Resin composition for sealing electronic device and electronic device manufactured using the same

Abstract

A resin composition for sealing an electronic device according to an embodiment of the present invention contains a biphenyl-type epoxy compound, a biphenyl-arane-type epoxy compound, and an inorganic filler containing alumina particles surface-treated with a silane agent containing an alkyl group having 7 or more carbon atoms. The weight ratio of the biphenyl-type compound to the biphenyl-arane-type compound in the epoxy compound is 1: 1.4 to 1: 4.5.

Description

Technical Field

[0001] The present invention relates to a resin composition for sealing electronic devices and an electronic device manufactured using the same. More particularly, the present invention relates to a resin composition for sealing electronic devices comprising an epoxy resin and an additive, and an electronic device manufactured using the same. Background Art

[0002] Integrated circuit (IC) chips including semiconductor devices are surface mounted on circuit boards using, for example, bumps, solder, or ball grid arrays (BGAs). Semiconductor devices may be sealed or packaged on circuit boards using epoxy molding compound (EMC)-based resins.

[0003] Recently, as the integration degree of semiconductor devices increases and the size decreases, there is a demand for the use of sealing resin compositions having improved moldability and curing properties.

[0004] For example, an IC chip may be mounted on a BGA substrate, and the EMC composition may be used to fill a gap between the IC chip and the BGA substrate to secure the IC chip.

[0005] As the gap decreases, an EMC composition having a sufficient flow length is required. In addition, the EMC composition may need heat dissipation properties that can sufficiently dissipate heat generated during operation of the semiconductor device to the outside.

[0006] Furthermore, the EMC composition requires thermal stability to provide sufficient resistance to heat generated by semiconductor devices and stable chip attach performance.

[0007] For example, Korean Patent Publication No. 10-2340610 discloses an epoxy molding resin composition containing an inorganic filler, but the composition cannot provide sufficient moldability and thermal properties suitable for highly integrated semiconductor packaging. Summary of the Invention

[0008] [Technical Purpose]

[0009] An object of the present invention is to provide a resin composition for sealing electronic devices having improved mechanical properties and thermal stability.

[0010] An object of the present invention is to provide an electronic device manufactured by using a resin composition for sealing an electronic device.

[0011] [Technical means]

[0012] 1. A resin composition for sealing electronic devices, comprising: a biphenyl-type epoxy compound and a biphenyl-aralkyl-type epoxy compound; an inorganic filler comprising aluminum oxide particles surface-treated with a silane agent, wherein the silane agent comprises an alkyl group having 7 or more carbon atoms, wherein the weight ratio of the biphenyl-type compound to the biphenyl-aralkyl-type compound in the epoxy compound is 1.4 to 4.5.

[0013] 2. The resin composition for sealing electronic devices according to 1 above, wherein the inorganic filler further comprises aluminum oxide particles that have not been treated with silane.

[0014] 3. The resin composition for sealing electronic devices according to 1 above, wherein, in the inorganic filler, the amount of the aluminum oxide particles not treated with silane is greater than the amount of the aluminum oxide particles surface-treated with the silane agent.

[0015] 4. The resin composition for sealing electronic devices according to 1 above, wherein the alkyl group contained in the silane agent has 8 to 20 carbon atoms.

[0016] 5. The resin composition for sealing electronic devices according to 1 above, wherein the biphenyl-type epoxy compound is represented by the following Chemical Formula 1:

[0017] [Chemical Formula 1]

[0018]

[0019] (In Chemical Formula 1, R1, R2, R3 and R4 are each independently hydrogen or an alkyl group having 1 to 5 carbon atoms).

[0020] 6. According to the resin composition for sealing electronic devices described in 1 above, the biphenyl-aralkyl type epoxy compound is represented by Chemical Formula 2:

[0021] [Chemical Formula 2]

[0022]

[0023] (In Chemical Formula 2, R4 and R5 are each an alkylene group having 1 to 5 carbon atoms, R7 is hydrogen or an alkyl group having 1 to 5 carbon atoms, and n is an integer of 1 to 10).

[0024] 7. The resin composition for sealing electronic devices according to 1 above, further comprising a curing agent and a curing catalyst, wherein the curing agent comprises a phenol-based resin or a linear phenolic resin.

[0025] 8. The resin composition for sealing electronic devices according to 7 above, wherein the content of the curing catalyst is 0.01 to 0.5 wt % based on the total weight of the composition.

