Modeling method and device of esd device and electronic equipment

Abstract

The application discloses a modeling method and device of an ESD device and electronic equipment, and relates to the technical field of electronic circuits. The method comprises the following steps: acquiring a first change relationship between voltage and current of the ESD device in each state, and a key parameter used for judging the state of the ESD device, wherein the first change relationship is obtained based on I-V characteristic data capable of reflecting the electrical characteristics of the ESD device; and establishing a behavior model capable of simulating the electrical behavior of the ESD device. The behavior model is established based on the first change relationship and the key parameter of the ESD device. Compared with the establishment of a physical level model, the method does not need to perform block modeling on the physical structure of the ESD device, so that the modeling complexity of the ESD device is effectively reduced, and the modeling efficiency of the ESD device is improved.

Description

Technical Field

[0001] The present application relates to the field of electronic circuit technology, and in particular to a modeling method, device and electronic device for an ESD device. Background Art

[0002] With advances in integrated circuit technology, a chip's electrostatic discharge (ESD) resistance has become an increasingly important indicator of chip quality. Computer simulation techniques are often used during the circuit design phase to simulate the impact of ESD events on the chip, thereby determining and optimizing the chip's ESD resistance. Establishing an accurate ESD device model is crucial for effective simulation.

[0003] In related technologies, a physical-level model of an ESD device can be established based on the device's internal physical structure and physical parameters. Taking an N-type metal-oxide-semiconductor (NMOS) transistor as an example, when building the physical model, the NMOS transistor is typically divided into four components: an ideal MOSFET, an impact ionization current source, a parasitic transistor, and a substrate resistor. Physical-level modeling is then performed based on the physical parameters of each component. The physical-level models of these components are then combined to form the physical-level model of the NMOS transistor.

[0004] It can be seen from this that the physical-level model requires understanding the internal structure of the ESD device and performing block modeling, and the modeling process is relatively complicated. Summary of the Invention

[0005] This application provides a modeling method, apparatus, and electronic device for an ESD device, which can solve the problem of the relatively complex modeling process of ESD devices in related technologies. The technical solution is as follows:

[0006] In one aspect, a modeling method for an ESD device is provided, the method comprising:

[0007] Obtaining a first variation relationship between voltage and current of the ESD device in various states, and a key parameter for determining the state of the ESD device, wherein the first variation relationship is obtained based on IV characteristic data obtained by testing the ESD device;

[0008] Establishing a behavior model of the ESD device, wherein the behavior model is established based on the first change relationship and the key parameters;

[0009] Among them, the key parameters include: target current, trigger voltage, trigger current, holding voltage, and holding current. The target current is determined based on the trigger current, and the multiple states include: off state, trigger start state, hysteresis state and on state.

[0010] Optionally, before establishing the behavioral model of the ESD device, the method further includes:

[0011] Obtaining a second variation relationship between a trigger voltage of the ESD device and an influencing parameter affecting the electrical behavior of the ESD device, a third variation relationship between a sustain voltage of the ESD device and the influencing parameter, and a fourth variation relationship between the voltage of the ESD device in each state and the current and the influencing parameter;

[0012] The behavior model is established based on the first change relationship, the key parameter, the second change relationship, the third change relationship, and the fourth change relationship.

[0013] Optionally, the influencing parameter includes: at least one of a gate voltage and a size of the ESD device.

[0014] Optionally, obtaining a second variation relationship between the trigger voltage of the ESD device and an influencing parameter affecting the electrical behavior of the ESD device, a third variation relationship between the sustaining voltage of the ESD device and the influencing parameter, and a fourth variation relationship between the voltage of the ESD device in each state and the current and the influencing parameter includes:

[0015] Acquire multiple sets of IV characteristic data, each set of IV characteristic data corresponds to an influencing parameter of the ESD device;

[0016] Based on multiple sets of IV characteristic data, the second change relationship between the trigger voltage of the ESD device and the influencing parameters, the third change relationship between the maintenance voltage of the ESD device and the influencing parameters, and the fourth change relationship between the voltage of the ESD device in each state and the current and the influencing parameters are obtained.

[0017] Optionally, before establishing the behavioral model of the ESD device, the method further includes:

[0018] Acquire a first conversion relationship between the first change relationship of the ESD device of the first type and the first change relationship of the ESD device of the second type;

[0019] Acquire a second conversion relationship between the key parameter of the ESD device of the first type and the key parameter of the ESD device of the second type;

[0020] The behavioral model is established based on the first change relationship and the key parameter of the ESD device of a target type, the first conversion relationship, and the second conversion relationship, and the target type is the first type or the second type.

[0021] Optionally, before obtaining the first variation relationship between the voltage and the current of the ESD device in each state, the method further includes:

[0022] Acquiring IV characteristic data obtained by testing the ESD device;

[0023] Obtaining a first variation relationship between voltage and current of the ESD device in various states includes:

[0024] Based on the IV characteristic data, obtaining IV characteristic data of the ESD device in various states;

[0025] Based on the IV characteristic data in each of the states, a first variation relationship between voltage and current in the state is obtained.

[0026] Optionally, obtaining IV characteristic data obtained by testing the ESD device includes:

[0027] Obtain IV characteristic data from a TLP test of an ESD device.

[0028] Optionally, establishing a behavioral model of the ESD device includes:

[0029] The behavioral model of the ESD device is established using Verilog-A language.

[0030] In another aspect, a modeling apparatus for an ESD device is provided, the apparatus comprising:

[0031] an acquisition module, configured to acquire a first variation relationship between voltage and current of the ESD device in various states, and a key parameter for determining the state of the ESD device, wherein the first variation relationship is obtained based on IV characteristic data obtained by testing the ESD device;

[0032] An establishing module, configured to establish a behavioral model of the ESD device, wherein the behavioral model is established based on the first change relationship and the key parameters;

[0033] Among them, the key parameters include: target current, trigger voltage, trigger current, holding voltage, and holding current. The target current is determined based on the trigger current, and the multiple states include: off state, trigger start state, hysteresis state and on state.

