Single-silver LOW-E glass and preparation method thereof

Abstract

The invention discloses single-silver LOW-E glass and a preparation method, and relates to the technical field of coated glass. The single-silver LOW-E glass provided by the invention comprises glass substrates which are arranged in a laminated manner, the coating layer comprises a first dielectric layer, a second dielectric layer, a functional layer, a barrier protection layer, a third dielectric layer, a fourth dielectric layer and a top dielectric layer which are stacked in sequence; wherein the top dielectric layer is arranged away from one side of the glass substrate. The single-silver low-emissivity glass provided by the invention is reasonable in film system structure, relatively good in binding force, stable in film layer structure, free from the defects of cracking, demolding and the like, high in machinability, and relatively high in visible light transmittance and relatively low in emissivity at the same time.

Description

Technical Field

[0001] The present invention relates to the technical field of coated glass, and in particular to single silver Low-E glass and a preparation method thereof. Background Art

[0002] Single-silver low-emissivity glass is a special glass with a layer of infrared-reflecting material deposited on the glass surface. This allows visible light from sunlight to pass through, while acting like an infrared reflector, excluding infrared rays from sunlight while reflecting back secondary radiant heat. Using single-silver low-emissivity glass can achieve sunlight control, energy savings, heat regulation, and environmental improvements. To achieve a good U-value and selectivity factor (Lsg), existing single-silver Low-E glass must increase the thickness of the silver layer to reduce the emissivity of the glass film. However, this increases visible light reflectivity and creates an interference color on the glass's exterior, affecting its usability. While double-silver / triple-silver Low-E glass does not exhibit these issues, its production cost is significantly higher than single-silver Low-E glass. Summary of the Invention

[0003] The main purpose of the present invention is to develop a single silver LOW-E glass with a better coating layer structure, high visible light transmittance and low emissivity, and low production cost.

[0004] To achieve the above objectives, the present invention provides a single-silver Low-E glass, comprising a stacked glass substrate; and a coating layer, wherein the coating layer comprises a first dielectric layer, a second dielectric layer, a functional layer, a barrier protective layer, a third dielectric layer, a fourth dielectric layer, and a top dielectric layer stacked in sequence; wherein the top dielectric layer is disposed on a side facing away from the glass substrate.

[0005] In one embodiment, the first dielectric layer and the fourth dielectric layer include SiN x 、SiAlN x 、SiAlZrN x 、SiZrN x At least one of.

[0006] In one embodiment, the second dielectric layer and the third dielectric layer include ZnO x 、SnO x 、ZnSnO x 、ZnAlO x 、AlO x 、ZnAlO x At least one of.

[0007] In one embodiment, the barrier layer comprises NiCr, Ni, Cr, NiN x、CrN x 、NiCrN x 、NiCrO x At least one of.

[0008] In one embodiment, the functional layer comprises Ag, Au, Cu, AgN x 、AuN x 、CuN x 、AgAu x 、AgCu x At least one of.

[0009] In one embodiment, the top dielectric layer comprises ZrO x .

[0010] In one embodiment, the first dielectric layer comprises SiAlN x layer and SiAlZrN x layer, the SiAlZrN x The layer is attached to the second dielectric layer; wherein the SiAlZrN x The target material of the layer has the following elements by mass percentage: Al: 0 wt% to 10 wt%; Zr: 10 wt% to 50 wt%; Si: 50 wt% to 90 wt%; and / or, for preparing the SiAlN x The element mass percentage composition of the layer target material is: Al: 10wt% to 50wt%; Si: 50wt% to 90wt%.

[0011] In one embodiment, the fourth dielectric layer comprises SiAlN x layer and SiAlZrN x layer, the SiAlZrNx layer is attached to the third dielectric layer; wherein, for preparing the SiAlZrN x The target material of the layer has the following elements by mass percentage: Al: 0 wt% to 10 wt%; Zr: 10 wt% to 50 wt%; Si: 50 wt% to 90 wt%; and / or, for preparing the SiAlN x The element mass percentage composition of the layer target material is: Al: 10wt% to 50wt%; Si: 50wt% to 90wt%.

