Wafer processing device
By using liftable support components and measuring components in the wafer processing device, the position of the support components is adjusted according to the level of the wafer surface, the problem of poor drying effect on the wafer edge in traditional drying technology is solved, and the yield of the wafer is improved.
Patent Information
- Application Number
- CN202510652834.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-05-20
- Publication Date
- 2025-08-12
AI Technical Summary
During semiconductor device manufacturing, traditional drying technology leads to poor drying effect in the edge area of the wafer, resulting in water mark defects or structural collapse, affecting chip yield.
A wafer processing device is designed, including a first support member that can be lifted and a measurement member, and the lifting and drop of the support member is adjusted by measuring the horizontality of the wafer surface to ensure that the level of the wafer is less than or equal to a preset threshold value, thereby optimizing the drying effect.
It improves the drying effect of the wafer edge area, avoids structural tilt, and improves the yield of the wafer.
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Figure CN120473411A_ABST
Abstract
Description
Technical Field
[0001] The present disclosure relates to the technical field of semiconductor device manufacturing, and in particular to a wafer processing device. Background Art
[0002] In the semiconductor device manufacturing process, semiconductor wet process (such as cleaning, etching) is one of the most commonly used processes. After the semiconductor wet process, the wafer often needs to be dried.
[0003] However, when using traditional drying technology to dry wafers, the drying effect of the edge area of the wafer is poor. If the drying process is not optimized, the direct consequence is the generation of water mark defects or structural collapse (Leaning Worse) on the wafer, which has a significant impact on the chip yield. Summary of the Invention
[0004] In view of this, an embodiment of the present disclosure provides a wafer processing device.
[0005] To achieve the above objectives, the technical solution of the present disclosure is implemented as follows:
[0006] An embodiment of the present disclosure provides a wafer processing device, comprising: a tray arranged in a first chamber; a plurality of first supporting components that can be raised and lowered relative to the tray, for supporting the wafers to be processed when the wafer processing device performs a drying operation; a measuring component for measuring the levelness of the upper surface of the wafer to be processed; and a control unit for driving the first supporting components to be raised and lowered relative to the tray based on the levelness of the upper surface of the wafer to be processed, so that the levelness of the wafer to be processed is less than or equal to a preset threshold.
[0007] In some embodiments, the tray includes a bottom and a side wall; the side wall includes a plurality of first through holes, and the bottom includes a plurality of second through holes; the first through holes penetrate the side wall in a horizontal direction, and the second through holes penetrate the bottom in a vertical direction; the second through holes are used to guide the processing fluid to the bottom of the wafer to be processed, and the first through holes are used to guide the processing fluid from the bottom of the wafer to be processed to the outside of the tray.
[0008] In some embodiments, the tray is used to accommodate the wafer to be processed when the wafer processing apparatus performs a drying operation, so that the sidewall portion surrounds the sidewall of the wafer to be processed.
[0009] In some embodiments, when the wafer processing apparatus performs a drying operation, along the vertical direction, the top of the first through hole is not higher than the top of the first supporting component.
[0010] In some embodiments, along the horizontal direction, a distance between the second through hole and the center of the bottom is smaller than a distance between the first supporting member and the center of the bottom.
[0011] In some embodiments, the measuring component is specifically used to measure the level of the isopropyl alcohol liquid film on the upper surface of the wafer to be processed; the control unit is specifically used to control the first supporting component to rise and fall on the tray according to the level of the isopropyl alcohol liquid film.
[0012] In some embodiments, the measuring component is further used to measure the thickness of the isopropyl alcohol liquid film.
[0013] In some embodiments, the wafer processing device further includes: a second supporting component that can be raised and lowered and passes through the tray; the second supporting component is used to transfer the wafer to be processed to the first supporting component or transfer the wafer to be processed away from the first supporting component.
[0014] In some embodiments, the second supporting component is used to weigh the wafer to be processed before a drying operation begins, and to weigh the wafer to be processed after a drying operation ends, to obtain a weight difference.
[0015] In some embodiments, the control unit is further configured to adjust at least one of the duration, rate, and concentration of the isopropyl alcohol gas sprayed by the nozzle according to the weight difference and / or the thickness of the isopropyl alcohol liquid film.
[0016] In some embodiments, the wafer processing device also includes: a pneumatic component connected to the first support component, the pneumatic component includes a gas pipeline and a lifting cylinder; wherein, the lifting cylinder is connected to the first support component through the gas pipeline, and is used to drive the first support component to rise and fall.
