Wafer chemical mechanical polishing equipment and wafer chemical mechanical polishing method

Abstract

The invention provides wafer chemical mechanical polishing equipment and a wafer chemical mechanical polishing method.The wafer chemical mechanical polishing equipment comprises a polishing table, a polishing pad, a trimmer and a carbon detection device, and the trimmer is provided with a diamond disc and used for trimming the polishing pad; the carbon detection device is used for detecting the carbon content of the polishing pad. The carbon detection device is arranged to detect the carbon content of the polishing pad, when the diamond on the trimmer falls on the polishing pad, the carbon detection device can detect the change of the carbon content of the polishing pad in time, and meanwhile, a user can carry out on-off control on the wafer chemical mechanical polishing equipment according to the detection result of the carbon detection device; or an interlocking mechanism is established between the carbon detection device and the polishing head, so that the polishing head is automatically closed when the carbon content exceeds the standard, the wafer is protected from being scratched by the fallen diamond, and the polishing effect of the chemical mechanical polishing process is improved.

Description

Technical Field

[0001] The present invention relates to the field of wafer technology, and in particular to a wafer chemical mechanical polishing device and a wafer chemical mechanical polishing method. Background Art

[0002] This section merely provides background information related to the present disclosure and is not necessarily prior art.

[0003] During the chemical mechanical polishing (CMP) process, the surface morphology and properties of the polishing pad gradually change as it polishes the wafer, affecting the polishing effect and quality. Currently, a dresser (such as a diamond disc dresser) is commonly used to condition the polishing pad surface to restore it to the appropriate roughness, flatness, and pore structure to maintain stable and good polishing performance, ensuring smooth subsequent polishing processes and consistent polishing quality.

[0004] However, diamonds on the diamond discs are prone to abnormal shedding due to interaction with the polishing pad. This situation can have a serious impact on the chemical mechanical polishing process, potentially leading to defects in the macroscopic single crystal process and damaging a large number of wafers. Summary of the Invention

[0005] The present invention aims to at least solve the technical problem that existing wafer chemical mechanical polishing equipment cannot promptly detect diamonds dropped from the diamond dresser. This object is achieved through the following technical solutions:

[0006] A first aspect of the present invention provides a wafer chemical mechanical polishing device, comprising:

[0007] polishing table;

[0008] a polishing pad, disposed on the polishing table;

[0009] a dresser having a diamond disc and used for dressing the polishing pad;

[0010] a carbon detection device for detecting the carbon content of the polishing pad;

[0011] A control device is electrically connected to the carbon detection device.

[0012] The wafer chemical mechanical polishing equipment proposed in the first aspect of the present invention detects the carbon content of the polishing pad by setting a carbon detection device. When the diamond on the dresser falls off onto the polishing pad, the carbon detection device can promptly detect the change in the carbon content of the polishing pad. At the same time, the user can control the start and stop of the wafer chemical mechanical polishing equipment according to the detection results of the carbon detection device.

[0013] In addition, the wafer chemical mechanical polishing equipment according to the present invention may also have the following additional technical features:

[0014] In some embodiments of the present invention, the wafer chemical mechanical polishing equipment further comprises:

[0015] a spray pipe, for spraying polishing liquid on the polishing pad;

[0016] a polishing head, used for carrying a wafer to perform chemical mechanical polishing on the polishing pad;

[0017] In some embodiments of the present invention, the carbon detection device is an infrared carbon detection device.

[0018] In some embodiments of the present invention, along the thickness direction of the polishing pad, the infrared carbon detection device, the dresser and the polishing head are all located on the same side of the polishing pad, and the infrared carbon detection device is configured to detect in a direction toward the side of the polishing pad away from the polishing table.

[0019] In some embodiments of the present invention, the wafer chemical mechanical polishing equipment further includes a cleaning device, wherein the cleaning device is provided with a plurality of nozzles, and the nozzles are configured to spray gas toward the polishing pad for cleaning.

[0020] A second aspect of the present invention provides a wafer chemical mechanical polishing method, which is implemented according to the wafer chemical mechanical polishing device provided in the first aspect of the present invention, comprising the following steps:

[0021] controlling the diamond disc to trim the polishing pad;

[0022] The carbon detection device is controlled to detect the carbon content of the polishing pad.

