An IPM module lead frame

Abstract

The present application relates to an IPM module lead frame, which relates to the field of lead frame technology and includes: a base island, the base island being used to connect a bare chip and provide mechanical support for the bare chip; a conductive substrate, the conductive substrate being arranged in the base island, the front surface of the conductive substrate being used as a welding surface for welding with the bare chip; pins, the pins being connected to the substrate so as to form a path between the pins and the bare chip; a material guide trough, the material guide trough being arranged on the welding surface of the conductive substrate, the material guide trough being arranged on the flow path of the solder flowing from the welding area to the edge of the conductive substrate, and being capable of receiving the solder and guiding the solder to flow along the extension direction of the material guide trough. The present application effectively prevents the solder from overflowing to the back surface of the conductive substrate, improves the production qualification rate of the IPM module, reduces the waste of resources, and has better economic performance.

Description

Technical Field

[0001] The present application relates to the technical field of lead frames, and in particular to an IPM module lead frame. Background Art

[0002] Intelligent power modules (IPMs) utilize IGBTs (insulated-gate bipolar transistors) as power switching devices. They combine the advantages of GTRs (high-power transistors)—high current density, low saturation voltage, and high-voltage resistance—with the high input impedance, high switching frequency, and low drive power of MOSFETs (field-effect transistors). IPMs integrate logic, control, detection, and protection circuits for ease of use, reducing system size and development time while significantly enhancing system reliability. These IPMs align with current trends in power device development—modularization, integration, and power integrated circuits (PICs)—and are finding increasing application in the power electronics field.

[0003] In an IPM module leadframe, multiple islands are provided, which provide mechanical fixation, electrical connections, and heat dissipation for the bare chip. In the prior art patent application CN115346973A, the switch unit is directly soldered to the front surface of the conductive layer using solder paste A. In actual production, when soldering the chip body, such as the switch unit, to the conductive layer, more solder is often used than necessary to avoid creating gaps in the soldering area between the chip body and the conductive layer. This can cause excess solder to overflow onto the back surface of the conductive layer, making the back surface uneven and resulting in substandard molding during the injection molding process. This can lead to the scrapping of the IPM module and reduce the production yield of IPM modules. Summary of the Invention

[0004] In order to improve the problem that excess solder overflows to the back side of the conductive layer, causing the IPM module to be scrapped and the production qualification rate of the IPM module to be reduced, the present application provides an IPM module lead frame.

[0005] The IPM module lead frame provided in this application adopts the following technical solution:

[0006] An IPM module lead frame, comprising:

[0007] A base island, the base island being used to connect the bare chip and provide mechanical support for the bare chip;

[0008] A conductive substrate, wherein the conductive substrate is disposed in the base island, and the front surface of the conductive substrate serves as a welding surface for welding with the bare chip;

[0009] Pins, the pins are connected to the conductive substrate to form a path with the bare chip;

[0010] The material guide groove is arranged on the welding surface of the conductive substrate. The material guide groove is arranged on the flow path of the solder flowing from the welding area to the edge of the conductive substrate, and can receive the solder and guide the solder to flow along the extension direction of the material guide groove.

[0011] By adopting the above technical solution, in the process of soldering the bare chip to the conductive substrate, the material guide groove blocks the excess solder flowing from the welding area to the edge of the conductive substrate, and the solder flows into the material guide groove and flows along the material guide groove, thereby effectively preventing the solder from overflowing to the back side of the conductive substrate and causing the IPM module to be scrapped, thereby improving the production qualification rate of the IPM module, reducing the waste of resources, and being more economical.

[0012] Preferably, the material guide trough is provided along at least one circle outside the welding area on the welding surface.

[0013] By adopting the above technical solution and using the material guide trough arranged along the 360-degree circumference of the welding area, the excess solder flowing from the welding area to the edge of the conductive substrate can be more effectively blocked, so that the excess solder can fully flow into the material guide trough, further avoiding the solder overflowing to the back of the conductive substrate, thereby improving the prevention and control effect of the IPM module scrapping.