[0017] The embodiment of the present disclosure provides a wafer processing device, comprising: a tray arranged in a first chamber; a plurality of first support components that can be raised and lowered relative to the tray, for supporting the wafer to be processed when the wafer processing device performs a drying operation; a measuring component for measuring the levelness of the upper surface of the wafer to be processed; and a control unit for driving the first support components to be raised and lowered relative to the tray based on the levelness of the upper surface of the wafer to be processed, so that the levelness of the wafer to be processed is less than or equal to a preset threshold. In the embodiment of the present disclosure, the levelness of the upper surface of the wafer to be processed is measured by the measuring component, so that the control unit drives the first support components to be raised and lowered according to the levelness of the upper surface of the wafer to be processed, so that the levelness of the wafer to be processed is less than or equal to the preset threshold. In this way, when the wafer to be processed is dried, the drying effect of the edge area of the wafer to be processed can be optimized, the tilting of the structure on the edge area of the wafer can be avoided, and the yield of the wafer can be improved. BRIEF DESCRIPTION OF THE DRAWINGS
[0018] Figure 1 Schematic diagram of a wafer to be processed at different stages according to an embodiment of the present disclosure Figure 1 ;
[0019] Figure 2 Schematic diagram of a wafer to be processed at different stages according to an embodiment of the present disclosure Figure 2 ;
[0020] Figure 3 A schematic cross-sectional view of a wafer processing device carrying a wafer to be processed provided in one embodiment of the present disclosure;
[0021] Figure 4 A schematic top view of a tray and a first supporting member provided in one embodiment of the present disclosure;
[0022] Figure 5 A schematic cross-sectional view of a tray and a first supporting member provided in one embodiment of the present disclosure;
[0023] Figure 6 A cross-sectional view of a tray containing wafers to be processed according to an embodiment of the present disclosure;
[0024] Figure 7 A schematic cross-sectional view of a wafer to be processed according to an embodiment of the present disclosure;
[0025] Figure 8 A schematic diagram of a measurement position relative to the upper surface of a wafer to be processed provided in one embodiment of the present disclosure;
[0026] Figure 9 A partial cross-sectional view of a tray including a first supporting component and a pneumatic component provided in the first embodiment of the present disclosure. DETAILED DESCRIPTION
[0027] The following will clearly and completely describe the technical solutions in the embodiments of the present disclosure in conjunction with the embodiments of the present disclosure and the accompanying drawings. Obviously, the embodiments described are only part of the embodiments of the present disclosure, not all of the embodiments. Based on the embodiments of the present disclosure, all other embodiments obtained by ordinary technicians in this field without making any creative efforts are within the scope of protection of the present disclosure.
[0028] In the following description, numerous specific details are provided to provide a more thorough understanding of the present disclosure. However, it will be apparent to those skilled in the art that the present disclosure can be practiced without one or more of these details. In other instances, certain technical features known in the art are not described to avoid confusion with the present disclosure; that is, all features of actual embodiments are not described herein, nor are well-known functions and structures described in detail.
[0029] In the drawings, the sizes of layers, regions, elements and their relative sizes may be exaggerated for clarity. Like reference numerals denote like elements throughout.
[0030] It should be understood that when an element or layer is referred to as being "on, adjacent to, connected to, or coupled to" another element or layer, it may be directly on, adjacent to, connected to, or coupled to the other element or layer, or there may be intervening elements or layers. In contrast, when an element is referred to as being "directly on, directly adjacent to, directly connected to, or directly coupled to" another element or layer, there may be no intervening elements or layers. It should be understood that although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers, and / or parts, these elements, components, regions, layers, and / or parts should not be limited by these terms. These terms are merely used to distinguish one element, component, region, layer, or part from another element, component, region, layer, or part. Therefore, without departing from the teachings of the present disclosure, the first element, component, region, layer, or part discussed below may be represented as a second element, component, region, layer, or part. However, when the second element, component, region, layer, or part is discussed, it does not necessarily mean that the first element, component, region, layer, or part exists in the present disclosure.
[0031] Spatially relative terms such as "under," "beneath," "below," "under," "above," "above," etc., may be used herein for convenience of description to describe the relationship of an element or feature shown in the figures to other elements or features. It should be understood that in addition to the orientations shown in the figures, the spatially relative terms are intended to include different orientations of the device in use and operation. For example, if the device in the drawings is flipped, then the elements or features described as "under the other elements" or "under it" or "under it" will be oriented as "on" the other elements or features. Thus, the exemplary terms "under" and "under" may include both upper and lower orientations. The device may be oriented otherwise (rotated 90 degrees or in other orientations) and the spatial descriptors used herein are interpreted accordingly.
