Circuit board and semiconductor package including same

Abstract

A circuit board according to an embodiment includes: a first insulating layer; and a second insulating layer disposed on the first insulating layer, where the first insulating layer has a first dielectric constant, the second insulating layer has a second dielectric constant less than the first dielectric constant, and the first dielectric constant of the first insulating layer satisfies a range of 9 to 15 (at10 GHz).

Description

Technical Field

[0001] The present embodiment relates to a circuit board, and more particularly, to a circuit board capable of improving antenna performance and a semiconductor package including the circuit board. Background Art

[0002] Recently, in order to meet the demand for wireless data services, efforts are being made to develop improved 5G (fifth generation) communication systems or pre-5G communication systems.

[0003] 5G communication systems use ultra-high frequency (millimeter wave) bands (below 6 GHz, 28 GHz, 38 GHz or higher) to achieve high data transmission rates. This high frequency band is called millimeter wave due to the length of the wavelength.

[0004] In order to reduce the path loss of radio waves and increase the transmission distance of radio waves in ultra-high frequency bands, in 5G communication systems, integrated technologies such as beamforming, massive multiple-input multiple-output (massive MIMO), and array antennas have been developed.

[0005] The antenna system becomes relatively large considering that it may consist of hundreds of active antennas at wavelengths in the frequency band.

[0006] At the same time, the circuit boards used in such antenna systems are constantly required to improve the miniaturization and thinning of the substrate structure.

[0007] Furthermore, the circuit board includes an insulating layer having a high dielectric constant to increase the number of antenna patches arranged on a substrate of limited size.

[0008] At this time, as the dielectric constant of the insulating layer increases, the size of the antenna patch can be reduced, and thus, the circuit board can be miniaturized.

[0009] However, there is a trade-off between the dielectric constant and dielectric loss of the insulating layer. That is, when the dielectric constant of the insulating layer is increased to reduce the size of the antenna patch, the dielectric loss (Df) of the insulating layer increases, which may lead to the problem of deteriorating the signal transmission characteristics of the circuit board. Summary of the Invention

[0010] Technical issues

[0011] The embodiment provides a circuit board having a novel structure and a semiconductor package including the circuit board.

[0012] Furthermore, the embodiment provides a circuit board capable of reducing the size of an antenna pattern and a semiconductor package including the same.

[0013] Furthermore, the embodiment provides a circuit board capable of minimizing signal transmission loss and a semiconductor package including the circuit board.

[0014] Preferably, the embodiment provides a circuit board having an insulating layer with a high dielectric constant and low dielectric loss, and a semiconductor package including the circuit board.

[0015] The technical problems to be solved by the proposed embodiment are not limited to the above-mentioned technical problems, and those skilled in the art in the art to which the proposed embodiment belongs can clearly understand other technical problems not mentioned based on the following description.

[0016] Technical Solution

[0017] According to this embodiment, the circuit board includes: a first insulating layer; and a second insulating layer arranged on the first insulating layer, wherein the first insulating layer has a first dielectric constant, wherein the second insulating layer has a second dielectric constant smaller than the first dielectric constant, and wherein the first dielectric constant of the first insulating layer satisfies the range of 9 to 15 (@10GHz).

[0018] Furthermore, the circuit board further includes: a first wiring layer disposed below the first insulating layer; and a second wiring layer disposed above the second insulating layer, wherein the first wiring layer includes an antenna pattern radiating an antenna signal toward a lower side of the first insulating layer.

[0019] Furthermore, the dielectric loss of the first insulating layer is in the range of 0.005 to 0.009.

[0020] In addition, the first insulating layer includes a first resin and a first filler arranged in the first resin, the second insulating layer includes a second resin and a second filler arranged in the second resin, and the properties of at least one of the first resin and the first filler are different from the properties of at least one of the second resin and the second filler.

[0021] Furthermore, the dielectric constant of the first resin of the first insulating layer is different from the dielectric constant of the second resin of the second insulating layer.

[0022] Furthermore, the dielectric constant of the first resin of the first insulating layer is greater than the dielectric constant of the second resin of the second insulating layer.

[0023] Furthermore, the dielectric loss of the first filler of the first insulating layer is different from the dielectric loss of the second filler of the second insulating layer.

[0024] Furthermore, the dielectric loss of the first filler of the first insulating layer is smaller than the dielectric loss of the second filler of the second insulating layer.

[0025] Furthermore, the circuit board further includes a third insulating layer disposed between the first insulating layer and the second insulating layer, and wherein a dielectric constant of the third insulating layer is different from at least one of a dielectric constant of the first insulating layer and a dielectric constant of the second insulating layer.

[0026] Furthermore, the dielectric constant of the third insulating layer is the same as that of any one of the first insulating layer and the second insulating layer.

[0027] Furthermore, the dielectric constant of the third insulating layer has a value between the dielectric constant of the first insulating layer and the dielectric constant of the second insulating layer.

[0028] At the same time, the semiconductor package according to this embodiment includes a first wiring layer; a first insulating layer arranged on the first wiring layer; a second insulating layer arranged on the first insulating layer; a second wiring layer arranged on the second insulating layer; a connecting portion arranged on the second wiring layer; and a semiconductor device arranged on the connecting portion, wherein the first insulating layer has a first dielectric constant, the second insulating layer has a second dielectric constant smaller than the first dielectric constant, and the first dielectric constant of the first insulating layer satisfies the range of 9 to 15 (@10GHz).

[0029] Furthermore, the first wiring layer includes an antenna pattern, and the semiconductor device includes a driving device that supplies a transmission signal to the antenna pattern and processes a reception signal received through the antenna pattern.

[0030] In addition, the first insulating layer and the first wiring layer are antenna array layers that transmit transmit signals to the outside or receive receive signals from the outside, and the second insulating layer and the second wiring layer are driving layers that transmit transmit signals to the antenna array layer or receive receive signals from the antenna array layer and provide receive signals to the semiconductor device.

[0031] Beneficial effects

[0032] The circuit board of this embodiment includes a first insulating layer and a second insulating layer arranged on the first insulating layer. The first insulating layer is a layer on which a first wiring layer corresponding to an antenna pattern is arranged, and the second insulating layer is a layer on which a second wiring layer corresponding to a driving pattern for driving the antenna pattern is arranged. Therefore, the characteristics of the first insulating layer may be different from those of the second insulating layer. Specifically, the dielectric constant of the first insulating layer may be greater than the dielectric constant of the second insulating layer. For example, the dielectric constant of the first insulating layer may meet the range of 9 to 15 (@10GHz).