[0014] Preferably, the material guide trough is provided along a circle outside the welding area on the welding surface, and the end portions of the material guide trough are connected to form a closed structure.

[0015] By adopting the above technical solution and utilizing the closed structure of the material guide trough, the solder flowing into the material guide trough from any position can flow along the direction of the material guide trough, and can block the excess solder flowing from the welding area to the edge of the conductive substrate in all directions, thereby improving the blocking effect of the material guide trough on the flow of solder.

[0016] Preferably, the back side of the conductive substrate is a heat dissipation surface, which can be exposed to the plastic package body. The heat generated by the bare chip can be guided to the heat dissipation surface through the conductive substrate and then dissipated to the outside through the heat dissipation surface.

[0017] By adopting the above technical solution, the back side of the conductive substrate is directly used as the heat dissipation surface. The conductive substrate serves as a heat sink and the heat dissipation surface can be exposed to the plastic package body. The heat generated by the bare chip can be guided to the heat dissipation surface and dissipated outward, which is beneficial to the heat dissipation of the bare chip.

[0018] Preferably, the conductive substrate is provided with a connection surface capable of contacting the plastic package body, and the connection surface is provided with a sealing groove for filling with the injection plastic of the plastic package body.

[0019] By adopting the above technical solution, the sealing groove is filled with the injection plastic of the plastic package body, which increases the connection area between the conductive substrate and the plastic package body, makes the connection between the conductive substrate and the plastic package body tighter, enhances the stability of the structure, and at the same time increases the airtightness between the conductive substrate and the plastic package body, which can prevent impurities, water vapor, etc. from entering the connection part between the conductive substrate and the plastic package body, thereby improving the reliability of the IPM module lead frame.

[0020] Preferably, the sealing groove is located at the connection between the heat dissipation surface and the connection surface, and extends to the heat dissipation surface.

[0021] By adopting this technical solution, the sealing groove is located at the junction of the heat dissipation surface and the connection surface and extends to the heat dissipation surface. This allows the injection molding compound of the plastic encapsulation body to better fill the sealing groove, enhancing the tightness of the connection between the conductive substrate and the plastic encapsulation body. Furthermore, the provision of the sealing groove removes burrs at the corners of the conductive substrate, preventing the occurrence of gaps between the conductive substrate and the injection molding body caused by burrs, thereby improving the sealing of the connection between the conductive substrate and the injection molding body.

[0022] Preferably, the pins are connected to the conductive substrate via a connecting portion, and a supporting structure is provided on the connecting portion. The supporting structure can form a tensile support for the pins together with the plastic package body.

[0023] By adopting the above technical solution, the pins are connected to the conductive substrate through the connecting part. The supporting structure on the connecting part can form a tensile support for the pins with the plastic package body, thereby enhancing the stability of the pins. It can prevent the pins from loosening between the injection molded body due to tension when bending, thereby ensuring the reliability of the electrical connection of the IPM module lead frame and helping to improve the quality and service life of the IPM module.

[0024] Preferably, it also includes a support bar, part of which can be inserted into the plastic packaging body to form support for the plastic packaging body, and the support bar is provided with a support hole for filling with the injection plastic of the plastic packaging body, and a thinning groove is provided on the part of the support bar extending out of the plastic packaging body so that the support bar can be cut through the thinning groove.

[0025] By adopting the above technical solution, when unitizing the IPM module, the support bars support the plastic encapsulation, preventing lead breakage during cutting and improving the quality of the IPM module unitized cutting. When cutting the support bars, the cutting tool can cut along the thinning grooves. The thinning grooves can reduce the cutting thickness of the cutting tool, improving the convenience of cutting the support bars, and at the same time, reducing wear on the cutting tool and increasing the service life of the cutting tool.

[0026] Preferably, a plurality of conductors are provided on the heat dissipation surface, the plurality of conductors are arranged at intervals, and a heat dissipation channel is formed between two adjacent conductors. An insulating heat-conducting layer is provided on the conductors, and the conductors can electrostatically adsorb impurities in the air onto the insulating heat-conducting layer.