[0012] In one embodiment, the coating layer further includes a bottom dielectric layer, and the bottom dielectric layer is disposed between the glass substrate and the first dielectric layer.

[0013] In one embodiment, the bottom dielectric layer comprises SiO x .

[0014] In one embodiment, the thickness of the glass substrate is 2 mm to 19 mm; and / or the thickness of the bottom dielectric layer is 5 nm to 30 nm; and / or the thickness of the second dielectric layer is 5 nm to 15 nm; and / or the thickness of the functional layer is 8 nm to 15 nm; and / or the thickness of the blocking protective layer is 0.5 nm to 3 nm; and / or the thickness of the third dielectric layer is 5 nm to 15 nm; and / or the thickness of the top dielectric layer is 2 nm to 6 nm.

[0015] In one embodiment, the first dielectric layer comprises SiAlN x layer and SiAlZrN x wherein the thickness of the SiAlNx layer is 10nm to 50nm, and the SiAlZrN x The thickness of the layer is 3 nm to 15 nm.

[0016] In one embodiment, the fourth dielectric layer includes a SiAlNx layer and a SiAlZrNx layer stacked in sequence; wherein the thickness of the SiAlNx layer is 10 nm to 50 nm, and the thickness of the SiAlZrNx layer is 3 nm to 15 nm.

[0017] The present invention also provides a method for preparing the single silver LOW-E glass, comprising the following steps:

[0018] S1, clean the glass substrate, dry it and place it in the magnetron sputtering area;

[0019] S2. Sputtering and depositing a bottom dielectric layer, a first dielectric layer, a second dielectric layer, a functional layer, a barrier protective layer, a third dielectric layer, a fourth dielectric layer and a top dielectric layer on the surface of the glass substrate treated in step S1 in sequence to obtain the single silver Low-E glass.

[0020] In one embodiment, in step S2, when magnetron sputtering is performed on the bottom dielectric layer, the first dielectric layer, the second dielectric layer, the third dielectric layer, the fourth dielectric layer and the top dielectric layer, a combination of a pulsed DC power supply and a planar cathode target is used, and the power of the pulsed DC power supply is 0.5KW to 30KW; in step S2, when magnetron sputtering is performed on the functional layer and the blocking protective layer, a combination of a medium frequency power supply and a rotating cathode target is used, and the power of the medium frequency power supply is 10KW to 80KW.

[0021] The technical solution of the present invention designs a single silver LOW-E glass. Through structural optimization, specifically, dielectric composite layers of silicon aluminum nitride and silicon zirconium aluminum nitride containing a specific element ratio are provided on both sides of the functional layer, so that the visible light transmittance of the single silver low-emissivity glass in this application is between 70% and 88% and the emissivity is less than 0.06. The single silver low-emissivity glass in this application has a lower emissivity than the existing single silver LOW-E glass with the same visible light transmittance, and is significantly cheaper to process than the existing double silver or triple silver LOW-E glass with the same visible light transmittance, and is more worthy of popularization and promotion. In addition, the film system structure adopted in the present invention is reasonable, has relatively good bonding strength, and the film layer structure is stable, will not have defects such as cracking and demolding, and has strong machinability. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the structures shown in these drawings without paying any creative work.

[0023] Figure 1 Schematic diagram of the film layer structure of single silver Low-E glass in an embodiment of the present invention;

[0024] The purpose, features and advantages of the present invention will be further described with reference to the accompanying drawings and in conjunction with the embodiments. DETAILED DESCRIPTION

[0025] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making any creative efforts shall fall within the scope of protection of the present invention.

[0026] It should be noted that if the embodiments of the present invention involve directional indications (such as up, down, left, right, front, back, etc.), the directional indications are only used to explain the relative position relationship, movement status, etc. between the components under a certain specific posture. If the specific posture changes, the directional indications will also change accordingly.