[0033] Therefore, this embodiment allows the dielectric constant of the first insulating layer on which the first wiring layer corresponding to the antenna pattern is arranged to be 9 or more, thereby reducing the size of the antenna pattern. As a result, this embodiment can significantly reduce the size of the circuit board and the semiconductor package including the circuit board.

[0034] In addition, this embodiment allows the dielectric constant of the first insulating layer to be 15 or less, so that the first insulating layer has a certain level of rigidity or greater and a certain level of dielectric loss or less. Thus, this embodiment can solve the problem of the circuit board being significantly bent in a specific direction due to the first insulating layer. This embodiment can allow the semiconductor device installed in the semiconductor package including the semiconductor device to operate stably. Thus, this embodiment can improve the operating characteristics of electronic products and / or servers using the semiconductor package and further enhance operational reliability.

[0035] Furthermore, the properties of the second resin of the second insulating layer may differ from those of the first resin of the first insulating layer. Preferably, the dielectric constant of the second resin of the second insulating layer may be less than the dielectric constant of the first resin of the first insulating layer. Furthermore, the properties of the second filler of the second insulating layer may differ from those of the first filler of the first insulating layer. Preferably, the dielectric loss of the second filler of the second insulating layer may be greater than the dielectric loss of the first filler of the first insulating layer. This can be achieved by controlling the properties of the first filler of the first insulating layer so that the dielectric loss of the first insulating layer having a dielectric constant above a specific level is less than a specific level.

[0036] Therefore, this embodiment can allow the first insulating layer and the second insulating layer to have different characteristics according to the functions of the wiring layers respectively arranged on the first insulating layer and the second insulating layer, thereby improving the electrical characteristics of the circuit board and improving the antenna characteristics of the antenna pattern provided on the circuit board. In addition, this embodiment can reduce the size of the antenna pattern provided on the circuit board, thereby miniaturizing the circuit board. In addition, this embodiment can improve the physical and / or electrical reliability of the circuit board, and can enable a semiconductor device mounted on a semiconductor package including the circuit board to operate stably. Thus, this embodiment can improve the operating characteristics of electronic products and / or servers using semiconductor packages, and further improve operational reliability. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] Figure 1 is a cross-sectional view showing a circuit board according to this embodiment.

[0038] Figure 2 Is used to explain Figure 1 Figure 4 shows the characteristics of the first insulating layer.

[0039] Figure 3 It is a plan view for explaining the dimensions of an antenna pattern of a comparative example.

[0040] Figure 4 It is a plan view for explaining the dimensions of the antenna pattern of this embodiment.

[0041] Figure 5 It is shown that Figure 1Figure 1. A diagram of a semiconductor package on a circuit board. DETAILED DESCRIPTION

[0042] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the spirit and scope of the present invention are not limited to a portion of the described embodiments, and may be implemented in various other forms, and within the spirit and scope of the present invention, one or more elements of the embodiment may be selectively combined and rearranged. However, the spirit and scope of the present invention are not limited to a portion of the described embodiments, and may be implemented in various other forms, and within the spirit and scope of the present invention, one or more elements of the embodiment may be selectively combined and rearranged.

[0043] In addition, unless otherwise explicitly defined and described, the terms (including technical and scientific terms) used in the embodiments of the present invention can be interpreted as having the same meaning as commonly understood by those skilled in the art to which the present invention belongs, and terms (for example, terms defined in commonly used dictionaries, etc.) can be interpreted as having a meaning consistent with their meaning in the context of the relevant technology. In addition, the terms used in the embodiments of the present invention are only used to describe the embodiments and are not used to limit the present invention.

[0044] In this specification, unless otherwise specified in the phrase, the singular form may also include the plural form, and may include at least one of all combinations that can be combined among A, B and C when describing "at least one (or more) of A (and), B and C".

[0045] In addition, when describing the elements of the embodiments of the present invention, terms such as first, second, A, B, (a), and (b) may be used. These terms are only used to distinguish an element from other elements and are not limited to the nature, order, or sequence of the elements.

[0046] In addition, when an element is described as being “connected,” “coupled” or “in contact with” another element, it may include not only the case where the element is directly “connected,” “coupled” or “in contact with” the other element, but also the case where the element is “connected,” “coupled” or “in contact with” the other element through another element between the element and the other element.

[0047] In addition, when described as being formed or arranged "on (above)" or "under (below)" each element, "on (above)" or "under (below)" may include not only the case where two elements are directly connected to each other, but also the case where one or more other elements are formed or arranged between the two elements.

[0048] Furthermore, when “upper” or “lower” is expressed, it may include not only a case in an upper direction based on one element but also a case in a lower direction based on one element.

[0049] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0050] -Electronic equipment-

[0051] Before describing this embodiment, an electronic device to which the semiconductor package of this embodiment is applied will be briefly described. The electronic device includes a mainboard (not shown). The mainboard can be physically and / or electrically connected to various components. For example, the mainboard can be connected to the semiconductor package of this embodiment. Various semiconductor devices can be mounted on the semiconductor package. In a broad sense, the semiconductor package can include various components or chips. These components or chips can include memory chips, such as volatile memory (such as DRAM), non-volatile memory (such as ROM), flash memory, application processor chips, such as central processing units (such as CPUs), graphics processing units (such as GPUs), digital signal processors, encryption processors, microprocessors, microcontrollers, and logic chips, such as analog-to-digital converters and ASICs (application-specific ICs).

[0052] The device or chip may include active devices and / or passive devices.

[0053] Active devices are those that actively exploit the nonlinear aspects of signal characteristics. Furthermore, passive devices are those that do not exploit nonlinear signal characteristics, even if both linear and nonlinear signal characteristics are present. For example, active devices can include transistors and integrated circuit semiconductor devices, while passive devices can include capacitors, resistors, inductors, and the like. Passive devices can increase the signal processing speed of semiconductor chips that are active devices or perform filtering functions. Furthermore, such chips can be wireless communication chips that can be used for Wi-Fi or 5G communications.

[0054] On the other hand, the product group of the semiconductor package to which this embodiment is applied may be any one of CSP (chip scale packaging), FC-CSP (flip chip scale packaging), FC-BGA (flip chip ball grid array), POP (stacked package) and SIP (system in package), but is not limited thereto.

[0055] In this case, the electronic device may be a smartphone, a personal digital assistant, a digital video camera, a digital camera, a network system, a computer, a monitor, a tablet computer, a laptop computer, a netbook, a television, an electronic game, a smart watch, a car, etc. However, the embodiment is not limited thereto and may be any other electronic device that processes data in addition to these.