[0027] By adopting the above technical solution, spaced conductors are arranged on the heat dissipation surface to form heat dissipation channels, enhancing heat dissipation capabilities. Air enters the heat dissipation channels and exchanges heat with the heat dissipation surface. During this process, the conductors electrostatically absorb impurities in the air entering the heat dissipation channels and exchanging heat with the heat dissipation surface, reducing the impurities from adhering to the heat dissipation surface and affecting heat dissipation, further improving heat dissipation efficiency. Impurities are adsorbed onto the insulating thermally conductive layer, preventing direct contact between the impurities and the conductors, which would otherwise increase the resistance of the conductive substrate and heat generation, thereby improving the heat dissipation effect of the IPM module.

[0028] Preferably, a communication hole is provided on the conductor, so that two adjacent heat dissipation channels are connected through the communication hole.

[0029] By adopting the above technical solution, two adjacent heat dissipation channels are connected through a connecting hole, so that the air in the heat dissipation channels can flow between each other, increasing the turbulence of the air in the heat dissipation channels and improving the heat dissipation effect of the IPM module.

[0030] In summary, this application includes at least one of the following beneficial technical effects:

[0031] 1. When soldering the bare chip to the conductive substrate, the guide trough can block excess solder flowing from the soldering area to the edge of the conductive substrate, guiding the solder to flow along the guide trough, preventing the solder from overflowing to the back of the conductive substrate. This prevents injection molding failures due to uneven back surfaces, which can lead to scrapping of the IPM module and improve the production qualification rate of IPM modules.

[0032] 2. Avoiding the scrapping of IPM modules can reduce the waste of resources and achieve better economic efficiency;

[0033] 3. The heat dissipation surface of the conductive substrate can be exposed to the plastic package, which can guide the heat generated by the bare chip to the heat dissipation surface and dissipate the heat outward, which is beneficial to the heat dissipation of the bare chip. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Figure 1 This is a schematic diagram of the structure of the five lead frames arranged on the support frame of the present application.

[0035] Figure 2 This is a structural diagram of an IPM module lead frame according to Example 1 of the present application.

[0036] Figure 3 yes Figure 2Enlarged view of part A in the middle.

[0037] Figure 4 It is a schematic diagram for showing the structure of a conductive substrate.

[0038] Figure 5 yes Figure 4 Cross-sectional view along line BB.

[0039] Figure 6 yes Figure 2 Enlarged view of part C in the middle.

[0040] Figure 7 It is a partial longitudinal cross-sectional view of the connecting portion of Example 1 of the present application.

[0041] Figure 8 It is a partial longitudinal cross-sectional view of the connecting portion of Example 2 of the present application.

[0042] Figure 9 This is a top view of the back side of the conductive substrate of Example 3 of the present application.

[0043] Figure 10 It is along Figure 9 Cross-sectional view along the DD line.

[0044] Explanation of the accompanying drawings: 1. Support frame; 11. Connecting rib; 12. Support bar; 13. Support hole; 14. Thinning groove; 2. Base island; 21. First base island; 22. Second base island; 23. Third base island; 3. Conductive substrate; 31. Welding area; 32. Heat dissipation surface; 33. Connecting surface; 34. Sealing groove; 4. Pin; 41. Connecting part; 42. Support structure; 421. Protrusion; 422. Filling hole; 423. Filling groove; 5. Material guide groove; 6. Injection molding area; 71. Conductor; 72. Heat dissipation channel; 73. Connecting hole; 74. Arc surface; 75. Insulating thermal conductive layer. DETAILED DESCRIPTION

[0045] The following is combined with Figure 1-10 This application is described in further detail.

[0046] An embodiment of the present application discloses an IPM module lead frame.