[0034] On the other hand, an electronic device is provided, comprising: a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein when the processor executes the computer program, the ESD device modeling method as described in the above aspects is implemented.

[0035] On the other hand, a computer-readable storage medium is provided, on which a computer program is stored. When the computer program is executed by a processor, the ESD device modeling method as described in the above aspects is implemented.

[0036] On the other hand, a computer program product is provided, which includes a computer program or computer instructions. When the computer program or the computer instructions are executed by a processor, the method for modeling an ESD device as described in the above aspects is implemented.

[0037] The beneficial effects of the technical solution provided by this application include at least:

[0038] The present application provides a modeling method, device and electronic device for an ESD device, which can obtain a first variation relationship between the voltage and current of the ESD device in various states, as well as key parameters for determining the state of the ESD device. The first variation relationship is obtained based on IV characteristic data that can reflect the electrical characteristics of the ESD device. Subsequently, the method can establish a behavioral model that can simulate the electrical behavior of the ESD device. The behavioral model is established based on the first variation relationship and the key parameters of the ESD device. Compared to establishing a physical-level model, the method provided by the present application does not require block modeling of the physical structure of the ESD device, thereby effectively reducing the modeling complexity of the ESD device and improving the modeling efficiency of the ESD device.

[0039] Additional aspects and advantages of the present application will be given in part in the description below, and in part will become apparent from the description below, or will be learned through practice of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] Figure 1 This is a flow chart of a modeling method for an ESD device provided in an embodiment of the present application;

[0041] Figure 2 This is a flow chart of another ESD device modeling method provided in an embodiment of the present application;

[0042] Figure 3 is a schematic diagram of an IV characteristic curve provided in an embodiment of the present application;

[0043] Figure 4 This is a flow chart of establishing a behavioral model of an ESD device provided in an embodiment of the present application;

[0044] Figure 5 This is a schematic diagram of test results obtained by performing a TLP test on an NMOS transistor according to an embodiment of the present application;

[0045] Figure 6 is a schematic diagram of a test circuit for verifying a behavioral model provided in an embodiment of the present application;

[0046] Figure 7 1 is a schematic diagram comparing a simulation result obtained by verifying a behavioral model and a TLP test result provided by an embodiment of the present application;

[0047] Figure 8 This is a schematic diagram of a behavioral model provided in an embodiment of the present application applied to a circuit;

[0048] Figure 9 Yes Figure 8 A schematic diagram of a global simulation result obtained by simulating the circuit shown;

[0049] Figure 10 yes Figure 9 A partial enlarged schematic diagram;

[0050] Figure 11 1 is a schematic structural diagram of a modeling device for an ESD device provided in an embodiment of the present application;

[0051] Figure 12 This is a structural diagram of an electronic device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0052] The following describes in detail embodiments of the present application, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are intended to be used to explain the present application, and should not be construed as limiting the present application.

[0053] The present invention provides a method for modeling an ESD device. Figure 1 , the method comprising:

[0054] Step 101: Obtain a first variation relationship between voltage and current of an ESD device in various states, and key parameters for determining the state of the ESD device.

[0055] The multiple states may include an off state (also referred to as a cutoff state), a trigger start state, a hysteresis state, and an on state. The first change relationship among these multiple states may reflect the complete electrical behavior of the ESD device without thermal damage. The key parameters may include a target current, a trigger voltage, a trigger current, a holding voltage, and a holding current. The target current is determined based on the trigger current.

[0056] It is understandable that the first variation relationship and key parameters can be obtained based on IV (ie, current-voltage) characteristic data obtained by testing the ESD device.

[0057] Optionally, the first variation relationship and the key parameters may be obtained in advance. Alternatively, for the first variation relationship, IV characteristic data obtained by testing the ESD device may be obtained first, and then the first variation relationship may be obtained based on the IV characteristic data.

[0058] Step 102 : Establishing a behavior model of the ESD device. The behavior model is established based on a first variation relationship between voltage and current of the ESD device in various states, and key parameters of the ESD device.

[0059] In one optional implementation, the electronic device can automatically establish a behavioral model for the ESD device based on a first variation relationship between voltage and current in various states of the ESD device and key parameters. For example, the electronic device may pre-store a common behavioral model template (e.g., a Verilog-A code template). The electronic device can adjust the behavioral model template based on the first variation relationship and the key parameters to obtain the behavioral model of the ESD device.

[0060] In another optional implementation, a designer can write code (e.g., using Verilog-A) based on the first voltage-current variation relationship under various states and key parameters of the ESD device. In response to the designer's code, the electronic device can retrieve and store the code, thereby obtaining a behavioral model of the ESD device.

[0061] In summary, the present application provides a modeling method for an ESD device, which can obtain a first variation relationship between the voltage and current of the ESD device in various states, as well as key parameters for determining the state of the ESD device. The first variation relationship is obtained based on IV characteristic data that can reflect the electrical characteristics of the ESD device. Subsequently, the method can establish a behavioral model that can simulate the electrical behavior of the ESD device. The behavioral model is established based on the first variation relationship and the key parameters of the ESD device. Compared to establishing a physical-level model, the method provided in the embodiment of the present application does not require block modeling of the physical structure of the ESD device, thereby effectively reducing the modeling complexity of the ESD device and improving the modeling efficiency of the ESD device.

[0062] Figure 2 This is a flow chart of another ESD device modeling method provided by an embodiment of the present application, which can be applied to electronic devices. Figure 2 , the method may include:

[0063] Step 201: Acquire IV characteristic data obtained by testing an ESD device.

[0064] TLP testing equipment can perform TLP testing on ESD devices to obtain true IV characteristic data of the ESD device. This IV characteristic data is used to reflect the transient IV characteristics in high voltage (i.e., ESD voltage) or high current (i.e., ESD current) regions without causing thermal damage to the ESD device.