[0026] 9. The resin composition for sealing electronic devices according to 1 above, wherein the content of the inorganic filler is 85 to 95 wt % based on the total weight of the composition.

[0027] 10. The resin composition for sealing electronic devices according to 1 above, wherein, in the epoxy compound, a weight ratio of the biphenyl type compound to the biphenyl-aralkyl type compound is 1.5 to 4.

[0028] 11. An electronic device comprising a sealant formed from the resin composition for sealing an electronic device.

[0029] 12. The electronic device according to 11 above, further comprising a circuit board and a semiconductor chip mounted on the circuit board, wherein the sealant fills a space between the circuit board and the semiconductor chip.

[0030] [Technical Effects of the Invention]

[0031] The resin composition for sealing electronic devices according to an embodiment of the present invention may include aluminum oxide particles surface-treated with a silane agent as an inorganic filler. This increases the dispersibility of the inorganic filler in the composition, thereby achieving uniform heat dissipation. Furthermore, by controlling the number of carbon atoms in the silane agent, the flowability or flow length of the composition can be improved.

[0032] Therefore, a stable seal can be formed in a micro semiconductor package, and the amount of a composition used to form the seal material can be reduced.

[0033] According to an embodiment of the present invention, the flow length of the composition may be further increased by controlling the ratio of the biphenyl type compound and the biphenyl-aralkyl type compound contained in the epoxy compound.

[0034] The resin composition for sealing electronic devices can be used as a sealing resin for highly integrated semiconductor packages to improve the mounting reliability of fine-sized integrated circuit chips. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] Figure 1 is a schematic cross-sectional view showing a semiconductor package using the resin composition for sealing an electronic device according to an embodiment. DETAILED DESCRIPTION

[0036] According to an embodiment of the present invention, a resin composition for sealing an electronic device comprising an epoxy compound and an inorganic filler is provided. In addition, according to an embodiment of the present invention, an electronic device using the resin composition for sealing an electronic device is provided.

[0037] <Resin composition for sealing electronic devices>

[0038] The resin composition for sealing an electronic device according to an embodiment (hereinafter referred to as the resin composition) may include an epoxy-based compound and an inorganic filler, and may further include a curing agent and a catalyst, and may further include additives.

[0039] As used herein, the term "resin composition" is intended to encompass all instances where a resin is directly included in the composition or the composition is cured to form a resin.

[0040] <Epoxy compounds>

[0041] The epoxy compound can be used to form a base resin or binder resin that provides thermosetting properties to the resin composition. The epoxy compound can be crosslinked or cured to form an electronic device encapsulant containing the epoxy resin.

[0042] The epoxy compound may include a biphenyl type epoxy compound and a biphenyl-aralkyl type epoxy compound.

[0043] According to exemplary embodiments, the biphenyl type epoxy compound may be represented by the following Chemical Formula 1.

[0044] [Chemical Formula 1]

[0045]

[0046] In Chemical Formula 1, R1, R2, R3, and R4 may each independently be hydrogen or an alkyl group having 1 to 5 carbon atoms.

[0047] In an embodiment, in Chemical Formula 1, R1, R2, R3, and R4 may each be a methyl group.

[0048] The biphenyl-aralkyl type epoxy compound may refer to an epoxy compound in which an alkylene group is bonded to both ends of the para position of a biphenyl group.

[0049] In exemplary embodiments, the biphenyl-aralkyl type epoxy compound may be represented by Chemical Formula 2.

[0050] [Chemical Formula 2]

[0051]

[0052] In Chemical Formula 2, R4 and R5 may each be an alkylene group having 1 to 5 carbon atoms, and R7 may be hydrogen or an alkyl group having 1 to 5 carbon atoms.

[0053] n is an integer of 1-50, preferably 1-30, 1-20 or 1-10.

[0054] In an embodiment, R4 and R5 may each be a methylene group (-CH2-), and R7 may be hydrogen.

[0055] In exemplary embodiments, a weight ratio of the biphenyl type compound to the biphenylaralkyl type compound may be 1.4 to 4.5.

[0056] If the weight ratio is less than 1.4, the flow length of the resin composition may be reduced, and an electronic device sealant having a uniform thickness and heat dissipation properties may not be formed.

[0057] If the weight ratio exceeds 4.5, the composition may not achieve a sufficient glass transition temperature, and thus may not provide sufficient heat resistance in a high temperature environment such as that found in semiconductor packaging.