[0047] Example 1

[0048] Reference Figure 1 、 Figure 2An IPM module lead frame includes a base island 2, a conductive substrate 3, pins 4, and a material guide trough 5. This embodiment uses an IPM module produced using a DIP (dual in-line package) as an example. Several lead frames are arranged on a support frame 1. This embodiment uses five lead frames as an example. The five lead frames on the support frame 1 are made from a single copper plate through stamping and shearing. The number of base islands 2 in a single lead frame can be customized as needed. In this embodiment, there are three base islands 2. The conductive substrate 3 is located within the first base island 21. The second base island 22 is used to house a power module. The third base island 23 is used to house a microprocessor CPU and memory. A switch unit can be located on the front of the conductive substrate 3, thereby integrating microprocessor computing, power supply, and high-voltage control functions into the IPM module.

[0049] In this embodiment, there are 25 pins 4, divided into several areas. Each pin 4 connects to the modules within the first base island 21, the second base island 22, and the third base island 23, forming a pathway. The 25 pins 4 are connected to the support frame 1 via connecting ribs 11, and each pin 4 is integrally connected to the support frame 1.

[0050] Reference Figure 2 、 Figure 3 The support frame 1 is integrated with four support bars 12 in each lead frame. The support bars 12 are evenly divided into two groups and are relatively arranged on both sides of the injection molding area 6 on the lead frame. A support hole 13 is opened at the free end of each support bar 12. The free end of the support bar 12 can be inserted into the injection molding body formed by the injection molding area 6, and the injection plastic can be filled into the support hole 13, thereby increasing the connection strength between the support bar 12 and the injection molding body.

[0051] A thinning groove 14 is provided on the support bar 12. The cross-section of the thinning groove 14 is arc-shaped and is arranged along the width direction of the support bar 12. The thinning groove 14 is located outside the injection molding area 6. After the injection molding of the injection molding body on the support frame 1 is completed, the lead frame needs to be cut off from the support frame 1. The specific method is: first cut off the end of the pin 4 and the connection point of the support frame 1 and the connecting rib 11 between the pins 4, and then cut off the support bar 12 to achieve the separation of the lead frame and the support frame 1.

[0052] When cutting the pins 4, the support provided by the support strips 12 to the plastic package prevents the pins 4 from breaking during cutting, thereby improving the quality of the IPM module unit cutting. When cutting the support strips 12, the cutting tool can cut along the thinning grooves 14. The provision of the thinning grooves 14 can reduce the cutting thickness of the cutting tool, improve the convenience of cutting the support strips 12, and reduce the wear of the cutting tool, thereby increasing the service life of the cutting tool.

[0053] Reference Figure 4 The bare chip in the power module is soldered in the soldering area 31 on the soldering surface of the front side of the conductive substrate 3. The soldering method of the bare chip is as follows: solder powder is applied in the soldering area 31, the solder powder is heated to form molten solder, and then the bare chip is soldered to the conductive substrate 3.

[0054] Reference Figure 4 、 Figure 5 The material guide trough 5 is machined on the soldering surface of the conductive substrate 3 through an etching process and is located between the soldering area 31 and the edge of the conductive substrate 3. This ensures that the material guide trough 5 is located along the flow path of the solder from the soldering area 31 to the edge of the conductive substrate 3. The material guide trough 5 is arranged in a circle along the circumference of the soldering area 31, and the end-to-end connection of the material guide trough 5 forms a closed structure, which achieves full blocking of the solder in the soldering area 31. This can more effectively block excess solder flowing from the soldering area 31 to the edge of the conductive substrate 3, allowing the excess solder to fully flow into the material guide trough 5, further preventing solder from overflowing onto the back of the conductive substrate 3, and improving the prevention and control of IPM module scrapping.