[0065] It is understood that step 201 can be performed by an electronic device. In this case, the tester can export the test data (i.e., the IV characteristic data) from the TLP test device and deliver it to the designer. The designer can then import the IV characteristic data into the electronic device, which then obtains the IV characteristic data. Alternatively, the electronic device can connect to the TLP test device via an interface (e.g., a USB interface) of the TLP test device. After the TLP test obtains the test data, the test data can be directly sent to the electronic device, which then obtains the IV characteristic data.

[0066] Step 202: Obtain key parameters of the ESD device.

[0067] When building a behavioral model for an ESD device, not only is the relationship between voltage and current in each state required to accurately simulate the device's electrical behavior, but the conditions determining when the device is in each state are also required to determine the device's current state. This ensures that the behavioral model accurately simulates the device's electrical behavior.

[0068] Key parameters of an ESD device can be used to determine the conditions for each state of the ESD device, thereby determining the device's current state. These key parameters may include: target current, trigger voltage, trigger current, holding voltage, and holding current. The trigger voltage is the minimum voltage required to cause the ESD device to begin conducting. The trigger current is the minimum current required to cause the ESD device to begin conducting. The holding voltage is the minimum voltage required to maintain a low-resistance state (i.e., on-state) after the ESD device is turned on. This holding voltage is lower than the trigger voltage. The holding current is the minimum current required to maintain a low-resistance state after the ESD device is turned on. The target current is determined based on the trigger current. This target current is greater than 0 and one order of magnitude smaller than the trigger current. For example, if the trigger current is 100 microamperes (μA), the target current can be 10 μA.

[0069] Specifically, the conditions for determining whether the ESD device is in the off state may include: the current is less than or equal to the target current. The conditions for determining whether the ESD device is in the trigger start state may include: the current is greater than the target current. The conditions for determining whether the ESD device is in the hysteresis state may include: the current is greater than the trigger current, and the voltage is greater than the trigger voltage. The conditions for determining whether the ESD device is in the on state may include: the voltage is greater than or equal to the holding voltage, and the current is greater than or equal to the holding current.

[0070] It is understandable that the key parameters of an ESD device can be used to determine the judgment conditions for each state for the following reason: When the current of the ESD device exceeds the target current, it can enter the trigger start state from the off state. When the voltage of the ESD device reaches the trigger voltage and the current of the ESD device reaches the trigger current, the ESD device enters the hysteresis state from the trigger start state. Thereafter, when the voltage of the ESD device decreases to the holding voltage and the current increases to the holding current, the ESD device can be considered to enter the on state from the hysteresis state.

[0071] Optionally, the key parameter may also include: on-resistance of the ESD device. The on-resistance refers to the equivalent resistance of the ESD device after entering the on state.

[0072] In the embodiment of the present application, step 202 may be performed by an electronic device, and there may be multiple implementation processes for step 202. The following exemplary implementation processes of step 202 are described using the following optional implementation methods as examples:

[0073] When the ESD device is discharging current, its IV characteristic curve is as follows: Figure 3 As shown, the IV characteristic curve usually shows a hysteresis characteristic. The IV characteristic curve is drawn based on the IV characteristic data. Figure 3It can be seen that the IV characteristic curve has multiple turning points. The multiple turning points include: point (V t1 , I t1 ), point (V h , I h ) and point (V t2 , I t2 ). Among them, V t1 Indicates the trigger voltage of the ESD device, I t1 Is the trigger current of the ESD device. V h is the holding voltage of the ESD device, I h is the holding current of the ESD device, R on is the on-resistance. V t2 It is the voltage when the ESD device is thermally damaged (ie, thermal breakdown), I t2 It is the current when the ESD device is thermally damaged.

[0074] Based on this, in a first optional implementation, the electronic device can determine the key parameters based on the turning points in the IV characteristic curve. Specifically, the electronic device can determine the voltage at the first turning point in the IV characteristic curve, along the direction of increasing current, as the trigger voltage of the ESD device, and the current at the first turning point as the trigger current of the ESD device, and then determine the target current based on the trigger current; and determine the voltage at the second turning point as the sustaining voltage of the ESD device, and the current at the second turning point as the sustaining current of the ESD device.

[0075] In the case where the key parameter also includes on-resistance, the electronic device may determine the slope of the curve segment after the second turning point in the IV characteristic curve as the on-resistance of the ESD device.

[0076] This shows that electronic equipment can automatically obtain key parameters of ESD devices based on IV characteristic data.

[0077] In a second optional implementation, the electronic device can display the IV characteristic curve for the designer to review. Based on the IV characteristic curve, the designer can determine the ESD device's trigger voltage, trigger current, holding voltage, and holding current, and determine the target current based on the trigger current, thereby obtaining key parameters. The designer can then input these key parameters into the electronic device. Accordingly, the electronic device can obtain these key parameters in response to the input operation.

[0078] Step 203: Based on the IV characteristic data, obtain a first variation relationship between the voltage and the current of the ESD device in each state.

[0079] It can be understood that the states of the ESD device generally include: an off state, a trigger start state, a hysteresis state, a conduction state and a thermal damage state. The behaviors of the ESD device in these states constitute the complete behavior of the ESD device. Since it is necessary to avoid the ESD device in the thermal damage state in the process of circuit design, the I-V characteristic data in the off state, the trigger start state, the hysteresis state and the conduction state of the ESD device can generally be modeled. Therefore, the first change relationship of the voltage with the current in each of the off state, the trigger start state, the hysteresis state and the conduction state needs to be obtained.

[0080] In the embodiment of the application, the implementation process of step 203 can include:

[0081] Step S1, based on the I-V characteristic data, obtaining the I-V characteristic data of the ESD device in each state.

