 174 and window 172. Ultraviolet filter 806 filters wavelengths of ultraviolet light received from substrate 118 through window 172. Infrared filter 808 filters wavelengths of infrared light received from substrate 118 through window 172.

[0101] Computer vision system 180 receives the output of ultraviolet filter 806 and infrared filter 808. Computer vision system 180 determines the thickness of the deposited material at multiple locations on substrate 118 based on the output of ultraviolet filter 806. Computer vision system 180 determines the temperature at multiple locations on substrate 118 based on the output of infrared filter 808. Computer vision system 180 correlates the thickness and temperature determinations and determines the uniformity of deposition across substrate 118 based on the correlation.

[0102] Figure 11B A schematic diagram of a system 850 for determining whether a material is uniformly deposited on both the top and bottom of a substrate according to the present disclosure is shown. System 850 includes a processing chamber 999 that processes both the top and bottom sides of a substrate 804 (e.g., depositing material thereon, as indicated by arrows). Processing chamber 802 includes window 172. The details of depositing material on both sides of substrate 804 (e.g., using CVD) are not relevant to the present disclosure and are therefore not shown or described. System 850 includes a controller 170 that includes a computer vision system 180, a camera 174, and a camera positioning device 182.

[0103] The system 850 further includes an optical sensor 810 (eg, a fiber optic sensor or a microlens) to observe the bottom of the substrate 804. A sensor positioning device 812 positions the optical sensor 810 to point to different locations on the bottom of the substrate 804.

[0104] The computer vision system 180 focuses the camera 174 on the top of the substrate 804. The computer vision system 180 receives an image of the top of the substrate 804 from the camera 174. The computer vision system 180 positions the optical sensor 810 to view the bottom of the substrate 804. The computer vision system 180 receives an image of the bottom of the substrate 804 from the optical sensor 810. The computer vision system 180 processes the images received from the camera 174 and the optical sensor 810. The computer vision system 180 determines the uniformity of the deposition across the top and across the bottom of the substrate 804 based on the processing of the images received from the camera 174 and the optical sensor 810.

[0105] Figure 12 A method 900 for determining whether a process (e.g., cleaning, etching, deposition, etc.) performed on a component has been performed uniformly across the component is shown in accordance with the present disclosure. At 902, the method 900 filters one or more wavelengths of light received from a component (e.g., a wafer) through a window provided on a processing chamber in which the component is being processed. At 904, the method 900 determines a state of the component based on filtering using optical interference. At 906, the method 900 determines whether the process has been performed uniformly across the component based on the state of the component. At 908, if the process has been performed uniformly across the component, the method 900 terminates the process. If the process has not been performed uniformly across the component, the method 900 returns to 902.

[0106] Figure 13 A method 920 for determining whether a process (e.g., cleaning, etching, deposition, etc.) performed on a component has been performed to the edge of the component is shown in accordance with the present disclosure. At 922, the method 920 focuses a camera on the edge of a component (e.g., a wafer). At 924, the method 920 determines whether the process has completed to the edge of the component. At 926, if the process has completed to the edge of the component, the method 920 terminates the process. If the process has not completed to the edge of the component, the method 920 returns to 922.

[0107] Figure 14 A method 940 for determining the uniformity of a film deposited on a substrate according to the present disclosure is shown. At 942, the method 940 measures the thickness of the film across the substrate using an ultraviolet filter, as described in reference Figure 11A At 944, method 940 measures the temperature across the substrate using an infrared filter, as described in reference Figure 11AAt 946, method 940 correlates the thickness and temperature measurements. At 948, method 940 determines whether the film has been uniformly deposited across the substrate based on the measurements. At 950, if the film has been uniformly deposited across the substrate, method 940 terminates the deposition process. If the film has not been uniformly deposited across the substrate, method 940 returns to 942.

[0108] Figure 15 is a method 960 for determining whether a material is uniformly deposited on both the top and bottom of a substrate according to the present disclosure. At 962, the method 960 uses the method described in reference Figure 11B The camera observes the top of the substrate. At 964, method 960 uses the reference Figure 11B The one or more optical sensors observe the bottom of the substrate. At 966, method 960 determines whether the film is uniformly deposited on the top and bottom of the substrate, as shown in FIG. Figure 11B At 968, if the film has been uniformly deposited on the entire top and bottom of the substrate, the method 960 terminates the deposition process. If the film has not been uniformly deposited on the entire top and bottom of the substrate, the method 960 returns to 962.