[0056] -Circuit Board-

[0057] Figure 1 is a sectional view showing a circuit board according to this embodiment, Figure 2 Is used to explain Figure 1 Figure 2 shows the characteristics of the first insulating layer. Figure 3 is a plan view for explaining the dimensions of an antenna pattern of a comparative example, and Figure 4 It is a plan view for explaining the dimensions of the antenna pattern of this embodiment. Figure 1 The circuit board may be an antenna board including an antenna pattern.

[0058] Reference Figure 1 , the circuit board 100 can be mounted with at least one semiconductor device. In addition, the circuit board 100 of this embodiment enables it to be attached to a main board of an electronic device. The main board may refer to the main board of the electronic device.

[0059] Furthermore, the semiconductor device mounted on the circuit board 100 may be one, or alternatively, may be two or more.

[0060] The circuit board 100 includes an insulating layer 110 .

[0061] The insulating layer 110 has a multi-layer structure.

[0062] For example, the insulating layer 110 may include multiple layers having different properties. These properties include the dielectric constant and dielectric loss of each insulating layer. In addition, the properties may also include at least one of the coefficient of thermal expansion (CTE), glass transition temperature, modulus, and shrinkage of each insulating layer.

[0063] That is, each layer of the insulating layer 110 may have different desired characteristics and may have different properties corresponding to each desired characteristic. Therefore, each layer of the insulating layer 110 may include different insulating materials.

[0064] For example, the insulating layer 110 may include a first insulating layer 111 and a second insulating layer 112 disposed on the first insulating layer 110 .

[0065] In this case, the circuit board 100 of this embodiment may be a core board. For example, the insulating layer 110 may include a third insulating layer 113 disposed between the first insulating layer 111 and the second insulating layer 112. The third insulating layer 113 may be a core layer.

[0066] Therefore, the circuit board 100 of this embodiment may have a structure in which the first insulating layer 111 and the second insulating layer 112 are stacked on both sides of the third insulating layer 113 in the thickness direction.

[0067] Hereinafter, the circuit board 100 of this embodiment is described as a core board, and therefore, the second insulating layer 112 is a core layer. However, this embodiment is not limited thereto. For example, the circuit board 100 of this embodiment may be a coreless board that does not include a core layer.

[0068] The third insulating layer 113 may be a core layer, the first insulating layer 111 may be a lower insulating layer disposed below the third insulating layer 113 , and the second insulating layer 112 may be an upper insulating layer disposed on the third insulating layer 113 .

[0069] The thickness of each of the first insulating layer 111 and the second insulating layer 112 may be different from that of the third insulating layer 113. For example, the thickness of the first insulating layer 111 and the second insulating layer 112 may be smaller than that of the third insulating layer 113.

[0070] The third insulating layer 113 may include a prepreg. For example, the third insulating layer 113 may increase the physical strength of the circuit board to improve the warping characteristics of the circuit board. The third insulating layer 113 may have a structure in which a fiber layer in the form of a fabric sheet (such as glass fabric woven with glass yarn) is impregnated with epoxy resin, etc. However, the third insulating layer 113 of this embodiment may include a fiber layer in the form of a fabric sheet woven with carbon fiber yarn.

[0071] Specifically, the third insulating layer 113 may include a resin and reinforcing fibers arranged in the resin. The resin may be an epoxy resin, but is not limited thereto. The resin is not particularly limited to epoxy resins, and for example, it may include one or more epoxy groups in one molecule, or alternatively, the resin may include two or more epoxy groups, or alternatively, the resin may include four or more epoxy groups. In addition, the resin constituting the insulating layer 110 may include a naphthyl group, and for example, the resin may be an aromatic amine type, but is not limited thereto. For example, the resin may include bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, phenol novolac type epoxy resin, alkylphenol novolac type epoxy resin, biphenyl type epoxy resin, aralkyl type epoxy resin, dicyclopentadiene type epoxy resin, naphthalene type epoxy resin, naphthol type epoxy resin, epoxy resin of the condensation product of phenol and aromatic aldehyde having a phenolic hydroxyl group, biphenyl aralkyl type epoxy resin, fluorene type epoxy resin, xanthene type epoxy resin, triglycidyl isocyanurate, rubber modified epoxy resin and phosphorus-containing epoxy resin, and may include naphthalene type epoxy resin, bisphenol A type epoxy resin, phenol novolac epoxy resin, cresol novolac epoxy resin, rubber modified epoxy resin and phosphorus-containing epoxy resin. In addition, the reinforcing fibers may be glass fibers, carbon fibers, aramid fibers (e.g., organic materials of the aramid series), nylon, inorganic materials of the silica series, or inorganic materials of the titanium dioxide series. The reinforcing fibers may be arranged in the resin in a manner that they intersect with each other in a planar direction.

[0072] Meanwhile, glass fiber, carbon fiber, aramid fiber (eg, aramid series organic material), nylon, silica series inorganic material, or titanium dioxide series inorganic material may be used.

[0073] The thickness of the third insulating layer 113 may be 1.5 times or more, 2 times or more, 3 times or more, or 5 times or more of the thickness of each of the first insulating layer 111 and the second insulating layer 112 .

[0074] For example, the thickness of the third insulating layer 113 may be within a range of 100 μm to 600 μm. For example, the thickness of the third insulating layer 113 may be within a range of 120 μm to 550 μm. For example, the thickness of the third insulating layer 113 may be within a range of 150 μm to 500 μm.

[0075] If the thickness of the third insulating layer 113 is less than 100 μm, the warping characteristics of the circuit board will deteriorate. In addition, as the performance of semiconductor packaging improves, the number of insulating layers of the circuit board is also increasing. For example, the number of insulating layers of the circuit board may be 10 layers or more, 12 layers or more, 16 layers or more, or 20 layers or more. In addition, as the number of insulating layers of the circuit board increases, the warping of the circuit board should be minimized. In addition, if the thickness of the third insulating layer 113 is less than 100 μm, it is difficult to prevent the circuit board from bending, and thus the quality of the circuit board will deteriorate. For example, if the circuit board bends, it may be difficult to form the through-electrode included in the circuit board in an accurate position. In addition, if the circuit board bends, problems such as misalignment of the semiconductor device may occur during the process of mounting the semiconductor device on the circuit board. In addition, if the semiconductor device is misaligned, the antenna characteristics implemented by the circuit board may deteriorate.

[0076] Meanwhile, if the thickness of the third insulating layer 113 exceeds 600 μm, the total thickness of the circuit board increases, and thus the total thickness of the semiconductor package increases. That is, if the thickness of the third insulating layer 113 exceeds 600 μm, it may be difficult to thin the circuit board and the semiconductor package.

[0077] The thickness of the first insulating layer 111 and the second insulating layer 112 may be smaller than the thickness of the third insulating layer 113 .