[0023] determining whether a detection signal of the carbon detection device exceeds a preset carbon content threshold;

[0024] determining that diamond particles exist in the polishing pad based on the detection signal being greater than or equal to the preset carbon content threshold;

[0025] According to the detection signal being smaller than the preset carbon content threshold, it is determined that no diamond particles exist in the polishing pad.

[0026] The wafer chemical mechanical polishing method proposed in the second aspect of the present invention can better protect the wafer during wafer polishing. The method is implemented by a wafer chemical mechanical polishing equipment equipped with a carbon detection device. The carbon detection device detects the carbon content of the polishing pad. When the diamond on the dresser falls off onto the polishing pad, the carbon detection device can promptly detect the change in the carbon content of the polishing pad. At the same time, the user can control the opening and closing of the wafer chemical mechanical polishing equipment according to the detection results of the carbon detection device.

[0027] In some embodiments of the present invention, the wafer chemical mechanical polishing method further comprises the steps of:

[0028] According to the detection signal being greater than or equal to the preset carbon content threshold, the polishing head or the polishing pad is controlled to stop chemical mechanical polishing.

[0029] In some embodiments of the present invention, after the step of controlling the polishing head, the polishing pad and the spray pipe to perform chemical mechanical polishing on the wafer is performed for a first preset time, the step of controlling the diamond disk to trim the polishing pad is performed.

[0030] In some embodiments of the present invention, after the step of controlling the diamond disk to dress the polishing pad is performed for a second preset time period, the step of controlling the carbon detection device to detect the carbon content of the polishing pad is performed.

[0031] In some embodiments of the present invention, after the step of controlling the polishing head or the polishing pad to stop chemical mechanical polishing according to the detection signal exceeding the preset carbon content threshold, the step further includes:

[0032] The polishing pad was air-jet cleaned. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] Various other advantages and benefits will become apparent to those skilled in the art upon reading the detailed description of the preferred embodiment below. The accompanying drawings are for illustration purposes only and are not to be considered as limiting the present invention. The same reference numerals are used throughout the accompanying drawings to denote the same components. In the accompanying drawings:

[0034] Figure 1 Schematically shows a structural diagram of a wafer chemical mechanical polishing device according to an embodiment of the present invention;

[0035] Figure 2 The figure schematically shows a flow chart of a wafer chemical mechanical polishing method according to an embodiment of the present invention;

[0036] The symbols in the accompanying drawings represent the following:

[0037] 100. Wafer chemical mechanical polishing equipment;

[0038] 10. Polishing table; 11. Polishing pad; 12. Spray pipe; 13. Polishing head; 14. Dresser; 15. Carbon detection device; 16. Control device;

[0039] 20. Wafer;

[0040] Figure 1The X direction indicates the thickness direction of the polishing pad 11 . DETAILED DESCRIPTION

[0041] Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present disclosure are shown in the accompanying drawings, it should be understood that the present disclosure can be implemented in various forms and should not be limited by the embodiments described herein. Rather, these embodiments are provided to enable a more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.

[0042] It should be understood that the terms used herein are for the purpose of describing specific example embodiments only and are not intended to be limiting. Unless the context clearly indicates otherwise, the singular forms "one", "an" and "said" as used herein may also be meant to include plural forms. The terms "comprise", "include", "contain" and "have" are inclusive and therefore specify the presence of stated features, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, steps, operations, elements, parts, and / or combinations thereof. The method steps, processes, and operations described herein are not to be construed as necessarily requiring them to be performed in the specific order described or illustrated, unless the order of execution is clearly indicated. It should also be understood that additional or alternative steps may be used.

[0043] Although the terms first, second, third, etc. can be used in the text to describe multiple elements, components, regions, layers and / or sections, these elements, components, regions, layers and / or sections should not be limited by these terms. These terms can only be used to distinguish an element, component, region, layer or section from another region, layer or section. Unless the context clearly indicates otherwise, terms such as "first", "second" and other numerical terms do not imply order or sequence when used in the text. Therefore, the first element, component, region, layer or section discussed below can be referred to as the second element, component, region, layer or section without departing from the teaching of the example embodiments.

[0044] For ease of description, spatially relative terms may be used herein to describe the relationship of one element or feature relative to another element or feature as shown in the figures, such as "inside," "outside," "inside," "outside," "below," "beneath," "above," and the like. Such spatially relative terms are intended to include different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is flipped, an element described as "below" or "below" another element or feature would then be oriented as "above" or "above" another element or feature. Thus, the example term "below" can include both above and below orientations. The device may be otherwise oriented (rotated 90 degrees or in other orientations) and the spatially relative descriptors used herein are interpreted accordingly.