[0027] In addition, if there are descriptions involving "first", "second", etc. in the embodiments of the present invention, the descriptions of "first", "second", etc. are only for descriptive purposes and cannot be understood as indicating or suggesting their relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features limited to "first" and "second" may explicitly or implicitly include at least one of such features. In addition, if "and / or" or "and / or" appears in the full text, its meaning includes three parallel solutions. Taking "A and / or B" as an example, it includes solution A, solution B, or solutions that satisfy both A and B. In addition, the technical solutions between the various embodiments can be combined with each other, but it must be based on the ability of ordinary technicians in this field to implement. When the combination of technical solutions is mutually contradictory or cannot be implemented, it should be deemed that such a combination of technical solutions does not exist and is not within the scope of protection required by the present invention.

[0028] The technical problem addressed by this application is that, in order to achieve a good U-value and selectivity coefficient (Lsg), existing single-silver Low-E glass must increase the thickness of the silver layer in the film to reduce the emissivity of the glass film. However, this increases the visible light reflectivity and causes the glass's color to appear interfering, thus affecting its usability. While double-silver / triple-silver Low-E glass does not exhibit these issues, its production cost is significantly higher than that of single-silver Low-E glass. It should be noted that, based on the applicant's market research, the emissivity of traditional single-silver Low-E glass in the coated glass industry currently ranges from 0.08 to 0.15, and its visible light transmittance ranges from 70% to 80%. The processing fee is generally 5 to 10 yuan per square meter. However, the processing cost of traditional double-silver or triple-silver Low-E glass with an emissivity of less than 0.06 and a visible light transmittance of 40% to 80% is no less than 13 yuan. Therefore, it is necessary to develop a Low-E glass with improved performance and lower production costs.

[0029] In order to solve the above technical problems, the present application proposes a single silver Low-E glass, which includes a stacked glass substrate; and a coating layer, wherein the coating layer includes a first dielectric layer, a second dielectric layer, a functional layer, a barrier protective layer, a third dielectric layer, a fourth dielectric layer and a top dielectric layer stacked in sequence; wherein the top dielectric layer is arranged on a side away from the glass substrate.

[0030] It should be noted that the LOW-E glass in the present application adopts a single silver structure, which has significantly fewer coating layers than a double silver or triple silver structure. Through the design of the first dielectric layer and the fourth dielectric layer, a silicon zirconium aluminum nitride layer is further added on the basis of the existing silicon aluminum nitride layer. The silicon zirconium aluminum nitride layer in the present application is obtained by doping zirconium into a silicon aluminum nitride target and magnetron sputtering. The silicon zirconium aluminum nitride layer in the first dielectric layer and the fourth dielectric layer has a higher refractive index for visible light, which can improve the visible light transmittance of the coating layer, so that the functional layer can be further increased in thickness, thereby making the emissivity of the LOW-E glass in the present application lower, achieving a perfect balance between high transmittance and extremely low emissivity.

[0031] It should also be noted that the second dielectric layer in this application acts as a seed layer to promote the formation of a continuous and low-defect coating on the functional layer during magnetron sputtering and reduce grain boundary scattering, while the third dielectric layer acts as an interface coupling layer to play a protective buffer role, preventing oxygen from corroding the functional layer and releasing the thermal stress between the film layers during high-temperature annealing.

[0032] In one embodiment, the first dielectric layer and the fourth dielectric layer include SiN x 、SiAlN x 、SiAlZrN x 、SiZrN x At least one of.

[0033] In one embodiment, the second dielectric layer and the third dielectric layer include ZnO x 、SnO x 、ZnSnO x 、ZnAlO x 、AlO x 、ZnAlO x At least one of.

[0034] In one embodiment, the barrier protection layer comprises NiCr, Ni, Cr, NiN x 、CrN x 、NiCrN x 、NiCrO x At least one of.

[0035] In one embodiment, the top dielectric layer comprises ZrO x It should be noted that the top dielectric layer in this application is a zirconium oxide layer, which has high hardness and chemical stability and plays a good protective role for the coated glass.