[0078] For example, the thickness of the first insulating layer 111 and the third insulating layer 113 may each be in the range of 30 μm to 120 μm. Preferably, the thickness of the first insulating layer 111 and the second insulating layer 112 may each be in the range of 35 μm to 115 μm. More preferably, the thickness of the first insulating layer 111 and the second insulating layer 112 may each be in the range of 40 μm to 110 μm.

[0079] If the thickness of the first insulating layer 111 or the second insulating layer 112 is less than 30 μm, the circuit pattern layer included in the circuit board 100 may not be reliably protected. Furthermore, if the thickness of the first insulating layer 111 or the second insulating layer 112 exceeds 120 μm, the thickness of the circuit board 100 may increase, thereby increasing the thickness of the semiconductor package. Furthermore, if the thickness of the first insulating layer 111 or the second insulating layer 112 exceeds 120 μm, the thickness of the circuit pattern layer and the thickness of the through-electrode may increase accordingly. Furthermore, if the thickness of the circuit pattern layer and the through-electrode increases, miniaturization may be difficult, resulting in reduced circuit integration and increased signal transmission distance, which may increase signal transmission loss. Furthermore, if the thickness of the first insulating layer 111 or the second insulating layer 112 exceeds 120 μm, the first insulating layer 111 or the second insulating layer 112 of the circuit board may not meet the required properties. The required properties may include the required dielectric constant and dielectric loss in the first insulating layer 111 or the second insulating layer 112. Furthermore, the desired characteristics may further include at least one of a thermal expansion coefficient and a glass transition temperature required in the first insulating layer 111 or the second insulating layer 112 .

[0080] The thicknesses of the first insulating layer 111 and the second insulating layer 112 may be different.

[0081] For example, the thickness of the first insulating layer 111 may be greater than the thickness of the second insulating layer 112. For example, the thickness of the first insulating layer 111 may be in a range of 105% to 150% of the thickness of the second insulating layer 112. For example, the thickness of the first insulating layer 111 may be in a range of 106% to 140% of the thickness of the second insulating layer 112. For example, the thickness of the first insulating layer 111 may be in a range of 108% to 135% of the thickness of the second insulating layer 112.

[0082] Preferably, the first insulating layer 111 and the second insulating layer 112 may have different properties. For example, the dielectric constant of the first insulating layer 111 may be different from the dielectric constant of the second insulating layer 112. For example, the dielectric loss of the first insulating layer 111 may be different from the dielectric loss of the second insulating layer 112. In addition, at least one of the thermal expansion coefficient and the glass transition temperature of the first insulating layer 111 may be different from at least one of the thermal expansion coefficient and the glass transition temperature of the second insulating layer 112.

[0083] To this end, the first insulating layer 111 may include a first insulating material, and the second insulating layer 112 may include a second insulating material different from the first insulating material.

[0084] Preferably, the first insulating layer 111 may include a first resin, a first reinforcing fiber, and a first filler.

[0085] In addition, the second insulating layer 112 may include a second resin, a second reinforcing fiber, and a second filler.

[0086] At this time, the first resin content, the first reinforcing fiber content, and the first filler content of the first insulating layer 111 may be different from at least one of the second resin content, the second reinforcing fiber content, and the second filler content of the second insulating layer 112 .

[0087] In addition, properties of the first resin, first reinforcing fiber, and first filler of the first insulating layer 111 may be different from at least one of properties of the second resin, second reinforcing fiber, and second filler of the second insulating layer 112 .

[0088] Preferably, the properties of the first resin of the first insulating layer 111 may be different from the properties of the second resin of the second insulating layer 112. In addition, the properties of the first filler of the first insulating layer 111 may be different from the properties of the second filler of the second insulating layer 112.

[0089] Specifically, the dielectric constant of the first insulating layer 111 of this embodiment may be different from the dielectric constant of the second insulating layer 112. Preferably, the dielectric constant of the first insulating layer 111 may be greater than the dielectric constant of the second insulating layer 112.

[0090] In addition, this embodiment allows at least one property of the first resin, first reinforcing fiber and first filler of the first insulating layer 111 to be different from at least one of the properties of the second resin, second reinforcing fiber and second filler of the second insulating layer 112, so that the dielectric constant of the first insulating layer 111 is greater than the dielectric constant of the second insulating layer 112.

[0091] For example, the dielectric constant of the first insulating layer 111 may be in the range of 9 to 15 (@10 GHz). For example, the dielectric constant of the first insulating layer 111 may be in the range of 9.2 to 14.7 (@10 GHz). For example, the dielectric constant of the first insulating layer 111 may be in the range of 9.5 to 14.5 (@10 GHz).

[0092] If the dielectric constant of the first insulating layer 111 is less than 9 (@10 GHz), the size of the antenna pattern provided in the circuit board increases. Furthermore, if the size of the antenna pattern increases, the number of antenna patterns that can be arranged in a limited space decreases. Furthermore, if the size of the antenna pattern increases, the number of layers or the planar area of the circuit board must increase in order to accommodate the required number of antenna patterns.

[0093] For example, the size of the antenna pattern may be determined by Equation 1 below.

[0094] [Equation 1]

[0095]

[0096] In Equation 1, Dk is the dielectric constant, f is the frequency, and c represents the speed of light.

[0097] Referring to Equation 1, the size of the antenna pattern is inversely proportional to the dielectric constant of the first insulating layer 111, and therefore, as the dielectric constant of the first insulating layer 111 increases, the size of the antenna pattern may decrease, and as the dielectric constant of the first insulating layer 111 decreases, the size of the antenna pattern may increase.

[0098] Therefore, this embodiment allows the dielectric constant of the first insulating layer 111 on which the circuit pattern layer corresponding to the antenna pattern is arranged to have a value of 9 or more, thereby reducing the size of the antenna pattern.

[0099] Meanwhile, if the dielectric constant of the first insulating layer 111 exceeds 15, the rigidity of the first insulating layer 111 may be reduced. For example, if the dielectric constant of the first insulating layer 111 exceeds 15, the thermal expansion coefficient of the first insulating layer 111 may increase significantly, and thus, the circuit board may bend significantly in a specific direction.

[0100] Specifically, according to the dielectric constant of the first insulating layer 111 , the thermal expansion coefficient and the modulus of the first insulating layer 111 are as shown in Table 1 below.