[0045] like Figures 1 to 2 As shown, the first aspect of the present invention proposes a wafer chemical mechanical polishing equipment 100, including a polishing table 10, a polishing pad 11, a spray pipe 12, a polishing head 13, a dresser 14 and a carbon detection device 15, the polishing pad 11 is arranged on the polishing table 10; the spray pipe 12 is used to spray polishing liquid on the polishing pad 11; the polishing head 13 is used to carry the wafer 20 for chemical mechanical polishing on the polishing pad 11; the dresser 14 has a diamond disc and is used to dress the polishing pad 11; the carbon detection device 15 is used to detect the carbon content of the polishing pad 11.

[0046] It can be seen that the wafer chemical mechanical polishing equipment 100 proposed in the first aspect of the present invention detects the carbon content of the polishing pad 11 by setting a carbon detection device 15. When the diamond on the dresser 14 falls off onto the polishing pad 11, the carbon detection device 15 can promptly detect the change in the carbon content of the polishing pad 11. At the same time, the user can control the opening and closing of the wafer chemical mechanical polishing equipment 100 according to the detection result of the carbon detection device 15, or establish an interlocking mechanism between the carbon detection device 15 and the polishing head 13 to achieve automatic closure of the polishing head 13 when the carbon content exceeds the standard, so as to protect the wafer 20 from being scratched by the fallen diamond and improve the polishing effect of the chemical mechanical polishing process.

[0047] For example, the polishing head 13 clamps the wafer 20 and drives the wafer 20 to rotate. The polishing head 13 carries the wafer 20 and applies a certain pressure to the polishing pad 11. The wafer 20 and the polishing pad 11 interact with each other to achieve mechanical polishing. At the same time, the spray head sprays polishing liquid onto the polishing pad 11. After the wafer 20 contacts the polishing liquid, a grinding action occurs between the polishing pad 11 and the wafer 20, achieving chemical mechanical polishing of the wafer 20, thereby improving the flatness and glossiness of the surface of the wafer 20. While the wafer 20 is being polished, the surface morphology and performance of the polishing pad 11 will change during use, and it needs to be trimmed to restore its ideal polishing state. The diamond disc can be used to trim the polishing pad 11. It achieves the trimming operation by interacting with the polishing pad 11. The structures of the polishing table 10, polishing pad 11, spray pipe 12, polishing head 13 and dresser 14 can refer to the existing technology and will not be described in detail here. The carbon detection device 15 can be an infrared carbon detection device 15 or an industrial CT, scanning electron microscope-energy spectrometer, or other equipment to detect the carbon content on the polishing pad 11 through optical detection. After obtaining the detection results, the polishing head 13 or polishing pad 11 can be controlled manually or automatically through an interlocking mechanism to quickly stop the chemical mechanical polishing process after diamond shedding, thereby protecting the wafer 20 from being scratched by diamonds.

[0048] In some embodiments of the present invention, the wafer chemical mechanical polishing equipment 100 further includes a control device 16 , which is electrically connected to the polishing head 13 and the carbon detection device 15 .

[0049] It can be seen that by setting up the control device 16 to control the polishing head 13 according to the detection signal of the carbon detection device 15, it is possible to determine that diamonds have fallen off on the polishing pad 11 when the carbon detection signal abnormally exceeds the standard, thereby quickly interlocking and stopping the rotation of the polishing head 13, so that the chemical mechanical polishing process is suspended to protect the wafer 20 from being scratched by diamonds.

[0050] For example, the control device 16 can be similar to the control device 16 of the existing wafer chemical mechanical polishing apparatus 100, and can be electrically connected to the carbon detection device 15 to implement an interlocking control mechanism. When the control device 16 receives a carbon detection signal from the carbon detection device 15 indicating that the carbon detection signal exceeds the limit, the polishing head 13 stops rotating and is then lifted away from the polishing pad 11 to protect the wafer 20.

[0051] In some embodiments of the present invention, the carbon detection device 15 is an infrared carbon detection device 15 .

[0052] It can be seen that the carbon content on the polishing pad 11 is detected by infrared technology to achieve contactless real-time detection, so that the wafer chemical mechanical polishing equipment 100 can detect in real time whether there are any diamonds detached from the polishing pad 11, and thus control the polishing head 13 according to the detection results to protect the wafer 20 from being scratched.