[0058] In an embodiment, the weight ratio of the biphenyl type compound to the biphenyl aralkyl type compound may be 1.5 to 4, or 2 to 4.

[0059] The content of the epoxy compound may be 1 to 10 wt %, preferably 1 to 8 wt %, and more preferably 3 to 7 wt %, based on the total weight of the resin composition (e.g., solid content). Within the above range, the resin composition can be sufficiently cured while maintaining appropriate fluidity and molding properties.

[0060] Inorganic fillers

[0061] The resin composition may contain an inorganic filler. The inorganic filler can effectively realize heat dissipation characteristics in semiconductor packaging using the sealant.

[0062] For example, the inorganic filler may include fused silica, crystalline silica, calcium carbonate, magnesium carbonate, aluminum oxide, magnesium oxide, clay, talc, calcium silicate, titanium oxide, antimony oxide, glass fiber, etc. These may be used alone or in combination of two or more thereof.

[0063] Preferably, the inorganic filler may include aluminum oxide particles in consideration of heat dissipation performance.

[0064] According to an embodiment of the present invention, the inorganic filler may include aluminum oxide particles surface-treated with a silane agent. The silane agent may stabilize the aluminum oxide particles by chemically bonding or adhering to the surface of the aluminum oxide particles to interact with the epoxy compound or epoxy resin.

[0065] Therefore, the inorganic filler can be uniformly dispersed in the resin composition or sealant, thereby achieving uniform thermal conductivity in the semiconductor package. In addition, the silane agent can prevent the agglomeration of the inorganic filler, thereby increasing the flow length of the resin composition.

[0066] The silane agent may comprise three alkoxy groups and one alkyl group directly bonded to the silicon atom. The alkoxy group may be a methoxy group.

[0067] In exemplary embodiments, the number of carbon atoms of the alkyl group included in the silane agent may be greater than or equal to 7. In this case, interaction with the siloxane-based resin may be effectively promoted.

[0068] Preferably, the number of carbon atoms in the alkyl group contained in the silane agent may be 8 or more, more preferably 12 or more. In an embodiment, the number of carbon atoms in the alkyl group contained in the silane agent may be 16 or more.

[0069] For example, if the number of carbon atoms of the alkyl group included in the silane agent is less than 7, the effect of increasing the flow length by the surface treatment may not be sufficiently achieved.

[0070] In an embodiment, the carbon number of the alkyl group included in the silane agent may be 20 or less in consideration of enhancing thermal conductivity of the aluminum oxide particles.

[0071] In some embodiments, the average particle size (D50) of the aluminum oxide particles may be 0.1 μm to 5 μm, preferably 0.2 μm to 4 μm, or 0.3 μm to 3 μm. Within the particle size range, the dispersibility and thermal conductivity of the aluminum oxide particles can be balanced.

[0072] In an exemplary embodiment, the inorganic filler may include alumina particles that have not been treated with silane and alumina particles that have been surface-treated with a silane agent. The amount of the alumina particles that have not been treated with silane may be greater than the amount of the alumina particles that have been surface-treated with a silane agent, relative to the total weight of the inorganic filler. In this case, the flow length can be effectively increased without reducing the thermal conductivity of the inorganic filler.

[0073] The inorganic filler may be included in a maximum amount in the resin composition to enhance the heat dissipation effect.

[0074] In exemplary embodiments, the amount of the inorganic filler (eg, the sum of the amount of the non-silane-treated aluminum oxide particles and the amount of the aluminum oxide particles surface-treated with the silane agent) may be 85 wt % to 95 wt % based on the total weight of the resin composition.

[0075] For example, if the amount of the inorganic filler is less than 85 wt%, the thermal conductivity of the sealing material may be reduced and may not provide sufficient heat dissipation performance. If the amount of the inorganic filler is greater than 95 wt%, the specific gravity or weight of the sealing material may be excessively increased and the flow length may be reduced.

[0076] Preferably, the amount of the inorganic filler may be 88 wt % to 95 wt %, or 89 wt % to 92 wt %.

[0077] curing agent

[0078] The resin composition may further include a curing agent, which can cross-link with the epoxy compound through an epoxy ring-opening reaction to increase the hardness of the sealing material.

[0079] According to an embodiment, the curing agent may include a hydroxyl group-containing resin, and may include a phenol-based resin or a novolac-based resin.