[0101]

Table 1

[0102] Dielectric constant (Dk) Thermal expansion coefficient (ppm / ℃) Modulus (GPa) 8 11 25 11 17 20 15 19 18 17 30 12

[0103] Referring to Table 1, if the dielectric constant of the first insulating layer 111 exceeds 15, it can be seen that the corresponding thermal expansion coefficient value rapidly increases to 30 ppm / °C or above. In addition, if the dielectric constant of the first insulating layer 111 exceeds 15, it can be seen that the modulus value of the first insulating layer 111 rapidly decreases to 12 GPa or below. Therefore, this embodiment satisfies the dielectric constant of the first insulating layer 111 within the range of 9 to 15, thereby allowing the dielectric constant of the first insulating layer 111 to be within the target range while maintaining the thermal expansion coefficient and modulus of the first insulating layer 111 at the target levels.

[0104] In addition, if the dielectric constant of the first insulating layer 111 exceeds 15, the dielectric loss (Df) of the first insulating layer 111, which increases in response to the increase in the dielectric constant, may fall outside the target range. As a result, the electrical characteristics of the circuit board may be degraded, and thus the antenna characteristics of the circuit board may be degraded.

[0105] That is, by changing the content and properties of the first resin, first filler, and first reinforcing fiber provided in the first insulating layer 111, this embodiment allows the first insulating layer 111 to meet the target range of dielectric constant while meeting the target range of dielectric loss.

[0106] The dielectric constant and dielectric loss are directly proportional. For example, when the dielectric constant increases, the dielectric loss may also increase, and when the dielectric constant decreases, the dielectric loss may also decrease.

[0107] Therefore, this embodiment allows the first insulating layer 111 to have a target range of dielectric constant and dielectric loss by changing the content and type of the first resin, first filler, and first reinforcing fiber materials of the first insulating layer 111 .

[0108] The dielectric loss (Df) of the first insulating layer 111 of this embodiment may be within a range of 0.005 to 0.009. For example, the dielectric loss (Df) of the first insulating layer 111 of this embodiment may be within a range of 0.005 to 0.0085. For example, the dielectric loss (Df) of the first insulating layer 111 of this embodiment may be within a range of 0.005 to 0.008.

[0109] If the dielectric loss (Df) of the first insulating layer 111 is less than 0.005, the first insulating layer 111 may not meet the target range of the dielectric constant, and thus the size of the antenna pattern disposed on the first insulating layer 111 may increase. In addition, if the size of the antenna pattern increases, the number of layers of the first insulating layer 111 may increase or the plane area of the first insulating layer 111 may increase, thereby increasing the volume of the circuit board and the semiconductor package including the circuit board.

[0110] If the dielectric loss (Df) of the first insulating layer 111 exceeds 0.009, the transmission loss of a signal transmitted through the antenna pattern may increase, and thus the radiation characteristics of the antenna pattern may be degraded.

[0111] Reference Figure 2 , the dielectric constant (Dk) and dielectric loss (Df) of the first insulating layer 111 are as follows. Figure 2 Df_1 is a graph showing the relationship between the dielectric constant and the dielectric loss of the first insulating layer of Example 1, and Df_2 is a graph showing the relationship between the dielectric constant and the dielectric loss of the first insulating layer of Example 2.

[0112] Reference Figure 2 In Examples 1 and 2, when the dielectric constant (Dk) of the first insulating layer 111 is in the range of 9 to 15, it is confirmed that the corresponding dielectric loss (Df) is in the range of 0.005 to 0.009. Figure 2, when the dielectric constant (Dk) of the first insulating layer 111 exceeds 15, it is confirmed that the dielectric loss (Df) rapidly increases to 0.01. Therefore, by setting the dielectric constant (Dk) of the first insulating layer 111 to a range of 9 to 15 and the dielectric loss (Df) to a range of 0.005 to 0.009, this embodiment makes it possible to minimize the transmission loss of the antenna pattern arranged on the first insulating layer 111, thereby minimizing the transmission loss while improving the electrical characteristics, thereby improving the antenna characteristics. Therefore, this embodiment can improve the electrical characteristics and antenna characteristics of the antenna pattern while minimizing the size of the antenna pattern.

[0113] Meanwhile, by changing the types and contents of the materials of the first resin, the first filler, and the first reinforcing fiber constituting the first insulating layer 111 , the dielectric constant and the dielectric loss of the first insulating layer 111 may be within the above ranges.

[0114] Preferably, the first insulating layer 111 of this embodiment uses a first resin such that the dielectric constant of the first insulating layer 111 is within a range of 9 to 15. For example, the material type and content of the first resin are adjusted to ensure that the dielectric constant of the first insulating layer 111 is within the aforementioned range. Furthermore, the first insulating layer 111 of this embodiment uses a first filler such that the dielectric loss of the first insulating layer 111 is within a range of 0.005 to 0.009. For example, this embodiment allows the dielectric loss of the first insulating layer 111 to be within the aforementioned range by varying the content and material type of the first filler.

[0115] Therefore, this embodiment uses the properties of the first resin to adjust the dielectric constant of the first insulating layer 111 and uses the properties of the first filler to adjust the dielectric loss of the first insulating layer 111, thereby allowing the first insulating layer 111 to meet the dielectric constant and dielectric loss within target ranges, respectively.

[0116] Meanwhile, the first insulating layer 111 may be provided with a plurality of layers. For example, the first insulating layer 111 may include a 1-1 layer 111-1 and a 1-2 layer 111-2 disposed on the 1-1 layer 111-1. In addition, the 1-1 layer 111-1 and the 1-2 layer 111-2 may each have a dielectric constant in the range of 9 to 15 and a dielectric loss in the range of 0.005 to 0.009.

[0117] Meanwhile, the characteristics of the second insulating layer 112 may be different from those of the first insulating layer 111 .

[0118] For example, the dielectric constant of the second insulating layer 112 may be different from the dielectric constant of the first insulating layer 111. For example, the dielectric constant of the second insulating layer 112 may be smaller than the dielectric constant of the first insulating layer 111.

[0119] For example, the properties of the second resin of the second insulating layer 112 may be different from the properties of the first resin of the first insulating layer 111. Preferably, at least one of the content and type of the material of the second resin of the second insulating layer 112 may be different from at least one of the content and type of the material of the first resin of the first insulating layer 111. Preferably, the dielectric constant of the second resin of the second insulating layer 112 may be smaller than the dielectric constant of the first resin of the first insulating layer 111.

[0120] Furthermore, the properties of the second filler of second insulating layer 112 may differ from the properties of the first filler of first insulating layer 111. Preferably, at least one of the content and type of the material of the second filler of second insulating layer 112 may differ from at least one of the content and type of the material of the first filler of first insulating layer 111. Preferably, the dielectric loss of the second filler of second insulating layer 112 may be greater than the dielectric loss of the first filler of first insulating layer 111. This can be achieved by adjusting the properties of the first filler of first insulating layer 111 so that first insulating layer 111, having a dielectric constant above a specific level, has a dielectric loss below a specific level.