[0053] Illustratively, the principle of the infrared carbon detection device 15 is to start the infrared carbon detection device 15 and preheat it, select an appropriate scanning mode and parameters, and measure the upper surface of the polishing pad 11. During the scanning process, it is important to maintain the temperature and humidity stable to avoid interference from external light. After obtaining the infrared spectrum of the upper surface of the polishing pad 11, the data needs to be processed to extract the infrared absorption peak corresponding to the carbon element in the sample. The carbon element will appear as a relatively obvious peak in the infrared spectrum. By comparing the infrared spectrum of the polishing pad 11 when it is not working, the peak position corresponding to the carbon element can be confirmed. Then, the carbon content is calculated based on the intensity and width of the peak.

[0054] In some embodiments of the present invention, along the thickness direction of the polishing pad 11, the infrared carbon detection device 15, the dresser 14 and the polishing head 13 are all located on the same side of the polishing pad 11, and the infrared carbon detection device 15 is configured to detect in a direction toward the side of the polishing pad 11 away from the polishing table 10.

[0055] It can be seen that by locating the infrared carbon detection device 15, the dresser 14 and the polishing head 13 on the same side of the polishing pad 11, the infrared carbon detection device 15 can be directed toward the side of the polishing pad 11 away from the polishing table 10, that is, the side where the polishing pad 11 contacts the wafer 20, to detect this side, thereby realizing the function of alarming and controlling the polishing head 13 to pause when the carbon content exceeds the standard.

[0056] In some embodiments of the present invention, the wafer chemical mechanical polishing apparatus 100 further includes a cleaning device, which is provided with a plurality of nozzles configured to spray gas toward the polishing pad 11 for cleaning.

[0057] It can be seen that by setting up a cleaning device, when there are detached diamonds on the polishing pad 11, the polishing pad 11 is cleaned by jet blowing to clean off dust, impurities, diamonds, etc. on the polishing pad 11, so that the upper surface of the polishing pad 11 is clean and tidy, thereby preventing the wafer 20 from being scratched due to contact with the polishing pad 11.

[0058] For example, the cleaning device can use nitrogen purging. Nitrogen is an inert gas and will not affect the polishing environment of the wafer 20. By setting up multiple nozzles and setting the spray angle of the nozzle to a fan shape, the nitrogen is blown away by the nozzle, thereby increasing the coverage range of the purge and thus improving the purge effect.

[0059] A second aspect of the present invention provides a method for chemical mechanical polishing of a wafer 20, which is implemented using the wafer chemical mechanical polishing apparatus 100 provided in the first aspect of the present invention, and includes the following steps:

[0060] Controlling the polishing head 13, the polishing pad 11 and the spray pipe 12 to perform chemical mechanical polishing on the wafer 20;

[0061] Controlling the diamond disc to trim the polishing pad 11;

[0062] Controlling the carbon detection device 15 to detect the carbon content of the polishing pad 11;

[0063] Determining whether the detection signal of the carbon detection device 15 exceeds a preset carbon content threshold;

[0064] Determining that diamond particles exist on the polishing pad 11 based on the detection signal being greater than or equal to a preset carbon content threshold;

[0065] According to the detection signal being less than the preset carbon content threshold, it is determined that no diamond particles exist in the polishing pad 11 .

[0066] It can be seen that the chemical mechanical polishing method for wafer 20 proposed in the second aspect of the present invention can better protect wafer 20 when polishing wafer 20. The method is implemented by a wafer chemical mechanical polishing equipment 100 equipped with a carbon detection device 15. The carbon detection device 15 detects the carbon content of the polishing pad 11. When the diamond on the dresser 14 falls off onto the polishing pad 11, the carbon detection device 15 can promptly detect the change in the carbon content of the polishing pad 11. At the same time, the user can control the opening and closing of the wafer chemical mechanical polishing equipment 100 according to the detection result of the carbon detection device 15, or establish an interlocking mechanism between the carbon detection device 15 and the polishing head 13 to achieve automatic closure of the polishing head 13 when the carbon content exceeds the standard, so as to protect the wafer 20 from being scratched by the fallen diamond and improve the polishing effect of the chemical mechanical polishing process.