[0032] The purpose of the terms used herein is only to describe specific embodiments and is not intended to limit the present disclosure. When used herein, the singular forms "a", "an", and "the" are intended to include the plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "comprising" and / or "comprising", when used in this specification, determine the presence of the features, integers, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or groups. When used herein, the term "and / or" includes any and all combinations of the relevant listed items.
[0033] In order to fully understand the present disclosure, detailed steps and detailed structures will be presented in the following description to illustrate the technical solution of the present disclosure. The preferred embodiments of the present disclosure are described in detail below. However, in addition to these detailed descriptions, the present disclosure may also have other implementation methods.
[0034] After the semiconductor wet process, residual moisture on the wafer surface can cause the structure on the wafer to collapse or water stains to remain. When supercritical CO2 (processing fluid) is used directly to dry the moisture, it is difficult to completely remove the moisture due to the poor miscibility of CO2 and water.
[0035] Because IPA is highly miscible with water, a nozzle can be used to spray IPA gas onto the wafer surface, causing it to mix with the water on the wafer surface to form an IPA liquid film, or IPA-water mixture. Supercritical CO2 is then used in a supercritical chamber to displace the IPA liquid film on the wafer surface, achieving residue-free drying.
[0036] In addition, supercritical CO2 has a strong solubility for non-polar substances, but has limited solubility for polar substances (such as residual photoresist and organic pollutants). By adding a small amount of IPA as a co-solvent (5% to 10%), the polarity of supercritical CO2 can be significantly increased, enhancing the removal effect of polar pollutants.
[0037] Figure 1 Schematic diagram of a wafer to be processed at different stages according to an embodiment of the present disclosure Figure 1 See also Figure 1 , Figure 1 Figure (a) is a schematic diagram of the wafer to be processed before drying. Due to the poor leveling of the wafer to be processed, the thickness of the isopropyl alcohol (IPA) liquid film on the surface of the wafer to be processed is uneven. When the wafer to be processed is dried, the drying rates of different areas on the surface of the wafer to be processed are different. Therefore, after drying, the following will appear: Figure 1 The problem of structural collapse at the edge of the wafer to be processed shown in Figure (b) affects the yield of the chip.
[0038] Figure 2 Schematic diagram of a wafer to be processed at different stages according to an embodiment of the present disclosure Figure 2 See also Figure 2 , Figure 2 Figure (a) is a schematic diagram of a wafer with good levelness before drying. Figure 2Figure (b) is a schematic diagram of the wafer to be processed during the drying process. Since the processing fluid flows to the edge of the wafer to be processed, the drying rate of the edge area of the wafer to be processed is greater than the drying rate of other areas. As a result, the IPA liquid film on the edge area of the wafer to be processed has been replaced by the processing fluid, while the IPA liquid film on other areas of the wafer to be processed has not been completely replaced by the processing fluid, resulting in the following phenomenon: Figure 2 The problem of structural collapse at the edge of the wafer to be processed, as shown in Figure (c), affects the chip yield.
[0039] In view of this, in order to solve at least one of the above problems, an embodiment of the present disclosure provides a wafer processing device.
[0040] It should be noted that, for ease of description, various directions that may be used in the following description are first defined. A vertical direction (Z direction) is defined in a plane perpendicular to the tray, and a horizontal direction (for example, an intersecting X direction and Y direction) is defined in a plane parallel to the tray. The X direction, Y direction, and Z direction may be perpendicular to each other. In addition, in the embodiment of the present disclosure, Figures 3 to 7 as well as Figure 9 The same reference numerals are used in the figures, and reference numerals not shown can refer to other figures.
[0041] Figure 3 A schematic cross-sectional view of a wafer processing apparatus carrying a wafer to be processed according to an embodiment of the present disclosure. Figure 3 The wafer processing device includes: a tray 10 arranged in a first chamber; a plurality of first support components 20 that can be raised and lowered relative to the tray 10, used to support the wafers W to be processed when the wafer processing device performs a drying operation; a measuring component 30, used to measure the levelness of the upper surface of the wafer W to be processed; and a control unit, used to drive the first support components 20 to rise and fall relative to the tray 10 based on the levelness of the upper surface of the wafer W to be processed, so that the levelness of the wafer W to be processed is less than or equal to a preset threshold.