[0121] Therefore, this embodiment can make the characteristics of the first insulating layer 111 and the second insulating layer 112 different according to the functions of the wiring layers respectively arranged on the first insulating layer 111 and the second insulating layer 112, thereby improving the electrical characteristics of the circuit board and improving the antenna characteristics of the antenna pattern provided on the circuit board. In addition, this embodiment can reduce the size of the antenna pattern arranged on the circuit board, thereby miniaturizing the circuit board. In addition, this embodiment can improve the physical and / or electrical reliability of the circuit board, and can enable a semiconductor device mounted on a semiconductor package including the circuit board to operate stably. Thus, this embodiment can improve the operating characteristics of electronic products and / or servers using semiconductor packages, and further improve operational reliability.

[0122] Meanwhile, the second insulating layer 112 may be provided in multiple layers. For example, the second insulating layer 112 may include a 2-1 layer 112-1 disposed on the third insulating layer 113 and a 2-2 layer 112-2 disposed on the 2-1 layer 112-1. However, the embodiment is not limited thereto, and the number of layers of the second insulating layer 112 may be further increased.

[0123] Meanwhile, the properties of the third insulating layer 113 of one embodiment can be the same as those of the first insulating layer 111 or the second insulating layer 112. For example, the properties of the third insulating layer 113 can be the same as those of the first insulating layer 111. For example, the properties of the third insulating layer 113 can be the same as those of the second insulating layer 112. Thus, this embodiment can use either the first insulating layer 111 or the second insulating layer 112 to provide the third insulating layer 113, thereby facilitating the selection of materials for the multiple insulating layers of the circuit board.

[0124] In addition, the properties of the third insulating layer 113 of another embodiment may differ from the properties of the first insulating layer 111 and the second insulating layer 112. However, the dielectric constant of the third insulating layer 113 may be between the dielectric constant of the first insulating layer 111 and the dielectric constant of the second insulating layer 112. Thus, this embodiment can address mechanical and electrical reliability issues arising from the difference in dielectric constant between the first insulating layer 111 and the second insulating layer 112. For example, this embodiment can mitigate the difference in dielectric constant between the first insulating layer 111 and the second insulating layer 112 through the third insulating layer 113, thereby improving the mechanical and electrical reliability of the circuit board and the semiconductor package including the circuit board.

[0125] The circuit board 100 of this embodiment includes a wiring layer disposed on an insulating layer 110. The wiring layer may include a circuit pattern layer and through electrodes according to position and function.

[0126] For example, the circuit board 100 may include a first wiring layer 120 disposed on the first insulating layer 111. The first wiring layer 120 may include a first circuit pattern layer 121 disposed on a surface of the first insulating layer 111 and a first through electrode 122 penetrating the first insulating layer 111.

[0127] Furthermore, the circuit board 100 may include a second wiring layer 130 disposed on the second insulating layer 112. The second wiring layer 130 may include a second circuit pattern layer 131 disposed on a surface of the second insulating layer 112 and a second through electrode 132 penetrating the second insulating layer 112.

[0128] Furthermore, the circuit board 100 may include a third wiring layer 140 disposed on the third insulating layer 113 . The third wiring layer 140 may include a third circuit pattern layer 141 disposed on a surface of the third insulating layer 113 and a third through electrode 142 penetrating the third insulating layer 113 .

[0129] The first to third circuit pattern layers 121, 131 and 141 can be formed by additive process, subtractive process, MSAP (modified semi-additive process) and SAP (semi-additive process), which are traditional manufacturing processes of printed circuit boards and detailed descriptions thereof are omitted here.

[0130] The first to third circuit pattern layers 121, 131, and 141 may be formed from at least one metal material selected from the group consisting of gold (Au), silver (Ag), platinum (Pt), titanium (Ti), tin (Sn), copper (Cu), and zinc (Zn). Furthermore, the first, second, and third circuit pattern layers 121, 131, and 141 may be formed from a paste or solder paste containing at least one metal material selected from the group consisting of gold (Au), silver (Ag), platinum (Pt), titanium (Ti), tin (Sn), copper (Cu), and zinc (Zn), which has excellent bonding strength. Preferably, the first to third circuit pattern layers 121, 131, and 141 may be formed from relatively inexpensive copper (Cu).

[0131] The thickness of the first to third circuit pattern layers 121, 131, and 141 can each be in the range of 5 μm to 30 μm. For example, the thickness of the first to third circuit pattern layers 121, 131, and 141 can each be in the range of 6 μm to 27 μm. The thickness of the first to third circuit pattern layers 121, 131, and 141 can each be in the range of 7 μm to 23 μm. If the thickness of each of the first to third circuit pattern layers 121, 131, and 141 is less than 5 μm, the resistance may increase. When the thickness of each of the first to third circuit pattern layers 121, 131, and 141 exceeds 30 μm, circuit miniaturization may be difficult, and thus the circuit integration may be reduced.

[0132] At the same time, the first circuit pattern layer 121 can be an antenna pattern that transmits and receives communication signals to and from the outside. In this case, the first circuit pattern layer 121 is arranged below the first insulating layer 111, which has a dielectric constant in the range of 9 to 15. Therefore, compared to the comparative example, this embodiment can reduce the size of the antenna pattern of the first circuit pattern layer 121. In other words, as shown in Equation 1, the size of the antenna pattern can be determined by the dielectric constant of the first insulating layer 111.

[0133] That is, the dielectric constant of the insulating layer on which the antenna pattern of the comparative example is arranged ranges from 5 to 9. Therefore, referring to Figure 3 The antenna pattern of the comparative example has a first width w1 in the first horizontal direction and a second width w2 in the second horizontal direction, and a first interval w3 is provided between the plurality of antenna patterns.

[0134] At the same time, refer to Figure 4, the antenna pattern of this embodiment may have a third width w1 smaller than the first width w1 in the first horizontal direction, a fourth width w2 smaller than the second width w2 in the second horizontal direction, and a second spacing w3 smaller than the first spacing w3 between multiple antenna patterns.

[0135] Therefore, the first area occupied by the unit antenna pattern determined by the third width w1, fourth width w2, and second spacing w3 of this embodiment can be smaller than the second area occupied by the unit antenna pattern determined by the first width w1, second width w2, and first spacing w3 of the comparative example. For example, the reduction ratio of the first area to the second area is shown in Table 2 below.