[0055] Reference Figure 4 、 Figure 5 The back of the conductive substrate 3 is configured as a heat dissipation surface 32, and the side surface connecting the front and back of the conductive substrate 3 is configured as a connection surface 33. When the injection molding area 6 is injection-molded to form the molded body, the heat dissipation surface 32 is exposed from the molded body. This allows heat generated by the switch module to be transferred from the conductive substrate 3 to the heat dissipation surface 32, and then dissipated outward from the heat dissipation surface 32, which facilitates heat dissipation of the bare chip. To ensure the insulation and sealing of the conductive substrate 3, a thermally conductive silicone layer is applied to the area of ​​the conductive substrate 3 exposed from the molded body. This ensures heat dissipation from the conductive substrate 3 while improving the insulation and sealing between the conductive substrate 3 and the external connection, thereby enhancing the stability of the IPM module against environmental interference.

[0056] Reference Figure 4 、 Figure 5A sealing groove 34 is provided at the connection between the connection surface 33 and the heat dissipation surface 32. The sealing groove 34 is located on the connection surface 33 and the heat dissipation surface 32, so that the connection surface 33 and the heat dissipation surface 32 are connected through the groove wall of the sealing groove 34. The groove wall cross-section of the sealing groove 34 is "L"-shaped with arc transition at the corners. The sealing groove 34 is arranged along the circumference of the conductive substrate 3. When the injection molding body is injection-molded, the injection plastic is filled into the sealing groove 34. The sealing groove 34 is filled with the injection plastic of the plastic package, which increases the connection area between the conductive substrate 3 and the plastic package, making the connection between the conductive substrate 3 and the plastic package tighter, enhancing the stability of the structure, and at the same time increasing the airtightness between the conductive substrate 3 and the plastic package, preventing impurities, water vapor, etc. from entering the connection between the conductive substrate 3 and the plastic package, thereby improving the reliability of the IPM module lead frame. At the same time, the provision of the sealing groove 34 can remove burrs at the corners of the conductive substrate 3, avoid the occurrence of gaps between the conductive substrate 3 and the injection molded body due to burrs, and improve the sealing performance of the connection between the conductive substrate 3 and the injection molded body.

[0057] Reference Figure 2 、 Figure 6 The pin 4 is connected to the corresponding base island 2 through a connecting portion 41, and a supporting structure 42 is provided on the connecting portion 41. The supporting structure 42 in this embodiment includes but is not limited to a combination of one or more of a protrusion 421, a filling hole 422 and a filling groove 423.

[0058] Reference Figure 6 、 Figure 7 , a filling groove 423 is provided on each pin 4 and is provided along the width direction of the connecting portion 41. In this embodiment, the filling groove 423 is provided on one surface of the connecting portion 41, and the number is one. For some pins 4 whose positions are misaligned with the corresponding base island 2 connection points, the corresponding connecting portion 41 adopts a corner design to increase the connection strength between the pin 4 and the injection molded body. For some pins 4 that are opposite to the corresponding base island 2 connection points, the connecting portion 41 bulges outwardly toward the side of the pin 4 to form a protrusion 421, and a support point is formed between the protrusion 421 and the injection molded body. The filling hole 422 is located on a portion of the connecting portion 41, and the injection plastic of the injection molded body is filled into the filling hole 422.

[0059] The raised portion 421, the filling hole 422, the filling groove 423 and the corner setting on the connecting portion 41 can form a tensile support for the pin 4 together with the plastic package body, thereby enhancing the stability of the pin 4 and preventing the pin 4 from loosening due to tension when bending. This ensures the reliability of the electrical connection of the IPM module lead frame and is beneficial to improving the quality and service life of the IPM module.

[0060] The implementation principle of Example 1 is as follows: The IPM module lead frame achieves effective connection and support for the bare chip, as well as conduction with the external circuit, by rationally setting structures such as the base island 2, the conductive substrate 3, the pins 4, and the material guide groove 5. The setting of the material guide groove 5 avoids the problem of solder overflow and improves the production qualification rate of the product. The design of structures such as the heat dissipation surface 32, the sealing groove 34, the support structure 42, and the support bar 12 further enhances the heat dissipation performance, protection performance, and reliability of the product. Compared with the existing technology, the IPM module lead frame has significant improvements and upgrades in production qualification rate, performance, and functionality, and is highly practical and economical.