[0036] In one embodiment, the glass substrate is an ultra-white glass substrate with a visible light transmittance of 88% to 90%.

[0037] In one embodiment, the first dielectric layer comprises SiAlN x layer and SiAlZrN x layer, the SiAlZrN x The layer is attached to the second dielectric layer; wherein the SiAlZrN x The element mass percentage composition of the target material of the layer is: Al: 0wt%~10wt%; Zr: 10wt%~50wt%; Si: 50wt%~90wt%; and / or, the element mass percentage composition of the target material used to prepare the SiAlNx layer is: Al: 10wt%~50wt%; Si: 50wt%~90wt%.

[0038] It should be noted that the first dielectric layer of the present application further adds a silicon zirconium aluminum nitride layer on the basis of the existing silicon aluminum nitride layer, which is obtained by doping zirconium in the silicon aluminum nitride target and magnetron sputtering; in the subsequent tempering or semi-tempered process of the coated glass, the nitrogen-silicon (N-Si) bonds and nitrogen-zirconium (N-Zr) bonds of the silicon zirconium aluminum nitride layer will inhibit each other from diffusion. This mutual inhibition effect makes the silicon zirconium structure in the film layer more stable at high temperatures and less prone to structural damage or performance degradation; secondly, silicon zirconium aluminum nitride has a higher refractive index than silicon aluminum nitride, and the higher refractive index helps to improve the visible light transmittance of the film layer, so that the designer can further reduce the emissivity by increasing the thickness of the silver layer without sacrificing the transmittance, thereby achieving a perfect balance between high transmittance and extremely low emissivity.

[0039] It should also be noted that in this application, the method for preparing SiAlZrN x The silicon, aluminum and zirconium in the target material of the layer are precisely controlled in a specific ratio, so that the coated glass produced has a balance of optical properties and structural stability.

[0040] In one embodiment, the fourth dielectric layer comprises SiAlN x layer and SiAlZrN x layer, the SiAlZrNx layer is attached to the third dielectric layer; wherein, for preparing the SiAlZrN x The target material of the layer has the following elements by mass percentage: Al: 0 wt% to 10 wt%; Zr: 10 wt% to 50 wt%; Si: 50 wt% to 90 wt%; and / or, for preparing the SiAlN x The target material of the layer has the following element mass percentage compositions: Al: 10 wt% to 50 wt%; Si: 50 wt% to 90 wt%.

[0041] It should be noted that the fourth dielectric layer is made of the same SiAlN as the first dielectric layer. xlayer and SiAlZrN x The combination of layers can be different in thickness and element ratio, but considering that the thermal stress on both sides of the functional layer should be balanced, the fourth dielectric layer and the SiAlN in the first dielectric layer x layer and SiAlZrN x The thickness of the layers and the ratio of elements are the same.

[0042] In one embodiment, the coating layer further includes a bottom dielectric layer, and the bottom dielectric layer is disposed between the glass substrate and the first dielectric layer.

[0043] In a preferred embodiment, the bottom dielectric layer comprises SiO x .

[0044] It should be noted that the underlying dielectric layer serves as the interface between the glass substrate and the coating layer. During the high-temperature tempering process of the coated glass, the dense structure of the silicon oxide layer prevents sodium ions from diffusing from the glass substrate and affecting other dielectric layers or functional layers. Furthermore, the silicon oxide layer has a high lattice fit with the glass substrate layer, and its adhesion to the glass substrate layer is higher than that of the silicon zirconium aluminum nitride layer. Furthermore, the lattice mismatch between the glass and silicon zirconium aluminum nitride layers is as high as 18%. Without an interface layer to act as a buffer, the coating layer is very likely to fall off during the high-temperature tempering process.

[0045] In one embodiment, the thickness of the glass substrate is 2 mm to 19 mm.

[0046] In one embodiment, the thickness of the bottom dielectric layer is 5 nm to 30 nm.