[0080] For example, the curing agent may include phenol novolac-type phenol resin, polyfunctional phenol resin, xylok-type phenol resin, cresol novolac-type phenol resin, naphthol-type phenol resin, terpene-type phenol resin, dicyclopentadiene-based phenol resin, novolac-type phenol resin synthesized from bisphenol A and resol resin, etc. These may be used alone or in combination of two or more thereof.

[0081] In an embodiment, the curing agent may include a repeating unit represented by Chemical Formula 3.

[0082] [Chemical Formula 3]

[0083]

[0084] The curing agent may be present in an amount of 1 to 15 wt %, preferably 1 to 10 wt %, and more preferably 3 to 8 wt %, based on the total weight of the resin composition. Within this range, sufficient crosslinking performance with the epoxy compound can be achieved while maintaining appropriate fluidity and molding properties.

[0085] Curing catalyst

[0086] The resin composition according to example embodiments may further include a curing catalyst that may promote an epoxy ring-opening reaction of the epoxy-based resin and the curing agent.

[0087] For example, the curing catalyst may include an amine-based compound, an organic metal compound, an organic phosphorus compound, an imidazole-based compound, a boron compound, and the like.

[0088] Non-limiting examples of the amino compound include benzyldimethylamine, triethanolamine, triethylenediamine, diethylaminoethanol, tris(dimethylaminomethyl)phenol, 2-2-(dimethylaminomethyl)phenol, 2,4,6-tris(diaminomethyl)phenol, tris-2-ethylhexanoate, and the like.

[0089] Non-limiting examples of organometallic compounds include chromium acetylacetonate, zinc acetylacetonate, nickel acetylacetonate, and the like.

[0090] Non-limiting examples of the organophosphorus compound include tri-4-methoxyphosphine, tetrabutylphosphine bromide, tetraphenylphosphine bromide, phenylphosphine, diphenylphosphine, triphenylphosphine, triphenylphosphine triphenylborane, triphenylphosphine-1,4-benzoquinone adduct, and the like.

[0091] Non-limiting examples of imidazole compounds include 2-phenyl-4-methylimidazole, 2-methylimidazole, 2-phenylimidazole, 2-aminoimidazole, 2-methyl-1-vinylimidazole, 2-ethyl-4-methylimidazole, 2-heptadecylimidazole, and the like.

[0092] Non-limiting examples of boron compounds include tetraphenylphosphine-tetraphenylborate, triphenylphosphine tetraphenylborate, tetraphenylborate, trifluoroborane-n-hexylamine, trifluoroborane monoethylamine, tetrafluoroborane triethylamine, tetrafluoroborane amine, and the like.

[0093] In some embodiments, the content of the curing catalyst may be 0.01 to 0.5 weight percent, preferably 0.05 to 0.5 weight percent, and more preferably 0.06 to 0.5 weight percent, based on the total weight of the resin composition. Within the above range, the curing speed can be increased without shortening the flow length. For example, when the content of the curing catalyst exceeds 0.5 weight percent, the flow length may be excessively shortened.

[0094] additive

[0095] The resin composition may optionally contain additives in consideration of moldability, adhesive properties, and the like.

[0096] In an embodiment, the additive may include a coupling agent. For example, the coupling agent may improve the interfacial compatibility between the resin component and the inorganic filler.

[0097] The coupling agent may include a silane coupling agent. For example, the coupling agent may include an epoxysilane compound, an aminosilane compound, an alkylsilane compound, and the like.

[0098] In an embodiment, the additive may include a release agent. For example, the release agent may facilitate mold separation. The release agent may include silicone oil, paraffin wax, ester wax, fatty acid compound, etc.

[0099] The content of the additives can be appropriately adjusted within a range that does not inhibit the effects of the epoxy compound, curing agent, curing catalyst, and inorganic filler.

[0100] For example, the additive may be included in an amount of 0.01 to 2 wt %, preferably 0.05 to 1.5 wt %, and more preferably 0.1 to 1 wt %, based on the total weight of the resin composition.

[0101] <Electronic Devices>

[0102] Figure 1 2 is a schematic cross-sectional view showing a semiconductor package using the resin composition for sealing an electronic device according to an embodiment. For example, the electronic device may include a semiconductor package.

[0103] refer to Figure 1 The electronic device may include a circuit board 100 and a semiconductor chip 130 , and may include a sealing material 150 for filling and bonding a space between the semiconductor chip 130 and the circuit board 100 .