[0082] In an optional example, according to the states of the ESD device, Figure 3 The I-V characteristic curve shown can be divided into a plurality of curve segments. Each curve segment corresponds to a state of the ESD device. Based on this, the electronic device can directly obtain the I-V characteristic data of the ESD device in each state based on the I-V characteristic data.

[0083] Specifically, the electronic device can directly divide the I-V characteristic curve into a plurality of curve segments, and determine the data represented by the curve segment corresponding to any state as the I-V characteristic data of the ESD device in the any state.

[0084] In another optional example, the electronic device can automatically determine the I-V characteristic data in each state based on the determination conditions of each state. Specifically, the electronic device can determine the data of the current less than or equal to the target current as the I-V characteristic data of the ESD device in the off state; determine the data of the current greater than the target current and less than or equal to the trigger current, and the voltage less than or equal to the trigger voltage, as the I-V characteristic data of the ESD device in the trigger start state; determine the data of the voltage less than the trigger voltage and greater than the maintenance voltage, and the current greater than the trigger current and less than the maintenance current, as the I-V characteristic data of the ESD device in the hysteresis state; and determine the data of the voltage greater than or equal to the maintenance voltage, and the current greater than or equal to the maintenance current, as the I-V characteristic data of the ESD device in the conduction state.

[0085] In yet another optional example, the designer can divide the I-V characteristic data based on a plurality of states of the ESD device. The electronic device can obtain the I-V characteristic data of the ESD device in each state in response to the division operation on the I-V characteristic data.

[0086] Step S2: Based on the IV characteristic data in each state, a first variation relationship between voltage and current in the state is obtained.

[0087] It's understandable that in the IV characteristic curve of an ESD device, the current increases monotonically. However, due to the hysteresis characteristics of the ESD device, one voltage corresponds to two current values ​​in the IV characteristic curve. Therefore, for each state, the electronic device can use current as the independent variable and voltage as the dependent variable to fit the IV characteristic data for that state, thereby obtaining a first relationship between the voltage and current of the ESD device in that state.

[0088] The first variation relationship between voltage and current in each state can reflect the IV characteristic of the ESD device in the state, and the variation relationship can be represented by an IV function.

[0089] Step 204 : Establishing a behavior model of the ESD device. The behavior model is established based on a first variation relationship between voltage and current of the ESD device in various states, and key parameters of the ESD device.

[0090] The core idea behind building a behavioral model is to use a piecewise function to fit the complete IV characteristic curve of the ESD device. This piecewise function consists of multiple analytical expressions. Each expression describes the first-order relationship between the voltage and current of the ESD device in a specific state. The conditions of the analytical expression corresponding to each state—off, trigger start, hysteresis, and on—determine the state. These conditions are determined based on key parameters.

[0091] Figure 4 A flow chart for establishing a behavioral model of an ESD device is shown. Figure 4 In, V ESD Indicates the voltage of the ESD device, I ESD Indicates the current of the ESD device. off 、F trigger 、F snapback and F Ron They represent the functional relationship between the voltage and current of the ESD device in the off state, trigger start state, hysteresis state and on state, that is, the relationship between the voltage and current.

[0092] ESD devices have leakage current before they are triggered, so if Figure 4 As shown, in the closed state, the function F off Indicates the voltage V in the off state ESD With current I ESD When the current I ESD Reach the target current I t0 , the ESD device enters the trigger start state, at this time the function Ftrigger Indicates the voltage V at the start of the trigger ESD With current I ESD When the current I ESD Greater than the trigger current I t1 , and the voltage V ESD Greater than the trigger voltage V t1 When the ESD device enters the hysteresis state, the function F snapback Indicates the voltage V in this hysteresis state ESD With current I ESD When the voltage V ESD Reduce to the maintenance voltage V h , and the current I ESD Increase to the maintenance current I h When the ESD device enters the conduction state, F Ron Function to represent the voltage V in the on state ESD With current I ESD The changing relationship.

[0093] Optionally, the method provided in the embodiment of the present application can be based on Figure 4 The modeling process shown uses Verilog-A language to write the piecewise function mentioned above to establish the behavioral model of the ESD device.

[0094] In one optional implementation, the electronic device can automatically establish a behavioral model for the ESD device based on a first variation relationship between voltage and current in various states of the ESD device and key parameters. For example, the electronic device may pre-store a common behavioral model template (e.g., a Verilog-A code template). The electronic device can adjust the behavioral model template based on the first variation relationship and the key parameters to obtain the behavioral model of the ESD device.

[0095] In another optional implementation, a designer can write code (e.g., using Verilog-A) based on the first voltage-current variation relationship under various states and key parameters of the ESD device. In response to the designer's code, the electronic device can retrieve and store the code, thereby obtaining a behavioral model of the ESD device.

[0096] Optionally, the method provided by the embodiment of the present application can further acquire a second variation relationship of the trigger voltage of the ESD device with respect to an influence parameter that influences the electrical behavior of the ESD device, a third variation relationship of the sustain voltage of the ESD device with respect to the influence parameter, and a fourth variation relationship of the voltage of the ESD device in each state with respect to the current and the influence parameter. At this time, the behavior model of the ESD device is established based on the first variation relationship, the key parameter, the second variation relationship, the third variation relationship, and the fourth variation relationship. The influence parameter can include at least one of the gate voltage of the ESD device and the size of the ESD device. The size can include the length and the width of the ESD device.

[0097] The trigger voltage under each of the other influence parameters can be predicted through the second variation relationship. The sustain voltage under each of the other influence parameters can be predicted through the third variation relationship. The first variation relationship under each of the other influence parameters can be predicted through the fourth variation relationship. In this way, the behavior model established can simulate the electrical behavior of the ESD device under various influence parameters, that is, the behavior model obtained can be adapted to different ESD devices (such as ESD devices of different sizes), thereby improving the universality and expansibility of the behavior model.