[0047] In one embodiment, the thickness of the second dielectric layer is 5 nm to 15 nm;

[0048] In one embodiment, the thickness of the functional layer is 8 nm to 15 nm;

[0049] In one embodiment, the thickness of the blocking protective layer is 0.5 nm to 3 nm;

[0050] In one embodiment, the thickness of the third dielectric layer is 5 nm to 15 nm;

[0051] In one embodiment, the thickness of the top dielectric layer is 2 nm to 6 nm.

[0052] In one embodiment, the first dielectric layer comprises SiAlN x layer and SiAlZrN x wherein the thickness of the SiAlNx layer is 10nm to 50nm, and the SiAlZrNx The thickness of the layer is 3 nm to 15 nm.

[0053] In one embodiment, the fourth dielectric layer includes a SiAlNx layer and a SiAlZrNx layer stacked in sequence; wherein the thickness of the SiAlNx layer is 10 nm to 50 nm, and the thickness of the SiAlZrNx layer is 3 nm to 15 nm.

[0054] It should be noted that SiAlZrN x When the layer thickness is too low, the interface bonding is poor and a continuous ZrN nanocrystalline network cannot be formed; SiAlZrN x When the layer thickness is too high, it is easy to cause thermal mismatch of the barrier layer, which may cause cracking or peeling of the coating layer.

[0055] The present invention also provides a method for preparing the single silver LOW-E glass, comprising the following steps:

[0056] S1, clean the glass substrate, dry it and place it in the magnetron sputtering area;

[0057] S2. Sputtering and depositing a bottom dielectric layer, a first dielectric layer, a second dielectric layer, a functional layer, a barrier protective layer, a third dielectric layer, a fourth dielectric layer and a top dielectric layer on the surface of the glass substrate treated in step S1 in sequence to obtain the single silver Low-E glass.

[0058] In one embodiment, in step S2, when magnetron sputtering is performed on the bottom dielectric layer, the first dielectric layer, the second dielectric layer, the third dielectric layer, the fourth dielectric layer and the top dielectric layer, a combination of a pulsed DC power supply and a planar cathode target is used, and the power of the pulsed DC power supply is 0.5KW to 30KW; and / or, in step S2, when magnetron sputtering is performed on the functional layer and the blocking protective layer, a combination of a medium frequency power supply and a rotating cathode target is used, and the power of the medium frequency power supply is 10KW to 80KW.

[0059] In one embodiment, the target material used to prepare the barrier protective layer is a nickel-chromium alloy with a nickel mass ratio of 10 wt % to 90 wt % and a chromium mass ratio of 10 wt % to 90 wt %, and pure argon gas is used for magnetron sputtering.

[0060] In one embodiment, during the preparation of the first dielectric layer and the fourth dielectric layer, when magnetron sputtering the silicon aluminum nitride target, the gases used are argon and nitrogen with a volume ratio of 700 sccm:700 sccm; when magnetron sputtering the silicon zirconium aluminum nitride target, the gases used are argon and nitrogen with a volume ratio of 700 sccm:700 sccm; during the preparation of the second dielectric layer and the third dielectric layer, the gases used are argon and oxygen with a volume ratio of 500 sccm:900 sccm.

[0061] In one embodiment, the target material used to prepare the second dielectric layer and the third dielectric layer is a zinc-aluminum alloy with a zinc mass ratio of 50 wt% to 90 wt% and an aluminum mass ratio of 10 wt% to 50 wt%, and pure argon gas is used for magnetron sputtering.

[0062] In one embodiment, when magnetron sputtering is performed in step S2, the gas pressure is controlled to be 3.5*10^ -3 mbar~4*10^ -3 mbar.

[0063] The present invention is further described below by means of specific examples:

[0064] The raw materials used in the embodiments of the present invention are all commercially available, and the present invention does not impose any restrictions on the sources of the raw materials.