[0104] The circuit board 100 may include, for example, a rigid printed circuit board (PCB), a main board, a mid-layer, etc. Internal wiring 110 may be included in the circuit board 100 .

[0105] The semiconductor chip 130 may be mounted on the circuit board 100 by surface mount technology (SMT). The semiconductor chip 130 may include an AP chip, a logic device, a memory device, and the like.

[0106] The semiconductor chip 130 may be electrically connected to internal wirings of the circuit board 100 through the conductive intermediate structure 120. The conductive intermediate structure may include solder, bumps, a ball grid array (BGA), and the like.

[0107] The sealing material 150 may be formed using a resin composition according to an embodiment to fill the space between the semiconductor chip 130 and the circuit board 100 and to bond the semiconductor chip 130 and the circuit board 100 to each other. For example, the sealing material may be formed by curing and molding the resin composition by injection molding or casting molding.

[0108] Example

[0109] In the following, experimental examples including specific embodiments and comparative examples are given to enhance the understanding of the present invention, but this is only for illustrating the present invention, but does not limit the scope of the appended patent claims, and it is clear to those skilled in the art that various changes and modifications can be made to the implementation methods within the scope of the present invention and technical ideas, and it is obvious that these changes and modifications are included in the scope of the appended patent claims.

[0110] Examples and Comparative Examples

[0111] The resin compositions of Examples and Comparative Examples were prepared according to the components and contents (parts by weight) shown in Table 1 and Table 2 below.

[0112] [Table 1]

[0113]

[0114] [Table 2]

[0115]

[0116] The specific components shown in Table 1 and Table 2 are as follows.

[0117] (1) Epoxy compounds

[0118] (a) Biphenyl compound (YX-4000H, Mitsubishi Chemical Corporation, chemical formula 1-1)

[0119] [Chemical Formula 1-1]

[0120]

[0121] (b) Biphenyl-aralkyl compound (NC3000, Nippon Kayaku Co., Ltd., Chemical Formula 2-1) [Chemical Formula 2-1]

[0122]

[0123] (2) Curing agent: a compound containing the unit of chemical formula 3 (MEH-7851SS, Meiwa Industry Co., Ltd.)

[0124] (3) Curing catalyst: 2P4MZZ-PW, Shikoku Chemical Co., Ltd.

[0125] (4) Coupling agent: N-phenyl-γ-aminopropyltrimethoxysilane (Y9669, Momentive)

[0126] (5) Colorant: Carbon black (MA-600, Mitsubishi Chemical Corporation)

[0127] (6) Release agent: Lico wax (Clariant)

[0128] (7) Alumina particles (product of Denki Kogyo Co., Ltd. (Korea))

[0129] 1) Alumina particles not treated with silane

[0130] A mixture of 72 wt% and 18 wt% of DAW03 (D50: 3 μm) and ASFP05S (D50: 0.5 μm) was used, respectively.

[0131] 2) Silane surface treated alumina particles

[0132] The same mixture as the non-silane treated alumina particles was surface treated with the following silane agent.

[0133] i) C=6 silane agent (compound of the following chemical formula 4-1)

[0134] [Chemical Formula 4-1]

[0135]

[0136] ii) C=8 silane agent (compound of the following chemical formula 4-2)

[0137] [Chemical Formula 4-2]

[0138]

[0139] iii) C=12 silane agent (compound of the following chemical formula 4-3)

[0140] [Chemical Formula 4-3]

[0141]

[0142] iv) C=16 silane agent (compound of the following chemical formula 4-4)

[0143] [Chemical Formula 4-4]

[0144]

[0145] Experimental example

[0146] (1) Measurement of coefficient of thermal expansion (CTE)

[0147] After the resin compositions of Examples and Comparative Examples were completely cured at 175° C., the cured resin compositions were heated at a rate of 5° C. per minute within a range of 100° C. to 450° C. to measure the coefficient of thermal expansion (CTE).

[0148] (2) Measurement of glass transition temperature

[0149] The glass transition temperature (Tg) of the resin compositions of Examples and Comparative Examples was measured using a thermomechanical analyzer (TMA) under the condition that the temperature was increased from 25° C. to 300° C. at a rate of 5° C. per minute.