[0109] The above methods are described separately for the sake of clarity only. One or more of the above methods can be combined in whole or in part and can be performed together.

[0110] The foregoing description is merely illustrative in nature and is not intended to limit the present disclosure, its application or use. The broad teachings of the present disclosure can be implemented in various forms. Therefore, although the present disclosure includes specific examples, the true scope of the present disclosure should not be so limited, because other modifications will become apparent when studying the drawings, description and appended claims. It should be understood that one or more steps in the method can be performed in a different order (or simultaneously) without changing the principles of the present disclosure. In addition, although each embodiment is described above as having certain features, any one or more of those features described with respect to any embodiment of the present disclosure can be implemented in the features of any other embodiment and / or combined with the features of any other embodiment, even if the combination is not explicitly described. In other words, the described embodiments are not mutually exclusive, and the permutation of one or more embodiments to each other remains within the scope of the present disclosure.

[0111] Various terms, including "connected," "engaged," "coupled," "adjacent," "near," "on," "above," "below," and "disposed," are used to describe spatial and functional relationships between elements (e.g., between modules, circuit elements, semiconductor layers, etc.). Unless explicitly described as "direct," when a relationship between a first and a second element is described in the above disclosure, the relationship can be a direct relationship in which no other intervening elements exist between the first and second elements, but can also be an indirect relationship in which one or more intervening elements exist (spatially or functionally) between the first and second elements. As used herein, the phrase "at least one of A, B, and C" should be construed to mean a logical (A or B or C), using a non-exclusive logical OR, and should not be construed to mean "at least one of A, at least one of B, and at least one of C."

[0112] In some implementations, the controller is part of a system, which can be part of the examples above. Such a system can include semiconductor processing equipment that includes one or more processing tools, one or more chambers, one or more platforms for processing, and / or specific processing components (wafer pedestals, gas flow systems, etc.). These systems can be integrated with electronic devices for controlling their operation before, during, and after processing of semiconductor wafers or substrates. The electronic device can be referred to as a "controller" that can control various components or subcomponents of one or more systems. Depending on the processing requirements and / or system type, the controller can be programmed to control any of the processes disclosed herein, including the delivery of process gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and operation settings, wafer transport in and out tools and other transport tools and / or load locks connected to or interfaced with a specific system.

[0113] Broadly speaking, a controller can be defined as an electronic device having various integrated circuits, logic, memory, and / or software that receive instructions, issue instructions, control operations, enable cleaning operations, enable endpoint measurements, and the like. The integrated circuits can include chips in the form of firmware that stores program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and / or one or more microprocessors or microcontrollers that execute program instructions (e.g., software). The program instructions can be instructions transmitted to the controller in the form of various individual settings (or program files) that define operating parameters for performing a particular process on a semiconductor wafer or for a semiconductor wafer or system. In some embodiments, the operating parameters can be part of a recipe defined by a process engineer to accomplish one or more process steps in the preparation of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or dies of a wafer.

[0114] In some implementations, the controller can be part of or coupled to a computer that is integrated with the system, coupled to the system, otherwise networked to the system, or a combination thereof. For example, the controller can be in the "cloud," or in all or part of a wafer fab host computer system, enabling remote access to wafer processing. The computer can enable remote access to the system to monitor the current progress of fabrication operations, study the history of past fabrication operations, study trends or performance metrics across multiple fabrication operations, change parameters of the current process, set processing steps after the current process, or start a new process. In some examples, a remote computer (e.g., a server) can provide process recipes to the system via a network (which can include a local network or the Internet). The remote computer can include a user interface that enables the input or programming of parameters and / or settings, which are then transmitted from the remote computer to the system. In some examples, the controller receives instructions in the form of data that specify parameters for each processing step to be performed during one or more operations. It should be understood that the parameters can be specific to the type of process to be performed and the type of tool interfaced with or controlled by the controller. Thus, as described above, the controller can be distributed, for example by including one or more discrete controllers networked together and working toward a common purpose (e.g., processing and control as described herein). An example of a distributed controller for such a purpose is one or more integrated circuits on a chamber communicating with one or more integrated circuits located remotely (e.g., at a platform level or as part of a remote computer), which combine to control processing on the chamber.