[0065] Example 1

[0066] Reference Figure 1 The structure of the single silver Low-E glass in Example 1 includes a stacked glass substrate and a coating layer; wherein the coating layer includes a bottom dielectric layer, a first dielectric layer, a second dielectric layer, a functional layer, a barrier protective layer, a third dielectric layer, a fourth dielectric layer and a top dielectric layer stacked in sequence, wherein the bottom dielectric layer is bonded to the glass substrate.

[0067] In Example 1, the glass substrate is made of ultra-white glass with a thickness of 6 mm; the bottom dielectric layer is made of a silicon oxide layer with a thickness of 14 nm; the second dielectric layer and the third dielectric layer are both made of zinc oxide layers, the second dielectric layer has a thickness of 15 nm, and the third dielectric layer has a thickness of 9.8 nm; the functional layer is made of a silver layer with a thickness of 11.8 nm; the blocking protective layer is made of a nickel-chromium alloy layer with a thickness of 0.9 nm; and the top dielectric layer is made of a zirconium oxide layer with a thickness of 5.7 nm.

[0068] The first dielectric layer in Example 1 includes a stacked silicon zirconium aluminum nitride layer and a silicon aluminum nitride layer, wherein the silicon aluminum nitride layer is disposed on top of the underlying dielectric layer. The thickness of the silicon aluminum nitride layer is 10 nm, and the thickness of the silicon zirconium aluminum nitride layer is 8.7 nm.

[0069] The fourth dielectric layer in Example 1 includes a stacked silicon zirconium aluminum nitride layer and a silicon aluminum nitride layer, wherein the silicon aluminum nitride layer is disposed in contact with the underlying dielectric layer. The thickness of the silicon aluminum nitride layer is 12.7 nm, and the thickness of the silicon zirconium aluminum nitride layer is 15 nm.

[0070] The method for preparing the single silver Low-E glass in Example 1 comprises the following steps:

[0071] S1, clean the glass substrate, dry it and place it in the magnetron sputtering area;

[0072] S2. Sputtering and depositing a bottom dielectric layer, a first dielectric layer, a second dielectric layer, a functional layer, a barrier protective layer, a third dielectric layer, a fourth dielectric layer and a top dielectric layer on the surface of the glass substrate treated in step S1 in sequence to obtain the single silver Low-E glass.

[0073] It should be noted that in step S2, when magnetron sputtering the silicon oxide layer, the silicon zirconium aluminum nitride layer, the silicon aluminum nitride layer, the zinc oxide layer, and the zirconium oxide layer, a combination of a pulsed DC power supply and a planar cathode target material is used, and the power of the pulsed DC power supply is 20KW; when magnetron sputtering the silver layer and the nickel-chromium alloy layer, a combination of a medium frequency power supply and a rotating cathode target material is used, and the power of the medium frequency power supply is 60KW; and the sputtering gas pressure of each film layer is 3.5*10^ -3 mbar~4*10^ -3 mbar.

[0074] When preparing the silicon oxide layer, a pure silicon target with a purity of 99% is used, and the sputtering gas is argon and oxygen with a volume ratio of 500 sccm:1000 sccm.

[0075] When preparing the silicon zirconium aluminum nitride layer, a silicon zirconium aluminum alloy target is used with a purity of 99%, of which the mass proportion of silicon is 80wt%, the mass proportion of zirconium is 10wt%, and the mass proportion of aluminum is 10wt%. The sputtering gas is argon and nitrogen with a volume ratio of 700sccm:700sccm.

[0076] When preparing the silicon aluminum nitride layer, a silicon aluminum alloy target is used with a purity of 99%, wherein the silicon mass ratio is 90wt% and the aluminum mass ratio is 10wt%. The sputtering gas is argon and nitrogen with a volume ratio of 700sccm:700sccm.

[0077] When preparing the zinc oxide layer, a pure zinc target with a purity of 99% is used, and the sputtering gas is argon and oxygen with a volume ratio of 500 sccm:900 sccm.

[0078] When preparing the nickel-chromium alloy layer, a nickel-chromium alloy target material with a purity of 99% is used, wherein the mass proportion of nickel is 80wt%, the mass proportion of chromium is 20wt%, and the sputtering gas is pure argon.