[0098] Optionally, the influence parameter can further include at least one of the voltage difference between the substrate and the source, and the channel length and other parameters that influence the electrical behavior of the ESD device.

[0099] It can be understood that, in the case that the establishment of the behavior model is further based on the second variation relationship, the third variation relationship, and the fourth variation relationship, the second variation relationship, the third variation relationship, and the fourth variation relationship can also be written in the Verilog-A language to obtain the behavior model of the ESD device.

[0100] Optionally, for the trigger current and the sustain current under various influence parameters, the method provided by the embodiment of the present application can determine the trigger current based on the trigger voltage and the first variation relationship, and determine the sustain current based on the sustain voltage and the first variation relationship. Alternatively, the method can further acquire a fifth variation relationship of the trigger current with respect to the influence parameter, and a sixth variation relationship of the sustain current with respect to the influence parameter. Correspondingly, the establishment of the behavior model also needs to be based on the fifth variation relationship and the sixth variation relationship.

[0101] In the embodiment of the present application, the electronic device can acquire a plurality of groups of I-V characteristic data obtained by testing the ESD device. Each group of I-V characteristic data corresponds to one influence parameter of the MOS tube. Then, the electronic device can fit the second correspondence relationship, the third correspondence relationship, and the fourth correspondence relationship described above based on the plurality of groups of I-V characteristic data.

[0102] It can be understood that during the TLP test of the ESD device by the TLP test equipment, the gate voltage, and / or size, and / or channel length, and / or voltage difference between the substrate and the source of the ESD device can be changed, while keeping other parameters of the ESD device unchanged, thereby obtaining multiple sets of IV characteristic data of the ESD device corresponding one-to-one to multiple influencing parameters.

[0103] It is also understandable that the method provided in the embodiment of the present application can also establish a behavioral model of the ESD device by programming piecewise functions under various influencing parameters, thereby improving the applicability of the behavioral model to a certain extent.

[0104] In an embodiment of the present application, after the type of the ESD device changes, its IV characteristics will also change. Optionally, the method provided in the embodiment of the present application can also obtain a first change relationship of the first type of ESD device and a first conversion relationship between the first change relationship of the second type of ESD device; and obtain a second conversion relationship between the key parameters of the first type of ESD device and the key parameters of the second type of ESD device. At this time, the behavioral model of the ESD device can be established based on the first change relationship and key parameters of the target type of ESD device, the first conversion relationship, and the second conversion relationship. The target type is the first type or the second type.

[0105] The first conversion relationship and the second conversion relationship, as well as the first conversion relationship between the key parameters and various states of one type of ESD device, can be used to determine the key parameters and various states of the other type of ESD device. This allows the established behavioral model to simulate the electrical behavior of different types of ESD devices, further improving the versatility and scalability of the behavioral model.

[0106] It is understood that the ESD device may be a MOS transistor. This type may be a channel type of the ESD device. For example, the first type of ESD device may be an NMOS transistor, and the second type of ESD device may be a PMOS transistor.

[0107] It is understandable that key parameters are the main factors that determine the behavioral characteristics of the behavioral model (such as triggering, hysteresis, and conduction). Therefore, it is necessary to focus on key parameters when establishing a behavioral model. For the hysteresis state, since the hysteresis state process is very short, the relationship between the change of voltage and current in the hysteresis state is not the design focus of the behavioral model. It is sufficient to ensure that the behavioral model exhibits this hysteresis state. In addition, in actual applications, for the function F in the off state, off Designers can also make simple adjustments to the function based on the electrical characteristics of the ESD device. The electronic device can adjust the function in response to the adjustment operation.

[0108] It can also be understood that the above steps can be implemented by electronic equipment or by manual operation.

[0109] After the behavioral model is established, it can be used to perform mixed simulation with the actual protected circuit to discover the weak paths of ESD protection in the internal circuit, thereby optimizing the ESD protection performance of the circuit during circuit design, greatly saving costs.

[0110] This embodiment of the present application performs TLP testing on an ESD device in a chip based on a 180nm process and develops a model based on the IV characteristic curves obtained from the test. The influencing parameters of the ESD device include gate voltage. The ESD device is a 5V NMOS device with a width of 500 microns (μm) and a length of 0.5 μm. Figure 5 The figure shows the test results, namely, the IV characteristic curves, obtained by performing TLP tests on the NMOS transistor at different gate voltages.

[0111] from Figure 5 It can be seen that the gate voltage V G When it is 0, the trigger voltage V t1 About 10.5V. Gate voltage V G When the trigger voltage V of the NMOS device is 2V, t1 The gate voltage V G When the trigger voltage V of the NMOS device is 5V, t1 It increases to 6V. It can be seen that the trigger voltage of the NMOS device shows a characteristic of first decreasing and then increasing as its gate voltage increases. Therefore, a second-order function can be used to calculate V t1 With V G , thereby obtaining a second variation relationship between the trigger voltage and the gate voltage.

[0112] Please continue to see Figure 5 , the maintenance voltage of the NMOS device V h With the gate voltage V G The increase of V is approximately linear. Therefore, a first-order function can be used to calculate V h With V G , thereby obtaining a third variation relationship between the holding voltage and the gate voltage.

[0113] By using the method provided in the embodiment of the present application, after establishing a behavioral model of the NMOS device based on the test results obtained, the established behavioral model can be simulated and verified. Figure 6 A test circuit for verifying the behavioral model is shown. Figure 6 M inclamp For clamping devices. Figure 6 As shown, the behavioral model established in Verilog-A language is connected in parallel with the spectre model of the ESD device. The spectre model is only used for normal simulation under the specified safe operating voltage, which is lower than the trigger voltage of the ESD device. That is, the spectre model can only be used to simulate the behavior of the ESD device before it is triggered. The spectre model includes part of the current discharged by the NMOS device due to channel conduction, and the behavioral model includes the current discharged through other channels (such as parasitic transistors). The two are combined for hybrid simulation, and the simulation results are compared with the TLP test results of the 5VNMOS device. Figure 7 shown.