[0115] Example systems may include, but are not limited to, plasma etch chambers or modules, deposition chambers or modules, spin rinse chambers or modules, metal plating chambers or modules, cleaning chambers or modules, bevel edge etch chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etch (ALE) chambers or modules, ion implantation chambers or modules, track chambers or modules, and any other semiconductor processing system that may be associated with or used in the preparation and / or manufacture of semiconductor wafers.

[0116] As described above, depending on one or more process steps to be performed by the tool, the controller can communicate with one or more other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout the factory, a host computer, another controller, or tools used in material transport to transport wafer containers to and from tool locations and / or load ports in a semiconductor manufacturing facility.

Claims

1. A substrate processing system comprising: a camera mounted externally and adjacent a window of a processing chamber configured to process semiconductor substrates, the camera configured to observe components within the processing chamber through the window and generate video signals indicative of a status of the components during processing being performed within the processing chamber; and a controller coupled to the process chamber and configured to: controlling the camera; processing the video signal from the camera; determining a status of the component based on the processing of the video signal; as well as controlling the process based on the state of the component; a second controller coupled to a second processing chamber in which the same process is performed, the second controller being configured to control a second camera associated with the second processing chamber; and A third controller is configured to: analyzing data from the controller and the second controller; comparing the performance of the process in the process chamber with the performance of the process in the second process chamber based on the analyzed data; as well as Based on the comparison, it is determined whether the performance of the process in the process chamber matches the performance of the process in the second process chamber. 2 . The substrate processing system of claim 1 , wherein the controller is configured to determine whether to terminate the process based on the status of the component.

3. The substrate processing system according to claim 1, wherein: In response to the process being a cleaning process performed to remove material deposited on the component by a previously performed process, the controller is configured to: comparing a change in a property of a feature of the component observed across a plurality of frames of the video signal to a predetermined threshold; determining whether the material deposited on the component is removed based on the comparison; as well as In response to determining that the material deposited on the component is removed, the cleaning process is terminated.

4. The substrate processing system according to claim 1, wherein: In response to the process being a cleaning process performed to remove material deposited on the component by a previously performed process, the controller is configured to: comparing an image captured from the video signal with a predetermined image; determining whether the material deposited on the component is removed based on the comparison; as well as In response to determining that the material deposited on the component is removed, the cleaning process is terminated.

5. The substrate processing system according to claim 1 , wherein the controller is configured to: receiving data from one or more sensors in the processing chamber; generating a model based on the data received from the one or more sensors and a video signal received from the camera, the video signal indicating a state of the component when the process was previously performed in the processing chamber; as well as Use this model to: processing the video signal; determining a status of the component based on the processing of the video signal; as well as Based on the determined status of the component, it is determined whether to terminate the process.

6. The substrate processing system according to claim 1, wherein: The controller is configured to determine whether the process is performed on the entire component before terminating the process.

7. The substrate processing system according to claim 1, wherein: The controller is configured to determine whether the process is performed evenly across the component before terminating the process.

8. The substrate processing system of claim 1 , wherein the component comprises a semiconductor substrate, and the processing comprises a film removal process performed to remove a film from the semiconductor substrate, and wherein the controller is configured to determine whether the film on the entire component is removed before terminating the processing. 9 . The substrate processing system of claim 1 , wherein the controller is configured to focus the camera at an edge of the component and determine whether the processing is performed at the edge of the component before terminating the processing.

10. The substrate processing system of claim 1 , wherein the component comprises a semiconductor substrate and the process comprises a deposition process, the system further comprising: a first optical filter disposed between the camera and the window, the first optical filter configured to filter wavelengths of ultraviolet light received from the component through the window; and a second optical filter disposed between the camera and the window, the second optical filter configured to filter wavelengths of infrared light received from the component through the window; Wherein, the controller is configured as follows: determining a thickness of deposited material at a plurality of locations on the component based on an output of the first optical filter; determining a temperature at a plurality of locations on the component based on an output of the second optical filter; correlating said determination of said thickness with said determination of said temperature; and Deposition uniformity across the component is determined based on the correlation.