[0067] For example, the polishing head 13 clamps the wafer 20 and drives the wafer 20 to rotate. The polishing head 13 carries the wafer 20 and applies a certain pressure to the polishing pad 11. The wafer 20 and the polishing pad 11 interact with each other to achieve mechanical polishing. At the same time, the spray head sprays polishing liquid onto the polishing pad 11. After the wafer 20 contacts the polishing liquid, a grinding action occurs between the polishing pad 11 and the wafer 20, achieving chemical mechanical polishing of the wafer 20, thereby improving the flatness and glossiness of the surface of the wafer 20. While the wafer 20 is being polished, the surface morphology and performance of the polishing pad 11 will change during use, and it needs to be trimmed to restore its ideal polishing state. The diamond disc can be used to trim the polishing pad 11. It achieves the trimming operation by interacting with the polishing pad 11. The structures of the polishing table 10, polishing pad 11, spray pipe 12, polishing head 13 and dresser 14 can refer to the existing technology and will not be described in detail here. The carbon detection device 15 can be an infrared carbon detection device 15 or an industrial CT, scanning electron microscope-energy spectrometer, or other equipment to detect the carbon content on the polishing pad 11 through optical detection. After obtaining the detection results, the polishing head 13 or polishing pad 11 can be controlled manually or automatically through an interlocking mechanism to quickly stop the chemical mechanical polishing process after diamond shedding, thereby protecting the wafer 20 from being scratched by diamonds.

[0068] In some embodiments of the present invention, the chemical mechanical polishing method of the wafer 20 further includes the steps of:

[0069] When the detection signal exceeds a preset carbon content threshold, the polishing head 13 or the polishing pad 11 is controlled to stop chemical mechanical polishing.

[0070] It can be seen that when there are diamonds dropped by the dresser 14 on the polishing pad 11, the carbon content will increase rapidly. At this time, the carbon detection device 15 can quickly detect that the carbon content on the polishing pad 11 exceeds the standard. The control device 16 controls the polishing head 13 to suspend work according to the carbon content exceeding the standard signal of the carbon detection device 15, and controls the spray pipe 12 to suspend work, which can interrupt the chemical mechanical polishing process, thereby timely protecting the wafer 20 being polished to prevent it from being scratched by diamonds.

[0071] For example, the preset carbon content threshold can be obtained experimentally. Specifically, the preset carbon content threshold can be set based on the carbon content detected when a diamond falls on the polishing pad 11. When the detection signal of the carbon detection device 15 is within a first detection range (0 to the preset carbon content threshold), the wafer chemical mechanical polishing apparatus 100 is controlled to operate normally. When the detection signal of the carbon detection device 15 is within a second detection range (greater than the preset carbon content threshold), the wafer chemical mechanical polishing apparatus 100 is controlled to suspend operation.

[0072] In some embodiments of the present invention, after controlling the polishing head 13, polishing pad 11 and spray pipe 12 to perform chemical mechanical polishing on the wafer 20 for a first preset time, controlling the diamond disk to trim the polishing pad 11 is performed.

[0073] It can be seen that after controlling the polishing head 13, the polishing pad 11 and the spray pipe 12 to perform chemical mechanical polishing on the wafer 20 for the first preset time, the diamond disc is controlled to trim the polishing pad 11, so that the dresser 14 does not need to work continuously, thereby saving energy and increasing the life of the dresser 14.

[0074] For example, the first preset time length can be set based on polishing experience or prior experiments. For example, after polishing for a certain period of time, if obvious defects appear on the surface of the polishing pad 11, resulting in a decrease in the polishing effect, the dresser 14 is controlled to dress the polishing pad 11 to improve the polishing effect.

[0075] In some embodiments of the present invention, after the step of controlling the diamond disk to dress the polishing pad 11 for a second preset time period, the step of controlling the carbon detection device 15 to detect the carbon content of the polishing pad 11 is performed.

[0076] It can be seen that after the step of controlling the diamond disc to trim the polishing pad 11 for the second preset time, the carbon detection device 15 is controlled to detect the carbon content of the polishing pad 11, so that the carbon detection device 15 does not need to work continuously, thereby saving energy and increasing the life of the carbon detection device 15.

[0077] For example, the second preset time length can be set based on polishing experience or prior experiments. For example, after polishing for a certain period of time, if the contact time between the dresser 14 and the polishing pad 11 is long enough, there is a hidden danger that the diamond on the dresser 14 is easy to fall off. The carbon detection device 15 is controlled to detect the carbon content of the polishing pad 11 to promptly detect whether there is any diamond falling off, thereby quickly suspending the chemical mechanical polishing process to protect the wafer 20 from being scratched.