[0150] (3) Evaluation of spiral flow

[0151] The spiral flow measurement mold manufactured based on the EMMI-1-66 standard was used at a molding temperature of 175°C and a flow rate of 70 kgf / cm 2 The flow length of 120 seconds was evaluated under the molding pressure.

[0152] (4) Measurement of thermal conductivity

[0153] After the resin compositions of Examples and Comparative Examples were completely cured at 175° C., thermal conductivity of the cured resin compositions was measured at 25° C. using a thermal conductivity measuring device (Laser Flash Technique (LFA)) according to ASTM D5470.

[0154] The measurement results are shown in Tables 3 and 4 below.

[0155] [Table 3]

[0156]

[0157] [Table 4]

[0158]

[0159] Referring to Tables 3 and 4, in an embodiment of aluminum oxide particles in which a biphenyl-type compound and a biphenyl arane-type compound are mixed in a predetermined ratio and surface-treated with a silane agent containing 8 or more carbon atoms, a glass transition temperature of 120° C. or above and a thermal conductivity of 3 W / mK or above are maintained while achieving a sufficient flow length.

[0160] In Example 6, where the curing catalyst content was greater than 0.5 wt%, the flow length was relatively reduced. In Example 7, where the alumina content was less than 85 wt%, the thermal conductivity was relatively reduced. In Example 8, where the alumina content was greater than 95 wt%, the flow length was relatively reduced.

[0161] The flow length was significantly reduced in Comparative Example 1, where the aluminum oxide particles were not surface treated with a silane agent. The flow length was significantly reduced in Comparative Example 2, where the carbon number of the alkyl group in the surface treatment silane agent was 6, and in Comparative Example 3, where the content of the biphenyl compound was reduced.

[0162] In Comparative Example 4 in which the content of the biphenyl type compound was excessively increased, the glass transition temperature decreased to less than 120°C.

Claims

1. A resin composition for sealing electronic devices, comprising: Biphenyl-type epoxy compounds and biphenyl-aralkyl-type epoxy compounds; An inorganic filler comprising aluminum oxide particles surface-treated with a silane agent, wherein the silane agent comprises an alkyl group having 7 or more carbon atoms, in, In the epoxy compound, the weight ratio of the biphenyl type compound to the biphenyl-aralkyl type compound is 1.4 to 4.

5.

2. The resin composition for sealing electronic devices according to claim 1, wherein The inorganic filler further comprises alumina particles that have not been treated with silane.

3. The resin composition for sealing electronic devices according to claim 1, wherein In the inorganic filler, the amount of the aluminum oxide particles not treated with silane is greater than the amount of the aluminum oxide particles surface-treated with the silane agent.

4. The resin composition for sealing electronic devices according to claim 1, wherein The alkyl group contained in the silane agent has 8 to 20 carbon atoms.

5. The resin composition for sealing electronic devices according to claim 1, wherein The biphenyl-type epoxy compound is represented by the following chemical formula 1: [Chemical Formula 1] In Chemical Formula 1, R1, R2, R3, and R4 are each independently hydrogen or an alkyl group having 1 to 5 carbon atoms.

6. The resin composition for sealing electronic devices according to claim 1, wherein the biphenyl-aralkyl epoxy compound is represented by the following Chemical Formula 2: [Chemical Formula 2] In Chemical Formula 2, R4 and R5 are each an alkylene group having 1 to 5 carbon atoms, R7 is hydrogen or an alkyl group having 1 to 5 carbon atoms, and n is an integer of 1 to 10. 7 . The resin composition for sealing electronic devices according to claim 1 , further comprising a curing agent and a curing catalyst, wherein the curing agent comprises a phenolic resin or a linear phenolic resin.

8. The resin composition for sealing electronic devices according to claim 7, wherein The curing catalyst is present in an amount of 0.01 to 0.5 wt % based on the total weight of the composition.

9. The resin composition for sealing electronic devices according to claim 1, wherein The content of the inorganic filler is 85 to 95 wt % based on the total weight of the composition.

10. The resin composition for sealing electronic devices according to claim 1, wherein In the epoxy compound, the weight ratio of the biphenyl type compound to the biphenyl-aralkyl type compound is 1.5 to 4. 11 . An electronic device comprising a sealant formed of the resin composition for sealing an electronic device according to claim 1 .

12. The electronic device according to claim 11, further comprising a circuit board and a semiconductor chip mounted on the circuit board, in, The sealant fills a space between the circuit board and the semiconductor chip.

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