[0114] from Figure 7 It can be seen that before the NMOS device is triggered, the IV characteristic curve shows the output characteristics of the NMOS tube. The IV curve segment in the off state can be the simulation result of the spectre model, and it basically coincides with the test results. This shows that the accuracy of the existing spectre model is relatively high. When the voltage of the NMOS device rises to the trigger voltage preset in the behavioral model, the NMOS device undergoes hysteresis, the current increases but the voltage decreases. At this point, there are some differences between the current and voltage relationship in the simulation results and the test results. However, as mentioned earlier, there is no need to focus on the IV characteristics of the hysteresis state, so this part of the difference can be tolerated. After hysteresis, the voltage of the NMOS device reaches the maintenance voltage V h , and enters the conduction state. Figure 7 It can be seen intuitively that the simulation results in the on-state have a high degree of fit with the test results. This shows that the behavioral model of the ESD device established by the method provided in the embodiment of the application is highly reliable.

[0115] In addition, you can also Figure 8 In the actual circuit shown, the clamping device M between the power supply and the ground is clamp Add a behavioral model to verify the practicality of the behavioral model. This circuit is a traditional IO circuit structure, including M n and M p The driving circuit, IO pad (PAD), p-type diode A1, n-type diode B1, resistor R1, capacitor C1 and clamping device M clamp The RC trigger clamp circuit is formed.

[0116] The circuit is tested for forward ESD from the PAD to ground using a 2kV human body model (HBM) equivalent model. The ESD current flows through the A1 diode to the power bus, and then the RC trigger clamp circuit discharges the ESD current to the ground. The simulation results are shown in Figure 2. Figure 9 and Figure 10 shown. Figure 9 is a schematic diagram of the global simulation results. Figure 10 for Figure 9 An enlarged schematic diagram of the curve within the dashed box W in the simulation results shown.

[0117] from Figure 9 and Figure 10 It can be seen that when an ESD event occurs, the voltage on the VDD bus is raised. Due to the coupling effect of R1 and C1, the clamping device M clamp The gate voltage V G As the voltage on the VDD bus increases, the clamping device M clamp The total ESD current gradually increases. G When the voltage on the VDD bus rises to 1.97V and 5.825V, the voltage on the behavioral model reaches the trigger voltage, triggering the behavioral model. The ESD current can then be discharged to ground through the behavioral model.

[0118] The voltage on the VDD bus drops by about 5V, the behavioral model is in the on state, the voltage is clamped at about 5V, and the ESD current continues to increase. However, due to the gate voltage V G As the voltage drop on the VDD bus gradually decreases, the voltage drop on the VDD bus also gradually decreases. Therefore, after the ESD event ends, the behavioral model returns to its initial state without affecting the operation of the circuit. This shows that the behavioral model established using the method provided in the embodiments of the present application is highly practical.

[0119] It is understood that the order of the steps in the ESD device modeling method provided in the embodiments of the present application can be adjusted appropriately, and the number of steps can be increased or decreased depending on the circumstances. For example, step 201 can be deleted as appropriate. Any variation that can be easily conceived by a person skilled in the art within the scope of the technology disclosed in this application should be included in the scope of protection of this application, and therefore will not be described in detail.

[0120] In summary, the embodiment of the present application provides a modeling method for an ESD device, which can obtain a first variation relationship between the voltage and current of the ESD device in various states, as well as key parameters for determining the state of the ESD device. The first variation relationship is obtained based on IV characteristic data that can reflect the electrical characteristics of the ESD device. Subsequently, the method can establish a behavioral model that can simulate the electrical behavior of the ESD device. The behavioral model is established based on the first variation relationship and the key parameters of the ESD device. Compared to establishing a physical-level model, the method provided by the embodiment of the present application does not require block modeling of the physical structure of the ESD device, thereby effectively reducing the modeling complexity of the ESD device and improving the modeling efficiency of the ESD device.

[0121] The embodiment of the present application provides a modeling device for an ESD device, which can execute the modeling method for an ESD device provided in the above method embodiment. Figure 11 , the modeling device 300 includes:

[0122] The acquisition module 301 is used to obtain a first variation relationship between voltage and current of the ESD device in various states, and key parameters for determining the state of the ESD device. The first variation relationship is obtained based on IV characteristic data obtained by testing the ESD device.

[0123] The establishing module 302 is used to establish a behavior model of the ESD device, where the behavior model is established based on the first variation relationship and key parameters.

[0124] Among them, the key parameters include: target current, trigger voltage, trigger current, holding voltage, and holding current. The target current is determined based on the trigger current, and the multiple states include: off state, trigger start state, hysteresis state and on state.

[0125] In summary, an embodiment of the present application provides a modeling device for an ESD device, which can obtain a first variation relationship between the voltage and current of the ESD device in various states, as well as key parameters for determining the state of the ESD device. The first variation relationship is obtained based on IV characteristic data that can reflect the electrical characteristics of the ESD device. Subsequently, the device can establish a behavioral model that can simulate the electrical behavior of the ESD device. The behavioral model is established based on the first variation relationship and the key parameters of the ESD device. Compared to establishing a physical-level model, the device provided by the embodiment of the present application does not need to perform block modeling on the physical structure of the ESD device, thereby effectively reducing the modeling complexity of the ESD device and improving the modeling efficiency of the ESD device.

[0126] The present application embodiment provides an electronic device, see Figure 12The electronic device 400 includes a processor 401. The processor 401 is configured to:

[0127] Obtaining a first variation relationship between voltage and current of the ESD device in various states, and a key parameter for determining the state of the ESD device, wherein the first variation relationship is obtained based on IV characteristic data obtained by testing the ESD device;

[0128] Establishing a behavioral model of the ESD device, where the behavioral model is established based on the first change relationship and key parameters;

[0129] Among them, the key parameters include: target current, trigger voltage, trigger current, holding voltage, and holding current. The target current is determined based on the trigger current, and the multiple states include: off state, trigger start state, hysteresis state and on state.