[0042] In some embodiments, after the wafer W to be processed is placed on the first support member 20, the measurement member 30 measures the levelness of the upper surface of the wafer W to be processed. The control unit is configured to determine, based on the levelness of the upper surface of the wafer W to be processed, the amplitude by which the first support member 20 should be raised or lowered relative to the tray 10 when the levelness of the wafer W to be processed is less than or equal to a preset threshold, and to drive the first support member 20 to rise or fall relative to the tray 10 according to the determined amplitude. After the levelness of the wafer W to be processed is less than or equal to the preset threshold, a processing fluid may be injected into the first chamber to dry the wafer W to be processed.
[0043] Levelness is a measure of the deviation of a plane, axis, or object from an ideal horizontal plane (a plane perpendicular to gravity). The preset threshold for wafer levelness can be set to 0.02mm / m, 0.005mm / m, or 0.001mm / m, depending on the required accuracy of the pattern on the wafer.
[0044] In the embodiment of the present disclosure, the horizontality of the upper surface of the wafer to be processed is measured by a measuring component, so that the control unit drives the first supporting component to rise and fall according to the horizontality of the upper surface of the wafer to be processed, so that the horizontality of the wafer to be processed is less than or equal to a preset threshold value. In this way, when the wafer to be processed is dried, the drying effect of the edge area of the wafer to be processed can be optimized, the tilting of the structure on the edge area of the wafer can be avoided, and the yield of the wafer can be improved.
[0045] Figure 4 This is a top view of a tray and a first supporting member provided in one embodiment of the present disclosure. Figure 4 , multiple first support components 20 are distributed at equal distances along the circumference of the tray 10, and the control unit can independently drive each first support component 20 to rise and fall relative to the tray 10, so as to drive the wafer W to be processed to rise and fall, so that the horizontality of the wafer W to be processed is less than or equal to a preset threshold.
[0046] It should be noted that the equidistant distribution involved in the present disclosure may be uniform distribution at substantially equal distances.
[0047] In some embodiments, the number of the first support members 20 in the present disclosure may be 6 to 24. The greater the number of the first support members 20, the higher the precision with which the control unit adjusts the levelness of the wafer W to be processed. Furthermore, the present disclosure does not impose any specific limitation on the number of the first support members.
[0048] Figure 5 This is a cross-sectional schematic diagram of a tray and a first supporting member provided in one embodiment of the present disclosure. Figure 4 and Figure 5 In some embodiments, the tray 10 includes a bottom 11 and a side wall 12; the side wall 12 includes a plurality of first through holes 13, and the bottom 11 includes a plurality of second through holes 14; the first through holes 13 pass through the side wall in a horizontal direction, and the second through holes 14 pass through the bottom 11 in a vertical direction; the second through holes 14 are used to guide the processing fluid to the bottom of the wafer to be processed, and the first through holes 13 are used to guide the processing fluid from the bottom of the wafer to be processed to the outside of the tray 10.
[0049] In some embodiments, the first chamber can be connected to an air intake device, which is used to introduce a processing fluid into the first chamber when the wafer processing device performs a drying operation. The second through hole 14 guides the processing fluid to the bottom of the wafer W to be processed, and the processing fluid flows along the bottom of the wafer W to be processed to the first through hole 13. The first through hole 13 guides the processing fluid to the outside of the tray 10, and then the processing fluid flows to the area above the wafer W to be processed to dry the moisture on the upper surface of the wafer W to be processed.
[0050] In some embodiments, the first chamber can also be connected to an exhaust device to exhaust the gas in the first chamber when the wafer processing device performs a drying operation, to prevent the air pressure in the first chamber from being too high and causing damage to the wafer to be processed, to prevent the processing fluid from flowing back, and to avoid residual contaminants.
[0051] The exhaust device is also used to discharge the gas in the first chamber after the drying operation is completed, so that the air pressure in the first chamber tends to be consistent with the external air pressure, thereby avoiding the rapid drop in air pressure in the first chamber when the first chamber is opened during subsequent processing, which may cause damage to the wafer processing device and the wafer to be processed.
[0052] In some embodiments, during the drying process, the processing fluid may liquefy, resulting in residual liquid in the first chamber. Therefore, the first chamber may be further connected to a drainage device for draining the residual liquid in the first chamber after the drying process is completed to keep the first chamber clean.