[0079] After testing, the single silver Low-E glass prepared in Example 1 has a visible light transmittance of 84% to 85% and an emissivity of 0.06, which meets the design requirements of the film layer.

[0080] The color value and visible light transmittance of the single silver Low-E glass prepared in Example 1 were measured. The single silver Low-E glass prepared in Example 1 was then tempered, and the color value and visible light transmittance after tempering were measured, as shown in Table 1. The tempering parameters included a tempering time of 500 seconds, a tempering temperature of 680°C to 700°C, and a blasting time of 250 seconds.

[0081] Table 1

[0082]

[0083]

[0084] By analyzing Table 1, it can be seen that the single silver LOW-E glass prepared in Example 1 achieves a low emissivity of ε<0.06 and a color stability of ΔE<1.0 after tempering on the basis of a transmittance of 85%, breaking the industry dilemma that high transmittance will inevitably lead to color deviation.

[0085] Example 2

[0086] Reference Figure 1 The structure and preparation process of the single silver Low-E glass in Example 2 are the same as those in Example 1, except that the thickness of each film layer in the single silver Low-E glass in Example 2 is different.

[0087] In Example 2, the glass substrate is made of ultra-white glass with a thickness of 6 mm; the bottom dielectric layer is made of a silicon oxide layer with a thickness of 20 nm; the second dielectric layer and the third dielectric layer are both made of zinc oxide layers, the second dielectric layer has a thickness of 8 nm, and the third dielectric layer has a thickness of 11 nm; the functional layer is made of a silver layer with a thickness of 11 nm; the blocking protective layer is made of a nickel-chromium alloy layer with a thickness of 0.7 nm; and the top dielectric layer is made of a zirconium oxide layer with a thickness of 4 nm.

[0088] The first dielectric layer in Example 2 includes a stacked silicon zirconium aluminum nitride layer and a silicon aluminum nitride layer, wherein the silicon aluminum nitride layer is disposed in contact with the underlying dielectric layer. The thickness of the silicon aluminum nitride layer is 10 nm, and the thickness of the silicon zirconium aluminum nitride layer is 14 nm.

[0089] The fourth dielectric layer in Example 2 includes a stacked silicon zirconium aluminum nitride layer and a silicon aluminum nitride layer, wherein the silicon aluminum nitride layer is disposed in contact with the underlying dielectric layer. The thickness of the silicon aluminum nitride layer is 20 nm, and the thickness of the silicon zirconium aluminum nitride layer is 8 nm.

[0090] After testing, the single silver Low-E glass prepared in Example 2 has a visible light transmittance of 84% to 85% and an emissivity of 0.06, which meets the design requirements of the film layer.

[0091] The color value and visible light transmittance of the single silver LOW-E glass prepared in Example 2 were measured, as shown in Table 2.

[0092] Table 2

[0093]

[0094] The above description is merely an exemplary embodiment of the present invention and does not limit the patent scope of the present invention. Any equivalent structural transformation made by utilizing the contents of the present invention's description and drawings under the technical concept of the present invention, or directly / indirectly applied in other related technical fields, is included in the patent protection scope of the present invention.

Claims

1. A single silver Low-E glass, characterized in that: The single silver LOW-E glass includes glass substrates stacked together; and The coating layer includes a first dielectric layer, a second dielectric layer, a functional layer, a barrier protection layer, a third dielectric layer, a fourth dielectric layer and a top dielectric layer stacked in sequence; wherein the top dielectric layer is arranged on a side away from the glass substrate.

2. The single silver LOW-E glass according to claim 1, characterized in that: The first dielectric layer and the fourth dielectric layer include SiN x 、SiAlN x 、SiAlZrN x 、SiZrN x at least one of; And / or, the second dielectric layer and the third dielectric layer include ZnO x 、SnO x 、ZnSnO x 、ZnAlO x 、AlO x 、ZnAlO x at least one of; And / or, the functional layer includes Ag, Au, Cu, AgN x 、AuN x 、CuN x 、AgAu x 、AgCu x at least one of; And / or, the barrier protection layer comprises NiCr, Ni, Cr, NiN x 、CrN x 、NiCrN x 、NiCrO x at least one of; And / or, the top dielectric layer comprises ZrO x .