11. The substrate processing system of claim 1 , wherein the component comprises a semiconductor substrate and the process comprises a deposition process, the system further comprising: an optical sensor configured to observe the bottom of the component, The controller is configured to: focusing the camera on a top portion of the component; processing images received from the optical sensor and the camera; as well as Deposition uniformity across the top and across the bottom of the component is determined based on the processing of the images received from the optical sensor and the camera.

12. The system according to claim 1, wherein: In response to the process in the process chamber being completed earlier than the process in the second process chamber, the third controller is configured to terminate the process in the process chamber earlier than the process in the second process chamber.

13. A method for a substrate processing system, comprising: observing a component in the first process chamber through the window of the first process chamber using a first camera mounted outside and adjacent to the window; generating a video signal indicative of a status of the component during processing being performed within the first processing chamber; processing the video signal from the first camera; determining a status of a component based on said processing of said video signal; controlling the process based on the state of the component; controlling a second camera associated with a second processing chamber performing the same process; analyzing data from the first and second cameras; comparing a performance of the process in the first process chamber with a performance of the process in the second process chamber based on the analyzed data; and Based on the comparison, it is determined whether the performance of the process in the first process chamber matches the performance of the process in the second process chamber. 14 . The method of claim 13 , further comprising determining whether to terminate the process in the first process chamber based on the status of the component.

15. The method of claim 13 , further comprising, in response to the process being performed to remove material deposited on the component by a previously performed process, a cleaning process: comparing a change in a property of a feature of the component observed across a plurality of frames of the video signal to a predetermined threshold; determining whether the material deposited on the component is removed based on the comparison; as well as In response to determining that the material deposited on the component is removed, the cleaning process is terminated.

16. The method of claim 13, further comprising, in response to the process being performed to remove material deposited on the component by a previously performed process, a cleaning process: comparing an image captured from the video signal with a predetermined image; determining whether the material deposited on the component is removed based on the comparison; as well as In response to determining that the material deposited on the component is removed, the cleaning process is terminated.

17. The method according to claim 13, further comprising: receiving data from one or more sensors in the first processing chamber; generating a model based on the data received from one or more sensors and a video signal received from the first camera, the video signal indicating a state of the component when the process was previously performed in the first processing chamber; as well as Use this model to: processing the video signal; determining a status of the component based on the processing of the video signal; as well as Based on the determined status of the component, it is determined whether to terminate the process.

18. The method of claim 13, further comprising determining whether the process has been performed on the entire component before terminating the process.

19. The method of claim 13, further comprising determining whether the process is performed evenly across the component before terminating the process.

20. The method of claim 13, further comprising, in response to the component being a semiconductor substrate and the process being a film removal process performed to remove a film from the semiconductor substrate, determining whether a film on the entire component is removed before terminating the process.

21. The method of claim 13, further comprising focusing the first camera at an edge of the component and determining whether the processing is performed at the edge of the component before terminating the processing.

22. The method of claim 13, wherein the component comprises a semiconductor substrate and the process comprises a deposition process, the method further comprising: filtering wavelengths of ultraviolet light received from the component through the window using a first optical filter disposed between the first camera and the window; and filtering wavelengths of infrared light received from the component through the window using a second optical filter disposed between the first camera and the window; determining a thickness of deposited material at a plurality of locations on the component based on an output of the first optical filter; determining a temperature at a plurality of locations on the component based on an output of the second optical filter; correlating said determination of said thickness with said determination of said temperature; and Deposition uniformity across the component is determined based on the correlation.

23. The method of claim 13, wherein the component comprises a semiconductor substrate and the process comprises a deposition process, the method further comprising: observing a bottom of the component using an optical sensor; focusing the first camera on a top portion of the component; processing images received from the optical sensor and the first camera; as well as Deposition uniformity across the top portion and across the bottom portion of the component is determined based on the processing of the images received from the optical sensor and the first camera.

24. The method of claim 13, further comprising terminating the process in the first process chamber earlier than the process in the second process chamber in response to the process in the first process chamber being completed earlier than the process in the second process chamber.