[0061] Example 2

[0062] Reference Figure 8 The difference between this embodiment and embodiment 1 is that in this embodiment, there are two filling grooves 423, and the two filling grooves 423 are arranged on the front and back sides of the connecting portion 41, and the two filling grooves 423 are arranged at intervals along the length direction of the connecting portion 41, thereby reducing the impact of the setting of the filling grooves 423 on the strength of the connecting portion 41.

[0063] Example 3

[0064] Reference Figure 9 、 Figure 10 The difference between this embodiment and embodiment 1 is that the thickness of the conductive substrate 3 in this embodiment is reduced, and a plurality of long strip-shaped conductors 71 are integrally provided on the heat dissipation surface 32. The plurality of conductors 71 are evenly spaced on the conductive substrate 3, and a heat dissipation channel 72 is formed between two adjacent conductors 71. A plurality of connecting holes 73 are opened on the conductor 71, so that two adjacent heat dissipation channels 72 are connected to each other.

[0065] Reference Figure 9 、 Figure 10 The heat exchange surface is concave in the area between two adjacent conductors 71 to form an arc-shaped surface 74, and the conductors 71 and the heat exchange surface are covered with an insulating heat-conducting layer 75.

[0066] The insulating heat-conducting layer 75 in this embodiment is an epoxy-organic silicon hybrid / boron nitride (BN) coating, and its composition is:

[0067] Components Proportion Processing requirements Epoxy-silicone hybrid resin 100 copies Preheat to 50°C (to reduce viscosity) Boron nitride (BN) sheet 40 servings Aspect ratio>200, surface modified with KH-550 silane coupling agent Solvent (xylene / butyl ketone) 20 servings Dynamic viscosity adjusted to 800–1200 cP <![CDATA[Thixotropic agent (fumed SiO2)]]> 2 servings Prevent sagging Antistatic agent (PANI) 0.5 serving Polyaniline nanofibers antioxidants 1 serving Nanoscale (<100nm), improved thermal stability at 180°C

[0068] The coating process is:

[0069] S1, surface pretreatment, degreasing, roughening, alkaline cleaning, rinsing, drying, spraying primer on the surfaces of the conductor 71 and the heat dissipation surface 32, and pretreatment of the surfaces of the conductor 71 and the heat dissipation surface 32.

[0070] S2. Coating construction: Five minutes before spraying, a magnetic field is turned on the conductive substrate 3 through a permanent magnet array, and a magnetic field strength of 1.5-2T is applied to the vertical magnetic field. The conductive substrate 3 is heated to 75°C-85°C and sprayed by high-pressure airless spraying. The spraying distance is 20-25cm, the wet film thickness formed by spraying is 150μm, the flash drying time is 10min, and the dry film thickness is about 100μm.

[0071] S3, step curing

[0072] The epoxy-silicone hybrid / boron nitride (BN) coating is cured through four stages: gelation, aging, final curing, and annealing.

[0073] The insulating thermally conductive layer 75 on top of the conductor 71 is flush with the surface of the molded body formed by the injection molding area 6. Multiple conductors 71 are provided on the heat dissipation surface 32. Conductors 71 and the conductive substrate 3 are made of the same material. This reduces the volume and resistance of the conductive substrate 3, thereby reducing the heat generated by the conductive substrate 3. Furthermore, the provision of the conductors 71 increases the heat dissipation surface 32 on the back of the conductive substrate 3, thereby improving the heat dissipation efficiency of the chip.

[0074] When conductive substrate 3 is energized, an electrostatic field forms around conductor 71, electrostatically attracting impurity particles in the air entering heat dissipation channel 72 to insulating thermally conductive layer 75. This effectively prevents impurities from being attracted to insulating thermally conductive layer 75 on heat dissipation surface 32, minimizing the impact of impurities on chip heat dissipation. Connecting heat dissipation channel 72 through connecting hole 73 increases the turbulence of the air within heat dissipation channel 72, thereby improving the heat dissipation efficiency of conductive substrate 3.