[0136]

Table 2

[0137] Dielectric constant 7 9 10 13 15 17 Example 1 100％ 57％ 65％ 72％ 80％ 85％ Example 2 100％ 55％ 61％ 69％ 77.5％ 82％

[0138] Referring to Table 2, the antenna pattern according to this embodiment is arranged on a first insulating layer 111 having a dielectric constant in the range of 9 to 15. Therefore, compared to a comparative example having a dielectric constant less than 9, the size of the antenna pattern can be reduced by at least 55% and at most 80%. Furthermore, as the dielectric constant of the first insulating layer 111 increases, the size of the antenna pattern can be further reduced. However, if the dielectric constant of the first insulating layer 111 exceeds 15, the corresponding dielectric loss may not meet the target range, or the warpage characteristics of the circuit board may deteriorate.

[0139] At the same time, Figure 4 , the antenna patterns are shown to be square and spaced apart in the length direction, but are not limited thereto.

[0140] For example, the antenna pattern may be circular.

[0141] For example, the antenna pattern may be in a diamond shape.

[0142] Furthermore, the antenna patterns may be arranged in a zigzag shape in the length direction.

[0143] The first to third through electrodes 122, 132, and 142 may penetrate each insulating layer. The first to third through electrodes 122, 132, and 142 may be arranged in through holes that penetrate each insulating layer. For example, the first to third through electrodes 122, 132, and 142 may be formed by filling the through holes with a conductive material.

[0144] The through holes can be formed by any of mechanical, laser, and chemical processing methods. The through holes can be formed by mechanical processing methods (such as milling, drilling, and routing). In addition, the through holes can be formed using UV or CO2 laser methods. In addition, the through holes can be formed using chemical processing methods that use chemicals including aminosilanes, ketones, etc.

[0145] When forming the through-holes, the interior of the through-holes may be filled with any one metal material selected from copper (Cu), silver (Ag), tin (Sn), gold (Au), nickel (Ni), and palladium (Pd) to form the first to third through-electrodes 122, 132, and 142. At this time, the conductive material may be filled using any one of chemical plating, electrolytic plating, screen printing, sputtering, evaporation, inkjet printing, and dispensing, or a combination thereof.

[0146] The circuit board 100 of this embodiment includes a protection layer.

[0147] Specifically, a first protective layer 150 may be disposed on the lower surface of the first insulating layer 111. The first protective layer 150 may be provided to cover the first circuit pattern layer 121. For example, the first circuit pattern layer 121 may be embedded in the first protective layer 150. However, this embodiment is not limited thereto, and at least a portion of the first circuit pattern layer 121 may not be covered by the first protective layer 150. For example, the first protective layer 150 may include at least one first opening that vertically overlaps the first circuit pattern layer 121.

[0148] Meanwhile, the circuit board may include a second protective layer 160 disposed on the upper surface of the second insulating layer 112. The second protective layer 160 may include at least one opening. Specifically, the second protective layer 160 may include at least one second opening vertically overlapping the second circuit pattern layer 132.

[0149] The first protective layer 150 and the second protective layer 160 may include an insulating material. The first protective layer 150 and the second protective layer 160 may include various materials that can be cured by heating after coating to protect the surfaces of the insulating layer and the circuit pattern layer.

[0150] The first protective layer 150 and the second protective layer 160 may be solder resist layers containing an organic polymer material. For example, the first protective layer 150 and the second protective layer 160 may include epoxy acrylate series resins. In detail, the first protective layer 150 and the second protective layer 160 may include resins, curing agents, photoinitiators, pigments, solvents, fillers, additives, acrylic monomers, etc. However, this embodiment is not limited thereto, and the first protective layer 150 and the second protective layer 160 may be any one of a photo solder resist layer, a cover layer, and a polymer material.

[0151] The thickness of the first protective layer 150 and the second protective layer 160 may be 1 μm to 20 μm. The thickness of the first protective layer 150 and the second protective layer 160 may be 1 μm to 15 μm. For example, the thickness of the first protective layer 150 and the second protective layer 160 may be 5 μm to 20 μm. When the thickness of the first protective layer 150 and the second protective layer 160 exceeds 20 μm, the total thickness of the circuit board and the semiconductor package will increase. Meanwhile, although the circuit board is shown in the drawings as including the first protective layer 150 and the second protective layer 160, it is not limited thereto. For example, at least one of the first protective layer 150 and the second protective layer 160 may be omitted.

[0152] The circuit board of this embodiment includes a first insulating layer and a second insulating layer arranged on the first insulating layer. The first insulating layer is a layer on which a first wiring layer corresponding to an antenna pattern is arranged, and the second insulating layer is a layer on which a second wiring layer corresponding to a driving pattern for driving the antenna pattern is arranged. Therefore, the characteristics of the first insulating layer can be different from those of the second insulating layer. Specifically, the dielectric constant of the first insulating layer can be greater than the dielectric constant of the second insulating layer. For example, the dielectric constant of the first insulating layer can meet the range of 9 to 15 (@10GHz).

[0153] Therefore, this embodiment allows the dielectric constant of the first insulating layer on which the first wiring layer corresponding to the antenna pattern is arranged to be 9 or more, thereby reducing the size of the antenna pattern. As a result, this embodiment can significantly reduce the size of the circuit board and the semiconductor package including the circuit board.

[0154] In addition, this embodiment allows the dielectric constant of the first insulating layer to be 15 or less, so that the first insulating layer has a certain level of rigidity or greater and a certain level of dielectric loss or less. Thus, this embodiment can solve the problem of the circuit board being significantly bent in a specific direction due to the first insulating layer. This embodiment can allow the semiconductor device installed in the semiconductor package including the semiconductor device to operate stably. Thus, this embodiment can improve the operating characteristics of electronic products and / or servers using the semiconductor package and further enhance operational reliability.

[0155] Furthermore, the properties of the second resin of the second insulating layer may differ from those of the first resin of the first insulating layer. Preferably, the dielectric constant of the second resin of the second insulating layer may be less than the dielectric constant of the first resin of the first insulating layer. Furthermore, the properties of the second filler of the second insulating layer may differ from those of the first filler of the first insulating layer. Preferably, the dielectric loss of the second filler of the second insulating layer may be greater than the dielectric loss of the first filler of the first insulating layer. This can be achieved by controlling the properties of the first filler of the first insulating layer so that the dielectric loss of the first insulating layer having a dielectric constant above a specific level is less than a specific level.

[0156] Therefore, this embodiment can allow the first insulating layer and the second insulating layer to have different characteristics according to the functions of the wiring layers respectively arranged on the first insulating layer and the second insulating layer, thereby improving the electrical characteristics of the circuit board and improving the antenna characteristics of the antenna pattern provided on the circuit board. In addition, this embodiment can reduce the size of the antenna pattern provided on the circuit board, thereby miniaturizing the circuit board. In addition, this embodiment can improve the physical and / or electrical reliability of the circuit board, and can enable a semiconductor device mounted on a semiconductor package including the circuit board to operate stably. Thus, this embodiment can improve the operating characteristics of electronic products and / or servers using semiconductor packages, and further improve operational reliability.