[0053] In some embodiments, the bottom portion 11 is circular in the horizontal direction, and the radius of the bottom portion 11 is 0 to 3 mm larger than the radius of the wafer W to be processed. For example, the radius of the bottom portion 11 is 1 mm, 1.5 mm, 2 mm, 2.5 mm, or 3 mm larger than the radius of the wafer W to be processed. For example, if the wafer W to be processed is a 6-inch wafer, that is, the radius of the wafer W to be processed is 150 mm, then the radius of the bottom portion 11 may be 150 mm to 153 mm.
[0054] In some embodiments, adjacent first through holes 13 are equally spaced on a horizontal plane to evenly guide the processing fluid at the bottom of the wafer W to be processed out of the tray. It should be noted that the present disclosure does not impose any specific restrictions on the number and shape of the first through holes.
[0055] See also Figure 4 The bottom 11 may include two circles of second through holes 14 and a second through hole 14 located at the center of the bottom 11, wherein each circle of second through holes 14 is arranged at equal distances along the circumference of the bottom 11, and the distribution radius of the second through holes 14 in different circles is different. Figure 4 As shown, two circles of second through holes 14 are radially aligned and radially arranged. It should be noted that the present disclosure does not impose any specific restrictions on the number and shape of the second through holes.
[0056] In some embodiments, the bottom portion may include multiple circles of second through holes, each circle of second through holes being equally spaced along the circumference of the bottom portion. The second through holes in different circles have different distribution radii. The second through holes in each circle may be radially aligned with or staggered with the second through holes in adjacent circles. It is understood that the multiple second through holes are evenly distributed in the bottom portion.
[0057] Figure 6 A cross-sectional view of a tray containing wafers to be processed according to an embodiment of the present disclosure. Figure 6 Along the Z direction, the height H1 of the first through hole 13 is 3 mm to 10 mm, for example, 4 mm, 6 mm or 8 mm.
[0058] In some embodiments, the tray 10 is used to accommodate the wafers W to be processed when the wafer processing apparatus performs a drying operation, such that the sidewall portion 12 surrounds the sidewalls of the wafers W to be processed.
[0059] In some embodiments, when the wafer processing device performs a drying operation, the side wall portion 12 surrounds the side wall of the wafer to be processed W, and at the same time, the first through hole 13 guides the processing fluid from the bottom of the wafer to be processed W to the outside of the tray 10, which can prevent the processing fluid from flowing through the side wall of the wafer to be processed W, so that the drying rates of the edge area and other areas on the upper surface of the wafer to be processed are basically the same, avoiding the problem of the structure on the wafer to be processed collapsing due to different drying rates in different areas, and can improve the yield of the chip.
[0060] In some embodiments, see Figure 6 When the wafer processing apparatus performs a drying operation, a height difference H2 between the top of the side wall portion and the top of the wafer W to be processed along the Z direction may be -0.5 mm to 10 mm, for example, 0 mm, 1 mm, 2 mm, 3 mm, 4 mm, 5 mm, 6 mm, 7 mm, 8 mm, or 9 mm.
[0061] It should be noted that, for the convenience of description, Figure 6 The IPA liquid film is not shown on the wafer W to be processed, but in fact, an IPA liquid film is provided on the wafer W to be processed.
[0062] In some embodiments, when the wafer to be processed is transferred to the first support member and the drying process has not yet begun, the top of the sidewall portion is no lower than the top of the IPA liquid film along the Z direction. In this case, the sidewall portion can better protect the sidewall of the wafer to be processed W and prevent the processing fluid from flowing through the sidewall of the wafer to be processed W.
[0063] In some embodiments, when the wafer processing apparatus performs a drying operation, the top of the first through hole 13 is not higher than the top of the first supporting member 20 along the vertical direction.
[0064] See also Figure 5 When the wafer processing device performs a drying operation, along the Z direction, the top of the first through hole 13 is no higher than the top of the first supporting component 20, which can prevent the processing fluid from flowing through the side wall of the wafer to be processed W, and avoid the problem of the structure on the wafer to be processed collapsing due to different drying rates in different areas, thereby improving the yield of the chip.
[0065] See also Figure 6 When the wafer processing apparatus performs a drying operation, along the Z direction, a height difference H3 between the top of the first supporting member 20 and the top of the first through hole 13 may be 2 mm to 10 mm, for example, 4 mm, 6 mm, or 8 mm.