[0075] The working principle of Example 2 is as follows: Conductors 71 are arranged at intervals on the heat dissipation surface 32 to form heat dissipation channels 72, which enhance heat dissipation. Air enters the heat dissipation channels 72 and exchanges heat with the heat dissipation surface 32. During this process, the conductors 71 electrostatically absorb impurities in the air entering the heat dissipation channels 72 and exchanging heat with the heat dissipation surface 32, reducing the impurities from adhering to the heat dissipation surface 32 and affecting heat dissipation, further improving heat dissipation efficiency. Impurities are adsorbed onto the insulating thermally conductive layer 75, preventing them from directly contacting the conductors 71, which would otherwise increase the resistance of the conductive substrate 3 and heat generation, thereby improving the heat dissipation of the IPM module.

[0076] The above are all preferred embodiments of the present application, and are not intended to limit the scope of protection of the present application. Therefore, any equivalent changes made based on the structure, shape, and principle of the present application should be included in the scope of protection of the present application.

Claims

1. An IPM module lead frame, characterized in that: include: A base island (2), the base island (2) is used to connect the bare chip and provide mechanical support for the bare chip; A conductive substrate (3), the conductive substrate (3) being arranged in the base island (2), the front surface of the conductive substrate (3) serving as a welding surface for welding with a bare chip; A pin (4), the pin (4) being connected to the conductive substrate (3) so as to form a path with the bare chip; A material guide groove (5), the material guide groove (5) being arranged on the welding surface of the conductive substrate (3), the material guide groove (5) being arranged on a flow path of the solder flowing from the welding area (31) to the edge of the conductive substrate (3), and being capable of receiving the solder and guiding the solder to flow along the extension direction of the material guide groove (5); The back side of the conductive substrate (3) is a heat dissipation surface (32), and the heat dissipation surface (32) can be exposed from the plastic package body. Heat generated by the bare chip can be guided to the heat dissipation surface (32) through the conductive substrate (3), and then dissipated to the outside through the heat dissipation surface (32); A plurality of conductors (71) are provided on the heat dissipation surface (32), the plurality of conductors (71) are arranged at intervals, and a heat dissipation channel (72) is formed between two adjacent conductors (71). An insulating heat-conducting layer (75) is provided on the conductors (71), and the conductors (71) can electrostatically adsorb impurities in the air onto the insulating heat-conducting layer (75).

2. The IPM module lead frame according to claim 1, wherein: The material guide trough (5) is provided along at least one circle outside the welding area (31) on the welding surface.

3. The IPM module lead frame according to claim 2, wherein: The material guide trough (5) is arranged in a circle outside the welding area (31) on the welding surface, and the end portions of the material guide trough (5) are connected to form a closed structure.

4. The IPM module lead frame according to claim 1, wherein: The conductive substrate (3) is provided with a connection surface (33) capable of contacting the plastic package body, and the connection surface (33) is provided with a sealing groove (34) for filling with the injection plastic of the plastic package body.

5. The IPM module lead frame according to claim 4, wherein: The sealing groove (34) is located at the connection between the heat dissipation surface (32) and the connection surface (33), and extends onto the heat dissipation surface (32).

6. The IPM module lead frame according to claim 1, wherein: The pin (4) is connected to the conductive substrate (3) via a connecting portion (41), and a supporting structure (42) is provided on the connecting portion (41). The supporting structure (42) can form a tensile support for the pin (4) together with the plastic package body.

7. The IPM module lead frame according to claim 1, wherein: The invention also includes a support bar (12), a portion of which can be inserted into the plastic package body to form support for the plastic package body, and a support hole (13) is provided on the support bar (12) for filling with the injection plastic of the plastic package body, and a thinning groove (14) is provided on the portion of the support bar (12) extending out of the plastic package body so that the support bar (12) can be cut through the thinning groove (14).

8. The IPM module lead frame according to claim 1, wherein: A communication hole (73) is provided on the conductor (71), so that two adjacent heat dissipation channels (72) are connected through the communication hole (73).

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