[0130] Optionally, the processor 401 may also be configured to:

[0131] Obtaining a second variation relationship between a trigger voltage of the ESD device and an influencing parameter affecting the electrical behavior of the ESD device, a third variation relationship between a sustain voltage of the ESD device and the influencing parameter, and a fourth variation relationship between a voltage of the ESD device in each state and the current and the influencing parameter;

[0132] The behavior model is established based on the first change relationship, the key parameter, the second change relationship, the third change relationship, and the fourth change relationship.

[0133] Optionally, the influencing parameter includes: at least one of a gate voltage and a size of the ESD device.

[0134] Optionally, the processor 401 may be configured to:

[0135] Acquire multiple sets of IV characteristic data, each set of IV characteristic data corresponding to an influencing parameter of the ESD device;

[0136] Based on multiple sets of IV characteristic data, the second change relationship between the trigger voltage of the ESD device and the influencing parameters, the third change relationship between the maintenance voltage of the ESD device and the influencing parameters, and the fourth change relationship between the voltage of the ESD device in each state and the current and influencing parameters are obtained.

[0137] Optionally, the processor 401 may also be configured to:

[0138] Obtaining a first conversion relationship between a first change relationship of a first type of ESD device and a first change relationship of a second type of ESD device;

[0139] Obtaining a second conversion relationship between a key parameter of a first type of ESD device and a key parameter of a second type of ESD device;

[0140] The behavior model is established based on a first change relationship and a key parameter of the ESD device of the target type, a first conversion relationship, and a second conversion relationship, the target type being the first type or the second type.

[0141] Optionally, the processor 401 can also be configured to:

[0142] acquire I-V characteristic data obtained by testing the ESD device;

[0143] The processor 401 can be configured to:

[0144] acquire I-V characteristic data of the ESD device in each state based on the I-V characteristic data;

[0145] acquire a first change relationship of voltage with respect to current in the state based on the I-V characteristic data in each state.

[0146] Optionally, the processor 401 can be configured to:

[0147] acquire I-V characteristic data obtained by TLP testing of the ESD device.

[0148] Optionally, the processor 401 can be configured to:

[0149] establish a behavior model of the ESD device by using a Verilog-A language.

[0150] As shown in Figure 12 the electronic device can further include a memory 403. The processor 401 and the memory 403 are connected, for example, through a bus 402. Optionally, the electronic device 400 can further include a transceiver 404. It should be noted that the transceiver 404 is not limited to one in actual application, and the structure of the electronic device 400 does not constitute a limitation on the embodiments of the present application.

[0151] Processor 401 may be a CPU (Central Processing Unit), a general-purpose processor, a DSP (Digital Signal Processor), an ASIC (Application Specific Integrated Circuit), an FPGA (Field Programmable Gate Array), or other programmable logic device, transistor logic device, hardware component, or any combination thereof. It may implement or execute the various exemplary logic blocks, modules, and circuits described in conjunction with the disclosure of this application. Processor 401 may also be a combination that implements computing functions, such as a combination of one or more microprocessors, or a combination of a DSP and a microprocessor.

[0152] Bus 402 may include a path for transmitting information between the above components. Bus 402 may be a PCI (Peripheral Component Interconnect) bus or an EISA (Extended Industry Standard Architecture) bus. Bus 402 may be divided into an address bus, a data bus, a control bus, etc. For ease of representation, Figure 12 Only one thick line is used in the diagram, but this does not mean that there is only one bus or one type of bus.

[0153] The memory 403 is used to store a computer program corresponding to the ESD device modeling method of the above embodiment of the present application, and the computer program is controlled and executed by the processor 401. The processor 401 is used to execute the computer program stored in the memory 403 to implement the content shown in the above method embodiment.

[0154] The electronic device 400 includes but is not limited to mobile terminals such as mobile phones, laptop computers, digital broadcast receivers, PDAs (personal digital assistants), PADs (tablet computers), PMPs (portable multimedia players), and fixed terminals such as digital TVs and desktop computers. Figure 12 The electronic device 400 shown is merely an example and should not limit the functions and scope of use of the embodiments of the present application.

[0155] The present application also provides a computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, implements the ESD device modeling method provided in the above method embodiment. For example, Figure 1 or Figure 2 The method shown.

[0156] The embodiment of the present application provides a computer program product, which includes a computer program or computer instructions. When the computer program or computer instructions are executed by a processor, the modeling method of the ESD device provided in the above method embodiment is implemented. For example, Figure 1 or Figure 2 The method shown.

[0157] It should be noted that the logic and / or steps represented in flowcharts or otherwise described herein, for example, can be considered as a sequenced list of executable instructions for implementing logical functions, and can be embodied in any computer-readable medium for use by, or in conjunction with, an instruction execution system, apparatus, or device (e.g., a computer-based system, a system including a processor, or other system that can fetch and execute instructions from an instruction execution system, apparatus, or device). For purposes of this specification, a "computer-readable medium" can be any device that can contain, store, communicate, propagate, or transport a program for use by, or in conjunction with, an instruction execution system, apparatus, or device. More specific examples (non-exhaustive list) of computer-readable media include the following: an electrical connection with one or more wires (electronic device), a portable computer disk cartridge (magnetic device), random access memory (RAM), read-only memory (ROM), erasable and programmable read-only memory (EPROM or flash memory), fiber optic devices, and a portable compact disc read-only memory (CDROM). Furthermore, the computer-readable medium may even be paper or other suitable medium on which the program is printed, since the program may be obtained electronically, for example, by optically scanning the paper or other medium and then editing, interpreting or processing it in another suitable manner if necessary, and then storing it in a computer memory.