[0078] In some embodiments of the present invention, after the step of controlling the polishing head 13 or the polishing pad 11 to stop chemical mechanical polishing according to the detection signal exceeding the preset carbon content threshold, the following steps are further included:

[0079] The polishing pad 11 is air-jet cleaned.

[0080] It can be seen that by jet cleaning the polishing pad 11, when there are detached diamonds on the polishing pad 11, the polishing pad 11 is jet purged and cleaned, so that the upper surface of the polishing pad 11 is clean and tidy, thereby preventing the wafer 20 from being scratched by contact with the polishing pad 11.

[0081] For example, a cleaning device using nitrogen or other inert gases can be used to jet clean the polishing pad 11 to remove dust, impurities, diamonds, etc. on the polishing pad 11. Nitrogen is an inert gas and will not affect the polishing environment of the wafer 20. By setting up multiple nozzles and setting the spray angle of the nozzle to a fan shape, the nitrogen is blown away by the nozzle, thereby increasing the coverage range of the purge and thus improving the purge effect.

[0082] The above are merely preferred embodiments of the present invention, but the scope of protection of the present invention is not limited thereto. Any changes or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in the present invention should be included in the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be based on the scope of protection of the claims.

Claims

1. A wafer chemical mechanical polishing device, characterized in that: include: polishing table; a polishing pad, disposed on the polishing table; a dresser having a diamond disc and used for dressing the polishing pad; a carbon detection device for detecting the carbon content of the polishing pad; A control device is electrically connected to the carbon detection device.

2. The wafer chemical mechanical polishing equipment according to claim 1, characterized in that: The wafer chemical mechanical polishing equipment also includes: a spray pipe, for spraying polishing liquid on the polishing pad; The polishing head is used for carrying the wafer to perform chemical mechanical polishing on the polishing pad.

3. The wafer chemical mechanical polishing equipment according to claim 1 or 2, characterized in that: The carbon detection device is an infrared carbon detection device.

4. The wafer chemical mechanical polishing equipment according to claim 3, characterized in that: Along the thickness direction of the polishing pad, the infrared carbon detection device, the dresser and the polishing head are all located on the same side of the polishing pad, and the infrared carbon detection device is configured to detect toward a side of the polishing pad away from the polishing table.

5. The wafer chemical mechanical polishing equipment according to any one of claims 1 to 4, characterized in that: The wafer chemical mechanical polishing equipment further includes a cleaning device, wherein the cleaning device is provided with a plurality of nozzles, and the nozzles are configured to spray gas toward the polishing pad for cleaning.

6. A wafer chemical mechanical polishing method, implemented according to the wafer chemical mechanical polishing apparatus according to any one of claims 1 to 5, characterized in that: The following steps are involved: controlling the diamond disc to trim the polishing pad; controlling the carbon detection device to detect the carbon content of the polishing pad; determining whether a detection signal of the carbon detection device exceeds a preset carbon content threshold; determining that diamond particles exist in the polishing pad based on the detection signal being greater than or equal to the preset carbon content threshold; According to the detection signal being smaller than the preset carbon content threshold, it is determined that no diamond particles exist in the polishing pad.

7. The wafer chemical mechanical polishing method according to claim 6, characterized in that: The wafer chemical mechanical polishing method further comprises the steps of: According to the detection signal being greater than or equal to the preset carbon content threshold, the polishing head or the polishing pad is controlled to stop chemical mechanical polishing.

8. The wafer chemical mechanical polishing method according to claim 6, characterized in that: After the step of controlling the polishing head, the polishing pad and the spray pipe to perform chemical mechanical polishing on the wafer is performed for a first preset time, the step of controlling the diamond disk to dress the polishing pad is performed.

9. The wafer chemical mechanical polishing method according to claim 6, characterized in that: After the step of controlling the diamond disk to dress the polishing pad is performed for a second preset time, the step of controlling the carbon detection device to detect the carbon content of the polishing pad is performed.

10. The wafer chemical mechanical polishing method according to claim 7, characterized in that: After the step of controlling the polishing head or the polishing pad to stop chemical mechanical polishing according to the detection signal exceeding the preset carbon content threshold, the step further includes: The polishing pad was air-jet cleaned.

Images