[0066] In some embodiments, along the horizontal direction, the distance between the second through hole 14 and the center of the bottom 11 is smaller than the distance between the first supporting member 20 and the center of the bottom 11 .
[0067] In some embodiments, along the horizontal direction, the first support members 20 are distributed on the periphery relative to the bottom 11, and the second through holes 14 are distributed on the periphery relative to the bottom 11. In other words, the distance between the second through holes 14 and the sidewall portion 12 is greater than the distance between the first support members 20 and the sidewall portion 12.
[0068] In some embodiments, the greater the distance between the first support member 20 and the center of the bottom 11 along the horizontal direction, the more accurately the control unit drives the first support member 20 to rise and fall relative to the tray 10, that is, the lower the control cost.
[0069] Figure 7 A schematic cross-sectional view of a wafer to be processed according to an embodiment of the present disclosure. Figure 7 , the wafer to be processed includes a chamfered area A1 and a horizontal area A2. In the horizontal direction, the width of the horizontal area A2 is 2d1, and the size of the first support component 20 is d3, so the distance between the first support component 20 and the center of the bottom 11 is less than or equal to d1-d3. It can be understood that when the wafer processing device performs a drying operation, if the distance between the first support component 20 and the center of the bottom 11 is less than or equal to d1-d3, the first support component 20 can be avoided from being located at the bottom of the chamfered area A1 of the wafer to be processed. The first support component 20 is located at the bottom of the horizontal area A2 of the wafer to be processed, so that the first support component 20 can have better stability when supporting the wafer to be processed.
[0070] In some embodiments, if the radius of the wafer to be processed is R mm, the horizontal distance between the first support member 20 and the center of the bottom 11 is greater than (R-3) mm or greater than (R-5) mm. In a specific example, if the wafer to be processed is a 6-inch wafer, the horizontal distance between the first support member 20 and the center of the bottom 11 can be 120 mm to 145 mm.
[0071] In some embodiments, the measuring component is specifically used to measure the level of the isopropyl alcohol (IPA) liquid film on the upper surface of the wafer to be processed; the control unit is specifically used to control the first supporting component to rise and fall on the tray according to the level of the IPA liquid film.
[0072] Figure 8 A schematic diagram of a measurement position relative to the upper surface of a wafer to be processed provided in one embodiment of the present disclosure. Figure 8 Since the periphery of the wafer to be processed can more accurately reflect the horizontality, the first measuring positions P1 can be distributed at equal distances along the circumference relative to the periphery of the wafer to be processed. The measuring component is used to measure the distance between the IPA liquid film and the measuring component at multiple first measuring positions P1, and the horizontality of the IPA liquid film is confirmed based on the distance between the IPA liquid film and the measuring component at different first measuring positions P1. In this way, the control unit can control the first support component to rise and fall on the tray based on the horizontality of the IPA liquid film. In a specific embodiment, the projection of the first measuring position P1 on the horizontal plane can overlap with the projection of the first support component on the horizontal plane. In this way, the control unit can drive the first support component corresponding to each first measuring position P1 to rise and fall relative to the tray based on the distance between the IPA liquid film at each first measuring position P1 and the measuring component.
[0073] In some embodiments, the measuring component is further used to measure the thickness of the IPA liquid film.
[0074] See also Figure 8 Because the thickness of the IPA film at the inner periphery and center of the wafer being processed is largely unaffected by the wafer's levelness, the second measurement positions P2 can be equidistantly spaced relative to the inner periphery of the wafer being processed, and / or located at the center of the wafer being processed. The measurement component can measure the thickness of the IPA film at multiple second measurement positions P2, and the average of the thicknesses at these different second measurement positions is used as the overall thickness of the IPA film on the wafer surface being processed.
[0075] In some embodiments, the measurement component can be used to measure the thickness of the IPA liquid film after the levelness of the wafer to be processed is less than or equal to a preset threshold, so as to further improve the accuracy of the measurement result.
[0076] In some embodiments, the thickness of the IPA liquid film is 100 μm to 260 μm, such as 150 μm or 200 μm.
[0077] In some embodiments, see Figure 1 The wafer processing device further includes: a second support component 40 that can be raised and lowered and passes through the tray 10; the second support component 40 is used to transfer the wafer W to be processed to the first support component 20 or transfer the wafer W to be processed away from the first support component 20.
[0078] In some embodiments, the second supporting member 40 is used to weigh the wafer W to be processed before the drying process begins, and to weigh the wafer W to be processed after the drying process ends, to obtain a weight difference.