3. The single silver LOW-E glass according to claim 1, characterized in that: The first dielectric layer includes SiAlN x layer and SiAlZrN x layer, the SiAlZrN x The layer is arranged in affixed relation to the second dielectric layer; Wherein, the SiAlZrN x The element mass percentage composition of the layer is: Al: 0wt%~10wt%; Zr: 10wt%~50wt%; Si: 50wt%~90wt%; and / or, the element mass percentage composition of the SiAlNx layer is: Al: 10wt%~50wt%; Si: 50wt%~90wt%.

4. The single silver LOW-E glass according to claim 1, characterized in that: The fourth dielectric layer includes SiAlN x layer and SiAlZrN x layer, the SiAlZrNx layer is adhered to the third dielectric layer; Wherein, the SiAlZrN x The element mass percentage composition of the layer is: Al: 0wt%~10wt%; Zr: 10wt%~50wt%; Si: 50wt%~90wt%; and / or, the element mass percentage composition of the SiAlNx layer is: Al: 10wt%~50wt%; Si: 50wt%~90wt%.

5. The single silver LOW-E glass according to claim 1, characterized in that: The coating layer further includes a bottom dielectric layer, which is arranged between the glass substrate and the first dielectric layer.

6. The single silver LOW-E glass according to claim 5, characterized in that: The bottom dielectric layer includes SiO x .

7. The single silver Low-E glass according to claim 5, characterized in that: The thickness of the glass substrate is 2 mm to 19 mm; and / or, the thickness of the bottom dielectric layer is 5 nm to 30 nm; and / or, the thickness of the second dielectric layer is 5 nm to 15 nm; And / or, the thickness of the functional layer is 8 nm to 15 nm; And / or, the thickness of the barrier protective layer is 0.5 nm to 3 nm; And / or, the thickness of the third dielectric layer is 5 nm to 15 nm; And / or, the thickness of the top dielectric layer is 2 nm to 6 nm.

8. The single silver Low-E glass according to claim 1, characterized in that: The first dielectric layer includes SiAlN x layer and SiAlZrN x layer, wherein the thickness of the SiAlNx layer is 10nm to 50nm, and the SiAlZrN x The thickness of the layer is 3nm to 15nm; And / or, the fourth dielectric layer includes a SiAlNx layer and a SiAlZrNx layer stacked in sequence; wherein the thickness of the SiAlNx layer is 10 nm to 50 nm, and the thickness of the SiAlZrNx layer is 3 nm to 15 nm.

9. A method for preparing single silver Low-E glass according to any one of claims 1 to 8, characterized in that: The preparation method of the single silver Low-E glass comprises the following steps: S1, clean the glass substrate, dry it and place it in the magnetron sputtering area; S2. Sputtering and depositing a bottom dielectric layer, a first dielectric layer, a second dielectric layer, a functional layer, a barrier protective layer, a third dielectric layer, a fourth dielectric layer and a top dielectric layer on the surface of the glass substrate treated in step S1 in sequence to obtain the single silver Low-E glass.

10. The method for preparing single silver LOW-E glass according to claim 9, wherein: In step S2, when magnetron sputtering is performed on the bottom dielectric layer, the first dielectric layer, the second dielectric layer, the third dielectric layer, the fourth dielectric layer, and the top dielectric layer, a combination of a pulsed DC power supply and a planar cathode target is used, and the power of the pulsed DC power supply is 0.5 kW to 30 kW; And / or, in the step S2, when magnetron sputtering is performed on the functional layer and the barrier protective layer, a combination of a medium frequency power supply and a rotating cathode target is used, and the power of the medium frequency power supply is 10KW to 80KW.

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