25. A substrate processing system comprising: a camera mounted externally and adjacent to a window of a processing chamber configured to process a semiconductor substrate, the camera configured to observe components within the processing chamber through the window and to generate video signals indicative of a status of the components during a cleaning process being performed within the processing chamber to remove material deposited on the components by a process previously performed on the semiconductor substrate; and a controller coupled to the process chamber and configured to: controlling the camera; processing the video signal from the camera; determining a rate at which the cleaning process is performed at different locations on the component; comparing a change in a property of a feature of the component observed across a plurality of frames of the video signal to a predetermined threshold; determining whether the material deposited on the component is removed based on the comparison; as well as In response to determining that the material deposited on the component is removed, the cleaning process is terminated.

26. The substrate processing system of claim 25, further comprising: an optical filter disposed between the camera and the window, the optical filter configured to filter one or more wavelengths of light received from the component through the window and output a filtered signal to the camera, Wherein, the controller is configured as follows: determining a status of the component based on processing the filtered signal using optical interferometry; and Whether to terminate the process is determined based on the status of the component.

27. The substrate processing system of claim 25, wherein the controller is configured to: receiving data from one or more sensors in the processing chamber; generating a model based on the data received from the one or more sensors and a video signal received from the camera, the video signal indicating a state of the component when the process was previously performed in the processing chamber; as well as Use this model to: processing the video signal; determining the status of the component based on the processing of the video signal; as well as Based on the determined status of the component, it is determined whether to terminate the process.

28. The substrate processing system according to claim 25, wherein: The controller is configured to determine whether the process is performed on the entire component before terminating the process.

29. The substrate processing system according to claim 25, wherein: The controller is configured to determine whether the process is performed evenly across the component before terminating the process.

30. The substrate processing system of claim 25, wherein the component comprises a semiconductor substrate, and the processing comprises a film removal process performed to remove a film from the semiconductor substrate, and wherein the controller is configured to determine whether the film on the entire component is removed before terminating the processing.

31. The substrate processing system of claim 25, wherein the controller is configured to focus the camera at an edge of the component and determine whether the processing is performed at the edge of the component before terminating the processing.

32. The substrate processing system of claim 25, wherein the component comprises a semiconductor substrate and the process comprises a deposition process, the system further comprising: a first optical filter disposed between the camera and the window, the first optical filter configured to filter wavelengths of ultraviolet light received from the component through the window; and a second optical filter disposed between the camera and the window, the second optical filter configured to filter wavelengths of infrared light received from the component through the window; Wherein, the controller is configured as follows: determining a thickness of deposited material at a plurality of locations on the component based on an output of the first optical filter; determining a temperature at a plurality of locations on the component based on an output of the second optical filter; correlating said determination of said thickness with said determination of said temperature; and Deposition uniformity across the component is determined based on the correlation.

33. The substrate processing system of claim 25, wherein the component comprises a semiconductor substrate and the process comprises a deposition process, the system further comprising: an optical sensor configured to observe the bottom of the component, The controller is configured to: focusing the camera on a top portion of the component; processing images received from the optical sensor and the camera; as well as Deposition uniformity across the top and across the bottom of the component is determined based on the processing of the images received from the optical sensor and the camera.

34. The substrate processing system of claim 25, further comprising: a second controller coupled to a second processing chamber in which the same process is performed, the second controller being configured to control a second camera associated with the second processing chamber; and A third controller is configured to: analyzing data from the controller and the second controller; comparing the performance of the process in the process chamber with the performance of the process in the second process chamber based on the analyzed data; as well as Based on the comparison, it is determined whether the performance of the process in the process chamber matches the performance of the process in the second process chamber.

35. The substrate processing system of claim 25, further comprising: a second controller coupled to a second processing chamber in which the same process is performed on the same component, the second controller being configured to control a second camera associated with the second processing chamber; and A third controller is configured to: analyzing data from the controller and the second controller; comparing, based on the analyzed data, the performance of the process on the component in the process chamber with the performance of the process on the component in the second process chamber; as well as Based on the comparison, it is determined whether the performance of the process on the component in the process chamber matches the performance of the process on the component in the second process chamber.

36. The substrate processing system of claim 35, wherein: In response to the process in the process chamber being completed earlier than the process in the second process chamber, the third controller is configured to terminate the process in the process chamber earlier than the process in the second process chamber.

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