[0079] In some embodiments, the second supporting member 40 may include a weight sensor to weigh the wafer W to be processed before the drying process begins and to weigh the wafer W to be processed after the drying process ends.
[0080] In some embodiments, the second support component 40 may include three pins 41, and the pins 41 pass through the tray 10 through the second through holes. Before the pins 41 carry the wafer W to be processed, the top of the pins 41 is higher than the top of the side wall along the Z direction. The wafer W to be processed can be transferred to the second support component 40 by a robotic arm so that the pins 41 carry the wafer W to be processed. At this time, the second support component 40 can weigh the wafer to be processed to determine the weight M1 of the wafer W to be processed and the IPA liquid film. Then the second support component 40 gradually descends to transfer the wafer W to be processed to the first support component 20, and the second support component 40 is moved to the outside of the tray to avoid affecting the subsequent drying operation. In a specific embodiment, the figure obtained by connecting the three second through holes for inserting the pins 41 can be an equilateral triangle.
[0081] In some embodiments, after the drying process is completed, the pin 41 can pass through the second through-hole of the tray 10 to transfer the wafer W to be processed away from the first support member 20 until the top of the pin 41 is higher than the top of the sidewall along the Z direction. At this point, the second support member 40 can weigh the wafer to be processed to determine the weight M2 of the dried wafer W to be processed. The wafer W to be processed can be transferred from the second support member 40 by a robotic arm. Based on M1 and M2, the weight of the IPA liquid film can be obtained as (M1-M2).
[0082] In some embodiments, the control unit is further configured to adjust at least one of the duration, rate, and concentration of the isopropyl alcohol gas sprayed by the nozzle according to the weight difference and / or the thickness of the IPA liquid film.
[0083] In some embodiments, in related art, in order to achieve a uniform drying effect, an excessive amount of IPA liquid film is often formed on the wafer to be processed, but this affects the time and efficiency of the drying operation. In order to achieve a uniform drying effect while reducing the drying time and improving the drying efficiency, the control unit can reduce at least one of the time, rate, and concentration of the isopropyl alcohol gas sprayed by the nozzle onto the surface of other wafers to be processed based on the weight difference and / or the thickness of the IPA liquid film, thereby reducing the thickness / weight of the IPA liquid film on the surface of other wafers to be processed. This can save the amount of IPA gas used, reduce the time of the drying operation, and reduce the generation of pollutants after drying.
[0084] In other embodiments, when there is too little IPA liquid film on the wafer to be processed, it may cause surface tension problems, uneven drying, and capillary effect on the wafer to be processed. Therefore, in order to achieve a uniform drying effect while reducing the drying time and improving the drying efficiency, the control unit can increase at least one of the duration, rate, and concentration of the isopropyl alcohol gas sprayed by the nozzle onto the surface of other wafers to be processed, thereby increasing the thickness / weight of the IPA liquid film on the surface of other wafers to be processed to solve the above problems.
[0085] Figure 9 A partial cross-sectional view of a tray including a first support component and a pneumatic component provided in the first embodiment of the present disclosure. Figure 9 In some embodiments, the wafer processing device further includes: a pneumatic component 50 connected to the first support component 20, the pneumatic component 50 including a gas pipeline 51 and a lifting cylinder 52; wherein the lifting cylinder 52 is connected to the first support component 20 through the gas pipeline 51, and is used to drive the first support component 20 to rise and fall.
[0086] See also Figure 9 The lifting cylinder 52 is used to supply gas to the gas pipeline 51 to drive the first support component 20 to rise, and the lifting cylinder 52 is also used to exhaust the gas in the gas pipeline 51 to drive the first support component 20 to fall. The number of pneumatic components is the same as the number of first support components.
[0087] It should be noted that the present disclosure does not limit the lifting method of the first support component. The first support component can also be driven to rise and fall by methods other than pneumatic components, for example, by a stepper motor.