[0157] Figure 5 It is shown that Figure 1 Figure 1. A diagram of a semiconductor package on a circuit board.

[0158] refer to Figure 5 , a semiconductor package may include at least one semiconductor device disposed on a circuit board.

[0159] For example, the semiconductor package may be an antenna package.

[0160] In this case, the lower layer (insulating layer and circuit pattern layer) located below the first insulating layer 111 in the circuit board of the semiconductor package can constitute an antenna array layer that radiates antenna signals to the outside, and the upper layer located above the first insulating layer 111 can constitute a driving layer that provides antenna signals to the antenna array layer or processes antenna signals received from the antenna array layer.

[0161] In this case, the characteristics required by the antenna array layer and the drive layer may be different from each other. For example, the antenna array layer may use an insulating layer with a relatively high dielectric constant to enhance the antenna characteristics. In addition, the antenna array layer may be provided with a circuit pattern layer with a relatively low wiring density to provide a more compact antenna device. For example, the drive layer may use an insulating layer with a relatively low dielectric constant to minimize signal transmission loss while enhancing signal processing characteristics. In addition, the drive layer may be provided with a circuit pattern layer with a relatively high wiring density.

[0162] Meanwhile, the semiconductor package may include a first connection portion 210 and a second connection portion 220. The first connection portion 210 and the second connection portion 220 may refer to solder balls, but are not limited thereto.

[0163] The first semiconductor device 230 may be disposed on the first connection portion 210. The terminal 235 of the first semiconductor device 230 may be electrically coupled to the circuit board through the first connection portion 210.

[0164] The second semiconductor device 240 may be disposed on the second connection portion 220. A terminal 245 of the second semiconductor device 240 may be electrically coupled to the circuit board through the second connection portion 220.

[0165] Furthermore, the first semiconductor device 230 may be a driver device. For example, if the semiconductor package is an antenna package, the first semiconductor device 230 may be a driver device for driving the antenna package. The first semiconductor device 230 may provide a transmission signal to the antenna array layer, allowing the antenna signal to be transmitted externally. The first semiconductor device 230 may receive a reception signal from the antenna array layer and process and analyze the signal transmitted externally via the transmission signal.

[0166] In addition, the second semiconductor device 240 may be a device for supporting the operation of the first semiconductor device 230. For example, the second semiconductor device 240 may include a resistor, a capacitor, an inductor, and the like.

[0167] On the other hand, when the circuit board having the above-mentioned features of the present invention is used in IT equipment or household appliances such as smart phones, server computers, televisions, etc., it can stably perform functions such as signal transmission or power supply. For example, when the circuit board having the features of the present invention performs the semiconductor packaging function, the circuit board can safely protect the semiconductor chip from external moisture or pollutants, or alternatively, it can solve the problems of leakage current, electrical short circuit between terminals, and electrical open circuit of terminals provided to the semiconductor chip. In addition, when responsible for the function of signal transmission, it is possible to solve the noise problem. Thus, the circuit board having the above-mentioned features of the present invention can maintain the stable function of IT equipment or household appliances, so that the entire product and circuit board to which the present invention is applied can achieve functional unification or technical linkage with each other.

[0168] When a circuit board having the features described above is used in transportation equipment such as vehicles, it can resolve issues with signal distortion transmitted to the transportation equipment. Alternatively, it can further enhance the safety of the transportation equipment by externally and securely protecting the semiconductor chip controlling the transportation equipment and resolving issues such as leakage current, electrical shorts between terminals, or electrical opens in the terminals supplied to the semiconductor chip. Thus, the transportation equipment and circuit board employing the present invention can achieve functional integrity or technical linkage with each other.

[0169] The features, structures, effects, etc. described in the above embodiments are included in at least one embodiment and are not necessarily limited to one embodiment. In addition, the features, structures, effects, etc. shown in each embodiment can be combined or modified for other embodiments by a person skilled in the art to which the embodiments relate. Therefore, the content related to such combinations and modifications should be interpreted as included within the scope of the embodiments.

[0170] The description focuses on the embodiment, but it is merely illustrative and does not limit the embodiment. Those skilled in the art to which the embodiment belongs will appreciate that various modifications and applications not shown above are possible without departing from the basic features of the embodiment. For example, each component specifically shown in the embodiment can be modified and implemented. Furthermore, it should be understood that differences related to such variations and applications are included within the scope of the embodiment defined in the appended claims.

Claims

1. A circuit board, comprising: a first insulating layer; as well as a second insulating layer disposed on the first insulating layer, and wherein the first insulating layer has a first dielectric constant, wherein the second insulating layer has a second dielectric constant smaller than the first dielectric constant, and The first dielectric constant of the first insulating layer satisfies the range of 9 to 15 (@10 GHz).

2. The circuit board according to claim 1, further comprising: a first wiring layer, arranged below the first insulating layer; as well as a second wiring layer disposed above the second insulating layer, and The first wiring layer includes an antenna pattern for radiating an antenna signal toward a lower side of the first insulating layer. 3 . The circuit board according to claim 1 , wherein the dielectric loss of the first insulating layer is in the range of 0.005 to 0.

009.

4. The circuit board according to claim 3, wherein the first insulating layer comprises a first resin and a first filler arranged in the first resin, wherein the second insulating layer comprises a second resin and a second filler arranged in the second resin, and wherein properties of at least one of the first resin and the first filler are different from properties of at least one of the second resin and the second filler. 5 . The circuit board according to claim 4 , wherein a dielectric constant of the first resin of the first insulating layer is different from a dielectric constant of the second resin of the second insulating layer. 6 . The circuit board according to claim 4 , wherein a dielectric constant of the first resin of the first insulating layer is greater than a dielectric constant of the second resin of the second insulating layer. 7 . The circuit board of claim 4 , wherein a dielectric loss of the first filler of the first insulating layer is different from a dielectric loss of the second filler of the second insulating layer. 8 . The circuit board according to claim 7 , wherein a dielectric loss of the first filler of the first insulating layer is smaller than a dielectric loss of the second filler of the second insulating layer.

9. The circuit board according to claim 4, further comprising: a third insulating layer disposed between the first insulating layer and the second insulating layer, and The dielectric constant of the third insulating layer is different from at least one of the dielectric constant of the first insulating layer and the dielectric constant of the second insulating layer. 10 . The circuit board according to claim 8 , wherein a dielectric constant of the third insulating layer is the same as a dielectric constant of any one of the first insulating layer and the second insulating layer.

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