[0158] It should be understood that various parts of this application can be implemented using hardware, software, firmware, or a combination thereof. In the above-described embodiments, multiple steps or methods can be implemented using software or firmware stored in a memory and executed by a suitable instruction execution system. For example, if implemented using hardware, as in another embodiment, any one of the following technologies known in the art or a combination thereof can be used: a discrete logic circuit having logic gate circuits for implementing logic functions on data signals, an application-specific integrated circuit having suitable combinational logic gate circuits, a programmable gate array (PGA), a field-programmable gate array (FPGA), etc.

[0159] Throughout this specification, reference to terms such as "one embodiment," "some embodiments," "examples," "specific examples," or "some examples" means that a specific feature, structure, material, or characteristic described in conjunction with that embodiment or example is included in at least one embodiment or example of the present application. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

[0160] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of the technical features being referred to. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of such features. Throughout the description of this application, "plurality" means at least two, for example, two, three, etc., unless otherwise specifically defined.

[0161] In this application, unless otherwise specified or limited, the terms "installed," "connected," "connect," "fixed," etc. should be understood in a broad sense. For example, they can refer to fixed connection, detachable connection, or integration; mechanical connection or electrical connection; direct connection or indirect connection through an intermediate medium; internal communication between two elements or interaction between two elements, unless otherwise specified. Those skilled in the art will understand the specific meanings of the above terms in this application based on specific circumstances.

[0162] Although the embodiments of the present application have been shown and described above, it can be understood that the above embodiments are exemplary and cannot be understood as limitations on the present application. Ordinary technicians in this field can change, modify, replace and modify the above embodiments within the scope of the present application.

Claims

1. A modeling method for an ESD device, characterized in that: The method comprises: Obtaining a first variation relationship between voltage and current of the ESD device in various states, and a key parameter for determining the state of the ESD device, wherein the first variation relationship is obtained based on IV characteristic data obtained by testing the ESD device; Acquire a first conversion relationship between the first change relationship of the ESD device of the first type and the first change relationship of the ESD device of the second type; Acquire a second conversion relationship between the key parameter of the ESD device of the first type and the key parameter of the ESD device of the second type; Establishing a behavioral model of the ESD device, wherein the behavioral model is established based on the first change relationship and the key parameter of the ESD device of a target type, the first conversion relationship, and the second conversion relationship, and the target type is the first type or the second type; Among them, the key parameters include: target current, trigger voltage, trigger current, holding voltage, and holding current. The target current is determined based on the trigger current, and the multiple states include: off state, trigger start state, hysteresis state and on state.

2. The method according to claim 1, characterized in that Before establishing the behavioral model of the ESD device, the method further includes: Obtaining a second variation relationship between a trigger voltage of the ESD device and an influencing parameter affecting the electrical behavior of the ESD device, a third variation relationship between a sustain voltage of the ESD device and the influencing parameter, and a fourth variation relationship between the voltage of the ESD device in each state and the current and the influencing parameter; The behavior model is established based on the first change relationship, the key parameter, the second change relationship, the third change relationship, and the fourth change relationship.

3. The method according to claim 2, characterized in that The influencing parameter includes at least one of a gate voltage and a size of the ESD device.

4. The method according to claim 2, characterized in that Obtaining a second variation relationship between a trigger voltage of the ESD device and an influencing parameter affecting the electrical behavior of the ESD device, a third variation relationship between a sustain voltage of the ESD device and the influencing parameter, and a fourth variation relationship between the voltage of the ESD device in each state and the current and the influencing parameter, including: Acquire multiple sets of IV characteristic data, each set of IV characteristic data corresponds to an influencing parameter of the ESD device; Based on multiple sets of IV characteristic data, the second change relationship between the trigger voltage of the ESD device and the influencing parameters, the third change relationship between the maintenance voltage of the ESD device and the influencing parameters, and the fourth change relationship between the voltage of the ESD device in each state and the current and the influencing parameters are obtained.

5. The method according to any one of claims 1 to 4, characterized in that: Before obtaining a first variation relationship between voltage and current of the ESD device in each state, the method further includes: Acquiring IV characteristic data obtained by testing the ESD device; Obtaining a first variation relationship between voltage and current of the ESD device in various states includes: Based on the IV characteristic data, obtaining IV characteristic data of the ESD device in various states; Based on the IV characteristic data in each of the states, a first variation relationship between voltage and current in the state is obtained.

6. The method according to claim 5, characterized in that Obtaining IV characteristic data obtained by testing the ESD device, including: Obtain IV characteristic data from a TLP test of an ESD device.

7. The method according to any one of claims 1 to 4, characterized in that: Establishing a behavioral model of the ESD device includes: The behavioral model of the ESD device is established using Verilog-A language.

8. A modeling device for an ESD device, characterized in that: The device comprises: an acquisition module, configured to acquire a first variation relationship between voltage and current of the ESD device in various states, and key parameters for determining the state of the ESD device, wherein the first variation relationship is obtained based on IV characteristic data obtained by testing the ESD device; acquire a first conversion relationship between the first variation relationship of the ESD device of a first type and the first variation relationship of the ESD device of a second type; and acquire a second conversion relationship between the key parameters of the ESD device of the first type and the key parameters of the ESD device of the second type; An establishment module, configured to establish a behavioral model of the ESD device, wherein the behavioral model is established based on the first change relationship and the key parameter, the first conversion relationship, and the second conversion relationship of the ESD device of a target type, and the target type is the first type or the second type; Among them, the key parameters include: target current, trigger voltage, trigger current, holding voltage, and holding current. The target current is determined based on the trigger current, and the multiple states include: off state, trigger start state, hysteresis state and on state.

9. An electronic device, characterized in that: The electronic device includes: a memory, a processor, and a computer program stored in the memory and executable on the processor. When the processor executes the computer program, the method according to any one of claims 1 to 7 is implemented.

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