[0088] The embodiment of the present disclosure provides a wafer processing device, comprising: a tray arranged in a first chamber; a plurality of first support components that can be raised and lowered relative to the tray, for supporting the wafer to be processed when the wafer processing device performs a drying operation; a measuring component for measuring the levelness of the upper surface of the wafer to be processed; and a control unit for driving the first support components to be raised and lowered relative to the tray based on the levelness of the upper surface of the wafer to be processed, so that the levelness of the wafer to be processed is less than or equal to a preset threshold. In the embodiment of the present disclosure, the levelness of the upper surface of the wafer to be processed is measured by the measuring component, so that the control unit drives the first support components to be raised and lowered according to the levelness of the upper surface of the wafer to be processed, so that the levelness of the wafer to be processed is less than or equal to the preset threshold. In this way, when the wafer to be processed is dried, the drying effect of the edge area of the wafer to be processed can be optimized, the tilting of the structure on the edge area of the wafer can be avoided, and the yield of the wafer can be improved.
[0089] It should be understood that “one embodiment” or “an embodiment” mentioned throughout the specification means that specific features, structures or characteristics related to the embodiment are included in at least one embodiment of the present disclosure. Therefore, “in one embodiment” or “in an embodiment” appearing throughout the specification does not necessarily refer to the same embodiment. In addition, these specific features, structures or characteristics can be combined in one or more embodiments in any suitable manner. It should be understood that in the various embodiments of the present disclosure, the size of the serial numbers of the above-mentioned processes does not mean the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of the present disclosure. The serial numbers of the embodiments of the present disclosure are for description only and do not represent the advantages and disadvantages of the embodiments.
[0090] The above description is only a preferred embodiment of the present disclosure and does not limit the patent scope of the present disclosure. All equivalent structural transformations made by using the contents of the present disclosure and the drawings under the inventive concept of the present disclosure, or direct / indirect application in other related technical fields are included in the patent protection scope of the present disclosure.
Claims
1. A wafer processing device, characterized in that: include: a tray disposed within the first chamber; a plurality of first supporting members that can be raised and lowered relative to the tray, and are used to support the wafers to be processed when the wafer processing device performs a drying operation; A measuring component, used for measuring the levelness of the upper surface of the wafer to be processed; The control unit is used to drive the first supporting component to move up and down relative to the tray based on the levelness of the upper surface of the wafer to be processed, so that the levelness of the wafer to be processed is less than or equal to a preset threshold.
2. The wafer processing device according to claim 1, wherein: The tray includes a bottom portion and a side wall portion; The side wall portion includes a plurality of first through holes, and the bottom portion includes a plurality of second through holes; the first through holes penetrate the side wall portion in a horizontal direction, and the second through holes penetrate the bottom portion in a vertical direction; the second through holes are used to guide the processing fluid to the bottom of the wafer to be processed, and the first through holes are used to guide the processing fluid from the bottom of the wafer to be processed to the outside of the tray.
3. The wafer processing device according to claim 2, wherein: The tray is used to accommodate the wafer to be processed when the wafer processing device performs a drying operation, so that the side wall portion surrounds the side wall of the wafer to be processed.
4. The wafer processing device according to claim 2, wherein: When the wafer processing apparatus performs a drying operation, along the vertical direction, the top of the first through hole is not higher than the top of the first supporting component.
5. The wafer processing device according to claim 2, wherein: Along the horizontal direction, a distance between the second through hole and the center of the bottom is smaller than a distance between the first supporting member and the center of the bottom.
6. The wafer processing device according to claim 1, wherein: The measuring component is specifically used to measure the level of the isopropyl alcohol liquid film on the upper surface of the wafer to be processed; The control unit is specifically configured to control the first supporting component to rise and fall on the tray according to the level of the isopropyl alcohol liquid film.
7. The wafer processing device according to claim 6, wherein: The measuring component is also used to measure the thickness of the isopropyl alcohol liquid film.
8. The wafer processing device according to claim 7, wherein: Also includes: a second supporting member that is liftable and extends through the tray; The second supporting component is used to transfer the wafer to be processed onto the first supporting component or to transfer the wafer to be processed away from the first supporting component.
9. The wafer processing device according to claim 8, wherein: The second supporting component is used to weigh the wafer to be processed before the drying operation begins, and to weigh the wafer to be processed after the drying operation ends, so as to obtain a weight difference.
10. The wafer processing device according to claim 9, wherein: The control unit is further configured to adjust at least one of the duration, rate, and concentration of the isopropyl alcohol gas sprayed by the nozzle according to the weight difference and / or the thickness of the isopropyl alcohol liquid film.
11. The wafer processing apparatus according to claim 1, wherein: Also includes: A pneumatic component connected to the first supporting component, the pneumatic component including an air pipeline and a lifting cylinder; wherein, The lifting cylinder is connected to the first supporting component through the air pipeline, and is used to drive the first supporting component to move up and down.